TWI427436B - 微影裝置及元件製造方法 - Google Patents

微影裝置及元件製造方法 Download PDF

Info

Publication number
TWI427436B
TWI427436B TW100106059A TW100106059A TWI427436B TW I427436 B TWI427436 B TW I427436B TW 100106059 A TW100106059 A TW 100106059A TW 100106059 A TW100106059 A TW 100106059A TW I427436 B TWI427436 B TW I427436B
Authority
TW
Taiwan
Prior art keywords
substrate
radiation
lens
individual
lithography apparatus
Prior art date
Application number
TW100106059A
Other languages
English (en)
Chinese (zh)
Other versions
TW201142535A (en
Inventor
Zwet Erwin John Van
Jager Pieter Willem Herman De
Johannes Onvlee
Erik Christiaan Fritz
Albert Dekker
Johannus P F Spierdijk
Man Hendrik De
Original Assignee
Asml Netherlands Bv
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Asml Netherlands Bv filed Critical Asml Netherlands Bv
Publication of TW201142535A publication Critical patent/TW201142535A/zh
Application granted granted Critical
Publication of TWI427436B publication Critical patent/TWI427436B/zh

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70383—Direct write, i.e. pattern is written directly without the use of a mask by one or multiple beams
    • G03F7/704—Scanned exposure beam, e.g. raster-, rotary- and vector scanning
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216—Mask projection systems
    • G03F7/70258—Projection system adjustments, e.g. adjustments during exposure or alignment during assembly of projection system
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70383—Direct write, i.e. pattern is written directly without the use of a mask by one or multiple beams
    • G03F7/70391—Addressable array sources specially adapted to produce patterns, e.g. addressable LED arrays

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
TW100106059A 2010-02-23 2011-02-23 微影裝置及元件製造方法 TWI427436B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US30739710P 2010-02-23 2010-02-23
US36463410P 2010-07-15 2010-07-15

Publications (2)

Publication Number Publication Date
TW201142535A TW201142535A (en) 2011-12-01
TWI427436B true TWI427436B (zh) 2014-02-21

Family

ID=44210084

Family Applications (1)

Application Number Title Priority Date Filing Date
TW100106059A TWI427436B (zh) 2010-02-23 2011-02-23 微影裝置及元件製造方法

Country Status (6)

Country Link
JP (1) JP5584785B2 (ja)
KR (1) KR101496882B1 (ja)
CN (1) CN102844713B (ja)
NL (1) NL2006257A (ja)
TW (1) TWI427436B (ja)
WO (1) WO2011104175A1 (ja)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL2009342A (en) * 2011-10-31 2013-05-07 Asml Netherlands Bv Lithographic apparatus and device manufacturing method.
NL2009902A (en) * 2011-12-27 2013-07-01 Asml Netherlands Bv Lithographic apparatus and device manufacturing method.
KR101688444B1 (ko) * 2012-04-11 2016-12-21 에이에스엠엘 네델란즈 비.브이. 리소그래피 장치용 회전 가능 프레임

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20030091277A1 (en) * 2001-11-15 2003-05-15 Wenhui Mei Flattened laser scanning system
US20080237490A1 (en) * 2007-03-28 2008-10-02 Orc Manufacturing Co., Ltd. Exposure device
US20080316458A1 (en) * 2005-03-28 2008-12-25 Fujifilm Corporation Light Quantity Adjustment Method, Image Recording Method, and Device

Family Cites Families (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5523193A (en) 1988-05-31 1996-06-04 Texas Instruments Incorporated Method and apparatus for patterning and imaging member
JP2938568B2 (ja) 1990-05-02 1999-08-23 フラウンホファー・ゲゼルシャフト・ツール・フォルデルング・デル・アンゲバンテン・フォルシュング・アインゲトラーゲネル・フェライン 照明装置
US5229872A (en) 1992-01-21 1993-07-20 Hughes Aircraft Company Exposure device including an electrically aligned electronic mask for micropatterning
US5216247A (en) * 1992-02-07 1993-06-01 Ying Wang Optical scanning method with circular arc scanning traces
EP0956516B1 (en) 1997-01-29 2002-04-10 Micronic Laser Systems Ab Method and apparatus for the production of a structure by focused laser radiation on a photosensitively coated substrate
SE509062C2 (sv) 1997-02-28 1998-11-30 Micronic Laser Systems Ab Dataomvandlingsmetod för en laserskrivare med flera strålar för mycket komplexa mikrokolitografiska mönster
US6268613B1 (en) * 1999-03-02 2001-07-31 Phormax Corporation Multiple-head phosphor screen scanner
EP1321822A1 (en) * 2001-12-21 2003-06-25 ASML Netherlands B.V. Lithographic apparatus and device manufacturing method
JP2007524130A (ja) * 2004-02-25 2007-08-23 カール・ツァイス・エスエムティー・アーゲー 光学要素を取り付けるためのハウジング構造
US7081947B2 (en) * 2004-02-27 2006-07-25 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
JP2007041239A (ja) * 2005-08-02 2007-02-15 Fujifilm Corp カラーフィルタの製造方法、及びカラーフィルタ並びに液晶表示装置
US7626181B2 (en) * 2005-12-09 2009-12-01 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
CN201083959Y (zh) * 2007-05-23 2008-07-09 芯硕半导体（合肥）有限公司 综合式直写光刻装置
US7768627B2 (en) * 2007-06-14 2010-08-03 Asml Netherlands B.V. Illumination of a patterning device based on interference for use in a maskless lithography system

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20030091277A1 (en) * 2001-11-15 2003-05-15 Wenhui Mei Flattened laser scanning system
US20080316458A1 (en) * 2005-03-28 2008-12-25 Fujifilm Corporation Light Quantity Adjustment Method, Image Recording Method, and Device
US20080237490A1 (en) * 2007-03-28 2008-10-02 Orc Manufacturing Co., Ltd. Exposure device

Also Published As

Publication number Publication date
KR20120123708A (ko) 2012-11-09
TW201142535A (en) 2011-12-01
JP2013520816A (ja) 2013-06-06
WO2011104175A1 (en) 2011-09-01
KR101496882B1 (ko) 2015-03-02
NL2006257A (en) 2011-08-24
CN102844713A (zh) 2012-12-26
CN102844713B (zh) 2016-04-20
JP5584785B2 (ja) 2014-09-03

Similar Documents

Publication Publication Date Title
TWI427431B (zh) 微影裝置、可程式化圖案化器件及微影方法
TWI414904B (zh) 微影裝置及元件製造方法
TWI426358B (zh) 微影裝置及元件製造方法
TWI448830B (zh) 微影裝置及元件製造方法
TWI408514B (zh) 微影裝置及元件製造方法
TWI467347B (zh) 基板處置裝置及微影裝置
TWI427437B (zh) 微影裝置及元件製造方法
TWI557514B (zh) 微影裝置及元件製造方法
TWI431435B (zh) 微影裝置及元件製造方法
TWI533094B (zh) 微影裝置及元件製造方法
TWI438580B (zh) 微影裝置及元件製造方法
TWI438579B (zh) 微影裝置及元件製造方法
TWI427436B (zh) 微影裝置及元件製造方法
TWI505039B (zh) 微影裝置及元件製造方法

Legal Events

Date Code Title Description
MM4A Annulment or lapse of patent due to non-payment of fees