CN112582519B - Transfer method and transfer equipment for micro light-emitting diode - Google Patents
Transfer method and transfer equipment for micro light-emitting diode Download PDFInfo
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- 241000252254 Catostomidae Species 0.000 description 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
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- 239000003086 colorant Substances 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67144—Apparatus for mounting on conductive members, e.g. leadframes or conductors on insulating substrates
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67242—Apparatus for monitoring, sorting or marking
- H01L21/67271—Sorting devices
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67242—Apparatus for monitoring, sorting or marking
- H01L21/67282—Marking devices
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/15—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components with at least one potential-jump barrier or surface barrier specially adapted for light emission
- H01L27/153—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components with at least one potential-jump barrier or surface barrier specially adapted for light emission in a repetitive configuration, e.g. LED bars
- H01L27/156—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components with at least one potential-jump barrier or surface barrier specially adapted for light emission in a repetitive configuration, e.g. LED bars two-dimensional arrays
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0008—Processes
- H01L2933/0033—Processes relating to semiconductor body packages
Abstract
The invention provides a transfer method and transfer equipment of a micro light-emitting diode, wherein the transfer method comprises the following steps: s1, providing a first substrate comprising a plurality of first micro light-emitting diodes, and acquiring position information of abnormal micro light-emitting diodes in the plurality of first micro light-emitting diodes; s2, providing a second substrate comprising a plurality of second micro light-emitting diodes, adapting the position information to the second substrate, and marking the second micro light-emitting diodes corresponding to the position information as target micro light-emitting diodes; s3, providing a third substrate, and pressing the second substrate onto the third substrate to make the target micro-LED correspond to the corresponding receiving terminal on the third substrate; s4, transferring the target micro light-emitting diode to the third substrate, and removing the second substrate; s5, peeling off the abnormal micro light-emitting diode to form a vacancy, and pressing the first substrate to the third substrate, wherein the vacancy corresponds to the target micro light-emitting diode; and S6, transferring the first micro light-emitting diodes to the corresponding receiving terminals on the third substrate.
Description
Technical Field
The embodiment of the invention relates to a display technology, in particular to a micro light emitting diode transfer method and transfer equipment.
Background
The micro light emitting diode (micro LED) technology is a technology for manufacturing a micro light emitting LED device by integrating a high-density micro-sized LED array on a substrate to realize the thinning, the miniaturization and the matrixing of the micro light emitting LED device. The distance between adjacent pixel points in the LED array reaches the micron level, and the realized LED device has the advantages of small volume, low power consumption, high brightness, ultrahigh resolution and color saturation. And the micro light-emitting diode array has faster response speed and longer service life. Currently, micro LED-based display technology has gained wide application in the display field, including smart phones and smart watches.
In the preparation process of the Micro-LED display panel, the key point is the massive transfer technology of the Micro-LED chips, namely the technology of transferring the Micro-LED chips on an original substrate for manufacturing the Micro-LED chips to a circuit motherboard of the display panel. Specifically, the LED particles are correspondingly picked up in batches by the transfer printing heads of the transfer printing suckers and are respectively transferred to corresponding areas of the receiving substrate, due to the limitation of the current Micro-LED process technology, the manufactured LED array has partial dead spots, the dead spot LED particles are easily transferred to the receiving substrate together in the transfer printing process, the display effect of the Micro-LED array is influenced, and in order to not pick up Micro-LEDs which do not need to be transferred in the transfer printing process, the control console is arranged to fix the Micro-LEDs which do not need to be transferred on the control console so as to achieve the purpose of selective transfer.
Disclosure of Invention
The invention provides a micro light emitting diode transfer method and transfer equipment, which are used for ensuring the display effect of a micro light emitting diode array transferred to a driving backboard by not picking up or transferring abnormal micro light emitting diodes which do not need to be transferred when the micro light emitting diode array is transferred.
In order to solve the above problems, the technical solution of the present invention provides a transfer method of a micro light emitting diode, where the transfer method includes:
s1, providing a first substrate comprising a plurality of first micro light-emitting diodes, and acquiring position information of abnormal micro light-emitting diodes in the plurality of first micro light-emitting diodes;
s2, providing a second substrate comprising a plurality of second micro light-emitting diodes, adapting the position information to the second substrate, and marking the second micro light-emitting diodes corresponding to the position information as target micro light-emitting diodes;
s3, providing a third substrate, wherein the third substrate is provided with a plurality of receiving terminals, and the second substrate is pressed on the third substrate so that the second micro light-emitting diodes and the target micro light-emitting diode respectively correspond to the receiving terminals;
s4, transferring the target micro light-emitting diode on the second substrate to the corresponding receiving terminal, and removing the second substrate;
s5, peeling off the abnormal micro light-emitting diode on the first substrate to form a vacancy, and pressing the first substrate to the third substrate, wherein the vacancy corresponds to the target micro light-emitting diode; and
and S6, transferring the first micro light-emitting diodes to corresponding receiving terminals on the third substrate.
As an optional technical solution, the first micro light emitting diode and the second light emitting diode are micro light emitting diodes of the same color.
As an optional technical solution, in S2, the step of fitting the position information onto the second substrate and marking the second micro light emitting diode corresponding to the position information as the target micro light emitting diode further includes:
s21, judging whether the size of the first substrate is the same as that of the second substrate; if yes, go to S22; if not, go to S23;
s22, marking a second light-emitting diode corresponding to the position information on the second substrate as the target micro light-emitting diode according to the position information;
and S23, controlling the center of the first substrate to be aligned with the center of the second substrate so that the projection of the abnormal micro light-emitting diode on the first substrate is covered on the second substrate, and marking the second micro light-emitting diode covered with the projection of the abnormal micro light-emitting diode as the target micro light-emitting diode.
As an optional technical solution, the S21 further includes:
acquiring the position information of abnormal micro light-emitting diodes in a plurality of second micro light-emitting diodes on the second substrate, judging whether the position information of the abnormal micro light-emitting diodes in the plurality of second micro light-emitting diodes is overlapped with the position information of the abnormal micro light-emitting diodes in the plurality of first micro light-emitting diodes, and marking the corresponding second light-emitting diodes on the second substrate as the target micro light-emitting diodes according to the position information of the abnormal micro light-emitting diodes in the plurality of first micro light-emitting diodes if the position information of the abnormal micro light-emitting diodes in the plurality of second micro light-emitting diodes is not overlapped with the position information of the abnormal micro light-emitting diodes in the plurality of first micro light-emitting diodes.
As an optional technical solution, the method further comprises,
s7, judging whether the size of the third substrate is larger than that of the first substrate or not, and if so, entering S8;
and S8, repeating the steps from S1 to S6, and continuously transferring the first micro light-emitting diodes and the target micro light-emitting diodes to the receiving terminals corresponding to the third substrate to form the display panel.
As an optional technical solution, a size of the third substrate and a size of the first substrate are in a multiple relationship.
As an optional technical solution, the S4 further includes: irradiating laser onto the target micro light-emitting diode to enable the target micro light-emitting diode to be peeled off from the second substrate, and transferring the target micro light-emitting diode onto a receiving terminal corresponding to the third substrate; the S6 further includes: and irradiating laser to the first micro light-emitting diodes to peel the first substrates from the first micro light-emitting diodes, and transferring the first micro light-emitting diodes to the corresponding receiving terminals of the third substrate.
As an optional technical solution, the first substrate and the second substrate are transparent substrates, respectively.
The present invention also provides a transfer apparatus for micro light emitting diodes, the transfer apparatus comprising: the processing unit is used for acquiring the position information of abnormal micro light-emitting diodes in a plurality of first micro light-emitting diodes on a first substrate, adapting the position information to a second substrate and marking second micro light-emitting diodes corresponding to the position information on the second substrate as target micro light-emitting diodes; the bonding unit is connected with the processing unit and is used for respectively pressing the second substrate and the first substrate onto a third substrate; the laser stripping unit is connected with the processing unit and is used for stripping the target micro light-emitting diode, the abnormal micro light-emitting diode and the plurality of first micro light-emitting diodes; and removing part of the abnormal micro light-emitting diodes, and transferring the plurality of first micro light-emitting diodes and the target micro light-emitting diode to corresponding receiving terminals on the third substrate respectively.
Compared with the prior art, the invention provides a micro light emitting diode transfer method and transfer equipment, which are characterized in that target micro light emitting diodes on a second substrate are selectively picked and transferred onto a third substrate, so that the vacancy on the first substrate on abnormal micro light emitting diodes is filled and stripped, and the abnormal micro light emitting diodes on the first substrate are prevented from being transferred onto the third substrate, so that the micro light emitting diodes transferred onto the third substrate are all normal micro light emitting diodes, and the manufacturing yield and the manufacturing efficiency of a display panel are improved.
The invention is described in detail below with reference to the drawings and specific examples, but the invention is not limited thereto.
Drawings
In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the drawings used in the description of the embodiments or the prior art will be briefly described below, and it is obvious that the drawings in the following description are some embodiments of the present invention, and other drawings can be obtained by those skilled in the art without creative efforts.
Fig. 1 is a flowchart illustrating a transfer method of micro leds according to an embodiment of the invention.
Fig. 2 to 9 are schematic views illustrating a process of manufacturing a display panel according to an embodiment of the invention.
Fig. 10 is a functional block diagram of a transfer device according to an embodiment of the present invention.
Fig. 11 and 12 are schematic views illustrating a manufacturing process of a color display panel according to an embodiment of the invention.
Fig. 13 to 15 are schematic views illustrating a manufacturing process of a color display panel according to another embodiment of the invention.
Detailed Description
In order to make the objects, technical solutions and advantages of the present invention more apparent, the present invention is described in further detail below with reference to embodiments and accompanying drawings. It should be understood that the specific embodiments described herein are merely illustrative of the invention and are not intended to limit the invention.
In the description of the present invention, it should be noted that the terms "center", "upper", "lower", "left", "right", "vertical", "horizontal", "inner", "outer", etc., indicate orientations or positional relationships based on the orientations or positional relationships shown in the drawings, and are only for convenience of description and simplicity of description, but do not indicate or imply that the device or element being referred to must have a particular orientation, be constructed and operated in a particular orientation, and thus, should not be construed as limiting the present invention.
As shown in fig. 1, an embodiment of the present invention provides a method for transferring a micro led, which includes:
s1, providing a first substrate comprising a plurality of first micro light-emitting diodes, and acquiring position information of abnormal micro light-emitting diodes in the plurality of first micro light-emitting diodes;
s2, providing a second substrate comprising a plurality of second micro light-emitting diodes, adapting the position information to the second substrate, and marking the second micro light-emitting diodes corresponding to the position information as target micro light-emitting diodes;
s3, providing a third substrate, wherein the third substrate is provided with a plurality of receiving terminals, and the second substrate is pressed on the third substrate so that the second micro light-emitting diodes and the target micro light-emitting diode respectively correspond to the receiving terminals;
s4, transferring the target micro light-emitting diode on the second substrate to the corresponding receiving terminal, and removing the second substrate;
s5, peeling off the abnormal micro light-emitting diode on the first substrate to form a vacancy, and pressing the first substrate to the third substrate, wherein the vacancy corresponds to the target micro light-emitting diode; and
and S6, transferring the first micro light-emitting diodes to corresponding receiving terminals on the third substrate.
The transfer method of the micro led in fig. 1 will be described in detail below with reference to fig. 2 to 9.
As shown in fig. 2 to 4, corresponding to S1 in the above-described transfer method; cutting a mother board 100 to form a first substrate 10 and a second substrate 20, wherein the first substrate 10 is provided with a plurality of first micro light-emitting diodes 11, and abnormal micro light-emitting diodes 12 exist in the plurality of first micro light-emitting diodes 11; the second substrate 20 is provided with a plurality of second micro light emitting diodes 21.
In this embodiment, before the motherboard 100 is cut, the test device is required to detect the photoelectric performance of the micro leds on the motherboard 100, and the photoelectric performance test parameters include: brightness, light-emitting wavelength, reverse leakage, starting voltage and the like, if various photoelectric performance parameters meet the requirements of a display panel of the micro light-emitting diode, the micro light-emitting diode is defined as a normal micro light-emitting diode, and otherwise, the micro light-emitting diode is defined as an abnormal micro light-emitting diode.
In the present invention, all of the plurality of first micro light emitting diodes 11 excluding the abnormal micro light emitting diode 12 are normal micro light emitting diodes.
The mother substrate 100 is, for example, a transparent substrate of sapphire that transmits infrared to ultraviolet light. In other embodiments of the present invention, if the micro light emitting diode is fabricated on a silicon-based, silicon carbide, gallium arsenide-based, or other opaque substrate, the micro light emitting diode thereon needs to be transferred to a transparent substrate, such as sapphire or glass, which is transparent to infrared and violet light, and then cut.
At present, because abnormal micro leds exist in a certain proportion inevitably on the motherboard 100 due to the micro led manufacturing process, the abnormal micro leds in different proportions often exist on the first substrate 10 and the second substrate 20 formed by cutting the motherboard 100.
The main purpose of the transfer method provided by the present invention is to replace the abnormal micro-leds 12 on the first substrate 10 by selectively picking up the target micro-leds 22 on the second substrate 20, so as to prevent the abnormal micro-leds 12 on the first substrate 10 from being transferred onto the third substrate 30, thereby ensuring that the micro-leds transferred onto the third substrate 30 are all normal micro-leds, and improving the manufacturing yield and efficiency of the display panel. Therefore, the position of the abnormal micro light emitting diode 12 on the first substrate 10 and the position of the abnormal micro light emitting diode 23 on the second substrate 20 must not overlap. In other words, the target micro-leds 22 on the second substrate 20 must be normal micro-leds that meet the requirements of the micro-led display panel.
As shown in fig. 3 and 4, the transferring method S1 further includes obtaining position information, such as coordinate information, of an abnormal micro-led 12 in the plurality of first micro-leds 11 on the first substrate 10; the transferring method S2 includes and fits the coordinate information onto the second substrate 20, and marks the second light emitting diode 21 fitted with the coordinate information as the target light emitting diode 22.
In this embodiment, S2 further includes:
s21, determining whether the size of the first substrate 10 is the same as the size of the second substrate 20; if yes, go to S22; if not, go to S23;
s22, marking the second light-emitting diode 21 corresponding to the position information on the second substrate 20 as the target micro light-emitting diode 22 according to the position information;
s23, controlling the center of the first substrate 10 to align with the center of the second substrate 20, so that the projection of the abnormal micro-led 12 on the first substrate 10 is covered on the second substrate 20, and marking the second micro-led 21 covered with the projection of the abnormal micro-led 12 as the target micro-led 22.
In addition, S22 further includes: the position information of the abnormal micro-leds 23 in the plurality of second micro-leds 21 on the second substrate 20 is obtained, whether the position information of the abnormal micro-leds 12 is overlapped with the position information of the abnormal micro-leds 23 is determined, and if not, the process proceeds to S22 to mark the target micro-leds 22 on the second substrate 20.
If the position information of the abnormal micro led 12 coincides with the position information of the abnormal micro led 23, the mother board 100 may be cut again to form another substrate, and the above determination process in S2 is repeated, so that when the micro led corresponding to the abnormal micro led 12 on the first substrate 10 on the another substrate is determined to be a normal micro led, the other steps of the above transfer method of the present invention may be continued.
Of course, in other embodiments of the present invention, if the position information of the abnormal micro led coincides with the position information of the abnormal micro led, the control program in the transferring apparatus may be used to convert the position information of the abnormal micro led on the first substrate to correspond to other normal micro leds on the second substrate, so that the abnormal micro led on the first substrate can be transferred to the third substrate instead of the abnormal micro led on the first substrate.
S23 further includes obtaining position information of the abnormal micro-leds 23 in the plurality of second micro-leds 21 on the second substrate 20, determining whether the position information of the projection of the abnormal micro-leds 12 on the second substrate 20 overlaps with the position information of the abnormal micro-leds 23, and if not, marking the second micro-leds 21 covered by the projection of the abnormal micro-leds 12 on the second substrate 20 as the target micro-leds 22.
As shown in fig. 3 and 4, corresponding to S2 in the above-described transfer method; the size of the first substrate 10 is the same as the size of the second substrate 20, and the control unit 201 (shown in fig. 10) of the transfer apparatus 200 acquires position information of the abnormal micro-light emitting diode 12 on the first substrate 10, the position information being, for example, coordinate information of the abnormal micro-light emitting diode 12.
As shown in fig. 5, corresponding to S3 in the above-described transfer method; the second substrate 20 is bonded to the third substrate 30, and the third substrate 30 is provided with a plurality of receiving terminals (not shown), which correspond to the electrode terminals of the micro second light emitting diodes 21 and the electrode terminals of the target micro light emitting diode 22 on the second substrate 20.
In this embodiment, a layer of anisotropic conductive adhesive may be attached to the third substrate 30, and the second substrate 20 is pressed onto the third substrate 30, and the electrode terminals of the target micro-leds 22 are connected to the corresponding receiving terminals on the third substrate 30 through the anisotropic conductive adhesive. When the anisotropic conductive adhesive is used to connect the target micro light emitting diode 22 and the corresponding receiving terminal on the third substrate 30, the pressing in S3 is a pre-pressing (or a dummy pressing), which belongs to a temporary bonding. In addition, after S6 is completed, the electrical connection between the first micro light-emitting diodes 11 and the target micro light-emitting diode 22 and the corresponding receiving terminal on the third substrate 30 is completed through the local pressing (or high temperature pressing).
In other embodiments of the present invention, the electrode terminals of the target micro light emitting diode and the corresponding receiving terminals on the third substrate are bonded by Eutectic Bonding (Eutectic Bonding).
As shown in fig. 6, corresponding to S4 in the above-mentioned transferring method, the target micro light emitting diodes 22 on the second substrate 20 are transferred to the corresponding receiving terminals on the third substrate 30, and the second substrate 20 is removed. It includes: laser is irradiated to the area of the second substrate 20 corresponding to the target micro-light emitting diode 22, so that the target micro-light emitting diode 22 is peeled off from the second substrate 20 and bonded to the receiving terminal corresponding to the third substrate 30.
The second substrate 20 is continuously removed from the third substrate 30, and at this time, the removed second substrate 20 includes a plurality of second micro light emitting diodes 21 other than the target micro light emitting diode 22.
As shown in fig. 7 and 8, corresponding to S5 in the above transferring method, the laser irradiates the area of the first substrate 10 corresponding to the abnormal micro-leds 12, so that the abnormal micro-leds 12 are peeled off from the first substrate 10 to form the void 13, and the first substrate 10 is pressed onto the third substrate 30, and the void 13 corresponds to the target micro-leds 22 on the third substrate 30, so that the target micro-leds 22 replace the abnormal micro-leds 12 on the first substrate 10, so that the micro-leds transferred onto the third substrate 30 to form the light emitting array of the display panel are all normal micro-leds meeting the display requirements of the display panel, and the problem that the micro-leds cannot be selectively transferred when the micro-leds array is transferred in the prior art is overcome.
In addition, in the transfer method provided by the invention, only the normal micro light-emitting diodes which meet the display requirements are transferred in the process of transferring the micro light-emitting diode array to the substrate, so that the step of independently repairing the abnormal micro light-emitting diodes before or after transferring the micro light-emitting diode array is not needed, the transfer and repair of the micro light-emitting diode array are synchronously carried out, and the yield and the manufacturing efficiency of the display panel are obviously improved.
As shown in fig. 8 and 9, corresponding to S6 in the above transferring method, the laser irradiates the areas corresponding to the first micro light emitting diodes 11 on the first substrate 10, so that the first micro light emitting diodes 11 and the first substrate 10 are peeled off, and then the motor terminals of the first micro light emitting diodes are electrically connected to the corresponding receiving terminals on the third substrate 30 through the process of local pressure or eutectic bonding.
In a preferred embodiment of the present invention, the transferring method further includes:
s7, judging whether the size of the third substrate 30 is larger than that of the first substrate 10, if so, entering S8;
and S8, repeating the steps from S1 to S6, and continuously transferring the first micro light-emitting diodes 11 and the target micro light-emitting diodes 22 to the corresponding receiving terminals of the third substrate 30 to form the display panel.
Preferably, the size of the third substrate 30 is a multiple of the size of the first substrate 10, that is, the entire surface of the third substrate 30 can be covered by splicing two or more first substrates 10 together. In other words, the micro led array formed by transferring the plurality of first micro leds 11 on the two or more first substrates 10 to the third substrate 30 may be entirely covered on the third substrate 30.
Preferably, the third substrate 30 may be a PCB substrate or a TFT backplane.
Preferably, if it is determined in S7 that the size of the third substrate 30 is equal to the size of the first substrate 10, the colorization process of the display panel is performed. As shown in fig. 10, the present invention further provides a transferring apparatus 200, which includes a processing unit 201, a bonding unit 202, and a laser lift-off unit 203, wherein the processing unit 201 obtains the position information of the abnormal micro-leds 12 on the first substrate 10, and adapts the position information onto the second substrate 20, and marks the second micro-leds 21 corresponding to the position information on the second substrate 20 as target micro-leds 22; the bonding unit 202 is connected to the processing unit 201, and the bonding unit 202 is used for sequentially pressing the second substrate 20 and the first substrate 10 to the third substrate 30; the laser lift-off unit 203 is connected to the processing unit 201, and the laser lift-off unit 293 is used for lifting off the target micro led 22, the abnormal micro led 11 and the plurality of first micro leds 11.
The transfer apparatus 200 further includes a detection unit (not shown), a reading unit (not shown), and an input unit (not shown) respectively connected to the processing unit 201, wherein the detection unit detects the plurality of first micro light emitting diodes 11 on the first substrate 10 and obtains position information of the abnormal micro light emitting diode 12 in the plurality of first micro light emitting diodes 11; the position information is read by the reading unit and input into the processing unit 201 through the input unit, and the processing unit 201 fits the position information onto the second substrate 20 and marks the second micro-light emitting diode 21 corresponding to the position information as the target micro-light emitting diode 22.
The transfer apparatus 200 further includes an alignment unit (not shown) that moves the second substrate 20 to align with the third substrate 30, and the target micro leds 22 are transferred to corresponding receiving terminals on the third substrate 30 under the actions of the bonding unit 202 and the laser lift-off unit 203; after that, the alignment unit moves the first substrate 10 to align with the third substrate 30, and the bonding unit 202 and the laser lift-off unit 203 transfer the plurality of first micro light-emitting diodes 11 to the corresponding receiving terminals on the third substrate 30.
As shown in fig. 11 and 12, in a preferred embodiment, the first micro leds 11 and the target micro leds 20 are the same color micro leds, preferably blue micro leds. When the blue light micro-light-emitting diode array is completely transferred to the third substrate 30, each pixel unit P on the corresponding third substrate 30 includes 3 blue light micro-light-emitting diodes 11, any two blue light micro-light-emitting diodes are selected to be respectively provided with a red quantum dot coating 41 and a green quantum dot coating 42, wherein light emitted by the blue light micro-light-emitting diodes 11 is converted into red through the red quantum dot coating 41, light emitted by the blue light micro-light-emitting diodes 11 is converted into green through the green quantum dot coating 42, and then three primary colors of RGB are provided in each pixel unit P on the third substrate 30.
As shown in fig. 13 to 15, in another preferred embodiment, a first motherboard (not shown) including red micro-leds 51, a second motherboard (not shown) including green micro-leds 52, and a third motherboard (not shown) including blue micro-leds 53 are provided.
Taking a first mother board including the red micro light emitting diodes 51 as an example, the first mother board is cut to obtain a first substrate and a second substrate, the array of the red micro light emitting diodes 51 is transferred onto the third substrate 30 by using a transfer device according to the transfer steps from S1 to S6 in the above transfer method, and the electrode terminal of each red micro light emitting diode 51 is electrically connected to the corresponding receiving terminal on the third substrate 30.
Based on this, the second mother board including the green micro-leds 52 and the third mother board including the blue micro-leds 53 are respectively cut, and the array of the green micro-leds 52 and the array of the blue micro-leds 53 are transferred onto the third substrate 30 by using the transfer device according to the transfer steps S1 to S6 in the above transfer method, and the electrode terminal of each green micro-led 51 and the electrode terminal of each blue micro-led 52 are respectively electrically connected to the corresponding receiving terminal on the third substrate 30.
As shown in fig. 15, each pixel unit P on the third substrate 30 includes red, green and blue micro-leds 51, 52, 53.
The invention also provides a display panel, which is manufactured by the transfer method.
In summary, the present invention provides a micro light emitting diode transfer method, a micro light emitting diode transfer apparatus, and a display panel, wherein a target micro light emitting diode on a second substrate is selectively picked up and transferred onto a third substrate, so that the gap on the first substrate where an abnormal micro light emitting diode is peeled off is filled, and the abnormal micro light emitting diode on the first substrate is prevented from being transferred onto the third substrate, thereby ensuring that the micro light emitting diodes transferred onto the third substrate are all normal micro light emitting diodes, and improving the manufacturing yield and the manufacturing efficiency of the display panel.
The present invention has been described in relation to the above embodiments, which are only exemplary of the implementation of the present invention. Furthermore, the technical features mentioned in the different embodiments of the present invention described above may be combined with each other as long as they do not conflict with each other. It is to be noted that the present invention may take various other embodiments, and that various changes and modifications may be effected therein by one skilled in the art without departing from the spirit and scope of the invention as defined in the appended claims.
Claims (9)
1. A transfer method of micro light emitting diodes is characterized in that the transfer method comprises the following steps:
s1, providing a first substrate comprising a plurality of first micro light-emitting diodes, and acquiring position information of abnormal micro light-emitting diodes in the plurality of first micro light-emitting diodes;
s2, providing a second substrate comprising a plurality of second micro light-emitting diodes, adapting the position information to the second substrate, and marking the second micro light-emitting diodes corresponding to the position information as target micro light-emitting diodes;
s3, providing a third substrate, wherein the third substrate is provided with a plurality of receiving terminals, and the second substrate is pressed on the third substrate so that the second micro light-emitting diodes and the target micro light-emitting diode respectively correspond to the receiving terminals;
s4, transferring the target micro light-emitting diode on the second substrate to the corresponding receiving terminal, and removing the second substrate;
s5, peeling off the abnormal micro light-emitting diode on the first substrate to form a vacancy, and pressing the first substrate to the third substrate, wherein the vacancy corresponds to the target micro light-emitting diode; and
and S6, transferring the first micro light-emitting diodes to corresponding receiving terminals on the third substrate.
2. The transfer method of claim 1, wherein the first and second micro light emitting diodes are micro light emitting diodes of the same color.
3. The transfer method according to claim 1, wherein in the step S2, the step of fitting the position information onto the second substrate and marking the second micro-led corresponding to the position information as the target micro-led further comprises:
s21, judging whether the size of the first substrate is the same as that of the second substrate; if yes, go to S22; if not, go to S23;
s22, marking a second micro light-emitting diode corresponding to the position information on the second substrate as the target micro light-emitting diode according to the position information;
and S23, controlling the center of the first substrate to be aligned with the center of the second substrate so that the projection of the abnormal micro light-emitting diode on the first substrate is covered on the second substrate, and marking the second micro light-emitting diode covered with the projection of the abnormal micro light-emitting diode as the target micro light-emitting diode.
4. The transfer method according to claim 3, wherein the S21 further includes:
acquiring the position information of abnormal micro light-emitting diodes in a plurality of second micro light-emitting diodes on the second substrate, judging whether the position information of the abnormal micro light-emitting diodes in the plurality of second micro light-emitting diodes is overlapped with the position information of the abnormal micro light-emitting diodes in the plurality of first micro light-emitting diodes, and marking the corresponding second micro light-emitting diodes on the second substrate as the target micro light-emitting diodes according to the position information of the abnormal micro light-emitting diodes in the plurality of first micro light-emitting diodes if the position information of the abnormal micro light-emitting diodes in the plurality of second micro light-emitting diodes is not overlapped with the position information of the abnormal micro light-emitting diodes in the plurality of first micro light-emitting diodes.
5. The transfer method according to claim 1, further comprising,
s7, judging whether the size of the third substrate is larger than that of the first substrate or not, and if so, entering S8;
and S8, repeating the steps from S1 to S6, and continuously transferring the first micro light-emitting diodes and the target micro light-emitting diodes to the receiving terminals corresponding to the third substrate to form the display panel.
6. The transfer method according to claim 5, wherein the size of the third substrate is in a multiple relationship with the size of the first substrate.
7. The transfer method according to claim 1,
the S4 further includes: irradiating laser onto the target micro light-emitting diode to enable the target micro light-emitting diode to be peeled off from the second substrate, and transferring the target micro light-emitting diode onto a receiving terminal corresponding to the third substrate;
the S6 further includes: and irradiating laser to the first micro light-emitting diodes to peel the first substrates from the first micro light-emitting diodes, and transferring the first micro light-emitting diodes to the corresponding receiving terminals of the third substrate.
8. The transfer method according to claim 1, wherein the first substrate and the second substrate are transparent substrates, respectively.
9. A micro light emitting diode transfer apparatus, the transfer apparatus comprising:
the processing unit is used for acquiring the position information of abnormal micro light-emitting diodes in a plurality of first micro light-emitting diodes on a first substrate, adapting the position information to a second substrate and marking second micro light-emitting diodes corresponding to the position information on the second substrate as target micro light-emitting diodes;
the bonding unit is connected with the processing unit and is used for respectively pressing the second substrate and the first substrate onto a third substrate; and
the laser stripping unit is connected with the processing unit and is used for stripping the target micro light-emitting diode, the abnormal micro light-emitting diode and the plurality of first micro light-emitting diodes;
and the other first micro light-emitting diodes and the target micro light-emitting diode after the abnormal micro light-emitting diodes are removed from the plurality of first micro light-emitting diodes are respectively transferred to corresponding receiving terminals on the third substrate.
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| CN106941108A (en) * | 2017-05-23 | 2017-07-11 | 深圳市华星光电技术有限公司 | Micro- LED display panel and preparation method thereof |
| CN109496368A (en) * | 2018-10-12 | 2019-03-19 | 京东方科技集团股份有限公司 | Micro- light-emitting diode assembly and its manufacturing method |
| CN110600590A (en) * | 2019-09-25 | 2019-12-20 | 深圳市华星光电半导体显示技术有限公司 | Transfer method of micro light-emitting diode and display panel |
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| CN106941108A (en) * | 2017-05-23 | 2017-07-11 | 深圳市华星光电技术有限公司 | Micro- LED display panel and preparation method thereof |
| CN109496368A (en) * | 2018-10-12 | 2019-03-19 | 京东方科技集团股份有限公司 | Micro- light-emitting diode assembly and its manufacturing method |
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