CN202256599U

CN202256599U - Dual-lamp tester for diode chip

Info

Publication number: CN202256599U
Application number: CN 201120386841
Authority: CN
Inventors: 汪良恩; 裘立强; 葛宜威
Original assignee: YANGZHOU JIELI SEMICONDUCTOR CO Ltd
Current assignee: YANGZHOU JIELI SEMICONDUCTOR CO Ltd
Priority date: 2011-10-12
Filing date: 2011-10-12
Publication date: 2012-05-30
Anticipated expiration: 2021-10-12

Abstract

The utility model relates to a product quality detector when batches of diode chips are produced, and provides a dual-lamp tester for a diode chip, which can simply detect and distinguish faulted chips. The dual-lamp tester comprises an alternating current power supply for detecting, a detecting circuit, a filter capacitor C1, a filter capacitor C2, a test pen 1 and a detection pen 2. According to the phenomenon that material is often mixed on different etching sides of P/N sides of a chip which is formed by assembling the P side and the N side in a matching way in a product such as a TVS (transient voltage suppressor) and the like during manufacturing, the dual-lamp tester can be utilized for quickly distinguishing the mixed material. The dual-lamp tester tests the single side of the product to be tested by the one-way conductivity of a normal diode. Etching crystalline grains on the P side and the N side can be distinguished from each other to solve the abnormality that the mixed material with the same crystalline grain size exists on the different etching sides; and the dual-lamp tester can judge whether an edge is subjected to the phenomenon of an inversion layer or not when an O/J wafer is diffused, and products with bad electricity can be sorted after the products are scribed according to the crystalline grain sizes.

Description

Two lamp test devices of diode chip for backlight unit

Technical field

The utility model relates to the decision maker of wafer diffusion inversion layer, relates in particular to the product quality pick-up unit when producing diode chip for backlight unit in enormous quantities.

Background technology

At present, in the semiconductor diffusion process, can produce the problem of edge transoid when adopting the diffusion of paper source.So-called inversion layer carries out boron after phosphorus expands in diffusion process and expands, because the pressure boat is tight or other specific factors cause phosphorus face (normally marginal portion) to contain the boron knot.O/J (white glues) product particularly, mostly scribing back edge crystal grain is electrical bad crystal grain.And after the gold-plated output of O/J product, can't not test its electrical characteristics before the assembling, comprise breakdown reverse voltage, leakage current etc.And the design of two bright lamps can be judged the quality that chip is electrical before assembling, has accomplished the electrically judgement of quality of chip indirectly.

And the chip that the automotive electronics chip adopts P facet etch and N facet etch to combine is used for fields such as automobile current generator after the encapsulation.In process of production, the phenomenon of P face and N face same chip size batch mixing often occurs, list can't particularly cut into the state of crystal grain with its obvious differentiation from the situation of the angularity of etching face.Utilize two bright lamp test appearance can distinguish P facet etch material and N facet etch material.

In semi-conductor market today with keen competition, the testing tool that has a practicality solves unusual enquirement, has brought facility for test and production.The invention and the application of the bright tester of two lamps have very important meaning.

The utility model content

The utility model to above-mentioned two kinds unusual, provide a kind of can ordinary surveying and two lamp test devices of the diode chip for backlight unit of differentiating failure chip.

The technical scheme of the utility model is: comprise and detecting with AC power, testing circuit, filter capacitor C1, filter capacitor C2, test pen one and detecting pen two; Said testing circuit comprises forward circuit and negater circuit, and said forward circuit comprises each other resistance R 2, diode Z2 and the LED 2 of serial connection successively; Negater circuit comprises each other resistance R 1, LED 1 and the diode Z1 of serial connection successively; Said resistance R 2, R1 parallel connection, connect an end and the said filter capacitor C1 of said detection again with AC power; The parallel connection of the negative pole of the negative pole of said LED 2 and diode Z1, be connected said test pen one and said filter capacitor C2 again; Said detection links to each other with said detecting pen two with the other end of AC power; Filter capacitor C1 and filter capacitor C2 be ground connection respectively.

Be connected in parallel to resistance R 4 with said LED 2, be connected in parallel to resistance R 3 with said LED 1.

The utility model needs P face and N face to match and assembles the chip of back to TVS products such as (transient voltage inhibition diodes), when manufacturing, the phenomenon of the different etching face batch mixings of P/N face often occurs, utilizes this device to distinguish the batch mixing material fast.It utilizes the unidirectional conduction of normal diode, and test product is carried out the single face test, and is qualified like test product, no matter is to connect electricity forward or backwards then, and proving installation has only single lamp bright.Have quality problems like test product, then two lamps are all bright.The utility model can be distinguished P facet etch crystal grain easily and solve the unusual of the different etching face same chip size of production line batch mixing with N facet etch crystal grain; The 2nd, whether the edge exists the inversion layer phenomenon when judging the diffusion of O/J wafer, and after carrying out scribing according to crystallite dimension, sub-elects electrical defective products.

Description of drawings

Fig. 1 is the wiring diagram of the utility model,

Fig. 2 is the user mode synoptic diagram of the utility model,

1 is test pen one, 2nd among the figure, test pen two, 3rd, loading plate, the 4th, chip.

Embodiment

The technical scheme of the utility model is: comprise and detecting with AC power, testing circuit, filter capacitor C1, filter capacitor C2, test pen 1 and detecting pen 22; Said testing circuit comprises forward circuit and negater circuit, and said forward circuit comprises each other resistance R 2, diode Z2 and the LED 2 of serial connection successively; Negater circuit comprises each other resistance R 1, LED 1 and the diode Z1 of serial connection successively; Said resistance R 2, R1 parallel connection, connect an end and the said filter capacitor C1 of said detection again with AC power; The parallel connection of the negative pole of the negative pole of said LED 2 and diode Z1, be connected said test pen one and said filter capacitor C2 again; Said detection links to each other with said detecting pen two with the other end of AC power; Filter capacitor C1 and filter capacitor C2 be ground connection respectively.

The test philosophy of the utility model is as shown in Figure 2: (for ease of test, can chip 4 be placed on the loading plate 3 of a conduction)

(1) like the anode of testing needle one 1 connection diode chip for backlight unit 4, when test pen 22 connect the negative electrode of chip 4, LED 1 lamp was bright, and LED 2 lamps do not work;

(2) when the negative electrode of testing needle one 1 connection diode chip for backlight unit, when test pen 22 connect the anode of chip, LED 1 lamp did not work, and LED 2 lamps are bright;

At this moment, if there is inversion layer in chip 4.No matter be above-mentioned (1) or (2), LED1 and LED2 etc. all is bright state.

Because it is randomness that the P face of chip or N face contact with test board; And the anode of test pen contact chip still be negative electrode be uncertain; So LED1 and LED2 have only 1 lamp light yellow; Judge that then chip is good,, electrically puncturing of chip is described then if two lamps all present bright state.

To the automotive electronics chip, P/N has glass passivation protection, and the one side that table top is arranged is to contact with testing needle, and the one side of no table top contacts with test board, thereby can confirm that P, N face contact with test pen.For example above-mentioned (1) if above-mentioned LED1 lamp is bright, can judge that then the chip of surveying is a P facet etch material; If the LED2 lamp is bright, can judge that then the chip of surveying is a N facet etch material.

Claims

1. two lamp test devices of diode chip for backlight unit is characterized in that, comprise detecting with AC power, testing circuit, filter capacitor C1, filter capacitor C2, test pen one and detecting pen two; Said testing circuit comprises forward circuit and negater circuit, and said forward circuit comprises each other resistance R 2, diode Z2 and the LED 2 of serial connection successively; Negater circuit comprises each other resistance R 1, LED 1 and the diode Z1 of serial connection successively; Said resistance R 2, R1 parallel connection, connect an end and the said filter capacitor C1 of said detection again with AC power; The parallel connection of the negative pole of the negative pole of said LED 2 and diode Z1, be connected said test pen one and said filter capacitor C2 again; Said detection links to each other with said detecting pen two with the other end of AC power; Filter capacitor C1 and filter capacitor C2 be ground connection respectively.

2. two lamp test devices of diode chip for backlight unit according to claim 1 is characterized in that, are connected in parallel to resistance R 4 with said LED 2, are connected in parallel to resistance R 3 with said LED 1.