201029083 六、發明說明： 【發明所屬之技術領域】 本發明係關於一種半導體晶粒檢測方法，特別是—種具有雙 面電極之半導體晶粒檢測方法及該檢測機台。 【先前技術】 發光二極體(LED)逐漸廣泛應用於顯示器之背光源招牌、 手持照明裝置及汽機車之儀表指示、或信號燈，且單顆元件的發 • 光亮度逐漸提升，個別元件被單獨使用的機會大增。以往常見的 製造方法，是如圖1所示，將LED晶粒80的兩個電極81都成 型於單一側面，在製造及測試流程中，則是先將整片佈局完成的 晶圓以例如雷射進行部分切割，在各晶粒間仍保持聯繫狀況下置 放到一片供承載的塑膠膜上，使得晶圓與塑膠膜間緊密附著。 隨後因塑膝膜具有良好的延展性，當將塑膠膜12拉伸、繃 緊於如圖2所示之框架13時，原本附著於塑膠膜上的整片晶圓 8 ’將由各被切割的部分斷開，使得所有晶粒8〇彼此分離而暫時 φ 附著於塑膠膜12上’成為常見的單顆受測狀態。測試時，如圖3 所示，則是以兩組針壓組件14，分別致能此LED晶粒位於同一 側面兩電極，使得受測的單顆LED晶粒發光，並感測其發光強 度與光場分佈等資訊，從而判別該LED晶粒的好壞。 為因應不同需求’半導體晶粒也有各自不同的設計；例如目 前常見的高亮度LED晶粒，為有效增大發光表面的面積，發光 側面僅有單一致能電極，而將接地電極設置在發光面的相反側 面’且在晶圓狀態時，尚未被分離的各晶粒之接地電極彼此導 通。因此在測試時，是如圖4所示，將整片晶圓置放於單一的導 201029083 電基座is上，由導電基座15導接所有接地電極作為共同接地， 並以例如單一的針壓組件14逐一致能各晶粒9〇,並在檢測完畢 後才切割分離各晶粒90。為便於說明，以下稱呼此類接地電極與 致能電極分在兩相反側面的晶粒90為雙面電極半導體晶粒。 不幸的是，由於單一晶粒的發光強度逐漸增強，發光強度是 否精準也成為備受關注的議題，在切割過程中，即使此微的偏 差，都會使該切割偏差兩側的晶粒因發光面積非預期的增大或縮 ^ 小，導致發光強度過大或過小而減損其價值。如何確認每一顆晶 粒的發光強度，並正確分類，使出廠產品規格齊一，便成為提升 產品競爭力與價格的不二法門。 而此種雙面電極晶粒在置放於塑膠膜，並拉伸塑勝膜而使晶 粒彼此分離後，由於接地電極與致能電極之一必然平貼於不導電 的塑膠膜上，若以導針戳破藍膜接觸底部電極（由塑膠膜承載）， 導通時所產生之高溫會導致藍膜在約60度時即開始熔融，因此 一方面不能像整片晶圓時，以導電基座導接至共同接地電極，以 〇 單一針壓組件導接致能致能電極而使其發光受測；也不能以兩組 位於同一側面的針壓組件致能發光，也就是說依照目前技術， 此種具有雙面電極的半導體晶粒在分離後並無適當的自動化檢 測方法。 承上所述，若能利用與現有技術大致相容的檢測方法及檢測 機台’供檢測各分離後的上述絲，將使得晶粒的電氣性能被精 確測出，產品品質從而提升。 【發明内容】 本發明之一目的，在提供一種可檢測切割分離後不再相互 201029083 電性連結的雙面電極半導趙晶粒之檢測方法。 本發明之^—目的，在提供—種具有良好導電性及導熱性的 承載裝置之雙面電極半導趙晶粒檢測機台。 本發明之再—目的’在提供-種可穩固固定受測晶粒之雙面 電極半導體晶粒檢測機台。 本發明係一種具有雙面電極半導體晶粒檢測方法，包含下列 步驟.a)提供-組具有一層金屬導電膜及一層形成於該金屬導電 ❹ 膜t之導電黏著層的承置；b)其雙面電極之-被導電接觸並 附著於該承載裝置導電黏著層，設置複數具有雙面電極之半導體 曰曰粒於該承載裝置上；e)以至少__組針麼組件導電接觸該等半導 體晶粒之至少-者的該另—面電極進行檢測；及d)獲得該檢測結 果。 本發明更揭露一種具有雙面電極半導體晶粒檢測機台，包 含.一組承載裝置，包括··一層金屬導電膜；一個固定並繃緊該 金屬導電膜之框架；及一層形成於該金屬導電膜上、供該等具有 φ 雙面電極半導體晶粒的雙面電極之一被導電接觸並附著其上的 導電黏著層，一組電氣連接該承載裝置之該金屬導電膜及/或該 導電黏著層、並支撐該承載裝置之導電基座；一組供導電接觸該 等半導體晶粒之至少一者的該另一面電極之針壓組件；一組供處 理該待測半導體晶粒所發訊號之處理裝置。 利用本發明，切割偏差而發光面積非預期變化的具有雙面電 極晶粒，以單一針壓組件導接致能而接受測試，令晶粒的電氣性 能被精確測出，在出貨給顧客前，挑掉非合格晶粒或進行發光亮 度分類，使顧客獲得不良率趨近於〇 ppm及最符合顧客要求的晶 5 201029083 粒’從而解決習知檢測方法及機台的上述問題。 【實施方式】 人有關本發明之前述及其他技術内容、特點與功效，在以下配 合參考圖式之較佳實施_詳細制中，將可清楚的呈現。為方 便說月本發明之檢測機台係例示為發光測試機台，且半導體晶 粒係種發光二極體晶粒；當然，若彻本發明針對具有雙面電 極之半導趙元件進行它項制亦屬本案之範嘴無疑。 如圖5、6、7所示之本發明第—實施例，依圖8所示檢測步 驟’先以步驟a)提供-承載裝置21電氣接觸測試機台之導電基 座25，且本例中，該承載裝置21更包含有一層例示為銅箱的金 屬導電膜21卜-層表面阻抗小於〇 〇6歐姆之導電黏著層犯及 用以固定該承載裝置21的框架213 ,並被導電基座25所支撐； 隨後進行步驟b)令具有特定延展性基板92的複數雙面電極半導 體晶粒90雙面電極91之一被導電接觸於承載裝置21。 而該步驟b)更依序包含下列三個步驟：bl)將一片尚未被切 割，並具有複數上文所述晶粒90的晶圓9,置放於一片於此例示 為藍膜的可延展基片7上，且該片藍膜之厚度及延展性分別約為 l〇〇/zm及200%;b2)拉伸該可延展基片7,使得該晶圓9中的晶 粒90彼此分離；及b3)搬移該等彼此分離的晶粒9〇 ,令其單一 面電極91朝上，另一面電極91則導電接觸並附著於該承載裝置 21之導電黏著層212。 承上並參照圖9進行步驟c)’該檢測機台2以一組針壓組件 24導電接觸該等半導體晶粒90之一的朝上面電極91以進行晶粒 發光檢測’並由光感測器261接收其發光資料。再進行步驟句 201029083 由處理裝置26處理發光檢測資料並紀錄該檢測結果。 再者參…、圓10,上述晶粒檢測方法檢測步驟亦可如圖η 所示方式施行’此㈣本發H實施例，不同於前例之處則 為其㈣b)餘耗含糾三個刊㈣：μ)纽—片尚未 分離、並包括複數雙面電極晶粒的晶圓於承載裝置導電黏著層， 並以其雙面電極之-導電接觸該承載裝置；b5)拉伸該延展性優 於半導艘晶粒基板的金屬導電膜，使該等晶粒彼此分離；及从) 〇 將該金屬導電膜固定至-組框架上，使該等晶粒保持彼此分離。 承上，更因為前例所述之藍膜，係一種難以重複使用的耗 材，欲將每片晶圓分離出晶粒時，皆需使用—片藍膜；而相較於 前文之檢測方式，本例不僅將節省下藍膜的不斐成本，更無須耗 用時間將已被分離的複數晶粒轉置於承載裝置，進一步減少了部 份工序及其所用時，’而提升了晶粒檢測之效率；當該等複數 晶粒皆已檢測完畢時，其發光資料亦傳送至處理裝置，則進行步 驟e)由汲取裝置27’逐一將晶粒搬離承載裝置，得以進行隨後 參 的分類動作；而該汲取裝置27,之汲取分離動作係先後以el)隱 藏於導電基座底面的頂撐件271’頂撐承載裝置之金屬導電膜及 導電黏著層，減少晶粒附著導電黏著層之面積，再以e2)一組汲 取件272’以一個大於該導電黏著層黏著力之汲取力，將該待分類 B曰粒没取脫離該導電黏著層。再者，本例所示之導電勒著層係一 層導電膠，該層導電膠的黏著力約為9.8nt/in，且其黏著性可被 調整’而能輕黎適用於不同種類的待測晶粒及汲取裝置。 如此，藉由本發明所揭露之具有雙面電極半導體晶粒檢測機 台，依一個自動化檢測流程，令由晶圓分離之雙面電極晶粒的電 201029083 氣性能被精確測出’使顧客能獲得不良率0ppm的晶粒，不僅提 昇檢測結果之精度及效率，並正確分類完測晶粒，使顧客出廠產 品規格、品質得以一致，增加了產品受檢測後的市場價值。 惟以上所述者’僅為本發明之較佳實施例，當不能以此限定 本發明實施之範圍，即大凡依本發明申請專利範圍及發明說明内 容所作簡單的等效變化與修飾，皆仍屬本發明專利涵蓋之範圍 内。 【圖式簡單說明】 圖1為同一側面兩電極的LED晶粒之俯視示意圖； 圖2為位於塑膠膜上各自分離的led晶粒之俯視示意圖； 圖3為習知同一側面兩電極LED晶粒，利用塑膠膜承載而 接受測試的立體示意圖； 圖4為習知另一晶粒，以導電基座承載而接受測試的立體示 意圖； 圖5為本發明第一實施例之具有雙面電極半導體晶粒檢測機 台’其電氣接觸承載裝置的導電基座立體示意圖； 圖6為本發明第一實施例之承載晶圓的藍膜俯視示意圖； 圖7為本發明第一實施例之承載裝置之金屬導電膜、導電黏 著層及框架的示意圖； 圖8為本發明第一實施例之具有雙面電極半導體晶粒檢測方 法的步驟示意圖； 圖9為本發明第一實施例之具有雙面電極半導體晶粒檢測機 台的立體示意圏； 囷10為本發明第二實施例之汲取裝置示意圖； 201029083 圖11為本發明第二實施例之另一晶粒檢測方法的步驟示意 圖。 【主要元件符號說明】 12...塑膠膜 27’…汲取裝置 13、213...框架 27Γ...頂撐件 14、24…針壓組件 272’…汲取件 15、25…導電基座 7...可延展基片 2...檢測機台 8、9…晶圓 21...承載裝置 80、90."晶 211...金屬導電膜 81、91···電極 212...導電黏著層 26…處理裝置 92…基板 261...光感測器 a—e、bl)----b6)、el)、e2)、b’…步驟201029083 6. Technical Field of the Invention The present invention relates to a semiconductor die detecting method, and more particularly to a semiconductor die detecting method having a double-sided electrode and the detecting machine. [Prior Art] Light-emitting diodes (LEDs) are increasingly used in backlights for displays, hand-held lighting devices, and instrument indicators, or signal lights for motor vehicles, and the brightness of individual components is gradually increased, and individual components are individually The opportunities for use have increased dramatically. In the past, the common manufacturing method is as shown in FIG. 1. The two electrodes 81 of the LED die 80 are formed on a single side. In the manufacturing and testing process, the wafers of the entire layout are firstly thundered. The shot is partially cut and placed in a piece of plastic film for carrying under the condition that the dies are kept in contact with each other, so that the wafer and the plastic film are closely adhered. Subsequently, since the plastic knee film has good ductility, when the plastic film 12 is stretched and stretched to the frame 13 as shown in FIG. 2, the entire wafer 8' originally attached to the plastic film will be cut by each. Partially disconnected, so that all of the dies 8 分离 are separated from each other and temporarily φ attached to the plastic film 12 ' becomes a common single measured state. During the test, as shown in FIG. 3, two sets of acupressure assemblies 14 are respectively enabled to respectively align the LED dies on the same side, so that the single LED dies are illuminated, and the illuminance is sensed. Information such as the distribution of the light field to determine the quality of the LED die. In order to meet different needs, 'semiconductor crystals also have different designs; for example, the currently common high-brightness LED dies, in order to effectively increase the area of the light-emitting surface, the light-emitting side has only a single uniform energy electrode, and the ground electrode is disposed on the light-emitting surface. The opposite side 'and in the wafer state, the ground electrodes of the respective crystal grains that have not been separated are electrically connected to each other. Therefore, in the test, as shown in FIG. 4, the whole wafer is placed on a single conductive guide 201029083, and all the ground electrodes are connected by the conductive base 15 as a common ground, and for example, a single needle. The press assembly 14 can uniformly align each of the dies 9 and cut and separate the dies 90 after the detection is completed. For convenience of explanation, the crystal grains 90 which are hereinafter referred to as the ground electrode and the enable electrode on opposite sides are double-sided electrode semiconductor dies. Unfortunately, due to the gradual enhancement of the luminescence intensity of a single crystal grain, the accuracy of the luminescence intensity has become a topic of concern. Even during this dicing process, even the slight deviation will cause the grain on both sides of the dicing deviation to be due to the illuminating area. Unexpected increases or decreases are small, resulting in excessive or too small a luminous intensity that detracts from its value. How to confirm the luminous intensity of each crystal grain and correctly classify it so that the specifications of the factory products are the same, it becomes the only way to improve the competitiveness and price of the product. When the double-sided electrode die is placed on the plastic film and the plastic film is stretched to separate the crystal grains, one of the ground electrode and the enabling electrode must be flat on the non-conductive plastic film. The pin is used to puncture the blue film to contact the bottom electrode (which is carried by the plastic film). The high temperature generated during the conduction causes the blue film to melt at about 60 degrees. Therefore, on the one hand, it cannot be like a whole wafer. The socket is connected to the common grounding electrode, and the single-needle pressure component is connected to enable the enabling electrode to cause the light to be measured; nor can the two sets of the needle-pressing components on the same side be illuminated, that is, according to the current technology Such a semiconductor die having a double-sided electrode does not have an appropriate automated detection method after separation. As described above, if the detection method and the inspection machine table which are substantially compatible with the prior art can be used for detecting the separated wires, the electrical properties of the crystal grains can be accurately measured, and the quality of the product can be improved. SUMMARY OF THE INVENTION It is an object of the present invention to provide a method for detecting a semi-conductive electrode semi-conductive die which is electrically connected to each other without being mutually connected to 201029083 after cutting and separating. SUMMARY OF THE INVENTION The object of the present invention is to provide a double-sided electrode semi-conductive die inspection machine for a carrier having good electrical conductivity and thermal conductivity. A further object of the present invention is to provide a double-sided electrode semiconductor die inspection machine capable of stably fixing a die to be tested. The invention relates to a method for detecting a semiconductor wafer having a double-sided electrode, comprising the following steps: a) providing a set of a metal conductive film and a conductive adhesive layer formed on the metal conductive film t; b) The surface electrode is electrically contacted and attached to the conductive adhesive layer of the carrier, and a plurality of semiconductor particles having double-sided electrodes are disposed on the carrier; e) conductively contacting the semiconductor crystals with at least a group of pins The at least one of the particles is detected by the other surface electrode; and d) the detection result is obtained. The invention further discloses a double-sided electrode semiconductor die detecting machine, comprising: a set of carrying devices, comprising: a metal conductive film; a frame for fixing and tightening the metal conductive film; and a layer formed on the metal conductive a conductive adhesive layer on the film for which one of the double-sided electrodes having the φ double-sided electrode semiconductor die is electrically contacted and adhered thereto, and a set of the metal conductive film electrically connected to the carrier and/or the conductive adhesive And a conductive base of the support device; a set of acupuncture components for electrically contacting the at least one of the semiconductor dies; and a set of signals for processing the semiconductor die to be tested Processing device. By using the invention, the double-sided electrode die with the deviation of the cutting and the unintended change of the light-emitting area is tested by the single pin-pressing component, and the electrical performance of the die is accurately measured before being shipped to the customer. The non-qualified dies are sorted out or the illuminating brightness is classified, so that the customer obtains the crystal 5 201029083 granules whose defect rate is close to 〇ppm and most in line with the customer's requirements, thereby solving the above problems of the conventional detection method and the machine. The above-mentioned and other technical contents, features and effects of the present invention will be apparent from the following detailed description of the preferred embodiments of the present invention. For convenience, the detection machine of the present invention is exemplified as an illuminating test machine, and the semiconductor die is a kind of illuminating diode dies; of course, the present invention is directed to a semi-conductive element having a double-sided electrode. The system is also a vanity in this case. As shown in the fifth embodiment of the present invention, as shown in FIGS. 5, 6, and 7, the detecting step shown in FIG. 8 is first provided in step a) - the carrying device 21 electrically contacts the conductive base 25 of the testing machine, and in this example The carrying device 21 further comprises a conductive conductive layer 21, which is illustrated as a copper box, and a conductive adhesive layer having a surface impedance of less than 6 ohms, and a frame 213 for fixing the carrier 21, and is electrically conductive. 25 is supported; subsequently step b) is performed such that one of the plurality of double-sided electrode semiconductor die 90 having the specific ductility substrate 92 is electrically contacted to the carrier device 21. And step b) further comprises the following three steps: bl) placing a piece of wafer 9 which has not been cut and having a plurality of wafers 90 as described above, placed on a piece of extensible exemplified herein as a blue film On the substrate 7, and the thickness and ductility of the blue film are about l〇〇/zm and 200%, respectively; b2) stretching the extensible substrate 7 so that the crystal grains 90 in the wafer 9 are separated from each other And b3) moving the mutually separated crystal grains 9〇 such that the single-sided electrode 91 faces upward, and the other surface electrode 91 is electrically contacted and adhered to the conductive adhesive layer 212 of the carrier device 21. Step c) 'the detection machine 2 electrically contacts the upper electrode 91 of one of the semiconductor crystal grains 90 for grain emission detection' and is sensed by light by a set of acupressure assemblies 24 The 261 receives its illuminating data. Further, the step sentence 201029083 processes the luminescence detection data by the processing device 26 and records the detection result. In addition, the parameters of the above-mentioned grain detection method can also be performed as shown in Figure η. The fourth embodiment of the present invention is different from the previous example (b). (4): μ) New: the wafer has not been separated, and includes a plurality of double-sided electrode dies on the conductive adhesive layer of the carrying device, and the double-sided electrode is electrically conductively contacted with the carrying device; b5) stretching the ductility The metal conductive film of the semi-conducting die substrate separates the crystal grains from each other; and the metal conductive film is fixed to the group frame so that the crystal grains are kept separated from each other. The blue film described in the previous example is a difficult-to-reuse consumable. To separate each wafer into a die, a blue film is required. Compared with the previous detection method, The example will not only save the cost of the blue film, but also eliminate the need to spend time to transfer the separated multiple crystal grains to the carrying device, further reducing some of the processes and their use, and improving the grain inspection. Efficiency; when the plurality of dies have been detected, the illuminating data is also transmitted to the processing device, and then step e) is carried out by the picking device 27' to move the dies one by one to perform the sorting operation of the subsequent parameters; The picking device 27, the picking and separating operation system is e) concealed in the bottom support member 271' of the bottom surface of the conductive base to support the metal conductive film and the conductive adhesive layer of the carrying device, thereby reducing the area of the conductive adhesion layer of the die adhesion layer. Then, e2) a set of picking members 272' with a force greater than the adhesive force of the conductive adhesive layer, the B particles to be classified are not taken out of the conductive adhesive layer. Furthermore, the conductive pull layer shown in this example is a layer of conductive adhesive. The adhesive of this layer has an adhesion of about 9.8 nt/in, and its adhesion can be adjusted, and it can be applied to different types of test. Grain and picking device. Thus, with the double-sided electrode semiconductor die inspection machine disclosed in the present invention, according to an automated inspection process, the electrical performance of the double-sided electrode die separated by the wafer is accurately measured, so that the customer can obtain The grain with a non-defect rate of 0ppm not only improves the accuracy and efficiency of the test results, but also correctly classifies the die, so that the specifications and quality of the products manufactured by the customer are consistent, which increases the market value of the product after the test. However, the above description is only a preferred embodiment of the present invention, and the scope of the present invention is not limited thereto, that is, the simple equivalent changes and modifications made by the scope of the invention and the description of the invention are still It is within the scope of the patent of the present invention. BRIEF DESCRIPTION OF THE DRAWINGS FIG. 1 is a top plan view of LED dies of two electrodes on the same side; FIG. 2 is a top plan view of respective separated LED dies on a plastic film; FIG. 3 is a conventional two-electrode LED dies on the same side FIG. 4 is a perspective view showing another conventional die, which is carried by a conductive pedestal and subjected to testing; FIG. 5 is a double-sided electrode semiconductor crystal according to a first embodiment of the present invention; FIG. 6 is a top plan view of a blue film of a carrier wafer according to a first embodiment of the present invention; FIG. 7 is a schematic view of a metal film of a carrier device according to a first embodiment of the present invention; FIG. 8 is a schematic view showing the steps of a method for detecting a semiconductor wafer having a double-sided electrode according to a first embodiment of the present invention; FIG. 9 is a plan view showing a semiconductor wafer having a double-sided electrode according to a first embodiment of the present invention; 3 is a schematic view of a picking device of a second embodiment of the present invention; 201029083 FIG. 11 is another die inspection of a second embodiment of the present invention. A schematic diagram of the steps of the test method. [Description of main component symbols] 12...Plastic film 27'...Tapping device 13,213...Frame 27Γ...Top support 14,24...Anchor assembly 272'...Capture member 15,25...Conducting base 7...extensible substrate 2...detection machine 8,9...wafer 21...bearing device 80,90."crystal 211...metal conductive film 81, 91···electrode 212. .. Conductive adhesive layer 26...processing device 92...substrate 261...photosensor a-e, bl)----b6), el), e2), b'...step