JPH09235452A - Epoxy resin composition for semiconductor sealing - Google Patents

Abstract

PROBLEM TO BE SOLVED: To obtain a sealing composition improved in soldering crack resistance (soldering-heat resistance) and reliability of humidity resistance, excellent in molding flow and curability, and can give moldings free from voids and burrs. SOLUTION: This composition comprises an epoxy resin (A), a curing agent (B), an inorganic filler (C), and a silane coupling agent (D). The silane coupling agent (D) comprises 10-95wt.% silane coupling agent (D-1) having organic groups to which epoxy groups are bonded and/or silane coupling agent having organic groups to which sec. amino groups are bonded and 90-10wt.% silane coupling agent (D-2) other than D-1, and the inorganic filler (C) is used in an amount of 85-95wt.% based on the whole composition.

Description

Detailed Description of the Invention

[0001]

The present invention relates to an epoxy resin composition for semiconductor encapsulation used for encapsulating a semiconductor device. More specifically, an epoxy resin composition for semiconductor encapsulation in which cracks are prevented from occurring in the encapsulating resin in a soldering step when mounting the resin-encapsulated semiconductor device,
In particular, the present invention relates to an epoxy resin composition for semiconductor encapsulation which is excellent in moisture resistance reliability and moldability (fluidity, curing rate, filling property).

[0002]

2. Description of the Related Art Epoxy resins are excellent in heat resistance, moisture resistance, electrical properties and adhesiveness, and can be imparted with various properties by compounding and prescription. Therefore, they are used as industrial materials such as paints, adhesives and electrical insulating materials. It's being used.

For example, as a method of sealing an electronic circuit component such as a semiconductor device, a hermetic seal made of metal or ceramics and a resin seal made of phenol resin, silicone resin, epoxy resin or the like have been conventionally proposed. In this regard, resin sealing with an epoxy resin is mainly used in terms of balance between economy, productivity, and physical properties.

On the other hand, in recent years, the density and automation of component mounting on a printed circuit board have been advanced, and instead of the conventional "insertion mounting method" in which lead pins are inserted into holes in the board, components are soldered on the surface of the board. “Surface mounting method” has become popular.

[0005] Along with this, the package is also a conventional DIP
(Dual in-line package) to thin FPP (flat plastic package) suitable for high-density mounting and surface mounting.

[0006] With the shift to the surface mounting method, the soldering process, which has not been a problem so far, has become a serious problem.

That is, in the conventional pin insertion mounting method,
In the soldering process, the leads are only partially heated, but in the surface mounting method, the entire package is immersed in a heating medium and heated.

As a soldering method in this surface mounting method, a solder bath immersion, heating by a saturated vapor of an inert gas (a vapor phase method), an infrared reflow method, and the like are used.
Since the package is heated to a high temperature of 270 ° C., in a package sealed with a conventional sealing resin, cracks may occur in the resin portion during soldering, or peeling may occur between the chip and the resin. Thus, there is a problem that the reliability is lowered and the product cannot be used as a product.

The occurrence of cracks in the soldering process
It is said that the moisture absorbed between post-curing and the mounting process explosively turns into steam and expands during soldering and heating.As a countermeasure, the post-cured package must be completely dried. A method of shipping in a sealed container is used.

[0010] However, the method of enclosing the dry package in a container has disadvantages that the manufacturing process and the handling of the product are complicated and the product price is high.

As a method of sealing with an epoxy resin, a composition in which a curing agent and an inorganic filler are mixed with an epoxy resin is used, a semiconductor element is set in a mold, and sealed with a low-pressure transfer molding machine. The method is commonly used.

The molding machine used is also changing from a conventional conventional system to a multi-plunger system in accordance with the recent trend toward thinner and smaller packages and automatic molding. Here, the conventional method is to mold a large number of devices in one pot at a time and is excellent in moldability, whereas the multi-plunger method is a method in which 1-2 devices are basically molded in one pot. Although it can be automated, it is inferior to the conventional method in terms of productivity.

However, along with the shift of the molding method, the required characteristics of the moldability of the resin composition are becoming more severe. Specifically, the demand for thinner and smaller packages requires more fluidity than before, and from the viewpoint of automation and productivity, it has excellent curability, mold release properties and low flash during molding. Gender has become quite demanding.

Further, when the resin-sealed semiconductor device is left in a high-temperature and high-humidity environment with the miniaturization of the aluminum wiring in accordance with the high integration of the device, the sealing resin itself or the sealing resin and the lead frame are removed. Higher performance has also been required for the performance of preventing breakdown of the semiconductor due to the intrusion of moisture through the interface with the semiconductor, that is, the humidity resistance reliability.

Based on such circumstances, various improvements of epoxy resin compositions for semiconductor encapsulation have been studied so far. For example, a method of adding an epoxysilane coupling agent for the purpose of improving reliability in moisture resistance (Japanese Patent Publication No. 62-1764
No. 0), a method of adding an aminosilane coupling agent having a primary amino group (JP-A-57-15575).
3) and a method of adding a ureidosilane-based coupling agent (Japanese Patent Laid-Open No. 63-110212).

For the purpose of improving the solder crack resistance of the epoxy resin composition for semiconductor encapsulation, a method using a biphenyl type epoxy resin (Japanese Patent Laid-Open No. 63-25141).
No. 9) has been proposed.

However, in order to improve the moisture resistance reliability, in the method of adding the epoxysilane coupling agent, the aminosilane coupling agent and the ureidosilane coupling agent, the moisture resistance reliability by the addition of these silane coupling agents is increased. Not only the effect of improving the heat resistance and solder heat resistance is still insufficient, but also the effect of improving the curability, fluidity and moldability such as burrs and voids is not satisfactory.

Further, in the method using a biphenyl type epoxy resin, although the solder crack resistance is improved, it is still not at a satisfactory level, and the curability and burrs at the time of molding are poor, and the productivity is lowered, or the flowability is deteriorated. He still had problems in terms of sex and voids.

[0019]

DISCLOSURE OF THE INVENTION The present invention has been achieved as a result of studying to solve the problems of the above-mentioned conventional resin composition for semiconductor encapsulation.

Therefore, the problems to be solved by the present invention include reliability such as solder crack resistance and moisture resistance reliability.
Another object of the present invention is to provide a resin composition for semiconductor encapsulation, which has excellent moldability such as fluidity, curability, voids and burrs during molding.

[0021]

In order to achieve the above object, the present invention has the following arrangement. A first invention is an epoxy resin composition containing an epoxy resin (A), a curing agent (B), an inorganic filler (C) and a silane coupling agent (D), wherein the silane coupling agent is (D) is (D-1) a silane coupling agent having an organic group to which an epoxy group is bonded and / or a silane coupling agent having an organic group to which all secondary amino groups are bonded 10 to 90% by weight , And (D-2) D
Silane coupling agents other than those defined in -1 90-
The inorganic filler (C) comprises 10% by weight.
The epoxy resin composition for semiconductor encapsulation is characterized in that the compounding ratio of is 85 to 95% by weight based on the total composition. "
As a second invention, there is provided an "epoxy resin composition comprising an epoxy resin (A), a curing agent (B), an inorganic filler (C) and a silane coupling agent (D), which comprises silane coupling. Agent (D) is a silane coupling agent (D-1 ') having an organic group to which all amino groups are bonded and silane coupling agent (D-1 ") having an organic group to which an epoxy group is bonded. The epoxy resin composition for semiconductor encapsulation, wherein the compounding ratio of the filler (C) is 85 to 95% by weight based on the total resin composition. ".

According to the present invention, the solder crack resistance and the moisture resistance reliability can be improved and the fluidity at the time of molding can be improved only when a specific silane coupling agent is mixed and used in a specific ratio. It is possible to obtain a resin composition for encapsulating a semiconductor, which has excellent properties and curability, and can give a molded product having an excellent appearance without the occurrence of voids or burrs.

[0023]

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS The configuration of the present invention will be described below in detail.
In the present invention, “weight” means “mass”.
Unless otherwise indicated, the following description is common to the first and second inventions.

The epoxy resin (A) used in the present invention is 1
It has two or more epoxy groups in the molecule and is not particularly limited. Specific examples thereof include cresol novolac type epoxy resin, phenol novolac type epoxy resin, biphenyl type epoxy resin, bisphenol A type epoxy resin, bisphenol. Examples thereof include F-type epoxy resin, linear aliphatic epoxy resin, alicyclic epoxy resin, heterocyclic epoxy resin, spiro ring-containing epoxy resin and halogenated epoxy resin.

Among these epoxy resins (A), those particularly preferably used in the present invention are biphenyl type epoxy resins having a skeleton represented by the following general formula (I) in view of excellent solder heat resistance. Is contained as an essential component.

[0026]

Embedded image (However, R1 to R8 in the formula are a hydrogen atom, a carbon number 1 to
4 represents an alkyl group or a halogen atom).

The epoxy resin (A) preferably contains the biphenyl type epoxy resin having the skeleton represented by the above general formula (I) in an amount of 50% by weight or more, particularly 70% by weight or more.

A preferred specific example of the epoxy resin skeleton represented by the above formula (I) is 4,4'-bis (2,3-).
Epoxypropoxy) biphenyl, 4,4'-bis (2,3-epoxypropoxy) -3,3 ', 5,5'
Tetramethylbiphenyl, 4,4'-bis (2,3-epoxypropoxy) -3,3 ', 5,5'-tetramethyl-2-chlorobiphenyl, 4,4'-bis (2,3-
Epoxypropoxy) -3,3 ', 5,5'-tetramethyl-2-bromobiphenyl, 4,4'-bis (2,3
-Epoxypropoxy) -3,3 ', 5,5'-tetraethylbiphenyl, 4,4'-bis (2,3-epoxypropoxy) -3,3', 5,5'-tetrabutylbiphenyl, 4,4 '-Bis (2,3-epoxypropoxy) biphenyl and 4,4'-bis (2,3-epoxypropoxy) -3,3', 5,5'-tetramethylbiphenyl, etc. , Or even when used in a mixed system.

In the present invention, the epoxy resin (A)
Is usually 3 to 15% by weight, preferably 3 to 10% by weight.
% By weight. 3% by weight of epoxy resin (A)
If it is less than 15%, the moldability and adhesiveness will be insufficient, and if it exceeds 15% by weight, the coefficient of linear expansion will increase, and it tends to be difficult to reduce the stress.

The curing agent (B) used in the present invention is not particularly limited as long as it reacts with the epoxy resin (A) and is cured, and specific examples thereof include, for example, phenol novolac resin and cresol novolac. Resin, phenol p-xylylene copolymer represented by the following formula (II), various novolac resins synthesized from bisphenol A and resorcin, various polyphenol compounds such as polyvinylphenol, maleic anhydride, phthalic anhydride, pyromellitic anhydride Examples thereof include acid anhydrides such as acids, and aromatic diamines such as metaphenylenediamine, diaminodiphenylmethane and diaminodiphenylsulfone.

[Chemical 6] (However, R in the formula may be the same or different and each represents a hydrogen atom, an alkyl group having 1 to 4 carbon atoms, or a halogen atom. M represents an integer of 0 or more.) Curing of the epoxy resin composition As the agent, phenol novolac resin, cresol novolac resin and phenol p-xylylene copolymer are preferably used from the viewpoint of heat resistance, moisture resistance and storage stability, and two or more curing agents may be used in combination depending on the application. . From the viewpoint of the fluidity of the sealant, the melt viscosity of the curing agent is 6 poise (6 Pa · s) or less at ICI (50 ° C.), and 4 poise (4 Pa · s) or less.
Below, 2 poise (2 Pa · s) or less is preferably used.

In the present invention, the content of the curing agent (B) is usually 2 to 15% by weight, preferably 2 to 10% by weight, more preferably 2 to 8% by weight.

Further, the compounding ratio of the epoxy resin (A) and the curing agent (B) is such that the chemical equivalent ratio of the curing agent (B) to the epoxy resin (A) is 0. It is preferably in the range of 5 to 1.6, particularly 0.8 to 1.3.

Further, the epoxy resin composition for semiconductor encapsulation of the present invention may contain a curing accelerator for promoting the reaction between the epoxy resin (A) and the curing agent (B).

The curing accelerator is not particularly limited as long as it accelerates the curing reaction, and specific examples thereof include 2-methylimidazole, 2,4-dimethylimidazole and 2
Imidazole compounds such as -ethyl-4-methylimidazole, 2-phenylimidazole, 2-phenyl-4-methylimidazole and 2-heptadecylimidazole, triethylamine, benzyldimethylamine, α
Tertiary amine compounds such as -methylbenzyldimethylamine, 2- (dimethylaminomethyl) phenol, 2,4,6-tris (dimethylaminomethyl) phenol and 1,8-diazabicyclo (5,4,0) undecene-7 , Zirconium tetramethoxide, zirconium tetrapropoxide, organometallic compounds such as tetrakis (acetylacetonato) zirconium and tri (acetylacetonato) aluminum, and triphenylphosphine, trimethylphosphine, triethylphosphine,
Organic phosphine compounds such as tributylphosphine, tri (p-methylphenyl) phosphine, and tri (nonylphenyl) phosphine are included.

Among these curing accelerators, organic phosphine compounds are preferable, and triphenylphosphine is particularly preferable, from the viewpoint of moisture resistance reliability.

Two or more kinds of these curing accelerators may be used in combination depending on the use, and the addition amount thereof is in the range of 0.1 to 10 parts by weight with respect to 100 parts by weight of the epoxy resin (A). Is preferred.

Examples of the inorganic filler (C) used in the present invention include metals such as fused silica, crystalline silica, calcium carbonate, magnesium carbonate, alumina, magnesia, clay, talc, calcium silicate, titanium oxide and antimony oxide. Examples thereof include oxides, asbestos, glass fibers, and glass spheres. Among them, amorphous silica is preferably used because it has a large effect of lowering the linear expansion coefficient and is effective for lowering stress. Examples of the amorphous silica include fused silica produced by fusing quartz, and crushed or spherical silica is used.

The fused silica as used herein generally means an amorphous silica having a true specific gravity of 2.3 or less. In the production of the fused silica, it is not always necessary to go through a molten state, and any production method can be used. For example, it can be produced by a method of melting crystalline silica or a method of synthesizing from various raw materials.

More preferably, the inorganic filler (C) is 20 to 95% by weight of spherical silica having a particle diameter of 0.1 to 3 μm and spherical silica 5 having a particle diameter of 3 to 50 μm in the inorganic filler (C).
It is preferable that the epoxy resin composition for semiconductor encapsulation is excellent in fluidity and solder crack resistance.

The compounding ratio of the inorganic filler (C) should be in the range of 85 to 95% by weight of the whole composition in consideration of the moldability and low stress of the obtained epoxy resin composition for semiconductor encapsulation. Is preferred.

Next, the silane coupling agent (D) used in the present invention means a hydrolyzable group such as an alkoxy group, a halogen atom and an amino group, and an organic group directly bonded to a silicon atom, and a partial hydrolysis thereof. Decomposition condensates are commonly used. As the hydrolyzable group, an alkoxy group, in particular, a methoxy group and an ethoxy group are preferably used.
As the organic group, a hydrocarbon group or a hydrocarbon group substituted with a nitrogen atom, an oxygen atom, a halogen atom, a sulfur atom or the like is used, and a hydrocarbon group substituted with the above atom is preferably used.

The feature of the silane coupling agent of the first invention is that (D-1) "a silane coupling agent having an organic group to which an epoxy group is bonded and / or an organic group to which all secondary amino groups are bonded. Group-containing silane coupling agent "(the sum of the above two types of silane coupling agents) 1
0 to 90% by weight, and 90 to 10% by weight of a silane coupling agent (D-2) other than those defined in D-1. In other words, the silane coupling agent (D) is "a silane coupling agent having an organic group to which an epoxy group is bonded is an essential component, and not all the essential components but all secondary amino groups are bonded. The sum with the silane coupling agent having an organic group,
10 to 90% by weight based on the silane coupling agent (D) "or" a silane coupling agent having an organic group to which all secondary amino groups are bonded is an essential component, and is an optional component rather than an essential component. The sum with the silane coupling agent having an organic group to which an epoxy group is bonded is 10 to 90% by weight based on the silane coupling agent (D). Further, the mixing ratio of (D-1) and (D-2) is more preferably in the range of 60/40 to 90/10 by weight ratio, and more preferably the silane coupling agent (D-1) and (D-).
When any one of 2) is used alone, the effect of preventing cracks in the soldering process and the fluidity, curability,
If neither the effect of improving the moldability such as voids or burrs is exhibited, and if neither of them classified into (D-1) is used, the effect of preventing cracks in the soldering process and the curability, molding of burrs, etc. Although the effect of improving the property is exhibited to some extent, the effect is not sufficient, and the filling property, particularly the moldability such as the occurrence of a large number of voids, is significantly reduced. In particular, it is preferable to use a silane coupling agent having an organic group to which all amino groups are secondary as an essential component.

In the second aspect of the invention, the silane coupling agent (D) is bound to the silane coupling agent (D-1 ') having an organic group to which all secondary amino groups are bound, and to the epoxy group. It contains a silane coupling agent (D-1 ″) having an organic group. Preferably, the compounding ratio of the silane coupling agent (D) is 0.5 to 2% by weight with respect to the inorganic filler (C). % Is preferable from the viewpoint of fluidity and filling property, and a silane coupling agent (D-1) having an organic group to which an epoxy group is bonded.
And the proportion of the silane coupling agent (D-1 ′) having an organic group in which all are secondary amino groups are 70/30 to 1/99 by weight ratio, and further 60/40 to 2/98.
Is preferable from the viewpoint of moisture resistance reliability, filling property, and curability.

The following is a return to the description common to the first and second inventions.

The mixture of the silane coupling agent (D) may be added individually, or may be mixed with other components contained in the resin composition in advance, or may be used by reacting.

Here, examples of the silane coupling agent having an organic group to which an epoxy group is bonded include the following. γ-glycidoxypropyltrimethoxysilane, γ
-Glycidoxypropylmethyldimethoxysisilane, γ
-(2,3-epoxycyclohexyl) propyltrimethoxysilane.

Further, as a silane coupling agent having an organic group to which all amino groups are secondary, γ-
(N-phenylamino) propyltrimethoxysilane,
γ- (N-phenylamino) propylmethyldimethoxysilane, γ- (N-methylamino) propyltrimethoxysilane, γ- (N-methylaminopropyl) methyldimethoxysilane, γ- (N-ethylamino) propyltrimethoxy Examples thereof include silane, γ- (N-ethylamino) propylmethyldimethoxysilane, and the like.

Among the silane coupling agents defined in D-1, from the viewpoint of moisture resistance reliability and fluidity, in particular, γ-glycidoxypropyltrimethoxysilane and γ- (N-ethylamino) propylmethyltri Methoxysilane is preferably used.

As the silane coupling agent (D-2) other than the silane coupling agent (D-1), an organic group bonded to a silicon atom is a hydrocarbon group, a primary amino group, a tertiary amino group, Examples thereof include hydrocarbon groups having a (meth) acryloyl group, a mercapto group and the like.
Specific examples thereof include γ-methacryloxypropyltrimethoxysilane, γ-methacryloxypropylmethyldimethoxysilane, γ-mercaptopropyltrimethoxysilane, γ-mercaptopropylmethyldimethoxysilane, N-β- (aminoethyl ) -Γ-aminopropyltrimethoxysilane, N-β- (aminoethyl) -γ-aminopropylmethyldimethoxysilane, N-β- (aminoethyl) -γ-aminopropyltriethylsilane, γ
-Aminopropyltriethoxysilane, γ-aminopropylmethyldiethoxysilane, γ-aminopropyltrimethoxysilane, γ-aminopropylmethyldimethoxysilane, γ- (N, N-dimethylamino) propyltrimethoxysilane and the like. . Of these,
From the viewpoint of moisture resistance reliability, a silane coupling agent in which an organic group having a primary amino group is bonded to a silicon atom is preferably used, and examples thereof include γ-aminopropyltriethoxysilane and γ-aminopropyltrimethoxy. Silane is exemplified.

The amount of the silane coupling agent (D) added is preferably 0.5 to 6% by weight, more preferably 0.7 to 2% by weight, based on the inorganic filler (C). On the other hand, the compounding amount of the silane coupling agent (D) is 0.2 to
Preferably it is 10% by weight.

A flame retardant such as a halogen compound such as a halogenated epoxy resin and a phosphorus compound, and various flame retardant auxiliaries such as antimony trioxide can also be blended. When the amount of the filler (C) added exceeds 88% by weight, each of these flame retardants contains halogen atoms and antimony atoms in the resin composition from the viewpoint of easy disposal of unnecessary substances generated from the resin composition. It is preferably 0.2% by weight or less, and substantially not blended.

The epoxy resin composition of the present invention may further optionally contain various additives listed below. Various colorants and pigments such as carbon black and iron oxide, silicone rubber, olefinic copolymers, modified nitrile rubber, modified polybutadiene rubber and other elastomers, silicone oil, polyethylene and other thermoplastic resins, long chain fatty acids, Various release agents such as metal salts of long-chain fatty acids, esters of long-chain fatty acids, amides of long-chain fatty acids and paraffin wax, ion scavengers such as hydrotalcites, and crosslinking agents such as organic peroxides.

When the silane coupling agent (D), which is a feature of the present invention, is blended, the following reaction may occur in the composition, but the silane coupling agent (D) may be present in the composition. The effect of the present invention is exerted even if it is chemically converted. Hydrolytic condensation due to the hydrolyzable groups of the silane coupling agent. Condensation reaction between the hydrolyzable group of the silane coupling agent and the surface layer of the inorganic filler. Reaction between the epoxy group of the silane coupling agent and the curing agent (B). Reaction of amino group of silane coupling agent with epoxy resin (A).
Reaction of the epoxy groups of the silane coupling agent with other functional groups (eg amino groups) of the silane coupling agent.
Reaction of amino groups of silane coupling agent with other functional groups of silane coupling agent. Reaction of silane coupling agent with optionally added silicone.

The epoxy resin composition of the present invention is preferably melt-kneaded, for example, melt-kneaded using a known kneading method such as a Banbury mixer, a kneader, a roll, a single-screw or twin-screw extruder and a cokneader. Manufactured by.

The resin composition for semiconductor encapsulation of the present invention thus constituted has improved solder crack resistance and moisture resistance reliability, is excellent in fluidity and curability during molding, and is free from voids and burrs. A semiconductor encapsulation device having an excellent appearance can be provided.

[0056]

EXAMPLES The present invention will be described in more detail below with reference to examples.

[Examples 1 to 12 and Comparative Examples 1 to 8] [Examples 13 to 20 and Comparative Examples 9 to 13] The following epoxy resin, curing agent, inorganic filler, silane coupling agent and other additives were added. , Respectively below and Table 1 and Table 2
Dry blending was carried out by a mixer in the ratio shown in. A. Epoxy resin I ... Orthocresol novolak type epoxy resin with epoxy equivalent of 200 ... 4,4'-bis (2,3-epoxypropoxy)
-3,3 ', 5,5'-tetramethylbiphenyl B.I. Curing agent Phenol p-xylylene copolymer represented by the following formula (II) (where m is 0.3 in number average)

Embedded image C. Inorganic filler I: Spherical silica with an average particle size of 1 μm / Average particle size of 6 μ
m crushed silica / spherical silica with an average particle size of 30 μm (1
(0/30/60 weight ratio) A ratio of spherical silica having a particle diameter of 0.1 to 3 μm / 3 to 50 μm in the inorganic filler (20/40% by weight) II ... Spherical silica having an average particle diameter of 1 μm / average Particle size 6μ
m crushed silica / spherical silica with an average particle size of 12 μm (1
(0/30/60 weight ratio) A ratio of spherical silica having a particle size of 0.1 to 3 μm / 3 to 50 μm in the inorganic filler (30/35% by weight) III: average particle diameter of 1 μm spherical silica / average Particle size 1
Mixture of 2 μm spherical silica (10/90 weight ratio) Ratio of spherical silica having a particle size of 0.1 to 3 μm / 3 to 50 μm in the inorganic filler (40/55 wt%) D. Silane coupling agent I ... N-phenylaminopropyltrimethoxysilane II. .Gamma.-glycidoxypropyltrimethoxysilane III..gamma.-aminopropyltrimethoxysilane E. Flame retardant ... Brominated bisphenol A type epoxy resin having an epoxy equivalent of 400 and a bromine content of 49% (see [Example 1
-12, Comparative Examples 1-8] Amount added: 0.8% by weight each) F. Flame-retardant aid ... Antimony trioxide ([Examples 1 to 1
2, Comparative Examples 1 to 8] Addition amount: 1.0% by weight each) G. Other additives Curing accelerator: Triphenylphosphine (Tables 1 and 2)
Release agent: Carnauba wax (added amount: 0.
3% by weight) Colorant ... Carbon black (added amount: 0.
3% by weight).

[0058]

[Table 1]

[0059]

[Table 2]

Each of these mixtures was heated at a roll temperature of 90 ° C.
After heating and kneading for 5 minutes using the mixing roll of No. 3, and cooling and pulverizing, 10 kinds of epoxy resin compositions for semiconductor encapsulation were manufactured.

Using each of these encapsulating resin compositions, molding was carried out by a low-pressure transfer molding method under the conditions of a molding temperature of 175 ° C., a molding time of 2 minutes and a transfer pressure of 70 kg / cm ² , and further 175 ° C. × 5 hours. Tables 2 and 4 show the results obtained by post-curing under the conditions and measuring the physical properties of each composition by the following physical property measuring methods.

Spiral flow: Measured at a molding speed of 25 m / sec at 175 ° C. using an EMMI mold for evaluation.

Solder heat resistance: Chip size 9 × 9 mm mounted with a simulated semiconductor element having aluminum vapor-deposited on the surface
Molded 20 pieces of 160 pin QFP (28 x 28 x
The thickness was set to 3.4 (thickness) mm and post-cured to obtain a semiconductor device. 72 hours at 85 ° C / 85% RH,
After moisturizing for 120 hours, heat treatment was performed in an IR reflow furnace having a maximum temperature of 240 ° C., and the number of external cracks was examined. Moisture resistance reliability: QF after evaluation of solder heat resistance for 72 hours of humidification
P under the PCT condition of 121 ° C./100% RH,
Cumulative failure rate of 50%, with broken aluminum wiring as a failure
The time was calculated as the life. Fillability: 160pin QFP used for solder heat resistance test
After molding, was observed visually and using a microscope to observe the presence or absence of unfilling and surface voids. Burrs: Molded under a condition of 175 ° C. × 90 seconds using a burr measuring mold by a low pressure transfer molding method, and the length of burrs generated in a gap having a width of 5 μm was measured. Curability: A disk having a diameter of 5 cm was molded by a low pressure transfer molding method, treated at 175 ° C., and the curing time until the hardness (Shore D) exceeds 70 was measured.

[0064]

[Table 3]

[0065]

[Table 4]

As is clear from the results shown in Table 3, the epoxy resin composition for semiconductor encapsulation of the first invention (Examples 1 to 12).
Has excellent solder heat resistance and moisture resistance reliability, as well as excellent moldability such as filling properties, burrs, and curability, and has extremely good productivity.

On the other hand, in Comparative Examples 1 to 3, which are the use of silane coupling agents outside the scope of the present invention, not only the solder heat resistance and moisture resistance reliability are inferior, but also the moldability such as filling properties, burrs and curability is improved. Is extremely low.

Further, in Comparative Example 8 in which the amount of the inorganic filler is 85% by weight or less, the solder heat resistance and the moisture resistance reliability are inferior.

As is clear from the results shown in Table 4, the epoxy resin composition for semiconductor encapsulation of the second invention (Examples 13 to 2)
0) is not only excellent in product characteristics such as solder heat resistance and moisture resistance reliability but also excellent in productivity (fillability, curability, burr, spiral flow) and is industrially effective.

On the other hand, in Comparative Examples 2 to 4, since the specific silane coupling agent was not used in the specific mixing ratio,
Not only is solder heat resistance, filling property, curability, and burr poor, but also Comparative Examples 3 and 4 are poor in moisture resistance reliability.

In Comparative Example 8 in which the amount of the inorganic filler is less than 85% by weight, the solder heat resistance and the moisture resistance reliability are poor.

Further, in the comparative example 5 in which the amount of the silane coupling agent added was not appropriate, the molding was impossible, and in the comparative example 6, a large number of voids were generated and the filling property was deteriorated.

[0073]

As described above, the epoxy resin composition for semiconductor encapsulation of the present invention can improve the solder crack resistance (solder heat resistance) and the moisture resistance reliability, and moreover, the fluidity during molding. In addition, it is possible to provide a molded product having excellent curability and an appearance that is free of voids and burrs with excellent productivity.

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Claims (18)

[Claims] 1. An epoxy resin (A), a curing agent (B),
An epoxy resin composition containing an inorganic filler (C) and a silane coupling agent (D), wherein the silane coupling agent (D) comprises (D-1) an organic group having an epoxy group bonded thereto. Silane coupling agent and / or
Or a silane coupling agent having an organic group to which amino groups are all secondary, 10 to 90% by weight, and (D-2) a silane coupling agent other than those defined in D-1 90 to 10% by weight And the compounding ratio of the inorganic filler (C) is 85 with respect to the total composition.
An epoxy resin composition for encapsulating a semiconductor, wherein the content is about 95% by weight. 2. A silane coupling agent having an organic group to which an epoxy group is bonded as an essential component, and a silane coupling agent having an organic group to which all secondary amino groups are optionally blended. Is 10 to 90% by weight with respect to the silane coupling agent (D), the epoxy resin composition for semiconductor encapsulation according to claim 1. 3. A silane coupling agent having an amino group-bonded organic group, all of which is secondary, as an essential component, and optionally a silane coupling agent having an epoxy group-bonded organic group. Is 10 to 90% by weight with respect to the silane coupling agent (D), the epoxy resin composition for semiconductor encapsulation according to claim 1. 4. The semiconductor encapsulation according to claim 1, wherein the silane coupling agent (D-2) contains a silane coupling agent having an organic group to which a primary amino group is bound as an essential component. Epoxy resin composition. 5. The epoxy resin composition for semiconductor encapsulation according to claim 1, wherein the compounding ratio of the epoxy resin (A) is 3 to 15% by weight based on the total composition. . 6. The compounding amount of the silane coupling agent (D) is 0.2 to 10% by weight based on the composition.
5. The resin composition for semiconductor encapsulation according to any one of to 5. 7. The epoxy resin (A) has the following formula (I):
The epoxy resin composition for semiconductor encapsulation according to any one of claims 1 to 6, comprising at least one kind of epoxy resin having a structure shown in. Embedded image (However, R1 to R8 in the formula are each a hydrogen atom or a carbon number 1 to
4 represents an alkyl group or a halogen atom. ) 8. The inorganic filler (C) is spherical silica 20-9 having a particle size of 0.1-3 μm in the inorganic filler (C).
The epoxy resin composition for semiconductor encapsulation according to any one of claims 1 to 7, comprising 5 wt% and 5 to 80 wt% of spherical silica having a particle diameter of 3 to 50 µm. 9. The curing agent (B) contains at least one phenol-p-xylylene copolymer having a structure represented by the following formula (II).
The epoxy resin composition for semiconductor encapsulation according to any one of claims. Embedded image (However, R in the formula may be the same or different and each represents a hydrogen atom, an alkyl group having 1 to 4 carbon atoms, or a halogen atom. M represents an integer of 0 or more.) 10. An epoxy resin (A), a curing agent (B),
An epoxy resin composition containing an inorganic filler (C) and a silane coupling agent (D), wherein the silane coupling agent (D) comprises an organic group to which all secondary amino groups are bound. Silane coupling agent (D-1
′) And a silane coupling agent (D-1 ″) having an organic group to which an epoxy group is bound, and the compounding ratio of the filler (C) is 85 to 85% of the total resin composition.
95% by weight of the epoxy resin composition for semiconductor encapsulation. 11. The compounding ratio of the curing agent (B) is such that the chemical equivalent ratio of the curing agent (B) to the epoxy resin (A) is 0.
The epoxy resin composition for semiconductor encapsulation according to claim 10, wherein the amount is in the range of 5 to 1.6. 12. The compounding ratio of the silane coupling agent (D) is 0.5 to 2% by weight with respect to the inorganic filler (C), according to claim 10. Epoxy resin composition for semiconductor encapsulation. 13. The epoxy for semiconductor encapsulation according to claim 10, wherein the epoxy resin (A) contains at least one epoxy resin having a structure represented by the following formula (I). Resin composition. Embedded image (However, R1 to R8 in the formula are a hydrogen atom, a carbon number 1 to
4 represents an alkyl group or a halogen atom). 14. A silane coupling agent (D) having an organic group to which an epoxy group of the silane coupling agent is bonded.
-1 ') and the ratio of the silane coupling agent (D-1 ") having an organic group to which all secondary amino groups are bonded is 70/30 to 1/99 by weight. The epoxy resin composition for semiconductor encapsulation according to claim 10. 15. The inorganic filler (C) has a particle size of 0.1 to 3
20 to 95% by weight of spherical silica having a particle size of 3 to 50 μm
The epoxy resin composition for semiconductor encapsulation according to any one of claims 10 to 14, which comprises 5 to 80% by weight of spherical silica of m. 16. The curing agent (B) contains at least one phenol p-xylylene copolymer having a structure represented by the following formula (II).
The epoxy resin composition for semiconductor encapsulation according to any one of 1 to 16. Embedded image (However, R in the formula may be the same or different and each represents a hydrogen atom, an alkyl group having 1 to 4 carbon atoms, or a halogen atom. M represents an integer of 0 or more.). 17. A semiconductor device in which a semiconductor element is encapsulated by the epoxy resin composition for encapsulating a semiconductor according to claim 1. 18. A semiconductor device in which a semiconductor element is encapsulated with the epoxy resin composition for encapsulating a semiconductor according to claim 10.