CN201083959Y - Integrated type direct-writing lithographic equipment - Google Patents
Integrated type direct-writing lithographic equipment Download PDFInfo
- Publication number
- CN201083959Y CN201083959Y CNU2007200378059U CN200720037805U CN201083959Y CN 201083959 Y CN201083959 Y CN 201083959Y CN U2007200378059 U CNU2007200378059 U CN U2007200378059U CN 200720037805 U CN200720037805 U CN 200720037805U CN 201083959 Y CN201083959 Y CN 201083959Y
- Authority
- CN
- China
- Prior art keywords
- lens
- optical
- projection lens
- converter
- projection
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Images
Abstract
The utility model provides an integrated direct-write lithographic equipment, belonging to lithographic technical field, which resolves the problems that the current step direct-write photoetching is low in efficiency and the single pixel continuously-scan lithography is hard to operate. The utility model combines the two above, which is characterized in that a reflector is arranged between a lens and a projection lens and two or more projection lenses in different power are arranged in a discal converter. An optical orientation detecting system comprises an optical wavelength beam splitter which is coaxial with the projection lenses on the converter. An imaging system is arranged is coaxially arranged on one side of the optical wavelength beam splitter, which comprises an image-detect lens and a photosensitive detector. The utility model adopts projection lenses in different power and improves the exposure efficiency and also adopts the coaxial optical orientation detecting system and achieves that the images produced by the projection lenses in different power can connect with each other without gap. The utility model adopts the mixing method of direct-write scan and final minification typeset and also has the advantages of enabling smooth outline of the image and improving the exposure efficiency.
Description
Technical field
The present invention relates to technical field of lithography, specifically, relate to the direct-write light scribing device of printing composition on substrates such as wafer, printed circuit board (PCB), mask plate, flat-panel monitor, biochip, micromechanics electronic wafer, optical glass flat board.
Background technology
Photoetching technique is to be used for the composition that printing has feature on substrate surface.Such substrate can comprise be used for producing the semiconductor devices, the substrate of multiple integrated circuit, flat-panel screens (for example LCD), circuit board, biochip, micromechanics electronic chip, photoelectron circuit chip etc.Often the substrate that uses is semiconductor wafer or glass substrate.Those skilled in the art will appreciate that the description of this paper, also be applied in other types substrate well known by persons skilled in the art.
In photoetching process, wafer is placed on the wafer station, by being in the exposure device in the lithographic equipment, characteristic composition is projected wafer surface.Although in photoetching process, used projecting optical device, also can use different type exposure devices according to concrete application.The different exposure devices of X ray, ion, electronics or photon photoetching for example, this is well known to those skilled in the art.At this, only for purpose of explanation, the concrete example of photoetching is discussed.
Tradition substep repetition formula that semicon industry uses or substep scan-type lithography tool, with the characteristic composition of graticule in each disposable projection or scan on the wafer, single exposure or scan a field.Come next field is carried out the exposure process of repeatability then by mobile wafer.Traditional etching system is realized the printing of the accurate characteristic composition of high production volume by repeatability exposure or scanning process.
In order on wafer, to make device, need a plurality of graticules.Owing to the minimizing of characteristic dimension and for the precision tolerance demand than small-feature-size, these graticules cost for production is very high, and is consuming time very long, thereby makes the conventional wafer photolithographic fabrication cost that utilizes graticule more and more higher, very expensive.
No mask (as directly writing or digital etc.) etching system is looked into the method for graticule with respect to use, and many benefits are provided aspect photoetching.No mask system usage space pattern generator (SLM) replaces graticule.SLM comprises digital micro-mirror system (DMD) or LCD (LCD), and SLM comprises independently addressable and a control cell array, and each pixel can produce the modulation that comprise phase place, gray scale direction or on off state to the light of transmission, reflection or diffraction.
What mask-free photolithography system mainly adopted is following two kinds of methods: one, the straight literary style of laser beam; Two, the final minification of space diagram generator is set type and is exposed.Wherein, the straight literary style of laser beam is the pointwise exposure, adopts superlaser directly to produce figure on the photaesthesia substrate, and process velocity is slow, and the single wafer time shutter is long; Second method adopts computer control pattern generator (SLM), produce the feature pattern of huge territory property, the corresponding huge territory to the photaesthesia substrate of exposing once, subject matter is that resolution is lower, and be subjected to the shape of unit pixel and the effectively restriction of clear aperature (fill-in factor), be difficult to make smooth graph outline continuously.
Summary of the invention
The objective of the invention is: a kind of projection lens that adopts variable power is provided, improves exposure efficiency, realize the photaesthesia substrate is directly write the integrative type direct-writing photo-etching device of scanning and multiple step format composing composition.
Concrete structural design scheme is as follows:
The integrative type direct-writing photo-etching device comprises the light source 1 of an illumination pattern generator, an optical light-collecting system 2 that is used to provide illumination beam, a programmable pattern generator 3, a projection optical system that adopts core structure far away, an optical alignment detection system coaxial with projection optical system, the computer control system of the precise mobile platform 10 of a mobile photaesthesia substrate and control various piece; Wherein light source 1 and optical light-collecting system 2 coaxial correspondences are located at programmable pattern generator 3 one sides, and projection optical system comprises lens or lens combination 4 and projection lens 5.The optical alignment detection system comprises projection lens 5, the coaxial optical wavelength beam splitter 6 of the different projection lens by different multiplying, parallel being provided with of optical wavelength beam splitter 6 one sides comprises the optical imaging system that detects beam splitter 12, detects lens 13 and photaesthesia detector 8
The integrative type direct-writing photo-etching device, 1, one of the light source that comprises an illumination pattern generator is used to provide 2, one programmable pattern generators 3 of optical light-collecting system of illumination beam, a projection optical system, the precise mobile platform 10 of a mobile photaesthesia substrate; Wherein light source 1 and optical light-collecting system 2 coaxial correspondences are located at programmable pattern generator 3 one sides, and projection optical system comprises lens or lens combination 4 and projection lens 5, and design feature is:
Between lens or lens combination 4 and projection lens 5, be provided with catoptron 14,
The converter 9 that also comprises the projection lens of a different multiplying, converter 9 is a plate-like, be located on the frame by rotation axis, converter 9 is provided with the projection lens 5 of two above different multiplying, and the radius of the centre distance converter 9 rotation axis center lines of the projection lens 5 of described two above different multiplying equates;
Also comprise an optical alignment detection system, described system comprise with converter 9 on the coaxial optical wavelength beam splitter 6 of projection lens 5, coaxial being provided with of optical wavelength beam splitter 6 one sides detected imaging len 13 and photaesthesia detector 8.
Described light source 1 is a LED source, or is arc lamp, or is laser instrument.
Be provided with between the optical wavelength beam splitter 6 of described optical alignment detection system and the detection imaging len 13 and detect beam splitter 12, detect beam splitter 12 1 sides and be provided with contraposition focusing light source 7.
Described converter 9 is provided with the projection lens 5 of five different multiplying.
Above-mentioned pattern generator comprises the element that can switch separately of at least one array, is produced the composition of feature by computer control.Pattern generator can be reflection, and diffraction or transmission device are preferably space reflection lens array (DMD).Radiation source can be a continuous light source, as lonely light modulation, LED or continuous laser, also can use pulse modulated LED or quasi-continuous lasing in pulsed frequency during far above the switching frequency of the element of pattern generator.Radiation source is preferably led light source, can use pulse modulated led light source in pulsed frequency during far above the switching frequency of the element of pattern generator.The characteristic composition that pattern generator produces is projected on the photaesthesia substrate with certain final minification ratio (M) by optical projection system, and the change of final minification ratio is realized by the projecting lens of using different multiplying instead.Final minification ratio M can be greater than 1 (M＞1), also can be less than 1 (M＜=1), by the characteristic dimension and the decision of printed dimensions size of practical application.In a preferred embodiment, we have described the application of final minification ratio M＜1, but those skilled in the art understands, and similarly application can use the situation of M＞1.Moving of photaesthesia substrate can realize on three, four or six space precise mobile platform.Projection optical system adopts core structure far away.
In preferred scheme, projection optical system is projected in the figure of pattern generator on the light sensor at a certain time interval, light sensor moves between the graphic projection interval, the figure of pattern generator is also switching simultaneously, makes the composition of projection once more and the composition of last time projection constitute in succession seamless.
In preferred scheme, pattern generator is shone continuously, and projection optical system is projected in characteristic composition on the light sensor continuously, and light sensor moves on precise mobile platform continuously, produces the smooth composition of continuous exposure.
In preferred scheme, pattern generator is by the combination of aforementioned two kinds of radiation modalities, compartment of terrain and projecting to continuously on the light sensor respectively, and projection optical system selects for use different final minification multiplying powers to carry out graphic projection therebetween, with the minimizing time shutter, and produce smooth profile continuously.
Useful technique effect of the present utility model is to adopt the projection lens of variable power, the efficient of raising exposure.Adopt coaxial optical alignment detection system, reach the figure that the projection lens of the multiplying power of change produces and to carry out seamless connectivity.This device adopts the mixing method of directly writing scanning and final minification composing, realizes smooth graph outline, and improves the efficient of exposure.
For example, can select for use four groups of multiplying powers to be respectively 1/5,1/10 in preferred embodiments, 1/20,1/40 projection lens, the projection lens by 1/40 reaches highest resolution 0.5 microns, adopt the mixing method of directly writing scanning and final minification composing can produce minimum line generous 0.5 microns smooth graph outline.For the composition of big feature, multiplying power is respectively 1/5,1/10 simultaneously, and the projection lens that 1/20 projection lens can produce than 1/40 is respectively the exposure area of 64,16,4 multiples greatly, thereby obtains the exposure efficiency of corresponding multiple.
Description of drawings
Fig. 1 is the utility model structural representation,
Fig. 2 adopts the structural representation of Different Light for optical alignment detection system and exposure projections.
Fig. 3 realizes the exemplary plot of integrative type direct-writing photo-etching for the utility model device.
Embodiment
Below in conjunction with accompanying drawing, the utility model is further described by embodiment.
Embodiment 1:
Referring to Fig. 1, the integrative type direct-writing photo-etching device comprises:
A light source 1 that is used to provide illumination beam is preferably light emitting diode, also can be arc lamp, can also be laser instrument.
An optical light-collecting system 2 that is used to provide illumination beam, shown in Fig. 1 is a slice optical device, one skilled in the art should appreciate that to also using the optical device combination of multi-disc.Same understanding is applicable to the optical device shown in all pictures.
A programmable pattern generator 3 is preferably the space micro reflector array, and he has the element of independently addressable independent switching.
A projection optical system that adopts core structure far away comprises lens or lens combination 4 and projection lens 5, and wherein projection lens 5 is the plural projection lens of the different multiplying that can change.Lens or lens combination 4 and projection lens 5 adopt the parallel construction of non co axial, as shown in Figure 1, obtain the parallel light path of non co axial by parallel optical wavelength beam splitter 6 and catoptron 14.
The converter 9 of the projection lens of a different multiplying, converter 9 is a plate-like, be located on the frame by rotation axis, the radius of centre distance converter 9 rotation axis center lines of projection lens 5 that converter 9 is provided with 5, five different multiplying of projection lens of five different multiplying equates.
A precise mobile platform 10 is in order to carrying light sensor 11.
Coaxial optical alignment detection system by the different projection lens of different multiplying,
This system comprises a coaxial optical wavelength beam splitter 6 by the different projection lens of different multiplying, and optical wavelength beam splitter 6 upper vertical are provided with and comprise the optical imaging system that detects lens 13 and photaesthesia detector 8;
The illumination beam that light source 1 produces through the optically focused of optical light-collecting system 2, projects on the pattern generator 3 after evenly.Optical light-collecting system 2 can comprise the condenser that is used to collect illumination beam, also comprises the adjusting gear that is used to be provided with beam intensity, integrator for example, compound eye.In this way, the light beam that incides on the pattern generator has needed homogeneity, intensity distributions and angular distribution.
The spatial modulation figure projects the light sensor surface through projection optical system with certain enlargement ratio M.The selection of M＞1 can be taked but those skilled in the art also understands enlargement ratio M in enlargement ratio M＜1 shown in Figure 1 in different application.Different enlargement ratios produces the area size of different projection patterns on light sensor, the pattern time shutter of the big feature that makes reduces, and has saved repeatedly moving back and forth of precise mobile platform, has improved exposure efficiency.For little feature pattern, utilize the high resolving power of high enlargement ratio to produce simultaneously, guarantee the characteristic composition of figure.
The converter 9 of the projection lens of different multiplying is a rotary-disk type structure, can be manually, also can be machinery control transformation automatically.The projection lens of each different enlargement ratio is done and is dropped on the identical radius distance of distance transducer 9, can be transformed into the position of projection lens 5 in the projecting light path successively by converter 9, and and attachment lens or lens combination 4 with one heart and coaxial, to guarantee the quality of projection imaging to the wafer.
The optical alignment detection system has adopted the light source identical with exposure projections 1.Use optical beam-splitter 6, make on the light sensor fixing telltale mark by imaging to position detecting system, and, obtain the accurate spatial positional information of projection lens 5 with respect to light sensor by Computer Processing.By accurate space orientation, can guarantee that the exposure figure of the projection lens of different enlargement ratios can be realized seamless connectivity on the light sensor surface to the projection lens of different enlargement ratios.Realize this function; requiring telltale mark fixing on the light sensor can not be exposed the identical light source of projection 1 influences; for example on fixing telltale mark, do not spray light sensitive material, perhaps in light sensor subsequent processes process, fixing telltale mark is protected.
Embodiment 2:
Fig. 2 schematically shows another kind of integrative type direct-writing photo-etching device according to a specific embodiment of the present invention.This device comprises:
A light source 1 that is used to provide illumination beam is preferably light emitting diode,
An optical light-collecting system 2 that is used to provide illumination beam, shown in Fig. 2 is a slice optical device, one skilled in the art should appreciate that to also using the optical device combination of multi-disc.Same understanding is applicable to the optical device shown in all pictures.
A programmable pattern generator 3 is preferably the space micro reflector array, and he has the element of independently addressable independent switching.
A projection optical system that adopts core structure far away comprises lens or lens combination 4 and projection lens 5, and wherein projection lens 5 is the plural projection lens of the different multiplying that can change.Lens or lens combination 4 and projection lens 5 adopt the parallel construction of non co axial, as shown in Figure 2, obtain the parallel light path of non co axial by parallel optical wavelength beam splitter 6 and catoptron 14.
The converter 9 of the projection lens of a different multiplying, converter 9 is a plate-like, be located on the frame by rotation axis, converter 9 is provided with the projection lens 5 of two above different multiplying, the radius of the centre distance converter 9 rotation axis center lines of the projection lens 5 of described two above different multiplying equates, the projection lens 5 of five different multiplying is installed on the converter 9.
A precise mobile platform 10 is in order to carrying light sensor 11.
Coaxial optical alignment detection system by the different projection lens of different multiplying, in the embodiment shown in Figure 2, this system comprises a coaxial optical wavelength beam splitter 6 by the different projection lens of different multiplying, and optical wavelength beam splitter 6 upper vertical are provided with and comprise the optical imaging system that detects beam splitter 12, detects lens 13 and photaesthesia detector 8; Detect beam splitter 12 outsides, with the optical wavelength beam splitter 6 coaxial contraposition focusing light sources 7 that are equipped with.
The optical alignment detection system comprises optical wavelength beam splitter 6, contraposition focusing light source 7 and the optical imaging system 8 that comprises detection beam splitter 12, detection lens 13 and photaesthesia detector 8.At each projection lens 5 of changing certain enlargement ratio, before exposure, the optical alignment detection system projects to the contraposition focusing light source 7 that is different from exposure wavelength on the light sensor by wave length beam splitting device 6, by fixing telltale mark on projection lens 5 search and the detection light sensor, and, obtain the accurate spatial positional information of projection lens 5 with respect to light sensor by Computer Processing.By accurate space orientation, can guarantee that the exposure figure of the projection lens of different enlargement ratios can be realized seamless connectivity, the exemplary plot of seeing Fig. 3 integrative type direct-writing photo-etching on the light sensor surface to the projection lens of different enlargement ratios.
Claims (4)
1. integrative type direct-writing photo-etching device, the light source (1) that comprises an illumination pattern generator, an optical light-collecting system (2) that is used to provide illumination beam, a programmable pattern generator (3), a projection optical system, the precise mobile platform of a mobile photaesthesia substrate (10); Wherein the coaxial correspondence of light source (1) and optical light-collecting system (2) is located at programmable pattern generator (3) one sides, and projection optical system comprises lens or lens combination (4) and projection lens (5), it is characterized in that:
Be provided with catoptron (14) between lens or lens combination (4) and the projection lens (5),
The converter (9) that also comprises the projection lens of a different multiplying, converter (9) is a plate-like, be located on the frame by rotation axis, converter (9) is provided with the projection lens (5) of two above different multiplying, and the radius of centre distance converter (9) the rotation axis center line of the projection lens of described two above different multiplying (5) equates;
Also comprise an optical alignment detection system, described system comprise with converter (9) on the coaxial optical wavelength beam splitter (6) of projection lens (5), optical wavelength beam splitter (6) one sides are coaxial to be provided with and to detect imaging len (13) and photaesthesia detector (8).
2. integrative type direct-writing photo-etching device according to claim 1 is characterized in that: described light source (1) is a LED source, or is arc lamp, or is laser instrument.
3. integrative type direct-writing photo-etching device according to claim 1, it is characterized in that: be provided with between the optical wavelength beam splitter (6) of described optical alignment detection system and the detection imaging len (13) and detect beam splitter (12), detect beam splitter (12) one sides and be provided with contraposition focusing light source (7).
4. integrative type direct-writing photo-etching device according to claim 1 is characterized in that: described converter (9) is provided with the projection lens (5) of five different multiplying.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNU2007200378059U CN201083959Y (en) | 2007-05-23 | 2007-05-23 | Integrated type direct-writing lithographic equipment |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNU2007200378059U CN201083959Y (en) | 2007-05-23 | 2007-05-23 | Integrated type direct-writing lithographic equipment |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN201083959Y true CN201083959Y (en) | 2008-07-09 |
Family
ID=39626430
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CNU2007200378059U Expired - Lifetime CN201083959Y (en) | 2007-05-23 | 2007-05-23 | Integrated type direct-writing lithographic equipment |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN201083959Y (en) |
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102207689A (en) * | 2011-05-20 | 2011-10-05 | 合肥芯硕半导体有限公司 | Alignment system and align mark precision extraction method of write-through lithography machine |
| CN102314097A (en) * | 2011-09-19 | 2012-01-11 | 合肥芯硕半导体有限公司 | Method of calibrating spatial position between spatial light modulator center and camera center |
| CN102770811A (en) * | 2010-02-25 | 2012-11-07 | Asml荷兰有限公司 | Lithographic apparatus and device manufacturing method |
| CN102844713A (en) * | 2010-02-23 | 2012-12-26 | Asml荷兰有限公司 | Lithographic apparatus and device manufacturing method |
| CN103472685A (en) * | 2013-09-13 | 2013-12-25 | 苏州微影光电科技有限公司 | Synchronizer, scanning type laser imaging system and synchronizing method |
| CN107894665A (en) * | 2017-11-03 | 2018-04-10 | 西安炬光科技股份有限公司 | A kind of method, apparatus and system for realizing hot spot conversion |
-
2007
- 2007-05-23 CN CNU2007200378059U patent/CN201083959Y/en not_active Expired - Lifetime
Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102844713A (en) * | 2010-02-23 | 2012-12-26 | Asml荷兰有限公司 | Lithographic apparatus and device manufacturing method |
| CN102770811A (en) * | 2010-02-25 | 2012-11-07 | Asml荷兰有限公司 | Lithographic apparatus and device manufacturing method |
| US9041911B2 (en) | 2010-02-25 | 2015-05-26 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
| CN102207689A (en) * | 2011-05-20 | 2011-10-05 | 合肥芯硕半导体有限公司 | Alignment system and align mark precision extraction method of write-through lithography machine |
| CN102207689B (en) * | 2011-05-20 | 2013-03-13 | 合肥芯硕半导体有限公司 | Alignment system and align mark precision extraction method of write-through lithography machine |
| CN102314097A (en) * | 2011-09-19 | 2012-01-11 | 合肥芯硕半导体有限公司 | Method of calibrating spatial position between spatial light modulator center and camera center |
| CN103472685A (en) * | 2013-09-13 | 2013-12-25 | 苏州微影光电科技有限公司 | Synchronizer, scanning type laser imaging system and synchronizing method |
| CN107894665A (en) * | 2017-11-03 | 2018-04-10 | 西安炬光科技股份有限公司 | A kind of method, apparatus and system for realizing hot spot conversion |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN101126905B (en) | Direct-writing lithography device with focusing device | |
| US8797510B2 (en) | Gradient refractive index lens array projection exposure | |
| US7932993B2 (en) | Divided sub-image array scanning and exposing system | |
| EP2359194B1 (en) | Image reading and writing using a complex two-dimensional interlace scheme | |
| CN101226343A (en) | Method for improving photolithography exposure energy homogeneity using grey level compensation | |
| CN201083959Y (en) | Integrated type direct-writing lithographic equipment | |
| CN100492176C (en) | Phase control and compensation process of digital optical lithography | |
| CN209297103U (en) | Digitize dual surface lithography or exposure system | |
| KR20050058520A (en) | Continuous direct-write optical lithography | |
| CN109774128B (en) | Photoetching and printing integrated equipment based on DMD and construction method thereof | |
| CN201083960Y (en) | Direct-writing lithographic equipment | |
| KR20100030999A (en) | Maskless lithographic apparatus and method of compensating rotational alignment error of exposure head of the same | |
| JP4676205B2 (en) | Exposure apparatus and exposure method | |
| US6178006B1 (en) | Photoplotting method and an arrangement for plotting a computer-stored raster image on a plane, photosensitive record carrier | |
| KR20120038801A (en) | Masklees exposure device having a spatial filter with the phase shifter-pattern and method thereof | |
| JP3799614B2 (en) | Exposure equipment | |
| CN101317133A (en) | Lithographic method for maskless pattern transfer onto a photosensitive substrate | |
| CN103890565A (en) | Exposure apparatus and method for the patterned exposure of a light-sensitive layer | |
| CN100561357C (en) | Direct-write light scribing device with Focusing mechanism | |
| CN100561356C (en) | Integrative type direct-writing photo-etching method | |
| CN202472238U (en) | Light energy monitoring system for lithography system | |
| CN101813893B (en) | Method for calibrating exposure energy demand distribution by adopting exposure mode | |
| CN1614514A (en) | Lithographic apparatus and device manufacturing method | |
| CN201083961Y (en) | Direct-writing lithographic equipment with focusing device | |
| CN103226294A (en) | Lithography system and method for improving exposure pattern position accuracy |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| CX01 | Expiry of patent term | ||
| CX01 | Expiry of patent term |
Granted publication date: 20080709 |