TWI452069B - 用於抗反射性塗層之碳矽烷聚合物組成物 - Google Patents
用於抗反射性塗層之碳矽烷聚合物組成物 Download PDFInfo
- Publication number
- TWI452069B TWI452069B TW097142886A TW97142886A TWI452069B TW I452069 B TWI452069 B TW I452069B TW 097142886 A TW097142886 A TW 097142886A TW 97142886 A TW97142886 A TW 97142886A TW I452069 B TWI452069 B TW I452069B
- Authority
- TW
- Taiwan
- Prior art keywords
- group
- decane
- carbon
- solvent
- polymer
- Prior art date
Links
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/38—Masks having auxiliary features, e.g. special coatings or marks for alignment or testing; Preparation thereof
- G03F1/46—Antireflective coatings
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
- C08G77/00—Macromolecular compounds obtained by reactions forming a linkage containing silicon with or without sulfur, nitrogen, oxygen or carbon in the main chain of the macromolecule
- C08G77/48—Macromolecular compounds obtained by reactions forming a linkage containing silicon with or without sulfur, nitrogen, oxygen or carbon in the main chain of the macromolecule in which at least two but not all the silicon atoms are connected by linkages other than oxygen atoms
- C08G77/50—Macromolecular compounds obtained by reactions forming a linkage containing silicon with or without sulfur, nitrogen, oxygen or carbon in the main chain of the macromolecule in which at least two but not all the silicon atoms are connected by linkages other than oxygen atoms by carbon linkages
- C08G77/52—Macromolecular compounds obtained by reactions forming a linkage containing silicon with or without sulfur, nitrogen, oxygen or carbon in the main chain of the macromolecule in which at least two but not all the silicon atoms are connected by linkages other than oxygen atoms by carbon linkages containing aromatic rings
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09D—COATING COMPOSITIONS, e.g. PAINTS, VARNISHES OR LACQUERS; FILLING PASTES; CHEMICAL PAINT OR INK REMOVERS; INKS; CORRECTING FLUIDS; WOODSTAINS; PASTES OR SOLIDS FOR COLOURING OR PRINTING; USE OF MATERIALS THEREFOR
- C09D183/00—Coating compositions based on macromolecular compounds obtained by reactions forming in the main chain of the macromolecule a linkage containing silicon, with or without sulfur, nitrogen, oxygen, or carbon only; Coating compositions based on derivatives of such polymers
- C09D183/14—Coating compositions based on macromolecular compounds obtained by reactions forming in the main chain of the macromolecule a linkage containing silicon, with or without sulfur, nitrogen, oxygen, or carbon only; Coating compositions based on derivatives of such polymers in which at least two but not all the silicon atoms are connected by linkages other than oxygen atoms
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09D—COATING COMPOSITIONS, e.g. PAINTS, VARNISHES OR LACQUERS; FILLING PASTES; CHEMICAL PAINT OR INK REMOVERS; INKS; CORRECTING FLUIDS; WOODSTAINS; PASTES OR SOLIDS FOR COLOURING OR PRINTING; USE OF MATERIALS THEREFOR
- C09D5/00—Coating compositions, e.g. paints, varnishes or lacquers, characterised by their physical nature or the effects produced; Filling pastes
- C09D5/006—Anti-reflective coatings
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/075—Silicon-containing compounds
- G03F7/0752—Silicon-containing compounds in non photosensitive layers or as additives, e.g. for dry lithography
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
- G03F7/091—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers characterised by antireflection means or light filtering or absorbing means, e.g. anti-halation, contrast enhancement
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
- H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
- H10P14/68—Organic materials, e.g. photoresists
- H10P14/683—Organic materials, e.g. photoresists carbon-based polymeric organic materials, e.g. polyimides, poly cyclobutene or PVC
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- General Physics & Mathematics (AREA)
- Physics & Mathematics (AREA)
- Organic Chemistry (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Materials Engineering (AREA)
- Life Sciences & Earth Sciences (AREA)
- Wood Science & Technology (AREA)
- Health & Medical Sciences (AREA)
- Architecture (AREA)
- Structural Engineering (AREA)
- Polymers & Plastics (AREA)
- Medicinal Chemistry (AREA)
- Silicon Polymers (AREA)
- Paints Or Removers (AREA)
- Formation Of Insulating Films (AREA)
- Application Of Or Painting With Fluid Materials (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US98584507P | 2007-11-06 | 2007-11-06 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| TW200940608A TW200940608A (en) | 2009-10-01 |
| TWI452069B true TWI452069B (zh) | 2014-09-11 |
Family
ID=40474837
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW097142886A TWI452069B (zh) | 2007-11-06 | 2008-11-06 | 用於抗反射性塗層之碳矽烷聚合物組成物 |
Country Status (5)
| Country | Link |
|---|---|
| US (2) | US8765899B2 (https=) |
| EP (1) | EP2209839A1 (https=) |
| JP (2) | JP2011504522A (https=) |
| TW (1) | TWI452069B (https=) |
| WO (1) | WO2009060125A1 (https=) |
Families Citing this family (21)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20050156353A1 (en) * | 2004-01-15 | 2005-07-21 | Watts Michael P. | Method to improve the flow rate of imprinting material |
| US9051491B2 (en) | 2006-06-13 | 2015-06-09 | Braggone Oy | Carbosilane polymer compositions for anti-reflective coatings |
| US8431670B2 (en) * | 2009-08-31 | 2013-04-30 | International Business Machines Corporation | Photo-patternable dielectric materials and formulations and methods of use |
| US8864898B2 (en) * | 2011-05-31 | 2014-10-21 | Honeywell International Inc. | Coating formulations for optical elements |
| KR101432607B1 (ko) | 2011-08-11 | 2014-08-21 | 제일모직주식회사 | 레지스트 하층막용 조성물 및 이를 이용한 반도체 집적회로 디바이스의 제조방법 |
| US9348228B2 (en) | 2013-01-03 | 2016-05-24 | Globalfoundries Inc. | Acid-strippable silicon-containing antireflective coating |
| US10170297B2 (en) * | 2013-08-22 | 2019-01-01 | Versum Materials Us, Llc | Compositions and methods using same for flowable oxide deposition |
| KR101780977B1 (ko) | 2014-06-24 | 2017-10-23 | (주)디엔에프 | 실리콘 전구체, 이의 제조방법 및 이를 이용한 실리콘함유 유전막의 제조방법 |
| US9969756B2 (en) * | 2014-09-23 | 2018-05-15 | L'Air Liquide, Société Anonyme pour l'Etude et l'Exploitation des Procédés George Claude | Carbosilane substituted amine precursors for deposition of Si-containing films and methods thereof |
| EP3062142B1 (en) | 2015-02-26 | 2018-10-03 | Nokia Technologies OY | Apparatus for a near-eye display |
| TWI716333B (zh) | 2015-03-30 | 2021-01-11 | 法商液態空氣喬治斯克勞帝方法研究開發股份有限公司 | 碳矽烷與氨、胺類及脒類之觸媒去氫耦合 |
| JP6803842B2 (ja) | 2015-04-13 | 2020-12-23 | ハネウェル・インターナショナル・インコーポレーテッドHoneywell International Inc. | オプトエレクトロニクス用途のためのポリシロキサン製剤及びコーティング |
| TWI724141B (zh) | 2016-03-23 | 2021-04-11 | 法商液態空氣喬治斯克勞帝方法硏究開發股份有限公司 | 形成含矽膜之組成物及其製法與用途 |
| US10186424B2 (en) * | 2017-06-14 | 2019-01-22 | Rohm And Haas Electronic Materials Llc | Silicon-based hardmask |
| KR102198801B1 (ko) * | 2017-12-07 | 2021-01-05 | 삼성에스디아이 주식회사 | 색 변환 패널 및 색 변환 패널의 제조 방법 |
| JP7282090B2 (ja) * | 2017-12-10 | 2023-05-26 | マジック リープ, インコーポレイテッド | 光学導波管上の反射防止性コーティング |
| CN111712751B (zh) | 2017-12-20 | 2022-11-01 | 奇跃公司 | 用于增强现实观看设备的插入件 |
| US10604618B2 (en) | 2018-06-20 | 2020-03-31 | Shin-Etsu Chemical Co., Ltd. | Compound, method for manufacturing the compound, and composition for forming organic film |
| SG11202103231VA (en) * | 2018-10-03 | 2021-04-29 | Versum Materials Us Llc | Methods for making silicon and nitrogen containing films |
| JP7543274B2 (ja) | 2018-12-21 | 2024-09-02 | マジック リープ, インコーポレイテッド | 導波管内の全内部反射を助長するための空気ポケット構造 |
| EP4058979A4 (en) | 2019-11-15 | 2023-01-11 | Magic Leap, Inc. | VISUALIZATION SYSTEM FOR USE IN A SURGICAL ENVIRONMENT |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2006134205A1 (en) * | 2005-06-13 | 2006-12-21 | Silecs Oy | Method for producing a polymer for semiconductor optoelectronics comprising polymerizing functionalized silane monomers with bridging hydrocarbon group |
Family Cites Families (19)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| FR2603590B1 (fr) * | 1986-02-25 | 1991-05-24 | Kansai Paint Co Ltd | Procede de preparation d'une resine contenant un polysiloxane |
| JP2718620B2 (ja) * | 1993-09-01 | 1998-02-25 | 東芝シリコーン株式会社 | ポリオルガノシランの製造方法 |
| EP0669363B1 (en) * | 1994-02-28 | 1999-08-18 | Toshiba Silicone Co., Ltd. | Process for preparing polyorganosilane |
| US5607824A (en) * | 1994-07-27 | 1997-03-04 | International Business Machines Corporation | Antireflective coating for microlithography |
| JP4096138B2 (ja) | 1999-04-12 | 2008-06-04 | Jsr株式会社 | レジスト下層膜用組成物の製造方法 |
| DE60021476T2 (de) * | 1999-06-04 | 2006-05-24 | Jsr Corp. | Beschichtungszusammensetzung für die Filmherstellung und Material für isolierenden Schichten |
| US6841256B2 (en) * | 1999-06-07 | 2005-01-11 | Honeywell International Inc. | Low dielectric constant polyorganosilicon materials generated from polycarbosilanes |
| JP3951124B2 (ja) * | 2002-12-06 | 2007-08-01 | Jsr株式会社 | 絶縁膜 |
| JP4818582B2 (ja) * | 2002-12-24 | 2011-11-16 | 信越化学工業株式会社 | 高分子化合物、反射防止膜材料及びパターン形成方法 |
| US7172849B2 (en) * | 2003-08-22 | 2007-02-06 | International Business Machines Corporation | Antireflective hardmask and uses thereof |
| US8053159B2 (en) * | 2003-11-18 | 2011-11-08 | Honeywell International Inc. | Antireflective coatings for via fill and photolithography applications and methods of preparation thereof |
| US20050214674A1 (en) * | 2004-03-25 | 2005-09-29 | Yu Sui | Positive-working photoimageable bottom antireflective coating |
| JP4491283B2 (ja) * | 2004-06-10 | 2010-06-30 | 信越化学工業株式会社 | 反射防止膜形成用組成物を用いたパターン形成方法 |
| JP4355939B2 (ja) * | 2004-07-23 | 2009-11-04 | Jsr株式会社 | 半導体装置の絶縁膜形成用組成物およびシリカ系膜の形成方法 |
| WO2006024693A1 (en) * | 2004-08-31 | 2006-03-09 | Silecs Oy | Novel polyorganosiloxane dielectric materials |
| JP4756128B2 (ja) * | 2004-10-20 | 2011-08-24 | 日揮触媒化成株式会社 | 半導体加工用保護膜形成用塗布液、その調製方法およびこれより得られる半導体加工用保護膜 |
| EP1691238A3 (en) * | 2005-02-05 | 2009-01-21 | Rohm and Haas Electronic Materials, L.L.C. | Coating compositions for use with an overcoated photoresist |
| US9051491B2 (en) * | 2006-06-13 | 2015-06-09 | Braggone Oy | Carbosilane polymer compositions for anti-reflective coatings |
| KR101523393B1 (ko) * | 2007-02-27 | 2015-05-27 | 이엠디 퍼포먼스 머티리얼스 코프. | 규소를 주성분으로 하는 반사 방지 코팅 조성물 |
-
2008
- 2008-11-06 EP EP08848270A patent/EP2209839A1/en not_active Withdrawn
- 2008-11-06 US US12/741,708 patent/US8765899B2/en not_active Expired - Fee Related
- 2008-11-06 JP JP2010532631A patent/JP2011504522A/ja active Pending
- 2008-11-06 TW TW097142886A patent/TWI452069B/zh not_active IP Right Cessation
- 2008-11-06 WO PCT/FI2008/050637 patent/WO2009060125A1/en not_active Ceased
-
2014
- 2014-03-03 JP JP2014040694A patent/JP5902216B2/ja not_active Expired - Fee Related
- 2014-05-05 US US14/269,697 patent/US9158195B2/en active Active
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2006134205A1 (en) * | 2005-06-13 | 2006-12-21 | Silecs Oy | Method for producing a polymer for semiconductor optoelectronics comprising polymerizing functionalized silane monomers with bridging hydrocarbon group |
Also Published As
| Publication number | Publication date |
|---|---|
| JP5902216B2 (ja) | 2016-04-13 |
| JP2014139319A (ja) | 2014-07-31 |
| US9158195B2 (en) | 2015-10-13 |
| TW200940608A (en) | 2009-10-01 |
| US8765899B2 (en) | 2014-07-01 |
| JP2011504522A (ja) | 2011-02-10 |
| US20100252917A1 (en) | 2010-10-07 |
| US20140239516A1 (en) | 2014-08-28 |
| EP2209839A1 (en) | 2010-07-28 |
| WO2009060125A1 (en) | 2009-05-14 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| MM4A | Annulment or lapse of patent due to non-payment of fees |