TWI416642B - With double-sided electrode semiconductor grain detection method and testing machine - Google Patents

Abstract

This invention provides a detection method and detection platform of a semiconductor chip that has a double-sided electrode. The platform comprises: a carrying device, a conducting base, an acupressure assembly, and a processing device. A conductive adhesive layer of a metal conducting film that is formed at the carrying device is provided to electrically connect to and adhere to a semiconductor chip that has double-sided electrode. This design allows a cut out chip to be tested and categorized by connecting to the acupressure assembly.

Description

Double-sided electrode semiconductor die detecting method and detecting machine

The present invention relates to a semiconductor die detecting method, and more particularly to a semiconductor die detecting method having a double-sided electrode and the detecting machine.

Light-emitting diodes (LEDs) are increasingly used in display backlights, signage, hand-held lighting devices, and instrument indicators, or signal lights, and the brightness of individual components is gradually increasing, and the chances of individual components being used alone are greatly increased. . In the past, the common manufacturing method is as shown in FIG. 1. The two electrodes 81 of the LED die 80 are formed on a single side. In the manufacturing and testing process, the wafers of the entire layout are firstly thundered. The shot is partially cut and placed in a piece of plastic film for carrying under the condition that the dies are kept in contact with each other, so that the wafer and the plastic film are closely adhered.

Then, due to the good ductility of the plastic film, when the plastic film 12 is stretched and stretched to the frame 13 as shown in FIG. 2, the entire wafer 8 originally attached to the plastic film will be cut by the respective portions. Disconnecting causes all of the dies 80 to be separated from each other and temporarily attached to the plastic film 12, becoming a common single measured state. During the test, as shown in FIG. 3, two sets of acupressure assemblies 14 are respectively enabled to respectively align the LED dies on the same side of the two electrodes, so that the single LED dies are illuminated, and the illuminance is sensed. Information such as the distribution of the light field to determine the quality of the LED die.

In order to meet different needs, semiconductor dies have different designs; for example, the currently common high-brightness LED dies, in order to effectively increase the area of the illuminating surface, the illuminating side has only a single uniform energy electrode, and the grounding electrode is disposed on the illuminating surface. On the opposite side, and in the wafer state, the ground electrodes of the respective crystal grains that have not been separated are electrically connected to each other. Therefore, in the test, as shown in FIG. 4, the whole wafer is placed on a single conductive pedestal 15, and all the ground electrodes are connected by the conductive pedestal 15 as a common ground, and for example, a single acupressure assembly. 14 each of the grains 90 is uniformly aligned, and the respective grains 90 are cut and separated after the detection is completed. For convenience of explanation, the crystal grains 90 which are hereinafter referred to as two opposite electrode sides of the ground electrode and the enable electrode are double-sided electrode semiconductor crystal grains.

Unfortunately, due to the gradual enhancement of the luminescence intensity of a single crystal grain, the accuracy of the luminescence intensity has become a topic of concern. Even a slight deviation in the dicing process causes the grain on both sides of the dicing deviation to be non-luminous. The expected increase or decrease causes the luminescence intensity to be too large or too small to detract from its value. How to confirm the luminous intensity of each crystal grain and correctly classify it so that the specifications of the factory products are the same, it becomes the only way to improve the competitiveness and price of the product.

After the double-sided electrode die is placed on the plastic film and the plastic film is stretched to separate the crystal grains from each other, since one of the ground electrode and the enable electrode is necessarily flat on the non-conductive plastic film, The guide pin punctures the blue film to contact the bottom electrode (which is carried by the plastic film). The high temperature generated during the conduction causes the blue film to melt at about 60 degrees. Therefore, on the one hand, the conductive substrate cannot be used as the whole wafer. The light is connected to the common grounding electrode, and the single-needle pressure component is connected to the enabling electrode to cause the light to be measured; nor can the two pinch components on the same side be illuminated. That is to say, according to the prior art, such a semiconductor die having a double-sided electrode does not have an appropriate automated detection method after separation.

As described above, if the detection method and the inspection machine which are substantially compatible with the prior art can be utilized for detecting the separated crystal grains, the electrical properties of the crystal grains can be accurately measured, and the product quality is improved.

SUMMARY OF THE INVENTION An object of the present invention is to provide a method for detecting a double-sided electrode semiconductor die which can be electrically connected to each other without being electrically connected after cutting and separating.

Another object of the present invention is to provide a double-sided electrode semiconductor die inspection machine for a carrier having good electrical conductivity and thermal conductivity.

It is still another object of the present invention to provide a double-sided electrode semiconductor die inspection machine that can stably fix a die to be tested.

The invention relates to a method for detecting a double-sided electrode semiconductor die, comprising the steps of: a) providing a set of carrying devices having a metal conductive film and a conductive adhesive layer formed on the metal conductive film; b) double-sided One of the electrodes is electrically contacted and adhered to the conductive adhesive layer of the carrier, and a plurality of semiconductor dies having double-sided electrodes are disposed on the carrier; c) at least one set of pin pressing components electrically contacts at least the semiconductor dies The other surface electrode of one is tested; and d) the detection result is obtained.

The invention further discloses a double-sided electrode semiconductor die detecting machine, comprising: a set of carrying devices comprising: a metal conductive film; a frame for fixing and tightening the metal conductive film; and a layer formed on the metal conductive film a conductive adhesive layer on which one of the double-sided electrodes having the double-sided electrode semiconductor crystal grains is electrically contacted and adhered thereto; a metal conductive film and/or the conductive adhesive layer electrically connected to the carrier device, And supporting a conductive pedestal of the carrying device; a set of acupuncture components for electrically contacting the at least one of the semiconductor dies; and a set of processing devices for processing signals emitted by the semiconductor dies to be tested .

By using the invention, the double-sided electrode die with the deviation of the cutting and the unintended change of the light-emitting area is tested by the single pin-pressing component, and the electrical performance of the die is accurately measured before being shipped to the customer. By picking out non-qualified dies or classifying the illuminance, the customer can obtain the granules with the defect rate close to 0ppm and the most suitable for the customer, thus solving the above problems of the conventional detection method and the machine.

The foregoing and other objects, features, and advantages of the invention are set forth in the <RTIgt; For convenience of description, the detecting machine of the present invention is exemplified as an illuminating test machine, and the semiconductor die is a light-emitting diode die; of course, if the present invention is used for semiconductor components having double-sided electrodes, The scope of this case is undoubted.

As shown in FIG. 5, FIG. 6, the first embodiment of the present invention, according to the detecting step shown in FIG. 8, first, a carrying device 21 is electrically connected to the conductive base 25 of the testing machine in step a), and in this example The carrier device 21 further includes a metal conductive film 211 exemplified as copper foil, a conductive adhesive layer 212 having a surface impedance of less than 0.06 ohms, and a frame 213 for fixing the carrier device 21, and supported by the conductive base 25. Subsequently, step b) is performed to cause one of the double-sided electrode semiconductor grains 90 having the specific ductility substrate 92 to be electrically contacted to the carrier device 21 with one of the double-sided electrodes 91.

And step b) further comprises the following three steps: b1) placing a piece of wafer 9 which has not been cut and having a plurality of grains 90 as described above, placed on a piece of extensible exemplified herein as a blue film On the substrate 7, and the thickness and ductility of the blue film are about 100 μm and 200%, respectively; b2) stretching the extensible substrate 7 such that the crystal grains 90 in the wafer 9 are separated from each other; and b3) The mutually separated crystal grains 90 are moved such that the single-sided electrode 91 faces upward, and the other surface electrode 91 is electrically contacted and adhered to the conductive adhesive layer 212 of the carrier device 21.

Step c) is carried out with reference to FIG. 9. The detecting machine 2 is electrically connected to the upper electrode 91 of one of the semiconductor crystal grains 90 by a set of pin pressing components 24 for grain luminescence detection, and is detected by light. The 261 receives its illuminating data. Further, in step d), the illuminating detection data is processed by the processing device 26 and the detection result is recorded.

Furthermore, referring to FIG. 10, the step of detecting the die detecting method may also be performed as shown in FIG. 11, which is a second embodiment of the present invention. The difference from the previous example is that the step b) is sequentially included. The other three different steps: b4) placing a wafer that has not been separated and including a plurality of double-sided electrode dies on the conductive adhesive layer of the carrier, and electrically contacting the carrier with one of its double-sided electrodes; b5) stretching The ductility is superior to the metal conductive film of the semiconductor die substrate to separate the crystal grains from each other; and b6) the metal conductive film is fixed to a set of frames to keep the crystal grains separated from each other.

In addition, because the blue film described in the previous example is a consumable material that is difficult to reuse, a blue film is required to separate each wafer from the wafer; compared with the previous detection method, this example Not only will the cost of the blue film be saved, but also the time required to transfer the separated multiple grains to the carrying device, further reducing the number of processes and the man-hours used, and improving the efficiency of grain inspection. When the plurality of dies have been detected, the illuminating data is also transmitted to the processing device, and then step e) is performed by the picking device 27' to move the dies one by one away from the carrying device, thereby performing the subsequent sorting operation; The picking and separating operation of the picking device 27' is e1) concealing the metal conductive film and the conductive adhesive layer of the top support member 271' of the bottom of the conductive base on the bottom surface of the conductive base to reduce the area of the conductive adhesion layer of the die. E2) A set of pick-up members 272' is drawn from the conductive adhesive layer by a draw force greater than the adhesion of the conductive adhesive layer. Furthermore, the conductive adhesive layer shown in this example is a layer of conductive adhesive. The adhesive of the conductive adhesive has a adhesion of about 9.8 nt/in, and the adhesiveness can be adjusted, and can be easily applied to different types of crystal grains to be tested. And picking up the device.

Thus, with the double-sided electrode semiconductor die inspection machine disclosed in the present invention, the electrical performance of the double-sided electrode die separated by the wafer is accurately measured according to an automated inspection process, so that the customer can obtain the defect rate. The 0ppm grain not only improves the accuracy and efficiency of the test results, but also correctly classifies the die, so that the specifications and quality of the customer's products are consistent, which increases the market value of the product after testing.

However, the above is only a preferred embodiment of the present invention, and the scope of the present invention is not limited thereto, that is, the simple equivalent changes and modifications made by the scope of the present invention and the description of the invention are still It is within the scope of the patent of the present invention.

12. . . Plastic film

13,213. . . frame

14, 24. . . Acupressure assembly

15,25. . . Conductive base

2. . . Testing machine

twenty one. . . Carrying device

211. . . Metal conductive film

212. . . Conductive adhesive layer

26. . . Processing device

261. . . Light sensor

27’. . . Pickup device

271’. . . Top support

272’. . . Pickup

7. . . Extensible substrate

8, 9. . . Wafer

80, 90. . . Grain

81, 91. . . electrode

92. . . Substrate

a----e, b1)----b6), e1), e2), b'. . . step

1 is a top plan view of LED dies of two electrodes on the same side;

2 is a top plan view of respective LED dies on a plastic film;

3 is a schematic perspective view of a conventional two-electrode LED die on the same side, which is tested by a plastic film;

4 is a schematic perspective view of another conventional die, which is carried by a conductive pedestal;

5 is a perspective view showing a conductive base of a double-sided electrode semiconductor die detecting machine with an electrical contact bearing device according to a first embodiment of the present invention;

6 is a top plan view showing a blue film of a carrier wafer according to a first embodiment of the present invention;

7 is a schematic view showing a metal conductive film, a conductive adhesive layer, and a frame of a carrier device according to a first embodiment of the present invention;

FIG. 8 is a schematic diagram showing the steps of a method for detecting a semiconductor wafer having a double-sided electrode according to a first embodiment of the present invention; FIG.

FIG. 9 is a perspective view of a double-sided electrode semiconductor die detecting machine according to a first embodiment of the present invention; FIG.

FIG. 10 is a schematic diagram of a capturing device according to a second embodiment of the present invention; FIG.

FIG. 11 is a schematic diagram showing the steps of another die detecting method according to a second embodiment of the present invention.

a----d, b1)----b3). . . step

Claims (9)

A method for detecting a semiconductor wafer having a double-sided electrode comprises the steps of: a) providing a set of supporting devices having a metal conductive film and a conductive adhesive layer formed on the metal conductive film; b) making the double-sided electrode a conductive contact layer attached to the carrier, a plurality of semiconductor dies having double-sided electrodes disposed on the carrier; c) conductively contacting at least one of the semiconductor dies with at least one set of pinch members The other surface electrode is tested; and d) the detection result is obtained. The detection method of claim 1, wherein the step b) further comprises the following steps: b1) attaching a piece of wafer that has not been separated and including a plurality of double-sided electrode semiconductor dies to one piece. Extending the substrate; b2) stretching the extensible substrate such that the semiconductor dies in the wafer are separated from each other; and b3) separating the semiconductor dies that are separated from each other such that one of the double-sided electrodes is electrically conductive It is moved to the carrier device in contact with and attached to the conductive adhesive layer of the carrier. The detection method of claim 1, wherein the step b) further comprises the following steps: b4) disposing a wafer that has not been separated and including a plurality of wafers having double-sided electrode semiconductor grains to make the crystal grains One of the double-sided electrodes is electrically contacted and attached to the conductive adhesive layer of the carrier device, and is attached to the metal conductive film of the carrier device; b5) stretching the metal conductive film to separate the crystal grains from each other; And b6) fixing the metal conductive film to a set of frames to keep the crystal grains separated from each other. The method of claim 1, wherein the semiconductor die is a light-emitting diode die, and the step c) is capable of uniformly emitting the light by using the set of acupressure components. The polar crystal grains cause them to emit light. The detection method according to the first, second or third aspect of the patent application further includes the step e) of classifying according to the detection result after the step d). The detection method according to claim 5, wherein the classification step e) further comprises the following steps: e1) using a top support of a set of pick-up devices from the metal conductive film below the detected crystal grains The top of the die to be classified; and e2) extracting the semiconductor die to be classified out of the conductive adhesive layer by a picking member of the picking device with a drawing force greater than the adhesive force of the conductive adhesive layer. A double-sided electrode semiconductor die detecting machine comprises: a set of carrying devices comprising: a metal conductive film; a frame for fixing and tensioning the metal conductive film; and a layer formed on the metal conductive film for the And a conductive adhesive layer having one of the double-sided electrodes having the double-sided electrode semiconductor die electrically contacted and attached thereto; a set of electrically connecting the metal conductive film of the carrier device and/or the conductive adhesive layer and supporting the carrier a conductive base of the device; a set of pinch assemblies for electrically contacting the at least one of the semiconductor dies; and a set of processing means for processing signals from the semiconductor die to be tested. The machine platform of claim 7, further comprising a set of picking means including a top support member movable relative to the carrying device and a picking member corresponding to the top support member. A machine as claimed in claim 7 or 8, wherein the double-sided electrode semiconductor die is a light-emitting diode die, and the processing device comprises a set of photo sensors.