TWI415230B - Epoxy resin composition for semiconductor sealing and semiconductor device - Google Patents

Abstract

Provided are a semiconductor-encapsulating epoxy resin composition that has good fluidity, a small coefficient of linear expansion, and a high glass transition temperature and exhibits low water absorptivity and excellent crack resistance. The semiconductor-encapsulating epoxy resin composition comprises (a) a naphthalene type epoxy resin represented by the following formula 1, (b) a phenolic resin hardener having at least one substituted or unsubstituted naphthalene ring in a molecule, (c) an inorganic filler, and (d) at least one compound selected from rare earth oxides or hydrotalcite compounds. In the formula 1, m and n are 0 or 1, R represents a hydrogen atom, a C1-4 alkyl group, or a phenyl group, G represents a glycidyl-containing organic group, provided that 35-85 parts by mass of the resin(wherein, m=0 and n=0) and 1-35 parts by weight of the resin(wherein, m=1 and n=1) are contained in 100 parts by mass of the resin represented by the formula 1.

Description

Epoxy resin composition for semiconductor encapsulation and semiconductor device

The invention relates to a method with good fluidity, small linear expansion coefficient, high glass transition temperature and low hygroscopicity, and excellent fracture-free solder cracking resistance, heat resistance reliability and moisture resistance reliability. A semiconductor device for encapsulating an epoxy resin and a semiconductor device sealed with a cured product of the resin composition.

In the past, semiconductor devices have been mainly used for resin-sealed diodes, transistors, ICs, LSIs, and ultra-LSIs. However, epoxy resins have excellent formability and adhesion compared to other thermosetting resins. Since electrical characteristics, mechanical properties, moisture resistance, and the like, the semiconductor device is generally sealed with an epoxy resin composition. However, in the past few years, with the advancement of miniaturization, weight reduction, and high performance of electronic devices, the integration of semiconductor devices has gradually progressed, and in the packaging technology for promoting semiconductor devices, The requirements for epoxy resins for semiconductor enclosures also include lead-free and increasingly stringent.

For example, in recent years, ICs or LSIs such as a ball matrix arrangement (BGA) or QFN which are excellent in high-density packaging have become mainstream, but this package has a problem that only one side is closed, and warpage after molding becomes large. In the past, in order to improve the warpage, one method can increase the crosslink density of the resin and increase the glass transition temperature, but the soldering temperature caused by the lead-free increase, the modulus of elasticity at high temperature is high, and the moisture absorption is also Since it is high, peeling at the interface between the cured epoxy resin and the substrate after solder reflow, and peeling of the interface between the semiconductor element and the semiconductor resin paste become a problem. Further, by using a resin having a low crosslinking density, the inorganic filler is highly filled, and the low water absorbability, the low expansion ratio, and the low modulus at a high temperature are improved, and the effect of reflow resistance can be expected. It becomes highly viscous and loses fluidity during molding. Moreover, since the glass transition temperature is low, there is a problem in reliability at high temperatures.

In the epoxy resin composition comprising an epoxy resin and a curing agent, an epoxy resin has been disclosed as a 1,1-bis(2,7-diglycidyl group) in Japanese Patent No. 3137202 (Patent Document 1). Oxy-1-naphthyl) alkane is a characteristic epoxy resin composition. The cured product of the epoxy resin is excellent in heat resistance and excellent in heat resistance, and is generally used to overcome the disadvantage that the cured product of the high heat-resistant epoxy resin is hard and fragile.

Further, Japanese Laid-Open Patent Publication No. 2005-15689 (Patent Document 2) discloses an epoxy resin composition containing 1,1-bis(2,7-diglycidyloxy-1-naphthyl). Alkane (a1) with 1-(2,7-diglycidyloxy-1-naphthyl)-1-(2-glycidyloxy-1-naphthyl)alkane (a2) and 1,1-double The epoxy resin (A) of (2-glycidyloxy-1-naphthyl)alkane (a3) and the hardener (B) are essential epoxy resin compositions, and the above (a1) and the aforementioned (a2) (a3) is contained in an amount of 40 to 95 parts by weight based on 100 parts by weight of the total of (a3). In other words, in the following general formula (1), it is preferable to contain m = 0 and n = 0 to 40 to 95 parts by weight.

(m, n represents 0 or 1, R represents a hydrogen atom, an alkyl group having 1 to 4 carbon atoms, or a phenyl group, and G represents an organic group having a glycidyl group)

(Patent Document 1) Japanese Patent No. 3137202 (Patent Document 2) JP-A-2005-15689

(disclosure of the invention)

The object of the present invention is to provide a fluid having good fluidity, a small coefficient of linear expansion, a high glass transition temperature, and low hygroscopicity, and a lead-free solder cracking property, heat resistance reliability, and moisture resistance. An epoxy resin composition for semiconductor encapsulation which is excellent in properties and a semiconductor device which is sealed by a cured product of the resin composition.

In order to achieve the above object, the present inventors have used a specific epoxy resin of the following formula (1) and a specific phenol resin, particularly the general formula (2), by combination, as a result of intensive research, and the fluidity is good, and the line is good. The coefficient of expansion is small, and has a high glass transition temperature and exhibits low hygroscopicity. Further, by using at least one or more compounds selected from the group consisting of rare earth oxides or hydrotalcite compounds, ionic impurities are stored for a long period of time at high temperatures. When it is lowered, an epoxy resin composition for semiconductor encapsulation which imparts a cured product excellent in heat resistance and moisture resistance can be obtained, and the present invention has finally been achieved.

Accordingly, the present invention provides an epoxy resin composition comprising: (A) a naphthalene type epoxy resin represented by the following formula (1), (m, n represents 0 or 1, R represents a hydrogen atom, an alkyl group having 1 to 4 carbon atoms, or a phenyl group, and G represents an organic group having a glycidyl group; but is contained in 100 parts by mass of the above formula (1) m = 0 and n = 0 are 35 to 85 parts by weight, m = 1 and n = 1 are 1 to 35 parts by weight) (B) phenol resin having at least one substituted or unsubstituted naphthalene ring in one molecule a hardener, (C) an inorganic filler, (D) at least one compound selected from the group consisting of rare earth oxides or hydrotalcite compounds; and a semiconductor device sealed with a cured product thereof; preferably a semiconductor device which is attached to a resin A semiconductor element is mounted on one surface of the substrate or the metal substrate, and substantially only one surface is closed on the resin substrate surface or the metal substrate surface side on which the semiconductor element is mounted.

The epoxy resin composition as described above preferably contains a phenol resin (B) hardener represented by the following formula (2).

(R ¹ and R ² each independently represent a hydrogen atom, an alkyl group having 1 to 4 carbon atoms, or a phenyl group, and p is an integer of 0 to 10)

The epoxy resin composition for semiconductor encapsulation of the present invention has good fluidity, small linear expansion coefficient, high glass transition temperature and low hygroscopicity, and exhibits excellent crack resistance, and is long-term at high temperatures. In the case of storage, the ionic impurities are lowered, so that it is a cured product which is excellent in heat resistance and moisture resistance. Therefore, the semiconductor device in which the cured product of the epoxy resin composition for semiconductor encapsulation of the present invention is sealed can be used industrially.

(The best form for implementing the invention)

Hereinafter, the present invention will be described in more detail.

[(A) Epoxy Resin]

The epoxy resin (A) used in the present invention contains the naphthalene type epoxy resin of the above formula (1), and is generally required to contain m=0 and n=0 in 100 parts by mass of the formula (1). 35 to 85 parts by weight, and m=1 and n=1 are 1 to 35 parts by weight.

When the content of m=0 and n=0 in the total of 100 parts by weight of the general formula (1) is less than 35 parts by mass, the viscosity of the resin composition is increased and the fluidity is lowered. When the amount exceeds 85 parts by mass, the crosslinking density of the resin composition is extremely lowered, so that the hardenability is lowered and the glass transition temperature is lowered, which is not preferable. Then, when m=1 and n=1 exceed 35 parts by mass, the crosslinking density increases, and the glass transition temperature rises, but the elastic modulus at high temperature also becomes high, which is not preferable. Further, in view of the curability, heat resistance and high-temperature elastic modulus of the obtained epoxy resin composition, the content of m=0 and n=0 is preferably 45 to 70 parts by mass, m=1 and n=1. The content of the person is 5 to 30 parts by mass.

In the publication of JP-A-2005-15689, it is preferable that m=0 and n=0 are 40 to 95 parts by weight in terms of reduction in fluidity and hardenability. However, the epoxy resin (A) used in the present invention is also a naphthalene structure as described above, but it has been found that the content of m=1 and n=1 is defined by the general formula (1), and the fluidity is good, and the line is The coefficient of expansion is small, and it has a high glass transition temperature and exhibits low hygroscopicity, and has excellent resistance to weld cracking.

Such an epoxy resin is specifically exemplified below.

(R, G is as described above), and R may specifically be an alkyl group such as a hydrogen atom, a methyl group, an ethyl group or a propyl group, or a phenyl group, and an organic group containing a glycidyl group of G may be specifically exemplified. Such as the basis shown below.

Further, in the present invention, in addition to the specific epoxy compound (A), the epoxy resin component may be used in combination with other epoxy resins. The other epoxy resin is not particularly limited, and examples thereof include a phenol novolak type epoxy resin, a novolak type epoxy resin such as a cresol novolak type epoxy resin, and a trisphenol methane type epoxy resin. Trisphenol type epoxy resin such as resin, trisphenol propane type epoxy resin, biphenyl type epoxy resin, phenol aralkyl type epoxy resin, biphenyl aralkyl type epoxy resin, heterocyclic type Epoxy resin, epoxy resin containing naphthalene ring, bisphenol A epoxy resin, bisphenol F epoxy resin, bisphenol epoxy resin, styrene epoxy resin, halogenated epoxy resin Alternatively, one or more of these may be used.

In this case, the specific epoxy resin (A) is preferably formulated in an amount of 50 to 100% by mass based on the epoxy resin (the specific epoxy resin (A) + other epoxy resin), and is particularly preferably 70~100% by mass. When the amount of the naphthalene type epoxy resin is less than 50% by mass, sufficient heat resistance, reflow property, moisture absorption property, and the like may not be obtained.

[(B) hardener]

The phenol resin of the component (B) of the epoxy resin composition of the present invention is a hardener of an epoxy resin acting as the component (A), and is used in the present invention to have at least one substitution or non-one in one molecule. A phenolic resin substituted with a naphthalene ring. It is preferably a phenol resin represented by the following formula (2).

(R ¹ and R ² each independently represent a hydrogen atom, an alkyl group having 1 to 4 carbon atoms, or a phenyl group, and p is an integer of 0 to 10) R ¹ and R ² , and examples thereof include a hydrogen atom, a methyl group, and B. An alkyl group such as a propyl group or a phenyl group.

By using a phenol resin hardener having such a naphthalene ring, the linear expansion coefficient is small, the glass transition temperature is high, and the temperature region above the glass transition temperature is a low modulus of elasticity, whereby a low water absorption cured product can be obtained, so that it is used. When the epoxy resin composition of the present invention is used as a sealing material for a semiconductor device, the crack resistance at the time of thermal shock can be improved, and the warpage of the package can be improved. Specific examples of the phenol resin having a naphthalene ring represented by the formula (2) include the following compounds (3) to (6).

Further, in the phenol resin of the component (B) of the epoxy resin composition of the present invention, other phenol resins may be used in combination with the specific phenol compound. The other phenol resin is not particularly limited, and examples thereof include a novolak type phenol resin such as a phenol novolak resin or a cresol novolak resin, a phenol aralkyl type phenol resin, and a biphenyl aralkyl type. A phenolic resin, a biphenyl phenol resin, a trisphenol methane phenol resin, a trisphenol phenol resin, a trisphenol phenol resin, an alicyclic phenol resin, a heterocyclic phenol resin, and a bisphenol A phenol resin One or two or more of these may be used as a bisphenol type phenol resin such as a bisphenol F type phenol resin.

In this case, the amount of the specific phenol resin (B) of the above formula (2) is preferably 25 to 100 with respect to the phenol resin (specific phenol resin (B) + other phenol resin of the above formula (2)). The mass% is particularly preferably 40 to 80% by mass. When the amount of the naphthalene type phenol resin is less than 25% by mass, sufficient heat resistance, moisture absorption characteristics, warpage characteristics, and the like may not be obtained.

In the present invention, the blending ratio of the epoxy resin of the component (A) and the phenol resin of the component (B) is not particularly limited, but is contained in the curing agent with respect to 1 mol of the epoxy group contained in the epoxy resin. The molar ratio of the phenolic hydroxyl group is from 0.5 to 1.5, particularly preferably from 0.8 to 1.2.

[(C) Inorganic Filler]

The inorganic filler of the component (C) to be blended in the epoxy resin composition of the present invention can be prepared by using a general epoxy resin composition. For example, cerium oxide such as molten cerium oxide or crystalline cerium oxide, aluminum oxide, cerium nitride, aluminum nitride, boron nitride, titanium oxide, glass fiber, antimony trioxide or the like can be given. The average particle diameter or the formation of the inorganic filler and the filling amount of the inorganic filler are not particularly limited. However, in order to improve the weld crack resistance and the flame retardancy, the epoxy resin composition is not damaged. The range of sex should be filled as much as possible.

In this case, the average particle diameter and shape of the inorganic filler are preferably spherical yttrium oxide having an average particle diameter of 3 to 30 μm, particularly preferably 5 to 25 μm. Here, the average particle diameter is obtained by using a particle size distribution measuring device such as a laser light diffraction method or the like to obtain a weight average value (or a median diameter). Further, the inorganic filler is a bonding strength between the reinforcing resin and the inorganic filler, and it is preferred to prepare a surface treatment agent such as a coupling agent such as a decane coupling agent or a phthalate coupling agent.

Preferably, the coupling agent is γ-glycidoxypropyltrimethoxydecane, γ-glycidoxymethyldiethoxydecane, γ-isocyanatepropyltriethoxydecane, γ-ureido Epoxytrioxane, β-(3,4-epoxycyclohexyl)ethyltrimethoxydecane, etc.; N-(β-aminoethyl)-γ-aminopropyl Amino decanes such as methoxy-methoxy decane, γ-aminopropyl triethoxy decane, N-phenyl-γ-aminopropyltrimethoxy decane; γ-hydrothiopropyltrimethoxy a thioxane coupling agent such as a thioxane such as decane or a reaction product of an imidazole compound and γ-glycidoxypropyltrimethoxydecane. These may be used alone or in combination of two or more.

Further, the amount of the coupling agent used in the surface treatment and the surface treatment method are not particularly limited.

The filling amount of the inorganic filler is 200 to 1100 parts by mass, particularly preferably 500 to 800 parts by mass, based on 100 parts by mass of the total of the (A) epoxy resin and the (B) curing agent (phenol resin), and the filling amount is not When the amount is 200 parts by mass, the expansion coefficient is increased, the warpage of the package is increased, the stress applied to the semiconductor element is increased to cause deterioration of the device characteristics, and the amount of the resin in the entire composition is increased, so that the moisture resistance is remarkable. Reduced, crack resistance is also reduced. On the other hand, when it exceeds 1,100 parts by mass, the viscosity at the time of molding becomes high, and the formability may be deteriorated. Further, the inorganic filler is a composition of 75 to 91% by mass, particularly preferably 78 to 89% by mass, more preferably 83 to 87% by mass.

[(D) rare earth oxide or hydrotalcite compound]

The compound of at least one of the compounds used in the present invention is selected from the group consisting of (D) a rare earth oxide or a hydrotalcite compound for the purpose of capturing hetero impurities and neutralizing the acidity of the cured product.

The hydrotalcite system can be used by a person known in the art. Specifically, as long as it is a license No. 2501820, 2519277, 2712898, 3167853, special fair 06-051826, special Kaiping 09-118810, special Kaiping 10-158360, special Kaiping 11-240937, special Kaiping 11-310766 Any one of those described in JP-A-2000-159520, JP-A-2000-230110, JP-A-2002-080566, etc., is considered to improve moisture resistance and heat resistance.

In particular, a plurality of use examples can be exemplified as the heterocible trapping material of the semiconductor sealing material, and it is preferably a compound represented by the following formula (7).

Mg _x Al _y (OH) _2x+3y+2z (CO ₃ ) _z . mH ₂ O (7) (x, y, and z have a relationship of 0 < y / x ≦ 1, 0 ≦ z / y < 1.5, respectively, and m represents an integer.)

The rare earth group oxide phosphate ion, organic acid ion, and the like have excellent capturing ability, and metal ions are not eluted even under high temperature and high humidity. Moreover, it does not affect the hardenability of the epoxy resin composition.

Examples of the rare earth oxide include cerium oxide, cerium oxide, cerium oxide, cerium oxide, cerium oxide, cerium oxide, cerium oxide, cerium oxide, cerium oxide, cerium oxide, cerium oxide, cerium oxide, and the like.

In the present invention, it is preferred to use at least one of the above-described hydrotalcites and rare earth oxides, and it is preferred to use two or more types. The amount of addition is not particularly limited, but is preferably from 2 to 20 parts by mass, particularly preferably from 3 to 10 parts by mass, per 100 parts by mass of the total of the components (A) and (B). When the amount is less than 2 parts by mass, a sufficient ion capturing effect may not be obtained, and if it exceeds 20 parts by mass, the fluidity may be lowered.

[Other compounding ingredients]

In the sealing resin composition of the present invention, various additives may be further blended as needed. For example, a hardened contact coal such as an imidazole compound, a tertiary amine compound, or a phosphorus compound, a zinc oxide molybdate supporting zinc oxide, a zinc molybdate supporting talc, a phosphazene compound, magnesium hydroxide, aluminum hydroxide, or the like may be added. A coloring agent such as a thermoplastic resin, a thermoplastic elastomer, an organic synthetic rubber, a low stress agent such as polyfluorene oxide, a wax such as carnauba wax, oxidized polyethylene or montanic acid ester, carbon black or Ketjen black.

Further, in the present invention, in order to promote the hardening reaction between the epoxy resin and the curing agent, it is preferred to use a curing accelerator. The hardening accelerator is not particularly limited as long as it promotes the hardening reaction, and for example, triphenylphosphine, tributylphosphine, tris(p-methylphenyl)phosphorus, tris(nonylphenyl)phosphorus, or the like may be used. Phosphorous compounds such as triphenylphosphine/triphenylboron, tetraphenylphosphine/tetraphenylborate, triphenylphosphine/benzoquinone adduct, triethylamine, benzyldimethylamine, α a third-order amine compound such as -methylbenzyldimethylamine, 1,8-diazabicyclo(5,4,0)undecene-7, 2-methylimidazole, 2-phenyl An imidazole compound such as imidazole or 2-phenyl-4-methylimidazole.

The amount of the curing accelerator is an effective amount, but the curing accelerator for promoting the hardening reaction of the epoxy resin such as the phosphorus compound, the third amine compound, or the imidazole compound and the curing agent (phenol resin) is relative to the epoxy resin. The total amount of the resin and the hardener is 100 parts by mass, and is 0.1 to 3 parts by mass, particularly preferably 0.5 to 2 parts by mass.

The release agent component is not particularly limited, and any of the known ones can be used. For example, an ester compound of carnauba wax, rice bran wax, polyethylene, oxidized polyethylene, montanic acid, montanic acid and saturated alcohol, 2-(2-hydroxyethylamino)-ethanol, ethylene glycol, glycerin or the like may be mentioned. Lignite wax; stearic acid, stearic acid ester, decylamine stearate, decylamine bis-stearate, a copolymer of ethylene and vinyl acetate, etc., may be used alone or in combination of two or more. And use.

The blending ratio of the release agent is 0.1 to 5 parts by mass, more preferably 0.3 to 4 parts by mass, per 100 parts by mass of the total of the components (A) and (B).

[Modulation of epoxy resin composition]

The general method for preparing the sealing resin composition of the present invention as a molding material is to prepare an epoxy resin, a curing agent, an inorganic filler, and other additives in a specific composition ratio, and then uniformly and uniformly mix the mixture with a mixer to The heat roller, the kneader, the extruder, and the like are melt-mixed, and then solidified by cooling, and pulverized into an appropriate size to form a molding material.

In addition, when the composition is sufficiently uniformly mixed by a mixer or the like, surface treatment or the like is performed in advance with a decane coupling agent or the like in order to sufficiently preserve the storage stability or form a wetting agent.

Here, the decane coupling agent may, for example, be γ-glycidoxypropyltrimethoxydecane, γ-glycidoxymethyldiethoxydecane, or γ-glycidoxypropyltri Ethoxy decane, p-styryl trimethoxy decane, γ-methyl propylene methoxy propyl triethoxy decane, γ-acryloxypropyl trimethoxy decane, N-β (amine B Γ-aminopropylmethyldimethoxydecane, N-β(aminoethyl)γ-aminopropyltrimethoxydecane, N-β(aminoethyl)γ-aminopropyltri Ethoxy decane, γ-aminopropyltrimethoxydecane, γ-aminopropyltriethoxydecane, N-phenyl-γ-aminopropyltrimethoxydecane, γ-hydrothiopropyl Methyldimethoxydecane, γ-hydrothiopropyltrimethoxydecane, bis(triethoxypropyl)tetrasulfide, γ-isocyanatepropyltriethoxydecane, and the like. Here, the decane coupling dose and the surface treatment method used for the surface treatment are not particularly limited.

The epoxy resin composition for semiconductor encapsulation of the present invention obtained in this manner can be effectively utilized for the sealing of various semiconductor devices. In this case, the most common method of sealing is, for example, a low-pressure transfer molding method. Further, the molding temperature of the resin composition for sealing of the present invention is 150 to 185 ° C for 30 to 180 seconds, and the post-hardening is preferably carried out at 150 to 185 ° C for 2 to 20 hours.

In this case, the epoxy resin composition of the present invention is used in a semiconductor device in which a semiconductor element is mounted on one surface of a resin substrate or a metal substrate, and is effectively used for sealing only a single resin substrate surface or a metal substrate surface side on which the semiconductor element is mounted. Therefore, it is suitable for use in the sealing of a spherical matrix arrangement or a package of QFN or the like.

[Examples]

Hereinafter, the present invention will be specifically described by way of examples and comparative examples, but the present invention is not limited to the examples described below. Further, in the following examples, any of the parts is a part by mass.

[Examples 1 to 6 and Comparative Examples 1 to 4]

The two hot rolls of the components shown in Table 2 were uniformly melt-mixed, cooled, and pulverized to obtain an epoxy resin composition for semiconductor encapsulation. The raw materials used are shown below.

(epoxy resin)

In the epoxy resin of the above formula (1), the epoxy resins (i) to (iii) having the following structures are used according to the values of m and n, and the epoxy resin (1) shown in Table 1 is used according to the blending ratio. (2), and (3) a biphenyl aralkyl type epoxy resin (NC3000: a product name manufactured by Nippon Kayaku Co., Ltd.). G is indicated.

Epoxy resin (i) (m=0, n=0) Epoxy resin (ii) (n=0 when m=1, n=1 when m=0) Epoxy resin (iii) (m=1, n=1)

(phenol resin)

Phenolic resin (4): a phenol resin represented by the following formula a mixture of q = 0 to 10 Phenolic resin (5): a phenol resin represented by the following formula r = 0~10 mixture Novolac type phenol resin (6): TD-2131 (trade name of Dainipa InK Chemical Industry Co., Ltd.)

(Inorganic filler)

Spherical molten cerium oxide (trade name of Longsen) ion trapping material (6): Hydrotalcite compound DHT-4A-2 (trade name of Kyowa Chemical Co., Ltd.) ion trapping material (7): yttrium oxide ( III) (Shin-Etsu Chemical Co., Ltd. product name) Ion-capture material (8): yttrium oxide (III) (trade name of Shin-Etsu Chemical Co., Ltd.) ion-trapping material (9): lanthanide compound IXE-55 (East Asian synthesis) (share) system name)

(other additives)

Hardening accelerator: Triphenylphosphine (trade name of Beixing Chemical Co., Ltd.) Release agent: Carnauba wax (trade name of Nikko Fine Products Co., Ltd.) decane coupling agent: KBM-403, γ-glycidoxy Propyltrimethoxydecane (trade name of Shin-Etsu Chemical Co., Ltd.)

Regarding these compositions, the following characteristics were measured. The results are shown in Table 2.

(a) The spiral flow value was measured using a mold according to the EMMI specification at 175 ° C, 6.9 N/mm ² , and a molding time of 120 seconds.

(b) Melt viscosity, viscosity was measured at a temperature of 175 ° C using a high-pressure flow tester using a nozzle having a diameter of 1 mm under a pressure of 10 kgf/cm ² .

(c) Glass transition temperature and coefficient of linear expansion were measured using a mold according to EMMI specifications at 175 ° C, 6.9 N/mm ² , and a molding time of 120 seconds.

(d) Water absorption rate A disk having a diameter of 50 × 3 mm was formed at a temperature of 175 ° C, 6.9 N/mm ² , and a molding time of 2 minutes, and was placed at 85 ° C / 85% RH after hardening at 180 ° C for 4 hours. The water absorption rate was measured by a constant temperature and humidity device for 168 hours.

(e) The amount of warpage of the package was 0.40 mm thick BT resin substrate, the package size was 32 × 32 mm, and the thickness was 1.2 mm, and a 10 × 10 × 0.3 mm tantalum wafer was mounted at 175 ° C, 6.9 N / mm ² After the curing time was 2 minutes, the molding was carried out, and then post-hardening was performed at 175 ° C for 5 hours to prepare a package having a size of 32 × 32 mm and a thickness of 1.2 mm, and then using a laser three-dimensional measuring machine toward the package. The change in height is measured in the diagonal direction, and the maximum value of the variation is used as the amount of warpage.

(f) Reflow resistance The package used in the measurement of the warpage of the package was placed in a constant temperature and humidity device at 85 ° C / 60% RH for 168 hours to absorb moisture, and then the IR reflow device was used, as shown in FIG. After IR reflow conditions were three times, an ultrasonic probe device was used to observe the occurrence of internal cracks and the occurrence of peeling.

(g) The concentration of the ionic impurities of the extracted water after long-term high-temperature storage was 175 ° C, 6.9 N/mm ² , and a molding time of 2 minutes, and 5 disks having a diameter of 50 × 3 mm were formed to be post-hardened at 180 ° C. The hour is stored at 175 ° C for 1000 hours. Then, it was pulverized by a disc grinder, and 50 g of ion-exchanged water was added to 10 g of a pulverized product of 75 μm ON and 150 μm PASS in a mesh opening, and the mixture was extracted in a pressure-resistant container at 125 ° C for 20 hours. The electrical conductivity, pH, and various impurity ion concentrations of the filtrate were measured by ion chromatography, atomic absorption, and the like.

(h) Heat-resistance reliability A 6×6 mm 矽 wafer formed with 5 μm-width, 5 μm-spaced aluminum wiring was attached to a 14-pin-DIP holder (42 alloy), and the aluminum electrode and the lead frame on the wafer surface were further 25 μm. After the gold wire of Φ was subjected to wire bonding, the epoxy resin composition was molded at a molding condition of 175 ° C, 6.9 N/mm ² , and a molding time of 120 seconds, and hardened at 180 ° C for 4 hours. The package was subjected to a DC bias voltage of -10 V in an environment of 175 ° C for 1000 hours, and the average value of the resistance values was examined.

(i) Humidity resistance: A 6 x 6 mm tantalum wafer formed with 5 μm-width, 5 μm-spaced aluminum wiring was attached to a 14-pin-DIP holder (42 alloy) to further the aluminum electrode and the lead frame on the wafer surface. After the 25 μm Φ gold wire was subjected to wire bonding, the epoxy resin composition was molded at a molding condition of 175 ° C, 6.9 N/mm ² , and a molding time of 120 seconds, and hardened at 180 ° C for 4 hours. The package was subjected to a DC bias voltage of -20 V in an environment of 130 ° C / 85% RH for 500 hours, and the number of packages in which aluminum corrosion occurred was investigated.

Figure 1 shows IR reflow conditions for the measurement of reflow resistance.

Claims (3)

An epoxy resin composition comprising: (A) a naphthalene type epoxy resin represented by the following formula (1), (m, n represents 0 or 1, R represents a hydrogen atom, an alkyl group having 1 to 4 carbon atoms, or a phenyl group, and G represents an organic group having a glycidyl group; but is contained in 100 parts by mass of the above formula (1) m = 0 and n = 0 are 35 to 85 parts by weight, m = 1 and n = 1 are 1 to 35 parts by weight) (B) phenol resin having at least one substituted or unsubstituted naphthalene ring in one molecule a hardener containing 25 to 100 parts by mass of the phenol resin of the formula (2) in 100 parts by mass of the total phenol resin (R ¹ and R ² each independently represent a hydrogen atom, an alkyl group having 1 to 4 carbon atoms, or a phenyl group, and p is an integer of 0 to 10), (C) an inorganic filler, and (D) at least one compound selected from the group consisting of a rare earth oxide or hydrotalcite compound selected from the group consisting of cerium oxide, cerium oxide, cerium oxide, cerium oxide, cerium oxide, cerium oxide, cerium oxide, cerium oxide, cerium oxide, cerium oxide, cerium oxide. The amount of the component (D) to be added is 2 to 20 parts by mass based on 100 parts by mass of the total of the components (A) and (B). An epoxy resin composition according to claim 1, wherein the component (D) is a compound represented by the following formula (7): Mg _x Al _y (OH) _{2x + 3y + 2z} (CO ₃ ) _z . mH ₂ O (7) (x, y, z have a relationship of 0 < y / x ≦ 1, 0 ≦ z / y < 1.5, respectively, and m represents an integer). A semiconductor device in which a semiconductor element is mounted on one surface of a resin substrate or a metal substrate, and substantially only one surface of the resin substrate surface or the metal substrate surface side on which the semiconductor element is mounted is as claimed in claim 1 or The cured product of the epoxy resin composition of the two items is sealed.