TWI533094B - Lithographic apparatus and device manufacturing method - Google Patents

Description

Microlithography device and component manufacturing method

The present invention relates to a lithography apparatus, a programmable patterning element, and a component manufacturing method.

A lithography device is a machine that applies a desired pattern to a portion of a substrate or substrate. The lithography apparatus can be used, for example, in the fabrication of integrated circuits (ICs), flat panel displays, and other components or structures having fine features. In conventional lithography devices, patterned elements, which may be referred to as reticle or proportional reticle, may be used to create circuit patterns corresponding to individual layers of an IC, flat panel display, or other component. This pattern can be transferred, for example, onto a portion of the substrate (eg, a germanium wafer or glass sheet) via imaging onto a layer of radiation-sensitive material (resist) provided on the substrate.

Instead of a circuit pattern, the patterned elements can be used to create other patterns, such as color filter patterns or dot matrices. Instead of a conventional mask, the patterned elements can comprise a patterned array comprising an array of individually controllable devices that produce circuitry or other suitable patterns. An advantage of this "maskless" system over conventional mask-based systems is that the pattern can be provided and/or changed more quickly and at less cost.

Thus, a maskless system includes programmable patterning elements (eg, spatial light modulators, contrast elements, etc.). The programmable patterned elements are programmed (eg, electronically or optically) to form a desired patterned beam using an array of individually controllable devices. Types of programmable patterning elements include micromirror arrays, liquid crystal display (LCD) arrays, grating light valve arrays, and the like.

There is a need, for example, to provide a flexible, low cost lithography apparatus that includes a programmable patterning element.

In one embodiment, a lithography apparatus is disclosed, the lithography apparatus comprising: a modulator configured to expose an exposed area of a substrate to a plurality of light beams modulated according to a desired pattern And a projection system configured to project the modulated beam onto the substrate. The modulator is moveable relative to the exposure region, and/or the projection system can have a lens array for receiving the plurality of beams, the lens array being movable relative to the exposure region.

In one aspect of the invention, the maskless lithography apparatus can, for example, be provided with an optical cylinder capable of producing a pattern onto a target portion of a substrate. The optical cylinder can be: a self-emissive contrast element configured to emit a radiation beam; and a projection system configured to project at least a portion of the beam onto the target portion . The device can be provided with an actuator configured to move the optical cylinder or a portion thereof relative to the substrate. Thereby, the movement of the light beam relative to one of the substrates can be achieved.

In the lithography apparatus, a timing between the movement of the portion of the optical cylinder and the operation of the self-emissive contrast element can be related to the pattern to a correct projection system on the substrate. There is a need to provide an improved lithography apparatus and method.

According to an embodiment of the invention, a lithography apparatus is provided, the lithography apparatus comprising: an optical cylinder configured to generate a pattern on a target portion of a substrate, the optical cylinder comprising: a control device configured to provide a light beam; and a projection system configured to project the light beam onto the target portion; an actuator configured to be relatively Moving at least a portion of the optical cylinder on the substrate; a metrology system configured to measure a position of the at least one portion of the optical cylinder; and a controller configured to drive The controllable device has an output signal of one of the measurement systems.

According to an embodiment of the present invention, there is provided a method of fabricating a component, the method of fabricating a method comprising: generating a pattern onto a target portion of a substrate by an optical cylinder, the generating comprising: providing a beam using a controllable device Projecting the beam onto the target portion by a projection system; and moving at least a portion of the optical cylinder relative to the substrate; measuring a position of the at least one portion of the optical cylinder by a metrology system; and responding The controllable device is driven by a position signal at one of the measurement systems.

According to an embodiment of the present invention, a computer product having machine executable instructions is provided, the instructions being executable by a machine to perform a method, the method comprising: generating a pattern to a substrate by an optical cylinder a target portion comprising: using a controllable device to provide a light beam; projecting the light beam onto the target portion by a projection system; and moving at least a portion of the optical cylinder relative to the substrate; A measurement system measures a position of the at least one portion of the optical cylinder; and drives the controllable device in response to a position signal of the measurement system.

The embodiments of the present invention are described in the accompanying drawings, and are in the <RTIgt; In the drawings, like element symbols may indicate the same or functionally similar devices.

One or more embodiments of a matte lithography apparatus, a maskless lithography method, a programmable patterning element, and other devices, articles, and methods are described herein. In one embodiment, a low cost and/or flexible maskless lithography apparatus is provided. Because the lithography device is reticle-free, there is no need for a conventional reticle to expose, for example, an IC or flat panel display. Similarly, one or more rings are not required for package applications; the programmable patterning elements provide a digital edge processing "loop" for package applications to avoid edge projection. A maskless (digital patterning) enables use with a flexible substrate.

In an embodiment, the lithography apparatus can have a super-non-critical application. In an embodiment, the lithography apparatus can have 0.1 micron resolution, for example, 0.5 micron resolution or 1 micron resolution. In an embodiment, the lithography apparatus can have 20 micron resolution, for example, 10 micron resolution or 5 micron resolution. In an embodiment, the lithography apparatus can have a resolution of from ~0.1 microns to 10 microns. In an embodiment, the lithography apparatus can have 50 nm stack, for example, 100 nm stack, 200 nm stack or 300 nm stack. In an embodiment, the lithography apparatus can have 500 nm stack, for example, 400 nm stack, 300 nm stack or 200 nm stack. These stacking values and resolution values may be independent of substrate size and material.

In an embodiment, the lithography apparatus is highly flexible. In one embodiment, the lithography apparatus is scalable for substrates of different sizes, types, and characteristics. In an embodiment, the lithography apparatus has a virtual infinite field size. Thus, the lithography apparatus can implement multiple applications (eg, ICs, flat panel displays, packages, etc.) using a single lithography apparatus or using multiple lithography apparatus (using a largely common lithography apparatus platform). In an embodiment, the lithography apparatus allows automated work to be produced to provide flexible manufacturing. In an embodiment, the lithography apparatus provides 3D integration.

In an embodiment, the lithography apparatus is low cost. In one embodiment, only conventional off-the-shelf components (eg, radiation emitting diodes, simple movable substrate holders, and lens arrays) are used. In an embodiment, pixel grid imaging is used to implement simple projection optics. In one embodiment, a substrate holder having a single scan orientation is used to reduce cost and/or reduce complexity.

FIG. 1 schematically depicts a lithographic projection apparatus 100 in accordance with an embodiment of the present invention. Device 100 includes a patterning element 104, an object holder 106 (eg, an object table (eg, a substrate table)), and a projection system 108.

In an embodiment, the patterning element 104 includes a plurality of individual controllable devices 102 to modulate the radiation to apply a pattern to the beam 110. In one embodiment, the positions of the plurality of individual controllable devices 102 can be fixed relative to the projection system 108. However, in an alternative configuration, a plurality of individual controllable devices 102 can be coupled to a positioning component (not shown) to accurately position one or more of the individually controllable devices based on particular parameters. (eg, relative to projection system 108).

In an embodiment, the patterned element 104 is a self-emissive contrast element. This patterning element 104 eliminates the need for a radiation system that can reduce, for example, the cost and size of the lithography apparatus. For example, each of the individually controllable devices 102 is a radiation emitting diode such as a light emitting diode (LED), an organic LED (OLED), a polymer LED (PLED), or a laser diode ( For example, solid state laser diodes). In one embodiment, each of the individually controllable devices 102 is a laser diode. In one embodiment, each of the individually controllable devices 102 is a blue-violet laser diode (eg, Sanyo Model DL-3146-151). These two-pole systems are supplied by companies such as Sanyo, Nichia, Osram and Nitride. In an embodiment, the diode emits radiation having a wavelength of about 365 nanometers or about 405 nanometers. In an embodiment, the diode can provide an output power selected from the range of 0.5 milliwatts to 100 milliwatts. In one embodiment, the size of the laser diode (bare die) is selected from the range of 250 microns to 600 microns. In an embodiment, the laser diode has an emission region selected from the range of 1 micrometer to 5 micrometers. In an embodiment, the laser diode has a divergence angle selected from the range of 7 degrees to 44 degrees. In one embodiment, the patterned element 104 has about 1 x 10 ⁵ diodes having a total brightness to provide greater than or equal to about 6.4 x 10 ⁸ W/(m ² .sr). Configuration (eg, emission area, divergence angle, output power, etc.).

In one embodiment, the self-emissive contrast element includes more individual addressable devices 102 than the individual addressable devices required to allow for redundancy when another controllable device 102 fails to operate or is not properly operated. The individual controllable device 102. In an embodiment, redundant individual controllable devices may be advantageously employed in embodiments that use, for example, the movable individually controllable device 102 discussed below with respect to FIG.

In one embodiment, the individual controllable devices 102 of the self-emissive contrast element operate in a steep portion of the power/forward current curve of the individual controllable device 102 (eg, a laser diode). This situation can be more efficient and results in less power consumption/heat. In one embodiment, each of the other controllable devices has an optical output of at least 1 milliwatt, such as at least 10 milliwatts, at least 25 milliwatts, at least 50 milliwatts, at least 100 milliwatts, or at least 200, when in use. Milliwatts. In one embodiment, each of the other controllable devices has an optical output of less than 300 milliwatts, less than 250 milliwatts, less than 200 milliwatts, less than 150 milliwatts, less than 100 milliwatts, less than 50 milliwatts, when in use. Less than 25 milliwatts or less than 10 milliwatts. In one embodiment, the power consumption per programmable patterning element used to operate the individually controllable device when in use is less than 10 kilowatts, for example, less than 5 kilowatts, less than 1 kilowatt, or less than 0.5 kilowatts. special. In one embodiment, each programmable patterning element used to operate the individually controllable device consumes at least 100 watts of power, for example, at least 300 watts, at least 500 watts, or at least 1 kilowatt, when in use.

The lithography apparatus 100 includes an object holder 106. In this embodiment, the article holder includes an object table 106 to hold the substrate 114 (eg, a resist coated wafer or glass substrate). The article table 106 can be movable and coupled to the positioning element 116 to accurately position the substrate 114 in accordance with certain parameters. For example, the positioning element 116 can accurately position the substrate 114 relative to the projection system 108 and/or the patterned element 104. In one embodiment, movement of the article table 106 can be accomplished with positioning elements 116 that include long stroke modules (rough positioning) and (as appropriate) short stroke modules (fine positioning) that are not explicitly depicted in FIG. In one embodiment, the device has at least no short stroke modules for moving the article table 106. A similar system can be used to locate the individual controllable devices 102. It will be appreciated that, or in addition, the beam 110 can be movable, while the article table 106 and/or the individual controllable device 102 can have a fixed position to provide the desired relative movement. This configuration can help limit the size of the device. In embodiments that may be suitable, for example, in the manufacture of flat panel displays, the article table 106 may be stationary, and the positioning elements 116 are configured to move the substrate 114 relative to (eg, throughout) the object table 106. For example, the article table 106 can be provided with a system for scanning the substrate 114 at a substantially constant velocity across the substrate 114. During this process, the article table 106 can have a plurality of openings on the flat uppermost surface through which gas is fed to provide a gas cushion capable of supporting the substrate 114. This air cushion is often referred to as a gas bearing arrangement. The substrate 114 is moved throughout the object table 106 using one or more actuators (not shown) that are capable of accurately positioning the substrate 114 relative to the path of the beam 110. Alternatively, the substrate 114 can be moved relative to the article table 106 by selectively starting and stopping the transfer of gas through the opening. In one embodiment, the article holder 106 can be a roll system for scrolling the substrate, and the positioning member 116 can be a motor for rotating the reel system to provide the substrate to the object table 106.

Projection system 108 (eg, a quartz and/or CaF ₂ lens system or a catadioptric system comprising lens devices made of such materials, or a mirror system) can be used to pattern the modulation by individual controllable devices 102 The beam is projected onto a target portion 120 (eg, one or more dies) of the substrate 114. Projection system 108 can image the pattern provided by a plurality of individual controllable devices 102 such that the pattern is coherently formed on substrate 114. Alternatively, projection system 108 can project an image of a secondary source for which a plurality of devices of individually controllable device 102 act as a light shield.

In this aspect, the projection system can include a focusing device or a plurality of focusing devices (generally referred to herein as lens arrays), such as a microlens array (referred to as MLA) or a Fresnel lens array, For example, to form a secondary source and image the spot onto the substrate 114. In an embodiment, the lens array (eg, MLA) comprises at least 10 focusing devices, eg, at least 100 focusing devices, at least 1,000 focusing devices, at least 10,000 focusing devices, at least 100,000 focusing devices, or at least 1,000,000 Focus on the device. In an embodiment, the number of individual controllable devices in the patterned elements is equal to or greater than the number of focusing devices in the lens array. In one embodiment, the lens array includes a focusing device that is optically associated with one or more of the individual controllable devices in the array of individually controllable devices, for example, only in an array of individually controllable devices One of the individual controllable devices is optically associated, or with 2 or more of the individual controllable devices in the array of individually controllable devices (eg, 3 or more, 5 or 5) 10 or more, 10 or more, 20 or 20 or more, 25 or 25 or more, 35 or 35 or more, or 50 or more are optically associated; in an embodiment, The focusing device is optically associated with less than 5,000 individual controllable devices (eg, 2,500 or less, 1,000 or less, 500 or less, or 100 or less). In one embodiment, the lens array includes more than one focusing device (eg, more than 1,000, most, or all), one or more of the one or more focusing devices and individual controllable devices in the array of individually controllable devices They are optically related.

In one embodiment, the lens array is movable, for example, at least in a direction to and from the substrate by using one or more actuators. Being able to move the lens array to and away from the substrate allows for focus adjustment, for example, without having to move the substrate. In one embodiment, individual lens devices in the lens array (eg, each individual lens device in the lens array) are movable at least in a direction to and from the substrate (eg, for use on a non-planar substrate) Domain focus adjustment or to bring each optical cylinder into the same focus distance).

In one embodiment, the lens array comprises plastic focusing devices (which may be easily fabricated (eg, injection molded) and/or affordable), wherein, for example, the wavelength of the radiation is greater than or equal to about 400 Nano (for example, 405 nm). In one embodiment, the wavelength of the radiation is selected from the range of from about 400 nanometers to about 500 nanometers. In an embodiment, the lens array comprises a quartz focusing device. In an embodiment, each or a plurality of the focusing devices may be an asymmetrical lens. The asymmetry may be the same for each of the plurality of focusing devices, or may be for one or more focusing devices of the plurality of focusing devices as compared to one or more different focusing devices for the plurality of focusing devices Different. The asymmetrical lens can facilitate the conversion of the oval radiation output into a circular projection spot or the conversion of a circular projection spot into an oval radiation output.

In an embodiment, the focusing device has a high numerical aperture (NA) that is configured to project radiation onto the substrate outside of the focus to obtain a low NA of the system. Higher NA lenses may be more economical, more general, and/or better quality than commercially available low NA lenses. In one embodiment, the low NA is less than or equal to 0.3, and in one embodiment is 0.18, 0.15, or 0.15 or less. Thus, a higher NA lens has an NA greater than the design NA of the system, for example, greater than 0.3, greater than 0.18, or greater than 0.15.

Although the projection system 108 is separate from the patterning element 104 in one embodiment, this need not be the case. Projection system 108 can be integral with patterned element 104. For example, a lens array block or plate can be attached to the patterned element 104 (integral with the patterned element 104). In an embodiment, the lens arrays may be in the form of individual spatially separated lenslets, each lenslet being attached to an individually addressable device of patterned element 104 (integral with an individually addressable device of patterned element 104), as follows Discussed in more detail.

Optionally, the lithography apparatus can include a radiation system to supply radiation (eg, ultraviolet (UV) radiation) to a plurality of individual controllable devices 102. If the patterned element is the radiation source itself (eg, a laser diode array or an LED array), the lithography device can be designed to be a radiation-free system, ie, without a radiation source other than the patterned element itself, or at least No simplified radiation system.

The radiation system includes an illumination system (illuminator) configured to receive radiation from a radiation source. The illumination system includes one or more of the following: a radiation delivery system (eg, a suitable guiding mirror); a radiation conditioning element (eg, a beam of light) An adjustment element that is used to set an angular intensity distribution of the radiation (typically, at least an outer radial extent and/or an inner radial extent of the intensity distribution in the pupil plane of the illuminator can be adjusted (usually referred to as σ external and σ internal)); illuminator; and / or concentrator. The illumination system can be used to adjust the radiation to be provided to the individual controllable devices 102 to have a desired uniformity and intensity distribution in the cross section of the radiation. The illumination system can be configured to divide the radiation into a plurality of sub-beams, which can each, for example, be associated with one or more of a plurality of individual controllable devices. A two-dimensional diffraction grating can be used, for example, to divide radiation into sub-beams. In the present description, the term "radiation beam" encompasses, but is not limited to, the case where the beam contains a plurality of such radiation sub-beams.

The radiation system can also include a radiation source (e.g., an excimer laser) to generate radiation for supply to a plurality of individual controllable devices 102 or by a plurality of individual controllable devices 102. For example, when the radiation source is a quasi-molecular laser, the radiation source and lithography apparatus 100 can be separate entities. In such cases, the source of radiation is not considered to form part of the lithography apparatus 100, and the radiation is transmitted from the source of radiation to the illuminator. In other cases, for example, when the source of radiation is a mercury lamp, the source of radiation may be an integral part of the lithography apparatus 100. It should be understood that two such scenarios are contemplated within the scope of the present invention.

In an embodiment, the radiation source (which in one embodiment may be a plurality of individual controllable devices 102) may provide radiation having a wavelength of at least 5 nanometers, for example, a wavelength of at least 10 nanometers, at least 50 nanometers. At least 100 nm, at least 150 nm, at least 175 nm, at least 200 nm, at least 250 nm, at least 275 nm, at least 300 nm, at least 325 nm, at least 350 nm or at least 360 nm . In one embodiment, the radiation has a wavelength of up to 450 nm, for example, a wavelength of at most 425 nm, at most 375 nm, at most 360 nm, at most 325 nm, at most 275 nm, at most 250 nm, at most 225 nm, up to 200 nm or up to 175 nm. In one embodiment, the radiation has a wavelength comprising 436 nm, 405 nm, 365 nm, 355 nm, 248 nm, 193 nm, 157 nm, 126 nm, and/or 13.5 nm. In an embodiment, the radiation comprises a wavelength of about 365 nanometers or about 355 nanometers. In an embodiment, the radiation comprises a wide wavelength band, for example, covering 365 nm, 405 nm, and 436 nm. A 355 nm laser source can be used. In one embodiment, the radiation has a wavelength of about 405 nm.

In one embodiment, between 0° and 90° (eg, between 5° and 85°, between 15° and 75°, between 25° and 65°, or at 35°) The angle between 55° directs radiation from the illumination system to the patterned element 104. Radiation from the illumination system can be provided directly to the patterning element 104. In an alternative embodiment, the radiation can be directed from the illumination system to the patterning element 104 by a beam splitter (not shown) that is configured such that the beam is initially reflected by the beam splitter and will Radiation is directed to the patterning element 104. The patterning element 104 modulates the beam and reflects the beam back to the beam splitter, which transmits the modulated beam toward the substrate 114. However, it should be appreciated that alternative configurations can be used to direct radiation to the patterned element 104 and then to the substrate 114. In particular, if a transmissive patterned element 104 (eg, an LCD array) or patterned element 104 is self-emissive (eg, a plurality of diodes), a lighting system configuration may not be required.

In operation of the lithography apparatus 100 (where the patterned element 104 is not radiation-emitting (eg, including LEDs)), the radiation is incident on the patterned element 104 from a radiation system (illumination system and/or radiation source) (eg, A plurality of individual controllable devices are on the basis of modulation by the patterning element 104. The patterned beam 110 is passed through the projection system 108 after it has been generated by the plurality of individually controllable devices 102, and the projection system 108 focuses the beam 110 onto the target portion 120 of the substrate 114.

By means of the positioning element 116 (and (as appropriate) the position sensor 134 on the base 136 (eg, an interferometric measuring element that receives the interferometric measuring beam 138, a linear encoder or a capacitive sensor), The substrate 114 is moved, for example, to position different target portions 120 in the path of the beam 110. In use, the positioning elements for the plurality of individually controllable devices 102 can be used to accurately correct the position of the plurality of individually controllable devices 102 relative to the path of the beam 110, for example, during scanning.

Although lithography apparatus 100 in accordance with an embodiment of the present invention is described herein as being used to expose a resist on a substrate, it will be appreciated that apparatus 100 can be used to project patterned light beam 110 for use in resistless micro-resistance. Used in the movie.

As depicted herein, the lithography apparatus 100 is of a reflective type (eg, using reflective individually controllable devices). Alternatively, the device can be of a transmissive type (eg, using a transmissive individually controllable device).

The depicted device 100 can be used in one or more modes, for example: 1. In a step mode, the individual controllable device 102 and substrate are rendered when the entire patterned radiation beam 110 is projected onto the target portion 120 at a time. 114 remains substantially stationary (i.e., a single static exposure). Next, the substrate 114 is displaced in the X and/or Y direction such that different target portions 120 can be exposed to the patterned radiation beam 110. In step mode, the maximum size of the exposure field limits the size of the target portion 120 imaged in a single static exposure.

2. In the scan mode, upon projecting the patterned radiation beam 110 onto the target portion 120, the individual controllable devices 102 and the substrate 114 (i.e., a single dynamic exposure) are scanned synchronously. The speed and direction of the substrate relative to the individually controllable device can be determined by the magnification (reduction ratio) and image reversal characteristics of the projection system PS. In the scan mode, the maximum size of the exposure field limits the width of the target portion in a single dynamic exposure (in the non-scanning direction), and the length of the scanning motion determines the height of the target portion (in the scanning direction).

3. In the pulse mode, the individual controllable device 102 is held substantially stationary and the entire pattern is projected onto the substrate 114 using pulsations (e.g., by pulsed radiation sources or by pulsing individual controllable devices). Part 120. The substrate 114 is moved at a substantially constant rate such that the patterned beam 110 is scanned across the substrate 114 to scan a line. The pattern provided by the individual controllable devices is updated between pulses as needed and the pulses are timed such that the sequential target portions 120 are exposed at desired locations on the substrate 114. Thus, the patterned beam 110 can be scanned across the substrate 114 to expose a complete pattern of strips for the substrate 114. This procedure is repeated until the entire substrate 114 has been exposed line by line.

4. In the continuous scan mode, substantially the same as the pulse mode, except that the substrate 114 is scanned at a substantially constant rate relative to the modulated radiation beam B, and the patterned beam 110 is scanned across the substrate 114. The pattern on the individual controllable device array is updated as the substrate 114 is exposed. An substantially constant or pulsed source of radiation that is synchronized to a pattern on an array of individually controllable devices can be used.

Combinations and/or variations or completely different modes of use of the modes of use described above may also be used.

2 depicts a schematic top view of a lithography apparatus in accordance with an embodiment of the present invention for a wafer (eg, a 300 mm wafer). As shown in FIG. 2, the lithography apparatus 100 includes a substrate stage 106 to hold the wafer 114. A positioning element 116 for moving the substrate stage 106 in at least the X direction is associated with the substrate stage 106. Depending on the situation, the positioning element 116 can move the substrate stage 106 in the Y and/or Z direction. The positioning element 116 can also rotate the substrate stage 106 about the X direction, the Y direction, and/or the Z direction. Thus, the positioning element 116 can provide motion in up to 6 degrees of freedom. In one embodiment, substrate stage 106 provides motion only in the X direction, which has the advantage of lower cost and less complexity. In an embodiment, substrate stage 106 includes relay optics.

The lithography apparatus 100 further includes a plurality of individual addressable devices 102 disposed on the frame 160. The frame 160 can be mechanically isolated from the substrate table 106 and its positioning elements 116. Mechanical isolation can be provided, for example, by attaching the frame 160 to the ground or a secure base separately from the frame 160 for the substrate table 106 and/or its positioning elements 116. Alternatively or in addition, a damper may be provided between the frame 160 and the structure to which the frame 160 is coupled, whether the structure is a floor, a solid base, or a frame that supports the substrate table 106 and/or its positioning elements 116.

In this embodiment, each of the individual addressable devices 102 is a radiation emitting diode, such as a blue-violet laser diode. As shown in FIG. 2, the individual addressable devices 102 can be configured as an array of at least three separate individually addressable devices 102 extending in the Y direction. In one embodiment, the array of individual addressable devices 102 are interleaved with the array of adjacent individually addressable devices 102 in the X direction. The lithography apparatus 100 (particularly the individual addressable device 102) can be configured to provide pixel grid imaging as described in greater detail herein.

Each of the arrays of individually addressable devices 102 can be part of a separate optical engine assembly that can be fabricated as a unit for ease of replication. Additionally, the framework 160 can be configured to be expandable and configurable to facilitate the use of any number of such optical engine components. The optical engine assembly can include a combination of an array of individual addressable devices 102 and a lens array 170 (see, for example, Figure 8). For example, in FIG. 2, three optical engine assemblies are depicted (with one associated lens array 170 below each individual individually addressable device 102 array). Thus, in an embodiment, a multi-cylindrical optical configuration can be provided in which each optical engine forms a cylinder.

Additionally, the lithography apparatus 100 includes an alignment sensor 150. The alignment sensor is used to determine the alignment between the individual addressable device 102 and the substrate 114 before and/or during exposure of the substrate 114. The result of the alignment sensor 150 can be used by the controller of the lithography apparatus 100 to control, for example, the positioning element 116 to position the substrate stage 106 to improve alignment. Alternatively or in addition, the controller can control, for example, positioning elements associated with the individual addressable devices 102 to locate one or more of the individually addressable devices 102 to improve alignment. In an embodiment, the alignment sensor 150 can include a pattern recognition functionality/software to perform the alignment.

Alternatively or in addition, the lithography apparatus 100 includes a level sensor 150. The level sensor 150 is used to determine whether the substrate stage 106 is at a level relative to the projection of the pattern from the individual addressable device 102. The level sensor 150 can determine the level before and/or during exposure of the substrate 114. The result of the level sensor 150 can be used by the controller of the lithography apparatus 100 to control, for example, the positioning element 116 to position the substrate stage 106 to improve leveling. Alternatively or in addition, the controller can control, for example, positioning elements associated with projection system 108 (e.g., lens arrays) to position devices of projection system 108 (e.g., lens arrays) to improve leveling. In one embodiment, the level sensor can be operated by projecting an ultrasonic beam onto the substrate stage 106 and/or by projecting an electromagnetic radiation beam onto the substrate stage 106.

In an embodiment, the results from the alignment sensor and/or the level sensor can be used to modify the pattern provided by the individual addressable device 102. The pattern can be modified to correct, for example, distortion caused by, for example, optics (if present) between the individual addressable device 102 and the substrate 114, irregularities in the positioning of the substrate 114, unevenness of the substrate 114 ,and many more. Thus, results from alignment sensors and/or level sensors can be used to modify the projected pattern to achieve nonlinear distortion correction. Nonlinear distortion correction can have flexible displays for, for example, that may not have consistent linear or nonlinear distortion.

In operation of the lithography apparatus 100, the substrate 114 is loaded onto the substrate stage 106 using, for example, a robotic handler (not shown). Substrate 114 is then displaced in the X direction below frame 160 and individual addressable device 102. Substrate 114 is measured by level sensor and/or alignment sensor 150, and then substrate 114 is exposed to a pattern using individual addressable device 102. For example, the substrate 114 is scanned via the focal plane (image plane) of the projection system 108 while the sub-beams are at least partially turned on or off by the patterning element 104 and thus at least partially turned on or fully turned on or off. Image spot S (see, for example, Figure 12). Features corresponding to the pattern of the patterned elements 104 are formed on the substrate 114. The individual addressable device 102 can be operated, for example, to provide pixel grid imaging as discussed herein.

In an embodiment, the substrate 114 can be completely scanned in the positive X direction, and then the substrate 114 is scanned completely in the negative X direction. In this embodiment, for negative X-direction scanning, additional level sensors and/or alignment sensors 150 on opposite sides of the individual addressable device 102 may be required.

3 depicts a schematic top view of a lithography apparatus in accordance with an embodiment of the present invention for exposing a substrate in the manufacture of, for example, a flat panel display (eg, an LCD, an OLED display, etc.). As with the lithography apparatus 100 shown in FIG. 2, the lithography apparatus 100 includes a substrate stage 106 for holding the flat panel display substrate 114, and a positioning component 116 for positioning up to six degrees of freedom. Moving the substrate table 106; aligning the sensor 150, the alignment sensor 150 is used to determine the alignment between the individual addressable device 102 and the substrate 114; and the level sensor 150, the level sensor 150 is used To determine if the substrate 114 is at a level relative to the projection from the pattern of individual addressable devices 102.

The lithography apparatus 100 further includes a plurality of individual addressable devices 102 disposed on the frame 160. In this embodiment, each of the individual addressable devices 102 is a radiation emitting diode, such as a blue-violet laser diode. As shown in FIG. 3, the individual addressable devices 102 are configured as an array of several (eg, at least eight) statically separated individual addressable devices 102 extending in the Y direction. In an embodiment, the arrays are substantially stationary, that is, the arrays do not move significantly during projection. Additionally, in one embodiment, an array of individual addressable devices 102 are interleaved in an alternating pattern with adjacent arrays of individually addressable devices 102 in the X direction. The lithography apparatus 100 (particularly the individual addressable device 102) can be configured to provide pixel grid imaging.

In operation of the lithography apparatus 100, the flat panel display substrate 114 is loaded onto the substrate stage 106 using, for example, a robotic handler (not shown). Substrate 114 is then displaced in the X direction below frame 160 and individual addressable device 102. Substrate 114 is measured by level sensor and/or alignment sensor 150, and then substrate 114 is exposed to a pattern using individual addressable device 102. The individual addressable device 102 can be operated, for example, to provide pixel grid imaging as discussed herein.

4 depicts a schematic top view of a lithography apparatus in accordance with an embodiment of the present invention for a roll-type flexible display/electronic device. Like the lithography apparatus 100 shown in FIG. 3, the lithography apparatus 100 includes a plurality of individual addressable devices 102 disposed on the frame 160. In this embodiment, each of the individual addressable devices 102 is a radiation emitting diode, such as a blue-violet laser diode. In addition, the lithography apparatus includes: an alignment sensor 150 for determining alignment between the individual addressable device 102 and the substrate 114; and a level sensor 150, the level sensor 150 It is used to determine whether the substrate 114 is at a level relative to the projection of the pattern from the individual addressable device 102.

The lithography apparatus can also include an object holder having an object table 106 that moves throughout the object table 106. The substrate 114 is flexible and rolled onto a spool attached to the positioning element 116, which may be a motor for rotating the spool. In an embodiment, or in addition, the substrate 114 can be rolled from a reel attached to the positioning element 116, which can be a motor for rotating the reel. In one embodiment, there are at least two reels, one for the substrate to be rolled from, and the other for the substrate to be rolled onto. In an embodiment, if, for example, the substrate 114 is sufficiently rigid between the spools, there is no need to provide the article table 106. In this case, there will still be an object holder, for example one or more reels. In one embodiment, the lithography apparatus can provide a carrierless substrate (eg, carrier-less-foil (CLF)) and/or roll to roll manufacturing. In an embodiment, the lithography apparatus can provide sheet to sheet manufacturing.

In operation of the lithography apparatus 100, the flexible substrate 114 is rolled onto the reel in the X direction below the frame 160 and the individual addressable device 102 and/or the flexible substrate 114 is rolled from the reel. Substrate 114 is measured by level sensor and/or alignment sensor 150, and then substrate 114 is exposed to a pattern using individual addressable device 102. The individual addressable device 102 can be operated, for example, to provide pixel grid imaging as discussed herein.

FIG. 5 depicts a schematic top view of a lithography apparatus in accordance with an embodiment of the present invention having a movable individual addressable device 102. As with the lithography apparatus 100 shown in FIG. 2, the lithography apparatus 100 includes a substrate stage 106 for holding the substrate 114, and a positioning component 116 for moving the substrate in up to 6 degrees of freedom. The alignment sensor 150 is used to determine the alignment between the individual addressable device 102 and the substrate 114; and the level sensor 150, the level sensor 150 is used to determine Whether the substrate 114 is at a level relative to the projection from the pattern of individual addressable devices 102.

The lithography apparatus 100 further includes a plurality of individual addressable devices 102 disposed on the frame 160. In this embodiment, each of the individual addressable devices 102 is a radiation emitting diode, such as a laser diode (eg, a blue-violet laser diode). As shown in FIG. 5, the individual addressable devices 102 are configured as a plurality of separate arrays of individual addressable devices 102 that extend along the Y direction. Additionally, in one embodiment, a plurality of arrays of individual addressable devices 102 are interleaved in an X-direction in an alternating manner with adjacent arrays of individually addressable devices 102. The lithography apparatus 100 (particularly the individual addressable device 102) can be configured to provide pixel grid imaging. However, in an embodiment, the lithography apparatus 100 need not provide pixel grid imaging. Conversely, lithography apparatus 100 may project radiation of the diode onto the substrate in a manner that does not form individual pixels for projection onto the substrate but forms a substantially continuous image for projection onto the substrate.

In one embodiment, one or more of the plurality of individually addressable devices 102 are moveable to the one or more individually addressable devices for projecting an exposure region of all or a portion of the beam 110 with the one or more The individual addressable devices do not project between portions of the exposed area of any portion of the beam 110. In one embodiment, the one or more individual addressable devices 102 are radiation emitting elements that are turned on or at least partially turned on in the exposed region 204 (light shaded region in FIG. 5) (ie, the The radiation emitting elements emit radiation, and are turned off when located outside of the exposed area 204 (i.e., the radiation emitting elements do not emit radiation).

In one embodiment, one or more of the individual addressable devices 102 are radiation emitting elements that can be turned on in the exposed region 204 and outside of the exposed region 204. In this case, if, for example, radiation is not properly projected into the exposed area 204 by the one or more individual addressable devices 102, one or more individual addressable devices 102 can be turned on outside the exposed area 204 to provide Compensate for exposure. For example, referring to FIG. 5, one or more of the individual addressable devices 102 in an array opposite the exposed regions 204 can be turned on to correct for failed or improper radiation projections in the exposed regions 204.

In an embodiment, the exposed area 204 is an elongated line. In an embodiment, the exposed area 204 is a one-dimensional array of one or more individual addressable devices 102. In one embodiment, the exposed area 204 is a two-dimensional array of one or more individual addressable devices 102. In an embodiment, the exposed area 204 is elongated.

In an embodiment, each of the movable individually addressable devices 102 is detachable and not necessarily movable together as a component.

In one embodiment, one or more of the individual addressable devices are movable and, in use, move at least during projection beam 110 in a direction transverse to the direction of propagation of beam 110. For example, in one embodiment, one or more of the individual addressable devices 102 are radiating radiating elements that move in a direction substantially perpendicular to the direction of propagation of the beam 110 during projection of the beam 110.

In one embodiment, each of the arrays 200 is a laterally displaceable plate having a plurality of spatially separated individual addressable devices 102 disposed along the plate, as shown in FIG. In use, each plate translates along direction 208. In use, the motion of the individual addressable device 102 is suitably timed to be located in the exposed area 204 (shown as a heavily shaded area in FIG. 6) to project all or part of the beam 110. For example, in one embodiment, one or more of the individual addressable devices 102 are radiating radiating elements, and timed on or off of the individually addressable devices 102 such that one or more individual addressable devices 102 are It is turned on when in the exposed area 204 and turned off when it is outside the area 204. For example, in Figure 6(A), a plurality of two-dimensional radiation emitting diode arrays 200 are translated in direction 208 (the two arrays are in the positive direction 208 and the intermediate array between the two arrays is In the negative direction 208). The on or off of the radiation emitting diode 102 is time controlled such that the particular radiation emitting diode 102 of each array 200 is turned on when in the exposed region 204 and turned off when outside the region 204. Of course, when, for example, the array 200 reaches the travel end of the array, the array 200 can travel in the opposite direction, ie, the two arrays are in the negative direction 208 and the intermediate array between the two arrays is In the positive direction 208. In an additional example, in FIG. 6(B), a plurality of interleaved single-dimensional radiation emitting diode arrays 200 are alternated in direction 208 (alternating in positive direction 208 and negative direction 208). The on or off of the radiation emitting diode 102 is time controlled such that the particular radiation emitting diode 102 of each array 200 is turned on when in the exposed region 204 and turned off when outside the region 204. Of course, array 200 can travel in the opposite direction. In an additional example, in Figure 6(C), a single radiation emitting diode array 200 is translated in direction 208 (shown as one dimension, but need not be). The on or off of the radiation emitting diode 102 is time controlled such that the particular radiation emitting diode 102 of each array 200 is turned on when in the exposed region 204 and turned off when outside the region 204.

In one embodiment, each of the arrays 200 is a rotatable plate having a plurality of spatially separated individual addressable devices 102 disposed about the plate. In use, each plate rotates about its own axis 206, for example, in the direction indicated by the arrow in FIG. That is, the array 200 can be alternately rotated in a clockwise direction and a counterclockwise direction as shown in FIG. Alternatively, each of the arrays 200 can be rotated in a clockwise direction or in a counterclockwise direction. In one embodiment, array 200 is rotated a full turn. In one embodiment, array 200 rotates less than a full circle of arcs. In one embodiment, array 200 can be rotated about an axis extending in the X or Y direction if, for example, the substrate is scanned in the Z direction. In one embodiment, referring to FIG. 6(D), the individual addressable devices 102 of the array 200 can be disposed at the edges and projected in a radial direction outwardly toward the substrate 114. The substrate 114 can extend around at least a portion of the sides of the array 200. In this case, the array 200 is rotated about an axis extending in the X direction, and the substrate 114 is moved in the X direction.

In use, the motion of the individual addressable device 102 is suitably timed to be located in the exposed region 204 to project all or part of the beam 110. For example, in one embodiment, one or more of the individual addressable devices 102 are radiating radiating elements, and timed on or off of the individually addressable devices 102 such that one or more individual addressable devices 102 are It is turned on when in the exposed area 204 and turned off when it is outside the area 204. Thus, in an embodiment, the radiation emitting element 102 can be left open during motion, and then the particular radiation emitting element in the radiation emitting element 102 can be turned off in the exposed region 204. Appropriate shielding between the radiation emitting element 102 and the substrate and outside of the exposed area 204 may be required to shield the exposed area 204 from the radiation emitting element 102 that is turned on outside of the exposed area 204. Enabling the radiation emitting elements 102 to be uniformly turned on can promote the radiation emitting elements 102 to be at substantially uniform temperatures during use. In an embodiment, the radiation emitting element 102 can be kept off from time to time and one or more of the radiation emitting elements 102 can be turned on when in the exposed area 204.

In an embodiment, the rotatable plate can have the configuration shown in FIG. For example, in Figure 7(A), a schematic top view of a rotatable plate is shown. The rotatable plate can have an array 200 having a plurality of individual addressable device 102 sub-arrays 210 disposed about the plate (the rotatable plate is shown schematically around the plate as compared to the rotatable plate of Figure 5) A single array of individually addressable devices 102 is 200). In FIG. 7(A), sub-arrays 210 are shown as being staggered relative to each other such that one of the individual addressable devices 102 of one sub-array 210 is between two individual addressable devices 102 of another sub-array 210. However, the individual addressable devices 102 of the sub-array 210 can be aligned with one another. The individual addressable devices 102 can be rotated individually or together about an axis by the motor 216, which in this example extends through the motor 216 in the Z direction of Figure 7(A). Motor 216 can be attached to the rotatable plate and attached to the frame (eg, frame 160), or attached to the frame (eg, frame 160) and to the rotatable plate. In an embodiment, motor 216 (or, for example, a motor located elsewhere) may result in other movements of individual addressable devices 102 (either individually or together). For example, motor 216 can cause translation of one or more of individual addressable devices 102 in the X, Y, and/or Z directions. Alternatively or additionally, the motor 216 may cause rotation of the one or more individually addressable device 102 about the X direction and / or Y direction (i.e., R _x motion and / or R _y motion).

In the embodiment of the rotatable plate, which is schematically illustrated in FIG. 7(B) as a top view, the rotatable plate can have an opening 212 in its central region, wherein the array of individual addressable devices 102 is disposed in the opening 212. External board. Thus, for example, the rotatable plate can form an annular disk as shown in Figure 7(B), wherein the array of individual addressable devices 102 is configured around the disk. The opening can reduce the weight of the rotatable plate and/or facilitate cooling of the individually addressable device 102.

In an embodiment, the rotatable plate can be supported at the outer perimeter using the support 214. The support 214 can be a bearing such as a roller bearing or a gas bearing. Can by FIG 7 (A) to provide rotation of the motor 216 shown in (and / or other movement, e.g., in the X direction, Y direction and / or translation in the Z direction, and / or R _X movement, and / or R _y sports). Alternatively or additionally, the support 214 can include a motor to cause the individual addressable device 102 to rotate about the axis A (and/or provide other movements, such as translation in the X, Y, and/or Z directions, and/or R _x motion and / or R _y motion).

In one embodiment, referring to FIGS. 7(D) and 7(E), a rotatable plate having an array 200 of individual addressable devices 102 can be attached to the rotatable structure 218. The rotatable structure 218 is rotatable about the axis B by the motor 220. Additionally, the rotatable plate is rotatable relative to the rotatable structure 218 by the motor 216, which causes the rotatable plate to rotate about the axis A. In an embodiment, the axis of rotation A does not coincide with the axis of rotation B, and therefore, the axes are spatially separated as shown in Figures 7(D) and 7(E). In an embodiment, the axis of rotation A and the axis of rotation B are substantially parallel to each other. During use during exposure, both the rotatable structure 218 and the rotatable plate rotate. This rotation can be coordinated such that the individual addressable devices 102 in the exposed region 204 can be aligned substantially in a straight line. This situation can be compared to, for example, the embodiment of FIG. 5, in which the individual addressable devices 102 in the exposed regions 204 may not be aligned in a substantially straight line.

In the case of a mobile individually addressable device as described above, the number of individually addressable devices can be reduced by moving individual addressable devices into the exposed region 204 as needed. Therefore, the heat load can be reduced.

In one embodiment, more movable individual addressable devices may be provided than are theoretically required for movable individually addressable devices (e.g., on a rotatable plate). A possible advantage of this configuration is that one or more other movable individually addressable devices of the movable individually addressable device can be used instead if one or more of the movable individually addressable devices are interrupted or fail to operate. Alternatively or in addition, the additional movable individual addressable device may have the advantage of controlling the thermal load on the individual addressable device, as more externally addressable devices are present, there is an external exposure area 204 The more opportunities for a movable individual addressable device to cool down.

In an embodiment, the movable individual addressable device 102 is embedded in a material that includes low thermal conductivity. For example, the material can be a ceramic, such as cordierite or cordierite-based ceramics, and/or a glass-ceramic. In one embodiment, the movable individual addressable device 102 is embedded in a material that includes high thermal conductivity (eg, a metal, such as a relatively lightweight metal (eg, aluminum or titanium)).

In an embodiment, array 200 can include a temperature control configuration. For example, referring to FIG. 7(F), array 200 can have a fluid (eg, liquid) conductive channel 222 to deliver cooling fluid on array 200, near array 200, or through array 200 to cool the array. Channel 222 can be coupled to a suitable heat exchanger and pump 228 to circulate fluid through the passage. A supply 224 and a return 226 connected between the passage 222 and the heat exchanger and pump 228 facilitate fluid circulation and temperature control. A sensor 234 can be provided in, on or near the array to measure parameters of the array 200 that can be used to control, for example, the temperature of the fluid stream provided by the heat exchanger and the pump. In one embodiment, the sensor 234 can measure the expansion and/or contraction of the body of the array 200, which can be used to control the temperature of the fluid flow provided by the heat exchanger and the pump. This expansion and/or contraction can be representative of temperature. In an embodiment, the sensor 234 can be integrated with the array 200 (as shown by the sensor 234 in the form of a dot) and/or can be separated from the array 200 (eg, by way of a box) Detector 234 is shown). The sensor 234 separate from the array 200 can be an optical sensor.

In one embodiment, referring to Figure 7(G), array 200 can have one or more heat sinks 230 to increase the surface area for heat dissipation. The heat sink 230 can be, for example, on the top surface of the array 200 and/or on the side surface of the array 200. Optionally, one or more additional heat sinks 232 may be provided to cooperate with the heat sink 230 to promote heat dissipation. For example, the heat sink 232 can absorb heat from the heat sink 230 and can include a fluid (eg, liquid) conductive channel and associated heat exchange similar to that shown in FIG. 7(F) and described with respect to FIG. 7(F). / pump.

In one embodiment, referring to FIG. 7(H), the array 200 can be located at or near the fluid confinement structure 236, and the fluid confinement structure 236 is configured to maintain the fluid 238 in contact with the body of the array 200 to promote heat dissipation through the fluid. Scattered. In an embodiment, the fluid 238 can be a liquid, such as water. In an embodiment, the fluid confinement structure 236 provides a seal between it and the body of the array 200. In an embodiment, the seal may be a contactless seal provided via, for example, gas flow or capillary forces. In an embodiment, fluid 238 is circulated to promote heat dissipation similar to that discussed with respect to fluid conducting channel 222. Fluid 238 may be supplied by fluid supply element 240.

In an embodiment, referring to FIG. 7(H), the array 200 can be located at or near the fluid supply element 240, and the fluid supply element 240 is configured to project the fluid 238 toward the body of the array 200 to promote heat loss through the fluid. Scattered. In one embodiment, fluid 238 is a gas, for example, clean dry air, N _2, an inert gas, and the like. Although fluid confinement structure 236 and fluid supply element 240 are shown together in Figure 7(H), there is no need to provide fluid confinement structure 236 and fluid supply element 240 together.

In an embodiment, the array 200 body is a substantially solid structure having, for example, a cavity for the fluid conducting channel 222. In one embodiment, the array 200 body is a substantially frame-like structure that is mostly open and to which various components (eg, individual addressable devices 102, fluid conducting channels 222, etc.) are attached. This open structure promotes gas flow and/or increases surface area. In one embodiment, the array 200 body is a substantially solid structure in which a plurality of cavities enter the body or pass through the body to promote gas flow and/or increase surface area.

While embodiments have been described above to provide cooling, or alternatively, such embodiments may provide for heating.

In one embodiment, the array 200 is desirably maintained in a substantially constant steady state during exposure use. Thus, for example, all or a majority of the individual addressable devices 102 of array 200 can be energized prior to exposure to reach or approach the desired steady state temperature, and any one or more temperature control configurations can be used for cooling during exposure. / or heating array 200 to maintain a steady state temperature. In one embodiment, any one or more temperature control configurations can be used to heat array 200 prior to exposure to achieve or approximate a desired steady state temperature. Next, during exposure, any one or more temperature control configurations can be used to cool and/or heat array 200 to maintain a steady state temperature. The measurement from sensor 234 can be used in a feedforward and/or feedback manner to maintain a steady state temperature. In an embodiment, each of the plurality of arrays 200 can have the same steady state temperature, or one or more of the plurality of arrays 200 can have one or more other arrays of the plurality of arrays 200 200 steady state temperature different steady state temperature. In one embodiment, the array 200 is heated to a temperature above the desired steady state temperature and then decreased during exposure due to cooling applied by any one or more temperature control configurations, and/or because of individual addressable devices The use of 102 is not sufficient to maintain a temperature above the desired steady state temperature.

In one embodiment, to improve thermal control and total cooling, the number of array bodies 200 is increased along and/or across the exposed areas. Thus, for example, instead of the four arrays 200 shown in FIG. 5, five, six, seven, eight, nine, ten, or more than one array 200 may be provided. Fewer arrays (e.g., one array 200) may be provided, for example, a single large array covering the full width of the substrate.

In an embodiment, a lens array as described herein is associated or integrated with a movable individual addressable device. For example, a lens array panel can be attached to each of the movable arrays 200 and thus movable (eg, rotatable) with the individual addressable devices 102. As discussed above, the lens array plate can be displaceable relative to the individual addressable device 102 (eg, in the Z direction). In an embodiment, a plurality of lens array plates may be provided for array 200, each lens array plate being associated with a different subset of a plurality of individual addressable devices 102.

In one embodiment, referring to FIG. 7(I), a single split lens 242 can be attached in front of each individual addressable device 102 and movable (eg, rotatable about axis A) with the individual addressable device 102. . Additionally, lens 242 can be displaceable relative to individual addressable device 102 via use of actuator 244 (eg, in the Z direction). In one embodiment, referring to FIG. 7(J), the individual addressable device 102 and lens 242 can be displaced together with respect to the body 246 of the array 200 by the actuator 244. In an embodiment, the actuator 244 is configured to only displace the lens 242 in the Z direction (ie, relative to the individual addressable device 102 or together with the individual addressable device 102).

In an embodiment, the actuator 244 is configured to displace the lens 242 in up to 3 degrees of freedom (Z direction, rotation about the X direction, and/or rotation about the Y direction). In an embodiment, the actuator 244 is configured to displace the lens 242 in up to 6 degrees of freedom. When the lens 242 is movable relative to its individual addressable device 102, the lens 242 can be moved by the actuator 244 to change the focus position of the lens 242 relative to the substrate. As the lens 242 is movable with its individual addressable device 102, the focus position of the lens 242 is substantially constant, but displaced relative to the substrate. In an embodiment, the movement of lens 242 is individually controlled for each lens 242 associated with each individual addressable device 102 of array 200. In one embodiment, a subset of the plurality of lenses 242 are movable together with respect to or associated with a plurality of associated subsets of the plurality of individually addressable devices 102. In this latter case, the fineness of the focus control can be lost for lower data consumption and/or faster response. In one embodiment, the size of the spot of radiation provided by the individual addressable device 102 can be adjusted by defocusing, i.e., the more defocusing, the larger the spot size.

In an embodiment, referring to FIG. 7(K), the apertured structure 248 having apertures can be located below the lens 242. In an embodiment, the aperture structure 248 can be located above the lens 242 between the lens 242 and the associated individual addressable device 102. The aperture structure 248 can limit the diffraction effects of the lens 242, associated individual addressable devices 102, and/or adjacent lenses 242 / individual addressable devices 102.

In an embodiment, the individual addressable device 102 can be a radiation emitting component, such as a laser diode. This radiation emitting element can have high spatial coherence and thus can present speckle problems. In order to avoid this speckle problem, the radiation emitted by the radiation emitting element should be disturbed by shifting the phase of one beam portion relative to the other beam portion. In one embodiment, referring to FIGS. 7(L) and 7(M), the plate 250 can be located, for example, on the frame 160 with the individual addressable device 102 moving relative to the plate 250. As the individual addressable device 102 moves relative to and across the board 250, the board 250 causes the spatial coherence of the radiation directed toward the substrate to be transmitted by the individual addressable device 102. In one embodiment, as the individual addressable device 102 moves relative to and across the board 250, the board 250 is located between the lens 242 and its associated individual addressable device 102. In an embodiment, the plate 250 can be located between the lens 242 and the substrate.

In one embodiment, referring to FIG. 7(N), a spatial coherence disrupting element 252 can be located between the substrate and at least the individual addressable devices 102 that project radiation onto the exposed area. In an embodiment, spatial coherence disrupting element 252 is located between individual addressable device 102 and lens 242 and may be attached to body 246. In an embodiment, the spatial coherence disrupting element 252 is a phase modulator, a vibrating plate, or a rotating plate. As the individual addressable device 102 projects the radiation toward the substrate, the spatial coherence destroying element 252 causes the spatial coherence of the radiation emitted by the individual addressable device 102 to be destroyed.

In an embodiment, the lens array (whether together as a component or as an individual lens) is desirably attached to the array 200 via a high thermal conductivity material to facilitate conduction of heat from the lens array to the array 200, where may be more advantageous Cooling is provided.

In an embodiment, array 200 may include one or more focus or level sensors 254, such as level sensor 150. For example, sensor 254 can be configured to measure focus for each individual addressable device 102 of array 200 or for a plurality of individual addressable devices 102 for array 200. Thus, if an out-of-focus condition is detected, the focus can be corrected for each individual addressable device 102 of array 200 or for a plurality of individual addressable devices 102 for array 200. Focusing can be corrected by, for example, moving the lens 242 in the Z direction (and/or around the X axis and/or around the Y axis).

In one embodiment, the sensor 254 is integral with one of the addressable devices 102 (or may be integral with the plurality of individual addressable devices 102 of the array 200). Referring to Figure 7(O), an example sensor 254 is schematically depicted. The focus detection beam 256 is redirected (eg, reflected) away from the substrate surface, passed through the lens 242, and directed toward the detector 262 by the half-silvered mirror 258. In one embodiment, the focus detection beam 256 can be radiation for exposure that happens to be redirected from the substrate. In one embodiment, the focus detection beam 256 can be a dedicated beam that is directed at the substrate and then becomes a beam 256 after being redirected by the substrate. A knife edge 260 (which may be an aperture) is in the path of the beam 256 before the beam 256 illuminates the detector 262. In this example, detector 262 includes at least two radiation-sensitive portions (e.g., regions or detectors) shown by the splitting of detector 262 in Figure 7(O). When the substrate is in focus, a sharp image is formed at the edge 260, and thus, the radiation sensitive portion of the detector 262 receives an equal amount of radiation. When the substrate is out of focus, the beam 256 is displaced and the image will be formed in front of or behind the knife edge 260. Thus, the knife edge 260 will intercept a particular portion of the beam 256, and one of the radiation sensitive portions of the detector 262 will receive a smaller amount of radiation than the other radiation sensitive portion of the detector 262. The comparison of the output signals from the radiation sensitive portions of detector 262 achieves an amount by which the plane of the substrate redirecting beam 256 differs from the desired location, and the plane of the substrate is different from the direction in which the desired location is located. The signals can be processed electronically to give, for example, control signals for adjusting lens 242. Mirror 258, knife edge 260, and detector 262 can be mounted to array 200. In an embodiment, the detector 262 can be a quad cell.

In one embodiment, 400 individual addressable devices 102 can be provided, of which 133 work (at any time). In an embodiment, 600 to 1200 working individual addressable devices 102 may be provided with (as appropriate) additional individual addressable devices 102 as, for example, a stock and/or for correcting exposure (eg, for example) Discussed in the article). The number of individual addressable devices 102 that can be operated may depend on, for example, a resist that requires a particular radiation dose for patterning. When the individually addressable device 102 is rotatable (such as the individual addressable device 102), the individual addressable device 102 can rotate at a frequency of 6 Hz with 1200 individual addressable devices 102. If there are fewer individual addressable devices 102, the individual addressable devices 102 can be rotated at a higher frequency; if there are more individual addressable devices 102, the individual addressable devices 102 can be rotated at a lower frequency.

In one embodiment, the movable individually addressable device 102 can be used to reduce the number of individual addressable devices 102 compared to an array of other addressable devices 102. For example, an individual addressable device 102 can be provided from 600 to 1200 jobs (at any time). Moreover, the reduced number can result in substantially similar but one or more benefits to an array of other addressable devices 102. For example, for sufficient exposure capability using a violet-blue diode array, an array of 100,000 violet-blue diodes may be required, for example, with 200 diodes and 500 diodes. In the case of operation at a frequency of 10 kHz, the optical power per laser diode will be 0.33 milliwatts. The electrical power per laser diode will be 150 mW = 35 mA x 4.1 V. Therefore, for this array, the electrical power will be 15 kilowatts. In an embodiment using a movable individual addressable device, 400 purple blue diodes can be provided, of which 133 operate. With a frequency of 9 megahertz, the optical power per laser diode will be 250 milliwatts. The electrical power per laser diode will be 1000 mW = 240 mA x 4.2 V. Therefore, for this array, the electrical power will be 133 watts. Thus, the poles of the movable individually addressable device configuration can be operated in a steep portion of the optical output power as shown, for example, in Figure 7 (P) versus the forward current curve (240 milliamps versus 35 milliamps). Body, resulting in high output power per diode (250 milliwatts versus 0.33 milliwatts), but with low electrical power (133 watts versus 15 kilowatts) for a plurality of individual addressable devices. Therefore, the diode can be used more efficiently and results in less power consumption and/or heat.

Thus, in one embodiment, the diode is operated in a steep portion of the power/forward current curve. Operating in a non-steep portion of the power/forward current curve can result in incoherence of the radiation. In one embodiment, the diode is operated at an optical power greater than 5 milliwatts but less than or equal to 20 milliwatts or less than or equal to 30 milliwatts or less than or equal to 40 milliwatts. In one embodiment, the diodes are not operated with optical power greater than 300 milliwatts. In an embodiment, the diodes are operated in a single mode rather than a multi-mode.

The number of individual addressable devices 102 on array 200 can be particularly (and to some extent also as described above) depending on the length of the exposed area that array 200 is intended to cover, the rate at which the array is moved during exposure, and the spot size ( That is, the cross-sectional dimensions of the spot from the individual addressable device 102 projected onto the substrate, for example, width/diameter, and the desired strength of each of the individually addressable devices (eg, whether or not it is required to be used throughout The above-described individual addressable devices extend the intended dose of the spot on the substrate to avoid damage to the resist on the substrate or substrate), the desired scan rate of the substrate, cost considerations, the frequency with which individual addressable devices can be turned on or off. And for the need for redundant individual addressable devices 102 (as discussed earlier; for example, for the purpose of correcting exposure or as a reserve in the event of a failure of one or more individual addressable devices). In one embodiment, array 200 includes at least 100 individual addressable devices 102, for example, at least 200 individual addressable devices, at least 400 individual addressable devices, at least 600 individual addressable devices, at least 1000 individually addressable Device, at least 1500 individually addressable devices, at least 2500 individually addressable devices, or at least 5000 individually addressable devices. In one embodiment, array 200 includes 50,000 individual addressable devices 102, such as 25,000 individual addressable devices, 15,000 individual addressable devices, 10,000 individual addressable devices, and less than 7500 individually addressable Devices, 5000 or less individually addressable devices, 2,500 individual addressable devices, 1200 individual addressable devices, 600 or less individually addressable devices, or 300 or less individually addressable devices.

In one embodiment, array 200 includes at least 100 individual addressable devices for each 10 cm exposure area length (i.e., normalizing the number of individual addressable devices in an array to 10 cm exposure area length). 102, for example, at least 200 individual addressable devices, at least 400 individual addressable devices, at least 600 individual addressable devices, at least 1000 individual addressable devices, at least 1500 individual addressable devices, at least 2500 individually addressable Device, or at least 5000 individual addressable devices. In one embodiment, array 200 includes 50,000 individual addressable devices for each 10 cm exposure area length (ie, normalizing the number of individual addressable devices in an array to 10 cm exposure area length) 102, for example, 25,000 individual addressable devices, 15,000 individual addressable devices, 10,000 individual addressable devices, 7500 individual addressable devices, 5000 or less individually addressable devices, and 2500 or less individually addressable Devices, 1200 individual addressable devices, 600 individual addressable devices, or 300 or less individually addressable devices.

In one embodiment, array 200 includes less than 75% redundant individually addressable device 102, for example, 67% or less, 50% or less, about 33% or less, 25% or less. , 20% or less, 10% or less, or 5% or less. In an embodiment, array 200 includes at least 5% redundant individually addressable devices 102, for example, at least 10%, at least 25%, at least 33%, at least 50%, or at least 65%. In an embodiment, the array comprises about 67% redundant individually addressable devices.

In one embodiment, the individual addressable devices on the substrate have a spot size of 10 microns or less, 5 microns or less, for example, 3 microns or less, 2 microns or less, 1 micron. Or less than 1 micron, 0.5 micron or less, 0.3 micron or less, or about 0.1 micron. In one embodiment, the individual addressable devices on the substrate have a spot size of 0.1 micron or more, 0.2 micron or more, 0.3 micron or more, 0.5 micron or more, 0.7 micron or 0.7. Above micron, 1 micron or more, 1.5 micron or more, 2 micron or more, or 5 micron or more. In one embodiment, the spot size is about 0.1 microns. In one embodiment, the spot size is about 0.5 microns. In one embodiment, the spot size is about 1 micron.

In operation of the lithography apparatus 100, the substrate 114 is loaded onto the substrate stage 106 using, for example, a robotic handler (not shown). Substrate 114 is then displaced in the X direction below frame 160 and individual addressable device 102. Substrate 114 is measured by level sensor and/or alignment sensor 150, and then substrate 114 is exposed to a pattern using individual addressable device 102, as described above. The individual addressable device 102 can be operated, for example, to provide pixel grid imaging as discussed herein.

Figure 8 depicts a schematic side view of a lithography apparatus in accordance with an embodiment of the present invention. As shown in FIG. 8, lithography apparatus 100 includes a patterned element 104 and a projection system 108. Projection system 108 includes two lenses 176, 172. The first lens 176 is configured to receive the modulated radiation beam 110 from the patterning element 104 and focus it through the contrast apertures in the aperture stop 174. In addition, a lens (not shown) may be located in the aperture. The radiation beam 110 then diverge and is focused by a second lens 172 (eg, a field lens).

Projection system 108 further includes a lens array 170 configured to receive modulated radiation beam 110. Different portions of the modulated radiation beam 110 corresponding to one or more of the individual controllable elements in the patterned element 104 are transmitted through respective different lenses in the lens array 170. Each lens focuses a respective portion of the modulated radiation beam 110 to a point on the substrate 114. In this manner, an array of radiation spots S (see FIG. 12) is exposed onto the substrate 114. It should be understood that although only five lenses of the illustrated lens array 170 are shown, the lens array can include hundreds or thousands of lenses (as well as individual controllable devices used as the patterned elements 104).

As shown in FIG. 8, a free working distance FWD is provided between the substrate 114 and the lens array 170. This distance allows the substrate 114 and/or lens array 170 to be moved to allow, for example, focus correction. In one embodiment, the free working distance is in the range of 1 mm to 3 mm, for example, about 1.4 mm. The individual addressable devices of the patterned elements 104 are arranged at a pitch P, which results in an associated pitch P of the imaging spots at the substrate 114. In an embodiment, lens array 170 can provide an NA of 0.15 or 0.18. In one embodiment, the imaging spot size is approximately 1.6 microns.

In this embodiment, the projection system 108 can be a 1:1 projection system in that the array spacing of image spots on the substrate 114 is the same as the array spacing of the pixels of the patterning element 104. To provide improved resolution, the image spot can be significantly smaller than the pixels of patterned element 104.

Figure 9 depicts a schematic side view of a lithography apparatus in accordance with an embodiment of the present invention. In this embodiment, there is no optics between the patterned element 104 and the substrate 114 other than the lens array 170.

The lithography apparatus 100 of FIG. 9 includes a patterned element 104 and a projection system 108. In this case, projection system 108 includes only lens array 170 configured to receive modulated radiation beam 110. Different portions of the modulated radiation beam 110 corresponding to one or more of the individual controllable elements in the patterned element 104 are transmitted through respective different lenses in the lens array 170. Each lens focuses a respective portion of the modulated radiation beam 110 to a point on the substrate 114. In this manner, an array of radiation spots S (see FIG. 12) is exposed onto the substrate 114. It should be understood that although only five lenses of the illustrated lens array 170 are shown, the lens array can include hundreds or thousands of lenses (as well as individual controllable devices used as the patterned elements 104).

As in FIG. 8, the free working distance FWD is provided between the substrate 114 and the lens array 170. This distance allows the substrate 114 and/or lens array 170 to be moved to allow, for example, focus correction. The individual addressable devices of the patterned elements 104 are arranged at a pitch P, which results in an associated pitch P of the imaging spots at the substrate 114. In an embodiment, lens array 170 can provide an NA of 0.15. In one embodiment, the imaging spot size is approximately 1.6 microns.

10 depicts a schematic side view of a lithography apparatus in accordance with an embodiment of the present invention using a movable individual addressable device 102 as described above with respect to FIG. In this embodiment, there are no other optics between the patterned element 104 and the substrate 114 other than the lens array 170.

The lithography apparatus 100 of FIG. 10 includes a patterned element 104 and a projection system 108. In this case, projection system 108 includes only lens array 170 configured to receive modulated radiation beam 110. Different portions of the modulated radiation beam 110 corresponding to one or more of the individual controllable elements in the patterned element 104 are transmitted through respective different lenses in the lens array 170. Each lens focuses a respective portion of the modulated radiation beam 110 to a point on the substrate 114. In this manner, an array of radiation spots S (see FIG. 12) is exposed onto the substrate 114. It should be understood that although only five lenses of the illustrated lens array 170 are shown, the lens array can include hundreds or thousands of lenses (as well as individual controllable devices used as the patterned elements 104).

As in FIG. 8, the free working distance FWD is provided between the substrate 114 and the lens array 170. This distance allows the substrate 114 and/or lens array 170 to be moved to allow, for example, focus correction. The individual addressable devices of the patterned elements 104 are arranged at a pitch P, which results in an associated pitch P of the imaging spots at the substrate 114. In an embodiment, lens array 170 can provide an NA of 0.15. In one embodiment, the imaging spot size is approximately 1.6 microns.

FIG. 11 illustrates a plurality of individual addressable devices 102, particularly six individual addressable devices 102. In this embodiment, each of the individual addressable devices 102 is a radiation emitting diode, such as a blue-violet laser diode. Each of the radiation emitting diodes bridges two wires to supply current to the radiation emitting diode to control the diode. Therefore, the diode forms an addressable grid. The width between the two wires is about 250 microns and the radiation emitting diode has a distance of about 500 microns.

Figure 12 schematically illustrates how a pattern on substrate 114 can be created. The solid circles represent an array of spots S projected onto the substrate 114 by the lens array MLA in the projection system 108. When a series of exposures are exposed on the substrate 114, the substrate is moved relative to the projection system 108 in the X direction. The open circles indicate the spot exposure SE that has been previously exposed on the substrate. As shown, the spot exposure column R is exposed on the substrate 114 by each spot of light projected onto the substrate 114 by the lens array 170 within the projection system 108. A complete pattern for the substrate 114 is produced by exposing the sum of all columns R of SE exposed by the spot exposed by each of the spots S. This configuration is often referred to as "pixel raster imaging." It should be understood that FIG. 12 is a schematic diagram and that the spot S can be practically overlapped.

It can be seen that the array of radiation spots S is arranged at an angle a relative to the substrate 114 (the edges of the substrate 114 are parallel to the X and Y directions). This process is performed such that when the substrate 114 is moved in the scanning direction (X direction), each of the radiation spots will be transmitted throughout different regions of the substrate, thereby allowing the entire substrate to be covered by the array of radiation spots S. In an embodiment, the angle α is at most 20°, 10°, for example, at most 5°, at most 3°, at most 1°, at most 0.5°, at most 0.25°, at most 0.10°, at most 0.05°, or at most 0.01°. . In an embodiment, the angle a is at least 0.0001°, for example, at least 0.001°. The tilt angle α and the width of the array in the scanning direction are determined based on the image spot size and array spacing in the direction perpendicular to the scanning direction to ensure that the entire surface area of the substrate 114 is addressed.

Figure 13 schematically illustrates how the entire substrate 114 can be exposed in a single scan by using a plurality of optical engines, each optical engine comprising one or more individually addressable devices. Eight radiation spot S arrays SA (not shown) are generated by eight optical engines, and the optical engines are arranged in two rows R1, R2 in a "checkerboard" or staggered configuration, so that a radiation The edge of the point S array slightly overlaps the edge of the array of adjacent radiation spots S. In an embodiment, the optical engine is configured to have at least 3 columns, for example, 4 columns or 5 columns. In this manner, the radiation band extends across the width of the substrate W, allowing exposure of the entire substrate to be performed in a single scan. This "full width" single pass exposure helps to avoid possible press-fitting problems with two or more passes, and also reduces machine footprint because the substrate may not need to be oriented transverse to the direction of substrate pass. mobile. It should be appreciated that any suitable number of optical engines can be used. In an embodiment, the number of optical engines is at least 1, for example, at least 2, at least 4, at least 8, at least 10, at least 12, at least 14, or at least 17. In an embodiment, the number of optical engines is less than 40, for example, less than 30 or less than 20. Each optical engine can include a separate patterned element 104, and (as appropriate) separate projection system 108 and/or radiation system as described above. However, it should be appreciated that two or more optical engines may share at least a portion of one or more of the radiation system, the patterning element 104, and/or the projection system 108.

In the embodiments described herein, a controller is provided to control the individual addressable devices. For example, in an example where the individual addressable devices are radiating radiating elements, the controller can control when individual addressable devices are turned on or off and achieve high frequency modulation of the individual addressable devices. The controller can control the power of the radiation emitted by one or more of the individually addressable devices. The controller adjusts the intensity of the radiation emitted by one or more of the individual addressable devices. The controller can control/adjust intensity uniformity across all or a portion of the array of individually addressable devices. The controller can adjust the radiation output of the individual addressable devices to correct imaging errors, such as etendue and optical aberrations (eg, coma, astigmatism, etc.).

In lithography, the desired features can be produced on the substrate by selectively exposing the resist layer on the substrate to radiation (e.g., by exposing the resist layer to patterned radiation). The area of the resist that receives a particular minimum radiation dose ("dose threshold") undergoes a chemical reaction while the other areas remain unchanged. The resulting chemical differences in the resist layer allow for the development of the resist, i.e., selectively removing at least the region where the minimum dose has been received or removing the region where the minimum dose has not been received. As a result, portions of the substrate are still protected by the resist and exposed to areas of the substrate from which the resist is removed, thereby allowing, for example, additional processing steps such as selective etching of the substrate, selective metal deposition, and the like, Thereby producing the desired features. Patterned radiation can be achieved by setting individual controllable devices in the patterned element such that the radiation transmitted to the region of the resist layer on the substrate within the desired feature is at a sufficiently high intensity such that the region Radiation doses above the dose threshold are received during exposure, while other regions on the substrate receive radiation doses below the dose threshold by setting corresponding individual controllable devices to provide zero or significantly lower radiation intensity.

In practice, even if individual controllable devices are set to provide maximum radiant intensity on one side of the feature boundary and minimum radiant intensity on the other side, the radiation dose at the edge of the desired feature may not be self-giving at the maximum dose abruptly Change to zero dose. Instead, due to the diffraction effect, the level of the radiation dose can fall across the transition zone. The position of the boundary of the desired feature that is ultimately formed after developing the resist is then determined by the position at which the received dose falls below the radiation dose threshold. Individual controllable devices that can provide points of radiation to a point on or near a feature boundary not only reach a maximum intensity level or a minimum intensity level but also between a maximum intensity level and a minimum intensity level The intensity level is used to more precisely control the profile of the radiation dose drop across the transition zone, and thus more precisely control the precise location of the feature boundaries. This situation is often referred to as "grayscaling" or "grayleveling".

Grayscale adjustment can provide greater control over the location of feature boundaries in which control can only be provided to a substrate by a given individual controllable device, as compared to controls that may be provided in a lithography system. The radiation intensity is set to two values (ie, only the maximum and minimum values). In an embodiment, at least three different radiant intensity values can be projected onto the substrate, for example, at least 4 radiant intensity values, at least 8 radiant intensity values, at least 16 radiant intensity values, at least 32 radiant intensity values, At least 64 radiation intensity values, at least 100 radiation intensity values, at least 128 radiation intensity values, or at least 256 radiation intensity values. If the patterned element is the radiation source itself (eg, a light emitting diode or a laser diode array), gray scale adjustment can be achieved, for example, by controlling the intensity level of the transmitted radiation. If the contrast element is a micromirror element, gray scale adjustment can be achieved, for example, by controlling the tilt angle of the micromirror. Again, grayscale adjustment can be achieved by grouping a plurality of programmable devices in the component and controlling the number of devices in the group that are turned on or off at a given time.

In an example, the patterned element can have a series of states including: (a) a black state in which the provided radiation has a minimum contribution or even a zero contribution to the intensity distribution of its corresponding pixel; (b) the provided radiation The whitest state that produces the greatest contribution; and (c) the plurality of states in which the radiation provided produces an intermediate contribution. The states are divided into a normal set for normal beam patterning/printing, and a compensation set for compensating for the effects of defective devices. The normal set contains the black state, and the first group of intermediate states. This first group will be described as a gray state, and the gray states are selectable to provide a progressively increasing contribution from the minimum black value to a particular normal maximum to the corresponding pixel intensity. The compensation set contains the remaining second group of intermediate states, along with the whitest state. This second group of intermediate states will be described as a white state, and the white states are selectable to provide a contribution greater than the normal maximum, thereby gradually increasing until the true maximum corresponding to the whitest state is reached. Although the second group of intermediate states is described as a white state, it should be understood that this situation merely facilitates the distinction between the normal exposure step and the compensated exposure step. Alternatively, the entire plurality of states can be described as a sequence of gray states between black and white, which are selectable to achieve grayscale printing.

It will be appreciated that gray scale adjustment can be used for additional or alternative purposes for the purposes described above. For example, the processing of the substrate after exposure can be tuned such that there are more than two potential responses to the area of the substrate depending on the received radiation dose level. For example, a portion of a substrate that receives a radiation dose that is below a first threshold is responsive in a first manner; a portion of the substrate that receives a radiation dose that is above a first threshold but below a second threshold is The second mode responds; and the portion of the substrate that receives the radiation dose above the second threshold responds in a third manner. Thus, gray scale adjustment can be used to provide a radiation dose profile having more than two desired dose levels across the substrate. In one embodiment, the radiation dose profile has at least 2 desired dose levels, for example, at least 3 desired radiation dose levels, at least 4 desired radiation dose levels, at least 6 desired radiation dose levels, or at least 8 The dose level to be irradiated.

It will be further appreciated that the radiation dose profile can be controlled by a method other than controlling the intensity of the radiation received at each point on the substrate except as described above. For example, or alternatively, the amount of radiation received by each point on the substrate can be controlled by controlling the duration of exposure at that point. As a further example, each point on the substrate can potentially receive radiation in a plurality of sequential exposures. Thus, or alternatively, the radiation dose received by each point can be controlled by exposing the point using a selected subset of the plurality of sequential exposures.

In order to form a pattern on the substrate, it is necessary to set each of the individual controllable devices in the patterned elements to a necessary state at each stage during the exposure process. Therefore, a control signal indicating the necessary state must be transmitted to each of the individual controllable devices. Ideally, the lithography apparatus includes a controller 400 that generates control signals. The pattern to be formed on the substrate can be provided to the lithography apparatus in a vector definition format (eg, GDSII). In order to convert design information into control signals for each individual controllable device, the controller includes one or more data manipulation elements, each of which is configured to perform a stream of data representing the pattern Processing steps. Data manipulation elements can be collectively referred to as "datapaths."

The data manipulation element of the data path can be configured to perform one or more of the following functions: converting vector-based design information into bitmap image pattern data; converting the bitmap image pattern data to a desired radiation dose image (ie, the desired radiation dose profile across the substrate); converting the desired radiation dose image to the desired radiation intensity value for each individual controllable device; and converting the desired radiation intensity value for each individual controllable device Into the corresponding control signal.

In an embodiment, control signals may be supplied to individual controllable devices 102 and/or one or more other components (eg, sensors) by wired or wireless communication. Additionally, signals from individual controllable devices 102 and/or from one or more other components (eg, sensors) may be communicated to controller 400.

Referring to FIG. 14(A), in a wireless embodiment, a transceiver (or transmitter only) 406 transmits a signal embodying a control signal for reception by a transceiver (or receiver only) 402. The control signals are transmitted to the respective individually controllable devices 102 by one or more lines 404. In one embodiment, the signals from transceiver 406 may embody a plurality of control signals, and transceiver 402 may demultiplex the signals for respective individually controllable devices 102 and/or one or more other components (eg, , sensor) multiple control signals. In an embodiment, the wireless transmission may be by radio frequency (RF).

Referring to Figure 14(B), in a wired embodiment, one or more lines 404 can connect controller 400 to individual controllable devices 102 and/or one or more other components (e.g., sensors). In an embodiment, a single line 404 can be provided to carry each of the control signals to the array 200 body and/or to carry each of the control signals from the array 200 body. At the body of array 200, control signals can then be provided individually to individual controllable devices 102 and/or one or more other components (eg, sensors). For example, like a wireless instance, control signals may be multiplexed for transmission on a single line, and then demultiplexed for providing to individual controllable devices 102 and/or one or more other components (eg, Sensor). In one embodiment, a plurality of lines 404 may be provided to carry individual control signals for individual controllable devices 102 and/or one or more other components (eg, sensors). In embodiments where the array 200 is rotatable, a line 404 can be provided along the axis of rotation A. In an embodiment, signals may be provided to or from the array 200 body via a sliding contact at or around the motor 216. This situation may be advantageous for a rotatable embodiment. The sliding contact can be contacted, for example, by a brush of a plate.

In an embodiment, line 404 can be an optical line. In this case, the signal can be an optical signal in which, for example, different control signals can be carried at different wavelengths.

Power may be supplied to the individually controllable device 102 or one or more other components (e.g., sensors) by wired or wireless means in a manner similar to control signals. For example, in a wired embodiment, power may be supplied by one or more lines 404, regardless of whether line 404 is the same or different than the line carrying the signals. A sliding contact configuration can be provided to communicate power as discussed above. In a wireless embodiment, power can be transmitted by RF coupling.

While the previous discussion has focused on control signals supplied to individual controllable devices 102 and/or one or more other components (eg, sensors), or alternatively, such control signals should be understood as being via appropriate configuration. The transmission of signals from individual controllable devices 102 and/or from one or more other components (eg, sensors) to controller 400 is contemplated. Thus, the communication can be unidirectional (eg, only to or from individual controllable devices 102 and/or one or more other components (eg, sensors)) or bidirectional (ie, from and to individual controllable devices) 102 and/or one or more other components (eg, sensors)). For example, transceiver 402 can multiplex multiple signals from individual controllable devices 102 and/or from one or more other components (eg, sensors) for transmission to transceiver 406, which is transceiving The 406 can be multiplexed into individual signals.

In an embodiment, the control signals used to provide the pattern may be altered to account for factors that may affect the proper supply and/or implementation of the pattern on the substrate. For example, a correction can be applied to the control signal to account for heating of one or more of the arrays 200. This heating can result in a change in the direction of orientation of the individual controllable devices 102, a change in the uniformity of the radiation from the individual controllable devices 102, and the like. In an embodiment, the measured temperature and/or expansion associated with array 200 (eg, array 200 of one or more of individually controllable devices 102) may be used, for example, from sensor 234. Shrink to change the control signal that was originally provided to form the pattern. Thus, for example, during exposure, the temperature of the individually controllable device 102 can vary, resulting in a change in the projected pattern that will be provided at a single constant temperature. Therefore, the control signal can be changed to account for this change. Similarly, in an embodiment, the results from the alignment sensor and/or level sensor 150 can be used to modify the pattern provided by the individual controllable device 102. The pattern can be modified to correct, for example, distortion caused by, for example, optics (if present) between the individually controllable device 102 and the substrate 114, irregularities in the positioning of the substrate 114, unevenness of the substrate 114 ,and many more.

In an embodiment, the theory regarding the physical/optical results of the desired pattern may be based on the measured parameters (eg, measured temperature, measured distance by the level sensor, etc.) A change in the control signal is determined. In an embodiment, the change in control signal may be determined based on an experimental or empirical model of the physical/optical results of the desired pattern caused by the measured parameters. In an embodiment, the change of the control signal can be applied in a feedforward and/or feedback manner.

In an embodiment, the lithography apparatus can include a sensor 500 to measure characteristics of radiation that has been or is to be transmitted by the one or more individually controllable devices 102 toward the substrate. The sensor can be a spot sensor or a transmission image sensor. The sensor can be used, for example, to determine the intensity of radiation from the individual controllable devices 102, the uniformity of radiation from the individual controllable devices 102, the cross-sectional size or area of the spots of radiation from the individual controllable devices 102, And/or from the spot of the radiation of the individual controllable device 102 (in the XY plane).

15 depicts a schematic top view of a lithography apparatus in accordance with an embodiment of the present invention showing some example portions of sensor 500. In one embodiment, one or more sensors 500 are provided in or on substrate table 106 for holding substrate 114. For example, the sensor 500 can be provided at the front edge of the substrate stage 106 and/or at the rear edge of the substrate stage 106. In this example, four sensors 500 are shown, each array 200 being directed to one sensor. Ideally, the sensors are located at locations that will not be covered by the substrate 114. In an alternative or additional example, a sensor can be provided at the side edge of the substrate stage 106, desirably at a location that will not be covered by the substrate 114. The sensor 500 at the front edge of the substrate stage 106 can be used for pre-exposure detection of the individually controllable device 102. The sensor 500 at the rear edge of the substrate stage 106 can be used for post-exposure detection of the individually controllable device 102. The sensor 500 at the side edge of the substrate stage 106 can be used for detection of the individually controllable device 102 during exposure ("on-the-fly" detection).

Referring to Figure 16 (A), a schematic side view of a portion of a lithography apparatus in accordance with an embodiment of the present invention is depicted. In this example, only a single array 200 is depicted, and other portions of the lithography apparatus are omitted for clarity; the sensors described herein can be applied to each or some of the arrays 200. Some additional or alternative examples of the locations of the sensor 500 (other than the sensor 500 of the substrate stage 106) are depicted in FIG. 16(A). The first example is via a light beam The redirecting structure 502 (eg, a mirrored configuration) receives the irradiated sensor 500 on the frame 160 from the individual controllable device 102. In this first example, the individually controllable devices 102 are moved in the X-Y plane, and thus, different individual controllable devices in the individually controllable devices 102 can be positioned to provide radiation to the beam redirecting structure 502. A second additional or alternative example is a sensor on frame 160 that receives radiation from individual controllable devices 102 from the back side of individual controllable device 102 (i.e., the side opposite the side from which the exposure radiation is provided). 500. In this second example, the individually controllable devices 102 are moved in the X-Y plane, and thus, different individual controllable devices in the individually controllable devices 102 can be positioned to provide radiation to the sensor 500. Although the sensor 500 is shown in the path of the individual controllable device 102 at the exposure region 204 in the second example, the sensor 500 can be located where the sensor 510 is depicted. In an embodiment, the sensor 500 on the frame 160 is in a fixed position or otherwise movable, for example, by an associated actuator. The first and second examples above may also be used to provide "in operation" sensing, in addition to or in lieu of pre- and/or post-exposure sensing. A third example is sensor 500 on structures 504, 506. Structures 504, 506 are moveable by actuator 508. In one embodiment, structure 504 is located where the substrate table below the path will move (as shown in Figure 16 (A)) or at the side of the path. In an embodiment, the structure 504 can be moved by the actuator 508 to the position where the sensor 500 of the substrate stage 106 is shown in FIG. 16(A) (if the substrate stage 106 is not located here), the movement can be In the Z direction (as shown in Figure 16 (A)) or in the X and / or Y direction (if the structure 504 is at the side of the path). In one embodiment, structure 506 is located where the substrate table above the path will move (as shown in Figure 16 (A)) or at the side of the path. In one embodiment, structure 506 can be moved by actuator 508 to the location of sensor 500 where substrate stage 106 is shown in FIG. 16(A) (if substrate table 106 is not located). Structure 506 can be attached to frame 160 and is displaceable relative to frame 160.

In operation to measure the characteristics of radiation that has been or is to be transmitted by the one or more individually controllable devices 102 toward the substrate, by moving the sensor 500 and/or moving the radiation beam of the individually controllable device 102 The sensor 500 is placed in a path from the radiation of the individual controllable device 102. Thus, as an example, the substrate stage 106 can be moved to position the sensor 500 in a path from the radiation of the individual controllable device 102, as shown in Figure 16(A). In this case, sensor 500 is positioned into the path of individual controllable device 102 at exposure area 204. In an embodiment, the sensor 500 can be positioned to an individual controllable device 102 external to the exposed area 204 (eg, the individual controllable device 102 shown on the left side (if the beam redirecting structure 502 is not here)) In the path. Once in the path of the radiation, the sensor 500 can then detect the radiation and measure the characteristics of the radiation. To facilitate sensing, the sensor 500 can be moved relative to the individual controllable device 102, and/or the individual controllable device 102 can be moved relative to the sensor 500.

As a further example, the individual controllable devices 102 can be moved to a position such that the radiation illumination beams from the individual controllable devices 102 redirect the structure 502. The beam redirecting structure 502 directs the beam to the sensor 500 on the frame 160. To facilitate sensing, the sensor 500 can be moved relative to the individual controllable device 102, and/or the individual controllable device 102 can be moved relative to the sensor 500. In this example, individual controllable devices 102 are measured outside of exposed area 204.

In an embodiment, the sensor 500 can be fixed or mobile. If fixed, the individually controllable device 102 is desirably movable relative to the fixed sensor 500 to facilitate sensing. For example, array 200 can be moved (eg, rotated or translated) relative to sensor 500 (eg, sensor 500 on frame 160) to facilitate sensing by sensor 500. If the sensor 500 is movable (eg, the sensor 500 on the substrate table 106), the individual controllable device 102 can be held stationary for sensing, or otherwise moved to, for example, accelerate Sensing.

Sensor 500 can be used to calibrate one or more of individually controllable devices 102. For example, the location of the spot of the individual controllable device 102 can be detected by the sensor 500 prior to exposure and the system calibrated accordingly. Exposure may then be adjusted based on this desired location of the spot (eg, controlling the position of the substrate 114, controlling the position of the individual controllable device 102, controlling the closing or opening of the individual controllable device 102, etc.). In addition, calibration can be performed subsequently. For example, calibration can be performed immediately after exposure, for example, on the trailing edge of substrate stage 106 and prior to additional exposure. Calibration can be performed before each exposure, after a certain number of exposures, and the like. In addition, the sensor 500 can be used to "detect" the location of the spot of the individually controllable device 102 and to adjust the exposure accordingly. Alternatively, the individual controllable device 102 may be recalibrated based on "in operation" sensing.

In one embodiment, one or more individually controllable devices 102 can be encoded to be able to detect which of the other controllable devices 102 is in a particular location or is being used. In an embodiment, the individual controllable device 102 can have indicia, and the sensor 510 can be used to detect indicia that can be RFID, barcode, and the like. For example, each of the plurality of individually controllable devices 102 can be moved adjacent to the sensor 510 to read the indicia. In the event that it is recognized which of the other controllable devices 102 is adjacent to the sensor 510, it is possible to know which of the other controllable devices 102 is adjacent to the sensor 500, in the exposed region 204, and the like. In an embodiment, each individual controllable device 102 can be used to provide radiation having different frequencies, and the sensors 500, 510 can be used to detect which of the other controllable devices 102 are adjacent to the sensors 500, 510. For example, each of the plurality of individually controllable devices 102 can be moved adjacent to the sensors 500, 510 to receive radiation from the individually controllable device 102, and then, the sensors 500, 510 can be demultiplexed Radiation is received to determine which of the other controllable devices 102 is adjacent to the sensors 500, 510 at a particular time. In this case, it is possible to know which of the other controllable devices 102 is adjacent to the sensor 500, is in the exposed area 204, and the like.

In an embodiment, as discussed above, a position sensor can be provided to determine the position of one or more of the individually controllable devices 102 in up to 6 degrees of freedom. For example, sensor 510 can be used for position detection. In an embodiment, the sensor 510 can include an interferometer. In an embodiment, the sensor 510 can include an encoder that can be used to detect one or more single-dimensional encoder gratings and/or one or more two-dimensional encoder gratings.

In an embodiment, sensor 520 can be provided to determine the characteristics of the radiation that has been transmitted to the substrate. In this embodiment, sensor 520 captures radiation that is redirected by the substrate. In an example use, the redirected radiation captured by sensor 520 can be used to facilitate determining the location of the spot of radiation from the individual controllable device 102 (eg, the spot of radiation from the individual controllable device 102). Not aligned). In particular, sensor 520 can capture radiation (i.e., latent image) that has been redirected from the exposed portion of the substrate. The measurement of the intensity of this tailed redirected radiation can give an indication of whether the spot has been properly aligned. For example, the repeat measurement of the tail can give a repeatability signal, the deviation from the repeatability signal will indicate a misalignment of the spots (eg, the out-of-phase signal can indicate misalignment). FIG. 16(B) depicts a schematic location of the detected area of sensor 520 relative to exposed area 522 of substrate 114. In this embodiment, three detection zones are shown, the results of which can be compared and/or combined to facilitate identification misalignment. Only one detection area is needed, for example, the detection area on the left side. In an embodiment, the detector 262 of the individually controllable device 102 can be used in a similar manner to the sensor 520. For example, one or more individually controllable devices 102 external to the exposed area 204 of the array 200 on the right side can be used to detect radiation redirected from the latent image on the substrate.

Figure 17 depicts an embodiment of a lithography apparatus. In this embodiment, a plurality of individual controllable devices 102 direct radiation toward the rotatable polygon 600. The surface 604 of the polygon 600 illuminated by the radiation redirects the radiation toward the lens array 170. Lens array 170 directs radiation toward substrate 114. During exposure, the polygon 600 rotates about the axis 602, causing individual beams from each of the plurality of individually controllable devices 102 to move across the lens array 170 in the Y direction. In particular, when each new facet of the polygon 600 is illuminated with radiation, the beam will be repeatedly scanned across the lens array 170 in the positive Y direction. The individual controllable devices 102 are modulated during exposure to provide the desired pattern discussed herein. A polygon can have any number of suitable sides. Additionally, the individual controllable devices 102 are modulated in time series with a rotating polygon 600 such that the individual beams illuminate the lens of the lens array 170. In an embodiment, a plurality of additional individually controllable devices 102 may be provided on opposite sides of the polygon (i.e., on the right side) to cause radiation to illuminate surface 606 of polygon 600.

In an embodiment, vibrating optics may be used in place of polygon 600. The vibrating optics have a particular fixed angle relative to the lens array 170 and can be translated back and forth in the Y direction to cause the beam to scan back and forth across the lens array 170 in the Y direction. In an embodiment, optics that rotate back and forth about the axis 602 via the arc may be used instead of the polygon 600. Rotating the optics back and forth through the arc causes the beam to scan back and forth across the lens array 170 in the Y direction. In an embodiment, the polygon 600, the vibrating optics, and/or the rotating optics have one or more mirrored surfaces. In an embodiment, the polygon 600, the vibrating optics, and/or the rotating optics comprise a crucible. In an embodiment, an acousto-optic modulator can be used in place of the polygon 600. An acousto-optic modulator can be used to cause the beam to scan across the lens array 170. In one embodiment, lens array 170 can be placed in a radiation path between a plurality of individual controllable devices 102 and polygons 600, vibrating optics, rotating optics, and/or acousto-optic modulators.

Thus, in general, the width of the exposed area (e.g., substrate) can be covered with less radiation output than the width of the radiation output divided into the width of the exposed area. In an embodiment, this may include moving the source of the radiation beam relative to the exposure area or moving the beam of radiation relative to the exposure area.

FIG. 18 depicts a schematic cross-sectional side view of a lithography apparatus in accordance with an embodiment of the present invention having a movable individually controllable device 102. Like the lithography apparatus 100 shown in FIG. 5, the lithography apparatus 100 includes a substrate stage 106 for holding a substrate, and a positioning component 116 for moving the substrate in up to 6 degrees of freedom. Stage 106.

The lithography apparatus 100 further includes a plurality of individual controllable devices 102 disposed on the frame 160. In this embodiment, each of the individually controllable devices 102 is a radiation emitting diode, such as a laser diode (eg, a blue-violet laser diode). Individual controllable devices 102 are configured to array 200 of individually controllable devices 102 that extend in the Y direction. Although an array 200 is shown, the lithography apparatus can have a plurality of arrays 200 as shown, for example, in FIG.

In this embodiment, array 200 is a rotatable plate having a plurality of spatially separated individual controllable devices 102 disposed about the plate. In use, the plate rotates about its own axis 206, for example, in the direction indicated by the arrow in FIG. The plate of array 200 is rotated about axis 206 using motor 216. Additionally, the plates of array 200 can be moved in the Z direction by motor 216 such that individual controllable devices 102 can be displaced relative to substrate table 106.

In this embodiment, array 200 can have one or more fins 230 to increase the surface area for heat dissipation. Heat sink 230 can be, for example, on the top surface of array 200. Optionally, one or more additional heat sinks 232 may be provided to cooperate with the heat sink 230 to promote heat dissipation. For example, the heat sink 232 can absorb heat from the heat sink 230 and can include a fluid (eg, liquid) conductive channel and associated heat exchange similar to that shown in FIG. 7(F) and described with respect to FIG. 7(F). / pump.

In this embodiment, lens 242 can be located in front of each individual controllable device 102 and can be movable (eg, rotatable about axis A) with individual controllable devices 102. In FIG. 18, two lenses 242 are shown and attached to array 200. Additionally, lens 242 can be displaceable relative to individual controllable device 102 (eg, in the Z direction).

In this embodiment, the apertured structure 248 having apertures can be positioned over the lens 242 between the lens 242 and the associated individually controllable device 102. The aperture structure 248 can limit the diffraction effects of the lens 242, associated individual controllable devices 102, and/or adjacent lenses 242 / individual controllable devices 102.

In this embodiment, the sensor 254 can be provided with an individual addressable device 102 (or a plurality of individual addressable devices 102 having an array 200). In this embodiment, sensor 254 is configured to detect focus. The focus detection beam 256 is redirected (eg, reflected) away from the substrate surface, passed through the lens 242, and directed toward the detector 262 by, for example, a half-silvered mirror 258. In one embodiment, the focus detection beam 256 can be radiation for exposure that happens to be redirected from the substrate. In one embodiment, the focus detection beam 256 can be a dedicated beam that is directed at the substrate and then becomes a beam 256 after being redirected by the substrate. An example focus sensor is described above with respect to Figure 7(O). Mirror 258 and detector 262 can be mounted to array 200.

In this embodiment, control signals may be supplied to individual controllable devices 102 and/or one or more other components (eg, sensors) by wired or wireless communication. Additionally, signals from individual controllable devices 102 and/or from one or more other components (eg, sensors) can be communicated to the controller. In FIG. 18, a line 404 can be provided along the axis of rotation 206. In an embodiment, line 404 can be an optical line. In this case, the signal can be an optical signal in which, for example, different control signals can be carried at different wavelengths. Power may be supplied to the individually controllable device 102 or one or more other components (e.g., sensors) by wired or wireless means in a manner similar to control signals. For example, in a wired embodiment, power may be supplied by one or more lines 404, regardless of whether line 404 is the same or different than the line carrying the signals. In a wireless embodiment, power can be transmitted by RF coupling as shown at 700.

In this embodiment, the lithography apparatus can include a sensor 500 to measure characteristics of radiation that has been or is to be transmitted by the one or more individually controllable devices 102 toward the substrate. The sensor can be a spot sensor or a transmission image sensor. The sensor can be used, for example, to determine the intensity of radiation from the individual controllable devices 102, the uniformity of radiation from the individual controllable devices 102, the cross-sectional size or area of the spots of radiation from the individual controllable devices 102, And/or from the spot of the radiation of the individual controllable device 102 (in the XY plane). In this embodiment, the sensor 500 is on the frame 160 and may be adjacent to or adjacent to the substrate stage 106 via the substrate stage 106.

In one embodiment, during exposure of the substrate, the individually controllable device 102 is substantially stationary in the X-Y plane rather than moving the individually controllable device 102 in the X-Y plane. This situation does not mean that the controllable device 102 may not be movable in the X-Y plane. For example, the controllable devices can be moved in the X-Y plane to correct the position of the controllable devices. A possible advantage of making the controllable device 102 substantially stationary is that it is easier to transfer power and/or data to the controllable device 102. Additionally or alternatively, there may be an improved ability to locally adjust the focus to compensate for the height difference of the substrate, the height difference being greater than the depth of focus of the system and being at a higher spatial frequency than the distance between the mobile controllable devices.

In this embodiment, although the controllable device 102 is substantially stationary, there is at least one optical device that moves relative to the individual controllable device 102. Various configurations of individually controllable devices 102 that are substantially stationary in the X-Y plane and optics that are movable relative to the individual controllable devices 102 are described below.

In the following description, the term "lens" shall be generally understood to encompass any or a combination of various types of optical components, including refractive, reflective, magnetic, electromagnetic, and electrostatic optical components, such as provided, as permitted by the context of the context. Any refractive, reflective, and/or diffractive optic that functions the same as the function of the reference lens. For example, it may be in the form of a conventional refractive lens with optical power, in the form of a Schwarzschild reflection system with optical power and/or in a zone plate with optical power. The form reflects the imaging lens. Furthermore, if the resulting effect produces a convergent beam on the substrate, the imaging lens can comprise non-imaging optics.

Additionally, in the following description, reference is made to a plurality of individual controllable devices 102, such as a mirror or a plurality of radiation sources of a mirror array modulator. However, the description should be more generally understood to refer to a modulator configured to output a plurality of beams. For example, the modulator can be an acousto-optic modulator that outputs a plurality of beams from a beam provided by a source of radiation.

19 depicts a schematic top view layout of a portion of a lithography apparatus having a plurality of individually controllable devices 102 (eg, a laser diode) that are substantially stationary in an XY plane in accordance with an embodiment of the present invention. And optics 242 movable relative to the individual controllable device 102. In this embodiment, a plurality of individual controllable devices 102 are attached to the frame and are substantially stationary in the XY plane, and the plurality of imaging lenses 242 move substantially in the XY plane relative to the individually controllable devices 102 (eg, in In Fig. 19, as indicated by the indication of the rotation of the wheel 801, the substrate is moved in the direction 803. In an embodiment, imaging lens 242 is moved relative to individual controllable device 102 by rotation about an axis. In an embodiment, imaging lens 242 is mounted on a structure that is rotated about an axis (eg, in the direction shown in FIG. 19) and configured in a circular manner (eg, as shown partially in FIG. 19).

Each of the individually controllable devices 102 provides a collimated beam of light to the moving imaging lens 242. In one embodiment, the individual controllable device 102 is associated with one or more collimating lenses to provide a collimated beam of light. In an embodiment, the collimating lens is substantially stationary in the X-Y plane and attached to the frame to which the individual controllable device 102 is attached.

In this embodiment, the cross-sectional width of the collimated beam is less than the cross-sectional width of the imaging lens 242. Thus, once the collimated beam falls completely within the optically transmissive portion of imaging lens 242, individual controllable device 102 (e.g., a diode laser) can be turned on. When the beam falls outside of the optically transmissive portion of imaging lens 242, individual controllable device 102 (e.g., a diode laser) is turned off. Thus, in one embodiment, the light beams from the individual controllable devices 102 are passed through a single imaging lens 242 at any one time. The imaging lens 242 is associated with the imaged line 800 on the substrate relative to each of the individual controllable devices 102 that traverse the self-opening relative to the light beams from the individual controllable devices 102. In FIG. 19, three warp-image lines 800 are shown relative to each of the three example individually controllable devices 102 of FIG. 19, but it will be apparent that other individual controllable devices 102 of FIG. 19 may be on the substrate. An associated imaging line 800 is created thereon.

In the FIG. 19 layout, imaging lens 242 may have a pitch of 1.5 millimeters, and the beam width (eg, diameter) from each of individual controllable devices 102 is slightly less than 0.5 millimeters. In the case of this configuration, it is possible to write a line having a length of about 1 mm with each individual controllable device 102. Thus, in this configuration of a beam diameter of 0.5 mm and a diameter of the imaging lens 242 of 1.5 mm, the duty cycle can be as high as 67%. In the case of proper positioning of the individual controllable device 102 relative to the imaging lens 242, full coverage across the width of the substrate is possible. Thus, for example, if only a standard 5.6 mm diameter laser diode is used, several concentric rings of the laser diode (as shown in Figure 19) can be used to obtain full coverage across the width of the substrate. Thus, in this embodiment, it may be possible to use fewer individually controllable devices 102 than if only the array of fixed individual controllable devices 102 were used or perhaps in the case of moving individual controllable devices 102 as described herein. (for example, a laser diode).

In this embodiment, each of the imaging lenses 242 should be identical, as each individual controllable device 102 will be imaged by all of the moving imaging lenses 242. In this embodiment, all imaging lenses 242 do not require an imaging field, but require a higher NA lens, for example, greater than 0.3, greater than 0.18, or greater than 0.15. In the case of this single device optics, a diffraction limited imaging system is possible.

The focus of the beam on the substrate is fixed to the optical axis of the imaging lens 242, independent of the collimated beam entering the lens (see, for example, Figure 20, which depicts a schematic three-dimensional view of a portion of the lithography apparatus of Figure 19). formula). A disadvantage of this configuration is that the beam of light from the imaging lens 242 toward the substrate is not telecentric, and therefore, focus errors may occur, which may result in stacking errors.

In this embodiment, adjusting the focus by using a device that is not moving in the X-Y plane (e.g., at the individual controllable device 102) will likely result in vignetting. Therefore, the desired focus adjustment should occur in the moving imaging lens 242. Therefore, this situation may require an actuator of a higher frequency than moving the imaging lens 242.

21 depicts a schematic side view layout of a portion of a lithography apparatus having individual controllable devices that are substantially stationary in an XY plane and optically movable relative to individual controllable devices, in accordance with an embodiment of the present invention. The device, and showing the set of imaging lenses 242, is positioned at three different rotational positions relative to the individual controllable devices. In this embodiment, the lithography apparatus of FIGS. 19 and 20 is augmented by including imaging lens 242 with two lenses 802, 804 to receive a collimated beam from individual controllable devices 102. As in FIG. 19, imaging lens 242 is moved relative to individual controllable device 102 in the X-Y plane (eg, rotated about an axis in which imaging lens 242 is at least partially disposed in a circular manner). In this embodiment, the light beams from the individual controllable devices 102 are collimated by the lens 806 before reaching the imaging lens 242, but in one embodiment, there is no need to provide such a lens. Lens 806 is substantially stationary in the X-Y plane. The substrate moves in the X direction.

The two lenses 802, 804 are disposed in the optical path of the collimated beam from the individual controllable device 102 to the substrate such that the beam toward the substrate is telecentric. Between individual controllable device 102 and lens 804, lens 802 includes two lenses 802A, 802B having substantially equal focal lengths. The collimated beam from the individual controllable device 102 is focused between the two lenses 802A, 802B such that the lens 802B collimates the beam toward the imaging lens 804. Imaging lens 804 images the beam onto the substrate.

In this embodiment, lens 802 is moved at a particular rate (eg, a specific number of revolutions per minute (RPM)) in the X-Y plane relative to individual controllable device 102. Thus, in this embodiment, if the moving imaging lens 804 is moving at the same rate as the lens 802, the exit collimated beam from the lens 802 will have twice the rate of moving the imaging lens 804 in the XY plane. s speed. Thus, in this embodiment, imaging lens 804 moves at a rate different from that of lens 802 relative to individual controllable device 102. In particular, imaging lens 804 moves at a rate that is twice the rate of lens 802 (e.g., twice the RPM of lens 802) in the X-Y plane such that the beam will be telecentrically focused on the substrate. This alignment of the exit collimated beam from lens 802 to imaging lens 804 is schematically illustrated in the three example locations in FIG. In addition, because the actual writing on the substrate will be performed at twice the rate compared to the example of Figure 19, the power of the individually controllable device 102 should be doubled.

In this embodiment, adjusting the focus by using a device that is not moving in the X-Y plane (e.g., at the individual controllable device 102) will likely result in loss of telecentricity and result in vignetting. Therefore, the desired focus adjustment should occur in the moving imaging lens 242.

Additionally, in this embodiment, all imaging lenses 242 do not require an imaging field. In the case of this single device optics, a diffraction limited imaging system is possible. Approximately 65% of the action time cycle is possible. In one embodiment, lenses 806, 802A, 802B, and 804 can include two aspherical lenses and two spherical lenses.

In an embodiment, about 380 individual controllable devices 102 (eg, standard laser diodes) can be used. In an embodiment, a collection of approximately 1400 imaging lenses 242 can be used. In an embodiment using a standard laser diode, a collection of approximately 4,200 imaging lenses 242 can be used, which can be arranged on a single rotor with six concentric rings. In an embodiment, the rotating wheel of the imaging lens will rotate at approximately 12,000 RPM.

22 depicts a schematic side view layout of a portion of a lithography apparatus having individual controllable devices that are substantially stationary in the XY plane and optically movable relative to the individual controllable devices, in accordance with an embodiment of the present invention. The device, and showing the set of imaging lenses 242, is positioned at three different rotational positions relative to the individual controllable devices. In this embodiment, to avoid moving the lens at different rates as described with respect to Figure 21, the so-called 4f telecentric in/telecentric extension for moving the imaging lens 242 can be used as shown in FIG. (telecentric out) imaging system. The moving imaging lens 242 includes two imaging lenses 808, 810 that move in substantially the same rate in the XY plane (eg, rotate about an axis in which the imaging lens 242 is at least partially disposed in a circular manner), and A telecentric beam is received as an input and a telecentric imaging beam is output to the substrate. In this configuration with a magnification of one, the image on the substrate moves twice as fast as the moving imaging lens 242. The substrate moves in the X direction. In this configuration, the optics will most likely need to image the field with a relatively large NA, for example, greater than 0.3, greater than 0.18, or greater than 0.15. In the case of two single device optics, this configuration may not be possible. Six or more devices with extremely accurate alignment tolerances may be required to obtain a diffraction limited image. Approximately 65% of the action time cycle is possible. In this embodiment, it is also relatively easy to focus locally with a device that does not move along or in conjunction with the movable imaging lens 242.

23 depicts a schematic side view layout of a portion of a lithography apparatus having individual controllable devices that are substantially stationary in an XY plane and optically movable relative to individual controllable devices, in accordance with an embodiment of the present invention. The device, and showing the set of imaging lenses 242 at five different rotational positions relative to the individual controllable devices. In this embodiment, in order to avoid moving the lens at different rates as described with respect to Figure 21 and in order to prevent the optics from being imaged as described with respect to Figure 22, the combination of lenses that are substantially stationary in the XY plane is The moving imaging lens 242 is combined. Referring to Figure 23, an individual controllable device 102 that is substantially stationary in the X-Y plane is provided. An optional collimating lens 806 is provided that is substantially stationary in the XY plane to collimate the beam from the individual controllable device 102 and to collimate the beam (having a cross-sectional width (eg, diameter) of, for example, 0.5 mm) Provided to lens 812.

Lens 812 is also substantially stationary in the X-Y plane and focuses the collimated beam to field lens 814 of moving imaging lens 242 (having a cross-sectional width (e.g., diameter) of, for example, 1.5 millimeters). Lens 814 has a relatively large focal length (eg, f = 20 mm).

The field lens 814 of the movable imaging lens 242 is moved relative to the individual controllable device 102 (eg, rotated about an axis in which the imaging lens 242 is at least partially disposed in a circular manner). Field lens 814 directs the beam toward imaging lens 818 of movable imaging lens 242. Like field lens 814, imaging lens 818 moves relative to individual controllable device 102 (eg, about an axis in which imaging lens 242 is at least partially disposed in a circular manner). In this embodiment, field lens 814 is moved at substantially the same rate as imaging lens 818. A pair of field lenses 814 are aligned with imaging lens 818 relative to one another. The substrate moves in the X direction.

Lens 816 is between field lens 814 and imaging lens 818. Lens 816 is substantially stationary in the X-Y plane and the beam from field lens 814 is aligned to imaging lens 818. Lens 816 has a relatively large focal length (eg, f = 20 mm).

In this embodiment, the optical axis of the field lens 814 should coincide with the optical axis of the corresponding imaging lens 816. The field lens 814 is designed such that the beam is folded such that the chief ray of the beam collimated by the lens 816 coincides with the optical axis of the imaging lens 818. In this way, the beam towards the substrate is telecentric.

Lenses 812 and 816 can be simple spherical lenses due to the large f-number. Field lens 814 should not affect image quality and can also be a spherical device. In this embodiment, collimating lens 806 and imaging lens 818 are lenses that do not require an imaging field. In the case of this single device optics, a diffraction limited imaging system is possible. Approximately 65% of the action time cycle is possible.

In embodiments where the movable imaging lens 242 is rotatable, at least two concentric rings of the lens and the individually controllable device 102 are provided to achieve full coverage across the width of the substrate. In one embodiment, the individual controllable devices 102 on the rings are configured at a distance of 1.5 millimeters. If a standard laser diode with a diameter of 5.6 mm is used, at least 6 concentric rings may be required for full coverage. 24 and 25 depict the configuration of concentric rings of individually controllable devices 102 in accordance with such configurations. In an embodiment, this configuration will result in approximately 380 individually controllable devices 102 having corresponding lenses that are substantially stationary in the X-Y plane. The moving imaging lens 242 will have a collection of 700 x 6 rings = 4200 lenses 814, 818. In the case of this configuration, it is possible to write a line having a length of about 1 mm with each individual controllable device 102. In an embodiment, a collection of approximately 1400 imaging lenses 242 can be used. In an embodiment, lenses 812, 814, 816, and 818 can include four aspherical lenses.

In this embodiment, adjusting the focus by using a device that is not moving in the X-Y plane (e.g., at the individual controllable device 102) will likely result in loss of telecentricity and result in vignetting. Therefore, the desired focus adjustment should occur in the moving imaging lens 242. Therefore, this situation may require an actuator of a higher frequency than moving the imaging lens 242.

26 depicts a schematic side view layout of a portion of a lithography apparatus having individual controllable devices that are substantially stationary in an XY plane and optically movable relative to individual controllable devices, in accordance with an embodiment of the present invention. Device. In this embodiment, an optical derotator is used to couple the individually controllable device 102 that is substantially stationary in the X-Y plane to the moving imaging lens 242.

In this embodiment, the individually controllable device 102 is configured in a loop along with the use of a collimating lens. The two parabolic mirrors 820, 822 reduce the ring of collimated beams from the individual controllable devices 102 to an acceptable diameter for the inverse rotator 824. In Fig. 26, a peering prism is used as the counter rotator 824. If the counter rotator rotates at a rate that is half the rate of the imaging lens 242, each individual controllable device 102 appears to be substantially stationary relative to its respective imaging lens 242. Two additional parabolic mirrors 826, 828 extend the ring of counter-rotating beams from counter-rotator 824 to an acceptable diameter for moving imaging lens 242. The substrate moves in the X direction.

In this embodiment, each individual controllable device 102 is paired with an imaging lens 242. Thus, it may not be possible to mount the individual controllable devices 102 on concentric rings, and thus, full coverage across the width of the substrate may not be obtained. Approximately 33% of the time of action is possible. In this embodiment, imaging lens 242 is a lens that does not require an imaging field.

27 depicts a schematic side view layout of a portion of a lithography apparatus having individual controllable devices that are substantially stationary in an XY plane and optically movable relative to individual controllable devices, in accordance with an embodiment of the present invention. Device. In this configuration, imaging lens 242 is configured to rotate about a direction that extends in the X-Y plane (eg, a rotating drum, rather than, for example, a rotating wheel as described with respect to Figures 19-26). Referring to Figure 27, the movable imaging lens 242 is configured on a drum configured to rotate about, for example, the Y direction. The movable imaging lens 242 receives radiation from the individually controllable device 102 extending in a line in the Y direction between the axis of rotation of the drum and the moving imaging lens 242. In principle, the line to be written by the movable imaging lens 242 thus rotated will be parallel to the scanning direction 831 of the substrate. Thus, the counter rotator 830 mounted at 45° is configured to rotate the line produced by the movable imaging lens 242 of the drum by 90° such that the imaged line is perpendicular to the scanning direction of the substrate. The substrate moves in the X direction.

For each stripe on the substrate, a circle of movable imaging lens 242 would be required on the drum. If one such circle can write a strip of 3 mm width on the substrate and the substrate is 300 mm wide, 700 (optics on the circumference of the drum) x 100 = 70,000 optical assemblies may be required on the drum. It can be used in the case where cylindrical optics are used on the drum. Additionally, in this embodiment, the imaging optics may require imaging of a particular field, which may complicate the optics. Approximately 95% of the time of action is possible. An advantage of this embodiment is that the imaged stripes can be of substantially equal length and substantially parallel and straight. In this embodiment, it is relatively easy to focus locally with a device that does not move along or in conjunction with the movable imaging lens 242.

28 depicts a schematic side view layout of a portion of a lithography apparatus having individual controllable devices that are substantially stationary in an XY plane and optically movable relative to individual controllable devices, in accordance with an embodiment of the present invention. The device, and showing the set of imaging lenses 242 at five different rotational positions relative to the individual controllable devices.

Referring to Figure 28, an individual controllable device 102 that is substantially stationary in the X-Y plane is provided. The movable imaging lens 242 includes a plurality of lens sets, each lens set including a field lens 814 and an imaging lens 818. The substrate moves in the X direction.

Field lens 814 (eg, a spherical lens) of movable imaging lens 242 moves relative to individual controllable device 102 in direction 815 (eg, about an axis in which the imaging lens is at least partially configured in a circular manner) 242). Field lens 814 directs the beam toward imaging lens 818 (eg, an aspheric lens, such as a dual aspheric surface lens) of movable imaging lens 242. Like field lens 814, imaging lens 818 moves relative to individual controllable device 102 (eg, about an axis in which imaging lens 242 is at least partially disposed in a circular manner). In this embodiment, field lens 814 is moved at substantially the same rate as imaging lens 818.

The focal plane of field lens 814 coincides with the back focal plane of imaging lens 818 at location 815, which gives a telecentric indentation/telecentric extension system. In contrast to the configuration of Figure 23, imaging lens 818 images a particular field. The focal length of field lens 814 is such that the field size for imaging lens 818 is less than 2 to 3 degrees. In this case, it is still possible to acquire diffraction limited imaging with a single device optic (eg, a dual aspheric surface single device). Field lens 814 is configured to be mounted without gaps between individual field lenses 814. In this case, the individual controllable device 102 can have an active time cycle of about 95%.

The focal length of imaging lens 818 is such that in the case of a NA of 0.2 at the substrate, such lenses will not become larger than the diameter of field lens 814. The focal length of imaging lens 818 equal to the diameter of field lens 814 will give the diameter of imaging lens 818, which leaves enough space for mounting imaging lens 818.

Due to the field angle, a slightly larger line than the field lens 814 can be written. This situation gives an overlap between the imaged lines of adjacent individual controllable devices 102 on the substrate, which overlap also depends on the focal length of imaging lens 818. Thus, the individual controllable devices 102 can be mounted to a ring at the same spacing as the imaging lens 242.

29 depicts a schematic three-dimensional view of a portion of the lithography apparatus of FIG. In this depiction, five individual controllable devices 102 and five associated movable imaging lens sets 242 are depicted. It will be apparent that additional individually controllable devices 102 and associated movable imaging lens sets 242 may be provided. The substrate is moved in the X direction as indicated by arrow 829. In one embodiment, field lens 814 is configured without spacing between the field lenses. The pupil plane is located at 817.

In order to avoid relatively small dual aspheric imaging lenses 818, reduce the amount of optics that move imaging lens 242, and use standard laser diodes as individual controllable devices 102, there are movable imaging lenses in this embodiment. The likelihood of a single lens set of 242 imaging a plurality of individual controllable devices 102. As long as the individual controllable devices 102 are telecentrically imaged onto the field lens 814 of each movable imaging lens 242, the corresponding imaging lens 818 will telescopically re-image the light beams from the individual controllable devices 102 onto the substrate. If, for example, 8 lines are simultaneously written, the diameter of the field lens 814 and the focal length of the imaging lens 818 can be increased by a factor of eight at the same yield, and the amount of the movable imaging lens 242 can be reduced to the original 1/8. Additionally, optics that are substantially stationary in the X-Y plane can be reduced, as portions of the optics required to image the individual controllable devices 102 onto the field lens 814 can be common. This configuration of simultaneously writing 8 lines by a single movable imaging lens 242 is schematically depicted in FIG. 30 with a rotational axis 821 of the collection of imaging lenses 242 and a radius 823 of the imaging lens 242 assembled from the rotational axis 821. From 1.5 mm to 12 mm (when 8 lines are simultaneously written by a single movable imaging lens 242) leaves enough space for mounting a standard laser diode as an individual controllable device 102 . In an embodiment, 224 individually controllable devices 102 (eg, standard laser diodes) may be used. In an embodiment, a collection of 120 imaging lenses 242 can be used. In one embodiment, 28 sets of substantially stationary optics are available for 224 individually controllable devices 102.

In this embodiment, it is also relatively easy to focus locally with a device that does not move along or in conjunction with the movable imaging lens 242. As long as the telecentric image of the individual controllable device 102 on the field lens 814 is moved along the optical axis and remains telecentric, the focus of the image on the substrate will only change and the image will remain telecentric. Figure 31 depicts a schematic configuration for controlling focus in a configuration of Figures 28 and 29 with a moving ridge. Two folded mirrors 832 having a ridge top (e.g., 稜鏡 or mirror set) 834 are placed in the telecentric beam from the individual controllable device 102 prior to the field lens 814. By moving the ridge top 834 away from or toward the folded mirror 832 in direction 833, the image is displaced along the optical axis and thus also displaced relative to the substrate. Since there is a large magnification along the optical axis (this is because the axial focus change is equal to the second ratio of F/number), a 25 micron defocus at the substrate with an F/2.5 beam will give a 5.625 at the field lens 814. Focus shift of the f/37.5 beam of millimeters (37.5/2.5) ² . This situation means that the ridge top 834 must move half of the focus shift.

32 depicts a schematic cross-sectional side view of a lithography apparatus having individual controllable devices that are substantially stationary in an XY plane and relative to individual, in accordance with an embodiment of the present invention, in accordance with an embodiment of the present invention. Controls the movable optics of the device. Although FIG. 32 depicts a configuration similar to that of FIG. 23, it may be modified as appropriate to suit any of the embodiments of FIGS. 19-22 and/or 24-23.

Referring to Fig. 32, lithography apparatus 100 includes a substrate stage 106 for holding a substrate, and a positioning component 116 for moving substrate stage 106 in up to six degrees of freedom.

The lithography apparatus 100 further includes a plurality of individual controllable devices 102 disposed on the frame 160. In this embodiment, each of the individually controllable devices 102 is a radiation emitting diode, such as a laser diode (eg, a blue-violet laser diode). Individual controllable devices 102 are disposed on frame 838 and extend in the Y direction. Although a frame 838 is shown, the lithography apparatus can have a plurality of frames 838 that are similarly shown as array 200 in FIG. 5, for example. Lenses 812 and 816 are further disposed on frame 838. The frame 838 is substantially stationary in the X-Y plane, and thus, the individually controllable device 102 and the lenses 812 and 816 are substantially stationary in the X-Y plane. Frame 838, individual controllable devices 102, and lenses 812 and 816 can be moved in the Z direction by actuator 836.

In this embodiment, a rotatable frame 840 is provided. Field lens 814 and imaging lens 818 are disposed on frame 840, wherein combination of field lens 814 and imaging lens 818 forms movable imaging lens 242. In use, the plate is rotated about its own axis 206, for example, relative to the array 200 in the direction indicated by the arrows in FIG. The frame 840 is rotated about the axis 206 using the motor 216. Additionally, the frame 840 can be moved in the Z direction by the motor 216 such that the movable imaging lens 242 can be displaced relative to the substrate table 106.

In this embodiment, a voided aperture structure 248 can be positioned over lens 812 between lens 812 and associated individual controllable device 102. The aperture structure 248 can limit the diffraction effects of the lens 812, associated individual controllable devices 102, and/or adjacent lenses 812 / individual controllable devices 102.

In one embodiment, lithography apparatus 100 includes one or more movable plates 890 (eg, rotatable plates (eg, rotatable disks)) that include optics (eg, lens). In the embodiment of FIG. 32, a plate 890 having a field lens 814 and a plate 890 having an imaging lens 818 are shown. In an embodiment, the lithography apparatus does not have any reflective optics that rotate when in use. In an embodiment, the lithography apparatus does not have any reflective optics that rotate when in use, and the reflective optics receive radiation from any or all of the individual controllable devices 102. In one embodiment, one or more (eg, all) of the plates 890 are substantially planar, for example, without optics (or portions of optics) that protrude above or below one or more surfaces of the plate. This situation can be provided, for example, by ensuring that the plate 890 is sufficiently thick (i.e., at least thicker than the height of the optic and positioning the optics such that the optics do not protrude) or by providing a flat cover over the plate 890 (not shown in the figure) to achieve. Ensuring that one or more surfaces of the panel are substantially flat can assist in, for example, noise reduction when the device is in use.

Figure 33 schematically depicts a schematic cross-sectional side view of a portion of a lithography apparatus having individual controllable devices that are substantially stationary in the X-Y plane. The lithography apparatus 900 includes a substrate stage 902 for holding a substrate, and a positioning component 904 for moving the substrate stage 902 in up to 6 degrees of freedom. The substrate may be a resist coated substrate (eg, a germanium wafer or a glass plate).

The lithography apparatus 900 further includes a plurality of controllable devices, such as individually controllable radiation sources 906, the individual controllable radiation sources 906 being configured to emit a plurality of light beams. Alternatively, the controllable device can include controllable devices (such as controllable optical switches, controllable attenuators, etc.) for transmitting light beams in conjunction with a light source. As depicted in Figure 33, the radiation source 906 is a self-emissive contrast element. In an embodiment, the self-emissive contrast element 906 is a radiation emitting diode such as a light emitting diode (LED), an organic LED (OLED), a polymer LED (PLED), or a laser diode (eg, solid state lightning) Shooting diodes). In one embodiment, each of the individual controllable elements 906 is a blue-violet laser diode (eg, Sanyo model DL-3146-151). These diodes are available from companies such as Sanyo, Nichia, Osram and Nitride. In an embodiment, the diode emits radiation having a wavelength of about 365 nanometers or about 405 nanometers. In an embodiment, the diode can provide an output power selected from the range of 0.5 milliwatts to 200 milliwatts. In one embodiment, the size of the laser diode (bare die) is selected from the range of 250 microns to 600 microns. In an embodiment, the laser diode has an emission region selected from the range of 0.5 square microns to 5 square microns. In an embodiment, the laser diode has a divergence angle selected from the range of 5 degrees to 44 degrees. In an embodiment, the diode has a configuration to provide a total brightness greater than or equal to about 6.4 x 10 ⁸ W/(m ² .sr) (eg, emission area, divergence angle, output power, etc.) .

Individual controllable elements 906 are disposed on frame 908 and are extendable in the Y and/or X directions. Although a frame 908 is shown, the lithography apparatus can have a plurality of frames 908. Lens 920 is further disposed on frame 908. The frame 908 is substantially stationary in the X-Y plane, and thus, the individually controllable self-emissive contrast element 906 and lens 920 are substantially stationary in the X-Y plane. The frame 908, the individually controllable contrast element 906, and the lens 920 can be moved in the Z direction by the actuator 910.

The self-emissive contrast element 906 can be configured to emit a light beam, and the projection systems 920, 924, and 930 can be configured to project a light beam onto a target portion of the substrate. The self-emissive contrast element 906 and the projection system form an optical cylinder. The lithography apparatus 900 can include an actuator configured to move the optical cylinder or a portion thereof relative to the substrate. The frame 912 configured with the field lens 924 and the imaging lens 930 is rotatable by an actuator. The combination of field lens 924 and imaging lens 930 forms movable optics 914. In use, frame 912 is rotated about its own axis 916, for example, in the direction indicated by the arrow in FIG. The frame 912 is rotated about the axis 916 using an actuator (eg, motor 918). Additionally, the frame 912 can be moved in the Z direction by the motor 910 such that the movable optics 914 can be displaced relative to the substrate stage 902.

A voided aperture structure 922 can be positioned over lens 920 between lens 920 and self-emissive contrast element 906. The aperture structure 922 can limit the diffraction effects of the lens 920, associated individual controllable self-emissive contrast elements 906, and/or adjacent lenses 920 / individually controllable self-emissive contrast elements 906.

The depicted device can be used by rotating the frame 912 while simultaneously moving the substrate on the substrate stage 902 under the optical cylinder. When the lenses 920, 924, and 930 are substantially aligned with one another, the self-emissive contrast element 906 can emit a beam of light through the lenses. By moving the lenses 924 and 930, the image of the light beam on the substrate is scanned over a portion of the substrate. By simultaneously moving the substrate on the substrate stage 902 under the optical cylinder, portions of the substrate that are subjected to the image of the self-emissive contrast element 906 are also moving. The self-emissive contrast element 906 can be turned on and off at a high rate under control of the controller (the controller also controls the rotation of the optical cylinder or portions thereof and controls the rate of the substrate) to image the resist layer on the substrate Need a pattern.

FIG. 34 depicts a schematic top view of the lithography apparatus of FIG. 33 with self-emissive contrast element 906. Like the lithography apparatus 900 shown in FIG. 33, the lithography apparatus 900 includes a substrate stage 902 for holding the substrate 928, and a positioning component 904 for moving the substrate in up to 6 degrees of freedom. Stage 902; alignment/level sensor 932, alignment/level sensor 932 is used to determine the alignment between individual addressable device 906 and substrate 928, and to determine if substrate 928 is located relative to self-emissive contrast element The position of the projection of 906. As depicted, the substrate 928 has a circular shape, however, a rectangular shaped substrate can also be processed.

Self-emissive contrast element 906 is disposed on frame 926. The self-emissive contrast element 906 can be a radiation emitting diode, such as a laser diode (eg, a blue-violet laser diode). As shown in FIG. 34, contrast element 906 can be configured as an array 934 that extends in the X-Y plane.

Array 934 can be a narrow line. In an embodiment, array 934 can be a one-dimensional array of one or more individually addressable contrast elements 906. In an embodiment, array 934 can be a two-dimensional array of one or more individually addressable contrast elements 906.

A rotating frame 912 can be provided that can be rotated in the direction depicted by the arrows. The rotating frame can be provided with lenses 924, 930 (shown in Figure 33) to provide an image of each of the movable individual contrast elements 906.

The device can be provided with an actuator configured to rotate the optical cylinder comprising the frame 912 and the lenses 924, 930 relative to the substrate.

As the rotatable frame rotates, the beam of light is incident on the sequential lens, and whenever the lens is irradiated by the beam, the beam is incident on the surface of the lens where it is located. Since the beam is projected onto the substrate differently (for example, differently deflected) depending on where the beam is incident on the lens, the beam (when it reaches the substrate) will be scanned for movement with each pass of the subsequent lens.

Rotating the wheel simultaneously with the patterning of the self-emissive contrast element (or in a more general term: movement of at least a portion of the optical cylinder formed by the self-emissive contrast element 906 and the projection system) may require high timing accuracy, In order to accurately project the desired pattern onto the substrate. Thereby, it is necessary to accurately match the time at which the beam is emitted by the self-emissive contrast element to the position of the lens through which the beam is projected, since the position of the lens has an effect on the possible deflection of the beam and thus the arrival of the beam on the substrate Location has an effect.

FIG. 35 depicts a schematic diagram of a rotatable frame 912 configured to hold lenses 924, 930. The rotatable frame is driven by an actuator (motor 936 in this example) to rotate the rotatable frame. The sensor 938 is configured to sense the (rotational) position of the rotatable frame 912, which in this example includes an encoder 938, such as an incremental optical encoder. Any other suitable type of sensor can be applied here. The position signal from the encoder is provided to a position signal processing unit (widely referred to as a "signal processor") 940, which can perform tasks such as filtering, amplifying, and the like. Encoder 938 and processing unit 940 together form a metrology system. The output signal of the metrology system is provided to a control system or controller 942 that is configured to drive the self-emissive contrast element 906. The self-emissive contrast element 906 is turned on and off (and/or modulated) by the control system 942 in preparation for projecting the pattern onto the substrate. The correlation between the movement of the rotatable frame 912 and the lenses 924, 930 and the operation of the self-emissive contrast element 906 can be related to the correct projection of the pattern onto the substrate, as provided by the self-emissive contrast element 906. The deflection of the beam depends on the position of the lenses 924, 930 and the rotatable frame 912. To achieve this correlation, the output signal of the metrology system, which provides information about the position of the rotatable frame 912 and the lenses 924, 930, is provided to the controller 942. An embodiment of the concept described with reference to FIG. 35 is depicted in FIG. 36 and described with reference to FIG.

Before returning to Figure 36, some sources of inaccuracy will be described. The signals provided by encoder 938 can be directed to various sources of error. For example, noise can be found to be a source of error, and noise, for example, has an effect on the zero crossing of the sinusoidal encoder output signal. In addition, the position of the encoder's indicia (raster, grid, stripes, etc.) can exhibit some tolerance. Moreover, the circular pattern of the indicia of encoder 938 can be slightly off-axis (eccentric) relative to the axis of rotation 916 (shown in Figure 33) of rotatable frame 912.

Similar to FIG. 35, FIG. 36 depicts actuator 936, rotatable frame 912 configured to hold lenses 924, 930, encoder 938, processing unit or processor 940, control system or controller 942, and self-emission contrast Element 906 has been described above with reference to FIG. In this embodiment, processor 940 includes a phase locked loop structure including a phase comparator 944 configured to compare the phase of the signal from encoder 938 with the signal from reference material table 950. The phase. The output signal of phase comparator 944 is provided to filter 946 (such as a low pass filter, accumulator, etc.), and the output of filter 946 is provided to a control oscillator 948 having a controllable oscillation frequency (such as voltage controlled oscillation) Device). The output signal of control oscillator 948 is output to controller 942 as a timing signal and is provided to reference material table 950 (or more precisely to its controller) to allow for output signals in accordance with control oscillator 948. The reference data table 950 is read at the frequency of the frequency. The phase locked loop structure can now be formed by phase comparator 944, filter 946, oscillator 948, and reference table 950. Analog to digital converters and digital to analog converters (not shown) may also be included in the measurement system, for example, analog to digital converters between encoder 938 and phase comparator 944, analog to digital The converter is configured to convert the sensor waveform signal into a digital signal; and a digital to analog converter between phase comparator 944 and filter 946, the digital to analog converter is configured to phase comparator 944 The output signal is converted to an analog signal to low pass filter 946. Alternatively, low pass filtering can be performed in the digital domain. In one embodiment, a frequency divider is provided between the oscillator 948 and the data table 950 to allow a higher frequency than the frequency of the signal from the sensor 938 to be provided to the controller 942. This situation allows for a reduction in sampling error.

Returning to the above error sources, the effect of the noise on the output signal of the encoder 938 can be reduced by the filtering effect of the phase locked loop structure shown in FIG. The incorporation of reference table 950 may allow for the reduction of the effects of the two other encoder errors described above (i.e., positional accuracy and eccentricity of the encoder markers). Also, the effect of regenerative disturbance on the rotational movement of the rotatable frame caused by the actuator, such as the so-called actuator cogging, can be reduced. The reference table 950 can be loaded with a reference pattern that repeats errors with respect to the encoder 938, such as eccentricity errors and positional errors of the markers. Thereby, such errors can be at least partially compensated by this by providing the same or similar error to the two inputs of the phase comparator, ie the signal from the encoder and the signal from the reference data table. Therefore, high repeatability can be obtained. With the motor control (not shown) of the actuator 936 and the inertia of the rotatable frame 912, a sufficiently constant rotation of the rotatable frame 912 can be obtained.

In order to synchronize the data sequence in the phase-locked loop structure to the reference data sequence (by at least reducing the re-sampling error), the oscillator output signal of the voltage controlled oscillator is provided as a clock signal to the reference data sheet and/or sense A sampling circuit of the detector (eg, sampling the encoder signal and converting the encoder signal into a digital signal analog to the sampling circuit of the digital converter). In order to obtain accurate sampling of the encoder signal and accurate follow-up of the phase-locked loop structure, the clock frequency of the oscillator output signal is at least 10 times the periodicity of a sensor signal, ideally at least 50 times a sense. The signal is periodic.

The calibration for loading the data into the reference table can be performed as follows: The actuator 936 is operated to rotate the rotatable frame 912. During rotation, the sensor signal is recorded (stored) throughout a plurality of revolutions of the rotatable frame 912; in the case of detecting the obtained signal, the periodicity is determined from the obtained signal; the resampling rate is now determined to be determined The periodic scores cause an integer number of sample rate time periods to conform to the determined periodic time period. The recorded sensor signal is then resampled to this resampling rate that is consistent with the periodicity; and the resampled sensor signal is stored in reference material table 950. Thereby, the reference material table 950 can be filled with repeatable errors (such as encoder flag eccentricity and positioning error) that match the output of the encoder as much as possible (ie, "emulate" the encoder signal) and the above actuation. A sequence of data for device induced errors, such as actuator cogging. Resampling may be performed from the recorded sensor signals over a plurality of periodic times to average any noise effects, and the like.

It should be understood that the controller 942 and portions of the measurement system can be implemented in the form of programming instructions on programmable elements (such as microcontrollers, field programmable gate arrays, microprocessors, etc.).

The examples are also provided below in the numbered clauses:

A lithography apparatus comprising: a substrate holder configured to hold a substrate; a modulator configured to expose an exposed area of the substrate to a a plurality of beams modulated by the pattern; and a projection system configured to project the modulated beam onto the substrate and including a lens array for receiving the plurality of beams, The projection system is configured to move the lens array relative to the modulator during exposure of the exposure region.

2. The lithography apparatus of embodiment 1, wherein each lens comprises at least two lenses, the at least two lenses being along a beam of at least one of the plurality of beams from the modulator to the substrate Configured by path.

3. The lithography apparatus of embodiment 2, wherein one of the at least two lenses comprises a field lens, and one of the at least two lenses comprises an imaging lens.

4. The lithography apparatus of embodiment 3, wherein a focal plane of the field lens coincides with a back focal plane of the imaging lens.

5. The lithography apparatus of embodiment 3 or embodiment 4, wherein the imaging lens comprises a dual aspherical surface lens.

6. The lithography apparatus of any of embodiments 3 to 5, wherein the focal length of the field lens is such that the field size for the imaging lens is less than 2 to 3 degrees.

7. The lithography apparatus according to any one of embodiments 3 to 6, wherein the focal length of the imaging lens is such that the imaging lens does not become larger than a numerical aperture (NA) of 0.2 at the substrate. The diameter of the field lens.

8. The lithography apparatus of embodiment 7, wherein the focal length of the imaging lens is equal to the diameter of the field lens.

9. The lithography apparatus of any of embodiments 3 to 8, wherein the plurality of beams are imaged by a single combination of the field lens and one of the imaging lenses.

10. The lithography apparatus of any of embodiments 3 to 9, further comprising a focus control element that is along at least one of the plurality of light beams from the modulator to the field lens One of the beam paths is configured.

11. The lithography apparatus of embodiment 10, wherein the focus control element comprises a folded mirror surface and a movable ridge top.

12. The lithography apparatus of embodiment 3, further comprising a lens in the path for collimating the light beam from the first lens to the second lens.

13. The lithography apparatus of embodiment 12, wherein the lens in the path for collimating the beam is substantially stationary relative to the modulator.

14. The lithography apparatus of any of embodiments 3, 12 or 13, further comprising between the modulator and the first lens to focus at least one of the plurality of beams One of the lenses of the first lens in the path.

15. The lithography apparatus of embodiment 14 wherein the lens in the path to focus the beam is substantially stationary relative to the modulator.

16. The lithography apparatus of any of embodiments 3 or 12 to 15, wherein the optical axis of the field lens coincides with the optical axis of the imaging lens.

17. The lithography apparatus of embodiment 2, wherein one of the at least two lenses comprises at least two sub-lenses, wherein at least one of the plurality of beams is centered between the two sub-lenses.

18. The lithography apparatus of embodiment 17, wherein each of the at least two sub-lenses has a substantially equal focal length.

19. The lithography apparatus of any of embodiments 2, 17 or 18, wherein the first lens is configured to output a collimated beam of light toward one of the at least two lenses.

20. The lithography apparatus of any one of embodiments 2 or 17 to 19, configured to cause one of the at least two lenses to be different from the second lens of the at least two lenses One rate of movement.

21. The lithography apparatus of embodiment 20, wherein the rate of the second lens is twice the rate of the first lens.

22. The lithography apparatus of embodiment 1, wherein each lens comprises a 4f telecentric indentation/telecentric extension imaging system.

23. The lithography apparatus of embodiment 22, wherein the 4f telecentric indentation/telecentric extension imaging system comprises at least 6 lenses.

24. The lithography apparatus of embodiment 1, further comprising an inverse rotator interposed between the modulator and the lens array.

25. The lithography apparatus of embodiment 24, wherein the counter rotator comprises a singularity.

26. The lithography apparatus of embodiment 24 or embodiment 25, wherein the counter rotator is configured to move at a rate that is half the rate of the lens array.

27. The lithography apparatus of any of embodiments 24 to 26, further comprising a parabolic mirror for reducing the magnitude of the beams between the modulator and the counter rotator.

28. The lithography apparatus of any of embodiments 24 to 27, further comprising a parabolic mirror for increasing the magnitude of the beams between the counter rotator and the array of lenses.

29. The lithography apparatus of any of embodiments 1 to 28, wherein the lens array is rotated relative to the modulator.

30. The lithography apparatus of any of embodiments 1 to 29, wherein the modulator comprises a plurality of individually controllable radiation sources for emitting electromagnetic radiation.

The lithography apparatus of any of embodiments 1 to 29, wherein the modulator comprises a micro-mirror array.

32. The lithography apparatus of any of embodiments 1 to 29, wherein the modulator comprises a radiation source and an acousto-optic modulator.

33. A method of fabricating a component, comprising: providing a plurality of beams modulated according to a desired pattern; and projecting the plurality of beams onto a substrate using a lens array that receives the plurality of beams; and during the projection The lens array is moved relative to the beams.

34. The method of embodiment 33, wherein each lens comprises at least two lenses, the at least two lens lines being sourced along one of the at least one light beam from the at least one of the plurality of light beams to the substrate Configured by the beam path.

35. The method of embodiment 34, wherein one of the at least two lenses comprises a field lens and one of the at least two lenses comprises an imaging lens.

36. The method of embodiment 35, wherein a focal plane of the field lens coincides with a back focal plane of the imaging lens.

37. The method of embodiment 35 or embodiment 36, wherein the imaging lens comprises a dual aspherical surface lens.

The method of any one of embodiments 35 to 37, wherein the focal length of the field lens is such that the field size for the imaging lens is less than 2 to 3 degrees.

The method of any one of embodiments 35 to 38, wherein the focal length of the imaging lens is such that, in the case of having a numerical aperture (NA) of 0.2 at the substrate, the imaging lens does not become larger than the field The diameter of the lens.

40. The method of embodiment 39, wherein the focal length of the imaging lens is equal to the diameter of the field lens.

The method of any one of embodiments 35 to 40, wherein the plurality of beams are imaged by a single combination of the field lens and one of the imaging lenses.

The method of any one of embodiments 35 to 41, further comprising using a focus control element between the source of at least one of the plurality of beams and the field lens.

43. The method of embodiment 42, wherein the focus control element comprises a folded mirror surface and a movable ridge top.

44. The method of embodiment 35, further comprising using a lens to collimate the at least one light beam between the first lens and the second lens.

45. The method of embodiment 44, wherein the lens for collimating the at least one beam is substantially stationary relative to the at least one beam.

The method of any one of embodiments 35, 44 or 45, further comprising using a lens in the path between the source of at least one of the plurality of beams and the first lens A beam of light is directed toward the first lens.

47. The method of embodiment 46 wherein the lens to focus the at least one beam is substantially stationary relative to the at least one beam.

The method of any one of embodiments 35 or 44 to 47, wherein the optical axis of the field lens coincides with the optical axis of the corresponding imaging lens.

49. The method of embodiment 34, wherein one of the at least two lenses comprises at least two sub-lenses, wherein at least one of the plurality of beams is centered between the two sub-lenses.

50. The method of embodiment 49, wherein each of the at least two sub-lenses has a substantially equal focal length.

The method of any one of embodiments 34, 49 or 50, wherein the first lens is configured to output a collimated beam toward one of the at least two lenses.

The method of any one of embodiments 34 or 49 to 51, comprising moving one of the at least two lenses at a rate different from the second lens of the at least two lenses.

53. The method of embodiment 52, wherein the rate of the second lens is twice the rate of the first lens.

54. The method of embodiment 33, wherein each lens comprises a 4f telecentric indentation/telecentric extension imaging system.

55. The method of embodiment 54, wherein the 4f telecentric indentation/telecentric extension imaging system comprises at least 6 lenses.

56. The method of embodiment 33, further comprising using an inverse rotator between the one source of the beams and the lens array to counter-rotate the beams.

57. The method of embodiment 56 wherein the counter rotator comprises a different sputum.

58. The method of embodiment 56 or embodiment 57, comprising moving the counter rotator at a rate that is half the rate of the lens array.

The method of any one of embodiments 56 to 58, further comprising using a parabolic mirror to reduce the magnitude of the beams between the source of the beam and the counter rotator.

The method of any one of embodiments 56 to 59, further comprising using a parabolic mirror to increase the magnitude of the beams between the counter rotator and the lens array.

The method of any one of embodiments 33 to 60, comprising rotating the lens array relative to the beams.

The method of any one of embodiments 33 to 61, wherein each of the plurality of individually controllable radiation sources emits each of the plurality of beams.

The method of any one of embodiments 33 to 61 wherein a micromirror array emits the plurality of beams.

The method of any one of embodiments 33 to 61, wherein a source of radiation and an acousto-optic modulator produce the plurality of beams.

65. A lithography apparatus comprising: a substrate holder configured to hold a substrate; a modulator comprising a plurality of individually controllable radiation sources for emitting electromagnetic radiation, The modulator is configured to expose an exposed area of the substrate to a plurality of beams modulated according to a desired pattern; and a projection system configured to project the modulated beam to And a lens array for receiving the plurality of beams, the projection system configured to move the lens array relative to the individually controllable radiation sources during exposure of the exposure region.

66. A method of fabricating a component, comprising: using a plurality of individually controllable radiation sources to provide a plurality of beams modulated according to a desired pattern; and projecting the plurality of beams to a lens array that receives the plurality of beams to On a substrate; and moving the lens array relative to the individually controllable radiation sources during the projection.

67. A lithography apparatus comprising: a substrate holder configured to hold a substrate; a modulator configured to expose an exposed area of the substrate to a a plurality of beams modulated by the pattern; and a projection system configured to project the modulated beam onto the substrate and including a plurality of lens arrays for receiving the plurality of beams, Each of the arrays is separately disposed along a beam path of the plurality of beams.

68. The lithography apparatus of embodiment 67, wherein the projection system is configured to move the array of lenses relative to the modulator during exposure of the exposure region.

69. The lithography apparatus of embodiment 67 or embodiment 68, wherein the lenses of each array are configured in a single body.

70. A lithography apparatus comprising: a substrate holder configured to hold a substrate; a modulator comprising a plurality of individually controllable radiation sources for emitting electromagnetic radiation, The modulator is configured to expose an exposed area of the substrate to a plurality of beams modulated according to a desired pattern and configured to move the plurality of radiation relative to the exposed area during exposure of the exposed area The source is such that only less than all of the plurality of sources of radiation can expose the exposed area at any one time; and a projection system configured to project the modulated beam onto the substrate.

71. A lithography apparatus comprising: a plurality of individually controllable radiation sources configured to provide a plurality of light beams modulated according to a desired pattern, among the plurality of radiation sources The at least one radiation source is movable between a portion of the emitted radiation and a portion of the non-emitting radiation; a substrate holder configured to hold a substrate; and a projection system, the projection system being grouped The states are projected onto the substrate by the modulated beams.

72. A lithography apparatus comprising: a substrate holder configured to hold a substrate; a modulator comprising a plurality of individually controllable radiation sources for emitting electromagnetic radiation, The modulator is configured to expose an exposed area of the substrate to a plurality of beams modulated according to a desired pattern and configured to move the plurality of radiation relative to the exposed area during exposure of the exposed area At least one source of radiation, such that radiation from the at least one source simultaneously abuts or overlaps radiation from at least one other source of the plurality of sources; and a projection system The states are projected onto the substrate by the modulated beams.

73. A lithography apparatus comprising: a substrate holder configured to hold a substrate; a plurality of individually controllable radiation sources configured to be configured according to a desired A plurality of beams modulated by the pattern are provided to an exposed area of the substrate, and at least one of the plurality of radiation sources is movable to transmit radiation to a portion of the exposed area and to emit radiation to Between one portion of the exposure region; and a projection system configured to project the modulated beam onto the substrate.

74. A lithography apparatus comprising: a substrate holder configured to hold a substrate; a modulator comprising a plurality of individually controllable radiation sources, the modulator being grouped And providing a plurality of light beams modulated according to a desired pattern to an exposed area of the substrate, and configured to move the plurality of radiation sources relative to the exposed area during exposure of the exposed area, the modulator Having the plurality of beams to an output of the exposure region, the output having an area that is less than an area of the output of the plurality of radiation sources; and a projection system configured to modulate the modulated beams Projected onto the substrate.

75. A lithography apparatus comprising: a substrate holder configured to hold a substrate; a modulator comprising a plurality of individually controllable radiation source arrays, the modulator Configuring to provide a plurality of beams modulated according to a desired pattern to respective exposure areas of the substrate, and configured to move each array relative to its respective exposure area, or relative to its respective exposure The region moves the plurality of beams from each array or moves the array and the plurality of beams relative to the respective exposure regions, wherein in use, a respective exposure region of one of the plurality of arrays And a projection system that is configured to project the modulated beam onto the substrate.

76. A lithography apparatus comprising: a substrate holder configured to hold a substrate; a modulator comprising a plurality of individually controllable radiation sources, the modulator being grouped And providing a plurality of light beams modulated according to a desired pattern to an exposed area of the substrate, and configured to move each of the plurality of radiation sources relative to the exposure area, or relative to the exposure Moving the plurality of beams or moving each of the plurality of sources and the plurality of beams relative to the exposure region, wherein each of the sources is in use during use Operating in a steep portion of the power/forward current curve; and a projection system configured to project the modulated beam onto the substrate.

77. A lithography apparatus comprising: a substrate holder configured to hold a substrate; a modulator comprising a plurality of individually controllable radiation sources, the modulator being grouped And providing a plurality of light beams modulated according to a desired pattern to an exposed area of the substrate, and configured to move each of the plurality of radiation sources relative to the exposure area, or relative to the exposure The region moves the plurality of beams or moves each of the plurality of radiation sources and the plurality of beams relative to the exposure region, wherein each of the individually controllable radiation sources comprises a blue-violet thunder a diode; and a projection system configured to project the modulated beam onto the substrate.

78. A lithography apparatus comprising: a substrate holder configured to hold a substrate; a modulator comprising a plurality of individually controllable radiation sources, the modulator being grouped And providing a plurality of light beams modulated according to a desired pattern to an exposed area of the substrate, and configured to move each of the plurality of radiation sources relative to the exposed area, the plurality of radiation sources Arranged in at least two concentric circular arrays; and a projection system configured to project the modulated beams onto the substrate.

79. The lithography apparatus of embodiment 78, wherein the at least one circular array of the circular arrays is configured in a manner of interleaving with at least one other circular array of the circular arrays.

80. A lithography apparatus comprising: a substrate holder configured to hold a substrate; a modulator comprising a plurality of individually controllable radiation sources, the modulator being grouped And providing a plurality of light beams modulated according to a desired pattern to an exposed area of the substrate, and configured to move each of the plurality of radiation sources relative to the exposed area, the plurality of radiation sources Arranging around a center of a structure having an opening extending through the structure within the plurality of radiation sources; and a projection system configured to project the modulated beam to On the substrate.

81. The lithography apparatus of embodiment 80, further comprising a support for holding the support structure at or external to the source of radiation.

82. The lithography apparatus of embodiment 81, wherein the support comprises a bearing for permitting movement of the structure.

83. The lithography apparatus of embodiment 81 or embodiment 82, wherein the support comprises a motor for moving the structure.

84. A lithography apparatus comprising: a substrate holder configured to hold a substrate; a modulator comprising a plurality of individually controllable radiation sources, the modulator being grouped And providing a plurality of light beams modulated according to a desired pattern to an exposed area of the substrate, and configured to move each of the plurality of radiation sources relative to the exposed area, the plurality of radiation sources Arranging around a center of a structure; a support member for supporting the structure at or outside the radiation source, the support member configured to rotate or allow rotation of the structure; and a projection The system is configured to project the modulated beam onto the substrate.

85. The lithography apparatus of embodiment 84, wherein the support member comprises a bearing for permitting rotation of the structure.

86. The lithography apparatus of embodiment 84 or embodiment 85, wherein the support comprises a motor for rotating the structure.

87. A lithography apparatus comprising: a substrate holder configured to hold a substrate; a modulator comprising a plurality of individually controllable radiation sources, the modulator being grouped And providing a plurality of light beams modulated according to a desired pattern to an exposed area of the substrate, and configured to move each of the plurality of radiation sources relative to the exposed area, the plurality of radiation sources Disposed on a movable structure, the movable structure is further disposed on a movable board; and a projection system configured to project the modulated beam onto the substrate.

88. The lithography apparatus of embodiment 87, wherein the movable structure is rotatable.

89. The lithography apparatus of embodiment 87 or embodiment 88, wherein the movable plate is rotatable.

90. The lithography apparatus of embodiment 89, wherein the center of rotation of the movable plate does not coincide with a center of rotation of the movable structure.

91. A lithography apparatus comprising: a substrate holder configured to hold a substrate; a modulator comprising a plurality of individually controllable radiation sources, the modulator being grouped And providing a plurality of light beams modulated according to a desired pattern to an exposed area of the substrate, and configured to move each of the plurality of radiation sources relative to the exposed area, the plurality of radiation sources Arranging in or on a movable structure; a fluid channel disposed in the movable structure to provide a temperature control fluid to be adjacent to at least the plurality of radiation sources; and a projection system, the projection system being grouped The states are projected onto the substrate by the modulated beams.

92. The lithography apparatus of embodiment 91, further comprising a sensor located in or on the movable structure.

93. The lithography apparatus of embodiment 91 or embodiment 92, further comprising a sensor located at a location adjacent to at least one of the plurality of radiation sources rather than at the location Moveable in or on the structure.

94. The lithography apparatus of embodiment 92 or embodiment 93, wherein the sensor comprises a temperature sensor.

The lithography apparatus of any one of embodiments 92 to 94, wherein the sensor comprises a sensor configured to measure expansion and/or contraction of one of the structures.

96. A lithography apparatus comprising: a substrate holder configured to hold a substrate; a modulator comprising a plurality of individually controllable radiation sources, the modulator being grouped And providing a plurality of light beams modulated according to a desired pattern to an exposed area of the substrate, and configured to move each of the plurality of radiation sources relative to the exposed area, the plurality of radiation sources Arranging in or on a movable structure; a heat sink disposed in or on the movable structure to provide temperature control of the structure; and a projection system configured to: The modulated beam is projected onto the substrate.

97. The lithography apparatus of embodiment 96, further comprising a stationary heat sink for cooperating with the heat sink in or on the movable structure.

98. The lithography apparatus of embodiment 97, comprising at least two heat sinks in or on the movable structure, and wherein the stationary heat sink is located in at least one of the heat sinks in or on the movable structure A heat sink is interposed between at least one of the heat sinks in or on the movable structure.

99. A lithography apparatus comprising: a substrate holder configured to hold a substrate; a modulator comprising a plurality of individually controllable radiation sources, the modulator being grouped And providing a plurality of light beams modulated according to a desired pattern to an exposed area of the substrate, and configured to move each of the plurality of radiation sources relative to the exposed area, the plurality of radiation sources Arranging in or on a movable structure; a fluid supply element configured to supply a fluid to an exterior surface of the structure to control a temperature of the structure; and a projection system, the projection system The modulated beam is configured to be projected onto the substrate.

100. The lithography apparatus of embodiment 99, wherein the fluid supply element is configured to supply a gas.

101. The lithography apparatus of embodiment 99, wherein the fluid supply element is configured to supply a liquid.

102. The lithography apparatus of embodiment 101, further comprising a fluid confinement structure configured to maintain the liquid in contact with the structure.

103. The lithography apparatus of embodiment 102, wherein the fluid confinement structure is configured to maintain a seal between the structure and the fluid confinement structure.

104. A lithography apparatus comprising: a substrate holder configured to hold a substrate; a modulator comprising a plurality of individually controllable radiation sources, the modulator being grouped And providing a plurality of light beams modulated according to a desired pattern to an exposed area of the substrate, and configured to move each of the plurality of radiation sources relative to the exposed area; a structural separation lens, The structural separation lens is attached proximate or attached to each of the plurality of radiation sources and is movable with the respective radiation source. 105. The lithography apparatus of embodiment 104, further comprising an actuator configured to displace a lens relative to its respective radiation source. 106. The lithography apparatus of embodiment 104 or embodiment 105, further comprising an actuator configured to direct a lens and its respective radiation source relative to the lens and its respective radiation source One of the structural displacements. 107. The lithography apparatus of embodiment 105 or embodiment 106, wherein the actuator is configured to move the lens in up to 3 degrees of freedom. 108. The lithography apparatus of any one of embodiments 104 to 107, further comprising a pore structure located downstream of at least one of the plurality of radiation sources. The lithography apparatus of any one of embodiments 104 to 107, wherein the lens is attached to a structure supporting the lens and its respective radiation source with a high thermal conductivity material.

110. A lithography apparatus comprising: a substrate holder configured to hold a substrate; a modulator comprising a plurality of individually controllable radiation sources, the modulator being grouped And providing a plurality of light beams modulated according to a desired pattern to an exposed area of the substrate, and configured to move each of the plurality of radiation sources relative to the exposed area; a spatial coherence destruction An element that is configured to disturb radiation from at least one of the plurality of radiation sources; and a projection system configured to project the modulated beam to the On the substrate.

111. The lithography apparatus of embodiment 110, wherein the spatial coherence disrupting element comprises a stationary plate and the at least one radiation source is movable relative to the plate. 112. The lithography apparatus of embodiment 110, wherein the spatial coherence disrupting element comprises at least one selected from the group consisting of: a phase modulator, a rotating plate, or a vibrating plate.

113. A lithography apparatus comprising: a substrate holder configured to hold a substrate; a modulator comprising a plurality of individually controllable radiation sources, the modulator being grouped And providing a plurality of light beams modulated according to a desired pattern to an exposed area of the substrate, and configured to move each of the plurality of radiation sources relative to the exposed area; a sensor, The sensor is configured to measure a focus associated with at least one of the plurality of radiation sources, at least a portion of the sensor being in or on the at least one radiation source; and a projection system, the The projection system is configured to project the modulated beam onto the substrate.

114. The lithography apparatus of embodiment 113, wherein the sensor is configured to individually measure a focus associated with each of the radiation sources. 115. The lithography apparatus of embodiment 113 or embodiment 114, wherein the sensor is a knife edge focus detector.

116. A lithography apparatus comprising: a substrate holder configured to hold a substrate; a modulator comprising a plurality of individually controllable radiation sources, the modulator being grouped And providing a plurality of light beams modulated according to a desired pattern to an exposed area of the substrate, and configured to move each of the plurality of radiation sources relative to the exposed area; a transmitter, the The transmitter is configured to wirelessly transmit a signal and/or power to the plurality of radiation sources to separately control and/or power the plurality of radiation sources; and a projection system configured to The modulated beam is projected onto the substrate.

117. The lithography apparatus of embodiment 116, wherein the signal comprises a plurality of signals, and wherein the lithography apparatus further comprises a demultiplexing to transmit each of the plurality of signals toward a respective one of the plurality of sources. Device.

118. A lithography apparatus comprising: a substrate holder configured to hold a substrate; a modulator comprising a plurality of individually controllable radiation sources, the modulator being grouped And providing a plurality of light beams modulated according to a desired pattern to an exposed area of the substrate, and configured to move each of the plurality of radiation sources relative to the exposed area, the plurality of radiation sources Arranging in or on a movable structure; a single line connecting a controller to the movable structure to transmit a plurality of signals and/or power to the plurality of radiation sources for respective control and/or Powering the plurality of radiation sources; and a projection system configured to project the modulated light beams onto the substrate.

119. The lithography apparatus of embodiment 118, wherein the signal comprises a plurality of signals, and wherein the lithography apparatus further comprises a demultiplexing to transmit each of the plurality of signals toward a respective one of the plurality of sources. Device. 120. The lithography apparatus of embodiment 118 or embodiment 119, wherein the line comprises an optical line.

121. A lithography apparatus comprising: a substrate holder configured to hold a substrate; a modulator comprising a plurality of individually controllable radiation sources, the modulator being grouped And providing a plurality of light beams modulated according to a desired pattern to an exposed area of the substrate, and configured to move each of the plurality of radiation sources relative to the exposed area; a sensor, The sensor is configured to measure a characteristic that has been or is to be transmitted by the at least one of the plurality of radiation sources toward the substrate; and a projection system configured to: The modulated beam is projected onto the substrate.

122. The lithography apparatus of embodiment 121, wherein at least a portion of the sensor is located in or on the substrate holder.

123. The lithography apparatus of embodiment 122, wherein the at least a portion of the sensor is located in or on the substrate holder at a location external to a region on which the substrate is supported on the substrate holder.

The lithography apparatus of any one of embodiments 121 to 123, wherein at least a portion of the sensor is located at one side of the substrate that extends substantially in a scanning direction of one of the substrates in use.

The lithography apparatus of any one of embodiments 121 to 124, wherein at least a portion of the sensor is mounted in or on a frame for supporting the movable structure. 126. The lithography apparatus of any one of embodiments 121 to 125, wherein the sensor is configured to measure radiation from the at least one radiation source external to the exposed area. 127. The lithography apparatus of any one of embodiments 121 to 126, wherein at least a portion of the sensor is movable. 128. The lithography apparatus of any of embodiments 121 to 127, further comprising a controller configured to calibrate the at least one radiation source based on the sensor result.

129. A lithography apparatus comprising: a substrate holder configured to hold a substrate; a modulator comprising a plurality of individually controllable radiation sources, the modulator being grouped And providing a plurality of light beams modulated according to a desired pattern to an exposed area of the substrate, and configured to move each of the plurality of radiation sources relative to the exposed area, the plurality of radiation sources Arranging in or on a movable structure; a sensor for measuring a position of the movable structure; and a projection system configured to modulate the same The beam is projected onto the substrate.

130. The lithography apparatus of embodiment 129, wherein at least a portion of the sensor is mounted in or on a frame that supports the movable structure. 131. A lithography apparatus comprising: a substrate holder configured to hold a substrate; a modulator comprising a plurality of individually controllable radiation sources, the modulator being grouped And providing a plurality of light beams modulated according to a desired pattern to an exposed area of the substrate, and configured to move each of the plurality of radiation sources relative to the exposed area, the plurality of radiation sources Each of the sensors has or provides an identification; a sensor configured to detect the identification; and a projection system configured to project the modulated beam to On the substrate.

132. The lithography apparatus of embodiment 131, wherein at least a portion of the sensor is mounted in or on a frame supporting one of the plurality of radiation sources. 133. The lithography apparatus of embodiment 131 or embodiment 132, wherein the identifying comprises a frequency of radiation from a respective radiation source. 134. The lithography apparatus of any one of embodiments 131 to 133, wherein the identification comprises at least one selected from the group consisting of: a code, a radio frequency identification, or a label.

135. A lithography apparatus comprising: a substrate holder configured to hold a substrate; a modulator comprising a plurality of individually controllable radiation sources, the modulator being grouped And providing a plurality of light beams modulated according to a desired pattern to an exposed area of the substrate, and configured to move each of the plurality of radiation sources relative to the exposed area; a sensor, The sensor is configured to detect radiation from at least one of the plurality of radiation sources that is redirected by the substrate; and a projection system configured to modulate the same The beam is projected onto the substrate.

136. The lithography apparatus of embodiment 135, wherein the sensor is configured to determine a portion of the spot of the radiation from the at least one radiation source incident on the substrate based on the redirected radiation . The lithography apparatus of any one of embodiments 70 to 136, wherein the modulator is configured to rotate the at least one radiation source about an axis substantially parallel to a direction of propagation of one of the plurality of beams. 138. The lithography apparatus of any one of embodiments 70 to 137, wherein the modulator is configured to translate at least one radiation source upward in a direction transverse to a direction of propagation of one of the plurality of beams.

139. The lithography apparatus of any one of embodiments 70 to 138, wherein the modulator comprises a beam deflector configured to move the plurality of beams.

140. The lithography apparatus of embodiment 139, wherein the beam deflector is selected from the group consisting of a mirror, a chirp, or an acousto-optic modulator. 141. The lithography apparatus of embodiment 139, wherein the beam deflector comprises a polygon. 142. The lithography apparatus of embodiment 139, wherein the beam deflector is configured to vibrate. 143. The lithography apparatus of embodiment 139, wherein the beam deflector is configured to rotate.

144. The lithography apparatus of any one of embodiments 70 to 143, wherein the substrate holder is configured to move the substrate in a direction along which the plurality of beams are provided. 145. The lithography apparatus of embodiment 144, wherein the movement of the substrate is a rotation.

146. The lithography apparatus of any one of embodiments 70 to 145, wherein the plurality of radiation sources are movable together. 147. The lithography apparatus of any one of embodiments 70 to 146, wherein the plurality of radiation sources are configured in a circular manner. 148. The lithography apparatus of any one of embodiments 70 to 147, wherein the plurality of radiation sources are disposed in a plate and spaced apart from each other. 149. The lithography apparatus of any one of embodiments 70 to 148, wherein the projection system comprises a lens array. The lithography apparatus of any one of embodiments 70 to 149, wherein the projection system consists essentially of a lens array. 151. The lithography apparatus of embodiment 149 or embodiment 150, wherein one lens of the lens array has a high numerical aperture, and the lithography apparatus is configured to place the substrate in the radiation associated with the lens Outside of the focus, the numerical aperture of the lens is effectively reduced.

152. The lithography apparatus of any one of embodiments 70 to 151, wherein each of the radiation sources comprises a laser diode. 153. The lithography apparatus of embodiment 152, wherein each of the laser diodes is configured to emit radiation having a wavelength of about 405 nanometers. 154. The lithography apparatus of any one of embodiments 70 to 153, further comprising a temperature controller configured to maintain the plurality of radiation sources at a substantially constant temperature during exposure .

155. The lithography apparatus of embodiment 154, wherein the controller is configured to heat the plurality of radiation sources to a temperature at or near one of the substantially constant temperatures prior to exposure.

156. The lithography apparatus of any one of embodiments 70 to 155, comprising at least three separate arrays disposed along a direction, each of the arrays comprising a plurality of radiation sources.

157. The lithography apparatus of any one of embodiments 70 to 156, wherein the plurality of radiation sources comprises at least about 1200 radiation sources. 158. The lithography apparatus of any one of embodiments 70 to 157, further comprising an alignment sensor for determining at least one of the plurality of radiation sources and the Alignment between the substrates. 159. The lithography apparatus of any one of embodiments 70 to 158, further comprising a one-step sensor for determining one of the substrate relative to at least one of the plurality of beams A position of focus. 160. The lithography apparatus of embodiment 158 or embodiment 159, further comprising a controller configured to modify the pattern based on aligning the sensor results and/or the level sensor results.

161. The lithography apparatus of any one of embodiments 70 to 160, further comprising a controller configured to measure a temperature based on a temperature of one of the plurality of radiation sources The pattern is altered by a measurement of a temperature associated with at least one of the plurality of radiation sources. 162. The lithography apparatus of any one of embodiments 70 to 161, further comprising a sensor for measuring at least one of the plurality of radiation sources that have been or are to be utilized by the plurality of radiation sources A property that transmits radiation toward the substrate.

163. A lithography apparatus comprising: a plurality of individually controllable radiation sources configured to provide a plurality of beams modulated according to a desired pattern; a lens array, the lens array A plurality of lenslets are included; and a substrate holder configured to hold a substrate, wherein during use, in addition to the lens array, there are no other optical devices between the plurality of radiation sources and the substrate .

164. A programmable patterning element, comprising: a substrate having an array of radiation emitting diodes spaced apart in at least one direction; and a lens array in which the radiation array is One of the polar bodies radiates on the downstream side.

165. The programmable patterning element of embodiment 164, wherein the lens array comprises a microlens array having a plurality of microlenses, the number of the microlenses corresponding to the number of radiation emitting diodes, and being positioned The radiation selectively transmitted by the respective radiation emitting diodes in the radiation emitting diodes is focused into a micro spot array.

166. The programmable patterning element of embodiment 164 or embodiment 165, wherein the radiation emitting dipole systems are spaced apart in at least two orthogonal directions.

167. The programmable patterning element of any one of embodiments 164 to 166, wherein the radiation emitting diodes are embedded in a low thermal conductivity material.

168. A method of fabricating a component, comprising: using a plurality of individually controllable radiation sources to provide a plurality of beams modulated according to a desired pattern toward an exposed region of a substrate; moving at least one of the plurality of radiation sources Providing the plurality of beams simultaneously such that only less than all of the plurality of sources of radiation can expose the exposed region at any one time; and projecting the plurality of beams onto the substrate.

169. A method of fabricating a component, comprising: using a plurality of individually controllable radiation sources to provide a plurality of beams modulated according to a desired pattern; moving at least one of the plurality of radiation sources to one of its emitted radiation Between the portion and a portion of the radiation that is not emitted; and projecting the plurality of beams onto a substrate.

170. A method of fabricating a component, comprising: using a plurality of individually controllable radiation sources to provide a beam modulated according to a desired pattern; and using the lens array to extract the plurality of individually controllable radiation sources from the plurality of individually controllable radiation sources The modulated beam is projected onto a substrate.

171. A method of fabricating a component, comprising: using a plurality of individually controllable radiation sources to provide a plurality of beams of electromagnetic radiation modulated according to a desired pattern; and moving the plurality of radiation relative to the exposure region during exposure to an exposure region At least one source of radiation, such that radiation from the at least one source simultaneously abuts or overlaps radiation from at least one other source of the plurality of sources; and projects the plurality of beams onto a substrate on.

172. The method of any one of embodiments 168 to 171, wherein the moving comprises rotating the at least one radiation source about an axis substantially parallel to a direction of propagation of the plurality of beams.

The method of any one of embodiments 168 to 172, wherein the moving comprises translating at least one radiation source in a direction transverse to a direction of propagation of one of the plurality of beams.

174. The method of any one of embodiments 168 to 173, comprising moving the plurality of beams by using a beam deflector.

175. The method of embodiment 174, wherein the beam deflector is selected from the group consisting of a mirror, a chirp, or an acousto-optic modulator.

176. The method of embodiment 174, wherein the beam deflector comprises a polygon.

177. The method of embodiment 174, wherein the beam deflector is configured to vibrate.

178. The method of embodiment 174, wherein the beam deflector is configured to rotate.

179. The method of any one of embodiments 168 to 178, comprising moving the substrate in a direction along which the plurality of beams are provided.

180. The method of embodiment 179, wherein the movement of the substrate is a rotation.

181. The method of any one of embodiments 168 to 180, comprising moving the plurality of radiation sources together.

182. The method of any one of embodiments 168 to 181, wherein the plurality of radiation sources are configured in a circular manner.

The method of any one of embodiments 168 to 182, wherein the plurality of radiation sources are disposed in a plate and spaced apart from each other.

184. The method of any one of embodiments 168 to 183, wherein the projecting comprises forming an image of each of the beams of light onto the substrate using a lens array.

185. The method of any one of embodiments 168 to 184, wherein the projecting comprises forming an image of each of the beams of light onto the substrate using substantially only one lens array.

186. The method of any one of embodiments 168 to 185, wherein each of the sources of radiation comprises a laser diode.

187. The method of embodiment 186, wherein each of the laser diodes is configured to emit radiation having a wavelength of about 405 nm.

188. A flat panel display manufactured according to the method of any one of embodiments 168 to 187.

189. An integrated circuit component manufactured according to the method of any one of embodiments 168 to 187.

190. A radiation system comprising: a plurality of movable radiation arrays, each radiation array comprising a plurality of individually controllable radiation sources configured to provide modulation according to a desired pattern a plurality of beams; and a motor configured to move each of the arrays of radiation.

191. The radiation system of embodiment 190, wherein the motor is configured to rotate each of the arrays of radiation about an axis substantially parallel to a direction of propagation of one of the plurality of beams.

192. The radiation system of embodiment 190 or embodiment 191, wherein the motor is configured to translate each of the arrays of radiation in a direction transverse to a direction of propagation of one of the plurality of beams.

193. The radiation system of any one of embodiments 190 to 192, further comprising a beam deflector configured to move the plurality of beams.

194. The radiation system of embodiment 193, wherein the beam deflector is selected from the group consisting of a mirror, a cymbal or an acousto-optic modulator.

195. The radiation system of embodiment 193, wherein the beam deflector comprises a polygon.

196. The radiation system of embodiment 193, wherein the beam deflector is configured to vibrate.

197. The radiation system of embodiment 193, wherein the beam deflector is configured to rotate.

198. The radiation system of any one of embodiments 190 to 197, wherein the plurality of radiation sources of each of the radiation arrays are moveable together.

199. The radiation system of any one of embodiments 190 to 198, wherein the plurality of radiation sources of each of the radiation arrays are configured in a circular manner.

The radiation system of any one of embodiments 190 to 199, wherein the plurality of radiation sources of each of the radiation arrays are disposed in a plate and spaced apart from one another.

The radiation system of any one of embodiments 190 to 200, further comprising an array of lenses associated with each of the arrays of radiation.

202. The radiation system of embodiment 201, wherein each of the plurality of radiation sources of each of the radiation arrays is associated with a lens of a lens array, the lens array and the radiation array Associated.

203. The radiation system of any one of embodiments 190 to 202, wherein each of the plurality of radiation sources of each of the radiation arrays comprises a laser diode.

204. The radiation system of embodiment 203, wherein each of the laser diodes is configured to emit radiation having a wavelength of about 405 nanometers.

205. A lithography apparatus for exposing a substrate to radiation, the apparatus comprising a programmable patterning element having from 100 to 25,000 self-emissive individual addressable devices.

206. The lithography apparatus of embodiment 205, comprising at least 400 self-emissive individual addressable devices.

207. The lithography apparatus of embodiment 205, comprising at least 1000 self-emission individual addressable devices.

208. A lithography apparatus according to any of embodiments 205 to 207, comprising 10,000 or less self-emission individual addressable devices.

209. A lithography apparatus according to any of embodiments 205 to 207, comprising 5,000 or less self-emission individual addressable devices.

210. The lithography apparatus of any one of embodiments 205 to 209, wherein the self-emission individual addressable devices are laser diodes.

The lithography apparatus of any one of embodiments 205 to 209, wherein the self-emissive individual addressable devices are configured to have a spot size on the substrate selected from the range of 0.1 micron to 3 microns.

The lithography apparatus of any one of embodiments 205 to 209, wherein the self-emission individual addressable devices are configured to have a spot size of about 1 micron on the substrate.

213. A lithography apparatus for exposing a substrate to radiation, the apparatus comprising a programmable patterning element having a normalized to 10 cm exposure field length 100 to 25,000 self-emission individual addressable devices.

214. The lithography apparatus of embodiment 213, comprising at least 400 self-emissive individual addressable devices.

215. The lithography apparatus of embodiment 213, comprising at least 1000 self-emission individual addressable devices.

216. A lithography apparatus according to any of embodiments 213 to 215, comprising 10,000 or less self-emission individual addressable devices.

217. A lithography apparatus according to any of embodiments 213 to 215, comprising 5,000 or less self-emission individual addressable devices.

218. The lithography apparatus of any one of embodiments 213 to 217, wherein the self-emission individual addressable devices are laser diodes.

</ RTI> The lithography apparatus of any one of embodiments 213 to 217, wherein the self-emissive individual addressable devices are configured to have a spot size on the substrate selected from the range of 0.1 micron to 3 microns.

The lithography apparatus of any one of embodiments 213 to 217, wherein the self-emissive individual addressable devices are configured to have a spot size of about 1 micron on the substrate.

221. A programmable patterning element comprising a rotatable disk having from 100 to 25,000 self-emissive individually addressable devices.

222. The programmable patterning element of embodiment 221, wherein the disk comprises at least 400 self-emissive individually addressable devices.

223. The programmable patterning element of embodiment 221, wherein the disk comprises at least 1000 self-emissive individual addressable devices.

224. The programmable patterning element of any one of embodiments 221 to 223, wherein the disk comprises 10,000 or less self-emission individual addressable devices.

225. The programmable patterning element of any one of embodiments 221 to 223, wherein the disk comprises 5,000 or less self-emission individual addressable devices.

226. The programmable patterning element of any one of embodiments 221 to 225, wherein the self-emissive individual addressable devices are laser diodes.

227. Use of one or more of the present invention in the manufacture of a flat panel display.

228. Use of one or more of the present invention in an integrated circuit package.

229. A lithography method comprising exposing a substrate to radiation using a programmable patterning element having a self-emissive device, wherein the programmable patterning for operating the self-emissive device during the exposure The power consumption of the components is less than 10 kW.

230. The method of embodiment 229, wherein the power consumption is less than 5 kilowatts.

231. The method of embodiment 229 or embodiment 230, wherein the power consumption is at least 100 milliwatts.

232. The method of any one of embodiments 229 to 231, wherein the self-emissive devices are laser diodes.

233. The method of embodiment 232, wherein the laser diodes are blue-violet laser diodes.

234. A method of lithography comprising exposing a substrate to radiation using a programmable patterning element having a self-emissive device, wherein when in use, the optical output of each of the emitting devices is at least 1 milliwatt.

235. The method of embodiment 234, wherein the optical output is at least 10 milliwatts.

236. The method of embodiment 234, wherein the optical output is at least 50 milliwatts.

237. The method of any one of embodiments 234 to 236, wherein the optical output is less than 200 milliwatts.

238. The method of any one of embodiments 234 to 237, wherein the self-emissive devices are laser diodes.

239. The method of embodiment 238, wherein the laser diodes are blue-violet laser diodes.

240. The method of embodiment 234, wherein the optical output is greater than 5 milliwatts but less than or equal to 20 milliwatts.

241. The method of embodiment 234, wherein the optical output is greater than 5 milliwatts but less than or equal to 30 milliwatts.

242. The method of embodiment 234, wherein the optical output is greater than 5 milliwatts but less than or equal to 40 milliwatts.

243. The method of any one of embodiments 234 to 242, wherein the self-emissive devices operate in a single mode.

244. A lithography apparatus comprising: a programmable patterning element having a self-emissive device; and a rotatable frame having a means for receiving from the self-emissive device Radiation optics, which are refractive optics.

245. A lithography apparatus comprising: a programmable patterning element having a self-emissive device; and a rotatable frame having a means for receiving from the self-emissive device A radiation optic that does not have reflective optics for receiving radiation from any or all of the self-emissive devices.

246. A lithography apparatus comprising: a programmable patterning element; and a rotatable frame comprising a plate having an optical device, a surface of the plate having the optical device being flat.

247. Use of one or more of the present invention in the manufacture of flat panel displays.

248. Use of one or more of the present invention in an integrated circuit package.

249. A flat panel display manufactured according to any of the methods.

250. An integrated circuit component fabricated in accordance with any of the methods.

251. A lithography apparatus comprising: an optical cylinder configured to produce a pattern on a target portion of a substrate, the optical cylinder comprising: a controllable device configured to be configured To provide a light beam; and a projection system configured to project the light beam onto the target portion; an actuator configured to move at least a portion of the optical cylinder relative to the substrate a measurement system configured to measure a position of the at least one portion of the optical cylinder; and a controller configured to drive the controllable device, the controller having the One of the measurement systems outputs a signal.

252. The lithography apparatus of embodiment 251, wherein the metrology system comprises: a position sensor configured to provide a position sensing indicative of a position of the at least one portion of the optical cylinder a reference data table configured to provide a position reference signal; and a phase locked loop structure configured to derive the output signal using the position sensor signal This reference sheet is incorporated into the phase locked loop structure.

253. The lithography apparatus of embodiment 252, wherein the phase locked loop structure comprises a comparator, the first input of the comparator having the position sensor signal, and the second input of the comparator is provided by the The position reference signal provided in the reference sheet.

254. The lithography apparatus of embodiment 253, wherein the phase locked loop structure comprises a voltage controlled oscillator, the voltage controlled oscillator being fed by a filtered output signal of one of the comparators, the voltage controlled oscillator An oscillator output signal is provided to the controller as the output signal.

255. The lithography apparatus of embodiment 254, wherein the oscillator output signal is provided as a clock signal to the reference data table, or one of the position sensor sampling circuits, or both.

256. The lithography apparatus of embodiment 254 or embodiment 255, wherein one of the oscillator output signals has a clock frequency of at least 10 times a sensor signal periodicity, and ideally, at least 50 times a sensor signal Periodic.

257. The lithography apparatus of any one of embodiments 251 to 256, wherein the controllable device is a self-emissive contrast element.

258. A method of fabricating a component, comprising: generating a pattern onto a target portion of a substrate by an optical cylinder, the generating comprising: providing a light beam using a controllable device; and the light beam by a projection system Projecting onto the target portion; and moving at least a portion of the optical cylinder relative to the substrate; measuring a position of the at least one portion of the optical cylinder by a metrology system; and outputting a signal in response to one of the measurement systems To drive the controllable device.

259. The method of embodiment 258, wherein measuring the at least a portion of the optical cylinder comprises: providing a position sensor signal indicative of the position of the at least a portion of the optical cylinder by a position sensor Providing a position reference signal by a reference data table; and deriving the output signal from the position sensor signal by a phase locked loop structure, the reference material table being incorporated in the phase locked loop structure.

260. The method of embodiment 259, wherein the phase-locked loop structure comprises a comparator, the method comprising comparing the position sensor signal with the position reference signal provided by the reference data table by the comparator.

261. The method of embodiment 260, wherein the phase-locked loop structure comprises a voltage controlled oscillator, the method comprising inputting the voltage controlled oscillator by one of the comparators, the filtered output signal, and the voltage control One of the oscillator oscillator output signals synchronously drives the controllable device.

262. The method of embodiment 261, wherein the oscillator output signal is provided as a clock signal to the reference data table, or one of the position sensor sampling circuits, or both.

263. The method of embodiment 261 or embodiment 262, wherein one of the oscillator output signals has a clock frequency of at least 10 times a sensor signal periodicity, and ideally, at least 50 times a sensor signal periodicity .

264. The method of any one of embodiments 259 to 263, wherein the input of the reference data table is determined by: recording the sense of position throughout a plurality of turns of the at least a portion of the moving optical cylinder a detector signal; determining a periodicity from the recorded position sensor signal; resampling the recorded position sensor signal to a resampling rate that corresponds to the periodicity; and the resampled position sensor The signal is stored in the reference data sheet.

265. The method of embodiment 264, wherein the resampling is performed from the recorded sensor signal over a plurality of periodic times.

266. The method of any one of embodiments 258 to 265, wherein the controllable device is a self-emissive contrast element.

267. A computer product having machine executable instructions executable by a machine to perform a method, the method comprising: generating a pattern onto a target portion of a substrate by an optical cylinder, the generating The method includes: using a controllable device to provide a light beam; projecting the light beam onto the target portion by a projection system; and moving at least a portion of the optical cylinder relative to the substrate; measuring the optical by a measurement system Positioning the at least one portion of the cylinder; and driving the controllable device in response to a position signal of the measurement system.

Although reference may be made herein specifically to the use of a lithography apparatus in the manufacture of a particular component or structure (eg, an integrated circuit or a flat panel display), it should be understood that the lithographic apparatus and lithography methods described herein may have other apps. Applications include, but are not limited to, manufacturing integrated circuits, integrated optical systems, guidance and detection patterns for magnetic domain memories, flat panel displays, LCDs, OLED displays, thin film magnetic heads, microelectromechanical components (MEMS), low light Electromechanical systems (MOEMS), DNA wafers, packages (eg, flip chip, redistribution, etc.), flexible displays or electronics (the flexible displays or electronics can be scrollable, bendable ( Such as paper) and maintain a non-deformable, conformable, strong, thin and / or lightweight display or electronic device, such as a flexible plastic display, and so on. Also, for example, in a flat panel display, the apparatus and method can be used to assist in the creation of various layers, such as thin film transistor layers and/or color filter layers. Those skilled in the art should understand that in the context of the content of such alternative applications, any use of the terms "wafer" or "die" herein may be considered as a more general term with the term "substrate" or "target portion". Synonymous. The preparations herein may be processed before or after exposure, for example, in a coating development system (eg, a tool that typically applies a layer of resist to the substrate and develops the exposed resist), a metrology tool, and/or a detection tool. And the substrate. Where applicable, the disclosure herein may be applied to such and other substrate processing tools. Additionally, the substrate can be processed more than once, for example, to produce a multilayer IC, such that the term "substrate" as used herein may also refer to a substrate that already contains multiple processed layers.

The terms "radiation" and "beam" as used herein encompass all types of electromagnetic radiation, including ultraviolet (UV) radiation (eg, having a 2020 nm, 248 nm, 193 nm, 157 nm or 126 nm wavelength) and extreme ultraviolet (EUV) radiation (eg, having a wavelength in the range of 5 nm to 20 nm); and a particle beam (such as an ion beam or an electron beam).

The flat panel display substrate may have a rectangular shape. A lithography apparatus designed to expose a substrate of this type can provide an exposed area that covers a full width or a portion of the width of the rectangular substrate (eg, one-half of the width). The substrate can be scanned below the exposed area while simultaneously scanning the patterned elements via the patterned beam, or the patterned elements provide a varying pattern. In this way, all or part of the desired pattern is transferred to the substrate. If the exposed area covers the full width of the substrate, the exposure can be completed in a single scan. If the exposed area covers, for example, one-half the width of the substrate, the substrate can be moved laterally after the first scan, and additional scanning is typically performed to expose the remainder of the substrate.

The term "patterned element" as used herein shall be interpreted broadly to refer to any element that can be used to modulate the cross-section of a radiation beam to produce a pattern in a portion of the substrate. It should be noted that, for example, if the pattern imparted to the radiation beam includes a phase shifting feature or a so-called auxiliary feature, the pattern may not exactly correspond to the desired pattern in the target portion of the substrate. Similarly, the pattern ultimately produced on the substrate may not correspond to the pattern formed on the array of individual controllable devices at any instant. In this configuration, it may be the case that the final formation on each portion of the substrate is established over a given period of time or a given number of exposures during pattern and/or relative positional change of the substrate on the individual controllable device array. pattern. Typically, the pattern produced on the target portion of the substrate will correspond to a particular functional layer (eg, a color filter layer or plate in a flat panel display) that is generated in an element (eg, an integrated circuit or flat panel display) in the target portion. The thin film transistor layer in the display). Examples of such patterned elements include, for example, photomasks, programmable mirror arrays, laser diode arrays, light emitting diode arrays, grating light valves, and LCD arrays. A pattern is a patterned element that can be programmed with an electronic component (eg, a computer) (eg, a patterned component that includes a plurality of programmable devices that can individually modulate the intensity of the portion of the radiation beam (eg, in the preceding sentence) All of the elements other than the reticle mentioned)) (including an electronically programmable device having a plurality of programmable devices that impart a pattern to the radiation beam by modulating the phase of the portion of the radiation beam relative to the adjacent portion of the radiation beam) The patterned elements are collectively referred to herein as "contrast elements." In one embodiment, the patterning component comprises at least 10 programmable devices, for example, at least 100 programmable devices, at least 1000 programmable devices, at least 10,000 programmable devices, at least 100,000 programmable Device, at least 1,000,000 programmable devices or at least 10,000,000 programmable devices. Embodiments of several of these elements are discussed in more detail below: - A programmable mirror array. The programmable mirror array can include a matrix addressable surface having a viscoelastic control layer and a reflective surface. The underlying principle implied by this device is, for example, that the addressed region of the reflective surface reflects incident radiation as diffracted radiation, while the unaddressed region reflects incident radiation as non-diffracted radiation. In the case of a suitable spatial filter, the non-diffracting radiation can be filtered out of the reflected beam such that only the diffracted radiation reaches the substrate. In this way, the beam becomes patterned according to the addressing pattern of the matrix addressable surface. It will be appreciated that as an alternative, the filter may filter out the diffracted radiation such that the non-diffracted radiation reaches the substrate. A diffractive optical MEMS element array can also be used in a corresponding manner. The diffractive optical MEMS element can include a plurality of reflective strips that are deformable relative to one another to form a grating that reflects incident radiation as diffracted radiation. A further embodiment of the programmable mirror array uses a matrix configuration of tiny mirrors, each of which can be individually tilted about an axis by applying an appropriate localized electric field or by using a piezoelectric actuator member . The slope defines the state of each mirror. When the device is free of defects, the mirror can be controlled by appropriate control signals from the controller. Each defect free device is controllable to employ any of a range of states to adjust the intensity of its corresponding pixel in the projected radiation pattern. Again, the mirror matrix can be addressed such that the addressed mirror reflects the incident radiation beam in a different direction than the unaddressed mirror; in this manner, the reflected beam can be patterned according to the addressing pattern of the matrix addressable mirror. The appropriate electronic components can be used to perform the required matrix addressing. U.S. Patent Nos. 5,296,891 and 5,523,193, the disclosures of which are hereby incorporated by reference in its entirety by reference in its entirety, in More information on the mirror array mentioned.

- Programmable LCD array. An example of such a configuration is given in U.S. Patent No. 5,229,872, which is incorporated herein by reference.

The lithography apparatus can include one or more patterned elements, such as one or more contrast elements. For example, a lithography apparatus can have a plurality of individual controllable device arrays, each controlled independently of each other. In this configuration, some or all of the individual controllable device arrays may have a common illumination system (or part of a lighting system), a common support structure for an individual controllable device array, and/or a common projection system (or projection system) At least one of the parts).

It will be appreciated that the pattern "displayed" on an array of individually controllable devices may be substantially different, for example, when using feature pre-bias, optical proximity correction features, phase change techniques, and/or multiple exposure techniques. The pattern of the layer that is ultimately transferred to the layer of the substrate or to the substrate. Similarly, the pattern ultimately produced on the substrate may not correspond to the pattern formed on the array of individual controllable devices at any instant. In this configuration, it may be the case that the final formation on each portion of the substrate is established over a given period of time or a given number of exposures during pattern and/or relative positional change of the substrate on the individual controllable device array. pattern.

The projection system and/or illumination system can include various types of optical components for guiding, shaping, or controlling the radiation beam, such as refractive, reflective, magnetic, electromagnetic, electrostatic, or other types of optical components, or any combination thereof.

The lithography device can be of the type having two (eg, dual stage) or more than two substrate stages (and/or two or more patterned element stages). In such "multi-stage" machines, additional stations may be used in parallel, or preliminary steps may be performed on one or more stations while one or more other stations are used for exposure.

The lithography apparatus can also be of the type wherein at least a portion of the substrate can be covered by an "immersion liquid" (eg, water) having a relatively high refractive index to fill a space between the projection system and the substrate. The immersion liquid can also be applied to other spaces in the lithography apparatus, such as the space between the patterned elements and the projection system. The immersion technique is used to increase the NA of the projection system. The term "immersion" as used herein does not mean that a structure (eg, a substrate) must be immersed in a liquid, but rather only means that the liquid is located between the projection system and the substrate during exposure.

Additionally, the device can be provided with a fluid processing unit to allow interaction between the fluid and the irradiated portion of the substrate (eg, to selectively attach the chemical to the substrate or selectively modify the surface structure of the substrate).

In an embodiment, the substrate has a substantially circular shape, optionally with notches and/or flattened edges along portions of its perimeter. In an embodiment, the substrate has a polygonal shape, such as a rectangular shape. Embodiments in which the substrate has a substantially circular shape include embodiments in which the substrate has a diameter of at least 25 millimeters, for example, at least 50 millimeters, at least 75 millimeters, at least 100 millimeters, at least 125 millimeters, at least 150 millimeters, at least 175 millimeters, At least 200 mm, at least 250 mm or at least 300 mm. In an embodiment, the substrate has a diameter of at most 500 mm, at most 400 mm, at most 350 mm, at most 300 mm, at most 250 mm, at most 200 mm, at most 150 mm, at most 100 mm, or at most 75 mm. Embodiments of a substrate-based polygon (eg, a rectangle) include embodiments in which at least one side (eg, at least two sides or at least three sides) of the substrate has a length of at least 5 centimeters, eg, at least 25 centimeters, at least 50 centimeters, At least 100 cm, at least 150 cm, at least 200 cm or at least 250 cm. In an embodiment, at least one side of the substrate has a length of at most 1000 cm, for example, at most 750 cm, at most 500 cm, at most 350 cm, at most 250 cm, at most 150 cm, or at most 75 cm. In one embodiment, the substrate is a rectangular substrate having a length of from about 250 cm to about 350 cm and a width of from about 250 cm to about 300 cm. The thickness of the substrate can vary, and to some extent, can depend, for example, on the substrate material and/or substrate size. In one embodiment, the thickness is at least 50 microns, such as at least 100 microns, at least 200 microns, at least 300 microns, at least 400 microns, at least 500 microns, or at least 600 microns. In one embodiment, the substrate has a thickness of up to 5000 microns, for example, up to 3500 microns, up to 2500 microns, up to 1750 microns, up to 1250 microns, up to 1000 microns, up to 800 microns, up to 600 microns, up to 500 microns, up to 400 Micron or up to 300 microns. The substrates referred to herein may be treated before or after exposure, for example, in a coating development system, typically a resist layer is applied to the substrate and the exposed resist is developed. The properties of the substrate can be measured, for example, in a metrology tool and/or a detection tool before or after exposure.

In an embodiment, a resist layer is provided on the substrate. In an embodiment, the substrate is a wafer, such as a semiconductor wafer. In one embodiment, the wafer material is selected from the group consisting of Si, SiGe, SiGeC, SiC, Ge, GaAs, InP, and InAs. In one embodiment, the wafer is a III/V compound semiconductor wafer. In one embodiment, the wafer is a germanium wafer. In an embodiment, the substrate is a ceramic substrate. In an embodiment, the substrate is a glass substrate. The glass substrate can be used in the manufacture of, for example, flat panel displays and liquid crystal display panels. In one embodiment, the substrate is a plastic substrate. In one embodiment, the substrate is transparent (for the human eye). In an embodiment, the substrate is colored. In one embodiment, the substrate is colorless.

Although the patterned element 104 is depicted and/or depicted as being above the substrate 114 in an embodiment, it may alternatively or additionally be located below the substrate 114. Additionally, in one embodiment, the patterned elements 104 and the substrate 114 may be side by side, for example, the patterned elements 104 and the substrate 114 extend vertically and the pattern is projected horizontally. In an embodiment, the patterning element 104 is provided to expose at least two opposing sides of the substrate 114. For example, at least two patterned elements 104 may be present on at least each of the opposing sides of the substrate 114 to expose the sides. In one embodiment, there may be a single patterned element 104 for projecting one side of the substrate 114, and appropriate optics for projecting a pattern from the single patterned element 104 onto the other side of the substrate 114 (eg, , the beam guides the mirror).

Although the specific embodiments of the invention have been described above, it is understood that the invention may be practiced otherwise than as described. For example, the present invention can take the form of a computer program containing one or more sequences of machine readable instructions describing a method as disclosed above; or a data storage medium (eg, semiconductor memory, disk) Or a disc), the data storage medium has the computer program stored therein.

In addition, while the invention has been disclosed in the context of specific embodiments and examples, it will be understood by those skilled in the art that the present invention extends to other alternative embodiments and/or uses of the present invention and It is obviously modified and equivalent. In addition, many modifications of the present invention will be apparent to those skilled in the <RTIgt; For example, it is contemplated that various combinations or sub-combinations of the specific features and aspects of the embodiments may be made, and such combinations or sub-combinations are still within the scope of the invention. Therefore, it is understood that various features and aspects of the disclosed embodiments can be combined or substituted with each other to form a variation of the invention. For example, in one embodiment, the movable individually controllable device embodiment of FIG. 5 can be combined with, for example, a non-removable individual controllable device array to provide or have a backup system.

Accordingly, while the various embodiments of the invention have been described, Various changes in form and detail may be made in the embodiments without departing from the spirit and scope of the invention. Therefore, the scope and spirit of the invention should not be construed as being limited by the scope of the invention.

100. . . Photographic projection device

102. . . Individual addressable devices/individual controllable devices/radiation-emitting diodes/radiation-emitting components

104. . . Patterned component

106. . . Object holder/object table/substrate table

108. . . Projection system

110. . . Patterned radiation beam / modulated radiation beam

114. . . Substrate/wafer

116. . . Positioning element

120. . . Target part

134. . . Position sensor

136. . . Pedestal

138. . . Interference measuring beam

150. . . Alignment sensor / level sensor

160. . . frame

170. . . Lens array

172. . . Second lens

174. . . Aperture stop

176. . . First lens

200. . . Individual Addressable Device 102 Array / Individual Controllable Device 102 Array / 2D Radiated Emission Diode Array

204. . . Exposure area

206. . . Axis

208. . . direction

210. . . Individual addressable device 102 subarray

212. . . Opening

214. . . supporting item

216. . . motor

218. . . Rotatable structure

220. . . motor

222. . . Fluid conduction channel

224. . . Supply

226. . . Return item

228. . . Heat exchanger and pump

230. . . heat sink

232. . . heat sink

234. . . Sensor

236. . . Fluid confinement structure

238. . . fluid

240. . . Fluid supply element

242. . . Imaging lens / optics

244. . . Actuator

246. . . The body of the array 200

248. . . Pore Structure

250. . . board

252. . . Spatial coherence destruction element

254. . . Focus or level sensor

256. . . Focus detection beam

258. . . Half silver plated mirror

260. . . Knife edge

262. . . Detector

400. . . Controller

402. . . transceiver

404. . . line

406. . . transceiver

500. . . Sensor

502. . . Beam redirection structure

504. . . structure

506. . . structure

508. . . Actuator

510. . . Sensor

520. . . Sensor

522. . . Exposure area

600. . . Rotatable polygon

602. . . Axis

604. . . Surface of polygon 600

606. . . Surface of polygon 600

700. . . RF coupling

800. . . Imaging line

801. . . Runner

802. . . lens

802A. . . lens

802B. . . lens

803. . . direction

804. . . Imaging lens

806. . . Collimating lens

808. . . Imaging lens

810. . . Imaging lens

812. . . lens

814. . . Field lens

815. . . Direction/part

816. . . Imaging lens

817. . . Optical plane

818. . . Imaging lens

820. . . Parabolic mirror

821. . . Rotation axis

822. . . Parabolic mirror

823. . . The imaging lens 242 is assembled from a radius of the axis of rotation 821

824. . . Anti-rotator

826. . . Parabolic mirror

828. . . Parabolic mirror

829. . . X direction

830. . . Anti-rotator

831. . . Scanning direction

832. . . Folding mirror

833. . . direction

834. . . Ridge top

836. . . Actuator

838. . . frame

840. . . frame

890. . . Movable board

900. . . Lithography device

902. . . Substrate table

904. . . Positioning element

906. . . Individual controllable radiation source / self-emissive contrast element

908. . . frame

910. . . Actuator/motor

912. . . Rotating frame

914. . . Movable optics

916. . . Axis

918. . . motor

920. . . Lens/projection system

922. . . Pore Structure

924. . . Projection system / field lens

926. . . frame

928. . . Substrate

930. . . Projection system / imaging lens

932. . . Alignment/level sensor

934. . . Array

936. . . Motor/actuator

938. . . Encoder/sensor

940. . . Position signal processing unit/processing unit or processor

942. . . Control system or controller

944. . . Phase comparator

946. . . filter

948. . . Control oscillator

950. . . Reference sheet

A. . . Rotation axis

B. . . Rotation axis

FWD. . . Free working distance

P. . . spacing

R. . . Spot exposure

R1. . . Column

R2. . . Column

S. . . Radiation spot

SA. . . Radiated spot S array

SE. . . Spot exposure

X. . . direction

Y. . . direction

Z. . . direction

1 depicts a schematic side view of a lithography apparatus in accordance with an embodiment of the present invention.

2 depicts a schematic top view of a lithography apparatus in accordance with an embodiment of the present invention.

3 depicts a schematic top view of a lithography apparatus in accordance with an embodiment of the present invention.

4 depicts a schematic top view of a lithography apparatus in accordance with an embodiment of the present invention.

Figure 5 depicts a schematic top view of a lithography apparatus in accordance with an embodiment of the present invention.

6(A) through 6(D) are schematic plan and side views depicting portions of a lithography apparatus in accordance with an embodiment of the present invention.

7(A) through 7(O) depict schematic top and side views of portions of a lithography apparatus in accordance with an embodiment of the present invention.

Figure 7 (P) depicts a power/forward current plot of an individual addressable device in accordance with an embodiment of the present invention.

Figure 8 depicts a schematic side view of a lithography apparatus in accordance with an embodiment of the present invention.

Figure 9 depicts a schematic side view of a lithography apparatus in accordance with an embodiment of the present invention.

Figure 10 depicts a schematic side view of a lithography apparatus in accordance with an embodiment of the present invention.

11 depicts a schematic top view of an array of individually controllable devices for a lithography apparatus in accordance with an embodiment of the present invention.

Figure 12 depicts a mode of transferring a pattern to a substrate using an embodiment of the present invention.

Figure 13 depicts a schematic configuration of an optical engine.

14(A) and 14(B) depict schematic side views of portions of a lithography apparatus in accordance with an embodiment of the present invention.

Figure 15 depicts a schematic top view of a lithography apparatus in accordance with an embodiment of the present invention.

Figure 16 (A) depicts a schematic side view of a portion of a lithography apparatus in accordance with an embodiment of the present invention.

Figure 16 (B) depicts the schematic position of the sensing area of the sensor relative to the substrate.

Figure 17 depicts a schematic top view of a lithography apparatus in accordance with an embodiment of the present invention.

Figure 18 depicts a schematic cross-sectional side view of a lithography apparatus in accordance with an embodiment of the present invention.

19 depicts a schematic top view layout of a portion of a lithography apparatus having individual controllable devices that are substantially stationary in an XY plane and optics that are movable relative to individual controllable devices, in accordance with an embodiment of the present invention. .

20 depicts a schematic three-dimensional view of a portion of the lithography apparatus of FIG.

21 depicts a schematic side view layout of a portion of a lithography apparatus having individual controllable devices that are substantially stationary in an XY plane and optically movable relative to individual controllable devices, in accordance with an embodiment of the present invention. The device, and the set of optical devices 242 are shown in three different rotational positions relative to the individual controllable devices.

22 depicts a schematic side view layout of a portion of a lithography apparatus having individual controllable devices that are substantially stationary in the XY plane and optically movable relative to the individual controllable devices, in accordance with an embodiment of the present invention. The device, and the set of optical devices 242 are shown in three different rotational positions relative to the individual controllable devices.

23 depicts a schematic side view layout of a portion of a lithography apparatus having individual controllable devices that are substantially stationary in an XY plane and optically movable relative to individual controllable devices, in accordance with an embodiment of the present invention. The device, and showing the set of optics 242 at five different rotational positions relative to the individual controllable devices.

24 depicts a schematic layout of portions of individually controllable devices 102 when a standard laser diode having a diameter of 5.6 millimeters is used to achieve full coverage across the width of the substrate.

Figure 25 depicts a schematic layout of the detail of Figure 24.

26 depicts a schematic side view layout of a portion of a lithography apparatus having individual controllable devices that are substantially stationary in an XY plane and optically movable relative to individual controllable devices, in accordance with an embodiment of the present invention. Device.

27 depicts a schematic side view layout of a portion of a lithography apparatus having individual controllable devices that are substantially stationary in an XY plane and optically movable relative to individual controllable devices, in accordance with an embodiment of the present invention. Device.

28 depicts a schematic side view layout of a portion of a lithography apparatus having individual controllable devices that are substantially stationary in an XY plane and optically movable relative to individual controllable devices, in accordance with an embodiment of the present invention. The device, and showing the set of optics 242 at five different rotational positions relative to the individual controllable devices.

29 depicts a schematic three-dimensional view of a portion of the lithography apparatus of FIG.

FIG. 30 schematically depicts a configuration of eight lines simultaneously written by a single movable optical device 242 of FIGS. 28 and 29.

Figure 31 depicts a schematic configuration for controlling focus in a configuration of Figures 28 and 29 with a moving ridge.

32 depicts a schematic cross-sectional side view of a lithography apparatus having individual controllable devices that are substantially stationary in an XY plane and relative to individual, in accordance with an embodiment of the present invention, in accordance with an embodiment of the present invention. Controls the movable optics of the device.

Figure 33 depicts a portion of a lithography apparatus in accordance with an embodiment of the present invention.

Figure 34 depicts a top view of a portion of the lithography apparatus of Figure 33.

Figure 35 depicts a schematic block diagram of a device of the lithography apparatus of Figure 33, in accordance with an embodiment of the present invention.

Figure 36 depicts a schematic block diagram in accordance with the embodiment of Figure 35.

906. . . Individual controllable radiation source / self-emissive contrast element

912. . . Rotating frame

924. . . Projection system / field lens

930. . . Projection system / imaging lens

936. . . Motor/actuator

938. . . Encoder/sensor

940. . . Position signal processing unit/processing unit or processor

942. . . Control system or controller

Claims (17)

A lithography apparatus comprising: an optical cylinder configured to produce a pattern on a target portion of a substrate, the optical cylinder comprising: a controllable device configured to provide a light beam; and a projection system configured to project the light beam onto the target portion; an actuator configured to rotate at least a portion of the optical cylinder relative to the substrate; a measurement system configured to measure a rotational position of the at least one portion of the optical cylinder; and a controller configured to drive the controllable device, the controller being supplied with the One of the measurement systems outputs a signal. The lithography apparatus of claim 1, wherein the measurement system comprises: a position sensor configured to provide a position sensor indicative of a rotational position of the at least one portion of the optical cylinder a reference data table configured to provide a position reference signal; and a phase locked loop structure configured to derive the output signal using the position sensor signal, This reference sheet is incorporated into the phase locked loop structure. The lithography apparatus of claim 2, wherein the phase locked loop structure comprises a ratio And comparing, the first input of the comparator is supplied with the position sensor signal, and the second input of the comparator is supplied with the position reference signal provided by the reference data table. The lithography apparatus of claim 3, wherein the phase locked loop structure comprises a voltage controlled oscillator, wherein the voltage controlled oscillator is fed by a filtered output signal of one of the comparators, and the voltage controlled oscillator oscillates The output signal is provided to the controller as the output signal. The lithography apparatus of claim 4, wherein the oscillator output signal is provided as a clock signal to the reference data table, or one of the position sensor sampling circuits, or both. The lithography apparatus of claim 4 or claim 5, wherein one of the oscillator output signals has a clock frequency of at least 10 times a periodicity of a sensor signal. The lithography apparatus of claim 6, wherein the clock frequency of the oscillator output signal is at least 50 times the periodicity of the sensor signal. The lithography apparatus of any one of claims 1 to 5, wherein the controllable device is a self-emissive contrast element. A component manufacturing method comprising: generating a pattern onto a target portion of a substrate by an optical cylinder, the generating comprising: providing a light beam using a controllable device; and projecting the light beam by a projection system To the target portion; rotating at least a portion of the optical cylinder relative to the substrate; measuring a rotational position of the at least one portion of the optical cylinder by a metrology system; and The controllable device is driven in response to an output signal of the measurement system. The method of claim 9, wherein measuring the rotational position of the at least a portion of the optical cylinder comprises: providing a position sensor signal indicative of the rotational position of the at least a portion of the optical cylinder by a position sensor Providing a position reference signal by a reference data table; and deriving the output signal from the position sensor signal by a phase locked loop structure, the reference material table being incorporated in the phase locked loop structure. The method of claim 10, wherein the phase-locked loop structure includes a comparator, the method comprising comparing the position sensor signal with the position reference signal provided by the reference data table by the comparator. The method of claim 11, wherein the phase locked loop structure comprises a voltage controlled oscillator, the method comprising inputting the voltage controlled oscillator by filtering the output signal of one of the comparators, and the voltage controlled oscillator One of the oscillator output signals synchronously drives the controllable device. The method of claim 12, wherein the oscillator output signal is provided as a clock signal to the reference data table, or one of the position sensor sampling circuits, or both. The method of claim 12 or claim 13, wherein one of the oscillator output signals has a clock frequency of at least 10 times a periodicity of a sensor signal. The method of claim 14, wherein the clock frequency of the oscillator output signal is at least 50 times the periodicity of the sensor signal. The method of any one of claims 10 to 13, wherein the method is determined by the following steps Setting an entry of the reference data sheet: recording the position sensor signal throughout a plurality of revolutions of the at least a portion of the optical cylinder; determining a periodicity from the recorded position sensor signal; The recorded position sensor signal is resampled to a resampling rate that is consistent with the periodicity; and the resampled position sensor signal is stored in the reference data table. A computer product having machine executable instructions executable by a machine to perform a method, the method comprising: generating a pattern onto a target portion of a substrate by an optical cylinder, the generating comprising: Using a controllable device to provide a light beam; and projecting the light beam onto the target portion by a projection system; rotating at least a portion of the optical cylinder relative to the substrate; measuring the optical cylinder by a metrology system One of the at least one portion of the rotational position; and responsive to a position signal of the measurement system to drive the controllable device.