TWI427436B - Lithographic apparatus and device manufacturing method - Google Patents

Lithographic apparatus and device manufacturing method Download PDF

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TWI427436B
TWI427436B TW100106059A TW100106059A TWI427436B TW I427436 B TWI427436 B TW I427436B TW 100106059 A TW100106059 A TW 100106059A TW 100106059 A TW100106059 A TW 100106059A TW I427436 B TWI427436 B TW I427436B
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substrate
radiation
lens
individual
lithography apparatus
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TW100106059A
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TW201142535A (en
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Zwet Erwin John Van
Jager Pieter Willem Herman De
Johannes Onvlee
Erik Christiaan Fritz
Albert Dekker
Johannus P F Spierdijk
Man Hendrik De
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Asml Netherlands Bv
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    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70Microphotolithographic exposure; Apparatus therefor
    • G03F7/70383Direct write, i.e. pattern is written directly without the use of a mask by one or multiple beams
    • G03F7/704Scanned exposure beam, e.g. raster-, rotary- and vector scanning
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216Mask projection systems
    • G03F7/70258Projection system adjustments, e.g. adjustments during exposure or alignment during assembly of projection system
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70Microphotolithographic exposure; Apparatus therefor
    • G03F7/70383Direct write, i.e. pattern is written directly without the use of a mask by one or multiple beams
    • G03F7/70391Addressable array sources specially adapted to produce patterns, e.g. addressable LED arrays

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)

Description

微影裝置及元件製造方法Microlithography device and component manufacturing method

本發明係關於一種微影裝置、一種可程式化圖案化元件,及一種元件製造方法。The present invention relates to a lithography apparatus, a programmable patterning element, and a component manufacturing method.

微影裝置為將所要圖案施加至基板或基板之部分上的機器。微影裝置可用於(例如)積體電路(IC)、平板顯示器及具有精細特徵之其他元件或結構之製造中。在習知微影裝置中,可被稱作光罩或比例光罩之圖案化元件可用以產生對應於IC、平板顯示器或其他元件之個別層的電路圖案。此圖案可(例如)經由成像至提供於基板上之輻射敏感材料(抗蝕劑)層上而轉印於基板(例如,矽晶圓或玻璃板)(之部分)上。A lithography device is a machine that applies a desired pattern to a portion of a substrate or substrate. The lithography apparatus can be used, for example, in the fabrication of integrated circuits (ICs), flat panel displays, and other components or structures having fine features. In conventional lithography devices, patterned elements, which may be referred to as reticle or proportional reticle, may be used to create circuit patterns corresponding to individual layers of an IC, flat panel display, or other component. This pattern can be transferred, for example, onto a portion of the substrate (eg, a germanium wafer or glass sheet) via imaging onto a layer of radiation-sensitive material (resist) provided on the substrate.

代替電路圖案,圖案化元件可用以產生其他圖案,例如,彩色濾光器圖案或圓點矩陣。代替習知光罩,圖案化元件可包含圖案化陣列,圖案化陣列包含產生電路或其他適用圖案之個別可控制器件陣列。此「無光罩」系統相較於習知以光罩為基礎之系統的優點在於:可更快且成本更少地提供及/或改變圖案。Instead of a circuit pattern, the patterned elements can be used to create other patterns, such as color filter patterns or dot matrices. Instead of a conventional mask, the patterned elements can comprise a patterned array comprising an array of individually controllable devices that produce circuitry or other suitable patterns. An advantage of this "maskless" system over conventional mask-based systems is that the pattern can be provided and/or changed more quickly and at less cost.

因此,無光罩系統包括可程式化圖案化元件(例如,空間光調變器、對比元件,等等)。可程式化圖案化元件經程式化(例如,電子地或光學地)以使用個別可控制器件陣列來形成所要經圖案化光束。可程式化圖案化元件之類型包括微鏡面陣列、液晶顯示器(LCD)陣列、光柵光閥陣列,及其類似者。Thus, a maskless system includes programmable patterning elements (eg, spatial light modulators, contrast elements, etc.). The programmable patterned elements are programmed (eg, electronically or optically) to form a desired patterned beam using an array of individually controllable devices. Types of programmable patterning elements include micromirror arrays, liquid crystal display (LCD) arrays, grating light valve arrays, and the like.

需要(例如)提供一種包括一可程式化圖案化元件之可撓性低成本微影裝置。There is a need, for example, to provide a flexible, low cost lithography apparatus that includes a programmable patterning element.

在一實施例中,揭示一種微影裝置,該微影裝置包括:一調變器,該調變器經組態以將基板之一曝光區域曝光至根據一所要圖案所調變之複數個光束;及一投影系統,該投影系統經組態以將該等經調變光束投影至該基板上。該調變器可相對於該曝光區域可移動,及/或該投影系統可具有用以接收該複數個光束之一透鏡陣列,該透鏡陣列係相對於該曝光區域可移動。In one embodiment, a lithography apparatus is disclosed, the lithography apparatus comprising: a modulator configured to expose an exposed area of a substrate to a plurality of light beams modulated according to a desired pattern And a projection system configured to project the modulated beam onto the substrate. The modulator is moveable relative to the exposure region, and/or the projection system can have a lens array for receiving the plurality of beams, the lens array being movable relative to the exposure region.

在一實施例中,一種微影裝置可具備(例如)一光學圓柱,該光學圓柱能夠將一圖案產生至一基板之一目標部分上。該光學圓柱可具備:一自發射對比元件,該自發射對比元件經組態以發射一輻射光束;及一投影系統,該投影系統經組態以將該光束之至少一部分投影至該目標部分上。該裝置可具備一致動器,該致動器用以相對於該基板移動該光學圓柱或其一部分。因此,可達成在該光束與該基板之間的一相對移動。藉由在該移動期間「開啟」或「關閉」該自發射對比元件,可在該基板上產生一圖案。In one embodiment, a lithography apparatus can be provided with, for example, an optical cylinder capable of producing a pattern onto a target portion of a substrate. The optical cylinder can be: a self-emissive contrast element configured to emit a radiation beam; and a projection system configured to project at least a portion of the beam onto the target portion . The device can be provided with an actuator for moving the optical cylinder or a portion thereof relative to the substrate. Thus, a relative movement between the beam and the substrate can be achieved. A pattern can be created on the substrate by "turning on" or "off" the self-emissive contrast element during the movement.

該光學圓柱之容許度可導致投影至該基板上之該圖案的不準確度。舉例而言,需要提供一種微影裝置及元件製造方法,其中可至少部分地移除此等容許度中之一些容許度。The tolerance of the optical cylinder can result in inaccuracies in the pattern projected onto the substrate. For example, it is desirable to provide a lithography apparatus and component fabrication method in which some of these tolerances can be at least partially removed.

根據本發明之一實施例,提供一種裝置,該裝置包含:一光學圓柱,該光學圓柱能夠在一基板之一目標部分上產生一圖案,該光學圓柱包含一投影系統,該投影系統經組態以將一光束投影至該基板上,該投影系統包含一可旋轉框架及藉由該可旋轉框架支撐之複數個透鏡;一致動器,該致動器經組態以旋轉該框架;及一可調整件(adjustable member),該可調整件用以相對於該可旋轉框架調整該等透鏡中之至少一者之一位置。According to an embodiment of the invention, an apparatus is provided, the apparatus comprising: an optical cylinder capable of producing a pattern on a target portion of a substrate, the optical cylinder comprising a projection system, the projection system being configured To project a beam onto the substrate, the projection system includes a rotatable frame and a plurality of lenses supported by the rotatable frame; an actuator configured to rotate the frame; An adjustable member for adjusting a position of at least one of the lenses relative to the rotatable frame.

根據本發明之一實施例,提供一種元件製造方法,該元件製造方法包含:藉由使用一投影系統將一輻射光束投影至基板上而在該基板之一目標部分上產生一圖案,該投影系統具有一可旋轉框架及藉由該可旋轉框架支撐之複數個透鏡;及藉由旋轉該可旋轉框架而相對於該基板移動該等透鏡,其中藉由一可調整件而相對於該可旋轉框架調整該等透鏡中之至少一者之一位置。According to an embodiment of the present invention, there is provided a component manufacturing method comprising: generating a pattern on a target portion of a substrate by projecting a radiation beam onto a substrate using a projection system, the projection system Having a rotatable frame and a plurality of lenses supported by the rotatable frame; and moving the lenses relative to the substrate by rotating the rotatable frame relative to the rotatable frame by an adjustable member Adjusting the position of at least one of the lenses.

根據本發明之一實施例,提供一種裝置,該裝置包含:複數個透鏡或一個別可控制器件陣列,該複數個透鏡或該個別可控制器件陣列係藉由一可旋轉框架支撐;一致動器,該致動器經組態以旋轉該可旋轉框架;及一可調整件,該可調整件用以相對於該可旋轉框架調整該等透鏡中之至少一者及/或該等個別可控制器件中之至少一者之一位置。According to an embodiment of the invention, there is provided an apparatus comprising: a plurality of lenses or an array of controllable devices, the plurality of lenses or the array of individually controllable devices being supported by a rotatable frame; an actuator Actuating the actuator to rotate the rotatable frame; and an adjustable member for adjusting at least one of the lenses and/or the individually controllable relative to the rotatable frame One of at least one of the devices.

根據本發明之一實施例,提供一種可調整件,該可調整件用以相對於一可旋轉框架調整複數個透鏡中之至少一透鏡或一個別可控制器件陣列中之一個別可控制器件之一位置,該可旋轉框架支撐該複數個透鏡或該個別可控制器件陣列。According to an embodiment of the invention, an adjustable member is provided for adjusting at least one of a plurality of lenses or an individually controllable device of an array of controllable devices relative to a rotatable frame In one position, the rotatable frame supports the plurality of lenses or the array of individually controllable devices.

根據本發明之一實施例,提供一種裝置,該裝置包含:一光學圓柱,該光學圓柱能夠在一基板之一目標部分上產生一圖案,該光學圓柱包含複數個個別可控制器件,該複數個個別可控制器件經組態以發射一光束,該複數個個別可控制器件係藉由一可移動框架支撐;一致動器,該致動器經組態以移動該框架;及一可調整件,該可調整件用以相對於該可移動框架調整該等個別可控制器件中之至少一者之一位置。According to an embodiment of the invention, there is provided an apparatus comprising: an optical cylinder capable of producing a pattern on a target portion of a substrate, the optical cylinder comprising a plurality of individual controllable devices, the plurality of Individual controllable devices are configured to emit a beam of light, the plurality of individually controllable devices being supported by a movable frame; an actuator configured to move the frame; and an adjustable member, The adjustable member is adapted to adjust a position of at least one of the individually controllable devices relative to the movable frame.

併入本文中且形成本說明書之部分的隨附圖式說明本發明之一實施例,且連同[實施方式]進一步用以解釋本發明之原理且使熟習相關技術者能夠製造及使用本發明。在該等圖式中,相似元件符號可指示相同或功能上類似之器件。The embodiments of the present invention are described in the accompanying drawings, and are in the <RTIgt; In the drawings, like element symbols may indicate the same or functionally similar devices.

本文中描述一種無光罩微影裝置、一種無光罩微影方法、一種可程式化圖案化元件以及其他裝置、製品及方法之一或多個實施例。在一實施例中,提供一種低成本及/或可撓性無光罩微影裝置。因為微影裝置係無光罩的,所以無需習知光罩來曝光(例如)IC或平板顯示器。類似地,對於封裝應用無需一或多個環(ring);可程式化圖案化元件可提供用於封裝應用之數位邊緣處理「環」以避免邊緣投影。無光罩(數位圖案化)可實現與可撓性基板一起之使用。One or more embodiments of a matte lithography apparatus, a maskless lithography method, a programmable patterning element, and other devices, articles, and methods are described herein. In one embodiment, a low cost and/or flexible maskless lithography apparatus is provided. Because the lithography device is reticle-free, there is no need for a conventional reticle to expose, for example, an IC or flat panel display. Similarly, one or more rings are not required for package applications; the programmable patterning elements provide a digital edge processing "loop" for package applications to avoid edge projection. A maskless (digital patterning) enables use with a flexible substrate.

在一實施例中,微影裝置能夠具有超非臨界應用(super-non-critical application)。在一實施例中,微影裝置能夠具有0.1微米解析度,例如,0.5微米解析度或1微米解析度。在一實施例中,微影裝置能夠具有20微米解析度,例如,10微米解析度或5微米解析度。在一實施例中,微影裝置能夠具有~0.1微米至10微米解析度。在一實施例中,微影裝置能夠具有50奈米疊對,例如,100奈米疊對、200奈米疊對或300奈米疊對。在一實施例中,微影裝置能夠具有500奈米疊對,例如,400奈米疊對、300奈米疊對或200奈米疊對。此等疊對值及解析度值可無關於基板大小及材料。In an embodiment, the lithography apparatus can have a super-non-critical application. In an embodiment, the lithography apparatus can have 0.1 micron resolution, for example, 0.5 micron resolution or 1 micron resolution. In an embodiment, the lithography apparatus can have 20 micron resolution, for example, 10 micron resolution or 5 micron resolution. In an embodiment, the lithography apparatus can have a resolution of from ~0.1 microns to 10 microns. In an embodiment, the lithography apparatus can have 50 nm stack, for example, 100 nm stack, 200 nm stack or 300 nm stack. In an embodiment, the lithography apparatus can have 500 nm stack, for example, 400 nm stack, 300 nm stack or 200 nm stack. These stacking values and resolution values may be independent of substrate size and material.

在一實施例中,微影裝置係高度可撓性的。在一實施例中,微影裝置對於不同大小、類型及特性之基板係可按比例調整的。在一實施例中,微影裝置具有虛擬無限場大小。因此,微影裝置可以單一微影裝置或使用多個微影裝置(使用很大程度上共同的微影裝置平台)來實現多個應用(例如,IC、平板顯示器、封裝,等等)。在一實施例中,微影裝置允許自動化工作產生以提供可撓性製造。在一實施例中,微影裝置提供3D整合。In an embodiment, the lithography apparatus is highly flexible. In one embodiment, the lithography apparatus is scalable for substrates of different sizes, types, and characteristics. In an embodiment, the lithography apparatus has a virtual infinite field size. Thus, the lithography apparatus can implement multiple applications (eg, ICs, flat panel displays, packages, etc.) using a single lithography apparatus or using multiple lithography apparatus (using a largely common lithography apparatus platform). In an embodiment, the lithography apparatus allows automated work to be produced to provide flexible manufacturing. In an embodiment, the lithography apparatus provides 3D integration.

在一實施例中,微影裝置係低成本的。在一實施例中,僅使用普通的現成組件(例如,輻射發射二極體、簡單可移動基板固持器,及透鏡陣列)。在一實施例中,使用像素柵格成像以實現簡單投影光學器件。在一實施例中,使用具有單一掃描方向之基板固持器以減少成本及/或減少複雜度。In an embodiment, the lithography apparatus is low cost. In one embodiment, only conventional off-the-shelf components (eg, radiation emitting diodes, simple movable substrate holders, and lens arrays) are used. In an embodiment, pixel grid imaging is used to implement simple projection optics. In one embodiment, a substrate holder having a single scan orientation is used to reduce cost and/or reduce complexity.

圖1示意性地描繪根據本發明之一實施例的微影投影裝置100。裝置100包括圖案化元件104、物件固持器106(例如,物件台(例如,基板台)),及投影系統108。FIG. 1 schematically depicts a lithographic projection apparatus 100 in accordance with an embodiment of the present invention. Device 100 includes a patterning element 104, an object holder 106 (eg, an object table (eg, a substrate table)), and a projection system 108.

在一實施例中,圖案化元件104包含複數個個別可控制器件102,以調變輻射以將圖案施加至光束110。在一實施例中,複數個個別可控制器件102之位置可相對於投影系統108係固定的。然而,在一替代配置中,可將複數個個別可控制器件102連接至一定位元件(圖中未繪示),以根據特定參數來準確地定位該等個別可控制器件中之一或多者(例如,相對於投影系統108)。In an embodiment, the patterning element 104 includes a plurality of individual controllable devices 102 to modulate the radiation to apply a pattern to the beam 110. In one embodiment, the positions of the plurality of individual controllable devices 102 can be fixed relative to the projection system 108. However, in an alternative configuration, a plurality of individual controllable devices 102 can be coupled to a positioning component (not shown) to accurately position one or more of the individually controllable devices based on particular parameters. (eg, relative to projection system 108).

在一實施例中,圖案化元件104為自發射對比元件。此圖案化元件104消除針對輻射系統之需要,此情形可減少(例如)微影裝置之成本及大小。舉例而言,個別可控制器件102中之每一者為一輻射發射二極體,諸如發光二極體(LED)、有機LED(OLED)、聚合物LED(PLED)或雷射二極體(例如,固態雷射二極體)。在一實施例中,個別可控制器件102中之每一者為一雷射二極體。在一實施例中,個別可控制器件102中之每一者為一藍紫色雷射二極體(例如,Sanyo型號DL-3146-151)。此等二極體係藉由諸如Sanyo、Nichia、Osram及Nitride之公司供應。在一實施例中,二極體發射具有約365奈米或約405奈米之波長的輻射。在一實施例中,二極體可提供選自0.5毫瓦特至100毫瓦特之範圍的輸出功率。在一實施例中,雷射二極體(裸晶粒)之大小係選自250微米至600微米之範圍。在一實施例中,雷射二極體具有選自1微米至5微米之範圍的發射區域。在一實施例中,雷射二極體具有選自7度至44度之範圍的發散角。在一實施例中,圖案化元件104具有約1×105 個二極體,該等二極體具有用以提供大於或等於約6.4×108 W/(m2 .sr)之總亮度的組態(例如,發射區域、發散角、輸出功率,等等)。In an embodiment, the patterned element 104 is a self-emissive contrast element. This patterning element 104 eliminates the need for a radiation system that can reduce, for example, the cost and size of the lithography apparatus. For example, each of the individually controllable devices 102 is a radiation emitting diode such as a light emitting diode (LED), an organic LED (OLED), a polymer LED (PLED), or a laser diode ( For example, solid state laser diodes). In one embodiment, each of the individually controllable devices 102 is a laser diode. In one embodiment, each of the individually controllable devices 102 is a blue-violet laser diode (eg, Sanyo Model DL-3146-151). These two-pole systems are supplied by companies such as Sanyo, Nichia, Osram and Nitride. In an embodiment, the diode emits radiation having a wavelength of about 365 nanometers or about 405 nanometers. In an embodiment, the diode can provide an output power selected from the range of 0.5 milliwatts to 100 milliwatts. In one embodiment, the size of the laser diode (bare die) is selected from the range of 250 microns to 600 microns. In an embodiment, the laser diode has an emission region selected from the range of 1 micrometer to 5 micrometers. In an embodiment, the laser diode has a divergence angle selected from the range of 7 degrees to 44 degrees. In one embodiment, the patterned element 104 has about 1 x 10 5 diodes having a total brightness to provide greater than or equal to about 6.4 x 10 8 W/(m 2 .sr). Configuration (eg, emission area, divergence angle, output power, etc.).

在一實施例中,自發射對比元件包含比所需要之個別可定址器件更多的個別可定址器件102,以在另一個別可控制器件102未能操作或未適當地操作時允許使用「冗餘」個別可控制器件102。在一實施例中,可在使用(例如)下文關於圖5所論述之可移動個別可控制器件102的實施例中有利地使用冗餘個別可控制器件。In one embodiment, the self-emissive contrast element includes more individual addressable devices 102 than the individual addressable devices required to allow for redundancy when another controllable device 102 fails to operate or is not properly operated. The individual controllable device 102. In an embodiment, redundant individual controllable devices may be advantageously employed in embodiments that use, for example, the movable individually controllable device 102 discussed below with respect to FIG.

在一實施例中,自發射對比元件之個別可控制器件102係在個別可控制器件102之功率/前向電流曲線之陡峭部分中操作(例如,雷射二極體)。此情形可更有效率且導致更少功率消耗/熱。在一實施例中,當在使用中時,每個別可控制器件之光學輸出為至少1毫瓦特,例如,至少10毫瓦特、至少25毫瓦特、至少50毫瓦特、至少100毫瓦特或至少200毫瓦特。在一實施例中,當在使用中時,每個別可控制器件之光學輸出小於300毫瓦特、小於250毫瓦特、小於200毫瓦特、小於150毫瓦特、小於100毫瓦特、小於50毫瓦特、小於25毫瓦特或小於10毫瓦特。在一實施例中,當在使用中時,用以操作個別可控制器件的每可程式化圖案化元件之功率消耗小於10千瓦特,例如,小於5千瓦特、小於1千瓦特或小於0.5千瓦特。在一實施例中,當在使用中時,用以操作個別可控制器件的每可程式化圖案化元件之功率消耗為至少100瓦特,例如,至少300瓦特、至少500瓦特或至少1千瓦特。In one embodiment, the individual controllable devices 102 of the self-emissive contrast element operate in a steep portion of the power/forward current curve of the individual controllable device 102 (eg, a laser diode). This situation can be more efficient and results in less power consumption/heat. In one embodiment, each of the other controllable devices has an optical output of at least 1 milliwatt, such as at least 10 milliwatts, at least 25 milliwatts, at least 50 milliwatts, at least 100 milliwatts, or at least 200, when in use. Milliwatts. In one embodiment, each of the other controllable devices has an optical output of less than 300 milliwatts, less than 250 milliwatts, less than 200 milliwatts, less than 150 milliwatts, less than 100 milliwatts, less than 50 milliwatts, when in use. Less than 25 milliwatts or less than 10 milliwatts. In one embodiment, the power consumption per programmable patterning element used to operate the individually controllable device when in use is less than 10 kilowatts, for example, less than 5 kilowatts, less than 1 kilowatt, or less than 0.5 kilowatts. special. In one embodiment, each programmable patterning element used to operate the individually controllable device consumes at least 100 watts of power, for example, at least 300 watts, at least 500 watts, or at least 1 kilowatt, when in use.

微影裝置100包含物件固持器106。在此實施例中,該物件固持器包含物件台106以固持基板114(例如,抗蝕劑塗佈矽晶圓或玻璃基板)。物件台106可為可移動的,且連接至定位元件116以根據特定參數來準確地定位基板114。舉例而言,定位元件116可相對於投影系統108及/或圖案化元件104準確地定位基板114。在一實施例中,可用包含未在圖1中被明確地描繪之長衝程模組(粗略定位)及(視情況)短衝程模組(精細定位)的定位元件116實現物件台106之移動。在一實施例中,裝置至少不存在用以移動物件台106之短衝程模組。可使用類似系統以定位個別可控制器件102。應瞭解,或者/另外,光束110可為可移動的,而物件台106及/或個別可控制器件102可具有固定位置以提供所需相對移動。此配置可輔助限制裝置之大小。在可(例如)適用於平板顯示器之製造中的實施例中,物件台106可為靜止的,且定位元件116經組態以相對於(例如,遍及)物件台106移動基板114。舉例而言,物件台106可具備用以橫越基板114以實質上恆定速度掃描基板114之系統。在進行此過程時,物件台106可在平坦最上部表面上具備眾多開口,氣體被饋入通過該等開口以提供能夠支撐基板114之氣墊(gas cushion)。此氣墊通常被稱作氣體軸承配置(gas bearing arrangement)。使用一或多個致動器(圖中未繪示)而遍及物件台106移動基板114,該一或多個致動器能夠相對於光束110之路徑準確地定位基板114。或者,可藉由選擇性地開始及停止氣體通過開口之傳遞而相對於物件台106移動基板114。在一實施例中,物件固持器106可為供捲動基板之捲軸系統(roll system),且定位元件116可為用以轉動捲軸系統以將基板提供至物件台106上之馬達。The lithography apparatus 100 includes an object holder 106. In this embodiment, the article holder includes an object table 106 to hold the substrate 114 (eg, a resist coated wafer or glass substrate). The article table 106 can be movable and coupled to the positioning element 116 to accurately position the substrate 114 in accordance with certain parameters. For example, the positioning element 116 can accurately position the substrate 114 relative to the projection system 108 and/or the patterned element 104. In one embodiment, movement of the article table 106 can be accomplished with positioning elements 116 that include long stroke modules (rough positioning) and (as appropriate) short stroke modules (fine positioning) that are not explicitly depicted in FIG. In one embodiment, the device has at least no short stroke modules for moving the article table 106. A similar system can be used to locate the individual controllable devices 102. It will be appreciated that, or in addition, the beam 110 can be movable, while the article table 106 and/or the individual controllable device 102 can have a fixed position to provide the desired relative movement. This configuration can help limit the size of the device. In embodiments that may be suitable, for example, in the manufacture of flat panel displays, the article table 106 may be stationary, and the positioning elements 116 are configured to move the substrate 114 relative to (eg, throughout) the object table 106. For example, the article table 106 can be provided with a system for scanning the substrate 114 at a substantially constant velocity across the substrate 114. During this process, the article table 106 can have a plurality of openings on the flat uppermost surface through which gas is fed to provide a gas cushion capable of supporting the substrate 114. This air cushion is often referred to as a gas bearing arrangement. The substrate 114 is moved throughout the object table 106 using one or more actuators (not shown) that are capable of accurately positioning the substrate 114 relative to the path of the beam 110. Alternatively, the substrate 114 can be moved relative to the article table 106 by selectively starting and stopping the transfer of gas through the opening. In one embodiment, the article holder 106 can be a roll system for scrolling the substrate, and the positioning member 116 can be a motor for rotating the reel system to provide the substrate to the object table 106.

投影系統108(例如,石英及/或CaF2 透鏡系統或包含由此等材料製成之透鏡器件的反射折射系統,或鏡面系統)可用以將藉由個別可控制器件102調變之經圖案化光束投影至基板114之目標部分120(例如,一或多個晶粒)上。投影系統108可對藉由複數個個別可控制器件102提供之圖案進行投影成像,使得將圖案相干地形成於基板114上。或者,投影系統108可投影次級源之影像,對於該等次級源,複數個個別可控制器件102之器件擔當遮光片。Projection system 108 (eg, a quartz and/or CaF 2 lens system or a catadioptric system comprising lens devices made of such materials, or a mirror system) can be used to pattern the modulation by individual controllable devices 102 The beam is projected onto a target portion 120 (eg, one or more dies) of the substrate 114. Projection system 108 can image the pattern provided by a plurality of individual controllable devices 102 such that the pattern is coherently formed on substrate 114. Alternatively, projection system 108 can project an image of a secondary source for which a plurality of devices of individually controllable device 102 act as a light shield.

在此方面,投影系統可包含一聚焦器件或複數個聚焦器件(在本文中一般地被稱作透鏡陣列),例如,微透鏡陣列(被稱作MLA)或菲涅耳(Fresnel)透鏡陣列,例如,以形成次級源且將光點成像至基板114上。在一實施例中,透鏡陣列(例如,MLA)包含至少10個聚焦器件,例如,至少100個聚焦器件、至少1,000個聚焦器件、至少10,000個聚焦器件、至少100,000個聚焦器件,或至少1,000,000個聚焦器件。在一實施例中,圖案化元件中之個別可控制器件的數目等於或大於透鏡陣列中之聚焦器件的數目。在一實施例中,透鏡陣列包含一聚焦器件,該聚焦器件係與個別可控制器件陣列中之個別可控制器件中之一或多者光學地相關聯,例如,僅與個別可控制器件陣列中之個別可控制器件中之一者光學地相關聯,或與個別可控制器件陣列中之個別可控制器件中之2者或2者以上(例如,3者或3者以上、5者或5者以上、10者或10者以上、20者或20者以上、25者或25者以上、35者或35者以上,或50者或50者以上)光學地相關聯;在一實施例中,該聚焦器件係與5,000個以下個別可控制器件(例如,2,500個以下、1,000個以下、500個以下或100個以下)光學地相關聯。在一實施例中,透鏡陣列包含一個以上聚焦器件(例如,1,000個以上、大多數或約全部),該一個以上聚焦器件係與個別可控制器件陣列中之個別可控制器件中之一或多者光學地相關聯。In this aspect, the projection system can include a focusing device or a plurality of focusing devices (generally referred to herein as lens arrays), such as a microlens array (referred to as MLA) or a Fresnel lens array, For example, to form a secondary source and image the spot onto the substrate 114. In an embodiment, the lens array (eg, MLA) comprises at least 10 focusing devices, eg, at least 100 focusing devices, at least 1,000 focusing devices, at least 10,000 focusing devices, at least 100,000 focusing devices, or at least 1,000,000 Focus on the device. In an embodiment, the number of individual controllable devices in the patterned elements is equal to or greater than the number of focusing devices in the lens array. In one embodiment, the lens array includes a focusing device that is optically associated with one or more of the individual controllable devices in the array of individually controllable devices, for example, only in an array of individually controllable devices One of the individual controllable devices is optically associated, or with 2 or more of the individual controllable devices in the array of individually controllable devices (eg, 3 or more, 5 or 5) 10 or more, 10 or more, 20 or 20 or more, 25 or 25 or more, 35 or 35 or more, or 50 or more are optically associated; in an embodiment, The focusing device is optically associated with less than 5,000 individual controllable devices (eg, 2,500 or less, 1,000 or less, 500 or less, or 100 or less). In one embodiment, the lens array includes more than one focusing device (eg, more than 1,000, most, or all), one or more of the one or more focusing devices and individual controllable devices in the array of individually controllable devices They are optically related.

在一實施例中,透鏡陣列係(例如)藉由使用一或多個致動器而至少在至及遠離基板之方向上可移動。能夠將透鏡陣列移動至及遠離基板會允許(例如)在不必移動基板的情況下進行聚焦調整。在一實施例中,透鏡陣列中之個別透鏡器件(例如,透鏡陣列中之每一個別透鏡器件)係至少在至及遠離基板之方向上可移動(例如,用於在非平坦基板上之局域聚焦調整或用以將每一光學圓柱帶入至相同聚焦距離中)。In one embodiment, the lens array is movable, for example, at least in a direction to and from the substrate by using one or more actuators. Being able to move the lens array to and away from the substrate allows for focus adjustment, for example, without having to move the substrate. In one embodiment, individual lens devices in the lens array (eg, each individual lens device in the lens array) are movable at least in a direction to and from the substrate (eg, for use on a non-planar substrate) Domain focus adjustment or to bring each optical cylinder into the same focus distance).

在一實施例中,透鏡陣列包含塑膠聚焦器件(該等塑膠聚焦器件可易於製造(例如,射出成形)及/或係可負擔得起的),其中(例如)輻射之波長大於或等於約400奈米(例如,405奈米)。在一實施例中,輻射之波長係選自約400奈米至500奈米之範圍。在一實施例中,透鏡陣列包含石英聚焦器件。在一實施例中,該等聚焦器件中之每一者或複數者可為不對稱透鏡。不對稱性可對於複數個聚焦器件中之每一者係相同的,或可對於複數個聚焦器件中之一或多個聚焦器件相較於對於複數個聚焦器件中之一或多個不同聚焦器件係不同的。不對稱透鏡可促進將卵圓形輻射輸出轉換成圓形投影光點,或將圓形投影光點轉換成卵圓形輻射輸出。In one embodiment, the lens array comprises plastic focusing devices (which may be easily fabricated (eg, injection molded) and/or affordable), wherein, for example, the wavelength of the radiation is greater than or equal to about 400 Nano (for example, 405 nm). In one embodiment, the wavelength of the radiation is selected from the range of from about 400 nanometers to about 500 nanometers. In an embodiment, the lens array comprises a quartz focusing device. In an embodiment, each or a plurality of the focusing devices may be an asymmetrical lens. The asymmetry may be the same for each of the plurality of focusing devices, or may be for one or more focusing devices of the plurality of focusing devices as compared to one or more different focusing devices for the plurality of focusing devices Different. The asymmetrical lens can facilitate the conversion of the oval radiation output into a circular projection spot or the conversion of a circular projection spot into an oval radiation output.

在一實施例中,聚焦器件具有高數值孔徑(NA),高NA經配置以在焦點外將輻射投影至基板上以獲得系統之低NA。更高NA透鏡相較於可購得之低NA透鏡可為更經濟、更普遍及/或品質更好。在一實施例中,低NA小於或等於0.3,在一實施例中為0.18、0.15或0.15以下。因此,更高NA透鏡具有大於系統之設計NA的NA,例如,大於0.3、大於0.18或大於0.15。In an embodiment, the focusing device has a high numerical aperture (NA) that is configured to project radiation onto the substrate outside of the focus to obtain a low NA of the system. Higher NA lenses may be more economical, more general, and/or better quality than commercially available low NA lenses. In one embodiment, the low NA is less than or equal to 0.3, and in one embodiment is 0.18, 0.15, or 0.15 or less. Thus, a higher NA lens has an NA greater than the design NA of the system, for example, greater than 0.3, greater than 0.18, or greater than 0.15.

雖然在一實施例中投影系統108係與圖案化元件104分離,但無需如此。投影系統108可與圖案化元件108成整體。舉例而言,透鏡陣列區塊或板可附接至圖案化元件104(與圖案化元件104成整體)。在一實施例中,透鏡陣列可以個別空間分離小透鏡之形式,每一小透鏡附接至圖案化元件104之個別可定址器件(與圖案化元件104之個別可定址器件成整體),如下文更詳細地所論述。Although the projection system 108 is separate from the patterning element 104 in one embodiment, this need not be the case. Projection system 108 can be integral with patterned element 108. For example, a lens array block or plate can be attached to the patterned element 104 (integral with the patterned element 104). In an embodiment, the lens arrays may be in the form of individual spatially separated lenslets, each lenslet being attached to an individually addressable device of patterned element 104 (integral with an individually addressable device of patterned element 104), as follows Discussed in more detail.

視情況,微影裝置可包含輻射系統以將輻射(例如,紫外線(UV)輻射)供應至複數個個別可控制器件102。若圖案化元件為輻射源自身(例如,雷射二極體陣列或LED陣列),則微影裝置可經設計成無輻射系統,亦即,無除了圖案化元件自身以外之輻射源,或至少無簡化輻射系統。Optionally, the lithography apparatus can include a radiation system to supply radiation (eg, ultraviolet (UV) radiation) to a plurality of individual controllable devices 102. If the patterned element is the radiation source itself (eg, a laser diode array or an LED array), the lithography device can be designed to be a radiation-free system, ie, without a radiation source other than the patterned element itself, or at least No simplified radiation system.

輻射系統包括經組態以自輻射源接收輻射之照明系統(照明器)。照明系統包括以下器件中之一或多者:輻射傳送系統(例如,適當引導鏡面);輻射調節元件(例如,光束擴展器);調整元件,其用以設定輻射之角強度分佈(通常,可調整照明器之光瞳平面中之強度分佈的至少外部徑向範圍及/或內部徑向範圍(通常分別被稱作σ外部及σ內部));積光器;及/或聚光器。照明系統可用以調節將提供至個別可控制器件102之輻射,以在輻射之橫截面中具有所要均一性及強度分佈。照明系統可經配置以將輻射劃分成複數個子光束,該等子光束可(例如)各自與複數個個別可控制器件中之一或多者相關聯。二維繞射光柵可(例如)用以將輻射劃分成子光束。在本描述中,術語「輻射光束」涵蓋(但不限於)光束包含複數個此等輻射子光束之情形。The radiation system includes an illumination system (illuminator) configured to receive radiation from a radiation source. The illumination system includes one or more of the following: a radiation delivery system (eg, a suitable guiding mirror); a radiation conditioning component (eg, a beam expander); an adjustment component that sets the angular intensity distribution of the radiation (typically, Adjusting at least an outer radial extent and/or an inner radial extent (commonly referred to as σ outer and σ inner) of the intensity distribution in the pupil plane of the illuminator; an optical concentrator; and/or a concentrator. The illumination system can be used to adjust the radiation to be provided to the individual controllable devices 102 to have a desired uniformity and intensity distribution in the cross section of the radiation. The illumination system can be configured to divide the radiation into a plurality of sub-beams, which can each, for example, be associated with one or more of a plurality of individual controllable devices. A two-dimensional diffraction grating can be used, for example, to divide radiation into sub-beams. In the present description, the term "radiation beam" encompasses, but is not limited to, the case where the beam contains a plurality of such radiation sub-beams.

輻射系統亦可包括輻射源(例如,準分子雷射),以產生用於供應至複數個個別可控制器件102或藉由複數個個別可控制器件102供應之輻射。舉例而言,當輻射源為準分子雷射時,輻射源與微影裝置100可為分離實體。在此等情況下,不認為輻射源形成微影裝置100之部分,且輻射係自輻射源傳遞至照明器。在其他情況下,例如,當輻射源為水銀燈時,輻射源可為微影裝置100之整體部分。應瞭解,在本發明之範疇內預期兩種此等情景。The radiation system can also include a radiation source (e.g., an excimer laser) to generate radiation for supply to a plurality of individual controllable devices 102 or by a plurality of individual controllable devices 102. For example, when the radiation source is a quasi-molecular laser, the radiation source and lithography apparatus 100 can be separate entities. In such cases, the source of radiation is not considered to form part of the lithography apparatus 100, and the radiation is transmitted from the source of radiation to the illuminator. In other cases, for example, when the source of radiation is a mercury lamp, the source of radiation may be an integral part of the lithography apparatus 100. It should be understood that two such scenarios are contemplated within the scope of the present invention.

在一實施例中,輻射源(其在一實施例中可為複數個個別可控制器件102)可提供具有至少5奈米之波長的輻射,例如,波長為至少10奈米、至少50奈米、至少100奈米、至少150奈米、至少175奈米、至少200奈米、至少250奈米、至少275奈米、至少300奈米、至少325奈米、至少350奈米或至少360奈米。在一實施例中,輻射具有至多450奈米之波長,例如,波長為至多425奈米、至多375奈米、至多360奈米、至多325奈米、至多275奈米、至多250奈米、至多225奈米、至多200奈米或至多175奈米。在一實施例中,輻射具有包括436奈米、405奈米、365奈米、355奈米、248奈米、193奈米、157奈米、126奈米及/或13.5奈米之波長。在一實施例中,輻射包括大約365奈米或大約355奈米之波長。在一實施例中,輻射包括寬波長頻帶,例如,涵蓋365奈米、405奈米及436奈米。可使用355奈米雷射源。在一實施例中,輻射具有約405奈米之波長。In an embodiment, the radiation source (which in one embodiment may be a plurality of individual controllable devices 102) may provide radiation having a wavelength of at least 5 nanometers, for example, a wavelength of at least 10 nanometers, at least 50 nanometers. At least 100 nm, at least 150 nm, at least 175 nm, at least 200 nm, at least 250 nm, at least 275 nm, at least 300 nm, at least 325 nm, at least 350 nm or at least 360 nm . In one embodiment, the radiation has a wavelength of up to 450 nm, for example, a wavelength of at most 425 nm, at most 375 nm, at most 360 nm, at most 325 nm, at most 275 nm, at most 250 nm, at most 225 nm, up to 200 nm or up to 175 nm. In one embodiment, the radiation has a wavelength comprising 436 nm, 405 nm, 365 nm, 355 nm, 248 nm, 193 nm, 157 nm, 126 nm, and/or 13.5 nm. In an embodiment, the radiation comprises a wavelength of about 365 nanometers or about 355 nanometers. In an embodiment, the radiation comprises a wide wavelength band, for example, covering 365 nm, 405 nm, and 436 nm. A 355 nm laser source can be used. In one embodiment, the radiation has a wavelength of about 405 nm.

在一實施例中,以在0°與90°之間(例如,在5°與85°之間、在15°與75°之間、在25°與65°之間,或在35°與55°之間)的角度將輻射自照明系統引導於圖案化元件104處。可將來自照明系統之輻射直接提供至圖案化元件104。在一替代實施例中,可藉由光束分裂器(圖中未繪示)將輻射自照明系統引導至圖案化元件104,光束分裂器經組態成使得最初藉由光束分裂器反射輻射且將輻射引導至圖案化元件104。圖案化元件104調變光束且將光束反射回至光束分裂器,光束分裂器將經調變光束透射朝向基板114。然而,應瞭解,可使用替代配置以將輻射引導至圖案化元件104且隨後引導至基板114。詳言之,若使用透射圖案化元件104(例如,LCD陣列)或圖案化元件104係自發射的(例如,複數個二極體),則可能不需要照明系統配置。In one embodiment, between 0° and 90° (eg, between 5° and 85°, between 15° and 75°, between 25° and 65°, or at 35°) The angle between 55° directs radiation from the illumination system to the patterned element 104. Radiation from the illumination system can be provided directly to the patterning element 104. In an alternative embodiment, the radiation can be directed from the illumination system to the patterning element 104 by a beam splitter (not shown) that is configured such that the beam is initially reflected by the beam splitter and will Radiation is directed to the patterning element 104. The patterning element 104 modulates the beam and reflects the beam back to the beam splitter, which transmits the modulated beam toward the substrate 114. However, it should be appreciated that alternative configurations can be used to direct radiation to the patterned element 104 and then to the substrate 114. In particular, if a transmissive patterned element 104 (eg, an LCD array) or patterned element 104 is self-emissive (eg, a plurality of diodes), a lighting system configuration may not be required.

在微影裝置100之操作中(其中圖案化元件104不係輻射發射的(例如,包含LED)),輻射係自輻射系統(照明系統及/或輻射源)入射於圖案化元件104(例如,複數個個別可控制器件)上,且係藉由圖案化元件104調變。經圖案化光束110在已藉由複數個個別可控制器件102產生之後傳遞通過投影系統108,投影系統108將光束110聚焦至基板114之目標部分120上。In operation of the lithography apparatus 100 (where the patterned element 104 is not radiation-emitting (eg, including LEDs)), the radiation is incident on the patterned element 104 from a radiation system (illumination system and/or radiation source) (eg, A plurality of individual controllable devices are on the basis of modulation by the patterning element 104. The patterned beam 110 is passed through the projection system 108 after it has been generated by the plurality of individually controllable devices 102, and the projection system 108 focuses the beam 110 onto the target portion 120 of the substrate 114.

憑藉定位元件116(及(視情況)在基座136上之位置感測器134(例如,接收干涉量測光束138之干涉量測元件、線性編碼器或電容性感測器)),可準確地移動基板114,例如,以使不同目標部分120定位於光束110之路徑中。在使用時,用於複數個個別可控制器件102之定位元件可用以(例如)在掃描期間準確地校正複數個個別可控制器件102相對於光束110之路徑的位置。By means of the positioning element 116 (and (as appropriate) the position sensor 134 on the base 136 (eg, an interferometric measuring element that receives the interferometric measuring beam 138, a linear encoder or a capacitive sensor), The substrate 114 is moved, for example, to position different target portions 120 in the path of the beam 110. In use, the positioning elements for the plurality of individually controllable devices 102 can be used to accurately correct the position of the plurality of individually controllable devices 102 relative to the path of the beam 110, for example, during scanning.

儘管本文中將根據本發明之一實施例的微影裝置100描述為用於曝光基板上之抗蝕劑,但應瞭解,裝置100可用以投影經圖案化光束110以供在無抗蝕劑微影中使用。Although lithography apparatus 100 in accordance with an embodiment of the present invention is described herein as being used to expose a resist on a substrate, it will be appreciated that apparatus 100 can be used to project patterned light beam 110 for use in resistless micro-resistance. Used in the movie.

如此處所描繪,微影裝置100為反射類型(例如,使用反射個別可控制器件)。或者,裝置可為透射類型(例如,使用透射個別可控制器件)。As depicted herein, the lithography apparatus 100 is of a reflective type (eg, using reflective individually controllable devices). Alternatively, the device can be of a transmissive type (eg, using a transmissive individually controllable device).

所描繪裝置100可用於一或多個模式中,例如:The depicted device 100 can be used in one or more modes, such as:

1.在步進模式中,在將整個經圖案化輻射光束110一次性投影至目標部分120上時,使個別可控制器件102及基板114保持基本上靜止(亦即,單次靜態曝光)。接著,使基板114在X及/或Y方向上移位,使得可將不同目標部分120曝光至經圖案化輻射光束110。在步進模式中,曝光場之最大大小限制單次靜態曝光中所成像之目標部分120的大小。1. In the step mode, when the entire patterned radiation beam 110 is projected onto the target portion 120 at a time, the individual controllable devices 102 and substrate 114 are maintained substantially stationary (i.e., a single static exposure). Next, the substrate 114 is displaced in the X and/or Y direction such that different target portions 120 can be exposed to the patterned radiation beam 110. In step mode, the maximum size of the exposure field limits the size of the target portion 120 imaged in a single static exposure.

2.在掃描模式中,在將經圖案化輻射光束110投影至目標部分120上時,同步地掃描個別可控制器件102及基板114(亦即,單次動態曝光)。可藉由投影系統PS之放大率(縮小率)及影像反轉特性來判定基板相對於個別可控制器件之速度及方向。在掃描模式中,曝光場之最大大小限制單次動態曝光中之目標部分的寬度(在非掃描方向上),而掃描運動之長度判定目標部分之高度(在掃描方向上)。2. In the scan mode, upon projecting the patterned radiation beam 110 onto the target portion 120, the individual controllable devices 102 and the substrate 114 (i.e., a single dynamic exposure) are scanned synchronously. The speed and direction of the substrate relative to the individually controllable device can be determined by the magnification (reduction ratio) and image reversal characteristics of the projection system PS. In the scan mode, the maximum size of the exposure field limits the width of the target portion in a single dynamic exposure (in the non-scanning direction), and the length of the scanning motion determines the height of the target portion (in the scanning direction).

3.在脈衝模式中,使個別可控制器件102保持基本上靜止,且使用脈動(例如,藉由脈衝式輻射源或藉由脈動個別可控制器件提供)而將整個圖案投影至基板114之目標部分120上。以基本上恆定速率移動基板114,使得導致經圖案化光束110橫越基板114掃描一行(line)。在脈衝之間根據需要而更新藉由個別可控制器件提供之圖案且對脈衝進行時控,使得在基板114上之所需部位處曝光順次目標部分120。因此,經圖案化光束110可橫越基板114進行掃描以曝光用於基板114之條帶的完整圖案。重複該程序,直到已逐行曝光完整基板114為止。3. In the pulse mode, the individual controllable device 102 is held substantially stationary and the entire pattern is projected onto the substrate 114 using pulsations (e.g., by pulsed radiation sources or by pulsing individual controllable devices). Part 120. The substrate 114 is moved at a substantially constant rate such that the patterned beam 110 is scanned across the substrate 114 to scan a line. The pattern provided by the individual controllable devices is updated between pulses as needed and the pulses are timed such that the sequential target portions 120 are exposed at desired locations on the substrate 114. Thus, the patterned beam 110 can be scanned across the substrate 114 to expose a complete pattern of strips for the substrate 114. This procedure is repeated until the entire substrate 114 has been exposed line by line.

4.在連續掃描模式中,與脈衝模式基本上相同,惟如下情形除外:相對於經調變輻射光束B以實質上恆定速率掃描基板114,且在經圖案化光束110橫越基板114進行掃描且曝光基板114時更新個別可控制器件陣列上之圖案。可使用經同步於個別可控制器件陣列上之圖案之更新的實質上恆定輻射源或脈衝式輻射源。4. In the continuous scan mode, substantially the same as the pulse mode, except that the substrate 114 is scanned at a substantially constant rate relative to the modulated radiation beam B, and the patterned beam 110 is scanned across the substrate 114. The pattern on the individual controllable device array is updated as the substrate 114 is exposed. An substantially constant or pulsed source of radiation that is synchronized to a pattern on an array of individually controllable devices can be used.

亦可使用對上文所描述之使用模式之組合及/或變化或完全不同的使用模式。Combinations and/or variations or completely different modes of use of the modes of use described above may also be used.

圖2描繪用於晶圓(例如,300毫米晶圓)的根據本發明之一實施例之微影裝置的示意性俯視圖。如圖2所示,微影裝置100包含基板台106以固持晶圓114。用以在至少X方向上移動基板台106之定位元件116係與基板台106相關聯。視情況,定位元件116可在Y方向及/或Z方向上移動基板台106。定位元件116亦可圍繞X方向、Y方向及/或Z方向旋轉基板台106。因此,定位元件116可提供在高達6個自由度中之運動。在一實施例中,基板台106提供僅在X方向上之運動,此情形之優點為更低成本及更少複雜度。在一實施例中,基板台106包含中繼光學器件。2 depicts a schematic top view of a lithography apparatus in accordance with an embodiment of the present invention for a wafer (eg, a 300 mm wafer). As shown in FIG. 2, the lithography apparatus 100 includes a substrate stage 106 to hold the wafer 114. A positioning element 116 for moving the substrate stage 106 in at least the X direction is associated with the substrate stage 106. Depending on the situation, the positioning element 116 can move the substrate stage 106 in the Y and/or Z direction. The positioning element 116 can also rotate the substrate stage 106 about the X direction, the Y direction, and/or the Z direction. Thus, the positioning element 116 can provide motion in up to 6 degrees of freedom. In one embodiment, substrate stage 106 provides motion only in the X direction, which has the advantage of lower cost and less complexity. In an embodiment, substrate stage 106 includes relay optics.

微影裝置100進一步包含配置於框架160上之複數個個別可定址器件102。框架160可與基板台106及其定位元件116機械地隔離。可(例如)藉由與用於基板台106及/或其定位元件116之框架160分離地將框架160連接至地面或牢固基座來提供機械隔離。或者或此外,可在框架160與框架160被連接至之結構之間提供阻尼器,而無論該結構是地面、牢固基座或是支撐基板台106及/或其定位元件116之框架。The lithography apparatus 100 further includes a plurality of individual addressable devices 102 disposed on the frame 160. The frame 160 can be mechanically isolated from the substrate table 106 and its positioning elements 116. Mechanical isolation can be provided, for example, by attaching the frame 160 to the ground or a secure base separately from the frame 160 for the substrate table 106 and/or its positioning elements 116. Alternatively or in addition, a damper may be provided between the frame 160 and the structure to which the frame 160 is coupled, whether the structure is a floor, a solid base, or a frame that supports the substrate table 106 and/or its positioning elements 116.

在此實施例中,個別可定址器件102中之每一者為一輻射發射二極體,例如,藍紫色雷射二極體。如圖2所示,可將個別可定址器件102配置成沿著Y方向延伸之至少3個分離個別可定址器件102陣列。在一實施例中,個別可定址器件102陣列係在X方向上與鄰近個別可定址器件102陣列交錯。微影裝置100(特別為個別可定址器件102)可經配置以提供本文中更詳細地所描述之像素柵格成像。In this embodiment, each of the individual addressable devices 102 is a radiation emitting diode, such as a blue-violet laser diode. As shown in FIG. 2, the individual addressable devices 102 can be configured as an array of at least three separate individually addressable devices 102 extending in the Y direction. In one embodiment, the array of individual addressable devices 102 are interleaved with the array of adjacent individually addressable devices 102 in the X direction. The lithography apparatus 100 (particularly the individual addressable device 102) can be configured to provide pixel grid imaging as described in greater detail herein.

個別可定址器件102陣列中之每一者可為一個別光學引擎組件之部分,該陣列及該個別光學引擎組件可出於容易複製起見而被製造為一部件(unit)。此外,框架160可經組態為可擴展且可組態的,以容易採用任何數目個此等光學引擎組件。光學引擎組件可包含個別可定址器件102陣列與透鏡陣列170之組合(見(例如)圖8)。舉例而言,在圖2中,描繪3個光學引擎組件(其中一關聯透鏡陣列170處於每一各別個別可定址器件102陣列下方)。因此,在一實施例中,可提供多圓柱光學配置,其中每一光學引擎形成一圓柱。Each of the arrays of individually addressable devices 102 can be part of a separate optical engine assembly that can be fabricated as a unit for ease of replication. Additionally, the framework 160 can be configured to be expandable and configurable to facilitate the use of any number of such optical engine components. The optical engine assembly can include a combination of an array of individual addressable devices 102 and a lens array 170 (see, for example, Figure 8). For example, in FIG. 2, three optical engine assemblies are depicted (with one associated lens array 170 below each individual individually addressable device 102 array). Thus, in an embodiment, a multi-cylindrical optical configuration can be provided in which each optical engine forms a cylinder.

另外,微影裝置100包含對準感測器150。對準感測器係用以在曝光基板114之前及/或期間判定個別可定址器件102與基板114之間的對準。可藉由微影裝置100之控制器使用對準感測器150之結果以控制(例如)定位元件116,以定位基板台106以改良對準。或者或此外,控制器可控制(例如)與個別可定址器件102相關聯之定位元件,以定位個別可定址器件102中之一或多者以改良對準。在一實施例中,對準感測器150可包括用以執行對準之圖案辨識功能性/軟體。Additionally, the lithography apparatus 100 includes an alignment sensor 150. The alignment sensor is used to determine the alignment between the individual addressable device 102 and the substrate 114 before and/or during exposure of the substrate 114. The result of the alignment sensor 150 can be used by the controller of the lithography apparatus 100 to control, for example, the positioning element 116 to position the substrate stage 106 to improve alignment. Alternatively or in addition, the controller can control, for example, positioning elements associated with the individual addressable devices 102 to locate one or more of the individually addressable devices 102 to improve alignment. In an embodiment, the alignment sensor 150 can include a pattern recognition functionality/software to perform the alignment.

或者或此外,微影裝置100包含位階感測器(level sensor)150。位階感測器150係用以判定基板106是否位於相對於來自個別可定址器件102之圖案的投影之位階處。位階感測器150可在曝光基板114之前及/或期間判定位階。可藉由微影裝置100之控制器使用位階感測器150之結果以控制(例如)定位元件116,以定位基板台106以改良調平。或者或此外,控制器可控制(例如)與投影系統108(例如,透鏡陣列)相關聯之定位元件,以定位投影系統108(例如,透鏡陣列)之器件以改良調平。在一實施例中,位階感測器可藉由將超音波光束投影於基板106處進行操作,及/或藉由將電磁輻射光束投影於基板106處進行操作。Alternatively or in addition, the lithography apparatus 100 includes a level sensor 150. The level sensor 150 is used to determine whether the substrate 106 is at a level relative to the projection of the pattern from the individual addressable device 102. The level sensor 150 can determine the level before and/or during exposure of the substrate 114. The result of the level sensor 150 can be used by the controller of the lithography apparatus 100 to control, for example, the positioning element 116 to position the substrate stage 106 to improve leveling. Alternatively or in addition, the controller can control, for example, positioning elements associated with projection system 108 (e.g., lens arrays) to position devices of projection system 108 (e.g., lens arrays) to improve leveling. In one embodiment, the level sensor can be operated by projecting an ultrasonic beam onto the substrate 106 and/or by projecting a beam of electromagnetic radiation onto the substrate 106.

在一實施例中,可使用來自對準感測器及/或位階感測器之結果以更改藉由個別可定址器件102提供之圖案。可更改圖案以校正(例如)可由(例如)個別可定址器件102與基板114之間的光學器件(若存在)而引起的失真、基板114之定位中的不規則性、基板114之不均勻度,等等。因此,可使用來自對準感測器及/或位階感測器之結果以更改經投影圖案以實現非線性失真校正。非線性失真校正可有用於(例如)可能不具有一致線性或非線性失真之可撓性顯示器。In an embodiment, the results from the alignment sensor and/or the level sensor can be used to modify the pattern provided by the individual addressable device 102. The pattern can be modified to correct, for example, distortion caused by, for example, optics (if present) between the individual addressable device 102 and the substrate 114, irregularities in the positioning of the substrate 114, unevenness of the substrate 114 ,and many more. Thus, results from alignment sensors and/or level sensors can be used to modify the projected pattern to achieve nonlinear distortion correction. Nonlinear distortion correction can have flexible displays for, for example, that may not have consistent linear or nonlinear distortion.

在微影裝置100之操作中,使用(例如)機器人處置器(圖中未繪示)將基板114裝載至基板台106上。接著使基板114在框架160及個別可定址器件102下方於X方向上位移。藉由位階感測器及/或對準感測器150量測基板114,且接著使用個別可定址器件102將基板114曝光至圖案。舉例而言,經由投影系統108之焦平面(影像平面)掃描基板114,同時藉由圖案化元件104至少部分地開啟或完全地開啟或關閉子光束且因此至少部分地開啟或完全地開啟或關閉影像光點S(見(例如)圖12)。將對應於圖案化元件104之圖案的特徵形成於基板114上。可操作個別可定址器件102,例如,以提供本文中所論述之像素柵格成像。In operation of the lithography apparatus 100, the substrate 114 is loaded onto the substrate stage 106 using, for example, a robotic handler (not shown). Substrate 114 is then displaced in the X direction below frame 160 and individual addressable device 102. Substrate 114 is measured by level sensor and/or alignment sensor 150, and then substrate 114 is exposed to a pattern using individual addressable device 102. For example, the substrate 114 is scanned via the focal plane (image plane) of the projection system 108 while the sub-beams are at least partially turned on or off by the patterning element 104 and thus at least partially turned on or fully turned on or off. Image spot S (see, for example, Figure 12). Features corresponding to the pattern of the patterned elements 104 are formed on the substrate 114. The individual addressable device 102 can be operated, for example, to provide pixel grid imaging as discussed herein.

在一實施例中,可完全地在正X方向上掃描基板114,且接著完全地在負X方向上掃描基板114。在此實施例中,對於負X方向掃描,可能需要在個別可定址器件102之對置側上的額外位階感測器及/或對準感測器150。In an embodiment, the substrate 114 can be completely scanned in the positive X direction, and then the substrate 114 is scanned completely in the negative X direction. In this embodiment, for negative X-direction scanning, additional level sensors and/or alignment sensors 150 on opposite sides of the individual addressable device 102 may be required.

圖3描繪用於在(例如)平板顯示器(例如,LCD、OLED顯示器,等等)之製造中曝光基板的根據本發明之一實施例之微影裝置的示意性俯視圖。如同圖2所示之微影裝置100,微影裝置100包含:基板台106,基板台106係用以固持平板顯示器基板114;定位元件116,定位元件116係用以在高達6個自由度中移動基板台106;對準感測器150,對準感測器150係用以判定個別可定址器件102與基板114之間的對準;及位階感測器150,位階感測器150係用以判定基板114是否位於相對於來自個別可定址器件102之圖案的投影之位階處。3 depicts a schematic top view of a lithography apparatus in accordance with an embodiment of the present invention for exposing a substrate in the manufacture of, for example, a flat panel display (eg, an LCD, an OLED display, etc.). As with the lithography apparatus 100 shown in FIG. 2, the lithography apparatus 100 includes a substrate stage 106 for holding the flat panel display substrate 114, and a positioning component 116 for positioning up to six degrees of freedom. Moving the substrate table 106; aligning the sensor 150, the alignment sensor 150 is used to determine the alignment between the individual addressable device 102 and the substrate 114; and the level sensor 150, the level sensor 150 is used To determine if the substrate 114 is at a level relative to the projection from the pattern of individual addressable devices 102.

微影裝置100進一步包含配置於框架160上之複數個個別可定址器件102。在此實施例中,個別可定址器件102中之每一者為一輻射發射二極體,例如,藍紫色雷射二極體。如圖3所示,將個別可定址器件102配置成沿著Y方向延伸之數個(例如,至少8個)靜止分離個別可定址器件102陣列。在一實施例中,該等陣列實質上靜止,亦即,該等陣列在投影期間不會顯著地移動。另外,在一實施例中,數個個別可定址器件102陣列係在X方向上以交替方式與鄰近個別可定址器件102陣列交錯。微影裝置100(特別為個別可定址器件102)可經配置以提供像素柵格成像。The lithography apparatus 100 further includes a plurality of individual addressable devices 102 disposed on the frame 160. In this embodiment, each of the individual addressable devices 102 is a radiation emitting diode, such as a blue-violet laser diode. As shown in FIG. 3, the individual addressable devices 102 are configured as an array of several (eg, at least eight) statically separated individual addressable devices 102 extending in the Y direction. In an embodiment, the arrays are substantially stationary, that is, the arrays do not move significantly during projection. Additionally, in one embodiment, an array of individual addressable devices 102 are interleaved in an alternating pattern with adjacent arrays of individually addressable devices 102 in the X direction. The lithography apparatus 100 (particularly the individual addressable device 102) can be configured to provide pixel grid imaging.

在微影裝置100之操作中,使用(例如)機器人處置器(圖中未繪示)將平板顯示器基板114裝載至基板台106上。接著使基板114在框架160及個別可定址器件102下方於X方向上位移。藉由位階感測器及/或對準感測器150量測基板114,且接著使用個別可定址器件102將基板114曝光至圖案。可操作個別可定址器件102,例如,以提供本文中所論述之像素柵格成像。In operation of the lithography apparatus 100, the flat panel display substrate 114 is loaded onto the substrate stage 106 using, for example, a robotic handler (not shown). Substrate 114 is then displaced in the X direction below frame 160 and individual addressable device 102. Substrate 114 is measured by level sensor and/or alignment sensor 150, and then substrate 114 is exposed to a pattern using individual addressable device 102. The individual addressable device 102 can be operated, for example, to provide pixel grid imaging as discussed herein.

圖4描繪用於捲軸式可撓性顯示器/電子器件的根據本發明之一實施例之微影裝置的示意性俯視圖。如同圖3所示之微影裝置100,微影裝置100包含配置於框架160上之複數個個別可定址器件102。在此實施例中,個別可定址器件102中之每一者為一輻射發射二極體,例如,藍紫色雷射二極體。另外,微影裝置包含:對準感測器150,對準感測器150係用以判定個別可定址器件102與基板114之間的對準;及位階感測器150,位階感測器150係用以判定基板114是否位於相對於來自個別可定址器件102之圖案的投影之位階處。4 depicts a schematic top view of a lithography apparatus in accordance with an embodiment of the present invention for a roll-type flexible display/electronic device. Like the lithography apparatus 100 shown in FIG. 3, the lithography apparatus 100 includes a plurality of individual addressable devices 102 disposed on the frame 160. In this embodiment, each of the individual addressable devices 102 is a radiation emitting diode, such as a blue-violet laser diode. In addition, the lithography apparatus includes: an alignment sensor 150 for determining alignment between the individual addressable device 102 and the substrate 114; and a level sensor 150, the level sensor 150 It is used to determine whether the substrate 114 is at a level relative to the projection of the pattern from the individual addressable device 102.

微影裝置亦可包含具有物件台106之物件固持器,基板114係遍及物件台106而移動。基板114係可撓性的且捲動至連接至定位元件116之捲軸上,定位元件116可為用以轉動捲軸之馬達。在一實施例中,或者或此外,基板114可自連接至定位元件116之捲軸捲動,定位元件116可為用以轉動捲軸之馬達。在一實施例中,存在至少兩個捲軸,一捲軸係供基板自其捲動,且另一捲軸係供基板捲動至其上。在一實施例中,若(例如)基板114在該等捲軸之間足夠堅硬,則無需提供物件台106。在此情況下,仍將存在物件固持器,例如,一或多個捲軸。在一實施例中,微影裝置可提供無載體基板(例如,無載體箔片(carrier-less-foil,CLF))及/或捲軸式製造(roll to roll manufacturing)。在一實施例中,微影裝置可提供單片連續式製造(sheet to sheet manufacturing)。The lithography apparatus can also include an object holder having an object table 106 that moves throughout the object table 106. The substrate 114 is flexible and rolled onto a spool attached to the positioning element 116, which may be a motor for rotating the spool. In an embodiment, or in addition, the substrate 114 can be rolled from a reel attached to the positioning element 116, which can be a motor for rotating the reel. In one embodiment, there are at least two reels, one for the substrate to be rolled from, and the other for the substrate to be rolled onto. In an embodiment, if, for example, the substrate 114 is sufficiently rigid between the spools, there is no need to provide the article table 106. In this case, there will still be an object holder, for example one or more reels. In one embodiment, the lithography apparatus can provide a carrierless substrate (eg, carrier-less-foil (CLF)) and/or roll to roll manufacturing. In an embodiment, the lithography apparatus can provide sheet to sheet manufacturing.

在微影裝置100之操作中,在框架160及個別可定址器件102下方於X方向上將可撓性基板114捲動至捲軸上及/或自捲軸捲動可撓性基板114。藉由位階感測器及/或對準感測器150量測基板114,且接著使用個別可定址器件102將基板114曝光至圖案。可操作個別可定址器件102,例如,以提供本文中所論述之像素柵格成像。In operation of the lithography apparatus 100, the flexible substrate 114 is rolled onto the reel in the X direction below the frame 160 and the individual addressable device 102 and/or the flexible substrate 114 is rolled from the reel. Substrate 114 is measured by level sensor and/or alignment sensor 150, and then substrate 114 is exposed to a pattern using individual addressable device 102. The individual addressable device 102 can be operated, for example, to provide pixel grid imaging as discussed herein.

圖5描繪具有可移動個別可定址器件102的根據本發明之一實施例之微影裝置的示意性俯視圖。如同圖2所示之微影裝置100,微影裝置100包含:基板台106,基板台106係用以固持基板114;定位元件116,定位元件116係用以在高達6個自由度中移動基板台106;對準感測器150,對準感測器150係用以判定個別可定址器件102與基板114之間的對準;及位階感測器150,位階感測器150係用以判定基板114是否位於相對於來自個別可定址器件102之圖案的投影之位階處。FIG. 5 depicts a schematic top view of a lithography apparatus in accordance with an embodiment of the present invention having a movable individual addressable device 102. As with the lithography apparatus 100 shown in FIG. 2, the lithography apparatus 100 includes a substrate stage 106 for holding the substrate 114, and a positioning component 116 for moving the substrate in up to 6 degrees of freedom. The alignment sensor 150 is used to determine the alignment between the individual addressable device 102 and the substrate 114; and the level sensor 150, the level sensor 150 is used to determine Whether the substrate 114 is at a level relative to the projection from the pattern of individual addressable devices 102.

微影裝置100進一步包含配置於框架160上之複數個個別可定址器件102。在此實施例中,個別可定址器件102中之每一者為一輻射發射二極體,例如,雷射二極體(例如,藍紫色雷射二極體)。如圖5所示,將個別可定址器件102配置成沿著Y方向延伸之數個分離個別可定址器件102陣列200。另外,在一實施例中,數個個別可定址器件102陣列200係在X方向上以交替方式與鄰近個別可定址器件102陣列200交錯。微影裝置100(特別為個別可定址器件102)可經配置以提供像素柵格成像。然而,在一實施例中,微影裝置100無需提供像素柵格成像。相反地,微影裝置100可以不形成用於投影至基板上之個別像素而是形成用於投影至基板上之實質上連續影像的方式將二極體之輻射投影至基板上。The lithography apparatus 100 further includes a plurality of individual addressable devices 102 disposed on the frame 160. In this embodiment, each of the individual addressable devices 102 is a radiation emitting diode, such as a laser diode (eg, a blue-violet laser diode). As shown in FIG. 5, the individual addressable devices 102 are configured as a plurality of separate arrays of individual addressable devices 102 that extend along the Y direction. Additionally, in one embodiment, a plurality of arrays of individual addressable devices 102 are interleaved in an X-direction in an alternating manner with adjacent arrays of individually addressable devices 102. The lithography apparatus 100 (particularly the individual addressable device 102) can be configured to provide pixel grid imaging. However, in an embodiment, the lithography apparatus 100 need not provide pixel grid imaging. Conversely, lithography apparatus 100 may project radiation of the diode onto the substrate in a manner that does not form individual pixels for projection onto the substrate but forms a substantially continuous image for projection onto the substrate.

在一實施例中,複數個個別可定址器件102中之一或多者係可移動於該一或多個個別可定址器件係用以投影光束110之全部或部分的曝光區域與該一或多個個別可定址器件不投影光束110之任何部分的曝光區域外部之部位之間。在一實施例中,一或多個個別可定址器件102為輻射發射元件,該等輻射發射元件在曝光區域204(圖5中之淡陰影區域)中開啟或至少部分地開啟(亦即,該等輻射發射元件發射輻射),且在位於曝光區域204外部時關閉(亦即,該等輻射發射元件不發射輻射)。In one embodiment, one or more of the plurality of individually addressable devices 102 are moveable to the one or more individually addressable devices for projecting an exposure region of all or a portion of the beam 110 with the one or more The individual addressable devices do not project between portions of the exposed area of any portion of the beam 110. In one embodiment, the one or more individual addressable devices 102 are radiation emitting elements that are turned on or at least partially turned on in the exposed region 204 (light shaded region in FIG. 5) (ie, the The radiation emitting elements emit radiation, and are turned off when located outside of the exposed area 204 (i.e., the radiation emitting elements do not emit radiation).

在一實施例中,一或多個個別可定址器件102為輻射發射元件,該等輻射發射元件可在曝光區域204中及在曝光區域204外部開啟。在此情況下,若(例如)輻射未藉由一或多個個別可定址器件102適當地投影於曝光區域204中,則可在曝光區域204外部開啟一或多個個別可定址器件102以提供補償曝光。舉例而言,參看圖5,可開啟與曝光區域204對置之陣列之個別可定址器件102中之一或多者,以校正曝光區域204中之失敗或不適當的輻射投影。In one embodiment, one or more of the individual addressable devices 102 are radiation emitting elements that can be turned on in the exposed region 204 and outside of the exposed region 204. In this case, if, for example, radiation is not properly projected into the exposed area 204 by the one or more individual addressable devices 102, one or more individual addressable devices 102 can be turned on outside the exposed area 204 to provide Compensate for exposure. For example, referring to FIG. 5, one or more of the individual addressable devices 102 in an array opposite the exposed regions 204 can be turned on to correct for failed or improper radiation projections in the exposed regions 204.

在一實施例中,曝光區域204為狹長線。在一實施例中,曝光區域204為一或多個個別可定址器件102之單維陣列。在一實施例中,曝光區域204為一或多個個別可定址器件102之二維陣列。在一實施例中,曝光區域204狹長。In an embodiment, the exposed area 204 is an elongated line. In an embodiment, the exposed area 204 is a one-dimensional array of one or more individual addressable devices 102. In one embodiment, the exposed area 204 is a two-dimensional array of one or more individual addressable devices 102. In an embodiment, the exposed area 204 is elongated.

在一實施例中,可移動個別可定址器件102中之每一者可分離地且未必一起作為一部件可移動。In an embodiment, each of the movable individually addressable devices 102 is detachable and not necessarily movable together as a component.

在一實施例中,一或多個個別可定址器件係可移動的,且在使用中,至少在投影光束110期間於橫向於光束110之傳播方向的方向上移動。舉例而言,在一實施例中,一或多個個別可定址器件102為輻射發射元件,該等輻射發射元件在投影光束110期間於實質上垂直於光束110之傳播方向的方向上移動。In one embodiment, one or more of the individual addressable devices are movable and, in use, move at least during projection beam 110 in a direction transverse to the direction of propagation of beam 110. For example, in one embodiment, one or more of the individual addressable devices 102 are radiating radiating elements that move in a direction substantially perpendicular to the direction of propagation of the beam 110 during projection of the beam 110.

在一實施例中,陣列200中之每一者為一可橫向位移板,該可橫向位移板具有沿著該板所配置之複數個空間分離個別可定址器件102,如圖6所示。在使用中,每一板沿著方向208平移。在使用中,對個別可定址器件102之運動進行適當地時控以位於曝光區域204(在圖6中被展示為濃陰影區域)中,以便投影光束110之全部或部分。舉例而言,在一實施例中,一或多個個別可定址器件102為輻射發射元件,且對個別可定址器件102之開啟或關閉進行時控,使得一或多個個別可定址器件102在處於曝光區域204中時開啟且在處於區域204外部時關閉。舉例而言,在圖6(A)中,在方向208上平移複數個二維輻射發射二極體陣列200(兩個陣列係在正方向208上且該兩個陣列之間的中間陣列係在負方向208上)。對輻射發射二極體102之開啟或關閉進行時控,使得每一陣列200之特定輻射發射二極體102在處於曝光區域204中時開啟且在處於區域204外部時關閉。當然,當(例如)陣列200到達該等陣列之行進末端時,陣列200可在相反方向上行進,亦即,兩個陣列係在負方向208上且該兩個陣列之間的中間陣列係在正方向208上。在一另外實例中,在圖6(B)中,在方向208上平移複數個交插單維輻射發射二極體陣列200(在正方向208及負方向208上交替)。對輻射發射二極體102之開啟或關閉進行時控,使得每一陣列200之特定輻射發射二極體102在處於曝光區域204中時開啟且在處於區域204外部時關閉。當然,陣列200可在相反方向上行進。在一另外實例中,在圖6(C)中,在方向208上平移單一輻射發射二極體陣列200(被展示為一維,但無需如此)。對輻射發射二極體102之開啟或關閉進行時控,使得每一陣列200之特定輻射發射二極體102在處於曝光區域204中時開啟且在處於區域204外部時關閉。In one embodiment, each of the arrays 200 is a laterally displaceable plate having a plurality of spatially separated individual addressable devices 102 disposed along the plate, as shown in FIG. In use, each plate translates along direction 208. In use, the motion of the individual addressable device 102 is suitably timed to be located in the exposed area 204 (shown as a heavily shaded area in FIG. 6) to project all or part of the beam 110. For example, in one embodiment, one or more of the individual addressable devices 102 are radiating radiating elements, and timed on or off of the individually addressable devices 102 such that one or more individual addressable devices 102 are It is turned on when in the exposed area 204 and turned off when it is outside the area 204. For example, in Figure 6(A), a plurality of two-dimensional radiation emitting diode arrays 200 are translated in direction 208 (the two arrays are in the positive direction 208 and the intermediate array between the two arrays is In the negative direction 208). The on or off of the radiation emitting diode 102 is time controlled such that the particular radiation emitting diode 102 of each array 200 is turned on when in the exposed region 204 and turned off when outside the region 204. Of course, when, for example, the array 200 reaches the travel end of the array, the array 200 can travel in the opposite direction, ie, the two arrays are in the negative direction 208 and the intermediate array between the two arrays is In the positive direction 208. In an additional example, in FIG. 6(B), a plurality of interleaved single-dimensional radiation emitting diode arrays 200 are alternated in direction 208 (alternating in positive direction 208 and negative direction 208). The on or off of the radiation emitting diode 102 is time controlled such that the particular radiation emitting diode 102 of each array 200 is turned on when in the exposed region 204 and turned off when outside the region 204. Of course, array 200 can travel in the opposite direction. In an additional example, in Figure 6(C), a single radiation emitting diode array 200 is translated in direction 208 (shown as one dimension, but need not be). The on or off of the radiation emitting diode 102 is time controlled such that the particular radiation emitting diode 102 of each array 200 is turned on when in the exposed region 204 and turned off when outside the region 204.

在一實施例中,陣列200中之每一者為一可旋轉板,該可旋轉板具有圍繞該板所配置之複數個空間分離個別可定址器件102。在使用中,每一板(例如)在藉由圖5中之箭頭所示之方向上圍繞其自有軸線206旋轉。亦即,陣列200可在如圖5所示之順時針方向及逆時針方向上交替地旋轉。或者,陣列200中之每一者可在順時針方向上旋轉或在逆時針方向上旋轉。在一實施例中,陣列200旋轉完整一圈。在一實施例中,陣列200旋轉小於完整一圈之弧。在一實施例中,若(例如)基板在Z方向上進行掃描,則陣列200可圍繞延伸於X方向或Y方向上之軸線旋轉。在一實施例中,參看圖6(D),陣列200之個別可定址器件102可配置於邊緣處,且在向外朝向基板114之徑向方向上進行投影。基板114可圍繞陣列200之側之至少一部分延伸。在此情況下,陣列200圍繞延伸於X方向上之軸線旋轉,且基板114在X方向上移動。In one embodiment, each of the arrays 200 is a rotatable plate having a plurality of spatially separated individual addressable devices 102 disposed about the plate. In use, each plate rotates about its own axis 206, for example, in the direction indicated by the arrow in FIG. That is, the array 200 can be alternately rotated in a clockwise direction and a counterclockwise direction as shown in FIG. Alternatively, each of the arrays 200 can be rotated in a clockwise direction or in a counterclockwise direction. In one embodiment, array 200 is rotated a full turn. In one embodiment, array 200 rotates less than a full circle of arcs. In one embodiment, array 200 can be rotated about an axis extending in the X or Y direction if, for example, the substrate is scanned in the Z direction. In one embodiment, referring to FIG. 6(D), the individual addressable devices 102 of the array 200 can be disposed at the edges and projected in a radial direction outwardly toward the substrate 114. The substrate 114 can extend around at least a portion of the sides of the array 200. In this case, the array 200 is rotated about an axis extending in the X direction, and the substrate 114 is moved in the X direction.

在使用中,對個別可定址器件102之運動進行適當地時控以位於曝光區域204中,以便投影光束110之全部或部分。舉例而言,在一實施例中,一或多個個別可定址器件102為輻射發射元件,且對個別可定址器件102之開啟或關閉進行時控,使得一或多個個別可定址器件102在處於曝光區域204中時開啟且在處於區域204外部時關閉。因此,在一實施例中,可使輻射發射元件102在運動期間均保持開啟,且接著將輻射發射元件102中之特定輻射發射元件在曝光區域204中調變為關閉。可能需要在輻射發射元件102與基板之間及在曝光區域204外部的適當屏蔽,以屏蔽曝光區域204免於在曝光區域204外部開啟之輻射發射元件102。使輻射發射元件102一致地開啟可促進使輻射發射元件102在使用期間處於實質上均一溫度下。在一實施例中,可使輻射發射元件102時常保持關閉,且可使輻射發射元件102中之一或多者在處於曝光區域204中時開啟。In use, the motion of the individual addressable device 102 is suitably timed to be located in the exposed region 204 to project all or part of the beam 110. For example, in one embodiment, one or more of the individual addressable devices 102 are radiating radiating elements, and timed on or off of the individually addressable devices 102 such that one or more individual addressable devices 102 are It is turned on when in the exposed area 204 and turned off when it is outside the area 204. Thus, in an embodiment, the radiation emitting element 102 can be left open during motion, and then the particular radiation emitting element in the radiation emitting element 102 can be turned off in the exposed region 204. Appropriate shielding between the radiation emitting element 102 and the substrate and outside of the exposed area 204 may be required to shield the exposed area 204 from the radiation emitting element 102 that is turned on outside of the exposed area 204. Enabling the radiation emitting elements 102 to be uniformly turned on can promote the radiation emitting elements 102 to be at substantially uniform temperatures during use. In an embodiment, the radiation emitting element 102 can be kept off from time to time and one or more of the radiation emitting elements 102 can be turned on when in the exposed area 204.

在一實施例中,可旋轉板可具有圖7所示之組態。舉例而言,在圖7(A)中,展示可旋轉板之示意性俯視圖。可旋轉板可具有陣列200,陣列200具有圍繞該板所配置之多個個別可定址器件102子陣列210(該可旋轉板相較於圖5之可旋轉板示意性地展示圍繞該板所配置之單一個別可定址器件102陣列200)。在圖7(A)中,子陣列210被展示為相對於彼此交錯,使得一子陣列210之一個別可定址器件102處於另一子陣列210之兩個個別可定址器件102之間。然而,子陣列210之個別可定址器件102可彼此對準。個別可定址器件102可藉由馬達216圍繞一軸線個別地或一起旋轉,在此實例中,該軸線通過馬達216而延伸於圖7(A)中之Z方向上。馬達216可附接至可旋轉板且連接至框架(例如,框架160),或附接至框架(例如,框架160)且連接至可旋轉板。在一實施例中,馬達216(或(例如)位於別處之某一馬達)可導致個別可定址器件102之其他移動(無論是個別地或是一起)。舉例而言,馬達216可導致在X方向、Y方向及/或Z方向上的個別可定址器件102中之一或多者之平移。或者或此外,馬達216可導致圍繞X方向及/或Y方向的個別可定址器件102中之一或多者之旋轉(亦即,Rx 運動及/或Ry 運動)。In an embodiment, the rotatable plate can have the configuration shown in FIG. For example, in Figure 7(A), a schematic top view of a rotatable plate is shown. The rotatable plate can have an array 200 having a plurality of individual addressable device 102 sub-arrays 210 disposed about the plate (the rotatable plate is shown schematically around the plate as compared to the rotatable plate of Figure 5) A single array of individually addressable devices 102 is 200). In FIG. 7(A), sub-arrays 210 are shown as being staggered relative to each other such that one of the individual addressable devices 102 of one sub-array 210 is between two individual addressable devices 102 of another sub-array 210. However, the individual addressable devices 102 of the sub-array 210 can be aligned with one another. The individual addressable devices 102 can be rotated individually or together about an axis by the motor 216, which in this example extends through the motor 216 in the Z direction of Figure 7(A). Motor 216 can be attached to the rotatable plate and attached to the frame (eg, frame 160), or attached to the frame (eg, frame 160) and to the rotatable plate. In an embodiment, motor 216 (or, for example, a motor located elsewhere) may result in other movements of individual addressable devices 102 (either individually or together). For example, motor 216 can cause translation of one or more of individual addressable devices 102 in the X, Y, and/or Z directions. Alternatively or additionally, the motor 216 may cause rotation of the one or more individually addressable device 102 about the X direction and / or Y direction (i.e., R x motion and / or R y motion).

在圖7(B)中被示意性地展示為俯視圖之可旋轉板的實施例中,該可旋轉板可在其中心區域中具有開口212,其中個別可定址器件102陣列200係配置於開口212外部之板上。因此,例如,可旋轉板可形成如圖7(B)所示之環形圓盤,其中個別可定址器件102陣列200係圍繞該圓盤而配置。開口可減少可旋轉板之重量,及/或促進冷卻個別可定址器件102。In the embodiment of the rotatable plate, which is schematically illustrated in FIG. 7(B) as a top view, the rotatable plate can have an opening 212 in its central region, wherein the array of individual addressable devices 102 is disposed in the opening 212. External board. Thus, for example, the rotatable plate can form an annular disk as shown in Figure 7(B), wherein the array of individual addressable devices 102 is configured around the disk. The opening can reduce the weight of the rotatable plate and/or facilitate cooling of the individually addressable device 102.

在一實施例中,可旋轉板可使用支撐件214而被支撐於外部周邊處。支撐件214可為軸承,諸如滾筒軸承或氣體軸承。可藉由如圖7(A)所示之馬達216提供旋轉(及/或其他移動,例如,在X方向、Y方向及/或Z方向上之平移,及/或Rx 運動及/或Ry 運動)。或者或另外,支撐件214可包括馬達以導致個別可定址器件102圍繞軸線A旋轉(及/或提供其他移動,例如,在X方向、Y方向及/或Z方向上之平移,及/或Rx 運動及/或Ry 運動)。In an embodiment, the rotatable plate can be supported at the outer perimeter using the support 214. The support 214 can be a bearing such as a roller bearing or a gas bearing. Can by FIG 7 (A) to provide rotation of the motor 216 shown in (and / or other movement, e.g., in the X direction, Y direction and / or translation in the Z direction, and / or R X movement, and / or R y movement). Alternatively or additionally, the support 214 can include a motor to cause the individual addressable device 102 to rotate about the axis A (and/or provide other movements, such as translation in the X, Y, and/or Z directions, and/or R x motion and / or R y motion).

在一實施例中,參看圖7(D)及圖7(E),具有個別可定址器件102陣列200之可旋轉板可附接至可旋轉結構218。可旋轉結構218可藉由馬達220圍繞軸線B旋轉。另外,可旋轉板可藉由馬達216相對於可旋轉結構218旋轉,馬達216導致可旋轉板圍繞軸線A旋轉。在一實施例中,旋轉軸線A與旋轉軸線B不重合,且因此,該等軸線係空間分離的,如圖7(D)及圖7(E)所示。在一實施例中,旋轉軸線A與旋轉軸線B彼此實質上平行。在曝光期間之使用中,可旋轉結構218及可旋轉板兩者均旋轉。可協調該旋轉,使得曝光區域204中之個別可定址器件102可以實質上直線進行對準。此情形可與(例如)圖5之實施例相比較,在圖5之實施例中,曝光區域204中之個別可定址器件102可能不以實質上直線進行對準。In one embodiment, referring to FIGS. 7(D) and 7(E), a rotatable plate having an array 200 of individual addressable devices 102 can be attached to the rotatable structure 218. The rotatable structure 218 is rotatable about the axis B by the motor 220. Additionally, the rotatable plate is rotatable relative to the rotatable structure 218 by the motor 216, which causes the rotatable plate to rotate about the axis A. In an embodiment, the axis of rotation A does not coincide with the axis of rotation B, and therefore, the axes are spatially separated as shown in Figures 7(D) and 7(E). In an embodiment, the axis of rotation A and the axis of rotation B are substantially parallel to each other. During use during exposure, both the rotatable structure 218 and the rotatable plate rotate. This rotation can be coordinated such that the individual addressable devices 102 in the exposed region 204 can be aligned substantially in a straight line. This situation can be compared to, for example, the embodiment of FIG. 5, in which the individual addressable devices 102 in the exposed regions 204 may not be aligned in a substantially straight line.

在具有如上文所描述之可移動個別可定址器件的情況下,可在需要時藉由將個別可定址器件移動至曝光區域204中來減少個別定址器件之數目。因此,可減少熱負荷。In the case of a mobile individually addressable device as described above, the number of individual addressed devices can be reduced by moving individual addressable devices into the exposed region 204 as needed. Therefore, the heat load can be reduced.

在一實施例中,可提供比理論上所需要之可移動個別可定址器件(例如,在可旋轉板上)更多的可移動個別可定址器件。此配置之可能優點在於:若一或多個可移動個別可定址器件中斷或未能操作,則可代替地使用可移動個別可定址器件中之一或多個其他可移動個別可定址器件。或者或此外,額外可移動個別可定址器件可具有用於控制個別可定址器件上之熱負荷的優點,此係因為所存在之可移動個別可定址器件愈多,則存在使曝光區域204外部之可移動個別可定址器件冷卻的機會愈多。In one embodiment, more movable individual addressable devices may be provided than are theoretically required for movable individually addressable devices (e.g., on a rotatable plate). A possible advantage of this configuration is that one or more other movable individually addressable devices of the movable individually addressable device can be used instead if one or more of the movable individually addressable devices are interrupted or fail to operate. Alternatively or in addition, the additional movable individual addressable device may have the advantage of controlling the thermal load on the individual addressable device, as more externally addressable devices are present, there is an external exposure area 204 The more opportunities for a movable individual addressable device to cool down.

在一實施例中,可移動個別可定址器件102嵌入於包含低熱導率之材料中。舉例而言,該材料可為陶瓷,例如,菫青石或以菫青石為基礎之陶瓷,及/或微晶玻璃陶瓷。在一實施例中,可移動個別可定址器件102嵌入於包含高熱導率之材料(例如,金屬,例如,相對輕量之金屬(例如,鋁或鈦))中。In an embodiment, the movable individual addressable device 102 is embedded in a material that includes low thermal conductivity. For example, the material can be a ceramic, such as cordierite or cordierite-based ceramics, and/or a glass-ceramic. In one embodiment, the movable individual addressable device 102 is embedded in a material that includes high thermal conductivity (eg, a metal, such as a relatively lightweight metal (eg, aluminum or titanium)).

在一實施例中,陣列200可包含溫度控制配置。舉例而言,參看圖7(F),陣列200可具有流體(例如,液體)傳導通道222以在陣列200上、在陣列200附近或通過陣列200輸送冷卻流體以冷卻該陣列。通道222可連接至適當熱交換器及泵228以使流體循環通過該通道。連接於通道222與熱交換器及泵228之間的供應件(supply)224及返回件(return)226可促進流體之循環及溫度控制。感測器234可提供於陣列中、陣列上或陣列附近,以量測陣列200之參數,該量測可用以控制(例如)藉由熱交換器及泵提供之流體流的溫度。在一實施例中,感測器234可量測陣列200本體之膨脹及/或收縮,該量測可用以控制藉由熱交換器及泵提供之流體流的溫度。此膨脹及/或收縮可為溫度之代表。在一實施例中,感測器234可與陣列200整合(如藉由以圓點之形式的感測器234所示),及/或可與陣列200分離(如藉由以方框之形式的感測器234所示)。與陣列200分離之感測器234可為光學感測器。In an embodiment, array 200 can include a temperature control configuration. For example, referring to FIG. 7(F), array 200 can have a fluid (eg, liquid) conductive channel 222 to deliver cooling fluid on array 200, near array 200, or through array 200 to cool the array. Channel 222 can be coupled to a suitable heat exchanger and pump 228 to circulate fluid through the passage. A supply 224 and a return 226 connected between the passage 222 and the heat exchanger and pump 228 facilitate fluid circulation and temperature control. A sensor 234 can be provided in, on or near the array to measure parameters of the array 200 that can be used to control, for example, the temperature of the fluid stream provided by the heat exchanger and the pump. In one embodiment, the sensor 234 can measure the expansion and/or contraction of the body of the array 200, which can be used to control the temperature of the fluid flow provided by the heat exchanger and the pump. This expansion and/or contraction can be representative of temperature. In an embodiment, the sensor 234 can be integrated with the array 200 (as shown by the sensor 234 in the form of a dot) and/or can be separated from the array 200 (eg, by way of a box) Detector 234 is shown). The sensor 234 separate from the array 200 can be an optical sensor.

在一實施例中,參看圖7(G),陣列200可具有一或多個散熱片230以增加用於熱耗散之表面區域。散熱片230可(例如)處於陣列200之頂部表面上及/或陣列200之側表面上。視情況,可提供一或多個另外散熱片232以與散熱片230合作以促進熱耗散。舉例而言,散熱片232能夠自散熱片230吸收熱,且可類似於如圖7(F)所示且關於圖7(F)所描述而包含流體(例如,液體)傳導通道及關聯熱交換器/泵。In one embodiment, referring to Figure 7(G), array 200 can have one or more heat sinks 230 to increase the surface area for heat dissipation. The heat sink 230 can be, for example, on the top surface of the array 200 and/or on the side surface of the array 200. Optionally, one or more additional heat sinks 232 may be provided to cooperate with the heat sink 230 to promote heat dissipation. For example, the heat sink 232 can absorb heat from the heat sink 230 and can include a fluid (eg, liquid) conductive channel and associated heat exchange similar to that shown in FIG. 7(F) and described with respect to FIG. 7(F). / pump.

在一實施例中,參看圖7(H),陣列200可位於流體限制結構236處或附近,流體限制結構236經組態以使流體238維持接觸陣列200本體,以促進經由該流體之熱耗散。在一實施例中,流體238可為液體,例如,水。在一實施例中,流體限制結構236在其與陣列200本體之間提供密封。在一實施例中,該密封可為經由(例如)氣體流動或毛細管力所提供之無接觸密封。在一實施例中,類似於如關於流體傳導通道222所論述,使流體238循環以促進熱耗散。可藉由流體供應元件240供應流體238。In one embodiment, referring to FIG. 7(H), the array 200 can be located at or near the fluid confinement structure 236, and the fluid confinement structure 236 is configured to maintain the fluid 238 in contact with the body of the array 200 to promote heat dissipation through the fluid. Scattered. In an embodiment, the fluid 238 can be a liquid, such as water. In an embodiment, the fluid confinement structure 236 provides a seal between it and the body of the array 200. In an embodiment, the seal may be a contactless seal provided via, for example, gas flow or capillary forces. In an embodiment, fluid 238 is circulated to promote heat dissipation similar to that discussed with respect to fluid conducting channel 222. Fluid 238 may be supplied by fluid supply element 240.

在一實施例中,參看圖7(H),陣列200可位於流體供應元件240處或附近,流體供應元件240經組態以將流體238投射朝向陣列200本體,以促進經由該流體之熱耗散。在一實施例中,流體238為氣體,例如,清潔乾燥空氣、N2 、惰性氣體,等等。雖然圖7(H)中一起展示流體限制結構236及流體供應元件240,但無需一起提供流體限制結構236及流體供應元件240。In an embodiment, referring to FIG. 7(H), the array 200 can be located at or near the fluid supply element 240, and the fluid supply element 240 is configured to project the fluid 238 toward the body of the array 200 to promote heat loss through the fluid. Scattered. In one embodiment, fluid 238 is a gas, for example, clean dry air, N 2, an inert gas, and the like. Although fluid confinement structure 236 and fluid supply element 240 are shown together in Figure 7(H), there is no need to provide fluid confinement structure 236 and fluid supply element 240 together.

在一實施例中,陣列200本體為具有(例如)用於流體傳導通道222之空腔的實質上固體結構。在一實施例中,陣列200本體為實質上框架狀結構,該結構大部分敞開且各種組件(例如,個別可定址器件102、流體傳導通道222,等等)附接至該結構。此敞開狀結構促進氣體流動及/或增加表面區域。在一實施例中,陣列200本體為實質上固體結構,其中複數個空腔進入本體中或通過本體以促進氣體流動及/或增加表面區域。In an embodiment, the array 200 body is a substantially solid structure having, for example, a cavity for the fluid conducting channel 222. In one embodiment, the array 200 body is a substantially frame-like structure that is mostly open and to which various components (eg, individual addressable devices 102, fluid conducting channels 222, etc.) are attached. This open structure promotes gas flow and/or increases surface area. In one embodiment, the array 200 body is a substantially solid structure in which a plurality of cavities enter the body or pass through the body to promote gas flow and/or increase surface area.

雖然上文已描述用以提供冷卻之實施例,但或者或此外,該等實施例可提供加熱。While embodiments have been described above to provide cooling, or alternatively, such embodiments may provide for heating.

在一實施例中,在曝光使用期間,使陣列200理想地保持於實質上恆定穩定狀態下。因此,例如,陣列200之個別可定址器件102中之全部或多數可在曝光之前被通電以達到或接近所要穩定狀態溫度,且在曝光期間,任何一或多個溫度控制配置均可用以冷卻及/或加熱陣列200以維持穩定狀態溫度。在一實施例中,任何一或多個溫度控制配置均可用以在曝光之前加熱陣列200以達到或接近所要穩定狀態溫度。接著,在曝光期間,任何一或多個溫度控制配置均可用以冷卻及/或加熱陣列200以維持穩定狀態溫度。可以前饋及/或回饋方式使用來自感測器234之量測以維持穩定狀態溫度。在一實施例中,複數個陣列200中之每一者可具有相同穩定狀態溫度,或複數個陣列200中之一或多個陣列200可具有與複數個陣列200中之一或多個其他陣列200之穩定狀態溫度不同的穩定狀態溫度。在一實施例中,陣列200被加熱至高於所要穩定狀態溫度之溫度且接著在曝光期間下降,此係由於藉由任何一或多個溫度控制配置施加之冷卻,及/或因為個別可定址器件102之使用不足以維持高於所要穩定狀態溫度之溫度。In one embodiment, the array 200 is desirably maintained in a substantially constant steady state during exposure use. Thus, for example, all or a majority of the individual addressable devices 102 of array 200 can be energized prior to exposure to reach or approach the desired steady state temperature, and any one or more temperature control configurations can be used for cooling during exposure. / or heating array 200 to maintain a steady state temperature. In one embodiment, any one or more temperature control configurations can be used to heat array 200 prior to exposure to achieve or approximate a desired steady state temperature. Next, during exposure, any one or more temperature control configurations can be used to cool and/or heat array 200 to maintain a steady state temperature. The measurement from sensor 234 can be used in a feedforward and/or feedback manner to maintain a steady state temperature. In an embodiment, each of the plurality of arrays 200 can have the same steady state temperature, or one or more of the plurality of arrays 200 can have one or more other arrays of the plurality of arrays 200 200 steady state temperature different steady state temperature. In one embodiment, the array 200 is heated to a temperature above the desired steady state temperature and then decreased during exposure due to cooling applied by any one or more temperature control configurations, and/or because of individual addressable devices The use of 102 is not sufficient to maintain a temperature above the desired steady state temperature.

在一實施例中,為了改良熱控制及總冷卻,沿著及/或橫越曝光區域增加陣列200本體之數目。因此,例如,代替圖5所示之四個陣列200,可提供五個、六個、七個、八個、九個、十個或十個以上陣列200。可提供更少陣列(例如,一個陣列200),例如,覆蓋基板之全寬度的單一大陣列。In one embodiment, to improve thermal control and total cooling, the number of array bodies 200 is increased along and/or across the exposed areas. Thus, for example, instead of the four arrays 200 shown in FIG. 5, five, six, seven, eight, nine, ten, or more than one array 200 may be provided. Fewer arrays (e.g., one array 200) may be provided, for example, a single large array covering the full width of the substrate.

在一實施例中,如本文中所描述之透鏡陣列係與可移動個別可定址器件相關聯或整合。舉例而言,透鏡陣列板可附接至可移動陣列200中之每一者,且因此隨著個別可定址器件102而可移動(例如,可旋轉)。如上文所論述,透鏡陣列板可相對於個別可定址器件102可位移(例如,在Z方向上)。在一實施例中,可針對陣列200提供複數個透鏡陣列板,每一透鏡陣列板係與複數個個別可定址器件102之不同子集相關聯。In an embodiment, a lens array as described herein is associated or integrated with a movable individual addressable device. For example, a lens array panel can be attached to each of the movable arrays 200 and thus movable (eg, rotatable) with the individual addressable devices 102. As discussed above, the lens array plate can be displaceable relative to the individual addressable device 102 (eg, in the Z direction). In an embodiment, a plurality of lens array plates may be provided for array 200, each lens array plate being associated with a different subset of a plurality of individual addressable devices 102.

在一實施例中,參看圖7(I),單一分離透鏡242可附接於每一個別可定址器件102前方,且隨著個別可定址器件102而可移動(例如,圍繞軸線A可旋轉)。另外,透鏡242可經由使用致動器244而相對於個別可定址器件102可位移(例如,在Z方向上)。在一實施例中,參看圖7(J),個別可定址器件102及透鏡242可藉由致動器244而相對於陣列200之本體246一起位移。在一實施例中,致動器244經組態以僅使透鏡242在Z方向上位移(亦即,相對於個別可定址器件102或連同個別可定址器件102)。In one embodiment, referring to FIG. 7(I), a single split lens 242 can be attached in front of each individual addressable device 102 and movable (eg, rotatable about axis A) with the individual addressable device 102. . Additionally, lens 242 can be displaceable relative to individual addressable device 102 via use of actuator 244 (eg, in the Z direction). In one embodiment, referring to FIG. 7(J), the individual addressable device 102 and lens 242 can be displaced together with respect to the body 246 of the array 200 by the actuator 244. In an embodiment, the actuator 244 is configured to only displace the lens 242 in the Z direction (ie, relative to the individual addressable device 102 or together with the individual addressable device 102).

在一實施例中,致動器244經組態以使透鏡242在高達3個自由度中位移(Z方向、圍繞X方向之旋轉,及/或圍繞Y方向之旋轉)。在一實施例中,致動器244經組態以使透鏡242在高達6個自由度中位移。在透鏡242係相對於其個別可定址器件102可移動時,可藉由致動器244移動透鏡242以改變透鏡242相對於基板之聚焦位置。在透鏡242係隨著其個別可定址器件102而可移動時,透鏡242之聚焦位置實質上恆定,但相對於基板位移。在一實施例中,針對與陣列200之每一個別可定址器件102相關聯的每一透鏡242而個別地控制透鏡242之移動。在一實施例中,複數個透鏡242之子集係相對於或連同複數個透鏡242的複數個個別可定址器件102之關聯子集可一起移動。在此後者情形中,可為了更低資料耗用及/或更快回應而損耗聚焦控制之精細度。在一實施例中,可藉由散焦來調整藉由個別可定址器件102提供之輻射之光點的大小,亦即,散焦得愈多,則光點大小愈大。In an embodiment, the actuator 244 is configured to displace the lens 242 in up to 3 degrees of freedom (Z direction, rotation about the X direction, and/or rotation about the Y direction). In an embodiment, the actuator 244 is configured to displace the lens 242 in up to 6 degrees of freedom. When the lens 242 is movable relative to its individual addressable device 102, the lens 242 can be moved by the actuator 244 to change the focus position of the lens 242 relative to the substrate. As the lens 242 is movable with its individual addressable device 102, the focus position of the lens 242 is substantially constant, but displaced relative to the substrate. In an embodiment, the movement of lens 242 is individually controlled for each lens 242 associated with each individual addressable device 102 of array 200. In one embodiment, a subset of the plurality of lenses 242 are movable together with respect to or associated with a plurality of associated subsets of the plurality of individually addressable devices 102. In this latter case, the fineness of the focus control can be lost for lower data consumption and/or faster response. In one embodiment, the size of the spot of radiation provided by the individual addressable device 102 can be adjusted by defocusing, i.e., the more defocusing, the larger the spot size.

在一實施例中,參看圖7(K),具有孔隙之孔隙結構248可位於透鏡242下方。在一實施例中,孔隙結構248可在透鏡242與關聯個別可定址器件102之間位於透鏡242上方。孔隙結構248可限制透鏡242、關聯個別可定址器件102及/或鄰近透鏡242/個別可定址器件102之繞射效應。In an embodiment, referring to FIG. 7(K), the apertured structure 248 having apertures can be located below the lens 242. In an embodiment, the aperture structure 248 can be located above the lens 242 between the lens 242 and the associated individual addressable device 102. The aperture structure 248 can limit the diffraction effects of the lens 242, associated individual addressable devices 102, and/or adjacent lenses 242 / individual addressable devices 102.

在一實施例中,個別可定址器件102可為輻射發射元件,例如,雷射二極體。此輻射發射元件可具有高空間相干性,且因此可呈現斑點問題。為了避免此斑點問題,應藉由移位一光束部分相對於另一光束部分之相位來擾亂藉由輻射發射元件發射之輻射。在一實施例中,參看圖7(L)及圖7(M),板250可位於(例如)框架160上,且個別可定址器件102相對於板250移動。隨著個別可定址器件102相對於且遍及板250移動,板250導致破壞藉由個別可定址器件102發射朝向基板之輻射之空間相干性。在一實施例中,隨著個別可定址器件102相對於且遍及板250移動,板250位於透鏡242與其關聯個別可定址器件102之間。在一實施例中,板250可位於透鏡242與基板之間。In an embodiment, the individual addressable device 102 can be a radiation emitting component, such as a laser diode. This radiation emitting element can have high spatial coherence and thus can present speckle problems. In order to avoid this speckle problem, the radiation emitted by the radiation emitting element should be disturbed by shifting the phase of one beam portion relative to the other beam portion. In one embodiment, referring to FIGS. 7(L) and 7(M), the plate 250 can be located, for example, on the frame 160 with the individual addressable device 102 moving relative to the plate 250. As the individual addressable device 102 moves relative to and across the board 250, the board 250 causes the spatial coherence of the radiation directed toward the substrate to be transmitted by the individual addressable device 102. In one embodiment, as the individual addressable device 102 moves relative to and across the board 250, the board 250 is located between the lens 242 and its associated individual addressable device 102. In an embodiment, the plate 250 can be located between the lens 242 and the substrate.

在一實施例中,參看圖7(N),空間相干性破壞元件252可位於該基板與將輻射投影至曝光區域上之至少該等個別可定址器件102之間。在一實施例中,空間相干性破壞元件252位於個別可定址器件102與透鏡242之間,且可附接至本體246。在一實施例中,空間相干性破壞元件252為相位調變器、振動板或旋轉板。隨著個別可定址器件102將輻射投影朝向基板,空間相干性破壞元件252導致破壞藉由個別可定址器件102發射之輻射之空間相干性。In one embodiment, referring to FIG. 7(N), a spatial coherence disrupting element 252 can be located between the substrate and at least the individual addressable devices 102 that project radiation onto the exposed area. In an embodiment, spatial coherence disrupting element 252 is located between individual addressable device 102 and lens 242 and may be attached to body 246. In an embodiment, the spatial coherence disrupting element 252 is a phase modulator, a vibrating plate, or a rotating plate. As the individual addressable device 102 projects the radiation toward the substrate, the spatial coherence destroying element 252 causes the spatial coherence of the radiation emitted by the individual addressable device 102 to be destroyed.

在一實施例中,理想地經由高熱導率材料將透鏡陣列(無論是一起作為部件或是作為個別透鏡)附接至陣列200,以促進熱自透鏡陣列至陣列200之傳導,其中可更有利地提供冷卻。在一實施例中,陣列200可包含一或多個聚焦或位階感測器254,如同位階感測器150。舉例而言,感測器254可經組態以針對陣列200之每一個別可定址器件102或針對陣列200之複數個個別可定址器件102量測聚焦。因此,若偵測到離焦條件,則可針對陣列200之每一個別可定址器件102或針對陣列200之複數個個別可定址器件102校正聚焦。可藉由(例如)在Z方向上(及/或圍繞X軸及/或圍繞Y軸)移動透鏡242來校正聚焦。In an embodiment, the lens array (whether together as a component or as an individual lens) is desirably attached to the array 200 via a high thermal conductivity material to facilitate conduction of heat from the lens array to the array 200, where may be more advantageous Cooling is provided. In an embodiment, array 200 may include one or more focus or level sensors 254, such as level sensor 150. For example, sensor 254 can be configured to measure focus for each individual addressable device 102 of array 200 or for a plurality of individual addressable devices 102 for array 200. Thus, if an out-of-focus condition is detected, the focus can be corrected for each individual addressable device 102 of array 200 or for a plurality of individual addressable devices 102 for array 200. Focusing can be corrected by, for example, moving the lens 242 in the Z direction (and/or around the X axis and/or around the Y axis).

在一實施例中,感測器254係與一個別可定址器件102成整體(或可與陣列200之複數個個別可定址器件102成整體)。參看圖7(O),示意性地描繪實例感測器254。聚焦偵測光束256經重新引導(例如,反射)離開基板表面、傳遞通過透鏡242且藉由半鍍銀鏡面258引導朝向偵測器262。在一實施例中,聚焦偵測光束256可為碰巧自基板重新引導的用於曝光之輻射。在一實施例中,聚焦偵測光束256可為引導於基板處且在藉由基板重新引導後隨即變為光束256之專用光束。刀緣(knife edge)260(其可為孔隙)在光束256照射偵測器262之前處於光束256之路徑中。在此實例中,偵測器262包含在圖7(O)中藉由偵測器262之分裂所示的至少兩個輻射敏感部分(例如,區域或偵測器)。當基板係聚焦時,清晰影像形成於刀緣260處,且因此,偵測器262之輻射敏感部分接收相等量之輻射。當基板係離焦時,光束256移位,且影像將形成於刀緣260前方或後方。因此,刀緣260將截取光束256之特定部分,且偵測器262之一輻射敏感部分相較於偵測器262之另一輻射敏感部分將接收較少量之輻射。來自偵測器262之輻射敏感部分之輸出信號的比較實現供重新引導光束256的基板之平面與所要位置相差的量,及基板之平面不同於所要位置所在的方向。可電子地處理該等信號以給出(例如)可供調整透鏡242之控制信號。鏡面258、刀緣260及偵測器262可安裝至陣列200。在一實施例中,偵測器262可為四邊形單元(quad cell)。In one embodiment, the sensor 254 is integral with one of the addressable devices 102 (or may be integral with the plurality of individual addressable devices 102 of the array 200). Referring to Figure 7(O), an example sensor 254 is schematically depicted. The focus detection beam 256 is redirected (eg, reflected) away from the substrate surface, passed through the lens 242, and directed toward the detector 262 by the half-silvered mirror 258. In one embodiment, the focus detection beam 256 can be radiation for exposure that happens to be redirected from the substrate. In one embodiment, the focus detection beam 256 can be a dedicated beam that is directed at the substrate and then becomes a beam 256 after being redirected by the substrate. A knife edge 260 (which may be an aperture) is in the path of the beam 256 before the beam 256 illuminates the detector 262. In this example, detector 262 includes at least two radiation-sensitive portions (e.g., regions or detectors) shown by the splitting of detector 262 in Figure 7(O). When the substrate is in focus, a sharp image is formed at the edge 260, and thus, the radiation sensitive portion of the detector 262 receives an equal amount of radiation. When the substrate is out of focus, the beam 256 is displaced and the image will be formed in front of or behind the knife edge 260. Thus, the knife edge 260 will intercept a particular portion of the beam 256, and one of the radiation sensitive portions of the detector 262 will receive a smaller amount of radiation than the other radiation sensitive portion of the detector 262. The comparison of the output signals from the radiation sensitive portions of detector 262 achieves an amount by which the plane of the substrate redirecting beam 256 differs from the desired location, and the plane of the substrate is different from the direction in which the desired location is located. The signals can be processed electronically to give, for example, control signals for adjusting lens 242. Mirror 258, knife edge 260, and detector 262 can be mounted to array 200. In an embodiment, the detector 262 can be a quad cell.

在一實施例中,可提供400個個別可定址器件102,其中133個工作(在任一時間)。在一實施例中,600個至1200個工作之個別可定址器件102可具備(視情況)額外個別可定址器件102以作為(例如)儲備物及/或用於校正曝光(如(例如)上文所論述)。工作之個別可定址器件102之數目可取決於(例如)抗蝕劑,抗蝕劑需要特定輻射劑量以用於圖案化。在個別可定址器件102係可旋轉時(諸如個別可定址器件102),個別可定址器件102可隨著1200個工作之個別可定址器件102而在6赫茲之頻率下旋轉。若存在更少個別可定址器件102,則可在更高頻率下旋轉個別可定址器件102;若存在更多個別可定址器件102,則可在更低頻率下旋轉個別可定址器件102。In one embodiment, 400 individual addressable devices 102 can be provided, of which 133 work (at any time). In an embodiment, 600 to 1200 working individual addressable devices 102 may be provided with (as appropriate) additional individual addressable devices 102 as, for example, a stock and/or for correcting exposure (eg, for example) Discussed in the article). The number of individual addressable devices 102 that can be operated may depend on, for example, a resist that requires a particular radiation dose for patterning. When the individually addressable device 102 is rotatable (such as the individual addressable device 102), the individual addressable device 102 can rotate at a frequency of 6 Hz with 1200 individual addressable devices 102. If there are fewer individual addressable devices 102, the individual addressable devices 102 can be rotated at a higher frequency; if there are more individual addressable devices 102, the individual addressable devices 102 can be rotated at a lower frequency.

在一實施例中,相較於一個別可定址器件102陣列,可使用可移動個別可定址器件102來減少個別可定址器件102之數目。舉例而言,可提供600個至1200個工作(在任一時刻)之個別可定址器件102。此外,減少之數目可得到與一個別可定址器件102陣列實質上類似但具有一或多個益處的結果。舉例而言,對於使用紫藍色二極體陣列之足夠曝光能力,可能需要100,000個紫藍色二極體之陣列,例如,以200個二極體乘500個二極體進行配置。在10千赫茲之頻率下操作的情況下,每雷射二極體之光學功率將為0.33毫瓦特。每雷射二極體之電功率將為150 mW=35 mA×4.1 V。因此,對於該陣列,電功率將為15千瓦特。在使用可移動個別可定址器件之實施例中,可提供400個紫藍色二極體,其中133個工作。在9百萬赫茲之頻率下操作的情況下,每雷射二極體之光學功率將為250毫瓦特。每雷射二極體之電功率將為1000 mW=240 mA×4.2 V。因此,對於該陣列,電功率將為133瓦特。因此,可在如(例如)圖7(P)所示之光學輸出功率相對於前向電流曲線(240毫安培相對於35毫安培)之陡峭部分中操作可移動個別可定址器件配置之二極體,從而得到每二極體之高輸出功率(250毫瓦特相對於0.33毫瓦特),但得到複數個個別可定址器件之低電功率(133瓦特相對於15千瓦特)。因此,二極體可被更有效率地使用且導致更少功率消耗及/或熱。In one embodiment, the movable individually addressable device 102 can be used to reduce the number of individual addressable devices 102 compared to an array of other addressable devices 102. For example, an individual addressable device 102 can be provided from 600 to 1200 jobs (at any time). Moreover, the reduced number can result in substantially similar but one or more benefits to an array of other addressable devices 102. For example, for sufficient exposure capability using a violet-blue diode array, an array of 100,000 violet-blue diodes may be required, for example, with 200 diodes and 500 diodes. In the case of operation at a frequency of 10 kHz, the optical power per laser diode will be 0.33 milliwatts. The electrical power per laser diode will be 150 mW = 35 mA x 4.1 V. Therefore, for this array, the electrical power will be 15 kilowatts. In an embodiment using a movable individual addressable device, 400 purple blue diodes can be provided, of which 133 operate. With a frequency of 9 megahertz, the optical power per laser diode will be 250 milliwatts. The electrical power per laser diode will be 1000 mW = 240 mA x 4.2 V. Therefore, for this array, the electrical power will be 133 watts. Thus, the poles of the movable individually addressable device configuration can be operated in a steep portion of the optical output power as shown, for example, in Figure 7 (P) versus the forward current curve (240 milliamps versus 35 milliamps). Body, resulting in high output power per diode (250 milliwatts versus 0.33 milliwatts), but with low electrical power (133 watts versus 15 kilowatts) for a plurality of individual addressable devices. Therefore, the diode can be used more efficiently and results in less power consumption and/or heat.

因此,在一實施例中,在功率/前向電流曲線之陡峭部分中操作二極體。在功率/前向電流曲線之非陡峭部分中操作可導致輻射之不相干性。在一實施例中,以大於5毫瓦特但小於或等於20毫瓦特或小於或等於30毫瓦特或小於或等於40毫瓦特之光學功率操作二極體。在一實施例中,不以大於300毫瓦特之光學功率操作二極體。在一實施例中,在單模式而非多模式中操作二極體。Thus, in one embodiment, the diode is operated in a steep portion of the power/forward current curve. Operating in a non-steep portion of the power/forward current curve can result in incoherence of the radiation. In one embodiment, the diode is operated at an optical power greater than 5 milliwatts but less than or equal to 20 milliwatts or less than or equal to 30 milliwatts or less than or equal to 40 milliwatts. In one embodiment, the diodes are not operated with optical power greater than 300 milliwatts. In an embodiment, the diodes are operated in a single mode rather than a multi-mode.

陣列200上之個別可定址器件102的數目可尤其(且在一定程度上亦如上文所敍述)取決於陣列200意欲覆蓋的曝光區域之長度、在曝光期間移動該陣列之速率、光點大小(亦即,自個別可定址器件102投影於基板上之光點的橫截面尺寸,例如,寬度/直徑)、個別可定址器件中之每一者應提供的所要強度(例如,無論是否需要遍及一個以上個別可定址器件而擴展基板上之光點的所意欲劑量以避免對基板或基板上之抗蝕劑的損害)、基板之所要掃描速率、成本考慮、可開啟或關閉個別可定址器件之頻率,及針對冗餘個別可定址器件102之需要(如早期所論述;例如,(例如)在一或多個個別可定址器件發生故障的情況下用於校正曝光或作為儲備物)。在一實施例中,陣列200包含至少100個個別可定址器件102,例如,至少200個個別可定址器件、至少400個個別可定址器件、至少600個個別可定址器件、至少1000個個別可定址器件、至少1500個個別可定址器件、至少2500個個別可定址器件,或至少5000個個別可定址器件。在一實施例中,陣列200包含50000個以下個別可定址器件102,例如,25000個以下個別可定址器件、15000個以下個別可定址器件、10000個以下個別可定址器件、7500個以下個別可定址器件、5000個以下個別可定址器件、2500個以下個別可定址器件、1200個以下個別可定址器件、600個以下個別可定址器件,或300個以下個別可定址器件。The number of individual addressable devices 102 on array 200 can be particularly (and to some extent also as described above) depending on the length of the exposed area that array 200 is intended to cover, the rate at which the array is moved during exposure, and the spot size ( That is, the cross-sectional dimensions of the spot from the individual addressable device 102 projected onto the substrate, for example, width/diameter, and the desired strength of each of the individually addressable devices (eg, whether or not it is required to be used throughout The above-described individual addressable devices extend the intended dose of the spot on the substrate to avoid damage to the resist on the substrate or substrate), the desired scan rate of the substrate, cost considerations, the frequency with which individual addressable devices can be turned on or off. And for the need for redundant individual addressable devices 102 (as discussed earlier; for example, for the purpose of correcting exposure or as a reserve in the event of a failure of one or more individual addressable devices). In one embodiment, array 200 includes at least 100 individual addressable devices 102, for example, at least 200 individual addressable devices, at least 400 individual addressable devices, at least 600 individual addressable devices, at least 1000 individually addressable Device, at least 1500 individually addressable devices, at least 2500 individually addressable devices, or at least 5000 individually addressable devices. In one embodiment, array 200 includes 50,000 individual addressable devices 102, such as 25,000 individual addressable devices, 15,000 individual addressable devices, 10,000 individual addressable devices, and less than 7500 individually addressable Devices, 5000 or less individually addressable devices, 2,500 individual addressable devices, 1200 individual addressable devices, 600 or less individually addressable devices, or 300 or less individually addressable devices.

在一實施例中,對於每一10公分之曝光區域長度(亦即,將一陣列中之個別可定址器件的數目正規化成10公分之曝光區域長度),陣列200包含至少100個個別可定址器件102,例如,至少200個個別可定址器件、至少400個個別可定址器件、至少600個個別可定址器件、至少1000個個別可定址器件、至少1500個個別可定址器件、至少2500個個別可定址器件,或至少5000個個別可定址器件。在一實施例中,對於每一10公分之曝光區域長度(亦即,將一陣列中之個別可定址器件的數目正規化成10公分之曝光區域長度),陣列200包含50000個以下個別可定址器件102,例如,25000個以下個別可定址器件、15000個以下個別可定址器件、10000個以下個別可定址器件、7500個以下個別可定址器件、5000個以下個別可定址器件、2500個以下個別可定址器件、1200個以下個別可定址器件、600個以下個別可定址器件,或300個以下個別可定址器件。In one embodiment, array 200 includes at least 100 individual addressable devices for each 10 cm exposure area length (i.e., normalizing the number of individual addressable devices in an array to 10 cm exposure area length). 102, for example, at least 200 individual addressable devices, at least 400 individual addressable devices, at least 600 individual addressable devices, at least 1000 individual addressable devices, at least 1500 individual addressable devices, at least 2500 individually addressable Device, or at least 5000 individual addressable devices. In one embodiment, array 200 includes 50,000 individual addressable devices for each 10 cm exposure area length (ie, normalizing the number of individual addressable devices in an array to 10 cm exposure area length) 102, for example, 25,000 individual addressable devices, 15,000 individual addressable devices, 10,000 individual addressable devices, 7500 individual addressable devices, 5000 or less individually addressable devices, and 2500 or less individually addressable Devices, 1200 individual addressable devices, 600 individual addressable devices, or 300 or less individually addressable devices.

在一實施例中,陣列200包含75%以下冗餘個別可定址器件102,例如,67%或67%以下、50%或50%以下、約33%或33%以下、25%或25%以下、20%或20%以下、10%或10%以下,或5%或5%以下。在一實施例中,陣列200包含至少5%冗餘個別可定址器件102,例如,至少10%、至少25%、至少33%、至少50%,或至少65%。在一實施例中,該陣列包含約67%冗餘個別可定址器件。In one embodiment, array 200 includes less than 75% redundant individually addressable device 102, for example, 67% or less, 50% or less, about 33% or less, 25% or less. , 20% or less, 10% or less, or 5% or less. In an embodiment, array 200 includes at least 5% redundant individually addressable devices 102, for example, at least 10%, at least 25%, at least 33%, at least 50%, or at least 65%. In an embodiment, the array comprises about 67% redundant individually addressable devices.

在一實施例中,基板上之個別可定址器件的光點大小為10微米或10微米以下、5微米或5微米以下,例如,3微米或3微米以下、2微米或2微米以下、1微米或1微米以下、0.5微米或0.5微米以下、0.3微米或0.3微米以下,或約0..1微米。在一實施例中,基板上之個別可定址器件的光點大小為0.1微米或0.1微米以上、0.2微米或0.2微米以上、0.3微米或0.3微米以上、0.5微米或0.5微米以上、0.7微米或0.7微米以上、1微米或1微米以上、1.5微米或1.5微米以上、2微米或2微米以上,或5微米或5微米以上。在一實施例中,光點大小為約0.1微米。在一實施例中,光點大小為約0.5微米。在一實施例中,光點大小為約1微米。在微影裝置100之操作中,使用(例如)機器人處置器(圖中未繪示)將基板114裝載至基板台106上。接著使基板114在框架160及個別可定址器件102下方於X方向上位移。藉由位階感測器及/或對準感測器150量測基板114,且接著使用個別可定址器件102將基板114曝光至圖案,如上文所描述。可操作個別可定址器件102,例如,以提供本文中所論述之像素柵格成像。In one embodiment, the individual addressable devices on the substrate have a spot size of 10 microns or less, 5 microns or less, for example, 3 microns or less, 2 microns or less, 1 micron. Or less than 1 micron, 0.5 micron or less, 0.3 micron or less, or about 0.. 1 micron. In one embodiment, the individual addressable devices on the substrate have a spot size of 0.1 micron or more, 0.2 micron or more, 0.3 micron or more, 0.5 micron or more, 0.7 micron or 0.7. Above micron, 1 micron or more, 1.5 micron or more, 2 micron or more, or 5 micron or more. In one embodiment, the spot size is about 0.1 microns. In one embodiment, the spot size is about 0.5 microns. In one embodiment, the spot size is about 1 micron. In operation of the lithography apparatus 100, the substrate 114 is loaded onto the substrate stage 106 using, for example, a robotic handler (not shown). Substrate 114 is then displaced in the X direction below frame 160 and individual addressable device 102. Substrate 114 is measured by level sensor and/or alignment sensor 150, and then substrate 114 is exposed to a pattern using individual addressable device 102, as described above. The individual addressable device 102 can be operated, for example, to provide pixel grid imaging as discussed herein.

圖8描繪根據本發明之一實施例之微影裝置的示意性側視圖。如圖8所示,微影裝置100包含圖案化元件104及投影系統108。投影系統108包含兩個透鏡176、172。第一透鏡176經配置以自圖案化元件104接收經調變輻射光束110,且將其聚焦通過孔徑光闌174中之對比孔隙。另外透鏡(圖中未繪示)可位於該孔隙中。輻射光束110接著發散且藉由第二透鏡172(例如,場透鏡)聚焦。投影系統108進一步包含經配置以接收經調變輻射光束110之透鏡陣列170。對應於圖案化元件104中之個別可控制器件中之一或多者的經調變輻射光束110之不同部分傳遞通過透鏡陣列170中之各別不同透鏡。每一透鏡將經調變輻射光束110之各別部分聚焦至位於基板114上之點。以此方式,將輻射光點S陣列(見圖12)曝光至基板114上。應瞭解,儘管僅展示所說明之透鏡陣列170之五個透鏡,但該透鏡陣列可包含數百個或數千個透鏡(用作圖案化元件104之個別可控制器件亦如此)。如圖8所示,自由工作距離FWD提供於基板114與透鏡陣列170之間。此距離允許移動基板114及/或透鏡陣列170以允許(例如)聚焦校正。在一實施例中,自由工作距離係在1毫米至3毫米之範圍內,例如,約1.4毫米。圖案化元件104之個別可定址器件係以間距P而配置,此情形導致基板114處之成像光點的關聯間距P。在一實施例中,透鏡陣列170可提供0.15或0.18之NA。在一實施例中,成像光點大小為大約1.6微米。Figure 8 depicts a schematic side view of a lithography apparatus in accordance with an embodiment of the present invention. As shown in FIG. 8, lithography apparatus 100 includes a patterned element 104 and a projection system 108. Projection system 108 includes two lenses 176, 172. The first lens 176 is configured to receive the modulated radiation beam 110 from the patterning element 104 and focus it through the contrast apertures in the aperture stop 174. In addition, a lens (not shown) may be located in the aperture. The radiation beam 110 then diverge and is focused by a second lens 172 (eg, a field lens). Projection system 108 further includes a lens array 170 configured to receive modulated radiation beam 110. Different portions of the modulated radiation beam 110 corresponding to one or more of the individual controllable elements in the patterned element 104 are transmitted through respective different lenses in the lens array 170. Each lens focuses a respective portion of the modulated radiation beam 110 to a point on the substrate 114. In this manner, an array of radiation spots S (see FIG. 12) is exposed onto the substrate 114. It should be understood that although only five lenses of the illustrated lens array 170 are shown, the lens array can include hundreds or thousands of lenses (as well as individual controllable devices used as the patterned elements 104). As shown in FIG. 8, a free working distance FWD is provided between the substrate 114 and the lens array 170. This distance allows the substrate 114 and/or lens array 170 to be moved to allow, for example, focus correction. In one embodiment, the free working distance is in the range of 1 mm to 3 mm, for example, about 1.4 mm. The individual addressable devices of the patterned elements 104 are arranged at a pitch P, which results in an associated pitch P of the imaging spots at the substrate 114. In an embodiment, lens array 170 can provide an NA of 0.15 or 0.18. In one embodiment, the imaging spot size is approximately 1.6 microns.

在此實施例中,投影系統108可為1:1投影系統,此在於:基板114上之影像光點的陣列間隔係與圖案化元件104之像素的陣列間隔相同。為了提供改良型解析度,影像光點可顯著地小於圖案化元件104之像素。圖9描繪根據本發明之一實施例之微影裝置的示意性側視圖。在此實施例中,除了透鏡陣列170以外,在圖案化元件104與基板114之間不存在光學器件。圖9之微影裝置100包含圖案化元件104及投影系統108。在此情況下,投影系統108僅包含經配置以接收經調變輻射光束110之透鏡陣列170。對應於圖案化元件104中之個別可控制器件中之一或多者的經調變輻射光束110之不同部分傳遞通過透鏡陣列170中之各別不同透鏡。每一透鏡將經調變輻射光束110之各別部分聚焦至位於基板114上之點。以此方式,將輻射光點S陣列(見圖12)曝光至基板114上。應瞭解,儘管僅展示所說明之透鏡陣列170之五個透鏡,但該透鏡陣列可包含數百個或數千個透鏡(用作圖案化元件104之個別可控制器件亦如此)。如同在圖8中,自由工作距離FWD提供於基板114與透鏡陣列170之間。此距離允許移動基板114及/或透鏡陣列170以允許(例如)聚焦校正。圖案化元件104之個別可定址器件係以間距P而配置,此情形導致基板114處之成像光點的關聯間距P。在一實施例中,透鏡陣列170可提供0.15之NA。在一實施例中,成像光點大小為大約1.6微米。In this embodiment, the projection system 108 can be a 1:1 projection system in that the array spacing of image spots on the substrate 114 is the same as the array spacing of the pixels of the patterning element 104. To provide improved resolution, the image spot can be significantly smaller than the pixels of patterned element 104. Figure 9 depicts a schematic side view of a lithography apparatus in accordance with an embodiment of the present invention. In this embodiment, there is no optics between the patterned element 104 and the substrate 114 other than the lens array 170. The lithography apparatus 100 of FIG. 9 includes a patterned element 104 and a projection system 108. In this case, projection system 108 includes only lens array 170 configured to receive modulated radiation beam 110. Different portions of the modulated radiation beam 110 corresponding to one or more of the individual controllable elements in the patterned element 104 are transmitted through respective different lenses in the lens array 170. Each lens focuses a respective portion of the modulated radiation beam 110 to a point on the substrate 114. In this manner, an array of radiation spots S (see FIG. 12) is exposed onto the substrate 114. It should be understood that although only five lenses of the illustrated lens array 170 are shown, the lens array can include hundreds or thousands of lenses (as well as individual controllable devices used as the patterned elements 104). As in FIG. 8, the free working distance FWD is provided between the substrate 114 and the lens array 170. This distance allows the substrate 114 and/or lens array 170 to be moved to allow, for example, focus correction. The individual addressable devices of the patterned elements 104 are arranged at a pitch P, which results in an associated pitch P of the imaging spots at the substrate 114. In an embodiment, lens array 170 can provide an NA of 0.15. In one embodiment, the imaging spot size is approximately 1.6 microns.

圖10描繪使用如上文關於圖5所描述之可移動個別可定址器件102的根據本發明之一實施例之微影裝置的示意性側視圖。在此實施例中,除了透鏡陣列170以外,在圖案化元件104與基板114之間不存在其他光學器件。10 depicts a schematic side view of a lithography apparatus in accordance with an embodiment of the present invention using a movable individual addressable device 102 as described above with respect to FIG. In this embodiment, there are no other optics between the patterned element 104 and the substrate 114 other than the lens array 170.

圖10之微影裝置100包含圖案化元件104及投影系統108。在此情況下,投影系統108僅包含經配置以接收經調變輻射光束110之透鏡陣列170。對應於圖案化元件104中之個別可控制器件中之一或多者的經調變輻射光束110之不同部分傳遞通過透鏡陣列170中之各別不同透鏡。每一透鏡將經調變輻射光束110之各別部分聚焦至位於基板114上之點。以此方式,將輻射光點S陣列(見圖12)曝光至基板114上。應瞭解,儘管僅展示所說明之透鏡陣列170之五個透鏡,但該透鏡陣列可包含數百個或數千個透鏡(用作圖案化元件104之個別可控制器件亦如此)。如同在圖8中,自由工作距離FWD提供於基板114與透鏡陣列170之間。此距離允許移動基板114及/或透鏡陣列170以允許(例如)聚焦校正。圖案化元件104之個別可定址器件係以間距P而配置,此情形導致基板114處之成像光點的關聯間距P。在一實施例中,透鏡陣列170可提供0.15之NA。在一實施例中,成像光點大小為大約1.6微米。The lithography apparatus 100 of FIG. 10 includes a patterned element 104 and a projection system 108. In this case, projection system 108 includes only lens array 170 configured to receive modulated radiation beam 110. Different portions of the modulated radiation beam 110 corresponding to one or more of the individual controllable elements in the patterned element 104 are transmitted through respective different lenses in the lens array 170. Each lens focuses a respective portion of the modulated radiation beam 110 to a point on the substrate 114. In this manner, an array of radiation spots S (see FIG. 12) is exposed onto the substrate 114. It should be understood that although only five lenses of the illustrated lens array 170 are shown, the lens array can include hundreds or thousands of lenses (as well as individual controllable devices used as the patterned elements 104). As in FIG. 8, the free working distance FWD is provided between the substrate 114 and the lens array 170. This distance allows the substrate 114 and/or lens array 170 to be moved to allow, for example, focus correction. The individual addressable devices of the patterned elements 104 are arranged at a pitch P, which results in an associated pitch P of the imaging spots at the substrate 114. In an embodiment, lens array 170 can provide an NA of 0.15. In one embodiment, the imaging spot size is approximately 1.6 microns.

圖11說明複數個個別可定址器件102,特別為六個個別可定址器件102。在此實施例中,個別可定址器件102中之每一者為一輻射發射二極體,例如,藍紫色雷射二極體。每一輻射發射二極體橋接兩條電線,以將電流供應至輻射發射二極體以控制二極體。因此,二極體形成可定址柵格。兩條電線之間的寬度為大約250微米,且輻射發射二極體具有大約500微米之間距。FIG. 11 illustrates a plurality of individual addressable devices 102, particularly six individual addressable devices 102. In this embodiment, each of the individual addressable devices 102 is a radiation emitting diode, such as a blue-violet laser diode. Each of the radiation emitting diodes bridges two wires to supply current to the radiation emitting diode to control the diode. Therefore, the diode forms an addressable grid. The width between the two wires is about 250 microns and the radiation emitting diode has a distance of about 500 microns.

圖12示意性地說明可如何產生基板114上之圖案。實心圓圈表示藉由投影系統108中之透鏡陣列MLA投影至基板114上的光點S陣列。當一系列曝光被曝光於基板114上時,在X方向上相對於投影系統108移動該基板。空心圓圈表示先前已被曝光於基板上之光點曝光SE。如所展示,藉由投影系統108內之透鏡陣列170投影至基板114上的每一光點將光點曝光之列R曝光於基板114上。藉由光點S中之每一者所曝光之光點曝光SE之所有列R的總和來產生用於基板114之完整圖案。此配置通常被稱作「像素柵格成像」。應瞭解,圖12為示意性圖式且光點S實務上可重疊。可看出,輻射光點S陣列係以相對於基板114之角度α而配置(基板114之邊緣平行於X方向及Y方向)。進行此過程,使得當在掃描方向(X方向)上移動基板114時,每一輻射光點將傳遞遍及該基板之不同區域,藉此允許藉由輻射光點S陣列來覆蓋整個基板。在一實施例中,角度α為至多20°、10°,例如,至多5°、至多3°、至多1°、至多0.5°、至多0.25°、至多0.10°、至多0.05°,或至多0.01°。在一實施例中,角度α為至少0.0001°,例如,至少0.001°。根據在垂直於掃描方向之方向上的影像光點大小及陣列間隔而判定在掃描方向上陣列之傾斜角α及寬度,以確保定址基板114之整個表面區域。Figure 12 schematically illustrates how a pattern on substrate 114 can be created. The solid circles represent an array of spots S projected onto the substrate 114 by the lens array MLA in the projection system 108. When a series of exposures are exposed on the substrate 114, the substrate is moved relative to the projection system 108 in the X direction. The open circles indicate the spot exposure SE that has been previously exposed on the substrate. As shown, the spot exposure column R is exposed on the substrate 114 by each spot of light projected onto the substrate 114 by the lens array 170 within the projection system 108. A complete pattern for the substrate 114 is produced by exposing the sum of all columns R of SE exposed by the spot exposed by each of the spots S. This configuration is often referred to as "pixel raster imaging." It should be understood that FIG. 12 is a schematic diagram and that the spot S can be practically overlapped. It can be seen that the array of radiation spots S is arranged at an angle a relative to the substrate 114 (the edges of the substrate 114 are parallel to the X and Y directions). This process is performed such that when the substrate 114 is moved in the scanning direction (X direction), each of the radiation spots will be transmitted throughout different regions of the substrate, thereby allowing the entire substrate to be covered by the array of radiation spots S. In an embodiment, the angle α is at most 20°, 10°, for example, at most 5°, at most 3°, at most 1°, at most 0.5°, at most 0.25°, at most 0.10°, at most 0.05°, or at most 0.01°. . In an embodiment, the angle a is at least 0.0001°, for example, at least 0.001°. The tilt angle α and the width of the array in the scanning direction are determined based on the image spot size and array spacing in the direction perpendicular to the scanning direction to ensure that the entire surface area of the substrate 114 is addressed.

圖13示意性地展示可如何藉由使用複數個光學引擎而在單次掃描中曝光整個基板114,每一光學引擎包含一或多個個別可定址器件。藉由八個光學引擎產生八個輻射光點S陣列SA(圖中未繪示),該等光學引擎係以「棋盤形」或交錯組態而配置成兩列R1、R2,使得一輻射光點S陣列之邊緣與鄰近輻射光點S陣列之邊緣略微重疊。在一實施例中,光學引擎經配置成至少3列,例如,4列或5列。以此方式,輻射頻帶延伸橫越基板W之寬度,從而允許在單次掃描中執行整個基板之曝光。此「全寬度」單次通過曝光有助於避免連接兩次或兩次以上通過之可能壓合問題,且亦可減少機器佔據面積,此係因為基板可能無需在橫向於基板通過方向之方向上移動。應瞭解,可使用任何適當數目個光學引擎。在一實施例中,光學引擎之數目為至少1,例如,至少2、至少4、至少8、至少10、至少12、至少14,或至少17。在一實施例中,光學引擎之數目少於40,例如,少於30或少於20。每一光學引擎可包含一分離圖案化元件104,及(視情況)如上文所描述之一分離投影系統108及/或輻射系統。然而,應瞭解,兩個或兩個以上光學引擎可共用輻射系統、圖案化元件104及/或投影系統108中之一或多者的至少一部分。Figure 13 schematically illustrates how the entire substrate 114 can be exposed in a single scan by using a plurality of optical engines, each optical engine comprising one or more individually addressable devices. Eight radiation spot S arrays SA (not shown) are generated by eight optical engines, and the optical engines are arranged in two rows R1, R2 in a "checkerboard" or staggered configuration, so that a radiation The edge of the point S array slightly overlaps the edge of the array of adjacent radiation spots S. In an embodiment, the optical engine is configured to have at least 3 columns, for example, 4 columns or 5 columns. In this manner, the radiation band extends across the width of the substrate W, allowing exposure of the entire substrate to be performed in a single scan. This "full width" single pass exposure helps to avoid possible press-fitting problems with two or more passes, and also reduces machine footprint because the substrate may not need to be oriented transverse to the direction of substrate pass. mobile. It should be appreciated that any suitable number of optical engines can be used. In an embodiment, the number of optical engines is at least 1, for example, at least 2, at least 4, at least 8, at least 10, at least 12, at least 14, or at least 17. In an embodiment, the number of optical engines is less than 40, for example, less than 30 or less than 20. Each optical engine can include a separate patterned element 104, and (as appropriate) separate projection system 108 and/or radiation system as described above. However, it should be appreciated that two or more optical engines may share at least a portion of one or more of the radiation system, the patterning element 104, and/or the projection system 108.

在本文中所描述之實施例中,提供控制器以控制個別可定址器件。舉例而言,在個別可定址器件為輻射發射元件之實例中,控制器可控制何時開啟或關閉個別可定址器件,且實現個別可定址器件之高頻率調變。控制器可控制藉由個別可定址器件中之一或多者發射之輻射的功率。控制器可調變藉由個別可定址器件中之一或多者發射之輻射的強度。控制器可橫越個別可定址器件陣列之全部或部分而控制/調整強度均一性。控制器可調整個別可定址器件之輻射輸出以校正成像誤差,例如,光展量及光學像差(例如,彗形像差、像散性,等等)。In the embodiments described herein, a controller is provided to control the individual addressable devices. For example, in an example where the individual addressable devices are radiating radiating elements, the controller can control when individual addressable devices are turned on or off and achieve high frequency modulation of the individual addressable devices. The controller can control the power of the radiation emitted by one or more of the individually addressable devices. The controller adjusts the intensity of the radiation emitted by one or more of the individual addressable devices. The controller can control/adjust intensity uniformity across all or a portion of the array of individually addressable devices. The controller can adjust the radiation output of the individual addressable devices to correct imaging errors, such as etendue and optical aberrations (eg, coma, astigmatism, etc.).

在微影中,可藉由選擇性地將基板上之抗蝕劑層曝光至輻射(例如,藉由將抗蝕劑層曝光至經圖案化輻射)而在基板上產生所要特徵。接收特定最小輻射劑量(「劑量臨限值」)的抗蝕劑之區域經歷化學反應,而其他區域保持不變。抗蝕劑層中之因此產生的化學差異允許顯影抗蝕劑,亦即,選擇性地移除至少已接收到最小劑量之區域或移除未接收到最小劑量之區域。結果,基板之部分仍受到抗蝕劑保護,而曝光供移除抗蝕劑的基板之區域,從而允許(例如)額外處理步驟,例如,基板之選擇性蝕刻、選擇性金屬沈積,等等,藉此產生所要特徵。圖案化輻射可藉由如下操作實現:設定圖案化元件中之個別可控制器件,使得在所要特徵內透射至基板上之抗蝕劑層之區域的輻射係在足夠高之強度下以使得該區域在曝光期間接收高於劑量臨限值之輻射劑量,而基板上之其他區域藉由設定對應個別可控制器件以提供零或顯著更低輻射強度來接收低於劑量臨限值之輻射劑量。In lithography, the desired features can be produced on the substrate by selectively exposing the resist layer on the substrate to radiation (e.g., by exposing the resist layer to patterned radiation). The area of the resist that receives a particular minimum radiation dose ("dose threshold") undergoes a chemical reaction while the other areas remain unchanged. The resulting chemical differences in the resist layer allow for the development of the resist, i.e., selectively removing at least the region where the minimum dose has been received or removing the region where the minimum dose has not been received. As a result, portions of the substrate are still protected by the resist and exposed to areas of the substrate from which the resist is removed, thereby allowing, for example, additional processing steps such as selective etching of the substrate, selective metal deposition, and the like, Thereby producing the desired features. Patterned radiation can be achieved by setting individual controllable devices in the patterned element such that the radiation transmitted to the region of the resist layer on the substrate within the desired feature is at a sufficiently high intensity such that the region Radiation doses above the dose threshold are received during exposure, while other regions on the substrate receive radiation doses below the dose threshold by setting corresponding individual controllable devices to provide zero or significantly lower radiation intensity.

實務上,即使設定個別可控制器件以在特徵邊界之一側上提供最大輻射強度且在另一側上提供最小輻射強度,所要特徵之邊緣處的輻射劑量亦可能不會自給定最大劑量突然地改變至零劑量。取而代之,歸因於繞射效應,輻射劑量之位準可橫越過渡區而下降。接著藉由經接收劑量下降至低於輻射劑量臨限值時之位置來判定在顯影抗蝕劑之後最終形成之所要特徵之邊界的位置。可藉由設定將輻射提供至處於特徵邊界上或附近的基板上之點的個別可控制器件不僅達最大強度位準或最小強度位準而且達在最大強度位準與最小強度位準之間的強度位準來更精確地控制橫越過渡區之輻射劑量下降之輪廓,且因此更精確地控制特徵邊界之精確位置。此情形通常被稱作「灰階化」(grayscaling)或「灰階層次化」(grayleveling)。In practice, even if individual controllable devices are set to provide maximum radiant intensity on one side of the feature boundary and minimum radiant intensity on the other side, the radiation dose at the edge of the desired feature may not be self-giving at the maximum dose abruptly Change to zero dose. Instead, due to the diffraction effect, the level of the radiation dose can fall across the transition zone. The position of the boundary of the desired feature that is ultimately formed after developing the resist is then determined by the position at which the received dose falls below the radiation dose threshold. Individual controllable devices that can provide points of radiation to a point on or near a feature boundary not only reach a maximum intensity level or a minimum intensity level but also between a maximum intensity level and a minimum intensity level The intensity level is used to more precisely control the profile of the radiation dose drop across the transition zone, and thus more precisely control the precise location of the feature boundaries. This situation is often referred to as "grayscaling" or "grayleveling".

相較於在一微影系統中可能提供之控制,灰階化可提供特徵邊界之位置的更大控制,在該微影系統中,僅可將藉由給定個別可控制器件提供至基板之輻射強度設定至兩個值(即,僅僅最大值及最小值)。在一實施例中,可將至少三個不同輻射強度值投影至基板上,例如,至少4個輻射強度值、至少8個輻射強度值、至少16個輻射強度值、至少32個輻射強度值、至少64個輻射強度值、至少100個輻射強度值、至少128個輻射強度值,或至少256個輻射強度值。若圖案化元件為輻射源自身(例如,發光二極體或雷射二極體陣列),則可(例如)藉由控制經透射之輻射的強度位準來實現灰階化。若對比元件為微鏡面元件,則可(例如)藉由控制微鏡面之傾斜角來實現灰階化。又,可藉由分組對比元件中之複數個可程式化器件且控制在給定時間開啟或關閉的群組內之器件的數目來實現灰階化。Grayning can provide greater control over the location of feature boundaries in comparison to the controls that may be provided in a lithography system in which only a given individual controllable device can be provided to the substrate. The radiation intensity is set to two values (ie, only the maximum and minimum values). In an embodiment, at least three different radiant intensity values can be projected onto the substrate, for example, at least 4 radiant intensity values, at least 8 radiant intensity values, at least 16 radiant intensity values, at least 32 radiant intensity values, At least 64 radiation intensity values, at least 100 radiation intensity values, at least 128 radiation intensity values, or at least 256 radiation intensity values. If the patterned element is the radiation source itself (eg, a light emitting diode or a laser diode array), gray scale can be achieved, for example, by controlling the intensity level of the transmitted radiation. If the contrast element is a micromirror element, grayscale can be achieved, for example, by controlling the tilt angle of the micromirror. Again, grayscale can be achieved by grouping a plurality of programmable devices in the component and controlling the number of devices in the group that are turned on or off at a given time.

在一實例中,圖案化元件可具有一系列狀態,該等狀態包括:(a)所提供輻射對其對應像素之強度分佈有最小貢獻或甚至有零貢獻的黑色狀態;(b)所提供輻射產生最大貢獻之最白狀態;及(c)所提供輻射產生中間貢獻之複數個狀態。該等狀態被劃分成用於正常光束圖案化/印刷之正常集合,及用於補償有缺陷器件之效應的補償集合。正常集合包含黑色狀態,及中間狀態之第一群組。此第一群組將被描述為灰色狀態,且該等灰色狀態係可選擇以向對應像素強度提供自最小黑色值直至特定正常最大值之逐漸增加的貢獻。補償集合包含中間狀態之剩餘第二群組,連同最白狀態。中間狀態之此第二群組將被描述為白色狀態,且該等白色狀態係可選擇以提供大於正常最大值之貢獻,從而逐漸地增加直至對應於最白狀態之真實最大值。儘管中間狀態之第二群組被描述為白色狀態,但應瞭解,此情形僅僅係促進區別正常曝光步驟與補償曝光步驟。或者,整個複數個狀態可被描述為在黑色與白色之間的灰色狀態序列,該等灰色狀態係可選擇以實現灰階印刷。In an example, the patterned element can have a series of states including: (a) a black state in which the provided radiation has a minimum contribution or even a zero contribution to the intensity distribution of its corresponding pixel; (b) the provided radiation The whitest state that produces the greatest contribution; and (c) the plurality of states in which the radiation provided produces an intermediate contribution. The states are divided into a normal set for normal beam patterning/printing, and a compensation set for compensating for the effects of defective devices. The normal set contains the black state, and the first group of intermediate states. This first group will be described as a gray state, and the gray states are selectable to provide a progressively increasing contribution from the minimum black value to a particular normal maximum to the corresponding pixel intensity. The compensation set contains the remaining second group of intermediate states, along with the whitest state. This second group of intermediate states will be described as a white state, and the white states are selectable to provide a contribution greater than the normal maximum, thereby gradually increasing until the true maximum corresponding to the whitest state is reached. Although the second group of intermediate states is described as a white state, it should be understood that this situation merely facilitates the distinction between the normal exposure step and the compensated exposure step. Alternatively, the entire plurality of states can be described as a sequence of gray states between black and white, which are selectable to achieve grayscale printing.

應瞭解,可出於上文所描述之目的之額外或替代目的而使用灰階化。舉例而言,可調諧在曝光之後基板之處理,使得取決於經接收輻射劑量位準,存在基板之區域的兩個以上潛在回應。舉例而言,接收低於第一臨限值之輻射劑量的基板之部分以第一方式作出回應;接收高於第一臨限值但低於第二臨限值之輻射劑量的基板之部分以第二方式作出回應;且接收高於第二臨限值之輻射劑量的基板之部分以第三方式作出回應。因此,灰階化可用以橫越基板而提供具有兩個以上所要劑量位準之輻射劑量輪廓。在一實施例中,輻射劑量輪廓具有至少2個所要劑量位準,例如,至少3個所要輻射劑量位準、至少4個所要輻射劑量位準、至少6個所要輻射劑量位準,或至少8個所要輻射劑量位準。It will be appreciated that grayscale can be used for additional or alternative purposes for the purposes described above. For example, the processing of the substrate after exposure can be tuned such that there are more than two potential responses to the area of the substrate depending on the received radiation dose level. For example, a portion of a substrate that receives a radiation dose that is below a first threshold is responsive in a first manner; a portion of the substrate that receives a radiation dose that is above a first threshold but below a second threshold is The second mode responds; and the portion of the substrate that receives the radiation dose above the second threshold responds in a third manner. Thus, gray scale can be used to provide a radiation dose profile having more than two desired dose levels across the substrate. In one embodiment, the radiation dose profile has at least 2 desired dose levels, for example, at least 3 desired radiation dose levels, at least 4 desired radiation dose levels, at least 6 desired radiation dose levels, or at least 8 The dose level to be irradiated.

應進一步瞭解,可藉由除了如上文所描述的藉由僅僅控制在基板上之每一點處所接收之輻射之強度以外的方法來控制輻射劑量輪廓。舉例而言,或者或另外,藉由基板上之每一點接收之輻射劑量可藉由控制該點之曝光的持續時間進行控制。作為一另外實例,基板上之每一點可在複數次順次曝光中潛在地接收輻射。因此,或者或另外,藉由每一點接收之輻射劑量可藉由使用該複數次順次曝光之選定子集來曝光該點進行控制。It will be further appreciated that the radiation dose profile can be controlled by a method other than controlling the intensity of the radiation received at each point on the substrate except as described above. For example, or alternatively, the amount of radiation received by each point on the substrate can be controlled by controlling the duration of exposure at that point. As a further example, each point on the substrate can potentially receive radiation in a plurality of sequential exposures. Thus, or alternatively, the radiation dose received by each point can be controlled by exposing the point using a selected subset of the plurality of sequential exposures.

為了在基板上形成圖案,有必要在曝光程序期間之每一階段將圖案化元件中之個別可控制器件中之每一者設定至必需狀態。因此,必須將表示必需狀態之控制信號傳輸至個別可控制器件中之每一者。理想地,微影裝置包括產生控制信號之控制器400。可將待形成於基板上之圖案以向量定義格式(例如,GDSII)提供至微影裝置。為了將設計資訊轉換成用於每一個別可控制器件之控制信號,控制器包括一或多個資料操縱元件,該一或多個資料操縱元件各自經組態以對表示圖案之資料串流執行處理步驟。資料操縱元件可被共同地稱作「資料路徑」(datapath)。In order to form a pattern on the substrate, it is necessary to set each of the individual controllable devices in the patterned elements to a necessary state at each stage during the exposure process. Therefore, a control signal indicating the necessary state must be transmitted to each of the individual controllable devices. Ideally, the lithography apparatus includes a controller 400 that generates control signals. The pattern to be formed on the substrate can be provided to the lithography apparatus in a vector definition format (eg, GDSII). In order to convert design information into control signals for each individual controllable device, the controller includes one or more data manipulation elements, each of which is configured to perform a stream of data representing the pattern Processing steps. Data manipulation elements can be collectively referred to as "datapaths."

資料路徑之資料操縱元件可經組態以執行以下功能中之一或多者:將以向量為基礎之設計資訊轉換成位元映像圖案資料;將位元映像圖案資料轉換成所需輻射劑量映像(即,橫越基板之所需輻射劑量輪廓);將所需輻射劑量映像轉換成每一個別可控制器件之所需輻射強度值;及將每一個別可控制器件之所需輻射強度值轉換成對應控制信號。在一實施例中,可藉由有線或無線通信將控制信號供應至個別可控制器件102及/或一或多個其他元件(例如,感測器)。另外,可將來自個別可控制器件102及/或來自一或多個其他元件(例如,感測器)之信號傳達至控制器400。參看圖14(A),在一無線實施例中,收發器(或僅僅傳輸器)406發射體現用於藉由收發器(或僅僅接收器)402接收之控制信號的信號。藉由一或多條線404將控制信號傳輸至各別個別可控制器件102。在一實施例中,來自收發器406之信號可體現多個控制信號,且收發器402可將信號解多工成用於各別個別可控制器件102及/或一或多個其他元件(例如,感測器)之多個控制信號。在一實施例中,無線傳輸可藉由射頻(RF)。The data manipulation element of the data path can be configured to perform one or more of the following functions: converting vector-based design information into bitmap image pattern data; converting the bitmap image pattern data to a desired radiation dose image (ie, the desired radiation dose profile across the substrate); converting the desired radiation dose image to the desired radiation intensity value for each individual controllable device; and converting the desired radiation intensity value for each individual controllable device Into the corresponding control signal. In an embodiment, control signals may be supplied to individual controllable devices 102 and/or one or more other components (eg, sensors) by wired or wireless communication. Additionally, signals from individual controllable devices 102 and/or from one or more other components (eg, sensors) may be communicated to controller 400. Referring to FIG. 14(A), in a wireless embodiment, a transceiver (or transmitter only) 406 transmits a signal embodying a control signal for reception by a transceiver (or receiver only) 402. The control signals are transmitted to the respective individually controllable devices 102 by one or more lines 404. In one embodiment, the signals from transceiver 406 may embody a plurality of control signals, and transceiver 402 may demultiplex the signals for respective individually controllable devices 102 and/or one or more other components (eg, , sensor) multiple control signals. In an embodiment, the wireless transmission may be by radio frequency (RF).

參看圖14(B),在一有線實施例中,一或多條線404可將控制器400連接至個別可控制器件102及/或一或多個其他元件(例如,感測器)。在一實施例中,可提供單一線404以將控制信號中之每一者攜載至陣列200本體及/或自陣列200本體攜載控制信號中之每一者。在陣列200本體處,可接著將控制信號個別地提供至個別可控制器件102及/或一或多個其他元件(例如,感測器)。舉例而言,如同無線實例,控制信號可經多工以用於傳輸於單一線上,且接著經解多工以用於提供至個別可控制器件102及/或一或多個其他元件(例如,感測器)。在一實施例中,可提供複數條線404以攜載個別可控制器件102及/或一或多個其他元件(例如,感測器)之各別控制信號。在陣列200係可旋轉之實施例中,可沿著旋轉軸線A提供線404。在一實施例中,可經由在馬達216處或周圍之滑動接點將信號提供至陣列200本體或自陣列200本體提供信號。此情形可對於可旋轉實施例係有利的。該滑動接點可經由(例如)接觸一板之刷子。Referring to Figure 14(B), in a wired embodiment, one or more lines 404 can connect controller 400 to individual controllable devices 102 and/or one or more other components (e.g., sensors). In an embodiment, a single line 404 can be provided to carry each of the control signals to the array 200 body and/or to carry each of the control signals from the array 200 body. At the body of array 200, control signals can then be provided individually to individual controllable devices 102 and/or one or more other components (eg, sensors). For example, like a wireless instance, control signals may be multiplexed for transmission on a single line, and then demultiplexed for providing to individual controllable devices 102 and/or one or more other components (eg, Sensor). In one embodiment, a plurality of lines 404 may be provided to carry individual control signals for individual controllable devices 102 and/or one or more other components (eg, sensors). In embodiments where the array 200 is rotatable, a line 404 can be provided along the axis of rotation A. In an embodiment, signals may be provided to or from the array 200 body via a sliding contact at or around the motor 216. This situation may be advantageous for a rotatable embodiment. The sliding contact can be contacted, for example, by a brush of a plate.

在一實施例中,線404可為光學線。在該情況下,信號可為光學信號,其中(例如)可在不同波長下攜載不同控制信號。以與控制信號類似之方式,可藉由有線或無線手段將功率供應至個別可控制器件102或一或多個其他元件(例如,感測器)。舉例而言,在一有線實施例中,可藉由一或多條線404供應功率,而無論線404是與攜載該等信號之線相同或是不同。可如上文所論述而提供滑動接點配置以傳輸功率。在一無線實施例中,可藉由RF耦合傳送功率。In an embodiment, line 404 can be an optical line. In this case, the signal can be an optical signal in which, for example, different control signals can be carried at different wavelengths. Power may be supplied to the individually controllable device 102 or one or more other components (e.g., sensors) by wired or wireless means in a manner similar to control signals. For example, in a wired embodiment, power may be supplied by one or more lines 404, regardless of whether line 404 is the same or different than the line carrying the signals. A sliding contact configuration can be provided to communicate power as discussed above. In a wireless embodiment, power can be transmitted by RF coupling.

雖然先前論述集中於供應至個別可控制器件102及/或一或多個其他元件(例如,感測器)之控制信號,但或者或此外,該等控制信號應被理解為經由適當組態而涵蓋信號自個別可控制器件102及/或自一或多個其他元件(例如,感測器)至控制器400之傳輸。因此,通信可為單向的(例如,僅至或自個別可控制器件102及/或一或多個其他元件(例如,感測器))或雙向的(亦即,自及至個別可控制器件102及/或一或多個其他元件(例如,感測器))。舉例而言,收發器402可多工來自個別可控制器件102及/或來自一或多個其他元件(例如,感測器)之多個信號以用於傳輸至收發器406,該信號在收發器406處可經解多工成個別信號。While the previous discussion has focused on control signals supplied to individual controllable devices 102 and/or one or more other components (eg, sensors), or alternatively, such control signals should be understood as being via appropriate configuration. The transmission of signals from individual controllable devices 102 and/or from one or more other components (eg, sensors) to controller 400 is contemplated. Thus, the communication can be unidirectional (eg, only to or from individual controllable devices 102 and/or one or more other components (eg, sensors)) or bidirectional (ie, from and to individual controllable devices) 102 and/or one or more other components (eg, sensors)). For example, transceiver 402 can multiplex multiple signals from individual controllable devices 102 and/or from one or more other components (eg, sensors) for transmission to transceiver 406, which is transceiving The 406 can be multiplexed into individual signals.

在一實施例中,可更改用以提供圖案之控制信號以考量可影響基板上之圖案之適當供應及/或實現的因素。舉例而言,可將校正應用於控制信號以考量陣列200中之一或多者的加熱。此加熱可導致個別可控制器件102之指向方向改變、來自個別可控制器件102之輻射之均一性改變,等等。在一實施例中,可使用來自(例如)感測器234的與陣列200(例如,個別可控制器件102中之一或多者之陣列200)相關聯之經量測溫度及/或膨脹/收縮以更改原本被提供以形成圖案之控制信號。因此,例如,在曝光期間,個別可控制器件102之溫度可變化,該變化導致將在單一恆定溫度下所提供之經投影圖案改變。因此,可更改控制信號以考量此變化。類似地,在一實施例中,可使用來自對準感測器及/或位階感測器150之結果以更改藉由個別可控制器件102提供之圖案。可更改圖案以校正(例如)可由(例如)個別可控制器件102與基板114之間的光學器件(若存在)而引起的失真、基板114之定位中的不規則性、基板114之不均勻度,等等。In an embodiment, the control signals used to provide the pattern may be altered to account for factors that may affect the proper supply and/or implementation of the pattern on the substrate. For example, a correction can be applied to the control signal to account for heating of one or more of the arrays 200. This heating can result in a change in the direction of orientation of the individual controllable devices 102, a change in the uniformity of the radiation from the individual controllable devices 102, and the like. In an embodiment, the measured temperature and/or expansion associated with array 200 (eg, array 200 of one or more of individually controllable devices 102) may be used, for example, from sensor 234. Shrink to change the control signal that was originally provided to form the pattern. Thus, for example, during exposure, the temperature of the individually controllable device 102 can vary, resulting in a change in the projected pattern that will be provided at a single constant temperature. Therefore, the control signal can be changed to account for this change. Similarly, in an embodiment, the results from the alignment sensor and/or level sensor 150 can be used to modify the pattern provided by the individual controllable device 102. The pattern can be modified to correct, for example, distortion caused by, for example, optics (if present) between the individually controllable device 102 and the substrate 114, irregularities in the positioning of the substrate 114, unevenness of the substrate 114 ,and many more.

在一實施例中,可基於由經量測參數(例如,經量測溫度、藉由位階感測器之經量測距離,等等)而引起的關於所要圖案之物理/光學結果的理論而判定控制信號之改變。在一實施例中,可基於由經量測參數而引起的關於所要圖案之物理/光學結果的實驗或經驗模型而判定控制信號之改變。在一實施例中,可以前饋及/或回饋方式應用控制信號之改變。在一實施例中,微影裝置可包含感測器500以量測已或待藉由一或多個個別可控制器件102透射朝向基板之輻射的特性。此感測器可為光點感測器或透射影像感測器。感測器可用以(例如)判定來自個別可控制器件102之輻射的強度、來自個別可控制器件102之輻射的均一性、來自個別可控制器件102之輻射之光點的橫截面大小或面積,及/或來自個別可控制器件102之輻射之光點的部位(在X-Y平面中)。In an embodiment, the theory regarding the physical/optical results of the desired pattern may be based on the measured parameters (eg, measured temperature, measured distance by the level sensor, etc.) A change in the control signal is determined. In an embodiment, the change in control signal may be determined based on an experimental or empirical model of the physical/optical results of the desired pattern caused by the measured parameters. In an embodiment, the change of the control signal can be applied in a feedforward and/or feedback manner. In an embodiment, the lithography apparatus can include a sensor 500 to measure characteristics of radiation that has been or is to be transmitted by the one or more individually controllable devices 102 toward the substrate. The sensor can be a spot sensor or a transmission image sensor. The sensor can be used, for example, to determine the intensity of radiation from the individual controllable devices 102, the uniformity of radiation from the individual controllable devices 102, the cross-sectional size or area of the spots of radiation from the individual controllable devices 102, And/or from the spot of the radiation of the individual controllable device 102 (in the XY plane).

圖15描繪展示感測器500之一些實例部位的根據本發明之一實施例之微影裝置的示意性俯視圖。在一實施例中,一或多個感測器500提供於用以固持基板114之基板台106中或上。舉例而言,感測器500可提供於基板台106之前邊緣及/或基板台106之後邊緣處。在此實例中,展示四個感測器500,每一陣列200係針對一個感測器。理想地,該等感測器位於將不藉由基板116覆蓋之位置處。在一替代或額外實例中,感測器可提供於基板台106之側邊緣處,理想地提供於將不藉由基板116覆蓋之部位處。基板台106之前邊緣處的感測器500可用於個別可控制器件102之曝光前偵測。基板台106之後邊緣處的感測器500可用於個別可控制器件102之曝光後偵測。基板台106之側邊緣處的感測器500可用於個別可控制器件102在曝光期間之偵測(「在運作中」(on-the-fly)之偵測)。15 depicts a schematic top view of a lithography apparatus in accordance with an embodiment of the present invention showing some example portions of sensor 500. In one embodiment, one or more sensors 500 are provided in or on substrate table 106 for holding substrate 114. For example, the sensor 500 can be provided at the front edge of the substrate stage 106 and/or at the rear edge of the substrate stage 106. In this example, four sensors 500 are shown, each array 200 being directed to one sensor. Ideally, the sensors are located at locations that will not be covered by the substrate 116. In an alternative or additional example, a sensor can be provided at the side edge of the substrate stage 106, desirably at a location that will not be covered by the substrate 116. The sensor 500 at the front edge of the substrate stage 106 can be used for pre-exposure detection of the individually controllable device 102. The sensor 500 at the rear edge of the substrate stage 106 can be used for post-exposure detection of the individually controllable device 102. The sensor 500 at the side edge of the substrate stage 106 can be used for detection of the individually controllable device 102 during exposure ("on-the-fly" detection).

參看圖16(A),描繪根據本發明之一實施例之微影裝置之部分的示意性側視圖。在此實例中,僅描繪單一陣列200,且出於清晰起見而省略微影裝置之其他部分;本文中所描述之感測器可應用於陣列200中之每一者或一些。圖16(A)中描繪感測器500之部位的一些額外或替代實例(除了基板台106之感測器500以外)。第一實例為經由光束重新引導結構502(例如,反射鏡面配置)自個別可控制器件102接收輻射的在框架160上之感測器500。在此第一實例中,個別可控制器件102在X-Y平面中移動,且因此,可定位個別可控制器件102中之不同個別可控制器件以將輻射提供至光束重新引導結構502。第二額外或替代實例為自個別可控制器件102之背側(亦即,與供提供曝光輻射之側對置的側)接收來自個別可控制器件102之輻射的在框架160上之感測器500。在此第二實例中,個別可控制器件102在X-Y平面中移動,且因此,可定位個別可控制器件102中之不同個別可控制器件以將輻射提供至感測器500。雖然在第二實例中於曝光區域204處之個別可控制器件102的路徑中展示感測器500,但感測器500可位於描繪感測器510之處。在一實施例中,在框架160上之感測器500處於固定位置中,或另外可依靠(例如)關聯致動器而可移動。除了曝光前及/或曝光後感測以外或替代曝光前及/或曝光後感測,上文之第一實例及第二實例亦可用以提供「在運作中」之感測。第三實例為在結構504、506上之感測器500。結構504、506可藉由致動器508而可移動。在一實施例中,結構504位於路徑下方的基板台將移動之處(如圖16(A)所示)或位於路徑之側處。在一實施例中,結構504可藉由致動器508移動至圖16(A)中展示基板台106之感測器500所在的位置(若基板台106不處於此處),此移動可在Z方向上(如圖16(A)所示)或在X方向及/或Y方向上(若結構504處於路徑之側處)。在一實施例中,結構506位於路徑上方的基板台將移動之處(如圖16(A)所示)或位於路徑之側處。在一實施例中,結構506可藉由致動器508移動至圖16(A)中展示基板台106之感測器500所在的位置(若基板台106不處於此處)。結構506可附接至框架160且係相對於框架160可位移。Referring to Figure 16 (A), a schematic side view of a portion of a lithography apparatus in accordance with an embodiment of the present invention is depicted. In this example, only a single array 200 is depicted, and other portions of the lithography apparatus are omitted for clarity; the sensors described herein can be applied to each or some of the arrays 200. Some additional or alternative examples of the locations of the sensor 500 (other than the sensor 500 of the substrate stage 106) are depicted in FIG. 16(A). The first example is a sensor 500 on the frame 160 that receives radiation from the individually controllable device 102 via a beam redirecting structure 502 (eg, a mirrored configuration). In this first example, the individually controllable devices 102 are moved in the X-Y plane, and thus, different individual controllable devices in the individually controllable devices 102 can be positioned to provide radiation to the beam redirecting structure 502. A second additional or alternative example is a sensor on frame 160 that receives radiation from individual controllable devices 102 from the back side of individual controllable device 102 (i.e., the side opposite the side from which the exposure radiation is provided). 500. In this second example, the individually controllable devices 102 are moved in the X-Y plane, and thus, different individual controllable devices in the individually controllable devices 102 can be positioned to provide radiation to the sensor 500. Although the sensor 500 is shown in the path of the individual controllable device 102 at the exposure region 204 in the second example, the sensor 500 can be located where the sensor 510 is depicted. In an embodiment, the sensor 500 on the frame 160 is in a fixed position or otherwise movable, for example, by an associated actuator. The first and second examples above may also be used to provide "in operation" sensing, in addition to or in lieu of pre- and/or post-exposure sensing. A third example is sensor 500 on structures 504, 506. Structures 504, 506 are moveable by actuator 508. In one embodiment, structure 504 is located where the substrate table below the path will move (as shown in Figure 16 (A)) or at the side of the path. In an embodiment, the structure 504 can be moved by the actuator 508 to the position where the sensor 500 of the substrate stage 106 is shown in FIG. 16(A) (if the substrate stage 106 is not located here), the movement can be In the Z direction (as shown in Figure 16 (A)) or in the X and / or Y direction (if the structure 504 is at the side of the path). In one embodiment, structure 506 is located where the substrate table above the path will move (as shown in Figure 16 (A)) or at the side of the path. In one embodiment, structure 506 can be moved by actuator 508 to the location of sensor 500 where substrate stage 106 is shown in FIG. 16(A) (if substrate table 106 is not located). Structure 506 can be attached to frame 160 and is displaceable relative to frame 160.

在用以量測已或待藉由一或多個個別可控制器件102透射朝向基板之輻射之特性的操作中,藉由移動感測器500及/或移動個別可控制器件102之輻射光束而使感測器500位於來自個別可控制器件102之輻射的路徑中。因此,作為一實例,可移動基板台106以將感測器500定位於來自個別可控制器件102之輻射的路徑中,如圖16(A)所示。在此情況下,感測器500定位至曝光區域204處之個別可控制器件102的路徑中。在一實施例中,感測器500可定位至曝光區域204外部之個別可控制器件102(例如,在左側所展示之個別可控制器件102(若光束重新引導結構502不處於此處))的路徑中。一旦位於輻射之路徑中,感測器500隨即可偵測輻射且量測輻射之特性。為了促進感測,感測器500可相對於個別可控制器件102移動,及/或個別可控制器件102可相對於感測器500移動。In operation to measure the characteristics of radiation that has been or is to be transmitted by the one or more individually controllable devices 102 toward the substrate, by moving the sensor 500 and/or moving the radiation beam of the individually controllable device 102 The sensor 500 is placed in a path from the radiation of the individual controllable device 102. Thus, as an example, the substrate stage 106 can be moved to position the sensor 500 in a path from the radiation of the individual controllable device 102, as shown in Figure 16(A). In this case, sensor 500 is positioned into the path of individual controllable device 102 at exposure area 204. In an embodiment, the sensor 500 can be positioned to an individual controllable device 102 external to the exposed area 204 (eg, the individual controllable device 102 shown on the left side (if the beam redirecting structure 502 is not here)) In the path. Once in the path of the radiation, the sensor 500 can then detect the radiation and measure the characteristics of the radiation. To facilitate sensing, the sensor 500 can be moved relative to the individual controllable device 102, and/or the individual controllable device 102 can be moved relative to the sensor 500.

作為一另外實例,可將個別可控制器件102移動至一位置,使得來自個別可控制器件102之輻射照射光束重新引導結構502。光束重新引導結構502將光束引導至在框架160上之感測器500。為了促進感測,感測器500可相對於個別可控制器件102移動,及/或個別可控制器件102可相對於感測器500移動。在此實例中,在曝光區域204外部量測個別可控制器件102。在一實施例中,感測器500可為固定或移動的。若為固定的,則個別可控制器件102理想地係相對於固定感測器500可移動以促進感測。舉例而言,可相對於感測器500(例如,在框架160上之感測器500)移動(例如,旋轉或平移)陣列200以促進藉由感測器500之感測。若感測器500係可移動的(例如,在基板台106上之感測器500),則可使個別可控制器件102保持靜止以用於感測,或另外使其移動以(例如)加速感測。As a further example, the individual controllable devices 102 can be moved to a position such that the radiation illumination beams from the individual controllable devices 102 redirect the structure 502. The beam redirecting structure 502 directs the beam to the sensor 500 on the frame 160. To facilitate sensing, the sensor 500 can be moved relative to the individual controllable device 102, and/or the individual controllable device 102 can be moved relative to the sensor 500. In this example, individual controllable devices 102 are measured outside of exposed area 204. In an embodiment, the sensor 500 can be fixed or mobile. If fixed, the individually controllable device 102 is desirably movable relative to the fixed sensor 500 to facilitate sensing. For example, array 200 can be moved (eg, rotated or translated) relative to sensor 500 (eg, sensor 500 on frame 160) to facilitate sensing by sensor 500. If the sensor 500 is movable (eg, the sensor 500 on the substrate table 106), the individual controllable device 102 can be held stationary for sensing, or otherwise moved to, for example, accelerate Sensing.

可使用感測器500以校準個別可控制器件102中之一或多者。舉例而言,可在曝光之前藉由感測器500偵測個別可控制器件102之光點的部位且相應地校準系統。可接著基於光點之此預期部位而調控曝光(例如,控制基板114之位置、控制個別可控制器件102之位置、控制個別可控制器件102之關閉或開啟,等等)。另外,可隨後進行校準。舉例而言,可使用(例如)在基板台106之後邊緣上的感測器500而立即在曝光之後且在另外曝光之前進行校準。可在每一曝光之前、在特定數目次曝光之後等等進行校準。另外,可使用感測器500而「在運作中」偵測個別可控制器件102之光點的部位,且相應地調控曝光。或許可基於「在運作中」之感測而重新校準個別可控制器件102。Sensor 500 can be used to calibrate one or more of individually controllable devices 102. For example, the location of the spot of the individual controllable device 102 can be detected by the sensor 500 prior to exposure and the system calibrated accordingly. Exposure may then be adjusted based on this desired location of the spot (eg, controlling the position of the substrate 114, controlling the position of the individual controllable device 102, controlling the closing or opening of the individual controllable device 102, etc.). In addition, calibration can be performed subsequently. For example, calibration can be performed immediately after exposure, for example, on the trailing edge of substrate stage 106 and prior to additional exposure. Calibration can be performed before each exposure, after a certain number of exposures, and the like. In addition, the sensor 500 can be used to "detect" the location of the spot of the individually controllable device 102 and to adjust the exposure accordingly. Alternatively, the individual controllable device 102 may be recalibrated based on "in operation" sensing.

在一實施例中,可編碼一或多個個別可控制器件102,以便能夠偵測哪一個別可控制器件102處於特定位置或正被使用。在一實施例中,個別可控制器件102可具有標記,且感測器510可用以偵測可為RFID、條碼等等之標記。舉例而言,可移動複數個個別可控制器件102中之每一者以鄰近於感測器510以讀取標記。在認識到哪一個別可控制器件102鄰近於感測器510的情況下,有可能知道哪一個別可控制器件102鄰近於感測器500、處於曝光區域204中,等等。在一實施例中,每一個別可控制器件102可用以提供具有不同頻率之輻射,且感測器500、510可用以偵測哪一個別可控制器件102鄰近於感測器500、510。舉例而言,可移動複數個個別可控制器件102中之每一者以鄰近於感測器500、510以自個別可控制器件102接收輻射,且接著,感測器500、510可解多工經接收輻射以判定在特定時間哪一個別可控制器件102鄰近於感測器500、510。在此認識的情況下,有可能知道哪一個別可控制器件102鄰近於感測器500、處於曝光區域204中,等等。In one embodiment, one or more individually controllable devices 102 can be encoded to be able to detect which of the other controllable devices 102 is in a particular location or is being used. In an embodiment, the individual controllable device 102 can have indicia, and the sensor 510 can be used to detect indicia that can be RFID, barcode, and the like. For example, each of the plurality of individually controllable devices 102 can be moved adjacent to the sensor 510 to read the indicia. In the event that it is recognized which of the other controllable devices 102 is adjacent to the sensor 510, it is possible to know which of the other controllable devices 102 is adjacent to the sensor 500, in the exposed region 204, and the like. In an embodiment, each individual controllable device 102 can be used to provide radiation having different frequencies, and the sensors 500, 510 can be used to detect which of the other controllable devices 102 are adjacent to the sensors 500, 510. For example, each of the plurality of individually controllable devices 102 can be moved adjacent to the sensors 500, 510 to receive radiation from the individually controllable device 102, and then, the sensors 500, 510 can be demultiplexed Radiation is received to determine which of the other controllable devices 102 is adjacent to the sensors 500, 510 at a particular time. In this case, it is possible to know which of the other controllable devices 102 is adjacent to the sensor 500, is in the exposed area 204, and the like.

在一實施例中,如上文所論述,可提供位置感測器以判定在高達6個自由度中個別可控制器件102中之一或多者之位置。舉例而言,感測器510可用於位置偵測。在一實施例中,感測器510可包含干涉計。在一實施例中,感測器510可包含編碼器,該編碼器可用以偵測一或多個單維編碼器光柵及/或一或多個二維編碼器光柵。In an embodiment, as discussed above, a position sensor can be provided to determine the position of one or more of the individually controllable devices 102 in up to 6 degrees of freedom. For example, sensor 510 can be used for position detection. In an embodiment, the sensor 510 can include an interferometer. In an embodiment, the sensor 510 can include an encoder that can be used to detect one or more single-dimensional encoder gratings and/or one or more two-dimensional encoder gratings.

在一實施例中,可提供感測器520以判定已透射至基板之輻射的特性。在此實施例中,感測器520捕獲藉由基板重新引導之輻射。在一實例使用中,藉由感測器520捕獲之經重新引導輻射可用以促進判定來自個別可控制器件102之輻射之光點的部位(例如,來自個別可控制器件102之輻射之光點的未對準)。詳言之,感測器520可捕獲自基板之剛剛經曝光部分重新引導的輻射(亦即,潛影)。此尾部經重新引導輻射之強度的量測可給出是否已適當地對準光點之指示。舉例而言,此尾部之重複量測可給出重複性信號,自該重複性信號之偏差將指示光點之未對準(例如,異相信號可指示未對準)。圖16(B)描繪感測器520之偵測區域相對於基板114之經曝光區域522的示意性位置。在此實施例中,展示三個偵測區域,該等偵測區域之結果可經比較及/或組合以促進辨識未對準。僅需要使用一個偵測區域,例如,在左側之偵測區域。在一實施例中,可以與感測器520類似之方式使用個別可控制器件102之偵測器262。舉例而言,可使用在右側之陣列200之曝光區域204外部的一或多個個別可控制器件102以偵測自基板上之潛影重新引導的輻射。In an embodiment, sensor 520 can be provided to determine the characteristics of the radiation that has been transmitted to the substrate. In this embodiment, sensor 520 captures radiation that is redirected by the substrate. In an example use, the redirected radiation captured by sensor 520 can be used to facilitate determining the location of the spot of radiation from the individual controllable device 102 (eg, the spot of radiation from the individual controllable device 102). Not aligned). In particular, sensor 520 can capture radiation (i.e., latent image) that has been redirected from the exposed portion of the substrate. The measurement of the intensity of this tailed redirected radiation can give an indication of whether the spot has been properly aligned. For example, the repeat measurement of the tail can give a repeatability signal, the deviation from the repeatability signal will indicate a misalignment of the spots (eg, the out-of-phase signal can indicate misalignment). FIG. 16(B) depicts a schematic location of the detected area of sensor 520 relative to exposed area 522 of substrate 114. In this embodiment, three detection zones are shown, the results of which can be compared and/or combined to facilitate identification misalignment. Only one detection area is needed, for example, the detection area on the left side. In an embodiment, the detector 262 of the individually controllable device 102 can be used in a similar manner to the sensor 520. For example, one or more individually controllable devices 102 external to the exposed area 204 of the array 200 on the right side can be used to detect radiation redirected from the latent image on the substrate.

圖17描繪微影裝置之一實施例。在此實施例中,複數個個別可控制器件102將輻射引導朝向可旋轉多邊形600。輻射所照射的多邊形600之表面604將輻射重新引導朝向透鏡陣列170。透鏡陣列170將輻射引導朝向基板114。在曝光期間,多邊形600圍繞軸線602旋轉,從而導致來自複數個個別可控制器件102中之每一者的各別光束橫越透鏡陣列170在Y方向上移動。具體而言,當用輻射照射多邊形600之每一新刻面時,光束將橫越透鏡陣列170在正Y方向上重複地掃描。在曝光期間調變個別可控制器件102以提供本文中所論述之所要圖案。多邊形可具有任何數目個適當側。另外,用旋轉多邊形600在時序方面調變個別可控制器件102,使得各別光束照射透鏡陣列170之透鏡。在一實施例中,可將另外複數個個別可控制器件102提供於多邊形之對置側上(亦即,在右側),以便導致輻射照射多邊形600之表面606。Figure 17 depicts an embodiment of a lithography apparatus. In this embodiment, a plurality of individual controllable devices 102 direct radiation toward the rotatable polygon 600. The surface 604 of the polygon 600 illuminated by the radiation redirects the radiation toward the lens array 170. Lens array 170 directs radiation toward substrate 114. During exposure, the polygon 600 rotates about the axis 602, causing individual beams from each of the plurality of individually controllable devices 102 to move across the lens array 170 in the Y direction. In particular, when each new facet of the polygon 600 is illuminated with radiation, the beam will be repeatedly scanned across the lens array 170 in the positive Y direction. The individual controllable devices 102 are modulated during exposure to provide the desired pattern discussed herein. A polygon can have any number of suitable sides. Additionally, the individual controllable devices 102 are modulated in time series with a rotating polygon 600 such that the individual beams illuminate the lens of the lens array 170. In an embodiment, a plurality of additional individually controllable devices 102 may be provided on opposite sides of the polygon (i.e., on the right side) to cause radiation to illuminate surface 606 of polygon 600.

在一實施例中,可使用振動光學器件以代替多邊形600。振動光學器件具有相對於透鏡陣列170之特定固定角度,且可在Y方向上來回地平移以導致光束在Y方向上橫越透鏡陣列170而來回地進行掃描。在一實施例中,可使用圍繞軸線602經由弧而來回地旋轉之光學器件以代替多邊形600。藉由經由弧而來回地旋轉光學器件,導致光束在Y方向上橫越透鏡陣列170而來回地進行掃描。在一實施例中,多邊形600、振動光學器件及/或旋轉光學器件具有一或多個鏡面表面。在一實施例中,多邊形600、振動光學器件及/或旋轉光學器件包含稜鏡。在一實施例中,可使用聲光調變器以代替多邊形600。可使用聲光調變器以使光束橫越透鏡陣列170進行掃描。在一實施例中,透鏡陣列170可置放於複數個個別可控制器件102與多邊形600、振動光學器件、旋轉光學器件及/或聲光調變器之間的輻射路徑中。In an embodiment, vibrating optics may be used in place of polygon 600. The vibrating optics have a particular fixed angle relative to the lens array 170 and can be translated back and forth in the Y direction to cause the beam to scan back and forth across the lens array 170 in the Y direction. In an embodiment, optics that rotate back and forth about the axis 602 via the arc may be used instead of the polygon 600. Rotating the optics back and forth through the arc causes the beam to scan back and forth across the lens array 170 in the Y direction. In an embodiment, the polygon 600, the vibrating optics, and/or the rotating optics have one or more mirrored surfaces. In an embodiment, the polygon 600, the vibrating optics, and/or the rotating optics comprise a crucible. In an embodiment, an acousto-optic modulator can be used in place of the polygon 600. An acousto-optic modulator can be used to cause the beam to scan across the lens array 170. In one embodiment, lens array 170 can be placed in a radiation path between a plurality of individual controllable devices 102 and polygons 600, vibrating optics, rotating optics, and/or acousto-optic modulators.

因此,通常,曝光區域(例如,基板)之寬度相較於被劃分成曝光區域之寬度的該等輻射輸出之寬度可被覆蓋有更少輻射輸出。在一實施例中,此情形可包含相對於曝光區域移動輻射光束源,或相對於曝光區域移動輻射光束。圖18描繪具有可移動個別可控制器件102的根據本發明之一實施例之微影裝置的示意性橫截面側視圖。如同圖5所示之微影裝置100,微影裝置100包含:基板台106,基板台106係用以固持基板;及定位元件116,定位元件116係用以在高達6個自由度中移動基板台106。Thus, in general, the width of the exposed area (e.g., substrate) can be covered with less radiation output than the width of the radiation output divided into the width of the exposed area. In an embodiment, this may include moving the source of the radiation beam relative to the exposure area or moving the beam of radiation relative to the exposure area. FIG. 18 depicts a schematic cross-sectional side view of a lithography apparatus in accordance with an embodiment of the present invention having a movable individually controllable device 102. Like the lithography apparatus 100 shown in FIG. 5, the lithography apparatus 100 includes a substrate stage 106 for holding a substrate, and a positioning component 116 for moving the substrate in up to 6 degrees of freedom. Stage 106.

微影裝置100進一步包含配置於框架160上之複數個個別可控制器件102。在此實施例中,個別可控制器件102中之每一者為一輻射發射二極體,例如,雷射二極體(例如,藍紫色雷射二極體)。個別可控制器件102經配置成沿著Y方向延伸之個別可控制器件102陣列200。雖然展示一個陣列200,但微影裝置可具有如(例如)圖5所示之複數個陣列200。The lithography apparatus 100 further includes a plurality of individual controllable devices 102 disposed on the frame 160. In this embodiment, each of the individually controllable devices 102 is a radiation emitting diode, such as a laser diode (eg, a blue-violet laser diode). Individual controllable devices 102 are configured to array 200 of individually controllable devices 102 that extend in the Y direction. Although an array 200 is shown, the lithography apparatus can have a plurality of arrays 200 as shown, for example, in FIG.

在此實施例中,陣列200為可旋轉板,該可旋轉板具有圍繞該板所配置之複數個空間分離個別可控制器件102。在使用中,該板(例如)在藉由圖5中之箭頭所示之方向上圍繞其自有軸線206旋轉。使用馬達216圍繞軸線206旋轉陣列200之板。另外,可藉由馬達216在Z方向上移動陣列200之板,使得可使個別可控制器件102相對於基板台106位移。在此實施例中,陣列200可具有一或多個散熱片230以增加用於熱耗散之表面區域。散熱片230可(例如)處於陣列200之頂部表面上。視情況,可提供一或多個另外散熱片232以與散熱片230合作以促進熱耗散。舉例而言,散熱片232能夠自散熱片230吸收熱,且可類似於如圖7(F)所示且關於圖7(F)所描述而包含流體(例如,液體)傳導通道及關聯熱交換器/泵。在此實施例中,透鏡242可位於每一個別可控制器件102前方,且係隨著個別可控制器件102而可移動(例如,圍繞軸線A可旋轉)。在圖18中,兩個透鏡242經展示且附接至陣列200。另外,透鏡242可相對於個別可控制器件102可位移(例如,在Z方向上)。In this embodiment, array 200 is a rotatable plate having a plurality of spatially separated individual controllable devices 102 disposed about the plate. In use, the plate rotates about its own axis 206, for example, in the direction indicated by the arrow in FIG. The plate of array 200 is rotated about axis 206 using motor 216. Additionally, the plates of array 200 can be moved in the Z direction by motor 216 such that individual controllable devices 102 can be displaced relative to substrate table 106. In this embodiment, array 200 can have one or more fins 230 to increase the surface area for heat dissipation. Heat sink 230 can be, for example, on the top surface of array 200. Optionally, one or more additional heat sinks 232 may be provided to cooperate with the heat sink 230 to promote heat dissipation. For example, the heat sink 232 can absorb heat from the heat sink 230 and can include a fluid (eg, liquid) conductive channel and associated heat exchange similar to that shown in FIG. 7(F) and described with respect to FIG. 7(F). / pump. In this embodiment, lens 242 can be located in front of each individual controllable device 102 and can be movable (eg, rotatable about axis A) with individual controllable devices 102. In FIG. 18, two lenses 242 are shown and attached to array 200. Additionally, lens 242 can be displaceable relative to individual controllable device 102 (eg, in the Z direction).

在此實施例中,具有孔隙之孔隙結構248可在透鏡242與關聯個別可控制器件102之間位於透鏡242上方。孔隙結構248可限制透鏡242、關聯個別可控制器件102及/或鄰近透鏡242/個別可控制器件102之繞射效應。In this embodiment, the apertured structure 248 having apertures can be positioned over the lens 242 between the lens 242 and the associated individually controllable device 102. The aperture structure 248 can limit the diffraction effects of the lens 242, associated individual controllable devices 102, and/or adjacent lenses 242 / individual controllable devices 102.

在此實施例中,感測器254可具備個別可定址器件102(或具備陣列200之複數個個別可定址器件102)。在此實施例中,感測器254經配置以偵測聚焦。聚焦偵測光束256經重新引導(例如,反射)離開基板表面、傳遞通過透鏡242且藉由(例如)半鍍銀鏡面258引導朝向偵測器262。在一實施例中,聚焦偵測光束256可為碰巧自基板重新引導的用於曝光之輻射。在一實施例中,聚焦偵測光束256可為引導於基板處且在藉由基板重新引導後隨即變為光束256之專用光束。上文關於圖7(O)描述實例聚焦感測器。鏡面258及偵測器262可安裝至陣列200。In this embodiment, the sensor 254 can be provided with an individual addressable device 102 (or a plurality of individual addressable devices 102 having an array 200). In this embodiment, sensor 254 is configured to detect focus. The focus detection beam 256 is redirected (eg, reflected) away from the substrate surface, passed through the lens 242, and directed toward the detector 262 by, for example, a half-silvered mirror 258. In one embodiment, the focus detection beam 256 can be radiation for exposure that happens to be redirected from the substrate. In one embodiment, the focus detection beam 256 can be a dedicated beam that is directed at the substrate and then becomes a beam 256 after being redirected by the substrate. An example focus sensor is described above with respect to Figure 7(O). Mirror 258 and detector 262 can be mounted to array 200.

在此實施例中,可藉由有線或無線通信將控制信號供應至個別可控制器件102及/或一或多個其他元件(例如,感測器)。另外,可將來自個別可控制器件102及/或來自一或多個其他元件(例如,感測器)之信號傳達至控制器。在圖18中,可沿著旋轉軸線206提供線404。在一實施例中,線404可為光學線。在該情況下,信號可為光學信號,其中(例如)可在不同波長下攜載不同控制信號。以與控制信號類似之方式,可藉由有線或無線手段將功率供應至個別可控制器件102或一或多個其他元件(例如,感測器)。舉例而言,在一有線實施例中,可藉由一或多條線404供應功率,而無論線404是與攜載該等信號之線相同或是不同。在一無線實施例中,可藉由如700處所示之RF耦合傳送功率。In this embodiment, control signals may be supplied to individual controllable devices 102 and/or one or more other components (eg, sensors) by wired or wireless communication. Additionally, signals from individual controllable devices 102 and/or from one or more other components (eg, sensors) can be communicated to the controller. In FIG. 18, a line 404 can be provided along the axis of rotation 206. In an embodiment, line 404 can be an optical line. In this case, the signal can be an optical signal in which, for example, different control signals can be carried at different wavelengths. Power may be supplied to the individually controllable device 102 or one or more other components (e.g., sensors) by wired or wireless means in a manner similar to control signals. For example, in a wired embodiment, power may be supplied by one or more lines 404, regardless of whether line 404 is the same or different than the line carrying the signals. In a wireless embodiment, power can be transmitted by RF coupling as shown at 700.

在此實施例中,微影裝置可包含感測器500以量測已或待藉由一或多個個別可控制器件102透射朝向基板之輻射的特性。此感測器可為光點感測器或透射影像感測器。感測器可用以(例如)判定來自個別可控制器件102之輻射的強度、來自個別可控制器件102之輻射的均一性、來自個別可控制器件102之輻射之光點的橫截面大小或面積,及/或來自個別可控制器件102之輻射之光點的部位(在X-Y平面中)。在此實施例中,感測器500處於框架160上,且可鄰近於基板台106或係經由基板台106可近接。In this embodiment, the lithography apparatus can include a sensor 500 to measure characteristics of radiation that has been or is to be transmitted by the one or more individually controllable devices 102 toward the substrate. The sensor can be a spot sensor or a transmission image sensor. The sensor can be used, for example, to determine the intensity of radiation from the individual controllable devices 102, the uniformity of radiation from the individual controllable devices 102, the cross-sectional size or area of the spots of radiation from the individual controllable devices 102, And/or from the spot of the radiation of the individual controllable device 102 (in the XY plane). In this embodiment, the sensor 500 is on the frame 160 and may be adjacent to or adjacent to the substrate stage 106 via the substrate stage 106.

在一實施例中,在曝光基板期間,個別可控制器件102在X-Y平面中實質上靜止,而非使個別可控制器件102在X-Y平面中可移動。此情形並非意味著可控制器件102可能不在X-Y平面中可移動。舉例而言,該等可控制器件可在X-Y平面中可移動以校正該等可控制器件之位置。使可控制器件102實質上靜止之可能優點為更容易將功率及/或資料轉移至可控制器件102。另外或替代可能優點為局域地調整聚焦以補償基板之高度差的改良型能力,高度差大於系統之聚焦深度且係在比移動可控制器件之間距高的空間頻率上。In one embodiment, during exposure of the substrate, the individually controllable device 102 is substantially stationary in the X-Y plane rather than moving the individually controllable device 102 in the X-Y plane. This situation does not mean that the controllable device 102 may not be movable in the X-Y plane. For example, the controllable devices can be moved in the X-Y plane to correct the position of the controllable devices. A possible advantage of making the controllable device 102 substantially stationary is that it is easier to transfer power and/or data to the controllable device 102. Additionally or alternatively, there may be an improved ability to locally adjust the focus to compensate for the height difference of the substrate, the height difference being greater than the depth of focus of the system and being at a higher spatial frequency than the distance between the mobile controllable devices.

在此實施例中,雖然可控制器件102實質上靜止,但存在相對於個別可控制器件102移動之至少一光學器件。在下文中描述在X-Y平面中實質上靜止之個別可控制器件102及相對於個別可控制器件102可移動之光學器件的各種配置。In this embodiment, although the controllable device 102 is substantially stationary, there is at least one optical device that moves relative to the individual controllable device 102. Various configurations of individually controllable devices 102 that are substantially stationary in the X-Y plane and optics that are movable relative to the individual controllable devices 102 are described below.

在下文之描述中,術語「透鏡」在內容背景允許時應通常被理解為涵蓋各種類型之光學組件中之任一者或其組合,包括折射、繞射、反射、磁性、電磁及靜電光學組件,諸如提供與參考透鏡之功能相同的功能之任何折射、反射及/或繞射光學器件。舉例而言,可以具有光學功率之習知折射透鏡的形式、以具有光學功率之史瓦茲西耳德(Schwarzschild)反射系統的形式及/或以具有光學功率之波帶片(zone plate)的形式體現成像透鏡。此外,若所得效應係在基板上產生收斂光束,則成像透鏡可包含非成像光學器件。另外,在下文之描述中,參考複數個個別可控制器件102,諸如鏡面陣列調變器之鏡面或複數個輻射源。然而,該描述應更通常被理解為涉及經配置以輸出複數個光束之調變器。舉例而言,調變器可為聲光調變器以自藉由輻射源提供之光束輸出複數個光束。In the following description, the term "lens" shall be generally understood to encompass any or a combination of various types of optical components, including refractive, diffractive, reflective, magnetic, electromagnetic, and electrostatic optical components, as the context of the context permits. Any refractive, reflective, and/or diffractive optic such as that provides the same function as the reference lens. For example, it may be in the form of a conventional refractive lens with optical power, in the form of a Schwarzschild reflection system with optical power and/or in a zone plate with optical power. The form reflects the imaging lens. Furthermore, if the resulting effect produces a convergent beam on the substrate, the imaging lens can comprise non-imaging optics. Additionally, in the following description, reference is made to a plurality of individual controllable devices 102, such as a mirror or a plurality of radiation sources of a mirror array modulator. However, the description should be more generally understood to refer to a modulator configured to output a plurality of beams. For example, the modulator can be an acousto-optic modulator that outputs a plurality of beams from a beam provided by a source of radiation.

圖19描繪微影裝置之部分的示意性俯視圖佈局,微影裝置具有根據本發明之一實施例的在X-Y平面中實質上靜止之複數個個別可控制器件102(例如,雷射二極體)及相對於個別可控制器件102可移動之光學器件242。在此實施例中,複數個個別可控制器件102附接至框架且在X-Y平面中實質上靜止,複數個成像透鏡242相對於該等個別可控制器件102實質上在X-Y平面中移動(如在圖19中藉由轉輪801之旋轉之指示所示),且基板在方向803上移動。在一實施例中,成像透鏡242藉由圍繞軸線旋轉而相對於個別可控制器件102移動。在一實施例中,成像透鏡242安裝於圍繞軸線旋轉(例如,在圖19所示之方向上)且以圓形方式所配置(例如,如圖19部分地所示)之結構上。19 depicts a schematic top view layout of a portion of a lithography apparatus having a plurality of individually controllable devices 102 (eg, a laser diode) that are substantially stationary in an XY plane in accordance with an embodiment of the present invention. And optics 242 movable relative to the individual controllable device 102. In this embodiment, a plurality of individual controllable devices 102 are attached to the frame and are substantially stationary in the XY plane, and the plurality of imaging lenses 242 move substantially in the XY plane relative to the individually controllable devices 102 (eg, in In Fig. 19, as indicated by the indication of the rotation of the wheel 801, the substrate is moved in the direction 803. In an embodiment, imaging lens 242 is moved relative to individual controllable device 102 by rotation about an axis. In an embodiment, imaging lens 242 is mounted on a structure that is rotated about an axis (eg, in the direction shown in FIG. 19) and configured in a circular manner (eg, as shown partially in FIG. 19).

個別可控制器件102中之每一者將經準直光束提供至移動成像透鏡242。在一實施例中,個別可控制器件102係與用以提供經準直光束之一或多個準直透鏡相關聯。在一實施例中,準直透鏡在X-Y平面中實質上靜止,且附接至個別可控制器件102被附接至之框架。在此實施例中,經準直光束之橫截面寬度小於成像透鏡242之橫截面寬度。因此,一旦經準直光束完全地落入成像透鏡242之光學透射部分內,隨即可開啟個別可控制器件102(例如,二極體雷射)。當光束落入成像透鏡242之光學透射部分外時,則關閉個別可控制器件102(例如,二極體雷射)。因此,在一實施例中,來自個別可控制器件102之光束在任一時間傳遞通過單一成像透鏡242。成像透鏡242相對於來自個別可控制器件102之光束的所得橫穿自開啟之每一個別可控制器件102在基板上得到關聯的經成像線800。在圖19中,相對於圖19中之三個實例個別可控制器件102中之每一者而展示三個經成像線800,但將顯而易見,圖19中之其他個別可控制器件102可在基板上產生關聯的經成像線800。Each of the individually controllable devices 102 provides a collimated beam of light to the moving imaging lens 242. In one embodiment, the individual controllable device 102 is associated with one or more collimating lenses to provide a collimated beam of light. In an embodiment, the collimating lens is substantially stationary in the X-Y plane and attached to the frame to which the individual controllable device 102 is attached. In this embodiment, the cross-sectional width of the collimated beam is less than the cross-sectional width of the imaging lens 242. Thus, once the collimated beam falls completely within the optically transmissive portion of imaging lens 242, individual controllable device 102 (e.g., a diode laser) can be turned on. When the beam falls outside of the optically transmissive portion of imaging lens 242, individual controllable device 102 (e.g., a diode laser) is turned off. Thus, in one embodiment, the light beams from the individual controllable devices 102 are passed through a single imaging lens 242 at any one time. The imaging lens 242 is associated with the imaged line 800 on the substrate relative to each of the individual controllable devices 102 that traverse the self-opening relative to the light beams from the individual controllable devices 102. In FIG. 19, three warp-image lines 800 are shown relative to each of the three example individually controllable devices 102 of FIG. 19, but it will be apparent that other individual controllable devices 102 of FIG. 19 may be on the substrate. An associated imaging line 800 is created thereon.

在圖19佈局中,成像透鏡242間距可為1.5毫米,且來自個別可控制器件102中之每一者之光束的橫截面寬度(例如,直徑)稍微小於0.5毫米。在此組態的情況下,有可能用每一個別可控制器件102書寫長度為約1毫米之線。因此,在0.5毫米之光束直徑及1.5毫米之成像透鏡242直徑的此配置中,作用時間循環可高達67%。在個別可控制器件102相對於成像透鏡242之適當定位的情況下,橫越基板之寬度之全覆蓋係可能的。因此,例如,若僅使用標準5.6毫米直徑雷射二極體,則可使用雷射二極體之若干同心環(如圖19所示)以獲取橫越基板之寬度之全覆蓋。因此,在此實施例中,也許有可能使用比僅僅使用固定個別可控制器件102陣列之情況下或或許比本文中所描述之移動個別可控制器件102之情況下更少的個別可控制器件102(例如,雷射二極體)。In the FIG. 19 layout, imaging lens 242 may have a pitch of 1.5 millimeters, and the beam width (eg, diameter) from each of individual controllable devices 102 is slightly less than 0.5 millimeters. In the case of this configuration, it is possible to write a line having a length of about 1 mm with each individual controllable device 102. Thus, in this configuration of a beam diameter of 0.5 mm and a diameter of the imaging lens 242 of 1.5 mm, the duty cycle can be as high as 67%. In the case of proper positioning of the individual controllable device 102 relative to the imaging lens 242, full coverage across the width of the substrate is possible. Thus, for example, if only a standard 5.6 mm diameter laser diode is used, several concentric rings of the laser diode (as shown in Figure 19) can be used to obtain full coverage across the width of the substrate. Thus, in this embodiment, it may be possible to use fewer individually controllable devices 102 than if only the array of fixed individual controllable devices 102 were used or perhaps in the case of moving individual controllable devices 102 as described herein. (for example, a laser diode).

在此實施例中,成像透鏡242中之每一者應相同,此係因為每一個別可控制器件102將藉由所有移動成像透鏡242成像。在此實施例中,所有成像透鏡242均無需成像場,但需要更高NA透鏡,例如,大於0.3、大於0.18或大於0.15。在此單器件光學器件的情況下,繞射有限成像係可能的。基板上之光束的聚焦固定至成像透鏡242之光軸,而獨立於經準直光束進入該透鏡之處(見(例如)圖20,其描繪圖19之微影裝置之部分的示意性三維圖式)。此配置之缺點在於:自成像透鏡242朝向基板之光束並非遠心的,且因此,可能發生聚焦誤差,從而可能導致疊對誤差。In this embodiment, each of the imaging lenses 242 should be identical, as each individual controllable device 102 will be imaged by all of the moving imaging lenses 242. In this embodiment, all imaging lenses 242 do not require an imaging field, but require a higher NA lens, for example, greater than 0.3, greater than 0.18, or greater than 0.15. In the case of this single device optics, a diffraction limited imaging system is possible. The focus of the beam on the substrate is fixed to the optical axis of the imaging lens 242, independent of the collimated beam entering the lens (see, for example, Figure 20, which depicts a schematic three-dimensional view of a portion of the lithography apparatus of Figure 19). formula). A disadvantage of this configuration is that the beam of light from the imaging lens 242 toward the substrate is not telecentric, and therefore, focus errors may occur, which may result in stacking errors.

在此實施例中,藉由使用不在X-Y平面中(例如,在個別可控制器件102處)移動之器件來調整聚焦將很可能導致漸暈(vignetting)。因此,應在移動成像透鏡242中發生所要聚焦調整。因此,此情形可能需要比移動成像透鏡242更高之頻率的致動器。In this embodiment, adjusting the focus by using a device that is not moving in the X-Y plane (e.g., at the individual controllable device 102) will likely result in vignetting. Therefore, the desired focus adjustment should occur in the moving imaging lens 242. Therefore, this situation may require an actuator of a higher frequency than moving the imaging lens 242.

圖21描繪微影裝置之部分的示意性側視圖佈局,微影裝置具有根據本發明之一實施例的在X-Y平面中實質上靜止之個別可控制器件及相對於個別可控制器件可移動之光學器件,且展示成像透鏡242集合相對於個別可控制器件之三個不同旋轉位置。在此實施例中,圖19及圖20之微影裝置係藉由使成像透鏡242包含兩個透鏡802、804以自個別可控制器件102接收經準直光束而擴充。如同在圖19中,成像透鏡242在X-Y平面中相對於個別可控制器件102移動(例如,圍繞一軸線旋轉,在該軸線中,至少部分地以圓形方式配置成像透鏡242)。在此實施例中,來自個別可控制器件102之光束在到達成像透鏡242之前係藉由透鏡806準直,但在一實施例中,無需提供此透鏡。透鏡806在X-Y平面中實質上靜止。基板在X方向上移動。兩個透鏡802、804配置於自個別可控制器件102至基板之經準直光束的光徑中,以使朝向基板之光束係遠心的。在個別可控制器件102與透鏡804之間,透鏡802包含具有實質上相等焦距之兩個透鏡802A、802B。來自個別可控制器件102之經準直光束聚焦於兩個透鏡802A、802B之間,使得透鏡802B將光束準直朝向成像透鏡804。成像透鏡804將光束成像至基板上。21 depicts a schematic side view layout of a portion of a lithography apparatus having individual controllable devices that are substantially stationary in an XY plane and optically movable relative to individual controllable devices, in accordance with an embodiment of the present invention. The device, and showing the set of imaging lenses 242, is positioned at three different rotational positions relative to the individual controllable devices. In this embodiment, the lithography apparatus of FIGS. 19 and 20 is augmented by including imaging lens 242 with two lenses 802, 804 to receive a collimated beam from individual controllable devices 102. As in FIG. 19, imaging lens 242 is moved relative to individual controllable device 102 in the X-Y plane (eg, rotated about an axis in which imaging lens 242 is at least partially disposed in a circular manner). In this embodiment, the light beams from the individual controllable devices 102 are collimated by the lens 806 before reaching the imaging lens 242, but in one embodiment, there is no need to provide such a lens. Lens 806 is substantially stationary in the X-Y plane. The substrate moves in the X direction. The two lenses 802, 804 are disposed in the optical path of the collimated beam from the individual controllable device 102 to the substrate such that the beam toward the substrate is telecentric. Between individual controllable device 102 and lens 804, lens 802 includes two lenses 802A, 802B having substantially equal focal lengths. The collimated beam from the individual controllable device 102 is focused between the two lenses 802A, 802B such that the lens 802B collimates the beam toward the imaging lens 804. Imaging lens 804 images the beam onto the substrate.

在此實施例中,透鏡802相對於個別可控制器件102在X-Y平面中以特定速率移動(例如,特定的每分鐘轉數(RPM))。因此,在此實施例中,若移動成像透鏡804正以與透鏡802之速率相同的速率移動,則來自透鏡802之射出經準直光束將在X-Y平面中具有兩倍於移動成像透鏡804之速率的速率。因此,在此實施例中,成像透鏡804相對於個別可控制器件102以不同於透鏡802之速率的速率移動。詳言之,成像透鏡804在X-Y平面中以兩倍於透鏡802之速率(例如,兩倍於透鏡802之RPM)的速率移動,使得光束將遠心地聚焦於基板上。圖21中之三個實例位置中示意性地展示自透鏡802至成像透鏡804之射出經準直光束的此對準。另外,因為相較於圖19之實例將以兩倍的速率進行在基板上之實際書寫,所以應加倍個別可控制器件102之功率。In this embodiment, lens 802 is moved at a particular rate (eg, a specific number of revolutions per minute (RPM)) in the X-Y plane relative to individual controllable device 102. Thus, in this embodiment, if the moving imaging lens 804 is moving at the same rate as the lens 802, the exit collimated beam from the lens 802 will have twice the rate of moving the imaging lens 804 in the XY plane. s speed. Thus, in this embodiment, imaging lens 804 moves at a rate different from that of lens 802 relative to individual controllable device 102. In particular, imaging lens 804 moves at a rate that is twice the rate of lens 802 (e.g., twice the RPM of lens 802) in the X-Y plane such that the beam will be telecentrically focused on the substrate. This alignment of the exit collimated beam from lens 802 to imaging lens 804 is schematically illustrated in the three example locations in FIG. In addition, because the actual writing on the substrate will be performed at twice the rate compared to the example of Figure 19, the power of the individually controllable device 102 should be doubled.

在此實施例中,藉由使用不在X-Y平面中(例如,在個別可控制器件102處)移動之器件來調整聚焦將很可能導致遠心性損失且導致漸暈。因此,應在移動成像透鏡242中發生所要聚焦調整。另外,在此實施例中,所有成像透鏡242均無需成像場。在此單器件光學器件的情況下,繞射有限成像係可能的。約65%之作用時間循環係可能的。在一實施例中,透鏡806、802A、802B及804可包含2個非球面透鏡及2個球面透鏡。In this embodiment, adjusting the focus by using a device that is not moving in the X-Y plane (e.g., at the individual controllable device 102) will likely result in loss of telecentricity and result in vignetting. Therefore, the desired focus adjustment should occur in the moving imaging lens 242. Additionally, in this embodiment, all imaging lenses 242 do not require an imaging field. In the case of this single device optics, a diffraction limited imaging system is possible. Approximately 65% of the action time cycle is possible. In one embodiment, lenses 806, 802A, 802B, and 804 can include two aspherical lenses and two spherical lenses.

在一實施例中,可使用約380個個別可控制器件102(例如,標準雷射二極體)。在一實施例中,可使用約1400個成像透鏡242集合。在使用標準雷射二極體之實施例中,可使用約4200個成像透鏡242集合,該等集合可以6個同心環配置於一轉輪上。在一實施例中,成像透鏡之旋轉轉輪將以約12,000 RPM旋轉。In an embodiment, about 380 individual controllable devices 102 (eg, standard laser diodes) can be used. In an embodiment, a collection of approximately 1400 imaging lenses 242 can be used. In an embodiment using a standard laser diode, a collection of approximately 4,200 imaging lenses 242 can be used, which can be arranged on a single rotor with six concentric rings. In an embodiment, the rotating wheel of the imaging lens will rotate at approximately 12,000 RPM.

圖22描繪微影裝置之部分的示意性側視圖佈局,微影裝置具有根據本發明之一實施例的在X-Y平面中實質上靜止之個別可控制器件及相對於個別可控制器件可移動之光學器件,且展示成像透鏡242集合相對於個別可控制器件之三個不同旋轉位置。在此實施例中,為了避免如關於圖21所描述之以不同速率移動透鏡,可如圖22所示而使用用於移動成像透鏡242之所謂的4f遠心縮進(telecentric in)/遠心伸出(telecentric out)成像系統。移動成像透鏡242包含在X-Y平面中以實質上相同速率移動(例如,圍繞一軸線旋轉,在該軸線中,至少部分地以圓形方式配置成像透鏡242)之兩個成像透鏡808、810,且接收遠心光束以作為輸入,且將遠心成像光束輸出至基板。在放大率為1之此配置中,基板上之影像比移動成像透鏡242快兩倍而移動。基板在X方向上移動。在此配置中,光學器件將很可能需要以相對較大NA成像場,例如,大於0.3、大於0.18或大於0.15。在兩個單器件光學器件的情況下,此配置也許不係可能的。可能需要具有極準確之對準容許度之六個或六個以上器件以獲取繞射有限影像。約65%之作用時間循環係可能的。在此實施例中,亦相對易於用不沿著或結合可移動成像透鏡242移動之器件局域地聚焦。22 depicts a schematic side view layout of a portion of a lithography apparatus having individual controllable devices that are substantially stationary in the XY plane and optically movable relative to the individual controllable devices, in accordance with an embodiment of the present invention. The device, and showing the set of imaging lenses 242, is positioned at three different rotational positions relative to the individual controllable devices. In this embodiment, to avoid moving the lens at different rates as described with respect to Figure 21, the so-called 4f telecentric in/telecentric extension for moving the imaging lens 242 can be used as shown in FIG. (telecentric out) imaging system. The moving imaging lens 242 includes two imaging lenses 808, 810 that move in substantially the same rate in the XY plane (eg, rotate about an axis in which the imaging lens 242 is at least partially disposed in a circular manner), and A telecentric beam is received as an input and a telecentric imaging beam is output to the substrate. In this configuration with a magnification of one, the image on the substrate moves twice as fast as the moving imaging lens 242. The substrate moves in the X direction. In this configuration, the optics will most likely need to image the field with a relatively large NA, for example, greater than 0.3, greater than 0.18, or greater than 0.15. In the case of two single device optics, this configuration may not be possible. Six or more devices with extremely accurate alignment tolerances may be required to obtain a diffraction limited image. Approximately 65% of the action time cycle is possible. In this embodiment, it is also relatively easy to focus locally with a device that does not move along or in conjunction with the movable imaging lens 242.

圖23描繪微影裝置之部分的示意性側視圖佈局,微影裝置具有根據本發明之一實施例的在X-Y平面中實質上靜止之個別可控制器件及相對於個別可控制器件可移動之光學器件,且展示成像透鏡242集合相對於個別可控制器件之五個不同旋轉位置。在此實施例中,為了避免如關於圖21所描述之以不同速率移動透鏡且為了使光學器件不會如關於圖22所敍述之成像場,將在X-Y平面中實質上靜止之透鏡的組合與移動成像透鏡242組合。參看圖23,提供在X-Y平面中實質上靜止之個別可控制器件102。提供在X-Y平面中實質上靜止之選用準直透鏡806,以準直來自個別可控制器件102之光束,且將經準直光束(具有(例如)0.5毫米之橫截面寬度(例如,直徑))提供至透鏡812。透鏡812在X-Y平面中亦實質上靜止,且將經準直光束聚焦至移動成像透鏡242之場透鏡814(具有(例如)1.5毫米之橫截面寬度(例如,直徑))。透鏡814具有相對較大焦距(例如,f=20毫米)。23 depicts a schematic side view layout of a portion of a lithography apparatus having individual controllable devices that are substantially stationary in an XY plane and optically movable relative to individual controllable devices, in accordance with an embodiment of the present invention. The device, and showing the set of imaging lenses 242 at five different rotational positions relative to the individual controllable devices. In this embodiment, in order to avoid moving the lens at different rates as described with respect to Figure 21 and in order to prevent the optics from being imaged as described with respect to Figure 22, the combination of lenses that are substantially stationary in the XY plane is The moving imaging lens 242 is combined. Referring to Figure 23, an individual controllable device 102 that is substantially stationary in the X-Y plane is provided. An optional collimating lens 806 is provided that is substantially stationary in the XY plane to collimate the beam from the individual controllable device 102 and to collimate the beam (having a cross-sectional width (eg, diameter) of, for example, 0.5 mm) Provided to lens 812. Lens 812 is also substantially stationary in the X-Y plane and focuses the collimated beam to field lens 814 of moving imaging lens 242 (having a cross-sectional width (e.g., diameter) of, for example, 1.5 millimeters). Lens 814 has a relatively large focal length (eg, f = 20 mm).

可移動成像透鏡242之場透鏡814相對於個別可控制器件102移動(例如,圍繞一軸線旋轉,在該軸線中,至少部分地以圓形方式配置成像透鏡242)。場透鏡814將光束引導朝向可移動成像透鏡242之成像透鏡818。如同場透鏡814,成像透鏡818相對於個別可控制器件102移動(例如,圍繞一軸線旋轉,在該軸線中,至少部分地以圓形方式配置成像透鏡242)。在此實施例中,場透鏡814以與成像透鏡818之速率實質上相同的速率移動。一對場透鏡814與成像透鏡818相對於彼此對準。基板在X方向上移動。The field lens 814 of the movable imaging lens 242 is moved relative to the individual controllable device 102 (eg, rotated about an axis in which the imaging lens 242 is at least partially disposed in a circular manner). Field lens 814 directs the beam toward imaging lens 818 of movable imaging lens 242. Like field lens 814, imaging lens 818 moves relative to individual controllable device 102 (eg, about an axis in which imaging lens 242 is at least partially disposed in a circular manner). In this embodiment, field lens 814 is moved at substantially the same rate as imaging lens 818. A pair of field lenses 814 are aligned with imaging lens 818 relative to one another. The substrate moves in the X direction.

透鏡816處於場透鏡814與成像透鏡818之間。透鏡816在X-Y平面中實質上靜止,且將來自場透鏡814之光束準直至成像透鏡818。透鏡816具有相對較大焦距(例如,f=20毫米)。在此實施例中,場透鏡814之光軸應與對應成像透鏡816之光軸重合。場透鏡814經設計成使得將摺疊光束,使得藉由透鏡816準直的光束之主光線與成像透鏡818之光軸重合。以此方式,朝向基板之光束係遠心的。透鏡812及816可歸因於大f數而為簡單球面透鏡。場透鏡814應不影響影像品質且亦可為球面器件。在此實施例中,準直透鏡806及成像透鏡818為無需成像場之透鏡。在此單器件光學器件的情況下,繞射有限成像係可能的。約65%之作用時間循環係可能的。Lens 816 is between field lens 814 and imaging lens 818. Lens 816 is substantially stationary in the X-Y plane and the beam from field lens 814 is aligned to imaging lens 818. Lens 816 has a relatively large focal length (eg, f = 20 mm). In this embodiment, the optical axis of the field lens 814 should coincide with the optical axis of the corresponding imaging lens 816. The field lens 814 is designed such that the beam is folded such that the chief ray of the beam collimated by the lens 816 coincides with the optical axis of the imaging lens 818. In this way, the beam towards the substrate is telecentric. Lenses 812 and 816 can be simple spherical lenses due to the large f-number. Field lens 814 should not affect image quality and can also be a spherical device. In this embodiment, collimating lens 806 and imaging lens 818 are lenses that do not require an imaging field. In the case of this single device optics, a diffraction limited imaging system is possible. Approximately 65% of the action time cycle is possible.

在可移動成像透鏡242係可旋轉之實施例中,提供透鏡及個別可控制器件102之至少兩個同心環以獲得橫越基板之寬度之全覆蓋。在一實施例中,此等環上之個別可控制器件102係以1.5毫米之間距而配置。若使用具有5.6毫米之直徑的標準雷射二極體,則對於全覆蓋可能需要至少6個同心環。圖24及圖25描繪根據此等配置之個別可控制器件102之同心環的配置。在一實施例中,此配置將導致具有在X-Y平面中實質上靜止之對應透鏡的大約380個個別可控制器件102。移動成像透鏡242將具有700×6個環=4200個透鏡814、818集合。在此組態的情況下,有可能用每一個別可控制器件102書寫長度為約1毫米之線。在一實施例中,可使用約1400個成像透鏡242集合。在一實施例中,透鏡812、814、816及818可包含4個非球面透鏡。In embodiments where the movable imaging lens 242 is rotatable, at least two concentric rings of the lens and the individually controllable device 102 are provided to achieve full coverage across the width of the substrate. In one embodiment, the individual controllable devices 102 on the rings are configured at a distance of 1.5 millimeters. If a standard laser diode with a diameter of 5.6 mm is used, at least 6 concentric rings may be required for full coverage. 24 and 25 depict the configuration of concentric rings of individually controllable devices 102 in accordance with such configurations. In an embodiment, this configuration will result in approximately 380 individually controllable devices 102 having corresponding lenses that are substantially stationary in the X-Y plane. The moving imaging lens 242 will have a collection of 700 x 6 rings = 4200 lenses 814, 818. In the case of this configuration, it is possible to write a line having a length of about 1 mm with each individual controllable device 102. In an embodiment, a collection of approximately 1400 imaging lenses 242 can be used. In an embodiment, lenses 812, 814, 816, and 818 can include four aspherical lenses.

在此實施例中,藉由使用不在X-Y平面中(例如,在個別可控制器件102處)移動之器件來調整聚焦將很可能導致遠心性損失且導致漸暈。因此,應在移動成像透鏡242中發生所要聚焦調整。因此,此情形可能需要比移動成像透鏡242更高之頻率的致動器。圖26描繪微影裝置之部分的示意性側視圖佈局,微影裝置具有根據本發明之一實施例的在X-Y平面中實質上靜止之個別可控制器件及相對於個別可控制器件可移動之光學器件。在此實施例中,使用光學反旋轉器(derotator)以將在X-Y平面中實質上靜止之個別可控制器件102耦合至移動成像透鏡242。In this embodiment, adjusting the focus by using a device that is not moving in the X-Y plane (e.g., at the individual controllable device 102) will likely result in loss of telecentricity and result in vignetting. Therefore, the desired focus adjustment should occur in the moving imaging lens 242. Therefore, this situation may require an actuator of a higher frequency than moving the imaging lens 242. 26 depicts a schematic side view layout of a portion of a lithography apparatus having individual controllable devices that are substantially stationary in an XY plane and optically movable relative to individual controllable devices, in accordance with an embodiment of the present invention. Device. In this embodiment, an optical derotator is used to couple the individually controllable device 102 that is substantially stationary in the X-Y plane to the moving imaging lens 242.

在此實施例中,以一環配置個別可控制器件102連同選用準直透鏡。兩個抛物面鏡面820、822將來自個別可控制器件102之經準直光束之環減少至用於反旋轉器824之可接受直徑。在圖26中,將別漢稜鏡(pechan prism)用作反旋轉器824。若反旋轉器以相較於成像透鏡242之速率的一半的速率旋轉,則每一個別可控制器件102相對於其各別成像透鏡242顯現為實質上靜止。兩個另外抛物面鏡面826、828將來自反旋轉器824之經反旋轉光束之環擴展至用於移動成像透鏡242之可接受直徑。基板在X方向上移動。In this embodiment, the individually controllable device 102 is configured in a loop along with the use of a collimating lens. The two parabolic mirrors 820, 822 reduce the ring of collimated beams from the individual controllable devices 102 to an acceptable diameter for the inverse rotator 824. In Fig. 26, a peering prism is used as the counter rotator 824. If the counter rotator rotates at a rate that is half the rate of the imaging lens 242, each individual controllable device 102 appears to be substantially stationary relative to its respective imaging lens 242. Two additional parabolic mirrors 826, 828 extend the ring of counter-rotating beams from counter-rotator 824 to an acceptable diameter for moving imaging lens 242. The substrate moves in the X direction.

在此實施例中,每一個別可控制器件102係與一成像透鏡242成對。因此,也許不可能將個別可控制器件102安裝於同心環上,且因此,可能不會獲得橫越基板之寬度之全覆蓋。約33%之作用時間循環係可能的。在此實施例中,成像透鏡242為無需成像場之透鏡。In this embodiment, each individual controllable device 102 is paired with an imaging lens 242. Thus, it may not be possible to mount the individual controllable devices 102 on concentric rings, and thus, full coverage across the width of the substrate may not be obtained. Approximately 33% of the time of action is possible. In this embodiment, imaging lens 242 is a lens that does not require an imaging field.

圖27描繪微影裝置之部分的示意性側視圖佈局,微影裝置具有根據本發明之一實施例的在X-Y平面中實質上靜止之個別可控制器件及相對於個別可控制器件可移動之光學器件。在此配置中,成像透鏡242經配置以圍繞延伸於X-Y平面中之方向旋轉(例如,旋轉轉鼓,而非如(例如)關於圖19至圖26所描述之旋轉轉輪)。參看圖27,可移動成像透鏡242配置於經配置以圍繞(例如)Y方向旋轉之轉鼓上。可移動成像透鏡242自在轉鼓之旋轉軸線與移動成像透鏡242之間於Y方向上以一線延伸的個別可控制器件102接收輻射。原則上,將藉由此轉鼓之可移動成像透鏡242書寫之線將平行於基板之掃描方向831。因此,在45。下所安裝之反旋轉器830經配置以將藉由轉鼓之可移動成像透鏡242產生之線旋轉達90°,使得經成像線垂直於基板之掃描方向。基板在X方向上移動。27 depicts a schematic side view layout of a portion of a lithography apparatus having individual controllable devices that are substantially stationary in an XY plane and optically movable relative to individual controllable devices, in accordance with an embodiment of the present invention. Device. In this configuration, imaging lens 242 is configured to rotate about a direction that extends in the X-Y plane (eg, a rotating drum, rather than, for example, a rotating wheel as described with respect to Figures 19-26). Referring to Figure 27, the movable imaging lens 242 is configured on a drum configured to rotate about, for example, the Y direction. The movable imaging lens 242 receives radiation from the individually controllable device 102 extending in a line in the Y direction between the axis of rotation of the drum and the moving imaging lens 242. In principle, the line to be written by the movable imaging lens 242 thus rotated will be parallel to the scanning direction 831 of the substrate. Therefore, at 45. The counter rotator 830 installed below is configured to rotate the line produced by the movable imaging lens 242 of the drum by 90° such that the imaged line is perpendicular to the scanning direction of the substrate. The substrate moves in the X direction.

對於基板上之每一條紋,在轉鼓上將需要可移動成像透鏡242之一圓圈。若一種此類圓圈可在基板上書寫3毫米寬度之條紋且基板係300毫米寬,則在轉鼓上可能需要700(轉鼓之圓周上的光學器件)×100=70000個光學總成。其在轉鼓上使用圓柱形光學器件之情況下可更少。另外,在此實施例中,成像光學器件可能需要成像特定場,此情形可使光學器件更複雜。約95%之作用時間循環係可能的。此實施例之優點在於:經成像條紋可具有實質上相等長度且實質上平行且筆直。在此實施例中,相對易於用不沿著或結合可移動成像透鏡242移動之器件局域地聚焦。For each stripe on the substrate, a circle of movable imaging lens 242 would be required on the drum. If one such circle can write a strip of 3 mm width on the substrate and the substrate is 300 mm wide, 700 (optics on the circumference of the drum) x 100 = 70,000 optical assemblies may be required on the drum. It can be used in the case where cylindrical optics are used on the drum. Additionally, in this embodiment, the imaging optics may require imaging of a particular field, which may complicate the optics. Approximately 95% of the time of action is possible. An advantage of this embodiment is that the imaged stripes can be of substantially equal length and substantially parallel and straight. In this embodiment, it is relatively easy to focus locally with a device that does not move along or in conjunction with the movable imaging lens 242.

圖28描繪微影裝置之部分的示意性側視圖佈局,微影裝置具有根據本發明之一實施例的在X-Y平面中實質上靜止之個別可控制器件及相對於個別可控制器件可移動之光學器件,且展示成像透鏡242集合相對於個別可控制器件之五個不同旋轉位置。參看圖28,提供在X-Y平面中實質上靜止之個別可控制器件102。可移動成像透鏡242包含複數個透鏡集合,每一透鏡集合包含場透鏡814及成像透鏡818。基板在X方向上移動。可移動成像透鏡242之場透鏡814(例如,球面透鏡)在方向815上相對於個別可控制器件102移動(例如,圍繞一軸線旋轉,在該軸線中,至少部分地以圓形方式配置成像透鏡242)。場透鏡814將光束引導朝向可移動成像透鏡242之成像透鏡818(例如,非球面透鏡,諸如雙重非球面表面透鏡)。如同場透鏡814,成像透鏡818相對於個別可控制器件102移動(例如,圍繞一軸線旋轉,在該軸線中,至少部分地以圓形方式配置成像透鏡242)。在此實施例中,場透鏡814以與成像透鏡818之速率實質上相同的速率移動。28 depicts a schematic side view layout of a portion of a lithography apparatus having individual controllable devices that are substantially stationary in an XY plane and optically movable relative to individual controllable devices, in accordance with an embodiment of the present invention. The device, and showing the set of imaging lenses 242 at five different rotational positions relative to the individual controllable devices. Referring to Figure 28, an individual controllable device 102 that is substantially stationary in the X-Y plane is provided. The movable imaging lens 242 includes a plurality of lens sets, each lens set including a field lens 814 and an imaging lens 818. The substrate moves in the X direction. Field lens 814 (eg, a spherical lens) of movable imaging lens 242 moves relative to individual controllable device 102 in direction 815 (eg, about an axis in which the imaging lens is at least partially configured in a circular manner) 242). Field lens 814 directs the beam toward imaging lens 818 (eg, an aspheric lens, such as a dual aspheric surface lens) of movable imaging lens 242. Like field lens 814, imaging lens 818 moves relative to individual controllable device 102 (eg, about an axis in which imaging lens 242 is at least partially disposed in a circular manner). In this embodiment, field lens 814 is moved at substantially the same rate as imaging lens 818.

場透鏡814之焦平面在部位815處與成像透鏡818之背焦平面重合,此情形給出遠心縮進/遠心伸出系統。相反於圖23之配置,成像透鏡818成像特定場。場透鏡814之焦距係使得用於成像透鏡818之場大小小於2度至3度半角。在此情況下,仍有可能用一單器件光學器件(例如,雙重非球面表面單器件)獲取繞射有限成像。場透鏡814經配置為在個別場透鏡814之間無間隔之情況下加以安裝。在此情況下,個別可控制器件102之作用時間循環可為約95%。The focal plane of field lens 814 coincides with the back focal plane of imaging lens 818 at location 815, which gives a telecentric indentation/telecentric extension system. In contrast to the configuration of Figure 23, imaging lens 818 images a particular field. The focal length of field lens 814 is such that the field size for imaging lens 818 is less than 2 to 3 degrees. In this case, it is still possible to acquire diffraction limited imaging with a single device optic (eg, a dual aspheric surface single device). Field lens 814 is configured to be mounted without gaps between individual field lenses 814. In this case, the individual controllable device 102 can have an active time cycle of about 95%.

成像透鏡818之焦距係使得在基板處具有0.2之NA的情況下,此等透鏡將不變得大於場透鏡814之直徑。等於場透鏡814之直徑的成像透鏡818之焦距將給出成像透鏡818之直徑,該直徑留下用於安裝成像透鏡818之足夠空間。歸因於場角,可書寫比場透鏡814之間距略微更大之線。此情形給出基板上之相鄰個別可控制器件102之經成像線之間的重疊,該重疊亦取決於成像透鏡818之焦距。因此,個別可控制器件102可以與成像透鏡242相同的間距安裝於一環上。圖29描繪圖28之微影裝置之部分的示意性三維圖式。在此描繪中,描繪5個個別可控制器件102與5個關聯可移動成像透鏡集合242。將顯而易見,可提供另外個別可控制器件102及關聯可移動成像透鏡集合242。基板在如藉由箭頭829所示之X方向上移動。在一實施例中,場透鏡814係在該等場透鏡之間無間隔的情況下進行配置。光瞳平面位於817處。The focal length of imaging lens 818 is such that in the case of a NA of 0.2 at the substrate, such lenses will not become larger than the diameter of field lens 814. The focal length of imaging lens 818 equal to the diameter of field lens 814 will give the diameter of imaging lens 818, which leaves enough space for mounting imaging lens 818. Due to the field angle, a slightly larger line than the field lens 814 can be written. This situation gives an overlap between the imaged lines of adjacent individual controllable devices 102 on the substrate, which overlap also depends on the focal length of imaging lens 818. Thus, the individual controllable devices 102 can be mounted to a ring at the same spacing as the imaging lens 242. 29 depicts a schematic three-dimensional view of a portion of the lithography apparatus of FIG. In this depiction, five individual controllable devices 102 and five associated movable imaging lens sets 242 are depicted. It will be apparent that additional individually controllable devices 102 and associated movable imaging lens sets 242 may be provided. The substrate is moved in the X direction as indicated by arrow 829. In one embodiment, field lens 814 is configured without spacing between the field lenses. The pupil plane is located at 817.

為了避免相對較小之雙重非球面成像透鏡818、減少移動成像透鏡242之光學器件的量及將標準雷射二極體用作個別可控制器件102,在此實施例中存在用可移動成像透鏡242之單一透鏡集合成像多個個別可控制器件102的可能性。只要將個別可控制器件102遠心地成像於每一可移動成像透鏡242之場透鏡814上,對應成像透鏡818便將遠心地將來自個別可控制器件102之光束重新成像於基板上。若(例如)同時地書寫8條線,則可以相同產出率而將場透鏡814之直徑及成像透鏡818之焦距增加達8倍,而可將可移動成像透鏡242之量減小為原先的1/8。另外,可減少在X-Y平面中實質上靜止之光學器件,此係因為將個別可控制器件102成像於場透鏡814上所需要的光學器件之部分可為共同的。圖30中示意性地描繪藉由單一可移動成像透鏡242集合同時地書寫8條線之此配置,其中具有成像透鏡242集合之旋轉軸線821及成像透鏡242集合距旋轉軸線821之半徑823。自1.5毫米之間距至12毫米之間距(當藉由單一可移動成像透鏡242集合同時地書寫8條線時)留下用於安裝標準雷射二極體以作為個別可控制器件102之足夠空間。在一實施例中,可使用224個個別可控制器件102(例如,標準雷射二極體)。在一實施例中,可使用120個成像透鏡242集合。在一實施例中,28個實質上靜止光學器件集合可用於224個個別可控制器件102。In order to avoid relatively small dual aspheric imaging lenses 818, reduce the amount of optics that move imaging lens 242, and use standard laser diodes as individual controllable devices 102, there are movable imaging lenses in this embodiment. The likelihood of a single lens set of 242 imaging a plurality of individual controllable devices 102. As long as the individual controllable devices 102 are telecentrically imaged onto the field lens 814 of each movable imaging lens 242, the corresponding imaging lens 818 will telescopically re-image the light beams from the individual controllable devices 102 onto the substrate. If, for example, 8 lines are simultaneously written, the diameter of the field lens 814 and the focal length of the imaging lens 818 can be increased by a factor of eight at the same yield, and the amount of the movable imaging lens 242 can be reduced to the original 1/8. Additionally, optics that are substantially stationary in the X-Y plane can be reduced, as portions of the optics required to image the individual controllable devices 102 onto the field lens 814 can be common. This configuration of simultaneously writing 8 lines by a single movable imaging lens 242 is schematically depicted in FIG. 30 with a rotational axis 821 of the collection of imaging lenses 242 and a radius 823 of the imaging lens 242 assembled from the rotational axis 821. From 1.5 mm to 12 mm (when 8 lines are simultaneously written by a single movable imaging lens 242) leaves enough space for mounting a standard laser diode as an individual controllable device 102 . In an embodiment, 224 individually controllable devices 102 (eg, standard laser diodes) may be used. In an embodiment, a collection of 120 imaging lenses 242 can be used. In one embodiment, 28 sets of substantially stationary optics are available for 224 individually controllable devices 102.

在此實施例中,亦相對易於用不沿著或結合可移動成像透鏡242移動之器件局域地聚焦。只要使場透鏡814上之個別可控制器件102的遠心影像沿著光軸移動且保持遠心,基板上之影像的聚焦便將僅改變且影像將保持遠心。圖31描繪用以在圖28及圖29之配置中以移動脊頂來控制聚焦的示意性配置。在場透鏡814之前將具有脊頂(例如,稜鏡或鏡面集合)834之兩個摺疊鏡面832置放於來自個別可控制器件102之遠心光束中。藉由在方向833上將脊頂834移動遠離或朝向摺疊鏡面832,使影像沿著光軸移位且因此亦相對於基板移位。因為沿著光軸存在大的放大率(此係因為軸向聚焦改變等於F/數目之二次比),所以在基板處以F/2.5光束之25微米散焦將給出在場透鏡814處以5.625毫米之f/37.5光束的聚焦移位(37.5/2.5)2 。此情形意謂脊頂834必須移動該聚焦移位的一半。In this embodiment, it is also relatively easy to focus locally with a device that does not move along or in conjunction with the movable imaging lens 242. As long as the telecentric image of the individual controllable device 102 on the field lens 814 is moved along the optical axis and remains telecentric, the focus of the image on the substrate will only change and the image will remain telecentric. Figure 31 depicts a schematic configuration for controlling focus in a configuration of Figures 28 and 29 with a moving ridge. Two folded mirrors 832 having a ridge top (e.g., 稜鏡 or mirror set) 834 are placed in the telecentric beam from the individual controllable device 102 prior to the field lens 814. By moving the ridge top 834 away from or toward the folded mirror 832 in direction 833, the image is displaced along the optical axis and thus also displaced relative to the substrate. Since there is a large magnification along the optical axis (this is because the axial focus change is equal to the second ratio of F/number), a 25 micron defocus at the substrate with an F/2.5 beam will give a 5.625 at the field lens 814. Focus shift of the f/37.5 beam of millimeters (37.5/2.5) 2 . This situation means that the ridge top 834 must move half of the focus shift.

圖32描繪根據本發明之一實施例之微影裝置的示意性橫截面側視圖,微影裝置具有根據本發明之一實施例的在X-Y平面中實質上靜止之個別可控制器件及相對於個別可控制器件可移動之光學器件。雖然圖32描繪類似於圖23之配置,但其可經適當地修改以適合圖19至圖22及/或圖24至圖31之實施例中的任一者。參看圖32,微影裝置100包含:基板台106,基板台106係用以固持基板;及定位元件116,定位元件116係用以在高達6個自由度中移動基板台106。32 depicts a schematic cross-sectional side view of a lithography apparatus having individual controllable devices that are substantially stationary in an XY plane and relative to individual, in accordance with an embodiment of the present invention, in accordance with an embodiment of the present invention. Controls the movable optics of the device. Although FIG. 32 depicts a configuration similar to that of FIG. 23, it may be modified as appropriate to suit any of the embodiments of FIGS. 19-22 and/or 24-23. Referring to Fig. 32, lithography apparatus 100 includes a substrate stage 106 for holding a substrate, and a positioning component 116 for moving substrate stage 106 in up to six degrees of freedom.

微影裝置100進一步包含配置於框架160上之複數個個別可控制器件102。在此實施例中,個別可控制器件102中之每一者為一輻射發射二極體,例如,雷射二極體(例如,藍紫色雷射二極體)。個別可控制器件102配置於框架838上且沿著Y方向延伸。雖然展示一個框架838,但微影裝置可具有如(例如)在圖5中被類似地展示為陣列200之複數個框架838。透鏡812及816進一步配置於框架838上。框架838在X-Y平面中實質上靜止,且因此,個別可控制器件102以及透鏡812及816在X-Y平面中實質上靜止。框架838、個別可控制器件102以及透鏡812及816可藉由致動器836在Z方向上移動。The lithography apparatus 100 further includes a plurality of individual controllable devices 102 disposed on the frame 160. In this embodiment, each of the individually controllable devices 102 is a radiation emitting diode, such as a laser diode (eg, a blue-violet laser diode). Individual controllable devices 102 are disposed on frame 838 and extend in the Y direction. Although a frame 838 is shown, the lithography apparatus can have a plurality of frames 838 that are similarly shown as array 200 in FIG. 5, for example. Lenses 812 and 816 are further disposed on frame 838. The frame 838 is substantially stationary in the X-Y plane, and thus, the individually controllable device 102 and the lenses 812 and 816 are substantially stationary in the X-Y plane. Frame 838, individual controllable devices 102, and lenses 812 and 816 can be moved in the Z direction by actuator 836.

在此實施例中,提供可旋轉之框架840。場透鏡814及成像透鏡818配置於框架840上,其中場透鏡814與成像透鏡818之組合形成可移動成像透鏡242。在使用中,板(例如)相對於陣列200在藉由圖5中之箭頭所示之方向上圍繞其自有軸線206旋轉。使用馬達216圍繞軸線206旋轉框架840。另外,可藉由馬達216在Z方向上移動框架840,使得可使可移動成像透鏡242相對於基板台106位移。在此實施例中,具有孔隙之孔隙結構248可在透鏡812與關聯個別可控制器件102之間位於透鏡812上方。孔隙結構248可限制透鏡812、關聯個別可控制器件102及/或鄰近透鏡812/個別可控制器件102之繞射效應。In this embodiment, a rotatable frame 840 is provided. Field lens 814 and imaging lens 818 are disposed on frame 840, wherein combination of field lens 814 and imaging lens 818 forms movable imaging lens 242. In use, the plate is rotated about its own axis 206, for example, relative to the array 200 in the direction indicated by the arrows in FIG. The frame 840 is rotated about the axis 206 using the motor 216. Additionally, the frame 840 can be moved in the Z direction by the motor 216 such that the movable imaging lens 242 can be displaced relative to the substrate table 106. In this embodiment, a voided aperture structure 248 can be positioned over lens 812 between lens 812 and associated individual controllable device 102. The aperture structure 248 can limit the diffraction effects of the lens 812, associated individual controllable devices 102, and/or adjacent lenses 812 / individual controllable devices 102.

在一實施例中,微影裝置100包含一或多個可移動板890(例如,可旋轉板(例如,可旋轉圓盤)),該一或多個可移動板890包含光學器件(例如,透鏡)。在圖32之實施例中,展示具有場透鏡814之板890及具有成像透鏡818之板890。在一實施例中,微影裝置不存在當在使用中時旋轉之任何反射光學器件。在一實施例中,微影裝置不存在當在使用中時旋轉之任何反射光學器件,該等反射光學器件自任何或所有個別可控制器件102接收輻射。在一實施例中,一或多個(例如,全部)板890實質上平坦,例如,不具有突出至該板之一或多個表面上方或下方的光學器件(或光學器件之部分)。此情形可(例如)藉由確保板890足夠厚(亦即,至少厚於光學器件之高度且定位該等光學器件,使得該等光學器件不會突出)或藉由遍及板890提供平坦蓋板(圖中未繪示)而達成。確保板之一或多個表面實質上平坦可在裝置係在使用中時輔助(例如)雜訊減少。In one embodiment, lithography apparatus 100 includes one or more movable plates 890 (eg, rotatable plates (eg, rotatable disks)) that include optics (eg, lens). In the embodiment of FIG. 32, a plate 890 having a field lens 814 and a plate 890 having an imaging lens 818 are shown. In an embodiment, the lithography apparatus does not have any reflective optics that rotate when in use. In an embodiment, the lithography apparatus does not have any reflective optics that rotate when in use, and the reflective optics receive radiation from any or all of the individual controllable devices 102. In one embodiment, one or more (eg, all) of the plates 890 are substantially planar, for example, without optics (or portions of optics) that protrude above or below one or more surfaces of the plate. This situation can be provided, for example, by ensuring that the plate 890 is sufficiently thick (i.e., at least thicker than the height of the optic and positioning the optics such that the optics do not protrude) or by providing a flat cover over the plate 890 (not shown in the figure) to achieve. Ensuring that one or more surfaces of the panel are substantially flat can assist in, for example, noise reduction when the device is in use.

圖33示意性地描繪微影裝置之部分的示意性橫截面側視圖。在此實施例中,微影裝置具有在X-Y平面中實質上靜止之個別可控制器件(如下文進一步所論述),但無需為該情況。微影裝置900包含:基板台902,基板台902係用以固持基板;及定位元件904,定位元件904係用以在高達6個自由度中移動基板台902。基板可為抗蝕劑塗佈基板。在一實施例中,基板為晶圓。在一實施例中,基板為多邊形(例如,矩形)基板。在一實施例中,基板為玻璃板。在一實施例中,基板為塑膠基板。在一實施例中,基板為箔片。在一實施例中,微影裝置適於捲軸式製造。Figure 33 schematically depicts a schematic cross-sectional side view of a portion of a lithography apparatus. In this embodiment, the lithography apparatus has individual controllable devices that are substantially stationary in the X-Y plane (as discussed further below), but need not be the case. The lithography apparatus 900 includes a substrate stage 902 for holding the substrate, and a positioning component 904 for moving the substrate stage 902 in up to 6 degrees of freedom. The substrate may be a resist coated substrate. In an embodiment, the substrate is a wafer. In an embodiment, the substrate is a polygonal (eg, rectangular) substrate. In an embodiment, the substrate is a glass plate. In one embodiment, the substrate is a plastic substrate. In an embodiment, the substrate is a foil. In an embodiment, the lithography apparatus is suitable for roll manufacturing.

微影裝置900進一步包含複數個個別可控制自發射對比元件906,複數個個別可控制自發射對比元件906經組態以發射複數個光束。在一實施例中,自發射對比元件906為輻射發射二極體,諸如發光二極體(LED)、有機LED(OLED)、聚合物LED(PLED)或雷射二極體(例如,固態雷射二極體)。在一實施例中,個別可控制器件906中之每一者為一藍紫色雷射二極體(例如,Sanyo型號DL-3146-151)。此等二極體可藉由諸如Sanyo、Nichia、Osram及Nitride之公司供應。在一實施例中,二極體發射(例如)具有約365奈米或約405奈米之波長的UV輻射。在一實施例中,二極體可提供選自0.5毫瓦特至200毫瓦特之範圍的輸出功率。在一實施例中,雷射二極體(裸晶粒)之大小係選自100微米至800微米之範圍。在一實施例中,雷射二極體具有選自0.5平方微米至5平方微米之範圍的發射區域。在一實施例中,雷射二極體具有選自5度至44度之範圍的發散角。在一實施例中,二極體具有用以提供大於或等於約6.4×108 W/(m2 .sr)之總亮度的組態(例如,發射區域、發散角、輸出功率,等等)。The lithography apparatus 900 further includes a plurality of individual controllable self-emissive contrast elements 906 that are configured to transmit a plurality of light beams. In an embodiment, the self-emissive contrast element 906 is a radiation emitting diode such as a light emitting diode (LED), an organic LED (OLED), a polymer LED (PLED), or a laser diode (eg, solid state lightning) Shooting diodes). In one embodiment, each of the individually controllable devices 906 is a blue-violet laser diode (eg, Sanyo model DL-3146-151). These diodes are available from companies such as Sanyo, Nichia, Osram and Nitride. In an embodiment, the diode emits, for example, UV radiation having a wavelength of about 365 nanometers or about 405 nanometers. In an embodiment, the diode can provide an output power selected from the range of 0.5 milliwatts to 200 milliwatts. In one embodiment, the size of the laser diode (bare die) is selected from the range of 100 microns to 800 microns. In an embodiment, the laser diode has an emission region selected from the range of 0.5 square microns to 5 square microns. In an embodiment, the laser diode has a divergence angle selected from the range of 5 degrees to 44 degrees. In an embodiment, the diode has a configuration to provide a total brightness greater than or equal to about 6.4 x 10 8 W/(m 2 .sr) (eg, emission area, divergence angle, output power, etc.) .

自發射對比元件906配置於框架908上且可沿著Y方向及/或X方向延伸。雖然展示一個框架908,但微影裝置可具有複數個框架908,如圖34所示。透鏡920進一步配置於框架908上。框架908在X-Y平面中實質上靜止,且因此,自發射對比元件906及透鏡920在X-Y平面中實質上靜止。可藉由致動器910在Z方向上移動框架908、自發射對比元件906及透鏡920。或者或另外,可藉由與特定透鏡920相關之致動器在Z方向上移動透鏡920。視情況,每一透鏡920可具備一致動器。The self-emissive contrast element 906 is disposed on the frame 908 and can extend along the Y and/or X directions. Although a frame 908 is shown, the lithography apparatus can have a plurality of frames 908, as shown in FIG. Lens 920 is further disposed on frame 908. The frame 908 is substantially stationary in the X-Y plane, and thus, the self-emissive contrast element 906 and the lens 920 are substantially stationary in the X-Y plane. The frame 908, the self-emissive contrast element 906, and the lens 920 can be moved in the Z direction by the actuator 910. Alternatively or additionally, lens 920 can be moved in the Z direction by an actuator associated with a particular lens 920. Each lens 920 can be provided with an actuator, as appropriate.

自發射對比元件906可經組態以發射光束,且投影系統920、924及930可經組態以將光束投影至基板之目標部分上。自發射對比元件906及投影系統形成光學圓柱。微影裝置900可包含致動器(例如,馬達918)以相對於基板移動光學圓柱或其一部分。經配置有場透鏡924及成像透鏡930之框架912可藉由致動器而可旋轉。場透鏡924與成像透鏡930之組合形成可移動光學器件914。在使用中,框架912(例如)在藉由圖34中之箭頭所示之方向上圍繞其自有軸線916旋轉。使用致動器(例如,馬達918)圍繞軸線916旋轉框架912。另外,可藉由馬達910在Z方向上移動框架912,使得可使可移動光學器件914相對於基板台902位移。The self-emissive contrast element 906 can be configured to emit a light beam, and the projection systems 920, 924, and 930 can be configured to project a light beam onto a target portion of the substrate. The self-emissive contrast element 906 and the projection system form an optical cylinder. The lithography apparatus 900 can include an actuator (eg, motor 918) to move the optical cylinder or a portion thereof relative to the substrate. The frame 912 configured with the field lens 924 and the imaging lens 930 is rotatable by an actuator. The combination of field lens 924 and imaging lens 930 forms movable optics 914. In use, frame 912 is rotated about its own axis 916, for example, in the direction indicated by the arrow in FIG. The frame 912 is rotated about the axis 916 using an actuator (eg, motor 918). Additionally, the frame 912 can be moved in the Z direction by the motor 910 such that the movable optics 914 can be displaced relative to the substrate stage 902.

具有孔隙之孔隙結構922可在透鏡920與自發射對比元件906之間位於透鏡920上方。孔隙結構922可限制透鏡920、關聯自發射對比元件906及/或鄰近透鏡920/自發射對比元件906之繞射效應。A voided aperture structure 922 can be positioned over lens 920 between lens 920 and self-emissive contrast element 906. The aperture structure 922 can limit the diffraction effects of the lens 920, associated self-emissive contrast element 906, and/or adjacent lens 920 / self-emissive contrast element 906.

可藉由旋轉框架912且同時地在光學圓柱下方移動基板台902上之基板而使用所描繪裝置。當透鏡920、924及930彼此實質上對準時,自發射對比元件906可通過該等透鏡發射光束。藉由移動透鏡924及930,使基板上之光束之影像遍及基板之一部分進行掃描。藉由同時地在光學圓柱下方移動基板台902上之基板,經受自發射對比元件906之影像的基板之部分亦正移動。藉由在控制器(控制器控制光學圓柱或其部分之旋轉、控制自發射對比元件906之強度,且控制基板之速率)之控制下以高速率「開啟」及「關閉」自發射對比元件906(例如,當自發射對比元件906「關閉」時無輸出或具有低於臨限值之輸出,且當自發射對比元件906「開啟」時具有高於臨限值之輸出),可在基板上之抗蝕劑層中成像所要圖案。The depicted device can be used by rotating the frame 912 while simultaneously moving the substrate on the substrate stage 902 under the optical cylinder. When the lenses 920, 924, and 930 are substantially aligned with one another, the self-emissive contrast element 906 can emit a beam of light through the lenses. By moving the lenses 924 and 930, the image of the light beam on the substrate is scanned over a portion of the substrate. By simultaneously moving the substrate on the substrate stage 902 under the optical cylinder, portions of the substrate that are subjected to the image of the self-emissive contrast element 906 are also moving. The self-emissive contrast element 906 is "on" and "off" at a high rate under control of the controller (the controller controls the rotation of the optical cylinder or portion thereof, controls the intensity of the self-emissive contrast element 906, and controls the rate of the substrate). (eg, when the self-emissive contrast element 906 is "off" there is no output or has an output below the threshold, and when the self-emissive contrast element 906 is "on" there is an output above the threshold), on the substrate The desired pattern is imaged in the resist layer.

圖34描繪具有自發射對比元件906的圖33之微影裝置的示意性俯視圖。如同圖33所示之微影裝置900,微影裝置900包含:基板台902,基板台902係用以固持基板928;定位元件904,定位元件904係用以在高達6個自由度中移動基板台902;對準/位階感測器932,對準/位階感測器932係用以判定自發射對比元件906與基板928之間的對準,且判定基板928是否位於相對於自發射對比元件906之投影之位階處。如所描繪,基板928具有矩形形狀,然而,或者或又,可處理圓形基板。自發射對比元件906配置於框架926上。自發射對比元件906可為輻射發射二極體,例如,雷射二極體(例如,藍紫色雷射二極體)。如圖34所示,自發射對比元件906可經配置成在X-Y平面中延伸之陣列934。陣列934可為狹長線。在一實施例中,陣列934可為自發射對比元件906之單維陣列。在一實施例中,陣列934可為自發射對比元件906之二維陣列。可提供旋轉框架912,旋轉框架912可在藉由箭頭描繪之方向上旋轉。可提供旋轉框架912,旋轉框架912可在藉由箭頭描繪之方向上旋轉。旋轉框架可具備透鏡924、930(圖33所示)以提供自發射對比元件906中之每一者之影像。裝置可包含致動器以相對於基板旋轉包含框架912及透鏡924、930之光學圓柱。FIG. 34 depicts a schematic top view of the lithography apparatus of FIG. 33 with self-emissive contrast element 906. Like the lithography apparatus 900 shown in FIG. 33, the lithography apparatus 900 includes a substrate stage 902 for holding the substrate 928, and a positioning component 904 for moving the substrate in up to 6 degrees of freedom. Stage 902; alignment/level sensor 932, alignment/level sensor 932 is used to determine the alignment between self-emissive contrast element 906 and substrate 928, and to determine if substrate 928 is located relative to self-emissive contrast element The position of the projection of 906. As depicted, the substrate 928 has a rectangular shape, however, or alternatively, the circular substrate can be processed. Self-emissive contrast element 906 is disposed on frame 926. The self-emissive contrast element 906 can be a radiation emitting diode, such as a laser diode (eg, a blue-violet laser diode). As shown in FIG. 34, the self-emissive contrast element 906 can be configured as an array 934 that extends in the X-Y plane. Array 934 can be a narrow line. In an embodiment, array 934 can be a single-dimensional array of self-emissive contrast elements 906. In an embodiment, array 934 can be a two-dimensional array of self-emissive contrast elements 906. A rotating frame 912 can be provided that can be rotated in the direction depicted by the arrows. A rotating frame 912 can be provided that can be rotated in the direction depicted by the arrows. The rotating frame can be provided with lenses 924, 930 (shown in Figure 33) to provide an image of each of the self-emissive contrast elements 906. The device can include an actuator to rotate the optical cylinder comprising the frame 912 and the lenses 924, 930 relative to the substrate.

隨著可旋轉框架旋轉,光束入射於順次透鏡上,且每當藉由光束輻照透鏡時,光束入射於透鏡之表面上所在之地點移動。因為光束取決於光束在透鏡上之入射地點而不同地(以(例如)不同偏轉)投影於基板上,所以光束(當到達基板時)將隨著後繼透鏡之每次通過而進行掃描移動。As the rotatable frame rotates, the beam of light is incident on the sequential lens, and whenever the lens is irradiated by the beam, the beam is incident on the surface of the lens where it is located. Since the beam is projected onto the substrate differently (for example, differently deflected) depending on where the beam is incident on the lens, the beam (when it reaches the substrate) will be scanned for movement with each pass of the subsequent lens.

在上述實施例中,歸因於光學圓柱之部分的移動(在此實例中為旋轉)性質,可經由不同透鏡投影待投影至基板上的圖案之不同部分。為了達成圖案之此等部分之間的準確匹配,可能需要投影系統之透鏡之間的特定匹配。經由各種透鏡之投影之間的差異可與各種原因相關:例如,該等透鏡可各自展示在投影光束時之特定容許度;作為另一實例,該等透鏡中之每一者的安裝可具有一容許度;及/或作為另一實例,相對於可旋轉框架之透鏡定位可具有一容許度。In the above embodiments, due to the movement (in this example, the rotation) property of the portion of the optical cylinder, different portions of the pattern to be projected onto the substrate may be projected via different lenses. In order to achieve an accurate match between these parts of the pattern, a specific match between the lenses of the projection system may be required. The difference between projections through the various lenses can be related to various reasons: for example, the lenses can each exhibit a particular tolerance when projecting the beam; as another example, each of the lenses can be mounted with one Tolerance; and/or as another example, lens positioning relative to the rotatable frame may have a tolerance.

為了能夠改良藉由投影系統之透鏡之投影之間的匹配,藉由可調整件將該等透鏡中之至少一者連接至可旋轉框架。將參看圖35來描述此可調整件之實例。圖35描繪經附接有用於每一透鏡之可調整件936的可旋轉框架912之部分。在此實例中,描繪圖33之可旋轉框架912之轉輪中的下部轉輪,下部轉輪固持透鏡930。可針對根據圖33之可旋轉框架之上部轉輪提供相同或類似構造,上部轉輪固持透鏡924。在圖35所示之實施例中,藉由各別可調整件固持透鏡中之每一者,以便允許個別地調整透鏡中之每一者。儘管在圖35中出於說明性目的而僅描繪3個可調整件及3個透鏡,但應理解,可沿著可旋轉框架912之周邊重複可調整件及對應透鏡。In order to be able to improve the matching between the projections of the lenses by the projection system, at least one of the lenses is coupled to the rotatable frame by an adjustable member. An example of such an adjustable member will be described with reference to FIG. FIG. 35 depicts a portion of a rotatable frame 912 to which an adjustable member 936 for each lens is attached. In this example, the lower wheel in the wheel of the rotatable frame 912 of Figure 33 is depicted, with the lower wheel holding lens 930. The same or similar configuration may be provided for the upper revolving frame of the rotatable frame according to Figure 33, with the upper reel holding lens 924. In the embodiment illustrated in Figure 35, each of the lenses is held by a respective adjustable member to allow for individual adjustment of each of the lenses. Although only three adjustable members and three lenses are depicted in FIG. 35 for illustrative purposes, it should be understood that the adjustable members and corresponding lenses may be repeated along the periphery of the rotatable frame 912.

將在下文中描述此等可調整件中之單一可調整件之實施例。在如圖35所描繪之實施例中,可調整件936包含基座部分938,基座部分938附接至可旋轉框架912。中間部分940係經由楔狀物部分942而附接至基座部分938。在此實施例中,楔狀物部分及中間部分各自包含鄰接面,該等鄰接面相對於垂直於可旋轉框架912之徑向方向R(亦即,根據該可旋轉框架之半徑的方向)的平面略微傾斜。因為鄰接面相對於垂直方向略微傾斜,所以在垂直方向上楔狀物部分942之位置之調整將導致可調整件之長度之調整,因此導致藉由各別可調整件固持之各別透鏡930之調整。更通常,中間部分940及/或楔狀物部分942可具有在可旋轉框架之旋轉軸線之方向上所見的楔狀物形狀。藉由至少一互連螺釘950將基座部分、楔狀物部分及中間部分固持在一起,互連螺釘950係如圖36所描繪且延伸通過楔狀物部分942中之通孔942A。拉緊互連螺釘950將會相抵於楔狀物部分942之對置側按壓基座部分938及中間部分940。Embodiments of a single adjustable member of such adjustable members will be described below. In the embodiment depicted in FIG. 35, the adjustable member 936 includes a base portion 938 that is attached to the rotatable frame 912. The intermediate portion 940 is attached to the base portion 938 via a wedge portion 942. In this embodiment, the wedge portion and the intermediate portion each include an abutment surface that is opposite to a plane perpendicular to the radial direction R of the rotatable frame 912 (i.e., the direction according to the radius of the rotatable frame) Slightly tilted. Since the abutment faces are slightly inclined with respect to the vertical direction, the adjustment of the position of the wedge portion 942 in the vertical direction will result in an adjustment of the length of the adjustable member, thus resulting in adjustment of the respective lenses 930 held by the respective adjustable members. . More generally, the intermediate portion 940 and/or the wedge portion 942 can have a wedge shape as seen in the direction of the axis of rotation of the rotatable frame. The base portion, the wedge portion, and the intermediate portion are held together by at least one interconnecting screw 950, which is depicted in FIG. 36 and extends through the through hole 942A in the wedge portion 942. The tensioning interconnecting screw 950 will press against the base portion 938 and the intermediate portion 940 against the opposite side of the wedge portion 942.

每一透鏡930係藉由各別透鏡固持器948固持,透鏡固持器948又係藉由中間部分940固持。固持器948及中間部分940可被形成為整體部分。中間部分940包含在徑向方向上所見之狹縮部(constriction)944。在此實施例中,該狹縮部係藉由第一狹縮部944A及第二狹縮部944B實施,第一狹縮部944A及第二狹縮部944B自中間部分940之對置側延伸於垂直方向上。藉由推挽式元件(在此實施例中為施拉元件946)橋接第一狹縮部944A。施拉元件946可包含狹長(例如,螺紋)部分946A及對應螺帽部分946B,螺帽部分946B經建構以與狹長部分946A合作。施拉元件946允許在徑向方向R上將力施加於中間部分940之部分上。拉緊施拉元件946將會導致在狹縮部944之任一側上的中間部分之部分(該施拉元件被附接於該等部分之處)之間的拉力。結果,中間部分將展現在其狹縮部分處之某種彎曲度,從而導致中間部分之徑向外部部分及藉由各別可調整件固持之各別透鏡根據箭頭A而在某種程度上移動。Each lens 930 is held by a respective lens holder 948, which in turn is held by the intermediate portion 940. The holder 948 and the intermediate portion 940 can be formed as an integral part. The intermediate portion 940 includes a constriction 944 as seen in the radial direction. In this embodiment, the narrowing portion is implemented by the first narrowing portion 944A and the second narrowing portion 944B, and the first narrowing portion 944A and the second narrowing portion 944B are extended from the opposite sides of the intermediate portion 940. In the vertical direction. The first narrowing 944A is bridged by a push-pull element (the pulling element 946 in this embodiment). The pull element 946 can include an elongated (eg, threaded) portion 946A and a corresponding nut portion 946B that is configured to cooperate with the elongated portion 946A. The pulling element 946 allows a force to be applied to a portion of the intermediate portion 940 in the radial direction R. Tensioning the pulling element 946 will result in a pulling force between portions of the intermediate portion on either side of the constriction 944 where the pulling element is attached. As a result, the intermediate portion will exhibit some degree of curvature at its constricted portion, causing the radially outer portion of the intermediate portion and the respective lenses held by the respective adjustable members to move to some extent according to the arrow A. .

圖37描繪中間部分之另外實施例。此處,將楔狀物部分942及中間部分940附接至基座部分938之互連螺釘延伸至狹縮部944A中,以便允許自外部容易地緊固互連螺釘。因此,對應通孔952可提供於中間部分940之徑向外部部分中。可如下文所描述而執行可調整件936之調整:可藉由兩步方法而針對每一透鏡執行聚焦調整:首先,將中間部分940安裝至基座部分938及楔狀物部分942。在可用於安裝基座部分938及楔狀物部分942之遊隙(play)內定位中間部分940將會允許各別透鏡之粗略定位。可藉由拉緊施拉元件946以根據方向A調整透鏡之位置來執行精細調整。Figure 37 depicts an additional embodiment of the intermediate portion. Here, the interconnecting screw that attaches the wedge portion 942 and the intermediate portion 940 to the base portion 938 extends into the constriction 944A to allow the interconnecting screw to be easily fastened from the outside. Accordingly, a corresponding through hole 952 may be provided in the radially outer portion of the intermediate portion 940. Adjustment of the adjuster 936 can be performed as described below: focus adjustment can be performed for each lens by a two-step method: First, the intermediate portion 940 is mounted to the base portion 938 and the wedge portion 942. Positioning the intermediate portion 940 within a play that can be used to mount the base portion 938 and the wedge portion 942 will allow for coarse positioning of the individual lenses. Fine adjustment can be performed by tensioning the pulling element 946 to adjust the position of the lens according to the direction A.

可藉由兩步方法而針對每一透鏡執行徑向調整(亦即,在可旋轉框架912之徑向方向R上各別透鏡之位置之調整):首先,相對於基座部分938及中間部分940的楔狀物部分942之位置之垂直調整將導致在徑向方向R上透鏡之位置之調整。可藉由拉緊互連螺釘950來執行精細調整。為了允許準確定位,可將互連螺釘950之硬度定尺寸為低於楔狀物部分、基座部分及中間部分之硬度。因此,互連螺釘之拉緊將導致基座部分、楔狀物部分及中間部分之相對較低變形,因此允許在徑向方向上之準確定位。Radial adjustment (i.e., adjustment of the position of the respective lens in the radial direction R of the rotatable frame 912) can be performed by a two-step method: first, relative to the base portion 938 and the intermediate portion Vertical adjustment of the position of the wedge portion 942 of 940 will result in adjustment of the position of the lens in the radial direction R. Fine adjustment can be performed by tightening the interconnecting screw 950. To allow for accurate positioning, the stiffness of the interconnecting screw 950 can be sized to be lower than the hardness of the wedge portion, the base portion, and the intermediate portion. Therefore, the tensioning of the interconnecting screws will result in relatively low deformation of the base portion, the wedge portion and the intermediate portion, thus allowing accurate positioning in the radial direction.

藉由將可調整件936安裝至可旋轉框架912來執行在可旋轉框架之圓周旋轉方向上各別透鏡之調整(亦即,在方向B上之調整),該安裝展現一遊隙。可藉由自發射對比元件之強度之驅動的適當時序來校正透鏡之角位上的剩餘容許度。The adjustment of the individual lenses in the circumferential direction of rotation of the rotatable frame (i.e., the adjustment in direction B) is performed by mounting the adjustable member 936 to the rotatable frame 912, which exhibits a play. The remaining tolerance on the angular position of the lens can be corrected by the appropriate timing of the drive from the intensity of the emission contrast element.

圖38描繪可調整件936被連接至的可旋轉框架912之部分。可調整件固持透鏡,或在此實例中,固持透鏡924、930之總成。應注意,對於每一透鏡或對於透鏡924、930之每一總成,可提供一可調整件,以便允許個別地定位每一透鏡或透鏡之每一總成。在此實施例中,可調整件包含平衡塊狀物。為了達成高產出率,應達成高掃描速率,此情形導致可旋轉框架之高旋轉速率。因此,可在使用期間將高離心力施加於可調整件上。在所設想操作情況下,可預期大約5000 g(亦即,5000倍重力)之離心加速度。以此量級之力可導致在操作期間可調整件之變形。可使可調整件在一定程度上平衡,以便防止離心力使可調整件變形,或至少減少離心力對可調整件之效應。可調整件包含基座部分954,基座部分954提供對可旋轉框架之附接(例如,藉由所描繪螺釘)。平衡塊狀物956係藉由互連結構958而連接至基座部分956。相對於可旋轉框架912之徑向方向(或更理想地,相對於垂直於該可旋轉框架之旋轉軸線的平面),平衡塊狀物係平衡的。在此實施例中,連接結構相對於平衡塊狀物在尺寸上較小(在平行於旋轉軸線之方向上所見),以便提供平衡塊狀物之小程度的「樞轉」。在一實施例中,可調整件具備調整塊狀物部分960。更具體而言,在此實施例中,平衡塊狀物具備調整塊狀物部分960。可藉由適當定位機構(諸如螺紋機構)調整該調整塊狀物部分之位置,以便允許平衡塊狀物(或更通常,可調整件)之重心之某種調整。歸因於在可旋轉框架之旋轉期間經受離心力時重心之調整,合力可提供透鏡924、930之少量位移,藉此提供藉由調整塊狀物960之位置之調整而調整透鏡之位置的可能性。替代調整塊狀物部分960或除了調整塊狀物部分960以外,亦可提供彈簧負載調整結構,彈簧負載調整結構能夠將力施加於可旋轉框架與平衡塊狀物之間,藉此與該調整塊狀物部分同樣地在平衡塊狀物上提供淨合力,該淨合力實現在操作中透鏡924、930之略微位移,因此允許取決於彈簧負載調整結構之施拉而定位透鏡。FIG. 38 depicts a portion of the rotatable frame 912 to which the adjustable member 936 is coupled. The adjustable member retains the lens, or in this example, the assembly of lenses 924, 930. It should be noted that for each lens or for each of the lenses 924, 930, an adjustable member may be provided to allow for individual positioning of each of the lenses or lenses. In this embodiment, the adjustable member comprises a balancing mass. In order to achieve a high yield, a high scan rate should be achieved, which results in a high rate of rotation of the rotatable frame. Therefore, high centrifugal force can be applied to the adjustable member during use. In the case of the envisaged operation, a centrifugal acceleration of approximately 5000 g (i.e., 5000 times gravity) can be expected. This magnitude of force can result in deformation of the adjustable member during operation. The adjustable member can be balanced to some extent to prevent centrifugal force from deforming the adjustable member or at least reducing the effect of centrifugal force on the adjustable member. The adjustable member includes a base portion 954 that provides attachment to the rotatable frame (eg, by the screws depicted). The balancing mass 956 is coupled to the base portion 956 by an interconnect structure 958. The balancing mass is balanced relative to the radial direction of the rotatable frame 912 (or more desirably, relative to a plane perpendicular to the axis of rotation of the rotatable frame). In this embodiment, the attachment structure is relatively small in size relative to the balance mass (as seen in a direction parallel to the axis of rotation) to provide a small degree of "pivoting" of the balance mass. In an embodiment, the adjustable member is provided with an adjustment block portion 960. More specifically, in this embodiment, the balance mass is provided with an adjustment block portion 960. The position of the adjustment block portion can be adjusted by a suitable positioning mechanism, such as a threaded mechanism, to allow for some adjustment of the center of gravity of the balance mass (or more generally, the adjustable member). Due to the adjustment of the center of gravity when subjected to centrifugal forces during rotation of the rotatable frame, the resultant force can provide a small displacement of the lenses 924, 930, thereby providing the possibility of adjusting the position of the lens by adjusting the position of the block 960. . Instead of or in addition to the adjustment mass portion 960, a spring load adjustment structure can be provided that can apply a force between the rotatable frame and the balance mass, thereby adjusting the adjustment The block portion likewise provides a net resultant force on the balancing mass that achieves a slight displacement of the lenses 924, 930 during operation, thus allowing the lens to be positioned depending on the application of the spring loaded adjustment structure.

圖39中描繪可調整件936之另外實施例。圖39再次描繪可調整件936,可調整件936包含基座部分954、平衡塊狀物956,及將平衡塊狀物956連接至基座部分954之連接結構958。在此實施例中,基座部分954包含調整機構962,調整機構962將基座部分954之可旋轉框架側部分964連接至其平衡塊狀物側部分966。調整機構962包含四個狹縮部分968a、968b、968c及968d,狹縮部分968a及968b之兩者將該調整機構連接至可旋轉框架側部分964,其他兩個狹縮部分968c及968d將調整機構962連接至互連結構958。可藉由定位機構(諸如在此實施例中為定位螺桿972)來定位在狹縮部分968a與狹縮部分968c之間的中間部分970。可藉由彈簧負載調整結構974將力加負載至平衡塊狀物956上,彈簧負載調整結構974將該平衡塊狀物連接至可旋轉框架912及/或可旋轉框架側部分964。Another embodiment of an adjustable member 936 is depicted in FIG. 39 again depicts an adjustable member 936 that includes a base portion 954, a balance mass 956, and a connection structure 958 that connects the balance mass 956 to the base portion 954. In this embodiment, the base portion 954 includes an adjustment mechanism 962 that connects the rotatable frame side portion 964 of the base portion 954 to its balanced mass side portion 966. The adjustment mechanism 962 includes four narrowed portions 968a, 968b, 968c, and 968d, and both of the narrowed portions 968a and 968b connect the adjustment mechanism to the rotatable frame side portion 964, and the other two narrowed portions 968c and 968d are adjusted Mechanism 962 is coupled to interconnect structure 958. The intermediate portion 970 between the constricted portion 968a and the constricted portion 968c can be positioned by a positioning mechanism, such as the positioning screw 972 in this embodiment. The force can be applied to the balance mass 956 by a spring load adjustment structure 974 that connects the balance mass to the rotatable frame 912 and/or the rotatable frame side portion 964.

如圖38及圖39所描繪且參看圖38及圖39所描述之實施例允許如下調整所討論之該或該等透鏡924、930之位置。關於圖38所描繪之實施例,向上移動調整塊狀物部分將會使可調整結構略微向內移動透鏡924、930,此係因為包括調整塊狀物部分之平衡塊狀物的重心將略微向上位移,及/或反之亦然。因此,調整塊狀物之此移動將導致在旋轉期間歸因於離心力之略微彎曲,藉此允許使用調整塊狀物部分來調整透鏡之聚焦。關於圖39所描繪之實施例,定位螺桿972之拉緊將導致透鏡924、930向上移動(亦即,在z方向上),以便調整透鏡聚焦,而彈簧負載調整結構974之拉緊導致透鏡924、930向內移動(亦即,在徑向方向上),以便調整所討論之透鏡之徑向位置。因此,圖38及圖39之實施例允許實質上獨立地(亦即,在對同一透鏡之其他調整之相對較低量的「串擾」的情況下)對聚焦(圖38及圖39)及徑向位置(圖39)進行各別調整。該調整允許相對快速地針對安裝至可旋轉框架之複數個臂執行校準程序。同時,歸因於平衡概念,可在很大程度上防止歸因於離心力之彎曲力。應理解,調整塊狀物部分之特徵不限於結合平衡塊狀物之使用。相反地,此解決方案亦可應用於可調整件之其他實施例中。The embodiment depicted in Figures 38 and 39 and described with reference to Figures 38 and 39 allows for adjustment of the position of the or the lenses 924, 930 in question as follows. With respect to the embodiment depicted in Figure 38, moving the adjustment block portion upwards will cause the adjustable structure to move the lenses 924, 930 slightly inwardly because the center of gravity of the balance mass including the adjustment block portion will be slightly upward Displacement, and/or vice versa. Thus, this movement of the adjustment mass will result in a slight bend due to centrifugal force during rotation, thereby allowing adjustment of the focus of the lens using the adjustment block portion. With respect to the embodiment depicted in FIG. 39, the tensioning of the positioning screw 972 will cause the lenses 924, 930 to move upward (ie, in the z-direction) to adjust the lens focus, while the tensioning of the spring load adjustment structure 974 results in the lens 924. , 930 moves inward (i.e., in the radial direction) to adjust the radial position of the lens in question. Thus, the embodiment of Figures 38 and 39 allows focusing (Fig. 38 and Fig. 39) and diameter substantially independently (i.e., in the case of relatively low amounts of "crosstalk" for other adjustments to the same lens). Make individual adjustments to the position (Fig. 39). This adjustment allows the calibration procedure to be performed relatively quickly for a plurality of arms mounted to the rotatable frame. At the same time, due to the balance concept, the bending force attributed to the centrifugal force can be largely prevented. It should be understood that the feature of the adjustment block portion is not limited to the use of a combination weight block. Conversely, this solution can also be applied to other embodiments of the adjustable member.

應理解,調整塊狀物部分之概念可應用於其他組態。舉例而言,在頂側處包含鉸鏈構造之可調整件可具備調整塊狀物部分,調整塊狀物部分之位置在實質上平行於可旋轉框架之旋轉軸線的方向上係可調整的(例如,藉由螺紋機構)。在向下方向(亦即,遠離鉸鏈構造)上調整塊狀物部分之位置之調整將在操作期間增加在可調整件之下部部分處的離心力,藉此提供可調整件之向上及/或向外調整。根據一元件製造方法,可自經投影有圖案之基板製造一元件,諸如顯示器、積體電路或任何其他項目。歸因於在上述實施例中之投影系統的移動(例如,旋轉)性質,可旋轉框架可以高速率旋轉,從而導致在可旋轉框架、透鏡等等上之實質離心力,此情形可導致其變形。儘管存在可調整件之可調整性質,但上述實施例可展現在此等離心力下之低變形。儘管在以上實施例中已關於透鏡930而描述可調整件,但應理解,相同或類似構造可應用於固持及調整裝置之透鏡924或其他器件的位置。It should be understood that the concept of adjusting the block portion can be applied to other configurations. For example, an adjustable member including a hinged configuration at the top side can be provided with an adjustment block portion that is adjustable in a direction substantially parallel to the axis of rotation of the rotatable frame (eg, By means of a threaded mechanism). Adjusting the position of the block portion in the downward direction (i.e., away from the hinge configuration) will increase the centrifugal force at the lower portion of the adjustable member during operation, thereby providing upward and/or upward adjustment of the adjustable member. External adjustment. According to a component manufacturing method, an element such as a display, an integrated circuit, or any other item can be fabricated from a substrate on which a pattern is projected. Due to the moving (eg, rotating) nature of the projection system in the above embodiments, the rotatable frame can be rotated at a high rate, resulting in substantial centrifugal forces on the rotatable frame, lens, etc., which can cause deformation thereof. Despite the adjustable nature of the adjustable members, the above embodiments may exhibit low distortion under such centrifugal forces. Although the adjustable members have been described in relation to the lens 930 in the above embodiments, it should be understood that the same or similar configurations can be applied to the position of the lens 924 or other device that holds and adjusts the device.

下文亦在已編號條款中提供實施例:1. 一種微影裝置,其包含:Embodiments are also provided below in the numbered clauses: 1. A lithography apparatus comprising:

一基板固持器,該基板固持器經建構以固持一基板;一調變器,該調變器經組態以將該基板之一曝光區域曝光至根據一所要圖案所調變之複數個光束;及一投影系統,該投影系統經組態以將該等經調變光束投影至該基板上,且包含用以接收該複數個光束之一透鏡陣列,該投影系統經組態以在曝光該曝光區域期間相對於該調變器移動該透鏡陣列。a substrate holder configured to hold a substrate; a modulator configured to expose an exposed area of the substrate to a plurality of beams modulated according to a desired pattern; And a projection system configured to project the modulated beam onto the substrate and including a lens array for receiving the plurality of beams, the projection system configured to expose the exposure The lens array is moved relative to the modulator during the region.

2. 如實施例1之微影裝置,其中每一透鏡包含至少兩個透鏡,該至少兩個透鏡係沿著自該調變器至該基板的該複數個光束中之至少一者之一光束路徑而配置。2. The lithography apparatus of embodiment 1, wherein each lens comprises at least two lenses, the at least two lenses being along a beam of at least one of the plurality of beams from the modulator to the substrate Configured by path.

3. 如實施例2之微影裝置,其中該至少兩個透鏡中之一第一透鏡包含一場透鏡,且該至少兩個透鏡中之一第二透鏡包含一成像透鏡。3. The lithography apparatus of embodiment 2, wherein one of the at least two lenses comprises a field lens, and one of the at least two lenses comprises an imaging lens.

4. 如實施例3之微影裝置,其中該場透鏡之焦平面與該成像透鏡之背焦平面重合。4. The lithography apparatus of embodiment 3, wherein a focal plane of the field lens coincides with a back focal plane of the imaging lens.

5. 如實施例3或4之微影裝置,其中該成像透鏡包含一雙重非球面表面透鏡。5. The lithography apparatus of embodiment 3 or 4, wherein the imaging lens comprises a dual aspherical surface lens.

6. 如實施例3至5中任一者之微影裝置,其中該場透鏡之焦距係使得用於該成像透鏡之場大小小於2度至3度半角。6. The lithography apparatus of any of embodiments 3 to 5, wherein the focal length of the field lens is such that the field size for the imaging lens is less than 2 to 3 degrees.

7. 如實施例3至6中任一者之微影裝置,其中該成像透鏡之該焦距係使得在該基板處具有0.2之一數值孔徑(NA)的情況下,該成像透鏡不變得大於該場透鏡之直徑。7. The lithography apparatus according to any one of embodiments 3 to 6, wherein the focal length of the imaging lens is such that the imaging lens does not become larger than a numerical aperture (NA) of 0.2 at the substrate. The diameter of the field lens.

8. 如實施例7之微影裝置,其中該成像透鏡之該焦距等於該場透鏡之該直徑。8. The lithography apparatus of embodiment 7, wherein the focal length of the imaging lens is equal to the diameter of the field lens.

9. 如實施例3至8中任一者之微影裝置,其中複數個該等光束係藉由該場透鏡與該成像透鏡之一單一組合而成像。9. The lithography apparatus of any of embodiments 3 to 8, wherein the plurality of beams are imaged by a single combination of the field lens and one of the imaging lenses.

10. 如實施例3至9中任一者之微影裝置,其進一步包含一聚焦控制元件,該聚焦控制元件係沿著自該調變器至該場透鏡的該複數個光束中之至少一者之一光束路徑而配置。10. The lithography apparatus of any of embodiments 3 to 9, further comprising a focus control element that is along at least one of the plurality of light beams from the modulator to the field lens One of the beam paths is configured.

11. 如實施例10之微影裝置,其中該聚焦控制元件包含一摺疊鏡面及一可移動脊頂。11. The lithography apparatus of embodiment 10, wherein the focus control element comprises a folded mirror surface and a movable ridge top.

12. 如實施例3之微影裝置,其進一步包含用以準直自該第一透鏡至該第二透鏡之該光束的在該路徑中之一透鏡。12. The lithography apparatus of embodiment 3, further comprising a lens in the path for collimating the light beam from the first lens to the second lens.

13. 如實施例12之微影裝置,其中用以準直該光束的在該路徑中之該透鏡相對於該調變器實質上靜止。13. The lithography apparatus of embodiment 12, wherein the lens in the path for collimating the beam is substantially stationary relative to the modulator.

14. 如實施例3、12或13中任一者之微影裝置,其進一步包含介於該調變器與該第一透鏡之間的用以將該複數個光束中之至少一者聚焦朝向該第一透鏡的在該路徑中之一透鏡。14. The lithography apparatus of any of embodiments 3, 12 or 13, further comprising between the modulator and the first lens to focus at least one of the plurality of beams One of the lenses of the first lens in the path.

15. 如實施例14之微影裝置,其中用以聚焦該光束的在該路徑中之該透鏡相對於該調變器實質上靜止。15. The lithography apparatus of embodiment 14 wherein the lens in the path to focus the beam is substantially stationary relative to the modulator.

16. 如實施例3或12至15中任一者之微影裝置,其中該場透鏡之光軸與該成像透鏡之光軸重合。16. The lithography apparatus of any of embodiments 3 or 12 to 15, wherein the optical axis of the field lens coincides with the optical axis of the imaging lens.

17. 如實施例2之微影裝置,其中該至少兩個透鏡中之一第一透鏡包含至少兩個子透鏡,其中該複數個光束中之至少一者聚焦於該兩個子透鏡中間。17. The lithography apparatus of embodiment 2, wherein one of the at least two lenses comprises at least two sub-lenses, wherein at least one of the plurality of beams is centered between the two sub-lenses.

18. 如實施例17之微影裝置,其中該至少兩個子透鏡中之每一者具有一實質上相等焦距。18. The lithography apparatus of embodiment 17, wherein each of the at least two sub-lenses has a substantially equal focal length.

19. 如實施例2、17或18中任一者之微影裝置,其中該第一透鏡經配置以將一經準直光束輸出朝向該至少兩個透鏡中之一第二透鏡。19. The lithography apparatus of any of embodiments 2, 17 or 18, wherein the first lens is configured to output a collimated beam of light toward one of the at least two lenses.

20. 如實施例2或17至19中任一者之微影裝置,其經組態以使該至少兩個透鏡中之一第一透鏡以不同於該至少兩個透鏡中之一第二透鏡的一速率移動。20. The lithography apparatus of any one of embodiments 2 or 17 to 19, configured to cause one of the at least two lenses to be different from the second lens of the at least two lenses One rate of movement.

21. 如實施例20之微影裝置,其中該第二透鏡之該速率係兩倍於該第一透鏡之該速率。21. The lithography apparatus of embodiment 20, wherein the rate of the second lens is twice the rate of the first lens.

22. 如實施例1之微影裝置,其中每一透鏡包含一4f遠心縮進/遠心伸出成像系統。22. The lithography apparatus of embodiment 1, wherein each lens comprises a 4f telecentric indentation/telecentric extension imaging system.

23. 如實施例22之微影裝置,其中該4f遠心縮進/遠心伸出成像系統包含至少6個透鏡。23. The lithography apparatus of embodiment 22, wherein the 4f telecentric indentation/telecentric extension imaging system comprises at least 6 lenses.

24. 如實施例1之微影裝置,其進一步包含介於該調變器與該透鏡陣列之間的一反旋轉器。24. The lithography apparatus of embodiment 1, further comprising an inverse rotator interposed between the modulator and the lens array.

25. 如實施例24之微影裝置,其中該反旋轉器包含一別漢稜鏡。25. The lithography apparatus of embodiment 24, wherein the counter rotator comprises a singularity.

26. 如實施例24或25之微影裝置,其中該反旋轉器經配置成以該透鏡陣列之速率的一半的速率移動。26. The lithography apparatus of embodiment 24 or 25, wherein the counter rotator is configured to move at a rate that is half the rate of the lens array.

27. 如實施例24至26中任一者之微影裝置,其進一步包含用以減少介於該調變器與該反旋轉器之間的該等光束之大小的一抛物面鏡面。27. The lithography apparatus of any of embodiments 24 to 26, further comprising a parabolic mirror for reducing the magnitude of the beams between the modulator and the counter-rotator.

28. 如實施例24至27中任一者之微影裝置,其進一步包含用以增加介於該反旋轉器與該透鏡陣列之間的該等光束之該大小的一抛物面鏡面。28. The lithography apparatus of any of embodiments 24-27, further comprising a parabolic mirror for increasing the magnitude of the beams between the counter-rotator and the lens array.

29. 如實施例1至28中任一者之微影裝置,其中該透鏡陣列係相對於該調變器旋轉。29. The lithography apparatus of any of embodiments 1 to 28, wherein the lens array is rotated relative to the modulator.

30. 如實施例1至29中任一者之微影裝置,其中該調變器包含用以發射電磁輻射之複數個個別可控制輻射源。30. The lithography apparatus of any of embodiments 1 to 29, wherein the modulator comprises a plurality of individually controllable radiation sources for emitting electromagnetic radiation.

31. 如實施例1至29中任一者之微影裝置,其中該調變器包含一微鏡面陣列。31. The lithography apparatus of any of embodiments 1 to 29, wherein the modulator comprises a micro-mirror array.

32. 如實施例1至29中任一者之微影裝置,其中該調變器包含一輻射源及一聲光調變器。32. The lithography apparatus of any of embodiments 1 to 29, wherein the modulator comprises a radiation source and an acousto-optic modulator.

33. 一種元件製造方法,其包含:提供根據一所要圖案所調變之複數個光束;及使用接收該複數個光束之一透鏡陣列將該複數個光束投影至一基板上;及在該投影期間相對於該等光束移動該透鏡陣列。33. A method of fabricating a component, comprising: providing a plurality of beams modulated according to a desired pattern; and projecting the plurality of beams onto a substrate using a lens array that receives the plurality of beams; and during the projection The lens array is moved relative to the beams.

34. 如實施例33之方法,其中每一透鏡包含至少兩個透鏡,該至少兩個透鏡係沿著自該複數個光束中之至少一者之一源至該基板的該至少一光束之一光束路徑而配置。34. The method of embodiment 33, wherein each lens comprises at least two lenses, the at least two lens lines being sourced along one of the at least one light beam from the at least one of the plurality of light beams to the substrate Configured by the beam path.

35. 如實施例34之方法,其中該至少兩個透鏡中之一第一透鏡包含一場透鏡,且該至少兩個透鏡中之一第二透鏡包含一成像透鏡。35. The method of embodiment 34, wherein one of the at least two lenses comprises a field lens and one of the at least two lenses comprises an imaging lens.

36. 如實施例35之方法,其中該場透鏡之焦平面與該成像透鏡之背焦平面重合。36. The method of embodiment 35, wherein a focal plane of the field lens coincides with a back focal plane of the imaging lens.

37. 如實施例35或36之方法,其中該成像透鏡包含一雙重非球面表面透鏡。37. The method of embodiment 35 or 36, wherein the imaging lens comprises a dual aspherical surface lens.

38. 如實施例35至37中任一者之方法,其中該場透鏡之焦距係使得用於該成像透鏡之場大小小於2度至3度半角。The method of any one of embodiments 35 to 37, wherein the focal length of the field lens is such that the field size for the imaging lens is less than 2 to 3 degrees.

39. 如實施例35至38中任一者之方法,其中該成像透鏡之該焦距係使得在該基板處具有0.2之一數值孔徑(NA)的情況下,該成像透鏡不變得大於該場透鏡之直徑。The method of any one of embodiments 35 to 38, wherein the focal length of the imaging lens is such that, in the case of having a numerical aperture (NA) of 0.2 at the substrate, the imaging lens does not become larger than the field The diameter of the lens.

40. 如實施例39之方法,其中該成像透鏡之該焦距等於該場透鏡之該直徑。40. The method of embodiment 39, wherein the focal length of the imaging lens is equal to the diameter of the field lens.

41. 如實施例35至40中任一者之方法,其中複數個該等光束係藉由該場透鏡與該成像透鏡之一單一組合而成像。The method of any one of embodiments 35 to 40, wherein the plurality of beams are imaged by a single combination of the field lens and one of the imaging lenses.

42. 如實施例35至41中任一者之方法,其進一步包含在該複數個光束中之至少一者之一源與該場透鏡之間使用一聚焦控制元件。The method of any one of embodiments 35 to 41, further comprising using a focus control element between the source of at least one of the plurality of beams and the field lens.

43. 如實施例42之方法,其中該聚焦控制元件包含一摺疊鏡面及一可移動脊頂。43. The method of embodiment 42, wherein the focus control element comprises a folded mirror surface and a movable ridge top.

44. 如實施例35之方法,其進一步包含使用一透鏡來準直介於該第一透鏡與該第二透鏡之間的該至少一光束。44. The method of embodiment 35, further comprising using a lens to collimate the at least one light beam between the first lens and the second lens.

45. 如實施例44之方法,其中用以準直該至少一光束之該透鏡相對於該至少一光束實質上靜止。45. The method of embodiment 44, wherein the lens for collimating the at least one beam is substantially stationary relative to the at least one beam.

46. 如實施例35、44或45中任一者之方法,其進一步包含在該複數個光束中之至少一者之一源與該第一透鏡之間的該路徑中使用一透鏡將該至少一光束聚焦朝向該第一透鏡。The method of any one of embodiments 35, 44 or 45, further comprising using a lens in the path between the source of at least one of the plurality of beams and the first lens A beam of light is directed toward the first lens.

47. 如實施例46之方法,其中用以聚焦該至少一光束之該透鏡相對於該至少一光束實質上靜止。47. The method of embodiment 46 wherein the lens to focus the at least one beam is substantially stationary relative to the at least one beam.

48. 如實施例35或44至47中任一者之方法,其中該場透鏡之光軸與該對應成像透鏡之光軸重合。The method of any one of embodiments 35 or 44 to 47, wherein the optical axis of the field lens coincides with the optical axis of the corresponding imaging lens.

49. 如實施例34之方法,其中該至少兩個透鏡中之一第一透鏡包含至少兩個子透鏡,其中該複數個光束中之至少一者聚焦於該兩個子透鏡中間。49. The method of embodiment 34, wherein one of the at least two lenses comprises at least two sub-lenses, wherein at least one of the plurality of beams is centered between the two sub-lenses.

50. 如實施例49之方法,其中該至少兩個子透鏡中之每一者具有一實質上相等焦距。50. The method of embodiment 49, wherein each of the at least two sub-lenses has a substantially equal focal length.

51. 如實施例34、49或50中任一者之方法,其中該第一透鏡經配置以將一經準直光束輸出朝向該至少兩個透鏡中之一第二透鏡。The method of any one of embodiments 34, 49 or 50, wherein the first lens is configured to output a collimated beam toward one of the at least two lenses.

52. 如實施例34或49至51中任一者之方法,其包含使該至少兩個透鏡中之一第一透鏡以不同於該至少兩個透鏡中之一第二透鏡的一速率移動。The method of any one of embodiments 34 or 49 to 51, comprising moving one of the at least two lenses at a rate different from the second lens of the at least two lenses.

53. 如實施例52之方法,其中該第二透鏡之該速率係兩倍於該第一透鏡之該速率。53. The method of embodiment 52, wherein the rate of the second lens is twice the rate of the first lens.

54. 如實施例33之方法,其中每一透鏡包含一4f遠心縮進/遠心伸出成像系統。54. The method of embodiment 33, wherein each lens comprises a 4f telecentric indentation/telecentric extension imaging system.

55. 如實施例54之方法,其中該4f遠心縮進/遠心伸出成像系統包含至少6個透鏡。55. The method of embodiment 54, wherein the 4f telecentric indentation/telecentric extension imaging system comprises at least 6 lenses.

56. 如實施例33之方法,其進一步包含在該等光束之一源與該透鏡陣列之間使用一反旋轉器來反旋轉該等光束。56. The method of embodiment 33, further comprising: using an inverse rotator between the one source of the beams and the lens array to counter-rotate the beams.

57. 如實施例56之方法,其中該反旋轉器包含一別漢稜鏡。57. The method of embodiment 56, wherein the counter rotator comprises a singularity.

58. 如實施例56或57之方法,其包含以該透鏡陣列之速率的一半的速率移動該反旋轉器。58. The method of embodiment 56 or 57, comprising moving the counter rotator at a rate that is half the rate of the lens array.

59. 如實施例56至58中任一者之方法,其進一步包含使用一抛物面鏡面來減少介於該光束之一源與該反旋轉器之間的該等光束之大小。The method of any one of embodiments 56 to 58, further comprising using a parabolic mirror to reduce the magnitude of the beams between the source of the beam and the counter rotator.

60. 如實施例56至59中任一者之方法,其進一步包含使用一抛物面鏡面來增加介於該反旋轉器與該透鏡陣列之間的該等光束之該大小。60. The method of any one of embodiments 56 to 59, further comprising using a parabolic mirror to increase the magnitude of the beams between the counter rotator and the lens array.

61. 如實施例33至60中任一者之方法,其包含相對於該等光束旋轉該透鏡陣列。61. The method of any of embodiments 33 to 60, comprising rotating the lens array relative to the beams.

62. 如實施例33至61中任一者之方法,其中複數個個別可控制輻射源中之每一者發射該複數個光束中之每一者。The method of any one of embodiments 33 to 61, wherein each of the plurality of individually controllable radiation sources emits each of the plurality of beams.

63. 如實施例33至61中任一者之方法,其中一微鏡面陣列發射該複數個光束。The method of any one of embodiments 33 to 61, wherein a micromirror array emits the plurality of beams.

64. 如實施例33至61中任一者之方法,其中一輻射源及一聲光調變器產生該複數個光束。The method of any one of embodiments 33 to 61, wherein a source of radiation and an acousto-optic modulator produce the plurality of beams.

65. 一種微影裝置,其包含:一基板固持器,該基板固持器經建構以固持一基板;一調變器,該調變器包含用以發射電磁輻射之複數個個別可控制輻射源,該調變器經組態以將該基板之一曝光區域曝光至根據一所要圖案所調變之複數個光束;及一投影系統,該投影系統經組態以將該等經調變光束投影至該基板上,且包含用以接收該複數個光束之一透鏡陣列,該投影系統經組態以在曝光該曝光區域期間相對於該等個別可控制輻射源移動該透鏡陣列。65. A lithography apparatus comprising: a substrate holder configured to hold a substrate; a modulator comprising a plurality of individually controllable radiation sources for emitting electromagnetic radiation, The modulator is configured to expose an exposed area of the substrate to a plurality of beams modulated according to a desired pattern; and a projection system configured to project the modulated beam to And a lens array for receiving the plurality of beams, the projection system configured to move the lens array relative to the individually controllable radiation sources during exposure of the exposure region.

66. 一種元件製造方法,其包含:使用複數個個別可控制輻射源來提供根據一所要圖案所調變之複數個光束;及使用接收該複數個光束之一透鏡陣列將該複數個光束投影至一基板上;及在該投影期間相對於該等個別可控制輻射源移動該透鏡陣列。66. A method of fabricating a component, comprising: using a plurality of individually controllable radiation sources to provide a plurality of beams modulated according to a desired pattern; and projecting the plurality of beams to a lens array that receives the plurality of beams to On a substrate; and moving the lens array relative to the individually controllable radiation sources during the projection.

67. 一種微影裝置,其包含:一基板固持器,該基板固持器經建構以固持一基板;一調變器,該調變器經組態以將該基板之一曝光區域曝光至根據一所要圖案所調變之複數個光束;及一投影系統,該投影系統經組態以將該等經調變光束投影至該基板上,且包含用以接收該複數個光束之複數個透鏡陣列,該等陣列中之每一者係沿著該複數個光束之光束路徑而分離地配置。67. A lithography apparatus comprising: a substrate holder configured to hold a substrate; a modulator configured to expose an exposed area of the substrate to a a plurality of beams modulated by the pattern; and a projection system configured to project the modulated beam onto the substrate and including a plurality of lens arrays for receiving the plurality of beams, Each of the arrays is separately disposed along a beam path of the plurality of beams.

68. 如實施例67之微影裝置,其中該投影系統經組態以在曝光該曝光區域期間相對於該調變器移動該等透鏡陣列。68. The lithography apparatus of embodiment 67, wherein the projection system is configured to move the array of lenses relative to the modulator during exposure of the exposure region.

69. 如實施例67或68之微影裝置,其中每一陣列之該等透鏡係以一單一本體而配置。69. The lithography apparatus of embodiment 67 or 68, wherein the lenses of each array are configured in a single body.

70. 一種微影裝置,其包含:一基板固持器,該基板固持器經建構以固持一基板;一調變器,該調變器包含用以發射電磁輻射之複數個個別可控制輻射源,該調變器經組態以將該基板之一曝光區域曝光至根據一所要圖案所調變之複數個光束,且經組態以在曝光該曝光區域期間相對於該曝光區域移動該複數個輻射源,使得僅少於該複數個輻射源之全部的輻射源可在任一時間曝光該曝光區域;及一投影系統,該投影系統經組態以將該等經調變光束投影至該基板上。70. A lithography apparatus comprising: a substrate holder configured to hold a substrate; a modulator comprising a plurality of individually controllable radiation sources for emitting electromagnetic radiation, The modulator is configured to expose an exposed area of the substrate to a plurality of beams modulated according to a desired pattern and configured to move the plurality of radiation relative to the exposed area during exposure of the exposed area The source is such that only less than all of the plurality of sources of radiation can expose the exposed area at any one time; and a projection system configured to project the modulated beam onto the substrate.

71. 一種微影裝置,其包含:複數個個別可控制輻射源,該複數個個別可控制輻射源經組態以提供根據一所要圖案所調變之複數個光束,該複數個輻射源中之至少一輻射源係可移動於其發射輻射之一部位與其不發射輻射之一部位之間;一基板固持器,該基板固持器經建構以固持一基板;及一投影系統,該投影系統經組態以將該等經調變光束投影至該基板上。71. A lithography apparatus comprising: a plurality of individually controllable radiation sources configured to provide a plurality of light beams modulated according to a desired pattern, among the plurality of radiation sources The at least one radiation source is movable between a portion of the emitted radiation and a portion of the non-emitting radiation; a substrate holder configured to hold a substrate; and a projection system, the projection system being grouped The states are projected onto the substrate by the modulated beams.

72. 一種微影裝置,其包含:一基板固持器,該基板固持器經建構以固持一基板;一調變器,該調變器包含用以發射電磁輻射之複數個個別可控制輻射源,該調變器經組態以將該基板之一曝光區域曝光至根據一所要圖案所調變之複數個光束,且經組態以在曝光該曝光區域期間相對於該曝光區域移動該複數個輻射源中之至少一輻射源,使得來自該至少一輻射源之輻射同時鄰接於或重疊於來自該複數個輻射源中之至少一另一輻射源的輻射;及一投影系統,該投影系統經組態以將該等經調變光束投影至該基板上。72. A lithography apparatus comprising: a substrate holder configured to hold a substrate; a modulator comprising a plurality of individually controllable radiation sources for emitting electromagnetic radiation, The modulator is configured to expose an exposed area of the substrate to a plurality of beams modulated according to a desired pattern and configured to move the plurality of radiation relative to the exposed area during exposure of the exposed area At least one source of radiation, such that radiation from the at least one source simultaneously abuts or overlaps radiation from at least one other source of the plurality of sources; and a projection system The states are projected onto the substrate by the modulated beams.

73. 一種微影裝置,其包含:一基板固持器,該基板固持器經建構以固持一基板;複數個個別可控制輻射源,該複數個個別可控制輻射源經組態以將根據一所要圖案所調變之複數個光束提供至該基板之一曝光區域,該複數個輻射源中之至少一輻射源係可移動於其可將輻射發射至該曝光區域之一部位與其不能將輻射發射至該曝光區域之一部位之間;及一投影系統,該投影系統經組態以將該等經調變光束投影至該基板上。73. A lithography apparatus comprising: a substrate holder configured to hold a substrate; a plurality of individually controllable radiation sources configured to be configured according to a desired A plurality of beams modulated by the pattern are provided to an exposed area of the substrate, and at least one of the plurality of radiation sources is movable to transmit radiation to a portion of the exposed area and to emit radiation to Between one portion of the exposure region; and a projection system configured to project the modulated beam onto the substrate.

74. 一種微影裝置,其包含:一基板固持器,該基板固持器經建構以固持一基板;一調變器,該調變器包含複數個個別可控制輻射源,該調變器經組態以將根據一所要圖案所調變之複數個光束提供至該基板之一曝光區域,且經組態以在曝光該曝光區域期間相對於該曝光區域移動該複數個輻射源,該調變器具有該複數個光束至該曝光區域之一輸出,該輸出具有少於該複數個輻射源之輸出之區域的一區域;及一投影系統,該投影系統經組態以將該等經調變光束投影至該基板上。74. A lithography apparatus comprising: a substrate holder configured to hold a substrate; a modulator comprising a plurality of individually controllable radiation sources, the modulator being grouped And providing a plurality of light beams modulated according to a desired pattern to an exposed area of the substrate, and configured to move the plurality of radiation sources relative to the exposed area during exposure of the exposed area, the modulator Having the plurality of beams to an output of the exposure region, the output having an area that is less than an area of the output of the plurality of radiation sources; and a projection system configured to modulate the modulated beams Projected onto the substrate.

75. 一種微影裝置,其包含:一基板固持器,該基板固持器經建構以固持一基板;一調變器,該調變器包含複數個個別可控制輻射源陣列,該調變器經組態以將根據一所要圖案所調變之複數個光束提供至該基板之一各別曝光區域,且經組態以相對於其各別曝光區域移動每一陣列,或相對於其各別曝光區域移動來自每一陣列之該複數個光束,或相對於該各別曝光區域移動該陣列及該複數個光束兩者,其中在使用中,該複數個陣列中之一陣列的一各別曝光區域鄰接於或重疊於該複數個陣列中之另一陣列的一各別曝光區域;及一投影系統,該投影系統經組態以將該等經調變光束投影至該基板上。75. A lithography apparatus comprising: a substrate holder configured to hold a substrate; a modulator comprising a plurality of individually controllable radiation source arrays, the modulator Configuring to provide a plurality of beams modulated according to a desired pattern to respective exposure areas of the substrate, and configured to move each array relative to its respective exposure area, or relative to its respective exposure The region moves the plurality of beams from each array or moves the array and the plurality of beams relative to the respective exposure regions, wherein in use, a respective exposure region of one of the plurality of arrays And a projection system that is configured to project the modulated beam onto the substrate.

76. 一種微影裝置,其包含:一基板固持器,該基板固持器經建構以固持一基板;一調變器,該調變器包含複數個個別可控制輻射源,該調變器經組態以將根據一所要圖案所調變之複數個光束提供至該基板之一曝光區域,且經組態以相對於該曝光區域移動該複數個輻射源中之每一者,或相對於該曝光區域移動該複數個光束,或相對於該曝光區域移動該複數個輻射源中之每一者及該複數個光束兩者,其中在使用期間,該等輻射源中之每一者係在其各別功率/前向電流曲線之陡峭部分中操作;及一投影系統,該投影系統經組態以將該等經調變光束投影至該基板上。76. A lithography apparatus comprising: a substrate holder configured to hold a substrate; a modulator comprising a plurality of individually controllable radiation sources, the modulator being grouped And providing a plurality of light beams modulated according to a desired pattern to an exposed area of the substrate, and configured to move each of the plurality of radiation sources relative to the exposure area, or relative to the exposure Moving the plurality of beams or moving each of the plurality of sources and the plurality of beams relative to the exposure region, wherein each of the sources is in use during use Operating in a steep portion of the power/forward current curve; and a projection system configured to project the modulated beam onto the substrate.

77. 一種微影裝置,其包含:一基板固持器,該基板固持器經建構以固持一基板;一調變器,該調變器包含複數個個別可控制輻射源,該調變器經組態以將根據一所要圖案所調變之複數個光束提供至該基板之一曝光區域,且經組態以相對於該曝光區域移動該複數個輻射源中之每一者,或相對於該曝光區域移動該複數個光束,或相對於該曝光區域移動該複數個輻射源中之每一者及該複數個光束兩者,其中該等個別可控制輻射源中之每一者包含一藍紫色雷射二極體;及一投影系統,該投影系統經組態以將該等經調變光束投影至該基板上。77. A lithography apparatus comprising: a substrate holder configured to hold a substrate; a modulator comprising a plurality of individually controllable radiation sources, the modulator being grouped And providing a plurality of light beams modulated according to a desired pattern to an exposed area of the substrate, and configured to move each of the plurality of radiation sources relative to the exposure area, or relative to the exposure The region moves the plurality of beams or moves each of the plurality of radiation sources and the plurality of beams relative to the exposure region, wherein each of the individually controllable radiation sources comprises a blue-violet thunder a diode; and a projection system configured to project the modulated beam onto the substrate.

78. 一種微影裝置,其包含:一基板固持器,該基板固持器經建構以固持一基板;一調變器,該調變器包含複數個個別可控制輻射源,該調變器經組態以將根據一所要圖案所調變之複數個光束提供至該基板之一曝光區域,且經組態以相對於該曝光區域移動該複數個輻射源中之每一者,該複數個輻射源係以至少兩個同心圓形陣列而配置;及一投影系統,該投影系統經組態以將該等經調變光束投影至該基板上。78. A lithography apparatus comprising: a substrate holder configured to hold a substrate; a modulator comprising a plurality of individually controllable radiation sources, the modulator being grouped And providing a plurality of light beams modulated according to a desired pattern to an exposed area of the substrate, and configured to move each of the plurality of radiation sources relative to the exposed area, the plurality of radiation sources Arranged in at least two concentric circular arrays; and a projection system configured to project the modulated beams onto the substrate.

79. 如實施例78之微影裝置,其中該等圓形陣列中之至少一圓形陣列係以與該等圓形陣列中之至少一另一圓形陣列交錯之一方式而配置。79. The lithography apparatus of embodiment 78, wherein the at least one circular array of the circular arrays is configured in a manner of interleaving with at least one other circular array of the circular arrays.

80. 一種微影裝置,其包含:一基板固持器,該基板固持器經建構以固持一基板;一調變器,該調變器包含複數個個別可控制輻射源,該調變器經組態以將根據一所要圖案所調變之複數個光束提供至該基板之一曝光區域,且經組態以相對於該曝光區域移動該複數個輻射源中之每一者,該複數個輻射源係圍繞一結構之一中心而配置,且該結構在該複數個輻射源內部具有延伸通過該結構之一開口;及一投影系統,該投影系統經組態以將該等經調變光束投影至該基板上。80. A lithography apparatus comprising: a substrate holder configured to hold a substrate; a modulator comprising a plurality of individually controllable radiation sources, the modulator being grouped And providing a plurality of light beams modulated according to a desired pattern to an exposed area of the substrate, and configured to move each of the plurality of radiation sources relative to the exposed area, the plurality of radiation sources Arranging around a center of a structure having an opening extending through the structure within the plurality of radiation sources; and a projection system configured to project the modulated beam to On the substrate.

81. 如實施例80之微影裝置,其進一步包含一支撐件,該支撐件係用以將支撐結構固持於該等輻射源處或外部。81. The lithography apparatus of embodiment 80, further comprising a support for holding the support structure at or external to the source of radiation.

82. 如實施例81之微影裝置,其中該支撐件包含一軸承,該軸承係用以准許移動該結構。82. The lithography apparatus of embodiment 81, wherein the support comprises a bearing for permitting movement of the structure.

83. 如實施例81或82之微影裝置,其中該支撐件包含一馬達,該馬達係用以移動該結構。83. The lithography apparatus of embodiment 81 or 82, wherein the support comprises a motor for moving the structure.

84. 一種微影裝置,其包含:一基板固持器,該基板固持器經建構以固持一基板;一調變器,該調變器包含複數個個別可控制輻射源,該調變器經組態以將根據一所要圖案所調變之複數個光束提供至該基板之一曝光區域,且經組態以相對於該曝光區域移動該複數個輻射源中之每一者,該複數個輻射源係圍繞一結構之一中心而配置;一支撐件,該支撐件係用以將該結構支撐於該等輻射源處或外部,該支撐件經組態以旋轉或允許旋轉該結構;及一投影系統,該投影系統經組態以將該等經調變光束投影至該基板上。84. A lithography apparatus comprising: a substrate holder configured to hold a substrate; a modulator comprising a plurality of individually controllable radiation sources, the modulator being grouped And providing a plurality of light beams modulated according to a desired pattern to an exposed area of the substrate, and configured to move each of the plurality of radiation sources relative to the exposed area, the plurality of radiation sources Arranging around a center of a structure; a support member for supporting the structure at or outside the radiation source, the support member configured to rotate or allow rotation of the structure; and a projection The system is configured to project the modulated beam onto the substrate.

85. 如實施例84之微影裝置,其中該支撐件包含一軸承,該軸承係用以准許旋轉該結構。85. The lithography apparatus of embodiment 84, wherein the support comprises a bearing for permitting rotation of the structure.

86. 如實施例84或85之微影裝置,其中該支撐件包含一馬達,該馬達係用以旋轉該結構。86. The lithography apparatus of embodiment 84 or 85, wherein the support comprises a motor for rotating the structure.

87. 一種微影裝置,其包含:一基板固持器,該基板固持器經建構以固持一基板;一調變器,該調變器包含複數個個別可控制輻射源,該調變器經組態以將根據一所要圖案所調變之複數個光束提供至該基板之一曝光區域,且經組態以相對於該曝光區域移動該複數個輻射源中之每一者,該複數個輻射源配置於一可移動結構上,該可移動結構又配置於一可移動板上;及一投影系統,該投影系統經組態以將該等經調變光束投影至該基板上。87. A lithography apparatus comprising: a substrate holder configured to hold a substrate; a modulator comprising a plurality of individually controllable radiation sources, the modulator being grouped And providing a plurality of light beams modulated according to a desired pattern to an exposed area of the substrate, and configured to move each of the plurality of radiation sources relative to the exposed area, the plurality of radiation sources Disposed on a movable structure, the movable structure is further disposed on a movable board; and a projection system configured to project the modulated beam onto the substrate.

88. 如實施例87之微影裝置,其中該可移動結構係可旋轉的。88. The lithography apparatus of embodiment 87, wherein the movable structure is rotatable.

89. 如實施例87或88之微影裝置,其中該可移動板係可旋轉的。89. The lithography apparatus of embodiment 87 or 88, wherein the movable plate is rotatable.

90. 如實施例89之微影裝置,其中該可移動板之旋轉中心係不與該可移動結構之旋轉中心重合。90. The lithography apparatus of embodiment 89, wherein a center of rotation of the movable plate does not coincide with a center of rotation of the movable structure.

91. 一種微影裝置,其包含:一基板固持器,該基板固持器經建構以固持一基板;一調變器,該調變器包含複數個個別可控制輻射源,該調變器經組態以將根據一所要圖案所調變之複數個光束提供至該基板之一曝光區域,且經組態以相對於該曝光區域移動該複數個輻射源中之每一者,該複數個輻射源配置於一可移動結構中或上;一流體通道,該流體通道配置於該可移動結構中以提供一溫度控制流體以至少鄰近於該複數個輻射源;及一投影系統,該投影系統經組態以將該等經調變光束投影至該基板上。91. A lithography apparatus comprising: a substrate holder configured to hold a substrate; a modulator comprising a plurality of individually controllable radiation sources, the modulator being grouped And providing a plurality of light beams modulated according to a desired pattern to an exposed area of the substrate, and configured to move each of the plurality of radiation sources relative to the exposed area, the plurality of radiation sources Arranging in or on a movable structure; a fluid channel disposed in the movable structure to provide a temperature control fluid to be adjacent to at least the plurality of radiation sources; and a projection system, the projection system being grouped The states are projected onto the substrate by the modulated beams.

92. 如實施例91之微影裝置,其進一步包含一感測器,該感測器位於該可移動結構中或上。92. The lithography apparatus of embodiment 91, further comprising a sensor located in or on the movable structure.

93. 如實施例91或92之微影裝置,其進一步包含一感測器,該感測器位於鄰近於該複數個輻射源中之至少一輻射源的一位置處,而非位於該可移動結構中或上。93. The lithography apparatus of embodiment 91 or 92, further comprising a sensor located at a location adjacent to at least one of the plurality of radiation sources rather than being movable In or on the structure.

94. 如實施例92或93之微影裝置,其中該感測器包含一溫度感測器。94. The lithography apparatus of embodiment 92 or 93, wherein the sensor comprises a temperature sensor.

95. 如實施例92至94中任一者之微影裝置,其中該感測器包含經組態以量測該結構之一膨脹及/或收縮的一感測器。The lithography apparatus of any one of embodiments 92 to 94, wherein the sensor comprises a sensor configured to measure expansion and/or contraction of one of the structures.

96. 一種微影裝置,其包含:一基板固持器,該基板固持器經建構以固持一基板;一調變器,該調變器包含複數個個別可控制輻射源,該調變器經組態以將根據一所要圖案所調變之複數個光束提供至該基板之一曝光區域,且經組態以相對於該曝光區域移動該複數個輻射源中之每一者,該複數個輻射源配置於一可移動結構中或上;一散熱片,該散熱片配置於該可移動結構中或上以提供該結構之溫度控制;及一投影系統,該投影系統經組態以將該等經調變光束投影至該基板上。96. A lithography apparatus comprising: a substrate holder configured to hold a substrate; a modulator comprising a plurality of individually controllable radiation sources, the modulator being grouped And providing a plurality of light beams modulated according to a desired pattern to an exposed area of the substrate, and configured to move each of the plurality of radiation sources relative to the exposed area, the plurality of radiation sources Arranging in or on a movable structure; a heat sink disposed in or on the movable structure to provide temperature control of the structure; and a projection system configured to: The modulated beam is projected onto the substrate.

97. 如實施例96之微影裝置,其進一步包含一靜止散熱片,該靜止散熱片係用以與在該可移動結構中或上之該散熱片合作。97. The lithography apparatus of embodiment 96, further comprising a stationary heat sink for cooperating with the heat sink in or on the movable structure.

98. 如實施例97之微影裝置,其包含在該可移動結構中或上之至少兩個散熱片,且該靜止散熱片位於在該可移動結構中或上之該等散熱片中之至少一散熱片與在該可移動結構中或上之該等散熱片中之至少一另一散熱片之間。98. The lithography apparatus of embodiment 97, comprising at least two heat sinks in or on the movable structure, and wherein the stationary heat sink is located in at least one of the heat sinks in or on the movable structure A heat sink is interposed between at least one of the heat sinks in or on the movable structure.

99. 一種微影裝置,其包含:一基板固持器,該基板固持器經建構以固持一基板;一調變器,該調變器包含複數個個別可控制輻射源,該調變器經組態以將根據一所要圖案所調變之複數個光束提供至該基板之一曝光區域,且經組態以相對於該曝光區域移動該複數個輻射源中之每一者,該複數個輻射源配置於一可移動結構中或上;一流體供應元件,該流體供應元件經組態以將一流體供應至該結構之一外部表面以控制該結構之一溫度;及一投影系統,該投影系統經組態以將該等經調變光束投影至該基板上。99. A lithography apparatus comprising: a substrate holder configured to hold a substrate; a modulator comprising a plurality of individually controllable radiation sources, the modulator being grouped And providing a plurality of light beams modulated according to a desired pattern to an exposed area of the substrate, and configured to move each of the plurality of radiation sources relative to the exposed area, the plurality of radiation sources Arranging in or on a movable structure; a fluid supply element configured to supply a fluid to an exterior surface of the structure to control a temperature of the structure; and a projection system, the projection system The modulated beam is configured to be projected onto the substrate.

100. 如實施例99之微影裝置,其中該流體供應元件經組態以供應氣體。100. The lithography apparatus of embodiment 99, wherein the fluid supply element is configured to supply a gas.

101. 如實施例99之微影裝置,其中該流體供應元件經組態以供應一液體。101. The lithography apparatus of embodiment 99, wherein the fluid supply element is configured to supply a liquid.

102. 如實施例101之微影裝置,其進一步包含一流體限制結構,該流體限制結構經組態以使該液體維持接觸該結構。102. The lithography apparatus of embodiment 101, further comprising a fluid confinement structure configured to maintain the liquid in contact with the structure.

103. 如實施例102之微影裝置,其中該流體限制結構經組態以維持介於該結構與該流體限制結構之間的一密封。103. The lithography apparatus of embodiment 102, wherein the fluid confinement structure is configured to maintain a seal between the structure and the fluid confinement structure.

104. 一種微影裝置,其包含:一基板固持器,該基板固持器經建構以固持一基板;一調變器,該調變器包含複數個個別可控制輻射源,該調變器經組態以將根據一所要圖案所調變之複數個光束提供至該基板之一曝光區域,且經組態以相對於該曝光區域移動該複數個輻射源中之每一者;一結構分離透鏡,該結構分離透鏡經附接成接近或附接至該複數個輻射源中之每一輻射源且隨著各別輻射源而可移動。104. A lithography apparatus comprising: a substrate holder configured to hold a substrate; a modulator comprising a plurality of individually controllable radiation sources, the modulator being grouped And providing a plurality of light beams modulated according to a desired pattern to an exposed area of the substrate, and configured to move each of the plurality of radiation sources relative to the exposed area; a structural separation lens, The structural separation lens is attached proximate or attached to each of the plurality of radiation sources and is movable with the respective radiation source.

105. 如實施例104之微影裝置,其進一步包含一致動器,該致動器經組態以使一透鏡相對於其各別輻射源位移。105. The lithography apparatus of embodiment 104, further comprising an actuator configured to displace a lens relative to its respective radiation source.

106. 如實施例104或105之微影裝置,其進一步包含一致動器,該致動器經組態以使一透鏡及其各別輻射源相對於支撐該透鏡及其各別輻射源之一結構位移。106. The lithography apparatus of embodiment 104 or 105, further comprising an actuator configured to cause a lens and its respective radiation source to support one of the lens and its respective radiation source Structural displacement.

107. 如實施例105或106之微影裝置,其中該致動器經組態以在高達3個自由度中移動該透鏡。107. The lithography apparatus of embodiment 105 or 106, wherein the actuator is configured to move the lens in up to 3 degrees of freedom.

108. 如實施例104至107中任一者之微影裝置,其進一步包含一孔隙結構,該孔隙結構位於該複數個輻射源中之至少一輻射源下游。108. The lithography apparatus of any one of embodiments 104 to 107, further comprising a pore structure located downstream of at least one of the plurality of radiation sources.

109. 如實施例104至107中任一者之微影裝置,其中該透鏡係用一高熱導率材料附接至支撐該透鏡及其各別輻射源之一結構。The lithography apparatus of any one of embodiments 104 to 107, wherein the lens is attached to a structure supporting the lens and its respective radiation source with a high thermal conductivity material.

110. 一種微影裝置,其包含:一基板固持器,該基板固持器經建構以固持一基板;一調變器,該調變器包含複數個個別可控制輻射源,該調變器經組態以將根據一所要圖案所調變之複數個光束提供至該基板之一曝光區域,且經組態以相對於該曝光區域移動該複數個輻射源中之每一者;一空間相干性破壞元件,該空間相干性破壞元件經組態以擾亂來自該複數個輻射源中之至少一輻射源的輻射;及一投影系統,該投影系統經組態以將該等經調變光束投影至該基板上。110. A lithography apparatus comprising: a substrate holder configured to hold a substrate; a modulator comprising a plurality of individually controllable radiation sources, the modulator being grouped And providing a plurality of light beams modulated according to a desired pattern to an exposed area of the substrate, and configured to move each of the plurality of radiation sources relative to the exposed area; a spatial coherence destruction An element that is configured to disturb radiation from at least one of the plurality of radiation sources; and a projection system configured to project the modulated beam to the On the substrate.

111. 如實施例110之微影裝置,其中該空間相干性破壞元件包含一靜止板,且該至少一輻射源係相對於該板可移動。111. The lithography apparatus of embodiment 110, wherein the spatial coherence disrupting element comprises a stationary plate and the at least one radiation source is movable relative to the plate.

112. 如實施例110之微影裝置,其中該空間相干性破壞元件包含選自以下各項之至少一者:一相位調變器、一旋轉板或一振動板。112. The lithography apparatus of embodiment 110, wherein the spatial coherence disrupting element comprises at least one selected from the group consisting of: a phase modulator, a rotating plate, or a vibrating plate.

113. 一種微影裝置,其包含:一基板固持器,該基板固持器經建構以固持一基板;一調變器,該調變器包含複數個個別可控制輻射源,該調變器經組態以將根據一所要圖案所調變之複數個光束提供至該基板之一曝光區域,且經組態以相對於該曝光區域移動該複數個輻射源中之每一者;一感測器,該感測器經組態以量測與該複數個輻射源中之至少一輻射源相關聯的聚焦,該感測器之至少一部分處於該至少一輻射源中或上;及一投影系統,該投影系統經組態以將該等經調變光束投影至該基板上。113. A lithography apparatus comprising: a substrate holder configured to hold a substrate; a modulator comprising a plurality of individually controllable radiation sources, the modulator being grouped And providing a plurality of light beams modulated according to a desired pattern to an exposed area of the substrate, and configured to move each of the plurality of radiation sources relative to the exposed area; a sensor, The sensor is configured to measure a focus associated with at least one of the plurality of radiation sources, at least a portion of the sensor being in or on the at least one radiation source; and a projection system, the The projection system is configured to project the modulated beam onto the substrate.

114. 如實施例113之微影裝置,其中該感測器經組態以個別地量測與該等輻射源中之每一者相關聯的聚焦。114. The lithography apparatus of embodiment 113, wherein the sensor is configured to individually measure a focus associated with each of the radiation sources.

115. 如實施例113或114之微影裝置,其中該感測器為刀緣聚焦偵測器。115. The lithography apparatus of embodiment 113 or 114, wherein the sensor is a knife edge focus detector.

116. 一種微影裝置,其包含:一基板固持器,該基板固持器經建構以固持一基板;一調變器,該調變器包含複數個個別可控制輻射源,該調變器經組態以將根據一所要圖案所調變之複數個光束提供至該基板之一曝光區域,且經組態以相對於該曝光區域移動該複數個輻射源中之每一者;一傳輸器,該傳輸器經組態以將一信號及/或功率無線地傳輸至該複數個輻射源以分別控制及/或供電給該複數個輻射源;及一投影系統,該投影系統經組態以將該等經調變光束投影至該基板上。116. A lithography apparatus comprising: a substrate holder configured to hold a substrate; a modulator comprising a plurality of individually controllable radiation sources, the modulator being grouped And providing a plurality of light beams modulated according to a desired pattern to an exposed area of the substrate, and configured to move each of the plurality of radiation sources relative to the exposed area; a transmitter, the The transmitter is configured to wirelessly transmit a signal and/or power to the plurality of radiation sources to separately control and/or power the plurality of radiation sources; and a projection system configured to The modulated beam is projected onto the substrate.

117. 如實施例116之微影裝置,其中該信號包含複數個信號,且該微影裝置進一步包含用以將該複數個信號中之每一者發送朝向一各別輻射源的一解多工器。117. The lithography apparatus of embodiment 116, wherein the signal comprises a plurality of signals, and wherein the lithography apparatus further comprises a demultiplexing to transmit each of the plurality of signals toward a respective one of the plurality of sources. Device.

118. 一種微影裝置,其包含:一基板固持器,該基板固持器經建構以固持一基板;一調變器,該調變器包含複數個個別可控制輻射源,該調變器經組態以將根據一所要圖案所調變之複數個光束提供至該基板之一曝光區域,且經組態以相對於該曝光區域移動該複數個輻射源中之每一者,該複數個輻射源配置於一可移動結構中或上;一單一線,該單一線將一控制器連接至該可移動結構,以將複數個信號及/或功率傳輸至該複數個輻射源以分別控制及/或供電給該複數個輻射源;及一投影系統,該投影系統經組態以將該等經調變光束投影至該基板上。118. A lithography apparatus comprising: a substrate holder configured to hold a substrate; a modulator comprising a plurality of individually controllable radiation sources, the modulator being grouped And providing a plurality of light beams modulated according to a desired pattern to an exposed area of the substrate, and configured to move each of the plurality of radiation sources relative to the exposed area, the plurality of radiation sources Arranging in or on a movable structure; a single line connecting a controller to the movable structure to transmit a plurality of signals and/or power to the plurality of radiation sources for respective control and/or Powering the plurality of radiation sources; and a projection system configured to project the modulated light beams onto the substrate.

119. 如實施例118之微影裝置,其中該信號包含複數個信號,且該微影裝置進一步包含用以將該複數個信號中之每一者發送朝向一各別輻射源的一解多工器。119. The lithography apparatus of embodiment 118, wherein the signal comprises a plurality of signals, and the lithography apparatus further comprises a demultiplexing to transmit each of the plurality of signals toward a respective one of the plurality of sources Device.

120. 如實施例118或119之微影裝置,其中該線包含一光學線。120. The lithography apparatus of embodiment 118 or 119, wherein the line comprises an optical line.

121. 一種微影裝置,其包含:一基板固持器,該基板固持器經建構以固持一基板;一調變器,該調變器包含複數個個別可控制輻射源,該調變器經組態以將根據一所要圖案所調變之複數個光束提供至該基板之一曝光區域,且經組態以相對於該曝光區域移動該複數個輻射源中之每一者;一感測器,該感測器係用以量測已或待藉由該複數個輻射源中之至少一輻射源透射朝向該基板之輻射的一特性;及一投影系統,該投影系統經組態以將該等經調變光束投影至該基板上。121. A lithography apparatus comprising: a substrate holder configured to hold a substrate; a modulator comprising a plurality of individually controllable radiation sources, the modulator being grouped And providing a plurality of light beams modulated according to a desired pattern to an exposed area of the substrate, and configured to move each of the plurality of radiation sources relative to the exposed area; a sensor, The sensor is configured to measure a characteristic that has been or is to be transmitted by the at least one of the plurality of radiation sources toward the substrate; and a projection system configured to: The modulated beam is projected onto the substrate.

122. 如實施例121之微影裝置,其中該感測器之至少一部分位於該基板固持器中或上。122. The lithography apparatus of embodiment 121, wherein at least a portion of the sensor is located in or on the substrate holder.

123. 如實施例122之微影裝置,其中該感測器之該至少一部分在該基板被支撐於該基板固持器上所在之一區域外部的一位置處位於該基板固持器中或上。123. The lithography apparatus of embodiment 122, wherein the at least a portion of the sensor is located in or on the substrate holder at a location external to a region of the substrate that is supported on the substrate holder.

124. 如實施例121至123中任一者之微影裝置,其中該感測器之至少一部分位於在使用中實質上延伸於該基板之一掃描方向上的該基板之一側處。The lithography apparatus of any one of embodiments 121 to 123, wherein at least a portion of the sensor is located at a side of the substrate that extends substantially in a scanning direction of one of the substrates in use.

125. 如實施例121至124中任一者之微影裝置,其中該感測器之至少一部分安裝於用以支撐可移動結構之一框架中或上。The lithography apparatus of any one of embodiments 121 to 124, wherein at least a portion of the sensor is mounted in or on a frame for supporting the movable structure.

126. 如實施例121至125中任一者之微影裝置,其中該感測器經組態以量測來自該曝光區域外部之該至少一輻射源的輻射。126. The lithography apparatus of any one of embodiments 121 to 125, wherein the sensor is configured to measure radiation from the at least one radiation source external to the exposed area.

127. 如實施例121至126中任一者之微影裝置,其中該感測器之至少一部分係可移動的。127. The lithography apparatus of any one of embodiments 121 to 126, wherein at least a portion of the sensor is movable.

128. 如實施例121至127中任一者之微影裝置,其進一步包含一控制器,該控制器經組態以基於感測器結果而校準該至少一輻射源。128. The lithography apparatus of any of embodiments 121 to 127, further comprising a controller configured to calibrate the at least one radiation source based on the sensor result.

129. 一種微影裝置,其包含:一基板固持器,該基板固持器經建構以固持一基板;一調變器,該調變器包含複數個個別可控制輻射源,該調變器經組態以將根據一所要圖案所調變之複數個光束提供至該基板之一曝光區域,且經組態以相對於該曝光區域移動該複數個輻射源中之每一者,該複數個輻射源配置於一可移動結構中或上;一感測器,該感測器係用以量測該可移動結構之一位置;及一投影系統,該投影系統經組態以將該等經調變光束投影至該基板上。129. A lithography apparatus comprising: a substrate holder configured to hold a substrate; a modulator comprising a plurality of individually controllable radiation sources, the modulator being grouped And providing a plurality of light beams modulated according to a desired pattern to an exposed area of the substrate, and configured to move each of the plurality of radiation sources relative to the exposed area, the plurality of radiation sources Arranging in or on a movable structure; a sensor for measuring a position of the movable structure; and a projection system configured to modulate the same The beam is projected onto the substrate.

130. 如實施例129之微影裝置,其中該感測器之至少一部分安裝於支撐該可移動結構之一框架中或上。130. The lithography apparatus of embodiment 129, wherein at least a portion of the sensor is mounted in or on a frame that supports the movable structure.

131. 一種微影裝置,其包含:一基板固持器,該基板固持器經建構以固持一基板;一調變器,該調變器包含複數個個別可控制輻射源,該調變器經組態以將根據一所要圖案所調變之複數個光束提供至該基板之一曝光區域,且經組態以相對於該曝光區域移動該複數個輻射源中之每一者,該複數個輻射源中之每一者具有或提供一識別;一感測器,該感測器經組態以偵測該識別;及一投影系統,該投影系統經組態以將該等經調變光束投影至該基板上。131. A lithography apparatus comprising: a substrate holder configured to hold a substrate; a modulator comprising a plurality of individually controllable radiation sources, the modulator being grouped And providing a plurality of light beams modulated according to a desired pattern to an exposed area of the substrate, and configured to move each of the plurality of radiation sources relative to the exposed area, the plurality of radiation sources Each of the sensors has or provides an identification; a sensor configured to detect the identification; and a projection system configured to project the modulated beam to On the substrate.

132. 如實施例131之微影裝置,其中該感測器之至少一部分安裝於支撐該複數個輻射源之一框架中或上。132. The lithography apparatus of embodiment 131, wherein at least a portion of the sensor is mounted in or on a frame supporting one of the plurality of radiation sources.

133. 如實施例131或132之微影裝置,其中該識別包含來自一各別輻射源之輻射的一頻率。133. The lithography apparatus of embodiment 131 or 132, wherein the identification comprises a frequency of radiation from a respective radiation source.

134. 如實施例131至133中任一者之微影裝置,其中該識別包含選自以下各項之至少一者:一條碼、一射頻識別或一標記。134. The lithography apparatus of any one of embodiments 131 to 133, wherein the identification comprises at least one selected from the group consisting of: a code, a radio frequency identification, or a label.

135. 一種微影裝置,其包含:一基板固持器,該基板固持器經建構以固持一基板;一調變器,該調變器包含複數個個別可控制輻射源,該調變器經組態以將根據一所要圖案所調變之複數個光束提供至該基板之一曝光區域,且經組態以相對於該曝光區域移動該複數個輻射源中之每一者;一感測器,該感測器經組態以偵測藉由該基板重新引導的來自該複數個輻射源中之至少一輻射源的輻射;及一投影系統,該投影系統經組態以將該等經調變光束投影至該基板上。135. A lithography apparatus comprising: a substrate holder configured to hold a substrate; a modulator comprising a plurality of individually controllable radiation sources, the modulator being grouped And providing a plurality of light beams modulated according to a desired pattern to an exposed area of the substrate, and configured to move each of the plurality of radiation sources relative to the exposed area; a sensor, The sensor is configured to detect radiation from at least one of the plurality of radiation sources that is redirected by the substrate; and a projection system configured to modulate the same The beam is projected onto the substrate.

136. 如實施例135之微影裝置,其中該感測器經組態以根據該經重新引導輻射而判定入射於該基板上的來自該至少一輻射源之該輻射之一光點的一部位。136. The lithography apparatus of embodiment 135, wherein the sensor is configured to determine a portion of the spot of the radiation from the at least one radiation source incident on the substrate based on the redirected radiation .

137. 如實施例70至136中任一者之微影裝置,其中該調變器經組態以圍繞實質上平行於該複數個光束之一傳播方向的一軸線旋轉至少一輻射源。The lithography apparatus of any one of embodiments 70 to 136, wherein the modulator is configured to rotate the at least one radiation source about an axis substantially parallel to a direction of propagation of one of the plurality of beams.

138. 如實施例70至137中任一者之微影裝置,其中該調變器經組態以在橫向於該複數個光束之一傳播方向的一方向上平移至少一輻射源。138. The lithography apparatus of any one of embodiments 70 to 137, wherein the modulator is configured to translate at least one radiation source in a direction transverse to a direction of propagation of one of the plurality of beams.

139. 如實施例70至138中任一者之微影裝置,其中該調變器包含一光束偏轉器,該光束偏轉器經組態以移動該複數個光束。139. The lithography apparatus of any one of embodiments 70 to 138, wherein the modulator comprises a beam deflector configured to move the plurality of beams.

140. 如實施例139之微影裝置,其中該光束偏轉器係選自由鏡面、稜鏡或聲光調變器組成之群組。140. The lithography apparatus of embodiment 139, wherein the beam deflector is selected from the group consisting of a mirror, a chirp, or an acousto-optic modulator.

141. 如實施例139之微影裝置,其中該光束偏轉器包含一多邊形。141. The lithography apparatus of embodiment 139, wherein the beam deflector comprises a polygon.

142. 如實施例139之微影裝置,其中該光束偏轉器經組態以振動。142. The lithography apparatus of embodiment 139, wherein the beam deflector is configured to vibrate.

143. 如實施例139之微影裝置,其中該光束偏轉器經組態以旋轉。143. The lithography apparatus of embodiment 139, wherein the beam deflector is configured to rotate.

144. 如實施例70至143中任一者之微影裝置,其中該基板固持器經組態以在提供該複數個光束所沿著之一方向上移動該基板。144. The lithography apparatus of any one of embodiments 70 to 143, wherein the substrate holder is configured to move the substrate in a direction along which the plurality of beams are provided.

145. 如實施例144之微影裝置,其中該基板之該移動為一旋轉。145. The lithography apparatus of embodiment 144, wherein the movement of the substrate is a rotation.

146. 如實施例70至145中任一者之微影裝置,其中該複數個輻射源係可一起移動的。146. The lithography apparatus of any one of embodiments 70 to 145, wherein the plurality of radiation sources are movable together.

147. 如實施例70至146中任一者之微影裝置,其中該複數個輻射源係以一圓形方式而配置。147. The lithography apparatus of any one of embodiments 70 to 146, wherein the plurality of radiation sources are configured in a circular manner.

148. 如實施例70至147中任一者之微影裝置,其中該複數個輻射源配置於一板中且彼此隔開。148. The lithography apparatus of any one of embodiments 70 to 147, wherein the plurality of radiation sources are disposed in a plate and spaced apart from each other.

149. 如實施例70至148中任一者之微影裝置,其中該投影系統包含一透鏡陣列。149. The lithography apparatus of any one of embodiments 70 to 148, wherein the projection system comprises a lens array.

150. 如實施例70至149中任一者之微影裝置,其中該投影系統基本上由一透鏡陣列組成。The lithography apparatus of any one of embodiments 70 to 149, wherein the projection system consists essentially of a lens array.

151. 如實施例149或150之微影裝置,其中該透鏡陣列之一透鏡具有一高數值孔徑,且該微影裝置經組態以使該基板處於與該透鏡相關聯的該輻射之該聚焦外,以有效地降低該透鏡之該數值孔徑。151. The lithography apparatus of embodiment 149 or 150, wherein one lens of the lens array has a high numerical aperture, and the lithography apparatus is configured to place the substrate in the focus of the radiation associated with the lens In addition, the numerical aperture of the lens is effectively reduced.

152. 如實施例70至151中任一者之微影裝置,其中該等輻射源中之每一者包含一雷射二極體。152. The lithography apparatus of any one of embodiments 70 to 151, wherein each of the radiation sources comprises a laser diode.

153. 如實施例152之微影裝置,其中每一雷射二極體經組態以發射具有約405奈米之一波長的輻射。153. The lithography apparatus of embodiment 152, wherein each of the laser diodes is configured to emit radiation having a wavelength of about 405 nm.

154. 如實施例70至153中任一者之微影裝置,其進一步包含一溫度控制器,該溫度控制器經組態以在曝光期間將該複數個輻射源維持於一實質上恆定溫度下。154. The lithography apparatus of any one of embodiments 70 to 153, further comprising a temperature controller configured to maintain the plurality of radiation sources at a substantially constant temperature during exposure .

155. 如實施例154之微影裝置,其中該控制器經組態以在曝光之前將該複數個輻射源加熱至處於或接近該實質上恆定溫度之一溫度。155. The lithography apparatus of embodiment 154, wherein the controller is configured to heat the plurality of radiation sources to a temperature at or near one of the substantially constant temperatures prior to exposure.

156. 如實施例70至155中任一者之微影裝置,其包含沿著一方向所配置之至少3個分離陣列,該等陣列中之每一者包含複數個輻射源。156. The lithography apparatus of any one of embodiments 70 to 155, comprising at least three separate arrays disposed along a direction, each of the arrays comprising a plurality of radiation sources.

157. 如實施例70至156中任一者之微影裝置,其中該複數個輻射源包含至少約1200個輻射源。157. The lithography apparatus of any one of embodiments 70 to 156, wherein the plurality of radiation sources comprises at least about 1200 radiation sources.

158. 如實施例70至157中任一者之微影裝置,其進一步包含一對準感測器,該對準感測器係用以判定該複數個輻射源中之至少一輻射源與該基板之間的對準。158. The lithography apparatus of any one of embodiments 70 to 157, further comprising an alignment sensor for determining at least one of the plurality of radiation sources and the Alignment between the substrates.

159. 如實施例70至158中任一者之微影裝置,其進一步包含一位階感測器,該位階感測器係用以判定該基板相對於該複數個光束中之至少一光束之一聚焦的一位置。159. The lithography apparatus of any one of embodiments 70 to 158, further comprising a one-step sensor for determining one of the substrate relative to at least one of the plurality of beams A position of focus.

160. 如實施例158或159之微影裝置,其進一步包含一控制器,該控制器經組態以基於對準感測器結果及/或位階感測器結果而更改該圖案。160. The lithography apparatus of embodiment 158 or 159, further comprising a controller configured to modify the pattern based on aligning sensor results and/or level sensor results.

161. 如實施例70至160中任一者之微影裝置,其進一步包含一控制器,該控制器經組態以基於該複數個輻射源中之至少一輻射源之一溫度的一量測或與該複數個輻射源中之至少一輻射源相關聯之一溫度的一量測而更改該圖案。161. The lithography apparatus of any one of embodiments 70 to 160, further comprising a controller configured to measure a temperature based on a temperature of one of the plurality of radiation sources The pattern is altered by a measurement of a temperature associated with at least one of the plurality of radiation sources.

162. 如實施例70至161中任一者之微影裝置,其進一步包含一感測器,該感測器係用以量測已或待藉由該複數個輻射源中之至少一輻射源透射朝向該基板之輻射的一特性。162. The lithography apparatus of any one of embodiments 70 to 161, further comprising a sensor for measuring at least one of the plurality of radiation sources that have been or are to be utilized by the plurality of radiation sources A property that transmits radiation toward the substrate.

163. 一種微影裝置,其包含:複數個個別可控制輻射源,該複數個個別可控制輻射源經組態以提供根據一所要圖案所調變之複數個光束;一透鏡陣列,該透鏡陣列包含複數個小透鏡;及一基板固持器,該基板固持器經建構以固持一基板,其中在使用期間,除了該透鏡陣列以外,在該複數個輻射源與該基板之間不存在其他光學器件。163. A lithography apparatus comprising: a plurality of individually controllable radiation sources configured to provide a plurality of beams modulated according to a desired pattern; a lens array, the lens array A plurality of lenslets are included; and a substrate holder configured to hold a substrate, wherein during use, in addition to the lens array, there are no other optical devices between the plurality of radiation sources and the substrate .

164. 一種可程式化圖案化元件,其包含:一基板,在該基板上具有在至少一方向上隔開之一輻射發射二極體陣列;及一透鏡陣列,該透鏡陣列處於該等輻射發射二極體之一輻射下游側上。164. A programmable patterning element, comprising: a substrate having an array of radiation emitting diodes spaced apart in at least one direction; and a lens array in which the radiation array is One of the polar bodies radiates on the downstream side.

165. 如實施例164之可程式化圖案化元件,其中該透鏡陣列包含具有複數個微透鏡之一微透鏡陣列,該等微透鏡之數目對應於輻射發射二極體之數目,且經定位以將藉由該等輻射發射二極體中之各別輻射發射二極體選擇性地傳遞之輻射聚焦成一微光點陣列。165. The programmable patterning element of embodiment 164, wherein the lens array comprises a microlens array having a plurality of microlenses, the number of the microlenses corresponding to the number of radiation emitting diodes, and being positioned The radiation selectively transmitted by the respective radiation emitting diodes in the radiation emitting diodes is focused into a micro spot array.

166. 如實施例164或165之可程式化圖案化元件,其中該等輻射發射二極體係在至少兩個正交方向上隔開。166. The programmable patterning element of embodiment 164 or 165, wherein the radiation emitting dipole systems are spaced apart in at least two orthogonal directions.

167. 如實施例164至166中任一者之可程式化圖案化元件,其中該等輻射發射二極體嵌入於一低熱導率材料中。167. The programmable patterning element of any one of embodiments 164 to 166, wherein the radiation emitting diodes are embedded in a low thermal conductivity material.

168. 一種元件製造方法,其包含:使用複數個個別可控制輻射源將根據一所要圖案所調變之複數個光束提供朝向一基板之一曝光區域;移動該複數個輻射源中之至少一者,同時提供該複數個光束,使得僅少於該複數個輻射源之全部的輻射源可在任一時間曝光該曝光區域;及將該複數個光束投影至該基板上。168. A method of fabricating a component, comprising: using a plurality of individually controllable radiation sources to provide a plurality of beams modulated according to a desired pattern toward an exposed region of a substrate; moving at least one of the plurality of radiation sources Providing the plurality of beams simultaneously such that only less than all of the plurality of sources of radiation can expose the exposed region at any one time; and projecting the plurality of beams onto the substrate.

169. 一種元件製造方法,其包含:使用複數個個別可控制輻射源來提供根據一所要圖案所調變之複數個光束;使該複數個輻射源中之至少一者移動於其發射輻射之一部位與其不發射輻射之一部位之間;及將該複數個光束投影至一基板上。169. A method of fabricating a component, comprising: using a plurality of individually controllable radiation sources to provide a plurality of beams modulated according to a desired pattern; moving at least one of the plurality of radiation sources to one of its emitted radiation Between the portion and a portion of the radiation that is not emitted; and projecting the plurality of beams onto a substrate.

170. 一種元件製造方法,其包含:使用複數個個別可控制輻射源來提供根據一所要圖案所調變之一光束;及使用僅一透鏡陣列將來自該複數個個別可控制輻射源之該經調變光束投影至一基板。170. A method of fabricating a component, comprising: using a plurality of individually controllable radiation sources to provide a beam modulated according to a desired pattern; and using the lens array to extract the plurality of individually controllable radiation sources from the plurality of individually controllable radiation sources The modulated beam is projected onto a substrate.

171. 一種元件製造方法,其包含:使用複數個個別可控制輻射源來提供根據一所要圖案所調變之複數個電磁輻射光束;在曝光一曝光區域期間相對於該曝光區域移動該複數個輻射源中之至少一輻射源,使得來自該至少一輻射源之輻射同時鄰接於或重疊於來自該複數個輻射源中之至少一另一輻射源的輻射;及將該複數個光束投影至一基板上。171. A method of fabricating a component, comprising: using a plurality of individually controllable radiation sources to provide a plurality of beams of electromagnetic radiation modulated according to a desired pattern; and moving the plurality of radiation relative to the exposure region during exposure of an exposure region At least one source of radiation, such that radiation from the at least one source simultaneously abuts or overlaps radiation from at least one other source of the plurality of sources; and projects the plurality of beams onto a substrate on.

172. 如實施例168至171中任一者之方法,其中該移動包含圍繞實質上平行於該複數個光束之一傳播方向的一軸線旋轉至少一輻射源。172. The method of any one of embodiments 168 to 171, wherein the moving comprises rotating the at least one radiation source about an axis substantially parallel to a direction of propagation of the plurality of beams.

173. 如實施例168至172中任一者之方法,其中該移動包含在橫向於該複數個光束之一傳播方向的一方向上平移至少一輻射源。173. The method of any one of embodiments 168 to 172, wherein the moving comprises translating at least one radiation source in a direction transverse to a direction of propagation of one of the plurality of beams.

174. 如實施例168至173中任一者之方法,其包含藉由使用一光束偏轉器來移動該複數個光束。174. The method of any one of embodiments 168 to 173, comprising moving the plurality of beams by using a beam deflector.

175. 如實施例174之方法,其中該光束偏轉器係選自由鏡面、稜鏡或聲光調變器組成之群組。175. The method of embodiment 174, wherein the beam deflector is selected from the group consisting of a mirror, a cymbal or an acousto-optic modulator.

176. 如實施例174之方法,其中該光束偏轉器包含一多邊形。176. The method of embodiment 174, wherein the beam deflector comprises a polygon.

177. 如實施例174之方法,其中該光束偏轉器經組態以振動。177. The method of embodiment 174, wherein the beam deflector is configured to vibrate.

178. 如實施例174之方法,其中該光束偏轉器經組態以旋轉。178. The method of embodiment 174, wherein the beam deflector is configured to rotate.

179. 如實施例168至178中任一者之方法,其包含在提供該複數個光束所沿著之一方向上移動該基板。179. The method of any one of embodiments 168 to 178, comprising moving the substrate in a direction along which the plurality of beams are provided.

180. 如實施例179之方法,其中該基板之該移動為一旋轉。180. The method of embodiment 179, wherein the movement of the substrate is a rotation.

181. 如實施例168至180中任一者之方法,其包含一起移動該複數個輻射源。181. The method of any one of embodiments 168 to 180, comprising moving the plurality of radiation sources together.

182. 如實施例168至181中任一者之方法,其中該複數個輻射源係以一圓形方式而配置。182. The method of any one of embodiments 168 to 181, wherein the plurality of radiation sources are configured in a circular manner.

183. 如實施例168至182中任一者之方法,其中該複數個輻射源配置於一板中且彼此隔開。183. The method of any one of embodiments 168 to 182, wherein the plurality of radiation sources are disposed in a plate and spaced apart from each other.

184. 如實施例168至183中任一者之方法,其中該投影包含使用一透鏡陣列將該等光束中之每一者的一影像形成至該基板上。184. The method of any one of embodiments 168 to 183, wherein the projecting comprises forming an image of each of the beams of light onto the substrate using a lens array.

185. 如實施例168至184中任一者之方法,其中該投影包含使用基本上僅一透鏡陣列將該等光束中之每一者的一影像形成至該基板上。185. The method of any one of embodiments 168 to 184, wherein the projecting comprises forming an image of each of the beams of light onto the substrate using substantially only one lens array.

186. 如實施例168至185中任一者之方法,其中該等輻射源中之每一者包含一雷射二極體。186. The method of any one of embodiments 168 to 185, wherein each of the sources of radiation comprises a laser diode.

187. 如實施例186之方法,其中每一雷射二極體經組態以發射具有約405奈米之一波長的輻射。187. The method of embodiment 186, wherein each of the laser diodes is configured to emit radiation having a wavelength of about 405 nm.

188. 一種平板顯示器,其係根據如實施例168至187中任一者之方法而製造。188. A flat panel display manufactured according to the method of any one of embodiments 168 to 187.

189. 一種積體電路元件,其係根據如實施例168至187中任一者之方法而製造。189. An integrated circuit component manufactured according to the method of any one of embodiments 168 to 187.

190. 一種輻射系統,其包含:複數個可移動輻射陣列,每一輻射陣列包含複數個個別可控制輻射源,該複數個個別可控制輻射源經組態以提供根據一所要圖案所調變的複數個光束;及一馬達,該馬達經組態以移動該等輻射陣列中之每一者。190. A radiation system comprising: a plurality of movable radiation arrays, each radiation array comprising a plurality of individually controllable radiation sources configured to provide modulation according to a desired pattern a plurality of beams; and a motor configured to move each of the arrays of radiation.

191. 如實施例190之輻射系統,其中該馬達經組態以圍繞實質上平行於該複數個光束之一傳播方向的一軸線旋轉該等輻射陣列中之每一者。191. The radiation system of embodiment 190, wherein the motor is configured to rotate each of the arrays of radiation about an axis substantially parallel to a direction of propagation of one of the plurality of beams.

192. 如實施例190或191之輻射系統,其中該馬達經組態以在橫向於該複數個光束之一傳播方向的一方向上平移該等輻射陣列中之每一者。192. The radiation system of embodiment 190 or 191, wherein the motor is configured to translate each of the arrays of radiation in a direction transverse to a direction of propagation of one of the plurality of beams.

193. 如實施例190至192中任一者之輻射系統,其進一步包含一光束偏轉器,該光束偏轉器經組態以移動該複數個光束。193. The radiation system of any one of embodiments 190 to 192, further comprising a beam deflector configured to move the plurality of beams.

194. 如實施例193之輻射系統,其中該光束偏轉器係選自由鏡面、稜鏡或聲光調變器組成之群組。194. The radiation system of embodiment 193, wherein the beam deflector is selected from the group consisting of a mirror, a chirp, or an acousto-optic modulator.

195. 如實施例193之輻射系統,其中該光束偏轉器包含一多邊形。195. The radiation system of embodiment 193, wherein the beam deflector comprises a polygon.

196. 如實施例193之輻射系統,其中該光束偏轉器經組態以振動。196. The radiation system of embodiment 193, wherein the beam deflector is configured to vibrate.

197. 如實施例193之輻射系統,其中該光束偏轉器經組態以旋轉。197. The radiation system of embodiment 193, wherein the beam deflector is configured to rotate.

198. 如實施例190至197中任一者之輻射系統,其中該等輻射陣列中之每一者的該複數個輻射源係可一起移動的。198. The radiation system of any one of embodiments 190 to 197, wherein the plurality of radiation sources of each of the radiation arrays are moveable together.

199. 如實施例190至198中任一者之輻射系統,其中該等輻射陣列中之每一者的該複數個輻射源係以一圓形方式而配置。199. The radiation system of any one of embodiments 190 to 198, wherein the plurality of radiation sources of each of the radiation arrays are configured in a circular manner.

200. 如實施例190至199中任一者之輻射系統,其中該等輻射陣列中之每一者的該複數個輻射源配置於一板中且彼此隔開。The radiation system of any one of embodiments 190 to 199, wherein the plurality of radiation sources of each of the radiation arrays are disposed in a plate and spaced apart from one another.

201. 如實施例190至200中任一者之輻射系統,其進一步包含一透鏡陣列,該透鏡陣列係與該等輻射陣列中之每一者相關聯。The radiation system of any one of embodiments 190 to 200, further comprising an array of lenses associated with each of the arrays of radiation.

202. 如實施例201之輻射系統,其中該等輻射陣列中之每一者的該複數個輻射源中之每一者係與一透鏡陣列之一透鏡相關聯,該透鏡陣列係與該輻射陣列相關聯。202. The radiation system of embodiment 201, wherein each of the plurality of radiation sources of each of the radiation arrays is associated with a lens of a lens array, the lens array and the radiation array Associated.

203. 如實施例190至202中任一者之輻射系統,其中該等輻射陣列中之每一者的該複數個輻射源中之每一者包含一雷射二極體。203. The radiation system of any one of embodiments 190 to 202, wherein each of the plurality of radiation sources of each of the radiation arrays comprises a laser diode.

204. 如實施例203之輻射系統,其中每一雷射二極體經組態以發射具有約405奈米之一波長的輻射。204. The radiation system of embodiment 203, wherein each of the laser diodes is configured to emit radiation having a wavelength of about 405 nanometers.

205. 一種用於將一基板曝光至輻射之微影裝置,該裝置包含一可程式化圖案化元件,該可程式化圖案化元件具有100個至25000個自發射個別可定址器件。205. A lithography apparatus for exposing a substrate to radiation, the apparatus comprising a programmable patterning element having from 100 to 25,000 self-emissive individual addressable devices.

206. 如實施例205之微影裝置,其包含至少400個自發射個別可定址器件。206. The lithography apparatus of embodiment 205, comprising at least 400 self-emissive individual addressable devices.

207. 如實施例205之微影裝置,其包含至少1000個自發射個別可定址器件。207. The lithography apparatus of embodiment 205, comprising at least 1000 self-emission individual addressable devices.

208. 如實施例205至207中任一者之微影裝置,其包含10000個以下自發射個別可定址器件。208. A lithography apparatus according to any of embodiments 205 to 207, comprising 10,000 or less self-emission individual addressable devices.

209. 如實施例205至207中任一者之微影裝置,其包含5000個以下自發射個別可定址器件。209. A lithography apparatus according to any of embodiments 205 to 207, comprising 5,000 or less self-emission individual addressable devices.

210. 如實施例205至209中任一者之微影裝置,其中該等自發射個別可定址器件為雷射二極體。210. The lithography apparatus of any one of embodiments 205 to 209, wherein the self-emission individual addressable devices are laser diodes.

211. 如實施例205至209中任一者之微影裝置,其中該等自發射個別可定址器件經配置以在該基板上具有選自0.1微米至3微米之範圍的一光點大小。The lithography apparatus of any one of embodiments 205 to 209, wherein the self-emissive individual addressable devices are configured to have a spot size on the substrate selected from the range of 0.1 micron to 3 microns.

212. 如實施例205至209中任一者之微影裝置,其中該等自發射個別可定址器件經配置以在該基板上具有約1微米之一光點大小。The lithography apparatus of any one of embodiments 205 to 209, wherein the self-emission individual addressable devices are configured to have a spot size of about 1 micron on the substrate.

213. 一種用於將一基板曝光至輻射之微影裝置,該裝置包含一可程式化圖案化元件,該可程式化圖案化元件在經正規化至10公分之一曝光場長度的情況下具有100個至25000個自發射個別可定址器件。213. A lithography apparatus for exposing a substrate to radiation, the apparatus comprising a programmable patterning element having a normalized to 10 cm exposure field length 100 to 25,000 self-emission individual addressable devices.

214. 如實施例213之微影裝置,其包含至少400個自發射個別可定址器件。214. The lithography apparatus of embodiment 213, comprising at least 400 self-emissive individual addressable devices.

215. 如實施例213之微影裝置,其包含至少1000個自發射個別可定址器件。215. The lithography apparatus of embodiment 213, comprising at least 1000 self-emission individual addressable devices.

216. 如實施例213至215中任一者之微影裝置,其包含10000個以下自發射個別可定址器件。216. A lithography apparatus according to any of embodiments 213 to 215, comprising 10,000 or less self-emission individual addressable devices.

217. 如實施例213至215中任一者之微影裝置,其包含5000個以下自發射個別可定址器件。217. A lithography apparatus according to any of embodiments 213 to 215, comprising 5,000 or less self-emission individual addressable devices.

218. 如實施例213至217中任一者之微影裝置,其中該等自發射個別可定址器件為雷射二極體。218. The lithography apparatus of any one of embodiments 213 to 217, wherein the self-emission individual addressable devices are laser diodes.

219. 如實施例213至217中任一者之微影裝置,其中該等自發射個別可定址器件經配置以在該基板上具有選自0.1微米至3微米之範圍的一光點大小。</ RTI> The lithography apparatus of any one of embodiments 213 to 217, wherein the self-emissive individual addressable devices are configured to have a spot size on the substrate selected from the range of 0.1 micron to 3 microns.

220. 如實施例213至217中任一者之微影裝置,其中該等自發射個別可定址器件經配置以在該基板上具有約1微米之一光點大小。The lithography apparatus of any one of embodiments 213 to 217, wherein the self-emissive individual addressable devices are configured to have a spot size of about 1 micron on the substrate.

221. 一種包含一可旋轉圓盤之可程式化圖案化元件,該圓盤具有100個至25000個自發射個別可定址器件。221. A programmable patterning element comprising a rotatable disk having from 100 to 25,000 self-emissive individually addressable devices.

222. 如實施例221之可程式化圖案化元件,其中該圓盤包含至少400個自發射個別可定址器件。222. The programmable patterning element of embodiment 221, wherein the disk comprises at least 400 self-emissive individually addressable devices.

223. 如實施例221之可程式化圖案化元件,其中該圓盤包含至少1000個自發射個別可定址器件。223. The programmable patterning element of embodiment 221, wherein the disk comprises at least 1000 self-emissive individual addressable devices.

224. 如實施例221至223中任一者之可程式化圖案化元件,其中該圓盤包含10000個以下自發射個別可定址器件。224. The programmable patterning element of any one of embodiments 221 to 223, wherein the disk comprises 10,000 or less self-emission individual addressable devices.

225. 如實施例221至223中任一者之可程式化圖案化元件,其中該圓盤包含5000個以下自發射個別可定址器件。225. The programmable patterning element of any one of embodiments 221 to 223, wherein the disk comprises 5,000 or less self-emission individual addressable devices.

226. 如實施例221至225中任一者之可程式化圖案化元件,其中該等自發射個別可定址器件為雷射二極體。226. The programmable patterning element of any one of embodiments 221 to 225, wherein the self-emissive individual addressable devices are laser diodes.

227. 一種本發明中之一或多者之用途,其係用於平板顯示器之製造中。227. Use of one or more of the present invention in the manufacture of a flat panel display.

228. 一種本發明中之一或多者之用途,其係用於積體電路封裝中。228. Use of one or more of the present invention in an integrated circuit package.

229. 一種微影方法,其包含使用具有自發射器件之一可程式化圖案化元件將一基板曝光至輻射,其中在該曝光期間,用以操作該等自發射器件的該可程式化圖案化元件之功率消耗小於10千瓦特。229. A lithography method comprising exposing a substrate to radiation using a programmable patterning element having a self-emissive device, wherein the programmable patterning for operating the self-emissive device during the exposure The power consumption of the components is less than 10 kW.

230. 如實施例229之方法,其中該功率消耗小於5千瓦特。230. The method of embodiment 229, wherein the power consumption is less than 5 kilowatts.

231. 如實施例229或230之方法,其中該功率消耗為至少100毫瓦特。231. The method of embodiment 229 or 230, wherein the power consumption is at least 100 milliwatts.

232. 如實施例229至231中任一者之方法,其中該等自發射器件為雷射二極體。232. The method of any one of embodiments 229 to 231, wherein the self-emissive devices are laser diodes.

233. 如實施例232之方法,其中該等雷射二極體為藍紫色雷射二極體。233. The method of embodiment 232, wherein the laser diodes are blue-violet laser diodes.

234. 一種微影方法,其包含使用具有自發射器件之一可程式化圖案化元件將一基板曝光至輻射,其中當在使用中時,每發射器件之光學輸出為至少1毫瓦特。234. A method of lithography comprising exposing a substrate to radiation using a programmable patterning element having a self-emissive device, wherein when in use, the optical output of each of the emitting devices is at least 1 milliwatt.

235. 如實施例234之方法,其中該光學輸出為至少10毫瓦特。235. The method of embodiment 234, wherein the optical output is at least 10 milliwatts.

236. 如實施例234之方法,其中該光學輸出為至少50毫瓦特。236. The method of embodiment 234, wherein the optical output is at least 50 milliwatts.

237. 如實施例234至236中任一者之方法,其中該光學輸出小於200毫瓦特。237. The method of any one of embodiments 234 to 236, wherein the optical output is less than 200 milliwatts.

238. 如實施例234至237中任一者之方法,其中該等自發射器件為雷射二極體。238. The method of any one of embodiments 234 to 237, wherein the self-emissive devices are laser diodes.

239. 如實施例238之方法,其中該等雷射二極體為藍紫色雷射二極體。239. The method of embodiment 238, wherein the laser diodes are blue-violet laser diodes.

240. 如實施例234之方法,其中該光學輸出大於5毫瓦特,但小於或等於20毫瓦特。240. The method of embodiment 234, wherein the optical output is greater than 5 milliwatts but less than or equal to 20 milliwatts.

241. 如實施例234之方法,其中該光學輸出大於5毫瓦特,但小於或等於30毫瓦特。241. The method of embodiment 234, wherein the optical output is greater than 5 milliwatts but less than or equal to 30 milliwatts.

242. 如實施例234之方法,其中該光學輸出大於5毫瓦特,但小於或等於40毫瓦特。242. The method of embodiment 234, wherein the optical output is greater than 5 milliwatts but less than or equal to 40 milliwatts.

243. 如實施例234至242中任一者之方法,其中該等自發射器件係在單模式中操作。243. The method of any one of embodiments 234 to 242, wherein the self-emissive devices operate in a single mode.

244. 一種微影裝置,其包含:一可程式化圖案化元件,該可程式化圖案化元件具有自發射器件;及一可旋轉框架,該可旋轉框架具有用於自該等自發射器件接收輻射之光學器件,該等光學器件為折射光學器件。244. A lithography apparatus comprising: a programmable patterning element having a self-emissive device; and a rotatable frame having a means for receiving from the self-emissive device Radiation optics, which are refractive optics.

245. 一種微影裝置,其包含:一可程式化圖案化元件,該可程式化圖案化元件具有自發射器件;及一可旋轉框架,該可旋轉框架具有用於自該等自發射器件接收輻射之光學器件,該可旋轉框架不具有用以自該等自發射器件中之任一者或全部接收輻射的反射光學器件。245. A lithography apparatus comprising: a programmable patterning element having a self-emissive device; and a rotatable frame having a means for receiving from the self-emissive device A radiation optic that does not have reflective optics for receiving radiation from any or all of the self-emissive devices.

246. 一種微影裝置,其包含:一可程式化圖案化元件;及一可旋轉框架,該可旋轉框架包含具有光學器件之一板,具有光學器件之該板的一表面係平坦的。246. A lithography apparatus comprising: a programmable patterning element; and a rotatable frame comprising a plate having an optical device, a surface of the plate having the optical device being flat.

247. 一種本發明中之一或多者之用途,其係用於平板顯示器之製造中。247. Use of one or more of the present invention in the manufacture of flat panel displays.

248. 一種本發明中之一或多者之用途,其係用於積體電路封裝中。248. Use of one or more of the present invention in an integrated circuit package.

249. 一種平板顯示器,其係根據該等方法中之任一者而製造。249. A flat panel display manufactured according to any of the methods.

250. 一種積體電路元件,其係根據該等方法中之任一者而製造。250. An integrated circuit component fabricated in accordance with any of the methods.

251. 一種裝置,其包含:一光學圓柱,該光學圓柱能夠在一基板之一目標部分上產生一圖案,該光學圓柱包含一投影系統,該投影系統經組態以將一光束投影至該基板上,該投影系統包含一可旋轉框架及藉由該可旋轉框架支撐之複數個透鏡;一致動器,該致動器經組態以旋轉該框架;及一可調整件,該可調整件用以相對於該可旋轉框架調整該等透鏡中之至少一者之一位置。251. A device comprising: an optical cylinder capable of producing a pattern on a target portion of a substrate, the optical cylinder comprising a projection system configured to project a beam onto the substrate The projection system includes a rotatable frame and a plurality of lenses supported by the rotatable frame; an actuator configured to rotate the frame; and an adjustable member for the adjustable member Adjusting a position of at least one of the lenses relative to the rotatable frame.

252. 如實施例251之裝置,其中每一透鏡係藉由一對應可調整件而附接至該可旋轉框架。252. The device of embodiment 251, wherein each lens is attached to the rotatable frame by a corresponding adjustable member.

253. 如實施例251或252之裝置,其中該可調整件包含一楔狀物部分,該楔狀物部分具有在該可旋轉框架之一旋轉軸線之一方向上所見的一楔狀物形狀。253. The device of embodiment 251 or 252, wherein the adjustable member comprises a wedge portion having a wedge shape as seen in one of the axes of rotation of the rotatable frame.

254. 如實施例253之裝置,其中該可調整件進一步包含:一基座部分,該基座部分插入於該楔狀物部分與該可旋轉框架之間;及一連接部分,該楔狀物部分插入於該基座部分與該連接部分之間。254. The device of embodiment 253, wherein the adjustable member further comprises: a base portion interposed between the wedge portion and the rotatable frame; and a connecting portion, the wedge A portion is interposed between the base portion and the connecting portion.

255. 如實施例254之裝置,其中該楔狀物部分包含一通孔,且用以經由該楔狀物部分將該連接部分附接至該基座部分之一互連螺釘延伸通過該楔狀物部分之該通孔。255. The device of embodiment 254, wherein the wedge portion comprises a through hole and for attaching the connecting portion to the one of the base portion via the wedge portion, the interconnecting screw extends through the wedge Part of the through hole.

256. 如實施例255之裝置,其中該互連螺釘之一硬度低於該基座部分及該連接部分之一硬度。256. The device of embodiment 255, wherein one of the interconnecting screws has a lower hardness than the one of the base portion and the connecting portion.

257. 如實施例254至256中任一者之裝置,其中該連接部分包含:一狹縮部,該狹縮部處於垂直於該可旋轉框架之徑向方向的一方向上;及一推挽式元件,該推挽式元件在該徑向方向上延伸遍及該狹縮部。257. The device of any one of embodiments 254 to 256, wherein the connecting portion comprises: a narrowing portion in a direction perpendicular to a radial direction of the rotatable frame; and a push-pull type An element that extends in the radial direction throughout the constriction.

258. 如實施例251至257中任一者之裝置,其中該框架之旋轉移動大於500 RPM、大於1000 RPM、大於2000 RPM或大於4000 RPM。258. The device of any one of embodiments 251 to 257, wherein the rotational movement of the frame is greater than 500 RPM, greater than 1000 RPM, greater than 2000 RPM, or greater than 4000 RPM.

259. 如實施例251至258中任一者之裝置,其進一步包含至少一自發射對比元件,該至少一自發射對比元件經組態以發射該光束。259. The device of any one of embodiments 251 to 258, further comprising at least one self-emissive contrast element configured to emit the light beam.

260. 一種元件製造方法,其包含:藉由使用一投影系統將一輻射光束投影至基板上而在該基板之一目標部分上產生一圖案,該投影系統具有一可旋轉框架及藉由該可旋轉框架支撐之複數個透鏡;及藉由旋轉該可旋轉框架而相對於該基板移動該等透鏡,其中藉由一可調整件而相對於該可旋轉框架調整該等透鏡中之至少一者之一位置。260. A method of fabricating a component, comprising: generating a pattern on a target portion of the substrate by projecting a radiation beam onto the substrate using a projection system, the projection system having a rotatable frame and by the Rotating the plurality of lenses supported by the frame; and moving the lenses relative to the substrate by rotating the rotatable frame, wherein at least one of the lenses is adjusted relative to the rotatable frame by an adjustable member a location.

261. 如實施例260之方法,其中針對該等透鏡中之該至少一者執行一聚焦調整,該聚焦調整包含:將該可調整件安裝至該可旋轉框架;及調整在該可旋轉框架之一徑向方向上延伸遍及該可調整件之一狹縮部的一推挽式元件,該狹縮部處於垂直於該可旋轉框架之該徑向方向的一方向上。261. The method of embodiment 260, wherein a focus adjustment is performed for the at least one of the lenses, the focus adjustment comprising: mounting the adjustable member to the rotatable frame; and adjusting the rotatable frame A push-pull element extending in a radial direction throughout a narrowing of the adjustable member, the narrowing being in a direction perpendicular to the radial direction of the rotatable frame.

262. 如實施例260或261之方法,其中該可調整件包含一楔狀物部分及一互連螺釘,該互連螺釘在該可旋轉框架之該徑向方向上延伸通過該楔狀物部分之一通孔,該方法包含:調整該楔狀物部分之一位置以在該徑向方向上定位一對應透鏡;及拉緊該互連螺釘以在該徑向方向上調整該透鏡之該位置。262. The method of embodiment 260 or 261, wherein the adjustable member comprises a wedge portion and an interconnecting screw extending through the wedge portion in the radial direction of the rotatable frame A through hole, the method comprising: adjusting a position of the wedge portion to position a corresponding lens in the radial direction; and tensioning the interconnecting screw to adjust the position of the lens in the radial direction.

263. 如實施例260至262中任一者之方法,其進一步包含自至少一自發射對比元件發射該輻射光束。263. The method of any one of embodiments 260 to 262, further comprising emitting the radiation beam from at least one self-emissive contrast element.

264. 一種裝置,其包含:複數個透鏡或一個別可控制器件陣列,該複數個透鏡或該個別可控制器件陣列係藉由一可旋轉框架支撐;一致動器,該致動器經組態以旋轉該可旋轉框架;及一可調整件,該可調整件用以相對於該可旋轉框架調整該等透鏡中之至少一者及/或該等個別可控制器件中之至少一者之一位置。264. An apparatus comprising: a plurality of lenses or an array of other controllable devices supported by a rotatable frame; an actuator configured To rotate the rotatable frame; and an adjustable member for adjusting at least one of the lenses and/or at least one of the individually controllable devices relative to the rotatable frame position.

265. 一種可調整件,其用以相對於一可旋轉框架調整複數個透鏡中之至少一透鏡或一個別可控制器件陣列中之一個別可控制器件之一位置,該可旋轉框架支撐該複數個透鏡或該個別可控制器件陣列。265. An adjustable member for adjusting a position of at least one of a plurality of lenses or an individually controllable device in an array of controllable devices relative to a rotatable frame, the rotatable frame supporting the plurality A lens or an array of individual controllable devices.

266. 一種裝置,其包含:一光學圓柱,該光學圓柱能夠在一基板之一目標部分上產生一圖案,該光學圓柱包含複數個個別可控制器件,該複數個個別可控制器件經組態以發射一光束,該複數個個別可控制器件係藉由一可移動框架支撐;一致動器,該致動器經組態以移動該框架;及一可調整件,該可調整件用以相對於該可移動框架調整該等個別可控制器件中之至少一者之一位置。266. A device comprising: an optical cylinder capable of producing a pattern on a target portion of a substrate, the optical cylinder comprising a plurality of individually controllable devices, the plurality of individually controllable devices being configured Transmitting a light beam, the plurality of individually controllable devices being supported by a movable frame; an actuator configured to move the frame; and an adjustable member for opposing the relative The movable frame adjusts a position of at least one of the individually controllable devices.

267. 如實施例251、252或267之裝置,其中該可調整件包含一調整塊狀物部分,該調整塊狀物部分可在實質上平行於該框架之一旋轉軸線的一方向上調整於適當位置中。267. The device of embodiment 251, 252 or 267, wherein the adjustable member comprises an adjustment block portion that is adjustable in a direction substantially parallel to one of the axes of rotation of the frame. In the location.

268. 如實施例251、252或267之裝置,其中該可調整件包含:一基座部分,該可調整件係藉由該基座部分而安裝至該框架;一平衡塊狀物,該平衡塊狀物固持該等透鏡中之至少一者;及一連接結構,該連接結構用以將該平衡塊狀物連接至該基座部分,其中該平衡塊狀物與該至少一透鏡之一總成相對於垂直於該框架之一旋轉軸線的一平面實質上平衡。268. The device of embodiment 251, 252 or 267, wherein the adjustable member comprises: a base portion mounted to the frame by the base portion; a balance mass, the balance Blocking the at least one of the lenses; and a connecting structure for attaching the balancing mass to the base portion, wherein the balancing mass and the at least one lens are total It is substantially balanced with respect to a plane that is perpendicular to one of the axes of rotation of the frame.

269. 如實施例268之裝置,其中該平面相交於該連接結構。269. The device of embodiment 268, wherein the plane intersects the connection structure.

270. 如實施例268或269之裝置,其中該平衡塊狀物包含一調整塊狀物部分。270. The device of embodiment 268 or 269, wherein the balance mass comprises an adjustment block portion.

271. 如實施例268至270中任一者之裝置,其中該可調整件進一步包含一彈簧負載調整結構,該彈簧負載調整結構經組態以將一力施加於該框架與該平衡塊狀物之間。271. The device of any one of embodiments 268 to 270, wherein the adjustable member further comprises a spring load adjustment structure configured to apply a force to the frame and the balance mass between.

272. 如實施例268至271中任一者之裝置,其中該基座部分包含一調整機構,該調整機構經組態以使該基座部分之一平衡塊狀物側部分可相對於該基座部分之一框架側部分調整於適當位置中。272. The device of any one of embodiments 268 to 271, wherein the base portion includes an adjustment mechanism configured to balance a block side portion of the base portion relative to the base One of the frame side portions of the seat portion is adjusted in position.

儘管在本文中可特定地參考微影裝置在特定元件或結構(例如,積體電路或平板顯示器)之製造中之使用,但應理解,本文中所描述之微影裝置及微影方法可具有其他應用。應用包括(但不限於)製造積體電路、整合光學系統、用於磁疇記憶體之導引及偵測圖案、平板顯示器、LCD、OLED顯示器、薄膜磁頭、微機電元件(MEMS)、微光機電系統(MOEMS)、DNA晶片、封裝(例如,覆晶、重新分佈,等等)、可撓性顯示器或電子器件(該等可撓性顯示器或電子器件為可為可捲動、可彎曲(比如紙張)且保持無變形、適型的、結實的、薄及/或輕量的顯示器或電子器件,例如,可撓性塑膠顯示器),等等。又,例如,在平板顯示器中,本裝置及方法可用以輔助產生各種層,例如,薄膜電晶體層及/或彩色濾光器層。熟習此項技術者應瞭解,在此等替代應用之內容背景中,可認為本文中對術語「晶圓」或「晶粒」之任何使用分別與更通用之術語「基板」或「目標部分」同義。可在曝光之前或之後在(例如)塗佈顯影系統(例如,通常將抗蝕劑層施加至基板且顯影經曝光抗蝕劑之工具)、度量衡工具及/或檢測工具中處理本文中所提及之基板。適用時,可將本文中之揭示應用於此等及其他基板處理工具。另外,可將基板處理一次以上,(例如)以便產生多層IC,使得本文中所使用之術語「基板」亦可指代已經含有多個經處理層之基板。Although reference may be made herein specifically to the use of a lithography apparatus in the manufacture of a particular component or structure (eg, an integrated circuit or a flat panel display), it should be understood that the lithographic apparatus and lithography methods described herein may have other apps. Applications include, but are not limited to, manufacturing integrated circuits, integrated optical systems, guidance and detection patterns for magnetic domain memories, flat panel displays, LCDs, OLED displays, thin film magnetic heads, microelectromechanical components (MEMS), low light Electromechanical systems (MOEMS), DNA wafers, packages (eg, flip chip, redistribution, etc.), flexible displays or electronics (the flexible displays or electronics can be scrollable, bendable ( Such as paper) and maintain a non-deformable, conformable, strong, thin and / or lightweight display or electronic device, such as a flexible plastic display, and so on. Also, for example, in a flat panel display, the apparatus and method can be used to assist in the creation of various layers, such as thin film transistor layers and/or color filter layers. Those skilled in the art should understand that in the context of the content of such alternative applications, any use of the terms "wafer" or "die" herein may be considered as a more general term with the term "substrate" or "target portion". Synonymous. The preparations herein may be processed before or after exposure, for example, in a coating development system (eg, a tool that typically applies a layer of resist to the substrate and develops the exposed resist), a metrology tool, and/or a detection tool. And the substrate. Where applicable, the disclosure herein may be applied to such and other substrate processing tools. Additionally, the substrate can be processed more than once, for example, to produce a multilayer IC, such that the term "substrate" as used herein may also refer to a substrate that already contains multiple processed layers.

平板顯示器基板可為矩形形狀。經設計以曝光此類型之基板的微影裝置可提供覆蓋矩形基板之全寬度或覆蓋寬度之一部分(例如,寬度之一半)的曝光區域。可在曝光區域下方掃描基板,同時經由經圖案化光束而同步地掃描圖案化元件,或圖案化元件提供變化圖案。以此方式,將所要圖案之全部或部分轉印至基板。若曝光區域覆蓋基板之全寬度,則可以單次掃描來完成曝光。若曝光區域覆蓋(例如)基板之寬度之一半,則可在第一次掃描之後橫向地移動基板,且通常執行另外掃描以曝光基板之剩餘部分。The flat panel display substrate may have a rectangular shape. A lithography apparatus designed to expose a substrate of this type can provide an exposed area that covers a full width or a portion of the width of the rectangular substrate (eg, one-half of the width). The substrate can be scanned below the exposed area while simultaneously scanning the patterned elements via the patterned beam, or the patterned elements provide a varying pattern. In this way, all or part of the desired pattern is transferred to the substrate. If the exposed area covers the full width of the substrate, the exposure can be completed in a single scan. If the exposed area covers, for example, one-half the width of the substrate, the substrate can be moved laterally after the first scan, and additional scanning is typically performed to expose the remainder of the substrate.

本文中所使用之術語「圖案化元件」應被廣泛地解釋為指代可用以調變輻射光束之橫截面以便在基板(之部分)中產生圖案的任何元件。應注意,例如,若被賦予至輻射光束之圖案包括相移特徵或所謂的輔助特徵,則圖案可能不會確切地對應於基板之目標部分中的所要圖案。類似地,最終產生於基板上之圖案可能不會對應於在任一瞬間形成於個別可控制器件陣列上之圖案。在如下配置中可為此情況:其中遍及個別可控制器件陣列上之圖案及/或基板之相對位置改變期間的給定時段或給定數目次曝光而建置形成於基板之每一部分上的最終圖案。通常,產生於基板之目標部分上的圖案將對應於產生於目標部分中之元件(例如,積體電路或平板顯示器)中的特定功能層(例如,平板顯示器中之彩色濾光器層或平板顯示器中之薄膜電晶體層)。此等圖案化元件之實例包括(例如)光罩、可程式化鏡面陣列、雷射二極體陣列、發光二極體陣列、光柵光閥,及LCD陣列。圖案係憑藉電子元件(例如,電腦)可程式化之圖案化元件(例如,包含可各自調變輻射光束之部分之強度之複數個可程式化器件的圖案化元件(例如,在前句中所提及之除了光罩以外的所有元件))(包括具有藉由調變輻射光束之部分相對於輻射光束之鄰近部分之相位而將圖案賦予至輻射光束之複數個可程式化器件的電子可程式化圖案化元件)在本文中被共同地稱作「對比元件」。在一實施例中,圖案化元件包含至少10個可程式化器件,例如,至少100個可程式化器件、至少1000個可程式化器件、至少10000個可程式化器件、至少100000個可程式化器件、至少1000000個可程式化器件或至少10000000個可程式化器件。以下稍微更詳細地論述此等元件中之若干者的實施例:The term "patterned element" as used herein shall be interpreted broadly to refer to any element that can be used to modulate the cross-section of a radiation beam to produce a pattern in a portion of the substrate. It should be noted that, for example, if the pattern imparted to the radiation beam includes a phase shifting feature or a so-called auxiliary feature, the pattern may not exactly correspond to the desired pattern in the target portion of the substrate. Similarly, the pattern ultimately produced on the substrate may not correspond to the pattern formed on the array of individual controllable devices at any instant. In this configuration, it may be the case that the final formation on each portion of the substrate is established over a given period of time or a given number of exposures during pattern and/or relative positional change of the substrate on the individual controllable device array. pattern. Typically, the pattern produced on the target portion of the substrate will correspond to a particular functional layer (eg, a color filter layer or plate in a flat panel display) that is generated in an element (eg, an integrated circuit or flat panel display) in the target portion. The thin film transistor layer in the display). Examples of such patterned elements include, for example, photomasks, programmable mirror arrays, laser diode arrays, light emitting diode arrays, grating light valves, and LCD arrays. A pattern is a patterned element that can be programmed with an electronic component (eg, a computer) (eg, a patterned component that includes a plurality of programmable devices that can individually modulate the intensity of the portion of the radiation beam (eg, in the preceding sentence) All of the elements other than the reticle mentioned)) (including an electronically programmable device having a plurality of programmable devices that impart a pattern to the radiation beam by modulating the phase of the portion of the radiation beam relative to the adjacent portion of the radiation beam) The patterned elements are collectively referred to herein as "contrast elements." In one embodiment, the patterning component comprises at least 10 programmable devices, for example, at least 100 programmable devices, at least 1000 programmable devices, at least 10,000 programmable devices, at least 100,000 programmable Device, at least 1,000,000 programmable devices or at least 10,000,000 programmable devices. Embodiments of several of these elements are discussed in more detail below:

- 可程式化鏡面陣列。可程式化鏡面陣列可包含具有黏彈性控制層之矩陣可定址表面及反射表面。此裝置所隱含之基本原理在於(例如):反射表面之經定址區域將入射輻射反射為繞射輻射,而未經定址區域將入射輻射反射為非繞射輻射。在使用適當空間濾光器的情況下,可將非繞射輻射濾出反射光束,從而僅使繞射輻射到達基板。以此方式,光束根據矩陣可定址表面之定址圖案而變得圖案化。應瞭解,作為一替代例,濾光器可濾出繞射輻射,從而使非繞射輻射到達基板。亦可以對應方式使用繞射光學MEMS元件陣列。繞射光學MEMS元件可包含複數個反射帶,該等反射帶可相對於彼此而變形以形成將入射輻射反射為繞射輻射之光柵。可程式化鏡面陣列之另外實施例使用微小鏡面之矩陣配置,該等微小鏡面中之每一鏡面可藉由施加適當局域化電場或藉由使用壓電致動構件而圍繞一軸線個別地傾斜。傾斜度界定每一鏡面之狀態。當器件無缺陷時,鏡面可藉由來自控制器之適當控制信號進行控制。每一無缺陷器件係可控制的,以採用一系列狀態中之任一者,以便調整經投影輻射圖案中之其對應像素的強度。再次,鏡面係矩陣可定址的,使得經定址鏡面在與未經定址鏡面不同之方向上反射入射輻射光束;以此方式,反射光束可根據矩陣可定址鏡面之定址圖案而圖案化。可使用適當電子構件來執行所需矩陣定址。可(例如)自全文以引用之方式併入本文中的美國專利第US 5,296,891號及第US 5,523,193號以及PCT專利申請公開案第WO 98/38597號及第WO 98/33096號搜集關於此處所提及之鏡面陣列的更多資訊。- Programmable mirror array. The programmable mirror array can include a matrix addressable surface having a viscoelastic control layer and a reflective surface. The underlying principle implied by this device is, for example, that the addressed region of the reflective surface reflects incident radiation as diffracted radiation, while the unaddressed region reflects incident radiation as non-diffracted radiation. In the case of a suitable spatial filter, the non-diffracting radiation can be filtered out of the reflected beam such that only the diffracted radiation reaches the substrate. In this way, the beam becomes patterned according to the addressing pattern of the matrix addressable surface. It will be appreciated that as an alternative, the filter may filter out the diffracted radiation such that the non-diffracted radiation reaches the substrate. A diffractive optical MEMS element array can also be used in a corresponding manner. The diffractive optical MEMS element can include a plurality of reflective strips that are deformable relative to one another to form a grating that reflects incident radiation as diffracted radiation. A further embodiment of the programmable mirror array uses a matrix configuration of tiny mirrors, each of which can be individually tilted about an axis by applying an appropriate localized electric field or by using a piezoelectric actuator member . The slope defines the state of each mirror. When the device is free of defects, the mirror can be controlled by appropriate control signals from the controller. Each defect free device is controllable to employ any of a range of states to adjust the intensity of its corresponding pixel in the projected radiation pattern. Again, the mirror matrix can be addressed such that the addressed mirror reflects the incident radiation beam in a different direction than the unaddressed mirror; in this manner, the reflected beam can be patterned according to the addressing pattern of the matrix addressable mirror. The appropriate electronic components can be used to perform the required matrix addressing. U.S. Patent Nos. 5,296,891 and 5,523,193, the disclosures of which are hereby incorporated by reference in its entirety by reference in the entire entire disclosures in More information on the mirror array mentioned.

- 可程式化LCD陣列。全文以引用之方式併入本文中的美國專利第US 5,229,872號中給出此構造之實例。- Programmable LCD array. An example of such a configuration is given in U.S. Patent No. 5,229,872, which is incorporated herein by reference.

微影裝置可包含一或多個圖案化元件,例如,一或多個對比元件。舉例而言,微影裝置可具有複數個個別可控制器件陣列,每一者彼此獨立地被控制。在此配置中,個別可控制器件陣列中之一些或全部可具有共同照明系統(或照明系統之部分)、用於個別可控制器件陣列之共同支撐結構及/或共同投影系統(或投影系統之部分)中的至少一者。The lithography apparatus can include one or more patterned elements, such as one or more contrast elements. For example, a lithography apparatus can have a plurality of individual controllable device arrays, each controlled independently of each other. In this configuration, some or all of the individual controllable device arrays may have a common illumination system (or part of a lighting system), a common support structure for an individual controllable device array, and/or a common projection system (or projection system) At least one of the parts).

應瞭解,在(例如)使用特徵之預偏置、光學近接式校正特徵、相位變化技術及/或多次曝光技術時,「經顯示」於個別可控制器件陣列上之圖案可實質上不同於最終轉印至基板之層或基板上之層的圖案。類似地,最終產生於基板上之圖案可能不會對應於在任一瞬間形成於個別可控制器件陣列上之圖案。在如下配置中可為此情況:其中遍及個別可控制器件陣列上之圖案及/或基板之相對位置改變期間的給定時段或給定數目次曝光而建置形成於基板之每一部分上的最終圖案。It will be appreciated that the pattern "displayed" on an array of individually controllable devices may be substantially different, for example, when using feature pre-bias, optical proximity correction features, phase change techniques, and/or multiple exposure techniques. The pattern of the layer that is ultimately transferred to the layer of the substrate or to the substrate. Similarly, the pattern ultimately produced on the substrate may not correspond to the pattern formed on the array of individual controllable devices at any instant. In this configuration, it may be the case that the final formation on each portion of the substrate is established over a given period of time or a given number of exposures during pattern and/or relative positional change of the substrate on the individual controllable device array. pattern.

投影系統及/或照明系統可包括用於引導、塑形或控制輻射光束的各種類型之光學組件,例如,折射、反射、磁性、電磁、靜電或其他類型之光學組件,或其任何組合。The projection system and/or illumination system can include various types of optical components for guiding, shaping, or controlling the radiation beam, such as refractive, reflective, magnetic, electromagnetic, electrostatic, or other types of optical components, or any combination thereof.

微影裝置可為具有兩個(例如,雙載物台)或兩個以上基板台(及/或兩個或兩個以上圖案化元件台)的類型。在此等「多載物台」機器中,可並行地使用額外台,或可在一或多個台上進行預備步驟,同時將一或多個其他台用於曝光。The lithography device can be of the type having two (eg, dual stage) or more than two substrate stages (and/or two or more patterned element stages). In such "multi-stage" machines, additional stations may be used in parallel, or preliminary steps may be performed on one or more stations while one or more other stations are used for exposure.

微影裝置亦可為如下類型:其中基板之至少一部分可藉由具有相對較高折射率之「浸沒液體」(例如,水)覆蓋,以便填充介於投影系統與基板之間的空間。亦可將浸沒液體施加至微影裝置中之其他空間,例如,圖案化元件與投影系統之間的空間。浸沒技術係用以增加投影系統之NA。本文中所使用之術語「浸沒」不意謂結構(例如,基板)必須浸漬於液體中,而是僅意謂液體在曝光期間位於投影系統與基板之間。The lithography apparatus can also be of the type wherein at least a portion of the substrate can be covered by an "immersion liquid" (eg, water) having a relatively high refractive index to fill a space between the projection system and the substrate. The immersion liquid can also be applied to other spaces in the lithography apparatus, such as the space between the patterned elements and the projection system. The immersion technique is used to increase the NA of the projection system. The term "immersion" as used herein does not mean that a structure (eg, a substrate) must be immersed in a liquid, but rather only means that the liquid is located between the projection system and the substrate during exposure.

另外,裝置可具備流體處理單元以允許流體與基板之經輻照部分之間的相互作用(例如,以選擇性地將化學物附接至基板或選擇性地修改基板之表面結構)。Additionally, the device can be provided with a fluid processing unit to allow interaction between the fluid and the irradiated portion of the substrate (eg, to selectively attach the chemical to the substrate or selectively modify the surface structure of the substrate).

在一實施例中,基板具有實質上圓形形狀,視情況,沿著其周邊之部分具有凹口及/或平坦化邊緣。在一實施例中,基板具有多邊形形狀,例如,矩形形狀。基板具有實質上圓形形狀之實施例包括如下實施例:其中基板具有至少25毫米之直徑,例如,至少50毫米、至少75毫米、至少100毫米、至少125毫米、至少150毫米、至少175毫米、至少200毫米、至少250毫米或至少300毫米。在一實施例中,基板具有至多500毫米、至多400毫米、至多350毫米、至多300毫米、至多250毫米、至多200毫米、至多150毫米、至多100毫米或至多75毫米之直徑。基板係多邊形(例如,矩形)之實施例包括如下實施例:其中基板之至少一側(例如,至少兩側或至少三側)具有至少5公分之長度,例如,至少25公分、至少50公分、至少100公分、至少150公分、至少200公分或至少250公分。在一實施例中,基板之至少一側具有至多1000公分之長度,例如,至多750公分、至多500公分、至多350公分、至多250公分、至多150公分或至多75公分。在一實施例中,基板為具有約250公分至350公分之長度及約250公分至300公分之寬度的矩形基板。基板之厚度可變化,且在一定程度上,可取決於(例如)基板材料及/或基板尺寸。在一實施例中,厚度為至少50微米,例如,至少100微米、至少200微米、至少300微米、至少400微米、至少500微米或至少600微米。在一實施例中,基板之厚度為至多5000微米,例如,至多3500微米、至多2500微米、至多1750微米、至多1250微米、至多1000微米、至多800微米、至多600微米、至多500微米、至多400微米或至多300微米。可在曝光之前或之後在(例如)塗佈顯影系統(通常將抗蝕劑層施加至基板且顯影經曝光抗蝕劑之工具)中處理本文中所提及之基板。可在曝光之前或之後在(例如)度量衡工具及/或檢測工具中量測基板之屬性。In an embodiment, the substrate has a substantially circular shape, optionally with notches and/or flattened edges along portions of its perimeter. In an embodiment, the substrate has a polygonal shape, such as a rectangular shape. Embodiments in which the substrate has a substantially circular shape include embodiments in which the substrate has a diameter of at least 25 millimeters, for example, at least 50 millimeters, at least 75 millimeters, at least 100 millimeters, at least 125 millimeters, at least 150 millimeters, at least 175 millimeters, At least 200 mm, at least 250 mm or at least 300 mm. In an embodiment, the substrate has a diameter of at most 500 mm, at most 400 mm, at most 350 mm, at most 300 mm, at most 250 mm, at most 200 mm, at most 150 mm, at most 100 mm, or at most 75 mm. Embodiments of a substrate-based polygon (eg, a rectangle) include embodiments in which at least one side (eg, at least two sides or at least three sides) of the substrate has a length of at least 5 centimeters, eg, at least 25 centimeters, at least 50 centimeters, At least 100 cm, at least 150 cm, at least 200 cm or at least 250 cm. In an embodiment, at least one side of the substrate has a length of at most 1000 cm, for example, at most 750 cm, at most 500 cm, at most 350 cm, at most 250 cm, at most 150 cm, or at most 75 cm. In one embodiment, the substrate is a rectangular substrate having a length of from about 250 cm to about 350 cm and a width of from about 250 cm to about 300 cm. The thickness of the substrate can vary, and to some extent, can depend, for example, on the substrate material and/or substrate size. In one embodiment, the thickness is at least 50 microns, such as at least 100 microns, at least 200 microns, at least 300 microns, at least 400 microns, at least 500 microns, or at least 600 microns. In one embodiment, the substrate has a thickness of up to 5000 microns, for example, up to 3500 microns, up to 2500 microns, up to 1750 microns, up to 1250 microns, up to 1000 microns, up to 800 microns, up to 600 microns, up to 500 microns, up to 400 Micron or up to 300 microns. The substrates referred to herein may be treated before or after exposure, for example, in a coating development system, typically a resist layer is applied to the substrate and the exposed resist is developed. The properties of the substrate can be measured, for example, in a metrology tool and/or a detection tool before or after exposure.

在一實施例中,抗蝕劑層提供於基板上。在一實施例中,基板為晶圓,例如,半導體晶圓。在一實施例中,晶圓材料係選自由Si、SiGe、SiGeC、SiC、Ge、GaAs、InP及InAs組成之群組。在一實施例中,晶圓為III/V化合物半導體晶圓。在一實施例中,晶圓為矽晶圓。在一實施例中,基板為陶瓷基板。在一實施例中,基板為玻璃基板。玻璃基板可有用於(例如)平板顯示器及液晶顯示器面板之製造中。在一實施例中,基板為塑膠基板。在一實施例中,基板係透明的(對於人類肉眼而言)。在一實施例中,基板係彩色的。在一實施例中,基板係無色的。In an embodiment, a resist layer is provided on the substrate. In an embodiment, the substrate is a wafer, such as a semiconductor wafer. In one embodiment, the wafer material is selected from the group consisting of Si, SiGe, SiGeC, SiC, Ge, GaAs, InP, and InAs. In one embodiment, the wafer is a III/V compound semiconductor wafer. In one embodiment, the wafer is a germanium wafer. In an embodiment, the substrate is a ceramic substrate. In an embodiment, the substrate is a glass substrate. The glass substrate can be used in the manufacture of, for example, flat panel displays and liquid crystal display panels. In one embodiment, the substrate is a plastic substrate. In one embodiment, the substrate is transparent (for the human eye). In an embodiment, the substrate is colored. In one embodiment, the substrate is colorless.

雖然在一實施例中將圖案化元件104描述及/或描繪為處於基板114上方,但其可代替地或另外位於基板114下方。另外,在一實施例中,圖案化元件104與基板114可並排,例如,圖案化元件104及基板114垂直地延伸且圖案經水平地投影。在一實施例中,提供圖案化元件104以曝光基板114之至少兩個對置側。舉例而言,至少在基板114之每一各別對置側上可存在至少兩個圖案化元件104以曝光該等側。在一實施例中,可存在用以投影基板114之一側的單一圖案化元件104,及用以將來自單一圖案化元件104之圖案投影至基板114之另一側上的適當光學器件(例如,光束引導鏡面)。Although the patterned element 104 is depicted and/or depicted as being above the substrate 114 in an embodiment, it may alternatively or additionally be located below the substrate 114. Additionally, in one embodiment, the patterned elements 104 and the substrate 114 may be side by side, for example, the patterned elements 104 and the substrate 114 extend vertically and the pattern is projected horizontally. In an embodiment, the patterning element 104 is provided to expose at least two opposing sides of the substrate 114. For example, at least two patterned elements 104 may be present on at least each of the opposing sides of the substrate 114 to expose the sides. In one embodiment, there may be a single patterned element 104 for projecting one side of the substrate 114, and appropriate optics for projecting a pattern from the single patterned element 104 onto the other side of the substrate 114 (eg, , the beam guides the mirror).

雖然上文已描述本發明之特定實施例,但應瞭解,可以與所描述之方式不同的其他方式來實踐本發明。舉例而言,本發明可採取如下形式:電腦程式,該電腦程式含有描述如上文所揭示之方法之機器可讀指令的一或多個序列;或資料儲存媒體(例如,半導體記憶體、磁碟或光碟),該資料儲存媒體具有儲存於其中之此電腦程式。Although the specific embodiments of the invention have been described above, it is understood that the invention may be practiced otherwise than as described. For example, the present invention can take the form of a computer program containing one or more sequences of machine readable instructions describing a method as disclosed above; or a data storage medium (eg, semiconductor memory, disk) Or a disc), the data storage medium has the computer program stored therein.

此外,儘管已在特定實施例及實例之內容背景中揭示本發明,但熟習此項技術者應理解,本發明超出特定揭示之實施例而擴充至本發明之其他替代實施例及/或使用以及其明顯修改及等效物。此外,雖然已詳細地展示及描述本發明之許多變化,但基於此揭示,對於熟習此項技術者而言,在本發明之範疇內的其他修改將係顯而易見的。舉例而言,據預期,可進行該等實施例之特定特徵及態樣的各種組合或子組合,且該等組合或子組合仍屬於本發明之範疇。因此,應理解,可將所揭示實施例之各種特徵及態樣彼此組合或彼此取代,以便形成本發明之變化模式。舉例而言,在一實施例中,可將圖5之可移動個別可控制器件實施例與(例如)不可移動個別可控制器件陣列組合,以提供或具有備用系統。In addition, while the invention has been disclosed in the context of specific embodiments and examples, it will be understood by those skilled in the art that the present invention extends to other alternative embodiments and/or uses of the present invention and It is obviously modified and equivalent. In addition, many modifications of the present invention will be apparent to those skilled in the <RTIgt; For example, it is contemplated that various combinations or sub-combinations of the specific features and aspects of the embodiments may be made, and such combinations or sub-combinations are still within the scope of the invention. Therefore, it is understood that various features and aspects of the disclosed embodiments can be combined or substituted with each other to form a variation of the invention. For example, in one embodiment, the movable individually controllable device embodiment of FIG. 5 can be combined with, for example, a non-removable individual controllable device array to provide or have a backup system.

因此,雖然上文已描述本發明之各種實施例,但應理解,該等實施例係僅藉由實例而非限制進行呈現。對於熟習相關技術者將顯而易見,在不脫離本發明之精神及範疇的情況下,可在該等實施例中進行形式及細節之各種改變。因此,本發明之廣度及範疇不應受到上述例示性實施例中之任一者限制,而應僅根據申請專利範圍及該等申請專利範圍之等效物進行界定。Accordingly, while the various embodiments of the invention have been described, Various changes in form and detail may be made in the embodiments without departing from the spirit and scope of the invention. Therefore, the scope and spirit of the invention should not be construed as being limited by the scope of the invention.

100...微影投影裝置100. . . Photographic projection device

102...個別可定址器件/個別可控制器件/輻射發射二極體/輻射發射元件102. . . Individual addressable devices/individual controllable devices/radiation-emitting diodes/radiation-emitting components

104...圖案化元件104. . . Patterned component

106...物件固持器/物件台/基板台106. . . Object holder/object table/substrate table

108...投影系統108. . . Projection system

110...經圖案化輻射光束/經調變輻射光束110. . . Patterned radiation beam / modulated radiation beam

114...基板/晶圓114. . . Substrate/wafer

116...定位元件116. . . Positioning element

120...目標部分120. . . Target part

134...位置感測器134. . . Position sensor

136...基座136. . . Pedestal

138...干涉量測光束138. . . Interference measuring beam

150...對準感測器/位階感測器150. . . Alignment sensor / level sensor

160...框架160. . . frame

170...透鏡陣列170. . . Lens array

172...第二透鏡172. . . Second lens

174...孔徑光闌174. . . Aperture stop

176...第一透鏡176. . . First lens

200...個別可定址器件102陣列/個別可控制器件102陣列/二維輻射發射二極體陣列200. . . Individual Addressable Device 102 Array / Individual Controllable Device 102 Array / 2D Radiated Emission Diode Array

204...曝光區域204. . . Exposure area

206...軸線206. . . Axis

208...方向208. . . direction

210...個別可定址器件102子陣列210. . . Individual addressable device 102 subarray

212...開口212. . . Opening

214...支撐件214. . . supporting item

216...馬達216. . . motor

218...可旋轉結構218. . . Rotatable structure

220...馬達220. . . motor

222...流體傳導通道222. . . Fluid conduction channel

224...供應件224. . . Supply

226...返回件226. . . Return item

228...熱交換器及泵228. . . Heat exchanger and pump

230...散熱片230. . . heat sink

232...散熱片232. . . heat sink

234...感測器234. . . Sensor

236...流體限制結構236. . . Fluid confinement structure

238...流體238. . . fluid

240...流體供應元件240. . . Fluid supply element

242...成像透鏡/光學器件242. . . Imaging lens / optics

244...致動器244. . . Actuator

246...陣列200之本體246. . . The body of the array 200

248...孔隙結構248. . . Pore Structure

250...板250. . . board

252...空間相干性破壞元件252. . . Spatial coherence destruction element

254...聚焦或位階感測器254. . . Focus or level sensor

256...聚焦偵測光束256. . . Focus detection beam

258...半鍍銀鏡面258. . . Half silver plated mirror

260...刀緣260. . . Knife edge

262...偵測器262. . . Detector

400...控制器400. . . Controller

402...收發器402. . . transceiver

404...線404. . . line

406...收發器406. . . transceiver

500...感測器500. . . Sensor

502...光束重新引導結構502. . . Beam redirecting structure

504...結構504. . . structure

506...結構506. . . structure

508...致動器508. . . Actuator

510...感測器510. . . Sensor

520...感測器520. . . Sensor

522...經曝光區域522. . . Exposure area

600...可旋轉多邊形600. . . Rotatable polygon

602...軸線602. . . Axis

604...多邊形600之表面604. . . Surface of polygon 600

606...多邊形600之表面606. . . Surface of polygon 600

700...RF耦合700. . . RF coupling

800...經成像線800. . . Imaging line

801...轉輪801. . . Runner

802...透鏡802. . . lens

802A...透鏡802A. . . lens

802B...透鏡802B. . . lens

803...方向803. . . direction

804...成像透鏡804. . . Imaging lens

806...準直透鏡806. . . Collimating lens

808...成像透鏡808. . . Imaging lens

810...成像透鏡810. . . Imaging lens

812...透鏡812. . . lens

814...場透鏡814. . . Field lens

815...方向/部位815. . . Direction/part

816...成像透鏡816. . . Imaging lens

817...光瞳平面817. . . Optical plane

818...成像透鏡818. . . Imaging lens

820...抛物面鏡面820. . . Parabolic mirror

821...旋轉軸線821. . . Rotation axis

822...抛物面鏡面822. . . Parabolic mirror

823...成像透鏡242集合距旋轉軸線821之半徑823. . . The imaging lens 242 is assembled from a radius of the axis of rotation 821

824...反旋轉器824. . . Anti-rotator

826...抛物面鏡面826. . . Parabolic mirror

828...抛物面鏡面828. . . Parabolic mirror

829...X方向829. . . X direction

830...反旋轉器830. . . Anti-rotator

831...掃描方向831. . . Scanning direction

832...摺疊鏡面832. . . Folding mirror

833...方向833. . . direction

834...脊頂834. . . Ridge top

836...致動器836. . . Actuator

838...框架838. . . frame

840...框架840. . . frame

890...可移動板890. . . Movable board

900...微影裝置900. . . Lithography device

902...基板台902. . . Substrate table

904...定位元件904. . . Positioning element

906...個別可控制自發射對比元件906. . . Individually controllable self-emission contrast elements

908...框架908. . . frame

910...致動器/馬達910. . . Actuator/motor

912...可旋轉框架912. . . Rotatable frame

914...可移動光學器件914. . . Movable optics

916...軸線916. . . Axis

918...馬達918. . . motor

920...投影系統/透鏡920. . . Projection system / lens

922...孔隙結構922. . . Pore Structure

924...投影系統/場透鏡924. . . Projection system / field lens

926...框架926. . . frame

928...基板928. . . Substrate

930...投影系統/成像透鏡930. . . Projection system / imaging lens

932...對準/位階感測器932. . . Alignment/level sensor

934...陣列934. . . Array

936...可調整件936. . . Adjustable piece

938...基座部分938. . . Base part

940...中間部分940. . . Middle part

942...楔狀物部分942. . . Wedge portion

942A...通孔942A. . . Through hole

944...狹縮部944. . . Narrow section

944A...第一狹縮部944A. . . First narrowing

944B...第二狹縮部944B. . . Second narrowing

946...施拉元件946. . . Schrahing element

946A...狹長部分946A. . . Long and narrow part

946B...螺帽部分946B. . . Nut part

948...透鏡固持器948. . . Lens holder

950...互連螺釘950. . . Interconnecting screw

952...通孔952. . . Through hole

954...基座部分954. . . Base part

956...平衡塊狀物956. . . Balanced mass

958...互連結構/連接結構958. . . Interconnect structure/connection structure

960...調整塊狀物部分960. . . Adjusting the block portion

962...調整機構962. . . Adjustment mechanism

964...可旋轉框架側部分964. . . Rotatable frame side section

966...平衡塊狀物側部分966. . . Balanced block side part

968a...狹縮部分968a. . . Shrinking part

968b...狹縮部分968b. . . Shrinking part

968c...狹縮部分968c. . . Shrinking part

968d...狹縮部分968d. . . Shrinking part

970...中間部分970. . . Middle part

972...定位螺桿972. . . Positioning screw

974...彈簧負載調整結構974. . . Spring load adjustment structure

A...旋轉軸線A. . . Rotation axis

B...旋轉軸線B. . . Rotation axis

FWD...自由工作距離FWD. . . Free working distance

P...間距P. . . spacing

R...光點曝光之列R. . . Spot exposure

R1...列R1. . . Column

R2...列R2. . . Column

S...輻射光點S. . . Radiation spot

SA...輻射光點S陣列SA. . . Radiated spot S array

SE...光點曝光SE. . . Spot exposure

X...方向X. . . direction

Y...方向Y. . . direction

Z...方向Z. . . direction

圖1描繪根據本發明之一實施例之微影裝置的示意性側視圖。1 depicts a schematic side view of a lithography apparatus in accordance with an embodiment of the present invention.

圖2描繪根據本發明之一實施例之微影裝置的示意性俯視圖。2 depicts a schematic top view of a lithography apparatus in accordance with an embodiment of the present invention.

圖3描繪根據本發明之一實施例之微影裝置的示意性俯視圖。3 depicts a schematic top view of a lithography apparatus in accordance with an embodiment of the present invention.

圖4描繪根據本發明之一實施例之微影裝置的示意性俯視圖。4 depicts a schematic top view of a lithography apparatus in accordance with an embodiment of the present invention.

圖5描繪根據本發明之一實施例之微影裝置的示意性俯視圖。Figure 5 depicts a schematic top view of a lithography apparatus in accordance with an embodiment of the present invention.

圖6(A)至圖6(D)描繪根據本發明之一實施例之微影裝置之部分的示意性俯視圖及側視圖。6(A) through 6(D) are schematic plan and side views depicting portions of a lithography apparatus in accordance with an embodiment of the present invention.

圖7(A)至圖7(O)描繪根據本發明之一實施例之微影裝置之部分的示意性俯視圖及側視圖。7(A) through 7(O) depict schematic top and side views of portions of a lithography apparatus in accordance with an embodiment of the present invention.

圖7(P)描繪根據本發明之一實施例之個別可定址器件的功率/前向電流圖解。Figure 7 (P) depicts a power/forward current plot of an individual addressable device in accordance with an embodiment of the present invention.

圖8描繪根據本發明之一實施例之微影裝置的示意性側視圖。Figure 8 depicts a schematic side view of a lithography apparatus in accordance with an embodiment of the present invention.

圖9描繪根據本發明之一實施例之微影裝置的示意性側視圖。Figure 9 depicts a schematic side view of a lithography apparatus in accordance with an embodiment of the present invention.

圖10描繪根據本發明之一實施例之微影裝置的示意性側視圖。Figure 10 depicts a schematic side view of a lithography apparatus in accordance with an embodiment of the present invention.

圖11描繪根據本發明之一實施例之用於微影裝置之個別可控制器件陣列的示意性俯視圖。11 depicts a schematic top view of an array of individually controllable devices for a lithography apparatus in accordance with an embodiment of the present invention.

圖12描繪使用本發明之一實施例將圖案轉印至基板之模式。Figure 12 depicts a mode of transferring a pattern to a substrate using an embodiment of the present invention.

圖13描繪光學引擎之示意性配置。Figure 13 depicts a schematic configuration of an optical engine.

圖14(A)及圖14(B)描繪根據本發明之一實施例之微影裝置之部分的示意性側視圖。14(A) and 14(B) depict schematic side views of portions of a lithography apparatus in accordance with an embodiment of the present invention.

圖15描繪根據本發明之一實施例之微影裝置的示意性俯視圖。Figure 15 depicts a schematic top view of a lithography apparatus in accordance with an embodiment of the present invention.

圖16(A)描繪根據本發明之一實施例之微影裝置之部分的示意性側視圖。Figure 16 (A) depicts a schematic side view of a portion of a lithography apparatus in accordance with an embodiment of the present invention.

圖16(B)描繪感測器之偵測區域相對於基板之示意性位置。Figure 16 (B) depicts the schematic position of the sensing area of the sensor relative to the substrate.

圖17描繪根據本發明之一實施例之微影裝置的示意性俯視圖。Figure 17 depicts a schematic top view of a lithography apparatus in accordance with an embodiment of the present invention.

圖18描繪根據本發明之一實施例之微影裝置的示意性橫截面側視圖。Figure 18 depicts a schematic cross-sectional side view of a lithography apparatus in accordance with an embodiment of the present invention.

圖19描繪微影裝置之部分的示意性俯視圖佈局,微影裝置具有根據本發明之一實施例的在X-Y平面中實質上靜止之個別可控制器件及相對於個別可控制器件可移動之光學器件。19 depicts a schematic top view layout of a portion of a lithography apparatus having individual controllable devices that are substantially stationary in an XY plane and optics that are movable relative to individual controllable devices, in accordance with an embodiment of the present invention. .

圖20描繪圖19之微影裝置之部分的示意性三維圖式。20 depicts a schematic three-dimensional view of a portion of the lithography apparatus of FIG.

圖21描繪微影裝置之部分的示意性側視圖佈局,微影裝置具有根據本發明之一實施例的在X-Y平面中實質上靜止之個別可控制器件及相對於個別可控制器件可移動之光學器件,且展示光學器件242集合相對於個別可控制器件之三個不同旋轉位置。21 depicts a schematic side view layout of a portion of a lithography apparatus having individual controllable devices that are substantially stationary in an XY plane and optically movable relative to individual controllable devices, in accordance with an embodiment of the present invention. The device, and the set of optical devices 242 are shown in three different rotational positions relative to the individual controllable devices.

圖22描繪微影裝置之部分的示意性側視圖佈局,微影裝置具有根據本發明之一實施例的在X-Y平面中實質上靜止之個別可控制器件及相對於個別可控制器件可移動之光學器件,且展示光學器件242集合相對於個別可控制器件之三個不同旋轉位置。22 depicts a schematic side view layout of a portion of a lithography apparatus having individual controllable devices that are substantially stationary in the XY plane and optically movable relative to the individual controllable devices, in accordance with an embodiment of the present invention. The device, and the set of optical devices 242 are shown in three different rotational positions relative to the individual controllable devices.

圖23描繪微影裝置之部分的示意性側視圖佈局,微影裝置具有根據本發明之一實施例的在X-Y平面中實質上靜止之個別可控制器件及相對於個別可控制器件可移動之光學器件,且展示光學器件242集合相對於個別可控制器件之五個不同旋轉位置。23 depicts a schematic side view layout of a portion of a lithography apparatus having individual controllable devices that are substantially stationary in an XY plane and optically movable relative to individual controllable devices, in accordance with an embodiment of the present invention. The device, and showing the set of optics 242 at five different rotational positions relative to the individual controllable devices.

圖24描繪在使用具有5.6毫米之直徑的標準雷射二極體以獲得橫越基板之寬度之全覆蓋時個別可控制器件102之部分的示意性佈局。24 depicts a schematic layout of portions of individually controllable devices 102 when a standard laser diode having a diameter of 5.6 millimeters is used to achieve full coverage across the width of the substrate.

圖25描繪圖24之細節的示意性佈局。Figure 25 depicts a schematic layout of the detail of Figure 24.

圖26描繪微影裝置之部分的示意性側視圖佈局,微影裝置具有根據本發明之一實施例的在X-Y平面中實質上靜止之個別可控制器件及相對於個別可控制器件可移動之光學器件。26 depicts a schematic side view layout of a portion of a lithography apparatus having individual controllable devices that are substantially stationary in an XY plane and optically movable relative to individual controllable devices, in accordance with an embodiment of the present invention. Device.

圖27描繪微影裝置之部分的示意性側視圖佈局,微影裝置具有根據本發明之一實施例的在X-Y平面中實質上靜止之個別可控制器件及相對於個別可控制器件可移動之光學器件。27 depicts a schematic side view layout of a portion of a lithography apparatus having individual controllable devices that are substantially stationary in an XY plane and optically movable relative to individual controllable devices, in accordance with an embodiment of the present invention. Device.

圖28描繪微影裝置之部分的示意性側視圖佈局,微影裝置具有根據本發明之一實施例的在X-Y平面中實質上靜止之個別可控制器件及相對於個別可控制器件可移動之光學器件,且展示光學器件242集合相對於個別可控制器件之五個不同旋轉位置。28 depicts a schematic side view layout of a portion of a lithography apparatus having individual controllable devices that are substantially stationary in an XY plane and optically movable relative to individual controllable devices, in accordance with an embodiment of the present invention. The device, and showing the set of optics 242 at five different rotational positions relative to the individual controllable devices.

圖29描繪圖28之微影裝置之部分的示意性三維圖式。29 depicts a schematic three-dimensional view of a portion of the lithography apparatus of FIG.

圖30示意性地描繪藉由圖28及圖29之單一可移動光學器件242集合同時地書寫的8條線之配置。FIG. 30 schematically depicts an arrangement of eight lines simultaneously written by a single movable optics 242 of FIGS. 28 and 29.

圖31描繪用以在圖28及圖29之配置中以移動脊頂來控制聚焦的示意性配置。Figure 31 depicts a schematic configuration for controlling focus in a configuration of Figures 28 and 29 with a moving ridge.

圖32描繪根據本發明之一實施例之微影裝置的示意性橫截面側視圖,微影裝置具有根據本發明之一實施例的在X-Y平面中實質上靜止之個別可控制器件及相對於個別可控制器件可移動之光學器件。32 depicts a schematic cross-sectional side view of a lithography apparatus having individual controllable devices that are substantially stationary in an XY plane and relative to individual, in accordance with an embodiment of the present invention, in accordance with an embodiment of the present invention. Controls the movable optics of the device.

圖33描繪根據本發明之一實施例的微影裝置之部分。Figure 33 depicts a portion of a lithography apparatus in accordance with an embodiment of the present invention.

圖34描繪根據本發明之一實施例的圖33之微影裝置之部分的俯視圖。Figure 34 depicts a top plan view of a portion of the lithography apparatus of Figure 33, in accordance with an embodiment of the present invention.

圖35描繪根據本發明之一實施例的根據圖33之微影裝置之細節的高度示意性透視圖。Figure 35 depicts a highly schematic perspective view of details of the lithography apparatus according to Figure 33, in accordance with an embodiment of the present invention.

圖36描繪根據本發明之一實施例的如圖35所描繪之微影裝置之細節的部分透明示意性透視圖。36 depicts a partially transparent schematic perspective view of details of a lithography apparatus as depicted in FIG. 35, in accordance with an embodiment of the present invention.

圖37描繪根據本發明之一實施例的如圖35所描繪之器件中之一些器件之另外實施例的高度示意性透視圖。37 depicts a highly schematic perspective view of another embodiment of some of the devices depicted in FIG. 35, in accordance with an embodiment of the present invention.

圖38描繪根據本發明之一實施例的裝置之部分的高度示意性側視圖。Figure 38 depicts a highly schematic side view of a portion of a device in accordance with an embodiment of the present invention.

圖39描繪根據本發明之一實施例的裝置之部分的高度示意性側視圖。Figure 39 depicts a highly schematic side view of a portion of a device in accordance with an embodiment of the present invention.

912...可旋轉框架912. . . Rotatable frame

930...投影系統/成像透鏡930. . . Projection system / imaging lens

936...可調整件936. . . Adjustable piece

938...基座部分938. . . Base part

940...中間部分940. . . Middle part

942...楔狀物部分942. . . Wedge portion

944...狹縮部944. . . Narrow section

944A...第一狹縮部944A. . . First narrowing

944B...第二狹縮部944B. . . Second narrowing

946...施拉元件946. . . Schrahing element

946A...狹長部分946A. . . Long and narrow part

946B...螺帽部分946B. . . Nut part

948...透鏡固持器948. . . Lens holder

Claims (27)

一種微影裝置,其包含:一光學圓柱,該光學圓柱能夠在一基板之一目標部分上產生一圖案,該光學圓柱包含一投影系統,該投影系統經組態以將一光束投影至該基板上,該投影系統包含一可旋轉框架及藉由該可旋轉框架支撐之複數個透鏡;一致動器,該致動器經組態以旋轉該框架;及一可調整件,該可調整件用以相對於該可旋轉框架調整該等透鏡中之至少一者之一位置。 A lithography apparatus comprising: an optical cylinder capable of producing a pattern on a target portion of a substrate, the optical cylinder comprising a projection system configured to project a beam onto the substrate The projection system includes a rotatable frame and a plurality of lenses supported by the rotatable frame; an actuator configured to rotate the frame; and an adjustable member for the adjustable member Adjusting a position of at least one of the lenses relative to the rotatable frame. 如請求項1之裝置,其中每一透鏡係藉由一對應可調整件而附接至該可旋轉框架。 A device as claimed in claim 1, wherein each lens is attached to the rotatable frame by a corresponding adjustable member. 如請求項1或2之裝置,其中該可調整件包含一楔狀物部分,該楔狀物部分具有在該可旋轉框架之一旋轉軸線之一方向上所見的一楔狀物形狀。 A device according to claim 1 or 2, wherein the adjustable member comprises a wedge portion having a wedge shape as seen in one of the axes of rotation of the rotatable frame. 如請求項3之裝置,其中該可調整件進一步包含:一基座部分,該基座部分插入於該楔狀物部分與該可旋轉框架之間;及一連接部分,該楔狀物部分插入於該基座部分與該連接部分之間。 The device of claim 3, wherein the adjustable member further comprises: a base portion interposed between the wedge portion and the rotatable frame; and a connecting portion, the wedge portion is inserted Between the base portion and the connecting portion. 如請求項4之裝置,其中該楔狀物部分包含一通孔,且用以經由該楔狀物部分將該連接部分附接至該基座部分之一互連螺釘延伸通過該楔狀物部分之該通孔。 The device of claim 4, wherein the wedge portion includes a through hole and is adapted to attach the connecting portion to the one of the base portion via the wedge portion, and the interconnecting screw extends through the wedge portion The through hole. 如請求項5之裝置,其中該互連螺釘之一硬度低於該基座部分及該連接部分之一硬度。 The device of claim 5, wherein one of the interconnecting screws has a hardness lower than a hardness of the base portion and the connecting portion. 如請求項4之裝置,其中該連接部分包含:一狹縮部, 該狹縮部處於垂直於該可旋轉框架之徑向方向的一方向上;及一推挽式元件,該推挽式元件在該徑向方向上延伸遍及該狹縮部。 The device of claim 4, wherein the connecting portion comprises: a narrowing portion, The narrowing portion is in a direction perpendicular to a radial direction of the rotatable frame; and a push-pull element extending in the radial direction throughout the narrowing portion. 如請求項1或2之裝置,其中該框架之旋轉移動大於500RPM、大於1000RPM、大於2000RPM或大於4000RPM。 The device of claim 1 or 2, wherein the rotational movement of the frame is greater than 500 RPM, greater than 1000 RPM, greater than 2000 RPM, or greater than 4000 RPM. 如請求項1或2之裝置,其進一步包含至少一自發射對比元件,該至少一自發射對比元件經組態以發射該光束。 The device of claim 1 or 2, further comprising at least one self-emissive contrast element configured to emit the light beam. 如請求項1或2之裝置,其中該可調整件包含一調整塊狀物部分,該調整塊狀物部分可在實質上平行於該框架之一旋轉軸線的一方向上調整於適當位置中。 The device of claim 1 or 2, wherein the adjustable member comprises an adjustment block portion that is adjustable in position in a direction substantially parallel to one of the axes of rotation of the frame. 如請求項1或2之裝置,其中該可調整件包含:一基座部分,該可調整件係藉由該基座部分而安裝至該框架;一平衡塊狀物,該平衡塊狀物固持該等透鏡中之至少一者;及一連接結構,該連接結構用以將該平衡塊狀物連接至該基座部分,其中該平衡塊狀物與該至少一透鏡之一總成相對於垂直於該框架之一旋轉軸線的一平面實質上平衡。 The device of claim 1 or 2, wherein the adjustable member comprises: a base portion mounted to the frame by the base portion; a balance block, the balance block holding At least one of the lenses; and a connection structure for connecting the balance mass to the base portion, wherein the balance block is perpendicular to one of the at least one lens assembly A plane that is one of the axes of rotation of the frame is substantially balanced. 如請求項11之裝置,其中該平面相交於該連接結構。 The device of claim 11, wherein the plane intersects the connection structure. 如請求項11之裝置,其中該平衡塊狀物包含一調整塊狀物部分。 The device of claim 11, wherein the balancing mass comprises an adjustment block portion. 如請求項11之裝置,其中該可調整件進一步包含一彈簧負載調整結構,該彈簧負載調整結構經組態以將一力施加於該框架與該平衡塊狀物之間。 The device of claim 11, wherein the adjustable member further comprises a spring load adjustment structure configured to apply a force between the frame and the balance mass. 如請求項11之裝置,其中該基座部分包含一調整機構,該調整機構經組態以使該基座部分之一平衡塊狀物側部分可相對於該基座部分之一框架側部分調整於適當位置中。 The apparatus of claim 11, wherein the base portion includes an adjustment mechanism configured to adjust a balance block side portion of the base portion to be adjustable with respect to a frame side portion of the base portion In the right place. 一種元件製造方法,其包含:藉由使用一投影系統將一輻射光束投影至基板上而在該基板之一目標部分上產生一圖案,該投影系統具有一可旋轉框架及藉由該可旋轉框架支撐之複數個透鏡;及藉由旋轉該可旋轉框架而相對於該基板移動該等透鏡,其中藉由一可調整件而相對於該可旋轉框架調整該等透鏡中之至少一者之一位置。 A component manufacturing method comprising: generating a pattern on a target portion of a substrate by projecting a radiation beam onto a substrate by using a projection system, the projection system having a rotatable frame and by the rotatable frame Supporting a plurality of lenses; and moving the lenses relative to the substrate by rotating the rotatable frame, wherein at least one of the lenses is adjusted relative to the rotatable frame by an adjustable member . 如請求項16之方法,其中針對該等透鏡中之該至少一者執行一聚焦調整,該聚焦調整包含:將該可調整件安裝至該可旋轉框架;及調整在該可旋轉框架之一徑向方向上延伸遍及該可調整件之一狹縮部的一推挽式元件,該狹縮部處於垂直於該可旋轉框架之該徑向方向的一方向上。 The method of claim 16, wherein a focus adjustment is performed for the at least one of the lenses, the focus adjustment comprising: mounting the adjustable member to the rotatable frame; and adjusting a diameter in the rotatable frame A push-pull element extending in a direction across one of the narrowing portions of the adjustable member, the narrowing portion being in a direction perpendicular to the radial direction of the rotatable frame. 如請求項16或17之方法,其中該可調整件包含一楔狀物部分及一互連螺釘,該互連螺釘在該可旋轉框架之該徑向方向上延伸通過該楔狀物部分之一通孔,該方法包含:調整該楔狀物部分之一位置以在該徑向方向上定位一對應透鏡;及 拉緊該互連螺釘以在該徑向方向上調整該透鏡之該位置。 The method of claim 16 or 17, wherein the adjustable member comprises a wedge portion and an interconnecting screw extending through the wedge portion in the radial direction of the rotatable frame a hole, the method comprising: adjusting a position of the wedge portion to position a corresponding lens in the radial direction; and The interconnecting screw is tensioned to adjust the position of the lens in the radial direction. 如請求項16或17之方法,其進一步包含自至少一自發射對比元件發射該輻射光束。 The method of claim 16 or 17, further comprising transmitting the radiation beam from at least one self-emissive contrast element. 一種微影裝置,其包含:複數個透鏡或一個別可控制器件陣列,該複數個透鏡或該個別可控制器件陣列係藉由一可旋轉框架支撐;一致動器,該致動器經組態以旋轉該可旋轉框架;及一可調整件,該可調整件用以相對於該可旋轉框架調整該等透鏡中之至少一者及/或該等個別可控制器件中之至少一者之一位置。 A lithography apparatus comprising: a plurality of lenses or an array of controllable devices supported by a rotatable frame; an actuator configured To rotate the rotatable frame; and an adjustable member for adjusting at least one of the lenses and/or at least one of the individually controllable devices relative to the rotatable frame position. 一種微影裝置,其包含:一光學圓柱,該光學圓柱能夠在一基板之一目標部分上產生一圖案,該光學圓柱包含複數個個別可控制器件,該複數個個別可控制器件經組態以發射一光束,該複數個個別可控制器件係藉由一可移動框架支撐;一致動器,該致動器經組態以移動該框架;及一可調整件,該可調整件用以相對於該可移動框架調整該等個別可控制器件中之至少一者之一位置。 A lithography apparatus comprising: an optical cylinder capable of producing a pattern on a target portion of a substrate, the optical cylinder comprising a plurality of individually controllable devices, the plurality of individually controllable devices being configured Transmitting a light beam, the plurality of individually controllable devices being supported by a movable frame; an actuator configured to move the frame; and an adjustable member for opposing the relative The movable frame adjusts a position of at least one of the individually controllable devices. 如請求項21之裝置,其中該可調整件包含一調整塊狀物部分,該調整塊狀物部分可在實質上平行於該框架之一旋轉軸線的一方向上調整於適當位置中。 The device of claim 21, wherein the adjustable member comprises an adjustment block portion that is adjustable in position in a direction substantially parallel to one of the axes of rotation of the frame. 如請求項22之裝置,其中該可調整件包含:一基座部分,該可調整件係藉由該基座部分而安裝至該框架;一 平衡塊狀物,該平衡塊狀物固持該等透鏡中之至少一者;及一連接結構,該連接結構用以將該平衡塊狀物連接至該基座部分,其中該平衡塊狀物與該至少一透鏡之一總成相對於垂直於該框架之一旋轉軸線的一平面實質上平衡。 The device of claim 22, wherein the adjustable member comprises: a base portion, the adjustable member being mounted to the frame by the base portion; a balancing mass holding at least one of the lenses; and a connecting structure for attaching the balancing mass to the base portion, wherein the balancing mass is One of the at least one lens is substantially balanced with respect to a plane that is perpendicular to one of the axes of rotation of the frame. 如請求項23之裝置,其中該平面相交於該連接結構。 The device of claim 23, wherein the plane intersects the connection structure. 如請求項23或24之裝置,其中該平衡塊狀物包含一調整塊狀物部分。 The device of claim 23 or 24, wherein the balancing mass comprises an adjustment block portion. 如請求項23或24之裝置,其中該可調整件進一步包含一彈簧負載調整結構,該彈簧負載調整結構經組態以將一力施加於該框架與該平衡塊狀物之間。 The device of claim 23 or 24, wherein the adjustable member further comprises a spring load adjustment structure configured to apply a force between the frame and the balance mass. 如請求項23或24之裝置,其中該基座部分包含一調整機構,該調整機構經組態以使該基座部分之一平衡塊狀物側部分可相對於該基座部分之一框架側部分調整於適當位置中。 The device of claim 23 or 24, wherein the base portion includes an adjustment mechanism configured to balance one of the base portions with a side portion of the block relative to a frame side of the base portion Partially adjusted in place.
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