TWI420614B - A die detection method for 3d die stacking - Google Patents

A die detection method for 3d die stacking Download PDF

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TWI420614B
TWI420614B TW100116247A TW100116247A TWI420614B TW I420614 B TWI420614 B TW I420614B TW 100116247 A TW100116247 A TW 100116247A TW 100116247 A TW100116247 A TW 100116247A TW I420614 B TWI420614 B TW I420614B
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die
module
angle
line
detection
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TW201246418A (en
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Po Cheng Hsueh
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Po Cheng Hsueh
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立體佈局晶粒之檢測方法Three-dimensional layout die detection method

本發明是有關於一種晶粒檢測方法,特別是指一種應用於一立體佈局晶粒之檢測方法。The present invention relates to a method for detecting a crystal grain, and more particularly to a method for detecting a grain applied to a three-dimensional layout.

隨著半導體封裝製程的演進,系統級立體封裝技術(System on 3D package,So3D)已普遍被應用於如行動電話等行動式電子裝置的晶粒封裝流程上。With the evolution of semiconductor packaging processes, System on 3D package (So3D) has been widely used in die packaging processes for mobile electronic devices such as mobile phones.

舉例來說,參閱圖1,一以平面方式佈局之晶粒1具有六個電路元件A~F,當電連接不同電路元件時可能會產生較長的連接路徑(如圖1中電路元件D上的P1點電連接至電路元件C上的P2點之連接路徑),而參閱圖2,當該晶粒1改以立體方式佈局成一第一待檢測層11與一第二待檢測層12時,其中,該第一待檢測層11具有電路元件A、B、D、E,且該第二待檢測層12具有電路元件C、F,電路元件D上的P1點電連接至電路元件C上的P2點之連接路徑就可以有效縮短,因此,目前最常見的系統級立體封裝技術,就是在單一晶粒尺寸封裝(Chip size package,CSP)上運用一晶粒堆疊(Die stacking)技術,以有效提供一以晶粒尺寸為首要考量的相關晶粒封裝技術上,例如:行動式電子產品(如:行動電話、數位攝影機、或是數位相機等消費性點子產品)的相關晶粒封裝檢測。For example, referring to FIG. 1, a die 1 laid out in a planar manner has six circuit elements A~F, which may generate a long connection path when electrically connecting different circuit components (such as circuit component D in FIG. 1). The P1 point is electrically connected to the connection path of the P2 point on the circuit component C), and referring to FIG. 2, when the die 1 is stereoscopically arranged into a first to-be-detected layer 11 and a second to-be-detected layer 12, Wherein, the first to-be-detected layer 11 has circuit elements A, B, D, E, and the second to-be-detected layer 12 has circuit elements C, F, and the P1 point on the circuit element D is electrically connected to the circuit element C. The connection path of the P2 point can be effectively shortened. Therefore, the most common system-level three-dimensional packaging technology is to use a die stacking technology on a single chip size package (CSP) to effectively Provides a related die-level packaging technology that considers the die size as the primary consideration, such as the relevant die package inspection of mobile electronic products (such as mobile phones, digital cameras, or consumer products such as digital cameras).

然而,該先前技術卻存在著一個相當嚴重的缺點,參閱圖3,假設一設置於一基板1上之立體佈局晶粒2具有四個待檢測層C1~C4,且每一待檢測層C1~C4的面積皆不相同,其中該等待檢測層C1~C4分別具有一與該基板1連接之接點w1~w4。However, this prior art has a rather serious disadvantage. Referring to FIG. 3, it is assumed that a three-dimensional layout die 2 disposed on a substrate 1 has four layers C1 to C4 to be detected, and each layer to be inspected C1~ The areas of C4 are different, and the waiting detection layers C1 to C4 respectively have a contact w1~w4 connected to the substrate 1.

當該立體佈局之晶粒2進行該等接點w1~w4之檢測時,一晶粒檢測模組9必須在二直線L1、L2上分別移動至不同的位置點S1~S4以檢測每一待檢測層C1~C4上與該基板1之接點w1~w4是否有效連接,由於每一接點w1~w4位置相對於該晶粒檢測模組9之距離d1~d4皆不盡相同,因此,該晶粒檢測模組9每移動到一位置點w1~w4時,必須針對不同的距離d1~d4進行對焦,以有效檢測對應之接點w1~w4,如:當該晶粒檢測模組9檢測完接點w1後,欲進行接點w2之檢測時,該晶粒檢測模組9需由位置點S1移動至位置點S2,同時由於待接點w2與該晶粒檢測模組9之距離d2大於該接點w1與該晶粒檢測模組9之距離d1,因此,該晶粒檢測模組9在檢測該接點w2之前,必須重新對焦以有效取得該接點w2的清晰影像,才可得到正確的檢測結果,以現今產業界中應用晶粒堆疊(Die stacking)技術之晶粒的待檢測層之數量,幾乎都是介於8~32層,未來隨著技術之演進甚至不排除會增加至64層以上,因此,在先前技術中,每檢測一待檢測層時,該晶粒檢測模組9都需要重新對焦以取得清晰之檢測影像,無疑地一定會大幅增加該立體佈局之晶粒2的檢測時間,而檢測成本亦會隨著大幅增加。When the die 2 of the three-dimensional layout performs the detection of the contacts w1 to w4, a die detecting module 9 must move to the different position points S1 to S4 on the two straight lines L1 and L2 to detect each waiting. Whether the contacts w1~w4 of the detecting layer C1~C4 and the substrate 1 are effectively connected, since the positions of the contacts w1~w4 are different from the distance d1~d4 of the die detecting module 9, therefore, When the die detecting module 9 moves to a position point w1~w4, it must focus on different distances d1~d4 to effectively detect the corresponding contacts w1~w4, for example, when the die detecting module 9 After detecting the contact w1, when the contact w2 is to be detected, the die detecting module 9 needs to be moved from the position point S1 to the position point S2, and at the same time, the distance between the to-be-connected point w2 and the die detecting module 9 The d2 is greater than the distance d1 between the contact w1 and the die detecting module 9. Therefore, the die detecting module 9 must refocus to obtain a clear image of the contact w2 before detecting the contact w2. The correct test results can be obtained, and the number of layers to be detected by the die stacking technology in the industry today is It is between 8 and 32 layers. In the future, as the technology evolves, it does not even rule out that it will increase to more than 64 layers. Therefore, in the prior art, the die detection module 9 needs to be renewed every time a layer to be detected is detected. Focusing to obtain a clear detection image will undoubtedly increase the detection time of the crystal 2 of the three-dimensional layout, and the detection cost will also increase significantly.

所以,如何有效降低立體佈局之晶粒的檢測時間與檢測成本,是系統級立體封裝技術So3D是否可以成為新的晶粒封裝檢測主流技術的關鍵因素之一。Therefore, how to effectively reduce the detection time and detection cost of the three-dimensional layout of the die is one of the key factors for the system-level three-dimensional packaging technology So3D can become a new mainstream technology for chip package inspection.

因此,本發明之目的,即在提供一種立體佈局晶粒之檢測方法,適用於組配一控制模組控制一晶粒檢測模組,以檢測一配置於該基板上且具有多數個待檢測層之立體佈局晶粒之多數個接點,其包含以下步驟:組配該控制模組,以偵測一通過該等接點之第一假想直線;組配該控制模組,以得到一第一角度,且該第一角度為該第一假想直線與一該等待檢測層之法線相交之一銳角之餘角;組配該控制模組,以控制該晶粒檢測模組轉動該第一角度,使該晶粒檢測模組與該第一假想直線垂直;及組配該控制模組,以控制該晶粒檢測模組於一第二直線上移動至每一檢測點,以檢測每一檢測點所對應之接點。Therefore, the object of the present invention is to provide a method for detecting a three-dimensional layout die, which is suitable for assembling a control module to control a die detection module to detect a plurality of layers to be detected disposed on the substrate. a plurality of contacts of the three-dimensional layout die, comprising the steps of: assembling the control module to detect a first imaginary line passing through the contacts; assembling the control module to obtain a first An angle, wherein the first angle is an angle of an acute angle of the first imaginary line intersecting a normal line of the waiting detection layer; the control module is assembled to control the die detection module to rotate the first angle Having the die detection module perpendicular to the first imaginary line; and assembling the control module to control the die detection module to move to a detection point on a second line to detect each detection The point corresponding to the point.

本發明之另一目的,即在提供一種立體佈局晶粒之檢測方法,適用於組配一控制模組控制一晶粒檢測模組與一基板,以檢測一配置於該基板上且具有多數個待檢測層之立體佈局晶粒之多數個接點,其包含以下步驟:組配該控制模組,以偵測一通過該等接點之第一假想直線;組配該控制模組,以得到一第二角度,且該第二角度為該第一假想直線與一該等待檢測層之法線相交之一銳角之餘角;組配該控制模組,以控制該基板轉動該第二角度,使該晶粒檢測模組與該第一假想直線垂直;及組配該控制模組,以控制該晶粒檢測模組於一第二直線上移動至每一檢測點,以檢測每一檢測點所對應之接點。Another object of the present invention is to provide a method for detecting a three-dimensional layout die, which is suitable for assembling a control module to control a die detection module and a substrate to detect a configuration on the substrate and having a plurality of a plurality of contacts of the three-dimensional layout die of the layer to be detected, comprising the steps of: assembling the control module to detect a first imaginary line passing through the contacts; assembling the control module to obtain a second angle, wherein the second angle is an angle of an acute angle of the first imaginary line intersecting a normal line of the waiting detection layer; the control module is assembled to control the substrate to rotate the second angle, The die detection module is perpendicular to the first imaginary line; and the control module is assembled to control the die detection module to move to a detection point on a second line to detect each detection point The corresponding contact.

本發明之另一目的,即在提供一種立體佈局晶粒之檢測方法,適用於組配一控制模組控制一晶粒檢測模組及一基板,以檢測一配置於該基板上且具有多數個待檢測層之立體佈局晶粒與一導線電連接之導通點,且每一導通點分別電連接於一導線且該導線與該基板電連接,其包含以下步驟:組配該控制模組,以設定一平行於該導線之第三直線;組配該控制模組,以得到一第二角度,且該第二角度為第三假想直線與該等待檢測層之法線相交之一銳角之餘角;組配該控制模組,以控制該基板轉動該第二角度,使該晶粒檢測模組與該第一假想直線垂直;及組配該控制模組以控制一晶粒檢測模組於一第二直線上移動至每一檢測點,以檢測每一檢測點所對應之接點。Another object of the present invention is to provide a method for detecting a three-dimensional layout die, which is suitable for assembling a control module to control a die detection module and a substrate to detect a plurality of substrates disposed on the substrate. a three-dimensional layout die of the layer to be inspected is electrically connected to a conductive line of the wire, and each of the conductive points is electrically connected to a wire and the wire is electrically connected to the substrate, and the method comprises the steps of: assembling the control module to Setting a third line parallel to the wire; assembling the control module to obtain a second angle, and the second angle is a complementary angle of the acute angle between the third imaginary line and the normal line of the waiting detection layer The control module is configured to control the substrate to rotate the second angle to make the die detection module perpendicular to the first imaginary line; and the control module is configured to control a die detection module The second line moves up to each detection point to detect the contact point corresponding to each detection point.

本發明之另一目的,即在提供一種9. 一種立體佈局晶粒之檢測方法,適用於組配一控制模組控制一晶粒檢測模組,以檢測一配置於該基板上且具有多數個待檢測層之立體佈局晶粒與一導線電連接之導通點,且每一導通點分別電連接於一導線且該導線與該基板電連接,其包含以下步驟:組配該控制模組,以設定一平行於該導線之第三直線;組配該控制模組,以得到一第一角度,且該第一角度為第三假想直線與該等待檢測層之法線相交之一銳角之餘角;組配該控制模組,以控制該晶粒檢測模組轉動該第二角度,使該晶粒檢測模組與該第一假想直線垂直;及組配該控制模組以控制一晶粒檢測模組於一第二直線上移動至每一檢測點,以檢測每一檢測點所對應之接點。Another object of the present invention is to provide a method for detecting a three-dimensional layout die, which is suitable for assembling a control module to control a die detection module to detect a configuration on the substrate and having a plurality of a three-dimensional layout die of the layer to be inspected is electrically connected to a conductive line of the wire, and each of the conductive points is electrically connected to a wire and the wire is electrically connected to the substrate, and the method comprises the steps of: assembling the control module to Setting a third line parallel to the wire; assembling the control module to obtain a first angle, and the first angle is a complementary angle of the acute angle between the third imaginary line and the normal line of the waiting detection layer The control module is configured to control the die detection module to rotate the second angle to make the die detection module perpendicular to the first imaginary line; and the control module is assembled to control a die detection The module moves to a detection point on a second line to detect the contact point corresponding to each detection point.

於是,本發明之功效在於適當轉動該晶粒檢測模組或是基板,使得該晶粒檢測模組與每一接點或是每一導通點之間的距離介於該晶粒檢測模組織成像焦距之間,因此,該晶粒檢測模組檢測每一接點或是每一導通點時不需要重新對焦,所以可以大幅減少檢測時間,進而得以大幅降低立體佈局晶粒之檢測時間,並有效降低檢測成本。Therefore, the effect of the present invention is to properly rotate the die detection module or the substrate, such that the distance between the die detection module and each contact or each conduction point is between the die detection mode tissue imaging. Between the focal lengths, therefore, the die detection module does not need to refocus when detecting each contact or each conduction point, so the detection time can be greatly reduced, thereby greatly reducing the detection time of the three-dimensional layout die, and effectively Reduce inspection costs.

有關本發明之相關申請專利特色與技術內容,在以下配合參考圖式之三個較佳實施例的詳細說明中,將可清楚的呈現。The details of the related patents and the technical contents of the present invention will be apparent from the following detailed description of the preferred embodiments of the drawings.

第一較佳實施例First preferred embodiment

聯合參閱圖4、5,本較佳實施例適用於組配一控制模組(圖未示)控制一晶粒檢測模組9或是一基板6,使其轉動以檢測一配置於該基板6上且具有多數個待檢測層C1~C4之立體佈局晶粒4之多數個接點t1~t4,每一接點分別是對應之待檢測層與該基板6電連接之處,其包含以下步驟:步驟51是組配該控制模組,以偵測一通過該等待檢測層C1~C4之接點t1~t4之第一假想直線T;步驟52是組配該控制模組,以得到一第一角度α ,而該第一角度α 之計算方式如下:該第一假想直線T與一該等待檢測層C1~C4之法線M相交之一銳角θ,然後該銳角θ之餘角即為該第一角度α ;步驟53是組配該控制模組,以控制該晶粒檢測模組9轉動該第一角度α ,直到與該第一假想直線T垂直,同時,該晶粒檢測模組9可移動地在一與該第一假想直線T平行之第二假想直線L1上移動(也就是該晶粒檢測模組9介於二平行線L1、L2之間平行移動),且該第一假想直線T與該第二假想直線L1之距離介於該晶粒檢測模組9之一成像焦距F內;步驟54是組配該控制模組,以控制該晶粒檢測模組9在該第二假想直線L1上移動至一檢測點S1,以檢測對應之待檢測層C1,值得說明的是,該等檢測點S1~S4分別對應為該等接點t1~t4且每一檢測點至對應接點之距離d1~d4皆相等於該第一假想直線T與該第二假想直線L1之距離;步驟55是組配該控制模組,以判斷每一待檢測層是否皆已完成檢測,若是,則結束晶粒接點檢測流程,若否,執行步驟56;及步驟56是組配該控制模組以控制該晶粒檢測模組9由目前的檢測點(如:S1)移動至次一個檢測點(如:S2),以檢測對應之待檢測層之接點(如:t2),並回到步驟55。Referring to FIG. 4 and FIG. 5, the preferred embodiment is applicable to a control module (not shown) for controlling a die detection module 9 or a substrate 6 to be rotated to detect a configuration on the substrate 6. A plurality of contacts t1 to t4 of the plurality of solid layout patterns 4 of the plurality of layers C1 to C4 to be detected, each of which is electrically connected to the substrate 6 and includes the following steps Step 51 is to assemble the control module to detect a first imaginary straight line T passing through the contact t1~t4 of the waiting detection layer C1~C4; step 52 is to assemble the control module to obtain a first an angle α, and the first angle [alpha] is calculated as follows: the first virtual straight line T and the waiting a detection layer normal line M C1 ~ C4 one acute angle of intersection θ, then the complementary angle of acute angle [theta] which is the The first angle α is set; the step 53 is to assemble the control module to control the die detecting module 9 to rotate the first angle α until it is perpendicular to the first imaginary straight line T, and at the same time, the die detecting module 9 Movably moving on a second imaginary line L1 parallel to the first imaginary line T (that is, the die detection module 9 is interposed Parallel lines L1, L2 move in parallel), and the distance between the first imaginary line T and the second imaginary line L1 is within an imaging focal length F of the die detecting module 9; step 54 is to combine the control The module is configured to control the die detecting module 9 to move to a detecting point S1 on the second imaginary line L1 to detect the corresponding layer C1 to be detected. It is worth noting that the detecting points S1 to S4 respectively correspond to For the contact points t1~t4, the distance d1~d4 of each detection point to the corresponding contact point is equal to the distance between the first imaginary straight line T and the second imaginary straight line L1; step 55 is to assemble the control module To determine whether each layer to be detected has been detected, and if so, the die contact detection process is terminated, if not, step 56 is performed; and step 56 is to assemble the control module to control the die detection module. 9 moves from the current detection point (eg: S1) to the next detection point (eg, S2) to detect the corresponding contact layer (eg, t2), and returns to step 55.

由上可知,由於每一個檢測點S1~S4與對應之接點t1~t4之距離皆相同,或是其誤差範圍不超過該晶粒檢測模組9之成像焦距F外,因此,該晶粒檢測模組9檢測每一接點時不需要重新進行對焦即可有效取得每一接點的清晰影像,因此可以降低晶粒之測試時間及測試成本。As can be seen from the above, since each of the detecting points S1 to S4 has the same distance from the corresponding contact point t1~t4, or the error range does not exceed the imaging focal length F of the die detecting module 9, the die The detection module 9 can effectively obtain a clear image of each contact without re-focusing when detecting each contact, thereby reducing the test time and test cost of the die.

第二較佳實施例Second preferred embodiment

聯合參閱圖6、7,本較佳實施例與第一較佳實施例最大的不同點在於,在第一較佳實施例中,該控制模組是控制該晶粒檢測模組9轉動該第一角度α ,而在本較佳實施例中,該控制模組是控制該基板6轉動一第二角度βReferring to FIG. 6 and FIG. 7 , the biggest difference between the preferred embodiment and the first preferred embodiment is that, in the first preferred embodiment, the control module controls the die detecting module 9 to rotate the first An angle α , and in the preferred embodiment, the control module controls the substrate 6 to rotate by a second angle β .

步驟51是組配該控制模組,以偵測一通過該等待檢測層C1~C4之接點t1~t4之一第一假想直線T;步驟52’是組配該控制模組,以得到一第二角度β ,而該第二角度β 之計算方式如下:該第一假想直線T與一該等待檢測層C1~C4之法線M相交之一銳角θ,然後該銳角θ之餘角即為該第二角度β ;步驟53’是組配該控制模組,以控制該基板6轉動該第二角度β ,直到該晶粒檢測模組9與該第一假想直線T垂直,同時,該晶粒檢測模組9可移動地在一與該第一假想直線T平行之第二假想直線L1上移動(也就是該晶粒檢測模組9介於二平行線L1、L2之間平行移動),且該第一假想直線T與該第二假想直線L1之距離介於該晶粒檢測模組9之一成像焦距F內;步驟54是組配該控制模組,以控制該晶粒檢測模組9在該第二假想直線L1上移動至一檢測點S1,以檢測對應之待檢測層C1,值得說明的是,該等檢測點S1~S4分別對應為該等接點t1~t4且每一檢測點至對應接點之距離d1~d4皆相等於該第一假想直線T與該第二假想直線L1之距離;步驟55是組配該控制模組,以判斷每一待檢測層是否皆已完成檢測,若是,則結束晶粒接點檢測流程,若否,執行步驟56;及步驟56是組配該控制模組以控制該晶粒檢測模組9由目前的檢測點(如:S1)移動至次一個檢測點(如:S2),以檢測對應之待檢測層之接點(如:t2),並回到步驟55。Step 51 is to assemble the control module to detect a first imaginary straight line T passing through one of the contacts t1~t4 of the waiting detection layer C1~C4; step 52' is to assemble the control module to obtain a the second angle β, the calculation of the second angle beta] as follows: the first virtual straight line T and the waiting a detection layer normal line of one of C1 ~ C4 M intersect at an acute angle θ, then the complementary angle of acute angle [theta] is the The second angle β ; the step 53' is to assemble the control module to control the substrate 6 to rotate the second angle β until the die detecting module 9 is perpendicular to the first imaginary straight line T, and at the same time, the crystal The particle detecting module 9 is movably movable on a second imaginary straight line L1 parallel to the first imaginary straight line T (that is, the die detecting module 9 is moved in parallel between the two parallel lines L1 and L2), The distance between the first imaginary line T and the second imaginary line L1 is within the imaging focal length F of the die detecting module 9; and the step 54 is to assemble the control module to control the die detecting module. 9 is moved to a detection point S1 on the second imaginary line L1 to detect the corresponding layer C1 to be detected. It is worth noting that the inspection The points S1 to S4 correspond to the contacts t1 to t4, respectively, and the distances d1 to d4 of each of the detection points to the corresponding contacts are equal to the distance between the first imaginary line T and the second imaginary line L1; The control module is assembled to determine whether each layer to be detected has been detected. If yes, the die contact detection process is terminated. If not, step 56 is performed; and step 56 is to assemble the control module to control The die detection module 9 moves from the current detection point (eg, S1) to the next detection point (eg, S2) to detect the contact of the corresponding layer to be detected (eg, t2), and returns to step 55. .

第三較佳實施例Third preferred embodiment

參閱圖8,本較佳實施例與第一、二較佳實施例最大的不同點在於,當該控制模組無法偵測到一通過該等待檢測層C1~C4之接點t1~t4之一第一假想直線T時(也就是無法得到一第一假想直線T使得其剛好與每一待檢測層之接點t1~t4),該控制模組根據一與該基板6電連接之導線,H並設定一平行於該導線之第三假想直線,且每一待檢測層C1~C4之接點t1~t4分別與該導線H電連接於一導通點w1~w4,因此,相似於該第一較佳實施例,該控制模組可控制該晶粒檢測模組9轉動該第一角度α ,且該第一角度α 即為該第一假想直線T與該等待檢測層C1~C4之法線M相交之一銳角θ,然後取該銳角θ之餘角即為該第一角度α ,所以,該晶粒檢測模組9可移動地在一與該第一假想直線T平行之第二假想直線L1移動(也就是該晶粒檢測模組9介於二平行線L1、L2之間平行移動),以檢測每一個導通點w1~w4,此外,該第一假想直線T與該第二假想直線L1之距離介於該晶粒檢測模組9之一成像焦距F內。Referring to FIG. 8, the biggest difference between the preferred embodiment and the first and second preferred embodiments is that the control module cannot detect one of the contacts t1~t4 passing through the waiting detection layers C1~C4. When the first imaginary straight line T (that is, a first imaginary straight line T cannot be obtained such that it coincides with the contact point t1~t4 of each layer to be detected), the control module is based on a wire electrically connected to the substrate 6, H And setting a third imaginary line parallel to the wire, and the contacts t1~t4 of each layer to be detected C1~C4 are electrically connected to the wire H to a conduction point w1~w4, respectively, and thus similar to the first In a preferred embodiment, the control module can control the die detecting module 9 to rotate the first angle α , and the first angle α is the normal of the first imaginary straight line T and the waiting detection layer C1~C4. M intersects one of the acute angles θ, and then the complementary angle of the acute angle θ is the first angle α . Therefore, the die detecting module 9 is movably movable on a second imaginary line parallel to the first imaginary straight line T L1 movement (that is, the die detection module 9 moves parallel between the two parallel lines L1, L2) to detect each conduction point w1~w4 In addition, the first imaginary straight line and the distance T of the second virtual straight line L1 between the die within one module 9 detects a focal length of the imaging F.

同理,相似於該第二較佳實施例,該控制模組可控制該基板6轉動該第二角度β ,且該第二角度β 即為該第一假想直線T與該等待檢測層C1~C4之法線M相交之一銳角θ,然後取該銳角θ之餘角即為該第二角度β ,所以,該晶粒檢測模組9可移動地在一與該第一假想直線T平行之第二假想直線L1上移動,以檢測每一個導通點w1~w4,此外,該第一假想直線T與該第二假想直線L1之距離介於該晶粒檢測模組9之一成像焦距F內。Similarly, similar to the second preferred embodiment, the control module can control the substrate 6 to rotate the second angle β , and the second angle β is the first imaginary straight line T and the waiting detection layer C1~ The normal line M of C4 intersects one of the acute angles θ, and then the complementary angle of the acute angle θ is the second angle β . Therefore, the die detecting module 9 is movably parallel to the first imaginary straight line T. The second imaginary line L1 moves to detect each of the conduction points w1 to w4. Further, the distance between the first imaginary line T and the second imaginary line L1 is within an imaging focal length F of the die detecting module 9. .

綜合上述,本發明之特色在於利用適當地轉動該晶粒檢測模組或是該基板,使得該晶粒檢測模組與每一接點或是導通點之間的距離介於其成像焦距內,因此,該晶粒檢測模組檢測每一接點或是導通點時不需要重複對焦,所以可以大幅減少立體佈局之晶粒之檢測時間,進而得以大幅降低立體佈局之晶粒的檢測成本,故可以達成本發明之目的。In summary, the present invention is characterized in that the die detecting module or the substrate is appropriately rotated, so that the distance between the die detecting module and each contact or the conductive point is within the imaging focal length thereof. Therefore, the die detection module does not need to repeat the focus when detecting each contact or the conduction point, so the detection time of the die of the three-dimensional layout can be greatly reduced, thereby greatly reducing the detection cost of the die of the three-dimensional layout. The object of the invention can be achieved.

惟以上所述者,僅為本發明之較佳實施例而已,當不能以此限定本發明實施之範圍,即大凡依本發明申請專利範圍及發明說明內容所作之簡單的等效變化與修飾,皆仍屬本發明專利涵蓋之範圍內。The above is only the preferred embodiment of the present invention, and the scope of the invention is not limited thereto, that is, the simple equivalent changes and modifications made by the scope of the invention and the description of the invention are All remain within the scope of the invention patent.

4...立體佈局晶粒4. . . Three-dimensional layout grain

51~56...步驟51~56. . . step

52’~53’...步驟52’~53’. . . step

6...基板6. . . Substrate

9...晶粒檢測模組9. . . Grain inspection module

圖1是一平面佈局晶粒之示意圖;Figure 1 is a schematic view of a planar layout die;

圖2是一立體佈局晶粒之示意圖;2 is a schematic view of a three-dimensional layout die;

圖3是一立體佈局晶粒與一晶粒檢測模組之側視示意圖;3 is a side view of a three-dimensional layout die and a die detection module;

圖4是本發明之第一較佳實施例之流程圖;Figure 4 is a flow chart of a first preferred embodiment of the present invention;

圖5是該第一較佳實施例之示意圖;Figure 5 is a schematic view of the first preferred embodiment;

圖6是本發明之第二較佳實施例之流程圖;Figure 6 is a flow chart of a second preferred embodiment of the present invention;

圖7是該第二較佳實施例之示意圖;及Figure 7 is a schematic view of the second preferred embodiment; and

圖8是本發明之第三較佳實施例之示意圖。Figure 8 is a schematic illustration of a third preferred embodiment of the present invention.

51~56...步驟51~56. . . step

Claims (10)

一種立體佈局晶粒之檢測方法,適用於組配一控制模組控制一晶粒檢測模組,以檢測一配置於該基板上且具有多數個待檢測層之立體佈局晶粒之多數個接點,其包含以下步驟:組配該控制模組,以偵測一通過該等接點之第一假想直線;組配該控制模組,以得到一第一角度,且該第一角度為該第一假想直線與一該等待檢測層之法線相交之一銳角之餘角;組配該控制模組,以控制該晶粒檢測模組轉動該第一角度,使該晶粒檢測模組與該第一假想直線垂直;及組配該控制模組,以控制該晶粒檢測模組於一第二直線上移動至每一檢測點,以檢測每一檢測點所對應之接點。A method for detecting a three-dimensional layout die is suitable for assembling a control module to control a die detection module to detect a plurality of contacts of a three-dimensional layout die disposed on the substrate and having a plurality of to-be-detected layers The method includes the following steps: assembling the control module to detect a first imaginary line passing through the contacts; assembling the control module to obtain a first angle, and the first angle is the first An imaginary straight line intersecting a normal angle of the waiting detection layer with an acute angle; the control module is assembled to control the die detecting module to rotate the first angle, so that the die detecting module and the The first imaginary line is vertical; and the control module is configured to control the die detection module to move to a detection point on a second line to detect the contact point corresponding to each detection point. 依據申請專利範圍第1項所述之立體佈局晶粒之檢測方法,其中,該等接點分別為每一待檢測層與該基板電連接之處。The method for detecting a three-dimensional layout die according to claim 1, wherein the contacts are respectively electrically connected to the substrate to be detected. 依據申請專利範圍第1項所述之立體佈局晶粒之檢測方法,其中,該第二直線是一與該第一假想直線平行且與該第一假想直線之距離介於該晶粒檢測模組之一成像焦距內之直線。The method for detecting a three-dimensional layout die according to claim 1, wherein the second line is parallel to the first imaginary line and the distance from the first imaginary line is between the die detection module One of the straight lines within the imaging focal length. 一種立體佈局晶粒之檢測方法,適用於組配一控制模組控制一晶粒檢測模組與一基板,以檢測一配置於該基板上且具有多數個待檢測層之立體佈局晶粒之多數個接點,其包含以下步驟:組配該控制模組,以偵測一通過該等接點之第一假想直線;組配該控制模組,以得到一第二角度,且該第二角度為該第一假想直線與一該等待檢測層之法線相交之一銳角之餘角;組配該控制模組,以控制該基板轉動該第二角度,使該晶粒檢測模組與該第一假想直線垂直;及組配該控制模組,以控制該晶粒檢測模組於一第二直線上移動至每一檢測點,以檢測每一檢測點所對應之接點。A method for detecting a three-dimensional layout die is suitable for assembling a control module to control a die detection module and a substrate to detect a majority of a three-dimensional layout die disposed on the substrate and having a plurality of to-be-detected layers The contact includes the following steps: assembling the control module to detect a first imaginary line passing through the contacts; assembling the control module to obtain a second angle, and the second angle a corner of the acute angle intersecting the first imaginary line with a normal line of the waiting detection layer; the control module is assembled to control the substrate to rotate the second angle, so that the die detection module and the first An imaginary line is vertical; and the control module is configured to control the die detection module to move to a detection point on a second line to detect a contact point corresponding to each detection point. 依據申請專利範圍第4項所述之立體佈局晶粒之檢測方法,其中,該等接點分別為每一待檢測層與該基板電連接之處。The method for detecting a three-dimensional layout die according to claim 4, wherein the contacts are respectively electrically connected to the substrate to be detected. 依據申請專利範圍第4項所述之立體佈局晶粒之檢測方法,其中,該第二直線是一與該第一假想直線平行且與該第一假想直線之距離介於該晶粒檢測模組之一成像焦距內之直線。The method for detecting a three-dimensional layout die according to claim 4, wherein the second line is parallel to the first imaginary line and the distance from the first imaginary line is between the die detection module One of the straight lines within the imaging focal length. 一種立體佈局晶粒之檢測方法,適用於組配一控制模組控制一晶粒檢測模組及一基板,以檢測一配置於該基板上且具有多數個待檢測層之立體佈局晶粒與一導線電連接之導通點,且每一導通點分別電連接於一導線且該導線與該基板電連接,其包含以下步驟:組配該控制模組,以設定一平行於該導線之第三直線;組配該控制模組,以得到一第二角度,且該第二角度為第三假想直線與該等待檢測層之法線相交之一銳角之餘角;組配該控制模組,以控制該基板轉動該第二角度,使該晶粒檢測模組與該第一假想直線垂直;及組配該控制模組以控制一晶粒檢測模組於一第二直線上移動至每一檢測點,以檢測每一檢測點所對應之接點。A method for detecting a three-dimensional layout die is suitable for assembling a control module to control a die detection module and a substrate to detect a three-dimensional layout die disposed on the substrate and having a plurality of to-be-detected layers a conducting point of the electrical connection of the wire, and each of the conducting points is electrically connected to a wire and the wire is electrically connected to the substrate, and the method comprises the steps of: assembling the control module to set a third line parallel to the wire The control module is assembled to obtain a second angle, and the second angle is a complementary angle of the acute angle between the third imaginary straight line and the normal line of the waiting detection layer; the control module is assembled to control The substrate rotates the second angle to make the die detection module perpendicular to the first imaginary line; and the control module is configured to control a die detection module to move to a detection point on a second line To detect the contact point corresponding to each detection point. 依據申請專利範圍第7項所述之立體佈局晶粒之檢測方法,其中,該第二直線是一與該第一假想直線平行且與該第一假想直線之距離介於該晶粒檢測模組之一成像焦距內之直線。The method for detecting a three-dimensional layout die according to claim 7 , wherein the second line is parallel to the first imaginary line and the distance from the first imaginary line is between the die detection module One of the straight lines within the imaging focal length. 一種立體佈局晶粒之檢測方法,適用於組配一控制模組控制一晶粒檢測模組,以檢測一配置於該基板上且具有多數個待檢測層之立體佈局晶粒與一導線電連接之導通點,且每一導通點分別電連接於一導線且該導線與該基板電連接,其包含以下步驟:組配該控制模組,以設定一平行於該導線之第三直線;組配該控制模組,以得到一第一角度,且該第一角度為第三假想直線與該等待檢測層之法線相交之一銳角之餘角;組配該控制模組,以控制該晶粒檢測模組轉動該第二角度,使該晶粒檢測模組與該第一假想直線垂直;及組配該控制模組以控制一晶粒檢測模組於一第二直線上移動至每一檢測點,以檢測每一檢測點所對應之接點。A method for detecting a three-dimensional layout die is suitable for assembling a control module to control a die detection module to detect a three-dimensional layout die disposed on the substrate and having a plurality of to-be-detected layers electrically connected to a wire a conduction point, and each of the conduction points is electrically connected to a wire and the wire is electrically connected to the substrate, and the method comprises the steps of: assembling the control module to set a third line parallel to the wire; The control module is configured to obtain a first angle, and the first angle is a complementary angle of an acute angle between the third imaginary line and the normal line of the waiting detection layer; the control module is assembled to control the die The detecting module rotates the second angle to make the die detecting module perpendicular to the first imaginary line; and the control module is configured to control a die detecting module to move to a second straight line to each detecting Point to detect the contact point corresponding to each detection point. 依據申請專利範圍第9項所述之立體佈局晶粒之檢測方法,其中,該第二直線是一與該第一假想直線平行且與該第一假想直線之距離介於該晶粒檢測模組之一成像焦距內之直線。The method for detecting a three-dimensional layout die according to claim 9 , wherein the second line is parallel to the first imaginary line and the distance from the first imaginary line is between the die detection module One of the straight lines within the imaging focal length.
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