JPH1197597A - Cooling apparatus for semiconductor circuit - Google Patents
Cooling apparatus for semiconductor circuitInfo
- Publication number
- JPH1197597A JPH1197597A JP27038897A JP27038897A JPH1197597A JP H1197597 A JPH1197597 A JP H1197597A JP 27038897 A JP27038897 A JP 27038897A JP 27038897 A JP27038897 A JP 27038897A JP H1197597 A JPH1197597 A JP H1197597A
- Authority
- JP
- Japan
- Prior art keywords
- semiconductor circuit
- porous honeycomb
- honeycomb member
- cooling device
- porous
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Cooling Or The Like Of Electrical Apparatus (AREA)
- Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
Abstract
Description
【発明の詳細な説明】DETAILED DESCRIPTION OF THE INVENTION
【0001】[0001]
【発明の属する技術分野】この発明は,基板に取り付け
られたトランジスタ及び回路素子を含む電子部品を前記
基板を通じて冷却する半導体回路の冷却装置に関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a semiconductor circuit cooling apparatus for cooling electronic components including transistors and circuit elements mounted on a substrate through the substrate.
【0002】[0002]
【従来の技術】従来,半導体回路において,大電流を制
御してサインカーブ等にする高出力インバータでは,大
抵の場合,大型サイリスタ又はパワートランジスタが用
いられている。このような半導体回路では,サイリスタ
やトランジスタ等での熱損失が大きく,作動中に発熱に
よってサイリスタやトランジスタ等の電子部品の機能が
劣化することが度々発生する。そこで,半導体回路での
作動中の発熱を阻止するため,半導体回路を冷却する種
々の冷却装置が知られている。インバータは,直流を交
流に変換したり,電圧と周波数を変換させて速度等を調
節するものであり,例えば,周波数を10〜600サイ
クルに変換できるが,インバータで周波数を変換して,
回転数を変換できる。2. Description of the Related Art Conventionally, in a semiconductor circuit, a large-sized thyristor or a power transistor is generally used in a high-output inverter for controlling a large current to produce a sine curve or the like. In such a semiconductor circuit, heat loss in the thyristor and the transistor is large, and the function of electronic components such as the thyristor and the transistor often deteriorates due to heat generation during operation. Therefore, various cooling devices for cooling the semiconductor circuit in order to prevent heat generation during operation in the semiconductor circuit are known. Inverters convert DC to AC or convert voltage and frequency to adjust the speed and the like. For example, the frequency can be converted to 10 to 600 cycles.
The number of rotations can be converted.
【0003】[0003]
【発明が解決しようとする課題】しかしながら,インバ
ータの作動によって周波数を切り換えるとき,熱が発生
し,その熱が半導体の特性を劣化させるので,半導体回
路には冷却装置が設けられている。従来の冷却装置は,
半導体回路を冷却するため,大きなファンを持った極め
て冷却効率の悪いフィン型構造であり,大型構造のもの
である。半導体回路から成る制御装置等の小型の機器で
は,アルミニウム製の大型の冷却フィンを用いることが
できず,該冷却フィンを用いた場合には制御機器を小型
に構成できない。そこで,半導体回路の冷却装置につい
て,冷却性能が良く,コンパクトな構造の冷却装置が望
まれているのが現状である。However, when the frequency is switched by the operation of the inverter, heat is generated, and the heat deteriorates the characteristics of the semiconductor. Therefore, the semiconductor circuit is provided with a cooling device. Conventional cooling devices
It has a fin-type structure with a large fan and extremely low cooling efficiency for cooling semiconductor circuits, and has a large structure. In a small device such as a control device including a semiconductor circuit, a large-sized cooling fin made of aluminum cannot be used, and when the cooling fin is used, the control device cannot be configured in a small size. Therefore, at present, there is a demand for a cooling device having a good cooling performance and a compact structure.
【0004】ところで,セラミックスの中でも,炭化ケ
イ素(SiC)や窒化アルミニウム(AlN)は,熱伝
導率が大きいことが知られている。これらのセラミック
ス材料を用いて,多孔質ハニカム部材を作製することは
できる。Incidentally, among ceramics, silicon carbide (SiC) and aluminum nitride (AlN) are known to have high thermal conductivity. A porous honeycomb member can be manufactured using these ceramic materials.
【0005】[0005]
【課題を解決するための手段】この発明の目的は,熱伝
導率が大きいSiCやAlNのセラミックスを多孔質ハ
ニカム部材に形成し,該多孔質ハニカム部材に冷却空気
を通すことによって多孔質ハニカム部材自体から熱を奪
うという特性を利用するものであり,前記多孔質ハニカ
ム部材によって冷却装置自体をコンパクトに構成し,多
孔質ハニカム部材に固定されたパワートランジスタ,サ
イリスタ,プリント回路等の電子部品を前記多孔質ハニ
カム部材を通過する冷却空気によって空冷し,熱影響に
よる各種の電子部品の劣化を防止することができる半導
体回路の冷却装置を提供することである。SUMMARY OF THE INVENTION An object of the present invention is to form a porous honeycomb member by forming ceramics having a high thermal conductivity, such as SiC or AlN, on the porous honeycomb member and passing cooling air through the porous honeycomb member. The cooling device itself is made compact by the porous honeycomb member, and electronic components such as a power transistor, a thyristor, and a printed circuit fixed to the porous honeycomb member are used. An object of the present invention is to provide a cooling device for a semiconductor circuit that can be air-cooled by cooling air passing through a porous honeycomb member and can prevent deterioration of various electronic components due to heat.
【0006】この発明は,少なくともトランジスタを含
む電子部品を取り付けた非導電性のセラミックスから成
る基板を備えた半導体回路において,前記電子部品を取
り付けた前記基板の取付面とは反対側の背面に固着され
た樹脂部材を介して前記基板に取り付けられ且つ空気通
路を有する熱伝導率が大きいセラミックスから成る多孔
質ハニカム部材,前記多孔質ハニカム部材に流す空気の
入口と出口を残して前記多孔質ハニカム部材を覆うケー
シング,及び前記多孔質ハニカム部材内に前記入口から
前記出口に向かって冷却のため空気流を形成するファ
ン,及び前記ファンを駆動する小型モータ,から成るこ
とを特徴とする半導体回路の冷却装置に関する。According to the present invention, in a semiconductor circuit having a substrate made of non-conductive ceramics on which electronic components including at least transistors are mounted, the semiconductor circuit is fixed to a back surface opposite to a mounting surface of the substrate on which the electronic components are mounted. A porous honeycomb member made of ceramics having a high thermal conductivity and having an air passage, attached to the substrate via the provided resin member, and the porous honeycomb member leaving an inlet and an outlet for air flowing through the porous honeycomb member. And a fan for forming an air flow for cooling from the inlet to the outlet in the porous honeycomb member, and a small motor for driving the fan. Related to the device.
【0007】前記基板に前記多孔質ハニカム部材を取り
付けのために用いた前記樹脂部材には,熱伝導率の高い
材料粉が混入されている。前記材料粉は,例えば,金属
粉,AlN,SiC粉である。前記樹脂部材は,熱伝導
率がアップされ,しかも前記樹脂部材は,前記基板及び
前記多孔質ハニカム部材のハニカムの気孔に入り込んで
両者に強力に接合する。The resin member used for attaching the porous honeycomb member to the substrate contains a material powder having a high thermal conductivity. The material powder is, for example, metal powder, AlN, or SiC powder. The thermal conductivity of the resin member is increased, and the resin member enters the pores of the honeycomb of the substrate and the porous honeycomb member and is strongly joined to both.
【0008】前記多孔質ハニカム部材は,複数段の構造
に形成してその端部が交互に閉鎖端部に形成されてい
る。即ち,前記多孔質ハニカム部材は,そのハニカム構
造体の入口部と出口部とのいずれか一端部が閉鎖端部に
且つ他端部が開放端部に形成され,前記入口部と前記出
口部との隣接する端部が交互に閉鎖端部と開口端部とに
形成されている。従って,前記多孔質カーボン部材に流
れ込む空気に微粒子が含まれていても前記多孔質カーボ
ン部材に捕集され,前記ファンから排出される空気によ
って周囲環境を汚染することはない。[0008] The porous honeycomb member is formed in a multi-stage structure, and its ends are alternately formed as closed ends. That is, in the porous honeycomb member, one end of the inlet portion and the outlet portion of the honeycomb structure is formed at the closed end and the other end is formed at the open end, and the inlet portion, the outlet portion, Are alternately formed with a closed end and an open end. Therefore, even if fine particles are contained in the air flowing into the porous carbon member, the surrounding environment is not polluted by the air collected by the porous carbon member and discharged from the fan.
【0009】前記多孔質ハニカム部材は,熱伝導率が大
きいSiC,AlNのセラミックスから形成され,前記
基板からの熱が良好に伝達される。従って,前記基板の
熱は前記多孔質カーボン部材に迅速に移動し,そこで,
空気流によって迅速に運び出される。前記多孔質ハニカ
ム部材が薄くても面積を大きくなるように構成できるの
で,前記多孔質ハニカム部材に通過させる冷却空気の風
量を小さく構成でき,ファンを駆動するモータも小型に
構成でき,冷却装置自体をシンプルに且つ省スペースに
構成することができる。[0009] The porous honeycomb member is formed of SiC or AlN ceramics having high thermal conductivity, and heat from the substrate is transmitted well. Therefore, the heat of the substrate quickly moves to the porous carbon member, where
It is quickly carried away by the airflow. Since the porous honeycomb member can be configured to have a large area even if the porous honeycomb member is thin, the amount of cooling air passed through the porous honeycomb member can be reduced, the motor for driving the fan can be reduced in size, and the cooling device itself can be configured. Can be simply and space-saving.
【0010】前記多孔質ハニカム部材の上流側には空気
清浄器が設けられ,前記多孔質ハニカム部材の後流側に
設けた前記ファンは吸引ファンから構成されている。従
って,前記空気清浄器によって前記多孔質カーボン部材
を流れる空気は清浄にされているので,前記多孔質カー
ボン部材を微粒子等で汚染することがなく,前記多孔質
カーボン部材の耐久性をアップできる。An air purifier is provided upstream of the porous honeycomb member, and the fan provided downstream of the porous honeycomb member is a suction fan. Therefore, since the air flowing through the porous carbon member is cleaned by the air purifier, the durability of the porous carbon member can be improved without contaminating the porous carbon member with fine particles or the like.
【0011】前記小型モータは,前記電子部品の作動状
態に応じて前記ファンの速度調節可能に作動される。従
って,パワートランジスタのような前記電子部品の作動
状態に応じて高熱を発生させたとしても,その温度上昇
に応じて前記ファンの速度をアップし,冷却効果を上昇
させることができる。The small motor is operated so that the speed of the fan can be adjusted according to the operation state of the electronic component. Therefore, even if high heat is generated in accordance with the operation state of the electronic component such as a power transistor, the speed of the fan can be increased according to the temperature rise, and the cooling effect can be increased.
【0012】また,前記多孔質ハニカム部材は,その多
孔質構造体に形成されたオープンポアが50〜200μ
mに形成されている。従って,前記多孔質カーボン部材
が空気流の抵抗になることなく,空気をスムースに流す
ことができ,冷却効果をアップできる。Further, the porous honeycomb member has an open pore formed in the porous structure of 50 to 200 μm.
m. Therefore, the air can flow smoothly without the porous carbon member becoming the resistance of the air flow, and the cooling effect can be improved.
【0013】前記多孔質ハニカム部材は,その多孔質構
造体を形成する壁体の厚さは0.5〜1mmに形成され
ている。従って,前記基板からの熱を効率的に前記多孔
質構造体に受熱でき,その熱を空気流によって外部へ運
び出すことができる。In the porous honeycomb member, the thickness of a wall forming the porous structure is 0.5 to 1 mm. Therefore, heat from the substrate can be efficiently received by the porous structure, and the heat can be carried out to the outside by an air flow.
【0014】[0014]
【発明の実施の形態】以下,図面を参照して,この発明
による半導体回路の冷却装置の実施例を説明する。図1
はこの発明による半導体回路の冷却装置の一実施例を示
す概略断面図,図2は図1の側面図,及び図3は図1の
半導体回路の冷却装置における多孔質カーボン部材の一
部を流れる空気流を示す説明図である。DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS An embodiment of a semiconductor circuit cooling device according to the present invention will be described below with reference to the drawings. FIG.
FIG. 2 is a schematic sectional view showing an embodiment of the semiconductor circuit cooling device according to the present invention, FIG. 2 is a side view of FIG. 1, and FIG. 3 flows through a part of the porous carbon member in the semiconductor circuit cooling device of FIG. It is explanatory drawing which shows an airflow.
【0015】この発明による半導体回路の冷却装置は,
図1に示すように,パワートランジスタ等のトランジス
タ10,サイリスタ18及び電子部品やプリント回路等
の回路素子11を含む電子部品を取り付けた非導電性の
セラミックスから成る基板1を備えた半導体回路に,多
孔質ハニカム部材3から成る冷却装置を設けたものであ
る。パワートランジスタは,大電力,大電流用に設計さ
れたものであり,制御機器に適用されているが,頻繁な
切り換え作動等によって熱を発生する。この半導体回路
の冷却装置は,主として,作動によって発熱するような
電子部品を取り付けた基板1に固着された樹脂部材1
5,樹脂部材15を介して基板1に取り付けられた多孔
質ハニカム部材3,多孔質ハニカム部材3を覆うケーシ
ング2,多孔質ハニカム部材3内に冷却のため空気流を
形成するファン14,及びファン14を駆動する小型モ
ータ4から構成されている。The cooling device for a semiconductor circuit according to the present invention comprises:
As shown in FIG. 1, a semiconductor circuit provided with a substrate 1 made of non-conductive ceramics to which a transistor 10 such as a power transistor, a thyristor 18 and an electronic component including a circuit element 11 such as an electronic component and a printed circuit are attached. A cooling device including a porous honeycomb member 3 is provided. The power transistor is designed for high power and large current, and is applied to a control device. However, the power transistor generates heat by frequent switching operation or the like. The cooling device for a semiconductor circuit mainly includes a resin member 1 fixed to a substrate 1 on which electronic components that generate heat by operation are attached.
5, a porous honeycomb member 3 attached to the substrate 1 via a resin member 15, a casing 2 covering the porous honeycomb member 3, a fan 14 for forming an air flow for cooling in the porous honeycomb member 3, and a fan. It is composed of a small motor 4 for driving the motor 14.
【0016】この半導体回路の冷却装置において,基板
1の一方の面の取付面16に電子部品を取り付け,取付
面16とは反対側の背面17に樹脂部材15が密着して
固着されている。樹脂部材15は,熱伝導率の高い金属
粉,AlN,SiC粉末を混入した樹脂材から形成され
た一種の接着剤の機能を果たすものである。多孔質ハニ
カム部材3は,熱伝導率が大きいセラミックスから構成
され,多孔質構造体のオープンポアを備えた壁体8と壁
体8で形成された空気通路9とから構成されている。ケ
ーシング2は,多孔質ハニカム部材3に流す空気の入口
6と出口7を残して多孔質ハニカム部材3を覆うように
構成されている。ファン14は,多孔質ハニカム部材3
内に入口6から出口7に向かって冷却のため空気流を形
成するように,小型モータ4で駆動される。In this cooling device for a semiconductor circuit, electronic components are mounted on a mounting surface 16 on one side of the substrate 1, and a resin member 15 is tightly fixed to a back surface 17 opposite to the mounting surface 16. The resin member 15 functions as a kind of adhesive formed from a resin material mixed with a metal powder having a high thermal conductivity, AlN, and SiC powder. The porous honeycomb member 3 is made of ceramics having a high thermal conductivity, and includes a wall 8 having an open pore of a porous structure and an air passage 9 formed by the wall 8. The casing 2 is configured to cover the porous honeycomb member 3 except for an inlet 6 and an outlet 7 of the air flowing through the porous honeycomb member 3. The fan 14 is provided with the porous honeycomb member 3.
It is driven by a small motor 4 so as to form an air flow for cooling from an inlet 6 to an outlet 7 therein.
【0017】この半導体回路の冷却装置において,多孔
質ハニカム部材3は,複数段の構造に形成されている。
多孔質ハニカム部材3は,熱伝導率が大きいSiC,A
lNのセラミックスから形成されている。また,多孔質
ハニカム部材3は,そのハニカム構造体の入口部と出口
部とのいずれか一端部が閉鎖端部12に形成され,他端
部が開放端部13に形成されている。また,多孔質ハニ
カム部材3の隣接する入口部は,閉鎖端部12と開放端
部13が交互に形成されている。従って,多孔質ハニカ
ム部材3は,一種の微粒子を捕集できるフィルタに構成
されている。In this semiconductor circuit cooling device, the porous honeycomb member 3 is formed in a multi-stage structure.
The porous honeycomb member 3 is made of SiC, A having a large thermal conductivity.
It is formed from 1N ceramics. Further, in the porous honeycomb member 3, one end of the inlet and the outlet of the honeycomb structure is formed at the closed end 12, and the other end is formed at the open end 13. Further, in the adjacent inlet portion of the porous honeycomb member 3, closed end portions 12 and open end portions 13 are formed alternately. Therefore, the porous honeycomb member 3 is configured as a filter capable of collecting a kind of fine particles.
【0018】多孔質ハニカム部材3の入口6には,空気
清浄器5が設けられ,また,多孔質ハニカム部材3の出
口7には,吸引ファンから構成されているファン14が
設けられている。小型モータ4は,電子部品の作動状態
に応じて,ファン4の速度調節ができるように作動され
る。At the inlet 6 of the porous honeycomb member 3, an air purifier 5 is provided, and at the outlet 7 of the porous honeycomb member 3, a fan 14 composed of a suction fan is provided. The small motor 4 is operated so that the speed of the fan 4 can be adjusted according to the operation state of the electronic components.
【0019】また,多孔質ハニカム部材3は,その多孔
質構造体の壁体8にはオープンポアのサイズが50〜2
00μmになるように形成されている。また,多孔質ハ
ニカム部材3は,その多孔質構造体を形成する壁体8の
厚さは0.5〜1mmに形成されている。The porous honeycomb member 3 has an open pore size of 50 to 2 on the wall 8 of the porous structure.
It is formed to be 00 μm. In the porous honeycomb member 3, the wall 8 forming the porous structure has a thickness of 0.5 to 1 mm.
【0020】この半導体回路の冷却装置は,上記のよう
に構成されているので,トランジスタ等の電子部品の作
動状態に応じて電子部品は発熱を起こすが,その熱は基
板1から樹脂部材15を通じて多孔質ハニカム部材3に
伝達される。そこで,小型モータ4が駆動されてファン
14が回転すると,外部の空気が入口6から多孔質ハニ
カム部材3を通じて吸引され,外部の空気は冷却空気と
なって空気清浄器5を通って多孔質ハニカム部材3の閉
鎖端部12のオープンポア及び開放端部13から多孔質
ハニカム部材3に流入し,多孔質ハニカム部材3に伝達
された熱を奪って出口7から流出し,多孔質ハニカム部
材3を放熱する。多孔質ハニカム部材3自体は,空気の
接触面積が極めて大きいので,多孔質ハニカム部材3か
らの放熱は盛んに行なわれるので,多孔質ハニカム部材
3を通る空気の風量を余り大きくする必要がなく,従っ
て,モータ4自体を小型に形成することができ,冷却装
置自体をシンプルな省スペースの構造に構成することが
できる。Since the cooling device for a semiconductor circuit is configured as described above, the electronic components generate heat in accordance with the operation state of the electronic components such as transistors, but the heat is transmitted from the substrate 1 through the resin member 15. The power is transmitted to the porous honeycomb member 3. Then, when the small motor 4 is driven and the fan 14 rotates, external air is sucked from the inlet 6 through the porous honeycomb member 3, and the external air becomes cooling air and passes through the air purifier 5 to form the porous honeycomb. The porous honeycomb member 3 flows into the porous honeycomb member 3 from the open pores and the open end 13 of the closed end portion 12 of the member 3, takes out the heat transmitted to the porous honeycomb member 3, and flows out from the outlet 7 to remove the porous honeycomb member 3. Dissipate heat. Since the porous honeycomb member 3 itself has an extremely large air contact area, heat is radiated from the porous honeycomb member 3 actively, so that it is not necessary to increase the air volume of the air passing through the porous honeycomb member 3 so much. Therefore, the motor 4 itself can be formed in a small size, and the cooling device itself can be configured in a simple space-saving structure.
【0021】[0021]
【発明の効果】この発明による半導体回路の冷却装置
は,上記のように構成されているので,トランジスタ及
び回路素子を含む電子部品を取り付けた基板に,ファン
と多孔質ハニカム部材を取り付けるだけであり,装置自
体をコンパクトに構成することができ,モータ自体を小
型に構成できる。従って,この半導体回路の冷却装置
は,例えば,コージェネレーションシステムに組み込ま
れる発電機の制御装置や,モータを使用するハイブリッ
ト自動車等の制御装置に適用することができる。The semiconductor circuit cooling device according to the present invention is constructed as described above, so that only a fan and a porous honeycomb member are mounted on a substrate on which electronic components including transistors and circuit elements are mounted. The device itself can be made compact, and the motor itself can be made small. Therefore, the cooling device for a semiconductor circuit can be applied to, for example, a control device for a generator incorporated in a cogeneration system or a control device for a hybrid vehicle using a motor.
【図1】この発明による半導体回路の冷却装置の一実施
例を示す概略断面図である。FIG. 1 is a schematic sectional view showing an embodiment of a cooling device for a semiconductor circuit according to the present invention.
【図2】図1の半導体回路の冷却装置の側面図である。FIG. 2 is a side view of the semiconductor circuit cooling device of FIG. 1;
【図3】図1の半導体回路の冷却装置の符号Aにおける
部分の拡大断面図である。3 is an enlarged cross-sectional view of a portion indicated by reference numeral A of the cooling device for a semiconductor circuit of FIG.
1 基板 2 ケーシング 3 多孔質ハニカム部材 4 小型モータ 5 空気清浄器 6 入口 7 出口 8 壁体 9 空気通路 10 トランジスタ 11 回路素子 12 閉鎖端部 13 開放端部 14 ファン 15 樹脂部材 16 取付面 17 背面 18 サイリスタ DESCRIPTION OF SYMBOLS 1 Substrate 2 Casing 3 Porous honeycomb member 4 Small motor 5 Air cleaner 6 Inlet 7 Exit 8 Wall 9 Air passage 10 Transistor 11 Circuit element 12 Closed end 13 Open end 14 Fan 15 Resin member 16 Mounting surface 17 Back surface 18 Thyristor
Claims (10)
を取り付けた非導電性のセラミックスから成る基板を備
えた半導体回路において,前記電子部品を取り付けた前
記基板の取付面とは反対側の背面に固着された樹脂部材
を介して前記基板に取り付けられ且つ空気通路を有する
熱伝導率が大きいセラミックスから成る多孔質ハニカム
部材,前記多孔質ハニカム部材に流す空気の入口と出口
を残して前記多孔質ハニカム部材を覆うケーシング,及
び前記多孔質ハニカム部材内に前記入口から前記出口に
向かって冷却のため空気流を形成するファン,及び前記
ファンを駆動する小型モータ,から成ることを特徴とす
る半導体回路の冷却装置。1. A semiconductor circuit comprising a substrate made of non-conductive ceramics on which an electronic component including at least a transistor is mounted, the semiconductor circuit being fixed to a back surface opposite to a mounting surface of the substrate on which the electronic component is mounted. A porous honeycomb member which is attached to the substrate via a resin member and has an air passage and is made of ceramic having a high thermal conductivity, and covers the porous honeycomb member except for an inlet and an outlet of air flowing through the porous honeycomb member. A cooling device for a semiconductor circuit, comprising: a casing; a fan for forming an air flow for cooling from the inlet to the outlet in the porous honeycomb member; and a small motor for driving the fan.
造に形成されていることを特徴とする請求項1に記載の
半導体回路の冷却装置。2. The cooling device for a semiconductor circuit according to claim 1, wherein said porous honeycomb member is formed in a multi-stage structure.
が混入されていることを特徴とする請求項1に記載の半
導体回路の冷却装置。3. The semiconductor circuit cooling device according to claim 1, wherein a material powder having a high thermal conductivity is mixed in said resin member.
金属粉,AlNやSiCの粉末であることを特徴とする
請求項3に記載の半導体回路の冷却装置。4. The semiconductor circuit cooling device according to claim 3, wherein the material powder mixed in the resin member is a metal powder, AlN or SiC powder.
ム構造体の入口部と出口部とのいずれか一端部が閉鎖端
部に且つ他端部が開放端部に形成され,前記入口部と前
記出口部との隣接する端部が交互に閉鎖端部と開口端部
とに形成されていることを特徴とする請求項1に記載の
半導体回路の冷却装置。5. The porous honeycomb member, wherein one end of an inlet and an outlet of the honeycomb structure is formed at a closed end and the other end is formed at an open end. 2. The cooling device for a semiconductor circuit according to claim 1, wherein ends adjacent to the outlet are alternately formed as a closed end and an open end.
大きいSiC,AlNのセラミックスから形成されてい
ることを特徴とする請求項1に記載の半導体回路の冷却
装置。6. The cooling device for a semiconductor circuit according to claim 1, wherein said porous honeycomb member is made of ceramics of SiC or AlN having high thermal conductivity.
気清浄器が設けられ,前記多孔質ハニカム部材の後流側
に設けた前記ファンは吸引ファンから構成されているこ
とを特徴とする請求項1に記載の半導体回路の冷却装
置。7. An air purifier is provided upstream of the porous honeycomb member, and the fan provided downstream of the porous honeycomb member is a suction fan. Item 2. A cooling device for a semiconductor circuit according to item 1.
状態に応じて前記ファンの速度調節可能に作動されるこ
とを特徴とする請求項1に記載の半導体回路の冷却装
置。8. The semiconductor circuit cooling device according to claim 1, wherein the small motor is operated such that the speed of the fan can be adjusted according to an operation state of the electronic component.
構造体に形成されたオープンポアが50〜200μmに
形成されていることを特徴とする請求項1に記載の半導
体回路の冷却装置。9. The cooling device for a semiconductor circuit according to claim 1, wherein the porous honeycomb member has an open pore formed in the porous structure of 50 to 200 μm.
質構造体を形成する壁体の厚さは0.5〜1mmに形成
されていることを特徴とする請求項1に記載の半導体回
路の冷却装置。10. The semiconductor circuit according to claim 1, wherein the thickness of a wall forming the porous structure of the porous honeycomb member is 0.5 to 1 mm. Cooling system.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP27038897A JPH1197597A (en) | 1997-09-18 | 1997-09-18 | Cooling apparatus for semiconductor circuit |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP27038897A JPH1197597A (en) | 1997-09-18 | 1997-09-18 | Cooling apparatus for semiconductor circuit |
Publications (1)
Publication Number | Publication Date |
---|---|
JPH1197597A true JPH1197597A (en) | 1999-04-09 |
Family
ID=17485576
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP27038897A Pending JPH1197597A (en) | 1997-09-18 | 1997-09-18 | Cooling apparatus for semiconductor circuit |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPH1197597A (en) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN102386063A (en) * | 2010-09-06 | 2012-03-21 | 大日本网屏制造株式会社 | Substrate cooling apparatus |
TWI723542B (en) * | 2019-09-16 | 2021-04-01 | 普天投資有限公司 | AC motor speed control structure |
-
1997
- 1997-09-18 JP JP27038897A patent/JPH1197597A/en active Pending
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN102386063A (en) * | 2010-09-06 | 2012-03-21 | 大日本网屏制造株式会社 | Substrate cooling apparatus |
TWI723542B (en) * | 2019-09-16 | 2021-04-01 | 普天投資有限公司 | AC motor speed control structure |
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