TWI422834B - A probe guide member and a test method having a probe card and a semiconductor device using the same - Google Patents

A probe guide member and a test method having a probe card and a semiconductor device using the same Download PDF

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TWI422834B
TWI422834B TW99123796A TW99123796A TWI422834B TW I422834 B TWI422834 B TW I422834B TW 99123796 A TW99123796 A TW 99123796A TW 99123796 A TW99123796 A TW 99123796A TW I422834 B TWI422834 B TW I422834B
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probe
guiding member
protruding
semiconductor device
apex
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TW99123796A
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TW201124733A (en
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Eichi Osato
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Nihon Micronics Kk
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探針導引構件及具備有此之探針卡以及使用有其之半導體裝置之試驗方法Probe guiding member and test method therefor, the probe card having the same and the semiconductor device using the same

本發明,係有關於在半導體裝置之試驗中所使用的探針導引構件、及具備有此之探針卡、以及使用有其之半導體裝置之試驗方法。The present invention relates to a probe guiding member used in testing of a semiconductor device, and a test method including the probe card and the semiconductor device using the same.

在具備有被稱作突塊之突起狀的連接電極之例如BGA(球柵矩陣)等的半導體裝置之電性特性的試驗中,從先前技術起,係以使用與突起狀之連接電極垂直地作接觸之垂直型的探針為主流,但是,當連接電極之節距為小的情況、或者是當為了進行凱文連接而必須要在1個的連接電極處而使2根的探針作接觸的情況等時,由於垂直型之探針係無法作對應,因此,最近,係進行有使用懸臂型之探針。In the test of the electrical characteristics of a semiconductor device such as a BGA (ball grid matrix) having a bump-like connection electrode called a bump, the prior art is used perpendicularly to the protruding connection electrode. The vertical type probe for contact is the mainstream, but when the pitch of the connection electrodes is small, or when it is necessary to make a Kevin connection, it is necessary to make two probes at one connection electrode. In the case of contact or the like, since the vertical type probe system cannot be used for correspondence, recently, a cantilever type probe has been used.

但是,旋臂型之探針,由於係僅為單端支持地而將探針作安裝,因此,其之前端部係容易移動,特別是,當與突起狀之連接電極作了接觸的情況時,雖然亦依存於其之接觸部位,但是,係會有著探針之前端從突起狀之連接電極而滑落並成為無法取得安定之電性連接的問題。However, since the probe of the spiral arm type is attached only to the single-end support, the front end portion is easily moved, in particular, when it is in contact with the protruding connection electrode. Although it depends on the contact portion of the contact portion, there is a problem that the front end of the probe slides off from the protruding connection electrode and the electrical connection cannot be obtained stably.

為了解決此問題,例如,在專利文獻1中,係提案有:在身為檢查對象之半導體裝置與具備有探針之探針卡之間,而配置具備有成為突起狀之連接電極的平面尺寸以下並且較探針之前端部尺寸而更大之直徑的貫通孔之探針導引構件。In order to solve this problem, for example, in Patent Document 1, it is proposed to arrange a planar size including a connection electrode having a protrusion shape between a semiconductor device to be inspected and a probe card having a probe. The probe guiding member of the through hole having a diameter larger than the size of the front end of the probe is as follows.

然而,在專利文獻1中所提案之導引構件的貫通孔,由於係為對於突起狀之連接電極的略全面而作開口之圓形的貫通孔,因此,探針之前端部,係並非一定會成為經由此貫通孔而被朝向過驅動時之刮擦方向作導引,而會有在貫通孔所容許之範圍內而朝向側方向滑動的情形,故係有著難以取得安定之電性連接的缺點。However, since the through hole of the guide member proposed in Patent Document 1 is a circular through hole that is slightly open to the protruding connection electrode, the front end portion of the probe is not necessarily fixed. There is a case where the direction of the wiping direction when the through hole is driven through the through hole is controlled, and the side hole is slid in the range permitted by the through hole, so that it is difficult to obtain a stable electrical connection. Disadvantages.

又,在專利文獻1中所提案之貫通孔,由於係如同上述一般,相對於突起狀之連接電極的包含有突起頂點之略全面而作開口,因此,若是將探針前端處插入至此貫通孔內並與連接電極作接觸,則有時候會發生探針之前端部與連接電極之突起頂點相接觸並在突起頂點上造成刮擦痕跡的情形。突起狀連接電極之突起頂點,係為該電極與作安裝之安裝品之間的結合場所之部分的中心,若是在該處存在有刮擦痕跡,則該部分會在之後的熔著時而成為空洞並殘留,其結果,會成為造成接合強度不足或者是導電量不足等的原因。Further, since the through hole proposed in Patent Document 1 is generally opened as described above with respect to the protruding connection electrode including the apex of the protrusion, the tip end of the probe is inserted into the through hole. Inside and in contact with the connecting electrode, there are cases where the front end of the probe comes into contact with the apex of the connecting electrode and causes a scratch on the apex of the protrusion. The apex of the protrusion of the protruding connection electrode is the center of the portion of the joint between the electrode and the mounting member to be mounted, and if there is a scratch mark there, the portion becomes the fusion at the time of the subsequent fusion. The voids remain and remain, which may cause insufficient bonding strength or insufficient conductivity.

[先前技術文獻][Previous Technical Literature] [專利文獻][Patent Literature]

[專利文獻1] 日本特開2004-335613號公報[Patent Document 1] Japanese Patent Laid-Open Publication No. 2004-335613

本發明,係為為了解決上述之先前技術的缺點所進行者,並以提供一種能夠在懸臂型之探針與突起狀連接電極之間而進行安定之電性連接並且不會對於突起狀連接電極之突起頂點而賦予刮擦痕跡的探針導引構件、具備有該種導引構件之懸臂型探針卡、以及使用有該種導引構件之半導體裝置之試驗方法一事,作為課題。The present invention has been made to solve the above-mentioned shortcomings of the prior art, and to provide an electrical connection capable of being stabilized between a cantilever type probe and a protruding connection electrode and not for a protruding connection electrode A probe guiding member that imparts a scratch mark to the apex of the projection, a cantilever type probe card including the guide member, and a test method of a semiconductor device using the same.

本發明,係經由提供下述一般之探針導引構件、和具備有該種探針導引構件的懸臂型之探針卡、以及使用有該種探針導引構件之半導體裝置之試驗方法,而解決了上述課題,該探針導體構件,係為當對於具備有突起狀連接電極之半導體裝置而使用懸臂型之探針卡來進行試驗時所使用的探針導引構件,其特徵為:係具備有導引孔,其係具備著將在試驗時而與突起狀連接電極作接觸之探針前端部的移動朝向沿著其之滑動方向的直線方向而作導引之直線狀的側部,該導引孔,係為當上述探針導引構件相對於突起狀連接電極而被定位在使用位置處時,在與從沿著通過突起狀連接電極之突起頂點的滑動方向之中心線而偏移了的頂點週邊部相對向的位置處作開口之導引孔。The present invention provides a general probe guiding member, a cantilever type probe card provided with the probe guiding member, and a test method using the semiconductor device using the probe guiding member. In order to solve the above problems, the probe conductor member is a probe guiding member used when testing a cantilever type probe card for a semiconductor device including a protruding connection electrode. The guide hole is provided with a linear side that guides the movement of the distal end portion of the probe that is in contact with the protruding connection electrode during the test toward the linear direction along the sliding direction thereof. The guiding hole is a center line of the sliding direction from the apex of the protrusion along the protruding electrode by the protrusion when the probe guiding member is positioned at the use position with respect to the protruding connecting electrode. The deflected apex peripheral portion is oppositely located as an opening guide hole.

若依據本發明之探針導體構件,則探針之前端部,由於係經由導引孔之直線狀的側部而使得其之移動被朝向刮擦方向作導引,因此,係不會有滑落至突起狀連接電極之側方的情況,而能夠在探針與連接電極之間恆常地實現安定之電性連接。又,若依據本發明之探針導引構件,則當相對於突起狀連接電極而對於使用位置作定位時,導引孔,由於係在與從沿著通過突起狀連接電極之突起頂點的刮擦方向之中心線而偏離了的頂點週邊部相對向之位置處而作開口,因此,探針前端部與連接電極之突起頂點作接觸一事係被防止,而不會有在突起頂點處造成刮擦痕跡的情形。According to the probe conductor member of the present invention, since the front end portion of the probe is guided by the linear side portion of the guide hole so as to be guided toward the wiping direction, there is no slippage. In the case of the side of the protruding connection electrode, it is possible to constantly achieve stable electrical connection between the probe and the connection electrode. Further, according to the probe guiding member of the present invention, when the position is used for positioning with respect to the protruding connecting electrode, the guiding hole is scraped due to the apex of the projection from the projection electrode. The center line of the rubbing direction is offset from the position of the peripheral portion of the vertex which is deviated from the center of the apex, so that the front end portion of the probe is prevented from coming into contact with the apex of the connecting electrode, and the scraping is not caused at the apex of the protrusion. The situation of rubbing the traces.

本發明之探針導引構件,在其中一種理想實施形態中,導引孔,係在沿著通過突起狀連接電極之突起頂點的滑動方向之中心線的兩側處,而被分別作設置。如此這般,當在突起狀連接電極之中心線的兩側處而分別設置有導引孔的情況時,能夠將本發明之探針導引構件合適地使用在使2根的探針與1個的連接電極作接觸之試驗、例如藉由凱文接觸所進行之試驗中。In the probe guiding member of the present invention, in one preferred embodiment, the guide holes are respectively provided at both sides of the center line along the sliding direction of the apex of the projections passing through the projecting connecting electrodes. In this manner, when the guide holes are respectively provided at both sides of the center line of the projecting connecting electrodes, the probe guiding member of the present invention can be suitably used in the case of making the probes of 2 The connecting electrodes are tested for contact, for example, by Kevin contact.

進而,本發明之探針導引構件,在其中一種理想實施形態中,被分別設置在上述中心線之兩側處的導引孔,係以使其之上述直線狀的側部之彼此間的間隔隨著試驗時之探針前端部的朝向滑動方向之先端的移動而逐漸變窄的方式,而被設置為八字狀。藉由此,相較於將導引孔的上述直線狀之側部相互平行地作設置的情況,能夠使2根的探針與突起狀連接電極之間的電性連接成為更加安定者。Further, in the probe guiding member of the present invention, in one preferred embodiment, the guide holes respectively provided at both sides of the center line are such that the linear side portions thereof are located between each other The interval is gradually increased as the tip end portion of the probe is gradually narrowed toward the sliding direction of the sliding direction, and is provided in a figure-eight shape. Thereby, the electrical connection between the two probes and the protruding connection electrodes can be made more stable than when the linear side portions of the guide holes are arranged in parallel with each other.

另外,本發明之作為對象的半導體裝置,係並不被限定於上述之BGA,而亦可為例如CSP(晶片尺寸封裝)、WLCSP(晶圓尺度CSP)、覆晶晶片等,只要是具備有突起狀之連接電極的半導體裝置,則不論是何種半導體裝置均可。Further, the semiconductor device to which the present invention is applied is not limited to the above-described BGA, and may be, for example, a CSP (Chip Size Package), a WLCSP (Wafer Scale CSP), a flip chip, or the like, as long as it is provided. The semiconductor device in which the protruding connection electrodes are used may be any semiconductor device.

若依據本發明,則係能夠在懸臂型之探針與突起狀連接電極之間而實現安定的電性連接。又,若依據本發明,則由於係並不會在身為檢查對象之半導體裝置的突起狀連接電極之突起頂點處造成刮擦痕跡,因此,係不會有對於身為檢查對象之半導體裝置,而造成像是在其之與安裝品之間的接合中而會成為問題的接合強度不足或者是導電量不足等等的問題之情況。According to the present invention, a stable electrical connection can be achieved between the cantilever type probe and the protruding connection electrode. Moreover, according to the present invention, since scratches are not caused at the apex of the protrusion of the protruding connection electrode of the semiconductor device to be inspected, there is no possibility for the semiconductor device to be inspected. This causes a problem that the joint strength is insufficient or the amount of electric conductivity is insufficient, such as in the joint between the mount and the mount.

以下,使用圖面來對於本發明作詳細說明,但是,當然的,本發明係不被該些圖示者所限定。Hereinafter, the present invention will be described in detail using the drawings, but the invention is of course not limited by the figures.

圖1,係為對於本發明之懸臂型探針卡的其中一例作展示之剖面圖。於圖中,1係為探針卡,2係為配線基板,3係為補強構件,4係為殼體,5係為頂蓋,6係為導引區塊,7係為探針推壓構件,8係為探針,9係為試驗品插入部,10係為定位用之導引銷。11係為本發明之探針導引構件,12係為探針導引構件11之配向調整螺絲。經由定位用之導引銷10,殼體4、探針導引構件11以及導引區塊6,係相互被定位在特定之位置處。Fig. 1 is a cross-sectional view showing an example of a cantilever type probe card of the present invention. In the figure, 1 is a probe card, 2 is a wiring board, 3 is a reinforcing member, 4 is a housing, 5 is a top cover, 6 is a guiding block, and 7 is a probe pushing For the members, 8 is a probe, 9 is a test piece insertion portion, and 10 is a guide pin for positioning. 11 is the probe guiding member of the present invention, and 12 is the alignment adjusting screw of the probe guiding member 11. The housing 4, the probe guiding member 11, and the guiding block 6 are positioned at a specific position with each other via the guiding pin 10 for positioning.

圖2,係為將圖1之重要部分作一部份擴大展示,並且將身為試驗對象之半導體裝置的一部份一併作展示之圖。如圖2中所示一般,在探針導引構件11處,係被設置有導引孔13。14係為身為試驗對象之半導體裝置,15係為其之突起狀連接電極。16,係為探針導引構件11與突起狀連接電極15之間的對位構件。如圖中所示一般,在本例之探針卡1中,對於各突起狀連接電極15,係各對應有2個的探針8以及導引孔13。如此這般,對於1個的突起狀連接電極15而使2個的導引孔13作了對應之探針導引構件11,例如,係適合於使用在凱文連接式之探針卡中,但是,當然的,係並不僅被限定於凱文連接中,在使2根的探針與1個的突起狀連接電極作接觸並進行通常之試驗的情況中,係亦可作使用。又,圖中,與最接近於導引區塊6之突起狀連接電極15相對應的探針8、和與位置在其之左側處的突起狀連接電極15相對應的探針8,由於兩者間之朝向係偏差有90度,因此,與最接近於導引區塊6之突起狀連接電極15相對應的導引孔13、和與位置在其之左側處的突起狀連接電極15相對應的導引孔13,其朝向亦係偏差有90度,在圖中,係僅對於2個的導引孔13中之其中1個作展示。FIG. 2 is an enlarged view of an important part of FIG. 1 and shows a part of the semiconductor device as a test object. As shown in Fig. 2, generally, at the probe guiding member 11, a guiding hole 13 is provided. 14 is a semiconductor device which is a test object, and 15 is a protruding connecting electrode thereof. 16 is an alignment member between the probe guiding member 11 and the protruding connecting electrode 15. As shown in the figure, in the probe card 1 of the present embodiment, two probes 8 and guide holes 13 are provided for each of the protruding connection electrodes 15. In this manner, the probe guiding members 11 corresponding to the two guiding holes 13 for one protruding connecting electrode 15 are, for example, suitable for use in a Kevin-connected probe card. However, of course, it is not limited to the Kevin connection, and it is also possible to use two probes in contact with one of the protruding connection electrodes and perform a normal test. Further, in the drawing, the probe 8 corresponding to the projecting connection electrode 15 closest to the guide block 6 and the probe 8 corresponding to the projecting connection electrode 15 positioned at the left side thereof are The orientation deviation between the two is 90 degrees, and therefore, the guide hole 13 corresponding to the projecting connection electrode 15 closest to the guide block 6 and the projecting connection electrode 15 located at the left side thereof are The corresponding guiding holes 13 are also oriented with a deviation of 90 degrees. In the figure, only one of the two guiding holes 13 is shown.

在半導體裝置14之上方,係存在有未圖示之推壓構件與可動平台,在試驗時,經由此推壓構件與可動平台,半導體裝置14,係在將其之突起狀連接電極15之位置對於探針8以及探針導引構件11之導引孔13而作了定位的狀態下,被朝向探針卡1而作推壓。當然,亦可讓探針卡1朝向半導體裝置14而移動。Above the semiconductor device 14, there are a pressing member and a movable stage (not shown). At the time of the test, the pressing member and the movable stage, and the semiconductor device 14 are connected to the protruding electrode 15 by the protrusion. In the state in which the probe 8 and the guide hole 13 of the probe guiding member 11 are positioned, they are pressed toward the probe card 1. Of course, the probe card 1 can also be moved toward the semiconductor device 14.

不論如何,在試驗時,探針導引構件11,係為相對於半導體裝置14之突起狀連接電極15以及探針8而被作了定位的狀態,在該被作了定位的狀態下,探針導引構件11之導引孔13,係在與從通過各對應之突起狀連接電極15的突起頂點之刮擦方向的中心線而作了偏離的頂點週邊部相對向的位置處作開口。又,探針8之前端部,係分別位在將相對應之貫通孔13作貫通的位置處。In any case, during the test, the probe guiding member 11 is in a state of being positioned with respect to the protruding connecting electrode 15 of the semiconductor device 14 and the probe 8, and in the state in which the positioning is performed, The guide hole 13 of the needle guiding member 11 is opened at a position opposed to the peripheral portion of the apex which is deviated from the center line passing through the wiping direction of the apex of the projection of the corresponding protruding connecting electrode 15. Further, the front end portions of the probes 8 are respectively located at positions where the corresponding through holes 13 are penetrated.

在圖2中,探針8之前端部,雖然係成為已將各相對應之導引孔13作了貫通的狀態,但是,探針8,係可在此狀態下而被對於半導體裝置14之突起狀連接電極相對性地作推壓並與突起狀連接電極15作接觸,亦可於起初而位置在導引孔13之外,並當半導體裝置14被對於探針卡1相對性地作推壓時,而貫通各相對應之導引孔13,並與突起狀連接電極15作接觸。In FIG. 2, the front end portion of the probe 8 is in a state in which the corresponding guide holes 13 have been penetrated, but the probe 8 can be used in this state for the semiconductor device 14. The protruding connecting electrode is relatively pressed and brought into contact with the protruding connecting electrode 15, and may be positioned outside the guiding hole 13 at the beginning, and when the semiconductor device 14 is relatively pushed against the probe card 1 When pressed, the corresponding guide holes 13 are passed through and brought into contact with the projecting connecting electrodes 15.

探針導引構件11,例如,係可藉由聚醯亞胺等之絕緣性的樹脂薄膜來作成,其之厚度,雖然亦依存於突起狀連接電極15之大小,但是,通常,係可為30~50μm左右。The probe guiding member 11 can be formed, for example, by an insulating resin film such as polyimide or the like, and the thickness thereof depends on the size of the protruding connecting electrode 15, but usually, it can be 30~50μm or so.

圖3,係為對於探針導引構件11之其中一例作展示之平面圖。如圖中所示一般,在探針導引構件11處,係於與半導體裝置之突起狀連接電極相對應的位置處,而被設置有各2個的導引孔13。Fig. 3 is a plan view showing an example of the probe guiding member 11. As shown in the drawing, generally, at the probe guiding member 11, at a position corresponding to the protruding connecting electrode of the semiconductor device, two guiding holes 13 are provided.

圖4,係為對於突起狀連接電極15和與其相對應之 導引孔13、13以及探針8、8之間的位置關係作展示之圖。於圖中,箭頭,係代表當探針8、8被施加有過驅動時而一面與突起狀連接電極15作接觸一面滑動的方向,亦即是,係代表刮擦方向。如圖中所示一般,導引孔13、13,係具備有於刮擦方向上而較長的長孔形狀,導引孔13、13之刮擦方向的長度,係較探針8、8之前端部的想定滑動量更長,與刮擦方向相正交之橫方向的寬幅,係以能夠使探針8之前端部貫通導引孔13、13的方式,而被形成為較探針8、8之前端部附近的直徑更長。Figure 4 is for the protruding connection electrode 15 and corresponding thereto The positional relationship between the guide holes 13, 13 and the probes 8, 8 is shown. In the figure, the arrow indicates the direction in which the probes 8, 8 are slid while being in contact with the projecting connecting electrode 15 when overdriving, that is, the direction of the scraping. As shown in the figure, generally, the guide holes 13, 13 are provided with a long hole shape which is long in the wiping direction, and the length of the guide holes 13, 13 in the wiping direction is compared with the probes 8, 8 The desired amount of sliding of the front end portion is longer, and the width in the lateral direction orthogonal to the wiping direction is formed so that the front end portion of the probe 8 can pass through the guide holes 13 and 13 The diameters near the ends of the needles 8, 8 are longer.

17,係為突起狀連接電極15之突起頂點,C,係為沿著通過突起頂點17之刮擦方向的中心線。如圖4中所示一般,導引孔13、13,係並未在此中心線C上作開口,而是在挾持中心線C的兩側處,在與從中心線C而偏離了的突起頂點17之週邊部相對向的位置處作開口。故而,被插通於導引孔13、13內之探針8、8的前端部,係並不會有與突起頂點17相接觸的情況,而不會在突起頂點17處造成刮擦痕跡。17, is the protrusion apex of the protruding connection electrode 15, and C is a center line along the scratch direction passing through the apex of the protrusion 17. As shown in Fig. 4, generally, the guide holes 13, 13 are not open on the center line C, but are located on both sides of the center line C, and are offset from the center line C. An opening is formed at a position where the peripheral portion of the apex 17 is opposed to each other. Therefore, the distal end portions of the probes 8, 8 inserted into the guide holes 13, 13 do not come into contact with the apex 17 of the protrusion, and do not cause scratches at the apex 17 of the protrusion.

18,係為導引孔13之直線狀的側部。側部18,由於係與刮擦方向相平行,因此,探針8之前端部,係經由此側部18而使其之移動被導引至沿著刮擦方向之直線方向上。藉由此,探針8之前端部,係不會有從突起狀連接電極15而滑落的情況,而兩者間之安定的電性連接係被實現。另外,在圖4中,雖係於導引孔13之左右兩側處而被設置有直線狀之側部18,但是,探針8之前端部,由於通常係沿著突起狀連接電極15之表面的傾斜,而朝向從中心線C而遠離之外側方向作滑動,因此,直線狀之側部18,係亦可僅設置在從導引孔13之中心線C而遠離之單側處。18 is a linear side portion of the guide hole 13. Since the side portion 18 is parallel to the wiping direction, the front end portion of the probe 8 is guided to the linear direction along the wiping direction by the movement of the side portion 18. Thereby, the front end portion of the probe 8 does not slip from the protruding connection electrode 15, and the stable electrical connection between the two is realized. Further, in FIG. 4, although the linear side portions 18 are provided at the left and right sides of the guide hole 13, the front end portion of the probe 8 is usually connected to the electrode 15 along the protruding shape. Since the surface is inclined and slides away from the center line C and away from the outer side, the linear side portion 18 may be provided only at one side away from the center line C of the guide hole 13.

圖5,係為對於探針導引構件11之另外一例作展示之圖。在此圖之探針導引構件11中,係與圖4之例相同的,與1個的突起狀連接電極15相對應地而分別在中心線之兩側處被設置有2個的導引孔13、13,但是,該些之2個的導引孔13、13,係以使其之直線狀之側部18、18彼此間的間隔隨著朝向以箭頭所示之刮擦方向的前端前進而逐漸地變窄的方式,而被設置為八字型。當使探針8之前端部的移動經由此種導引孔13的直線狀之側部18而被作導引的情況時,當探針8之前端部與突起狀連接電極15之表面作接觸並滑動時,由於係被朝向爬上突起狀連接電極15之傾斜表面的方向而被作導引,因此,探針8之前端部與突起狀連接電極15之間的接觸壓係變高,而能夠實現更加安定之電性連接。FIG. 5 is a view showing another example of the probe guiding member 11. In the probe guiding member 11 of this drawing, as in the example of FIG. 4, two guides are provided on both sides of the center line corresponding to one protruding connecting electrode 15 respectively. The holes 13, 13 are, however, the two guide holes 13, 13 are such that the distance between the side portions 18, 18 of the linear shape thereof is toward the front end in the wiping direction indicated by the arrow. It is gradually narrowed and is set to a splayed shape. When the movement of the front end portion of the probe 8 is guided via the linear side portion 18 of the guide hole 13, the front end portion of the probe 8 is in contact with the surface of the projecting connection electrode 15 When sliding, since the guide is guided toward the direction in which the inclined surface of the protruding connecting electrode 15 is climbed, the contact pressure between the front end portion of the probe 8 and the protruding connecting electrode 15 becomes high, and Achieve a more stable electrical connection.

圖6,係為對於探針導引構件11之又一其他例作展示之圖,並為當對於1個的突起狀連接電極而使1根的探針作接觸而進行試驗時所使用的探針導引構件。如圖中所示一般,導引孔13,係與1個的突起狀連接電極15相對應地,而在與從其之中心線C而偏移了的頂點週邊部相對向之位置處僅被設置有1個。另外,在本例之探針導引構件11中,當然的,導引孔13,係同樣的具備有將探針8之前端部的移動朝向沿著其之刮擦方向的直線方向而作導引之直線狀的側部18。Fig. 6 is a view showing still another example of the probe guiding member 11, and is used for testing when one probe is brought into contact with one protruding connecting electrode. Needle guiding member. As shown in the drawing, the guide hole 13 is corresponding to one of the projecting connecting electrodes 15 and is located only at a position opposite to the peripheral portion of the apex which is offset from the center line C thereof. There is one setting. Further, in the probe guiding member 11 of the present example, of course, the guiding hole 13 is similarly provided with a linear direction in which the front end portion of the probe 8 is moved toward the wiping direction along the wiping direction thereof. The linear side portion 18 is drawn.

當使用上述一般之探針導引構件11而進行半導體裝置之電性特性的試驗時,係使探針導引構件11中介存在於探針8與身為試驗對象之半導體裝置之間,並使探針8之前端部貫通探針導引構件11之導引孔13而與突起狀連接電極15作接觸,除此之外,只要與通常之試驗方法同樣地來進行即可。若依據本發明之試驗方法,則係一面將懸臂型探針之前端部使其之移動朝向刮擦方向來直線性地作導引,一面使該探針與突起狀連接電極之從沿著通過突起頂點之刮擦方向的中心線而偏離了的頂點週邊部作接觸,而進行具備有突起狀連接電極之半導體裝置之電性試驗。另外,探針導引構件11,係可被組入至探針卡1中,亦可與探針卡1分開地而被安裝在試驗裝置上。When the electrical characteristics of the semiconductor device are tested using the above-described general probe guiding member 11, the probe guiding member 11 is interposed between the probe 8 and the semiconductor device under test, and The front end of the probe 8 may be inserted into the guide hole 13 of the probe guiding member 11 to be in contact with the protruding connecting electrode 15, and may be carried out in the same manner as in the usual test method. According to the test method of the present invention, the front end of the cantilever type probe is linearly guided while moving toward the wiping direction, and the probe and the protruding connecting electrode are passed along. The center line of the rubbing direction of the apex of the protrusion was brought into contact with the peripheral portion of the apex which deviated from the apex of the protrusion, and an electrical test of the semiconductor device having the protruding connection electrode was performed. Further, the probe guiding member 11 may be incorporated into the probe card 1 or may be mounted on the testing device separately from the probe card 1.

[產業上之利用可能性][Industry use possibility]

若依據本發明之探針導引構件及具備有其之探針卡以及本發明之試驗方法,則由於係能夠將具備有突起狀連接電極之半導體裝置的電性特性試驗更加安定且確實地來進行,因此,對於半導體裝置之信賴性的提升,係有著極大的幫助,不僅是在製造半導體裝置之產業中,就算是在對於半導體裝置作利用之其他的產業領域中,亦具備有極大的可利用性。According to the probe guiding member of the present invention, the probe card provided therewith, and the test method of the present invention, it is possible to more reliably and reliably test the electrical characteristics of the semiconductor device including the protruding connecting electrode. Therefore, it is of great help to improve the reliability of semiconductor devices, not only in the manufacturing of semiconductor devices, but also in other industrial fields where semiconductor devices are used. Utilization.

1...探針卡1. . . Probe card

2...配線基板2. . . Wiring substrate

3...補強構件3. . . Reinforcement member

4...殼體4. . . case

5...頂蓋5. . . Top cover

6...導引區塊6. . . Boot block

7...探針推壓構件7. . . Probe pushing member

8...探針8. . . Probe

9...試驗品插入部9. . . Test article insertion

10...定位用導引銷10. . . Positioning guide pin

11...探針導引構件11. . . Probe guiding member

12...配向調整螺絲12. . . Alignment adjustment screw

13...導引構件13. . . Guide member

14...半導體裝置14. . . Semiconductor device

15...突起狀連接電極15. . . Projected connecting electrode

16...對位構件16. . . Alignment component

17...突起頂點17. . . Prominent apex

18...直線狀之側部18. . . Straight side

C...中心線C. . . Center line

[圖1]對於本發明之懸臂型探針卡的其中一例作展示之剖面圖。Fig. 1 is a cross-sectional view showing an example of a cantilever type probe card of the present invention.

[圖2]將圖1之重要部分作一部份擴大展示之圖。[Fig. 2] A diagram showing an enlarged part of the important part of Fig. 1.

[圖3]對於探針導引構件之其中一例作展示之平面圖。Fig. 3 is a plan view showing an example of a probe guiding member.

[圖4]對於突起狀連接電極、導引孔以及探針之間的位置關係作展示之圖。[Fig. 4] A view showing a positional relationship between the projecting connecting electrode, the guiding hole, and the probe.

[圖5]對於探針導引構件之另外一例作展示之圖。Fig. 5 is a view showing another example of the probe guiding member.

[圖6]對於探針導引構件之又另外一例作展示之平面圖。Fig. 6 is a plan view showing still another example of the probe guiding member.

1...探針卡1. . . Probe card

2...配線基板2. . . Wiring substrate

3...補強構件3. . . Reinforcement member

4...殼體4. . . case

5...頂蓋5. . . Top cover

6...導引區塊6. . . Boot block

7...探針推壓構件7. . . Probe pushing member

8...探針8. . . Probe

9...試驗品插入部9. . . Test article insertion

10...定位用導引銷10. . . Positioning guide pin

11...探針導引構件11. . . Probe guiding member

12...配向調整螺絲12. . . Alignment adjustment screw

Claims (6)

一種探針導引構件,係為當對於具備有突起狀連接電極之半導體裝置而使用懸臂型之探針卡來進行試驗時所使用的探針導引構件,其特徵為:係具備有導引孔,該導引孔係具備有在試驗時將與突起狀連接電極作接觸之探針前端部的移動朝向沿著其之刮擦(scrub)方向的直線方向而作導引之直線狀的側部,該導引孔,係為當上述探針導引構件相對於突起狀連接電極而被定位在使用位置處時,在與從沿著通過突起狀連接電極之突起頂點的刮擦方向之中心線而偏移了的頂點週邊部相對向的位置處作開口之導引孔。A probe guiding member is a probe guiding member used when testing a cantilever type probe card for a semiconductor device having a protruding connecting electrode, and is characterized in that it has a guide a hole having a linear side guided by a movement of a distal end portion of the probe that is in contact with the protruding connecting electrode toward a linear direction along a scrap direction thereof during the test. The guide hole is located at the center of the wiping direction from the apex of the protrusion along the protruding electrode by the protrusion when the probe guiding member is positioned at the use position with respect to the protruding connecting electrode A guide hole for opening is provided at a position where the peripheral portion of the apex which is offset from the line is opposed. 如申請專利範圍第1項所記載之探針導引構件,其中,上述導引孔,係在沿著通過突起狀連接電極之突起頂點的刮擦方向之中心線的兩側處,而被分別作設置。The probe guiding member according to claim 1, wherein the guiding holes are respectively located at both sides of a center line along a wiping direction of a projection apex passing through the protruding connecting electrodes. Make settings. 如申請專利範圍第2項所記載之探針導引構件,其中,被分別設置在上述中心線之兩側處的導引孔,係以使其之上述直線狀的側部之彼此間的間隔隨著試驗時之探針前端部的朝向刮擦方向之先端的移動而逐漸變窄的方式,而被設置為八字狀。The probe guiding member according to the second aspect of the invention, wherein the guide holes respectively provided at both sides of the center line are spaced apart from each other by the linear side portions. It was set to a figure-eight shape as the tip end portion of the probe was gradually narrowed toward the tip end of the wiping direction during the test. 一種懸臂型探針卡,其特徵為:係具備有如申請專利範圍第1~3項中之任一項所記載之探針導引構件。A cantilever type probe card comprising the probe guiding member according to any one of claims 1 to 3. 如申請專利範圍第4項所記載之懸臂型探針卡,其中,係為對於1個的突起狀連接電極而使2根的探針作接觸之凱文連接式的探針卡。The cantilever type probe card according to the fourth aspect of the invention is a Kevin-connected probe card in which two probes are brought into contact with one protruding connection electrode. 一種具備有突起狀連接電極之半導體裝置之試驗方法,其特徵為:係使用如同申請專利範圍第1~3項中之任一項所記載之探針導引構件,而一面將懸臂型探針之前端部使其之移動朝向刮擦方向來直線性地作導引,一面使該探針與突起狀連接電極之從沿著通過突起頂點之刮擦方向的中心線而偏離了的頂點週邊部作接觸,而進行半導體裝置之電性試驗。A test method for a semiconductor device having a projecting connecting electrode, which is characterized in that a probe guiding member as described in any one of claims 1 to 3 is used, and a cantilever type probe is used on one side. The front end portion is linearly guided toward the wiping direction, and the probe and the protruding connecting electrode are offset from the center line of the vertex which is deviated from the center line passing through the rubbing direction of the apex of the protrusion. The electrical test of the semiconductor device is performed by making contact.
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