WO2021068539A1 - Inspection device and method for micro light-emitting diode - Google Patents

Inspection device and method for micro light-emitting diode Download PDF

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Publication number
WO2021068539A1
WO2021068539A1 PCT/CN2020/095334 CN2020095334W WO2021068539A1 WO 2021068539 A1 WO2021068539 A1 WO 2021068539A1 CN 2020095334 W CN2020095334 W CN 2020095334W WO 2021068539 A1 WO2021068539 A1 WO 2021068539A1
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WO
WIPO (PCT)
Prior art keywords
electrode
emitting diode
micro
light
contact
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PCT/CN2020/095334
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French (fr)
Chinese (zh)
Inventor
夏继业
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成都辰显光电有限公司
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Priority to KR1020227009802A priority Critical patent/KR20220045052A/en
Publication of WO2021068539A1 publication Critical patent/WO2021068539A1/en

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    • GPHYSICS
    • G01MEASURING; TESTING
    • G01RMEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R31/00Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
    • G01R31/28Testing of electronic circuits, e.g. by signal tracer
    • G01R31/2832Specific tests of electronic circuits not provided for elsewhere
    • G01R31/2836Fault-finding or characterising
    • G01R31/2844Fault-finding or characterising using test interfaces, e.g. adapters, test boxes, switches, PIN drivers
    • GPHYSICS
    • G01MEASURING; TESTING
    • G01JMEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
    • G01J1/00Photometry, e.g. photographic exposure meter
    • GPHYSICS
    • G01MEASURING; TESTING
    • G01MTESTING STATIC OR DYNAMIC BALANCE OF MACHINES OR STRUCTURES; TESTING OF STRUCTURES OR APPARATUS, NOT OTHERWISE PROVIDED FOR
    • G01M11/00Testing of optical apparatus; Testing structures by optical methods not otherwise provided for
    • GPHYSICS
    • G01MEASURING; TESTING
    • G01RMEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R31/00Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
    • G01R31/26Testing of individual semiconductor devices
    • GPHYSICS
    • G01MEASURING; TESTING
    • G01RMEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R31/00Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
    • G01R31/28Testing of electronic circuits, e.g. by signal tracer
    • G01R31/282Testing of electronic circuits specially adapted for particular applications not provided for elsewhere
    • G01R31/2825Testing of electronic circuits specially adapted for particular applications not provided for elsewhere in household appliances or professional audio/video equipment
    • GPHYSICS
    • G01MEASURING; TESTING
    • G01RMEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R31/00Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
    • G01R31/28Testing of electronic circuits, e.g. by signal tracer
    • G01R31/2832Specific tests of electronic circuits not provided for elsewhere
    • G01R31/2836Fault-finding or characterising
    • G01R31/2837Characterising or performance testing, e.g. of frequency response
    • GPHYSICS
    • G01MEASURING; TESTING
    • G01RMEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R31/00Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
    • G01R31/28Testing of electronic circuits, e.g. by signal tracer
    • G01R31/2832Specific tests of electronic circuits not provided for elsewhere
    • G01R31/2836Fault-finding or characterising
    • G01R31/2843In-circuit-testing
    • GPHYSICS
    • G01MEASURING; TESTING
    • G01RMEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R31/00Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
    • G01R31/26Testing of individual semiconductor devices
    • G01R31/2607Circuits therefor
    • G01R31/2632Circuits therefor for testing diodes
    • G01R31/2635Testing light-emitting diodes, laser diodes or photodiodes

Definitions

  • the present disclosure relates to the field of display technology, and in particular to a detection device and method for micro-light emitting diodes.
  • a micro-light-emitting diode display is a display that integrates a high-density and small-size LED array on a primitive substrate to realize image display; it is widely used because of its high quality, thin body, and low energy consumption. The mainstream in the installation.
  • micro-light-emitting diode displays In the manufacturing process of micro-light-emitting diode displays, it is usually necessary to grow multiple micro-light-emitting diodes on the original substrate (such as sapphire substrate) by molecular epitaxy. These micro-light-emitting diodes can form a Micro-LED array;
  • the peeling technology peels off the micro light emitting diode from the original substrate, and uses the transfer head to transfer the micro light emitting diode to a predetermined position on the receiving substrate, and binds with the receiving substrate.
  • the micro-light-emitting diode is prone to breakage when it is peeled from the original substrate. Therefore, the brightness of the micro-light-emitting diode display needs to be tested after the production is completed. Once the micro-light-emitting diode display is found to be poor, the micro-light-emitting diode needs to be repaired; The LED display manufacturing process has been completed, which increases the difficulty of repairing the micro LED display.
  • the embodiments of the present disclosure provide a detection device and method for micro-light-emitting diodes, which can reduce the difficulty of repairing micro-light-emitting diode displays.
  • One aspect of the embodiments of the present disclosure provides a detection device for micro-light-emitting diodes, which is used to detect micro-light-emitting diodes arranged on an original substrate.
  • the bottom of the micro-light-emitting diodes away from the original substrate includes electrode regions and non-electrodes.
  • the detection device includes: a detection substrate and a detection circuit, wherein: the detection substrate is provided with an adhesive layer, and the adhesive layer is used for During testing, it is bonded with the non-electrode area of the micro light-emitting diode; the detection circuit includes an electrode group arranged on the bonding layer, the electrode group includes a first electrode and a second electrode, the first electrode It is used to contact the first contact of the micro light emitting diode during testing, and the second electrode is used to contact the second contact of the micro light emitting diode during testing.
  • the adhesive layer is a flexible adhesive layer, and the first electrode and the second electrode are both flexible electrodes; the micro light-emitting diode is embedded in the flexible adhesive layer during testing, The first contact is embedded in the first electrode, and the second contact is embedded in the second electrode.
  • a recessed area is provided in the adhesive layer, and the first electrode and the second electrode are provided in the recessed area.
  • the detection circuit includes a plurality of electrode groups, and each electrode group includes a strip-shaped first electrode and a strip-shaped second electrode that are arranged in parallel and opposite to each other; and each first electrode in the plurality of electrode groups The electrodes are parallel to each other, and the second electrodes in the plurality of electrode groups are parallel to each other.
  • the first electrode and the second electrode are distributed in staggered intervals.
  • the second electrode input part and the first electrode input part are disposed on both sides of the adhesive layer opposite to the first electrode input part.
  • the detection device further includes a first electrode input part located at the first end of each of the first electrodes and connected to the first end of each of the first electrodes, and located at each of the second electrodes.
  • the second electrode input part and the first electrode input part are disposed on both sides of the adhesive layer opposite to the first electrode input part.
  • the first electrode and the second electrode are metal traces with elasticity.
  • the first electrode and the second electrode are made of metal-type carbon nanotube films.
  • the first electrode is a P electrode (Positive Electrode, positive electrode), and the second electrode is an N electrode (Negative Electrode, negative electrode).
  • the first electrode or the second electrode is formed of a flexible metal trace or a metal carbon nanotube film.
  • the binding force between the non-electrode area on one side of the micro light emitting diode and the adhesive layer is less than the binding force between the other side of the micro light emitting diode and the transfer head.
  • the detection substrate is a rigid substrate.
  • the adhesive layer is an acrylic bonding adhesive layer.
  • the detection circuit is arranged on a side of the adhesive layer away from the detection substrate.
  • Another aspect of the embodiments of the present disclosure provides a method for detecting micro-light-emitting diodes, which includes the following steps: placing an original substrate provided with micro-light-emitting diodes above the bonding layer of the detection substrate, and the second part of the micro-light-emitting diodes A contact is arranged opposite to the first electrode arranged on the adhesive layer, and the second contact of the micro light emitting diode is arranged opposite to the second electrode arranged on the adhesive layer; pressing down the original A substrate, the first contact is in contact with the first electrode, the second contact is in contact with the second electrode, and the non-electrode area of the micro light emitting diode is bonded to the adhesive layer; peeling The original substrate separates the original substrate from the micro light-emitting diode; applies a detection voltage to the first electrode and the second electrode, and observes the light-emitting brightness of the micro light-emitting diode.
  • the detection method of the micro-light-emitting diode further includes: in the process of applying a detection voltage to the first electrode and the second electrode for detection, using a photodetector to detect the micro-light-emitting diode The luminous brightness is detected, and a distribution map of the defective micro-LEDs is generated; based on the above-mentioned distribution of the defective micro-LEDs, the transfer head is used to transfer the qualified micro-LEDs.
  • the detection device and method for micro-light-emitting diodes provided by the embodiments of the present disclosure have the following advantages:
  • the micro-light-emitting diode detection device and method provided by the present disclosure include a detection substrate, and an adhesive layer is provided on the detection substrate, and the first electrode and the second electrode are provided on the adhesive layer, and the first contact of the micro-light-emitting diode The dot can be electrically connected to the first electrode, and the second contact of the micro light emitting diode can be electrically connected to the second electrode. After the non-electrode area where the micro light emitting diode is provided is bonded to the adhesive layer, the original substrate and the micro The light-emitting diode is peeled off, a detection voltage is applied to the first electrode and the second electrode, and the light-emitting brightness of the micro light-emitting diode is observed.
  • the micro-light-emitting diode detection device and method provided in the present disclosure use the above-mentioned detection device to detect the micro-light-emitting diode before the micro-light-emitting diode is transferred to the receiving substrate, and use the transfer head to transfer the qualified micro-light-emitting diode to the receiving substrate and bind it. Therefore, it is possible to avoid transferring the poorly displayed micro-light-emitting diodes to the receiving substrate, and reduce the difficulty of repairing the micro-light-emitting diode display.
  • the detection device and method for micro-light-emitting diodes can solve Other technical issues, other technical features included in the technical solution, and beneficial effects brought about by these technical features will be described in further detail in the specific implementation.
  • FIG. 1 is a schematic diagram of a micro light-emitting diode generated on an original substrate in the related art
  • FIG. 2 is a first structural schematic diagram of a micro light emitting diode detection device provided by an embodiment of the disclosure
  • FIG. 3 is a second structural schematic diagram of a micro-light emitting diode detection device provided by an embodiment of the disclosure.
  • FIG. 5 is a schematic diagram of the steps of a detection method of a micro light emitting diode provided by an embodiment of the disclosure.
  • the original substrate 10 can be a sapphire substrate, a silicon substrate, a silicon carbide substrate or a gallium nitride substrate.
  • the original substrate 10 is provided with a micro light emitting diode 20, or the original substrate 10 is provided with multiple One micro light emitting diode 20; for example, a plurality of micro light emitting diodes 20 may be provided on a sapphire substrate, and the plurality of micro light emitting diodes 20 may form a Micro-LED array.
  • the plurality of micro light emitting diodes 20 may be divided or divided into a plurality of regions, which is convenient for flexible transfer.
  • the micro light emitting diode 20 is provided with an electrode area and a non-electrode area 23 at the bottom away from the original substrate 10, and the electrode area includes a first contact 21 and a second contact 22, the first contact 21 and the second contact 22
  • the manufacturing material can be one or a combination of metals such as nickel, molybdenum, aluminum, gold, platinum, and titanium; the micro-light-emitting diode 20 is bound with the receiving substrate to form a micro-light-emitting diode display, which is useful for the finished micro-light-emitting diode display. It needs to be tested.
  • the micro-light-emitting diode needs to be repaired; but at this time the manufacturing process of the micro-light-emitting diode display has been completed, which increases the difficulty of detection of the micro-light-emitting diode display.
  • the micro-light-emitting diode detection device As shown in Figures 2, 3 and 4, the micro-light-emitting diode detection device provided by the embodiment of the present disclosure is used to detect the micro-light-emitting diode 20 arranged on the original substrate 10; the micro-light-emitting diode detection device includes a detection substrate 30 and a detection circuit, wherein the detection substrate 30 is a hard substrate and can be manufactured by using a glass substrate.
  • the detection substrate 30 is provided with an adhesive layer on its side surface facing the original substrate 10 40.
  • An acrylic bonding adhesive layer can be provided on the glass substrate; for example, polymethyl methacrylate resin is used as a temporary bonding adhesive to be provided on the surface of the glass substrate, and the detection circuit is provided on the adhesive layer 40 away from the detection One side of the substrate.
  • the detection circuit includes at least one set of electrode groups, and each set of electrode groups includes a first electrode 50 and a second electrode 60.
  • the first electrode 50 and the second electrode 60 may be detection points arranged on the adhesive layer 40, and
  • the first contact 21 of the micro light-emitting diode 20 is connected to a detection point, the second contact 22 is connected to another detection point, and detection is applied to the detection points connected by the first contact 21 and the second contact 22 Voltage, can detect the light-emitting brightness of light-emitting diodes.
  • each electrode group can be The first electrode 50 and the second electrode 60 are arranged in parallel and opposite to each other, and the first electrode 50 and the second electrode 60 are both elongated electrodes.
  • the first electrode 50 and the second electrode 60 can be arranged at intervals of rows or columns.
  • On the detection substrate 30 According to the distribution of the multiple micro-light-emitting diodes 20 on the original substrate 10, multiple electrode groups can be provided on the detection substrate 30.
  • the first electrodes 50 in the multiple electrode groups are arranged parallel to each other, and the second electrode group in the multiple electrode groups
  • the electrodes 60 are arranged parallel to each other.
  • a plurality of first electrodes 50 may be distributed on the adhesive layer 40 in rows, and at the same time, a plurality of second electrodes 60 may also be distributed on the adhesive layer 40 in rows; and the first electrodes 50 and the second electrodes 60 are staggered
  • the interval distribution, the interval between the first electrode 50 and the second electrode 60 can be adjusted according to the interval between the first contact 21 and the second contact 22.
  • the plurality of first electrodes 50 may also be distributed in columns, and the plurality of second electrodes 60 may also be distributed in columns.
  • the original substrate provided with the micro light emitting diode is first moved above the detection substrate, and the first contact 21 is connected to the first electrode 50, and the second contact 22 is connected to On the second electrode 60, and the non-electrode area 23 of the micro light emitting diode 20 (including the area between the first contact 21 and the second contact 22) is bonded on the adhesive layer 40; then the first electrode 50 and A detection voltage is applied to one end of the second electrode 60 to observe the light-emitting brightness of the micro-light-emitting diode and determine whether it is damaged.
  • the transfer head can be moved to the receiving substrate for further production, which can avoid poor display.
  • the micro light emitting diode is transferred to the receiving substrate, which reduces the difficulty of repairing the micro light emitting display.
  • the adhesive layer 40 is a flexible adhesive layer, and the first electrode 50 and the second electrode 60 are both flexible electrodes; the micro light emitting diode 20 is embedded in the flexible adhesive layer 40 during the test, and the first touch The dot 21 is embedded in the first electrode 50 and the second contact 22 is embedded in the second electrode 60.
  • the first electrode 50 and the second electrode 60 described above are formed on the surface of the adhesive layer 40 away from the detection substrate 30, and the first electrode 50 and the second electrode 60 may both be flexible electrodes, that is, the first electrode 50 and the second electrode
  • the second electrode 60 has a certain deformability. Since the adhesive layer 40 is a flexible adhesive layer, when the first contact 21 and the second contact 22 are pressed against the adhesive layer 40, the first electrode 50 and the second electrode 60 can follow the first contact 21 and the second contact.
  • the two contacts 22 are recessed toward the inside of the adhesive layer 40, so that the first contact 21 and the second contact 22 are in contact with the first electrode 50 and the second electrode 60, respectively.
  • the non-electrode area 23 at the bottom of the original substrate 10 can be adhered to the adhesive layer 40, so that the micro light-emitting diode 20 can be bonded to the adhesive layer 40.
  • the diode 20 is stably connected to the adhesive layer 40 to enhance the stability of the electrical connection between the first electrode 50 and the first contact 21 and the second electrode 60 and the second contact 22.
  • a recessed area may be provided on the adhesive layer 40 according to the size of the contact provided by the micro light emitting diode 20, the first electrode 50 and the second electrode 60 are provided in the recessed area, and the first contact The point 21 and the second contact 22 are respectively embedded in the recessed area, so that the first contact 21 is in contact with the first electrode 50 and the second contact 22 is in contact with the second electrode 60.
  • the first contact 21 and the second contact 22 are to be embedded in the recessed area, and the non-electrode area 23 of the micro light emitting diode can be bonded on the surface of the adhesive layer 40.
  • the flexible first electrode 50 and the second electrode 60 are arranged on the flexible adhesive layer 40, which can facilitate the connection of the contacts of the micro light emitting diode 20 of different shapes, so that the micro light emitting diode 20 can be connected. It is firmly connected to the detection substrate 30, so that there is good conductivity between the two, and the stability of the micro-light-emitting diode detection device can be improved.
  • the first ends of the plurality of first electrodes 50 may be gathered on one side of the adhesive layer 40 to form the first electrode input portion 51, and the second ends of the first electrodes 50 may extend to the opposite side
  • the first end of the second electrode 60 can be gathered on one side of the adhesive layer 40 and form a second electrode input portion 61, the second end of the second electrode 60 extends toward the first electrode input portion 51, and the first electrode input
  • the portion 51 and the second electrode input portion 61 are respectively located on both sides of the adhesive layer 40 to facilitate the application of a detection voltage to each first electrode 50 and each second electrode 60.
  • the adhesive layer 40 is provided with elastic metal traces to form the first electrode 50 and the second electrode 60.
  • the adhesive layer 40 is laid on the bottom surface of the entire detection substrate 30 facing the original substrate 10.
  • the adhesive layer 40 has a certain thickness and is made of adhesive glue with certain fluidity, which can be deformed under the action of external force;
  • a certain pressure is applied to the original substrate 10 where the first contact 21 and the second contact 22 are located, and the first contact 21, the second contact 22
  • the contact 22 is pressed against the first electrode 50 and the second electrode 60, the first electrode 50 and the second electrode 60 are recessed into the adhesive layer 40, so that the first contact 21 is connected to the first electrode 50, and the second contact
  • the dot 22 is connected to the second electrode 60, and the non-electrode area 23 provided on the bottom of the micro light emitting diode 20 away from the original substrate 10 is bonded to the adhesive layer 40.
  • the first electrode 50 and the second electrode 60 have a certain degree of elongation, and can be made of a metal material with good ductility, such as aluminum, copper, etc.; multiple metal traces can be arranged laterally along the surface of the bonding layer 40, and A plurality of metal traces are arranged at intervals, and the plurality of metal traces form the first electrode 50 and the second electrode 60, wherein one end of a part of the plurality of metal traces is integrated into the first electrode input portion 51, and the other end extends in the lateral direction; One end of a part of the plurality of metal wires away from the first electrode input portion 51 is integrated into the second electrode input portion 61, and the other end extends toward the first electrode input portion 51.
  • a metal material with good ductility such as aluminum, copper, etc.
  • multiple metal traces can be arranged laterally along the surface of the bonding layer 40, and A plurality of metal traces are arranged at intervals, and the plurality of metal traces form the first electrode 50 and the
  • the above-mentioned first electrode 50 is a P electrode
  • the second electrode 60 is an N electrode
  • a P electrode input terminal and an N electrode input terminal are formed on both sides of the adhesive layer 40, which can be applied to the P electrode input terminal and the N electrode input terminal.
  • the detection voltage can be transmitted to the first contact 21 and the second contact 22 of the micro light emitting diode 20 through the first electrode 50 and the second electrode 60 respectively, and the micro light emitting diode 20 can be detected.
  • a metal-type carbon nanotube film may also be provided on the bonding layer 40 to form the first electrode 50 and the second electrode 60.
  • a metal-type carbon nanotube film is formed on the bottom surface of the bonding layer 40 close to the micro light emitting diode 20 by chemical deposition, and then etching is performed to form the first electrodes 50 and 50 which are distributed on the bonding layer 40.
  • the second electrode 60, and the first electrode input portion 51 is formed on one side of the adhesive layer 40, so that multiple first electrodes 50 can be connected to the first electrode input portion 51; similarly, on the other side of the adhesive layer 40
  • a second electrode input portion 61 is formed on the side, and one end of a plurality of second electrodes 60 can be connected to the second electrode input portion 61.
  • the bonding force between the non-electrode area 23 on one side of the micro light emitting diode 20 and the adhesive layer 40 is smaller than the bonding force between the other side of the micro light emitting diode 20 and the transfer head.
  • the micro light emitting diode 20 that has passed the detection can be transferred to a predetermined position of the receiving substrate using a transfer head and bound, and the micro light emitting diode 20 needs to be connected to the detection substrate 30 is separated, so that the bonding force (adhesive force) formed between the non-electrode area 23 of the micro light emitting diode 20 and the adhesive layer 40 is smaller than that formed between the side of the micro light emitting diode 20 away from the contact and the transfer head.
  • the adsorption force applies an external force to the transfer head to separate the micro light emitting diode 20 from the adhesive layer 40, so that the micro light emitting diode 20 is
  • the present disclosure also provides a method for detecting micro light-emitting diodes, which includes the following steps:
  • Step a the original substrate provided with the micro-light-emitting diode 20 is placed above the adhesive layer 40 of the detection substrate 30, and the first contact 21 of the micro-light-emitting diode 20 is in direct contact with the first electrode 50 provided on the adhesive layer 40.
  • the second contact 22 of the micro light emitting diode 20 and the second electrode 60 arranged on the adhesive layer 40 are arranged directly opposite.
  • the micro-light-emitting diode detection device when used to detect the micro-light-emitting diode 20 formed on the original substrate 10, the original substrate 10 is first moved above the detection substrate 30, and the detection substrate 30 is provided with an adhesive layer 40, And the first electrode 50 and the second electrode 60 are distributed on the adhesive layer 40, so that the first contact 21 and the first electrode 50 of the micro light emitting diode 20 are arranged directly opposite to each other, and the second contact 22 and the second electrode 60 are directly opposite to each other. Set up.
  • Step b press down the original substrate 10 to make the first contact 21 contact the first electrode 50, the second contact 22 contact the second electrode 60, and the non-electrode area 23 of the micro light emitting diode 20 is bonded to the adhesive layer 40 .
  • the original substrate 10 is pressed down so that the first contact 21 and the first electrode 50 are in contact with each other and are electrically connected.
  • the second contact 22 is in contact with the second electrode 60 and is electrically connected.
  • the non-electrode area 23 of the micro light emitting diode 20 away from the bottom of the original substrate 10 is bonded to the adhesive layer 40, which can make the micro light emitting
  • the diode 20 is fixed on the adhesive layer 40 to prevent the micro-light-emitting diode 20 from being damaged due to the weak connection between the micro-light-emitting diode 20 and the adhesive layer 40 when the original substrate 10 and the micro-light-emitting diode 20 are peeled off.
  • Step c peeling off the original substrate 10 to separate the original substrate 10 from the micro light emitting diode 20; specifically, the original substrate 10 and the micro light emitting diode 20 are peeled off using a laser peeling technique to separate the original substrate 10 from the micro light emitting diode 20. Since the damage of the micro light emitting diode 20 is mainly generated during the peeling process of the original substrate 10 and the micro light emitting diode 20, the present embodiment detects the micro light emitting diode 20 after peeling, which can improve the accuracy of detecting the micro light emitting diode 20.
  • step d a detection voltage is applied to the first electrode 50 and the second electrode 60, and the light-emitting brightness of the micro light-emitting diode 20 is observed.
  • the detection voltage can be applied to the first electrode input portion 51 and the second electrode input portion 61 located on both sides of the adhesive layer 40 to observe the micro light-emitting diode 20 If it is qualified, the transfer head is used to transfer to a predetermined position of the receiving substrate, and the micro-LED 20 and the receiving substrate are bound to make a micro-LED display.
  • the photodetector in the process of applying a detection voltage to the first electrode 50 and the second electrode 60 for detection , can be used to detect the optical performance of each micro-light-emitting diode 20 and record the distribution map of the poor micro-light-emitting diode; the transfer head uses the distribution map of the above-mentioned poor micro-light-emitting diode 20 to perform the inspection on the qualified micro-light-emitting diode 20 Transfer.
  • the distribution map of the defective micro-light-emitting diodes 20 can be made using the above-mentioned inspection records, and the corresponding degree of damage should be indicated;
  • the distribution map of the light-emitting diodes 20 reasonably divides the corresponding areas, and the transfer head is used to transfer the defined micro-light-emitting diode 20 array, which improves the transfer efficiency of the micro-light-emitting diode 20.
  • the inspector judges whether it needs to be repaired according to the damage degree of the micro light emitting diode 20, so as to save repair costs and improve repair efficiency.
  • the detection method of micro-light-emitting diodes uses the above-mentioned detection device for detection before the micro-light-emitting diodes are transferred to the receiving substrate, and the transfer head is used to transfer qualified micro-light-emitting diodes to the receiving substrate and bind, which can be effective Avoid transferring poorly displayed micro-light-emitting diodes to the receiving substrate, and reduce the difficulty of repairing the micro-light-emitting display.

Abstract

An inspection device and method for a micro light-emitting diode (20). The inspection device is used for inspecting the micro light-emitting diode (20) provided on an original substrate (10). The bottom part of the micro light-emitting diode (20) away from the original substrate (10) comprises an electrode area and a non-electrode area (23). The electrode area is provided with a first contact (21) and a second contract (22). The inspection device comprises: an inspection substrate (30) and an inspection circuit. A bonding layer (40) is provided on the inspection substrate (30). The bonding layer (40) is used for bonding with the original substrate (10) during a test. The inspection circuit comprises an electrode set provided on the bonding layer (40). The electrode set comprises a first electrode (50) and a second electrode (60). The first electrode (50) is used for contacting the first contact (21) of the micro light-emitting diode (20) during the test. The second electrode (60) is used for contacting the second contact (22) of the micro light-emitting diode (20) during the test. The inspection device and method for the micro light-emitting diode (20) reduce the difficulty of repairing a micro light-emitting diode display.

Description

微发光二极管的检测装置及方法Detection device and method of micro light emitting diode 技术领域Technical field
本公开涉及显示技术领域,尤其涉及一种微发光二极管的检测装置及方法。The present disclosure relates to the field of display technology, and in particular to a detection device and method for micro-light emitting diodes.
背景技术Background technique
微发光二极管显示器是一种在一个原始基板上集成的高密度微小尺寸的LED阵列来实现图像显示的显示器;因其具有高品质、机身薄、耗能低等优点而被广泛应用,成为显示装置中的主流。A micro-light-emitting diode display is a display that integrates a high-density and small-size LED array on a primitive substrate to realize image display; it is widely used because of its high quality, thin body, and low energy consumption. The mainstream in the installation.
在微发光二极管显示器制作过程中,通常需要先在原始基板(如蓝宝石基板)上通过分子外延的方法生长出多个微发光二极管,这些微发光二极管可形成Micro-LED阵列;然后,再通过激光剥离技术将微发光二极管从原始基板上剥离,并使用转印头将微发光二极管转移至接收基板上的预定位置,并与接收基板绑定。In the manufacturing process of micro-light-emitting diode displays, it is usually necessary to grow multiple micro-light-emitting diodes on the original substrate (such as sapphire substrate) by molecular epitaxy. These micro-light-emitting diodes can form a Micro-LED array; The peeling technology peels off the micro light emitting diode from the original substrate, and uses the transfer head to transfer the micro light emitting diode to a predetermined position on the receiving substrate, and binds with the receiving substrate.
不过,微发光二极管与原始基板剥离时容易发生破损,因而,制作完成后需要对微发光二极管显示器的亮度进行检测,一旦发现微发光二极管显示不良,需要对微发光二极管进行修复;但此时微发光二极管显示器制程已完成,增加了微发光二极管显示器的修复难度。However, the micro-light-emitting diode is prone to breakage when it is peeled from the original substrate. Therefore, the brightness of the micro-light-emitting diode display needs to be tested after the production is completed. Once the micro-light-emitting diode display is found to be poor, the micro-light-emitting diode needs to be repaired; The LED display manufacturing process has been completed, which increases the difficulty of repairing the micro LED display.
发明内容Summary of the invention
本公开实施例提供了一种微发光二极管的检测装置及方法,其能够降低微发光二极管显示器的修复难度。The embodiments of the present disclosure provide a detection device and method for micro-light-emitting diodes, which can reduce the difficulty of repairing micro-light-emitting diode displays.
为了实现上述目的,本公开实施例采用如下技术方案:In order to achieve the foregoing objectives, the embodiments of the present disclosure adopt the following technical solutions:
本公开实施例一方面提供了一种微发光二极管的检测装置,用于对设置 在原始基板上的微发光二极管进行检测,所述微发光二极管远离所述原始基板的底部包括电极区域及非电极区域,所述电极区域设置有第一触点和第二触点;所述检测装置包括:检测基板和检测电路,其中:所述检测基板上设置有粘结层,所述粘结层用于测试时与所述微发光二极管的非电极区域粘结;所述检测电路包括设置于所述粘结层上的电极组,所述电极组包括第一电极及第二电极,所述第一电极用于测试时与所述微发光二极管的第一触点接触,所述第二电极用于测试时与所述微发光二极管的第二触点接触。One aspect of the embodiments of the present disclosure provides a detection device for micro-light-emitting diodes, which is used to detect micro-light-emitting diodes arranged on an original substrate. The bottom of the micro-light-emitting diodes away from the original substrate includes electrode regions and non-electrodes. Area, the electrode area is provided with a first contact and a second contact; the detection device includes: a detection substrate and a detection circuit, wherein: the detection substrate is provided with an adhesive layer, and the adhesive layer is used for During testing, it is bonded with the non-electrode area of the micro light-emitting diode; the detection circuit includes an electrode group arranged on the bonding layer, the electrode group includes a first electrode and a second electrode, the first electrode It is used to contact the first contact of the micro light emitting diode during testing, and the second electrode is used to contact the second contact of the micro light emitting diode during testing.
在一个实施方案中,所述粘结层为柔性粘结层,所述第一电极和所述第二电极均为柔性电极;测试时所述微发光二极管嵌入到所述柔性粘结层中,所述第一触点嵌入到所述第一电极中,所述第二触点嵌入到所述第二电极中。In one embodiment, the adhesive layer is a flexible adhesive layer, and the first electrode and the second electrode are both flexible electrodes; the micro light-emitting diode is embedded in the flexible adhesive layer during testing, The first contact is embedded in the first electrode, and the second contact is embedded in the second electrode.
在一个实施方案中,所述粘结层中设置有凹陷区,所述第一电极和所述第二电极设置于所述凹陷区内。In one embodiment, a recessed area is provided in the adhesive layer, and the first electrode and the second electrode are provided in the recessed area.
在一个实施方案中,所述检测电路包括多个电极组,每个电极组包括平行且相对设置的条状的第一电极和条状的第二电极;且多个电极组中的各第一电极相互平行,多个电极组中的各第二电极相互平行。In one embodiment, the detection circuit includes a plurality of electrode groups, and each electrode group includes a strip-shaped first electrode and a strip-shaped second electrode that are arranged in parallel and opposite to each other; and each first electrode in the plurality of electrode groups The electrodes are parallel to each other, and the second electrodes in the plurality of electrode groups are parallel to each other.
在一个实施方案中,所述第一电极和所述第二电极交错间隔分布。In one embodiment, the first electrode and the second electrode are distributed in staggered intervals.
在一个实施方案中,所述第二电极输入部与所述第一电极输入部相对地设置在所述粘结层的两侧。In one embodiment, the second electrode input part and the first electrode input part are disposed on both sides of the adhesive layer opposite to the first electrode input part.
在一个实施方案中,所述检测装置还包括位于各所述第一电极的第一端且与各所述第一电极的第一端连接的第一电极输入部,以及位于各所述第二电极的第一端且与各所述第二电极的第一端连接的第二电极输入部;所述第二电极输入部与第一电极输入部相对设置。In one embodiment, the detection device further includes a first electrode input part located at the first end of each of the first electrodes and connected to the first end of each of the first electrodes, and located at each of the second electrodes. The first end of the electrode and a second electrode input part connected to the first end of each second electrode; the second electrode input part is opposite to the first electrode input part.
在一个实施方案中,所述第二电极输入部与所述第一电极输入部相对地设置在所述粘结层的两侧。In one embodiment, the second electrode input part and the first electrode input part are disposed on both sides of the adhesive layer opposite to the first electrode input part.
在一个实施方案中,所述第一电极和所述第二电极为具有弹性的金属走线。In one embodiment, the first electrode and the second electrode are metal traces with elasticity.
在一个实施方案中,所述第一电极和所述第二电极由金属型碳纳米管膜制成。In one embodiment, the first electrode and the second electrode are made of metal-type carbon nanotube films.
在一个实施方案中,所述第一电极为P电极(Positive Electrode,正极),所述第二电极为N电极(Negative Electrode,负极)。In one embodiment, the first electrode is a P electrode (Positive Electrode, positive electrode), and the second electrode is an N electrode (Negative Electrode, negative electrode).
在一个实施方案中,所述第一电极或所述第二电极由具有弹性的金属走线或金属型碳纳米管膜形成。In one embodiment, the first electrode or the second electrode is formed of a flexible metal trace or a metal carbon nanotube film.
在一个实施方案中,位于所述微发光二极管一侧的所述非电极区域与所述粘结层的结合力小于所述微发光二极管另一侧与转印头之间的结合力。In one embodiment, the binding force between the non-electrode area on one side of the micro light emitting diode and the adhesive layer is less than the binding force between the other side of the micro light emitting diode and the transfer head.
在一个实施方案中,所述检测基板为硬质基板。In one embodiment, the detection substrate is a rigid substrate.
在一个实施方案中,所述粘结层为丙烯酸酯类键合胶层。In one embodiment, the adhesive layer is an acrylic bonding adhesive layer.
在一个实施方案中,所述检测电路设置在所述粘结层远离所述检测基板的一侧。In one embodiment, the detection circuit is arranged on a side of the adhesive layer away from the detection substrate.
本公开实施例中另一方面提供了一种微发光二极管的检测方法,包括以下步骤:将设置有微发光二极管的原始基板置于检测基板的粘结层上方,且所述微发光二极管的第一触点与设置在所述粘结层上的第一电极正对设置,所述微发光二极管的第二触点与设置在所述粘结层上的第二电极正对设置;下压原始基板,使所述第一触点与所述第一电极接触,所述第二触点与所述第二电极接触,所述微发光二极管的非电极区域与所述粘结层粘结;剥离所述原始基板,使所述原始基板与所述微发光二极管分离;对所述第一电极及所述第二电极施加检测电压,并观察所述微发光二极管的发光亮度。Another aspect of the embodiments of the present disclosure provides a method for detecting micro-light-emitting diodes, which includes the following steps: placing an original substrate provided with micro-light-emitting diodes above the bonding layer of the detection substrate, and the second part of the micro-light-emitting diodes A contact is arranged opposite to the first electrode arranged on the adhesive layer, and the second contact of the micro light emitting diode is arranged opposite to the second electrode arranged on the adhesive layer; pressing down the original A substrate, the first contact is in contact with the first electrode, the second contact is in contact with the second electrode, and the non-electrode area of the micro light emitting diode is bonded to the adhesive layer; peeling The original substrate separates the original substrate from the micro light-emitting diode; applies a detection voltage to the first electrode and the second electrode, and observes the light-emitting brightness of the micro light-emitting diode.
在一个实施方案中,所述微发光二极管的检测方法还包括:在对所述第一电极和所述第二电极施加检测电压进行检测的过程中,利用光电探测器对所述微发光二极管的发光亮度进行检测,并生成不良微发光二极管的分布图;基于上述不良微发光二极管的分布图,利用转印头对合格的微发光二极管进行转移。In one embodiment, the detection method of the micro-light-emitting diode further includes: in the process of applying a detection voltage to the first electrode and the second electrode for detection, using a photodetector to detect the micro-light-emitting diode The luminous brightness is detected, and a distribution map of the defective micro-LEDs is generated; based on the above-mentioned distribution of the defective micro-LEDs, the transfer head is used to transfer the qualified micro-LEDs.
与相关技术相比,本公开实施例提供的微发光二极管的检测装置及方法, 具有以下优点;Compared with related technologies, the detection device and method for micro-light-emitting diodes provided by the embodiments of the present disclosure have the following advantages:
本公开提供的微发光二极管的检测装置及方法,其包括检测基板,并在检测基板上设置有粘结层,粘结层上设置有第一电极和第二电极,微发光二极管的第一触点可与第一电极电性连接,微发光二极管的第二触点可与第二电极电性连接,待设置有微发光二极管的非电极区域粘结至粘结层后,将原始基板与微发光二极管进行剥离,对第一电极和第二电极施加检测电压,观察微发光二极管的发光亮度。The micro-light-emitting diode detection device and method provided by the present disclosure include a detection substrate, and an adhesive layer is provided on the detection substrate, and the first electrode and the second electrode are provided on the adhesive layer, and the first contact of the micro-light-emitting diode The dot can be electrically connected to the first electrode, and the second contact of the micro light emitting diode can be electrically connected to the second electrode. After the non-electrode area where the micro light emitting diode is provided is bonded to the adhesive layer, the original substrate and the micro The light-emitting diode is peeled off, a detection voltage is applied to the first electrode and the second electrode, and the light-emitting brightness of the micro light-emitting diode is observed.
本公开提供的微发光二极管的检测装置及方法,在微发光二极管转移至接收基板之前利用上述检测装置对微发光二极管进行检测,并利用转印头将合格的微发光二极管转移至接收基板并绑定,可避免将显示不良的微发光二极管转移至接收基板上,降低微发光二极管显示器的修复难度。The micro-light-emitting diode detection device and method provided in the present disclosure use the above-mentioned detection device to detect the micro-light-emitting diode before the micro-light-emitting diode is transferred to the receiving substrate, and use the transfer head to transfer the qualified micro-light-emitting diode to the receiving substrate and bind it. Therefore, it is possible to avoid transferring the poorly displayed micro-light-emitting diodes to the receiving substrate, and reduce the difficulty of repairing the micro-light-emitting diode display.
除了上面所描述的本公开解决的技术问题、构成技术方案的技术特征以及由这些技术方案的技术特征所带来的有益效果外,本公开提供的微发光二极管的检测装置及方法所能解决的其他技术问题、技术方案中包含的其他技术特征以及这些技术特征带来的有益效果,将在具体实施方式中作出进一步详细的说明。In addition to the above-described technical problems that the present disclosure solves, the technical features that constitute the technical solutions, and the beneficial effects brought by the technical features of these technical solutions, the detection device and method for micro-light-emitting diodes provided by the present disclosure can solve Other technical issues, other technical features included in the technical solution, and beneficial effects brought about by these technical features will be described in further detail in the specific implementation.
附图说明Description of the drawings
图1为相关技术中的原始基板上生成的微发光二极管示意图;FIG. 1 is a schematic diagram of a micro light-emitting diode generated on an original substrate in the related art;
图2为本公开实施例提供的微发光二极管的检测装置的结构示意图一;FIG. 2 is a first structural schematic diagram of a micro light emitting diode detection device provided by an embodiment of the disclosure;
图3为本公开实施例提供的微发光二极管的检测装置的结构示意图二;FIG. 3 is a second structural schematic diagram of a micro-light emitting diode detection device provided by an embodiment of the disclosure;
图4为本公开实施例提供的微发光二极管与检测电路的连接示意图;4 is a schematic diagram of the connection between the micro light emitting diode and the detection circuit provided by the embodiment of the disclosure;
图5为本公开实施例提供的微发光二极管的检测方法的步骤示意图。FIG. 5 is a schematic diagram of the steps of a detection method of a micro light emitting diode provided by an embodiment of the disclosure.
具体实施方式Detailed ways
为了使本公开的上述目的、特征和优点能够更加明显易懂,下面将结合 本公开实施例中的附图,对本公开实施例中的技术方案进行清楚、完整地描述。显然,所描述的实施例仅仅是本公开的一部分实施例,而不是全部的实施例。In order to make the above objectives, features and advantages of the present disclosure more obvious and understandable, the technical solutions in the embodiments of the present disclosure will be described clearly and completely in conjunction with the accompanying drawings in the embodiments of the present disclosure. Obviously, the described embodiments are only a part of the embodiments of the present disclosure, rather than all the embodiments.
如图1所示,相关技术中原始基板10可选用蓝宝石基板、硅基板、碳化硅基板或者氮化镓基板,原始基板10上设置有一个微发光二极管20,或者,原始基板10上设置有多个微发光二极管20;例如,可以在蓝宝石基板上设置有多个微发光二极管20,并且多个微发光二极管20可以形成Micro-LED阵列。为便于将制作好的多个微发光二极管20转移至接收基板,可将多个微发光二极管20分割或划分成多个区域,便于灵活转移。As shown in FIG. 1, in the related art, the original substrate 10 can be a sapphire substrate, a silicon substrate, a silicon carbide substrate or a gallium nitride substrate. The original substrate 10 is provided with a micro light emitting diode 20, or the original substrate 10 is provided with multiple One micro light emitting diode 20; for example, a plurality of micro light emitting diodes 20 may be provided on a sapphire substrate, and the plurality of micro light emitting diodes 20 may form a Micro-LED array. In order to facilitate the transfer of the manufactured plurality of micro light emitting diodes 20 to the receiving substrate, the plurality of micro light emitting diodes 20 may be divided or divided into a plurality of regions, which is convenient for flexible transfer.
其中,微发光二极管20远离原始基板10的底部设置有电极区域及非电极区域23,且电极区域包括第一触点21及第二触点22,第一触点21和第二触点22的制作材料可以为镍、钼、铝、金、铂及钛等金属中的一种或者多种组合;微发光二极管20与接收基板绑定后形成微发光二极管显示器,对制作完成的微发光二极管显示器需进行检测,一旦发现微发光二极管显示不良,需要对微发光二极管进行修复;但此时微发光二极管显示器制程已完成,增加了微发光二极管显示器的检测难度。Wherein, the micro light emitting diode 20 is provided with an electrode area and a non-electrode area 23 at the bottom away from the original substrate 10, and the electrode area includes a first contact 21 and a second contact 22, the first contact 21 and the second contact 22 The manufacturing material can be one or a combination of metals such as nickel, molybdenum, aluminum, gold, platinum, and titanium; the micro-light-emitting diode 20 is bound with the receiving substrate to form a micro-light-emitting diode display, which is useful for the finished micro-light-emitting diode display. It needs to be tested. Once the micro-light-emitting diode is found to be poorly displayed, the micro-light-emitting diode needs to be repaired; but at this time the manufacturing process of the micro-light-emitting diode display has been completed, which increases the difficulty of detection of the micro-light-emitting diode display.
如图2、图3和图4所示,本公开实施例提供的微发光二极管的检测装置,用于对设置在原始基板10上的微发光二极管20进行检测;微发光二极管检测装置包括检测基板30及检测电路,其中,检测基板30为硬质基板,可以采用玻璃基板进行制作。为保证微发光二极管的第一触点21、第二触点22以及非电极区域23稳定地连接至检测基板30上,检测基板30在其朝向原始基板10的一侧表面上设置有粘结层40,可在玻璃基板上设置丙烯酸酯类键合胶层;例如,聚甲基丙烯酸甲酯树酯作为临时键合胶设置在玻璃基板的表面上,且检测电路设置在粘结层40远离检测基板的一侧。As shown in Figures 2, 3 and 4, the micro-light-emitting diode detection device provided by the embodiment of the present disclosure is used to detect the micro-light-emitting diode 20 arranged on the original substrate 10; the micro-light-emitting diode detection device includes a detection substrate 30 and a detection circuit, wherein the detection substrate 30 is a hard substrate and can be manufactured by using a glass substrate. In order to ensure that the first contact 21, the second contact 22 and the non-electrode area 23 of the micro light emitting diode are stably connected to the detection substrate 30, the detection substrate 30 is provided with an adhesive layer on its side surface facing the original substrate 10 40. An acrylic bonding adhesive layer can be provided on the glass substrate; for example, polymethyl methacrylate resin is used as a temporary bonding adhesive to be provided on the surface of the glass substrate, and the detection circuit is provided on the adhesive layer 40 away from the detection One side of the substrate.
其中,检测电路包括至少一组电极组,每组电极组中包括第一电极50和第二电极60,第一电极50和第二电极60可以为设置在粘结层40上的检测 点,且微发光二极管20的第一触点21连接至一检测点上、第二触点22连接至另一检测点上,并对第一触点21和第二触点22所连接的检测点施加检测电压,可对发光二极管的发光亮度进行检测。The detection circuit includes at least one set of electrode groups, and each set of electrode groups includes a first electrode 50 and a second electrode 60. The first electrode 50 and the second electrode 60 may be detection points arranged on the adhesive layer 40, and The first contact 21 of the micro light-emitting diode 20 is connected to a detection point, the second contact 22 is connected to another detection point, and detection is applied to the detection points connected by the first contact 21 and the second contact 22 Voltage, can detect the light-emitting brightness of light-emitting diodes.
由于原始基板10上设置有多个微发光二极管20,且多个微发光二极管20呈阵列分布在原始基板10;为实现一次性可对多个微发光二极管20进行检测,可将每个电极组中的第一电极50和第二电极60平行且相对设置,且第一电极50和第二电极60均为的长条状电极,第一电极50和第二电极60可按行或列间隔设置在检测基板30上。根据多个微发光二极管20在原始基板10上的分布情况,可在检测基板30上设置多组电极组,多组电极组中的第一电极50相互平行设置,多组电极组中的第二电极60相互平行设置。Since a plurality of micro light emitting diodes 20 are provided on the original substrate 10, and the plurality of micro light emitting diodes 20 are distributed on the original substrate 10 in an array; in order to realize that the plurality of micro light emitting diodes 20 can be detected at one time, each electrode group can be The first electrode 50 and the second electrode 60 are arranged in parallel and opposite to each other, and the first electrode 50 and the second electrode 60 are both elongated electrodes. The first electrode 50 and the second electrode 60 can be arranged at intervals of rows or columns. On the detection substrate 30. According to the distribution of the multiple micro-light-emitting diodes 20 on the original substrate 10, multiple electrode groups can be provided on the detection substrate 30. The first electrodes 50 in the multiple electrode groups are arranged parallel to each other, and the second electrode group in the multiple electrode groups The electrodes 60 are arranged parallel to each other.
例如,多个第一电极50可按行分布在粘结层40上,同时,多个第二电极60也可按行分布在粘结层40上;并且第一电极50和第二电极60交错间隔分布,第一电极50和第二电极60之间的间距可根据第一触点21和第二触点22的间距进行调整。另外,多个第一电极50也可按列分布,多个第二电极60也可按列分布。For example, a plurality of first electrodes 50 may be distributed on the adhesive layer 40 in rows, and at the same time, a plurality of second electrodes 60 may also be distributed on the adhesive layer 40 in rows; and the first electrodes 50 and the second electrodes 60 are staggered The interval distribution, the interval between the first electrode 50 and the second electrode 60 can be adjusted according to the interval between the first contact 21 and the second contact 22. In addition, the plurality of first electrodes 50 may also be distributed in columns, and the plurality of second electrodes 60 may also be distributed in columns.
待需要对微发光二极管20进行检测时,首先将设置有微发光二极管的原始基板移至检测基板的上方,并将第一触点21连接在第一电极50上,第二触点22连接在第二电极60上,且微发光二极管20的非电极区域23(包括第一触点21与第二触点22之间的区域)粘结在粘结层40上;再对第一电极50和第二电极60的一端施加检测电压,观察微发光二极管的发光亮度并判断其是否损坏,若微发光二极管的亮度正常,可利用转印头移至接收基板进行进一步制作,可避免将显示不良的微发光二极管转移至接收基板上,降低微发光显示器的修复难度。When the micro light emitting diode 20 needs to be inspected, the original substrate provided with the micro light emitting diode is first moved above the detection substrate, and the first contact 21 is connected to the first electrode 50, and the second contact 22 is connected to On the second electrode 60, and the non-electrode area 23 of the micro light emitting diode 20 (including the area between the first contact 21 and the second contact 22) is bonded on the adhesive layer 40; then the first electrode 50 and A detection voltage is applied to one end of the second electrode 60 to observe the light-emitting brightness of the micro-light-emitting diode and determine whether it is damaged. If the brightness of the micro-light-emitting diode is normal, the transfer head can be moved to the receiving substrate for further production, which can avoid poor display. The micro light emitting diode is transferred to the receiving substrate, which reduces the difficulty of repairing the micro light emitting display.
在上述实施例的基础上,粘结层40为柔性粘结层,第一电极50和第二电极60均为柔性电极;测试时微发光二极管20嵌入到柔性粘结层40中,第一触点21嵌入到第一电极50中,第二触点22嵌入到第二电极60中。On the basis of the above embodiment, the adhesive layer 40 is a flexible adhesive layer, and the first electrode 50 and the second electrode 60 are both flexible electrodes; the micro light emitting diode 20 is embedded in the flexible adhesive layer 40 during the test, and the first touch The dot 21 is embedded in the first electrode 50 and the second contact 22 is embedded in the second electrode 60.
具体的,上述第一电极50和第二电极60形成在粘结层40远离检测基板30的表面上,且第一电极50和第二电极60可以均为柔性电极,即第一电极50和第二电极60具有一定的变形能力。由于粘结层40为柔性粘结层,在第一触点21和第二触点22压向粘结层40时,第一电极50和第二电极60可随着第一触点21和第二触点22朝向粘结层40的内部凹陷,以使第一触点21和第二触点22分别与第一电极50和第二电极60接触。另外,随着第一触点21和第二触点22陷于粘结层40中,可使微发光二极管20远离原始基板10底部的非电极区域23粘结在粘结层40上,将微发光二极管20稳定的连接在粘结层40上,可增强第一电极50与第一触点21以及第二电极60与第二触点22电性连接的稳定性。Specifically, the first electrode 50 and the second electrode 60 described above are formed on the surface of the adhesive layer 40 away from the detection substrate 30, and the first electrode 50 and the second electrode 60 may both be flexible electrodes, that is, the first electrode 50 and the second electrode The second electrode 60 has a certain deformability. Since the adhesive layer 40 is a flexible adhesive layer, when the first contact 21 and the second contact 22 are pressed against the adhesive layer 40, the first electrode 50 and the second electrode 60 can follow the first contact 21 and the second contact. The two contacts 22 are recessed toward the inside of the adhesive layer 40, so that the first contact 21 and the second contact 22 are in contact with the first electrode 50 and the second electrode 60, respectively. In addition, as the first contact 21 and the second contact 22 are trapped in the adhesive layer 40, the non-electrode area 23 at the bottom of the original substrate 10 can be adhered to the adhesive layer 40, so that the micro light-emitting diode 20 can be bonded to the adhesive layer 40. The diode 20 is stably connected to the adhesive layer 40 to enhance the stability of the electrical connection between the first electrode 50 and the first contact 21 and the second electrode 60 and the second contact 22.
在一个实施方案中,还可以在粘结层40上根据微发光二极管20所设置的触点的大小设置有凹陷区,第一电极50和第二电极60设置在凹陷区内,并且第一触点21和第二触点22分别嵌设在凹陷区内,使第一触点21与第一电极50接触,第二触点22与第二电极60接触。待第一触点21及第二触点22嵌设在凹陷区内,且微发光二极管的非电极区域23可粘结在粘结层40的表面上。本实施例优选方案,在柔性的粘结层40上布置有柔性的第一电极50和第二电极60,可便于对不同形状的微发光二极管20的触点进行连接,可使微发光二极管20稳固的连接在检测基板30上,使两者之间具有良好的导电性,可提升微发光二极管检测装置的稳定性。In one embodiment, a recessed area may be provided on the adhesive layer 40 according to the size of the contact provided by the micro light emitting diode 20, the first electrode 50 and the second electrode 60 are provided in the recessed area, and the first contact The point 21 and the second contact 22 are respectively embedded in the recessed area, so that the first contact 21 is in contact with the first electrode 50 and the second contact 22 is in contact with the second electrode 60. The first contact 21 and the second contact 22 are to be embedded in the recessed area, and the non-electrode area 23 of the micro light emitting diode can be bonded on the surface of the adhesive layer 40. In the preferred solution of the present embodiment, the flexible first electrode 50 and the second electrode 60 are arranged on the flexible adhesive layer 40, which can facilitate the connection of the contacts of the micro light emitting diode 20 of different shapes, so that the micro light emitting diode 20 can be connected. It is firmly connected to the detection substrate 30, so that there is good conductivity between the two, and the stability of the micro-light-emitting diode detection device can be improved.
在上述实施例的基础上,多个第一电极50的第一端可在粘结层40的一侧汇集并形成第一电极输入部51,第一电极50的第二端可延伸至相对侧;第二电极60的第一端可在粘结层40的一侧汇集并形成第二电极输入部61,第二电极60的第二端朝向第一电极输入部51延伸,且第一电极输入部51和第二电极输入部61分别位于粘结层40的两侧,便于对各第一电极50和各第二电极60进行施加检测电压。On the basis of the foregoing embodiment, the first ends of the plurality of first electrodes 50 may be gathered on one side of the adhesive layer 40 to form the first electrode input portion 51, and the second ends of the first electrodes 50 may extend to the opposite side The first end of the second electrode 60 can be gathered on one side of the adhesive layer 40 and form a second electrode input portion 61, the second end of the second electrode 60 extends toward the first electrode input portion 51, and the first electrode input The portion 51 and the second electrode input portion 61 are respectively located on both sides of the adhesive layer 40 to facilitate the application of a detection voltage to each first electrode 50 and each second electrode 60.
本实施例中的粘结层40上设置有具有弹性的金属走线以形成第一电极 50和第二电极60。具体的,粘结层40敷设在整个检测基板30朝向原始基板10的底面上,粘结层40具有一定厚度,且采用具有一定流动性的粘结胶制成,在外力作用下可发生形变;待第一触点21和第二触点22连接至检测基板30时,朝向第一触点21、第二触点22所在的原始基板10施加一定压力,并使第一触点21、第二触点22压向第一电极50及第二电极60时,第一电极50和第二电极60向粘结层40内部凹陷,使第一触点21连接在第一电极50上,第二触点22连接在第二电极60上,同时设置在微发光二极管20远离原始基板10的底部上的非电极区域23粘结在粘结层40上。In this embodiment, the adhesive layer 40 is provided with elastic metal traces to form the first electrode 50 and the second electrode 60. Specifically, the adhesive layer 40 is laid on the bottom surface of the entire detection substrate 30 facing the original substrate 10. The adhesive layer 40 has a certain thickness and is made of adhesive glue with certain fluidity, which can be deformed under the action of external force; When the first contact 21 and the second contact 22 are connected to the detection substrate 30, a certain pressure is applied to the original substrate 10 where the first contact 21 and the second contact 22 are located, and the first contact 21, the second contact 22 When the contact 22 is pressed against the first electrode 50 and the second electrode 60, the first electrode 50 and the second electrode 60 are recessed into the adhesive layer 40, so that the first contact 21 is connected to the first electrode 50, and the second contact The dot 22 is connected to the second electrode 60, and the non-electrode area 23 provided on the bottom of the micro light emitting diode 20 away from the original substrate 10 is bonded to the adhesive layer 40.
第一电极50和第二电极60具有一定的延伸率,可采用延展性较好的金属材料制作,例如,铝、铜等;可沿粘结层40表面的横向设置多条金属走线,且多条金属走线间隔设置,多条金属走线形成第一电极50和第二电极60,其中,部分多条金属走线的一端汇集成第一电极输入部51,另一端沿横向延伸;剩余部分的多条金属走线远离第一电极输入部51的一端汇集成第二电极输入部61,且另一端朝向第一电极输入部51延伸。The first electrode 50 and the second electrode 60 have a certain degree of elongation, and can be made of a metal material with good ductility, such as aluminum, copper, etc.; multiple metal traces can be arranged laterally along the surface of the bonding layer 40, and A plurality of metal traces are arranged at intervals, and the plurality of metal traces form the first electrode 50 and the second electrode 60, wherein one end of a part of the plurality of metal traces is integrated into the first electrode input portion 51, and the other end extends in the lateral direction; One end of a part of the plurality of metal wires away from the first electrode input portion 51 is integrated into the second electrode input portion 61, and the other end extends toward the first electrode input portion 51.
上述第一电极50为P电极,第二电极60为N电极,并在粘结层40的两侧分别形成P电极输入端和N电极输入端,可对P电极输入端和N电极输入端施加检测电压,检测电压可分别通过第一电极50和第二电极60传输至微发光二极管20的第一触点21和第二触点22上,并对微发光二极管20进行检测。The above-mentioned first electrode 50 is a P electrode, and the second electrode 60 is an N electrode. A P electrode input terminal and an N electrode input terminal are formed on both sides of the adhesive layer 40, which can be applied to the P electrode input terminal and the N electrode input terminal. The detection voltage can be transmitted to the first contact 21 and the second contact 22 of the micro light emitting diode 20 through the first electrode 50 and the second electrode 60 respectively, and the micro light emitting diode 20 can be detected.
本实施例中,还可在粘结层40上设置有金属型碳纳米管膜以形成第一电极50和第二电极60。具体的,在粘结层40靠近微发光二极管20的底面上通过化学沉积在其表面形成金属型碳纳米管膜,再经刻蚀形成呈行分布在粘结层40上的第一电极50和第二电极60,且在粘结层40的一侧形成第一电极输入部51,可使多条第一电极50连接在第一电极输入部51;同样的,在粘结层40的另一侧形成第二电极输入部61,可使多条第二电极60的一端连接在第二电极输入部61。In this embodiment, a metal-type carbon nanotube film may also be provided on the bonding layer 40 to form the first electrode 50 and the second electrode 60. Specifically, a metal-type carbon nanotube film is formed on the bottom surface of the bonding layer 40 close to the micro light emitting diode 20 by chemical deposition, and then etching is performed to form the first electrodes 50 and 50 which are distributed on the bonding layer 40. The second electrode 60, and the first electrode input portion 51 is formed on one side of the adhesive layer 40, so that multiple first electrodes 50 can be connected to the first electrode input portion 51; similarly, on the other side of the adhesive layer 40 A second electrode input portion 61 is formed on the side, and one end of a plurality of second electrodes 60 can be connected to the second electrode input portion 61.
本实施例中,位于微发光二极管20一侧的非电极区域23与粘结层40的结合力小于微发光二极管20另一侧与转印头之间的结合力。具体的,待微发光二极管20连接至检测基板30并检测完毕,可将检测合格的微发光二极管20利用转印头转移至接收基板的预定位置并绑定,需要将微发光二极管20与检测基板30进行分离,可使微发光二极管20的非电极区域23与粘结层40之间形成的结合力(粘结力)小于微发光二极管20远离触点的一侧与转印头之间形成的吸附力,对转印头施加外力,可将微发光二极管20与粘结层40分离,使微发光二极管20吸附在转印头上并转移,例如转移至接收基板上。In this embodiment, the bonding force between the non-electrode area 23 on one side of the micro light emitting diode 20 and the adhesive layer 40 is smaller than the bonding force between the other side of the micro light emitting diode 20 and the transfer head. Specifically, after the micro light emitting diode 20 is connected to the detection substrate 30 and the detection is completed, the micro light emitting diode 20 that has passed the detection can be transferred to a predetermined position of the receiving substrate using a transfer head and bound, and the micro light emitting diode 20 needs to be connected to the detection substrate 30 is separated, so that the bonding force (adhesive force) formed between the non-electrode area 23 of the micro light emitting diode 20 and the adhesive layer 40 is smaller than that formed between the side of the micro light emitting diode 20 away from the contact and the transfer head. The adsorption force applies an external force to the transfer head to separate the micro light emitting diode 20 from the adhesive layer 40, so that the micro light emitting diode 20 is adsorbed on the transfer head and transferred, for example, to a receiving substrate.
如图5所示,基于上述实施例本公开还提供了一种微发光二极管的检测方法,包括以下步骤;As shown in FIG. 5, based on the above-mentioned embodiments, the present disclosure also provides a method for detecting micro light-emitting diodes, which includes the following steps:
步骤a,将设置有微发光二极管20的原始基板置于检测基板30的粘结层40上方,且微发光二极管20的第一触点21与设置在粘结层40上的第一电极50正对设置,微发光二极管20的第二触点22与设置在粘结层40上的第二电极60正对设置。具体的,在使用微发光二极管检测装置对形成在原始基板10上的微发光二极管20进行检测时,首先将原始基板10移向检测基板30的上方,检测基板30上设置有粘结层40,且粘结层40上分布有第一电极50和第二电极60,使微发光二极管20的第一触点21与第一电极50正对设置,第二触点22与第二电极60正对设置。Step a, the original substrate provided with the micro-light-emitting diode 20 is placed above the adhesive layer 40 of the detection substrate 30, and the first contact 21 of the micro-light-emitting diode 20 is in direct contact with the first electrode 50 provided on the adhesive layer 40. In the opposite arrangement, the second contact 22 of the micro light emitting diode 20 and the second electrode 60 arranged on the adhesive layer 40 are arranged directly opposite. Specifically, when the micro-light-emitting diode detection device is used to detect the micro-light-emitting diode 20 formed on the original substrate 10, the original substrate 10 is first moved above the detection substrate 30, and the detection substrate 30 is provided with an adhesive layer 40, And the first electrode 50 and the second electrode 60 are distributed on the adhesive layer 40, so that the first contact 21 and the first electrode 50 of the micro light emitting diode 20 are arranged directly opposite to each other, and the second contact 22 and the second electrode 60 are directly opposite to each other. Set up.
步骤b,下压原始基板10,使第一触点21与第一电极50接触,第二触点22与第二电极60接触,微发光二极管20的非电极区域23粘结至粘结层40。具体的,在第一触点21和第二触点22分别与第一电极50和第二电极60对位后,下压原始基板10,使第一触点21与第一电极50接触并电性导通,第二触点22与第二电极60接触并电性导通,同时,微发光二极管20远离原始基板10底部的非电极区域23粘结在粘结层40上,可将微发光二极管20固定在粘结层40上,以防止在将原始基板10与微发光二极管20进行剥离时, 由于微发光二极管20与粘结层40连接不牢而导致微发光二极管20破损的现象发生。Step b, press down the original substrate 10 to make the first contact 21 contact the first electrode 50, the second contact 22 contact the second electrode 60, and the non-electrode area 23 of the micro light emitting diode 20 is bonded to the adhesive layer 40 . Specifically, after the first contact 21 and the second contact 22 are aligned with the first electrode 50 and the second electrode 60, respectively, the original substrate 10 is pressed down so that the first contact 21 and the first electrode 50 are in contact with each other and are electrically connected. The second contact 22 is in contact with the second electrode 60 and is electrically connected. At the same time, the non-electrode area 23 of the micro light emitting diode 20 away from the bottom of the original substrate 10 is bonded to the adhesive layer 40, which can make the micro light emitting The diode 20 is fixed on the adhesive layer 40 to prevent the micro-light-emitting diode 20 from being damaged due to the weak connection between the micro-light-emitting diode 20 and the adhesive layer 40 when the original substrate 10 and the micro-light-emitting diode 20 are peeled off.
步骤c,剥离原始基板10,使原始基板10与微发光二极管20分离;具体的,利用激光剥离技术对原始基板10和微发光二极管20进行剥离,以使原始基板10与微发光二极管20分离。由于微发光二极管20的破损主要是在原始基板10和微发光二极管20剥离过程中产生,本实施例对剥离之后的微发光二极管20进行检测,可提升对微发光二极管20检测的准确性。Step c: peeling off the original substrate 10 to separate the original substrate 10 from the micro light emitting diode 20; specifically, the original substrate 10 and the micro light emitting diode 20 are peeled off using a laser peeling technique to separate the original substrate 10 from the micro light emitting diode 20. Since the damage of the micro light emitting diode 20 is mainly generated during the peeling process of the original substrate 10 and the micro light emitting diode 20, the present embodiment detects the micro light emitting diode 20 after peeling, which can improve the accuracy of detecting the micro light emitting diode 20.
步骤d,对第一电极50及第二电极60施加检测电压,并观察微发光二极管20的发光亮度。具体的,对剥离后的微发光二极管20的发光亮度进行检测,可对位于粘结层40两侧的第一电极输入部51和第二电极输入部61施加检测电压,以观察微发光二极管20的发光亮度,并判断微发光二极管20是否合格,若合格则利用转印头转移至接收基板的预定位置,并将微发光二极管20与接收基板绑定制作成微发光二极管显示器。In step d, a detection voltage is applied to the first electrode 50 and the second electrode 60, and the light-emitting brightness of the micro light-emitting diode 20 is observed. Specifically, the light-emitting brightness of the micro light-emitting diode 20 after peeling is detected, and the detection voltage can be applied to the first electrode input portion 51 and the second electrode input portion 61 located on both sides of the adhesive layer 40 to observe the micro light-emitting diode 20 If it is qualified, the transfer head is used to transfer to a predetermined position of the receiving substrate, and the micro-LED 20 and the receiving substrate are bound to make a micro-LED display.
在上述实施例的基础上,为提升对微发光二极管20的修复效率以及微发光二极管20转移效率,本实施例中,在对第一电极50和第二电极60施加检测电压进行检测的过程中,可利用光电探测器检测每个微发光二极管20的光学性能并记录不良的微发光二极管的分布图;转印头利用上述不良的微发光二极管20的分布图,对合格的微发光二极管20进行转移。On the basis of the above embodiment, in order to improve the repair efficiency of the micro light emitting diode 20 and the transfer efficiency of the micro light emitting diode 20, in this embodiment, in the process of applying a detection voltage to the first electrode 50 and the second electrode 60 for detection , The photodetector can be used to detect the optical performance of each micro-light-emitting diode 20 and record the distribution map of the poor micro-light-emitting diode; the transfer head uses the distribution map of the above-mentioned poor micro-light-emitting diode 20 to perform the inspection on the qualified micro-light-emitting diode 20 Transfer.
具体的,在对微发光二极管20的发光亮度判断过程中,单纯的依靠检测人员识别其亮与不亮或者正常发光强度,存在一定的判断误差,对破损较小的微发光二极管20而言,无法通过上述现象进行直观的判断,因此需要利用光电检测探测器对微发光二极管20进行检测,通过检测的光线波长等光学性能以判断微发光二极管20的破损程度并进行记录。Specifically, in the process of judging the light-emitting brightness of the micro-light-emitting diode 20, there is a certain judgment error by simply relying on the inspector to identify whether it is bright or not or the normal light-emitting intensity. For the micro-light-emitting diode 20 with less damage, It is impossible to make an intuitive judgment based on the above phenomenon. Therefore, it is necessary to use a photodetector to detect the micro light emitting diode 20, and use the detected light wavelength and other optical properties to determine the damage degree of the micro light emitting diode 20 and record it.
为便于对破损微发光二极管20进行修复以及对合格的微发光二极管20进行转移,可利用上述检测记录制作不良微发光二极管20的分布图,并注明相应的破损程度;检测人员根据上述不良微发光二极管20的分布图合理划分 出相应区域,利用转印头将划定好的微发光二极管20阵列进行转移,提高了微发光二极管20的转移效率。另外,检测人员根据微发光二极管20的破损程度判断是否需要进行修复,以节省修复成本及提高修复效率。In order to facilitate the repair of the damaged micro-light-emitting diodes 20 and the transfer of the qualified micro-light-emitting diodes 20, the distribution map of the defective micro-light-emitting diodes 20 can be made using the above-mentioned inspection records, and the corresponding degree of damage should be indicated; The distribution map of the light-emitting diodes 20 reasonably divides the corresponding areas, and the transfer head is used to transfer the defined micro-light-emitting diode 20 array, which improves the transfer efficiency of the micro-light-emitting diode 20. In addition, the inspector judges whether it needs to be repaired according to the damage degree of the micro light emitting diode 20, so as to save repair costs and improve repair efficiency.
本公开实施例提供的微发光二极管的检测方法,在微发光二极管转移至接收基板之前利用上述检测装置进行检测,并利用转印头将合格的微发光二极管转移至接收基板并绑定,可有效避免将显示不良的微发光二极管转移至接收基板上,并降低微发光显示器的修复难度。The detection method of micro-light-emitting diodes provided by the embodiments of the present disclosure uses the above-mentioned detection device for detection before the micro-light-emitting diodes are transferred to the receiving substrate, and the transfer head is used to transfer qualified micro-light-emitting diodes to the receiving substrate and bind, which can be effective Avoid transferring poorly displayed micro-light-emitting diodes to the receiving substrate, and reduce the difficulty of repairing the micro-light-emitting display.

Claims (18)

  1. 一种微发光二极管的检测装置,用于对设置在原始基板上的微发光二极管进行检测,所述微发光二极管远离所述原始基板的底部包括电极区域及非电极区域,所述电极区域设置有第一触点和第二触点;其中,所述检测装置包括:A detection device for micro-light-emitting diodes is used to detect micro-light-emitting diodes arranged on an original substrate. The bottom of the micro-light-emitting diodes away from the original substrate includes an electrode area and a non-electrode area, and the electrode area is provided with The first contact and the second contact; wherein, the detection device includes:
    检测基板,所述检测基板上设置有粘结层,所述粘结层用于测试时与所述微发光二极管的非电极区域粘结;A detection substrate, wherein an adhesive layer is provided on the detection substrate, and the adhesive layer is used for bonding with the non-electrode area of the micro light-emitting diode during testing;
    检测电路,所述检测电路包括设置于所述粘结层上的电极组,所述电极组包括第一电极及第二电极,所述第一电极用于测试时与所述微发光二极管的第一触点接触,所述第二电极用于测试时与所述微发光二极管的第二触点接触。A detection circuit, the detection circuit includes an electrode group disposed on the adhesive layer, the electrode group includes a first electrode and a second electrode, and the first electrode is used to interact with the first electrode of the micro light-emitting diode during testing. A contact contact, and the second electrode is used to contact the second contact of the micro light-emitting diode during testing.
  2. 根据权利要求1所述的检测装置,其中,所述粘结层为柔性粘结层,所述第一电极和所述第二电极均为柔性电极。The detection device according to claim 1, wherein the adhesive layer is a flexible adhesive layer, and the first electrode and the second electrode are both flexible electrodes.
  3. 根据权利要求1所述的检测装置,其中,测试时,所述微发光二极管嵌入到所述柔性粘结层中,所述第一触点嵌入到所述第一电极中,所述第二触点嵌入到所述第二电极中。The detection device according to claim 1, wherein, during testing, the micro light emitting diode is embedded in the flexible adhesive layer, the first contact is embedded in the first electrode, and the second contact is The dots are embedded in the second electrode.
  4. 根据权利要求1所述的检测装置,其中,所述粘结层中设置有凹陷区,所述第一电极和所述第二电极设置于所述凹陷区内。The detection device according to claim 1, wherein a recessed area is provided in the adhesive layer, and the first electrode and the second electrode are provided in the recessed area.
  5. 根据权利要求1所述的检测装置,其中,所述检测电路包括多个电极组,每个电极组包括平行且相对设置的条状的第一电极和条状的第二电极;The detection device according to claim 1, wherein the detection circuit comprises a plurality of electrode groups, each electrode group comprises a strip-shaped first electrode and a strip-shaped second electrode arranged in parallel and opposite to each other;
    且多个电极组中的各第一电极相互平行,多个电极组中的各第二电极相互平行。In addition, the first electrodes in the plurality of electrode groups are parallel to each other, and the second electrodes in the plurality of electrode groups are parallel to each other.
  6. 根据权利要求5所述的检测装置,其中,所述第一电极和所述第二电极交错间隔分布。The detection device according to claim 5, wherein the first electrode and the second electrode are distributed alternately and spaced apart.
  7. 根据权利要求6所述的检测装置,其中,所述检测装置还包括位于各 所述第一电极的第一端且与各所述第一电极的第一端连接的第一电极输入部,以及位于各所述第二电极的第一端且与各所述第二电极的第一端连接的第二电极输入部;7. The detection device according to claim 6, wherein the detection device further comprises a first electrode input part located at the first end of each of the first electrodes and connected to the first end of each of the first electrodes, and A second electrode input part located at the first end of each of the second electrodes and connected to the first end of each of the second electrodes;
    所述第二电极输入部与所述第一电极输入部相对设置。The second electrode input part is arranged opposite to the first electrode input part.
  8. 根据权利要求7所述的检测装置,其中,所述第二电极输入部与所述第一电极输入部相对地设置在所述粘结层的两侧。7. The detection device according to claim 7, wherein the second electrode input portion and the first electrode input portion are disposed on both sides of the adhesive layer opposite to the first electrode input portion.
  9. 根据权利要求1所述的检测装置,其中,所述第一电极和所述第二电极为具有弹性的金属走线。The detection device according to claim 1, wherein the first electrode and the second electrode are metal wires with elasticity.
  10. 根据权利要求1所述的检测装置,其中,所述第一电极和所述第二电极由金属型碳纳米管膜制成。The detection device according to claim 1, wherein the first electrode and the second electrode are made of a metal-type carbon nanotube film.
  11. 根据权利要求1所述的检测装置,其中,所述第一电极为正极,所述第二电极为负极。The detection device according to claim 1, wherein the first electrode is a positive electrode, and the second electrode is a negative electrode.
  12. 根据权利要求1所述的检测装置,其中,所述第一电极或所述第二电极由具有弹性的金属走线或金属型碳纳米管膜形成。The detection device according to claim 1, wherein the first electrode or the second electrode is formed of a flexible metal trace or a metal carbon nanotube film.
  13. 根据权利要求1所述的检测装置,其中,位于所述微发光二极管一侧的所述非电极区域与所述粘结层的结合力小于所述微发光二极管另一侧与转印头之间的结合力。The detection device according to claim 1, wherein the bonding force between the non-electrode area on one side of the micro light emitting diode and the adhesive layer is smaller than that between the other side of the micro light emitting diode and the transfer head. The binding power.
  14. 根据权利要求1所述的检测装置,其中,所述检测基板为硬质基板。The detection device according to claim 1, wherein the detection substrate is a rigid substrate.
  15. 根据权利要求1所述的检测装置,其中,所述粘结层为丙烯酸酯类键合胶层。The detection device according to claim 1, wherein the adhesive layer is an acrylic bonding adhesive layer.
  16. 根据权利要求1所述的检测装置,其中,所述检测电路设置在所述粘结层远离所述检测基板的一侧。The detection device according to claim 1, wherein the detection circuit is provided on a side of the adhesive layer away from the detection substrate.
  17. 一种微发光二极管的检测方法,包括以下步骤:A method for detecting micro-light-emitting diodes includes the following steps:
    将设置有微发光二极管的原始基板置于检测基板的粘结层上方,且所述微发光二极管的第一触点与设置在所述粘结层上的第一电极正对设置,所述微发光二极管的第二触点与设置在所述粘结层上的第二电极正对设置;The original substrate provided with the micro-light-emitting diode is placed above the bonding layer of the detection substrate, and the first contact of the micro-light-emitting diode and the first electrode provided on the bonding layer are arranged directly opposite to each other. The second contact of the light emitting diode and the second electrode arranged on the adhesive layer are arranged directly opposite;
    下压原始基板,使所述第一触点与所述第一电极接触,所述第二触点与所述第二电极接触,所述微发光二极管的非电极区域与所述粘结层粘结;The original substrate is pressed down, the first contact is in contact with the first electrode, the second contact is in contact with the second electrode, and the non-electrode area of the micro light-emitting diode is adhered to the adhesive layer. Knot
    剥离所述原始基板,使所述原始基板与所述微发光二极管分离;Peeling off the original substrate to separate the original substrate from the micro light emitting diode;
    对所述第一电极及所述第二电极施加检测电压,并观察所述微发光二极管的发光亮度。A detection voltage is applied to the first electrode and the second electrode, and the light-emitting brightness of the micro light-emitting diode is observed.
  18. 根据权利要求17所述的检测方法,其中,所述微发光二极管的检测方法还包括:The detection method according to claim 17, wherein the detection method of the micro light-emitting diode further comprises:
    在对所述第一电极和所述第二电极施加检测电压进行检测的过程中,利用光电探测器对所述微发光二极管的发光亮度进行检测,并生成不良微发光二极管的分布图;In the process of applying a detection voltage to the first electrode and the second electrode for detection, a photodetector is used to detect the light-emitting brightness of the micro light-emitting diode, and a distribution map of the bad micro light-emitting diode is generated;
    基于上述不良微发光二极管的分布图,利用转印头对合格的微发光二极管进行转移。Based on the above-mentioned distribution map of the defective micro-light-emitting diodes, the transfer head is used to transfer the qualified micro-light-emitting diodes.
PCT/CN2020/095334 2019-10-12 2020-06-10 Inspection device and method for micro light-emitting diode WO2021068539A1 (en)

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Publication number Priority date Publication date Assignee Title
CN113284991A (en) * 2021-07-09 2021-08-20 苏州芯聚半导体有限公司 Micro LED chip, packaging method thereof and electronic device
JP7101924B1 (en) * 2021-08-31 2022-07-15 信越エンジニアリング株式会社 Energization inspection device and energization inspection method
CN113782480A (en) * 2021-09-08 2021-12-10 上海天马微电子有限公司 Substrate and micro light emitting diode transfer method
CN116705639A (en) * 2023-06-27 2023-09-05 惠科股份有限公司 Micro light emitting diode assembly, detection method thereof and micro display substrate

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN201408245Y (en) * 2009-04-08 2010-02-17 扬州扬杰电子科技有限公司 Detection device for patch type diode
US20170296819A1 (en) * 2014-06-30 2017-10-19 Long-Sheng Fan Methods and apparatuses for configuring artificial retina devices
CN108428638A (en) * 2018-02-12 2018-08-21 友达光电股份有限公司 Detection method of light emitting diode
CN109377922A (en) * 2018-09-26 2019-02-22 京东方科技集团股份有限公司 Wireline inspection jig and method for micro- light emitting diode base plate
CN208795818U (en) * 2018-09-28 2019-04-26 王建珍 A kind of detection device of electronic diode
CN110265348A (en) * 2019-06-17 2019-09-20 上海天马微电子有限公司 A kind of conveyer method and transloading equipment for transporting substrate, light emitting diode

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3500834B2 (en) * 1996-02-29 2004-02-23 株式会社デンソー Semiconductor test equipment
JP2007101373A (en) * 2005-10-05 2007-04-19 Renesas Technology Corp Probe sheet bonding holder, probe card, semiconductor inspection device, and method of manufacturing semiconductor device
JP5377279B2 (en) * 2009-12-28 2013-12-25 株式会社ジャパンディスプレイ Capacitance type input device and electro-optical device with input function
CN103558538B (en) * 2013-07-31 2016-08-10 深圳清华大学研究院 Light-emitting diode detection device
US9842782B2 (en) * 2016-03-25 2017-12-12 Mikro Mesa Technology Co., Ltd. Intermediate structure for transfer, method for preparing micro-device for transfer, and method for processing array of semiconductor device
CN107170773B (en) * 2017-05-23 2019-09-17 深圳市华星光电技术有限公司 Micro- LED display panel and preparation method thereof
US10901027B2 (en) * 2017-07-12 2021-01-26 Facebook Technologies, Llc Substrate for mounting light emitting diodes with testing capabilities
CN109920812B (en) * 2017-12-13 2022-05-06 群创光电股份有限公司 Electronic device and method for manufacturing the same
US20190181122A1 (en) * 2017-12-13 2019-06-13 Innolux Corporation Electronic device and method of manufacturing the same
CN108987426B (en) * 2018-07-23 2020-09-29 上海天马微电子有限公司 Flexible LED display panel and electronic equipment

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN201408245Y (en) * 2009-04-08 2010-02-17 扬州扬杰电子科技有限公司 Detection device for patch type diode
US20170296819A1 (en) * 2014-06-30 2017-10-19 Long-Sheng Fan Methods and apparatuses for configuring artificial retina devices
CN108428638A (en) * 2018-02-12 2018-08-21 友达光电股份有限公司 Detection method of light emitting diode
CN109377922A (en) * 2018-09-26 2019-02-22 京东方科技集团股份有限公司 Wireline inspection jig and method for micro- light emitting diode base plate
CN208795818U (en) * 2018-09-28 2019-04-26 王建珍 A kind of detection device of electronic diode
CN110265348A (en) * 2019-06-17 2019-09-20 上海天马微电子有限公司 A kind of conveyer method and transloading equipment for transporting substrate, light emitting diode

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