CN201477180U - Detection carrier of semiconductor crystal grain with double-sided electrode - Google Patents

Abstract

The utility model relates to a detection carrier of a semiconductor crystal grain with a double-sided electrode. A detection machine bench for detecting crystal grains comprises a group of detection carriers, a group of conductive bases, a group of stylus pressure assemblies and a group of processing devices. A conductive adhesion layer formed on a conductive bearing part of the detection carrier is in conductive contact with and attached to the semiconductor crystal grain with the double-sided electrode, so that crystal grains separated by cutting are subject to test classification by the conductive connection of the stylus pressure assemblies.

Description

The double-face electrode semiconductor grain detects carrier

[technical field]

The utility model is to detect carrier about a kind of semiconductor grain, and particularly a kind of double-face electrode semiconductor grain detects carrier.

[background technology]

Light emitting diode (LED) is widely used in the instrument indication or the signal lamp of backlight, signboard, hand-held lighting device and the steam turbine car of display gradually, and the luminosity of single element promotes gradually, and the chance that individual elements is used alone heightens.Common in the past manufacture method, be as shown in Figure 1, two electrodes 81 of LED crystal grain 80 are all taken shape in single side, in manufacturing and testing process, then be that the wafer of earlier the full wafer layout being finished carries out the part cutting with for example laser, under each intercrystalline is still kept in touch situation, be placed on the plastic film of a slice for carrying, make close attachment between wafer and plastic film.

Has good ductility because of plastic film subsequently, when plastic film 12 being stretched, tightens in as shown in Figure 2 framework 13, originally be attached to the full wafer wafer 8 on the plastic film, to disconnect by the part that respectively is cut, make that all crystal grains 80 is separated from one another and temporarily be attached on the plastic film 12, become single common tested state.During test, as shown in Figure 3, then be to press assembly 14 with two groups of pins, this LED crystal grain of activation is positioned at same side two electrodes respectively, makes that tested single LEDs crystal grain is luminous, and data such as its luminous intensity of sensing and optical field distribution, thereby differentiates the quality of this LED crystal grain.

For adapting to different demands, semiconductor grain also has different separately designs; For example present common high-brightness LED crystal grain, for effectively increasing the area of light-emitting area, light emission side only has single activation electrode, and ground-electrode is arranged on the opposite sides of light-emitting area, and when wafer state, the ground-electrode of each not separated crystal grain conducting each other as yet.Therefore when test, be as shown in Figure 4, the full wafer wafer is placed on the single conductive base 15, connect all ground-electrodes as common ground by conductive base 15, and press assembly 14 each crystal grain 90 of activation one by one with for example single pin, and after detection finishes each crystal grain 90 of cutting and separating.For ease of explanation, below this type of ground-electrode of address and activation electrode branch is the double-face electrode semiconductor grain at the crystal grain 90 of two opposition side faces.

Unfortunately, because the luminous intensity of single crystal grain strengthens gradually, whether luminous intensity precisely also becomes the subject under discussion that receives much concern, in cutting process, even deviation slightly, the crystal grain that the capital makes these cutting deviation both sides is because of the unexpected increase of light-emitting area or dwindle, and causes excessive or too small and its value that detracts of luminous intensity.How to confirm the luminous intensity of each crystal grain, and correct classification, make the product specification homogeneous that dispatches from the factory, just become the only effective means that promotes product competitiveness and price.

And this kind double-face electrode crystal grain is being placed in plastic film, and stretching plastic film and after making crystal grain separated from one another, because one of ground-electrode and activation electrode are inevitable smooth on nonconducting plastic film, if poke blue film contact bottom electrode (by the plastic film carrying) with guide pin, the high temperature that is produced during conducting can cause blue film to begin fusion when about 60 spend, therefore in the time of can not looking like the full wafer wafer on the one hand, connect to the common ground electrode with conductive base, press assembly to connect activation activation electrode and make it luminous tested with single pin; Can not press the assembly activation luminous with two groups of pins that are positioned at the same side.That is to say that according to present technology, the semiconductor grain that this kind has double-face electrode there is no suitable automated detection method after separation.

From the above, as if utilizing with existing detection mode and detecting the roughly compatible double-face electrode semiconductor grain of board and detect carrier, the above-mentioned crystal grain after each separates for detection will make that the electric property of crystal grain is accurately measured, thereby product quality promotes.

[utility model content]

One of the utility model purpose, be to provide a kind of detect cutting and separating after, the detection carrier of the double-face electrode semiconductor grain of electrically connect no longer mutually.

The utility model has a purpose, is to provide a kind of double-face electrode semiconductor grain with satisfactory electrical conductivity and thermal conductivity to detect carrier.

The utility model is a purpose again, but is to provide the double-face electrode semiconductor grain of the tested crystal grain of a kind of secure to detect carrier.

Another purpose of the utility model is to provide a kind of double-face electrode semiconductor grain of tool hole conduction supporting part of preferable radiating effect to detect carrier.

The another purpose of the utility model is to provide a kind of double-face electrode semiconductor grain that conducts electricity adhesion layer tool hole conduction supporting part easily attached to it to detect carrier.

The utility model more has a purpose, is to provide a kind of double-face electrode semiconductor grain of the tool hole conduction supporting part of low stickiness conduction adhesion layer that adopts to detect carrier, thereby reduces the problem of cull.

The utility model is that a kind of double-face electrode semiconductor grain detects carrier, comprising: a conduction supporting part; The framework of this conduction supporting part is fixed and is tightened in a confession; And one deck is formed on this conduction supporting part, for one of double-face electrode of these double-face electrode semiconductor grains by conduction contact conduction adhesion layer attached to it also.

So; cutting deviation and the double-face electrode crystal grain of the unexpected variation of light-emitting area; utilize the utility model carrying; and press assembly to connect activation and accept test with single pin; make the electric property of crystal grain accurately be measured, before client is given in shipment, choose defective crystal grain or carry out the luminosity classification; make client obtain the crystal grain that fraction defective levels off to 0ppm and conforms to customer requirements most, thereby solve the problems referred to above of common detection method and board.

Moreover, because conduction supporting part that the utility model defined more can be a conducting film with a plurality of holes, not only increase the area that contacts with air, thereby lifting heat-sinking capability, and when the conduction adhesion layer is applied,, and can adopt the lower viscose of stickiness also because of the contact area between viscose and conduction supporting part enlarges, the crystal grain that feasible detection finishes easily is removed, and the cull risk reduces simultaneously.

[description of drawings]

Fig. 1 is the schematic top plan view of the LED crystal grain of same side two electrodes;

Fig. 2 is the schematic top plan view that is positioned at the LED crystal grain of each self-separation on the plastic film;

Fig. 3 is common same side two electrode LED crystal grain, utilizes the plastic film carrying and the schematic perspective view of acceptance test;

Fig. 4 is common another crystal grain, accepts the schematic perspective view of test with the conductive base carrying;

Fig. 5 is that the double-face electrode semiconductor grain of the utility model first embodiment detects board, the conductive base schematic perspective view of its electric contact bogey;

Fig. 6 is the blue film schematic top plan view of the carrying wafer of the utility model first embodiment;

Fig. 7 is the synoptic diagram of metal conductive film, conduction adhesion layer and the framework of the bogey of the utility model first embodiment;

Fig. 8 is the step synoptic diagram of the double-face electrode semiconductor grain detection mode of the utility model first embodiment;

Fig. 9 is the schematic perspective view that the double-face electrode semiconductor grain of the utility model first embodiment detects board;

Figure 10 is the drawing device synoptic diagram of the utility model second embodiment;

Figure 11 is the step synoptic diagram of another crystal grain detection mode of the utility model second embodiment.

Figure 12 is the local enlarged diagram of the conduction supporting part with hole of the utility model the 3rd embodiment, and has hole because of the tinsel weaving;

Figure 13 is the enlarged diagram of the tool hole conduction supporting part of the utility model the 4th embodiment;

[main element symbol description]

12... plastic film 13,213... framework

14, the 24... pin is pressed assembly 15,25... conductive base

2... detect board 21... bogey

211... metal conductive film 212... conducts electricity adhesion layer

22 " ... metal knitted net 22 " ' ... metal film

222 " ... hole 222 " ' ... mesh

26... treating apparatus 261... OPTICAL SENSORS

27 ' ... drawing device 271 ' ... top bracing member

272 ' ... draw the extending substrate of part 7...

8,9 ... wafer 80,90... crystal grain

81,91... electrode 92... substrate

A----e, b1)----b6), e1), e2), b ' ... step

[embodiment]

About aforementioned and other technology contents, characteristics and effect of the present utility model, in the detailed description of the preferred embodiment of following cooperation Figure of description, can clearly present.For convenience of description, detection board of the present utility model is to be illustrated as luminous tester table, and the double-face electrode semiconductor grain detects carrier and also is illustrated as a bogey, and semiconductor grain is a kind of light-emittingdiode crystal grain; Certainly, also belong to category of the present utility model undoubtedly if utilize the utility model to carry out other project detection at semiconductor element with double-face electrode.

The utility model first embodiment shown in Fig. 5,6,7, according to detection step shown in Figure 8, the conductive base 25 of one bogey, 21 electric engaged test boards is provided with step a) earlier, and in this example, this bogey 21 more includes a conduction supporting part, layer of surface impedance less than 0.06 ohm conduction adhesion layer 212 and the framework 213 in order to fix this bogey 21, and supported by conductive base 25, and in this, this conduction supporting part is the metal conductive film 211 that one deck is illustrated as Copper Foil; Carry out one of the double-face electrode 91 that step b) order has a plurality of double-face electrode semiconductor grains 90 of certain extension substrate 92 subsequently and be contacted with bogey 21 by conduction; Moreover this metal conductive film 211 has a ductility that is better than this semiconductor grain substrate 92 in this example.

And this step b) comprises following three steps more in regular turn: b1) a slice is not cut as yet, and has a wafer 9 of a plurality of crystal grain mentioned above 90, be placed in a slice and be herein illustrated as on the extending substrate 7 of blue film, and the thickness and the ductility of the blue film of this sheet are about 100 μ m and 200% respectively; B2) this extending substrate 7 of stretching makes that the crystal grain 90 in this wafer 9 is separated from one another; And b3) move these crystal grain separated from one another 90, make its single electrode 91 up, 91 conductions of another side electrode contact and are attached to the conduction adhesion layer 212 of this bogey 21.

Hold and carry out step c) with reference to Fig. 9, this detection board 2 with one group of pin press one of assembly 24 these semiconductor grains 90 of conduction contact towards top electrode 91 carrying out the crystal grain luminous detection, and receive its luminous data by OPTICAL SENSORS 261.Carrying out step d) is again handled the luminous detection data and is noted down this testing result by treating apparatus 26.

Moreover, with reference to Figure 10, above-mentioned crystal grain detect step also as shown in figure 11 mode implement, this is second embodiment of the present utility model, being different from the precedent part is to comprise other three different steps in regular turn for its step b) then: b4) put a slice and do not separate and comprise the conduction adhesion layer of the wafer of a plurality of double-face electrode crystal grain as yet in bogey, and with this bogey of one of its double-face electrode conduction contact; B5) this ductility that stretches is better than the metal conductive film of semiconductor grain substrate, makes these crystal grain separated from one another; And b6) this metal conductive film is fixed on the framing, makes these crystal grain keep separated from one another.

Hold,, when desire is isolated crystal grain with every wafer, all need use the blue film of a slice more because the described blue film of precedent is a kind of reusable consumptive material that is difficult to; And compared to the detection mode of preamble, this example not only will be saved down the not striking cost of blue film, more need not incite somebody to action separated a plurality of crystal grain transposition the consumption time, further reduce partly operation and used man-hour thereof, and promoted the efficient that crystal grain detects in bogey; When these a plurality of crystal grain have detected when finishing all, its luminous data also is sent to treating apparatus, then carries out step e) and one by one crystal grain is moved away from bogey by drawing device 27 ', is carried out classification action subsequently; And the separating action that draws of this drawing device 27 ' is successively with e1) top bracing member 271 ' that is hidden in the conductive base bottom surface shores the metal conductive film and the conduction adhesion layer of bogey, reduce the area of die attach conduction adhesion layer, again with e2) one group draw part 272 ' with the power of drawing greater than this conduction adhesion layer adhesion, this crystal grain to be classified drawn break away from this conduction adhesion layer.Moreover, the conduction adhesion layer one deck conducting resinl shown in this example, the adhesion of this layer conducting resinl is about 9.8 newton/inches, and its tackness can be adjusted, and can easily be applicable to different types of crystal grain to be measured and drawing device.

The utility model the 3rd embodiment as shown in figure 12, though the conduction supporting part outward appearance in this example as smooth as the Copper Foil, in fact it is the metal knitted net 22 that becomes with superfine copper wire weaving "; therefore have many holes 222 " ', can increase the surface area of Metal Contact air, promote thermal diffusivity, but and the adhesion effect of reinforced conductive adhesion layer and conduction supporting part, reduce cull in the future be stained with stick take away on the tested crystal grain that finishes may; Certainly, the aspect of conduction supporting part is not limited to mentioned abovely in the utility model, and with reference to Figure 13, in the 4th embodiment, the conduction supporting part is that one deck has mesh 222 " ' metal film 22 " ', can reach the effect of precedent equally,

So, detect carrier by the double-face electrode semiconductor grain that the utility model disclosed, order detects board with a robotization testing process, order is accurately measured by the electric property of the double-face electrode crystal grain of wafer separate, make client can obtain the crystal grain of fraction defective 0ppm, not only promote the precision and the efficient of testing result, and correctly classified and surveyed crystal grain, make dispatch from the factory product specification, quality of client be able to unanimity, increased the marketable value after product is examined.

Only the above, it only is preferred embodiment of the present utility model, when can not limiting the scope that the utility model is implemented with this, promptly allly change and modification according to the utility model claim and application documents simple equivalent that content is done, all still belong in the scope that the utility model patent contains.

Claims (5)

1. a double-face electrode semiconductor grain detects carrier, it is characterized in that it comprises:

A conduction supporting part;

The framework of this conduction supporting part is fixed and is tightened in a confession; And

One deck is formed on this conduction supporting part, for one of double-face electrode of these double-face electrode semiconductor grains by conduction contact and conduction adhesion layer attached to it.

2. carrier as claimed in claim 1 is characterized in that this semiconductor grain has the substrate of a certain extension, and this conduction supporting part has the ductility that is better than this semiconductor grain substrate.

3. carrier as claimed in claim 1 is characterized in that, this conduction supporting part more comprises a slice metal conductive film.

4. carrier as claimed in claim 3 is characterized in that this metal conductive film more comprises a slice Copper Foil.

5. carrier as claimed in claim 1 is characterized in that, this conduction supporting part more comprises a metal knitted net.

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