JPH05175370A - Epoxy resin molding material for sealing electronic component - Google Patents

Epoxy resin molding material for sealing electronic component

Info

Publication number
JPH05175370A
JPH05175370A JP3343321A JP34332191A JPH05175370A JP H05175370 A JPH05175370 A JP H05175370A JP 3343321 A JP3343321 A JP 3343321A JP 34332191 A JP34332191 A JP 34332191A JP H05175370 A JPH05175370 A JP H05175370A
Authority
JP
Japan
Prior art keywords
epoxy resin
resin
molding material
reflow
package
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP3343321A
Other languages
Japanese (ja)
Other versions
JP3049898B2 (en
Inventor
Shinsuke Hagiwara
伸介 萩原
Seiichi Akagi
清一 赤城
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Showa Denko Materials Co Ltd
Original Assignee
Hitachi Chemical Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
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Application filed by Hitachi Chemical Co Ltd filed Critical Hitachi Chemical Co Ltd
Priority to JP3343321A priority Critical patent/JP3049898B2/en
Publication of JPH05175370A publication Critical patent/JPH05175370A/en
Application granted granted Critical
Publication of JP3049898B2 publication Critical patent/JP3049898B2/en
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Expired - Lifetime legal-status Critical Current

Links

Abstract

PURPOSE:To obtain an epoxy resin composition excellent in high Tg and reflow resistance by blending a specific epoxy resin having the naphthalene skeleton as the base resin. CONSTITUTION:A material comprises an epoxy resin represented by a formula, a phenolic novolak resin, and an inorganic filler of volume 60% or more. The epoxy resin has a naphthalene skeleton. This resin can be synthesized by epoxidizing a resin having dihydroxynaphthalen and naphthol as materials, which is obtainable by reacting them on a formaldehyde under an acid catalyst. The higher the ratio of the dihydroxynaphthalene, the higher become the glass transition temperature and the strength against higher temperatures. Also, the properties of the reflow cracking resistance become excellent. The equivalent ratio between the epoxy resin and the phenol resin should preferably be within a range of 0.8 to 1.3 from the viewpoint of the properties of setting, heat resistance, and the like.

Description

【発明の詳細な説明】Detailed Description of the Invention

【0001】[0001]

【産業上の利用分野】本発明は電子部品封止用エポキシ
樹脂成形材料に関するもので、特に、表面実装用プラス
チックパッケージICが対象となる。
BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an epoxy resin molding material for encapsulating electronic parts, and is particularly applicable to surface mount plastic package ICs.

【0002】[0002]

【従来の技術】従来から、トランジスタ、ICなどの電
子部品封止の分野ではエポキシ樹脂成形材料が広く用い
られている。この理由としては、エポキシ樹脂が電気特
性、耐湿性、耐熱性、機械特性、インサート品との接着
性などの諸特性にバランスがとれているためである。特
に、オクソクレゾールノボラック型エポキシ樹脂とフェ
ノールノボラック硬化剤の組み合わせはこれらのバラン
スに優れており、IC封止用成形材料のベース樹脂とし
て主流になっている。
2. Description of the Related Art Conventionally, epoxy resin molding materials have been widely used in the field of encapsulating electronic parts such as transistors and ICs. The reason for this is that the epoxy resin is well balanced in various characteristics such as electric characteristics, moisture resistance, heat resistance, mechanical characteristics, and adhesiveness with insert products. In particular, a combination of an oxocresol novolac type epoxy resin and a phenol novolac curing agent has an excellent balance of these, and has become the mainstream as a base resin for a molding material for IC encapsulation.

【0003】[0003]

【発明が解決しようとする課題】近年、電子部品のプリ
ント配線板への高密度実装化が進んでおり、これに伴い
電子部品は従来のピン挿入型のパッケージから表面実装
型のパッケージが主流になっている。IC、LSIなど
の表面実装型ICは実装密度を高くし、実装高さを低く
するために薄型、小型のパッケージになっており、素子
のパッケージに対する占有体積が大きくなりパッケージ
の肉厚は非常に薄くなってきた。さらに、これらのパッ
ケージは従来のピン挿入型のものと実装方法が異なって
いる。即ち、ピン挿入型パッケージはピンを配線板に挿
入した後、配線板裏面からはんだ付けを行うため、パッ
ケージが直接高温にさらされることがなかった。しか
し、表面実装型ICは配線板表面に仮止めを行い、はん
だバスやリフロー装置などで処理されるため、直接はん
だ付け温度にさらされる。この結果、ICパッケージが
吸湿した場合、はんだ付け時に吸湿水分が急激に膨張
し、パッケージをクラックさせてしまう。現在、この現
象が表面実装型ICに係わる大きな問題となっている。
現行のベース樹脂組成で封止したICパッケージでは、
上記の問題が避けられないためICを防湿梱包して出荷
したり、配線板へ実装する前に予めICを充分乾燥して
使用するなどの方法がとられている。しかし、これらの
方法は手間がかかり、コストも高くなる。本発明は係る
状況に鑑みなされたもので、配線板への実装の際、特定
の前処理をすることなく、はんだ付けを行うことができ
る電子部品封止用エポキシ樹脂成形材料を提供しようと
するものである。
In recent years, high-density mounting of electronic parts on a printed wiring board has been advanced, and along with this, electronic parts have been mainly used from a conventional pin insertion type package to a surface mount type package. Is becoming Surface mount ICs such as ICs and LSIs are thin and small packages in order to increase the mounting density and reduce the mounting height, and the volume occupied by the device with respect to the package is large, and the thickness of the package is very large. It's getting thinner. Furthermore, these packages are different in mounting method from the conventional pin insertion type. That is, in the pin insertion type package, after the pins are inserted into the wiring board, soldering is performed from the rear surface of the wiring board, so that the package is not directly exposed to high temperature. However, the surface-mount type IC is directly exposed to the soldering temperature because it is temporarily fixed to the surface of the wiring board and processed by a solder bath or a reflow device. As a result, when the IC package absorbs moisture, the absorbed moisture rapidly expands during soldering, which causes the package to crack. At present, this phenomenon is a big problem in the surface mount type IC.
In the IC package sealed with the current base resin composition,
Since the above problems cannot be avoided, methods are taken such as shipping the IC in moisture-proof packaging before shipment, or drying the IC sufficiently before mounting it on a wiring board. However, these methods are laborious and costly. The present invention has been made in view of the above circumstances, and an object of the present invention is to provide an epoxy resin molding material for electronic component encapsulation, which can be soldered without performing a specific pretreatment at the time of mounting on a wiring board. It is a thing.

【0004】[0004]

【課題を解決するための手段】発明者らは上記の課題を
解決するために鋭意検討を重ねた結果、ベース樹脂とし
てナフタレン骨格を有する特定のエポキシ樹脂を配合す
ることにより上記の目的を達成しうることを見い出し、
本発明を完成するに至った。すなわち、本発明の電子部
品封止用エポキシ樹脂成形材料は、主成分として (A)構造式が
Means for Solving the Problems As a result of intensive studies to solve the above problems, the inventors achieved the above object by blending a specific epoxy resin having a naphthalene skeleton as a base resin. Find out
The present invention has been completed. That is, the epoxy resin molding material for electronic component encapsulation of the present invention has (A) structural formula as the main component.

【化2】 で示されるエポキシ樹脂 (B)フェノール類のノボラック樹脂及び (C)60体積%以上の無機充填剤からなることを特徴
とする。
[Chemical 2] The epoxy resin (B) is a novolac resin of phenols and (C) 60% by volume or more of an inorganic filler.

【0005】本発明における(A)のエポキシ樹脂はナ
フタレン骨格を有するものであり、エポキシ樹脂の純
度、特に加水分解性塩素量はICなど素子上のアルミ配
線腐食に係わるため少ない方がよく、耐湿性の優れた電
子部品封止用エポキシ樹脂成形材料を得るためには50
0ppm 以下であることが好ましいが、特に限定するもの
ではない。ここで、加水分解性塩素量とは試料のエポキ
シ樹脂1gをジオキサン30mlに溶解し、1N−KOH
メタノール溶液5mlを添加して30分間リフラックス
後、電位差滴定により求めた値を尺度としたものであ
る。(A)のエポキシ樹脂は、ジヒドロキシナフタレン
及びナフトールを原料として、酸触媒下でホルムアルデ
ヒドと反応させて得られた樹脂をエポキシ化することで
合成できるが、ジヒドロキシナフタレンの比率が高いほ
どガラス転移温度、高温強度は高くなり、耐リフローク
ラック性にも優れることが分かった。さらに、(A)で
示す構造を効率よく得るためには、2,7−ジヒドロキ
シナフタレン及びβナフトールを原料とすることが望ま
しい。
The epoxy resin (A) in the present invention has a naphthalene skeleton, and the purity of the epoxy resin, particularly the amount of hydrolyzable chlorine, is preferably related to the corrosion of aluminum wiring on elements such as ICs, and therefore it is preferable that the epoxy resin is low in moisture resistance. 50 to obtain an epoxy resin molding material with excellent electrical properties for encapsulating electronic components
It is preferably 0 ppm or less, but is not particularly limited. Here, the amount of hydrolyzable chlorine means that 1 g of epoxy resin as a sample is dissolved in 30 ml of dioxane to prepare 1N-KOH.
A value obtained by potentiometric titration after adding 5 ml of a methanol solution and refluxing for 30 minutes is used as a scale. The epoxy resin (A) can be synthesized by epoxidizing a resin obtained by reacting dihydroxynaphthalene and naphthol as raw materials with formaldehyde under an acid catalyst. The higher the proportion of dihydroxynaphthalene, the higher the glass transition temperature, It was found that the high temperature strength was high and the reflow crack resistance was also excellent. Further, in order to efficiently obtain the structure shown in (A), it is desirable to use 2,7-dihydroxynaphthalene and β-naphthol as raw materials.

【0006】本発明において用いられるエポキシ樹脂と
しては、上記(A)の構造式で示されるものの他に、電
子部品封止用エポキシ樹脂成形材料で一般に使用されて
いるものと組合わせて使用してもよい。それを例示すれ
ば、フェノールノボラック型エポキシ樹脂、オクソクレ
ゾールノボラック型エポキシ樹脂をはじめとするフェノ
ール類とアルデヒド類のノボラック樹脂をエポキシ化し
たもの、グリシジルアミン型エポキシ樹脂、及び脂環族
エポキシ樹脂などがあり、これらを適宜何種類でも併用
することができる。これらのエポキシ樹脂を併用する場
合、特に限定するものではないが、本発明の(A)エポ
キシ樹脂の配合比は、エポキシ樹脂全体の30重量%以
上が好ましく、さらには50重量%以上が好ましい。こ
の理由としては、30重量%未満では本発明の目的であ
る耐リフロー性に対して効果が少なく、特に有効な効果
を発揮するためには50重量%以上が必要となるためで
ある。さらに、本発明の(B)のフェノール類のノボラ
ック樹脂としては、フェノール、クレゾール、ナフトー
ル等とアルデヒド類の縮合および/または共縮合により
得られる樹脂などがある。本発明に用いられるエポキシ
樹脂と(B)のフェノール樹脂の当量比は、硬化性、耐
熱性等の点から0.8〜1.3の範囲が望ましい。
As the epoxy resin used in the present invention, in addition to the epoxy resin represented by the structural formula (A) above, it is used in combination with a resin generally used in epoxy resin molding materials for sealing electronic parts. Good. For example, phenol novolac type epoxy resin, epoxidized novolac resin of phenols and aldehydes including oxocresol novolac type epoxy resin, glycidyl amine type epoxy resin, and alicyclic epoxy resin Therefore, any number of these can be used in combination. When these epoxy resins are used in combination, there is no particular limitation, but the compounding ratio of the epoxy resin (A) of the present invention is preferably 30% by weight or more, and more preferably 50% by weight or more based on the whole epoxy resin. The reason for this is that if it is less than 30% by weight, the effect on the reflow resistance, which is the object of the present invention, is small, and 50% by weight or more is necessary for exhibiting a particularly effective effect. Further, examples of the phenol novolak resin (B) of the present invention include resins obtained by condensation and / or cocondensation of phenol, cresol, naphthol and the like with aldehydes. The equivalent ratio of the epoxy resin used in the present invention to the phenol resin (B) is preferably in the range of 0.8 to 1.3 from the viewpoint of curability, heat resistance and the like.

【0007】また、エポキシ樹脂とフェノール樹脂の硬
化反応を促進する硬化促進剤を使用することができる。
この硬化促進剤としては、例えば、1,8−ジアザビシ
クロ(5,4,0)ウンデセン−7、トリエチレンジア
ミン、ベンジルジメチルアミン、トリエタノールアミ
ン、ジメチルアミノエタノール、トリス(ジメチルアミ
ノメチル)フェノールなどの三級アミン類、2−メチル
イミダゾール、2−フェニルイミダゾール、2−フェニ
ル−4−メチルイミダゾール、2−ヘプタデシルイミダ
ゾールなどのイミダゾール類、トリブチルホスフィン、
メチルジフェニルホスフィン、トリフェニルホスフィ
ン、ジフェニルホスフィン、フェニルホスフィンなどの
有機ホスフィン類、テトラフェニルホスホニウム・テト
ラフェニルボレート、テトラフェニルホスホニウム・エ
チルトリフェニルボレート、テトラブチルホスホニウム
・テトラブチルボレートなどのテトラ置換ホスホニウム
・テトラ置換ボレート、2−エチル−4−メチルイミダ
ゾール・テトラフェニルボレート、N−メチルモルホリ
ン・テトラフェニルボレートなどのテトラフェニルボロ
ン塩などがある。
Further, a curing accelerator that accelerates the curing reaction between the epoxy resin and the phenol resin can be used.
Examples of the curing accelerator include 1,8-diazabicyclo (5,4,0) undecene-7, triethylenediamine, benzyldimethylamine, triethanolamine, dimethylaminoethanol, and tris (dimethylaminomethyl) phenol. Secondary amines, 2-methylimidazole, 2-phenylimidazole, 2-phenyl-4-methylimidazole, imidazoles such as 2-heptadecylimidazole, tributylphosphine,
Organic phosphines such as methyldiphenylphosphine, triphenylphosphine, diphenylphosphine, phenylphosphine, etc., tetra-substituted phosphonium tetra-, such as tetraphenylphosphonium tetraphenylborate, tetraphenylphosphonium ethyl triphenylborate, tetrabutylphosphonium tetrabutylborate, etc. There are tetraphenylboron salts such as substituted borates, 2-ethyl-4-methylimidazole tetraphenylborate, N-methylmorpholine tetraphenylborate and the like.

【0008】また、充填剤としては吸湿性低減及び強度
向上の観点から無機充填剤を用いることが必要である。
無機充填剤としては結晶シリカ、溶融シリカ、アルミ
ナ、ジルコン、珪酸カルシウム、炭酸カルシウム、炭化
珪素、窒化珪素、窒化ホウ素、ジルコニア、ジルコン、
フォステライト、ステアタイト、スピネル、ムライト、
チタニアなどの粉体、またはこれらを球形化したビーズ
などが挙げられ、1種類以上用いることができる。充填
剤の配合量としては同様の理由から、60容量%以上が
必要であり、さらには65容量%以上が好ましい。その
他の添加剤として高級脂肪酸、高級脂酸金属塩、エステ
ル系ワックスなどの離型剤、カーボンブラックなどの着
色剤、エポキシシラン、アミノシラン、ウレイドシラ
ン、ビニルシラン、アルキルシラン、有機チタネート、
アルミニウムアルコレートなどのカップリング剤及び難
燃剤などを用いることができる。以上のような原材料を
用いて成形材料を作製する一般的な方法としては、所定
の配合量の原材料をミキサー等によって充分混合した
後、ミキシングロール、押出機などによって混練し、冷
却、粉砕することによって成形材料を得ることができ
る。本発明で得られる成形材料を用いて電子部品を封止
する方法としては、低圧トランスファー成形法が最も一
般的であるが、インジェクション成形法、圧縮成形法に
よっても可能である。
Further, as the filler, it is necessary to use an inorganic filler from the viewpoint of reducing hygroscopicity and improving strength.
As the inorganic filler, crystalline silica, fused silica, alumina, zircon, calcium silicate, calcium carbonate, silicon carbide, silicon nitride, boron nitride, zirconia, zircon,
Fosterite, steatite, spinel, mullite,
Examples thereof include powders such as titania and beads obtained by making them spherical, and one or more types can be used. For the same reason, the compounding amount of the filler needs to be 60% by volume or more, and more preferably 65% by volume or more. Other additives include higher fatty acids, higher fatty acid metal salts, release agents such as ester waxes, colorants such as carbon black, epoxysilanes, aminosilanes, ureidosilanes, vinylsilanes, alkylsilanes, organic titanates,
A coupling agent such as aluminum alcoholate and a flame retardant can be used. As a general method for producing a molding material using the above raw materials, after thoroughly mixing a predetermined amount of raw materials with a mixer or the like, kneading with a mixing roll, an extruder, etc., cooling, and pulverizing A molding material can be obtained by A low-pressure transfer molding method is the most general method for sealing an electronic component using the molding material obtained in the present invention, but an injection molding method or a compression molding method is also possible.

【0009】[0009]

【作用】ICパッケージがリフロー時にうけるダメージ
は、ICの保管時に吸湿した水分がリフロー時に急激に
膨張することが原因であり、この結果、パッケージのク
ラック及び素子やリードフレームと樹脂界面の剥離を生
じる。従って、リフローに強い樹脂としては、吸水率が
低いこと、高温で強度が高いことが要求される。本発明
の主成分となるエポキシ樹脂は骨格の剛直性、疎水性に
優れたナフタレン骨格型樹脂であり、エポキシ基も多い
ため高温強度の高く、吸湿特性にも優れた組成物を得る
ことができたと推察できる。この効果により耐リフロー
クラック性が向上したと考えられる。
The damage that the IC package receives during reflow is caused by the moisture absorbed during storage of the IC rapidly expanding during reflow, resulting in cracks in the package and separation of the resin interface from the element or lead frame. .. Therefore, a resin that is resistant to reflow is required to have low water absorption and high strength at high temperatures. The epoxy resin which is the main component of the present invention is a naphthalene skeleton type resin having excellent skeleton rigidity and hydrophobicity, and since it has many epoxy groups, high temperature strength is high and a composition excellent in hygroscopic property can be obtained. Can be inferred. It is considered that this effect improved the reflow crack resistance.

【0010】[0010]

【実施例】以下実施例により本発明を説明するが、本発
明の範囲はこれらの実施例に限定されるものではない。
EXAMPLES The present invention is described below with reference to examples, but the scope of the present invention is not limited to these examples.

【実施例1】構造式がExample 1 The structural formula is

【化3】 で示されるエポキシ当量182のエポキシ樹脂80重量
部と水酸基当量106、軟化点83℃のフェノールノボ
ラック樹脂52重量部と、臭素比率50重量%、エポキ
シ当量375の臭素化ビスフェノールA型エポキシ樹脂
20重量部、トリフェニルホスフィン(2.5重量
部)、カルナバワックス(3重量部)、カーボンブラッ
ク(1重量部)、γ−グリシドキシプロピルトリメトキ
シシラン(4重量部)、石英ガラス粉(75重量%)を
配合し10インチ径の加熱ロールを使用して、混練温度
80〜90℃、混練時間7〜10分の条件で実施例1の
エポキシ樹脂成形材料を作製した。
[Chemical 3] 80 parts by weight of an epoxy resin having an epoxy equivalent of 182, 106 parts of a hydroxyl group, 52 parts by weight of a phenol novolac resin having a softening point of 83 ° C., 20 parts by weight of a brominated bisphenol A type epoxy resin having a bromine ratio of 50% by weight and an epoxy equivalent of 375. , Triphenylphosphine (2.5 parts by weight), carnauba wax (3 parts by weight), carbon black (1 part by weight), γ-glycidoxypropyltrimethoxysilane (4 parts by weight), quartz glass powder (75% by weight) ) Was mixed and a heating roll having a diameter of 10 inches was used to prepare the epoxy resin molding material of Example 1 under the conditions of a kneading temperature of 80 to 90 ° C. and a kneading time of 7 to 10 minutes.

【実施例2】実施例1のエポキシ樹脂を構造式がExample 2 The epoxy resin of Example 1 has the structural formula

【化4】 で示されるエポキシ当量160のエポキシ樹脂に置き換
え、フェノールノボラック樹脂の配合量を59重量部と
した以外は実施例1と同様に作製した。比較例は実施例
1のエポキシ樹脂をエポキシ当量200、軟化点73℃
のオクソクレゾールノボラック型エポキシ樹脂80重量
部に置き換え、フェノールノボラック樹脂の配合量を4
8重量部とした以外は実施例1と同様に作製した。
[Chemical 4] Was produced in the same manner as in Example 1 except that the epoxy resin having an epoxy equivalent of 160 was replaced with the epoxy resin and the compounding amount of the phenol novolac resin was 59 parts by weight. The comparative example uses the epoxy resin of Example 1 with an epoxy equivalent of 200 and a softening point of 73 ° C.
80 parts by weight of oxocresol novolac type epoxy resin, and the compounding amount of phenol novolac resin is 4
It was produced in the same manner as in Example 1 except that 8 parts by weight was used.

【0011】実施例1、2及び比較例の特性を表1に、
試験法の詳細を表2に示す。本発明の効果を明確にする
ために、評価用ICを用いたリフロー時の耐クラック性
及びリフロー後の耐湿性の結果を示す。耐クラック性評
価に用いたICは外形が19×14×2.0(mm)のフ
ラットパッケージであり、8×10×0.4(mm)の素
子を搭載した80ピン、42アロイリードのものであ
る。試験条件は85℃、85%RHで所定時間加湿した
後、215℃のベーパーフェーズリフロー炉で90秒加
熱するものである。評価は外観を顕微鏡観察し、パッケ
ージクラックの有無を判定することにより行った。なお
ICパッケージの成形は180℃、90秒、70kgf/cm
2 の条件で行い、成形後180℃、5時間の後硬化を行
った。表3にリフロー時の耐クラック試験の結果を示
す。実施例は比較例と比べ、Tg、高温強度に優れ、こ
の結果良好なリフロー性を示した。
The characteristics of Examples 1 and 2 and Comparative Example are shown in Table 1.
Details of the test method are shown in Table 2. In order to clarify the effects of the present invention, the results of crack resistance during reflow using the evaluation IC and moisture resistance after reflow are shown. The IC used for the crack resistance evaluation is a flat package with an outer shape of 19 × 14 × 2.0 (mm), and an 80-pin, 42-alloy lead with an 8 × 10 × 0.4 (mm) element mounted. Is. The test conditions are such that after humidifying at 85 ° C. and 85% RH for a predetermined time, it is heated in a vapor phase reflow furnace at 215 ° C. for 90 seconds. The evaluation was performed by observing the appearance with a microscope and determining the presence or absence of package cracks. Molding of IC package is 180 ℃, 90 seconds, 70kgf / cm
The molding was performed under the conditions of 2 , and after molding, post-curing was performed at 180 ° C. for 5 hours. Table 3 shows the results of the crack resistance test during reflow. The examples were superior in Tg and high temperature strength to the comparative examples, and as a result, good reflow properties were exhibited.

【0012】[0012]

【表1】 [Table 1]

【表2】 [Table 2]

【表3】 [Table 3]

【0013】[0013]

【発明の効果】本発明によって得られたエポキシ樹脂成
形材料はリフロー時の耐クラック性及びリフロー後の耐
湿性が従来のものと比べ大きく改善できる。電子部品の
分野、特にFP(フラットパッケージ)、SOP(スモ
ールアウトラインパッケージ)などのICではパッケー
ジが薄形、小形になり、素子の大型化と相俟って耐パッ
ケージクラック性が強く要求されており、これらの製品
へ広く適用でき、その工業的価値は大きい。
The epoxy resin molding material obtained according to the present invention can greatly improve the crack resistance during reflow and the moisture resistance after reflow as compared with the conventional ones. In the field of electronic parts, especially in ICs such as FP (flat package) and SOP (small outline package), the package is thin and small, and in combination with the increase in size of the device, package crack resistance is strongly required. , Can be widely applied to these products, and its industrial value is great.

フロントページの続き (51)Int.Cl.5 識別記号 庁内整理番号 FI 技術表示箇所 C08L 63/00 NKT 8830−4J Continuation of front page (51) Int.Cl. 5 Identification code Office reference number FI technical display area C08L 63/00 NKT 8830-4J

Claims (1)

【特許請求の範囲】[Claims] 【請求項1】 主たる成分として(A)構造式が 【化1】 で示されるエポキシ樹脂 (B)フェノール類のノボラック樹脂及び (C)60体積%以上の無機充填剤 を含有することを特徴とする電子部品封止用エポキシ樹
脂成形材料。
1. A structural formula of (A) as a main component is An epoxy resin molding material for electronic component encapsulation, comprising: (B) a phenolic novolak resin and (C) 60% by volume or more of an inorganic filler.
JP3343321A 1991-12-25 1991-12-25 Epoxy resin molding material for sealing electronic parts and IC package using the same Expired - Lifetime JP3049898B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP3343321A JP3049898B2 (en) 1991-12-25 1991-12-25 Epoxy resin molding material for sealing electronic parts and IC package using the same

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP3343321A JP3049898B2 (en) 1991-12-25 1991-12-25 Epoxy resin molding material for sealing electronic parts and IC package using the same

Publications (2)

Publication Number Publication Date
JPH05175370A true JPH05175370A (en) 1993-07-13
JP3049898B2 JP3049898B2 (en) 2000-06-05

Family

ID=18360621

Family Applications (1)

Application Number Title Priority Date Filing Date
JP3343321A Expired - Lifetime JP3049898B2 (en) 1991-12-25 1991-12-25 Epoxy resin molding material for sealing electronic parts and IC package using the same

Country Status (1)

Country Link
JP (1) JP3049898B2 (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI415230B (en) * 2005-04-25 2013-11-11 Shinetsu Chemical Co Epoxy resin composition for semiconductor sealing and semiconductor device

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI415230B (en) * 2005-04-25 2013-11-11 Shinetsu Chemical Co Epoxy resin composition for semiconductor sealing and semiconductor device

Also Published As

Publication number Publication date
JP3049898B2 (en) 2000-06-05

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