CN101794766B - Heat exchange unit - Google Patents
Heat exchange unit Download PDFInfo
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- CN101794766B CN101794766B CN2010101043805A CN201010104380A CN101794766B CN 101794766 B CN101794766 B CN 101794766B CN 2010101043805 A CN2010101043805 A CN 2010101043805A CN 201010104380 A CN201010104380 A CN 201010104380A CN 101794766 B CN101794766 B CN 101794766B
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- exchange unit
- heat exchange
- surface roughness
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- insulating barrier
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- 230000003746 surface roughness Effects 0.000 claims abstract description 310
- 229910052782 aluminium Inorganic materials 0.000 claims abstract description 38
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims abstract description 35
- 229910000838 Al alloy Inorganic materials 0.000 claims abstract description 10
- 230000004888 barrier function Effects 0.000 claims description 167
- 239000000945 filler Substances 0.000 claims description 69
- 239000000843 powder Substances 0.000 claims description 42
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- 229920000647 polyepoxide Polymers 0.000 claims description 41
- 229920001721 polyimide Polymers 0.000 claims description 32
- 229920005989 resin Polymers 0.000 claims description 30
- 239000011347 resin Substances 0.000 claims description 30
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 claims description 27
- 239000002966 varnish Substances 0.000 claims description 27
- 239000004411 aluminium Substances 0.000 claims description 26
- 229910010271 silicon carbide Inorganic materials 0.000 claims description 26
- 238000003475 lamination Methods 0.000 claims description 24
- 239000009719 polyimide resin Substances 0.000 claims description 24
- CPLXHLVBOLITMK-UHFFFAOYSA-N Magnesium oxide Chemical compound [Mg]=O CPLXHLVBOLITMK-UHFFFAOYSA-N 0.000 claims description 23
- 229910052751 metal Inorganic materials 0.000 claims description 12
- 239000002184 metal Substances 0.000 claims description 12
- 239000000395 magnesium oxide Substances 0.000 claims description 7
- 239000002131 composite material Substances 0.000 claims description 6
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 claims description 4
- 238000010521 absorption reaction Methods 0.000 abstract description 39
- 239000004065 semiconductor Substances 0.000 description 50
- 229910045601 alloy Inorganic materials 0.000 description 37
- 239000000956 alloy Substances 0.000 description 37
- 238000005259 measurement Methods 0.000 description 29
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 27
- 230000005855 radiation Effects 0.000 description 26
- 230000008859 change Effects 0.000 description 25
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 20
- 239000000463 material Substances 0.000 description 18
- PIGFYZPCRLYGLF-UHFFFAOYSA-N Aluminum nitride Chemical compound [Al]#N PIGFYZPCRLYGLF-UHFFFAOYSA-N 0.000 description 14
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 14
- 229910052802 copper Inorganic materials 0.000 description 14
- 239000010949 copper Substances 0.000 description 14
- 229910000597 tin-copper alloy Inorganic materials 0.000 description 14
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical group [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 12
- 238000004519 manufacturing process Methods 0.000 description 11
- 229910006913 SnSb Inorganic materials 0.000 description 10
- 239000004593 Epoxy Substances 0.000 description 8
- 239000004642 Polyimide Substances 0.000 description 8
- 238000005219 brazing Methods 0.000 description 8
- 238000009413 insulation Methods 0.000 description 8
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- 229910017083 AlN Inorganic materials 0.000 description 6
- 208000037656 Respiratory Sounds Diseases 0.000 description 6
- 150000001875 compounds Chemical class 0.000 description 6
- 229910052759 nickel Inorganic materials 0.000 description 6
- 238000007747 plating Methods 0.000 description 6
- 239000002826 coolant Substances 0.000 description 5
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- 238000007731 hot pressing Methods 0.000 description 4
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- 229910002909 Bi-Te Inorganic materials 0.000 description 3
- 229910016339 Bi—Sb—Te Inorganic materials 0.000 description 3
- 230000015572 biosynthetic process Effects 0.000 description 3
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- 239000004760 aramid Substances 0.000 description 2
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- 230000000694 effects Effects 0.000 description 2
- XQUPVDVFXZDTLT-UHFFFAOYSA-N 1-[4-[[4-(2,5-dioxopyrrol-1-yl)phenyl]methyl]phenyl]pyrrole-2,5-dione Chemical compound O=C1C=CC(=O)N1C(C=C1)=CC=C1CC1=CC=C(N2C(C=CC2=O)=O)C=C1 XQUPVDVFXZDTLT-UHFFFAOYSA-N 0.000 description 1
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- 239000010407 anodic oxide Substances 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 238000005266 casting Methods 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 238000002788 crimping Methods 0.000 description 1
- 238000005137 deposition process Methods 0.000 description 1
- 238000013461 design Methods 0.000 description 1
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- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 229920003002 synthetic resin Polymers 0.000 description 1
- 239000000057 synthetic resin Substances 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N10/00—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects
- H10N10/10—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects operating with only the Peltier or Seebeck effects
- H10N10/13—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects operating with only the Peltier or Seebeck effects characterised by the heat-exchanging means at the junction
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/38—Cooling arrangements using the Peltier effect
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/42—Fillings or auxiliary members in containers or encapsulations selected or arranged to facilitate heating or cooling
- H01L23/427—Cooling by change of state, e.g. use of heat pipes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
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- Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
Abstract
A heat exchange unit is constituted of a thermoelectric module and a heat exchanger. The thermoelectric module includes an upper electrode, a lower electrode, and a plurality of thermoelectric elements interposed between the upper electrode and the lower electrode, wherein the heat exchanger composed of aluminum or aluminum alloy having high thermal conductivity is attached to the upper electrode and/or the lower electrode via an insulating layer. The surface roughness of the heat exchanger adjoined to the insulating layer is controlled to be less than 4.7 [mu]m and greater than 0.1 [mu]m. This prevents cracks and fractures from being formed in the insulating layer, which is thus improved in adhesion with the heat exchanger. Thus, it is possible to demonstrate high heat-absorption/dissipation performance and high reliability in the heat exchange unit due to a reduced thermal resistance between the thermoelectric module and the heat exchanger.
Description
Technical field
The present invention relates to heat exchange unit, it comprises electrothermal module, and dissimilar thermoelectric elements is alternately arranged and between heat absorption electrode and heat sink electrodes, is electrically connected in series in electrothermal module.
Background technology
Usually, electrothermal module is by exploitation be designed to make the thermoelectric element that is made up of P type semiconductor and N type semiconductor alternately to be arranged in and via being connected in series such as the such metal of brazing metal and remaining between heat absorption electrode and the heat sink electrodes.Various documents disclose heat exchange unit, and wherein, heat exchanger is attached to the heat absorption electrode or the heat sink electrodes of electrothermal module, so that improve radiating efficiency.
Patent documentation 1: japanese unexamined patent is announced No.2003-332642
Patent documentation 2: japanese unexamined patent is announced No.2006-234362
Recently, the filler that is made up of alumina powder and aluminium nitride has been used and has been distributed to equably (this resin bed has very poor thermal conductivity originally) in the insulating resin layer, so that improve thermal conductivity.This heat exchange unit 40 that is disclosed in the patent documentation 1 does not consider that the surface roughness of heat exchanger 41, the thickness of insulating barrier 42 and the filler (as insulating resin layer) that joins in the insulating barrier 42 design.Even the aluminium alloy that has experienced the anodic oxide coating by the surface when heat exchanger 41 also is difficult to improve the bonding between heat exchanger 41 and the insulating barrier 42 and is difficult to reduce the thermal resistance between them when constituting.
The surface of radiating component 54 and heat-absorbing member 52 is by roughening, so that resin piece 56a and 57a can easily be penetrated in hole and the defective, wherein disperses into to understand generation crackle and crack so that improve in the insulating resin layer of thermal conductivity at filler.This because of the distribution meeting of " hard " filler owing to the pressurization in the hot pressing binding process causes in insulating resin layer, occurring little crackle and crack.Even, insulating resin layer also can repeat to take place this defective when hardening through applying varnish gum.
Summary of the invention
The purpose of this invention is to provide a kind of heat exchange unit, wherein, control heat exchanger aspect surface roughness so that prevent in insulating resin layer, to form crackle and crack, improves the bonding between heat exchanger and the insulating resin layer thus.Heat exchange unit is owing to the thermal resistance of the reduction between heat exchanger and the insulating resin layer has height reliability.
Heat exchange unit comprises heat exchanger and electrothermal module, and this electrothermal module comprises top electrode, bottom electrode and a plurality of thermoelectric element.Said thermoelectric element is plugged on and is electrically connected in series between top electrode and the bottom electrode.Heat exchanger is attached to the surface of top electrode and/or the surface of bottom electrode via insulating barrier.Be controlled as less than 4.7 μ m with the surface roughness of the heat exchanger of insulating barrier adjacency.Here, surface roughness for example is according to Japanese Industrial Standards, and promptly JISB0601 estimates.
Measurement result according to the specimen of heat exchange unit; Can be equal to or less than in surface roughness Ra and can prevent under the situation that 4.7 μ m (wherein Ra≤4.7 μ m) and surface roughness Ra be equal to or greater than 1.0 μ m (wherein Ra>=1.0 μ m) that crackle and crack are formed between insulating barrier and the heat exchanger at the interface, and can form insulating barrier equably with specific thickness.Even during less than 100 μ m, also can prevent in insulating barrier, to form crackle and crack at the thickness of insulating barrier.Can further reduce the thickness of insulating barrier,, improve heat heat absorption/heat dispersion thus to reduce thermal resistance thus.
Consider manufacturability and manufacturing cost, preferably, heat exchanger comprises the aluminum or aluminum alloy with high-termal conductivity.Preferably, insulating barrier comprises that single insulating resin bed or insulating resin layer with high-termal conductivity are layered in the composite bed on the heat-resisting aluminium lamination.Preferably, filler is spread in the insulating resin that is used in the insulating barrier or is scribbled in the insulating resin of varnish.Preferably, filler comprises alumina powder, aluminum nitride powder, magnesia powder or carborundum powder.Preferred insulating resin is selected from polyimide resin or epoxy resin.To this, insulating resin layer becomes plate-like shape via embossing, or their are scribbled varnish and are cured.
Owing to optimized the surface roughness of heat exchanger; Can prevent that crackle and crack are formed in the insulating barrier; The bonding between heat exchanger and the insulating resin layer can be improved, and heat absorption/heat dispersion and reliability that thermal resistance is also improved heat exchange unit thus can be reduced.
Description of drawings
Will with reference to appended accompanying drawing describe in detail of the present invention these with other purposes, aspect and embodiment.
Figure 1A has shown the longitdinal cross-section diagram that is contiguous to first heat exchanger of bottom electrode via insulating barrier.
Figure 1B is that a plurality of thermoelectric elements are arranged and are attached to the longitdinal cross-section diagram on the bottom electrode of first heat exchanger.
Fig. 1 C is a longitdinal cross-section diagram; Wherein, Be contiguous to second heat exchanger and the combination of first heat exchanger shown in Figure 1B of top electrode via insulating barrier; And wherein, thermoelectric element is plugged between the top electrode of bottom electrode and second heat exchanger of first heat exchanger, has comprised the heat exchange unit according to the electrothermal module of first embodiment of the invention so that form.
Fig. 2 A is the arrange vertical view of pattern of bottom electrode.
Fig. 2 B is the arrange vertical view of pattern of top electrode.
Fig. 3 has shown the view that is used for measuring to the heat exchange unit of first embodiment maximum caloric receptivity Qmax thermal insulation case.
Fig. 4 is the view of method that has shown the withstand voltage WS of the heat exchange unit that is used to measure first embodiment.
Fig. 5 be shown to the specimen of the heat exchange unit of first embodiment, withstand voltage WS is with respect to the figure of the measurement result of surface roughness Ra.
Fig. 6 A is the lip-deep end view that in heat exchange unit according to a second embodiment of the present invention, via insulating barrier bottom electrode is formed on water-cooled first heat exchanger.
Fig. 6 B has shown that top electrode is attached to the end view of the upper end of thermoelectric element, and this thermoelectric element is arranged on the bottom electrode of first heat exchanger shown in Fig. 6 A.
Fig. 6 C is the end view that is contiguous to water-cooled second heat exchanger of top electrode via insulating barrier.
Fig. 7 A is the vertical view that has shown the pattern of arranging of bottom electrode.
Fig. 7 B is the vertical view that has shown the pattern of arranging of top electrode.
Fig. 8 has shown the view that is used for measuring to the heat exchange unit of second embodiment vacuum chamber of maximum caloric receptivity Qmax.
Fig. 9 be shown to the specimen of the heat exchange unit of second embodiment, withstand voltage WS is with respect to the figure of the measurement result of surface roughness Ra.
Figure 10 A has shown in according to the heat exchange unit of third embodiment of the invention to be formed on the surface of water-cooled first heat exchanger and the end view of first bottom electrode on the dorsal part and first top electrode via insulating barrier.
Figure 10 B is an end view, has shown that second top electrode is attached to the upper end that is arranged in first thermoelectric element on first bottom electrode, and second bottom electrode is attached to the lower end of second thermoelectric element that is arranged in first top electrode below.
Figure 10 C has shown that water-cooled second heat exchanger is contiguous to second top electrode via insulating barrier and water-cooled the 3rd heat exchanger is contiguous to the end view of second bottom electrode.
Figure 11 A is the vertical view that has shown the pattern of arranging of first bottom electrode and first top electrode.
Figure 11 B is the vertical view that has shown the pattern of arranging of second bottom electrode and second top electrode.
Figure 12 has shown the view that is used for measuring to the heat exchange unit of the 3rd embodiment the vacuum chamber of maximum caloric receptivity Qmax.
Figure 13 be shown to the specimen of the heat exchange unit of the 3rd embodiment, withstand voltage WS is with respect to the figure of the measurement result of surface roughness Ra.
Figure 14 is the longitdinal cross-section diagram of the example of heat exchange unit.
Figure 15 is the longitdinal cross-section diagram of another example of heat exchange unit.
Embodiment
To the present invention be described in more detail through example with reference to accompanying drawing.
1, first embodiment
To 1C the heat exchange unit 10 according to first embodiment of the invention be described with reference to Figure 1A.Shown in Fig. 1 C, heat exchange unit 10 comprises first interchanger (as the low-temperature receiver (heatsink) of heat radiation or heat-absorption air cooling) 11, be formed on the lip-deep insulating barrier 12 of first heat exchanger 11, be arranged on bottom electrode (as heat radiation or heat absorption electrode) 13 on the insulating barrier 12, be attached to a plurality of thermoelectric elements 14 on the bottom electrode 13, be attached to top electrode (as heat radiation or heat absorption electrode) 15, second heat exchanger (as low-temperature receiver of heat radiation or heat-absorption air cooling) 16 and the lip-deep insulating barrier 17 that is formed on second heat exchanger 16 on the thermoelectric element 14.The pair of terminal (all not shown) that is connected to pair of lead wires is formed on the end of bottom electrode 13.
Electrothermal module M (see figure 3) comprises some thermoelectric elements 14, and these thermoelectric elements are via being electrically connected in series between bottom electrode 13 and the top electrode 15 such as the such bond of scolder.
Each comprises the aluminum or aluminum alloy with high-termal conductivity first heat exchanger 11 and second heat exchanger 16; Wherein, the surface (being contiguous to insulating barrier 17) of the surface of first heat exchanger 11 (being contiguous to insulating barrier 12) and second heat exchanger 16 each by fine finishining 5 μ m or littler surface roughness Ra are arranged.In addition, a plurality of fin 11a are outstanding downwards from first heat exchanger 11, and a plurality of fin 16a project upwards from second heat exchanger 16 simultaneously.
Comprise that the mode that the thermoelectric element 14 of P type semiconductor and N type semiconductor is alternately arranged with P type semiconductor and N type semiconductor is electrically connected in series between bottom electrode 13 and the top electrode 15.Thermoelectric element 14 via SnSb alloy, AuSn alloy or SnAgCu alloy brazed to bottom electrode 13 and top electrode 15.To the terminal nickel plating of thermoelectric element 14, so that thermoelectric element 14 can easily be soldered to bottom electrode 13 and top electrode 15.
Preferably, thermoelectric element 14 comprises the sintering thermoelectric material Bi-Te that at room temperature has high thermoelectricity capability.Specifically, preferably use P type semiconductor that comprises the Bi-Sb-Te ternary compound and the N type semiconductor that comprises the Bi-Sb-Te-Se quaternary compound.In the present embodiment, P type semiconductor comprises Bi
0.5Sb
1.5Te
3, and N type semiconductor comprises Bi
1.9Sb
0.1Te
2.6Se
0.4Wherein these semiconductors experience liquid hardenings (liquid quenching); So that produce paper tinsel sprills (foil powder); Make this paper tinsel sprills experience hot pressing so that form block then, this block is cut into some sheets subsequently, and each sheet has the given size that 1.35mm is long, 1.35mm is wide and 1.5mm is high.
(a) manufacturing of heat exchange unit 10
At first, prepare first heat exchanger 11 (as heat radiation air cooling heat sink), be formed on the face of this first heat exchanger so that have close-burning insulating barrier 12, fin 11a is formed on the opposite face of first heat exchanger simultaneously.Similarly, prepare second heat exchanger 16 (as the low-temperature receiver of heat-absorption air cooling), be formed on the face of this second heat exchanger so that have close-burning insulating barrier 17, and fin 16a is formed on the opposite face of this second heat exchanger.In addition, prepare bottom electrode 13 (as heat sink electrodes) and top electrode 15 (as the heat absorption electrode) in advance.And then preparation in advance comprises the thermoelectric element 14 of P type semiconductor and N type semiconductor.
Each comprises the aluminum or aluminum alloy with high-termal conductivity first heat exchanger 11 and second heat exchanger 16.Each fine finishining of surface (being contiguous to insulating barrier 17) of the surface of first heat exchanger 11 (being contiguous to insulating barrier 12) and second heat exchanger 16 goes out 5 μ m or littler surface roughness Ra.Insulating barrier 12 and 17 will be through comprising Al
2O
3, AlN, MgO or SiC fleur spread to and have in close-burning polyimide resin layer or the epoxy resin layer and form.Alternatively, they can be formed on composite bed such on the heat-resisting aluminium lamination with polyimide resin layer that is scattered with filler or epoxy resin layer and form.Here, insulating barrier 12 and 17 forms through embossing (crimping) board-like material.Alternatively, board-like material is applied varnish, these board-like materials are cured so that form insulating barrier 12 and 17 subsequently.Each comprises copper film or tin-copper alloy film bottom electrode 13 and top electrode 15, and each formation has the regulation electrode patterns of 70 μ m to the specific thickness of 200 μ m.End (or opposite end along the longitudinal direction) to P type and N type semiconductor applies nickel plating.
The bottom electrode 13 that comprises copper film or tin-copper alloy film and have a regulation electrode patterns shown in Fig. 2 A is linked to the insulating barrier 12 of first heat exchanger 11.Subsequently, comprise that the thermoelectric element 14 of P type and N type semiconductor alternately is arranged on the bottom electrode 13, shown in Figure 1B, wherein, the lower end of thermoelectric element 14 is attached on the bottom electrode 13 via brazing alloy (for example SnSb alloy, AuSn alloy and SnAgCu alloy).In addition, comprise that copper film or tin-copper alloy film and the top electrode 15 with the regulation electrode patterns shown in Fig. 2 B are arranged on the upper end of thermoelectric element 14.
After this, top electrode 15 is attached to the upper end of thermoelectric element 14 via brazing alloy (for example SnSb alloy, AuSn alloy and SnAgCu alloy).Thus, the thermoelectric element 14 that comprises P type and N type semiconductor is alternately arranged and is electrically connected in series between bottom electrode 13 and the top electrode 15.
At last, shown in Fig. 1 C, the insulating barrier 17 of second heat exchanger 16 contacts with top electrode 15; Then, top electrode 15 is attached to insulating barrier 17.This has accomplished the manufacturing of the heat exchange unit 10 of first embodiment.
(b) purposes of heat exchange unit 10
The heat exchange unit 10 of first embodiment can be used to the temperature of control gaseous material.That is, heat exchange unit 10 is arranged so that the fin 16a of second heat exchanger 16 (as the low-temperature receiver of heat-absorption air cooling) is placed into and receives in the temperature controlled gaseous matter.In this state; Electric power is applied to electrothermal module M; Wherein thermoelectric element 14 is electrically connected in series between " heat radiation " bottom electrode 13 and " heat absorption " top electrode 15, absorbs from the heat that receives temperature controlled gaseous matter with the fin 16a through second heat exchanger 16 so that top electrode 15 is cooled.In this connection, heat be created in the heated bottom electrode 13 but via the fin 11a heat radiation of first heat exchanger 11.
(c) measurement of maximum caloric receptivity Qmax
Use the heat exchange unit 10 of first embodiment, can measure maximum caloric receptivity (or heat absorptivity) Qmax that constitutes Performance Evaluation benchmark (performance evaluation benchmark) through following process.Based on heat exchange unit 10 manufacturing test sample A1 to A3, B1 to B4 and C1 to C3.As shown in Figure 3, thermal insulation case X is used at the opening part of case heat exchange unit 10 (being specimen A1-A3, B1-B4 and the C1-C3 of heat exchange unit) is installed.
Hereinbefore, heat exchange unit A1 is manufactured so that and comprises aluminium oxide (Al
2O
3) filler of powder is dispersed in the polyimide resin plate, forms the insulating barrier 12 and 17 with 15 μ m thickness thus.Heat exchange unit A2 is fabricated to the feasible aluminium oxide (Al that comprises
2O
3) filler of powder is dispersed in the polyimide resin that scribbles varnish, forms the insulating barrier 12 and 17 with 15 μ m thickness thus.Heat exchange unit A3 is manufactured so that and comprises aluminium oxide (Al
2O
3) filler of powder is dispersed in the epoxy resin board, forms the insulating barrier 12 and 17 with 20 μ m thickness thus.
In addition, heat exchange unit B1 is manufactured so that the filler that comprises aluminium nitride (AlN) powder is dispersed in the epoxy resin board, forms the insulating barrier 12 and 17 with 20 μ m thickness thus.Heat exchange unit B2 is fabricated to the feasible aluminium oxide (Al that comprises
2O
3) filler of powder is dispersed in the epoxy resin that scribbles varnish, forms the insulating barrier 12 and 17 with 20 μ m thickness thus.Heat exchange unit B3 is manufactured so that the filler that comprises magnesia (MgO) powder is dispersed in the epoxy resin that scribbles varnish, forms the insulating barrier 12 and 17 with 20 μ m thickness thus.Heat exchange unit B4 is manufactured so that the filler that comprises carborundum (SiC) powder is dispersed in the epoxy resin that scribbles varnish, forms the insulating barrier 12 and 17 with 20 μ m thickness thus.
And then heat exchange unit C1 is manufactured so that and comprises aluminium oxide (Al
2O
3) filler of powder is dispersed in the polyimide resin plate on the thick heat-resisting aluminium lamination of 10 μ m, forms the insulating barrier 12 and 17 with 100 μ m thickness thus.Heat exchange unit C2 is fabricated to the feasible aluminium oxide (Al that comprises
2O3) filler of powder is dispersed in the epoxy resin board on the thick heat-resisting aluminium lamination of 10 μ m, forms the insulating barrier 12 and 17 with 50 μ m thickness thus.Heat exchange unit C3 is manufactured so that and comprises aluminium oxide (Al
2O
3) filler of powder is dispersed in the epoxy resin that scribbles varnish on the thick heat-resisting aluminium lamination of 10 μ m, forms the insulating barrier 12 and 17 with 50 μ m thickness thus.
(d) measure withstand voltage WS
Based on heat exchange unit A1, A2 and A3 through the lip-deep surface roughness Ra with surfaces insulating barrier 12 adjacency and second heat exchanger 16 that change first heat exchanger 11 with insulating barrier 17 adjacency make heat exchange unit A11 to A19, A21 to A29 and A31 to A39.Heat exchange unit A11-A19, A21-A29 and A31-A39 to having used different surface roughness Ra value measure withstand voltage WS.
Specifically; Change surface roughness Ra (on first heat exchanger 11 and surfaces insulating barrier 12 adjacency and on second heat exchanger 16 and surfaces insulating barrier 17 adjacency) to heat exchange unit A1; So that heat exchange unit A11 has the surface roughness of 0.3 μ m, heat exchange unit A12 has the surface roughness of 0.5 μ m, and heat exchange unit A13 has the surface roughness of 1.0 μ m; Heat exchange unit A14 has the surface roughness of 1.6 μ m; Heat exchange unit A15 has the surface roughness of 2.2 μ m, and heat exchange unit A16 has the surface roughness of 3.2 μ m, and heat exchange unit A17 has the surface roughness of 4.4 μ m; Heat exchange unit A18 has the surface roughness of 4.7 μ m, and heat exchange unit A19 has the surface roughness of 5.1 μ m.In addition, make the heat exchange unit A1a of surface roughness and heat exchange unit A1b, and measure withstand voltage WS with surface roughness of 0.1 μ m with 0.07 μ m based on heat exchange unit A1.The measured results show is in form 1-1, and wherein insulating barrier 12 (17) is the thick polyimide plates of 15 μ m, and filler comprises aluminium oxide (Al
2O
3).
Form 1-1
Type | A1a | A1b | A11 | A12 | A13 | A14 | A15 | A16 | A17 | A18 | A19 |
Ra(μm) | 0.07 | 0.1 | 0.3 | 0.5 | 1.0 | 1.6 | 2.2 | 3.2 | 4.4 | 4.7 | 5.1 |
WS(kV) | 2.0 | 2.0 | 2.0 | 2.0 | 2.0 | 2.0 | 2.0 | 1.75 | 1.75 | 1.75 | 0.25 |
Qmax(W) | 98 | 113 | 113 | 113 | 113 | 113 | 113 | 113 | 113 | 113 | 113 |
And then, change surface roughness Ra to heat exchange unit A2, so that heat exchange unit A21 has the surface roughness of 0.3 μ m; Heat exchange unit A22 has the surface roughness of 0.5 μ m; Heat exchange unit A23 has the surface roughness of 1.0 μ m, and heat exchange unit A24 has the surface roughness of 1.3 μ m, and heat exchange unit A25 has the surface roughness of 2.4 μ m; Heat exchange unit A26 has the surface roughness of 3.2 μ m; Heat exchange unit A27 has the surface roughness of 4.3 μ m, and heat exchange unit A28 has the surface roughness of 4.7 μ m, and heat exchange unit A29 has the surface roughness of 5.1 μ m.In addition, make the heat exchange unit A2b of the heat exchange unit A2a of surface roughness and surface roughness and measure withstand voltage WS based on heat exchange unit A2 with 0.1 μ m with 0.07 μ m.The measured results show is in form 1-2, and wherein insulating barrier 12 (17) is the thick polyimide varnish of 15 μ m (polymide varnish), and filler comprises aluminium oxide (Al
2O
3).
Form 1-2
Type | A2a | A2b | A21 | A22 | A23 | A24 | A25 | A26 | A27 | A28 | A29 |
Ra(μm) | 0.07 | 0.1 | 0.3 | 0.5 | 1.0 | 1.3 | 2.4 | 3.2 | 4.3 | 4.7 | 5.1 |
WS(kV) | 2.0 | 2.0 | 2.0 | 2.0 | 2.0 | 2.0 | 2.0 | 1.75 | 1.75 | 1.75 | 0.25 |
Qmax(W) | 98 | 114 | 114 | 114 | 114 | 114 | 114 | 114 | 114 | 114 | 114 |
And then, change surface roughness Ra to heat exchange unit A3, so that heat exchange unit A31 has the surface roughness of 0.3 μ m; Heat exchange unit A32 has the surface roughness of 0.5 μ m; Heat exchange unit A33 has the surface roughness of 1.0 μ m, and heat exchange unit A34 has the surface roughness of 1.6 μ m, and heat exchange unit A35 has the surface roughness of 2.2 μ m; Heat exchange unit A36 has the surface roughness of 3.2 μ m; Heat exchange unit A37 has the surface roughness of 4.4 μ m, and heat exchange unit A38 has the surface roughness of 4.7 μ m, and heat exchange unit A39 has the surface roughness of 5.0 μ m.In addition, make the heat exchange unit A3b of the heat exchange unit A3a of surface roughness and surface roughness and measure withstand voltage WS based on heat exchange unit A3 with 0.1 μ m with 0.07 μ m.The measured results show is in form 1-3, and wherein insulating barrier 12 (17) is the thick epoxy plates of 20 μ m, and filler comprises aluminium oxide (Al
2O
3).
Form 1-3
Type | A3a | A3b | A31 | A32 | A33 | A34 | A35 | A36 | A37 | A38 | A39 |
Ra(μm) | 0.07 | 0.1 | 0.3 | 0.5 | 1.0 | 1.6 | 2.2 | 3.2 | 4.4 | 4.7 | 5.0 |
WS(kV) | 2.0 | 2.0 | 2.0 | 2.0 | 2.0 | 2.0 | 2.0 | 2.0 | 2.0 | 2.0 | 0.25 |
Qmax(W) | 96 | 113 | 113 | 113 | 113 | 113 | 113 | 113 | 113 | 113 | 113 |
As shown in Figure 4; Use is contiguous to the heat exchanger 11 (16) of insulating barrier 12 (17) and measures withstand voltage WS; Be formed with the regulation pattern at this insulating barrier electrode 13 (15), wherein, a plurality of probe P are arranged on the assigned position place of electrode 13 (15) and contact with electrode 13 (15) subsequently.Assigned voltage V is applied to probe P five seconds, so that measure the withstand voltage WS when leakage current surpasses 5mA.
About the measurement result among form 1-1,1-2 and the 1-3 of heat exchange unit A11-A19, A21-A29, A31-A39 is plotted on the curve chart of Fig. 5; On behalf of surface roughness Ra (μ m) and its vertical axes, its trunnion axis represent withstand voltage WS (kV), draws thus and measures curve (or dotted line) A1, A2 and A3.Above-mentioned measurement result shown in Figure 5 has clearly illustrated as long as then withstand voltage WS is just fine less than 4.7 μ m for surface roughness Ra to 1-3 with table 1-1, but withstand voltage descends fast when surface roughness Ra surpasses 4.7 μ m.Thus, preferably, the surface roughness Ra of heat exchanger 11 (16) is less than 4.7 μ m.
Next, based on heat exchange unit B 1, B2 and B3 through the lip-deep surface roughness Ra that changes first heat exchanger 11 with insulating barrier 17 adjacency with the lip-deep of insulating barrier 12 adjacency and second heat exchanger 16 make heat exchange unit B11 to B19, B21 to B29, B31 to B39 and B41 to B49.Heat exchange unit B11-B19, B21-B29, B31-B39 and B41-B49 to having used different surface roughness Ra value measure withstand voltage WS.
Specifically; Change surface roughness Ra (on first heat exchanger 11 and surfaces insulating barrier 12 adjacency and on second heat exchanger 16 and lip-deep surfaces insulating barrier 17 adjacency) to heat exchange unit B 1; So that heat exchange unit B11 has the surface roughness of 0.3 μ m, heat exchange unit B12 has the surface roughness of 0.5 μ m, and heat exchange unit B13 has the surface roughness of 1.0 μ m; Heat exchange unit B 14 has the surface roughness of 1.6 μ m; Heat exchange unit B15 has the surface roughness of 2.2 μ m, and heat exchange unit B16 has the surface roughness of 3.2 μ m, and heat exchange unit B17 has the surface roughness of 4.4 μ m; Heat exchange unit B18 has the surface roughness of 4.7 μ m, and heat exchange unit B19 has the surface roughness of 5.2 μ m.In addition, make the heat exchange unit B1a of surface roughness and heat exchange unit B1b, and measure withstand voltage WS with surface roughness of 0.1 μ m with 0.07 μ m based on heat exchange unit B1.The measured results show is in form 2-1, and wherein insulating barrier 12 (17) is the thick epoxy plates of 20 μ m, and filler comprises aluminium nitride (A1N).
Form 2-1
Type | B1a | B1b | B11 | B12 | B13 | B14 | B15 | B16 | B17 | B18 | B19 |
Ra(μm) | 0.07 | 0.1 | 0.3 | 0.5 | 1.0 | 1.6 | 2.2 | 3.2 | 4.4 | 4.7 | 5.2 |
WS(kV) | 2.0 | 2.0 | 2.0 | 2.0 | 2.0 | 2.0 | 2.0 | 2.0 | 2.0 | 2.0 | 0.25 |
Qmax(W) | 96 | 116 | 116 | 116 | 116 | 116 | 116 | 116 | 116 | 116 | 116 |
In addition, change surface roughness Ra to heat exchange unit B2, so that heat exchange unit B21 has the surface roughness of 0.3 μ m; Heat exchange unit B22 has the surface roughness of 0.5 μ m; Heat exchange unit B23 has the surface roughness of 1.0 μ m, and heat exchange unit B24 has the surface roughness of 1.6 μ m, and heat exchange unit B25 has the surface roughness of 2.1 μ m; Heat exchange unit B26 has the surface roughness of 3.3 μ m; Heat exchange unit B27 has the surface roughness of 4.4 μ m, and heat exchange unit B28 has the surface roughness of 4.7 μ m, and heat exchange unit B29 has the surface roughness of 5.1 μ m.In addition, make the heat exchange unit B2a of surface roughness and heat exchange unit B2b, and measure withstand voltage WS with surface roughness of 0.1 μ m with 0.07 μ m based on heat exchange unit B2.The measured results show is in form 2-2, and wherein insulating barrier 12 (17) is the thick epoxy resin varnishs of 20 μ m, and filler comprises aluminium oxide (Al
2O
3).
Form 2-2
Type | B2a | B2b | B21 | B22 | B23 | B24 | B25 | B26 | B27 | B28 | B29 |
Ra(μm) | 0.07 | 0.1 | 0.3 | 0.5 | 1.0 | 1.6 | 2.1 | 3.3 | 4.4 | 4.7 | 5.1 |
WS(kV) | 2.0 | 2.0 | 2.0 | 2.0 | 2.0 | 2.0 | 2.0 | 1.75 | 1.75 | 1.75 | 0.5 |
Qmax(W) | 96 | 115 | 115 | 115 | 115 | 115 | 115 | 115 | 115 | 115 | 115 |
And then, change surface roughness Ra to heat exchange unit B3, so that heat exchange unit B31 has the surface roughness of 0.3 μ m; Heat exchange unit B32 has the surface roughness of 0.5 μ m; Heat exchange unit B33 has the surface roughness of 1.0 μ m, and heat exchange unit B34 has the surface roughness of 1.6 μ m, and heat exchange unit B35 has the surface roughness of 2.2 μ m; Heat exchange unit B36 has the surface roughness of 3.3 μ m; Heat exchange unit B37 has the surface roughness of 4.5 μ m, and heat exchange unit B38 has the surface roughness of 4.7 μ m, and heat exchange unit B39 has the surface roughness of 5.1 μ m.In addition, make the heat exchange unit B3a of surface roughness and heat exchange unit B3b, and measure withstand voltage WS with surface roughness of 0.1 μ m with 0.07 μ m based on heat exchange unit B3.The measured results show is in form 2-3, and wherein insulating barrier 12 (17) is the thick epoxy resin varnish of 20 μ m (epoxyy resin), and filler comprises magnesia (MgO).
Form 2-3
Type | B3a | B3b | B31 | B32 | B33 | B34 | B35 | B36 | B37 | B38 | B39 |
Ra(μm) | 0.07 | 0.1 | 0.3 | 0.5 | 1.0 | 1.6 | 2.2 | 3.3 | 4.5 | 4.7 | 5.1 |
WS(kV) | 2.0 | 2.0 | 2.0 | 2.0 | 2.0 | 2.0 | 2.0 | 1.75 | 1.75 | 1.75 | 0.25 |
Qmax(W) | 98 | 114 | 114 | 114 | 114 | 114 | 114 | 114 | 114 | 114 | 114 |
And, change surface roughness Ra to heat exchange unit B4, so that heat exchange unit B41 has the surface roughness of 0.3 μ m; Heat exchange unit B42 has the surface roughness of 0.5 μ m; Heat exchange unit B43 has the surface roughness of 1.0 μ m, and heat exchange unit B44 has the surface roughness of 1.6 μ m, and heat exchange unit B45 has the surface roughness of 2.2 μ m; Heat exchange unit B46 has the surface roughness of 3.4 μ m; Heat exchange unit B47 has the surface roughness of 4.5 μ m, and heat exchange unit B48 has the surface roughness of 4.7 μ m, and heat exchange unit B49 has the surface roughness of 5.1 μ m.In addition, make the heat exchange unit B4a of surface roughness and heat exchange unit B4b, and measure withstand voltage WS with surface roughness of 0.1 μ m with 0.07 μ m based on heat exchange unit B4.The measured results show is in form 2-4, and wherein insulating barrier 12 (17) is the thick epoxy resin varnishs of 20 μ m, and filler comprises carborundum (SiC).
Form 2-4
Type | B4a | B4b | B41 | B42 | B43 | B44 | B45 | B46 | B47 | B48 | B49 |
Ra(μm) | 0.07 | 0.1 | 0.3 | 0.5 | 1.0 | 1.6 | 2.2 | 3.4 | 4.5 | 4.7 | 5.1 |
WS(kV) | 2.0 | 2.0 | 2.0 | 2.0 | 2.0 | 2.0 | 2.0 | 1.75 | 1.75 | 1.75 | 0.25 |
Qmax(W) | 98 | 115 | 115 | 115 | 115 | 115 | 115 | 115 | 115 | 115 | 115 |
About the measurement result among form 2-1,2-2,2-3 and the 2-4 of heat exchange unit B11-B 19, B21-B29, B31-B39 and B41-B49 is plotted on the curve chart of Fig. 5, draws thus and measure curve (or dotted line) B1, B2, B3 and B4.Above-mentioned measurement result shown in Figure 5 has clearly illustrated as long as then withstand voltage WS is just fine less than 4.7 μ m for surface roughness Ra to 2-4 with table 2-1, but withstand voltage descends fast when surface roughness Ra surpasses 4.7 μ m.Thus, preferably, the surface roughness Ra of heat exchanger 11 (16) is less than 4.7 μ m.
Next, based on heat exchange unit C1, C2 and C3 through change on first heat exchanger 11 and surfaces insulating barrier 12 adjacency and the lip-deep surface roughness Ra with insulating barrier 17 adjacency of second heat exchanger 16 make heat exchange unit C11 to C19, C21 to C29 and C31 to C39.Heat exchange unit C11-C19, C21-C29 and C31-C39 to having used different surface roughness Ra value measure withstand voltage WS.
Specifically; Change surface roughness Ra (on first heat exchanger 11 and surfaces insulating barrier 12 adjacency and on second heat exchanger 16 and surfaces insulating barrier 17 adjacency) to heat exchange unit C1; So that heat exchange unit C11 has the surface roughness of 0.3 μ m, heat exchange unit C12 has the surface roughness of 0.5 μ m, and heat exchange unit C13 has the surface roughness of 1.0 μ m; Heat exchange unit C14 has the surface roughness of 1.5 μ m; Heat exchange unit C15 has the surface roughness of 2.2 μ m, and heat exchange unit C16 has the surface roughness of 3.2 μ m, and heat exchange unit C17 has the surface roughness of 4.4 μ m; Heat exchange unit C18 has the surface roughness of 4.7 μ m, and heat exchange unit C19 has the surface roughness of 5.1 μ m.In addition, make the heat exchange unit C1a of surface roughness and heat exchange unit C1b, and measure withstand voltage WS with surface roughness of 0.1 μ m with 0.06 μ m based on heat exchange unit C1.The measured results show is in form 3-1, and wherein insulating barrier 12 (17) is that the thick polyimide plate of 100 μ m adds the heat-resisting aluminium lamination that 10 μ m are thick, and filler comprises aluminium oxide (Al
2O
3).
Form 3-1
Type | C1a | C1b | C11 | C12 | C13 | C14 | C15 | C16 | C17 | C18 | C19 |
Ra(μm) | 0.06 | 0.1 | 0.3 | 0.5 | 1.0 | 1.5 | 2.2 | 3.2 | 4.4 | 4.7 | 5.1 |
WS(kV) | 2.5 | 2.5 | 2.5 | 2.5 | 2.5 | 2.5 | 2.5 | 2.5 | 2.25 | 2.25 | 0.5 |
Qmax(W) | 91 | 110 | 110 | 110 | 110 | 110 | 110 | 110 | 110 | 110 | 110 |
In addition, change surface roughness Ra to heat exchange unit C2, so that heat exchange unit C21 has the surface roughness of 0.3 μ m; Heat exchange unit C22 has the surface roughness of 0.5 μ m; Heat exchange unit C23 has the surface roughness of 1.0 μ m, and heat exchange unit C24 has the surface roughness of 1.5 μ m, and heat exchange unit C25 has the surface roughness of 2.2 μ m; Heat exchange unit C26 has the surface roughness of 3.2 μ m; Heat exchange unit C27 has the surface roughness of 4.4 μ m, and heat exchange unit C28 has the surface roughness of 4.7 μ m, and heat exchange unit C29 has the surface roughness of 5.1 μ m.In addition, make the heat exchange unit C2a of surface roughness and heat exchange unit C2b, and measure withstand voltage WS with surface roughness of 0.1 μ m with 0.06 μ m based on heat exchange unit C2.The measured results show is in form 3-2, and wherein insulating barrier 12 (17) is that the thick epoxy plate of 50 μ m adds the heat-resisting aluminium lamination that 10 μ m are thick, and filler comprises aluminium oxide (Al
2O
3).
Form 3-2
Type | C2a | C2b | C21 | C22 | C23 | C24 | C25 | C26 | C27 | C28 | C29 |
Ra(μm) | 0.06 | 0.1 | 0.3 | 0.5 | 1.0 | 1.5 | 2.2 | 3.2 | 4.4 | 4.7 | 5.1 |
WS(kV) | 2.5 | 2.5 | 2.5 | 2.5 | 2.5 | 2.5 | 2.5 | 2.5 | 2.25 | 2.25 | 0.5 |
Qmax(W) | 90 | 111 | 111 | 111 | 111 | 111 | 111 | 111 | 111 | 111 | 111 |
And then, change surface roughness Ra to heat exchange unit C3, so that heat exchange unit C31 has the surface roughness of 0.3 μ m; Heat exchange unit C32 has the surface roughness of 0.5 μ m; Heat exchange unit C33 has the surface roughness of 1.0 μ m, and heat exchange unit C34 has the surface roughness of 1.6 μ m, and heat exchange unit C35 has the surface roughness of 2.2 μ m; Heat exchange unit C36 has the surface roughness of 3.2 μ m; Heat exchange unit C37 has the surface roughness of 4.4 μ m, and heat exchange unit C38 has the surface roughness of 4.7 μ m, and heat exchange unit C39 has the surface roughness of 5.1 μ m.In addition, make the heat exchange unit C3a of surface roughness and heat exchange unit C3b, and measure withstand voltage WS with surface roughness of 0.1 μ m with 0.06 μ m based on heat exchange unit C3.The measured results show is in form 3-3, and wherein insulating barrier 12 (17) is that the thick epoxy resin varnish of 50 μ m adds the heat-resisting aluminium lamination that 10 μ m are thick, and filler comprises aluminium oxide (Al
2O
3).
Form 3-3
Type | C3a | C3b | C31 | C32 | C33 | C34 | C35 | C36 | C37 | C38 | C39 |
Ra(μm) | 0.06 | 0.1 | 0.3 | 0.5 | 1.0 | 1.6 | 2.2 | 3.2 | 4.4 | 4.7 | 5.1 |
WS(kV) | 2.5 | 2.5 | 2.5 | 2.5 | 2.5 | 2.5 | 2.5 | 2.5 | 2.5 | 2.25 | 0.75 |
Qmax(W) | 96 | 110 | 110 | 110 | 110 | 110 | 110 | 110 | 110 | 110 | 110 |
About the measurement result among form 3-1,3-2 and the 3-3 of heat exchange unit C11-C19, C21-C29 and C31-C39 is plotted on the curve chart of Fig. 5, draws thus and measure curve (or dotted line) C1, C2 and C3.Above-mentioned measurement result shown in Figure 5 has clearly illustrated as long as then withstand voltage WS is just fine less than 4.7 μ m for surface roughness Ra to 3-3 with table 3-1, but withstand voltage descends fast when surface roughness Ra surpasses 4.7 μ m.Thus, preferably, the surface roughness Ra of heat exchanger 11 (16) is less than 4.7 μ m.
2, second embodiment
First embodiment relates to the heat exchange unit 10 that comprises first heat exchanger 11 and second heat exchanger 16, and each all is used as air cooled low-temperature receiver said first and second heat exchangers, and this is not a kind of restriction; Therefore, can adopt water-cooled low-temperature receiver.Second embodiment is designed to use water-cooled low-temperature receiver as first and second heat exchangers.
To 6C the heat exchange unit 20 according to second embodiment of the invention be described with reference to Fig. 6 A.Shown in Fig. 6 C, heat exchange unit 20 comprises first interchanger (as the heat radiation or the water-cooled low-temperature receiver that absorbs heat) 21, be formed on the lip-deep insulating barrier 22 of first heat exchanger 21, (as heat radiation or the heat absorption electrode) 23 that be arranged on bottom electrode on the insulating barrier 22, be attached to a plurality of thermoelectric elements 24 on the bottom electrode 23, be attached to top electrode (as heat radiation or heat absorption electrode) 25, second heat exchanger (as the heat radiation or the water-cooled low-temperature receiver that absorbs heat) 26 on the thermoelectric element 24 and be formed on the lip-deep insulating barrier 27 of second heat exchanger 26.The pair of terminal (all not shown) that is connected to pair of lead wires is formed on the end of bottom electrode 23.
Electrothermal module M (see figure 8) comprises some thermoelectric elements 24, and these thermoelectric elements are via being electrically connected in series between bottom electrode 23 and the top electrode 25 such as the such bond of scolder.
Each comprises the aluminum or aluminum alloy with high-termal conductivity first heat exchanger 21 and second heat exchanger 26; Wherein, the surface (being contiguous to insulating barrier 27) of the surface of first heat exchanger 21 (being contiguous to insulating barrier 22) and second heat exchanger 26 each by fine finishining 5 μ m or littler surface roughness Ra are arranged.In addition, a plurality of conduit 21a (to allow coolant---be water---flows through with the direction of regulation, from right to left promptly) are formed in first heat exchanger 21, and a plurality of conduit 26a are formed in second heat exchanger 26 simultaneously.Shown in Fig. 7 A, a plurality of installing hole 21b are formed on the surface of first heat exchanger 21, so that bottom electrode 23 can not be arranged on it with top electrode 25.Shown in Fig. 7 B, a plurality of installing hole 26b are formed on the surface of second heat exchanger 26, so that bottom electrode 23 can not be arranged on it with top electrode 25.
Insulating barrier 22 and 27 each comprise having polyimide resin, epoxy resin or the alumite of 10 μ m to 100 μ m thickness.Preferably will include aluminium oxide (Al
2O
3), aluminium nitride (AlN), magnesia (MgO) or carborundum (SiC) and filler that have 15 μ m or littler average grain diameter spread in the insulating barrier 22 and 27 that includes polyimide resin or epoxy resin, improves thermal conductivity thus.The polyimide resin or the epoxy resin that in addition, preferably will be scattered with filler are layered on the insulating barrier 22 and 27 that comprises alumite.
Comprise that the mode that the thermoelectric element 24 of P type semiconductor and N type semiconductor is alternately arranged with P type semiconductor and N type semiconductor is electrically connected in series between bottom electrode 23 and the top electrode 25.Thermoelectric element 24 via SnSb alloy, AuSn alloy or SnAgCu alloy brazed to bottom electrode 23 and top electrode 25.The terminal nickel plating of thermoelectric element 24 is so that thermoelectric element 24 can easily be soldered to bottom electrode 23 and top electrode 25.
Preferably, thermoelectric element 24 comprises the sintering thermoelectric material Bi-Te that at room temperature has high thermoelectricity capability.Specifically, preferably use P type semiconductor that comprises the Bi-Sb-Te ternary compound and the N type semiconductor that comprises the Bi-Sb-Te-Se quaternary compound.In the present embodiment, P type semiconductor comprises Bi
0.5Sb
1.5Te
3, and N type semiconductor comprises Bi
1.9Sb
0.1Te
2.6Se
0.4, wherein these semiconductor experience liquid hardenings so that produce the paper tinsel sprills, make this paper tinsel sprills experience hot pressing so that form block then, and this block is cut into some sheets subsequently, and each sheet has the given size that 1.35mm is long, 1.35mm is wide and 1.5mm is high.
(a) manufacturing of heat exchange unit 20
At first; Prepare first heat exchanger 21 (as heat radiation water-cooled heat sink); Be formed on the surface of this first heat exchanger so that have close-burning insulating barrier 22, and a plurality of conduit 21a is formed on the inside of this first heat exchanger, flows through to allow coolant (being water).Similarly; Prepare second heat exchanger 26 (as the water-cooled low-temperature receiver of heat absorption); Be formed on the surface of this second heat exchanger so that have close-burning insulating barrier 27, and a plurality of conduit 26a is formed on the inside of this second heat exchanger, flows through to allow coolant (being water).In addition, prepare bottom electrode 23 (as heat sink electrodes) and top electrode 25 (as the heat absorption electrode) in advance.And then preparation in advance comprises the thermoelectric element 24 of P type semiconductor and N type semiconductor.
Each comprises the aluminum or aluminum alloy with high-termal conductivity first heat exchanger 21 and second heat exchanger 26.Each fine finishining of surface (being contiguous to insulating barrier 27) of the surface of first heat exchanger 21 (being contiguous to insulating barrier 22) and second heat exchanger 26 goes out 5 μ m or littler surface roughness Ra.Insulating barrier 22 and 27 will be through comprising Al
2O
3, AlN, MgO or SiC filler spread to and have in close-burning polyimide resin layer or the epoxy resin layer and form.Alternatively, they can be formed on composite bed such on the heat-resisting aluminium lamination with polyimide resin layer that is scattered with filler or epoxy resin layer and form.Here, insulating barrier 22 and 27 forms through the embossing board-like material.Alternatively, board-like material is applied varnish, these board-like materials are cured so that form insulating barrier 22 and 27 subsequently.Each comprises copper film or tin-copper alloy film bottom electrode 23 and top electrode 25, and each formation has the regulation electrode patterns of 70 μ m to the specific thickness of 200 μ m.End (or opposite end along the longitudinal direction) to P type and N type semiconductor applies nickel plating.
Shown in Fig. 6 A, the bottom electrode 23 that comprises copper film or tin-copper alloy film and have a regulation electrode patterns shown in Fig. 7 A is linked to the insulating barrier 22 of first heat exchanger 21.Subsequently, comprise that the thermoelectric element 24 of P type and N type semiconductor alternately is arranged on the bottom electrode 23, shown in Fig. 6 B, wherein, the lower end of thermoelectric element 24 is attached on the bottom electrode 23 via brazing alloy (for example SnSb alloy, AuSn alloy and SnAgCu alloy).In addition, comprise that copper film or tin-copper alloy film and the top electrode 25 with the regulation electrode patterns shown in Fig. 7 B are arranged on the upper end of thermoelectric element 24.
After this, top electrode 25 is attached to the upper end of thermoelectric element 24 via brazing alloy (for example SnSb alloy, AuSn alloy and SnAgCu alloy).Thus, the thermoelectric element 24 that comprises P type and N type semiconductor is alternately arranged and is electrically connected in series between bottom electrode 23 and the top electrode 25.
At last, shown in Fig. 6 C, the insulating barrier 27 of second heat exchanger 26 contacts with top electrode 25; Then, top electrode 25 is attached to insulating barrier 27.This has accomplished the manufacturing of the heat exchange unit 20 of second embodiment.
(b) purposes of heat exchange unit 20
The heat exchange unit 20 of second embodiment can be used to control the temperature (being that temperature needs controlled main body, not shown) of define objective.For example, heated hot water is supplied to the inlet of the conduit 26a of " heat absorption " second heat exchanger 26 through absorbing heat from define objective, and the outlet of conduit 26a simultaneously is connected to define objective.In addition, cold water is supplied to the inlet of the conduit 21a of first heat exchanger 21, and the outlet of conduit 21a is as discharge outlet.In this state; Electric power is applied to electrothermal module M; Wherein thermoelectric element 24 is electrically connected in series between " heat radiation " bottom electrode 23 and " heat absorption " top electrode 25; So that top electrode 25 is cooled to absorb from the heat that receives the hot water that is supplied to define objective through " heat absorption " second heat exchanger 26, " heat radiation " bottom electrode 23 is heated simultaneously, so that its heat distributes via the cold water of the conduit 21a that flows through " heat radiation " first heat exchanger 21.
(c) measurement of maximum caloric receptivity Qmax
Use the heat exchange unit 20 of second embodiment, can measure maximum caloric receptivity (or heat absorptivity) Qmax that constitutes the Performance Evaluation benchmark through following process.Based on heat exchange unit 20 manufacturing test sample D1 to D3 and E1 to E2.As shown in Figure 8, vacuum chamber Y is used to heat exchange unit 20 (being specimen D1-D3, E1 and the E2 of heat exchange unit) is installed in wherein.Then, the hot-water line (not shown) is connected to the inlet of the conduit 26a of second heat exchanger 26, and the drainage pipe (not shown) is connected to the outlet of conduit 26a.
In addition, the cold water pipe (not shown) is connected to the inlet of the conduit 21a of first heat exchanger 21, and the drainage pipe (not shown) is connected to the outlet of conduit 21a.
Hereinbefore, heat exchange unit D1 is manufactured so that and comprises aluminium oxide (Al
2O
3) filler of powder is dispersed in the polyimide resin plate on the thick heat-resisting aluminium lamination of 5 μ m, forms the insulating barrier 22 and 27 with 30 μ m thickness thus.Heat exchange unit D2 is fabricated to the feasible aluminium oxide (Al that comprises
2O
3) filler of powder is dispersed in the epoxy resin board on the thick heat-resisting aluminium lamination of 5 μ m, forms the insulating barrier 22 and 27 with 20 μ m thickness thus.Heat exchange unit D3 is manufactured so that and comprises aluminium oxide (Al
2O
3) filler of powder is dispersed in the epoxy resin that scribbles varnish on the thick heat-resisting aluminium lamination of 5 μ m, forms the insulating barrier 22 and 27 with 20 μ m thickness thus.
In addition, heat exchange unit E1 is manufactured so that the filler that comprises magnesia (MgO) powder is dispersed in the epoxy resin board, forms the insulating barrier 22 and 27 with 20 μ m thickness thus.Heat exchange unit E2 is fabricated to and makes and to comprise that the filler of carborundum (SiC) powder is dispersed in the epoxy resin board, forms the insulating barrier 22 and 27 with 20 μ m thickness thus.
(d) measure withstand voltage WS
Based on heat exchange unit D1, D2 and D3 through change on first heat exchanger 21 and surfaces insulating barrier 22 adjacency and the lip-deep surface roughness Ra with insulating barrier 27 adjacency of second heat exchanger 26 make heat exchange unit D11 to D19, D21 to D29 and D31 to D39.Heat exchange unit D11-D19, D21-D29 and D31-D39 to having used different surface roughness Ra value measure withstand voltage WS.
Specifically; Change surface roughness Ra (on first heat exchanger 21 and surfaces insulating barrier 22 adjacency and on second heat exchanger 26 and surfaces insulating barrier 27 adjacency) to heat exchange unit D1; So that heat exchange unit D11 has the surface roughness of 0.3 μ m, heat exchange unit D12 has the surface roughness of 0.5 μ m, and heat exchange unit D13 has the surface roughness of 1.0 μ m; Heat exchange unit D14 has the surface roughness of 1.6 μ m; Heat exchange unit D15 has the surface roughness of 2.1 μ m, and heat exchange unit D16 has the surface roughness of 3.2 μ m, and heat exchange unit D17 has the surface roughness of 4.4 μ m; Heat exchange unit D18 has the surface roughness of 4.7 μ m, and heat exchange unit D19 has the surface roughness of 5.1 μ m.In addition, make the heat exchange unit D1a of surface roughness and heat exchange unit D1b, and measure withstand voltage WS with surface roughness of 0.1 μ m with 0.06 μ m based on heat exchange unit D1.The measured results show is in form 4-1, and wherein insulating barrier 22 (27) is that the thick polyimide plate of 30 μ m adds the heat-resisting aluminium lamination that 5 μ m are thick, and filler comprises aluminium oxide (Al
2O
3).
Form 4-1
Type | D1a | D1b | D11 | D12 | D13 | D14 | D15 | D16 | D17 | D18 | D19 |
Ra(μm) | 0.06 | 0.1 | 0.3 | 0.5 | 1.0 | 1.6 | 2.1 | 3.2 | 4.4 | 4.7 | 5.1 |
WS(kV) | 2.5 | 2.5 | 2.5 | 2.5 | 2.5 | 2.0 | 2.0 | 2.0 | 1.75 | 1.75 | 0.5 |
Qmax(W) | 189 | 218 | 218 | 218 | 218 | 218 | 218 | 218 | 218 | 218 | 218 |
In addition, change surface roughness Ra to heat exchange unit D2, so that heat exchange unit D21 has the surface roughness of 0.3 μ m; Heat exchange unit D22 has the surface roughness of 0.5 μ m; Heat exchange unit D23 has the surface roughness of 1.0 μ m, and heat exchange unit D24 has the surface roughness of 1.6 μ m, and heat exchange unit D25 has the surface roughness of 2.1 μ m; Heat exchange unit D26 has the surface roughness of 3.2 μ m; Heat exchange unit D27 has the surface roughness of 4.4 μ m, and heat exchange unit D28 has the surface roughness of 4.7 μ m, and heat exchange unit D29 has the surface roughness of 5.1 μ m.In addition, make the heat exchange unit D2b of the heat exchange unit D2a of surface roughness and surface roughness and measure withstand voltage WS based on heat exchange unit D2 with 0.1 μ m with 0.06 μ m.The measured results show is in form 4-2, and wherein insulating barrier 22 (27) is that the thick epoxy plate of 20 μ m adds the heat-resisting aluminium lamination that 5 μ m are thick, and filler comprises aluminium oxide (Al
2O
3).
Form 4-2
Type | D2a | D2b | D21 | D22 | D23 | D24 | D25 | D26 | D27 | D28 | D29 |
Ra(μm) | 0.06 | 0.1 | 0.3 | 0.5 | 1.0 | 1.6 | 2.1 | 3.2 | 4.4 | 4.7 | 5.1 |
WS(kV) | 2.5 | 2.5 | 2.5 | 2.5 | 2.5 | 2.5 | 2.0 | 2.0 | 1.75 | 1.75 | 0.5 |
Qmax(W) | 188 | 222 | 222 | 222 | 222 | 222 | 222 | 222 | 222 | 222 | 222 |
And then, change surface roughness Ra to heat exchange unit D3, so that heat exchange unit D31 has the surface roughness of 0.3 μ m; Heat exchange unit D32 has the surface roughness of 0.5 μ m; Heat exchange unit D33 has the surface roughness of 1.0 μ m, and heat exchange unit D34 has the surface roughness of 1.6 μ m, and heat exchange unit D35 has the surface roughness of 2.1 μ m; Heat exchange unit D36 has the surface roughness of 3.2 μ m; Heat exchange unit D37 has the surface roughness of 4.4 μ m, and heat exchange unit D38 has the surface roughness of 4.7 μ m, and heat exchange unit D39 has the surface roughness of 5.1 μ m.In addition, make the heat exchange unit D3b of the heat exchange unit D3a of surface roughness and surface roughness and measure withstand voltage WS based on heat exchange unit D3 with 0.1 μ m with 0.06 μ m.The measured results show is in form 4-3, and wherein insulating barrier 22 (27) is that the thick epoxy resin varnish of 20 μ m adds the heat-resisting aluminium lamination that 5 μ m are thick, and filler comprises aluminium oxide (Al
2O
3).
Form 4-3
Type | D3a | D3b | D31 | D32 | D33 | D34 | D35 | D36 | D37 | D38 | D39 |
Ra(μm) | 0.06 | 0.1 | 0.3 | 0.5 | 1.0 | 1.6 | 2.1 | 3.2 | 4.4 | 4.7 | 5.1 |
WS(kV) | 2.5 | 2.5 | 2.5 | 2.5 | 2.5 | 2.5 | 2.0 | 2.0 | 1.75 | 1.75 | 0.25 |
Qmax(W) | 192 | 220 | 220 | 220 | 220 | 220 | 220 | 220 | 220 | 220 | 220 |
About the measurement result among form 4-1,4-2 and the 4-3 of heat exchange unit D11-D19, D21-D29, D31-D39 is plotted on the curve chart of Fig. 9; On behalf of surface roughness Ra (μ m) and its vertical axes, its trunnion axis represent withstand voltage WS (kV), draws thus and measures curve (or dotted line) D1, D2 and D3.Above-mentioned measurement result shown in Figure 9 has clearly illustrated as long as then withstand voltage WS is just fine less than 4.7 μ m for surface roughness Ra to 4-3 with table 4-1, but withstand voltage descends fast when surface roughness Ra surpasses 4.7 μ m.Thus, preferably, the surface roughness Ra of heat exchanger 21 (26) is less than 4.7 μ m.
Similarly, E1 changes surface roughness Ra to heat exchange unit, so that heat exchange unit E11 has the surface roughness of 0.3 μ m; Heat exchange unit E12 has the surface roughness of 0.5 μ m; Heat exchange unit E13 has the surface roughness of 1.0 μ m, and heat exchange unit E14 has the surface roughness of 1.6 μ m, and heat exchange unit E15 has the surface roughness of 2.1 μ m; Heat exchange unit E16 has the surface roughness of 3.2 μ m; Heat exchange unit E17 has the surface roughness of 4.4 μ m, and heat exchange unit E18 has the surface roughness of 4.7 μ m, and heat exchange unit E19 has the surface roughness of 5.1 μ m.In addition, make the heat exchange unit E1a of surface roughness and heat exchange unit E1b, and measure withstand voltage WS with surface roughness of 0.1 μ m with 0.07 μ m based on heat exchange unit E1.The measured results show is in form 5-1, and wherein insulating barrier 22 (27) is the thick epoxy plates of 20 μ m, and filler comprises magnesia (MgO).
Form 5-1
Type | E1a | E1b | E11 | E12 | E13 | E14 | E15 | E16 | E17 | E18 | E19 |
Ra(μm) | 0.07 | 0.1 | 0.3 | 0.5 | 1.0 | 1.6 | 2.1 | 3.2 | 4.4 | 4.7 | 5.1 |
WS(kV) | 2.0 | 2.0 | 2.0 | 2.0 | 2.0 | 2.0 | 2.0 | 1.75 | 1.75 | 1.75 | 0.25 |
Qmax(W) | 192 | 225 | 225 | 225 | 225 | 225 | 225 | 225 | 225 | 225 | 225 |
In addition, change surface roughness Ra to heat exchange unit E2, so that heat exchange unit E21 has the surface roughness of 0.3 μ m; Heat exchange unit E22 has the surface roughness of 0.5 μ m; Heat exchange unit E23 has the surface roughness of 1.0 μ m, and heat exchange unit E24 has the surface roughness of 1.6 μ m, and heat exchange unit E25 has the surface roughness of 2.1 μ m; Heat exchange unit E26 has the surface roughness of 3.2 μ m; Heat exchange unit E27 has the surface roughness of 4.4 μ m, and heat exchange unit E28 has the surface roughness of 4.7 μ m, and heat exchange unit E29 has the surface roughness of 5.1 μ m.In addition, make the heat exchange unit E2b of the heat exchange unit E2a of surface roughness and surface roughness and measure withstand voltage WS based on heat exchange unit E2 with 0.1 μ m with 0.07 μ m.The measured results show is in form 5-2, and wherein insulating barrier 22 (27) is the thick epoxy plates of 20 μ m, and filler comprises carborundum (SiC).
Form 5-2
Type | ?E2a | E2b | E21 | E22 | E23 | E24 | E25 | E26 | E27 | E28 | E29 |
Ra(μm) | 0.07 | 0.1 | 0.3 | 0.5 | 1.0 | 1.6 | 2.1 | 3.2 | 4.4 | 4.7 | 5.1 |
WS(kV) | 2.0 | 2.0 | 2.0 | 2.0 | 2.0 | 2.0 | 2.0 | 1.75 | 1.75 | 1.75 | 0.25 |
Qmax(W) | 193 | 224 | 224 | 224 | 224 | 224 | 224 | 224 | 224 | 224 | 224 |
About form 5-1 and the measurement result among the 5-2 of heat exchange unit E11-E19, E21-E29 is plotted on the curve chart of Fig. 9, draws thus and measure curve (or dotted line) E1 and E2.Above-mentioned measurement result shown in Figure 9 has clearly illustrated as long as then withstand voltage WS is just fine less than 4.7 μ m for surface roughness Ra with table 5-1 and 5-2, but withstand voltage descends fast when surface roughness Ra surpasses 4.7 μ m.Thus, preferably, the surface roughness Ra of heat exchanger 21 (26) is less than 4.7 μ m.
3, the 3rd embodiment
The heat exchange unit 10 of first embodiment and the heat exchange unit 20 of second embodiment are designed so that electrode 13,15,23 and 25 is formed on the surface of heat exchanger 11,16,21 and 26 equably; But when the lip-deep regulation zone of heat exchanger does not allow electrode to arrange equably above that, can electrode be arranged to making the lip-deep regulation that can leave heat exchanger regional.Go out the third embodiment of the present invention based on this concept.
To 10C the heat exchange unit 30 according to third embodiment of the invention be described with reference to Figure 10 A.Shown in Figure 10 C, heat exchange unit 30 comprises first heat exchanger (as heat absorption or heat radiation water-cooled heat sink) 31, be formed on the surface of first heat exchanger 31 or insulating barrier 32a on the dorsal part and 32b, be formed on first bottom electrode (as heat radiation or heat absorption electrode) 33a on the insulating barrier 32a, be formed on first top electrode (as heat radiation or heat absorption electrode 33b) 33b on the insulating barrier 32b, be contiguous to the first bottom electrode 33a a plurality of first thermoelectric element 34a, be contiguous to the first top electrode 33b a plurality of second thermoelectric element 34b, be contiguous to the upper end of the first thermoelectric element 34a second top electrode (as heat radiation or heat absorption electrode) 35a, be contiguous to the lower end of the second thermoelectric element 34b second bottom electrode (as heat radiation or heat absorption electrode) 35b, second heat exchanger (as the heat radiation or the water-cooled low-temperature receiver that absorbs heat) 36, be formed on second heat exchanger 36 at the lip-deep insulating barrier above the second top electrode 35a 37, the 3rd heat exchanger (as heat radiation or heat absorption low-temperature receiver) 38 and be formed on the lip-deep insulating barrier 39 below the second bottom electrode 35b of the 3rd heat exchanger 38.The pair of terminal (all not shown) that is connected to pair of lead wires is formed on the end of the first bottom electrode 33a.
Shown in figure 12, the first electrothermal module M1 comprises the first thermoelectric element 34a, and these thermoelectric elements are via being electrically connected in series between the first bottom electrode 33a and the second top electrode 35a such as the such bond of scolder.In addition, the second electrothermal module M2 comprises the second thermoelectric element 34b, and these thermoelectric elements are via being electrically connected in series between the first top electrode 33b and the second bottom electrode 35b such as the such bond of scolder.
Each comprises the aluminum or aluminum alloy with high-termal conductivity with heat exchanger 31,36 and 38 (as water-cooled low-temperature receiver); Wherein, the surface (being contiguous to insulating barrier 39) of the surface (being contiguous to insulating barrier 37) of the surface of first heat exchanger 31 and dorsal part (being contiguous to insulating barrier 32a and 32b), second heat exchanger 36 and the 3rd heat exchanger 38 each by fine finishining 5 μ m or littler surface roughness Ra are arranged.In addition, a plurality of conduit 31a (to allow coolant---be water---flows through with the direction of regulation, from right to left promptly) are formed in first heat exchanger 31.Similarly, a plurality of conduit 36a are formed in second heat exchanger 36, and a plurality of conduit 38a is formed in the 3rd heat exchanger 38.Here, use instrument on the surface of the heat exchanger 31,36 that experiences molded (or casting) and 38, to form hole or recess.For this reason, form by-pass area 31c, 36c and 38c, to prevent on the surface of heat exchanger 31,36 and 38, forming electrode 33a, 33b, 35a and 35b, shown in Figure 11 A and 11B.In addition, a plurality of installing hole 31b, 36b and 38b are formed on the bight of heat exchanger 31,36 and 38.
Insulating barrier 32a, 32b, 37 and 39 each comprise having polyimide resin, epoxy resin or the alumite of 10 μ m to 100 μ m thickness.Preferably will include aluminium oxide (Al
2O
3), aluminium nitride (AlN), magnesia (MgO) or carborundum (SiC) and filler that have 15 μ m or littler average grain diameter spread among the insulating barrier 32a that includes polyimide resin or epoxy resin, the 32b, 37 and 39, improves thermal conductivity thus.Polyimide resin or the epoxy resin that in addition, preferably will be scattered with filler is layered on the insulating barrier 32a that comprises alumite, the 32b, 37 and 39.
Each comprises having copper film or the tin-copper alloy film of 70 μ m to 200 μ m thickness electrode 33a, 33b, 35a and 35b.Each has the pattern of arranging shown in Figure 11 A the first bottom electrode 33a and the first top electrode 33b, and the second top electrode 35a and the second bottom electrode 35b each have the pattern of arranging shown in Figure 11 B.Each section of electrode 33a, 33b, 35a and 35b forms rectangle and has the minor face of the long length of side and 1.8mm of 3mm long.In addition, the minimum range t between the adjacent segment is less than the minor face long (for example 1.8mm) of each rectangular section.
Comprise that the mode that the first thermoelectric element 34a of P type semiconductor and N type semiconductor alternately arranges with P type semiconductor and N type semiconductor is electrically connected in series between the first bottom electrode 33a and the second top electrode 35a.Similarly, comprise that the mode that the second thermoelectric element 34b of P type semiconductor and N type semiconductor alternately arranges with P type semiconductor and N type semiconductor is electrically connected in series between the first top electrode 33b and the second bottom electrode 35b. Thermoelectric element 34a and 34b via SnSb alloy, AuSn alloy or SnAgCu alloy brazed to electrode 33a, 33b, 35a and 35b.The terminal nickel plating of thermoelectric element 34a and 34b is so that thermoelectric element 34a and 34b can easily be soldered to electrode 33a, 33b, 35a and 35b.
Preferably, thermoelectric element 34a and 34b comprise the sintering thermoelectric material Bi-Te that at room temperature has high thermoelectricity capability.Specifically, preferably use P type semiconductor that comprises the Bi-Sb-Te ternary compound and the N type semiconductor that comprises the Bi-Sb-Te-Se quaternary compound.In the present embodiment, P type semiconductor comprises Bi
0.5Sb
1.5Te
3, and N type semiconductor comprises Bi
1.9Sb
0.1Te
2.6Se
0.4, wherein these semiconductor experience liquid hardenings so that produce the paper tinsel sprills, make this paper tinsel sprills experience hot pressing so that form block then, and this block is cut into some sheets subsequently, and each sheet has the given size that 1.35mm is long, 1.35mm is wide and 1.5mm is high.
(a) manufacturing of heat exchange unit 30
At first; Prepare first heat exchanger 31 (as the water-cooled low-temperature receiver of heat absorption); So that have close-burning insulating barrier 32a and 32b is formed on the surface and dorsal part of this first heat exchanger, and a plurality of conduit 31a is formed on the inside of this first heat exchanger, flows through to allow coolant (being water).Prepare second heat exchanger 36 (as heat radiation water-cooled heat sink); Be formed on the surface of this second heat exchanger so that have close-burning insulating barrier 37; And a plurality of conduit 36a are formed on the inside of this second heat exchanger, flow through to allow coolant (being water).Prepare the 3rd heat exchanger 38 (as heat radiation water-cooled heat sink); Be formed on the surface of the 3rd heat exchanger so that have close-burning insulating barrier 39; And a plurality of conduit 38a are formed on the inside of the 3rd heat exchanger, flow through to allow coolant (being water).In addition, prepare the first bottom electrode 33a, the first top electrode 33b, the second top electrode 35a and the second bottom electrode 35b in advance.And then preparation in advance comprises the thermoelectric element 34a and the 34b of P type semiconductor and N type semiconductor.
Heat exchanger 31,36 and 38 each comprise aluminum or aluminum alloy with high-termal conductivity.The surface (being contiguous to insulating barrier 37) of the surface of first heat exchanger 31 and dorsal part (being contiguous to insulating barrier 32a and 32b), second heat exchanger 36 and each fine finishining of surface (being contiguous to insulating barrier 39) of the 3rd heat exchanger 38 go out 5 μ m or littler surface roughness Ra.Insulating barrier 32a, 32b, 37 and 39 will be through comprising Al
2O
3, AlN, MgO or SiC filler spread to and have in close-burning polyimide resin layer or the epoxy resin layer and form.Alternatively, they can be formed on composite bed such on the heat-resisting aluminium lamination with polyimide resin layer that is scattered with filler or epoxy resin layer and form.Here, insulating barrier 32a, 32b, 37 and 39 form through the embossing board-like material.Alternatively, board-like material is applied varnish, these board-like materials are cured so that form insulating barrier 32a, 32b, 37 and 39 subsequently.Each comprises copper film or tin-copper alloy film electrode 33a, 33b, 35a and 35b, and each formation has the regulation electrode patterns of 70 μ m to the specific thickness of 200 μ m.End (or opposite end along the longitudinal direction) to P type and N type semiconductor applies nickel plating.
Shown in Figure 10 A, the first bottom electrode 33a that comprises copper film or tin-copper alloy film and have a regulation electrode patterns shown in Figure 11 A is linked to the insulating barrier 32a of first heat exchanger 31.The first top electrode 33b that comprises copper film or tin-copper alloy film and have a regulation electrode patterns shown in Figure 11 A is linked to the insulating barrier 32b of first heat exchanger 31.Subsequently; The thermoelectric element 34a that comprises P type and N type semiconductor alternately is arranged on the first bottom electrode 33a; Shown in Figure 10 B, wherein, the lower end of thermoelectric element 34a is attached on the first bottom electrode 33a via brazing alloy (for example SnSb alloy, AuSn alloy and SnAgCu alloy).Comprise that the second thermoelectric element 34b of P type and N type semiconductor alternately is arranged in the below of the first top electrode 33b, wherein, the upper end of thermoelectric element 34b is attached to the first top electrode 33b via brazing alloy (for example SnSb alloy, AuSn alloy and SnAgCu alloy).The second top electrode 35a that comprises copper film or tin-copper alloy film and have a regulation electrode patterns (seeing Figure 11 B) is arranged on the upper end of the first thermoelectric element 34a, and the second bottom electrode 35b that comprises copper film or tin-copper alloy film and have a regulation electrode patterns (seeing Figure 11 B) is arranged on the below, lower end of the second thermoelectric element 34b.
After this, the second top electrode 35a is attached to the upper end of the first thermoelectric element 34a, and the second bottom electrode 35b is attached to the lower end of the second thermoelectric element 34b via brazing alloy (for example SnSb alloy, AuSn alloy and SnAgCu alloy).Thus; The first thermoelectric element 34a that comprises P type and N type semiconductor alternately is arranged in and is electrically connected in series between the first bottom electrode 33a and the second top electrode 35a, and comprises that the second thermoelectric element 34b of P type and N type semiconductor alternately is arranged in and is electrically connected in series between the first top electrode 33b and the second bottom electrode 35b.
At last, shown in Figure 10 C, the insulating barrier 37 of second heat exchanger 36 contacts with the second top electrode 35a, and the insulating barrier 39 of the 3rd heat exchanger 38 contacts with the second bottom electrode 35b; Then, the second top electrode 35a is attached to insulating barrier 37, and the second bottom electrode 35b is attached to insulating barrier 39.This has accomplished the manufacturing of the heat exchange unit 30 of the 3rd embodiment.
(b) purposes of heat exchange unit 30
The heat exchange unit 30 of the 3rd embodiment can be used to control the temperature (being that temperature needs controlled main body, not shown) of define objective.For example, heated hot water is supplied to the inlet of the conduit 31a of " heat absorption " first heat exchanger 31 through absorbing heat from define objective, and the outlet of conduit 31a simultaneously is connected to define objective.In addition, cold water is supplied to the inlet of conduit 38a of inlet and the 3rd heat exchanger 38 of the conduit 36a of second heat exchanger 36, and the outlet of conduit 36a and 38a is as discharge outlet.
Under above-mentioned state; Electric power is applied to the first electrothermal module M1; Wherein the first thermoelectric element 34a is electrically connected in series between " heat radiation " second top electrode 35a and " heat absorption " first bottom electrode 33a; So that the heat that the first bottom electrode 33a is cooled and absorbs from the hot water that is supplied to define objective with through " heat absorption " first heat exchanger 31, the second top electrode 35a is heated simultaneously, so that its heat distributes via the cold water of the conduit 36a that flows through second heat exchanger 36.
Electric power is applied to the second electrothermal module M2; Wherein the second thermoelectric element 34b is electrically connected in series between " heat radiation " second bottom electrode 35b and " heat absorption " first top electrode 33b; So that the heat that the first top electrode 33b is cooled and absorbs from the hot water that is supplied to define objective with through first heat exchanger 31; The second bottom electrode 35b is heated simultaneously, so that its heat distributes via the cold water of the conduit 38a that flows through the 3rd heat exchanger 38.
(c) measurement of maximum caloric receptivity Qmax
Use the heat exchange unit 30 of the 3rd embodiment, can measure maximum caloric receptivity (or heat absorptivity) Qmax that constitutes the Performance Evaluation benchmark through following process.Based on heat exchange unit 30 manufacturing test sample F 1, F2 and G1 to G4.Shown in figure 12, vacuum chamber Z is used to install therein heat exchange unit 30 (being specimen F1 and the F2 and the G1-G4 of heat exchange unit).
The hot-water line (not shown) is attached to the inlet of the conduit 31a of first heat exchanger 31, and the drainage pipe (not shown) is connected to the outlet of conduit 31a.The cold water pipe (not shown) is connected to the inlet of the conduit 36a of second heat exchanger 36, and the drainage pipe (not shown) is connected to the outlet of conduit 36a.Cold water pipe is connected to the inlet of the conduit 38a of the 3rd heat exchanger 38, and drainage pipe is connected to the outlet of conduit 38a.
Hereinbefore, heat exchange unit F1 is manufactured so that and comprises aluminium oxide (Al
2O
3) filler of powder is dispersed in the polyimide resin plate, forms insulating barrier 32a, the 32b, 37 and 39 with 15 μ m thickness thus.Heat exchange unit F2 is fabricated to and makes and to comprise that the filler of alumina powder is dispersed in the polyimide resin that scribbles varnish, forms insulating barrier 32a, the 32b, 37 and 39 with 20 μ m thickness thus.
Heat exchange unit G1 is manufactured so that and comprises aluminium oxide (Al
2O
3) and the filler of aluminium nitride (AlN) powder be dispersed in the epoxy resin board on the thick heat-resisting aluminium lamination of 10 μ m, form insulating barrier 32a, 32b, 37 and 39 thus with 20 μ m thickness.Heat exchange unit G2 is fabricated to the feasible aluminium oxide (Al that comprises
2O
3) and the filler of aluminium nitride (AlN) powder be dispersed in scribbling in the varnish epoxy resin on the thick heat-resisting aluminium lamination of 10 μ m, form insulating barrier 32a, 32b, 37 and 39 thus with 20 μ m thickness.Heat exchange unit G3 is fabricated to the feasible aluminium oxide (Al that comprises
2O
3) filler of powder and magnesia (MgO) powder is dispersed in the epoxy resin board on the thick heat-resisting aluminium lamination of 10 μ m, forms insulating barrier 32a, the 32b, 37 and 39 with 20 μ m thickness thus.Heat exchange unit G4 is fabricated to the feasible aluminium oxide (Al that comprises
2O
3) and the filler of carborundum (SiC) powder be dispersed in scribbling in the varnish epoxy resin on the thick heat-resisting aluminium lamination of 10 μ m, form insulating barrier 32a, 32b, 37 and 39 thus with 20 μ m thickness.
(d) measure withstand voltage WS
Based on heat exchange unit F1 and F2 through change the lip-deep surface roughness Ra with the lip-deep of insulating barrier 37 adjacency and the 3rd heat exchanger 38 on first heat exchanger 31 and surface insulating barrier 32a and 32b adjacency and the dorsal part, second heat exchanger 36 with insulating barrier 39 adjacency make heat exchange unit F11 to F19 and F21 to F29.Heat exchange unit F11-F19 and F21-F29 to having used different surface roughness Ra value measure withstand voltage WS.
Specifically; To heat exchange unit F1 change surface roughness Ra (first heat exchanger 31 and surfaces insulating barrier 32 adjacency and dorsal part, on second heat exchanger 36 and surfaces insulating barrier 37 adjacency and the 3rd heat exchanger 38 and surfaces insulating barrier 39 adjacency); So that heat exchange unit F11 has the surface roughness of 0.3 μ m, heat exchange unit F12 has the surface roughness of 0.5 μ m, and heat exchange unit F13 has the surface roughness of 1.0 μ m; Heat exchange unit F14 has the surface roughness of 1.6 μ m; Heat exchange unit F15 has the surface roughness of 2.2 μ m, and heat exchange unit F16 has the surface roughness of 3.2 μ m, and heat exchange unit F17 has the surface roughness of 4.4 μ m; Heat exchange unit F18 has the surface roughness of 4.7 μ m, and heat exchange unit F19 has the surface roughness of 5.1 μ m.In addition, make the heat exchange unit F1a of surface roughness and heat exchange unit F1b, and measure withstand voltage WS with surface roughness of 0.1 μ m with 0.08 μ m based on heat exchange unit F1.The measured results show in form 6-1, wherein insulating barrier 32a, 32b, 37 and 39 each comprise the thick polyimide plate of 15 μ m, and filler comprises aluminium oxide (Al
2O
3).
Form 6-1
Type | F1a | F1b | F11 | F12 | F13 | F14 | F15 | F16 | F17 | F18 | F19 |
Ra(μm) | 0.08 | 0.1 | 0.3 | 0.5 | 1.0 | 1.6 | 2.2 | 3.2 | 4.4 | 4.7 | 5.1 |
WS(kV) | 2.0 | 2.0 | 2.0 | 2.0 | 1.75 | 1.75 | 1.75 | 1.75 | 1.75 | 1.75 | 0.25 |
Qmax(W) | 396 | 435 | 435 | 435 | 435 | 435 | 435 | 435 | 435 | 435 | 435 |
In addition, change surface roughness Ra to heat exchange unit F2, so that heat exchange unit F21 has the surface roughness of 0.3 μ m; Heat exchange unit F22 has the surface roughness of 0.5 μ m; Heat exchange unit F23 has the surface roughness of 1.0 μ m, and heat exchange unit F24 has the surface roughness of 1.6 μ m, and heat exchange unit F25 has the surface roughness of 2.2 μ m; Heat exchange unit F26 has the surface roughness of 3.2 μ m; Heat exchange unit F27 has the surface roughness of 4.4 μ m, and heat exchange unit F28 has the surface roughness of 4.7 μ m, and heat exchange unit F29 has the surface roughness of 5.1 μ m.In addition, make the heat exchange unit F2b of the heat exchange unit F2a of surface roughness and surface roughness and measure withstand voltage WS based on heat exchange unit F2 with 0.1 μ m with 0.08 μ m.The measured results show in form 6-2, wherein insulating barrier 32a, 32b, 37 and 39 each comprise the thick polyimide varnish of 20 μ m (polyimide varnish), and filler comprises aluminium oxide (Al
2O
3).
Form 6-2
Type | F2a | F2b | F21 | F22 | F23 | F24 | F25 | F26 | F27 | F28 | F29 |
Ra(μm) | 0.08 | 0.1 | 0.3 | 0.5 | 1.0 | 1.6 | 2.2 | 3.2 | 4.4 | 4.7 | 5.1 |
WS(kV) | 2.0 | 2.0 | 2.0 | 2.0 | 2.0 | 2.0 | 1.75 | 1.75 | 1.75 | 1.75 | 0.25 |
Qmax(W) | 399 | 440 | 440 | 440 | 440 | 440 | 440 | 440 | 440 | 440 | 440 |
About form 6-1 and the measurement result among the 6-2 of heat exchange unit F11-F19 and F21-F29 is plotted on the curve chart of Figure 13; On behalf of surface roughness Ra (μ m) and its vertical axes, its trunnion axis represent withstand voltage WS (kV), draws thus and measures curve (or dotted line) F1 and F2.Above-mentioned measurement result shown in Figure 13 has clearly illustrated as long as then withstand voltage WS is just fine less than 4.7 μ m for surface roughness Ra with table 6-1 and 6-2, but withstand voltage descends fast when surface roughness Ra surpasses 4.7 μ m.Thus, preferably, heat exchanger 31,36 and 38 surface roughness Ra are less than 4.7 μ m.
Similarly, based on heat exchange unit G1, G2, G3 and G4 through change the lip-deep surface roughness Ra with the lip-deep of insulating barrier 37 adjacency and the 3rd heat exchanger 38 on first heat exchanger 31 and surface insulating barrier 32a and 32b adjacency and the dorsal part, second heat exchanger 36 with insulating barrier 39 adjacency make heat exchange unit G11 to G19, G21 to G29, G31 to G39 and G41 to G49.Heat exchange unit G11-G19, G21-G29, G31-G39 and G41-G49 to having used different surface roughness Ra value measure withstand voltage WS.
Specifically; Change surface roughness Ra (on first heat exchanger 31 and the surface and dorsal part insulating barrier 32a and 32b adjacency) to heat exchange unit G1 on second heat exchanger 36 and surfaces insulating barrier 37 adjacency and on the 3rd heat exchanger 38 and surfaces insulating barrier 39 adjacency; So that heat exchange unit G11 has the surface roughness of 0.3 μ m; Heat exchange unit G12 has the surface roughness of 0.5 μ m; Heat exchange unit G13 has the surface roughness of 1.0 μ m, and heat exchange unit G14 has the surface roughness of 1.6 μ m, and heat exchange unit G15 has the surface roughness of 2.1 μ m; Heat exchange unit G16 has the surface roughness of 3.2 μ m; Heat exchange unit G17 has the surface roughness of 4.4 μ m, and heat exchange unit G18 has the surface roughness of 4.7 μ m, and heat exchange unit G19 has the surface roughness of 5.1 μ m.In addition, make the heat exchange unit G1a of surface roughness and heat exchange unit G1b, and measure withstand voltage WS with surface roughness of 0.1 μ m with 0.07 μ m based on heat exchange unit G1.The measured results show is in form 7-1, and wherein insulating barrier 32a, 32b, 37 and 39 are that the thick epoxy plate of 20 μ m adds the heat-resisting aluminium lamination that 10 μ m are thick, and filler comprises aluminium oxide (Al
2O
3) add aluminium nitride (AlN).
Form 7-1
Type | G1a | G1b | G11 | G12 | G13 | G14 | G15 | G16 | G17 | G18 | G19 |
Ra(μm) | 0.07 | 0.1 | 0.3 | 0.5 | 1.0 | 1.6 | 2.1 | 3.2 | 4.4 | 4.7 | 5.1 |
WS(kV) | 2.5 | 2.5 | 2.5 | 2.5 | 2.5 | 2.0 | 2.0 | 1.75 | 1.75 | 1.75 | 0.5 |
Qmax(W) | 398 | 432 | 432 | 432 | 432 | 432 | 432 | 432 | 432 | 432 | 432 |
In addition, change surface roughness Ra to heat exchange unit G2, so that heat exchange unit G21 has the surface roughness of 0.3 μ m; Heat exchange unit G22 has the surface roughness of 0.5 μ m; Heat exchange unit G23 has the surface roughness of 1.0 μ m, and heat exchange unit G24 has the surface roughness of 1.6 μ m, and heat exchange unit G25 has the surface roughness of 2.1 μ m; Heat exchange unit G26 has the surface roughness of 3.2 μ m; Heat exchange unit G27 has the surface roughness of 4.4 μ m, and heat exchange unit G28 has the surface roughness of 4.7 μ m, and heat exchange unit G29 has the surface roughness of 5.1 μ m.In addition, make the heat exchange unit G2a of surface roughness and heat exchange unit G2b, and measure withstand voltage WS with surface roughness of 0.1 μ m with 0.07 μ m based on heat exchange unit G2.The measured results show is in form 7-2, and wherein insulating barrier 32a, 32b, 37 and 39 are that the thick epoxy resin varnish of 20 μ m adds the heat-resisting aluminium lamination that 10 μ m are thick, and filler comprises aluminium oxide (Al
2O
3) add aluminium nitride (AlN).
Form 7-2
Type | G2a | G2b | G21 | G22 | G23 | G24 | G25 | G26 | G27 | G28 | G29 |
Ra(μm) | 0.07 | 0.1 | 0.3 | 0.5 | 1.0 | 1.6 | 2.1 | 3.2 | 4.4 | 4.7 | 5.1 |
WS(kV) | 2.5 | 2.5 | 2.5 | 2.5 | 2.5 | 2.0 | 2.0 | 1.75 | 1.75 | 1.75 | 0.5 |
Qmax(W) | 403 | 434 | 434 | 434 | 434 | 434 | 434 | 434 | 434 | 434 | 434 |
Change surface roughness Ra to heat exchange unit G3; So that heat exchange unit G31 has the surface roughness of 0.3 μ m, heat exchange unit G32 has the surface roughness of 0.5 μ m, and heat exchange unit G33 has the surface roughness of 1.0 μ m; Heat exchange unit G34 has the surface roughness of 1.6 μ m; Heat exchange unit G35 has the surface roughness of 2.1 μ m, and heat exchange unit G36 has the surface roughness of 3.2 μ m, and heat exchange unit G37 has the surface roughness of 4.4 μ m; Heat exchange unit G38 has the surface roughness of 4.7 μ m, and heat exchange unit G39 has the surface roughness of 5.1 μ m.In addition, make the heat exchange unit G3a of surface roughness and heat exchange unit G3b, and measure withstand voltage WS with surface roughness of 0.1 μ m with 0.07 μ m based on heat exchange unit G3.The measured results show is in form 7-3, and wherein insulating barrier 32a, 32b, 37 and 39 are that the thick epoxy plate of 20 μ m adds the heat-resisting aluminium lamination that 10 μ m are thick, and filler comprises aluminium oxide (Al
2O
3) add magnesia (MgO).
Form 7-3
Type | G3a | G3b | G31 | G32 | G33 | G34 | G35 | G36 | G37 | G38 | G39 |
Ra(μm) | 0.07 | 0.1 | 0.3 | 0.5 | 1.0 | 1.6 | 2.1 | 3.2 | 4.4 | 4.7 | 5.1 |
WS(kV) | 2.5 | 2.5 | 2.5 | 2.5 | 2.5 | 2.0 | 2.0 | 1.75 | 1.75 | 1.75 | 0.25 |
Qmax(W) | 409 | 430 | 430 | 430 | 430 | 430 | 430 | 430 | 430 | 430 | 430 |
Change surface roughness Ra to heat exchange unit G4; So that heat exchange unit G41 has the surface roughness of 0.3 μ m, heat exchange unit G42 has the surface roughness of 0.5 μ m, and heat exchange unit G43 has the surface roughness of 1.0 μ m; Heat exchange unit G44 has the surface roughness of 1.6 μ m; Heat exchange unit G45 has the surface roughness of 2.1 μ m, and heat exchange unit G46 has the surface roughness of 3.2 μ m, and heat exchange unit G47 has the surface roughness of 4.4 μ m; Heat exchange unit G48 has the surface roughness of 4.7 μ m, and heat exchange unit G49 has the surface roughness of 5.1 μ m.In addition, make the heat exchange unit G4a of surface roughness and heat exchange unit G4b, and measure withstand voltage WS with surface roughness of 0.1 μ m with 0.07 μ m based on heat exchange unit G4.The measured results show is in form 7-4, and wherein insulating barrier 32a, 32b, 37 and 39 are that the thick epoxy resin varnish of 20 μ m adds 10 μ m alumites, and filler comprises aluminium oxide (Al
2O
3) carborundum (SiC).
Form 7-4
Type | G4a | G4b | G41 | G42 | G43 | G44 | G45 | G46 | G47 | G48 | G49 |
Ra(μm) | 0.07 | 0.1 | 0.3 | 0.5 | 1.0 | 1.6 | 2.1 | 3.2 | 4.4 | 4.7 | 5.1 |
WS(kV) | 2.5 | 2.5 | 2.5 | 2.5 | 2.5 | 2.0 | 2.0 | 1.75 | 1.75 | 1.75 | 0.5 |
Qmax(W) | 401 | 430 | 430 | 430 | 430 | 430 | 430 | 430 | 430 | 430 | 430 |
About the form 7-1 of heat exchange unit G11-G19, G21-G29, G31-G39 and G41-G49 is plotted in to the measurement result among the 7-4 on the curve chart of Figure 13, draws thus and measure curve (or dotted line) G1, G2, G3 and G4.Above-mentioned measurement result shown in Figure 13 has clearly illustrated as long as then withstand voltage WS is just fine less than 4.7 μ m for surface roughness Ra to 7-4 with table 7-1, but withstand voltage descends fast when surface roughness Ra surpasses 4.7 μ m.Thus, preferably, heat exchanger 31,36 and 38 surface roughness Ra are less than 4.7 μ m.
Extra measurement result according to heat exchange unit A1a-A3a, A1b-A3b, C1a-C3a, C1b-C3b, D1a-D3a, D1b-D3b, E1a-E2a, E1b-E2b, F1a-F2a, F1b-F2b, Gla-G4a and G1b-G4b; Maximum caloric receptivity Qmax significantly descends, thereby when surface roughness Ra becomes less than 0.1 μ m, reduces heat absorption/heat dispersion.This be because; When surface roughness Ra becomes less than 0.1 μ m; But the surface shiny effect of heat exchanger; This has reduced the interface zone (interface area) between the surface that is formed on insulating barrier and heat exchanger, thereby increases the thermal resistance at interface zone place, and this has reduced heat exchanger effectiveness again.Thus, preferably, the surface roughness Ra at the interface place between insulating barrier and heat exchanger is greater than 0.1 μ m.
4, industrial applicability
The foregoing description uses such as polyimide resin and the such synthetic resin material manufacture of epoxy resin.Certainly, can use other materials, such as aromatic polyamide resin (aramid resin) and BT (bismaleimide traiazine) resin, it also has aforementioned effect.
The foregoing description uses such as the such filler structure of alumina powder, aluminum nitride powder, magnesia powder and carborundum powder; But this is not restriction; Therefore, can use such as carbon dust, carborundum powder, the such packing material of silicon nitride powder with high-termal conductivity.Single filler material can satisfy the foregoing description, but can use the combination of two or more filler materials.In addition, filler can form with Any shape, like spherical and bar-shaped combination with them.
At last, the present invention needn't be limited to the foregoing description, and these embodiment can be in every way by further modification in the scope of the present invention that accompanying claims limits.
The present invention requires the priority of the open No.2009-18498 of Japan Patent, and the content of this application is herein incorporated by reference.
Claims (11)
1. heat exchange unit comprises:
Top electrode;
Bottom electrode;
A plurality of thermoelectric elements are plugged between top electrode and the bottom electrode; With
Heat exchanger, it is attached to top electrode or bottom electrode via insulating barrier,
Wherein, heat exchanger comprises the metal with high-termal conductivity, and with the surface roughness of the heat exchanger of insulating barrier adjacency less than 4.7 μ m, said insulating barrier has the thickness of 10 μ m to 100 μ m.
2. heat exchange unit as claimed in claim 1, wherein, heat exchanger comprises aluminum or aluminum alloy.
3. heat exchange unit as claimed in claim 1, wherein, insulating barrier comprises the insulating resin layer with high-termal conductivity.
4. heat exchange unit as claimed in claim 1, wherein, insulating barrier is a kind of composite bed, has the insulating resin layer that is layered in the high-termal conductivity on the heat-resisting aluminium lamination in this composite bed.
5. heat exchange unit as claimed in claim 1, wherein, insulating barrier comprises polyimide resin or epoxy resin.
6. heat exchange unit as claimed in claim 1, wherein, insulating barrier comprises polyimide resin that scribbles varnish or the epoxy resin that scribbles varnish.
7. heat exchange unit as claimed in claim 1, wherein, insulating barrier comprises the insulating resin that is scattered with filler, this filler has high-termal conductivity.
8. heat exchange unit as claimed in claim 1, wherein, insulating barrier comprises the insulating resin that scribbles varnish that is scattered with filler, this filler has high-termal conductivity.
9. heat exchange unit as claimed in claim 7, wherein, filler comprises alumina powder, aluminum nitride powder, magnesia powder or carborundum powder.
10. heat exchange unit as claimed in claim 8, wherein, filler comprises alumina powder, aluminum nitride powder, magnesia powder or carborundum powder.
11. heat exchange unit as claimed in claim 1, wherein, with the surface roughness of the heat exchanger of insulating barrier adjacency greater than 0.1 μ m.
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JP018498/09 | 2009-01-29 | ||
JP2009018498 | 2009-01-29 |
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US (1) | US20100186424A1 (en) |
JP (1) | JP5593712B2 (en) |
KR (1) | KR101195674B1 (en) |
CN (1) | CN101794766B (en) |
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US20090236087A1 (en) * | 2008-03-19 | 2009-09-24 | Yamaha Corporation | Heat exchange device |
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KR20140044523A (en) * | 2012-10-05 | 2014-04-15 | 한국전자통신연구원 | A private electric generator |
JP6266206B2 (en) * | 2012-12-05 | 2018-01-24 | 株式会社Kelk | Thermoelectric module |
CN103022338B (en) * | 2012-12-26 | 2017-05-03 | 中国电子科技集团公司第十八研究所 | Manufacturing method of cascade temperature-difference power generating device |
JP6297025B2 (en) * | 2013-03-21 | 2018-03-20 | 国立大学法人長岡技術科学大学 | Thermoelectric conversion element |
DE102014212490A1 (en) * | 2014-06-27 | 2016-01-14 | Mahle International Gmbh | Peltier element and method of manufacture |
DE102016202435A1 (en) * | 2016-02-17 | 2017-08-17 | Mahle International Gmbh | Heat exchanger |
KR102434260B1 (en) | 2018-06-26 | 2022-08-19 | 엘지이노텍 주식회사 | Thermoelectric element |
JP7236846B2 (en) * | 2018-11-15 | 2023-03-10 | 株式会社Kelk | TEMPERATURE CONTROLLER AND METHOD FOR MANUFACTURING TEMPERATURE CONTROLLER |
US11844278B2 (en) | 2019-01-23 | 2023-12-12 | Lg Innotek Co., Ltd. | Thermoelectric element |
KR102609889B1 (en) * | 2019-01-23 | 2023-12-05 | 엘지이노텍 주식회사 | Thermoelectric element |
KR102678894B1 (en) * | 2019-01-23 | 2024-06-27 | 엘지이노텍 주식회사 | Thermoelectric element |
KR20200098391A (en) * | 2019-02-12 | 2020-08-20 | 엘지이노텍 주식회사 | Thermoelectric module |
US11980098B2 (en) | 2019-02-12 | 2024-05-07 | Lg Innotek Co., Ltd. | Thermoelectric module |
US11723275B2 (en) | 2019-02-12 | 2023-08-08 | Lg Innotek Co., Ltd. | Thermoelectric module |
CN112670255A (en) * | 2020-12-24 | 2021-04-16 | 上海先方半导体有限公司 | Self-driven micro-channel heat dissipation system and manufacturing method thereof |
CN116314106B (en) * | 2023-02-10 | 2023-11-07 | 东台施迈尔新材料科技有限公司 | Alumina ceramic substrate for chip packaging |
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JP2010199571A (en) | 2010-09-09 |
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CN101794766A (en) | 2010-08-04 |
US20100186424A1 (en) | 2010-07-29 |
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TWI419385B (en) | 2013-12-11 |
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