TWI452069B - 用於抗反射性塗層之碳矽烷聚合物組成物 - Google Patents

用於抗反射性塗層之碳矽烷聚合物組成物 Download PDF

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Publication number
TWI452069B
TWI452069B TW097142886A TW97142886A TWI452069B TW I452069 B TWI452069 B TW I452069B TW 097142886 A TW097142886 A TW 097142886A TW 97142886 A TW97142886 A TW 97142886A TW I452069 B TWI452069 B TW I452069B
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TW
Taiwan
Prior art keywords
group
decane
carbon
solvent
polymer
Prior art date
Application number
TW097142886A
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English (en)
Chinese (zh)
Other versions
TW200940608A (en
Inventor
亞里 卡坎南
Original Assignee
布勒岡股份有限公司
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Publication of TW200940608A publication Critical patent/TW200940608A/zh
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Publication of TWI452069B publication Critical patent/TWI452069B/zh

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Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/38—Masks having auxiliary features, e.g. special coatings or marks for alignment or testing; Preparation thereof
    • G03F1/46—Antireflective coatings
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G77/00—Macromolecular compounds obtained by reactions forming a linkage containing silicon with or without sulfur, nitrogen, oxygen or carbon in the main chain of the macromolecule
    • C08G77/48—Macromolecular compounds obtained by reactions forming a linkage containing silicon with or without sulfur, nitrogen, oxygen or carbon in the main chain of the macromolecule in which at least two but not all the silicon atoms are connected by linkages other than oxygen atoms
    • C08G77/50—Macromolecular compounds obtained by reactions forming a linkage containing silicon with or without sulfur, nitrogen, oxygen or carbon in the main chain of the macromolecule in which at least two but not all the silicon atoms are connected by linkages other than oxygen atoms by carbon linkages
    • C08G77/52—Macromolecular compounds obtained by reactions forming a linkage containing silicon with or without sulfur, nitrogen, oxygen or carbon in the main chain of the macromolecule in which at least two but not all the silicon atoms are connected by linkages other than oxygen atoms by carbon linkages containing aromatic rings
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09D—COATING COMPOSITIONS, e.g. PAINTS, VARNISHES OR LACQUERS; FILLING PASTES; CHEMICAL PAINT OR INK REMOVERS; INKS; CORRECTING FLUIDS; WOODSTAINS; PASTES OR SOLIDS FOR COLOURING OR PRINTING; USE OF MATERIALS THEREFOR
    • C09D183/00—Coating compositions based on macromolecular compounds obtained by reactions forming in the main chain of the macromolecule a linkage containing silicon, with or without sulfur, nitrogen, oxygen, or carbon only; Coating compositions based on derivatives of such polymers
    • C09D183/14—Coating compositions based on macromolecular compounds obtained by reactions forming in the main chain of the macromolecule a linkage containing silicon, with or without sulfur, nitrogen, oxygen, or carbon only; Coating compositions based on derivatives of such polymers in which at least two but not all the silicon atoms are connected by linkages other than oxygen atoms
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09D—COATING COMPOSITIONS, e.g. PAINTS, VARNISHES OR LACQUERS; FILLING PASTES; CHEMICAL PAINT OR INK REMOVERS; INKS; CORRECTING FLUIDS; WOODSTAINS; PASTES OR SOLIDS FOR COLOURING OR PRINTING; USE OF MATERIALS THEREFOR
    • C09D5/00—Coating compositions, e.g. paints, varnishes or lacquers, characterised by their physical nature or the effects produced; Filling pastes
    • C09D5/006—Anti-reflective coatings
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/075—Silicon-containing compounds
    • G03F7/0752—Silicon-containing compounds in non photosensitive layers or as additives, e.g. for dry lithography
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
    • G03F7/091—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers characterised by antireflection means or light filtering or absorbing means, e.g. anti-halation, contrast enhancement
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/68—Organic materials, e.g. photoresists
    • H10P14/683—Organic materials, e.g. photoresists carbon-based polymeric organic materials, e.g. polyimides, poly cyclobutene or PVC

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Wood Science & Technology (AREA)
  • Materials Engineering (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Polymers & Plastics (AREA)
  • Health & Medical Sciences (AREA)
  • Medicinal Chemistry (AREA)
  • Architecture (AREA)
  • Structural Engineering (AREA)
  • Silicon Polymers (AREA)
  • Paints Or Removers (AREA)
  • Formation Of Insulating Films (AREA)
  • Application Of Or Painting With Fluid Materials (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
TW097142886A 2007-11-06 2008-11-06 用於抗反射性塗層之碳矽烷聚合物組成物 TWI452069B (zh)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US98584507P 2007-11-06 2007-11-06

Publications (2)

Publication Number Publication Date
TW200940608A TW200940608A (en) 2009-10-01
TWI452069B true TWI452069B (zh) 2014-09-11

Family

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Family Applications (1)

Application Number Title Priority Date Filing Date
TW097142886A TWI452069B (zh) 2007-11-06 2008-11-06 用於抗反射性塗層之碳矽烷聚合物組成物

Country Status (5)

Country Link
US (2) US8765899B2 (https=)
EP (1) EP2209839A1 (https=)
JP (2) JP2011504522A (https=)
TW (1) TWI452069B (https=)
WO (1) WO2009060125A1 (https=)

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US8431670B2 (en) * 2009-08-31 2013-04-30 International Business Machines Corporation Photo-patternable dielectric materials and formulations and methods of use
US8864898B2 (en) * 2011-05-31 2014-10-21 Honeywell International Inc. Coating formulations for optical elements
KR101432607B1 (ko) 2011-08-11 2014-08-21 제일모직주식회사 레지스트 하층막용 조성물 및 이를 이용한 반도체 집적회로 디바이스의 제조방법
US9348228B2 (en) 2013-01-03 2016-05-24 Globalfoundries Inc. Acid-strippable silicon-containing antireflective coating
US10170297B2 (en) * 2013-08-22 2019-01-01 Versum Materials Us, Llc Compositions and methods using same for flowable oxide deposition
KR101780977B1 (ko) 2014-06-24 2017-10-23 (주)디엔에프 실리콘 전구체, 이의 제조방법 및 이를 이용한 실리콘함유 유전막의 제조방법
US9969756B2 (en) * 2014-09-23 2018-05-15 L'Air Liquide, Société Anonyme pour l'Etude et l'Exploitation des Procédés George Claude Carbosilane substituted amine precursors for deposition of Si-containing films and methods thereof
EP3062142B1 (en) 2015-02-26 2018-10-03 Nokia Technologies OY Apparatus for a near-eye display
TWI716333B (zh) 2015-03-30 2021-01-11 法商液態空氣喬治斯克勞帝方法研究開發股份有限公司 碳矽烷與氨、胺類及脒類之觸媒去氫耦合
JP6803842B2 (ja) 2015-04-13 2020-12-23 ハネウェル・インターナショナル・インコーポレーテッドＨｏｎｅｙｗｅｌｌ Ｉｎｔｅｒｎａｔｉｏｎａｌ Ｉｎｃ． オプトエレクトロニクス用途のためのポリシロキサン製剤及びコーティング
TWI724141B (zh) 2016-03-23 2021-04-11 法商液態空氣喬治斯克勞帝方法硏究開發股份有限公司 形成含矽膜之組成物及其製法與用途
US10186424B2 (en) * 2017-06-14 2019-01-22 Rohm And Haas Electronic Materials Llc Silicon-based hardmask
KR102198801B1 (ko) * 2017-12-07 2021-01-05 삼성에스디아이 주식회사 색 변환 패널 및 색 변환 패널의 제조 방법
KR20250138816A (ko) * 2017-12-10 2025-09-22 매직 립, 인코포레이티드 광학 도파관들 상의 반사―방지 코팅들
CA3086206A1 (en) 2017-12-20 2019-06-27 Magic Leap, Inc. Insert for augmented reality viewing device
US10604618B2 (en) * 2018-06-20 2020-03-31 Shin-Etsu Chemical Co., Ltd. Compound, method for manufacturing the compound, and composition for forming organic film
EP3844318B1 (en) * 2018-10-03 2025-12-10 Versum Materials US, LLC Methods for making silicon and nitrogen containing films
WO2020132484A1 (en) 2018-12-21 2020-06-25 Magic Leap, Inc. Air pocket structures for promoting total internal reflection in a waveguide
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Also Published As

Publication number Publication date
US9158195B2 (en) 2015-10-13
TW200940608A (en) 2009-10-01
EP2209839A1 (en) 2010-07-28
JP2011504522A (ja) 2011-02-10
US20100252917A1 (en) 2010-10-07
JP5902216B2 (ja) 2016-04-13
JP2014139319A (ja) 2014-07-31
WO2009060125A1 (en) 2009-05-14
US20140239516A1 (en) 2014-08-28
US8765899B2 (en) 2014-07-01

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