TWI429793B - 具有高熱傳導性之半導體晶圓 - Google Patents

具有高熱傳導性之半導體晶圓 Download PDF

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Publication number
TWI429793B
TWI429793B TW096103543A TW96103543A TWI429793B TW I429793 B TWI429793 B TW I429793B TW 096103543 A TW096103543 A TW 096103543A TW 96103543 A TW96103543 A TW 96103543A TW I429793 B TWI429793 B TW I429793B
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TW
Taiwan
Prior art keywords
carriers
substrate
protective layer
doped
thermal conductivity
Prior art date
Application number
TW096103543A
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English (en)
Chinese (zh)
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TW200801261A (en
Inventor
希奎斯特 麥可Ｒ
Original Assignee
Ｍｅｍｃ電子材料公司
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Application filed by Ｍｅｍｃ電子材料公司 filed Critical Ｍｅｍｃ電子材料公司
Publication of TW200801261A publication Critical patent/TW200801261A/zh
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Publication of TWI429793B publication Critical patent/TWI429793B/zh

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/60—Wet etching
    • H10P50/64—Wet etching of semiconductor materials
    • H10P50/642—Chemical etching
    • H10P50/644—Anisotropic liquid etching
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/01—Manufacture or treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/60—Impurity distributions or concentrations
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/199—Back-illuminated image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/29—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by the substrates
    • H10P14/2901—Materials
    • H10P14/2902—Materials being Group IVA materials
    • H10P14/2905—Silicon, silicon germanium or germanium
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/32—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by intermediate layers between substrates and deposited layers
    • H10P14/3202—Materials thereof
    • H10P14/3204—Materials thereof being Group IVA semiconducting materials
    • H10P14/3211—Silicon, silicon germanium or germanium
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/34—Deposited materials, e.g. layers
    • H10P14/3402—Deposited materials, e.g. layers characterised by the chemical composition
    • H10P14/3404—Deposited materials, e.g. layers characterised by the chemical composition being Group IVA materials
    • H10P14/3411—Silicon, silicon germanium or germanium
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P90/00—Preparation of wafers not covered by a single main group of this subclass, e.g. wafer reinforcement
    • H10P90/19—Preparing inhomogeneous wafers
    • H10P90/1904—Preparing vertically inhomogeneous wafers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/10—Semiconductor bodies
    • H10F77/14—Shape of semiconductor bodies; Shapes, relative sizes or dispositions of semiconductor regions within semiconductor bodies
    • H10F77/148—Shapes of potential barriers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P32/00—Diffusion of dopants within, into or out of wafers, substrates or parts of devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P32/00—Diffusion of dopants within, into or out of wafers, substrates or parts of devices
    • H10P32/10—Diffusion of dopants within, into or out of semiconductor bodies or layers
    • H10P32/14—Diffusion of dopants within, into or out of semiconductor bodies or layers within a single semiconductor body or layer in a solid phase; between different semiconductor bodies or layers, both in a solid phase
    • H10P32/1404—Diffusion of dopants within, into or out of semiconductor bodies or layers within a single semiconductor body or layer in a solid phase; between different semiconductor bodies or layers, both in a solid phase using predeposition followed by drive-in of impurities into the semiconductor surface, e.g. predeposition from a gaseous phase
    • H10P32/1406—Diffusion of dopants within, into or out of semiconductor bodies or layers within a single semiconductor body or layer in a solid phase; between different semiconductor bodies or layers, both in a solid phase using predeposition followed by drive-in of impurities into the semiconductor surface, e.g. predeposition from a gaseous phase by ion implantation
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P32/00—Diffusion of dopants within, into or out of wafers, substrates or parts of devices
    • H10P32/10—Diffusion of dopants within, into or out of semiconductor bodies or layers
    • H10P32/17—Diffusion of dopants within, into or out of semiconductor bodies or layers characterised by the semiconductor material
    • H10P32/171—Diffusion of dopants within, into or out of semiconductor bodies or layers characterised by the semiconductor material being group IV material

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  • Recrystallisation Techniques (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
TW096103543A 2006-01-31 2007-01-31 具有高熱傳導性之半導體晶圓 TWI429793B (zh)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US76364306P 2006-01-31 2006-01-31

Publications (2)

Publication Number Publication Date
TW200801261A TW200801261A (en) 2008-01-01
TWI429793B true TWI429793B (zh) 2014-03-11

Family

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Family Applications (1)

Application Number Title Priority Date Filing Date
TW096103543A TWI429793B (zh) 2006-01-31 2007-01-31 具有高熱傳導性之半導體晶圓

Country Status (8)

Country Link
US (3) US20070176238A1 (https=)
EP (3) EP1994562A1 (https=)
JP (1) JP5261194B2 (https=)
KR (2) KR20120106893A (https=)
CN (1) CN101410977A (https=)
MY (1) MY153160A (https=)
TW (1) TWI429793B (https=)
WO (1) WO2007090055A1 (https=)

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US20090050939A1 (en) 2007-07-17 2009-02-26 Briere Michael A Iii-nitride device
KR20100077363A (ko) * 2008-12-29 2010-07-08 주식회사 동부하이텍 씨모스 이미지 센서의 제조 방법
US7985658B2 (en) * 2009-06-08 2011-07-26 Aptina Imaging Corporation Method of forming substrate for use in imager devices
EP2555244A1 (en) * 2011-08-03 2013-02-06 austriamicrosystems AG A method of producing a photodiode device and a photodiode device comprising an etch stop layer
US8748315B2 (en) 2012-02-15 2014-06-10 Taiwan Semiconductor Manufacturing Co., Ltd. Condition before TMAH improved device performance
US8956938B2 (en) * 2012-05-16 2015-02-17 International Business Machines Corporation Epitaxial semiconductor resistor with semiconductor structures on same substrate
US9111898B2 (en) * 2013-02-19 2015-08-18 Taiwan Semiconductor Manufacturing Company. Ltd. Multiple layer substrate
CN104064688B (zh) * 2014-07-11 2016-09-21 深圳市华星光电技术有限公司 具有存储电容的tft基板的制作方法及该tft基板
CN112776003B (zh) * 2019-11-07 2022-05-06 台达电子工业股份有限公司 散热装置及其适用的机器人
CN112397570A (zh) * 2020-11-17 2021-02-23 华虹半导体(无锡)有限公司 半导体基底结构及其制作方法
EP4576168A1 (en) * 2023-12-22 2025-06-25 Nexperia B.V. Suppression of auto-doping during epitaxial growth of epitaxy layer in a semiconductor device

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US4104090A (en) * 1977-02-24 1978-08-01 International Business Machines Corporation Total dielectric isolation utilizing a combination of reactive ion etching, anodic etching, and thermal oxidation
US4247862B1 (en) * 1977-08-26 1995-12-26 Intel Corp Ionzation resistant mos structure
US4506436A (en) * 1981-12-21 1985-03-26 International Business Machines Corporation Method for increasing the radiation resistance of charge storage semiconductor devices
US4628591A (en) * 1984-10-31 1986-12-16 Texas Instruments Incorporated Method for obtaining full oxide isolation of epitaxial islands in silicon utilizing selective oxidation of porous silicon
JPH0793282B2 (ja) * 1985-04-15 1995-10-09 株式会社日立製作所 半導体装置の製造方法
FR2638892B1 (fr) * 1988-11-09 1992-12-24 Sgs Thomson Microelectronics Procede de modulation de la quantite d'or diffusee dans un substrat de silicium et diode rapide obtenue par ce procede
US5023200A (en) * 1988-11-22 1991-06-11 The United States Of America As Represented By The United States Department Of Energy Formation of multiple levels of porous silicon for buried insulators and conductors in silicon device technologies
US5024723A (en) * 1990-05-07 1991-06-18 Goesele Ulrich M Method of producing a thin silicon on insulator layer by wafer bonding and chemical thinning
JPH07187892A (ja) * 1991-06-28 1995-07-25 Internatl Business Mach Corp <Ibm> シリコン及びその形成方法
JPH06151303A (ja) * 1992-11-11 1994-05-31 Hitachi Ltd 半導体ウエーハの形成方法
US5880010A (en) * 1994-07-12 1999-03-09 Sun Microsystems, Inc. Ultrathin electronics
US5668045A (en) * 1994-11-30 1997-09-16 Sibond, L.L.C. Process for stripping outer edge of BESOI wafers
US5789309A (en) * 1996-12-30 1998-08-04 Memc Electronic Materials, Inc. Method and system for monocrystalline epitaxial deposition
JPH10242153A (ja) * 1997-02-26 1998-09-11 Hitachi Ltd 半導体ウエハ、半導体ウエハの製造方法、半導体装置および半導体装置の製造方法
WO1998042010A1 (en) 1997-03-17 1998-09-24 Genus, Inc. Bonded soi wafers using high energy implant
EP1148544A1 (de) 2000-04-19 2001-10-24 Infineon Technologies AG Verfahren zum Dünnen eines Substrats
JP3785067B2 (ja) * 2001-08-22 2006-06-14 株式会社東芝 半導体素子の製造方法
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Also Published As

Publication number Publication date
US8080482B2 (en) 2011-12-20
CN101410977A (zh) 2009-04-15
JP5261194B2 (ja) 2013-08-14
EP1994562A1 (en) 2008-11-26
US8865601B2 (en) 2014-10-21
EP2637207A1 (en) 2013-09-11
MY153160A (en) 2015-01-29
US20090233428A1 (en) 2009-09-17
KR20120106893A (ko) 2012-09-26
WO2007090055A1 (en) 2007-08-09
US20070176238A1 (en) 2007-08-02
JP2009525622A (ja) 2009-07-09
EP2637208A1 (en) 2013-09-11
KR20080098632A (ko) 2008-11-11
TW200801261A (en) 2008-01-01
US20110318912A1 (en) 2011-12-29

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