TWI419385B - Heat exchange unit - Google Patents
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- TWI419385B TWI419385B TW099102471A TW99102471A TWI419385B TW I419385 B TWI419385 B TW I419385B TW 099102471 A TW099102471 A TW 099102471A TW 99102471 A TW99102471 A TW 99102471A TW I419385 B TWI419385 B TW I419385B
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N10/00—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects
- H10N10/10—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects operating with only the Peltier or Seebeck effects
- H10N10/13—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects operating with only the Peltier or Seebeck effects characterised by the heat-exchanging means at the junction
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/38—Cooling arrangements using the Peltier effect
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/42—Fillings or auxiliary members in containers or encapsulations selected or arranged to facilitate heating or cooling
- H01L23/427—Cooling by change of state, e.g. use of heat pipes
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
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Description
本發明係關於包括熱電模組之熱交換單元,其中不同類型之熱電元件交替對準且以串聯方式電連接於吸熱電極與散熱電極之間。The present invention relates to a heat exchange unit including a thermoelectric module in which different types of thermoelectric elements are alternately aligned and electrically connected in series between the endothermic electrode and the heat dissipating electrode.
本申請案主張日本專利申請案第2009-18498號之優先權,該案之內容係以引用方式併入本文中。The present application claims priority to Japanese Patent Application No. 2009-18498, the disclosure of which is incorporated herein by reference.
習知地,開發及設計熱電模組使得由P型半導體及N型半導體組成之熱電元件交替對準且以串聯方式連接,且經由諸如焊接金屬之金屬固持在吸熱電極與散熱電極之間。有各種文獻揭示如下熱交換單元,其中將熱交換器接合至熱電模組之吸熱電極或散熱電極以便改良散熱效率。Conventionally, a thermoelectric module has been developed and designed such that thermoelectric elements composed of a P-type semiconductor and an N-type semiconductor are alternately aligned and connected in series, and are held between a heat absorbing electrode and a heat dissipating electrode via a metal such as a solder metal. Various documents disclose a heat exchange unit in which a heat exchanger is bonded to a heat absorbing electrode or a heat sink electrode of a thermoelectric module to improve heat dissipation efficiency.
專利文獻1:日本未審查專利申請案公開案第2003-332642號Patent Document 1: Japanese Unexamined Patent Application Publication No. 2003-332642
專利文獻2:日本未審查專利申請案公開案第2006-234362號Patent Document 2: Japanese Unexamined Patent Application Publication No. 2006-234362
專利文獻1揭示一種熱電轉換器單元,即圖14中所示之熱交換單元40。在熱交換單元40中,由防蝕鋁(或陽極氧化鋁)組成之絕緣層42形成於由一鋁板組成之熱交換部件(散熱片)41上;金屬電鍍層43以與金屬電極44相同的對準圖案整體地形成於絕緣層42上;且金屬電極44結合至金屬電鍍層43上。P型熱電元件45a及N型熱電元件45b交替對準且以串聯方式電連接於「下部」金屬電極44與「上部」金屬電極46之間。熱電模組40a由熱電元件45a及45b以及下部金屬電極44及上部金屬電極46構成。Patent Document 1 discloses a thermoelectric converter unit, that is, the heat exchange unit 40 shown in FIG. In the heat exchange unit 40, an insulating layer 42 composed of alumite (or anodized aluminum) is formed on a heat exchange member (heat sink) 41 composed of an aluminum plate; the metal plating layer 43 is in the same pair as the metal electrode 44. The quasi-pattern is integrally formed on the insulating layer 42; and the metal electrode 44 is bonded to the metal plating layer 43. The P-type thermoelectric element 45a and the N-type thermoelectric element 45b are alternately aligned and electrically connected in series between the "lower" metal electrode 44 and the "upper" metal electrode 46. The thermoelectric module 40a is composed of thermoelectric elements 45a and 45b, a lower metal electrode 44, and an upper metal electrode 46.
專利文獻2揭示一種熱交換器,即圖15中所示之熱交換單元50。熱交換單元50包括插入於散熱部件(或散熱片)51與吸熱部件(或散熱片)52之間的熱電轉換器模組(或熱電模組)50a,其中複數個熱電元件55插入於散熱電極53與吸熱電極54之間。在此,樹脂56a、金屬箔56b及焊料56c插入於散熱部件51與散熱電極53之間,而樹脂57a及油脂57b插入於吸熱部件52與吸熱電極54之間。樹脂56a沈積於散熱部件51之表面上,而樹脂57a沈積於吸熱部件52之表面上。在沈積期間,樹脂56a及57a經軟化以部分地滲透至形成於散熱部件51及吸熱部件52之表面上的空腔及裂痕中且接著被硬化。Patent Document 2 discloses a heat exchanger, that is, the heat exchange unit 50 shown in Fig. 15. The heat exchange unit 50 includes a thermoelectric converter module (or thermoelectric module) 50a interposed between the heat dissipating member (or heat sink) 51 and the heat absorbing member (or heat sink) 52, wherein the plurality of thermoelectric elements 55 are inserted into the heat dissipating electrode 53 is between the heat absorbing electrode 54. Here, the resin 56a, the metal foil 56b, and the solder 56c are inserted between the heat radiating member 51 and the heat radiating electrode 53, and the resin 57a and the grease 57b are inserted between the heat absorbing member 52 and the heat absorbing electrode 54. The resin 56a is deposited on the surface of the heat dissipating member 51, and the resin 57a is deposited on the surface of the heat absorbing member 52. During the deposition, the resins 56a and 57a are softened to partially penetrate into the cavities and cracks formed on the surfaces of the heat radiating member 51 and the heat absorbing member 52 and then hardened.
近來,已使用由氧化鋁粉末及氮化鋁組成之填充劑且使其均勻地分散至絕緣樹脂層(最初具有不良熱導率)中以便改良熱導率。專利文獻1中所揭示之熱交換單元40之設計未考慮到熱交換器41之表面粗糙度、絕緣層42之厚度及添加至絕緣層42(充當絕緣樹脂層)之填充劑。即使在熱交換器41係由表面塗覆有陽極氧化物塗層之鋁合金組成時,仍難以改良熱交換器41與絕緣層42之間的黏著且難以減小該兩者間之熱阻。Recently, a filler composed of alumina powder and aluminum nitride has been used and uniformly dispersed into an insulating resin layer (initially having poor thermal conductivity) in order to improve thermal conductivity. The design of the heat exchange unit 40 disclosed in Patent Document 1 does not take into consideration the surface roughness of the heat exchanger 41, the thickness of the insulating layer 42, and the filler added to the insulating layer 42 (serving as an insulating resin layer). Even when the heat exchanger 41 is composed of an aluminum alloy whose surface is coated with an anodic oxide coating, it is difficult to improve the adhesion between the heat exchanger 41 and the insulating layer 42 and it is difficult to reduce the thermal resistance between the two.
使散熱部件51及吸熱部件52之表面粗糙化,使得樹脂56a及57a可容易地滲透至空腔及裂痕中,其中裂紋及裂縫可能出現在絕緣樹脂層中,填充劑分散至該絕緣樹脂層中以改良熱導率。此係因為「硬」填充劑之分散會導致小的裂紋及裂縫歸因於熱壓合期間的加壓而形成於絕緣樹脂層中。即使在絕緣樹脂層藉由塗覆清漆樹脂而硬化時,此缺點仍會再產生。The surfaces of the heat radiating member 51 and the heat absorbing member 52 are roughened so that the resins 56a and 57a can easily penetrate into the cavity and the crack, wherein cracks and cracks may occur in the insulating resin layer, and the filler is dispersed into the insulating resin layer. To improve the thermal conductivity. This is because the dispersion of the "hard" filler causes small cracks and cracks to be formed in the insulating resin layer due to the pressurization during the thermocompression. This disadvantage is regenerated even when the insulating resin layer is hardened by applying a varnish resin.
本發明之一目標為提供一種熱交換單元,其中就表面粗糙度控制一熱交換器以便防止裂紋及裂縫形成於一絕緣樹脂層中,因此改良該熱交換器與該絕緣樹脂層之間的黏著。歸因於該熱交換器與該絕緣樹脂層之間的減小之熱阻,該熱交換單元具有高可靠性。An object of the present invention is to provide a heat exchange unit in which a heat exchanger is controlled in terms of surface roughness so as to prevent cracks and cracks from being formed in an insulating resin layer, thereby improving adhesion between the heat exchanger and the insulating resin layer. . The heat exchange unit has high reliability due to the reduced thermal resistance between the heat exchanger and the insulating resin layer.
一熱交換單元由一熱交換器及一熱電模組構成,該熱電模組包括一上部電極、一下部電極及複數個熱電元件。該等熱電元件插入且以串聯方式電連接於該上部電極與該下部電極之間。該熱交換器經由一絕緣層附接至該上部電極之表面及/或該下部電極之表面。控制毗鄰該絕緣層之該熱交換器之表面粗糙度使之小於4.7μm。舉例而言,在此,根據日本工業標準(即,JIS B0601)來估計表面粗糙度Ra。A heat exchange unit is composed of a heat exchanger and a thermoelectric module. The thermoelectric module includes an upper electrode, a lower electrode and a plurality of thermoelectric elements. The thermoelectric elements are inserted and electrically connected in series between the upper electrode and the lower electrode. The heat exchanger is attached to the surface of the upper electrode and/or the surface of the lower electrode via an insulating layer. The surface roughness of the heat exchanger adjacent to the insulating layer is controlled to be less than 4.7 μm. For example, here, the surface roughness Ra is estimated according to Japanese Industrial Standards (ie, JIS B0601).
根據關於熱交換單元之測試實例之量測結果,在熱交換器具有等於或小於4.7μm之表面粗糙度Ra(其中Ra4.7μm)且具有等於或大於0.1μm之表面粗糙度Ra(其中Ra0.1μm)之情況下,可能防止裂紋及裂縫形成於絕緣層與熱交換器之間的界面處,且可能均勻地形成具有指定厚度之絕緣層。即使當絕緣層之厚度小於100μm時,亦可能防止裂紋及裂縫形成於絕緣層中。此使得進一步減小絕緣層之厚度且藉此減小熱阻變得可能,因此改良吸熱/散熱效能。According to the measurement results of the test examples regarding the heat exchange unit, the heat exchanger has a surface roughness Ra equal to or less than 4.7 μm (where Ra) 4.7 μm) and having a surface roughness Ra equal to or greater than 0.1 μm (where Ra In the case of 0.1 μm), it is possible to prevent cracks and cracks from being formed at the interface between the insulating layer and the heat exchanger, and it is possible to uniformly form an insulating layer having a specified thickness. Even when the thickness of the insulating layer is less than 100 μm, it is possible to prevent cracks and cracks from being formed in the insulating layer. This makes it possible to further reduce the thickness of the insulating layer and thereby reduce the thermal resistance, thus improving the heat absorption/heat dissipation performance.
考慮到可製造性及製造成本,熱交換器較佳由具有高熱導率之鋁或鋁合金組成。絕緣層較佳由一具有高熱導率之單一絕緣樹脂層或一複合層(其中絕緣樹脂層層壓於一防蝕鋁層上)組成。填充劑較佳分散至絕緣樹脂或塗漆絕緣樹脂中以供用在絕緣層中。填充劑較佳由氧化鋁粉末、氮化鋁粉末、氧化鎂粉末或碳化矽粉末組成。絕緣樹脂較佳選自聚醯亞胺樹脂或環氧樹脂。就此而言,經由捲曲將絕緣樹脂形成為薄片狀形狀,或將其塗漆及固化。The heat exchanger is preferably composed of aluminum or an aluminum alloy having high thermal conductivity in view of manufacturability and manufacturing cost. The insulating layer is preferably composed of a single insulating resin layer having a high thermal conductivity or a composite layer in which an insulating resin layer is laminated on an alumite layer. The filler is preferably dispersed in an insulating resin or a varnish insulating resin for use in the insulating layer. The filler is preferably composed of alumina powder, aluminum nitride powder, magnesium oxide powder or tantalum carbide powder. The insulating resin is preferably selected from the group consisting of a polyimide resin or an epoxy resin. In this regard, the insulating resin is formed into a sheet shape via curling, or is painted and cured.
歸因於熱交換器之最佳化表面粗糙度,可能防止裂紋及裂縫形成於絕緣層中,可能改良該熱交換器與該絕緣層之間的黏著,且可能減小熱阻且藉此改良熱交換單元之吸熱/散熱效能及可靠性。Due to the optimized surface roughness of the heat exchanger, it is possible to prevent cracks and cracks from being formed in the insulating layer, possibly improving the adhesion between the heat exchanger and the insulating layer, and possibly reducing the thermal resistance and thereby improving Heat absorption/heat dissipation performance and reliability of the heat exchange unit.
將參看以下圖式更詳細地描述本發明之此等及其他目標、態樣及實施例。These and other objects, aspects and embodiments of the present invention will be described in more detail with reference to the accompanying drawings.
將參看隨附圖式以實例更詳細地描述本發明。The invention will be described in more detail by way of example with reference to the accompanying drawings.
將參看圖1A至圖1C描述根據本發明之第一實施例之熱交換單元10。如圖1C中所示,熱交換單元10由以下各者構成:一第一熱交換器(充當一散熱或吸熱的空氣冷卻散熱片)11、一形成於第一熱交換器11之表面上的絕緣層12、一安置於絕緣層12上之下部電極(充當一散熱或吸熱電極)13、結合至下部電極13上的複數個熱電元件14、一結合至該等熱電元件14上之上部電極(充當一散熱或吸熱電極)15、一第二熱交換器(充當一散熱或吸熱的空氣冷卻散熱片)16,及一形成於第二熱交換器16之表面上的絕緣層17。連接至一對引線之一對端子(均未圖示)形成於下部電極13之一個末端上。A heat exchange unit 10 according to a first embodiment of the present invention will be described with reference to Figs. 1A to 1C. As shown in FIG. 1C, the heat exchange unit 10 is composed of a first heat exchanger (serving as a heat dissipating or heat absorbing air cooling fin) 11, and a surface formed on the surface of the first heat exchanger 11. The insulating layer 12, a lower electrode disposed on the insulating layer 12 (serving as a heat dissipating or heat absorbing electrode) 13, a plurality of thermoelectric elements 14 coupled to the lower electrode 13, and an upper electrode coupled to the thermoelectric elements 14 ( It functions as a heat dissipating or heat absorbing electrode 15 , a second heat exchanger (serving as a heat dissipating or heat absorbing air cooling fin) 16 , and an insulating layer 17 formed on the surface of the second heat exchanger 16 . A pair of terminals (none of which are shown) connected to a pair of leads are formed on one end of the lower electrode 13.
一熱電模組M(參見圖3)由該等熱電元件14構成,該等熱電元件經由一接合金屬(諸如,焊料)而以串聯方式電連接於下部電極13與上部電極15之間。A thermoelectric module M (see FIG. 3) is composed of the thermoelectric elements 14, which are electrically connected in series between the lower electrode 13 and the upper electrode 15 via a bonding metal such as solder.
第一熱交換器11及第二熱交換器16各自由具有高熱導率之鋁或鋁合金組成,其中(毗鄰絕緣層12之)第一熱交換器11之表面及(毗鄰絕緣層17之)第二熱交換器16之表面各自經修整而具有5μm或更小之表面粗糙度Ra。另外,許多散熱鰭片11a自第一熱交換器11向下突出,而許多散熱鰭片16a自第二熱交換器16向上突出。The first heat exchanger 11 and the second heat exchanger 16 are each composed of aluminum or aluminum alloy having high thermal conductivity, wherein (the surface adjacent to the insulating layer 12) the surface of the first heat exchanger 11 and (adjacent to the insulating layer 17) The surfaces of the second heat exchanger 16 are each trimmed to have a surface roughness Ra of 5 μm or less. In addition, a plurality of heat radiating fins 11a protrude downward from the first heat exchanger 11, and a plurality of heat radiating fins 16a protrude upward from the second heat exchanger 16.
絕緣層12及17各自由聚醯亞胺樹脂、環氧樹脂或防蝕鋁組成,該等絕緣層具有10μm至100μm之厚度。較佳將由具有15μm或更小之平均粒徑的氧化鋁(Al2 O3 )、氮化鋁(AlN)、氧化鎂(MgO)或碳化矽(SiC)組成之填充劑分散至由聚醯亞胺樹脂或環氧樹脂組成之絕緣層12及17中,從而改良熱導率。另外,較佳將分散有填充劑之聚醯亞胺樹脂或環氧樹脂層壓於由防蝕鋁組成之絕緣層12及17上。Each of the insulating layers 12 and 17 is composed of a polyimide resin, an epoxy resin or an alumite, and the insulating layers have a thickness of 10 μm to 100 μm. Preferably, a filler composed of alumina (Al 2 O 3 ), aluminum nitride (AlN), magnesium oxide (MgO) or tantalum carbide (SiC) having an average particle diameter of 15 μm or less is dispersed to the polyruthenium. An insulating layer 12 and 17 composed of an amine resin or an epoxy resin improves the thermal conductivity. Further, it is preferred to laminate a polyimine resin or an epoxy resin in which a filler is dispersed on the insulating layers 12 and 17 composed of alumite.
當下部電極13充當一散熱電極時,上部電極15充當一吸熱電極,或當下部電極13充當吸熱電極時,上部電極15充當散熱電極。下部電極13及上部電極15各自由銅薄膜或銅合金薄膜組成,該等電極具有70μm至200μm之厚度。下部電極13具有圖2A中所示之對準圖案,而上部電極15具有圖2B中所示之對準圖案。下部電極13之每一區段形成為具有3mm之長長度及1.8mm之短長度的矩形形狀。類似地,上部電極15之每一區段形成為具有3mm之長長度及1.8mm之短長度的矩形形狀。When the lower electrode 13 functions as a heat radiating electrode, the upper electrode 15 functions as a heat absorbing electrode, or when the lower electrode 13 functions as a heat absorbing electrode, the upper electrode 15 functions as a heat radiating electrode. The lower electrode 13 and the upper electrode 15 are each composed of a copper thin film or a copper alloy thin film having a thickness of 70 μm to 200 μm. The lower electrode 13 has the alignment pattern shown in FIG. 2A, and the upper electrode 15 has the alignment pattern shown in FIG. 2B. Each section of the lower electrode 13 is formed into a rectangular shape having a length of 3 mm and a short length of 1.8 mm. Similarly, each section of the upper electrode 15 is formed into a rectangular shape having a length of 3 mm and a short length of 1.8 mm.
由P型半導體及N型半導體組成之該等熱電元件14係以使P型半導體與N型半導體交替對準之方式串聯地電連接於下部電極13與上部電極15之間。該等熱電元件14係經由SnSb合金、AuSn合金或SnAgCu合金焊接至下部電極13及上部電極15。對該等熱電元件14之遠端鍍鎳,使得該等熱電元件14可容易地焊接至下部電極13及上部電極15。The thermoelectric elements 14 composed of a P-type semiconductor and an N-type semiconductor are electrically connected in series between the lower electrode 13 and the upper electrode 15 in such a manner that the P-type semiconductor and the N-type semiconductor are alternately aligned. The thermoelectric elements 14 are soldered to the lower electrode 13 and the upper electrode 15 via a SnSb alloy, an AuSn alloy, or a SnAgCu alloy. The distal ends of the thermoelectric elements 14 are nickel plated so that the thermoelectric elements 14 can be easily soldered to the lower electrode 13 and the upper electrode 15.
該等熱電元件14較佳由在室溫下具有高熱電效能的Bi-Te燒結熱電材料組成。具體言之,較佳使用由Bi-Sb-Te之三元化合物組成之P型半導體及由Bi-Sb-Te-Se之四元化合物組成之N型半導體。在當前實施例中,P型半導體由Bi0.5 Sb1.5 Te3 組成,而N型半導體由Bi1.9 Sb0.1 Te2.6 Se0.4 組成,其中對此等半導體進行液體淬火以便產生箔粉末(foil powder),箔粉末接著被熱壓以形成塊體,該等塊體接著被切割成各自具有長1.35mm、寬1.35mm及高1.5mm之指定尺寸的小片。The thermoelectric elements 14 are preferably composed of a Bi-Te sintered thermoelectric material having high thermoelectric efficiency at room temperature. Specifically, a P-type semiconductor composed of a ternary compound of Bi-Sb-Te and an N-type semiconductor composed of a quaternary compound of Bi-Sb-Te-Se are preferably used. In the current embodiment, the P-type semiconductor is composed of Bi 0.5 Sb 1.5 Te 3 and the N-type semiconductor is composed of Bi 1.9 Sb 0.1 Te 2.6 Se 0.4 , wherein the semiconductors are subjected to liquid quenching to produce a foil powder, The foil powder is then hot pressed to form a block which is then cut into small pieces each having a specified size of 1.35 mm long, 1.35 mm wide and 1.5 mm high.
藉由以下程序製造熱交換單元10。The heat exchange unit 10 is manufactured by the following procedure.
首先,製備第一熱交換器11(充當一散熱的空氣冷卻散熱片),以使得具有黏著性之絕緣層12形成於該熱交換器的一個面上,而散熱鰭片11a形成於其相反面上。類似地,製備第二熱交換器16(充當一吸熱的空氣冷卻散熱片),以使得具有黏著性之絕緣層17形成於該熱交換器的一個面上,而散熱鰭片16a形成於其相反面上。另外,預先製備下部電極13(充當一散熱電極)及上部電極15(充當一吸熱電極)。此外,預先製備由P型半導體及N型半導體組成之該等熱電元件14。First, a first heat exchanger 11 (serving as a heat-dissipating air-cooling fin) is prepared such that an adhesive insulating layer 12 is formed on one surface of the heat exchanger, and heat-dissipating fins 11a are formed on opposite sides thereof. on. Similarly, a second heat exchanger 16 (serving as an endothermic air-cooling fin) is prepared such that an adhesive insulating layer 17 is formed on one side of the heat exchanger, and heat-dissipating fins 16a are formed on the opposite side. On the surface. Further, the lower electrode 13 (serving as a heat radiating electrode) and the upper electrode 15 (serving as a heat absorbing electrode) are prepared in advance. Further, the thermoelectric elements 14 composed of a P-type semiconductor and an N-type semiconductor are prepared in advance.
第一熱交換器11及第二熱交換器16各自由具有高熱導率之鋁或鋁合金組成。(毗鄰絕緣層12之)第一熱交換器11之表面及(毗鄰絕緣層17之)第二熱交換器16之表面各自經修整而具有5μm或更小之表面粗糙度Ra。藉由將由Al2 O3 、AlN、MgO或SiC組成之粉末填充劑分散至具有黏著性之聚醯亞胺樹脂層或環氧樹脂層中來形成絕緣層12及17。或者,使用複合層形成該等絕緣層,在該等複合層中,分散有填充劑之聚醯亞胺樹脂層或環氧層係形成於防蝕鋁層上。在此,藉由捲曲薄片形狀之材料來形成絕緣層12及17。或者,將清漆塗覆至薄片形狀之材料,接著將其固化以形成絕緣層12及17。下部電極13及上部電極15各自由一銅薄膜或一銅合金薄膜組成且各自成形成指定電極圖案,該等電極具有70μm至200μm之指定厚度。對P型半導體及N型半導體之遠端(或縱向方向上之相反末端)鍍鎳。The first heat exchanger 11 and the second heat exchanger 16 are each composed of aluminum or an aluminum alloy having a high thermal conductivity. The surface of the first heat exchanger 11 (adjacent to the insulating layer 12) and the surface of the second heat exchanger 16 (adjacent to the insulating layer 17) are each trimmed to have a surface roughness Ra of 5 μm or less. The insulating layers 12 and 17 are formed by dispersing a powder filler composed of Al 2 O 3 , AlN, MgO or SiC into an adhesive polyimide or epoxy layer. Alternatively, the insulating layers are formed using a composite layer in which a polyimine resin layer or an epoxy layer in which a filler is dispersed is formed on the alumite layer. Here, the insulating layers 12 and 17 are formed by crimping the material of the sheet shape. Alternatively, the varnish is applied to a sheet-shaped material, which is then cured to form insulating layers 12 and 17. The lower electrode 13 and the upper electrode 15 are each composed of a copper thin film or a copper alloy thin film and each form a predetermined electrode pattern having a specified thickness of 70 μm to 200 μm. The far end (or the opposite end in the longitudinal direction) of the P-type semiconductor and the N-type semiconductor is plated with nickel.
將具有圖2A中所示之指定電極圖案的由一銅薄膜或一銅合金薄膜組成之下部電極13結合至第一熱交換器11之絕緣層12上。隨後,如圖1B中所示,在下部電極13上交替對準由P型半導體及N型半導體組成的該等熱電元件14,其中該等熱電元件14之下端經由一焊接合金(例如,SnSb合金、AuSn合金及SnAgCu合金)而附接至下部電極13上。另外,具有圖2B中所示之指定電極圖案的由一銅薄膜或一銅合金薄膜組成之上部電極15安置於該等熱電元件14之上端上。The lower electrode 13 composed of a copper film or a copper alloy film having the specified electrode pattern shown in Fig. 2A is bonded to the insulating layer 12 of the first heat exchanger 11. Subsequently, as shown in FIG. 1B, the thermoelectric elements 14 composed of a P-type semiconductor and an N-type semiconductor are alternately aligned on the lower electrode 13, wherein the lower ends of the thermoelectric elements 14 are via a solder alloy (for example, a SnSb alloy). The AuSn alloy and the SnAgCu alloy are attached to the lower electrode 13. Further, an upper electrode 15 composed of a copper film or a copper alloy film having the specified electrode pattern shown in Fig. 2B is disposed on the upper ends of the thermoelectric elements 14.
此後,經由一焊接合金(例如,SnSb合金、AuSn合金及SnAgCu合金)將上部電極15附接至該等熱電元件14之上端上。因此,由P型半導體及N型半導體組成的該等熱電元件14交替對準且以串聯方式電連接於下部電極13與上部電極15之間。Thereafter, the upper electrode 15 is attached to the upper ends of the thermoelectric elements 14 via a solder alloy (for example, a SnSb alloy, an AuSn alloy, and a SnAgCu alloy). Therefore, the thermoelectric elements 14 composed of a P-type semiconductor and an N-type semiconductor are alternately aligned and electrically connected in series between the lower electrode 13 and the upper electrode 15.
最後,如圖1C中所示,使第二熱交換器16之絕緣層17與上部電極15接觸;接著,將上部電極15附接至絕緣層17。此完成第一實施例之熱交換單元10之製造。Finally, as shown in FIG. 1C, the insulating layer 17 of the second heat exchanger 16 is brought into contact with the upper electrode 15; then, the upper electrode 15 is attached to the insulating layer 17. This completes the manufacture of the heat exchange unit 10 of the first embodiment.
第一實施例之熱交換單元10可用以控制氣態物質之溫度。亦即,熱交換單元10經配置以使得第二熱交換器16(充當吸熱之空氣冷卻散熱片)之散熱鰭片16a進入經受溫度控制之氣態物質中。在此狀態下,將電施加至熱電模組M,其中該等熱電元件14以串聯方式電連接於「散熱的」下部電極13與「吸熱的」上部電極15之間,使得上部電極15經冷卻以藉由第二熱交換器16之散熱鰭片16a自該經受溫度控制之氣態物質吸收熱量。就此而言,在正被加熱的下部電極13中產生熱量,但經由第一熱交換器11之散熱鰭片11a耗散。The heat exchange unit 10 of the first embodiment can be used to control the temperature of a gaseous substance. That is, the heat exchange unit 10 is configured such that the heat sink fins 16a of the second heat exchanger 16 (which acts as an endothermic air-cooling fin) enter the gaseous material subjected to temperature control. In this state, electricity is applied to the thermoelectric module M, wherein the thermoelectric elements 14 are electrically connected in series between the "heat-dissipating" lower electrode 13 and the "endothermic" upper electrode 15, so that the upper electrode 15 is cooled. The heat is absorbed from the gaseous substance subjected to temperature control by the heat radiating fins 16a of the second heat exchanger 16. In this regard, heat is generated in the lower electrode 13 being heated, but is dissipated via the heat radiating fins 11a of the first heat exchanger 11.
使用第一實施例之熱交換單元10,可能藉由以下程序量測構成一效能評估基準之最大吸熱(heat-absorption或endothermic)值Qmax。基於熱交換單元10製造測試實例A1至A3、B1至B4及C1至C3。如圖3中所示,使用絕熱盒X將熱交換單元10(亦即,熱交換單元之測試實例A1-A3、B1-B4及C1-C3)設置於該盒之開口處。Using the heat exchange unit 10 of the first embodiment, it is possible to measure the maximum heat-absorption or endothermic value Qmax constituting a performance evaluation reference by the following procedure. Test examples A1 to A3, B1 to B4, and C1 to C3 were fabricated based on the heat exchange unit 10. As shown in Fig. 3, the heat exchange unit 10 (i.e., test examples A1-A3, B1-B4, and C1-C3 of the heat exchange unit) was placed at the opening of the box using the heat insulating box X.
以使第二熱交換器16(充當一吸熱器)之散熱鰭片16a安置於絕熱盒X內,而第一熱交換器11(充當一散熱器)之散熱鰭片11a安置於絕熱盒X外的方式將熱交換單元10設置於絕熱盒X中,其中熱量自絕熱盒X之內部傳遞至外部。將一充當一產生一指定發熱值之虛擬熱源的加熱器H配置於絕熱盒X內。The heat dissipating fins 16a of the second heat exchanger 16 (serving as a heat sink) are disposed in the heat insulating box X, and the heat dissipating fins 11a of the first heat exchanger 11 (serving as a heat sink) are disposed outside the heat insulating box X. The heat exchange unit 10 is disposed in the heat insulating box X, in which heat is transferred from the inside of the heat insulating box X to the outside. A heater H serving as a virtual heat source for generating a specified heating value is disposed in the heat insulating box X.
驅動熱交換單元10以量測一最大發熱值(W)(在此值下,絕熱盒X之內部溫度與外部溫度一致),以作為最大吸熱值Qmax。量測結果展示,熱交換單元A1指示Qmax=113W,熱交換單元A2指示Qmax=114W,且熱交換單元A3指示Qmax=113W。另外,熱交換單元B1指示Qmax=116W,熱交換單元B2指示Qmax=115W,熱交換單元B3指示Qmax=114W,且熱交換單元B4指示Qmax=115W。此外,熱交換單元C1指示Qmax=110W,熱交換單元C2指示Qmax=111W,且熱交換單元C3指示Qmax=110W。The heat exchange unit 10 is driven to measure a maximum heat generation value (W) at which the internal temperature of the heat insulating box X coincides with the external temperature as the maximum heat absorption value Qmax. The measurement results show that the heat exchange unit A1 indicates Qmax = 113 W, the heat exchange unit A2 indicates Qmax = 114 W, and the heat exchange unit A3 indicates Qmax = 113 W. In addition, the heat exchange unit B1 indicates Qmax=116W, the heat exchange unit B2 indicates Qmax=115W, the heat exchange unit B3 indicates Qmax=114W, and the heat exchange unit B4 indicates Qmax=115W. Further, the heat exchange unit C1 indicates Qmax=110W, the heat exchange unit C2 indicates Qmax=111W, and the heat exchange unit C3 indicates Qmax=110W.
在上文中,製造熱交換單元A1,以使得由氧化鋁(Al2 O3 )粉末組成之填充劑分散於聚醯亞胺樹脂薄片中,從而形成具有15μm厚度之絕緣層12及17。製造熱交換單元A2,以使得由氧化鋁(Al2 O3 )粉末組成之填充劑分散於塗漆聚醯亞胺樹脂中,從而形成具有15μm厚度之絕緣層12及17。製造熱交換單元A3,以使得由氧化鋁(Al2 O3 )粉末組成之填充劑分散於環氧樹脂薄片中,從而形成具有20μm厚度之絕緣層12及17。In the above, the heat exchange unit A1 was fabricated such that a filler composed of alumina (Al 2 O 3 ) powder was dispersed in the polyimide film to form insulating layers 12 and 17 having a thickness of 15 μm. The heat exchange unit A2 was fabricated such that a filler composed of alumina (Al 2 O 3 ) powder was dispersed in the lacquered polyimide resin to form insulating layers 12 and 17 having a thickness of 15 μm. The heat exchange unit A3 was fabricated such that a filler composed of alumina (Al 2 O 3 ) powder was dispersed in the epoxy resin sheet to form insulating layers 12 and 17 having a thickness of 20 μm.
另外,製造熱交換單元B1,以使得由氮化鋁(AlN)粉末組成之填充劑分散於環氧樹脂薄片中,從而形成具有20μm厚度之絕緣層12及17。製造熱交換單元B2,以使得由氧化鋁(Al2 O3 )粉末組成之填充劑分散於塗漆環氧樹脂中,從而形成具有20μm厚度之絕緣層12及17。製造熱交換單元B3,以使得由氧化鎂(MgO)粉末組成之填充劑分散於塗漆環氧樹脂中,從而形成具有20μm厚度之絕緣層12及17。製造熱交換單元B4,以使得由碳化矽(SiC)粉末組成之填充劑分散於塗漆環氧樹脂中,從而形成具有20μm厚度之絕緣層12及17。Further, the heat exchange unit B1 was fabricated such that a filler composed of aluminum nitride (AlN) powder was dispersed in the epoxy resin sheet, thereby forming insulating layers 12 and 17 having a thickness of 20 μm. The heat exchange unit B2 was fabricated such that a filler composed of alumina (Al 2 O 3 ) powder was dispersed in the paint epoxy resin to form insulating layers 12 and 17 having a thickness of 20 μm. The heat exchange unit B3 was fabricated such that a filler composed of magnesium oxide (MgO) powder was dispersed in the paint epoxy resin to form insulating layers 12 and 17 having a thickness of 20 μm. The heat exchange unit B4 was fabricated such that a filler composed of cerium carbide (SiC) powder was dispersed in the lacquer epoxy resin to form insulating layers 12 and 17 having a thickness of 20 μm.
此外,製造熱交換單元C1,以使得由氧化鋁(Al2 O3 )粉末組成之填充劑分散於在10μm厚之防蝕鋁層上的聚醯亞胺樹脂薄片中,從而形成具有100μm厚度之絕緣層12及17。製造熱交換單元C2,以使得由氧化鋁(Al2 O3 )粉末組成之填充劑分散於在10μm厚之防蝕鋁層上的環氧樹脂薄片中,從而形成具有50μm厚度之絕緣層12及17。製造熱交換單元C3,以使得由氧化鋁(Al2 O3 )粉末組成之填充劑分散於在10μm厚之防蝕鋁層上的塗漆環氧樹脂中,從而形成具有50μm厚度之絕緣層12及17。Further, the heat exchange unit C1 was fabricated such that a filler composed of alumina (Al 2 O 3 ) powder was dispersed in a polyimide film of a 10 μm thick alumite layer to form an insulation having a thickness of 100 μm. Layers 12 and 17. The heat exchange unit C2 was fabricated such that a filler composed of alumina (Al 2 O 3 ) powder was dispersed in an epoxy resin sheet on a 10 μm thick alumite layer, thereby forming insulating layers 12 and 17 having a thickness of 50 μm. . Manufacturing a heat exchange unit C3 such that a filler composed of alumina (Al 2 O 3 ) powder is dispersed in a painted epoxy resin on a 10 μm thick alumite layer to form an insulating layer 12 having a thickness of 50 μm and 17.
基於熱交換單元A1、A2及A3藉由改變毗鄰絕緣層12之第一熱交換器11之表面上及毗鄰絕緣層17之第二熱交換器16之表面上的表面粗糙度Ra來製造熱交換單元A11至A19、A21至A29及A31至A39。相對於使用表面粗糙度Ra之不同值的熱交換單元A11-A19、A21-A29及A31-A39量測耐受電壓WS。The heat exchange is performed based on the heat exchange units A1, A2, and A3 by changing the surface roughness Ra on the surface of the first heat exchanger 11 adjacent to the insulating layer 12 and on the surface of the second heat exchanger 16 adjacent to the insulating layer 17. Units A11 to A19, A21 to A29, and A31 to A39. The withstand voltage WS is measured with respect to the heat exchange units A11-A19, A21-A29, and A31-A39 using different values of the surface roughness Ra.
具體言之,相對於熱交換單元A1改變(毗鄰絕緣層12之第一熱交換器11之表面上及毗鄰絕緣層17之第二熱交換器16之表面上的)表面粗糙度Ra,使得熱交換單元A11具有0.3μm之表面粗糙度,熱交換單元A12具有0.5μm之表面粗糙度,熱交換單元A13具有1.0μm之表面粗糙度,熱交換單元A14具有1.6μm之表面粗糙度,熱交換單元A15具有2.2μm之表面粗糙度,熱交換單元A16具有3.2μm之表面粗糙度,熱交換單元A17具有4.4μm之表面粗糙度,熱交換單元A18具有4.7μm之表面粗糙度,且熱交換單元A19具有5.1μm之表面粗糙度。另外,基於熱交換單元A1製造一具有0.07μm之表面粗糙度的熱交換單元A1a及一具有0.1μm之表面粗糙度的熱交換單元A1b,且對耐受電壓WS進行量測。量測結果展示於表1-1中,其中絕緣層12(17)為一15μm厚之聚醯亞胺薄片,且填充劑由氧化鋁(Al2 O3 )組成。Specifically, the surface roughness Ra (adjacent to the surface of the first heat exchanger 11 adjacent to the insulating layer 12 and the surface of the second heat exchanger 16 adjacent to the insulating layer 17) is changed with respect to the heat exchange unit A1, so that heat The exchange unit A11 has a surface roughness of 0.3 μm, the heat exchange unit A12 has a surface roughness of 0.5 μm, the heat exchange unit A13 has a surface roughness of 1.0 μm, the heat exchange unit A14 has a surface roughness of 1.6 μm, and the heat exchange unit A15 has a surface roughness of 2.2 μm, heat exchange unit A16 has a surface roughness of 3.2 μm, heat exchange unit A17 has a surface roughness of 4.4 μm, heat exchange unit A18 has a surface roughness of 4.7 μm, and heat exchange unit A19 It has a surface roughness of 5.1 μm. Further, a heat exchange unit A1a having a surface roughness of 0.07 μm and a heat exchange unit A1b having a surface roughness of 0.1 μm were produced based on the heat exchange unit A1, and the withstand voltage WS was measured. The measurement results are shown in Table 1-1, in which the insulating layer 12 (17) is a 15 μm thick polyimide film, and the filler is composed of alumina (Al 2 O 3 ).
另外,相對於熱交換單元A2改變表面粗糙度Ra,使得熱交換單元A21具有0.3μm之表面粗糙度,熱交換單元A22具有0.5μm之表面粗糙度,熱交換單元A23具有1.0μm之表面粗糙度,熱交換單元A24具有1.3μm之表面粗糙度,熱交換單元A25具有2.4μm之表面粗糙度,熱交換單元A26具有3.2μm之表面粗糙度,熱交換單元A27具有4.3μm之表面粗糙度,熱交換單元A28具有4.7μm之表面粗糙度,且熱交換單元A29具有5.1μm之表面粗糙度。另外,基於熱交換單元A2製造一具有0.07μm之表面粗糙度的熱交換單元A2a及一具有0.1μm之表面粗糙度的熱交換單元A2b,且對耐受電壓WS進行量測。量測結果展示於表1-2中,其中絕緣層12(17)為一15μm厚之聚醯亞胺清漆,且填充劑由氧化鋁(Al2 O3 )組成。Further, the surface roughness Ra is changed with respect to the heat exchange unit A2 so that the heat exchange unit A21 has a surface roughness of 0.3 μm, the heat exchange unit A22 has a surface roughness of 0.5 μm, and the heat exchange unit A23 has a surface roughness of 1.0 μm. The heat exchange unit A24 has a surface roughness of 1.3 μm, the heat exchange unit A25 has a surface roughness of 2.4 μm, the heat exchange unit A26 has a surface roughness of 3.2 μm, and the heat exchange unit A27 has a surface roughness of 4.3 μm, heat. The exchange unit A28 has a surface roughness of 4.7 μm, and the heat exchange unit A29 has a surface roughness of 5.1 μm. Further, a heat exchange unit A2a having a surface roughness of 0.07 μm and a heat exchange unit A2b having a surface roughness of 0.1 μm were produced based on the heat exchange unit A2, and the withstand voltage WS was measured. The measurement results are shown in Table 1-2, in which the insulating layer 12 (17) is a 15 μm thick polyimine varnish, and the filler is composed of alumina (Al 2 O 3 ).
此外,相對於熱交換單元A3改變表面粗糙度Ra,使得熱交換單元A31具有0.3μm之表面粗糙度,熱交換單元A32具有0.5μm之表面粗糙度,熱交換單元A33具有1.0μm之表面粗糙度,熱交換單元A34具有1.6μm之表面粗糙度,熱交換單元A35具有2.2μm之表面粗糙度,熱交換單元A36具有3.2μm之表面粗糙度,熱交換單元A37具有4.4μm之表面粗糙度,熱交換單元A38具有4.7μm之表面粗糙度,且熱交換單元A39具有5.0μm之表面粗糙度。另外,基於熱交換單元A3製造一具有0.07μm之表面粗糙度的熱交換單元A3a及一具有0.1μm之表面粗糙度的熱交換單元A3b,且對耐受電壓WS進行量測。量測結果展示於表1-3中,其中絕緣層12(17)為一20μm厚之環氧薄片,且填充劑由氧化鋁(Al2 O3 )組成。Further, the surface roughness Ra is changed with respect to the heat exchange unit A3 such that the heat exchange unit A31 has a surface roughness of 0.3 μm, the heat exchange unit A32 has a surface roughness of 0.5 μm, and the heat exchange unit A33 has a surface roughness of 1.0 μm. The heat exchange unit A34 has a surface roughness of 1.6 μm, the heat exchange unit A35 has a surface roughness of 2.2 μm, the heat exchange unit A36 has a surface roughness of 3.2 μm, and the heat exchange unit A37 has a surface roughness of 4.4 μm, heat. The exchange unit A38 has a surface roughness of 4.7 μm, and the heat exchange unit A39 has a surface roughness of 5.0 μm. Further, a heat exchange unit A3a having a surface roughness of 0.07 μm and a heat exchange unit A3b having a surface roughness of 0.1 μm were produced based on the heat exchange unit A3, and the withstand voltage WS was measured. The measurement results are shown in Tables 1-3, in which the insulating layer 12 (17) is a 20 μm thick epoxy sheet, and the filler is composed of alumina (Al 2 O 3 ).
如圖4中所示,使用毗鄰絕緣層12(17)之熱交換器11(16)執行對耐受電壓WS之量測,電極13(15)係以指定圖案形成於絕緣層12(17)上,其中將複數個探針P安置於電極13(15)之指定位置處且接著使其與電極13(15)接觸。將一指定電壓V施加至該等探針P歷時五秒鐘以便在漏電流超過5mA時量測耐受電壓WS。As shown in FIG. 4, the measurement of the withstand voltage WS is performed using the heat exchanger 11 (16) adjacent to the insulating layer 12 (17), and the electrode 13 (15) is formed in the insulating layer 12 (17) in a prescribed pattern. Above, a plurality of probes P are placed at specified positions of the electrodes 13 (15) and then brought into contact with the electrodes 13 (15). A specified voltage V was applied to the probes P for five seconds to measure the withstand voltage WS when the leakage current exceeded 5 mA.
在圖5之圖式上標繪表1-1、表1-2及表1-3中的關於熱交換單元A11-A19、A21-A29及A31-A39之量測結果,圖5之圖式之水平軸表示表面粗糙度Ra(μm)且圖5之圖式之垂直軸表示耐受電壓WS(kV),從而繪製量測曲線(或斷線)A1、A2及A3。圖5及表1-1至表1-3中所示之以上量測結果清楚地展示,耐受電壓WS在表面粗糙度Ra小於4.7μm時良好,但WS在表面粗糙度Ra超過4.7μm時迅速減小。因此,熱交換器11(16)之表面粗糙度Ra較佳小於4.7μm。The measurement results of the heat exchange units A11-A19, A21-A29, and A31-A39 in Table 1-1, Table 1-2, and Table 1-3 are plotted on the graph of FIG. 5, and the pattern of FIG. 5 is plotted. The horizontal axis represents the surface roughness Ra (μm) and the vertical axis of the graph of Fig. 5 represents the withstand voltage WS (kV), thereby plotting the measurement curves (or broken lines) A1, A2, and A3. The above measurement results shown in FIG. 5 and Table 1-1 to Table 1-3 clearly show that the withstand voltage WS is good when the surface roughness Ra is less than 4.7 μm, but when the surface roughness Ra exceeds 4.7 μm. Decrease rapidly. Therefore, the surface roughness Ra of the heat exchanger 11 (16) is preferably less than 4.7 μm.
接下來,基於熱交換單元B1、B2、B3及B4藉由改變毗鄰絕緣層12之第一熱交換器11之表面上及毗鄰絕緣層17之第二熱交換器16之表面上的表面粗糙度Ra來製造熱交換單元B11至B19、B21至B29、B31至B39及B41至B49。相對於使用表面粗糙度Ra之不同值的熱交換單元B11-B19、B21-B29、B31-B39及B41-B49量測耐受電壓WS。Next, the surface roughness on the surface of the first heat exchanger 11 adjacent to the insulating layer 12 and on the surface of the second heat exchanger 16 adjacent to the insulating layer 17 is changed based on the heat exchange units B1, B2, B3, and B4. Ra manufactures heat exchange units B11 to B19, B21 to B29, B31 to B39, and B41 to B49. The withstand voltage WS is measured with respect to the heat exchange units B11-B19, B21-B29, B31-B39, and B41-B49 using different values of the surface roughness Ra.
具體言之,相對於熱交換單元B1改變(毗鄰絕緣層12之第一熱交換器11之表面上及毗鄰絕緣層17之第二熱交換器16之表面上的)表面粗糙度Ra,使得熱交換單元B11具有0.3μm之表面粗糙度,熱交換單元B12具有0.5μm之表面粗糙度,熱交換單元B13具有1.0μm之表面粗糙度,熱交換單元B14具有1.6μm之表面粗糙度,熱交換單元B15具有2.2μm之表面粗糙度,熱交換單元B16具有3.2μm之表面粗糙度,熱交換單元B17具有4.4μm之表面粗糙度,熱交換單元B18具有4.7μm之表面粗糙度,且熱交換單元B19具有5.2μm之表面粗糙度。另外,基於熱交換單元B1製造一具有0.07μm之表面粗糙度的熱交換單元B1a及一具有0.1μm之表面粗糙度的熱交換單元B1b,且對耐受電壓WS進行量測。量測結果展示於表2-1中,其中絕緣層12(17)為一20μm厚之環氧薄片,且填充劑由氮化鋁(AlN)組成。Specifically, the surface roughness Ra of the surface of the first heat exchanger 11 adjacent to the insulating layer 12 and adjacent to the surface of the second heat exchanger 16 of the insulating layer 17 is changed with respect to the heat exchange unit B1, so that heat The exchange unit B11 has a surface roughness of 0.3 μm, the heat exchange unit B12 has a surface roughness of 0.5 μm, the heat exchange unit B13 has a surface roughness of 1.0 μm, and the heat exchange unit B14 has a surface roughness of 1.6 μm, and the heat exchange unit B15 has a surface roughness of 2.2 μm, heat exchange unit B16 has a surface roughness of 3.2 μm, heat exchange unit B17 has a surface roughness of 4.4 μm, heat exchange unit B18 has a surface roughness of 4.7 μm, and heat exchange unit B19 It has a surface roughness of 5.2 μm. Further, a heat exchange unit B1a having a surface roughness of 0.07 μm and a heat exchange unit B1b having a surface roughness of 0.1 μm were produced based on the heat exchange unit B1, and the withstand voltage WS was measured. The measurement results are shown in Table 2-1, in which the insulating layer 12 (17) is a 20 μm thick epoxy sheet, and the filler is composed of aluminum nitride (AlN).
另外,相對於熱交換單元B2改變表面粗糙度Ra,使得熱交換單元B21具有0.3μm之表面粗糙度,熱交換單元B22具有0.5μm之表面粗糙度,熱交換單元B23具有1.0μm之表面粗糙度,熱交換單元B24具有1.6μm之表面粗糙度,熱交換單元B25具有2.1μm之表面粗糙度,熱交換單元B26具有3.3μm之表面粗糙度,熱交換單元B27具有4.4μm之表面粗糙度,熱交換單元B28具有4.7μm之表面粗糙度,且熱交換單元B29具有5.1μm之表面粗糙度。另外,基於熱交換單元B2製造一具有0.07μm之表面粗糙度的熱交換單元B2a及一具有0.1μm之表面粗糙度的熱交換單元B2b,且對耐受電壓WS進行量測。量測結果展示於表2-2中,其中絕緣層12(17)為一20μm厚之環氧清漆,且填充劑由氧化鋁(Al2 O3 )組成。Further, the surface roughness Ra is changed with respect to the heat exchange unit B2 such that the heat exchange unit B21 has a surface roughness of 0.3 μm, the heat exchange unit B22 has a surface roughness of 0.5 μm, and the heat exchange unit B23 has a surface roughness of 1.0 μm. The heat exchange unit B24 has a surface roughness of 1.6 μm, the heat exchange unit B25 has a surface roughness of 2.1 μm, the heat exchange unit B26 has a surface roughness of 3.3 μm, and the heat exchange unit B27 has a surface roughness of 4.4 μm, heat. The exchange unit B28 has a surface roughness of 4.7 μm, and the heat exchange unit B29 has a surface roughness of 5.1 μm. Further, a heat exchange unit B2a having a surface roughness of 0.07 μm and a heat exchange unit B2b having a surface roughness of 0.1 μm were produced based on the heat exchange unit B2, and the withstand voltage WS was measured. The measurement results are shown in Table 2-2, in which the insulating layer 12 (17) is a 20 μm thick epoxy varnish, and the filler is composed of alumina (Al 2 O 3 ).
此外,相對於熱交換單元B3改變表面粗糙度Ra,使得熱交換單元B31具有0.3μm之表面粗糙度,熱交換單元B32具有0.5μm之表面粗糙度,熱交換單元B33具有1.0μm之表面粗糙度,熱交換單元B34具有1.6μm之表面粗糙度,熱交換單元B35具有2.2μm之表面粗糙度,熱交換單元B36具有3.3μm之表面粗糙度,熱交換單元B37具有4.5μm之表面粗糙度,熱交換單元B38具有4.7μm之表面粗糙度,且熱交換單元B39具有5.1μm之表面粗糙度。另外,基於熱交換單元B3製造一具有0.07μm之表面粗糙度的熱交換單元B3a及一具有0.1μm之表面粗糙度的熱交換單元B3b,且對耐受電壓WS進行量測。量測結果展示於表2-3中,其中絕緣層12(17)為一20μm厚之環氧清漆,且填充劑由氧化鎂(MgO)組成。Further, the surface roughness Ra is changed with respect to the heat exchange unit B3 such that the heat exchange unit B31 has a surface roughness of 0.3 μm, the heat exchange unit B32 has a surface roughness of 0.5 μm, and the heat exchange unit B33 has a surface roughness of 1.0 μm. The heat exchange unit B34 has a surface roughness of 1.6 μm, the heat exchange unit B35 has a surface roughness of 2.2 μm, the heat exchange unit B36 has a surface roughness of 3.3 μm, and the heat exchange unit B37 has a surface roughness of 4.5 μm, heat. The exchange unit B38 has a surface roughness of 4.7 μm, and the heat exchange unit B39 has a surface roughness of 5.1 μm. Further, a heat exchange unit B3a having a surface roughness of 0.07 μm and a heat exchange unit B3b having a surface roughness of 0.1 μm were produced based on the heat exchange unit B3, and the withstand voltage WS was measured. The measurement results are shown in Table 2-3, in which the insulating layer 12 (17) is a 20 μm thick epoxy varnish, and the filler is composed of magnesium oxide (MgO).
此外,相對於熱交換單元B4改變表面粗糙度Ra,使得熱交換單元B41具有0.3μm之表面粗糙度,熱交換單元B42具有0.5μm之表面粗糙度,熱交換單元B43具有1.0μm之表面粗糙度,熱交換單元B44具有1.6μm之表面粗糙度,熱交換單元B45具有2.2μm之表面粗糙度,熱交換單元B46具有3.4μm之表面粗糙度,熱交換單元B47具有4.5μm之表面粗糙度,熱交換單元B48具有4.7μm之表面粗糙度,且熱交換單元B49具有5.1μm之表面粗糙度。另外,基於熱交換單元B4製造一具有0.07μm之表面粗糙度的熱交換單元B4a及一具有0.1μm之表面粗糙度的熱交換單元B4b,且對耐受電壓WS進行量測。量測結果展示於表2-4中,其中絕緣層12(17)為一20μm厚之環氧清漆,且填充劑由碳化矽(SiC)組成。Further, the surface roughness Ra is changed with respect to the heat exchange unit B4 such that the heat exchange unit B41 has a surface roughness of 0.3 μm, the heat exchange unit B42 has a surface roughness of 0.5 μm, and the heat exchange unit B43 has a surface roughness of 1.0 μm. The heat exchange unit B44 has a surface roughness of 1.6 μm, the heat exchange unit B45 has a surface roughness of 2.2 μm, the heat exchange unit B46 has a surface roughness of 3.4 μm, and the heat exchange unit B47 has a surface roughness of 4.5 μm, heat. The exchange unit B48 has a surface roughness of 4.7 μm, and the heat exchange unit B49 has a surface roughness of 5.1 μm. Further, a heat exchange unit B4a having a surface roughness of 0.07 μm and a heat exchange unit B4b having a surface roughness of 0.1 μm were produced based on the heat exchange unit B4, and the withstand voltage WS was measured. The measurement results are shown in Tables 2-4, in which the insulating layer 12 (17) is a 20 μm thick epoxy varnish, and the filler is composed of tantalum carbide (SiC).
在圖5之圖式上標繪表2-1、表2-2、表2-3及表2-4中的關於熱交換單元B11-B19、B21-B29、B31-B39及B41-B49之量測結果,從而繪製量測曲線(或斷線)B1、B2、B3及B4。圖5及表2-1至表2-4中所示之以上量測結果清楚地展示,耐受電壓WS在表面粗糙度Ra小於4.7μm時良好,但WS在表面粗糙度Ra超過4.7μm時迅速減小。因此,熱交換器11(16)之表面粗糙度Ra較佳小於4.7μm。The heat exchange units B11-B19, B21-B29, B31-B39 and B41-B49 in Table 2-1, Table 2-2, Table 2-3 and Table 2-4 are plotted on the graph of Fig. 5. Measure the results to plot the measured curves (or broken lines) B1, B2, B3, and B4. The above measurement results shown in FIG. 5 and Table 2-1 to Table 2-4 clearly show that the withstand voltage WS is good when the surface roughness Ra is less than 4.7 μm, but when the surface roughness Ra exceeds 4.7 μm. Decrease rapidly. Therefore, the surface roughness Ra of the heat exchanger 11 (16) is preferably less than 4.7 μm.
接下來,基於熱交換單元C1、C2及C3藉由改變毗鄰絕緣層12之第一熱交換器11之表面上及毗鄰絕緣層17之第二熱交換器16之表面上的表面粗糙度Ra來製造熱交換單元C11至C19、C21至C29及C31至C39。相對於使用表面粗糙度Ra之不同值的熱交換單元C11-C19、C21-C29及C31-C39量測耐受電壓WS。Next, based on the heat exchange units C1, C2, and C3, the surface roughness Ra on the surface of the first heat exchanger 11 adjacent to the insulating layer 12 and the surface of the second heat exchanger 16 adjacent to the insulating layer 17 is changed. The heat exchange units C11 to C19, C21 to C29, and C31 to C39 are manufactured. The withstand voltage WS is measured with respect to the heat exchange units C11-C19, C21-C29, and C31-C39 using different values of the surface roughness Ra.
具體言之,相對於熱交換單元C1改變(毗鄰絕緣層12之第一熱交換器11之表面上及毗鄰絕緣層17之第二熱交換器16之表面上的)表面粗糙度Ra,使得熱交換單元C11具有0.3μm之表面粗糙度,熱交換單元C12具有0.5μm之表面粗糙度,熱交換單元C13具有1.0μm之表面粗糙度,熱交換單元C14具有1.5μm之表面粗糙度,熱交換單元C15具有2.2μm之表面粗糙度,熱交換單元C16具有3.2μm之表面粗糙度,熱交換單元C17具有4.4μm之表面粗糙度,熱交換單元C18具有4.7μm之表面粗糙度,且熱交換單元C19具有5.1μm之表面粗糙度。另外,基於熱交換單元C1製造一具有0.06μm之表面粗糙度的熱交換單元C1a及一具有0.1μm之表面粗糙度的熱交換單元C1b,且對耐受電壓WS進行量測。量測結果展示於表3-1中,其中絕緣層12(17)為一100μm厚之聚醯亞胺薄片加上一10μm厚之防蝕鋁層,且填充劑由氧化鋁(Al2 O3 )組成。Specifically, the surface roughness Ra of the surface of the first heat exchanger 11 adjacent to the insulating layer 12 and adjacent to the surface of the second heat exchanger 16 of the insulating layer 17 is changed with respect to the heat exchange unit C1, so that heat The exchange unit C11 has a surface roughness of 0.3 μm, the heat exchange unit C12 has a surface roughness of 0.5 μm, the heat exchange unit C13 has a surface roughness of 1.0 μm, the heat exchange unit C14 has a surface roughness of 1.5 μm, and the heat exchange unit C15 has a surface roughness of 2.2 μm, heat exchange unit C16 has a surface roughness of 3.2 μm, heat exchange unit C17 has a surface roughness of 4.4 μm, heat exchange unit C18 has a surface roughness of 4.7 μm, and heat exchange unit C19 It has a surface roughness of 5.1 μm. Further, a heat exchange unit C1a having a surface roughness of 0.06 μm and a heat exchange unit C1b having a surface roughness of 0.1 μm were produced based on the heat exchange unit C1, and the withstand voltage WS was measured. The measurement results are shown in Table 3-1, in which the insulating layer 12 (17) is a 100 μm thick polyimide film plus a 10 μm thick alumite layer, and the filler is made of alumina (Al 2 O 3 ). composition.
另外,相對於熱交換單元C2改變表面粗糙度Ra,使得熱交換單元C21具有0.3μm之表面粗糙度,熱交換單元C22具有0.5μm之表面粗糙度,熱交換單元C23具有1.0μm之表面粗糙度,熱交換單元C24具有1.5μm之表面粗糙度,熱交換單元C25具有2.2μm之表面粗糙度,熱交換單元C26具有3.2μm之表面粗糙度,熱交換單元C27具有4.4μm之表面粗糙度,熱交換單元C28具有4.7μm之表面粗糙度,且熱交換單元C29具有5.1μm之表面粗糙度。另外,基於熱交換單元C2製造一具有0.06μm之表面粗糙度的熱交換單元C2a及一具有0.1μm之表面粗糙度的熱交換單元C2b,且對耐受電壓WS進行量測。量測結果展示於表3-2中,其中絕緣層12(17)為一50μm厚之環氧薄片加上一10μm厚之防蝕鋁層,且填充劑由氧化鋁(Al2 O3 )組成。Further, the surface roughness Ra is changed with respect to the heat exchange unit C2 such that the heat exchange unit C21 has a surface roughness of 0.3 μm, the heat exchange unit C22 has a surface roughness of 0.5 μm, and the heat exchange unit C23 has a surface roughness of 1.0 μm. The heat exchange unit C24 has a surface roughness of 1.5 μm, the heat exchange unit C25 has a surface roughness of 2.2 μm, the heat exchange unit C26 has a surface roughness of 3.2 μm, and the heat exchange unit C27 has a surface roughness of 4.4 μm, which is hot. The exchange unit C28 has a surface roughness of 4.7 μm, and the heat exchange unit C29 has a surface roughness of 5.1 μm. Further, a heat exchange unit C2a having a surface roughness of 0.06 μm and a heat exchange unit C2b having a surface roughness of 0.1 μm were produced based on the heat exchange unit C2, and the withstand voltage WS was measured. The measurement results are shown in Table 3-2, in which the insulating layer 12 (17) is a 50 μm thick epoxy sheet plus a 10 μm thick alumite layer, and the filler consists of alumina (Al 2 O 3 ).
此外,相對於熱交換單元C3改變表面粗糙度Ra,使得熱交換單元C31具有0.3μm之表面粗糙度,熱交換單元C32具有0.5μm之表面粗糙度,熱交換單元C33具有1.0μm之表面粗糙度,熱交換單元C34具有1.6μm之表面粗糙度,熱交換單元C35具有2.2μm之表面粗糙度,熱交換單元C36具有3.2μm之表面粗糙度,熱交換單元C37具有4.4μm之表面粗糙度,熱交換單元C38具有4.7μm之表面粗糙度,且熱交換單元C39具有5.1μm之表面粗糙度。另外,基於熱交換單元C3製造一具有0.06μm之表面粗糙度的熱交換單元C3a及一具有0.1μm之表面粗糙度的熱交換單元C3b,且對耐受電壓WS進行量測。量測結果展示於表3-3中,其中絕緣層12(17)為一50μm厚之環氧清漆加上一10μm厚之防蝕鋁層,且填充劑由氧化鋁(Al2 O3 )組成。Further, the surface roughness Ra is changed with respect to the heat exchange unit C3 so that the heat exchange unit C31 has a surface roughness of 0.3 μm, the heat exchange unit C32 has a surface roughness of 0.5 μm, and the heat exchange unit C33 has a surface roughness of 1.0 μm. The heat exchange unit C34 has a surface roughness of 1.6 μm, the heat exchange unit C35 has a surface roughness of 2.2 μm, the heat exchange unit C36 has a surface roughness of 3.2 μm, and the heat exchange unit C37 has a surface roughness of 4.4 μm, and the heat is The exchange unit C38 has a surface roughness of 4.7 μm, and the heat exchange unit C39 has a surface roughness of 5.1 μm. Further, a heat exchange unit C3a having a surface roughness of 0.06 μm and a heat exchange unit C3b having a surface roughness of 0.1 μm were produced based on the heat exchange unit C3, and the withstand voltage WS was measured. The measurement results are shown in Table 3-3, in which the insulating layer 12 (17) is a 50 μm thick epoxy varnish plus a 10 μm thick alumite layer, and the filler consists of alumina (Al 2 O 3 ).
在圖5之圖式上標繪表3-1、表3-2及表3-3中的關於熱交換單元C11-C19、C21-C29及C31-C39之量測結果,從而繪製量測曲線(或斷線)C1、C2及C3。圖5及表3-1至表3-3中所示之以上量測結果清楚地展示,耐受電壓WS在表面粗糙度Ra小於4.7μm時良好,但WS在表面粗糙度Ra超過4.7μm時迅速減小。因此,熱交換器11(16)之表面粗糙度Ra較佳小於4.7μm。The measurement results of the heat exchange units C11-C19, C21-C29 and C31-C39 in Table 3-1, Table 3-2 and Table 3-3 are plotted on the graph of Fig. 5, thereby plotting the measurement curve (or disconnected) C1, C2 and C3. The above measurement results shown in FIG. 5 and Table 3-1 to Table 3-3 clearly show that the withstand voltage WS is good when the surface roughness Ra is less than 4.7 μm, but when the surface roughness Ra exceeds 4.7 μm. Decrease rapidly. Therefore, the surface roughness Ra of the heat exchanger 11 (16) is preferably less than 4.7 μm.
第一實施例針對由各自充當空氣冷卻散熱片之第一熱交換器11及第二熱交換器16構成之熱交換單元10,此並非一限制;因此,可能使用水冷散熱片。設計第二實施例以使用水冷散熱片作為第一熱交換器及第二熱交換器。The first embodiment is directed to the heat exchange unit 10 constituted by the first heat exchanger 11 and the second heat exchanger 16 each serving as an air cooling fin, which is not a limitation; therefore, it is possible to use a water-cooling fin. The second embodiment was designed to use a water-cooled fin as the first heat exchanger and the second heat exchanger.
將參看圖6A至圖6C描述根據本發明之第二實施例之熱交換單元20。如圖6C中所示,熱交換單元20由以下各者構成:一第一熱交換器(充當一散熱或吸熱之水冷散熱片)21、一形成於第一熱交換器21之表面上的絕緣層22、一安置於絕緣層22上之下部電極(充當一散熱或吸熱電極)23、結合至下部電極23上之複數個熱電元件24、一結合至該等熱電元件24上之上部電極(充當一散熱或吸熱電極)25、一第二熱交換器(充當一散熱或吸熱之水冷散熱片)26,及一形成於第二熱交換器26之表面上的絕緣層27。連接至一對引線的一對端子(均未圖示)形成於下部電極23的一個末端上。The heat exchange unit 20 according to the second embodiment of the present invention will be described with reference to Figs. 6A to 6C. As shown in FIG. 6C, the heat exchange unit 20 is composed of a first heat exchanger (serving as a heat-dissipating or heat-absorbing water-cooling fin) 21, and an insulation formed on the surface of the first heat exchanger 21. a layer 22, a lower electrode disposed on the insulating layer 22 (serving as a heat dissipating or heat absorbing electrode) 23, a plurality of thermoelectric elements 24 bonded to the lower electrode 23, and a plurality of upper electrodes bonded to the thermoelectric elements 24 A heat dissipating or heat absorbing electrode 25, a second heat exchanger (serving as a heat dissipating heat sinking heat sink) 26, and an insulating layer 27 formed on the surface of the second heat exchanger 26. A pair of terminals (none of which are shown) connected to a pair of leads are formed on one end of the lower electrode 23.
一熱電模組M(參見圖8)由該等熱電元件24構成,該等熱電元件經由一接合金屬(諸如,焊料)而以串聯方式電連接於下部電極23與上部電極25之間。A thermoelectric module M (see FIG. 8) is composed of the thermoelectric elements 24, and the thermoelectric elements are electrically connected in series between the lower electrode 23 and the upper electrode 25 via a bonding metal such as solder.
第一熱交換器21及第二熱交換器26各自由具有高熱導率之鋁或鋁合金組成,其中(毗鄰絕緣層22之)第一熱交換器21之表面及(毗鄰絕緣層27之)第二熱交換器26之表面各自經修整而具有5μm或更小之表面粗糙度Ra。另外,複數個通道21a(允許一冷卻介質,亦即水,在指定方向上,亦即自右至左,流過)形成於第一熱交換器21中,而複數個通道26a形成於第二熱交換器26中。如圖7A中所示,複數個安裝孔21b形成於第一熱交換器21之表面上,使得下部電極23與上部電極25不可在該表面上對準。如圖7B中所示,複數個安裝孔26b形成於第二熱交換器26之表面上,使得下部電極23與上部電極25不可在該表面上對準。The first heat exchanger 21 and the second heat exchanger 26 are each composed of aluminum or an aluminum alloy having a high thermal conductivity, wherein (the surface adjacent to the insulating layer 22) the surface of the first heat exchanger 21 and (adjacent to the insulating layer 27) The surfaces of the second heat exchanger 26 are each trimmed to have a surface roughness Ra of 5 μm or less. In addition, a plurality of channels 21a (allowing a cooling medium, that is, water, flowing in a specified direction, that is, from right to left) are formed in the first heat exchanger 21, and a plurality of channels 26a are formed in the second In the heat exchanger 26. As shown in FIG. 7A, a plurality of mounting holes 21b are formed on the surface of the first heat exchanger 21 such that the lower electrode 23 and the upper electrode 25 are not aligned on the surface. As shown in Fig. 7B, a plurality of mounting holes 26b are formed on the surface of the second heat exchanger 26 such that the lower electrode 23 and the upper electrode 25 are not aligned on the surface.
絕緣層22及27各自由聚醯亞胺樹脂、環氧樹脂或防蝕鋁組成,該等絕緣層具有10μm至100μm之厚度。較佳將由具有15μm或更小之平均粒徑的氧化鋁(Al2 O3 )、氮化鋁(AlN)、氧化鎂(MgO)或碳化矽(SiC)組成之填充劑分散至由聚醯亞胺樹脂或環氧樹脂組成之絕緣層22及27中,從而改良熱導率。另外,較佳將分散有填充劑之聚醯亞胺樹脂或環氧樹脂層壓於由防蝕鋁組成之絕緣層22及27上。Each of the insulating layers 22 and 27 is composed of a polyimide resin, an epoxy resin or an alumite, and the insulating layers have a thickness of 10 μm to 100 μm. Preferably, a filler composed of alumina (Al 2 O 3 ), aluminum nitride (AlN), magnesium oxide (MgO) or tantalum carbide (SiC) having an average particle diameter of 15 μm or less is dispersed to the polyruthenium. The insulating layer 22 and 27 are composed of an amine resin or an epoxy resin to improve the thermal conductivity. Further, it is preferred to laminate a polyimine resin or an epoxy resin in which a filler is dispersed on the insulating layers 22 and 27 composed of alumite.
當下部電極23充當一散熱電極時,上部電極25充當一吸熱電極,或當下部電極23充當吸熱電極時,上部電極25充當散熱電極。下部電極23及上部電極25各自由一銅薄膜或一銅合金薄膜組成,該等電極具有70μm至200μm之厚度。下部電極23具有如圖7A中所示之對準圖案,而上部電極25具有如圖7B中所示之對準圖案。下部電極23之每一區段形成為一具有3mm之長長度及1.8mm之短長度的矩形形狀。類似地,上部電極25之每一區段形成為一具有3mm之長長度及1.8mm之短長度的矩形形狀。When the lower electrode 23 functions as a heat radiating electrode, the upper electrode 25 functions as a heat absorbing electrode, or when the lower electrode 23 functions as a heat absorbing electrode, the upper electrode 25 functions as a heat radiating electrode. The lower electrode 23 and the upper electrode 25 are each composed of a copper film or a copper alloy film having a thickness of 70 μm to 200 μm. The lower electrode 23 has an alignment pattern as shown in FIG. 7A, and the upper electrode 25 has an alignment pattern as shown in FIG. 7B. Each section of the lower electrode 23 is formed into a rectangular shape having a length of 3 mm and a short length of 1.8 mm. Similarly, each section of the upper electrode 25 is formed into a rectangular shape having a length of 3 mm and a short length of 1.8 mm.
由P型半導體及N型半導體組成之該等熱電元件24係以使P型半導體與N型半導體交替對準之方式串聯地電連接於下部電極23與上部電極25之間。該等熱電元件24係經由SnSb合金、AuSn合金或SnAgCu合金焊接至下部電極23及上部電極25。對該等熱電元件24之遠端鍍鎳,使得該等熱電元件24可容易地焊接至下部電極23及上部電極25。The thermoelectric elements 24 composed of a P-type semiconductor and an N-type semiconductor are electrically connected in series between the lower electrode 23 and the upper electrode 25 in such a manner that the P-type semiconductor and the N-type semiconductor are alternately aligned. The thermoelectric elements 24 are soldered to the lower electrode 23 and the upper electrode 25 via a SnSb alloy, an AuSn alloy, or a SnAgCu alloy. The distal ends of the thermoelectric elements 24 are nickel plated so that the thermoelectric elements 24 can be easily soldered to the lower electrode 23 and the upper electrode 25.
該等熱電元件24較佳由在室溫下具有高熱電效能的Bi-Te之燒結熱電材料組成。具體言之,較佳使用由Bi-Sb-Te之三元化合物組成之P型半導體及由Bi-Sb-Te-Se之四元化合物組成之N型半導體。在當前實施例中,P型半導體由Bi0.5 Sb1.5 Te3 組成,而N型半導體由Bi1.9 Sb0.1 Te2.6 Se0.4 組成,其中對此等半導體進行液體淬火以便生產箔粉末,箔粉末接著被熱壓以形成塊體,該等塊體接著被切割成各自具有長1.35mm、寬1.35mm及高1.5mm之指定尺寸的小片。The thermoelectric elements 24 are preferably composed of a sintered thermoelectric material of Bi-Te having high thermoelectric efficiency at room temperature. Specifically, a P-type semiconductor composed of a ternary compound of Bi-Sb-Te and an N-type semiconductor composed of a quaternary compound of Bi-Sb-Te-Se are preferably used. In the current embodiment, the P-type semiconductor is composed of Bi 0.5 Sb 1.5 Te 3 and the N-type semiconductor is composed of Bi 1.9 Sb 0.1 Te 2.6 Se 0.4 , wherein the semiconductors are liquid-quenched to produce foil powder, and the foil powder is then The heat is pressed to form a block which is then cut into small pieces each having a specified size of 1.35 mm long, 1.35 mm wide, and 1.5 mm high.
藉由以下程序製造熱交換單元20。The heat exchange unit 20 is manufactured by the following procedure.
首先,製備第一熱交換器21(充當一散熱之水冷散熱片),以使得具有黏著性之絕緣層22形成於該熱交換器之表面上,且複數個通道21a形成於該熱交換器內以允許一冷卻介質(亦即,水)流經該等通道。類似地,製備第二熱交換器26(充當一吸熱之水冷散熱片),以使得具有黏著性之絕緣層27形成於該熱交換器之表面上,且複數個通道26a形成於該熱交換器內以允許一冷卻介質(亦即,水)流經該等通道。另外,預先製備下部電極23(充當一散熱電極)及上部電極25(充當一吸熱電極)。此外,預先製備由P型半導體及N型半導體組成之該等熱電元件24。First, a first heat exchanger 21 (serving as a heat-dissipating water-cooling fin) is prepared such that an adhesive insulating layer 22 is formed on the surface of the heat exchanger, and a plurality of channels 21a are formed in the heat exchanger. To allow a cooling medium (ie, water) to flow through the channels. Similarly, a second heat exchanger 26 (serving as an endothermic water-cooling fin) is prepared such that an adhesive insulating layer 27 is formed on the surface of the heat exchanger, and a plurality of channels 26a are formed in the heat exchanger Internally, a cooling medium (i.e., water) is allowed to flow through the channels. Further, the lower electrode 23 (serving as a heat radiating electrode) and the upper electrode 25 (serving as a heat absorbing electrode) are prepared in advance. Further, the thermoelectric elements 24 composed of a P-type semiconductor and an N-type semiconductor are prepared in advance.
第一熱交換器21及第二熱交換器26各自由具有高熱導率之鋁或鋁合金組成。(毗鄰絕緣層22之)第一熱交換器21之表面及(毗鄰絕緣層27之)第二熱交換器26之表面各自經修整而具有5μm或更小之表面粗糙度Ra。藉由將由Al2 O3 、AlN、MgO或SiC組成之填充劑分散至具有黏著性之聚醯亞胺樹脂層或環氧樹脂層中來形成絕緣層22及27。或者,使用複合層形成該等絕緣層,在該等複合層中,分散有填充劑之聚醯亞胺樹脂層或環氧層係形成於防蝕鋁層上。在此,藉由捲曲薄片形狀之材料來形成絕緣層22及27。或者,將清漆塗覆至薄片形狀之材料,接著將其固化以形成絕緣層22及27。下部電極23及上部電極25各自由一銅薄膜或一銅合金薄膜組成且各自成形成指定電極圖案,該等電極具有70μm至200μm之指定厚度。對P型半導體及N型半導體之遠端(或縱向方向上之相反末端)鍍鎳。The first heat exchanger 21 and the second heat exchanger 26 are each composed of aluminum or an aluminum alloy having a high thermal conductivity. The surface of the first heat exchanger 21 (which is adjacent to the insulating layer 22) and the surface of the second heat exchanger 26 (which is adjacent to the insulating layer 27) are each trimmed to have a surface roughness Ra of 5 μm or less. The insulating layers 22 and 27 are formed by dispersing a filler composed of Al 2 O 3 , AlN, MgO or SiC into an adhesive polyimide or epoxy layer. Alternatively, the insulating layers are formed using a composite layer in which a polyimine resin layer or an epoxy layer in which a filler is dispersed is formed on the alumite layer. Here, the insulating layers 22 and 27 are formed by crimping the material of the sheet shape. Alternatively, the varnish is applied to a sheet-shaped material, which is then cured to form insulating layers 22 and 27. The lower electrode 23 and the upper electrode 25 are each composed of a copper thin film or a copper alloy thin film and each form a predetermined electrode pattern having a specified thickness of 70 μm to 200 μm. The far end (or the opposite end in the longitudinal direction) of the P-type semiconductor and the N-type semiconductor is plated with nickel.
如圖6A中所示,具有圖7A中所示之指定電極圖案的由一銅薄膜或一銅合金薄膜組成之下部電極23結合至第一熱交換器21之絕緣層22上。隨後,如圖6B中所示,在下部電極23上交替對準由P型半導體及N型半導體組成的該等熱電元件24,其中該等熱電元件24之下端經由一焊接合金(例如,SnSb合金、AuSn合金及SnAgCu合金)而附接至下部電極23上。另外,具有圖7B中所示之指定電極圖案的由一銅薄膜或一銅合金薄膜組成之上部電極25安置於該等熱電元件24之上端上。As shown in FIG. 6A, the lower electrode 23 composed of a copper film or a copper alloy film having the specified electrode pattern shown in FIG. 7A is bonded to the insulating layer 22 of the first heat exchanger 21. Subsequently, as shown in FIG. 6B, the thermoelectric elements 24 composed of a P-type semiconductor and an N-type semiconductor are alternately aligned on the lower electrode 23, wherein the lower ends of the thermoelectric elements 24 are via a solder alloy (for example, a SnSb alloy) The AuSn alloy and the SnAgCu alloy are attached to the lower electrode 23. Further, an upper electrode 25 composed of a copper film or a copper alloy film having the specified electrode pattern shown in Fig. 7B is disposed on the upper ends of the thermoelectric elements 24.
此後,經由一焊接合金(例如,SnSb合金、AuSn合金及SnAgCu合金)將上部電極25附接至該等熱電元件24之上端。因此,由P型半導體及N型半導體組成的該等熱電元件24交替對準且以串聯方式電連接於下部電極23與上部電極25之間。Thereafter, the upper electrode 25 is attached to the upper ends of the thermoelectric elements 24 via a solder alloy (for example, a SnSb alloy, an AuSn alloy, and a SnAgCu alloy). Therefore, the thermoelectric elements 24 composed of a P-type semiconductor and an N-type semiconductor are alternately aligned and electrically connected in series between the lower electrode 23 and the upper electrode 25.
最後,如圖6C中所示,使第二熱交換器26之絕緣層27與上部電極25接觸;接著,將上部電極25附接至絕緣層27。此完成第二實施例之熱交換單元20之製造。Finally, as shown in FIG. 6C, the insulating layer 27 of the second heat exchanger 26 is brought into contact with the upper electrode 25; then, the upper electrode 25 is attached to the insulating layer 27. This completes the manufacture of the heat exchange unit 20 of the second embodiment.
第二實施例之熱交換單元20可用以控制一指定物件(亦即,需要對溫度加以控制之主體,未圖示)之溫度。舉例而言,將藉由自該指定物件吸收熱量而變暖之熱水供應至「吸熱的」第二熱交換器26之通道26a之入口,而將通道26a之出口連接至該指定物件。另外,將冷水供應至第一熱交換器21之通道21a之入口,而將通道21a之出口用作為排水口。在此狀態下,將電施加至熱電模組M,其中該等熱電元件24以串聯方式電連接於「散熱的」下部電極23與「吸熱的」上部電極25之間,藉以上部電極25經冷卻以經由「吸熱的」第二熱交換器26自供應至該指定物件之熱水吸收熱量,而「散熱的」下部電極23經加熱,使得其熱量經由流經「散熱的」第一熱交換器21之通道21a的冷水耗散。The heat exchange unit 20 of the second embodiment can be used to control the temperature of a specified object (i.e., a body that requires temperature control, not shown). For example, hot water warmed by absorbing heat from the designated object is supplied to the inlet of the passage 26a of the "endothermic" second heat exchanger 26, and the outlet of the passage 26a is connected to the designated object. Further, cold water is supplied to the inlet of the passage 21a of the first heat exchanger 21, and the outlet of the passage 21a is used as a drain. In this state, electricity is applied to the thermoelectric module M, wherein the thermoelectric elements 24 are electrically connected in series between the "heat-dissipating" lower electrode 23 and the "endothermic" upper electrode 25, and are cooled by the upper electrode 25. The heat is absorbed from the hot water supplied to the designated object via the "endothermic" second heat exchanger 26, and the "heat-dissipating" lower electrode 23 is heated so that its heat flows through the "heat-dissipating" first heat exchanger The cold water of channel 21a of 21 is dissipated.
使用第二實施例之熱交換單元20,可能藉由以下程序量測構成一效能評估基準之最大吸熱(heat-absorption或endothermic)值Qmax。基於熱交換單元20製造測試實例D1至D3及E1至E2。如圖8中所示,使用一真空腔室Y將熱交換單元20(亦即,熱交換單元之測試實例D1-D3、E1及E2)設置於其中。接著,將一熱水管(未圖示)連接至第二熱交換器26之通道26a之入口,而將一排水管(未圖示)連接至通道26a之出口。Using the heat exchange unit 20 of the second embodiment, it is possible to measure the maximum heat-absorption or endothermic value Qmax constituting a performance evaluation reference by the following procedure. Test examples D1 to D3 and E1 to E2 were fabricated based on the heat exchange unit 20. As shown in Fig. 8, the heat exchange unit 20 (i.e., test examples D1-D3, E1, and E2 of the heat exchange unit) was placed therein using a vacuum chamber Y. Next, a hot water pipe (not shown) is connected to the inlet of the passage 26a of the second heat exchanger 26, and a drain pipe (not shown) is connected to the outlet of the passage 26a.
另外,將一冷水管(未圖示)連接至第一熱交換器21之通道21a之入口,而將一排水管(未圖示)連接至通道21a之出口。Further, a cold water pipe (not shown) is connected to the inlet of the passage 21a of the first heat exchanger 21, and a drain pipe (not shown) is connected to the outlet of the passage 21a.
驅動熱交換單元20以量測通道21a之入口溫度及出口溫度以及通道26a之入口溫度及出口溫度歷時十分鐘,其中藉由增加入口溫度以便量測出口溫度之平均值來執行量測,從而估計最大吸熱值Qmax。量測結果展示,熱交換單元D1指示Qmax=218W,熱交換單元D2指示Qmax=222W,且熱交換單元D3指示Qmax=220W。另外,熱交換單元E1指示Qmax=225W,且熱交換單元E2指示Qmax=224W。The heat exchange unit 20 is driven to measure the inlet temperature and the outlet temperature of the passage 21a and the inlet temperature and the outlet temperature of the passage 26a for ten minutes, wherein the measurement is performed by increasing the inlet temperature to measure the average value of the outlet temperature, thereby estimating Maximum endothermic value Qmax. The measurement results show that the heat exchange unit D1 indicates Qmax=218W, the heat exchange unit D2 indicates Qmax=222W, and the heat exchange unit D3 indicates Qmax=220W. In addition, the heat exchange unit E1 indicates Qmax = 225W, and the heat exchange unit E2 indicates Qmax = 224W.
在上文中,製造熱交換單元D1,以使得由氧化鋁(Al2 O3 )粉末組成之填充劑分散於在5μm厚之防蝕鋁層上的聚醯亞胺樹脂薄片中,從而形成具有30μm厚度之絕緣層22及27。製造熱交換單元D2,以使得由氧化鋁(Al2 O3 )粉末組成之填充劑分散於在5μm厚之防蝕鋁層上的環氧樹脂薄片中,從而形成具有20μm厚度之絕緣層22及27。製造熱交換單元D3,以使得由氧化鋁(Al2 O3 )粉末組成之填充劑分散於在5μm厚之防蝕鋁層上的塗漆環氧樹脂中,從而形成具有20μm厚度之絕緣層22及27。In the above, the heat exchange unit D1 was fabricated such that a filler composed of alumina (Al 2 O 3 ) powder was dispersed in a polyimide film of a 5 μm thick alumite layer to form a thickness of 30 μm. Insulation layers 22 and 27. The heat exchange unit D2 was fabricated such that a filler composed of alumina (Al 2 O 3 ) powder was dispersed in an epoxy resin sheet on a 5 μm thick alumite layer, thereby forming insulating layers 22 and 27 having a thickness of 20 μm. . Manufacturing a heat exchange unit D3 such that a filler composed of alumina (Al 2 O 3 ) powder is dispersed in a painted epoxy resin on a 5 μm thick alumite layer to form an insulating layer 22 having a thickness of 20 μm and 27.
另外,製造熱交換單元E1,以使得由氧化鎂(MgO)粉末組成之填充劑分散於環氧樹脂薄片中,從而形成具有20μm厚度之絕緣層22及27。製造熱交換單元E2,以使得由碳化矽(SiC)粉末組成之填充劑分散於環氧樹脂薄片中,從而形成具有20μm厚度之絕緣層22及27。Further, the heat exchange unit E1 was fabricated such that a filler composed of magnesium oxide (MgO) powder was dispersed in the epoxy resin sheet to form insulating layers 22 and 27 having a thickness of 20 μm. The heat exchange unit E2 was fabricated such that a filler composed of cerium carbide (SiC) powder was dispersed in the epoxy resin sheet to form insulating layers 22 and 27 having a thickness of 20 μm.
基於熱交換單元D1、D2及D3藉由改變毗鄰絕緣層22之第一熱交換器21之表面上及毗鄰絕緣層27之第二熱交換器26之表面上的表面粗糙度Ra來製造熱交換單元D11至D19、D21至D29及D31至D39。相對於使用表面粗糙度Ra之不同值的熱交換單元D11-D19、D21-D29及D31-D39量測耐受電壓WS。The heat exchange is performed based on the heat exchange units D1, D2, and D3 by changing the surface roughness Ra on the surface of the first heat exchanger 21 adjacent to the insulating layer 22 and on the surface of the second heat exchanger 26 adjacent to the insulating layer 27. Units D11 to D19, D21 to D29, and D31 to D39. The withstand voltage WS is measured with respect to the heat exchange units D11-D19, D21-D29, and D31-D39 using different values of the surface roughness Ra.
具體言之,相對於熱交換單元D1改變(毗鄰絕緣層22之第一熱交換器21之表面上及毗鄰絕緣層27之第二熱交換器26之表面上的)表面粗糙度Ra,使得熱交換單元D11具有0.3μm之表面粗糙度,熱交換單元D12具有0.5μm之表面粗糙度,熱交換單元D13具有1.0μm之表面粗糙度,熱交換單元D14具有1.6μm之表面粗糙度,熱交換單元D15具有2.1μm之表面粗糙度,熱交換單元D16具有3.2μm之表面粗糙度,熱交換單元D17具有4.4μm之表面粗糙度,熱交換單元D18具有4.7μm之表面粗糙度,且熱交換單元D19具有5.1μm之表面粗糙度。另外,基於熱交換單元D1製造一具有0.06μm之表面粗糙度的熱交換單元D1a及一具有0.1μm之表面粗糙度的熱交換單元D1b,且對耐受電壓WS進行量測。量測結果展示於表4-1中,其中絕緣層22(27)為一30μm厚之聚醯亞胺薄片加上一5μm厚之防蝕鋁層,且填充劑由氧化鋁(Al2 O3 )組成。Specifically, the surface roughness Ra (adjacent to the surface of the first heat exchanger 21 adjacent to the insulating layer 22 and the surface of the second heat exchanger 26 adjacent to the insulating layer 27) is changed with respect to the heat exchange unit D1, so that heat The exchange unit D11 has a surface roughness of 0.3 μm, the heat exchange unit D12 has a surface roughness of 0.5 μm, the heat exchange unit D13 has a surface roughness of 1.0 μm, the heat exchange unit D14 has a surface roughness of 1.6 μm, and the heat exchange unit D15 has a surface roughness of 2.1 μm, heat exchange unit D16 has a surface roughness of 3.2 μm, heat exchange unit D17 has a surface roughness of 4.4 μm, heat exchange unit D18 has a surface roughness of 4.7 μm, and heat exchange unit D19 It has a surface roughness of 5.1 μm. Further, a heat exchange unit D1a having a surface roughness of 0.06 μm and a heat exchange unit D1b having a surface roughness of 0.1 μm were produced based on the heat exchange unit D1, and the withstand voltage WS was measured. The measurement results are shown in Table 4-1, in which the insulating layer 22 (27) is a 30 μm thick polyimide film plus a 5 μm thick alumite layer, and the filler is made of alumina (Al 2 O 3 ). composition.
另外,相對於熱交換單元D2改變表面粗糙度Ra,使得熱交換單元D21具有0.3μm之表面粗糙度,熱交換單元D22具有0.5μm之表面粗糙度,熱交換單元D23具有1.0μm之表面粗糙度,熱交換單元D24具有1.6μm之表面粗糙度,熱交換單元D25具有2.1μm之表面粗糙度,熱交換單元D26具有3.2μm之表面粗糙度,熱交換單元D27具有4.4μm之表面粗糙度,熱交換單元D28具有4.7μm之表面粗糙度,且熱交換單元D29具有5.1μm之表面粗糙度。另外,基於熱交換單元D2製造一具有0.06μm之表面粗糙度的熱交換單元D2a及一具有0.1μm之表面粗糙度的熱交換單元D2b,且對耐受電壓WS進行量測。量測結果展示於表4-2中,其中絕緣層22(27)為一20μm厚之環氧薄片加上5μm厚之防蝕鋁層,且填充劑由氧化鋁(Al2 O3 )組成。Further, the surface roughness Ra is changed with respect to the heat exchange unit D2 such that the heat exchange unit D21 has a surface roughness of 0.3 μm, the heat exchange unit D22 has a surface roughness of 0.5 μm, and the heat exchange unit D23 has a surface roughness of 1.0 μm. The heat exchange unit D24 has a surface roughness of 1.6 μm, the heat exchange unit D25 has a surface roughness of 2.1 μm, the heat exchange unit D26 has a surface roughness of 3.2 μm, and the heat exchange unit D27 has a surface roughness of 4.4 μm, heat. The exchange unit D28 has a surface roughness of 4.7 μm, and the heat exchange unit D29 has a surface roughness of 5.1 μm. Further, a heat exchange unit D2a having a surface roughness of 0.06 μm and a heat exchange unit D2b having a surface roughness of 0.1 μm were produced based on the heat exchange unit D2, and the withstand voltage WS was measured. The measurement results are shown in Table 4-2, in which the insulating layer 22 (27) is a 20 μm thick epoxy sheet plus a 5 μm thick alumite layer, and the filler consists of alumina (Al 2 O 3 ).
此外,相對於熱交換單元D3改變表面粗糙度Ra,使得熱交換單元D31具有0.3μm之表面粗糙度,熱交換單元D32具有0.5μm之表面粗糙度,熱交換單元D33具有1.0μm之表面粗糙度,熱交換單元D34具有1.6μm之表面粗糙度,熱交換單元D35具有2.1μm之表面粗糙度,熱交換單元D36具有3.2μm之表面粗糙度,熱交換單元D37具有4.4μm之表面粗糙度,熱交換單元D38具有4.7μm之表面粗糙度,且熱交換單元D39具有5.1μm之表面粗糙度。另外,基於熱交換單元D3製造一具有0.06μm之表面粗糙度的熱交換單元D3a及一具有0.1μm之表面粗糙度的熱交換單元D3b,且對耐受電壓WS進行量測。量測結果展示於表4-3中,其中絕緣層22(27)為一20μm厚之環氧清漆加上一5μm厚之防蝕鋁層,且填充劑由氧化鋁(Al2 O3 )組成。Further, the surface roughness Ra is changed with respect to the heat exchange unit D3 such that the heat exchange unit D31 has a surface roughness of 0.3 μm, the heat exchange unit D32 has a surface roughness of 0.5 μm, and the heat exchange unit D33 has a surface roughness of 1.0 μm. The heat exchange unit D34 has a surface roughness of 1.6 μm, the heat exchange unit D35 has a surface roughness of 2.1 μm, the heat exchange unit D36 has a surface roughness of 3.2 μm, and the heat exchange unit D37 has a surface roughness of 4.4 μm, heat. The exchange unit D38 has a surface roughness of 4.7 μm, and the heat exchange unit D39 has a surface roughness of 5.1 μm. Further, a heat exchange unit D3a having a surface roughness of 0.06 μm and a heat exchange unit D3b having a surface roughness of 0.1 μm were produced based on the heat exchange unit D3, and the withstand voltage WS was measured. The measurement results are shown in Table 4-3, in which the insulating layer 22 (27) is a 20 μm thick epoxy varnish plus a 5 μm thick alumite layer, and the filler consists of alumina (Al 2 O 3 ).
在圖9之圖式上標繪表4-1、表4-2及表4-3中的關於熱交換單元D11-D19、D21-D29及D31-D39之量測結果,圖9之圖式的水平軸表示表面粗糙度Ra(μm)且圖9之圖式的垂直軸表示耐受電壓WS(kV),從而繪製量測曲線(或斷線)D1、D2及D3。圖9及表4-1至表4-3中所示之以上量測結果清楚地展示,耐受電壓WS在表面粗糙度Ra小於4.7μm時良好,但WS在表面粗糙度Ra超過4.7μm時迅速減小。因此,熱交換器21(26)之表面粗糙度Ra較佳小於4.7μm。The measurement results of the heat exchange units D11-D19, D21-D29 and D31-D39 in Table 4-1, Table 4-2 and Table 4-3 are plotted on the graph of Fig. 9, and the pattern of Fig. 9 is plotted. The horizontal axis represents the surface roughness Ra (μm) and the vertical axis of the graph of Fig. 9 represents the withstand voltage WS(kV), thereby plotting the measurement curves (or broken lines) D1, D2, and D3. The above measurement results shown in FIG. 9 and Table 4-1 to Table 4-3 clearly show that the withstand voltage WS is good when the surface roughness Ra is less than 4.7 μm, but when the surface roughness Ra exceeds 4.7 μm. Decrease rapidly. Therefore, the surface roughness Ra of the heat exchanger 21 (26) is preferably less than 4.7 μm.
類似地,相對於熱交換單元E1改變表面粗糙度Ra,使得熱交換單元E11具有0.3μm之表面粗糙度,熱交換單元E12具有0.5μm之表面粗糙度,熱交換單元E13具有1.0μm之表面粗糙度,熱交換單元E14具有1.6μm之表面粗糙度,熱交換單元E15具有2.1μm之表面粗糙度,熱交換單元E16具有3.2μm之表面粗糙度,熱交換單元E17具有4.4μm之表面粗糙度,熱交換單元E18具有4.7μm之表面粗糙度,且熱交換單元E19具有5.1μm之表面粗糙度。另外,基於熱交換單元E1製造一具有0.07μm之表面粗糙度的熱交換單元E1a及一具有0.1μm之表面粗糙度的熱交換單元E1b,且對耐受電壓WS進行量測。量測結果展示於表5-1中,其中絕緣層22(27)為一20μm厚之環氧薄片,且填充劑由氧化鎂(MgO)組成。Similarly, the surface roughness Ra is changed with respect to the heat exchange unit E1 such that the heat exchange unit E11 has a surface roughness of 0.3 μm, the heat exchange unit E12 has a surface roughness of 0.5 μm, and the heat exchange unit E13 has a surface roughness of 1.0 μm. Degree, the heat exchange unit E14 has a surface roughness of 1.6 μm, the heat exchange unit E15 has a surface roughness of 2.1 μm, the heat exchange unit E16 has a surface roughness of 3.2 μm, and the heat exchange unit E17 has a surface roughness of 4.4 μm. The heat exchange unit E18 has a surface roughness of 4.7 μm, and the heat exchange unit E19 has a surface roughness of 5.1 μm. Further, a heat exchange unit E1a having a surface roughness of 0.07 μm and a heat exchange unit E1b having a surface roughness of 0.1 μm were produced based on the heat exchange unit E1, and the withstand voltage WS was measured. The measurement results are shown in Table 5-1, in which the insulating layer 22 (27) is a 20 μm thick epoxy sheet, and the filler is composed of magnesium oxide (MgO).
另外,相對於熱交換單元E2改變表面粗糙度Ra,使得熱交換單元E21具有0.3μm之表面粗糙度,熱交換單元E22具有0.5μm之表面粗糙度,熱交換單元E23具有1.0μm之表面粗糙度,熱交換單元E24具有1.6μm之表面粗糙度,熱交換單元E25具有2.1μm之表面粗糙度,熱交換單元E26具有3.2μm之表面粗糙度,熱交換單元E27具有4.4μm之表面粗糙度,熱交換單元E28具有4.7μm之表面粗糙度,且熱交換單元E29具有5.1μm之表面粗糙度。另外,基於熱交換單元E2製造一具有0.07μm之表面粗糙度的熱交換單元E2a及一具有0.1μm之表面粗糙度的熱交換單元E2b,且對耐受電壓WS進行量測。量測結果展示於表5-2中,其中絕緣層22(27)為一20μm厚之環氧薄片,且填充劑由碳化矽(SiC)組成。Further, the surface roughness Ra is changed with respect to the heat exchange unit E2 so that the heat exchange unit E21 has a surface roughness of 0.3 μm, the heat exchange unit E22 has a surface roughness of 0.5 μm, and the heat exchange unit E23 has a surface roughness of 1.0 μm. The heat exchange unit E24 has a surface roughness of 1.6 μm, the heat exchange unit E25 has a surface roughness of 2.1 μm, the heat exchange unit E26 has a surface roughness of 3.2 μm, and the heat exchange unit E27 has a surface roughness of 4.4 μm, and the heat is The exchange unit E28 has a surface roughness of 4.7 μm, and the heat exchange unit E29 has a surface roughness of 5.1 μm. Further, a heat exchange unit E2a having a surface roughness of 0.07 μm and a heat exchange unit E2b having a surface roughness of 0.1 μm were produced based on the heat exchange unit E2, and the withstand voltage WS was measured. The measurement results are shown in Table 5-2, in which the insulating layer 22 (27) is a 20 μm thick epoxy sheet, and the filler is composed of tantalum carbide (SiC).
在圖9之圖式上標繪表5-1及表5-2中的關於熱交換單元E11-E19及E21-E29之量測結果,從而繪製量測曲線(或斷線)E1及E2。圖9及表5-1及表5-2中所示之以上量測結果清楚地展示,耐受電壓WS在表面粗糙度Ra小於4.7μm時良好,但WS在表面粗糙度Ra超過4.7μm時迅速減小。因此,熱交換器21(26)之表面粗糙度Ra較佳小於4.7μm。The measurement results of the heat exchange units E11-E19 and E21-E29 in Table 5-1 and Table 5-2 are plotted on the graph of Fig. 9 to draw measurement curves (or broken lines) E1 and E2. The above measurement results shown in FIG. 9 and Table 5-1 and Table 5-2 clearly show that the withstand voltage WS is good when the surface roughness Ra is less than 4.7 μm, but when the surface roughness Ra exceeds 4.7 μm. Decrease rapidly. Therefore, the surface roughness Ra of the heat exchanger 21 (26) is preferably less than 4.7 μm.
第一實施例之熱交換單元10及第二實施例之熱交換單元20經設計以使得電極13、15、23及25均勻地形成於熱交換器11、16、21及26之表面上;但當該等熱交換器之表面上的指定區域不允許電極於其上之均勻對準時,可能對準該等電極以便處於該等熱交換器之表面上的指定區域之外。基於此概念來設計本發明之第三實施例。The heat exchange unit 10 of the first embodiment and the heat exchange unit 20 of the second embodiment are designed such that the electrodes 13, 15, 23 and 25 are uniformly formed on the surfaces of the heat exchangers 11, 16, 21 and 26; When the designated areas on the surface of the heat exchangers do not allow for uniform alignment of the electrodes thereon, it is possible to align the electrodes so as to be outside of a designated area on the surface of the heat exchangers. A third embodiment of the present invention is designed based on this concept.
將參看圖10A至圖10C描述根據本發明之第三實施例之熱交換單元30。如圖10C中所示,熱交換單元30由以下各者構成:一第一熱交換器(充當一散熱或吸熱之水冷散熱片)31、形成於第一熱交換器31之表面及背面上之絕緣層32a及32b、一形成於絕緣層32a上之第一下部電極(充當一散熱或吸熱電極)33a、一形成於絕緣層32b上之第一上部電極(充當一散熱或吸熱電極)33b、毗鄰第一下部電極33a之複數個第一熱電元件34a、毗鄰第一上部電極33b之複數個第二熱電元件34b、一毗鄰該等第一熱電元件34a之上端的第二上部電極(充當一散熱或吸熱電極)35a、一毗鄰該等第二熱電元件34b之下端的第二下部電極(充當一散熱或吸熱電極)35b、一第二熱交換器(充當一散熱或吸熱之水冷散熱片)36、一形成於第二熱交換器36之表面上的在第二上部電極35a上方的絕緣層37、一第三熱交換器(充當一散熱或吸熱之散熱片)38,及一在第二下部電極35b之下形成於第三熱交換器38之表面上的絕緣層39。連接至一對引線的一對端子(均未圖示)形成於第一下部電極33a的一個末端上。A heat exchange unit 30 according to a third embodiment of the present invention will be described with reference to Figs. 10A to 10C. As shown in FIG. 10C, the heat exchange unit 30 is composed of a first heat exchanger (serving as a heat-dissipating or heat-absorbing water-cooling fin) 31 formed on the surface and the back surface of the first heat exchanger 31. The insulating layer 32a and 32b, a first lower electrode (serving as a heat dissipating or heat absorbing electrode) 33a formed on the insulating layer 32a, and a first upper electrode (serving as a heat dissipating or heat absorbing electrode) 33b formed on the insulating layer 32b a plurality of first thermoelectric elements 34a adjacent to the first lower electrode 33a, a plurality of second thermoelectric elements 34b adjacent to the first upper electrode 33b, and a second upper electrode adjacent to the upper ends of the first thermoelectric elements 34a (serving a heat dissipating or heat absorbing electrode 35a, a second lower electrode (serving as a heat dissipating or heat absorbing electrode) 35b adjacent to the lower end of the second thermoelectric element 34b, and a second heat exchanger (serving as a heat sink or heat absorbing water cooling fin) 36, an insulating layer 37 formed on the surface of the second heat exchanger 36 above the second upper electrode 35a, a third heat exchanger (serving as a heat sink or heat sinking heat sink) 38, and a The second lower electrode 35b is formed under the third heat exchange An insulating layer 39 on the surface of the device 38. A pair of terminals (none of which are shown) connected to the pair of leads are formed on one end of the first lower electrode 33a.
如圖12中所示,一第一熱電模組M1係由該等第一熱電元件34a構成,該等第一熱電元件34a經由一接合金屬(諸如,焊料)而以串聯方式電連接於第一下部電極33a與第二上部電極35a之間。另外,一第二熱電模組M2係由該等第二熱電元件34b構成,該等第二熱電元件34b經由一接合金屬(諸如,焊料)而以串聯方式電連接於第一上部電極33b與第二下部電極35b之間。As shown in FIG. 12, a first thermoelectric module M1 is composed of the first thermoelectric elements 34a, and the first thermoelectric elements 34a are electrically connected to the first in series via a bonding metal such as solder. The lower electrode 33a is between the lower electrode 35a and the second upper electrode 35a. In addition, a second thermoelectric module M2 is composed of the second thermoelectric elements 34b, and the second thermoelectric elements 34b are electrically connected in series to the first upper electrodes 33b and a second via a bonding metal such as solder. Between the two lower electrodes 35b.
熱交換器31、36及38(充當水冷散熱片)各自由具有高熱導率之鋁或鋁合金組成,其中(毗鄰絕緣層32a及32b之)第一熱交換器31之表面及背面、(毗鄰絕緣層37之)第二熱交換器36之表面及(毗鄰絕緣層39之)第三熱交換器38之表面各自經修整而具有5μm或更小之表面粗糙度Ra。另外,複數個通道31a(允許一冷卻介質,亦即水,在指定方向上,亦即自右至左,流過)形成於第一熱交換器31中。類似地,複數個通道36a形成於第二熱交換器36中,且複數個通道38a形成於第三熱交換器38中。在此,空腔或凹陷係使用工具而形成於經受模製(或鑄造)的熱交換器31、36及38之表面上。為此之故,形成旁通區域31c、36c及38c以防止電極33a、33b、35a及35b形成於熱交換器31、36及38之表面上,如圖11A及圖11B中所示。另外,複數個安裝孔31b、36b及38b形成於熱交換器31、36及38之角落上。The heat exchangers 31, 36 and 38 (acting as water-cooling fins) are each composed of aluminum or an aluminum alloy having a high thermal conductivity, wherein the surface and the back surface of the first heat exchanger 31 (adjacent to the insulating layers 32a and 32b) are adjacent The surface of the second heat exchanger 36 of the insulating layer 37 and the surface of the third heat exchanger 38 (next to the insulating layer 39) are each trimmed to have a surface roughness Ra of 5 μm or less. Further, a plurality of passages 31a (allowing a cooling medium, that is, water, flowing in a specified direction, that is, from right to left) are formed in the first heat exchanger 31. Similarly, a plurality of channels 36a are formed in the second heat exchanger 36, and a plurality of channels 38a are formed in the third heat exchanger 38. Here, the cavity or depression is formed on the surface of the heat exchangers 31, 36 and 38 subjected to molding (or casting) using a tool. For this reason, the bypass regions 31c, 36c, and 38c are formed to prevent the electrodes 33a, 33b, 35a, and 35b from being formed on the surfaces of the heat exchangers 31, 36, and 38 as shown in Figs. 11A and 11B. Further, a plurality of mounting holes 31b, 36b, and 38b are formed at the corners of the heat exchangers 31, 36, and 38.
絕緣層32a、32b、37及39各自由聚醯亞胺樹脂、環氧樹脂或防蝕鋁組成,該等絕緣層具有10μm至100μm之厚度。較佳將由具有15μm或更小之平均粒徑的氧化鋁(Al2 O3 )、氮化鋁(AlN)、氧化鎂(MgO)或碳化矽(SiC)組成之填充劑分散至由聚醯亞胺樹脂或環氧樹脂組成之絕緣層32a、32b、37及39中,從而改良熱導率。另外,較佳將分散有填充劑之聚醯亞胺樹脂或環氧樹脂層壓於由防蝕鋁組成之絕緣層32a、32b、37及39上。The insulating layers 32a, 32b, 37, and 39 are each composed of a polyimide resin, an epoxy resin, or an alumite, and the insulating layers have a thickness of 10 μm to 100 μm. Preferably, a filler composed of alumina (Al 2 O 3 ), aluminum nitride (AlN), magnesium oxide (MgO) or tantalum carbide (SiC) having an average particle diameter of 15 μm or less is dispersed to the polyruthenium. The insulating layer 32a, 32b, 37, and 39 composed of an amine resin or an epoxy resin improves the thermal conductivity. Further, it is preferable to laminate a polyimine resin or an epoxy resin in which a filler is dispersed on the insulating layers 32a, 32b, 37 and 39 composed of alumite.
電極33a、33b、35a及35b各自由一銅薄膜或一銅合金薄膜組成,該等電極具有70μm至200μm之厚度。第一下部電極33a及第一上部電極33b中之每一者具有圖11A中所示之一對準圖案,而第二上部電極35a及第二下部電極35b中之每一者具有圖11B中所示之一對準圖案。電極33a、33b、35a及35b之每一區段形成為具有3mm之長長度及1.8mm之短長度的矩形形狀。另外,鄰近區段之間的最小距離t比每一矩形區段之短長度(例如,1.8mm)短。The electrodes 33a, 33b, 35a, and 35b are each composed of a copper film or a copper alloy film having a thickness of 70 μm to 200 μm. Each of the first lower electrode 33a and the first upper electrode 33b has an alignment pattern shown in FIG. 11A, and each of the second upper electrode 35a and the second lower electrode 35b has the same in FIG. 11B. One of the shown alignment patterns. Each of the segments of the electrodes 33a, 33b, 35a, and 35b is formed into a rectangular shape having a length of 3 mm and a short length of 1.8 mm. Additionally, the minimum distance t between adjacent segments is shorter than the short length (eg, 1.8 mm) of each rectangular segment.
由P型半導體及N型半導體組成之該等第一熱電元件34a係以使P型半導體與N型半導體交替對準之方式串聯地電連接於第一下部電極33a與第二上部電極35a之間。類似地,由P型半導體及N型半導體組成之該等第二熱電元件34b係以使P型半導體與N型半導體交替對準之方式串聯地電連接於第一上部電極33b與第二下部電極35b之間。該等熱電元件34a及34b係經由SnSb合金、AuSn合金或SnAgCu合金焊接至電極33a、33b、35a及35b。對該等熱電元件34a及34b之遠端鍍鎳,使得該等熱電元件34a及34b可容易地焊接至電極33a、33b、35a及35b。The first thermoelectric elements 34a composed of a P-type semiconductor and an N-type semiconductor are electrically connected in series to the first lower electrode 33a and the second upper electrode 35a in such a manner that the P-type semiconductor and the N-type semiconductor are alternately aligned. between. Similarly, the second thermoelectric elements 34b composed of a P-type semiconductor and an N-type semiconductor are electrically connected in series to the first upper electrode 33b and the second lower electrode in such a manner that the P-type semiconductor and the N-type semiconductor are alternately aligned. Between 35b. The thermoelectric elements 34a and 34b are soldered to the electrodes 33a, 33b, 35a, and 35b via a SnSb alloy, an AuSn alloy, or a SnAgCu alloy. The distal ends of the thermoelectric elements 34a and 34b are plated with nickel so that the thermoelectric elements 34a and 34b can be easily soldered to the electrodes 33a, 33b, 35a and 35b.
該等熱電元件34a及34b較佳由在室溫下具有高熱電效能的Bi-Te之燒結熱電材料組成。具體言之,較佳使用由Bi-Sb-Te之三元化合物組成之P型半導體及由Bi-Sb-Te-Se之四元化合物組成之N型半導體。在當前實施例中,P型半導體由Bi0.5 Sb1.5 Te3 組成,而N型半導體由Bi1.9 Sb0.1 Te2.6 Se0.4 組成,其中對此等半導體進行液體淬火以生產箔粉末,箔粉末接著被熱壓以形成塊體,該等塊體接著被切割成各自具有長1.35mm、寬1.35mm及高1.5mm之指定尺寸的小片。The thermoelectric elements 34a and 34b are preferably composed of a sintered thermoelectric material of Bi-Te having high thermoelectric efficiency at room temperature. Specifically, a P-type semiconductor composed of a ternary compound of Bi-Sb-Te and an N-type semiconductor composed of a quaternary compound of Bi-Sb-Te-Se are preferably used. In the current embodiment, the P-type semiconductor is composed of Bi 0.5 Sb 1.5 Te 3 and the N-type semiconductor is composed of Bi 1.9 Sb 0.1 Te 2.6 Se 0.4 , wherein the semiconductors are subjected to liquid quenching to produce foil powder, and the foil powder is then The heat is pressed to form a block which is then cut into small pieces each having a specified size of 1.35 mm long, 1.35 mm wide, and 1.5 mm high.
藉由以下程序製造熱交換單元30。The heat exchange unit 30 is manufactured by the following procedure.
首先,製備第一熱交換器31(充當一吸熱之水冷散熱片),以使得具有黏著性之絕緣層32a及32b形成於該熱交換器之表面及背面上,且複數個通道31a形成於該熱交換器內以允許一冷卻介質(亦即,水)流經該等通道。製備第二熱交換器36(充當一散熱之水冷散熱片),以使得具有黏著性之絕緣層37形成於該熱交換器之表面上,且複數個通道36a形成於該熱交換器內以允許一冷卻介質(亦即,水)流經該等通道。製備第三熱交換器38(充當一散熱之水冷散熱片),以使得具有黏著性之絕緣層39形成於該熱交換器之表面上,且複數個通道38a形成於該熱交換器內以允許一冷卻介質(亦即,水)流經該等通道。另外,預先製備第一下部電極33a、第一上部電極33b、第二上部電極35a及第二下部電極35b。此外,預先製備由P型半導體及N型半導體組成之該等熱電元件34a及34b。First, the first heat exchanger 31 (serving as an endothermic water-cooling fin) is prepared such that the adhesive insulating layers 32a and 32b are formed on the surface and the back surface of the heat exchanger, and a plurality of channels 31a are formed therein. The heat exchanger is configured to allow a cooling medium (i.e., water) to flow through the passages. A second heat exchanger 36 (serving as a heat-dissipating water-cooling fin) is prepared such that an adhesive insulating layer 37 is formed on the surface of the heat exchanger, and a plurality of channels 36a are formed in the heat exchanger to allow A cooling medium (i.e., water) flows through the channels. A third heat exchanger 38 (serving as a heat-dissipating water-cooling fin) is prepared such that an adhesive insulating layer 39 is formed on the surface of the heat exchanger, and a plurality of channels 38a are formed in the heat exchanger to allow A cooling medium (i.e., water) flows through the channels. Further, the first lower electrode 33a, the first upper electrode 33b, the second upper electrode 35a, and the second lower electrode 35b are prepared in advance. Further, the thermoelectric elements 34a and 34b composed of a P-type semiconductor and an N-type semiconductor are prepared in advance.
熱交換器31、36及38各自由具有高熱導率之鋁或鋁合金組成。(毗鄰絕緣層32a及32b之)第一熱交換器31之表面及背面、(毗鄰絕緣層37之)第二熱交換器36之表面及(毗鄰絕緣層39之)第三熱交換器38之表面各自經修整而具有5μm或更小之表面粗糙度Ra。藉由將由Al2 O3 、AlN、MgO或SiC組成之填充劑分散至具有黏著性之聚醯亞胺樹脂層或環氧樹脂層中來形成絕緣層32a、32b、37及39。或者,使用複合層形成該等絕緣層,在該等複合層中,分散有填充劑之聚醯亞胺樹脂層或環氧層係形成於防蝕鋁層上。在此,藉由捲曲薄片形狀之材料來形成絕緣層32a、32b、37及39。或者,將清漆塗覆至薄片形狀之材料,接著將其固化以形成絕緣層32a、32b、37及39。電極33a、33b、35a及35b各自由一銅薄膜或一銅合金薄膜組成且各自成形成指定電極圖案,該等電極具有70μm至200μm之指定厚度。對P型半導體及N型半導體之遠端(或縱向方向上之相反末端)鍍鎳。The heat exchangers 31, 36 and 38 are each composed of aluminum or an aluminum alloy having a high thermal conductivity. The surface and the back surface of the first heat exchanger 31 (adjacent to the insulating layers 32a and 32b), the surface of the second heat exchanger 36 (which is adjacent to the insulating layer 37), and the third heat exchanger 38 (next to the insulating layer 39) The surfaces are each trimmed to have a surface roughness Ra of 5 μm or less. The insulating layers 32a, 32b, 37, and 39 are formed by dispersing a filler composed of Al 2 O 3 , AlN, MgO, or SiC into an adhesive polyimide or epoxy layer. Alternatively, the insulating layers are formed using a composite layer in which a polyimine resin layer or an epoxy layer in which a filler is dispersed is formed on the alumite layer. Here, the insulating layers 32a, 32b, 37, and 39 are formed by crimping the material of the sheet shape. Alternatively, the varnish is applied to a sheet-shaped material, which is then cured to form insulating layers 32a, 32b, 37, and 39. The electrodes 33a, 33b, 35a, and 35b are each composed of a copper film or a copper alloy film and are each formed to define a predetermined electrode pattern having a specified thickness of 70 μm to 200 μm. The far end (or the opposite end in the longitudinal direction) of the P-type semiconductor and the N-type semiconductor is plated with nickel.
如圖10A中所示,具有圖11A中所示之指定電極圖案的由一銅薄膜或一銅合金薄膜組成之第一下部電極33a結合至第一熱交換器31之絕緣層32a上。具有圖11A中所示之指定電極圖案的由一銅薄膜或一銅合金薄膜組成之第一上部電極33b結合至第一熱交換器31之絕緣層32b上。隨後,如圖10B中所示,在第一下部電極33a上交替對準由P型半導體及N型半導體組成的該等熱電元件34a,其中該等熱電元件34a之下端經由一焊接合金(例如,SnSb合金、AuSn合金及SnAgCu合金)而附接至第一下部電極33a上。由P型半導體及N型半導體組成的該等第二熱電元件34b在第一上部電極33b之下交替對準,其中該等熱電元件34b之上端經由一焊接合金(例如,SnSb合金、AuSn合金及SnAgCu合金)而附接至第一上部電極33b。具有指定電極圖案(參見圖11B)的由一銅薄膜或一銅合金薄膜組成之第二上部電極35a安置於該等第一熱電元件34a之上端上,而具有指定電極圖案(參見圖11B)的由一銅薄膜或一銅合金薄膜組成之第二下部電極35b安置於該等第二熱電元件34b之下端之下。As shown in FIG. 10A, a first lower electrode 33a composed of a copper film or a copper alloy film having the specified electrode pattern shown in FIG. 11A is bonded to the insulating layer 32a of the first heat exchanger 31. The first upper electrode 33b composed of a copper film or a copper alloy film having the specified electrode pattern shown in Fig. 11A is bonded to the insulating layer 32b of the first heat exchanger 31. Subsequently, as shown in FIG. 10B, the thermoelectric elements 34a composed of a P-type semiconductor and an N-type semiconductor are alternately aligned on the first lower electrode 33a, wherein the lower ends of the thermoelectric elements 34a are via a solder alloy (for example The SnSb alloy, the AuSn alloy, and the SnAgCu alloy are attached to the first lower electrode 33a. The second thermoelectric elements 34b composed of a P-type semiconductor and an N-type semiconductor are alternately aligned under the first upper electrode 33b, wherein the upper ends of the thermoelectric elements 34b are via a solder alloy (for example, SnSb alloy, AuSn alloy, and The SnAgCu alloy is attached to the first upper electrode 33b. A second upper electrode 35a composed of a copper film or a copper alloy film having a specified electrode pattern (see FIG. 11B) is disposed on the upper ends of the first thermoelectric elements 34a to have a specified electrode pattern (see FIG. 11B). A second lower electrode 35b composed of a copper film or a copper alloy film is disposed under the lower ends of the second thermoelectric elements 34b.
此後,經由一焊接合金(例如,SnSb合金、AuSn合金及SnAgCu合金),將第二上部電極35a附接至該等第一熱電元件34a之上端,而將第二下部電極35b附接至該等第二熱電元件34b之下端。因此,由P型半導體及N型半導體組成的該等第一熱電元件34a交替對準且以串聯方式電連接於第一下部電極33a與第二上部電極35a之間,而由P型半導體及N型半導體組成的該等第二熱電元件34b交替對準且以串聯方式電連接於第一上部電極33b與第二下部電極35b之間。Thereafter, the second upper electrode 35a is attached to the upper ends of the first thermoelectric elements 34a via a solder alloy (for example, a SnSb alloy, an AuSn alloy, and a SnAgCu alloy), and the second lower electrode 35b is attached to the first lower electrodes 35b. The lower end of the second thermoelectric element 34b. Therefore, the first thermoelectric elements 34a composed of a P-type semiconductor and an N-type semiconductor are alternately aligned and electrically connected in series between the first lower electrode 33a and the second upper electrode 35a, and the P-type semiconductor and The second thermoelectric elements 34b composed of N-type semiconductors are alternately aligned and electrically connected in series between the first upper electrode 33b and the second lower electrode 35b.
最後,如圖10C中所示,使第二熱交換器36之絕緣層37與第二上部電極35a接觸,同時使第三熱交換器38之絕緣層39與第二下部電極35b接觸;此後,將第二上部電極35a結合至絕緣層37,同時將第二下部電極35b結合至絕緣層39。此完成第三實施例之熱交換單元30之製造。Finally, as shown in FIG. 10C, the insulating layer 37 of the second heat exchanger 36 is brought into contact with the second upper electrode 35a while the insulating layer 39 of the third heat exchanger 38 is brought into contact with the second lower electrode 35b; thereafter, The second upper electrode 35a is bonded to the insulating layer 37 while the second lower electrode 35b is bonded to the insulating layer 39. This completes the manufacture of the heat exchange unit 30 of the third embodiment.
第三實施例之熱交換單元30可用以控制一指定物件(亦即,需要對溫度加以控制之主體,未圖示)之溫度。舉例而言,將藉由自該指定物件吸收熱量而變暖之熱水供應至「吸熱的」第一熱交換器31之通道31a之入口,而將通道31a之出口連接至該指定物件。另外,將冷水供應至第二熱交換器36之通道36a之入口及第三熱交換器38之通道38a之入口,而將通道36a及38a之出口用作排水口。The heat exchange unit 30 of the third embodiment can be used to control the temperature of a specified object (i.e., a body that requires temperature control, not shown). For example, hot water warmed by absorbing heat from the specified object is supplied to the inlet of the passage 31a of the "endothermic" first heat exchanger 31, and the outlet of the passage 31a is connected to the designated object. Further, cold water is supplied to the inlet of the passage 36a of the second heat exchanger 36 and the inlet of the passage 38a of the third heat exchanger 38, and the outlets of the passages 36a and 38a are used as the drain.
在以上狀態下,將電施加至第一熱電模組M1,其中該等第一熱電元件34a以串聯方式電連接於「散熱的」第二上部電極35a與「吸熱的」第一下部電極33a之間,藉以第一下部電極33a經冷卻以經由「吸熱的」第一熱交換器31自供應至該指定物件之熱水吸收熱量,而第二上部電極35a經加熱,使得其熱量經由流經第二熱交換器36之通道36a的冷水耗散。In the above state, electricity is applied to the first thermoelectric module M1, wherein the first thermoelectric elements 34a are electrically connected in series to the "heat-dissipating" second upper electrode 35a and the "endothermic" first lower electrode 33a. Between the first lower electrode 33a is cooled to absorb heat from the hot water supplied to the designated object via the "endothermic" first heat exchanger 31, and the second upper electrode 35a is heated so that its heat flows through the flow. The cold water passing through the passage 36a of the second heat exchanger 36 is dissipated.
將電施加至第二熱電模組M2,其中該等第二熱電元件34b以串聯方式電連接於「散熱的」第二下部電極35b與「吸熱的」第一上部電極33b之間,藉以第一上部電極33b經冷卻以經由第一熱交換器31自供應至該指定物件之熱水吸收熱量,而第二下部電極35b經加熱,使得其熱量經由流經第三熱交換器38之通道38a的冷水耗散。Applying electricity to the second thermoelectric module M2, wherein the second thermoelectric elements 34b are electrically connected in series between the "heat-dissipating" second lower electrode 35b and the "endothermic" first upper electrode 33b, thereby being first The upper electrode 33b is cooled to absorb heat from the hot water supplied to the specified article via the first heat exchanger 31, and the second lower electrode 35b is heated such that its heat passes through the passage 38a of the third heat exchanger 38. Cold water is dissipated.
使用第三實施例之熱交換單元30,可能藉由以下程序量測構成一效能評估基準之最大吸熱(heat-absorption或endothermic)值Qmax。基於熱交換單元30製造測試實例F1、F2及G1至G4。如圖12中所示,使用一真空腔室Z將熱交換單元30(亦即,熱交換單元之測試實例F1、F2及G1-G4)設置於其中。Using the heat exchange unit 30 of the third embodiment, it is possible to measure the maximum heat-absorption or endothermic value Qmax constituting a performance evaluation reference by the following procedure. Test examples F1, F2 and G1 to G4 were fabricated based on the heat exchange unit 30. As shown in Fig. 12, the heat exchange unit 30 (i.e., test examples F1, F2 and G1-G4 of the heat exchange unit) was placed therein using a vacuum chamber Z.
將一熱水管(未圖示)連接至第一熱交換器31之通道31a之入口,而將一排水管(未圖示)連接至通道31a之出口。將一冷水管(未圖示)連接至第二熱交換器36之通道36a之入口,而將一排水管(未圖示)連接至通道36a之出口。將一冷水管連接至第三熱交換器38之通道38a之入口,而將一排水管連接至通道38a之出口。A hot water pipe (not shown) is connected to the inlet of the passage 31a of the first heat exchanger 31, and a drain pipe (not shown) is connected to the outlet of the passage 31a. A cold water pipe (not shown) is connected to the inlet of the passage 36a of the second heat exchanger 36, and a drain pipe (not shown) is connected to the outlet of the passage 36a. A cold water pipe is connected to the inlet of the passage 38a of the third heat exchanger 38, and a drain pipe is connected to the outlet of the passage 38a.
驅動熱交換單元30以量測通道31a之入口溫度及出口溫度、通道36a之入口溫度及出口溫度及通道38a之入口溫度及出口溫度歷時十分鐘,其中藉由增加入口溫度以便量測出口溫度之平均值來執行量測,從而估計最大吸熱值Qmax。量測結果展示,熱交換單元F1指示Qmax=435W,且熱交換單元F2指示Qmax=440W。另外,熱交換單元G1指示Qmax=432W,熱交換單元G2指示Qmax=434W,熱交換單元G3指示Qmax=430W,且熱交換單元G4指示Qmax=430W。The heat exchange unit 30 is driven to measure the inlet and outlet temperatures of the passage 31a, the inlet and outlet temperatures of the passage 36a, and the inlet and outlet temperatures of the passage 38a for ten minutes, wherein the inlet temperature is increased by measuring the inlet temperature. The average is used to perform the measurement to estimate the maximum endothermic value Qmax. The measurement results show that the heat exchange unit F1 indicates Qmax = 435W, and the heat exchange unit F2 indicates Qmax = 440W. In addition, the heat exchange unit G1 indicates Qmax=432W, the heat exchange unit G2 indicates Qmax=434W, the heat exchange unit G3 indicates Qmax=430W, and the heat exchange unit G4 indicates Qmax=430W.
在上文中,製造熱交換單元F1,以使得由氧化鋁(Al2 O3 )粉末組成之填充劑分散於聚醯亞胺樹脂薄片中,從而形成具有15μm厚度之絕緣層32a、32b、37及39。製造熱交換單元F2,以使得由氧化鋁粉末組成之填充劑分散於塗漆聚醯亞胺樹脂中,從而形成具有20μm厚度之絕緣層32a、32b、37及39。In the above, the heat exchange unit F1 is manufactured such that a filler composed of alumina (Al 2 O 3 ) powder is dispersed in the polyimide film to form an insulating layer 32a, 32b, 37 having a thickness of 15 μm and 39. The heat exchange unit F2 was fabricated such that a filler composed of alumina powder was dispersed in the lacquered polyimide resin to form insulating layers 32a, 32b, 37, and 39 having a thickness of 20 μm.
製造熱交換單元G1,以使得由氧化鋁(Al2 O3 )粉末及氮化鋁(AlN)粉末組成之填充劑分散於在10μm厚之防蝕鋁層上的環氧樹脂薄片中,從而形成具有20μm厚度之絕緣層32a、32b、37及39。製造熱交換單元G2,以使得由氧化鋁(Al2 O3 )粉末及氮化鋁(AlN)粉末組成之填充劑分散於在10μm厚之防蝕鋁層上的塗漆環氧樹脂中,從而形成具有20μm厚度之絕緣層32a、32b、37及39。製造熱交換單元G3,以使得由氧化鋁(Al2 O3 )粉末及氧化鎂(MgO)粉末組成之填充劑分散於在10μm厚之防蝕鋁層上的環氧樹脂薄片中,從而形成具有20μm厚度之絕緣層32a、32b、37及39。製造熱交換單元G4,以使得由氧化鋁(Al2 O3 )粉末及碳化矽(SiC)粉末組成之填充劑分散於在10μm厚之防蝕鋁層上的塗漆環氧樹脂中,從而形成具有20μm厚度之絕緣層32a、32b、37及39。The heat exchange unit G1 is fabricated such that a filler composed of aluminum oxide (Al 2 O 3 ) powder and aluminum nitride (AlN) powder is dispersed in an epoxy resin sheet on a 10 μm thick alumite layer, thereby forming 20 μm thick insulating layers 32a, 32b, 37 and 39. The heat exchange unit G2 is fabricated such that a filler composed of aluminum oxide (Al 2 O 3 ) powder and aluminum nitride (AlN) powder is dispersed in a painted epoxy resin on a 10 μm thick alumite layer to form The insulating layers 32a, 32b, 37, and 39 have a thickness of 20 μm. The heat exchange unit G3 was fabricated such that a filler composed of aluminum oxide (Al 2 O 3 ) powder and magnesium oxide (MgO) powder was dispersed in an epoxy resin sheet on a 10 μm thick alumite layer to form 20 μm. Insulating layers 32a, 32b, 37 and 39 of thickness. Manufacturing a heat exchange unit G4 such that a filler composed of alumina (Al 2 O 3 ) powder and cerium carbide (SiC) powder is dispersed in a lacquer epoxy resin on a 10 μm thick alumite layer, thereby forming 20 μm thick insulating layers 32a, 32b, 37 and 39.
基於熱交換單元F1及F2藉由改變毗鄰絕緣層32a及32b之第一熱交換器31之表面及背面上、毗鄰絕緣層37之第二熱交換器36之表面上及毗鄰絕緣層39之第三熱交換器38之表面上的表面粗糙度Ra來製造熱交換單元F11至F19及F21至F29。相對於使用表面粗糙度Ra之不同值的熱交換單元F11-F19及F21-F29量測耐受電壓WS。Based on the heat exchange units F1 and F2, by changing the surface of the first heat exchanger 31 adjacent to the insulating layers 32a and 32b and the surface of the second heat exchanger 36 adjacent to the insulating layer 37 and adjacent to the insulating layer 39 The surface roughness Ra on the surface of the triple heat exchanger 38 is used to manufacture the heat exchange units F11 to F19 and F21 to F29. The withstand voltage WS is measured with respect to the heat exchange units F11-F19 and F21-F29 using different values of the surface roughness Ra.
具體言之,相對於熱交換單元F1改變(毗鄰絕緣層32a及32b之第一熱交換器31之表面及背面上、毗鄰絕緣層37之第二熱交換器36之表面上及毗鄰絕緣層39之第三熱交換器38之表面上的)表面粗糙度Ra,使得熱交換單元F11具有0.3μm之表面粗糙度,熱交換單元F12具有0.5μm之表面粗糙度,熱交換單元F13具有1.0μm之表面粗糙度,熱交換單元F14具有1.6μm之表面粗糙度,熱交換單元F15具有2.2μm之表面粗糙度,熱交換單元F16具有3.2μm之表面粗糙度,熱交換單元F17具有4.4μm之表面粗糙度,熱交換單元F18具有4.7μm之表面粗糙度,且熱交換單元F19具有5.1μm之表面粗糙度。另外,基於熱交換單元F1製造一具有0.08μm之表面粗糙度的熱交換單元F1a及一具有0.1μm之表面粗糙度的熱交換單元F1b,且對耐受電壓WS進行量測。量測結果展示於表6-1中,其中絕緣層32a、32b、37及39各自由一15μm厚之聚醯亞胺薄片組態,且填充劑由氧化鋁(Al2 O3 )組成。Specifically, it is changed with respect to the heat exchange unit F1 (on the surface and the back surface of the first heat exchanger 31 adjacent to the insulating layers 32a and 32b, on the surface of the second heat exchanger 36 adjacent to the insulating layer 37, and adjacent to the insulating layer 39 The surface roughness Ra on the surface of the third heat exchanger 38 is such that the heat exchange unit F11 has a surface roughness of 0.3 μm, the heat exchange unit F12 has a surface roughness of 0.5 μm, and the heat exchange unit F13 has a thickness of 1.0 μm. Surface roughness, heat exchange unit F14 has a surface roughness of 1.6 μm, heat exchange unit F15 has a surface roughness of 2.2 μm, heat exchange unit F16 has a surface roughness of 3.2 μm, and heat exchange unit F17 has a surface roughness of 4.4 μm. The heat exchange unit F18 has a surface roughness of 4.7 μm, and the heat exchange unit F19 has a surface roughness of 5.1 μm. Further, a heat exchange unit F1a having a surface roughness of 0.08 μm and a heat exchange unit F1b having a surface roughness of 0.1 μm were produced based on the heat exchange unit F1, and the withstand voltage WS was measured. The measurement results are shown in Table 6-1, in which the insulating layers 32a, 32b, 37, and 39 are each configured of a 15 μm thick polyimide film, and the filler is composed of alumina (Al 2 O 3 ).
另外,相對於熱交換單元F2改變表面粗糙度Ra,使得熱交換單元F21具有0.3μm之表面粗糙度,熱交換單元F22具有0.5μm之表面粗糙度,熱交換單元F23具有1.0μm之表面粗糙度,熱交換單元F24具有1.6μm之表面粗糙度,熱交換單元F25具有2.2μm之表面粗糙度,熱交換單元F26具有3.2μm之表面粗糙度,熱交換單元F27具有4.4μm之表面粗糙度,熱交換單元F28具有4.7μm之表面粗糙度,且熱交換單元F29具有5.1μm之表面粗糙度。另外,基於熱交換單元F2製造一具有0.08μm之表面粗糙度的熱交換單元F2a及一具有0.1μm之表面粗糙度的熱交換單元F2b,且對耐受電壓WS進行量測。量測結果展示於表6-2中,其中絕緣層32a、32b、37及39各自由一20μm厚之聚醯亞胺清漆組態,且填充劑由氧化鋁(Al2 O3 )組成。Further, the surface roughness Ra is changed with respect to the heat exchange unit F2 so that the heat exchange unit F21 has a surface roughness of 0.3 μm, the heat exchange unit F22 has a surface roughness of 0.5 μm, and the heat exchange unit F23 has a surface roughness of 1.0 μm. The heat exchange unit F24 has a surface roughness of 1.6 μm, the heat exchange unit F25 has a surface roughness of 2.2 μm, the heat exchange unit F26 has a surface roughness of 3.2 μm, and the heat exchange unit F27 has a surface roughness of 4.4 μm, heat. The exchange unit F28 has a surface roughness of 4.7 μm, and the heat exchange unit F29 has a surface roughness of 5.1 μm. Further, a heat exchange unit F2a having a surface roughness of 0.08 μm and a heat exchange unit F2b having a surface roughness of 0.1 μm were produced based on the heat exchange unit F2, and the withstand voltage WS was measured. The measurement results are shown in Table 6-2, in which the insulating layers 32a, 32b, 37, and 39 are each configured by a 20 μm thick polyimide varnish, and the filler is composed of alumina (Al 2 O 3 ).
在圖13之圖式上標繪表6-1及表6-2中的關於熱交換單元F11-F19及F21-F29之量測結果,圖13之圖式的水平軸表示表面粗糙度Ra(μm)且圖13之圖式的垂直軸表示耐受電壓WS(kV),從而繪製量測曲線(或斷線)F1及F2。圖13及表6-1及表6-2中所示之以上量測結果清楚地展示,耐受電壓WS在表面粗糙度Ra小於4.7μm時良好,但WS在表面粗糙度Ra超過4.7μm時迅速減小,因此,熱交換器31、36及38之表面粗糙度Ra較佳小於4.7μm。The measurement results of the heat exchange units F11-F19 and F21-F29 in Tables 6-1 and 6-2 are plotted on the graph of Fig. 13, and the horizontal axis of the graph of Fig. 13 indicates the surface roughness Ra ( Μm) and the vertical axis of the graph of Fig. 13 represents the withstand voltage WS(kV), thereby plotting the measurement curves (or broken lines) F1 and F2. The above measurement results shown in FIG. 13 and Table 6-1 and Table 6-2 clearly show that the withstand voltage WS is good when the surface roughness Ra is less than 4.7 μm, but when the surface roughness Ra exceeds 4.7 μm. The surface roughness Ra of the heat exchangers 31, 36 and 38 is preferably less than 4.7 μm.
類似地,基於熱交換單元G1、G2、G3及G4藉由改變毗鄰絕緣層32a及32b之第一熱交換器31之表面及背面上、毗鄰絕緣層37之第二熱交換器36之表面上及毗鄰絕緣層39之第三熱交換器38之表面上的表面粗糙度Ra來製造熱交換單元G11至G19、G21至G29、G31至G39及G41至G49。相對於使用表面粗糙度Ra之不同值的熱交換單元G11-G19、G21-G29、G31-G39及G41-G49量測耐受電壓WS。Similarly, based on the heat exchange units G1, G2, G3, and G4, the surface of the second heat exchanger 36 adjacent to the insulating layer 37 on the front and back surfaces of the first heat exchanger 31 adjacent to the insulating layers 32a and 32b is changed. The surface roughness Ra on the surface of the third heat exchanger 38 adjacent to the insulating layer 39 is used to manufacture the heat exchange units G11 to G19, G21 to G29, G31 to G39, and G41 to G49. The withstand voltage WS is measured with respect to the heat exchange units G11-G19, G21-G29, G31-G39, and G41-G49 using different values of the surface roughness Ra.
具體言之,相對於熱交換單元G1改變(毗鄰絕緣層32a及32b之第一熱交換器31之表面及背面上、毗鄰絕緣層37之第二熱交換器36之表面上及毗鄰絕緣層39之第三熱交換器38之表面上的)表面粗糙度Ra,使得熱交換單元G11具有0.3μm之表面粗糙度,熱交換單元G12具有0.5μm之表面粗糙度,熱交換單元G13具有1.0μm之表面粗糙度,熱交換單元G14具有1.6μm之表面粗糙度,熱交換單元G15具有2.1μm之表面粗糙度,熱交換單元G16具有3.2μm之表面粗糙度,熱交換單元G17具有4.4μm之表面粗糙度,熱交換單元G18具有4.7μm之表面粗糙度,且熱交換單元G19具有5.1μm之表面粗糙度。另外,基於熱交換單元G1製造一具有0.07μm之表面粗糙度的熱交換單元G1a及一具有0.1μm之表面粗糙度的熱交換單元G1b,且對耐受電壓WS進行量測。量測結果展示於表7-1中,其中絕緣層32a、32b、37及39各自由一20μm厚之環氧薄片加上一10μm之防蝕鋁層組態,且填充劑由氧化鋁(Al2 O3 )加上氮化鋁(AlN)組成。Specifically, it is changed with respect to the heat exchange unit G1 (on the surface and the back surface of the first heat exchanger 31 adjacent to the insulating layers 32a and 32b, on the surface of the second heat exchanger 36 adjacent to the insulating layer 37, and adjacent to the insulating layer 39 The surface roughness Ra on the surface of the third heat exchanger 38 is such that the heat exchange unit G11 has a surface roughness of 0.3 μm, the heat exchange unit G12 has a surface roughness of 0.5 μm, and the heat exchange unit G13 has a thickness of 1.0 μm. Surface roughness, heat exchange unit G14 has a surface roughness of 1.6 μm, heat exchange unit G15 has a surface roughness of 2.1 μm, heat exchange unit G16 has a surface roughness of 3.2 μm, and heat exchange unit G17 has a surface roughness of 4.4 μm. The heat exchange unit G18 has a surface roughness of 4.7 μm, and the heat exchange unit G19 has a surface roughness of 5.1 μm. Further, a heat exchange unit G1a having a surface roughness of 0.07 μm and a heat exchange unit G1b having a surface roughness of 0.1 μm were produced based on the heat exchange unit G1, and the withstand voltage WS was measured. The measurement results are shown in Table 7-1, in which the insulating layers 32a, 32b, 37, and 39 are each configured of a 20 μm thick epoxy sheet plus a 10 μm alumite layer, and the filler is made of alumina (Al 2 ). O 3 ) plus aluminum nitride (AlN) composition.
相對於熱交換單元G2改變表面粗糙度Ra,使得熱交換單元G21具有0.3μm之表面粗糙度,熱交換單元G22具有0.5μm之表面粗糙度,熱交換單元G23具有1.0μm之表面粗糙度,熱交換單元G24具有1.6μm之表面粗糙度,熱交換單元G25具有2.1μm之表面粗糙度,熱交換單元G26具有3.2μm之表面粗糙度,熱交換單元G27具有4.4μm之表面粗糙度,熱交換單元G28具有4.7μm之表面粗糙度,且熱交換單元G29具有5.1μm之表面粗糙度。另外,基於熱交換單元G2製造一具有0.07μm之表面粗糙度的熱交換單元G2a及一具有0.1μm之表面粗糙度的熱交換單元G2b,且對耐受電壓WS進行量測。量測結果展示於表7-2中,其中絕緣層32a、32b、37及39各自由一20μm厚之環氧清漆加上一10μm之防蝕鋁層組態,且填充劑由氧化鋁(Al2 O3 )加上氮化鋁(AlN)組成。The surface roughness Ra is changed with respect to the heat exchange unit G2 such that the heat exchange unit G21 has a surface roughness of 0.3 μm, the heat exchange unit G22 has a surface roughness of 0.5 μm, and the heat exchange unit G23 has a surface roughness of 1.0 μm, heat The exchange unit G24 has a surface roughness of 1.6 μm, the heat exchange unit G25 has a surface roughness of 2.1 μm, the heat exchange unit G26 has a surface roughness of 3.2 μm, and the heat exchange unit G27 has a surface roughness of 4.4 μm, and the heat exchange unit G28 has a surface roughness of 4.7 μm, and the heat exchange unit G29 has a surface roughness of 5.1 μm. Further, a heat exchange unit G2a having a surface roughness of 0.07 μm and a heat exchange unit G2b having a surface roughness of 0.1 μm were produced based on the heat exchange unit G2, and the withstand voltage WS was measured. The measurement results are shown in Table 7-2, in which the insulating layers 32a, 32b, 37 and 39 are each configured by a 20 μm thick epoxy varnish plus a 10 μm alumite layer, and the filler is made of alumina (Al 2 O 3 ) plus aluminum nitride (AlN) composition.
相對於熱交換單元G3改變表面粗糙度Ra,使得熱交換單元G31具有0.3μm之表面粗糙度,熱交換單元G32具有0.5μm之表面粗糙度,熱交換單元G33具有1.0μm之表面粗糙度,熱交換單元G34具有1.6μm之表面粗糙度,熱交換單元G35具有2.1μm之表面粗糙度,熱交換單元G36具有3.2μm之表面粗糙度,熱交換單元G37具有4.4μm之表面粗糙度,熱交換單元G38具有4.7μm之表面粗糙度,且熱交換單元G39具有5.1μm之表面粗糙度。另外,基於熱交換單元G3製造一具有0.07μm之表面粗糙度的熱交換單元G3a及一具有0.1μm之表面粗糙度的熱交換單元G3b,且對耐受電壓WS進行量測。量測結果展示於表7-3中,其中絕緣層32a、32b、37及39各自由一20μm厚之環氧薄片加上一10μm之防蝕鋁層組態,且填充劑由氧化鋁(Al2 O3 )加上氧化鎂(MgO)組成。The surface roughness Ra is changed with respect to the heat exchange unit G3 such that the heat exchange unit G31 has a surface roughness of 0.3 μm, the heat exchange unit G32 has a surface roughness of 0.5 μm, and the heat exchange unit G33 has a surface roughness of 1.0 μm, heat The exchange unit G34 has a surface roughness of 1.6 μm, the heat exchange unit G35 has a surface roughness of 2.1 μm, the heat exchange unit G36 has a surface roughness of 3.2 μm, and the heat exchange unit G37 has a surface roughness of 4.4 μm, and the heat exchange unit G38 has a surface roughness of 4.7 μm, and the heat exchange unit G39 has a surface roughness of 5.1 μm. Further, a heat exchange unit G3a having a surface roughness of 0.07 μm and a heat exchange unit G3b having a surface roughness of 0.1 μm were produced based on the heat exchange unit G3, and the withstand voltage WS was measured. The measurement results are shown in Table 7-3, in which the insulating layers 32a, 32b, 37, and 39 are each configured of a 20 μm thick epoxy sheet plus a 10 μm alumite layer, and the filler is made of alumina (Al 2 O 3 ) plus magnesium oxide (MgO) composition.
相對於熱交換單元G4改變表面粗糙度Ra,使得熱交換單元G41具有0.3μm之表面粗糙度,熱交換單元G42具有0.5μm之表面粗糙度,熱交換單元G43具有1.0μm之表面粗糙度,熱交換單元G44具有1.6μm之表面粗糙度,熱交換單元G45具有2.1μm之表面粗糙度,熱交換單元G46具有3.2μm之表面粗糙度,熱交換單元G47具有4.4μm之表面粗糙度,熱交換單元G48具有4.7μm之表面粗糙度,且熱交換單元G49具有5.1μm之表面粗糙度。另外,基於熱交換單元G4製造一具有0.07μm之表面粗糙度的熱交換單元G4a及一具有0.1μm之表面粗糙度的熱交換單元G4b,且對耐受電壓WS進行量測。量測結果展示於表7-4中,其中絕緣層32a、32b、37及39各自由一20μm厚之環氧清漆加上一10μm之防蝕鋁層組態,且填充劑由氧化鋁(Al2 O3 )加上氮化矽(SiC)組成。The surface roughness Ra is changed with respect to the heat exchange unit G4 such that the heat exchange unit G41 has a surface roughness of 0.3 μm, the heat exchange unit G42 has a surface roughness of 0.5 μm, and the heat exchange unit G43 has a surface roughness of 1.0 μm, heat The exchange unit G44 has a surface roughness of 1.6 μm, the heat exchange unit G45 has a surface roughness of 2.1 μm, the heat exchange unit G46 has a surface roughness of 3.2 μm, the heat exchange unit G47 has a surface roughness of 4.4 μm, and the heat exchange unit G48 has a surface roughness of 4.7 μm, and the heat exchange unit G49 has a surface roughness of 5.1 μm. Further, a heat exchange unit G4a having a surface roughness of 0.07 μm and a heat exchange unit G4b having a surface roughness of 0.1 μm were produced based on the heat exchange unit G4, and the withstand voltage WS was measured. The measurement results are shown in Table 7-4, in which the insulating layers 32a, 32b, 37 and 39 are each configured by a 20 μm thick epoxy varnish plus a 10 μm alumite layer, and the filler is made of alumina (Al 2 O 3 ) plus a tantalum nitride (SiC) composition.
在圖13之圖式標繪表7-1至表7-4中的關於熱交換單元G11-G19、G21-G29、G31-G39及G41-G49之量測結果,從而繪製量測曲線(或斷線)G1、G2、G3及G4。圖13及表7-1至表7-4中所示之以上量測結果清楚地展示,耐受電壓WS在表面粗糙度Ra小於4.7μm時良好,但WS在表面粗糙度Ra超過4.7μm時迅速減小。因此,熱交換器31、36及38之表面粗糙度Ra較佳小於4.7μm。The measurement results of the heat exchange units G11-G19, G21-G29, G31-G39, and G41-G49 in Table 7-1 to Table 7-4 are plotted in FIG. 13 to draw a measurement curve (or Broken line) G1, G2, G3 and G4. The above measurement results shown in FIG. 13 and Table 7-1 to Table 7-4 clearly show that the withstand voltage WS is good when the surface roughness Ra is less than 4.7 μm, but when the surface roughness Ra exceeds 4.7 μm. Decrease rapidly. Therefore, the surface roughness Ra of the heat exchangers 31, 36 and 38 is preferably less than 4.7 μm.
根據關於熱交換單元A1a-A3a、A1b-A3b、C1a-C3a、C1b-C3b、D1a-D3a、D1b-D3b、E1a-E2a、E1b-E2b、F1a-F2a、F1b-F2b、G1a-G4a及G1b-G4b之額外量測結果,最大吸熱值Qmax大幅度減小以致當表面粗糙度Ra變得小於0.1μm時吸熱/散熱效能降級。此係因為,當表面粗糙度Ra變得小於0.1μm時,熱交換器之表面可能充當一鏡面,其減少形成於絕緣層與熱交換器之表面之間的界面區域以致界面區域處之熱阻增加,熱阻之增加反過來使熱交換效率減小。因此,絕緣層與熱交換器之間的界面處之表面粗糙度Ra較佳大於0.1μm。According to the heat exchange units A1a-A3a, A1b-A3b, C1a-C3a, C1b-C3b, D1a-D3a, D1b-D3b, E1a-E2a, E1b-E2b, F1a-F2a, F1b-F2b, G1a-G4a and G1b As a result of the additional measurement of -G4b, the maximum endothermic value Qmax is greatly reduced so that the heat absorption/heat dissipation performance is degraded when the surface roughness Ra becomes less than 0.1 μm. This is because, when the surface roughness Ra becomes less than 0.1 μm, the surface of the heat exchanger may act as a mirror surface, which reduces the interface region formed between the insulating layer and the surface of the heat exchanger so that the thermal resistance at the interface region Increasing, the increase in thermal resistance in turn reduces the heat exchange efficiency. Therefore, the surface roughness Ra at the interface between the insulating layer and the heat exchanger is preferably greater than 0.1 μm.
使用諸如聚醯亞胺樹脂及環氧樹脂之合成樹脂材料組態以上實施例。當然,可能使用亦展現前述效果的其他材料,諸如芳族聚醯胺樹脂及BT(雙馬來醯亞胺-三嗪)樹脂。The above examples were configured using a synthetic resin material such as a polyimide resin and an epoxy resin. Of course, it is possible to use other materials which also exhibit the aforementioned effects, such as an aromatic polyamide resin and a BT (bismaleimide-triazine) resin.
使用諸如氧化鋁粉末、氮化鋁粉末、氧化鎂粉末及碳化矽之填充劑來組態以上實施例;但此並非一限制;因此,可能使用其他具有高熱導率之填充劑材料,諸如碳粉、碳化矽粉末及氮化矽。單一的填充劑材料可滿足以上實施例,但可能使用兩種或兩種以上填充劑材料之混合物。另外,填充劑可形成為任何形狀,諸如球形形狀及針狀形狀及其組合。The above embodiment is configured using a filler such as alumina powder, aluminum nitride powder, magnesium oxide powder, and tantalum carbide; however, this is not a limitation; therefore, other filler materials having high thermal conductivity such as carbon powder may be used. , tantalum carbide powder and tantalum nitride. A single filler material may satisfy the above examples, but it is possible to use a mixture of two or more filler materials. In addition, the filler may be formed in any shape such as a spherical shape and a needle shape, and a combination thereof.
最後,本發明未必限於以上實施例,在如附加之申請專利範圍中所界定的本發明之範疇內,可以各種方式進一步修改該等實施例。In the end, the present invention is not necessarily limited to the above embodiments, and the embodiments may be further modified in various ways within the scope of the invention as defined in the appended claims.
10...熱交換單元10. . . Heat exchange unit
11...第一熱交換器11. . . First heat exchanger
11a...散熱鰭片11a. . . Heat sink fin
12...絕緣層12. . . Insulation
13...下部電極13. . . Lower electrode
14...熱電元件14. . . Thermoelectric element
15...上部電極15. . . Upper electrode
16...第二熱交換器16. . . Second heat exchanger
16a...散熱鰭片16a. . . Heat sink fin
17...絕緣層17. . . Insulation
20...熱交換單元20. . . Heat exchange unit
21...第一熱交換器twenty one. . . First heat exchanger
21a...通道21a. . . aisle
21b...安裝孔21b. . . Mounting holes
22...絕緣層twenty two. . . Insulation
23...下部電極twenty three. . . Lower electrode
24...熱電元件twenty four. . . Thermoelectric element
25...上部電極25. . . Upper electrode
26...第二熱交換器26. . . Second heat exchanger
26a...通道26a. . . aisle
26b...安裝孔26b. . . Mounting holes
27...絕緣層27. . . Insulation
30...熱交換單元30. . . Heat exchange unit
31...第一熱交換器31. . . First heat exchanger
31a...通道31a. . . aisle
31b...安裝孔31b. . . Mounting holes
31c...旁通區域31c. . . Bypass area
32a...絕緣層32a. . . Insulation
32b...絕緣層32b. . . Insulation
33a...第一下部電極33a. . . First lower electrode
33b...第一上部電極33b. . . First upper electrode
34a...第一熱電元件34a. . . First thermoelectric element
34b...第二熱電元件34b. . . Second thermoelectric element
35a...第二上部電極35a. . . Second upper electrode
35b...第二下部電極35b. . . Second lower electrode
36...第二熱交換器36. . . Second heat exchanger
36a...通道36a. . . aisle
36b...安裝孔36b. . . Mounting holes
36c...旁通區域36c. . . Bypass area
37...絕緣層37. . . Insulation
38...第三熱交換器38. . . Third heat exchanger
38a...通道38a. . . aisle
38b...安裝孔38b. . . Mounting holes
38c...旁通區域38c. . . Bypass area
39...絕緣層39. . . Insulation
40...熱交換單元40. . . Heat exchange unit
40a...熱電模組40a. . . Thermoelectric module
41...熱交換部件(散熱片)41. . . Heat exchange unit (heat sink)
42...絕緣層42. . . Insulation
43...金屬電鍍層43. . . Metal plating
44...「下部」金屬電極44. . . "lower" metal electrode
45a...P型熱電元件45a. . . P type thermoelectric element
45b...N型熱電元件45b. . . N type thermoelectric element
46...「上部」金屬電極46. . . "upper" metal electrode
50...熱交換單元50. . . Heat exchange unit
50a...熱電轉換器模組(或熱電模組)50a. . . Thermoelectric converter module (or thermoelectric module)
51...散熱部件(或散熱片)51. . . Heat sink (or heat sink)
52...吸熱部件(或散熱片)52. . . Heat absorbing part (or heat sink)
53...散熱電極53. . . Heat sink electrode
54...吸熱電極54. . . Endothermic electrode
55...熱電元件55. . . Thermoelectric element
56a...樹脂56a. . . Resin
56b...金屬箔56b. . . Metal foil
56c...焊料56c. . . solder
57a...樹脂57a. . . Resin
57b...油脂57b. . . grease
A1~A3...熱交換單元之測試實例A1~A3. . . Test example of heat exchange unit
B1~B4...熱交換單元之測試實例B1~B4. . . Test example of heat exchange unit
C1~C3...熱交換單元之測試實例C1~C3. . . Test example of heat exchange unit
D1~D3...熱交換單元之測試實例D1~D3. . . Test example of heat exchange unit
E1~E2...熱交換單元之測試實例E1~E2. . . Test example of heat exchange unit
F1~F2...熱交換單元之測試實例F1~F2. . . Test example of heat exchange unit
G1~G4...熱交換單元之測試實例G1~G4. . . Test example of heat exchange unit
H...加熱器H. . . Heater
M...熱電模組M. . . Thermoelectric module
M1...第一熱電模組M1. . . First thermoelectric module
M2...第二熱電模組M2. . . Second thermoelectric module
P...探針P. . . Probe
X...絕熱盒X. . . Insulation box
Y...真空腔室Y. . . Vacuum chamber
Z...真空腔室Z. . . Vacuum chamber
圖1A為展示一經由一絕緣層毗鄰一下部電極之第一熱交換器的縱向斷面圖。Figure 1A is a longitudinal cross-sectional view showing a first heat exchanger adjacent to a lower electrode via an insulating layer.
圖1B為一縱向斷面圖,其中複數個熱電元件對準且結合至該第一熱交換器之下部電極。Figure 1B is a longitudinal cross-sectional view in which a plurality of thermoelectric elements are aligned and bonded to the lower electrode of the first heat exchanger.
圖1C為一縱向斷面圖,其中一經由一絕緣層毗鄰一上部電極之第二熱交換器與圖1B中所示之第一熱交換器組合,且其中該等熱電元件插入於該第一熱交換器之下部電極與該第二熱交換器之上部電極之間以致形成一根據本發明之第一實施例的熱交換單元,其包括一熱電模組。1C is a longitudinal cross-sectional view, in which a second heat exchanger adjacent to an upper electrode via an insulating layer is combined with the first heat exchanger shown in FIG. 1B, and wherein the thermoelectric elements are inserted in the first A heat exchange unit according to the first embodiment of the present invention is formed between the lower electrode of the heat exchanger and the upper electrode of the second heat exchanger, and includes a thermoelectric module.
圖2A為展示下部電極之對準圖案的平面圖。2A is a plan view showing an alignment pattern of lower electrodes.
圖2B為展示上部電極之對準圖案的平面圖。2B is a plan view showing an alignment pattern of the upper electrode.
圖3之說明圖展示一用於量測關於第一實施例之熱交換單元之最大吸熱值Qmax的絕熱盒。The explanatory diagram of Fig. 3 shows a heat insulating box for measuring the maximum endothermic value Qmax with respect to the heat exchange unit of the first embodiment.
圖4之說明圖展示用於量測第一實施例之熱交換單元之耐受電壓WS的方法。4 is a diagram showing a method for measuring the withstand voltage WS of the heat exchange unit of the first embodiment.
圖5之圖式展示關於第一實施例之熱交換單元之測試實例的耐受電壓WS相對於表面粗糙度Ra之量測結果。Fig. 5 is a graph showing the measurement results of the withstand voltage WS with respect to the surface roughness Ra of the test example of the heat exchange unit of the first embodiment.
圖6A的側視圖展示在根據本發明之第二實施例之熱交換單元中,一下部電極經由一絕緣層形成於一水冷式第一熱交換器之表面上。Fig. 6A is a side view showing the heat exchange unit according to the second embodiment of the present invention, the lower electrode is formed on the surface of a water-cooled first heat exchanger via an insulating layer.
圖6B之側視圖展示一上部電極附接至在圖6A中所示之第一熱交換器之下部電極上對準的熱電元件之上端。Figure 6B is a side elevational view showing an upper electrode attached to the upper end of the thermoelectric element aligned on the lower electrode of the first heat exchanger shown in Figure 6A.
圖6C之側視圖展示一水冷式第二熱交換器經由一絕緣層毗鄰該上部電極。Figure 6C is a side view showing a water-cooled second heat exchanger adjacent to the upper electrode via an insulating layer.
圖7A為展示下部電極之對準圖案的平面圖。Fig. 7A is a plan view showing an alignment pattern of lower electrodes.
圖7B為展示上部電極之對準圖案的平面圖。Fig. 7B is a plan view showing an alignment pattern of the upper electrode.
圖8之說明圖展示一用於量測關於第二實施例之熱交換單元之最大吸熱值Qmax的真空腔室。The explanatory diagram of Fig. 8 shows a vacuum chamber for measuring the maximum endothermic value Qmax with respect to the heat exchange unit of the second embodiment.
圖9之圖式展示關於第二實施例之熱交換單元之測試實例的耐受電壓WS相對於表面粗糙度Ra之量測結果。Fig. 9 is a graph showing the measurement results of the withstand voltage WS with respect to the surface roughness Ra of the test example of the heat exchange unit of the second embodiment.
圖10A之側視圖展示在根據本發明之第三實施例之熱交換單元中,一第一下部電極及一第一上部電極經由絕緣層形成於一水冷式第一熱交換器之表面及背面上。10A is a side view showing a heat exchange unit according to a third embodiment of the present invention, a first lower electrode and a first upper electrode are formed on the surface and the back surface of a water-cooled first heat exchanger via an insulating layer. on.
圖10B之側視圖展示一第二上部電極附接至在第一下部電極上對準的第一熱電元件之上端,而一第二下部電極附接至在第一上部電極之下對準的第二熱電元件之下端。Figure 10B is a side view showing a second upper electrode attached to the upper end of the first thermoelectric element aligned on the first lower electrode and a second lower electrode attached to the underlying first upper electrode The lower end of the second thermoelectric element.
圖10C之側視圖展示一水冷式第二熱交換器經由一絕緣層毗鄰該第二上部電極,而一水冷式第三熱交換器毗鄰該第二下部電極。Figure 10C is a side view showing a water-cooled second heat exchanger adjacent to the second upper electrode via an insulating layer and a water-cooled third heat exchanger adjacent the second lower electrode.
圖11A為展示第一下部電極及第一上部電極之對準圖案的平面圖。Figure 11A is a plan view showing an alignment pattern of a first lower electrode and a first upper electrode.
圖11B為展示第二下部電極及第二上部電極之對準圖案的平面圖。Fig. 11B is a plan view showing an alignment pattern of the second lower electrode and the second upper electrode.
圖12之說明圖展示一用於量測關於第三實施例之熱交換單元之最大吸熱值Qmax的真空腔室。Figure 12 is an explanatory view showing a vacuum chamber for measuring the maximum endothermic value Qmax with respect to the heat exchange unit of the third embodiment.
圖13之圖式展示關於第三實施例之熱交換單元之測試實例的耐受電壓WS相對於表面粗糙度Ra之量測結果。Fig. 13 is a graph showing the measurement results of the withstand voltage WS with respect to the surface roughness Ra of the test example of the heat exchange unit of the third embodiment.
圖14為一熱交換單元之一實例的縱向斷面圖。Figure 14 is a longitudinal cross-sectional view showing an example of a heat exchange unit.
圖15為一熱交換單元之另一實例的縱向斷面圖。Figure 15 is a longitudinal cross-sectional view showing another example of a heat exchange unit.
10...熱交換單元10. . . Heat exchange unit
11...第一熱交換器11. . . First heat exchanger
11a...散熱鰭片11a. . . Heat sink fin
12...絕緣層12. . . Insulation
13...下部電極13. . . Lower electrode
14...熱電元件14. . . Thermoelectric element
15...上部電極15. . . Upper electrode
16...第二熱交換器16. . . Second heat exchanger
16a...散熱鰭片16a. . . Heat sink fin
17...絕緣層17. . . Insulation
Claims (10)
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TW200835749A (en) * | 2006-12-25 | 2008-09-01 | Dow Corning Toray Co Ltd | Curable silicone composition and electronic component |
Also Published As
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US20100186424A1 (en) | 2010-07-29 |
KR20100088078A (en) | 2010-08-06 |
CN101794766A (en) | 2010-08-04 |
JP2010199571A (en) | 2010-09-09 |
JP5593712B2 (en) | 2014-09-24 |
KR101195674B1 (en) | 2012-10-30 |
TW201112462A (en) | 2011-04-01 |
CN101794766B (en) | 2012-07-04 |
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