TWI446480B - Substrate cooling apparatus - Google Patents

Substrate cooling apparatus Download PDF

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TWI446480B
TWI446480B TW100103178A TW100103178A TWI446480B TW I446480 B TWI446480 B TW I446480B TW 100103178 A TW100103178 A TW 100103178A TW 100103178 A TW100103178 A TW 100103178A TW I446480 B TWI446480 B TW I446480B
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substrate
flow path
gas flow
gas
wind tunnel
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TW100103178A
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TW201212145A (en
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Shingo Nakane
Takayuki Sato
Mitsuaki Yoshitani
Fumito Fukuhara
Hideto Yamaoka
Yuji Abe
Toshiharu Ishikawa
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Dainippon Screen Mfg
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    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005Apparatus not specifically provided for elsewhere
    • H01L21/67011Apparatus for manufacture or treatment

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  • Condensed Matter Physics & Semiconductors (AREA)
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  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)

Description

基板冷卻裝置Substrate cooling device

本發明係關於對加熱後之液晶顯示裝置用玻璃基板、PDP(plasma display panel,電漿顯示器)用玻璃基板、半導體晶圓、記錄碟片用基板及太陽電池用基板等薄板狀之精密電子基板(以下簡單地稱作「基板」)進行冷卻處理之基板冷卻裝置。The present invention relates to a thin-plate-shaped precision electronic substrate such as a glass substrate for a liquid crystal display device after heating, a glass substrate for a PDP (plasma display panel), a semiconductor wafer, a substrate for a recording disk, and a substrate for a solar cell. (hereinafter simply referred to as "substrate") A substrate cooling device that performs cooling treatment.

對上述基板進行之處理步驟中,例如於對塗佈有光阻等處理液之基板加熱並進行成膜之後,適當地進行冷卻該基板之處理。先前,作為對加熱後之基板進行冷卻之方式,通常採用將基板載置於經水冷之金屬之冷卻板上之方法。又,近年來為提高生產量,亦進行以經冷媒冷卻之搬送輥一面搬送加熱後之基板一面冷卻。至於該基板冷卻裝置,揭示於例如專利文獻1中。In the processing step of the substrate, for example, after the substrate coated with the processing liquid such as a photoresist is heated and formed into a film, the substrate is appropriately cooled. Previously, as a method of cooling the heated substrate, a method of placing the substrate on a cooling plate of water-cooled metal was generally employed. Moreover, in recent years, in order to increase the throughput, the substrate which has been heated by the transfer roller cooled by the refrigerant is cooled while being heated. The substrate cooling device is disclosed, for example, in Patent Document 1.

[專利文獻1]日本專利特開2009-94281號公報[Patent Document 1] Japanese Patent Laid-Open Publication No. 2009-94281

然而,將加熱後之基板載置於冷卻板上進行冷卻之方式中,不僅難以提高生產量(為提高生產量而必需呈多段狀地配置冷卻板),亦存在於基板大型化時變得無法應對之問題。又,藉由經冷卻之搬送輥一面搬送基板一面進行冷卻之方式中,由於搬送輥與基板反覆進行直接接觸‧剝離,因此剝離帶電所引起之靜電之產生成為問題。However, in the method in which the heated substrate is placed on a cooling plate and cooled, it is difficult to increase the throughput (the cooling plate must be arranged in a plurality of stages in order to increase the throughput), and it is also impossible to increase the size of the substrate. Respond to the problem. Further, in the method in which the substrate is conveyed while being cooled by the cooling transfer roller, the transfer roller and the substrate are directly brought into contact with each other and peeled off. Therefore, generation of static electricity due to peeling electrification becomes a problem.

作為解決該些問題之冷卻方式,考慮一面搬送加熱後之基板一面對該基板噴吹空氣流進行冷卻之方法。於作為噴吹空氣流之單元而使用具有HEPA(high efficiency particulate air,高效率微粒空氣)過濾器之風扇過濾單元,且對搬送之基板供給降流之情形時,因空氣流較弱,沿著基板表面之空氣流之流速幾乎接近零,由此無法有效率地奪去基板之熱量而進行冷卻。又,對搬送之基板自狹縫狀之噴嘴呈簾狀地噴吹壓縮空氣之方式中,僅可於空氣流接觸於基板之瞬間奪去基板之熱量,其後空氣流會向周圍擴散,因此難以有效果地進行均勻之冷卻。As a cooling method for solving such problems, a method of cooling the substrate blowing air flow while conveying the heated substrate is considered. When a fan filter unit having a HEPA (high efficiency particulate air) filter is used as a unit for blowing air flow, and the substrate is supplied with a downflow, the air flow is weak, along The flow rate of the air flow on the surface of the substrate is almost zero, so that the heat of the substrate cannot be efficiently removed and cooled. Further, in the method in which the substrate to be transported is compressed in a curtain shape from the slit-shaped nozzle, the heat of the substrate can be removed only when the air flow contacts the substrate, and thereafter the air flow spreads to the periphery. It is difficult to effect uniform cooling.

本發明係鑒於上述問題而完成者,其目的在於提供一種可一面搬送基板,一面效率佳地均勻冷卻基板面內之基板冷卻裝置。The present invention has been made in view of the above problems, and an object thereof is to provide a substrate cooling device capable of uniformly cooling a substrate surface while efficiently transporting a substrate.

為解決上述問題,請求項1之發明係一種基板冷卻裝置,其特徵在於:其係對加熱後之基板進行冷卻處理者,且包括:搬送機構,其於特定之方向搬送基板;風洞部,其於藉由上述搬送機構之基板之搬送路徑之周圍形成兩端部開放之氣體流路;及氣流形成機構,其於上述氣體流路中沿著基板之搬送方向形成氣流。In order to solve the above problems, the invention of claim 1 is a substrate cooling device characterized in that it cools a substrate after heating, and includes: a transfer mechanism that transports the substrate in a specific direction; and a wind tunnel portion A gas flow path in which both end portions are open is formed around the transfer path of the substrate of the transfer mechanism, and an air flow forming mechanism that forms an air flow in the gas flow path along the transfer direction of the substrate.

又,請求項2之發明係如請求項1之發明之基板冷卻裝置,其中,於上述風洞部形成有與上述氣體流路連通之排氣口,上述氣流形成機構具有將上述氣體流路內之環境氣體自上述排氣口排出之排氣機構。The substrate cooling device according to the invention of claim 1, wherein the wind tunnel portion is formed with an exhaust port that communicates with the gas flow path, and the air flow forming mechanism has a gas flow path. An exhaust mechanism from which the ambient gas is discharged from the exhaust port.

又,請求項3之發明係如請求項2之發明之基板冷卻裝置,其中,上述排氣口形成於上述風洞部之上述搬送方向之中央部。The substrate cooling device according to the invention of claim 2, wherein the exhaust port is formed in a central portion of the wind tunnel portion in the transport direction.

又,請求項4之發明係如請求項1至3中任一項之發明之基板冷卻裝置,其中,上述氣流形成機構包括向上述氣體流路之兩端部之至少一方吹入氣體之氣體噴出機構。The substrate cooling device according to any one of claims 1 to 3, wherein the airflow forming means includes a gas ejecting gas which is blown into at least one of both end portions of the gas flow path. mechanism.

又,請求項5之發明係如請求項4之發明之基板冷卻裝置,其中,上述氣體噴出機構包括產生離子並使之與氣體一同吹入上述氣體流路之兩端部之至少一方之離子化器。The substrate cooling device according to the invention of claim 4, wherein the gas ejecting mechanism includes ionization that generates ions and blows them into at least one of both end portions of the gas flow path together with the gas. Device.

又,請求項6之發明係如請求項1至5中任一項之發明之基板冷卻裝置,其中,將向上述氣體流路之兩端部之至少一方導引氣體之通風筒附設於上述風洞部。The substrate cooling device according to any one of claims 1 to 5, wherein a ventilating cylinder for guiding a gas to at least one of both end portions of the gas flow path is attached to the wind tunnel unit.

又,請求項7之發明係如請求項6之發明之基板冷卻裝置,其中,上述通風筒設置於上述搬送路徑之上下方,於上述設置於上下方之通風筒中設置有雙方之間隔最窄之縮徑部,下側通風筒之縮徑部與上述搬送通路之間隔,小於上側通風筒之縮徑部與上述搬送通路之間隔。The substrate cooling device according to the invention of claim 6, wherein the ventilating cylinder is disposed above and below the transport path, and the ventilator provided above and below is provided with the narrowest interval between the two. The reduced diameter portion is spaced apart from the transfer passage by the reduced diameter portion of the lower ventilating cylinder and smaller than the distance between the reduced diameter portion of the upper ventilating cylinder and the transfer passage.

又,請求項8之發明係如請求項1至7中任一項之發明之基板冷卻裝置,其中,於上述風洞部之內壁面上與上述搬送方向平行地延伸設置有整流扇。The substrate cooling device according to any one of claims 1 to 7, wherein the rectifying fan extends in parallel with the conveying direction on an inner wall surface of the wind tunnel portion.

又,請求項9之發明係如請求項1至8中任一項之發明之基板冷卻裝置,其中,上述搬送機構係藉由一部分自設置於上述風洞部之底面之開口部突出之輥而搬送基板,於上述風洞部之上述底面之外壁進而設置有覆蓋上述輥之較上述底面更靠下方之全體之圍罩。The substrate cooling device according to any one of claims 1 to 8, wherein the conveying mechanism is conveyed by a part of a roller protruding from an opening provided in a bottom surface of the wind tunnel portion. The substrate is further provided with a shroud covering the entire lower surface of the roller than the bottom surface on the outer wall of the bottom surface of the wind tunnel portion.

又,請求項10之發明係一種基板冷卻裝置,其特徵在於:其係對加熱後之基板進行冷卻處理者,且包括:搬送機構,其於特定之方向搬送基板;蓋體,其藉由覆蓋上述搬送機構所搬送之基板之表面,而於與該基板之表面之間形成兩端部開放之氣體流路;及氣流形成機構,其於上述氣體流路中沿著基板之搬送方向而形成氣流。Further, the invention of claim 10 is a substrate cooling device characterized in that it cools a substrate after heating, and includes: a transfer mechanism that transports the substrate in a specific direction; and a cover that is covered by the cover a surface of the substrate conveyed by the transport mechanism, and a gas flow path opened at both ends between the substrate and the surface of the substrate; and an air flow forming mechanism that forms an air flow along the transport direction of the substrate in the gas flow path .

又,請求項11之發明係如請求項10之發明之基板冷卻裝置,其中,於上述蓋體形成有與上述氣體流路連通之排氣口,上述氣流形成機構包括將上述氣體流路內之環境氣體自上述排氣口排出之排氣機構。The substrate cooling device of the invention of claim 10, wherein the cover body is formed with an exhaust port that communicates with the gas flow path, and the air flow forming mechanism includes the gas flow path. An exhaust mechanism from which the ambient gas is discharged from the exhaust port.

又,請求項12之發明係如請求項10或11之發明之基板冷卻裝置,其中,上述氣流形成機構包括向上述氣體流路之兩端部之至少一方吹入氣體之氣體噴出機構。The substrate cooling device according to the invention of claim 10 or 11, wherein the air flow forming means includes a gas discharge mechanism that blows a gas into at least one of both end portions of the gas flow path.

又,請求項13之發明係如請求項12之發明之基板冷卻裝置,其中,上述氣體噴出機構包括產生離子並使之與氣體一同吹入上述氣體流路之兩端部之至少一方之離子化器。The substrate cooling device according to the invention of claim 12, wherein the gas ejecting mechanism includes ionization that generates ions and blows them into at least one of both end portions of the gas flow path together with the gas. Device.

又,請求項14之發明係如請求項10至13中任一項之發明之基板冷卻裝置,其中,將向上述氣體流路之兩端部之至少一方導引氣體之通風筒附設於上述蓋體上。The substrate cooling device according to any one of claims 10 to 13, wherein the ventilator that guides gas to at least one of both end portions of the gas flow path is attached to the cover. Physically.

又,請求項15之發明係如請求項10至14中任一項之發明之基板冷卻裝置,其中,於上述蓋體之內壁面上與上述搬送方向平行地延伸設置有整流扇。The substrate cooling device according to any one of claims 10 to 14, wherein a rectifying fan extends in parallel with the conveying direction on an inner wall surface of the lid body.

根據請求項1至9之發明,於形成於基板之搬送通路周圍且兩端部開放之氣體流路中沿著基板之搬送方向而形成氣流,因此可使氣流不沿著加熱後搬送之基板之表面平行擴散地流動,從而可一面搬送基板一面效率佳地均勻冷卻基板面內。According to the inventions of claims 1 to 9, the gas flow is formed along the transport direction of the substrate in the gas flow path formed around the transfer path of the substrate and opened at both ends, so that the air flow can be prevented from being carried along the substrate after heating. The surface flows in parallel and spreads, so that the substrate surface can be uniformly cooled while being efficiently conveyed.

尤其,根據請求項5之發明,產生離子並使之與氣體一同吹入氣體流路,由此可將基板表面上所產生之靜電中和並除去。In particular, according to the invention of claim 5, ions are generated and blown into the gas flow path together with the gas, whereby the static electricity generated on the surface of the substrate can be neutralized and removed.

尤其,根據請求項6之發明,將向氣體流路之兩端部之至少一方導引氣體之通風筒附設於風洞部,因此可藉由柯安達效應及伯努利効應而將更多量之氣體效率佳地送入氣體流路,因此可提高氣體流路內所形成之氣流之流速而進一步提高基板之冷卻效率。In particular, according to the invention of claim 6, the ventilating cylinder for guiding the gas to at least one of the both end portions of the gas flow path is attached to the wind tunnel portion, so that a larger amount can be obtained by the Coanda effect and the Bernoulli effect. Since the gas is efficiently supplied to the gas flow path, the flow rate of the gas flow formed in the gas flow path can be increased to further improve the cooling efficiency of the substrate.

尤其,根據請求項7之發明,下側通風筒之縮徑部與搬送通路之間隔,小於上側通風筒之縮徑部與搬送通路之間隔,因此與基板之上側相比會於下側產生更強之伯努利効應而使基板下側之氣壓變得低於上側之氣壓,其結果,可防止基板自搬送通路浮起。In particular, according to the invention of claim 7, the interval between the reduced diameter portion of the lower ventilating cylinder and the transport path is smaller than the interval between the reduced diameter portion of the upper ventilating cylinder and the transport path, so that it is generated on the lower side of the upper side of the substrate. The strong Bernoulli effect causes the gas pressure on the lower side of the substrate to be lower than the upper side air pressure, and as a result, the substrate can be prevented from floating from the transfer path.

尤其,根據請求項8之發明,於風洞部之內壁面上與搬送方向平行地延伸設置有整流扇,因此於氣體流路中氣流被整流為直線性地流動,可對基板之表面均勻地供給氣流,從而可更均勻地冷卻基板。In particular, according to the invention of claim 8, the rectifying fan is extended in parallel with the conveying direction on the inner wall surface of the wind tunnel portion, so that the air flow is rectified to linearly flow in the gas flow path, and the surface of the substrate can be uniformly supplied. Air flow so that the substrate can be cooled more evenly.

尤其,根據請求項9之發明,搬送機構係藉由一部分自設置於風洞部之底面之開口部突出之輥而搬送基板,且於風洞部之底面之外壁設置有覆蓋輥之較底面更靠下方之全體之圍罩,因此於氣體流路中流動之氣流自開口部與輥之間之間隙流出至外部的情況被抑制於最小限度,可防止氣體流路中所形成之氣流之紊亂,從而可更均勻地冷卻基板。In particular, according to the invention of claim 9, the transport mechanism transports the substrate by a portion of the roller protruding from the opening of the bottom surface of the wind tunnel portion, and the outer wall of the wind tunnel portion is provided with a lower surface of the cover roller. In the entire shroud, the flow of the air flowing through the gas flow path from the gap between the opening and the roller to the outside is suppressed to a minimum, and the disorder of the air flow formed in the gas flow path can be prevented. The substrate is cooled more uniformly.

又,根據請求項10至15之發明,於形成於覆蓋搬送基板之表面之蓋體與基板表面之間且兩端部開放之氣體流路中沿著基板之搬送方向形成氣流,因此可使氣流不沿著加熱後搬送之基板之表面平行擴散地流動,從而可一面搬送基板一面效率佳地均勻冷卻基板面內。According to the inventions of claims 10 to 15, the gas flow is formed in the gas flow path formed between the lid body covering the surface of the transfer substrate and the surface of the substrate and the both end portions are open, and the gas flow is formed along the substrate transport direction. The surface of the substrate that has not been transported after being heated flows in parallel, so that the substrate can be uniformly cooled while being efficiently conveyed while the substrate is being conveyed.

尤其,根據請求項13之發明,產生離子並使之與氣體一同吹入氣體流路,因此可將基板表面上所產生之靜電中和並除去。In particular, according to the invention of claim 13, ions are generated and blown into the gas flow path together with the gas, so that the static electricity generated on the surface of the substrate can be neutralized and removed.

尤其,根據請求項14之發明,將向氣體流路之兩端部之至少一方導引氣體之通風筒附設於蓋體上,因此可藉由柯安達效應及伯努利効應而將更多量之氣體效率佳地送入氣體流路,從而可提高氣體流路內所形成之氣流之流速而進一步提高基板之冷卻效率。In particular, according to the invention of claim 14, the ventilating cylinder for guiding the gas to at least one of the both end portions of the gas flow path is attached to the lid body, so that the amount can be increased by the Coanda effect and the Bernoulli effect. The gas is efficiently fed into the gas flow path, so that the flow rate of the gas flow formed in the gas flow path can be increased to further improve the cooling efficiency of the substrate.

尤其,根據請求項15之發明,於蓋體之內壁面上與搬送方向平行地延伸設置有整流扇,因此於氣體流路中氣流被整流為直線性地流動,可對基板之表面均勻地供給氣流,從而可更均勻地冷卻基板。In particular, according to the invention of claim 15, the rectifying fan is extended in parallel with the conveying direction on the inner wall surface of the lid body, so that the air flow in the gas flow path is rectified to linearly flow, and the surface of the substrate can be uniformly supplied. Air flow so that the substrate can be cooled more evenly.

以下,參照圖式對本發明之實施形態進行詳細說明。Hereinafter, embodiments of the present invention will be described in detail with reference to the drawings.

<第1實施形態><First embodiment>

圖1係表示本發明之第1實施形態之基板冷卻裝置1之要部構成之側視圖。圖1及以下之各圖中,為明確該些部分之方向關係而適當附上設Z軸方向為鉛直方向且設XY平面為水平面之XYZ正交座標系。又,圖1及以下之各圖中,為容易理解,根據需要而將各部分之尺寸擴大描述。Fig. 1 is a side view showing the configuration of a main part of a substrate cooling device 1 according to a first embodiment of the present invention. In each of FIG. 1 and the following drawings, in order to clarify the directional relationship of the portions, an XYZ orthogonal coordinate system in which the Z-axis direction is the vertical direction and the XY plane is the horizontal plane is appropriately attached. In addition, in each of FIG. 1 and the following drawings, in order to make it easy to understand, the dimension of each part is expanded as needed.

本發明之基板冷卻裝置1係用以一面搬送已進行加熱處理後之基板W(本實施形態中為矩形之液晶顯示裝置用玻璃基板)一面進行冷卻處理之裝置。首先,對基板冷卻裝置1之全體概略構成進行說明。基板冷卻裝置1之主要構成包括輥搬送機構10、風洞部20及氣流形成機構60。The substrate cooling device 1 of the present invention is a device for performing a cooling process while transporting the substrate W (the glass substrate for a liquid crystal display device having a rectangular shape in the present embodiment) which has been subjected to heat treatment. First, the overall schematic configuration of the substrate cooling device 1 will be described. The main components of the substrate cooling device 1 include a roller transport mechanism 10, a wind tunnel portion 20, and an air flow forming mechanism 60.

輥搬送機構10係包括複數個輥11及使該些輥之一部分或全部旋轉之馬達(省略圖示)而構成。輥搬送機構10藉由使複數個輥11旋轉,而沿著Y方向以特定速度搬送由輥11所支撐之基板W。本實施形態中,自(-Y)側向(+Y)側搬送基板W。再者,本說明書中,將搬送基板W之Y方向稱作「搬送方向」,將與該搬送方向正交之水平方向(即X方向)稱作「寬度方向」。The roller transport mechanism 10 includes a plurality of rollers 11 and a motor (not shown) that rotates part or all of the rollers. The roller transport mechanism 10 transports the substrate W supported by the roller 11 at a specific speed in the Y direction by rotating a plurality of rollers 11 . In the present embodiment, the substrate W is transferred from the (-Y) side (+Y) side. In the present specification, the Y direction of the transport substrate W is referred to as a "transport direction", and the horizontal direction (ie, the X direction) orthogonal to the transport direction is referred to as a "width direction".

於較基板冷卻裝置1更靠上游側((-Y)側)及更靠下游側((+Y)側)處分別設置有輥輸送機。輥輸送機亦具有複數個輥19,藉由使該輥19旋轉而沿著Y方向搬送基板W。上游側之輥輸送機自前步驟之加熱裝置接收加熱後之基板W並將該基板W搬送至基板冷卻裝置1。下游側之輥輸送機自基板冷卻裝置1接收基板W並將該基板W搬送至下一步驟之裝置(例如曝光裝置)。再者,圖1中,為便於圖示,對上游側及下游側之輥輸送機分別僅顯示1個輥19。A roller conveyor is disposed on the upstream side ((-Y) side) and the downstream side ((+Y) side) of the substrate cooling device 1 respectively. The roller conveyor also has a plurality of rollers 19, and the substrate 19 is conveyed in the Y direction by rotating the roller 19. The roller conveyor on the upstream side receives the heated substrate W from the heating device of the previous step and conveys the substrate W to the substrate cooling device 1. The roller conveyor on the downstream side receives the substrate W from the substrate cooling device 1 and transports the substrate W to a device (for example, an exposure device) of the next step. In addition, in FIG. 1, for the convenience of illustration, only one roller 19 is shown to the roller conveyor of the upstream side and the downstream side, respectively.

由上游側及下游側之輥輸送機之複數個輥19及輥搬送機構10之複數個輥11之頂點所形成之平面為基板W之搬送平面,沿著該搬送平面於Y方向上形成有基板W之搬送通路。再者,複數個輥19之頂點之高度位置與輥搬送機構10之複數個輥11之頂點之高度位置相同。The plane formed by the plurality of rollers 19 of the roller conveyors on the upstream side and the downstream side and the apexes of the plurality of rollers 11 of the roller transport mechanism 10 is the transport plane of the substrate W, and the substrate is formed in the Y direction along the transport plane. W transfer path. Further, the height positions of the apexes of the plurality of rollers 19 are the same as the height positions of the apexes of the plurality of rollers 11 of the roller transport mechanism 10.

以包圍由輥搬送機構10所形成之基板W之搬送通路之周圍之方式設置風洞部20。風洞部20形成為兩端部開放之隧道狀。具體而言,風洞部20之沿著搬送通路之兩端部,即搬送通路之入口側((-Y)側)及出口側((+Y)側)之端部開放,可使基板W通過。又,於風洞部20之入口側端部及出口側端部附設有通風筒50。The wind tunnel portion 20 is provided so as to surround the periphery of the transport path of the substrate W formed by the roller transport mechanism 10. The wind tunnel portion 20 is formed in a tunnel shape in which both end portions are open. Specifically, the end portions of the wind tunnel portion 20 along the inlet side ((-Y) side) and the outlet side ((+Y) side) of the conveyance path are opened, and the substrate W can be passed. . Further, a ventilating cylinder 50 is attached to the inlet side end portion and the outlet side end portion of the wind tunnel portion 20.

以包圍基板W之搬送通路之周圍之方式設置兩端部開放之風洞部20,並且於該風洞部20之兩端部附設有通風筒50,藉此風洞部20及通風筒50之內側空洞部被規定為兩端部開放之氣體流路25。氣體流路25形成於輥搬送機構10所形成之基板W之搬送通路之周圍。本說明書中,將氣體流路25之入口側端部(即圖1之(-Y)側之開口)稱作「基板搬入口21」,將出口側端部(圖1之(+Y)側之開口)稱作「基板搬出口22」。A wind tunnel portion 20 having both end portions opened is provided so as to surround the periphery of the transport path of the substrate W, and a ventilating cylinder 50 is attached to both end portions of the wind tunnel portion 20, whereby the wind tunnel portion 20 and the inner cavity portion of the ventilating cylinder 50 are provided It is defined as a gas flow path 25 that is open at both ends. The gas flow path 25 is formed around the transfer path of the substrate W formed by the roller transport mechanism 10. In the present specification, the inlet side end portion of the gas flow path 25 (that is, the opening on the (-Y) side in FIG. 1) is referred to as "substrate transfer inlet 21", and the outlet side end portion ((+Y) side of FIG. 1) The opening is referred to as "substrate transfer port 22".

第1實施形態中,排氣箱70連接於風洞部20之搬送方向之中央部。排氣箱70將氣體流路25內之環境氣體排出。又,於基板搬入口21及基板搬出口22之附近設置有氣刀噴嘴80。氣刀噴嘴80自基板搬入口21或基板搬出口22向氣體流路25吹入空氣。藉由該些來自排氣箱70之排氣及氣刀噴嘴80之空氣吹入而於氣體流路25中沿著基板W之搬送方向形成氣流。即,第1實施形態中,藉由排氣箱70及氣刀噴嘴80而構成氣流形成機構60。以下,對各部分之構成進行更詳細說明。In the first embodiment, the exhaust box 70 is connected to the center portion of the wind tunnel portion 20 in the conveying direction. The exhaust box 70 discharges the ambient gas in the gas flow path 25. Further, an air knife nozzle 80 is provided in the vicinity of the substrate carrying inlet 21 and the substrate carrying port 22. The air knife nozzle 80 blows air into the gas flow path 25 from the substrate transfer port 21 or the substrate transfer port 22 . The air from the exhaust port of the exhaust box 70 and the air blow nozzle 80 are blown into the gas flow path 25 to form an air flow along the transport direction of the substrate W. That is, in the first embodiment, the air flow forming mechanism 60 is configured by the exhaust box 70 and the air knife nozzle 80. Hereinafter, the configuration of each part will be described in more detail.

圖2係自下側觀察風洞部20之頂部(上面)之圖。又,圖3係自上側觀察風洞部20之底部(底面)之圖。進而,圖4係自圖1之A-A剖面觀察風洞部20之圖。風洞部20具有剖面成矩形之箱形形狀。風洞部20之壁面可由例如不鏽鋼(例如SUS304或SUS430)之板材構成。本實施形態中,藉由於輥搬送機構10之周圍組裝鋁合金(Al)骨材,並於該骨材上組裝不鏽鋼板材而構成風洞部20。Fig. 2 is a view of the top (upper surface) of the wind tunnel portion 20 as viewed from the lower side. 3 is a view of the bottom (bottom surface) of the wind tunnel portion 20 as viewed from the upper side. Furthermore, Fig. 4 is a view of the wind tunnel portion 20 as seen from the A-A cross section of Fig. 1. The wind tunnel portion 20 has a box shape having a rectangular cross section. The wall surface of the wind tunnel portion 20 may be formed of a plate material such as stainless steel (for example, SUS304 or SUS430). In the present embodiment, the wind tunnel portion 20 is configured by assembling an aluminum alloy (Al) aggregate around the roller conveying mechanism 10 and assembling a stainless steel plate material on the aggregate.

風洞部20之搬送方向之長度可設為數十mm~數千mm左右之任意值,亦可短於基板W之搬送方向長度。例如,第1實施形態中,將風洞部20之搬送方向之長度設為800 mm,但其短於第4代(G4)以下之玻璃基板之長度。於風洞部20之搬送方向之長度較長之情形時,亦可於頂部或底部安裝加強桿以使壁面不撓曲。又,風洞部20之寬度方向之長度為設為處理對象之基板W之寬度加上數mm~數十mm左右而得之值即可。進而,風洞部20之高度亦可設為數mm~數十mm左右之任意值。第1實施形態中,將自基板W之搬送通路至風洞部20之頂部及底部為止之間隔設為20 mm。再者,自基板W之搬送通路至風洞部20之頂部及底部為止之間隔設為可加以調整。The length of the transport direction of the wind tunnel portion 20 can be any value of about several tens of mm to several thousand mm, and can be shorter than the transport direction length of the substrate W. For example, in the first embodiment, the length of the wind tunnel portion 20 in the transport direction is 800 mm, but it is shorter than the length of the glass substrate of the fourth generation (G4) or less. When the length of the conveying direction of the wind tunnel portion 20 is long, the reinforcing rod may be attached to the top or the bottom portion so that the wall surface is not bent. Further, the length of the wind tunnel portion 20 in the width direction may be a value obtained by adding a width of several mm to several tens of mm to the width of the substrate W to be processed. Further, the height of the wind tunnel portion 20 may be any value of about several mm to several tens of mm. In the first embodiment, the interval from the transfer path of the substrate W to the top and bottom of the wind tunnel portion 20 is set to 20 mm. Further, the interval from the transfer path of the substrate W to the top and bottom of the wind tunnel portion 20 can be adjusted.

如圖2所示,於風洞部20之頂部穿設有與氣體流路25連通之複數個(第1實施形態中為8個)排氣口71。8個排氣口71形成於風洞部20之搬送方向之中央部。又,8個排氣口71沿著寬度方向成一列地排列形成。各排氣口71形成與搬送方向相比寬度方向較長之長孔形狀。As shown in FIG. 2, a plurality of (eight in the first embodiment) exhaust ports 71 that communicate with the gas flow path 25 are formed in the top of the wind tunnel portion 20. Eight exhaust ports 71 are formed in the wind tunnel portion 20. The central part of the transport direction. Further, eight exhaust ports 71 are formed in a line in the width direction. Each of the exhaust ports 71 has a long hole shape that is longer in the width direction than the transport direction.

如圖2及圖4所示,於8個排氣口71之各自之上側設置有排氣箱70。即,於風洞部20之頂部上面,對應於8個排氣口71而設置有8個排氣箱70。8個排氣箱70經由排氣配管74而與鼓風機75連通連接。於排氣配管74中插設有排氣閥72及流量調整閥73。排氣閥72及流量調整閥73個別地設置於8個排氣箱70之各個上。由於以如此方式構成,故可藉由一面使鼓風機75作動一面使排氣閥72開放,而使排氣箱70內成為負壓並自排氣口71將氣體流路25內之環境氣體排出。又,可藉由個別地調整8個流量調整閥73,而個別地調整來自排列於寬度方向之8個排氣口71之排氣流量。As shown in FIGS. 2 and 4, an exhaust box 70 is provided on each of the eight exhaust ports 71. That is, eight exhaust boxes 70 are provided on the top of the wind tunnel portion 20 corresponding to the eight exhaust ports 71. The eight exhaust boxes 70 are connected to the blower 75 via the exhaust pipe 74. An exhaust valve 72 and a flow rate adjusting valve 73 are inserted into the exhaust pipe 74. The exhaust valve 72 and the flow rate adjusting valve 73 are individually provided on each of the eight exhaust boxes 70. With this configuration, the exhaust valve 72 can be opened while the blower 75 is actuated, and the inside of the exhaust box 70 can be made to be negatively pressurized, and the ambient gas in the gas flow path 25 can be discharged from the exhaust port 71. Further, the flow rate of the exhaust gas from the eight exhaust ports 71 arranged in the width direction can be individually adjusted by individually adjusting the eight flow rate adjusting valves 73.

又,於風洞部20之頂部內壁面與搬送方向平行地延伸設置有複數個整流扇23(第1實施形態中為7個)。整流扇23之鉛直方向(Z方向)之長度為數mm左右(第1實施形態中為約7 mm)。如圖2所示,於沿著寬度方向之8個排氣口71之排列中,以1個整流扇23通過相鄰之排氣口71之間之方式構成。Further, a plurality of rectifying fans 23 (seven in the first embodiment) are extended in parallel with the conveying direction on the top inner wall surface of the wind tunnel portion 20. The length of the vertical direction (Z direction) of the rectifying fan 23 is about several mm (about 7 mm in the first embodiment). As shown in FIG. 2, in the arrangement of the eight exhaust ports 71 along the width direction, one rectifying fan 23 is formed between the adjacent exhaust ports 71.

另一方面,如圖3所示,於風洞部20之底部設置有用以使輥搬送機構10之輥11之上側之一部分突出之開口部31。各開口部31之大小設為與較風洞部20之底部更向上側突出之輥11之尺寸(突出部位之尺寸)相比稍大之程度,以使氣體流路25與較風洞部20之底部更靠下方之空間之間之空氣之出入儘可能地少。On the other hand, as shown in FIG. 3, an opening portion 31 for projecting a part of the upper side of the roller 11 of the roller transport mechanism 10 is provided at the bottom of the wind tunnel portion 20. The size of each of the openings 31 is set to be slightly larger than the size of the roller 11 (the size of the protruding portion) which protrudes upward from the bottom of the wind tunnel portion 20 so as to make the gas flow path 25 and the bottom of the wind tunnel portion 20 The air between the lower spaces is as small as possible.

如圖3所示,於風洞部20之底部之寬度方向兩端附近,沿著搬送方向成一列地形成有複數個開口部31。另一方面,於除寬度方向兩端附近以外之內側區域中,以沿著搬送方向相鄰之開口部31之寬度方向位置一點點地偏移之方式形成有複數個開口部31。如此配置開口部31之原因在於考慮到:加熱後之基板W直接接觸於輥11,藉此該接觸部位因熱傳導而導致溫度降低。即,於除基板W之寬度方向兩端附近以外之內側區域中,由於沿著搬送方向相鄰之輥11之寬度方向位置偏移,故而該些輥不會接觸於基板W之同一部位,將與輥11之接觸對基板W之面內溫度分佈之均勻性所造成之影響抑制於最小限度。與此相對,於基板W之寬度方向兩端附近,排成一列之複數個輥11之全部斷斷續續地接觸於基板W之同一部位,因此有可能導致與其他內側區域相比溫度降低變得顯著。然而,基板W之寬度方向兩端附近係不作為器件使用之區域,因此不必與其他內側區域相同地均勻冷卻。As shown in FIG. 3, a plurality of openings 31 are formed in a row along the transport direction in the vicinity of both ends in the width direction of the bottom portion of the wind tunnel portion 20. On the other hand, in the inner region excluding the vicinity of both ends in the width direction, a plurality of openings 31 are formed so as to be slightly offset in the width direction of the opening 31 adjacent to each other in the transport direction. The reason why the opening portion 31 is disposed in this manner is that it is considered that the heated substrate W is in direct contact with the roller 11, whereby the contact portion is lowered in temperature due to heat conduction. In other words, in the inner region except for the vicinity of both ends in the width direction of the substrate W, since the positions of the rollers 11 adjacent to each other in the transport direction are shifted in the width direction, the rollers do not contact the same portion of the substrate W, and The influence of the contact with the roller 11 on the uniformity of the in-plane temperature distribution of the substrate W is suppressed to a minimum. On the other hand, in the vicinity of both ends in the width direction of the substrate W, all of the plurality of rollers 11 arranged in a row intermittently contact the same portion of the substrate W, and thus the temperature drop may become remarkable as compared with the other inner regions. However, since the vicinity of both ends in the width direction of the substrate W is not used as a device, it is not necessary to uniformly cool the same as the other inner regions.

又,於風洞部20之底部亦穿設有與氣體流路25連通之複數個排氣口71(第1實施形態中為6個)。6個排氣口71形成於風洞部20之搬送方向之中央部。又,與頂部之排氣口相同,6個排氣口71沿著寬度方向排成一列地形成,各排氣口71形成與搬送方向相比寬度方向較長之長孔形狀。Further, a plurality of exhaust ports 71 (six in the first embodiment) that communicate with the gas flow path 25 are also formed at the bottom of the wind tunnel portion 20. The six exhaust ports 71 are formed in the central portion of the wind tunnel portion 20 in the transport direction. Further, similarly to the exhaust port at the top, the six exhaust ports 71 are formed in a line in the width direction, and each of the exhaust ports 71 has a long hole shape that is longer in the width direction than the transport direction.

如圖3及圖4所示,於6個排氣口71之各自之下側設置有排氣箱70。即,於風洞部20之底部下表面,對應於6個排氣口71而設置有6個排氣箱70。與設置於頂部之排氣箱70相同,6個排氣箱70經由排氣配管74而與鼓風機75連通連接。於排氣配管74中插設有排氣閥72及流量調整閥73。排氣閥72及流量調整閥73個別地設置於6個排氣箱70之各個上。因此,可藉由一面使鼓風機75作動一面使排氣閥72開放,而使排氣箱70內成為負壓並自排氣口71將氣體流路25內之環境氣體排出。又,可藉由個別地調整6個流量調整閥73,而個別地調整來自沿寬度方向排列於風洞部20之底部之6個排氣口71之排氣流量。As shown in FIGS. 3 and 4, an exhaust box 70 is provided below each of the six exhaust ports 71. That is, six exhaust boxes 70 are provided on the lower surface of the bottom portion of the wind tunnel portion 20 corresponding to the six exhaust ports 71. Similarly to the exhaust box 70 provided at the top, the six exhaust boxes 70 are connected to the blower 75 via the exhaust pipe 74. An exhaust valve 72 and a flow rate adjusting valve 73 are inserted into the exhaust pipe 74. The exhaust valve 72 and the flow rate adjusting valve 73 are individually provided on each of the six exhaust boxes 70. Therefore, the exhaust valve 72 can be opened while the blower 75 is actuated, and the inside of the exhaust tank 70 can be made to be negatively pressurized, and the ambient gas in the gas flow path 25 can be discharged from the exhaust port 71. Moreover, the flow rate of the exhaust gas from the six exhaust ports 71 arranged at the bottom of the wind tunnel portion 20 in the width direction can be individually adjusted by individually adjusting the six flow rate adjusting valves 73.

又,與頂部之整流扇相同之複數個整流扇23(第1實施形態中為4個)與搬送方向平行地延伸設置於風洞部20底部之內壁面。再者,以包圍開口部31之周圍之方式設置整流板以使氣體流路25之氣流不自輥11與開口部31之間隙流出。Further, a plurality of rectifying fans 23 (four in the first embodiment) which are the same as the rectifying fan at the top are extended in the inner wall surface of the bottom portion of the wind tunnel portion 20 in parallel with the conveying direction. Further, a rectifying plate is provided so as to surround the periphery of the opening portion 31 so that the air flow of the gas flow path 25 does not flow out from the gap between the roller 11 and the opening portion 31.

返回至圖1,於風洞部20之底部外壁面,設置有覆蓋輥11之較底部更靠下方之全體(即除自開口部31突出之部分以外之全體)之圍罩35。藉由設置該圍罩35,雖然圍罩35之內側空間與氣體流路25成為經由開口部31而連通之狀態,但氣體流路25內之環境氣體與基板冷卻裝置1之外部環境氣體被隔斷。Returning to Fig. 1, on the outer wall surface of the bottom portion of the wind tunnel portion 20, a shroud 35 covering the entire lower portion of the roller 11 (i.e., the entire portion excluding the portion protruding from the opening portion 31) is provided. By providing the shroud 35, the inner space of the shroud 35 and the gas flow path 25 are in communication with each other via the opening 31, but the ambient gas in the gas flow path 25 is blocked from the external ambient gas of the substrate cooling device 1. .

於風洞部20之兩端部附設有通風筒50。通風筒50於風洞部20之兩端部分別設置於頂部及底部之雙方。於風洞部20之兩端部,於設置於基板W之搬送通路之上下方之1對通風筒50設置有雙方之間隔最窄之縮徑部55。自風洞部20之端部至縮徑部55為止,上下1對通風筒50之間隔慢慢變窄。縮徑部55上之1對通風筒50之間隔變得最窄,且較風洞部20之頂部與底部之間之間隔窄。而且,夾著1對通風筒50之縮徑部55而使風洞部20之端部之相反側形成為雙方之間隔擴大之曲面形狀(R狀)。即,形成為氣體流路25之基板搬入口21及基板搬出口22向上下擴展之通風筒構造。通風筒50之曲面形狀係朝向基板W之搬送通路側凸出。A ventilating cylinder 50 is attached to both end portions of the wind tunnel portion 20. The ventilator 50 is disposed at both ends of the wind tunnel portion 20 at both the top and the bottom. At both end portions of the wind tunnel portion 20, a pair of ventilating cylinders 50 disposed above and below the transport path of the substrate W are provided with a reduced diameter portion 55 having the narrowest interval therebetween. From the end of the wind tunnel portion 20 to the reduced diameter portion 55, the interval between the upper and lower pairs of the ventilating cylinders 50 is gradually narrowed. The interval between the pair of ventilating cylinders 50 on the reduced diameter portion 55 becomes the narrowest and is narrower than the interval between the top and the bottom of the wind tunnel portion 20. Further, the opposite side of the end portion of the wind tunnel portion 20 is formed by sandwiching the reduced diameter portion 55 of the pair of the ventilating cylinders 50 into a curved shape (R shape) in which the distance between the two is widened. In other words, the substrate carrying inlet 21 and the substrate carrying port 22 of the gas flow path 25 are formed in a ventilating cylinder structure that expands upward and downward. The curved shape of the ventilating cylinder 50 is convex toward the conveying path side of the substrate W.

又,於基板搬入口21及基板搬出口22之附近設置有氣刀噴嘴80。氣刀噴嘴80於基板搬入口21及基板搬出口22之各者設置於較基板W之搬送通路更靠上方及下方處。氣刀噴嘴80為長度方向成為X方向之狹縫噴嘴,朝向基板搬入口21或基板搬出口22呈於寬度方向延伸之簾狀地噴出空氣。氣刀噴嘴80之安裝位置及安裝角度可調整,較佳為來自氣刀噴嘴80之空氣噴出方向為斜方向,且預先調整為該空氣噴出方向相切於與該氣刀噴嘴80對應之通風筒50之曲面。Further, an air knife nozzle 80 is provided in the vicinity of the substrate carrying inlet 21 and the substrate carrying port 22. Each of the air knife nozzles 80 is disposed above and below the substrate transfer port 21 and the substrate transfer port 22 above the transfer path of the substrate W. The air knife nozzle 80 is a slit nozzle whose length direction is the X direction, and ejects air toward the substrate carrying port 21 or the substrate carrying port 22 in a curtain shape extending in the width direction. The installation position and the installation angle of the air knife nozzle 80 can be adjusted. Preferably, the air ejection direction from the air knife nozzle 80 is oblique, and the air ejection direction is adjusted to be tangent to the air vent corresponding to the air knife nozzle 80. 50 curved surface.

其次,對具有上述構成之基板冷卻裝置1之冷卻處理動作進行說明。於基板冷卻裝置1之前段側設置有進行基板W之加熱處理之加熱裝置,由該加熱裝置加熱後之基板W藉由輥輸送機而搬送至基板冷卻裝置1。加熱後之基板W之溫度為100℃~150℃左右。Next, the cooling processing operation of the substrate cooling device 1 having the above configuration will be described. A heating device that heats the substrate W is provided on the front side of the substrate cooling device 1, and the substrate W heated by the heating device is transferred to the substrate cooling device 1 by a roller conveyor. The temperature of the substrate W after heating is about 100 ° C to 150 ° C.

於加熱後之基板W到達基板搬入口21之前,藉由氣流形成機構60而於氣體流路25內形成空氣流。圖5係用以說明形成於氣體流路25中之空氣流之圖。一面使鼓風機75作動一面使排氣閥72開放,藉此排氣箱70內成為負壓,氣體流路25內之環境氣體自排氣口71排出。於風洞部20之頂部及底部之雙方利用排氣箱70進行排氣。複數個排氣箱70(於風洞部20之頂部為8個,於底部為6個)之各自之排氣流量可藉由流量調整閥73而個別地調整,且以能夠遍及氣體流路25之寬度方向而以儘量均勻之流量排氣之方式進行調整。Before the heated substrate W reaches the substrate transfer inlet 21, an air flow is formed in the gas flow path 25 by the air flow forming mechanism 60. FIG. 5 is a view for explaining the flow of air formed in the gas flow path 25. While the blower 75 is actuated, the exhaust valve 72 is opened, whereby the inside of the exhaust tank 70 becomes a negative pressure, and the ambient gas in the gas flow path 25 is discharged from the exhaust port 71. Both the top and the bottom of the wind tunnel 20 are exhausted by the exhaust box 70. The respective exhaust gas flow rates of the plurality of exhaust boxes 70 (eight at the top of the wind tunnel portion 20 and six at the bottom) can be individually adjusted by the flow rate adjusting valve 73, and can be distributed throughout the gas flow path 25 Adjust in the width direction and exhaust as much as possible.

與排氣一同地自氣刀噴嘴80向基板搬入口21及基板搬出口22吹入空氣。自上下1對氣刀噴嘴80向基板搬入口21及基板搬出口22之各自吹入空氣。氣刀噴嘴80呈於寬度方向延伸之簾狀地噴出空氣,因此可遍及氣體流路25之寬度方向而以均勻地流量向基板搬入口21及基板搬出口22吹入空氣。Air is blown into the substrate transfer port 21 and the substrate transfer port 22 from the air knife nozzle 80 together with the exhaust gas. Air is blown into each of the substrate transfer port 21 and the substrate transfer port 22 from the upper and lower pair of air knife nozzles 80. Since the air knife nozzle 80 ejects air in a curtain shape extending in the width direction, air can be blown into the substrate transfer port 21 and the substrate transfer port 22 at a uniform flow rate in the width direction of the gas flow path 25.

與自氣體流路25之中央部進行排氣一同地自兩端部吹入空氣,藉此於氣體流路25中形成沿著圖5所示之基板W之搬送方向之空氣流。即,自入口側之上下1對氣刀噴嘴80吹入至基板搬入口21之空氣,通過入口側之通風筒50之縮徑部55而於風洞部20內朝向(+Y)側流動,並自形成於風洞部20之中央部之排氣口71向排氣箱70排氣。另一方面,自出口側之上下1對氣刀噴嘴80吹入至基板搬出口22之空氣,通過出口側之通風筒50之縮徑部55而於風洞部20內朝向(-Y)側流動,並自形成於風洞部20之中央部之排氣口71向排氣箱70排氣。其結果,如圖5所示,於沿著基板W之搬送方向之氣體流路25之較中央部更靠上游側((-Y)側)形成有從(-Y)側朝向(+Y)側之氣流,反之於較中央部更靠下游側((+Y)側)形成有自(+Y)側朝向(-Y)側之氣流。Air is blown from both end portions together with the exhaust from the central portion of the gas flow path 25, whereby an air flow in the transport direction of the substrate W shown in Fig. 5 is formed in the gas flow path 25. In other words, the air that has been blown into the substrate transfer port 21 by the pair of air knife nozzles 80 from the inlet side flows through the reduced diameter portion 55 of the ventilator 50 on the inlet side toward the (+Y) side in the wind tunnel portion 20, and The exhaust port 71 formed in the central portion of the wind tunnel portion 20 is exhausted to the exhaust box 70. On the other hand, the air blown into the substrate transfer port 22 from the upper side of the outlet side of the air knife nozzle 80 flows through the reduced diameter portion 55 of the ventilating cylinder 50 on the outlet side toward the (-Y) side in the wind tunnel portion 20. The exhaust port 71 is exhausted from the exhaust port 71 formed at the central portion of the wind tunnel portion 20. As a result, as shown in FIG. 5, the (-Y) side is oriented (+Y) on the upstream side ((-Y) side) of the gas flow path 25 along the transport direction of the substrate W. The air flow on the side, on the other hand, on the downstream side ((+Y) side) of the central portion, is formed with a flow from the (+Y) side toward the (-Y) side.

加熱後之基板W自基板搬入口21搬送至風洞部20內,沿著形成有圖5之空氣流之氣體流路25而藉由輥搬送機構10自(-Y)側向(+Y)側搬送。於基板W位於風洞部20之較中央部更靠上游側時,向與搬送基板W之方向相同之方向流動空氣流。另一方面,於基板W位於風洞部20之較中央部更靠下游側時,向與搬送基板W之方向相反之方向流動空氣流。任一情形時,可係與基板W之搬送方向平行地流動空氣流。The heated substrate W is transferred from the substrate carrying inlet 21 into the wind tunnel portion 20, and is moved from the (-Y) side (+Y) side by the roller transport mechanism 10 along the gas flow path 25 in which the air flow of FIG. 5 is formed. Transfer. When the substrate W is located on the upstream side of the center portion of the wind tunnel portion 20, the air flow flows in the same direction as the direction in which the substrate W is transported. On the other hand, when the substrate W is located on the downstream side of the center portion of the wind tunnel portion 20, the air flow flows in a direction opposite to the direction in which the substrate W is transported. In either case, the air flow may be flowed in parallel with the transport direction of the substrate W.

因此,沿著經加熱之基板W之表面而平行地流動空氣流,該空氣流奪去基板W之熱量並自排氣口71送出,藉此使基板W一面搬送一面進行冷卻。於氣體流路25中形成有與基板W之搬送方向平行之空氣流,因此基板W之表面與沿著搬送方向之空氣流持續接觸,從而可效率佳地冷卻基板W。又,於形成於風洞部20內側之氣體流路25中流動空氣流,因此可防止空氣流擴散而使之持續作用於基板W之表面。而且,藉由排氣箱70及氣刀噴嘴80而遍及氣體流路25之寬度方向以均勻之流量流動空氣流,因此可以基板W之面內溫度分佈變得均勻之方式進行冷卻。經冷卻而溫度降低之基板W自基板搬出口22搬出,並藉由下游側之輥輸送機而搬送至下一步驟之裝置。Therefore, an air flow flows in parallel along the surface of the heated substrate W, and the air flow takes away the heat of the substrate W and is sent out from the exhaust port 71, whereby the substrate W is cooled while being conveyed. Since the air flow parallel to the conveyance direction of the substrate W is formed in the gas flow path 25, the surface of the substrate W is continuously in contact with the air flow in the conveyance direction, whereby the substrate W can be efficiently cooled. Further, since the air flow flows through the gas flow path 25 formed inside the wind tunnel portion 20, the air flow can be prevented from diffusing and continuously acting on the surface of the substrate W. Further, since the air flow is performed at a uniform flow rate in the width direction of the gas flow path 25 by the exhaust box 70 and the air knife nozzle 80, the temperature distribution in the in-plane of the substrate W can be made uniform. The substrate W which has been cooled and lowered in temperature is carried out from the substrate carrying port 22, and is transported to the apparatus of the next step by the roller conveyor on the downstream side.

又,於氣體流路25中形成氣流,並將該氣流自排氣口71排出至裝置外部,因此於較前段側之加熱裝置更靠前之步驟為光阻等處理液之塗佈步驟之情形時,可將自經加熱之基板W產生之昇華物或溶媒成分與氣流一同排出至裝置外部。其結果,可將加熱後之冷卻步驟之基板W維持於潔淨狀態。Further, a gas flow is formed in the gas flow path 25, and the gas flow is discharged from the exhaust port 71 to the outside of the apparatus. Therefore, the step ahead of the heating device on the front side is the coating step of the treatment liquid such as photoresist. At this time, the sublimate or solvent component generated from the heated substrate W can be discharged to the outside of the apparatus together with the gas stream. As a result, the substrate W in the cooling step after heating can be maintained in a clean state.

又,於風洞部20之頂部及底部之內壁面上與搬送方向平行地延伸設置有整流扇23,因此氣體流路25中之空氣流可被整流為直線性地流動。藉此,可對沿著氣體流路25搬送之基板W之表面均勻地供給空氣流,從而可更均勻地冷卻基板W。Further, since the rectifying fan 23 is extended in parallel with the conveying direction on the inner wall surface of the top and bottom of the wind tunnel portion 20, the air flow in the gas flow path 25 can be rectified to linearly flow. Thereby, the air flow can be uniformly supplied to the surface of the substrate W conveyed along the gas flow path 25, whereby the substrate W can be more uniformly cooled.

又,第1實施形態中,設為於風洞部20之兩端部分別附設有上下1對通風筒50之通風筒構造。而且,對應於入口側及出口側之1對通風筒50而分別設置有氣刀噴嘴80。自氣刀噴嘴80以沿著所對應之通風筒50之曲面之方式呈簾狀地噴出空氣。更嚴格地說,如圖6所示,以使來自氣刀噴嘴80之空氣噴出方向AR與通風筒50之曲面相切之方式噴出空氣。例如,以使來自設置於入口側之上側之氣刀噴嘴80之空氣噴出方向AR與入口側之上側通風筒50之曲面相切之方式呈簾狀地噴出空氣。Further, in the first embodiment, the ventilating cylinder structure of the upper and lower ventilating cylinders 50 is attached to both end portions of the wind tunnel portion 20. Further, an air knife nozzle 80 is provided for each of the pair of ventilating cylinders 50 on the inlet side and the outlet side. The air knife nozzle 80 ejects air in a curtain shape along the curved surface of the corresponding ventilating cylinder 50. More strictly speaking, as shown in Fig. 6, air is ejected so that the air ejection direction AR from the air knife nozzle 80 is tangent to the curved surface of the ventilating cylinder 50. For example, air is ejected in a curtain shape so that the air ejection direction AR from the air knife nozzle 80 provided on the upper side of the inlet side is tangent to the curved surface of the inlet side upper side ventilator 50.

通常,於對曲面噴吹流體之情形時,因柯安達效應而沿著該曲面使流體之流向發生改變。即,第1實施形態中,如圖6所示,自氣刀噴嘴80向斜方向(斜上方或斜下方)呈簾狀地噴出空氣,但由於沿著通風筒50之曲面噴吹空氣,故而該空氣之流向因柯安達效應而沿著通風筒50之曲面發生改變,從而被順利地導引至氣體流路25。其結果,可將自氣刀噴嘴80噴出之空氣效率佳地導入至氣體流路25,可提高氣體流路25內所形成之空氣流之流速而提高基板W之冷卻效率。Usually, in the case of injecting a fluid to a curved surface, the flow direction of the fluid is changed along the curved surface due to the Coanda effect. In other words, in the first embodiment, as shown in FIG. 6, the air is ejected from the air knife nozzle 80 in a diagonal direction (inclined upward or obliquely downward), but air is blown along the curved surface of the ventilating cylinder 50. The flow of the air is changed along the curved surface of the ventilator 50 due to the Coanda effect, thereby being smoothly guided to the gas flow path 25. As a result, the air ejected from the air knife nozzle 80 can be efficiently introduced into the gas flow path 25, and the flow velocity of the air flow formed in the gas flow path 25 can be increased to improve the cooling efficiency of the substrate W.

又,沿著通風筒50之曲面高速地流動空氣之結果,藉由伯努利効應而使該空氣之流線上之氣壓降低,可吸引基板搬入口21及基板搬出口22附近之空氣流入氣體流路25。其結果,可使自氣刀噴嘴80噴出之空氣量以上之空氣流入至氣體流路25,可提高氣體流路25內所形成之空氣流之流速而進一步提高基板W之冷卻效率。Further, as a result of the high-speed flow of air along the curved surface of the ventilating cylinder 50, the air pressure on the air flow line is lowered by the Bernoulli effect, and the air inflow near the substrate carrying inlet 21 and the substrate carrying opening 22 can be sucked. Road 25. As a result, air having a volume of air or more ejected from the air knife nozzle 80 can flow into the gas flow path 25, and the flow velocity of the air flow formed in the gas flow path 25 can be increased to further improve the cooling efficiency of the substrate W.

又,上下1對通風筒50之間隔變得最窄之縮徑部55之上下間隔,窄於風洞部20之頂部與底部之間之間隔。藉由於通風筒構造中設置該縮徑部55,可進一步提高來自基板搬入口21及基板搬出口22之空氣之流入速度。藉此,可更強地獲得伯努利効應,可提高氣體流路25內所形成之空氣流之流速而進一步提高基板W之冷卻效率。Further, the reduced diameter portion 55 in which the interval between the upper and lower pairs of the ventilating cylinders 50 is narrowest is spaced upward and downward, and is narrower than the interval between the top and the bottom of the wind tunnel portion 20. By providing the reduced diameter portion 55 in the ventilating cylinder structure, the inflow velocity of the air from the substrate carrying inlet 21 and the substrate carrying port 22 can be further increased. Thereby, the Bernoulli effect can be obtained more strongly, and the flow velocity of the air flow formed in the gas flow path 25 can be increased to further improve the cooling efficiency of the substrate W.

此外,因自氣刀噴嘴80噴吹至通風筒50之曲面時所產生之伯努利効應而產生之氣壓之降低,亦會對沿著搬送通路搬送之基板W帶來影響。若通過基板搬入口21及基板搬出口22之基板W之上側之氣壓低於下側之氣壓,則有基板W受到來自下方之氣壓而浮起之虞。因此,第1實施形態中,如圖6所示,於入口側及出口側,分別使下側通風筒50之縮徑部55與基板W之搬送通路之間隔d1 ,小於上側通風筒50之縮徑部55與搬送通路之間隔d2 。藉此,於基板W通過基板搬入口21或基板搬出口22時,於基板W之較上側而更靠下側處產生更強之伯努利効應,從而使基板W下側之氣壓低於上側之氣壓。其結果,可防止基板W自搬送通路浮起。Further, the decrease in the air pressure generated by the Bernoulli effect generated when the air knife nozzle 80 is blown onto the curved surface of the ventilator 50 also affects the substrate W that is transported along the transport path. When the air pressure on the upper side of the substrate W passing through the substrate carry-in port 21 and the substrate transfer port 22 is lower than the air pressure on the lower side, the substrate W is lifted by the air pressure from the lower side. Therefore, in the first embodiment, as shown in Fig. 6, the distance d 1 between the reduced diameter portion 55 of the lower ventilator 50 and the transfer path of the substrate W is smaller than that of the upper ventilator 50 on the inlet side and the outlet side. The distance between the reduced diameter portion 55 and the transport path is d 2 . Therefore, when the substrate W passes through the substrate carry-in port 21 or the substrate carry-out port 22, a stronger Bernoulli effect is generated on the upper side of the substrate W, and the lower side of the substrate W is lower than the upper side. The pressure. As a result, it is possible to prevent the substrate W from floating from the transfer path.

又,由於設置有覆蓋較風洞部20之底部更靠下方之輥11全體之圍罩35,因此可將自該底部之開口部31與輥11之間之間隙流過氣體流路25之空氣流之流出抑制於最小限度。因此,可防止形成於氣體流路25中之空氣流紊亂,可均勻地冷卻基板W。Further, since the shroud 35 covering the entire lower portion 11 of the wind tunnel portion 20 is provided, the air flow from the gap between the opening portion 31 of the bottom portion and the roller 11 through the gas flow path 25 can be performed. The outflow is suppressed to a minimum. Therefore, the air flow formed in the gas flow path 25 can be prevented from being disturbed, and the substrate W can be uniformly cooled.

<第2實施形態><Second embodiment>

其次,對本發明之第2實施形態進行說明。圖7係表示第2實施形態之基板冷卻裝置之圖。第2實施形態之基板冷卻裝置亦係對加熱後之基板W一面搬送一面進行冷卻處理之裝置。第1實施形態中藉由排氣箱70及氣刀噴嘴80而形成氣流形成機構60,但第2實施形態中未設置氣刀噴嘴80,而僅由排氣箱70構成氣流形成機構60。至於其他方面,第2實施形態之基板冷卻裝置具有與第1實施形態相同之構成,圖7中對與第1實施形態相同之要素附上相同之符號。Next, a second embodiment of the present invention will be described. Fig. 7 is a view showing a substrate cooling device according to a second embodiment; The substrate cooling device according to the second embodiment is also a device that cools the substrate W after heating. In the first embodiment, the air flow forming mechanism 60 is formed by the exhaust box 70 and the air knife nozzle 80. However, in the second embodiment, the air knife nozzle 80 is not provided, and only the air box 70 constitutes the air flow forming mechanism 60. In the other aspects, the substrate cooling device of the second embodiment has the same configuration as that of the first embodiment, and the same elements as those of the first embodiment are denoted by the same reference numerals in FIG.

第2實施形態之基板冷卻裝置中,由於未設置氣刀噴嘴80,因此僅藉由來自排氣箱70之排氣而於氣體流路25內形成空氣流。即,藉由一面使鼓風機75作動一面使排氣閥72開放,而使排氣箱70內成為負壓,氣體流路25內之環境氣體自排氣口71排出。與第1實施形態相同,複數個排氣箱70各自之排氣流量可藉由流量調整閥73而個別地調整,且被調整為能夠遍及氣體流路25之寬度方向而以均勻之流量進行排氣。In the substrate cooling device of the second embodiment, since the air knife nozzle 80 is not provided, the air flow is formed in the gas flow path 25 only by the exhaust gas from the exhaust box 70. That is, the exhaust valve 72 is opened while the blower 75 is actuated, and the inside of the exhaust tank 70 is made a negative pressure, and the ambient gas in the gas flow path 25 is discharged from the exhaust port 71. Similarly to the first embodiment, the exhaust gas flow rate of each of the plurality of exhaust boxes 70 can be individually adjusted by the flow rate adjusting valve 73, and can be adjusted so as to be evenly distributed in the width direction of the gas flow path 25. gas.

藉由氣體流路25之環境氣體自排氣口71排出而對氣體流路25內進行減壓,因此自基板搬入口21及基板搬出口22吸引外部之環境氣體。其結果,如圖7所示,於氣體流路25中形成有沿著基板W之搬送方向之空氣流。排氣箱70設置於風洞部20之中央部,因此於沿著基板W之搬送方向之氣體流路25之較中央部更靠上游側形成有自(-Y)側向(+Y)側之氣流,反之於較中央部更靠下游側形成有自(+Y)側向(-Y)側之氣流。因此,與第1實施形態相同,於基板W位於風洞部20之較中央部更靠上游側時,向與搬送基板W之方向相同之方向流動空氣流,於基板W位於風洞部20之較中央部更靠下游側時,向與搬送基板W之方向相反之方向流動空氣流。任一情形時,均係與基板W之搬送方向平行地流動空氣流。Since the atmosphere of the gas flow path 25 is discharged from the exhaust port 71 and the inside of the gas flow path 25 is depressurized, the external atmosphere is sucked from the substrate transfer port 21 and the substrate transfer port 22. As a result, as shown in FIG. 7, an air flow along the transport direction of the substrate W is formed in the gas flow path 25. Since the exhaust box 70 is provided in the central portion of the wind tunnel portion 20, the (-Y) side (+Y) side is formed on the upstream side of the gas flow path 25 along the transport direction of the substrate W. The air flow, on the other hand, forms a gas flow from the (+Y) lateral (-Y) side on the downstream side of the center portion. Therefore, when the substrate W is located on the upstream side of the center portion of the wind tunnel portion 20, the air flow flows in the same direction as the direction in which the substrate W is transported, and the substrate W is located at the center of the wind tunnel portion 20, as in the first embodiment. When the portion is further downstream, the air flow flows in a direction opposite to the direction in which the substrate W is transferred. In either case, the air flow flows in parallel with the transport direction of the substrate W.

因此,沿著經加熱之基板W之表面而平行地流動空氣流,該空氣流奪去基板W之熱量並自排氣口71送出,藉此可對基板W一面搬送一面進行冷卻。由於氣體流路25中形成有與基板W之搬送方向平行之空氣流,因此基板W之表面持續接觸於沿著搬送方向之空氣流,從而可效率佳地冷卻基板W。又,由於在形成於風洞部20內側之氣體流路25中流動空氣流,因此可防止空氣流擴散而使之持續作用於基板W之表面。而且,藉由排氣箱70而遍及氣體流路25之寬度方向以均勻流量流過空氣流,因此可以使基板W之面內溫度分佈變得均勻之方式冷卻基板W。Therefore, an air flow flows in parallel along the surface of the heated substrate W, and the air flow takes away the heat of the substrate W and is sent out from the exhaust port 71, whereby the substrate W can be cooled while being transported. Since the air flow is formed in the gas flow path 25 in parallel with the transport direction of the substrate W, the surface of the substrate W is continuously in contact with the air flow in the transport direction, so that the substrate W can be efficiently cooled. Further, since the air flow flows through the gas flow path 25 formed inside the wind tunnel portion 20, the air flow can be prevented from being diffused and continuously applied to the surface of the substrate W. Further, since the air flow is caused to flow in a uniform flow rate in the width direction of the gas flow path 25 by the exhaust box 70, the substrate W can be cooled so that the in-plane temperature distribution of the substrate W becomes uniform.

又,第2實施形態中,僅藉由來自排氣箱70之排氣而於氣體流路25內形成空氣流,因此不易產生伴隨噴吹空氣而於基板W附著微粒等的情況。第2實施形態中,亦設為於風洞部20之兩端部分別附設有上下1對通風筒50之通風筒構造。第2實施形態中不自氣刀噴嘴80噴出空氣,因此與第1實施形態相比氣流較弱,但於自基板搬入口21及基板搬出口22吸引外部之環境氣體時,可藉由通風筒50而獲得柯安達效應及伯努利効應。其結果,可提高形成於氣體流路25內之空氣流之流速而提高基板W之冷卻效率。此外,可獲得與第1實施形態相同之構成所帶來之相同之效果。In the second embodiment, the air flow is formed in the gas flow path 25 only by the exhaust gas from the exhaust box 70. Therefore, it is difficult to cause the particles or the like to adhere to the substrate W accompanying the blowing of the air. In the second embodiment, the ventilating cylinder structure in which the upper and lower ventilating cylinders 50 are attached to both ends of the wind tunnel portion 20 is also provided. In the second embodiment, air is not blown from the air knife nozzle 80. Therefore, the airflow is weaker than that of the first embodiment. However, when the external atmosphere is sucked from the substrate loading port 21 and the substrate carrying port 22, the air can be ventilated. 50 and get the Coanda effect and the Bernoulli effect. As a result, the flow velocity of the air flow formed in the gas flow path 25 can be increased, and the cooling efficiency of the substrate W can be improved. Further, the same effects as those of the configuration of the first embodiment can be obtained.

<第3實施形態><Third embodiment>

其次,對本發明之第3實施形態進行說明。圖8係表示第3實施形態之基板冷卻裝置之圖。圖8中,對與第1實施形態相同之要素附上相同之符號。第3實施形態之基板冷卻裝置亦係對加熱後之基板W一面搬送一面進行冷卻處理之裝置。Next, a third embodiment of the present invention will be described. Fig. 8 is a view showing a substrate cooling device according to a third embodiment; In FIG. 8, the same elements as those in the first embodiment are denoted by the same reference numerals. The substrate cooling device according to the third embodiment is also a device that cools the substrate W after heating.

第3實施形態中,與第1實施形態相同,藉由排氣箱70及氣刀噴嘴80而構成氣流形成機構60。但第3實施形態中,並非於風洞部20之中央部而於出口側端部附近設置排氣口71及排氣箱70。又,僅於風洞部20之入口側端部附設上下1對通風筒50,並且僅於該入口側之通風筒50附近設置氣刀噴嘴80。至於其他方面,第3實施形態之基板冷卻裝置具有與第1實施形態相同之構成。In the third embodiment, the air flow forming mechanism 60 is configured by the exhaust box 70 and the air knife nozzle 80 as in the first embodiment. However, in the third embodiment, the exhaust port 71 and the exhaust box 70 are provided not in the center portion of the wind tunnel portion 20 but in the vicinity of the outlet side end portion. Further, only one pair of upper and lower ventilating cylinders 50 are attached to the inlet side end portion of the wind tunnel portion 20, and the air knife nozzle 80 is provided only in the vicinity of the ventilating cylinder 50 on the inlet side. In other respects, the substrate cooling device according to the third embodiment has the same configuration as that of the first embodiment.

第3實施形態之基板冷卻裝置中,自氣刀噴嘴80向基板搬入口21吹入空氣,並且藉由排氣箱70而自氣體流路25之出口側端部附近進行排氣,藉此如圖8所示於氣體流路25內形成有沿著基板W之搬送方向之空氣流。即,自入口側之上下1對氣刀噴嘴80吹入至基板搬入口21之空氣,通過入口側之通風筒50之縮徑部55流入風洞部20內,並遍及風洞部20之沿著搬送方向之大致全長向(+Y)側流動,且自形成於出口側端部附近之排氣口71向排氣箱70排氣。再者,若可自基板搬出口22自由地流入空氣,則該空氣流入排氣口71而導致無法充分獲得排氣箱70之排氣效果,儘可能減小基板搬出口22之開口面積而抑制來自基板搬出口22之空氣之流入。其結果,如圖8所示,遍及氣體流路25之大致全長而自(-Y)側向(+Y)側形成氣流。由此,第3實施形態中,於基板W沿著氣體流路25搬送時,於與基板W之搬送方向平行且與搬送基板W之方向相同之方向流動空氣流。In the substrate cooling device of the third embodiment, air is blown from the air knife nozzle 80 to the substrate loading port 21, and exhausted from the vicinity of the outlet side end portion of the gas flow path 25 by the exhaust box 70, thereby As shown in FIG. 8, an air flow in the conveying direction of the substrate W is formed in the gas flow path 25. In other words, the air that has been blown into the substrate transfer port 21 by the pair of air knife nozzles 80 from the inlet side flows into the wind tunnel portion 20 through the reduced diameter portion 55 of the ventilator 50 on the inlet side, and is transported along the wind tunnel portion 20 The substantially full length of the direction flows toward the (+Y) side, and the exhaust port 71 formed near the end of the outlet side is exhausted to the exhaust box 70. In addition, when air can flow freely from the substrate carrying port 22, the air flows into the exhaust port 71, and the exhaust effect of the exhaust box 70 cannot be sufficiently obtained, and the opening area of the substrate carrying port 22 is reduced as much as possible to suppress The inflow of air from the substrate discharge port 22. As a result, as shown in FIG. 8, the gas flow is formed from the (-Y) side (+Y) side over the entire length of the gas flow path 25. Thus, in the third embodiment, when the substrate W is transported along the gas flow path 25, the air flow flows in the same direction as the transport direction of the substrate W in the direction parallel to the transport direction of the substrate W.

因此,與第1實施形態相同,沿著經加熱之基板W之表面而平行地流動空氣流,該空氣流奪去基板W之熱量並自排氣口71送出,藉此對基板W一面搬送一面進行冷卻。由於氣體流路25中形成有與基板W之搬送方向平行之空氣流,因此基板W之表面沿著搬送方向與空氣流持續接觸,從而可效率佳地冷卻基板W。又,由於形成於風洞部20內側之氣體流路25中流過空氣流,因此可防止空氣流擴散而使之持續作用於基板W之表面。而且,藉由排氣箱70及氣刀噴嘴80而遍及氣體流路25之寬度方向以均勻流量流動空氣流,因此可以使基板W之面內溫度分佈變得均勻之方式進行冷卻。Therefore, in the same manner as in the first embodiment, the air flow flows in parallel along the surface of the heated substrate W, and the air flow takes away the heat of the substrate W and is sent out from the exhaust port 71, thereby transporting the substrate W. Cool down. Since the air flow is formed in the gas flow path 25 in parallel with the transport direction of the substrate W, the surface of the substrate W is continuously in contact with the air flow along the transport direction, so that the substrate W can be efficiently cooled. Further, since the air flow flows through the gas flow path 25 formed inside the wind tunnel portion 20, the air flow can be prevented from diffusing and continuously acting on the surface of the substrate W. Further, since the air flow is performed at a uniform flow rate in the width direction of the gas flow path 25 by the exhaust box 70 and the air knife nozzle 80, the temperature distribution in the in-plane of the substrate W can be cooled.

又,於基板搬入口21,自氣刀噴嘴80以沿著對應之通風筒50之曲面之方式呈簾狀地噴出空氣,因此可獲得與第1實施形態相同之柯安達效應及伯努利効應。其結果,可提高形成於氣體流路25內之空氣流之流速而進一步提高基板W之冷卻效率。此外,可獲得與第1實施形態相同之構成所帶來之相同之效果。Further, in the substrate carrying inlet 21, air is ejected from the air knife nozzle 80 in a curtain shape along the curved surface of the corresponding ventilating cylinder 50, so that the same Coanda effect and Bernoulli effect as in the first embodiment can be obtained. . As a result, the flow velocity of the air flow formed in the gas flow path 25 can be increased, and the cooling efficiency of the substrate W can be further improved. Further, the same effects as those of the configuration of the first embodiment can be obtained.

再者,第3實施形態中,亦可使排氣箱70之位置與氣刀噴嘴80之位置顛倒過來。即,亦可於風洞部20之入口側端部附近設置排氣口71及排氣箱70,僅於風洞部20之出口側端部附設上下1對通風筒50,並且僅於該出口側之通風筒50之附近設置氣刀噴嘴80。即便如此,亦可於氣體流路25中形成與基板W之搬送方向平行且與搬送基板W之方向相反之方向之空氣流。其結果,可獲得與上述相同之效果。如此,排氣口71及排氣箱70可設置於風洞部20之沿著搬送方向之任意位置。Further, in the third embodiment, the position of the exhaust box 70 and the position of the air knife nozzle 80 may be reversed. In other words, the exhaust port 71 and the exhaust box 70 may be provided in the vicinity of the inlet side end portion of the wind tunnel portion 20, and only one pair of upper and lower ventilating cylinders 50 may be attached to the outlet side end portion of the wind tunnel portion 20, and only on the outlet side. An air knife nozzle 80 is provided in the vicinity of the ventilating cylinder 50. Even in this case, an air flow in a direction parallel to the conveyance direction of the substrate W and opposite to the direction in which the substrate W is conveyed can be formed in the gas flow path 25. As a result, the same effects as described above can be obtained. In this way, the exhaust port 71 and the exhaust box 70 can be provided at any position along the transport direction of the wind tunnel portion 20.

但於如第3實施形態將排氣箱70並非配置於風洞部20之中央部而偏向端部來配置之情形時,無法採用如第2實施形態般之不設置氣刀噴嘴80之構成。其理由在於,於如第3實施形態將排氣箱70配置於風洞部20之出口側端部附近之情形時,自氣體流路25中之基板搬入口21至排氣口71為止之壓力損耗,顯著大於自基板搬出口22至排氣口71為止之壓力損耗,從而形成並非自基板搬入口21而自基板搬出口22朝向排氣口71之氣流,氣體流路25中未形成與搬送方向平行之空氣流。However, in the case where the exhaust box 70 is not disposed at the center portion of the wind tunnel portion 20 and is disposed at the end portion as in the third embodiment, the configuration in which the air knife nozzle 80 is not provided as in the second embodiment cannot be employed. The reason for this is that when the exhaust box 70 is disposed in the vicinity of the outlet-side end portion of the wind tunnel portion 20 in the third embodiment, the pressure loss from the substrate carrying port 21 to the exhaust port 71 in the gas flow path 25 is caused. The pressure loss from the substrate carry-out port 22 to the exhaust port 71 is significantly larger than the air flow from the substrate transfer port 22 toward the exhaust port 71, and the gas flow path 25 is not formed and transported. Parallel air flow.

<第4實施形態><Fourth embodiment>

其次,對本發明之第4實施形態進行說明。圖9係表示第4實施形態之基板冷卻裝置之圖。圖9中對與第1實施形態相同之要素附上相同之符號。第4實施形態之基板冷卻裝置亦係用以將加熱後之基板W一面搬送一面進行冷卻處理之裝置。Next, a fourth embodiment of the present invention will be described. Fig. 9 is a view showing a substrate cooling device according to a fourth embodiment; In FIG. 9, the same elements as those in the first embodiment are denoted by the same reference numerals. The substrate cooling device according to the fourth embodiment is also a device for performing a cooling process while transferring the heated substrate W.

第4實施形態中,未設置排氣箱70,僅藉由氣刀噴嘴80構成氣流形成機構60。即,第4實施形態之基板冷卻裝置中,未於風洞部20設置排氣口71。又,僅於風洞部20之入口側端部附設上下1對通風筒50,並且僅於該入口側之通風筒50附近設置氣刀噴嘴80。至於其他方面,第4實施形態之基板冷卻裝置具有與第1實施形態相同之構成。In the fourth embodiment, the exhaust box 70 is not provided, and the air flow forming mechanism 60 is constituted only by the air knife nozzle 80. In other words, in the substrate cooling device of the fourth embodiment, the exhaust port 71 is not provided in the wind tunnel portion 20. Further, only one pair of upper and lower ventilating cylinders 50 are attached to the inlet side end portion of the wind tunnel portion 20, and the air knife nozzle 80 is provided only in the vicinity of the ventilating cylinder 50 on the inlet side. In other respects, the substrate cooling device according to the fourth embodiment has the same configuration as that of the first embodiment.

第4實施形態之基板冷卻裝置中,藉由不自氣體流路25進行排氣地僅自氣刀噴嘴80向基板搬入口21吹入空氣,而於氣體流路25中形成沿著如圖9所示之基板W之搬送方向之空氣流。即,自入口側之上下1對氣刀噴嘴80吹入至基板搬入口21之空氣,通過入口側之通風筒50之縮徑部55流入風洞部20內,遍及風洞部20之沿著搬送方向之大致全長向(+Y)側流動,並直接自基板搬出口22排出。其結果,如圖9所示,遍及氣體流路25之大致全長而形成自(-Y)側向(+Y)側之單向氣流。由此,第4實施形態中,於基板W沿著氣體流路25搬送時,於與基板W之搬送方向平行且與搬送基板W之方向相同之方向上形成空氣流。In the substrate cooling device of the fourth embodiment, air is blown into the substrate transfer port 21 only from the air knife nozzle 80 without being exhausted from the gas flow path 25, and is formed in the gas flow path 25 along as shown in FIG. The air flow in the direction in which the substrate W is shown is shown. In other words, the air that has been blown into the substrate transfer port 21 by the pair of air knife nozzles 80 from the inlet side flows into the wind tunnel portion 20 through the reduced diameter portion 55 of the ventilator 50 on the inlet side, and along the transport direction of the wind tunnel portion 20 The substantially full length flows toward the (+Y) side and is directly discharged from the substrate discharge port 22. As a result, as shown in FIG. 9, a unidirectional airflow from the (-Y) side (+Y) side is formed over substantially the entire length of the gas flow path 25. As a result, in the fourth embodiment, when the substrate W is transported along the gas flow path 25, an air flow is formed in the same direction as the transport direction of the substrate W in the direction parallel to the transport direction of the substrate W.

因此,與第1實施形態相同,沿著經加熱之基板W之表面而平行地流動空氣流,該空氣流奪去基板W之熱量並自基板搬出口22送出,藉此一面搬送基板W一面進行冷卻。由於在氣體流路25中形成與基板W之搬送方向平行之空氣流,因此基板W之表面與沿著搬送方向之空氣流持續接觸,從而可效率佳地冷卻基板W。又,由於空氣流於形成於風洞部20內側之氣體流路25中流動,因此可防止空氣流擴散而使之持續作用於基板W之表面。而且,藉由氣刀噴嘴80而遍及氣體流路25之寬度方向以均勻流量流動空氣流,因此可以使基板W之面內溫度分佈變得均勻之方式進行冷卻。Therefore, in the same manner as in the first embodiment, the air flow flows in parallel along the surface of the heated substrate W, and the air flow takes away the heat of the substrate W and is sent out from the substrate transfer port 22, thereby carrying the substrate W while transporting the substrate W. cool down. Since the air flow parallel to the conveyance direction of the substrate W is formed in the gas flow path 25, the surface of the substrate W is continuously in contact with the air flow in the conveyance direction, whereby the substrate W can be efficiently cooled. Further, since the air flows through the gas flow path 25 formed inside the wind tunnel portion 20, it is possible to prevent the air flow from diffusing and continuing to act on the surface of the substrate W. Further, since the air flow is performed at a uniform flow rate in the width direction of the gas flow path 25 by the air knife nozzle 80, the temperature distribution in the in-plane of the substrate W can be cooled.

又,於基板搬入口21,自氣刀噴嘴80以沿著所對應之通風筒50之曲面之方式呈簾狀地噴出空氣,因此可獲得與第1實施形態相同之柯安達效應及伯努利効應。其結果,可提高形成於氣體流路25內之空氣流之流速而進一步提高基板W之冷卻效率。此外,可獲得與第1實施形態相同之構成所帶來之相同之效果。Further, in the substrate carrying inlet 21, air is ejected from the air knife nozzle 80 in a curtain shape along the curved surface of the corresponding ventilating cylinder 50, so that the same Coanda effect and Bernoulli as in the first embodiment can be obtained. effect. As a result, the flow velocity of the air flow formed in the gas flow path 25 can be increased, and the cooling efficiency of the substrate W can be further improved. Further, the same effects as those of the configuration of the first embodiment can be obtained.

再者,第4實施形態中,亦可使氣刀噴嘴80之位置與上述相反。即,僅於風洞部20之出口側端部附設上下1對通風筒50,並且僅於該出口側之通風筒50附近設置氣刀噴嘴80。即便如此,亦可於氣體流路25中形成與基板W之搬送方向平行且與搬送基板W之方向相反之方向之空氣流。其結果,可獲得與上述相同之效果。Further, in the fourth embodiment, the position of the air knife nozzle 80 may be reversed from the above. That is, only one pair of upper and lower ventilating cylinders 50 are attached to the outlet side end portion of the wind tunnel portion 20, and the air knife nozzle 80 is provided only in the vicinity of the ventilating cylinder 50 on the outlet side. Even in this case, an air flow in a direction parallel to the conveyance direction of the substrate W and opposite to the direction in which the substrate W is conveyed can be formed in the gas flow path 25. As a result, the same effects as described above can be obtained.

但於如第4實施形態般不設置排氣箱70之情形時,無法於風洞部20之兩端部設置氣刀噴嘴80。其原因在於,若不設置排氣箱70而於風洞部20之兩端部設置氣刀噴嘴80,則不存在空氣流之出口,從而不會於氣體流路25中形成空氣流。即便不設置排氣箱70,只要於風洞部20之任一位置形成與排氣口71相同之開口部,則會由於該開口部向大氣開放,而即便於風洞部20之兩端部未設置氣刀噴嘴80亦可於氣體流路25內形成空氣流,從而可獲得與上述相同之效果。However, when the exhaust box 70 is not provided as in the fourth embodiment, the air knife nozzle 80 cannot be provided at both end portions of the wind tunnel portion 20. This is because if the air knife nozzle 80 is provided at both end portions of the wind tunnel portion 20 without providing the exhaust box 70, there is no outlet for the air flow, and the air flow is not formed in the gas flow path 25. Even if the exhaust box 70 is not provided, if the opening portion similar to the exhaust port 71 is formed at any position of the wind tunnel portion 20, the opening portion is opened to the atmosphere, and the both ends of the wind tunnel portion 20 are not provided. The air knife nozzle 80 can also form an air flow in the gas flow path 25, so that the same effects as described above can be obtained.

<第5實施形態><Fifth Embodiment>

其次,對本發明之第5實施形態進行說明。圖10係表示第5實施形態之基板冷卻裝置之圖。第5實施形態之基板冷卻裝置亦係對加熱後之基板W一面搬送一面進行冷卻處理之裝置。第5實施形態之基板冷卻裝置中,於氣刀噴嘴80設置有離子化器81。至於其他方面,第5實施形態之基板冷卻裝置具有與第1實施形態相同之構成,因此圖10中對與第1實施形態相同之要素附上相同之符號。Next, a fifth embodiment of the present invention will be described. Fig. 10 is a view showing a substrate cooling device according to a fifth embodiment; The substrate cooling device according to the fifth embodiment is also a device that cools the substrate W after heating. In the substrate cooling device of the fifth embodiment, the ionizer 81 is provided in the air knife nozzle 80. In the other aspects, the substrate cooling device of the fifth embodiment has the same configuration as that of the first embodiment. Therefore, the same elements as those of the first embodiment are denoted by the same reference numerals in FIG.

離子化器81藉由電暈放電而產生離子。以離子化器81所產生之離子,與自氣刀噴嘴80噴出之空氣一同吹入至基板搬入口21及基板搬出口22。其結果,於氣體流路25內形成含有離子之空氣流。The ionizer 81 generates ions by corona discharge. The ions generated by the ionizer 81 are blown into the substrate transfer port 21 and the substrate transfer port 22 together with the air ejected from the air knife nozzle 80. As a result, an air flow containing ions is formed in the gas flow path 25.

基板W於基板冷卻裝置內藉由輥搬送機構10之輥11而搬送。又,基板W亦可於基板冷卻裝置之前後藉由輥輸送機之輥19搬送。因此,所搬送之基板W不斷重複與輥11或輥19之接觸‧剝離,有時會於基板W之表面產生因剝離帶電所引起之靜電。該靜電存在成為後續之基板處理之障礙之虞。The substrate W is transported by the roller 11 of the roller transport mechanism 10 in the substrate cooling device. Further, the substrate W may be transferred by the roller 19 of the roller conveyor before and after the substrate cooling device. Therefore, the substrate W to be conveyed repeatedly repeats contact with the roller 11 or the roller 19 and peels off, and static electricity due to peeling electrification may occur on the surface of the substrate W. The presence of this static electricity is a hindrance to subsequent substrate processing.

第5實施形態之基板冷卻裝置中,藉由離子化器81而對基板W之表面供給含有離子之空氣流。由此,因剝離帶電而產生之靜電被該離子中和,從而對基板W之表面進行除電。其結果,可防止後步驟中之因靜電所帶來之妨礙。In the substrate cooling device of the fifth embodiment, an ion-containing air flow is supplied to the surface of the substrate W by the ionizer 81. Thereby, the static electricity generated by the peeling electrification is neutralized by the ions, and the surface of the substrate W is neutralized. As a result, it is possible to prevent the hindrance caused by static electricity in the subsequent steps.

除於氣體流路25中形成含有離子之空氣流之方面以外,第5實施形態之基板冷卻裝置與第1實施形態相同,因此可獲得與第1實施形態相同之效果。即,由於沿著經加熱之基板W之表面而平行地形成空氣流,因此該空氣流奪去基板W之熱量並自排氣口71送出,藉此可對基板W一面搬送一面進行冷卻。由於氣體流路25中形成有與基板W之搬送方向平行之空氣流,故而基板W之表面與沿著搬送方向之空氣流持續接觸,從而可效率佳地冷卻基板W。又,由於空氣流於形成於風洞部20內側之氣體流路25中流動,因此可防止空氣流擴散而使之持續作用於基板W之表面。而且,藉由排氣箱70而遍及氣體流路25之寬度方向以均勻流量流動空氣流,因此可以使基板W之面內溫度分佈變得均勻之方式冷卻基板W。The substrate cooling device according to the fifth embodiment is the same as that of the first embodiment except for the fact that the air flow including the ions is formed in the gas flow path 25. Therefore, the same effects as those of the first embodiment can be obtained. That is, since the air flow is formed in parallel along the surface of the heated substrate W, the air flow takes away the heat of the substrate W and is sent out from the exhaust port 71, whereby the substrate W can be cooled while being transported. Since the air flow is formed in the gas flow path 25 in parallel with the transport direction of the substrate W, the surface of the substrate W is continuously in contact with the air flow in the transport direction, whereby the substrate W can be efficiently cooled. Further, since the air flows through the gas flow path 25 formed inside the wind tunnel portion 20, it is possible to prevent the air flow from diffusing and continuing to act on the surface of the substrate W. Further, since the air flow is performed at a uniform flow rate in the width direction of the gas flow path 25 by the exhaust box 70, the substrate W can be cooled so that the in-plane temperature distribution of the substrate W becomes uniform.

<第6實施形態><Sixth embodiment>

其次,對本發明之第6實施形態進行說明。圖11係表示第6實施形態之基板冷卻裝置之圖。圖11中對與第1實施形態相同之要素附上相同之符號。第6實施形態之基板冷卻裝置亦係對加熱後之基板W一面搬送一面進行冷卻處理之裝置。Next, a sixth embodiment of the present invention will be described. Fig. 11 is a view showing a substrate cooling device according to a sixth embodiment. In FIG. 11, the same elements as those in the first embodiment are denoted by the same reference numerals. The substrate cooling device according to the sixth embodiment is also a device that cools the substrate W after heating.

第1實施形態至第5實施形態中,以包圍基板W之搬送通路之周圍之方式設置風洞部20,且於該風洞部20之內側形成有氣體流路25,但第6實施形態中,於基板W之搬送通路之上方配置蓋體120,且蓋體120覆蓋由輥搬送機構10所搬送之基板W之表面,藉此於該基板W之表面與蓋體120之間形成有兩端部開放之氣體流路125。In the first embodiment to the fifth embodiment, the wind tunnel portion 20 is provided so as to surround the periphery of the transport path of the substrate W, and the gas flow path 25 is formed inside the wind tunnel portion 20. However, in the sixth embodiment, The lid body 120 is disposed above the transfer path of the substrate W, and the lid body 120 covers the surface of the substrate W conveyed by the roll transport mechanism 10, whereby both ends are formed between the surface of the substrate W and the lid body 120. The gas flow path 125.

蓋體120僅與第1實施形態之風洞部20之頂部之構成大致相同。即,於蓋體120之搬送方向之中央部設置有複數個排氣口,並且對應於該些排氣口而設置有複數個排氣箱70。可藉由複數個排氣箱70自排氣口排出氣體流路125內之環境氣體。又,於蓋體120之內壁面,與基板W之搬送方向平行地延伸設置有複數個整流扇。The lid body 120 is substantially the same as the configuration of the top portion of the wind tunnel portion 20 of the first embodiment. That is, a plurality of exhaust ports are provided at the center of the conveying direction of the lid body 120, and a plurality of exhaust boxes 70 are provided corresponding to the exhaust ports. The ambient gas in the gas flow path 125 can be exhausted from the exhaust port by a plurality of exhaust boxes 70. Further, a plurality of rectifying fans are extended on the inner wall surface of the lid body 120 in parallel with the conveying direction of the substrate W.

於蓋體120之兩端部附設有通風筒50。第6實施形態中,於蓋體120之兩端部各自之上側設置有1個通風筒50。又,於通風筒50附近設置有氣刀噴嘴80。氣刀噴嘴80於蓋體120之兩端部分別設置較於基板W之搬送通路更靠上方處。A ventilating cylinder 50 is attached to both ends of the cover 120. In the sixth embodiment, one ventilator 50 is provided on each of both end portions of the lid body 120. Further, an air knife nozzle 80 is provided in the vicinity of the ventilator 50. The air knife nozzle 80 is disposed above the transport path of the substrate W at both ends of the cover 120, respectively.

第6實施形態中,加熱後之基板W藉由輥搬送機構10而自(-Y)側向(+Y)側搬送。而且,於蓋體120之下方被搬送之基板W覆蓋時形成氣體流路125,該狀態下,利用排氣箱70自氣體流路125進行排氣及利用氣刀噴嘴80向氣體流路125吹入空氣。In the sixth embodiment, the heated substrate W is transported from the (-Y) side (+Y) side by the roller transport mechanism 10. Further, when the substrate W that is transported under the lid body 120 is covered, the gas flow path 125 is formed. In this state, the gas is exhausted from the gas flow path 125 by the exhaust box 70, and is blown to the gas flow path 125 by the air knife nozzle 80. Into the air.

藉由自氣體流路125之中央部進行排氣,並且自兩端部吹入空氣,而於氣體流路125中形成如圖11所示之沿著基板W之搬送方向之空氣流。即,自入口側及出口側之氣刀噴嘴80吹入之空氣分別於氣體流路125內向(+Y)側及(-Y)側流動,並自形成於蓋體120之中央部之排氣口向排氣箱70排氣。其結果,如圖11所示,於沿著基板W之搬送方向之氣體流路125之較中央部更靠上游側,形成自(-Y)側向(+Y)側之氣流,反之於較中央部更靠下游側,形成自(+Y)側向(-Y)側之氣流。任一情形時,均可與基板W之搬送方向平行地流動空氣流。The air is exhausted from the central portion of the gas flow path 125, and air is blown from both end portions, and an air flow along the transport direction of the substrate W as shown in FIG. 11 is formed in the gas flow path 125. In other words, the air blown from the air knife nozzles 80 on the inlet side and the outlet side flows toward the (+Y) side and the (-Y) side in the gas flow path 125, and is exhausted from the center portion of the lid body 120. The port exhausts to the exhaust box 70. As a result, as shown in FIG. 11, the air flow from the (-Y) side (+Y) side is formed on the upstream side of the gas flow path 125 along the transport direction of the substrate W, and vice versa. The central portion is further downstream, forming a gas flow from the (+Y) lateral (-Y) side. In either case, the air flow can flow in parallel with the transport direction of the substrate W.

因此,沿著經加熱之基板W之表面而平行地流動空氣流,該空氣流奪去基板W之熱量並自排氣口送出,藉此對基板W一面搬送一面進行冷卻。於氣體流路125中形成有與基板W之搬送方向平行之空氣流,因此基板W之表面與沿著搬送方向之空氣流持續接觸,從而可效率佳地冷卻基板W。又,於形成於蓋體120與基板W之表面之間之氣體流路125中流動空氣流,因此可防止空氣流擴散而使之持續作用於基板W之表面。而且,由於藉由排氣箱70及氣刀噴嘴80而遍及氣體流路125之寬度方向以均勻流量流動空氣流,因此可以使基板W之面內溫度分佈變得均勻之方式冷卻基板W。Therefore, an air flow flows in parallel along the surface of the heated substrate W, and the air flow takes away the heat of the substrate W and is sent out from the exhaust port, thereby cooling the substrate W while being transported. Since the air flow parallel to the conveyance direction of the substrate W is formed in the gas flow path 125, the surface of the substrate W is continuously in contact with the air flow in the conveyance direction, whereby the substrate W can be efficiently cooled. Further, since the air flow flows in the gas flow path 125 formed between the lid body 120 and the surface of the substrate W, it is possible to prevent the air flow from diffusing and continuing to act on the surface of the substrate W. Further, since the air flow is performed at a uniform flow rate in the width direction of the gas flow path 125 by the exhaust box 70 and the air knife nozzle 80, the substrate W can be cooled so that the in-plane temperature distribution of the substrate W becomes uniform.

又,於蓋體120之內壁面上與搬送方向平行地延伸設置有整流扇23,因此可將氣體流路125中之空氣流整流為直線性地流動。藉此,可對沿著氣體流路125搬送之基板W之表面均勻地供給空氣流,從而可更均勻地冷卻基板W。Further, since the rectifying fan 23 is extended in parallel with the conveying direction on the inner wall surface of the lid body 120, the air flow in the gas flow path 125 can be rectified to flow linearly. Thereby, the air flow can be uniformly supplied to the surface of the substrate W conveyed along the gas flow path 125, whereby the substrate W can be more uniformly cooled.

又,於蓋體120之兩端部分別附設通風筒50,並且對應於兩側之通風筒50而分別設置氣刀噴嘴80。而且,自氣刀噴嘴80以沿著對應之通風筒50之曲面之方式呈簾狀地噴出空氣,因此可獲得與第1實施形態相同之柯安達效應及伯努利効應。其結果,可提高形成於氣體流路125內之空氣流之流速而進一步提高基板W之冷卻效率。Further, ventilating cylinders 50 are respectively attached to both end portions of the lid body 120, and air knife nozzles 80 are respectively provided corresponding to the ventilating cylinders 50 on both sides. Further, since the air knife nozzle 80 ejects air in a curtain shape along the curved surface of the corresponding ventilating cylinder 50, the same Coanda effect and Bernoulli effect as in the first embodiment can be obtained. As a result, the flow velocity of the air flow formed in the gas flow path 125 can be increased, and the cooling efficiency of the substrate W can be further improved.

<變形例><Modification>

以上,對本發明之實施形態進行了說明,但本發明可於不脫離其主旨之範圍內進行上述內容以外之各種變更。例如,上述各實施形態中,設為藉由輥搬送機構10而沿Y方向搬送基板W,但基板W之搬送方式並不限定於輥搬送,只要為沿著一方向搬送之機構即可。例如,可採用將基板W載置於皮帶上進行搬送之皮帶搬送機構,亦可採用自基板W下方噴出壓縮空氣而使基板W一面浮起一面加以搬送之浮起搬送機構。The embodiments of the present invention have been described above, but the present invention can be variously modified without departing from the spirit and scope of the invention. For example, in the above-described embodiments, the substrate W is transported in the Y direction by the roller transport mechanism 10, but the transport method of the substrate W is not limited to the roller transport, and may be a mechanism that transports in one direction. For example, a belt transport mechanism that transports the substrate W on a belt for transport can be used, or a float transport mechanism that discharges compressed air from below the substrate W and floats the substrate W while being transported can be used.

又,上述各實施形態中,係於風洞部20(或蓋體120)設置複數個排氣口71及與其等對應之複數個排氣箱70,且在複數個排氣箱70個別地設置流量調整閥73而可調整排氣平衡,但亦可為藉由其他構造遍及氣體流路25(125)之寬度方向而以均勻流量進行排氣。例如,可使用歧管或集管,亦可設置遍及風洞部20(或蓋體120)之寬度方向延伸之狹縫狀之排氣口。Further, in each of the above embodiments, a plurality of exhaust ports 71 and a plurality of exhaust boxes 70 corresponding thereto are provided in the wind tunnel portion 20 (or the lid body 120), and flow rates are individually set in the plurality of exhaust boxes 70. The exhaust valve balance can be adjusted by adjusting the valve 73, but it is also possible to exhaust at a uniform flow rate through the width direction of the gas flow path 25 (125) by other structures. For example, a manifold or a header may be used, or a slit-shaped exhaust port extending in the width direction of the wind tunnel portion 20 (or the lid body 120) may be provided.

又,亦可代替鼓風機75,而利用設置有基板冷卻裝置之工廠之設施排氣、噴射器或排氣泵等。Further, instead of the blower 75, a facility exhaust, an ejector, an exhaust pump, or the like of a factory provided with a substrate cooling device may be used.

又,亦可代替整流扇23,而使用可將空氣流整流為沿著搬送方向呈直線性地流動之其他機構。例如,亦可使用沿著搬送方向延伸之重複配置有凹狀槽與凸狀部之凹凸構造等。Further, instead of the rectifying fan 23, another mechanism that can rectify the air flow to linearly flow along the conveying direction can be used. For example, a concave-convex structure in which a concave groove and a convex portion are repeatedly arranged in the transport direction may be used.

又,亦可將較風洞部20之頂部與底部之間之間隔窄之縮徑部,設置於通風筒構造以外之風洞部20之內部(即,基板搬入口21及基板搬出口22以外之區域)。Further, the reduced diameter portion which is narrower than the interval between the top and the bottom of the wind tunnel portion 20 may be provided inside the wind tunnel portion 20 other than the ventilating cylinder structure (that is, the region other than the substrate carrying inlet 21 and the substrate carrying port 22). ).

又,上述各實施形態中,經由通風筒50自氣刀噴嘴80向氣體流路25(125)吹入空氣,但亦可不設置通風筒50而自氣刀噴嘴80直接向氣體流路25(125)吹入空氣。當然,使用通風筒50者可藉由柯安達效應及伯努利効應而將更多量之空氣效率佳地送入氣體流路25(125)。Further, in each of the above embodiments, air is blown into the gas flow path 25 (125) from the air knife nozzle 80 via the ventilator 50, but the lance cylinder 50 may be directly supplied from the air knife nozzle 80 to the gas flow path 25 (125). ) Blow in the air. Of course, the use of the ventilator 50 allows a greater amount of air to be efficiently delivered to the gas flow path 25 (125) by the Coanda effect and the Bernoulli effect.

又,亦可代替第6實施形態中於基板W之搬送通路之上方配置蓋體120,而於搬送通路之下方配置蓋體120。該情形時,蓋體120僅與第1實施形態之風洞部20之底部之構成大致相同。總而言之,只要為藉由蓋體120覆蓋由輥搬送機構10所搬送之基板W之表面(上面或下面),而於與該基板W之表面之間形成兩端部開放之氣體流路125者即可。Moreover, instead of arranging the lid body 120 above the conveyance path of the substrate W in the sixth embodiment, the lid body 120 may be disposed below the conveyance path. In this case, the lid body 120 is substantially the same as the bottom portion of the wind tunnel portion 20 of the first embodiment. In short, as long as the surface (upper or lower surface) of the substrate W transported by the roller transport mechanism 10 is covered by the lid 120, a gas flow path 125 having open ends is formed between the surface of the substrate W and the surface of the substrate W. can.

又,亦可對第6實施形態之基板冷卻裝置進行與第1實施形態至第5實施形態之主旨相同之變更。即,亦可僅藉由來自排氣箱70之排氣或來自氣刀噴嘴80之空氣之吹入而於氣體流路125中形成空氣流。又,亦可不於蓋體120之中央部而於出口側端部或入口側端部設置排氣箱70,並於其相反側設置氣刀噴嘴80。進而,亦可於氣刀噴嘴80設置離子化器81,於氣體流路125中形成含有離子之空氣流。Further, the substrate cooling device according to the sixth embodiment can be modified in the same manner as the first embodiment to the fifth embodiment. That is, the air flow may be formed in the gas flow path 125 only by the exhaust from the exhaust box 70 or the air from the air knife nozzle 80. Further, the exhaust box 70 may be provided at the outlet side end portion or the inlet side end portion without the center portion of the lid body 120, and the air knife nozzle 80 may be provided on the opposite side. Further, the ionizer 81 may be provided in the air knife nozzle 80, and an air flow containing ions may be formed in the gas flow path 125.

又,可根據冷卻處理之目標溫度而將風洞部20(或蓋體120)之搬送方向之長度設為任意值,但亦可根據需要而設置複數段之本發明之基板冷卻裝置1,呈階段性地對基板W進行冷卻。Further, the length of the wind tunnel portion 20 (or the lid body 120) in the transport direction may be set to an arbitrary value depending on the target temperature of the cooling process. However, the substrate cooling device 1 of the present invention may be provided in a plurality of stages as needed. The substrate W is cooled.

又,上述各實施形態中,以對加熱後之矩形之液晶顯示裝置用玻璃基板進行冷卻處理為例進行了說明,但成為本發明之基板冷卻裝置之處理對象之基板W並不限定於此,亦可為例如PDP用玻璃基板、半導體晶圓、記錄碟片用基板及太陽電池用基板等。又,本發明之技術亦可應用於對連續性地形成為片狀之基板一面搬送一面進行冷卻之裝置。In the above-described embodiments, the glass substrate for a liquid crystal display device having a rectangular shape after heating is subjected to a cooling treatment as an example. However, the substrate W to be processed by the substrate cooling device of the present invention is not limited thereto. For example, a glass substrate for a PDP, a semiconductor wafer, a substrate for a recording disk, a substrate for a solar cell, or the like can be used. Further, the technique of the present invention can also be applied to a device for cooling a substrate which is continuously formed into a sheet shape while being conveyed.

1...基板冷卻裝置1. . . Substrate cooling device

10...輥搬送機構10. . . Roll conveying mechanism

11、19...輥11, 19. . . Roll

20...風洞部20. . . Wind tunnel

21...基板搬入口twenty one. . . Substrate transfer

22...基板搬出口twenty two. . . Substrate outlet

23...整流扇twenty three. . . Rectifier fan

25、125...氣體流路25, 125. . . Gas flow path

31...開口部31. . . Opening

35...圍罩35. . . Enclosure

50...通風筒50. . . Ventilation tube

55...縮徑部55. . . Reduced diameter

60...氣流形成機構60. . . Air flow forming mechanism

70...排氣箱70. . . Exhaust box

71...排氣口71. . . exhaust vent

72...排氣閥72. . . Vent

73...流量調整閥73. . . Flow regulating valve

74...排氣配管74. . . Exhaust piping

75...鼓風機75. . . Blower

80...氣刀噴嘴80. . . Air knife nozzle

81...離子化器81. . . Ionizer

120...蓋體120. . . Cover

W...基板W. . . Substrate

AR...空氣噴出方向AR. . . Air ejection direction

d1...下側通風筒之縮徑部與基板之搬送通路之間隔D1. . . The distance between the reduced diameter portion of the lower ventilating cylinder and the transport path of the substrate

d2...上側通風筒之縮徑部與搬送通路之間隔D2. . . The distance between the reduced diameter portion of the upper ventilating cylinder and the transport path

圖1係表示本發明之第1實施形態之基板冷卻裝置之要部構成之側視圖;1 is a side view showing a configuration of a main part of a substrate cooling device according to a first embodiment of the present invention;

圖2係自下側觀察風洞部之頂部之圖;Figure 2 is a view of the top of the wind tunnel from the lower side;

圖3係自上側觀察風洞部之底部之圖;Figure 3 is a view of the bottom of the wind tunnel from the upper side;

圖4係自圖1之A-A剖面觀察風洞部之圖;Figure 4 is a view of the wind tunnel from the A-A section of Figure 1;

圖5係用以說明氣體流路中所形成之空氣流之圖;Figure 5 is a view for explaining the flow of air formed in the gas flow path;

圖6係表示通風筒及氣刀噴嘴之周邊之圖;Figure 6 is a view showing the periphery of the ventilator and the air knife nozzle;

圖7係表示第2實施形態之基板冷卻裝置之圖;Figure 7 is a view showing a substrate cooling device according to a second embodiment;

圖8係表示第3實施形態之基板冷卻裝置之圖;Figure 8 is a view showing a substrate cooling device according to a third embodiment;

圖9係表示第4實施形態之基板冷卻裝置之圖;Figure 9 is a view showing a substrate cooling device according to a fourth embodiment;

圖10係表示第5實施形態之基板冷卻裝置之圖;及Figure 10 is a view showing a substrate cooling device according to a fifth embodiment; and

圖11係表示第6實施形態之基板冷卻裝置之圖。Fig. 11 is a view showing a substrate cooling device according to a sixth embodiment.

1...基板冷卻裝置1. . . Substrate cooling device

10...輥搬送機構10. . . Roll conveying mechanism

11、19...輥11, 19. . . Roll

20...風洞部20. . . Wind tunnel

21...基板搬入口twenty one. . . Substrate transfer

22...基板搬出口twenty two. . . Substrate outlet

25...氣體流路25. . . Gas flow path

35...圍罩35. . . Enclosure

50...通風筒50. . . Ventilation tube

55...縮徑部55. . . Reduced diameter

60...氣流形成機構60. . . Air flow forming mechanism

70...排氣箱70. . . Exhaust box

80...氣刀噴嘴80. . . Air knife nozzle

W...基板W. . . Substrate

Claims (12)

一種基板冷卻裝置,其特徵在於:其係對加熱後之基板進行冷卻處理者,包括:搬送機構,其於特定之方向搬送基板;風洞部,其於上述搬送機構之基板之搬送路徑之周圍形成兩端部開放之氣體流路;及氣流形成機構,其於上述氣體流路中沿著基板之搬送方向形成氣流,其中於上述風洞部附設有將氣體引導向上述氣體流路之兩端部之至少一方之通風筒。 A substrate cooling device characterized in that a substrate for cooling a heated substrate includes a transfer mechanism that transports a substrate in a specific direction, and a wind tunnel portion that is formed around a transfer path of the substrate of the transfer mechanism. a gas flow path in which both end portions are open; and an air flow forming mechanism that forms an air flow in the gas flow path along the transport direction of the substrate, wherein the wind tunnel portion is provided with gas guiding to both end portions of the gas flow path a ventilator of at least one of the parties. 一種基板冷卻裝置,其特徵在於:其係對加熱後之基板進行冷卻處理者,包括:搬送機構,其於特定之方向搬送基板;風洞部,其於上述搬送機構之基板之搬送路徑之周圍形成兩端部開放之氣體流路;及氣流形成機構,其於上述氣體流路中沿著基板之搬送方向形成氣流,其中於上述風洞部形成與上述氣體流路連通之排氣口;上述氣流形成機構具有將上述氣體流路內之環境氣體自上述排氣口排出之排氣機構,且上述排氣口形成於上述風洞部之上述搬送方向上之中央部。 A substrate cooling device characterized in that a substrate for cooling a heated substrate includes a transfer mechanism that transports a substrate in a specific direction, and a wind tunnel portion that is formed around a transfer path of the substrate of the transfer mechanism. a gas flow path that is open at both ends; and an air flow forming mechanism that forms an air flow in the gas flow path along a transport direction of the substrate, wherein an exhaust port that communicates with the gas flow path is formed in the wind tunnel portion; The mechanism has an exhaust mechanism that discharges the ambient gas in the gas flow path from the exhaust port, and the exhaust port is formed in a central portion of the wind tunnel portion in the transport direction. 如請求項2之基板冷卻裝置,其中上述氣流形成機構包括氣體噴出機構,其向上述氣體流路之兩端部之至少一方 吹入氣體。 The substrate cooling device according to claim 2, wherein the airflow forming means includes a gas ejecting mechanism that faces at least one of both end portions of the gas flow path Blow in the gas. 如請求項3之基板冷卻裝置,其中上述氣體噴出機構包括離子化器,其產生離子並使之與氣體一同吹入上述氣體流路之兩端部之至少一方。 The substrate cooling device according to claim 3, wherein the gas ejecting mechanism includes an ionizer that generates ions and blows them together with the gas into at least one of both end portions of the gas flow path. 如請求項2或3之基板冷卻裝置,其中上述風洞部附設有將氣體引導向上述氣體流路之兩端部之至少一方之通風筒。 The substrate cooling device according to claim 2 or 3, wherein the wind tunnel portion is provided with a ventilating cylinder that guides gas to at least one of both end portions of the gas flow path. 如請求項1之基板冷卻裝置,其中上述通風筒設置於上述搬送路徑之上下方;於上述設置於上下方之通風筒中設置有雙方之間隔最窄之縮徑部;下側通風筒之縮徑部與上述搬送通路之間隔係小於上側通風筒之縮徑部與上述搬送通路之間隔。 The substrate cooling device of claim 1, wherein the ventilating cylinder is disposed above and below the transport path; and the ventilating cylinder disposed at the upper and lower sides is provided with a narrowed portion having the narrowest interval between the two; and a reduced diameter of the lower ventilating cylinder The interval between the portion and the transport path is smaller than the interval between the reduced diameter portion of the upper ventilator and the transport path. 一種基板冷卻裝置,其特徵在於:其係對加熱後之基板進行冷卻處理者,包括:搬送機構,其於特定之方向搬送基板;風洞部,其於上述搬送機構之基板之搬送路徑之周圍形成兩端部開放之氣體流路;及氣流形成機構,其於上述氣體流路中沿著基板之搬送方向形成氣流,其中於上述風洞部之內壁面上與上述搬送方向平行地延伸設置有整流扇。 A substrate cooling device characterized in that a substrate for cooling a heated substrate includes a transfer mechanism that transports a substrate in a specific direction, and a wind tunnel portion that is formed around a transfer path of the substrate of the transfer mechanism. a gas flow path that is open at both ends; and an air flow forming mechanism that forms an air flow in the gas flow path along a direction in which the substrate is transported, wherein a rectifying fan extends in parallel with the transport direction on an inner wall surface of the wind tunnel portion . 一種基板冷卻裝置,其特徵在於:其係對加熱後之基板進行冷卻處理者,包括: 搬送機構,其於特定之方向搬送基板;風洞部,其於上述搬送機構之基板之搬送路徑之周圍形成兩端部開放之氣體流路;及氣流形成機構,其於上述氣體流路中沿著基板之搬送方向形成氣流,其中上述搬送機構係藉由一部分自設置於上述風洞部之底面之開口部突出之輥而搬送基板;於上述風洞部之上述底面之外壁進而設置有覆蓋上述輥之較上述底面更靠下方之全體之圍罩。 A substrate cooling device characterized in that it cools a heated substrate, including: a transport mechanism that transports the substrate in a specific direction; the wind tunnel portion forms a gas flow path in which both end portions are open around the transfer path of the substrate of the transfer mechanism; and an air flow forming mechanism that is along the gas flow path The conveying mechanism forms an air flow in the conveying direction of the substrate, wherein the conveying mechanism conveys the substrate by a portion of the roller protruding from the opening of the bottom surface of the wind tunnel portion; and the outer wall of the bottom surface of the wind tunnel portion is further provided with a cover for the roller The entire bottom surface of the bottom surface is lower. 一種基板冷卻裝置,其特徵在於:其係對加熱後之基板進行冷卻處理者,包括:搬送機構,其於特定之方向搬送基板;蓋體,其藉由覆蓋由上述搬送機構所搬送之基板之表面,而於與該基板之表面之間形成兩端部開放之氣體流路;及氣流形成機構,其於上述氣體流路中沿著基板之搬送方向而形成氣流,其中上述氣流形成機構包括氣體噴出機構,其向上述氣體流路之兩端部之至少一方吹入氣體,且上述氣體噴出機構包括離子化器,其產生離子並使之與氣體一同吹入上述氣體流路之兩端部之至少一方。 A substrate cooling device characterized in that a substrate for cooling a heated substrate includes: a transfer mechanism that transports the substrate in a specific direction; and a cover body that covers the substrate transported by the transfer mechanism a gas flow path formed at both ends between the surface and the surface of the substrate; and an air flow forming mechanism for forming an air flow in the gas flow path along a transport direction of the substrate, wherein the gas flow forming mechanism includes a gas a discharge mechanism that blows gas into at least one of both end portions of the gas flow path, and the gas discharge mechanism includes an ionizer that generates ions and blows them together with the gas into both end portions of the gas flow path At least one party. 如請求項9之基板冷卻裝置,其中於上述蓋體形成與上述氣體流路連通之排氣口;上述氣流形成機構包括將上述氣體流路內之環境氣體 自上述排氣口排出之排氣機構。 The substrate cooling device of claim 9, wherein the cover body forms an exhaust port communicating with the gas flow path; and the air flow forming mechanism includes an ambient gas in the gas flow path An exhaust mechanism that is discharged from the above exhaust port. 一種基板冷卻裝置,其特徵在於:其係對加熱後之基板進行冷卻處理者,包括:搬送機構,其於特定之方向搬送基板;蓋體,其藉由覆蓋由上述搬送機構所搬送之基板之表面,而於與該基板之表面之間形成兩端部開放之氣體流路;及氣流形成機構,其於上述氣體流路中沿著基板之搬送方向而形成氣流,其中上述蓋體附設有將氣體導引向上述氣體流路之兩端部之至少一方之通風筒。 A substrate cooling device characterized in that a substrate for cooling a heated substrate includes: a transfer mechanism that transports the substrate in a specific direction; and a cover body that covers the substrate transported by the transfer mechanism a gas flow path formed at both ends between the surface and the surface of the substrate; and an air flow forming mechanism for forming an air flow in the gas flow path along the transport direction of the substrate, wherein the cover body is attached The gas guides the ventilating cylinder to at least one of both end portions of the gas flow path. 一種基板冷卻裝置,其特徵在於:其係對加熱後之基板進行冷卻處理者,包括:搬送機構,其於特定之方向搬送基板;蓋體,其藉由覆蓋由上述搬送機構所搬送之基板之表面,而於與該基板之表面之間形成兩端部開放之氣體流路;及氣流形成機構,其於上述氣體流路中沿著基板之搬送方向而形成氣流,其中於上述蓋體之內壁面上與上述搬送方向平行地延伸設置有整流扇。 A substrate cooling device characterized in that a substrate for cooling a heated substrate includes: a transfer mechanism that transports the substrate in a specific direction; and a cover body that covers the substrate transported by the transfer mechanism a gas flow path formed at both ends between the surface and the surface of the substrate; and an air flow forming mechanism for forming an air flow in the gas flow path along the transport direction of the substrate, wherein the gas is inside the cover A rectifying fan is extended on the wall surface in parallel with the above-described conveying direction.
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JP5029535B2 (en) * 2007-10-12 2012-09-19 東京エレクトロン株式会社 Heat treatment apparatus, heat treatment method and storage medium

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