TWI418798B - A semiconductor inspection device and alignment method with alignment function - Google Patents

Description

Semiconductor inspection device with alignment function and alignment method

The present invention relates to a semiconductor inspection apparatus and an alignment method having an alignment function, and more specifically relates to a semiconductor inspection apparatus for inspecting electrical characteristics of a semiconductor wafer such as a liquid crystal drive driver mounted on a substrate such as a TAB tape. A semiconductor inspection apparatus for aligning a test pad with a test probe and an alignment method thereof, and a substrate and a probe card for mounting a semiconductor wafer used in such a semiconductor inspection apparatus or alignment method.

In a semiconductor inspection apparatus that inspects the electrical characteristics of a semiconductor wafer mounted on a substrate such as a semiconductor substrate or a TAB tape, it is necessary to align the electrode pad of the semiconductor wafer or the test pad with the test probe, and this alignment is conventional. There are various ways to be proposed.

For example, Patent Literatures 1 and 2 disclose an alignment method in which a mark for alignment is formed on a TAB tape on which a semiconductor wafer is mounted, and the image is taken by a camera or the like to perform image analysis, thereby calculating the image. The offset of the reference position is performed to align the test pad of the semiconductor wafer with the test probe. However, in such an optical alignment method, it is necessary to take a camera or a portrait analysis device, which is not only large in size but also ensures the optical positional relationship between the mark and the camera in a limited space of the inspection device. This allows the camera to capture the mark for alignment.

Further, in Patent Documents 3 and 4, it is proposed to form a positioning contact or a dummy pad on a substrate or a TAB tape on which a semiconductor wafer is mounted, and to make a plurality of alignment probes and the like. Or contact with the virtual pad to investigate whether there is electrical continuity, thereby enabling information on the offset from the reference position. However, in the case of the electrical alignment method proposed in the past, it is possible to obtain information on which direction shift from the reference position, but it is impossible to obtain quantitative information on how to offset, and it is necessary to complete the alignment. Repeat the trial error multiple times.

[Advanced technical literature] [Patent Literature]

[Patent Document 1] New Registration No. 2556386

[Patent Document 2] JP-A-2008-116221

[Patent Document 3] JP-A-53-45181

[Patent Document 4] Patent No. 3214420

The present invention has been made to solve the above problems of the prior art, and an object of the present invention is to provide a semiconductor inspection apparatus and alignment having an alignment function capable of obtaining quantitative information on positional deviation without requiring a camera or the like. A method and a substrate and a probe card for mounting a semiconductor wafer used in such a semiconductor inspection apparatus or alignment method.

The present invention is solved by providing a semiconductor inspection apparatus having an alignment function for electrically contacting a front end of a test probe with an electrode pad or a test pad of a semiconductor wafer. A semiconductor inspection apparatus for inspecting electrical characteristics of a semiconductor wafer, comprising: means for feeding a substrate on which a semiconductor wafer to be inspected is mounted to an inspection position; and a general probe and a plurality of dummy probes for feeding to a substrate at an inspection position Relatively moving, and contacting or disconnecting the common terminal for alignment formed on the substrate and one or a plurality of dummy terminals electrically connected to the common terminal; investigating the general probe and the virtual probe Means of electrical conduction; means of correspondence between the combination of a universal probe and a virtual probe for memory electrical conduction and a correction amount for alignment; from a combination of a universal probe and a virtual probe based on electrical conduction Means for reading the above-mentioned correspondence relationship means for reading the correction amount for alignment; and for making the semiconductor wafer and the test probe based on the read correction amount The relative positional relationship is consistent with the means.

That is, in the semiconductor inspection apparatus having the alignment function of the present invention, the combination of the general-purpose probe and the dummy probe which are electrically conductive can be inspected via the common terminal for alignment and the dummy terminal formed on the substrate. According to this combination, the correspondence between the combination of the electrically-conductive universal probe and the virtual probe obtained in advance and the correction amount for alignment is read from the memory means, so that the offset from the reference position can be quantitatively grasped as a correction the amount.

Moreover, the present invention solves the above problems by providing an alignment method of a semiconductor inspection apparatus for electrically contacting a front end of a test probe with an electrode pad or a test of a semiconductor wafer. A method for aligning a semiconductor inspection device for inspecting electrical characteristics of a semiconductor wafer, comprising: 1) mounting a semiconductor wafer to be inspected and forming a common terminal for alignment and electrically connecting the common terminal The step of sending the base of one or more virtual terminals to the inspection position; 2) moving the universal probe and the plurality of virtual probes relative to the substrate sent to the inspection position, respectively, electrically contacting the universal probe with the pair The universal terminal for quasi-use, the step of electrically contacting any of the plurality of virtual probes to the virtual terminal; 3) the step of investigating the electrical conduction between the universal probe and the virtual probe; 4) the step of electrically conducting A memory device readout pair that combines a universal probe and a virtual probe to memorize the correspondence between the combination of the universal probe and the virtual probe that electrically conducts and the correction amount for alignment A step of the correction amount; 5) according to the correction amount read out to the semiconductor wafer and the test of the consistency of the relative position of the step of the probe.

In the alignment method of the present invention, a combination of a general-purpose probe and a virtual probe that are electrically conductive can be inspected via a common terminal for alignment and a dummy terminal formed on a substrate, and reading from a memory means according to the combination The correspondence between the combination of the universal probe and the virtual probe that is electrically determined in advance and the correction amount for alignment is obtained, so that the offset from the reference position can be quantitatively grasped as the correction amount, and the semiconductor wafer can be tested. Only the necessary amount of the probe is used to move relatively correctly, so that the positional relationship between the two is consistent.

Moreover, the present invention solves the above-described problems by providing a substrate and a probe card which is provided with a semiconductor wafer to be inspected and which is formed with a general-purpose terminal for alignment and one or more of which are electrically connected to the common terminal. a virtual terminal having a universal probe and a plurality of virtual probes at a position corresponding to a common terminal formed as a target substrate and one or a plurality of dummy terminals electrically connected to the common terminal .

The present invention is a substrate for a semiconductor wafer to be mounted, and is preferably a TAB tape in which an IC or an LSI such as a liquid crystal driver is mounted. However, a semiconductor substrate in which a plurality of semiconductor wafers are formed may be used. All of the mats of the mat or the test mat and the test probe are targeted.

According to the semiconductor inspection apparatus and the alignment method having the alignment function of the present invention, the offset from the reference position can be quantitatively known as the correction amount, so that the number of trial errors of the alignment operation can be reduced, and the acquisition can be performed. The advantage of efficient alignment. Moreover, according to the semiconductor wafer mounting base and the probe card of the present invention, the semiconductor inspection apparatus and the alignment method using the alignment function of the present invention can quantitatively grasp the offset from the reference position as By correcting the amount, the advantage of achieving an efficient alignment can be obtained.

Hereinafter, the present invention will be described by way of example with reference to the case where the substrate on which the semiconductor wafer is mounted is a TAB tape, but it is of course not limited to those illustrated in the present invention.

Fig. 1 is a schematic view showing an example of a semiconductor inspection apparatus having an alignment function according to the present invention. In Fig. 1, reference numeral 1 denotes a semiconductor inspection apparatus of the present invention, and the semiconductor inspection apparatus 1 is composed of an automatic sorter (Handler) 2 and a tester 3. 4 is a device reel, 5 is a storage reel, 6, 6 is a sprocket, and 7 is a TAB tape. The sprocket wheels 6 and 6 have a function of engaging the teeth of the sprocket in a sprocket hole provided in the TAB belt 7 and transporting the TAB belt 7 from the apparatus reel 4 to the accommodating reel 5. 8 is a pusher, 9 is an XY moving table, and 10 is a driving device that moves the pusher 8 in the up and down direction. The pusher 8 is provided with a suction means (not shown), and the TAB tape 7 is adsorbed, and the TAB tape 7 after the adsorption is moved by the XY moving table 9 in the XY direction. The device reel 4, the storage reel 5, the sprockets 6, 6, the pusher 8, the XY moving table 9, and the drive device 10 are constituent elements of the automatic sorter 2.

11 is the probe card and 12 is the tester head. The probe card 11 and the tester head 12 are constituent elements of the tester 3.

In the semiconductor inspection device 1 of the present invention, the automatic sorting machine 2 and the tester 3 are provided, and the semiconductor wafer mounted on the TAB tape 7 is sent to the inspection position by the sprocket wheels 6 and 6, and after the alignment, the push is performed. The machine 8 is lowered to electrically contact a plurality of test probes attached to the probe card 11 to the test pads of the semiconductor wafer, and the electrical characteristics thereof are inspected.

Further, the XY moving table 9 may be provided on the side of the tester head 12, and instead of moving the TAB tape 7 to the probe card 11, the probe card 11 may be moved to the TAB tape 7.

Fig. 2 is a cross-sectional view showing the relationship between the TAB tape 7 and the probe card 11 in an enlarged manner. 13 is a probe substrate, and 14 is a wiring board of the probe card 11. 15 is a semiconductor wafer mounted on the TAB tape 7, 16 and 16 are probes for testing attached to the probe card 11, 17 is a platform, and a recess 17a is provided in the stage 17. The recess 17a is opened to the TAB tape 7 via the through hole 18 provided in the substantially central portion of the probe substrate 13. When the depth of the recessed portion 17a is the thickness including the through hole 18, the depth of the semiconductor wafer 15 can be sufficiently accommodated. When the concave portion 17a is provided on the stage 17, when the TAB tape 7 is pressed to the probe card 11 side by the pusher 8, at least a part of the semiconductor wafer 15 mounted on the TAB tape 7 is accommodated in the concave portion 17a. The advantage of not coming into contact with the platform 17 can be obtained. Usually, the height of the semiconductor wafer 15 mounted on the TBA tape 7 is 0.8 mm, and the thickness of the probe card 11 is 0.14 mm. Therefore, the depth of the concave portion 17a is 0.8 mm to 0.14 mm, that is, as long as it is 0.64 mm or more. In addition, 19 is a spacer and 20 is a reinforcing plate.

Fig. 3 is a plan view showing an example of a TAB tape 7 of a substrate of the present invention. As shown in the figure, a plurality of semiconductor wafers 15, 15, 15, ... are mounted on the TAB tape 7, and the inner leads (not shown) of the respective semiconductor wafers 15, 15, 15, ... are the lead patterns 21 formed on the TAB tape. 21 and 21 are connected, and test pads (not shown) are formed at the tips of the lead patterns 21 and 21.

22 and 23 are terminals for large alignment and micro-alignment, respectively, which are formed on the TAB tape 7. In this example, the terminals 22 for the large alignment and the terminals 23 for the micro-alignment are formed as follows, and in order to obtain the average value of the correction amounts obtained from the respective terminals, each of the semiconductor wafers 15 is formed in two groups. It is a group and can also make the configuration angle different in each group. Further, depending on the case, only one of the terminals for large alignment or micro alignment may be provided. In addition, 24 and 24 are sprocket holes.

Fig. 4 is an enlarged view showing only a portion of the TAB tape 7 relating to one semiconductor wafer 15. For the same components as in Fig. 3, the same symbols are attached. 25 and 25 are probes for testing, and the probes 25 and 25 for testing are inspected so that the front end portion thereof contacts the test pad formed at the front end of the lead pattern 21 to check the electrical properties of the semiconductor wafer 15. Characteristic.

FIG. 5 is an enlarged view of the terminal 22 for large alignment. The terminal 22 for large alignment is composed of a long common terminal 22 _COM and a virtual terminal 22a protruding from a long central portion of the universal terminal 22 _COM in a direction perpendicular to the longitudinal direction of the long longitudinal direction. . From the case where the dummy terminal 22a protrudes from the common terminal 22 _COM , it is apparently electrically connected to the common terminal 22 _COM . α is a virtual center line in the width direction of the terminal 22a, in the present embodiment, since the dummy terminal 22a is a common terminal from a longitudinal direction central portion of the projection 22 _COM, so α is also a common terminal of the longitudinal direction centerline 22 _COM.

Fig. 6 is a plan view showing the relationship between the terminal 22 for large alignment, the universal probe, and the dummy probe. In Fig. 6, 26 _COM is a general-purpose probe, 26 ₁ to 26 ₁₉ are virtual probes, and virtual probes 26 ₁ to 26 _{19 are} all the same shape and the same size, and their front end portions are arranged in a straight line. W ₁ is the virtual probe 26 arrangement interval (pitch) of _2619, between the virtual probe 26 ₁ to 26 ₁₉ W into equal intervals. β is the center line in the width direction of the central virtual probe 26 _10. As shown, the universal probe 26 _COM is located at a position facing the central virtual probe 26 ₁₀ , so β is also the width of the universal probe 26 _COM . The centerline of the direction. A universal terminal 22 _COM is present directly below the universal probe 26 _COM , and a virtual terminal 22a is present directly below the virtual probe 26 ₁₀ .

Fig. 7 is a cross-sectional view taken along line XX' of Fig. 6. In the state of the figure, only the dummy probe 26 ₁₀ is in contact with the dummy terminal 22a. L is the length in the width direction of the dummy terminal 22a, and X is the tip diameter of the dummy probes 26 ₁ to 26 ₁₉ .

The universal probe 26 _COM and the dummy probes 26 ₁ to 26 ₁₉ are usually attached to the probe card 11 together with the probe for testing, but the general probe 26 _COM and the virtual probes 26 ₁ to 26 ₁₉ are formed in The positional relationship between the common terminal 22 _COM and the dummy terminal 22a on the TAB tape 7 is as shown next. That is, the positional relationship between the two is set at the inspection position, and when the TAB tape 7 of the semiconductor wafer 15 to be inspected is in a normal position, the center line β of the central virtual probe 26 ₁₀ comes to the virtual terminal 22a. The center line is on the alpha. Therefore, when the center line β of the central virtual probe 26 ₁₀ is located on the center line α of the virtual terminal 22a, in other words, if the central virtual probe 26 _{10 is in} contact with the virtual terminal 22a, the position is the center of the virtual terminal 22a. Then, the TAB tape 7 is in the inspection position, at least in the longitudinal direction of the long terminal of the common terminal 22 _COM , in a normal position.

Conversely, when the central virtual probe 26 _{10 is} not in contact with the virtual terminal 22a, or any of the other virtual probes 26 ₁ - 26 ₉ , 26 ₁₁ - 26 _{19 are} in contact with the virtual terminal 22a, the virtual probe of the contact The needle leaves the portion of the central virtual probe 26 ₁₀ and becomes the position where the position of the TAB tape 7 deviates from the normal position. For example, when any one of the outermost virtual probes 26 ₁ or 26 _{19 is} in contact with the dummy terminal 22a, the TAB tape 7 is in a detectable range, forming the most off-normal position from the central virtual probe 26 ₁₀ The distance to the virtual probe 26 ₁ or 26 ₁₉ is the maximum value that defines the detectable offset. In addition, the length of the universal terminal 22 _COM in the longitudinal direction is selected such that even if any one of the outermost virtual probes 26 ₁ or 26 _{19 is} in contact with the dummy terminal 22a, electrical contact with the universal probe 26 _COM is not The length that will be cut off. Further, in the illustrated example, the number of virtual probes is 19, but it is not limited to 19, and may be 18 or less, or 20 or more. However, it is desirable to set the number of virtual probes to an odd number so that the center of the virtual probe column can be clarified.

Hereinafter, the correspondence relationship between the combination of the virtual probes 26 ₁ to 26 ₁₉ electrically connected to the universal probe 26 _COM and the correction amount for alignment will be described with reference to FIGS. 8 to 10 . Further, in Figs. 8 to 10, the virtual probes 26 ₁ to 26 ₁₉ are displayed by numbering the probe.

Fig. 8 is a view showing only the central portion of Fig. 7 enlarged. In Fig. 8, the central virtual probe 26 ₁₀ is at the center of the virtual terminal 22a, and the TAB tape 7 is in a normal position. In this state, as shown in Fig. 6 previously, the universal probe 26 _COM is connected to the common terminal 22 _COM . Therefore, only the universal probe 26 _COM and the virtual probe 26 ₁₀ are in an on state, and the universal probe 26 _COM and other virtual probes are not in an on state.

Whereby the state shown in FIG. 8, for example, in FIG left or right direction when shifted by TAB tape 7 S _1, the virtual probe ₂₆₉ or probe ₂₆₁₁ also virtual contact with the virtual terminal 22a. This is also because the virtual probe 26 _{10 is} still in contact with the virtual terminal 22a, so the universal probe 26 _COM and the virtual probes 26 ₁₀ and 26 ₉ , or the universal probe 26 _COM and the virtual probes 26 ₁₀ and 26 ₁₁ will A conductive state is formed. When the distance S ₁ at this time is obtained, S ₁ is a subtraction (1/2) of the length L of the width direction of the virtual terminal 22a from the interval W between the virtual probes 26 ₉ to 26 ₁₀ and the virtual probe 26 The length of (12) of the front end diameter X of ₉ , that is,

S ₁ =W-(L/2)-(X/2)

That is, not only the virtual probe 26 ₁₀ , the adjacent virtual probe 26 ₉ or 26 ₁₁ and the universal probe 26 _COM are in an on state, the TAB band 7 is at least offset by a distance S ₁ in the left or right direction in the figure, When only the virtual probe 26 ₁₀ and the universal probe 26 _COM are in an on state, the offset of the TAB tape 7 is less than ±S ₁ .

Fig. 9 is a view showing a state in which the TAB tape 7 is shifted to the right direction in the figure, and the virtual probe 26 _{10 at the} center is not in contact with the virtual terminal 22a. The offset S ₂ at this time can be clearly seen from the figure:

S ₂ = (L/2) + (X/2)

That is, when the universal probe 26 _COM and the virtual probe 26 ₁₀ and the virtual probe 26 ₁₁ are in an on state, the offset of the TAB band 7 in the right direction of the figure is set to the right direction in the figure. The sign "negative" forms -S ₁ or more and -S ₂ or less. The state shown in Fig. 8 is the same when the TAB tape 7 is shifted to the left direction in the figure, except that the distances of S ₁ and S ₂ are changed to "negative" to "positive" display.

Fig. 10 is a view showing the state shown in Fig. 9. The TAB tape 7 is further shifted to the right direction in the figure, that is, the "negative" direction. In addition to the virtual probe 26 ₁₁ , the dummy probe 26 ₁₂ is added to the virtual terminal. The critical state of contact with 22a. The offset S ₃ at this time can be clearly seen from the figure:

S ₃ = W + {W - (L / 2) - (X / 2)} = 2W - (L / 2) - (X / 2).

That is, when the universal probe 26 _COM and the virtual probe 26 ₁₁ are in an on state, the offset of the TAB tape 7 in the right direction of the figure is formed to exceed -S ₂ and not to -S ₃ . If the above results are aggregated, the following Table 1 is formed.

However, the width of the offset due to the combination of the virtual probes that are turned on by the universal probe 26 _COM is preferably equal, so it is assumed that the universal probe 26 _COM and the virtual probes 26 ₁₀ and 26 ₁₁ are now in a conductive state. The width of the offset (=-S ₂ -(-S ₁ )) and the width of the offset when only the general probe 26 _COM and the virtual probe 26 ₁₁ are in the on state (=-S ₃ -(- S ₂ )) will be equal. If the relationship between W, L, and X at this time is obtained, the following will be formed.

That is, if -S ₂ -(-S ₁ )=-S ₃ -(-S ₂ ) is assumed, since 2S ₂ =S ₃ +S _{1 is formed} , if the above-mentioned S ₁ and S are substituted here, ₂ , S ₃ , then form 2{(L/2)+(X/2)}={2W-(L/2)-(X/2)}+{W-(L/2)-(X/ 2)}, if it is arranged, L+X=3W-LX is formed, that is, 3W=2 (L+X), and the arrangement interval W of the virtual probes 26 ₁ to 26 ₁₉ and the front end diameter X thereof are known. When the length L of the virtual pad 22a in the width direction is 3W=2 (L+X), the range of the offset due to the change in the combination of the virtual probes that are turned on by the universal probe 26 _COM is uniform.

Based on the above results, the results of the relationship between W, X, and L are evaluated on the premise that the tip diameter of the probe which is generally used is about 20 μm. When W = 60 μm, X = 22.5 μm, and L = 67.5 μm, it is confirmed. The pitch of the offset is formed to be equal to 30 μm. The combination of the virtual probes 26 ₁ to 26 _{19 which} are electrically connected to the general-purpose probe 26 _COM at this time, and the correspondence relationship between the offset amount and the correction amount at this time are shown in Table 2 and Table 3. Table 2 shows that when the virtual probes that are electrically connected to the universal probe 26 _COM are 26 ₁₀ to 26 ₁₉ , Table 3 shows that the virtual probes that are electrically connected to the universal probe 26 _COM are 26 ₁ to 26 ₁₀ , for convenience. Divided into 2, so only the virtual probe that is turned on with 26 _COM is displayed as 26 ₁₀ o'clock. Further, since the offset has a width, the average value of the range of each offset is taken as the correction amount for alignment. Further, of course, the sign of the correction amount is opposite to the sign of the offset amount, and when the correction amount when the virtual probe that is turned on by the universal probe 26 _COM is 26 ₁₀ to 26 ₁₉ is set to "+", the general probe is used. 26 When the virtual probe that is turned on by _COM is 26 ₁ to 26 ₁₀ , the correction amount is represented by "-".

In this way, since there is a correspondence between the combination of the virtual probes 26 ₁ to 26 ₁₉ that are turned on by the universal probe 26 _COM and the correction amount for alignment, the correspondence is first memorized in the memory device, and is requested according to the alignment. The combination of the virtual probes 26 ₁ to 26 ₁₉ that are turned on by the universal probe 26 _COM reads the corresponding correction amount from the memory device, thereby including the direction of the offset, and quantitatively knows the correction for alignment. the amount. Then, the semiconductor wafer 15 is relatively moved by the test probes 25, 25, ... in accordance with the amount of correction to be read, and the positional relationship between the two can be matched.

Fig. 11 is an enlarged view of the terminal 23 for micro alignment. The terminal 23 for micro-alignment is composed of a plurality of dummy terminals 23a to 23g protruding in a comb shape, and a comb-shaped root portion with respect to the dummy terminals 23a to 23g, and is electrically connected to a central portion of the root portion. The universal terminal 23 _COM is constructed. α is a center line in the width direction of the central virtual terminal 23d, D is an arrangement interval (pitch) of the dummy terminals 23a to 23g, and Y is a length in the width direction of the dummy terminals 23a to 23g. Further, all of the dummy terminals 23a to 23g have the same shape and the same size.

Fig. 12 is a plan view showing the relationship between the terminal 23 for micro-alignment and a general-purpose probe and a virtual probe. In Fig. 12, 27 _COM is a general-purpose probe for micro-alignment, 27 ₁ to 27 ₅ are virtual probes for micro-alignment, and W is an arrangement interval (pitch) of virtual probes 27 ₁ to 27 ₅ . Each of the virtual probes 27 ₁ to 27 _{5 has the} same shape and the same size, and the front end portions thereof are arranged in a straight line, and the interval W between the virtual probes 27 ₁ to 27 ₅ is uniform. β is a virtual center of the probe center line in the width direction of _273. As shown in the figure, the universal probe 27 _COM is at a position facing the central virtual probe 27 ₃ , and therefore β is also the center line in the width direction of the universal probe 27 _COM . In the presence of positive common terminal 23 _COM following general probes 27 of _{the COM,} the virtual terminal 23d is present right below the virtual probe _273.

Figure 13 is a cross-sectional view taken along line YY' of Figure 12 . As shown, the probe ₂₇₃ of the virtual present immediately below the dummy terminal 23d, there are dummy terminals 23c and 23e adjacent in the following virtual probe ₂₇₂ and _274, respectively, results, three virtual probe 27 ₂ , 27 ₃ , and 27 ₄ are in an ON state with the universal probe 27 _COM via the virtual terminals 23c to 23e and the common terminal 23 _COM . X is the front end diameter of the virtual probes 27 ₁ to 27 ₅ , and W, D, and Y are the arrangement intervals of the virtual probes 27 ₁ to 27 ₅ , the arrangement intervals of the dummy terminals 23 a to 23 g , and the dummy terminal 23 a as described above. ~23g length in the width direction. In addition, in FIG. 13, the virtual probes 27 ₁ to 27 ₅ are displayed by numbering the probe, and the virtual terminals 23a to 23g are displayed by writing the alphabet sequences a to g below the virtual terminals. .

Similarly to the general-purpose probe 26 _COM and the virtual probes 26 ₁ to 26 _{19 for} large alignment, the general-purpose probe 27 _COM and the dummy probes 27 ₁ to 27 _{5 for} micro-alignment are usually also used together with the probe for testing. Mounted on the probe card 11. The general-purpose probes 27 _COM and the virtual probes 27 ₁ to 27 ₅ are set to be common terminals 23 _COM and dummy terminals 23a to 23g for micro-alignment formed on the TAB tape 7, and are mounted at the inspection position. The TAB tape 7 of the semiconductor wafer 15 of the object is in a normal position, and the center line β of the central virtual probe 27 ₃ comes to the center line α of the central virtual terminal 23d. Therefore, as shown in FIG. 13, if the central virtual probe 27 _{3 is} in contact with the virtual terminal 23d at its central position, and the adjacent virtual probes 27 ₂ and 27 ₄ are in contact with the virtual terminals 23c and 23e, respectively, the TAB tape 7 is At least the position of the comb-like arrangement of the dummy terminals 23a to 23g (the horizontal direction in FIGS. 12 and 13) is formed at a regular position.

Further, the width of the common terminal 23 _COM , that is, the length along the arrangement direction of the dummy terminals 23a to 23g (the horizontal direction in FIGS. 12 and 13) is selected so that even the outermost virtual probe 27 ₁ or 27 ₅ moves. The electrical contact between the universal probe 27 _COM and the universal terminal 23 _COM is not cut off to a position where it can be sufficiently brought into contact with the outermost dummy terminal 23a or 23g. Further, in the illustrated example, the number of virtual terminals is seven, and the number of virtual probes is five, but the number of virtual terminals and virtual probes is not limited to these. However, it is desirable to have two more virtual terminals than the number of virtual probes.

Hereinafter, the correspondence relationship between the combination of the dummy probes 27 ₁ to 27 ₅ electrically connected to the general-purpose probe 27 _{COM for} micro-alignment and the correction amount for alignment will be described with reference to FIGS. 13 and 14 .

In Fig. 13, the central virtual probe 27 ₃ is in contact with the virtual terminal 23d at its central position, and the adjacent virtual probes 27 ₂ and 27 ₄ are also in contact with the virtual terminals 23c and 23e, respectively, and the TAB tape 7 is in a regular state. position. In this state, if the TAB tape 7 is shifted by s ₁ , for example, in the left or right direction in the drawing, either of the virtual probe 27 ₁ or the virtual probe 27 ₅ may come into contact with the dummy terminal 23b or 23f. This is also because the virtual probes 27 ₂ to 27 _{4 are} still in contact with the respective dummy terminals 23c to 23e, so the general probe 27 _COM and the virtual probes 27 ₂ to 27 ₄ and 27 ₁ or the general probe 27 _COM The on-state is formed with the virtual probes 27 ₂ to 27 ₄ and 27 ₅ .

When the distance s ₁ at this time is obtained, s ₁ is the interval 2 × D of the virtual terminals 23d to 23f subtracted from the interval 2 × W between the virtual probes 27 ₃ to 27 _{5 ,} and the virtual terminal 23 f is subtracted. (1/2) of the length Y in the width direction and (1/2) of the front end diameter X of the virtual probe 27 ₅ , that is, s ₁ = 2W - 2D - (Y/2) - (X/2 ).

That is, not only the virtual probes 27 ₂ to 27 ₄ , when the virtual probe 27 ₁ or 27 ₅ and the universal probe 27 _COM are in an on state, the TAB band 7 is at least offset by a distance s ₁ in the left or right direction in the figure. Conversely, when only the virtual probes 27 ₂ to 27 ₄ are in the on state with the general purpose probe 27 _COM , the offset of the TAB tape 7 is less than ± s ₁ .

FIG 14 is a view showing a state shown in FIG. 13, TAB tape 7 is shifted to the right direction, and the second from the left dummy probe ₂₇₂ limits non-contact state with the virtual terminal 23c. The offset s ₂ at this time is clearly known from the graph: s ₂ ={D+(Y/2)}-{W-(X/2)}.

That is, when the universal probe 27 _COM and the virtual probes 27 ₂ , 27 ₃ , 27 ₄ , and 27 ₅ are in an on state, the offset of the TAB band 7 in the right direction of the figure is the right direction in the figure. When the offset is set to "negative", -s ₁ or more and -s ₂ or less are formed. The state shown in Fig. 13 is the same when the TAB tape 7 is shifted to the left direction in the figure, except that the distances of s ₁ and s ₂ are changed to "negative" to "positive" display. If the above results are summarized, it will be as shown in Table 4.

However, similarly to the correction amount for large alignment, the width of the offset due to the change of the combination of the virtual probes that are turned on by the universal probe 27 _COM is preferably equal, so it is assumed that the universal probe 27 _COM and the virtual now The width of the offset (=2×s ₁ ) when the probes 27 ₂ to 27 ₄ are in the on state and the width of the offset when the general probe 27 _COM and the virtual probes 27 ₂ to 27 ₅ are in the on state ( =s _{2 -} s ₁ ) are equal, and if the relationship of W, D, X, and Y at this time is obtained, the following is formed.

That is, if 2s ₁ = s _{2 -} s ₁ is assumed, substituting the above-determined s ₁ and s ₂ becomes 2{2W-2D-(Y/2)-(X/2)}={D+(Y /2)}-{W-(X/2)}-{2W-2D-(Y/2)-(X/2)}, if it is sorted, it forms 4W-4D-YX=3D-3W+Y +X, that is, 7 (WD) = 2 (X + Y), the arrangement interval W of the dummy probes 27 ₁ to 27 ₅ and the front end diameter X thereof, and the arrangement interval D and width Y of the dummy pads 23a to 23g When 7 (WD) = 2 (X + Y), it is understood that the range of the offset due to the change in the combination of the virtual probes that are turned on by the general-purpose probe 27 _COM is uniform.

Based on the above results, the results of the relationship between W, X, D, and Y are evaluated on the premise that the tip diameter of the probe which is generally used is about 20 μm. When W = 60 μm, X = 22.5 μm, D = 50 μm, Y = At 12.5 μm, it was confirmed that the pitch of the offset was equal to 5 μm. The correspondence between the combination of the virtual probes 27 ₁ to 27 ₅ that are turned on by the general-purpose probe 27 _COM at this time, the offset amount at this time, and the correction amount is shown in Table 5. Further, since the offset has a width, the average value of the range of each offset is taken as the correction amount for alignment. In addition, of course, the sign of the correction amount is opposite to the sign of the offset.

In this way, since the combination of the virtual probes 27 ₁ to 27 ₅ that are turned on by the universal probe 27 _COM and the correction amount for alignment have a correspondence relationship, the correspondence is first memorized in the memory device, and is requested according to the alignment. The combination of the virtual probes 27 ₁ to 27 ₅ that are turned on by the universal probe 27 _COM reads the corresponding correction amount from the memory device, thereby including the direction of the offset, and quantitatively knows the correction for alignment. the amount. Then, the semiconductor wafer 15 is relatively moved by the test probes 25, 25, ... in accordance with the amount of correction to be read, and the positional relationship between the two can be matched.

Further, as shown in FIG. 4, when the terminal 22 for large alignment and the terminal 23 for micro-alignment are respectively provided in the TAB tape 7, the probe card 11 is used for general alignment and micro-alignment. The set of needles and virtual probes are also installed in each of the corresponding positions. When the large alignment terminal 22 and the micro alignment terminal 23 are respectively provided in the TAB tape 7 in two sets, the average value of the correction amount obtained by bringing the virtual probe into contact with each terminal can be used as the alignment. Correction amount. Therefore, for example, there is a slight offset in the formation position of the terminals 22 or 23 on the TAB tape 7, or the offset can be averaged to be equal, so that more precise alignment can be achieved.

Further, in the example shown in FIG. 4, both the terminal 22 for large alignment and the terminal 23 for micro-alignment are arranged in a direction in which a positional deviation from the direction in which the TAB tape 7 is conveyed is detected, because the formation is performed. The test pad of the TAB tape 7 is usually formed to a certain length in the conveying direction of the TAB tape 7, and the conveying direction of the TAB tape 7 is an alignment precision that cannot be obtained as high. If necessary, the terminal 22 for large alignment and the terminal 23 for micro-alignment can of course be rotated by 90 degrees with the arrangement shown in FIG. 4, and the positional shift of the TBA tape 7 in the conveyance direction can be detected.

Fig. 15 is a flow chart showing the alignment procedure of the semiconductor inspection apparatus and the alignment method having the alignment function of the present invention. As shown in Fig. 15, in the present invention, the automatic sorter and the tester exchange information first, and first perform large alignment based on the correction amount obtained by the terminal and the probe for the large alignment, and secondly, according to the use. The micro-alignment terminal and the correction amount obtained by the probe are used for micro-alignment. Then, at the point in time when the alignment is completed, the tester performs the predetermined electrical characteristic check.

[Industry use possibility]

According to the semiconductor inspection apparatus and the alignment method having the alignment function of the present invention, the positional deviation of the inspection position of the substrate on which the semiconductor wafer to be inspected is mounted can be quantitatively known, thereby reducing alignment. The number of trials and errors of the job is very useful for performing efficient alignment. Moreover, according to the semiconductor wafer mounting base and the probe card of the present invention, the semiconductor inspection apparatus and the alignment method using the alignment function of the present invention can quantitatively grasp the offset from the reference position as By correcting the amount, it is possible to obtain good industrial usefulness for achieving efficient alignment.

1. . . Semiconductor inspection device

2. . . Automatic sorter

3. . . Tester

4. . . Device reel

5. . . Containment reel

6. . . Sprocket

7. . . TAB belt

8. . . Push machine

9. . . XY mobile station

10. . . Drive unit

11‧‧‧ Probe Card

12‧‧‧Tester head

13‧‧‧Probe substrate

14‧‧‧Wiring substrate

15‧‧‧Semiconductor wafer

16‧‧‧ probe

17‧‧‧ platform

17a‧‧‧ recess

18‧‧‧through holes

22‧‧‧Great alignment terminal

23‧‧‧Micro-alignment terminals

25‧‧‧Test probe

26‧‧‧Alignment probe

W‧‧‧Configuration interval for alignment probe

X‧‧‧Alignment probe tip diameter

L‧‧‧ Wide alignment of virtual terminals

D‧‧‧Configuration interval of virtual terminals for micro-alignment

Y‧‧‧ Width of virtual terminal for micro-alignment

S, s‧‧‧ offset

Fig. 1 is a schematic view showing an example of a semiconductor inspection apparatus having an alignment function according to the present invention.

Fig. 2 is a cross-sectional view showing an enlarged relationship between a TAB tape and a probe card.

Fig. 3 is a plan view showing an example of a TAB tape.

Figure 4 is a partial enlarged view of the TAB belt.

Fig. 5 is an enlarged view of a terminal for large alignment.

Fig. 6 is a plan view showing the relationship between a terminal for large alignment and a general-purpose probe and a virtual probe.

Fig. 7 is a sectional view taken along the line X-X' of Fig. 6;

Figure 8 is a partial enlarged view of Figure 7.

Fig. 9 is a view showing a relationship between a virtual probe and a virtual terminal when the position is shifted.

Fig. 10 is a view showing a relationship between a virtual probe and a virtual terminal when the position is shifted.

Fig. 11 is an enlarged view of a terminal for micro alignment.

Fig. 12 is a plan view showing a relationship between a terminal for micro-alignment and a general-purpose probe and a virtual probe.

Fig. 13 is a sectional view taken along line Y-Y' of Fig. 12;

Fig. 14 is a view showing a relationship between a virtual probe and a virtual terminal when the position is shifted.

Fig. 15 is a flow chart showing a procedure for registration.

1. . . Semiconductor inspection device

2. . . Automatic sorter

3. . . Tester

4. . . Device reel

5. . . Containment reel

6. . . Sprocket

7. . . TAB belt

8. . . Push machine

9. . . XY mobile station

10. . . Drive unit

11. . . Probe card

12. . . Tester head

Claims (16)

A semiconductor inspection device having an alignment function, wherein a front end of a test probe is electrically contacted with an electrode pad or a test pad of a semiconductor wafer, and a semiconductor inspection device for inspecting electrical characteristics of the semiconductor wafer is characterized in that: The means for feeding the substrate of the semiconductor wafer to be inspected to the inspection position, and the universal probe and the plurality of dummy probes are relatively moved with respect to the substrate fed to the inspection position, and the common terminal for alignment formed on the substrate is provided. And means for contacting or disconnecting one or more virtual terminals electrically connected to the universal terminal; means for electrically conducting electrical conduction between the universal probe and the virtual probe; and universal probe and virtual for electrically conductive electrical conduction a means for associating a combination of probes with a correction amount for alignment; means for reading the correction amount for alignment from a combination of a general-purpose probe and a virtual probe that are electrically conductive; The correction amount is used to align the position of the relative position of the semiconductor wafer and the test probe. The semiconductor inspection device with alignment function according to claim 1, wherein the universal probe and the plurality of virtual probes are mounted on the probe card together with the test probe, so that the universal probe and the plurality of virtual probes are used. The means for relatively moving the substrate of the semiconductor wafer on which the inspection target is mounted includes a driving device that relatively moves the probe card to the substrate. A semiconductor with alignment function as claimed in claim 1 or 2 In the inspection apparatus, the means for associating the combination of the universal probe and the virtual probe that electrically electrically conducts with the correction amount for alignment is to store at least two types of correspondence between the large alignment and the micro alignment. A semiconductor inspection apparatus having an alignment function according to claim 1 or 2, wherein the substrate on which the semiconductor wafer to be inspected is mounted is a TAB tape. A method for aligning a semiconductor inspection device is an alignment method of a semiconductor inspection device for inspecting electrical characteristics of a semiconductor wafer by electrically contacting a front end of the test probe with an electrode pad or a test pad of the semiconductor wafer. The method includes: 1) a step of feeding a semiconductor wafer on which an inspection target is mounted, and forming a general-purpose terminal for alignment and a substrate of one or a plurality of dummy terminals electrically connected to the common terminal to an inspection position; 2) using a general-purpose probe And the plurality of virtual probes are relatively moved to the base body sent to the inspection position, and the universal probe is electrically contacted with the common terminal for alignment, and any one of the plurality of virtual probes is electrically contacted with the virtual terminal. Step; 3) investigating the electrical conduction between the universal probe and the virtual probe; 4) memorizing the electrically conductive universal probe and virtual probe from a combination of a universal probe and a virtual probe that are electrically conductive a step of reading the correction amount for alignment by the memory device corresponding to the correction amount for alignment; 5) making the semiconductor wafer and the test probe based on the read correction amount Relative positional relationship of the same step. Alignment side of the semiconductor inspection device as claimed in claim 5 In the method, in the base body, a common terminal and a group of one or a plurality of dummy terminals electrically connected to the common terminal are formed in at least one set for each of the large alignment and the micro alignment, and the above 2) The steps of 5) are repeated for at least one of the general-purpose terminals for large alignment and micro-alignment and the virtual probes for large alignment or micro-alignment, respectively. The method of aligning a semiconductor inspection apparatus according to claim 5 or 6, wherein the universal probe and the plurality of virtual probes are attached to the probe card together with the test probe, and the steps of the above 2) are The step of the probe card moving relative to the substrate sent to the inspection position. The alignment method of the semiconductor inspection apparatus according to claim 5 or 6, wherein the substrate on which the semiconductor wafer to be inspected is mounted is a TAB tape. A substrate characterized in that a semiconductor wafer to be inspected is mounted, and a general-purpose terminal for alignment and one or a plurality of dummy terminals electrically connected to the common terminal are formed. The base body of claim 9, wherein the common terminal for alignment and one or a plurality of dummy terminals electrically connected to the common terminal are a long universal terminal and a long central portion of the universal terminal. A virtual terminal that protrudes in a direction perpendicular to the longitudinal direction of the elongated shape. The substrate of claim 9, wherein the common terminal for alignment and one or a plurality of dummy terminals electrically connected to the common terminal are a plurality of dummy terminals protruding in a comb shape, and for the dummy terminals The comb-like root part is electrically connected to the central part of the root part Use the terminal. The substrate according to any one of claims 9 to 11, wherein the common terminal and the one or a plurality of dummy terminals electrically connected to the common terminal are used for large alignment and micro-alignment. At least one group is formed separately. The substrate according to any one of claims 9 to 11, wherein the substrate is a TAB tape. A probe card having a universal probe and a plurality of universal terminals formed by a base body on which a semiconductor wafer to be inspected is mounted and one or a plurality of dummy terminals electrically connected to the common terminal Virtual probe. The probe card of claim 14, wherein the general probe and the plurality of dummy probes each have at least one set for each of the large alignment and the micro alignment. The probe card of claim 14 or 15, wherein the platform on which the probe substrate is mounted has a concave portion that is mounted on the semiconductor wafer to be inspected via a through hole provided in a substantially central portion of the probe substrate. The substrate is opened to receive at least a portion of the semiconductor wafer to be inspected during detection.