CN209199979U - Semiconductor chip crystal solidifying apparatus - Google Patents
Semiconductor chip crystal solidifying apparatus Download PDFInfo
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- CN209199979U CN209199979U CN201821814384.0U CN201821814384U CN209199979U CN 209199979 U CN209199979 U CN 209199979U CN 201821814384 U CN201821814384 U CN 201821814384U CN 209199979 U CN209199979 U CN 209199979U
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Abstract
The utility model discloses a kind of semiconductor chip crystal solidifying apparatus, applied to the light-emitting diode (LED) module for including circuit substrate and multiple luminescence units for being arranged on circuit substrate and being electrically connected to circuit substrate.Semiconductor chip crystal solidifying apparatus includes: laser generation module, proximate circuitry substrate and the lower section that circuit substrate is arranged in, for generating laser beam；And chip picks and places module, neighbouring luminescence unit and the top that luminescence unit is arranged in.Wherein, laser beam caused by laser generation module invests the luminescence unit of damage, the binding force between luminescence unit and circuit substrate to reduce damage；Chip picks and places module and removes the luminescence unit of damage from circuit substrate and form vacancy, and good luminescence unit is placed in vacancy by blocking；It is mobile that laser generation module and chip pick and place module synchronization.Whereby, so that the luminescence unit of damage can achieve the effect that repairing replaced good luminescence unit.
Description
Technical field
The utility model relates to a kind of chip crystal solidifying apparatus, more particularly to a kind of semiconductor chip crystal solidifying apparatus.
Background technique
Currently, light emitting diode (Light-Emitting Diode, LED) is because having light quality is good and luminous efficiency is high etc.
Characteristic and be widely used.In general, in order to make to have using light emitting diode as the display device of luminescence component
Preferred color representation ability, the prior art be using being collocated with each other for light-emitting diode chip for backlight unit of three kinds of colors of red, green, blue and
A full-color light-emitting diode display device is formed, this full-color light-emitting diode display device can pass through three kinds of colors of red, green, blue
Three kinds of red, green, blue of the color of light that light-emitting diode chip for backlight unit issues respectively, then again by forming a full-color coloured light after light mixing,
To carry out the display of relevant information.However, in the prior art, when the light-emitting diode chip for backlight unit damage being fixed on circuit substrate
Afterwards, the light-emitting diode chip for backlight unit of damage cannot be repaired again.
Utility model content
The technical problem to be solved by the utility model is to provide a kind of semiconductor chip in view of the deficiencies of the prior art
Crystal solidifying apparatus.
In order to solve the above technical problems, wherein a technical solution is to provide a kind of half used by the utility model
Conductor chip crystal solidifying apparatus, semiconductor chip crystal solidifying apparatus are applied to a light-emitting diode (LED) module, and light-emitting diode (LED) module includes
One circuit substrate and multiple luminescence units being arranged on circuit substrate and be electrically connected to circuit substrate, multiple luminescence units it
At least one of for one damage luminescence unit, wherein semiconductor chip crystal solidifying apparatus include: a laser generation module and
One chip picks and places module.Laser generation module proximate circuitry substrate and the top that circuit substrate is set, to swash for generating one
Light light beam.Chip picks and places module adjacent to luminescence unit and the top of luminescence unit is arranged in.Wherein, produced by laser generation module
Laser beam invest damage luminescence unit, with reduce damage luminescence unit and circuit substrate between binding force.Wherein,
Chip picks and places module and removes the luminescence unit of damage from circuit substrate and form a vacancy, and chip pick-and-place module is good by one
In good luminescence unit merging vacancy.Wherein, laser generation module and chip pick and place module synchronization movement, and chip picks and places module tool
There is air guide channel, laser beam caused by laser generation module passes through air guide channel.
Preferably, which may further comprise: position detecting module, and the position detecting module is adjacent
Nearly circuit substrate and the lower section that circuit substrate is set, between detection circuit substrate and the conductive materials of the luminescence unit of damage
Contact interface position.
Preferably, laser beam caused by the laser generation module invests the luminescence unit for being located at circuit substrate and damage
Conductive materials between contact interface, the combination between conductive materials to reduce the luminescence unit of circuit substrate and damage
Power, wherein position detecting module includes at least the receiving unit for receiving detection wave.
Preferably, conductive materials are anisotropic conductive film.
Preferably, which may further comprise: position detecting module, and the position detecting module is adjacent
Nearly circuit substrate and the lower section that circuit substrate is set, to detect the position of the new conductive materials of good luminescence unit.
Preferably, laser beam caused by the laser generation module invests good luminescence unit, so that good
Luminescence unit is fixed on base board and is electrically connected to circuit substrate, and the trend of purchasing of laser beam caused by laser generation module is good
The new conductive materials of good luminescence unit, to solidify new conductive materials, wherein position detecting module is included at least for connecing
Receive the receiving unit of detection wave.
Preferably, new conductive materials are anisotropic conductive adhesive paste.
Preferably, laser generation module picks and places module with chip and is connected with each other, and the setting of laser generation module is picked and placed in chip
The outside of module.
In order to solve the above technical problems, an other technical solution used by the utility model is to provide a kind of half
Conductor chip crystal solidifying apparatus, including a chip pick and place module and a laser generation module.Chip picks and places module for drawing simultaneously
A mobile luminescence unit.A laser beam caused by laser generation module passes through luminescence unit and projects positioned at a circuit base
A conductive materials between plate and the luminescence unit, the luminescence unit is electrically connected on a circuit substrate.Wherein, swash
It is mobile that light generation module and chip pick and place module synchronization.
A wherein beneficial effect of the utility model is, semiconductor chip crystal solidifying apparatus provided by the utility model,
It can be by the way that " the laser generation module is adjacent to the circuit substrate and the lower section of the circuit substrate is arranged in, for generating
One laser beam " and " chip picks and places module adjacent to the luminescence unit and the top of the luminescence unit is arranged in "
Technical solution, so that laser beam caused by the laser generation module invests the luminescence unit of the damage and reduces institute
The binding force between the luminescence unit of damage and the circuit substrate is stated, and the chip is made to pick and place module for the damage
Luminescence unit removed from the circuit substrate and form a vacancy.Whereby, since chip pick-and-place module is good by one
Luminescence unit be placed in the vacancy so that the luminescence unit of the damage can be by the good luminescence unit institute
Replace and achievees the effect that repairing.
An other beneficial effect of the utility model is, semiconductor chip crystal solidifying apparatus provided by the utility model,
Can by " laser beam caused by laser generation module pass through the luminescence unit project positioned at a circuit substrate and
A conductive materials between the luminescence unit, the luminescence unit is electrically connected on a circuit substrate " and it is " described to swash
The technical solution of light generation module and the movement of chip pick-and-place module synchronization ", so that produced by the laser generation module
A laser beam projected across the luminescence unit it is one conductive positioned at a circuit substrate and the luminescence unit
The luminescence unit is electrically connected on a circuit substrate by substance, also, the laser generation module and the chip pick and place
Module synchronization is mobile.Whereby, it can reach the effect that a good luminescence unit is fixed on to the circuit substrate.
For the enabled feature and technology contents for being further understood that the utility model, please refer to below in connection with the utility model
Detailed description and accompanying drawings, however generated attached drawing is merely provided for reference and description, is not used to add the utility model
With limitation.
Detailed description of the invention
Fig. 1 is the flow chart of semiconductor core sheet repairing method provided by the utility model.
Fig. 2 is the schematic diagram of the step S100 of semiconductor core sheet repairing method provided by the utility model.
Fig. 3 is the step S102 of semiconductor core sheet repairing method provided by the utility model and showing for step S102 (B)
It is intended to.
Fig. 4 is the schematic diagram of the step S104 of semiconductor core sheet repairing method provided by the utility model.
Fig. 5 is the schematic diagram of the step S106 of semiconductor core sheet repairing method provided by the utility model.
Fig. 6 is step S108, step S110 and the step of semiconductor core sheet repairing method provided by the utility model
The schematic diagram of S110 (B).
Fig. 7 is the schematic diagram of the step S102 (A) of semiconductor core sheet repairing method provided by the utility model.
Fig. 8 is the schematic diagram of the step S110 (A) of semiconductor core sheet repairing method provided by the utility model.
Fig. 9 is the first operation signal of the fixed luminescence unit of semiconductor chip crystal solidifying apparatus provided by the utility model
Figure.
Figure 10 is the first operation signal of the fixed luminescence unit of semiconductor chip crystal solidifying apparatus provided by the utility model
Figure.
Figure 11 is the first operation signal that semiconductor chip crystal solidifying apparatus provided by the utility model takes out luminescence unit
Figure.
Figure 12 is the second operation signal that semiconductor chip crystal solidifying apparatus provided by the utility model takes out luminescence unit
Figure.
Figure 13 is that the first structure of the chip pick-and-place module of semiconductor chip crystal solidifying apparatus provided by the utility model is shown
It is intended to.
Figure 14 is that the second structure of the chip pick-and-place module of semiconductor chip crystal solidifying apparatus provided by the utility model is shown
It is intended to.
Specific embodiment
It is to illustrate related " semiconductor chip repairing side disclosed in the utility model by particular specific embodiment below
The embodiment of method and semiconductor chip crystal solidifying apparatus ", those skilled in the art can be by contents disclosed in this specification
The advantages of solving the utility model and effect.The utility model can be implemented or be applied by other different specific embodiments,
The various details in this specification may be based on different viewpoints and application, carry out under the design for not departing from the utility model various
Modification and change.In addition, the attached drawing of the utility model is only simple schematically illustrate, not according to the description of actual size, prior sound
It is bright.The relevant technologies content of the utility model will be explained in further detail in the following embodiments and the accompanying drawings, but disclosure of that is not
To limit the protection scope of the utility model.
It please refers to shown in Fig. 1 to Fig. 6, the utility model provides a kind of semiconductor core sheet repairing method, including the following steps:
Firstly, providing a light-emitting diode (LED) module 1 shown in cooperation Fig. 1 and Fig. 2, light-emitting diode (LED) module 1 includes a circuit
Substrate 10 and multiple luminescence units 11 for being arranged on circuit substrate 10 and being electrically connected to circuit substrate 10, and multiple hairs
Light unit 11 at least one of for one damage luminescence unit 11B (step S100).In other words, light-emitting diode (LED) module
1 is arranged on circuit substrate 10 and is electrically connected to the luminous group G of circuit substrate 10 including a circuit substrate 10 and one, and
The group G that shines includes multiple luminescence units 11.
For example, each luminescence unit 11 includes that a light-emitting diode chip for backlight unit 111 and one is arranged in light-emitting diodes
Conductive materials 112 between the bottom end and circuit substrate 10 of tube chip 111.In addition, light-emitting diode chip for backlight unit 111 can for
Sapphire is a light-emitting diode chip for backlight unit (mini LED) for substrate, or has removed a gallium nitride light-emitting of sapphire
Diode chip for backlight unit (GaN LED or micro LED).In addition, conductive materials 112 can be an anisotropic conductive film (Anisotropic
Conductive Film, ACF), an anisotropic conductive adhesive paste (Anisotropic Conductive Paste, ACP) or any
The conductive material of type.It is worth noting that, it is damage that the luminescence unit 11B of damage, which is likely to be light-emitting diode chip for backlight unit 111,
And the case where light source can not be provided or conductive materials 112 be can not be conductive and the case where generate electrical property failure.
Then, it shown in cooperation Fig. 1 and Fig. 3, is invested and is damaged using a laser beam L caused by a laser generation module 2
Luminescence unit 11B, with reduce damage luminescence unit 11B and circuit substrate 10 between binding force (step S102).Citing
For, when the laser beam L caused by the laser generation module 2 invests the luminescence unit 11B of damage, the luminescence unit of damage
Binding force between 11B and circuit substrate 10 can be lowered, so that both the luminescence unit 11B of damage and circuit substrate 10 meeting
It is separated from each other.
Then, shown in cooperation Fig. 1 and Fig. 4, module 3 is picked and placed by the luminescence unit 11B of damage from circuit base using a chip
It is removed on plate 10 and forms a vacancy G10 (step S104), either, pick and place module 3 for the luminous list of damage using a chip
First 11B is removed from circuit substrate 10, so that the group G that shines forms a vacancy G10.For example, chip pick-and-place module 3 can
To be vacuum slot or any kind of pick-and-place machine (pick and place machine).
Next, picking and placing module 3 shown in cooperation Fig. 1 and Fig. 5 using chip and a good luminescence unit 11N being placed in sky
It lacks in G10 (step S106), either, picks and places module 3 using chip and a good luminescence unit 11N is placed in the group G that shines
Vacancy G10 in.For example, good luminescence unit 11N includes that a good light-emitting diode chip for backlight unit 111N and one is set
The new conductive materials 112N in the bottom end of good light-emitting diode chip for backlight unit 111N is set, and new conductive materials 112N can be
One anisotropic conductive adhesive paste or any kind of conductive material.
And then, shown in cooperation Fig. 1 and Fig. 6, good luminescence unit 11N is electrically connected to 10 (step of circuit substrate
S108).For example, the step of good luminescence unit 11N is electrically connected to circuit substrate 10 in (step S108), also into
One step includes: to invest good luminescence unit 11N using laser beam L caused by laser generation module 2, so that good
Luminescence unit 11N is fixed on circuit substrate 10 and is electrically connected to circuit substrate 10 (step S110).
Further, for example, shown in cooperation Fig. 1, Fig. 3 and Fig. 7, produced by using laser generation module 2
Laser beam L invest damage luminescence unit 11B the step of (step S102) in, may further comprise: cooperation Fig. 1 and Fig. 7
It is shown, using a position detecting module 4 with detection circuit substrate 10 and damage luminescence unit 11B a conductive materials 112 it
Between a contact interface position (step S102 (A))；Then, it shown in cooperation Fig. 1 and Fig. 3, is produced using laser generation module 2
Raw laser beam L invests contact circle being located between circuit substrate 10 and the conductive materials 112 of the luminescence unit 11B of damage
Face, binding force (the step S102 between conductive materials 112 to reduce the luminescence unit 11B of circuit substrate 10 and damage
(B)).For example, as shown in fig. 7, position detecting module 4 includes at least the receiving unit for receiving a detection wave L '
40, and detect wave L ' and can be provided by laser generation module 2.
Further, for example, shown in cooperation Fig. 1, Fig. 6 and Fig. 8, produced by using laser generation module 2
Laser beam L invest good luminescence unit 11N the step of (step S110) in, may further comprise: cooperation Fig. 1 and Fig. 8
It is shown, the position (step of a new conductive materials 112N of good luminescence unit 11N is detected using a position detecting module 4
Rapid S110 (A))；Then, it shown in cooperation Fig. 1 and Fig. 6, is invested using laser beam L caused by laser generation module 2 good
The new conductive materials 112N of luminescence unit 11N, to solidify new conductive materials 112N (step S110 (B)).For example,
As shown in figure 8, position detecting module 4 includes at least the receiving unit 40 for receiving a detection wave L ', and detect wave L '
It can be provided by laser generation module 2.
It is noted that the utility model also provides a kind of semiconductor chip crystal solidifying apparatus shown in cooperation Fig. 1 to Fig. 8
Z, and semiconductor chip crystal solidifying apparatus Z includes that a laser generation module 2 and a chip pick and place module 3.For example, it partly leads
Body chip crystal solidifying apparatus Z can apply to a light-emitting diode (LED) module 1.Light-emitting diode (LED) module 1 include a circuit substrate 10 and
Multiple luminescence units 11 for being arranged on circuit substrate 10 and being electrically connected to circuit substrate 10, and among multiple luminescence units 11
At least one be one damage luminescence unit 11B.
More specifically, cooperation Fig. 3 and Fig. 6 shown in, 2 proximate circuitry substrate 10 of laser generation module and be arranged in electricity
The lower section of base board 10, for generating a laser beam L.
For example, as shown in figure 3, laser beam L caused by laser generation module 2 (wavelength can be 355nm, 532nm
Or 1064nm) the luminescence unit 11B of damage can be invested, the knot between luminescence unit 11B and circuit substrate 10 to reduce damage
With joint efforts.That is, laser beam L caused by laser generation module 2 can be invested positioned at circuit substrate 10 and be damaged luminous
Contact interface between the conductive materials 112 of unit 11B, to reduce the conduction of the luminescence unit 11B of circuit substrate 10 and damage
Binding force between substance 112.
For example, as shown in fig. 6, laser beam L caused by laser generation module 2 (wavelength can be 355nm, 532nm
Or 1064nm) good luminescence unit 11N can be invested, so that good luminescence unit 11N is capable of fixing on circuit substrate 10
And it is electrically connected to circuit substrate 10.That is, laser beam L caused by laser generation module 2 can invest good shine
The new conductive materials 112N of unit 11N, to solidify new conductive materials 112N, whereby so that good luminescence unit 11N
It is capable of fixing on circuit substrate 10 and is electrically connected to circuit substrate 10.
More specifically, shown in cooperation Fig. 5 and Fig. 6, chip picks and places module 3 adjacent to luminescence unit 11 and setting is being sent out
The top of light unit 11.For example, chip picks and places module 3 and can remove the luminescence unit 11B of damage from circuit substrate 10
And a vacancy G10 (as shown in Figure 5) is formed, and chip picks and places module 3 and a good luminescence unit 11N is placed in vacancy G10
It is interior (as shown in Figure 6).
In above-described embodiment, the laser beam L for curing conductive substance 112N is combined with for reducing conductive materials 112
The wavelength of the laser beam L of power is different from each other.
More specifically, shown in cooperation Fig. 7 and Fig. 8, semiconductor chip crystal solidifying apparatus Z still further comprises position inspection
Survey module 4.4 proximate circuitry substrate 10 of position detecting module and the lower section that circuit substrate 10 is set, to detection circuit substrate
The position of a contact interface between 10 and a conductive materials 112 of the luminescence unit 11B damaged, or it is good to detect
Luminescence unit 11N a new conductive materials 112N position.
In addition, a kind of semiconductor chip die bond dress can also be provided in the utility model in a wherein preferred embodiment
Set Z.As shown in Fig. 9 to Figure 14, the utility model can also provide a kind of semiconductor chip crystal solidifying apparatus Z, include that chip picks and places
Module 3 and laser generation module 5.Chip picks and places module 3 for drawing and moving a luminescence unit 11.5 institute of laser generation module
The laser beam L generated projects one positioned at a circuit substrate 10 and luminescence unit 11 and leads across luminescence unit 11
Luminescence unit 11 is electrically connected on a circuit substrate 10 by isoelectric substance 112.Wherein, laser generation module 5 and chip pick and place mould
3 synchronizing moving of block.
For example, semiconductor chip crystal solidifying apparatus Z can apply to a light-emitting diode (LED) module 1, light-emitting diode (LED) module 1
Including a circuit substrate 10 and multiple luminescence units 11 for being arranged on circuit substrate 10 and being electrically connected to circuit substrate 10.
More specifically, cooperate shown in Fig. 9 to Figure 12, chip picks and places module 3 adjacent to luminescence unit 11 and setting is being sent out
The top of light unit 11.Wherein, (as shown in Figure 9, Figure 10, not chip, which picks and places module 3, can have the port connecting with a vacuum tube
Label).Chip, which picks and places module 3, can draw a good luminescence unit 11N, and good luminescence unit 11N is placed in vacancy G10
Interior (as shown in Fig. 9, Figure 10)；Relatively, chip pick and place module 3 also can be by the luminescence unit 11B of damage from circuit substrate 10
On remove and form a vacancy G10 (as shown in figure 12).
More specifically, cooperate Fig. 9 to Figure 12 shown in, 5 proximate circuitry substrate 10 of laser generation module and be arranged in electricity
The top of base board 10.Also, laser generation module 5 can be located at chip and pick and place the inside of module 3 or the week of chip pick-and-place module 3
It encloses, and 3 synchronizing moving of module can be picked and placed with chip；Wherein, in the present embodiment, it is located at chip with laser generation module 5 to pick and place
3 inside of module is as an example, but not limited to this.Laser generation module 5 is for generating a laser beam L.
For example, as shown in Figure 10, laser beam L caused by laser generation module 5 (wavelength can for 355nm,
532nm or 1064nm) good luminescence unit 11N can be invested, so that good luminescence unit 11N is capable of fixing in circuit substrate
On 10 and it is electrically connected to circuit substrate 10.That is, picking and placing in chip, module 3 is drawn and mobile luminescence unit 11 arrives circuit base
When plate 10, laser generation module 5 can pick and place 3 synchronizing moving of module to circuit substrate 10 with chip.Then, mould is picked and placed in chip
After good luminescence unit 11 is placed in vacancy G10 by block 3, laser beam L caused by laser generation module 5 can be invested well
Luminescence unit 11N new conductive materials 112N, to solidify new conductive materials 112N, so that good luminous list
First 11N is capable of fixing on circuit substrate 10 and is electrically connected to circuit substrate 10.
Again for example, as shown in figure 11, laser beam L caused by laser generation module 5 (wavelength can for 355nm,
532nm or 1064nm) the luminescence unit 11B of damage can be invested, between the luminescence unit 11B and circuit substrate 10 to reduce damage
Binding force.That is, laser beam L caused by laser generation module 5 can be invested positioned at circuit substrate 10 and damage
Contact interface between the conductive materials 112 of luminescence unit 11B, to reduce circuit substrate 10 and the luminescence unit 11B's of damage
Binding force between conductive materials 112.Then, the luminescence unit 11B that module 3 draws damage is picked and placed by chip, and will damage
Luminescence unit 11B removed from circuit substrate 10 and form a vacancy G10 (as shown in figure 12).
It is worth noting that, in a wherein preferred embodiment, the chip of the utility model picks and places module 3 and good
Luminescence unit 11N contact position 3a structure can be light-transmitting materials, in order to which laser beam L is penetrated and invest new conductive material
Matter 112N (relatively, luminescence unit 11B and conductive materials 112 that this embodiment is also applied for damage).
And in another preferred embodiment, it may include first that the chip of the utility model, which picks and places the main body of module 3,
Ontology 30 and the second ontology 31, and there is light guide structure in the first noumenon 30, to guide laser beam L and make laser beam L
Invest new conductive materials 112N or conductive materials 112.Wherein, the first noumenon 30 can be opaque material, and the first noumenon 30
It can be same material with the second ontology 31, can also be unlike material；Also, the first noumenon 30 and the second ontology 31 can be integrated into
Shape can also be structure independent.
In above-described embodiment, the laser beam L for curing conductive substance 112N is combined with for reducing conductive materials 112
The wavelength of the laser beam L of power is different from each other.
[beneficial effect of embodiment]
A wherein beneficial effect of the utility model is, semiconductor core sheet repairing method provided by the utility model,
It can be by " investing the luminescence unit 11B of damage, using a laser beam L caused by a laser generation module 2 to reduce damage
Luminescence unit 11B and circuit substrate 10 between binding force ", " pick and place module 3 for the luminescence unit of damage using a chip
11B is removed from circuit substrate 10 and is formed a vacancy G10 ", " picks and places module 3 for a good luminescence unit 11N using chip
Be placed in vacancy G10 in " and " good luminescence unit 11N is electrically connected to circuit substrate 10 " technical solution so that damage
Bad luminescence unit 11B can achieve the effect that repairing replaced good luminescence unit 11N.
A wherein beneficial effect of the utility model is, semiconductor chip crystal solidifying apparatus Z provided by the utility model,
" 2 proximate circuitry substrate 10 of laser generation module and the lower section that circuit substrate 10 is set, for generating a laser light can be passed through
The technical solution of beam L " and " chip picks and places module 3 adjacent to luminescence unit 11 and the top of luminescence unit 11 is arranged in ", so that
Obtain the luminescence unit that laser beam L caused by laser generation module 2 can invest the luminescence unit 11B of damage and reduce damage
Binding force between 11B and circuit substrate 10, and chip is made to pick and place module 3 for the luminescence unit 11B of damage from circuit base
It removes on plate 10 and forms a vacancy G10.Whereby, a good luminescence unit 11N is placed in vacancy since chip picks and places module 3
In G10, so that the luminescence unit 11B of damage can achieve the effect that repairing replaced good luminescence unit 11N.
Another beneficial effect of the utility model is, semiconductor chip crystal solidifying apparatus Z provided by the utility model, energy
By the way that " a laser beam L caused by laser generation module 5 passes through the luminescence unit 11 and projects positioned at a circuit base
A conductive materials 112N between plate 10 and the luminescence unit 11, is electrically connected to a circuit substrate for the luminescence unit 11
On 10 " and " the laser generation module 5 picks and places 3 synchronizing moving of module with the chip " technical solution so that described
A laser beam L caused by laser generation module 5 pass through the luminescence unit 11 and project positioned at a circuit substrate 3 with
A conductive materials 112N between the luminescence unit 11, the luminescence unit 11 is electrically connected on a circuit substrate 10,
Also, the laser generation module 5 picks and places 3 synchronizing moving of module with the chip.Whereby, pass through the laser generation module 5
3 synchronizing moving of module is picked and placed with the chip, and the luminescence unit 11 is moved to the circuit substrate 10, and utilize institute
The laser beam L for stating the generation of laser generation module 5 passes through the luminescence unit 11 and projects the conductive materials 112N, with
Achieve the effect that a good luminescence unit 11 being fixed on the circuit substrate 10.
Content disclosed above is only the preferred possible embodiments of the utility model, not thereby limits to the utility model
Claims scope, so it is all done with the utility model specification and accompanying drawing content equivalence techniques variation,
It is contained in the Claims scope of the utility model.
Claims (9)
1. a kind of semiconductor chip crystal solidifying apparatus, which is characterized in that the semiconductor chip crystal solidifying apparatus is applied to light-emitting diodes
Tube module, the light-emitting diode (LED) module include circuit substrate and multiple settings on the circuit substrate and are electrically connected to institute
State the luminescence unit of circuit substrate, multiple luminescence units at least one of for damage luminescence unit, wherein it is described
Semiconductor chip crystal solidifying apparatus includes:
Laser generation module, the laser generation module is adjacent to the circuit substrate and is arranged in the top of the circuit substrate,
For generating laser beam；And
Chip picks and places module, and the chip picks and places module adjacent to the luminescence unit and the top of the luminescence unit is arranged in；
Wherein, laser beam caused by the laser generation module invests the luminescence unit of the damage, to reduce the damage
Binding force between bad luminescence unit and the circuit substrate；
Wherein, the chip picks and places module and removes the luminescence unit of the damage from the circuit substrate and form vacancy,
And the chip picks and places module and good luminescence unit is placed in the vacancy；
Wherein, the laser generation module and the chip pick and place module synchronization movement, and the chip, which picks and places module, has air
Guiding channel, the laser beam caused by the laser generation module pass through the air guide channel.
2. semiconductor chip crystal solidifying apparatus according to claim 1, which is characterized in that may further comprise: position detection
Module, the position detecting module is adjacent to the circuit substrate and the lower section of the circuit substrate is arranged in, to detect the electricity
The position of contact interface between base board and the conductive materials of the luminescence unit of the damage.
3. semiconductor chip crystal solidifying apparatus according to claim 2, which is characterized in that produced by the laser generation module
The laser beam invest the institute being located between the conductive materials of the luminescence unit of the circuit substrate and the damage
Contact interface is stated, the binding force between the conductive materials to reduce the luminescence unit of the circuit substrate and the damage,
Wherein, the position detecting module includes at least the receiving unit for receiving detection wave.
4. semiconductor chip crystal solidifying apparatus according to claim 2, which is characterized in that the conductive materials are led for anisotropy
Electrolemma.
5. semiconductor chip crystal solidifying apparatus according to claim 1, which is characterized in that may further comprise: position detection
Module, the position detecting module is adjacent to the circuit substrate and the lower section of the circuit substrate is arranged in, described good to detect
The position of the new conductive materials of good luminescence unit.
6. semiconductor chip crystal solidifying apparatus according to claim 5, which is characterized in that produced by the laser generation module
The laser beam invest the good luminescence unit so that the good luminescence unit is fixed on the circuit base
On plate and it is electrically connected to the circuit substrate, and the laser beam trend of purchasing caused by the laser generation module is described good
Luminescence unit the new conductive materials, to solidify the new conductive materials, wherein the position detecting module is at least
Including the receiving unit for receiving detection wave.
7. semiconductor chip crystal solidifying apparatus according to claim 5, which is characterized in that the new conductive materials are different side
Property conducting resinl.
8. semiconductor chip crystal solidifying apparatus according to claim 1, which is characterized in that the laser generation module with it is described
Chip picks and places module and is connected with each other, and the outside that the chip picks and places module is arranged in the laser generation module.
9. a kind of semiconductor chip crystal solidifying apparatus characterized by comprising
Chip picks and places module, and the chip picks and places module for drawing and moving luminescence unit；And
Laser generation module, laser beam caused by the laser generation module pass through the luminescence unit and project and be located at
Conductive materials between circuit substrate and the luminescence unit, the luminescence unit is electrically connected on the circuit substrate；
Wherein, it is mobile to pick and place module synchronization for the laser generation module and the chip.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201821814384.0U CN209199979U (en) | 2018-11-05 | 2018-11-05 | Semiconductor chip crystal solidifying apparatus |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201821814384.0U CN209199979U (en) | 2018-11-05 | 2018-11-05 | Semiconductor chip crystal solidifying apparatus |
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| CN209199979U true CN209199979U (en) | 2019-08-02 |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111463230A (en) * | 2020-04-13 | 2020-07-28 | 深圳市华星光电半导体显示技术有限公司 | Repairing device for Micro L ED array substrate and repairing method for Micro L ED array substrate |
-
2018
- 2018-11-05 CN CN201821814384.0U patent/CN209199979U/en active Active
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111463230A (en) * | 2020-04-13 | 2020-07-28 | 深圳市华星光电半导体显示技术有限公司 | Repairing device for Micro L ED array substrate and repairing method for Micro L ED array substrate |
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Effective date of registration: 20220609 Address after: 6th floor, No. 609, Section 1, Wanshou Road, Guishan District, Taoyuan City, Taiwan, China, China Patentee after: Stoke Precision Technology Co.,Ltd. Address before: TaiWan, China Patentee before: ASTI GLOBAL Inc. TAIWAN |