TWI408767B - A substrate processing apparatus, and a substrate processing apparatus - Google Patents

A substrate processing apparatus, and a substrate processing apparatus Download PDF

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TWI408767B
TWI408767B TW94134704A TW94134704A TWI408767B TW I408767 B TWI408767 B TW I408767B TW 94134704 A TW94134704 A TW 94134704A TW 94134704 A TW94134704 A TW 94134704A TW I408767 B TWI408767 B TW I408767B
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processing
processed
substrate
interval
time
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TW200620526A (en
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Tatsuya Ogi
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Tokyo Electron Ltd
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Abstract

<P>PROBLEM TO BE SOLVED: To enhance working ratio in each processing chamber and thereby enhance throughput of an entire processing apparatus by matching the timing of transferring wafers from cassette containers with the processing time at each processing chamber. <P>SOLUTION: The substrate processing apparatus 100 comprises a processing unit 110 having a plurality of processing chambers 140A, 140B (P1, P2) for applying given processing to wafers, a transfer unit 120 connected to the processing unit 110, a transfer unit side transfer mechanism 170 for transferring the wafers contained in cassette containers 134A, 134B to the processing unit, and a processing unit side transfer mechanism 180 for transferring the wafers transferred from the transfer unit to the processing chambers. A control unit 190 is provided that obtains wafer transferring timing for each processing chamber for transferring the wafers from the cassette containers to each processing chamber, based on processing times T<SB>P1</SB>, T<SB>P2</SB>of the wafers W<SB>P1</SB>, W<SB>P2</SB>in each processing chamber P1, P2, and transfers the wafers from the cassette containers according to the transfer timing. <P>COPYRIGHT: (C)2006,JPO&amp;NCIPI

Description

基板處理裝置及基板處理裝置之基板搬送方法Substrate processing device and substrate processing method

本發明關於對例如半導體晶圓、玻璃基板(例如液晶基板)等被處理基板施予特定處理的基板處理裝置及基板處理裝置之基板搬送方法。The present invention relates to a substrate processing apparatus and a substrate transfer method of a substrate processing apparatus that perform a specific process on a substrate to be processed such as a semiconductor wafer or a glass substrate (for example, a liquid crystal substrate).

此種基板處理裝置通常具備:處理單元,具有多數處理室用於對被處理基板、例如半導體晶圓(以下亦有單稱為「晶圓」)進行特定處理;及搬送單元,介由載入鎖定室連接於該處理單元(例如專利文獻1)。Such a substrate processing apparatus usually includes a processing unit having a plurality of processing chambers for performing specific processing on a substrate to be processed, for example, a semiconductor wafer (hereinafter simply referred to as "wafer"), and a transfer unit for loading The lock chamber is connected to the processing unit (for example, Patent Document 1).

例如群組加工(cluster tool)型基板處理裝置,上述處理單元為例如專利文獻1之圖6所示,於形成為多角形之共通搬送室之周圍將上述多數處理室與載入鎖定室氣密連接而構成。於共通搬送室內設有由搬送臂等構成之處理單元側搬送機構,藉由該處理單元側搬送機構於多數處理室與載入鎖定室之間進行晶圓之搬出入。於搬送單元亦設有由搬送臂等構成之處理單元側搬送機構,藉由該處理單元側搬送機構於收容晶圓之卡匣容器(基板收納容器)與上述載入鎖定室之間進行晶圓之搬出入。For example, a cluster tool type substrate processing apparatus, which is, for example, as shown in FIG. 6 of Patent Document 1, airtightly seals a plurality of processing chambers and a load lock chamber around a common transfer chamber formed in a polygonal shape. Connected to form. A processing unit side conveying mechanism including a transfer arm or the like is provided in the common transfer chamber, and the processing unit side transfer mechanism carries out the wafer transfer between the plurality of processing chambers and the load lock chamber. The transport unit is also provided with a processing unit side transport mechanism including a transfer arm, and the wafer is transported between the cassette container (substrate storage container) containing the wafer and the load lock chamber by the processing unit side transport mechanism. Move in and out.

於上述基板處理裝置,對卡匣容器收納之晶圓施予特定處理時,首先,於搬送單元藉由處理單元側搬送機構由卡匣容器搬出未處理晶圓。由卡匣容器被搬出之未處理晶圓,在搬入載入鎖定室之前,被搬入設於搬送單元之定位裝置(例如定向器、預對準平台)施予定位。定位後之未處理晶圓由定位裝置搬出、被搬入載入鎖定室。When the substrate processing apparatus applies a specific process to the wafer stored in the cassette container, first, the unloading wafer is carried out by the processing unit side transfer mechanism from the cassette container by the processing unit side transport mechanism. The unprocessed wafer that has been carried out from the cassette container is loaded into a positioning device (for example, an orienter or a pre-alignment stage) provided in the transport unit before being loaded into the lock chamber. The unprocessed wafer after positioning is carried out by the positioning device and carried into the load lock chamber.

被搬入載入鎖定室之未處理晶圓,係藉由處理單元側搬送機構由載入鎖定室搬出,被搬入處理室施予特定處理。處理室內之處理結束後處理完成晶圓藉由處理單元側搬送機構由處理室被搬出,回至載入鎖定室。回至載入鎖定室之處理完成晶圓藉由處理單元側搬送機構回至卡匣容器。The unprocessed wafer loaded into the lock lock chamber is carried out by the processing unit side transport mechanism from the load lock chamber, and is carried into the processing chamber to perform a specific process. After the processing in the processing chamber is completed, the processing completion wafer is carried out by the processing unit side transfer mechanism from the processing chamber, and is returned to the load lock chamber. The process wafer returned to the load lock chamber is returned to the cassette container by the processing unit side transfer mechanism.

欲提升上述基板處理裝置中各處理室內之處理作業效率,較好是使未處理晶圓儘可能接近處理室而待機,因此,在進行處理室內處理之間亦由卡匣容器將未處理晶圓依序搬出,使彼等晶圓待機於共通搬送室、載入鎖定室及定位裝置等。當處理室之1片晶圓處理完成後,處理完成之晶圓立即收納於卡匣容器,依序傳送上述各待機中之未處理晶圓立即將次一未處理晶圓搬入處理室。In order to improve the processing efficiency in each processing chamber in the substrate processing apparatus, it is preferable to leave the unprocessed wafer as close as possible to the processing chamber, and therefore, the unprocessed wafer is also handled by the cassette container during processing in the processing chamber. The substrates are sequentially carried out so that their wafers stand by in the common transfer chamber, the load lock chamber, and the positioning device. After one wafer processing in the processing chamber is completed, the processed wafer is immediately stored in the cassette container, and the unprocessed wafers in each standby are sequentially transferred to immediately transfer the next unprocessed wafer into the processing chamber.

又,於各處理室並行進行晶圓處理時,欲提升各處理室之稼動之效率時,決定以何種搬送時序將各處理室內處理之晶圓由卡匣容器搬出乃重要者。關於此點,習如上,由卡匣容器搬出次一未處理晶圓時,係比較各處理室內處理之殘存時間,將殘存時間最短之處理室內處理之未處理晶圓由卡匣容器檢測、搬出。依此則,例如處理之殘存時間越短之處理室越早成為可以進行次一晶圓之處理,因此,依殘存時間較短之順序由卡匣容器搬出晶圓,即可提升各處理室之稼動效率。Further, when wafer processing is performed in parallel in each processing chamber, it is important to determine which transfer timing to carry the wafers processed in each processing chamber from the cassette container when it is desired to increase the efficiency of the processing in each processing chamber. In this regard, when the next unprocessed wafer is carried out from the cassette container, the remaining time of the processing in each processing chamber is compared, and the unprocessed wafer processed in the processing chamber having the shortest remaining time is detected and carried out by the cassette container. . In this case, for example, the processing chamber having the shorter remaining time of the processing can be processed as the next wafer. Therefore, the wafers can be carried out from the cassette container in the order of the remaining time, thereby improving the processing chambers. Product efficiency.

專利文獻1:特開2002-237507號公報Patent Document 1: JP-A-2002-237507

但是,大多情況下,於各處理室例如蝕刻處理或成膜處理等不同種類之處理被進行,即使同種處理時亦進行處理條件不同之處理,因此,各處理室之晶圓處理時間(例如晶圓被搬入至該晶圓之處理完成被搬出、次一晶圓可被搬入為止之時間)大多互異。However, in many cases, different types of processing are performed in each processing chamber, for example, an etching process or a film forming process, and even if the processing conditions are different in the same processing, the wafer processing time of each processing chamber (for example, crystal) The time when the circle is carried into the wafer and the processing is completed and the next wafer can be carried in is often different.

然而,上述習知技術中,由卡匣容器搬出次一未處理晶圓時,係僅著眼於各處理室之處理之殘存時間,設為依該殘存時間較短之順序由卡匣容器搬出次一未處理晶圓的搬送時序,並未考慮上述各處理室之處理時間之不同。However, in the above-mentioned prior art, when the next unprocessed wafer is carried out from the cassette container, only the remaining time of the processing in each processing chamber is focused, and it is carried out by the cassette container in the order of the remaining time. The processing timing of an unprocessed wafer does not take into account the difference in processing time of each of the processing chambers described above.

因此,相較於處理時間較短之處理室,例如處理時間較長之處理室之晶圓處理之殘存時間較短時,處理時間較長之處理室之晶圓先由卡匣容器搬出,該晶圓將長時間待機於共通搬送室、載入鎖定室及定位裝置等,導致處理時間較短之處理室之晶圓無法由卡匣容器搬出之問題,亦即,造成處理室之稼動效率降低,基板處理裝置全體之作業效率降低之問題。Therefore, when the residual time of the wafer processing in the processing chamber having a shorter processing time is shorter than the processing time in which the processing time is shorter, the wafer of the processing chamber having a longer processing time is first carried out by the cassette container. The wafer will stand by for a long time in the common transfer chamber, the load lock chamber, the positioning device, etc., and the wafer in the processing chamber with a short processing time cannot be carried out by the cassette container, that is, the processing efficiency of the processing chamber is lowered. The problem of reduced work efficiency of the entire substrate processing apparatus.

更具體言之為,例如處理時間較長之處理室P1之處理與處理時間較短之處理室P2之處理被並行進行時,若處理時間較長之處理室P1之處理之殘存時間較短時,於該處理室P1被處理之晶圓WP 1 成為次一由卡匣容器取出之對象。More specifically, for example, when the processing of the processing chamber P1 having a long processing time and the processing of the processing chamber P2 having a short processing time are performed in parallel, if the remaining time of the processing of the processing chamber P1 having a long processing time is short The wafer W P 1 processed in the processing chamber P1 becomes the next object to be taken out by the cassette container.

此情況下,例如於共通搬送室已有處理室P1之次一處理之另一晶圓處於待機狀態,因此,即使處理室P1之處理結束晶圓WP 1 由卡匣容器被搬出時,該晶圓WP 1 亦無法立即被處理。此乃因為,即使已經待機於共通搬送室、載入鎖定室及定位裝置等之晶圓被依順序搬送,在先搬入處理室P1之另一晶圓之處理結束之前,由卡匣容器搬出之晶圓W1 乃為待機於共通搬送室、載入鎖定室及定位裝置等之狀態。In this case when, for example, the common transfer chamber prior to processing another wafer views of a processing chamber of P1 in the standby state, therefore, even if the end of the processing chamber P1 of the wafer W P 1 is unloaded from the cassette container, the Wafer W P 1 cannot be processed immediately. This is because even if the wafers that have been in the common transfer chamber, the load lock chamber, and the positioning device are sequentially transported, they are carried out by the cassette container before the processing of the other wafer that has been carried into the processing chamber P1 is completed. The wafer W 1 is in a state of being in standby in the common transfer chamber, the load lock chamber, the positioning device, and the like.

即使處理時間較短之處理室P2之處理立即結束成為未稼動情況下,處理時間較短之處理室P2之處理之晶圓WP 2 乃無法由卡匣容器搬出。因此,於處理時間較短之處理室P2產生多餘之等待時間,處理室P2之稼動效率降低,基板處理裝置全體之作業效率降低。Even if the processing of the processing chamber P2 having a short processing time is immediately completed and the processing is not performed, the wafer W P 2 processed in the processing chamber P2 having a short processing time cannot be carried out by the cassette container. Therefore, an unnecessary waiting time is generated in the processing chamber P2 having a short processing time, the efficiency of the processing chamber P2 is lowered, and the work efficiency of the entire substrate processing apparatus is lowered.

本發明有鑑於上述問題,目的在於提供基板處理裝置及基板處理裝置之基板搬送方法,其在各處理室並行處理被處理基板時,可使來自基板收納容器之被處理基板之搬送時序配合各處理室之處理時間,依此則可提升各處理室之稼動效率,可提升基板處理裝置全體之作業效率。The present invention has been made in view of the above problems, and an object of the present invention is to provide a substrate processing method for a substrate processing apparatus and a substrate processing apparatus, wherein when the processing substrate is processed in parallel in each processing chamber, the processing timing of the substrate to be processed from the substrate storage container can be matched with each processing. The processing time of the chamber can improve the efficiency of each processing chamber and improve the working efficiency of the entire substrate processing apparatus.

為解決上述問題,依本發明之一觀點提供之基板處理裝置,其特徵為具備:處理單元,具有多數處理室用於對被處理基板進行特定處理;搬送單元,連接於該處理單元;搬送單元側搬送機構,設於上述搬送單元,用於將基板收納容器收容之上述被處理基板搬送至上述處理單元;及處理單元側搬送機構,設於上述處理單元,用於將上述搬送單元所搬送之上述被處理基板搬送至上述處理室;具備:控制手段,用於依據上述各處理室中上述被處理基板之處理時間,對各個處理室算出由上述基板收納容器對上述各處理室搬送之上述被處理基板之搬送時序,依該搬送時序由上述基板收納容器搬出上述被處理基板。In order to solve the above problems, a substrate processing apparatus according to one aspect of the present invention includes: a processing unit having a plurality of processing chambers for performing specific processing on a substrate to be processed; a transport unit connected to the processing unit; and a transport unit The side transport mechanism is provided in the transport unit, and the processing substrate for accommodating the substrate storage container is transported to the processing unit; and the processing unit side transport mechanism is provided in the processing unit for transporting the transport unit The substrate to be processed is transferred to the processing chamber, and includes control means for calculating, based on a processing time of the substrate to be processed in each of the processing chambers, the processing of each of the processing chambers by the substrate storage container. The transfer timing of the substrate is processed, and the substrate to be processed is carried out from the substrate storage container in accordance with the transfer timing.

為解決上述問題,依本發明另一觀點提供之基板處理裝置之基板搬送方法,其特徵為具備:處理單元,具有多數處理室用於對被處理基板進行特定處理;搬送單元,連接於該處理單元;搬送單元側搬送機構,設於上述搬送單元,用於將基板收納容器收容之上述被處理基板搬送至上述處理單元;及處理單元側搬送機構,設於上述處理單元,用於將上述搬送單元所搬送之上述被處理基板搬送至上述處理室的基板處理裝置之基板搬送方法;依據上述各處理室中上述被處理基板之處理時間,對各個處理室算出由上述基板收納容器對上述各處理室搬送之上述被處理基板之搬送時序,對上述被處理基板進行處理時,係依上述搬送時序由上述基板收納容器搬出上述被處理基板。In order to solve the above problems, a substrate transfer method of a substrate processing apparatus according to another aspect of the present invention includes a processing unit having a plurality of processing chambers for performing specific processing on a substrate to be processed, and a transport unit connected to the processing The transport unit side transport mechanism is provided in the transport unit, and the processing substrate for accommodating the substrate storage container is transported to the processing unit, and the processing unit side transport mechanism is provided in the processing unit for transporting the transport unit a substrate transfer method of the substrate processing apparatus in which the substrate to be processed is transported to the processing chamber; and the processing of each of the processing chambers by the substrate storage container is calculated for each processing chamber based on the processing time of the processed substrate in each processing chamber When the substrate to be processed is processed by the chamber, the substrate to be processed is transported from the substrate storage container in accordance with the transfer timing.

依上述裝置或方法,依據各處理室之被處理基板之處理時間,依上述各處理室預先算出之搬送時序由基板收納容器搬出被處理基板,因此,於各處理室並行處理被處理基板時,可使來自基板收納容器之被處理基板之搬送時序配合各處理室之處理時間,依此則,可提升各處理室之稼動效率,可提升基板處理裝置全體之作業效率。例如,處理時間較長之處理室處理之被處理基板可以較長間隔由基板收納容器搬出,處理時間較短之處理室處理之被處理基板可以較短間隔由基板收納容器搬出。依此則習知問題之處理時間較長之處理室之被處理基板長時間待機於共通搬送室、載入鎖定室及定位裝置等,處理時間較短之處理室之被處理基板無法由基板收納容器搬出之情況可以消除,可提升各處理室之稼動效率,可提升基板處理裝置全體之作業效率。According to the above-described apparatus or method, according to the processing time of the substrate to be processed in each processing chamber, the substrate to be processed is carried out from the substrate storage container in accordance with the transfer timing calculated in advance in each of the processing chambers. Therefore, when the processed substrate is processed in parallel in each processing chamber, The processing timing of the substrate to be processed from the substrate storage container can be matched with the processing time of each processing chamber, whereby the processing efficiency of each processing chamber can be improved, and the work efficiency of the entire substrate processing apparatus can be improved. For example, the substrate to be processed which is processed in a processing chamber having a long processing time can be carried out from the substrate storage container at a long interval, and the substrate to be processed which is processed in a processing chamber having a short processing time can be carried out from the substrate storage container at a short interval. In this case, the substrate to be processed in the processing chamber having a long processing time has a long waiting time in the common transfer chamber, the load lock chamber, the positioning device, and the like, and the substrate to be processed in the processing chamber having a short processing time cannot be stored in the substrate. The removal of the container can be eliminated, the efficiency of each processing chamber can be improved, and the working efficiency of the entire substrate processing apparatus can be improved.

又,於上述裝置或方法,上述被處理基板之搬送時序,例如係由上述基板收納容器搬出上述被處理基板時之各個處理室之上述被處理基板之搬出數比與搬出間隔。所謂被處理基板之搬出數比係指由基板收納容器搬出之各處理室之被處理基板之搬出數比,另外,被處理基板之搬出間隔,係指由基板收納容器搬出之各處理室之被處理基板之搬出間隔。Further, in the above-described apparatus or method, the transport timing of the substrate to be processed is, for example, the number of carry-out ratios of the substrate to be processed and the carry-out interval in each of the processing chambers when the substrate storage container is carried out. The ratio of the number of substrates to be processed to be processed refers to the ratio of the number of substrates to be processed in each of the processing chambers carried out by the substrate storage container, and the interval at which the substrate to be processed is removed is the processing chamber that is carried out by the substrate storage container. Handle the substrate removal interval.

此情況下較好是,上述被處理基板之搬出數比係依據,在依上述各處理室之上述被處理基板之處理時間而被決定之基準搬出間隔之各區間內、於各處理室可處理之上述被處理基板之最大片數而算出,上述被處理基板之搬出間隔設為,在上述各個處理室以上述基準搬出間隔使上述被處理基板之搬出數比之片數,依據上述各處理室之上述被處理基板之每一處理時間1片1片地搬出之間隔。In this case, it is preferable that the number of times of carrying out the substrate to be processed is determined in each of the processing chambers in each of the sections of the reference carrying-out interval determined by the processing time of the substrate to be processed in each of the processing chambers. The number of sheets to be processed is calculated by the maximum number of substrates to be processed, and the number of sheets to be processed in the respective processing chambers is set to be equal to the number of sheets to be processed in the processing chambers. The processing time of each of the substrates to be processed is shifted by one piece per sheet.

於此方法,藉由算出來自基板收納容器之被處理基板之搬送時序,例如於某一處理室進行被處理基板之處理時間內,於其他處理室可以進行處理可能之最大片數之被處理基板之處理,可減少各處理室之處理等待時間,可提升各處理室之稼動效率。又,依每一處理室於基準搬出間隔由基板收納容器搬出各1片或各多數片被處理基板,如此則,來自基板收納容器之被處理基板之搬送時序,對於各處理室之每一被處理基板,例如針對各處理室之每一被處理基板使其經常偏移搬送最初1片時產生之初始時序之偏移時間分,因此被處理基板被搬出之時序不會同時。依此則,於各處理室不會發生晶圓搬出等待引起之等待時間。In this method, by calculating the transport timing of the substrate to be processed from the substrate storage container, for example, the processing time of the substrate to be processed in one processing chamber, and the maximum number of processed substrates that can be processed in other processing chambers The treatment can reduce the processing waiting time of each processing chamber, and can improve the efficiency of each processing room. In addition, each of the processing chambers carries out one or a plurality of processed substrates from the substrate storage container at each of the processing chambers. Thus, the transfer timing of the substrates to be processed from the substrate storage container is used for each processing chamber. In the processing of the substrate, for example, the substrate to be processed for each processing chamber is often offset by the offset time of the initial timing generated when the first sheet is transferred. Therefore, the timing at which the substrate to be processed is carried out is not simultaneous. Accordingly, the waiting time caused by the wafer unloading wait does not occur in each processing chamber.

又,於上述裝置或方法,上述被處理基板之搬出數比,例如係依據上述各處理室之上述被處理基板之處理時間,假設上述各處理室之中處理時間最長之處理室之處理時間設為上述基準搬出間隔時,依在該基準搬出間隔之區間內於其他處理室可處理之上述被處理基板之最大片數而算出。如上述說明,被處理基板之搬出數比,係依據處理時間最長處理室之處理時間設定之基準搬出間隔而被決定,基準搬出間隔之決定方法變為容易,因此,被處理基板之搬出數比之算出變為容易。Further, in the above apparatus or method, the ratio of the number of carried out substrates to be processed is determined, for example, based on the processing time of the substrate to be processed in each of the processing chambers, and the processing time of the processing chamber having the longest processing time among the processing chambers is assumed In the case of the above-described reference carry-out interval, the maximum number of substrates to be processed that can be processed in other processing chambers in the interval of the reference carry-out interval is calculated. As described above, the ratio of the number of substrates to be processed is determined based on the reference carry-out interval set by the processing time of the processing chamber which is the longest processing time, and the method for determining the reference carrying interval is easy. Therefore, the number of substrates to be processed is smaller than that. The calculation becomes easy.

又,於上述裝置或方法較好是,上述基準搬出間隔依據上述各處理室之基準搬出間隔之各區間內之等待時間,使該等待時間變短而予以決定。因此,各處理室之等待時間可以最適當化,更能提升基板處理裝置全體之作業效率。Further, in the above apparatus or method, it is preferable that the reference carry-out interval is determined by shortening the waiting time in accordance with the waiting time in each section of the reference carry-out interval of each of the processing chambers. Therefore, the waiting time of each processing chamber can be optimized, and the work efficiency of the entire substrate processing apparatus can be improved.

為解決上述問題,依本發明另一觀點提供之基板處理裝置之基板搬送方法,其特徵為:依預先算出之搬送時序、依序使基板收納容器收容之多數上述被處理基板分別朝應處理之處理室搬送,依此而於多數處理室並行對上述被處理基板施予處理的基板處理裝置之基板搬送方法;上述搬送時序具有以下步驟:算出依上述各處理室中上述被處理基板之處理時間而被決定之基準搬出間隔之區間內之上述各個處理室之上述被處理基板之搬出數比的步驟;及依據上述被處理基板之搬出數比而算出上述各個處理室之上述被處理基板之搬出間隔的步驟。In order to solve the above problems, a substrate transfer method of a substrate processing apparatus according to another aspect of the present invention is characterized in that a plurality of the substrates to be processed which are accommodated in the substrate storage container are sequentially processed in accordance with a predetermined transfer timing. a substrate transfer method of a substrate processing apparatus that performs processing on the substrate to be processed in parallel in a plurality of processing chambers; the transfer timing has a step of calculating a processing time of the substrate to be processed in each of the processing chambers And a step of calculating the ratio of the number of substrates to be processed in each of the processing chambers in the interval of the determined reference carrying interval; and calculating the carrying out of the processed substrate in each of the processing chambers based on the ratio of the number of substrates to be processed The steps of the interval.

又,於上述方法,算出上述被處理基板之搬出數比的步驟,可具有以下步驟:假設在上述各處理室之中處理時間最長之處理室處理1片上述被處理基板之處理時間設為上述基準搬出間隔時,算出在該基準搬出間隔之區間內於其他處理室可處理之上述被處理基板之最大片數n的步驟;假設在上述處理時間最長之處理室處理1片被處理基板之處理時間為基準搬出間隔時,算出上述基準搬出間隔之區間內之上述其他處理室之等待時間的步驟;假設在上述其他處理室處理n+1片上述被處理基板之處理時間為基準搬出間隔時,算出上述基準搬出間隔之區間內之上述處理時間最長之處理室之等待時間的步驟;及比較彼等之等待時間,當上述處理時間最長之處理室之等待時間為上述其他處理室之等待時間以下時,將上述基準搬出間隔決定為上述處理時間最長之處理室處理1片被處理基板之處理時間之同時,將上述被處理基板之搬出數比設為1:n,當上述處理時間最長之處理室之等待時間大於上述其他處理室之等待時間時,將上述基準搬出間隔決定為上述其他處理室處理n+1片上述被處理基板之處理時間之同時,將上述被處理基板之搬出數比設為1:n+1。Further, in the above method, the step of calculating the number of times of carrying out the substrate to be processed may include the step of: processing the processing time of processing one sheet of the substrate to be processed in the processing chamber having the longest processing time in each of the processing chambers At the time of the reference carry-out interval, a step of calculating the maximum number n of substrates to be processed that can be processed in another processing chamber in the interval of the reference carry-out interval; and processing of processing one substrate to be processed in the processing chamber having the longest processing time When the time is the reference carry-out interval, the step of calculating the waiting time of the other processing chamber in the section of the reference carrying-out interval is calculated, and when the processing time of the n+1 pieces of the processed substrate is processed as the reference carrying-out interval in the other processing chamber, the calculation is performed. a step of waiting for the processing chamber having the longest processing time in the interval of the reference carry-out interval; and comparing the waiting times of the processing chambers, when the waiting time of the processing chamber having the longest processing time is equal to or less than the waiting time of the other processing chambers, The above-mentioned reference carry-out interval is determined as the processing room having the longest processing time When the processing time of one substrate to be processed is controlled, the ratio of the number of carried out substrates to be processed is set to 1:n, and when the waiting time of the processing chamber having the longest processing time is longer than the waiting time of the other processing chambers, The reference carry-out interval is determined by the processing time of the other processing chambers for processing the n+1 pieces of the substrate to be processed, and the number of times of transporting the substrate to be processed is 1:n+1.

此情況下,算出上述被處理基板之搬出間隔之步驟,可具有以下步驟:當上述被處理基板之搬出數比為1:n時,上述處理時間最長之處理室之上述被處理基板之搬出數間隔,係設為在上述基準搬出間隔1片1片地搬出之間隔,上述其他處理室之上述被處理基板之搬出數間隔,係設為在上述基準搬出間隔將各n片於該每一處理時間1片1片地搬出之間隔,當上述被處理基板之搬出數比為1:n+1時,上述處理時間最長之處理室之上述被處理基板之搬出數間隔,係設為在上述基準搬出間隔1片1片地搬出之間隔,上述其他處理室之上述被處理基板之搬出數間隔,係設為在上述基準搬出間隔將各n+1片於該每一處理時間1片1片地搬出之間隔的步驟。In this case, the step of calculating the carry-out interval of the substrate to be processed may include the step of moving the number of substrates to be processed in the processing chamber having the longest processing time when the number of substrates to be processed is 1:n The interval is the interval at which the reference carry-out interval is carried out one by one, and the number of times of transporting the substrate to be processed in the other processing chamber is set to be n pieces at the reference carry-out interval. When the number of times of transporting the substrate to be processed is 1:n+1, the interval between the number of substrates to be processed in the processing chamber having the longest processing time is set at the reference carry-out interval. The interval at which the one substrate is carried out one by one, and the number of times of transporting the substrate to be processed in the other processing chambers is an interval at which the n+1 sheets are carried out one sheet at a time in each of the processing times at the reference carry-out interval. step.

如上述說明,被處理基板之搬出數比,係依據處理時間最長處理室之處理時間設定之基準搬出間隔而被決定,基準搬出間隔之決定方法變為容易,因此,被處理基板之搬出數比之算出變為容易。另外,決定基準搬出間隔,使處理時間最長之處理室與其他處理室之其中任一之等待時間成為最短,依據基準搬出間隔算出來自基板收納容器之被處理基板之搬送時序(例如被處理基板之搬出數比與被處理基板之搬出間隔),因此,各處理室之等待時間可以最適當化,更能提升基板處理裝置全體之作業效率。As described above, the ratio of the number of substrates to be processed is determined based on the reference carry-out interval set by the processing time of the processing chamber which is the longest processing time, and the method for determining the reference carrying interval is easy. Therefore, the number of substrates to be processed is smaller than that. The calculation becomes easy. In addition, the reference carry-out interval is determined, and the waiting time of any one of the processing chamber having the longest processing time and the other processing chamber is minimized, and the transport timing of the substrate to be processed from the substrate storage container is calculated based on the reference carry-out interval (for example, the substrate to be processed) Since the number of unloading ratios and the time between the substrates to be processed are shifted out, the waiting time of each processing chamber can be optimized, and the work efficiency of the entire substrate processing apparatus can be improved.

又,於上述方法,算出上述被處理基板之搬出數比的步驟,可具有以下步驟:假設在上述各處理室之中處理時間最長之處理室處理m片上述被處理基板之處理時間設為上述基準搬出間隔時,算出在該基準搬出間隔之區間內於其他處理室可處理之上述被處理基板之最大片數n的步驟;假設在上述處理時間最長之處理室處理m片被處理基板之處理時間為基準搬出間隔時,算出上述基準搬出間隔之區間內之上述其他處理室之等待時間的步驟;假設在上述其他處理室處理n+1片上述被處理基板之處理時間為基準搬出間隔時,算出上述基準搬出間隔之區間內之上述處理時間最長之處理室之等待時間的步驟;變化上述m算出上述被處理基板之最大片數n、上述其他處理室之等待時間、上述處理時間最長之處理室之等待時間,決定上述其他處理室之等待時間與上述處理時間最長之處理室之等待時間成為最小的m、n的步驟:及比較所決定之m、n時之上述其他處理室之等待時間與上述處理時間最長之處理室之等待時間,當上述處理時間最長之處理室之等待時間為上述其他處理室之等待時間以下時,將上述基準搬出間隔決定為上述處理時間最長之處理室處理m片被處理基板之處理時間之同時,將上述被處理基板之搬出數比設為m:n,當上述處理時間最長之處理室之等待時間大於上述其他處理室之等待時間時,將上述基準搬出間隔決定為上述其他處理室處理n+1片上述被處理基板之處理時間之同時,將上述被處理基板之搬出數比設為m:n+1。Further, in the above method, the step of calculating the number of times of carrying out the substrate to be processed may be performed by assuming that the processing time for processing the m-th substrate to be processed in the processing chamber having the longest processing time among the processing chambers is At the time of the reference carry-out interval, a step of calculating the maximum number n of substrates to be processed that can be processed in another processing chamber in the interval of the reference carry-out interval; and processing the m-processed substrates in the processing chamber having the longest processing time When the time is the reference carry-out interval, the step of calculating the waiting time of the other processing chamber in the interval of the reference carrying interval is calculated, and when the processing time of the n+1 pieces of the processed substrate in the other processing chamber is the reference carrying-out interval, Calculating a waiting time of the processing chamber having the longest processing time in the interval of the reference carrying-out interval; and changing the m to calculate the maximum number of substrates n to be processed, the waiting time of the other processing chamber, and the processing time of the processing time being the longest Waiting time of the room, determining the waiting time of the other processing rooms and the above processing time The processing time of the longest processing chamber becomes the minimum m, n steps: and the waiting time of the other processing chambers when the m and n are determined are compared with the waiting time of the processing chamber having the longest processing time, when the processing time is the longest When the waiting time of the processing chamber is equal to or less than the waiting time of the other processing chambers, the reference carrying-out interval is determined as the processing time in which the processing chamber having the longest processing time processes the m-substrate to be processed, and the substrate to be processed is carried out. The ratio is set to m:n. When the waiting time of the processing chamber having the longest processing time is greater than the waiting time of the other processing chambers, the reference carrying out interval is determined as the processing time of the other processing chambers to process n+1 pieces of the processed substrate. At the same time, the ratio of the number of carried out substrates to be processed is m:n+1.

此情況下,算出上述被處理基板之搬出間隔之步驟,可具有以下步驟:當上述被處理基板之搬出數比為m:n時,上述處理時間最長之處理室之上述被處理基板之搬出數間隔,係設為在上述基準搬出間隔將各m片於該每一處理時間1片1片地搬出之間隔,上述其他處理室之上述被處理基板之搬出數間隔,係設為在上述基準搬出間隔將各n片於該每一處理時間1片1片地搬出之間隔,當上述被處理基板之搬出數比為m:n+1時,上述處理時間最長之處理室之上述被處理基板之搬出數間隔,係設為在上述基準搬出間隔將各m片於該每一處理時間1片1片地搬出之間隔,上述其他處理室之上述被處理基板之搬出數間隔,係設為在上述基準搬出間隔將各n+1片於該每一處理時間1片1片地搬出之間隔的步驟。In this case, the step of calculating the carrying-out interval of the substrate to be processed may include the step of moving the number of substrates to be processed in the processing chamber having the longest processing time when the number of substrates to be processed is m:n The interval is such that the m pieces are ejected one by one in each of the processing times at the reference carry-out interval, and the number of times of transporting the substrate to be processed in the other processing chamber is set to be carried out at the reference The interval at which the n pieces are carried out one by one in each of the processing times, and when the number of the substrates to be processed is m:n+1, the number of the substrates to be processed in the processing chamber having the longest processing time is The interval is such that the m pieces are ejected one by one in each of the processing times at the reference carry-out interval, and the number of times of transporting the substrate to be processed in the other processing chamber is set to be carried out at the reference The step of separating the n+1 pieces at intervals of one piece per piece of processing time.

依此則,使被處理基板之搬出數比,依據處理時間最長之處理室之處理時間之m倍時間而設定之基準搬出間隔予以決定,基準搬出間隔之決定方法變為容易,因此,被處理基板之搬出數比之算出變為容易。另外,決定基準搬出間隔,使處理時間最長之處理室與其他處理室之其中任一之等待時間成為最短,依據基準搬出間隔算出來自基板收納容器之被處理基板之搬送時序(例如被處理基板之搬出數比與被處理基板之搬出間隔),因此,各處理室之等待時間可以最適當化,更能提升基板處理裝置全體之作業效率。In this case, the number of times of carrying out the substrate to be processed is determined based on the reference carry-out interval set by m times the processing time of the processing chamber having the longest processing time, and the method of determining the reference carry-out interval becomes easy, and therefore, it is processed. It is easy to calculate the number of substrates to be carried out. In addition, the reference carry-out interval is determined, and the waiting time of any one of the processing chamber having the longest processing time and the other processing chamber is minimized, and the transport timing of the substrate to be processed from the substrate storage container is calculated based on the reference carry-out interval (for example, the substrate to be processed) Since the number of unloading ratios and the time between the substrates to be processed are shifted out, the waiting time of each processing chamber can be optimized, and the work efficiency of the entire substrate processing apparatus can be improved.

以下依圖面詳細說明本發明較佳實施形態。又,本說明書及圖面中,實質上具有同一功能之構成要素附加同一符號並省略重複說明。DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS Hereinafter, preferred embodiments of the present invention will be described in detail. In the present specification and the drawings, constituent elements that have substantially the same functions are denoted by the same reference numerals, and the description thereof will not be repeated.

(基板處理裝置之構成例)(Configuration Example of Substrate Processing Apparatus)

首先,參照圖面說明本發明實施形態之基板處理裝置。圖1為本發明實施形態之基板處理裝置之概略構成圖。該基板處理裝置100具備:多數處理單元110,用於對被處理基板例如半導體晶圓(以下亦有單純稱為「晶圓」)W進行成膜處理、蝕刻處理等各種處理;及搬送單元120,用於對處理單元110搬出入晶圓W。搬送單元120具有搬送晶圓W時共用之搬送室130。First, a substrate processing apparatus according to an embodiment of the present invention will be described with reference to the drawings. Fig. 1 is a schematic configuration diagram of a substrate processing apparatus according to an embodiment of the present invention. The substrate processing apparatus 100 includes a plurality of processing units 110 for performing various processes such as a film formation process and an etching process on a substrate to be processed, for example, a semiconductor wafer (hereinafter simply referred to as "wafer") W, and a transfer unit 120. It is used to carry in and out of the wafer W to the processing unit 110. The transport unit 120 has a transfer chamber 130 that is shared when the wafer W is transported.

搬送單元120之搬送室130由例如N2 氣體等惰性氣體或清靜空氣被循環之斷面大略多角形狀之箱體構成。於構成搬送室130之斷面大略多角形狀之長邊的一側面,並設多數卡匣台132(於此為132A及132B)。彼等卡匣台132A、132B分別可載置作為基板收納容器之一例的卡匣容器134A、134B。The transfer chamber 130 of the transfer unit 120 is composed of, for example, an inert gas such as N 2 gas or a case in which the clean air is circulated with a substantially polygonal polygonal cross section. A plurality of cassettes 132 (here, 132A and 132B) are provided on one side surface of the long side of the polygonal shape of the cross section of the transfer chamber 130. Each of the cassettes 132A and 132B can carry the cassette containers 134A and 134B as an example of the substrate storage container.

於各卡匣容器134A、134B可以等間距多段載置、收容例如最大25片晶圓W,內部為例如塡滿N2 氣體氣氛之密閉構造。搬送室130介由柵閥136A、136B可對內部進行晶圓W之搬出入。Each of the cassette containers 134A and 134B can be placed in a plurality of stages at equal intervals, and accommodates, for example, a maximum of 25 wafers W, and the inside thereof has a hermetic structure such as a full N 2 gas atmosphere. The transfer chamber 130 allows the inside of the wafer W to be carried in and out via the gate valves 136A and 136B.

於卡匣容器134A、134B分別收納後述處理室140A、140B處理之晶圓。但是,若知道哪一晶圓於哪一處理室被處理時,不需要將各處理室140A、140B處理之晶圓分開收納於個別之卡匣容器134A、134B。例如,於卡匣容器134A或134B之一方或兩方混在各處理室140A、140B處理之晶圓亦可。另外,圖1之例,例如於各卡匣台132A、132B分別可載置2台卡匣容器134A、134B之各1台,但卡匣台與卡匣容器之數目不限定於此,可為例如3台以上。The wafers processed by the processing chambers 140A and 140B to be described later are accommodated in the cassette containers 134A and 134B, respectively. However, if it is known which wafer is processed in which processing chamber, it is not necessary to separately store the wafers processed by the processing chambers 140A and 140B in the individual cassette containers 134A and 134B. For example, one or both of the cassette containers 134A or 134B may be mixed in the wafers processed by the respective processing chambers 140A, 140B. In addition, in the example of FIG. 1, for example, each of the two cassettes 134A and 134B may be placed on each of the cassettes 132A and 132B, but the number of the cassettes and the cassettes is not limited thereto. For example, 3 or more.

於搬送室130之端部,亦即在構成斷面大略多角形狀之短邊之一側面,設置作為定位裝置之定向器(預對準平台)137,該定向器137內部具備光學感測器139可以光學檢測旋轉載置台138與晶圓W之周緣部。該定向器137用於檢測出晶圓W之定向平面或溝槽等而進行定位者。At the end of the transfer chamber 130, that is, on one side of the short side forming a substantially polygonal shape of the cross section, an orienter (pre-alignment stage) 137 as a positioning device is provided, and the director 137 is provided with an optical sensor 139 inside. The peripheral portions of the rotating stage 138 and the wafer W can be optically detected. The director 137 is used to detect the orientation plane or the groove of the wafer W and the like.

處理單元110,具有對晶圓施予例如成膜處理(例如電漿CVD處理)或蝕刻處理(例如電漿蝕刻處理)等特定處理之處理室140(140A、140B)。各140搬送列A、B進行之處理可為同種處理或不同種處理。各晶圓依據預先記憶於控制部之記憶體等的蝕刻處理之處理工程之表示資訊(製程.參數)於各處理室140A、140B施予特定處理。關於各晶圓於哪一處理室處理,可依例如上述製程.參數判斷。處理單元110具備對處理室140A、140B進行晶圓W之搬出入的共通搬送室150。共通搬送室150形成為多角形、例如六角形,其周圍介由柵閥144A、144B配設上述各處理室140A、140B。The processing unit 110 has a processing chamber 140 (140A, 140B) that applies a specific process such as a film forming process (for example, a plasma CVD process) or an etching process (for example, a plasma etching process) to the wafer. The processing performed by each of the 140 transport columns A and B may be the same processing or different processing. Each wafer is subjected to a specific process in each of the processing chambers 140A and 140B in accordance with the display information (process parameters) of the processing of the etching process previously stored in the memory of the control unit. Regarding which processing chamber the wafers are processed, for example, the above process can be used. Parameter judgment. The processing unit 110 includes a common transfer chamber 150 that carries in and out of the wafer W to the processing chambers 140A and 140B. The common transfer chamber 150 is formed in a polygonal shape, for example, a hexagonal shape, and the respective processing chambers 140A and 140B are disposed around the gate valves 144A and 144B.

上述各處理室140A、140B對晶圓W施予例如同種或不同種之處理。於各處理室140A、140B內設置載置晶圓W之載置台142A、142B。又,處理室140不限定於2個,可另外追加。Each of the processing chambers 140A and 140B applies the same type or different kinds of processing to the wafer W. Mounting stages 142A and 142B on which the wafer W is placed are provided in the respective processing chambers 140A and 140B. Further, the number of the processing chambers 140 is not limited to two, and may be additionally added.

於共通搬送室150周圍,配設連接於搬送單元120之真空準備室之一例之第1、第2載入鎖定室160 M、160 N。具體言之為,第1、第2載入鎖定室160 M、160 N前端,係在共通搬送室150周圍介由柵閥(真空側柵閥)154 M、154 N分別被連接,第1、第2載入鎖定室160 M、160 N之底端,係於構成搬送室130之斷面大略多角形狀之長邊的另一側面分別介由柵閥(大氣側柵閥)162 M、162 N被連接。The first and second load lock chambers 160 M and 160 N which are one example of the vacuum preparation chamber connected to the transport unit 120 are disposed around the common transfer chamber 150. Specifically, the first and second load lock chambers 160 M and 160 N are connected to each other via the gate valves (vacuum side gate valves) 154 M and 154 N around the common transfer chamber 150, respectively. The bottom end of the second load lock chambers 160 M and 160 N is connected to the other side of the long side of the substantially polygonal shape of the cross section of the transfer chamber 130 via a gate valve (atmospheric side gate valve) 162 M, 162 N Connected.

第1、第2載入鎖定室160 M、160 N可被真空吸引,具有將晶圓W暫時保持施予壓力調整後,傳送至次段之功能。又,載入鎖定室160 M、160 N亦可具有冷卻機構或加熱機構。The first and second load lock chambers 160 M and 160 N are vacuum-suckable, and have a function of temporarily maintaining the wafer W under pressure adjustment and then transferring it to the second stage. Further, the load lock chambers 160 M, 160 N may have a cooling mechanism or a heating mechanism.

如上述說明,共通搬送室150與各處理室140A、140B之間以及共通搬送室150與上述各載入鎖定室160 M、160 N之間分別構成可以氣密開/關,被群組加工型化,必要時可構成和共通搬送室150內可以連通。又,上述第1、第2載入鎖定室160 M、160 N與上述搬送室130之間亦構成可以氣密開/關。As described above, the common transfer chamber 150 and the respective processing chambers 140A and 140B and the common transfer chamber 150 and the respective load lock chambers 160 M and 160 N are configured to be airtightly opened/closed, and are group-processed. It can be configured to communicate with the common transfer chamber 150 if necessary. Further, the first and second load lock chambers 160 M and 160 N and the transfer chamber 130 are also configured to be airtightly opened/closed.

於共通搬送室150內設置例如伸張、升降、旋動可能之由多關節臂部構成之處理單元側搬送機構180。處理單元側搬送機構180可存取各載入鎖定室160 M、160 N及各處理室140A、140B。例如晶圓被搬入各載入鎖定室160 M、160 N時,該晶圓藉由處理單元側搬送機構180被搬入處理該晶圓之處理室140A或140B。In the common transfer chamber 150, for example, the processing unit side transfer mechanism 180 composed of a multi-joint arm portion, such as stretching, lifting, and turning, is provided. The processing unit side transport mechanism 180 can access each of the load lock chambers 160 M, 160 N and the respective process chambers 140A, 140B. For example, when the wafer is loaded into each of the load lock chambers 160 M and 160 N, the wafer is carried into the processing chamber 140A or 140B for processing the wafer by the processing unit side transfer mechanism 180.

處理單元側搬送機構180由具有2個握柄之雙臂部機構構成,1次可使用2片晶圓。依此則,例如對各處理室140A、140B進行晶圓之搬出入時,可交換處理完成晶圓與未處理完成晶圓。又,處理單元側搬送機構180側之握柄述不限定於上述,亦可為僅有1個握柄之單臂部機構。The processing unit side conveying mechanism 180 is constituted by a two-arm mechanism having two grips, and two wafers can be used at a time. Accordingly, for example, when the wafers are moved in and out of the processing chambers 140A and 140B, the completed wafer and the unprocessed wafer can be exchanged. Further, the grip on the processing unit side conveying mechanism 180 side is not limited to the above, and may be a single arm mechanism having only one grip.

於搬送室130內設置使晶圓W沿著長邊方向(圖1之箭頭方向)搬送的搬送單元側搬送機構170。搬送單元側搬送機構170被固定之基台172,係於搬送室130內之中心部沿著長邊方向設置之導軌174上被之稱為可滑動。於基台172與導軌174分別設置線性馬達之可動子及固定子。於導軌174之端部設有驅動該線性馬達之線性馬達驅動機構176。於線性馬達驅動機構176連接控制部190。依此則,依據控制部190之控制信號可驅動176,搬送單元側搬送機構170連同基台172可沿著導軌174朝箭頭方向移動。The transport unit side transport mechanism 170 that transports the wafer W in the longitudinal direction (the direction of the arrow in FIG. 1) is provided in the transfer chamber 130. The base 172 to which the transport unit side transport mechanism 170 is fixed is slidably attached to the guide rail 174 which is provided along the longitudinal direction in the center portion of the transport chamber 130. A movable member and a stator of the linear motor are respectively disposed on the base 172 and the guide rail 174. A linear motor drive mechanism 176 for driving the linear motor is provided at an end of the guide rail 174. The control unit 190 is connected to the linear motor drive mechanism 176. Accordingly, the control unit 190 can be driven 176 according to the control signal of the control unit 190, and the transport unit side transport mechanism 170 and the base 172 can be moved in the direction of the arrow along the guide rail 174.

搬送單元側搬送機構170,和處理單元側搬送機構180同樣,係由具有2個握柄之雙臂部機構構成,1次可使用2片晶圓。依此則,例如對卡匣容器134、定向器137、載入鎖定室160 M、160 N等進行晶圓之搬出入時,可交換晶圓之搬出入。又,處理單元側搬送機構180側之握柄述不限定於上述,亦可為僅有1個握柄之單臂部機構。Similarly to the processing unit side transport mechanism 180, the transport unit side transport mechanism 170 is configured by a two-arm mechanism having two grips, and two wafers can be used at a time. Accordingly, for example, when the wafer is carried in and out of the cassette container 134, the director 137, and the load lock chambers 160 M and 160 N, the wafer can be exchanged for in and out. Further, the grip on the processing unit side conveying mechanism 180 side is not limited to the above, and may be a single arm mechanism having only one grip.

於基板處理裝置100設置,除各搬送機構170、180、各柵閥136、144、154、162、定向器137等之控制以外,亦包含後述算出來自卡匣容器134之晶圓之搬送時序之處理或依據該晶圓之搬送時序由卡匣容器134搬出晶圓之控制等基板處理裝置全體動作之控制的控制部190。控制部190具備例如構成該控制部190之本體的微電腦、各種資料等之記憶的記憶體等。In the substrate processing apparatus 100, in addition to the control of each of the transport mechanisms 170 and 180, the gate valves 136, 144, 154, and 162, and the director 137, the transfer timing of the wafer from the cassette container 134 is described later. The control unit 190 that controls or controls the overall operation of the substrate processing apparatus such as the control of carrying out the wafer by the cassette container 134 in accordance with the transfer timing of the wafer. The control unit 190 includes, for example, a microcomputer that constitutes the main body of the control unit 190, a memory for storing various materials, and the like.

(基板處理裝置之動作)(Operation of substrate processing apparatus)

以下說明上述構成之基板處理裝置之動作。藉由搬送單元側搬送機構170由卡匣容器134A或134B被搬出之晶圓W,係被搬送至定向器137移載於定向器137之旋轉載置台138,於此被定位。被定位後之晶圓由定向器137被搬出、被搬入載入鎖定室160 M、160 N內。此時,處理完成晶圓存在於載入鎖定室160 M或160 N時,搬出處理完成晶圓之後再搬入未處理完成晶圓。The operation of the substrate processing apparatus having the above configuration will be described below. The wafer W carried out by the cassette unit 134A or 134B by the transport unit side transport mechanism 170 is transported to the orienter 137 and transferred to the rotary mount 138 of the orienter 137, and is positioned therein. The positioned wafer is carried out by the director 137 and carried into the load lock chambers 160 M and 160 N. At this time, when the processed wafer is present in the load lock chamber 160 M or 160 N, the unprocessed wafer is carried out after the wafer is processed and completed.

被搬入載入鎖定室160 M或160 N之晶圓,係藉由處理單元側搬送機構180由載入鎖定室160 M或160 N被搬出,被搬入該晶圓處理用之處理室140A或140B施予特定處理。處理室140A或140B之處理完成後之處理完成晶圓,係藉由處理單元側搬送機構180由處理室140A或140B被搬出,回至載入鎖定室160 M或160 N。回至載入鎖定室160 M或160 N之處理完成晶圓,係藉由搬送單元側搬送機構170被回復至卡匣容器134A或134B。The wafer loaded into the lock chamber 160 M or 160 N is carried out by the processing unit side transport mechanism 180 from the load lock chamber 160 M or 160 N, and is carried into the processing chamber 140A or 140B for wafer processing. A specific treatment is administered. After the processing of the processing chamber 140A or 140B is completed, the wafer is processed, and the processing unit side transfer mechanism 180 is carried out from the processing chamber 140A or 140B to return to the load lock chamber 160 M or 160 N. The processed wafer returned to the load lock chamber 160 M or 160 N is returned to the cassette container 134A or 134B by the transport unit side transport mechanism 170.

欲提升處理室140A或140B之處理效率,較好是使未處理晶圓儘可能接近處理室處於待機位置,因此,於進行處理室140A或140B之處理期間亦由卡匣容器134A或134B逐次搬出未處理晶圓,使彼等晶圓待機於共通搬送室150、載入鎖定室160 M或160 N、定向器137等。處理室140A或140B之1片晶圓之處理結束後,處理完成晶圓立即回至卡匣容器134A或134B,依序傳送上述各待機中之未處理晶圓使待機於共通搬送室150之次一未處理晶圓立即被搬入處理室140A或140B。In order to improve the processing efficiency of the processing chamber 140A or 140B, it is preferable to make the unprocessed wafer as close as possible to the processing chamber in the standby position, and therefore, the processing is performed by the cassette container 134A or 134B during the processing of the processing chamber 140A or 140B. The wafers are not processed, and their wafers are placed in the common transfer chamber 150, the load lock chamber 160 M or 160 N, the director 137, and the like. After the processing of one wafer of the processing chamber 140A or 140B is completed, the processed wafer is immediately returned to the cassette container 134A or 134B, and the unprocessed wafers in the standbys are sequentially transferred to wait for the common transfer chamber 150. An unprocessed wafer is immediately moved into the processing chamber 140A or 140B.

於上述基板處理裝置100,在各處理室140A、140B並行進行晶圓處理時,欲提升各處理室140A、140B之稼動效率時,決定各處理室140A、140B處理之晶圓以何種搬送時序由處理室140A或140B被搬出乃重要之事。以下說明包含算出該搬送時序之處理的本實施形態之基板搬送方法。In the substrate processing apparatus 100, when wafer processing is performed in parallel in each of the processing chambers 140A and 140B, when the processing efficiency of each of the processing chambers 140A and 140B is to be improved, the transfer timing of the wafers processed by the processing chambers 140A and 140B is determined. It is important that the processing chamber 140A or 140B is carried out. The substrate transfer method of this embodiment including the process of calculating the transfer timing will be described below.

(基板處理裝置之基板搬送方法)(Substrate transfer method of substrate processing apparatus)

本實施形態之基板搬送方法之特徵在於:依據依各處理室之處理時間預先算出之晶圓搬送時序,藉由搬送單元側搬送機構170由各卡匣容器134搬出晶圓之點。依據各處理室之處理時間所對應之晶圓搬送時序而由各卡匣容器134搬出晶圓,因此,即使處理時間互異之多數處理室並行連續進行晶圓處理時,亦不會因各處理室之處理時間不同而產生多餘之等待時間,可提升基板處理裝置全體之作業效率。又,此處所謂各處理室之處理時間係指,1片晶圓處理必要之時間(例如包含製程時間),例如於各處理室自1片晶圓被搬入至該晶圓之處理結束被搬出,次一晶圓可被搬入為止之時間。In the substrate transfer method of the present embodiment, the wafer transfer timing calculated in advance by the processing time of each processing chamber is carried out by the transfer unit side transfer mechanism 170 by the respective cassette containers 134. Since the wafers are carried out by the respective cassette containers 134 in accordance with the wafer transfer timing corresponding to the processing time of each processing chamber, even if a plurality of processing chambers having different processing times are continuously processed in parallel, the processing is not performed. The processing time of the chamber is different and an unnecessary waiting time is generated, which improves the working efficiency of the entire substrate processing apparatus. Here, the processing time of each processing chamber refers to a time required for one wafer processing (for example, including a processing time), and for example, the processing is carried out from one wafer to the wafer in each processing chamber. The time when the next wafer can be moved in.

晶圓搬送時序,例如由晶圓搬出數比與晶圓搬出間隔決定。此處所謂晶圓搬出數比係指由卡匣容器134搬出之各個處理室之晶圓搬出數之比,晶圓搬出間隔係指由卡匣容器134搬出之各個處理室之晶圓搬出間隔。例如,假設相當於晶圓1片之處理時間最長之處理室為P1,其他處理室為Pk(k=2、3、....),處理室P1之相當於晶圓1片之處理時間設為Tp1,其他處理室Pk之相當於晶圓1片之處理時間設為Tpk,處理室P1處理之晶圓設為Wp1,其他處理室Pk處理之晶圓設為Wpk,則晶圓搬出數比成為對應各處理室P1、Pk之各處理時間Tp1、Tpk由卡匣容器134搬出之晶圓Wp1與晶圓Wpk之搬出數比。又,晶圓搬出間隔成為在上述晶圓搬出數比之下由卡匣容器134搬出之晶圓Wp1、晶圓Wpk之各搬出間隔。The wafer transfer timing is determined, for example, by the wafer carry-out ratio and the wafer carry-out interval. Here, the wafer carry-out ratio refers to the ratio of the number of wafers carried out by each of the processing chambers carried out by the cassette container 134, and the wafer unloading interval refers to the wafer unloading interval of each processing chamber carried out by the cassette container 134. For example, suppose that the processing chamber that has the longest processing time equivalent to one wafer is P1, the other processing chambers are Pk (k=2, 3, . . . ), and the processing chamber P1 corresponds to the processing time of one wafer. When Tp1 is set, the processing time corresponding to one wafer of the other processing chambers Pk is Tpk, the wafer processed by the processing chamber P1 is Wp1, and the wafer processed by the other processing chamber Pk is Wpk, and the number of wafers is removed. The ratio of the number of unloaded wafers Wp1 and wafer Wpk carried out by the cassette container 134 for each processing time Tp1, Tpk corresponding to each of the processing chambers P1, Pk. Further, the wafer carry-out interval is a transfer interval between the wafer Wp1 and the wafer Wpk which are carried out by the cassette container 134 at the wafer carry-out ratio.

又,基板處理裝置具備之處理室有3個以上時,針對其他處理室Pk之各個,在和晶圓處理時間最長處理室P1間之關係下算出晶圓搬送時序。具體言之為,例如具備3個處理室P1、P2、P3之基板處理裝置,依處理室P1與處理室P2之關係算出晶圓W1 與晶圓Wp2之搬送時序。又,晶圓Wp3之搬送時序依處理室P1與處理室P3之關係算出。如上述說明,之所以依晶圓處理時間最長處理室P1與其他處理室Pk之關係算出晶圓搬送時序,乃因為以最長處理時間Tp1為基準可以容易算出各處理室處理之晶圓之最適當之搬送時序。When the number of processing chambers included in the substrate processing apparatus is three or more, the wafer transfer timing is calculated for each of the other processing chambers Pk in relation to the processing chamber P1 having the longest wafer processing time. DETAILED words, for example, includes three processing chambers P1, P2, P3 of the substrate processing apparatus, by calculating the relationship between the processing chamber P1 and P2 of the wafer processing chambers and wafer W 1 Wp2 of conveyance timing. Moreover, the transfer timing of the wafer Wp3 is calculated based on the relationship between the processing chamber P1 and the processing chamber P3. As described above, the wafer transfer timing is calculated based on the relationship between the processing chamber P1 having the longest wafer processing time and the other processing chambers Pk, because the optimum processing of the wafers processed by the respective processing chambers can be easily calculated based on the longest processing time Tp1. The transfer timing.

以下說明上述晶圓搬送時序之算出方法。晶圓搬送時序可依各處理室P1、Pk之各處理時間Tp1、Tpk如下算出。此處例如以圖1所示具備2個處理室之基板處理裝置100為例說明。基板處理裝置100之處理室140A、140B之中處理時間最長處理室設為P1,其他處理室設為P2。The method of calculating the wafer transfer timing described above will be described below. The wafer transfer timing can be calculated as follows for each processing time Tp1, Tpk of each of the processing chambers P1, Pk. Here, for example, a substrate processing apparatus 100 including two processing chambers as shown in FIG. 1 will be described as an example. Among the processing chambers 140A and 140B of the substrate processing apparatus 100, the processing chamber having the longest processing time is P1, and the other processing chambers are P2.

例如各處理室P1、P2之處理時間Tp1、Tp2之比(Tp1:Tp2)設為2:1,在處理室P1之1片晶圓Wp1之處理時間Tp1內,處理室P2可處理2片晶圓Wp2。因此,晶圓搬出數比設為1:2。此情況下,各處理室P1、處理室P2之處理結束之後次一晶圓之處理被進行,因而晶圓Wp1、Wp2之晶圓搬出間隔設為各個處理時間Tp1、Tp2。For example, the ratio of the processing times Tp1 and Tp2 of the processing chambers P1 and P2 (Tp1: Tp2) is 2:1, and the processing chamber P2 can process 2 crystals in the processing time Tp1 of the wafer Wp1 of the processing chamber P1. Round Wp2. Therefore, the wafer carry-out ratio is set to 1:2. In this case, since the processing of the next wafer after the processing of each of the processing chamber P1 and the processing chamber P2 is completed, the wafer unloading intervals of the wafers Wp1 and Wp2 are set to the respective processing times Tp1 and Tp2.

依此則,於各處理室P1、P2分別被處理之晶圓Wp1、Wp2,分別依各個處理時間Tp1、Tp2之搬出間隔1片片被搬出。此時,處理時間Tp1為處理時間Tp2之2倍,因此,在處理室P1處理之晶圓Wp1被搬出1片期間,處理室P2處理之晶圓Wp2被搬出2片。In response to this, the wafers Wp1 and Wp2 processed in the respective processing chambers P1 and P2 are carried out by one sheet at intervals of the respective processing times Tp1 and Tp2. At this time, the processing time Tp1 is twice the processing time Tp2. Therefore, while the wafer Wp1 processed in the processing chamber P1 is carried out one sheet, the wafer Wp2 processed in the processing chamber P2 is carried out by two sheets.

如上述說明,本實施形態中依據各處理室P1、Pk之各處理時間Tp1、Tpk算出來自卡匣容器134之晶圓搬送時序,因此依該搬送時序,則處理時間較長處理室P1處理之晶圓Wp1可以對應於處理時間Tp1之較長間隔由卡匣容器134被搬出之同時,處理時間較短處理室Pk處理之晶圓Wpk可以對應於處理時間Tpk之較短間隔由卡匣容器134被搬出。依此則,習知處理時間較長處理室P1之晶圓Wp1長時間待機於共通搬送室150、載入鎖定室160M、160N、定向器137,處理時間較短處理室Pk之晶圓Wpk無法由卡匣容器134被搬出之情況可以消除,可提升各處理室P1、Pk之稼動效率,可提升基板處理裝置全體之作業效率。As described above, in the present embodiment, the wafer transfer timing from the cassette container 134 is calculated based on the processing times Tp1 and Tpk of the respective processing chambers P1 and Pk. Therefore, the processing time is longer than the processing chamber P1 according to the transfer timing. The wafer Wp1 may be carried out by the cassette container 134 at a longer interval corresponding to the processing time Tp1, and the wafer Wpk processed by the processing chamber Pk may be processed by the cassette container 134 at a shorter interval corresponding to the processing time Tpk. Was moved out. According to this, it is conventional that the wafer Wp1 of the processing chamber P1 has a long processing time and waits for a long time in the common transfer chamber 150, the load lock chambers 160M, 160N, and the director 137, and the wafer Wpk of the processing chamber Pk cannot be processed for a short time. The case where the cassette container 134 is carried out can be eliminated, the efficiency of the processing chambers P1 and Pk can be improved, and the work efficiency of the entire substrate processing apparatus can be improved.

但是,搬送單元側搬送機構170僅有1個,例如圖1所示具備2個處理室之基板處理裝置100,例如圖5所示自處理室P1處理之最初之晶圓Wp1被搬出之起動時序t11起,至其他處理室P2處理之最初之晶圓Wp2被搬出之起動時序t12之間,會產生搬送單元側搬送機構170之動作週期部分之偏移時間Ts2。搬送單元側搬送機構170之動作週期係指例如以下之一連串動作。首先,藉由搬送單元側搬送機構170由卡匣容器134搬出晶圓、搬送至定向器137。之後,於定向器137存取將該晶圓與定位完成晶圓交換。之後,將定位完成晶圓搬送至載入鎖定室160 M或160 N,於載入鎖定室160 M或160 N將定位完成晶圓與處理完成晶圓交換。最後,使處理完成晶圓回至卡匣容器134。於圖5之具體例中,上述一連串動作花費之時間、亦即起動時序之偏移時間Ts2例如設為20秒。However, there is only one transport unit side transport mechanism 170. For example, the substrate processing apparatus 100 including two processing chambers as shown in FIG. 1, for example, the start timing of the wafer Wp1 being processed from the processing chamber P1 as shown in FIG. From t11, the offset time Ts2 of the operation cycle portion of the transport unit side transport mechanism 170 occurs between the start timing t12 at which the first wafer Wp2 processed by the other processing chamber P2 is carried out. The operation cycle of the transport unit side transport mechanism 170 is, for example, one of the following series of operations. First, the wafer is carried out from the cassette container 134 by the transport unit side transport mechanism 170 and transported to the director 137. Thereafter, the wafer is accessed by the director 137 to exchange the wafer with the positioning completion. Thereafter, the positioning completed wafer is transferred to the load lock chamber 160 M or 160 N, and the positioning completion wafer and the process completed wafer exchange are performed in the load lock chamber 160 M or 160 N. Finally, the process completed wafer is returned to the cassette container 134. In the specific example of FIG. 5, the time taken for the series of operations, that is, the offset time Ts2 of the start timing is set to, for example, 20 seconds.

而且,處理室P1處理之晶圓Wp1被1片片搬出之搬出間隔,與處理室P2處理之晶圓Wp2各2片被搬出之搬出間隔相等,因此,彼等搬出間隔之各區間經常產生如上述說明之起動時序之偏移時間Tsk,因此晶圓Wp1由卡匣容器134搬出之時許,與晶圓Wp2由卡匣容器134搬出之時序不會同時。因此,一此種晶圓搬送時序由卡匣容器134搬出晶圓Wp1、Wpk時,於各處理室P1、P2不會產生晶圓搬出等待引起之等待時間。Further, the transfer interval in which the wafer Wp1 processed by the processing chamber P1 is carried out by one sheet is equal to the unloading interval in which the two wafers Wp2 processed by the processing chamber P2 are carried out, and therefore, the intervals in which the transfer intervals are often generated are The offset time Tsk of the start timing described above is such that the wafer Wp1 is carried out by the cassette container 134, and the timing at which the wafer Wp2 is carried out by the cassette container 134 is not simultaneously. Therefore, when such a wafer transfer timing is carried out by the cassette container 134 from the wafers Wp1 and Wpk, the waiting time due to the wafer carry-out wait is not generated in each of the processing chambers P1 and P2.

如上述說明,處理室P1之處理時間Tp1正好為處理室Pk之處理時間Tpk之整數倍(例如n倍)時,處理室P1處理之晶圓Wp1各1片被搬出之搬出間隔,與處理室Pk處理之晶圓Wpk各上述整數倍之片數(例如n片)被搬出之搬出間隔相等,因此,彼等搬出間隔成為經常偏移上述起動時序之偏移時間Tsk之部分。因此,各處理室P1、Pk不會產生晶圓搬出等待引起之等待時間。又,此情況下之晶圓搬送時序,只需針對各處理室P1、Pk處理之晶圓Wp1、Wpk之晶圓搬出間隔分別採用各處理室P1、Pk之處理時間Tp1、Tpk即可。依此則,針對晶圓Wp1、Wpk之晶圓搬出數比可予以決定。As described above, when the processing time Tp1 of the processing chamber P1 is exactly an integral multiple (for example, n times) of the processing time Tk of the processing chamber Pk, the processing interval of each wafer Wp1 processed by the processing chamber P1 is carried out, and the processing chamber Since the number of sheets of the integral multiple of the Pk-processed wafer Wpk (for example, n pieces) is equal to the unloading interval, the carry-out interval is a part of the offset time Tsk which is often shifted from the start timing. Therefore, each of the processing chambers P1, Pk does not cause a waiting time caused by wafer carry-out waiting. Further, in the wafer transfer timing in this case, it is only necessary to use the processing times Tp1 and Tpk of the processing chambers P1 and Pk for the wafer carry-out intervals of the wafers Wp1 and Wpk processed in the respective processing chambers P1 and Pk. Accordingly, the number of wafer carry-outs for the wafers Wp1 and Wpk can be determined.

但是,實際進行晶圓處理時,多數情況下處理室P1之處理時間Tp1並非正好處理室Pk之處理時間Tpk之整數倍。此情況下,即使晶圓Wp1、Wpk之搬出產生上述說明之起動時序之偏移時間,因為晶圓Wp1、Wpk之各搬出間隔不同之故,會發生晶圓Wp1由卡匣容器134搬出之時序,與晶圓Wpk由卡匣容器134搬出之時序成為同時之情況。此情況下,於晶圓Wp1、Wp2之任一會產生晶圓搬出等待,結果,各處理室P1、P2之任一處理會產生等待時間,該部分會降低基板處理裝置全體之作業效率。However, in actual processing of the wafer, in many cases, the processing time Tp1 of the processing chamber P1 is not exactly an integral multiple of the processing time Tpk of the processing chamber Pk. In this case, even if the wafers Wp1 and Wpk are carried out to generate the offset timing of the above-described startup timing, the timing at which the wafer Wp1 is carried out by the cassette container 134 occurs because the respective wafers Wp1 and Wpk have different ejection intervals. The timing at which the wafer Wpk is carried out by the cassette container 134 is simultaneous. In this case, wafer unloading waits for any of the wafers Wp1 and Wp2, and as a result, a waiting time is generated in any of the processing chambers P1 and P2, which reduces the work efficiency of the entire substrate processing apparatus.

因此,本發明中,算出搬送時序使晶圓Wp1、Wpk之各1片或各多數片以相同基準搬出間隔Tx被由卡匣容器134搬出,依此而使晶圓Wp1、Wp2由卡匣容器134搬出時不會產生晶圓搬出等待。Therefore, in the present invention, the transport timing is calculated such that one or each of the wafers Wp1 and Wpk is carried out by the cassette container 134 at the same reference carry-out interval Tx, whereby the wafers Wp1 and Wp2 are jammed containers. 134 does not generate wafer carry-out waiting when moving out.

具體言之為,首先,依據各處理室P1、Pk之各處理時間Tp1、Tpk決定由卡匣容器134搬出晶圓Wp1、Wpk時之基準之基準搬出間隔Tx。之後,分別算出於該基準搬出間隔Tx之區間內可處理之晶圓Wp1、Wpk之最大片數m、n。Specifically, first, the reference carry-out interval Tx of the reference when the wafers Wp1 and Wpk are carried out by the cassette container 134 is determined in accordance with the processing times Tp1 and Tpk of the processing chambers P1 and Pk. Thereafter, the maximum number m and n of wafers Wp1 and Wpk that can be processed in the interval of the reference carry-out interval Tx are calculated.

此情況下,例如作為晶圓搬送時序,將晶圓Wp1、Wpk之晶圓搬出數比設為m:n,晶圓搬出間隔分別設為各處理時間Tp1、Tpk。依此則,針對處理室P1處理之晶圓Wp1,在基準搬出間隔Tx內使各m片之每一片依每一處理時間Tp1由卡匣容器134搬出之同時,針對處理室Pk處理之晶圓Wpk,在和上述相同之基準搬出間隔Tx內則使各n片之每一片依每一處理時間Tpk由卡匣容器134搬出。此情況下,晶圓Wp1、Wpk,只要基準搬出間隔Tx之各區間內各m片、n片之搬出時序為各個處理時間Tp1、Tpk之每一個時,可以連續搬出,亦可以不連續搬出。In this case, for example, as the wafer transfer timing, the wafer carry-out ratio of the wafers Wp1 and Wpk is m:n, and the wafer carry-out interval is set to each processing time Tp1, Tpk. According to this, for the wafer Wp1 processed by the processing chamber P1, each of the m pieces is carried out by the cassette container 134 at each processing time Tp1 in the reference carry-out interval Tx, and the wafer processed for the processing chamber Pk Wpk, in the same reference carry-out interval Tx as described above, causes each of the n pieces to be carried out by the cassette container 134 for each processing time Tpk. In this case, the wafers Wp1 and Wpk may be continuously carried out as long as the m-sheet and n-sheet carry-out timings in the respective sections of the reference carry-out interval Tx are each of the processing times Tp1 and Tpk, or may be discontinuously carried out.

如上述說明,於各處理室P1、Pk並行處理晶圓Wp1、Wpk時,卡匣容器134之晶圓搬送時序可配合各處理室P1、Pk之處理時間Tp1、Tpk。而且,依上述晶圓搬送時序,例如於處理室P1進行晶圓Wp1之處理時間內,可於其他處理室Pk進行處理可能之最大片數之晶圓Wpk之處理,可減少各處理室P1、Pk之處理等待時間,可提升各處理室之稼動效率,依此則,可提升基板處理裝置全體之作業效率。As described above, when the wafers Wp1 and Wpk are processed in parallel in the respective processing chambers P1 and Pk, the wafer transfer timing of the cassette container 134 can be matched with the processing times Tp1 and Tpk of the processing chambers P1 and Pk. Further, according to the wafer transfer timing, for example, during the processing time of the wafer Wp1 in the processing chamber P1, the processing of the wafer Wpk which is the largest possible number of processing in the other processing chambers Pk can be performed, and the processing chambers P1 can be reduced. The processing waiting time of Pk can improve the efficiency of the processing in each processing chamber, and accordingly, the working efficiency of the entire substrate processing apparatus can be improved.

另外,由卡匣容器134使各1片或各多數片晶圓Wp1、Wpk以相同之基準搬出間隔Tx之時序(週期)搬出,如此則,晶圓Wp1、Wpk由卡匣容器134搬出之各時序經常偏移上述起動時序之偏移時間Tsk,因此,晶圓Wp1、Wpk由卡匣容器134搬出之時序不會同時。依此則,各處理室P1、P2不會產生晶圓搬出等待引起之等待時間。Further, each of the one or each of the plurality of wafers Wp1 and Wpk is carried out at the timing (period) of the same reference carry-out interval Tx by the cassette container 134. Thus, the wafers Wp1 and Wpk are carried out by the cassette container 134. The timing is often shifted from the offset time Tsk of the above-described start timing, and therefore, the timings at which the wafers Wp1 and Wpk are carried out by the cassette container 134 are not simultaneously. Accordingly, the processing chambers P1 and P2 do not have a waiting time due to wafer carry-out waiting.

又,上述此情況下,基準搬出間隔Tx減去晶圓Wp1、Wpk之片數m、n之處理時間所得之殘餘時間,分別成為各基準搬出間隔Tx之各處理室Pk、P1之等待時間。因此,較好是決定基準搬出間隔Tx使該等待時間儘可能變少。例如以處理室P1之處理時間Tp1之m倍之Tp1.m作為基準搬出間隔Tx,則可消除處理室P1之等待時間,另外,以處理時間Tpk×n或以處理時間Tpk之(n+1)倍之Tpk.(n+1)作為基準搬出間隔Tx,則可消除處理室Pk之等待時間。In this case, the remaining time obtained by subtracting the processing times of the number of wafers Wp1 and Wpk m and n from the reference carry-out interval Tx is the waiting time of each of the processing chambers Pk and P1 of each of the reference carry-out intervals Tx. Therefore, it is preferable to determine the reference carry-out interval Tx so that the waiting time is as small as possible. For example, Tp1 which is m times the processing time Tp1 of the processing chamber P1. When m is used as the reference carry-out interval Tx, the waiting time of the processing chamber P1 can be eliminated, and the processing time Tpk×n or the (p+1) times of the processing time Tpk can be eliminated. (n+1) As the reference carry-out interval Tx, the waiting time of the processing chamber Pk can be eliminated.

如上述說明,依處理室P1、P2之處理時間Tp1、Tp2之組合,決定基準搬出間隔Tx以使處理室P1、P2之任一之等待時間成為最短,依據基準搬出間隔Tx算出來自卡匣容器134之晶圓搬送時序(例如晶圓搬出數比與晶圓搬出間隔)。依此則,可使各處理室P1、P2之等待時間最適化,更能提升基板處理裝置全體之作業效率。又,此種晶圓搬送時序之算出方法,不論處理室P1之處理時間Tp1是否正好為處理室Pk之處理時間Tpk之整數倍均可適用。As described above, the reference carry-out interval Tx is determined in accordance with the combination of the processing times Tp1 and Tp2 of the processing chambers P1 and P2 so that the waiting time of any one of the processing chambers P1 and P2 is the shortest, and the card loading container is calculated based on the reference carrying interval Tx. 134 wafer transfer timing (for example, wafer carry-out ratio and wafer carry-out interval). According to this, the waiting time of each of the processing chambers P1 and P2 can be optimized, and the work efficiency of the entire substrate processing apparatus can be improved. Moreover, the method of calculating such a wafer transfer timing can be applied regardless of whether or not the processing time Tp1 of the processing chamber P1 is exactly an integral multiple of the processing time Tpk of the processing chamber Pk.

又,基板處理裝置具備之處理室有3個以上時,針對其他每一處理室Pk分別依其和晶圓處理時間最長之處理室P1間之關係算出晶圓搬送時序。但是,此情況下,為求基準搬出間隔Tx之統一,例如最初算出其他處理室P2之晶圓搬送時序時決定基準搬出間隔Tx,則針對其他處理室P3、P4、....Pkend算出晶圓搬送時序時使用已經決定之上述基準搬出間隔Tx.又,針對其他每一處理室Pk依其和處理室P1之關係算出等待時間,使該等待時間成為最小而算出基準搬出間隔Tx亦可。Further, when there are three or more processing chambers in the substrate processing apparatus, the wafer transfer timing is calculated for each of the other processing chambers Pk in accordance with the relationship between the processing chambers P1 having the longest wafer processing time. However, in this case, in order to determine the unification of the reference carry-out interval Tx, for example, when the wafer transfer timing of the other processing chamber P2 is first calculated, the reference carry-out interval Tx is determined, and the other processing chambers P3, P4, and . . . Pkend uses the above-mentioned reference carry-out interval Tx that has been determined when calculating the wafer transfer timing. Further, the waiting time is calculated for each of the other processing chambers Pk in accordance with the relationship with the processing chamber P1, and the waiting time may be minimized to calculate the reference carrying interval Tx.

(算出晶圓搬送時序之處理之具體例)(Specific example of processing the wafer transfer timing)

以下參照圖面說明依據上述晶圓搬送時序算出方法進行晶圓搬送時序之算出之具體例。圖2為本實施形態之算出晶圓搬送時序之處理流程圖。又,算出晶圓搬送時序之處理係由例如特定程式構成,依該程式於控制部190執行。例如上述程式預先記憶於控制部190之記憶體或外部連接之主電腦裝置之硬碟裝置等記憶媒體,控制部190由上述記錄媒體讀取彼等程式執行之。A specific example of calculation of the wafer transfer timing by the wafer transfer timing calculation method will be described below with reference to the drawings. Fig. 2 is a flow chart showing the processing of calculating the wafer transfer timing in the embodiment. Further, the processing for calculating the wafer transfer timing is constituted by, for example, a specific program, and is executed by the control unit 190 in accordance with the program. For example, the program is stored in advance in a memory medium such as a memory of the control unit 190 or a hard disk device of an externally connected main computer device, and the control unit 190 reads and executes the programs from the recording medium.

如圖2所示,算出晶圓搬送時序之處理,首先於步驟S110比較各處理室之晶圓處理時間,相當於晶圓1片之處理時間最長之處理室設為P1,其他處理室設為Pk(k=2、3、....、kend)。其中kend為基板處理裝置100具備之處理室數目。例如圖1之基板處理裝置100具有2個處理室140A、140B,相當於晶圓1片之處理時間最長之處理室為處理室140A,則處理室140A設為處理室P1,處理室140B設為處理室P2。As shown in FIG. 2, the wafer transfer timing is calculated. First, the wafer processing time of each processing chamber is compared in step S110. The processing chamber corresponding to the longest processing time of one wafer is set to P1, and the other processing chambers are set to Pk (k = 2, 3, ..., kend). The kend is the number of processing chambers provided in the substrate processing apparatus 100. For example, the substrate processing apparatus 100 of FIG. 1 has two processing chambers 140A and 140B, and the processing chamber corresponding to the longest processing time of one wafer is the processing chamber 140A, and the processing chamber 140A is the processing chamber P1, and the processing chamber 140B is set. Processing chamber P2.

之後,於步驟S120設定處理室P1之相當於晶圓1片之處理時間為Tp1,設定其他處理室Pk之相當於晶圓1片之處理時間為Tpk。又,處理室P1及其他處理室Pk(k=2、3、....、kend)之序號較好是依處理時間較長處理室之順序。例如具備3個處理室之基板處理裝置,依據相當於晶圓1片之處理時間之較長順序設為處理室P1、處理室P2、處理室P3。Thereafter, in step S120, the processing time corresponding to one wafer of the processing chamber P1 is set to Tp1, and the processing time corresponding to one wafer of the other processing chamber Pk is set to Tpk. Further, the number of the processing chamber P1 and the other processing chambers Pk (k = 2, 3, ..., kend) is preferably in the order of the processing chamber having a longer processing time. For example, the substrate processing apparatus having three processing chambers is set as the processing chamber P1, the processing chamber P2, and the processing chamber P3 in the order of the processing time corresponding to one wafer.

之後,於步驟S130、S140進行算出晶圓搬送時序之處理。亦即,於步驟S130進行算出晶圓搬出數比之處理,於步驟S140進行算出晶圓搬出間隔之處理。步驟S130之算出晶圓搬出數比之處理之具體例圖式於圖3,步驟S140之算出晶圓搬出間隔之處理之具體例為圖4。圖3、圖4之處理為,在基準搬出間隔Tx可處理之晶圓Wp1之最大片數m設為1,亦即以相當於晶圓1片之處理時間最長之處理室P1之處理時間Tp1為基準而決定基準搬出間隔Tx時之處理。圖5為依據圖2-4算出之晶圓搬送時序由卡匣容器134搬出晶圓時各處理室P1、P2處理之晶圓Wp1、Wp2之處理時程之圖。於圖5,橫軸為時間,2個各處理室P1、P2處理之晶圓Wp1、Wp2之處理時程分別以棒狀圖表示。Thereafter, the processing of calculating the wafer transfer timing is performed in steps S130 and S140. That is, the process of calculating the wafer carry-out ratio is performed in step S130, and the process of calculating the wafer carry-out interval is performed in step S140. A specific example of the process of calculating the wafer carry-out ratio in step S130 is shown in FIG. 3, and a specific example of the process of calculating the wafer carry-out interval in step S140 is shown in FIG. 3 and 4, the maximum number m of wafers Wp1 that can be processed at the reference carry-out interval Tx is set to 1, that is, the processing time Tp1 of the processing chamber P1 having the longest processing time corresponding to one wafer. The process at the time of the reference carry-out interval Tx is determined for the reference. FIG. 5 is a view showing the processing time of the wafers Wp1 and Wp2 processed by the processing chambers P1 and P2 when the wafer transfer timing calculated by FIG. 2-4 is carried out by the cassette container 134. In FIG. 5, the horizontal axis represents time, and the processing time periods of the wafers Wp1 and Wp2 processed by the two processing chambers P1 and P2 are respectively shown in a bar graph.

(算出晶圓搬出數比之處理之具體例)(Specific example of processing the ratio of wafer carry-out ratio)

首先,參照圖3說明算出晶圓搬出數比之處理之具體例。如圖3所示,於步驟S210,以相當於晶圓1片之處理時間最長之處理室P1之處理時間Tp1設為基準搬出間隔Tx時,於該基準搬出間隔Tx之區間內(於此為處理時間Tp1內)算出其他處理室Pk可處理之晶圓Wpk之最大片數n。於最長處理時間Tp1內,由卡匣容器134搬出其他處理室Pk可處理之片數之晶圓Wpk,依此則,處理室Pk之等待時間可以盡量減少。First, a specific example of the process of calculating the wafer carry-out ratio will be described with reference to FIG. As shown in FIG. 3, in step S210, when the processing time Tp1 of the processing chamber P1 having the longest processing time corresponding to one wafer is used as the reference carrying interval Tx, it is within the interval of the reference carrying interval Tx (herein In the processing time Tp1, the maximum number n of wafers Wpk that can be processed by the other processing chamber Pk is calculated. In the longest processing time Tp1, the number of wafers Wpk that can be processed by the other processing chamber Pk is carried out by the cassette container 134, and accordingly, the waiting time of the processing chamber Pk can be minimized.

具體言之為,例如使以下之式(1-1)與(1-2)同時成立而算出晶圓Wpk之片數n。又,於以下之式(1-1)與(1-2)中,Tp1為處理室P1之相當於1片晶圓Wp1之處理時間,Tpk為其他處理室Pk之相當於1片晶圓Wpk之處理時間,n為滿足n≧1之整數,k為滿足k≧2之整數,又,以下之式(1-1)與(1-2)之中「.」表示乘法之記號(以下相同)。Specifically, for example, the following formulas (1-1) and (1-2) are simultaneously established to calculate the number n of wafers Wpk. Further, in the following formulae (1-1) and (1-2), Tp1 is the processing time corresponding to one wafer Wp1 of the processing chamber P1, and Tpk is equivalent to one wafer Wpk of the other processing chamber Pk. For the processing time, n is an integer satisfying n≧1, k is an integer satisfying k≧2, and "." in the following formulas (1-1) and (1-2) indicates a sign of multiplication (the same applies hereinafter) ).

Tp1≧Tpk.n (1-1) Tp1<Tpk.(n+1) (1-2)Tp1≧Tpk. n (1-1) Tp1<Tpk. (n+1) (1-2)

以下之步驟S220-S280,決定處理室P1之處理時間Tp1與處理室Pk之處理時間Tpk.(n+1)之中等待時間較短者作為基準搬出間隔Tx,算出各處理室P1、Pk處理之晶圓Wp1、Wpk之晶圓搬出數比.如上述說明,藉由採用處理室P1、Pk之等待時間較短者作為基準搬出間隔Tx,則針對處理室P1、Pk全部可縮短處理之等待時間。依此則,可實現基板處理裝置全體之等待時間之最適化。In the following steps S220-S280, the processing time Tp1 of the processing chamber P1 and the processing time Tpk of the processing chamber Pk are determined. The shorter waiting time among (n+1) is used as the reference carry-out interval Tx, and the wafer carry-out ratio of the wafers Wp1 and Wpk processed in each of the processing chambers P1 and Pk is calculated. As described above, by using the shorter waiting time of the processing chambers P1 and Pk as the reference carry-out interval Tx, the processing waiting time can be shortened for all of the processing chambers P1 and Pk. According to this, it is possible to optimize the waiting time of the entire substrate processing apparatus.

具體言之為,於步驟S220,以處理室P1之處理時間Tp1設為基準搬出間隔Tx,依據以下之式(1-3)算出其他處理室Pk之等待時間Twk,於步驟S230,以處理室Pk之處理時間Tpk.(n+1)設為基準搬出間隔Tx,依據以下之式(1-4)算出處理室P1之等待時間Tw1。Specifically, in step S220, the processing time Tp1 of the processing chamber P1 is set as the reference carrying interval Tx, and the waiting time Twk of the other processing chamber Pk is calculated according to the following formula (1-3). In step S230, the processing chamber is used. Pk processing time Tpk. (n+1) is the reference carry-out interval Tx, and the waiting time Tw1 of the processing chamber P1 is calculated based on the following formula (1-4).

Twk=Tp1-Tpk.n (1-3) Tw1=Tpk.(n+1)-Tp1 (1-4)Twk=Tp1-Tpk. n (1-3) Tw1=Tpk. (n+1)-Tp1 (1-4)

於步驟S240比較各等待時間Tw1、Twk,坢斷哪一等待時間腳短。具體言之為,例如判斷等待時間Twk是否為等待時間Tw1以下(Twk≦Tw1)。於步驟S240判斷Twk≦Tw1時,亦即等待時間Twk較短(或等待時間Tw1、Twk相等時),於步驟S250如以下之式(1-5)所示將各晶圓Wp1、Wpk之基準搬出間隔Tx決定為處理室P1之處理時間Tp1,於步驟S260將各晶圓Wp1、Wpk之晶圓搬出數比(Wp1:Wpk)設為1:n。In step S240, the waiting times Tw1 and Twk are compared, and which waiting time is short. Specifically, for example, it is determined whether or not the waiting time Twk is equal to or shorter than the waiting time Tw1 (Twk ≦ Tw1). When it is determined in step S240 that Twk ≦ Tw1, that is, when the waiting time Twk is short (or the waiting times Tw1 and Twk are equal), the reference of each of the wafers Wp1 and Wpk is performed in step S250 as shown in the following formula (1-5). The carry-out interval Tx is determined as the processing time Tp1 of the processing chamber P1, and in step S260, the wafer carry-out ratio (Wp1: Wpk) of each of the wafers Wp1 and Wpk is set to 1:n.

Tx=Tp1=Tpk.n+Twk (1-5)Tx=Tp1=Tpk. n+Twk (1-5)

依此獲得之基準搬出間隔Tx(=Tp1=Tpk.n+Twk),在該每一區間,處理室P1處理之晶圓Wp1被搬出1片,處理室P1之等待時間為0之同時,處理室Pk處理之晶圓Wpk被搬出n片,處理室Pk之等待時間為Twk。The reference carry-out interval Tx (=Tp1=Tpk.n+Twk) obtained in this way, in each of the sections, the wafer Wp1 processed by the processing chamber P1 is carried out one piece, and the waiting time of the processing chamber P1 is 0, and the processing chamber Pk The processed wafer Wpk is carried out by n pieces, and the waiting time of the processing chamber Pk is Twk.

相對於此,於S240判斷非Twk≦Tw1時,亦即等待時間Tw1較短時,於步驟S270如以下之式(1-6)所示將各晶圓Wp1、Wpk之基準搬出間隔Tx決定為處理室Pk之Tpk.(n+1),於步驟S280將各晶圓Wp1、Wpk之晶圓搬出數比(Wp1:Wpk)設為1:n+1。On the other hand, when the non-Twk ≦ Tw1 is determined in S240, that is, when the waiting time Tw1 is short, the reference carry-out interval Tx of each of the wafers Wp1 and Wpk is determined as the following equation (1-6) in step S270. Processing room Pk Tpk. (n+1), in step S280, the wafer carry-out ratio (Wp1: Wpk) of each of the wafers Wp1 and Wpk is set to 1:n+1.

Tx=Tp1+Tw1=Tpk.(n+1) (1-6)Tx=Tp1+Tw1=Tpk. (n+1) (1-6)

依此獲得之基準搬出間隔Tx(=Tp1+Tw1=Tpk.(n+1)),在該每一區間,處理室P1處理之晶圓Wp1被搬出1片,處理室P1之等待時間為Tw1之同時,處理室Pk處理之晶圓Wpk被搬出n+1片,處理室Pk之等待時間為0。又,圖3之處理所得之基準搬出間隔Tx及晶圓搬出數比等倍記憶於控制部190之記憶體等。The reference carry-out interval Tx (=Tp1+Tw1=Tpk.(n+1)) obtained in this way, in each of the sections, the wafer Wp1 processed by the processing chamber P1 is carried out one piece, and the waiting time of the processing chamber P1 is Tw1, and processing is performed. The wafer Wk processed by the chamber Pk is carried out out of n+1 sheets, and the waiting time of the processing chamber Pk is zero. Moreover, the reference carry-out interval Tx and the number of wafer carry-outs obtained by the process of FIG. 3 are stored in the memory of the control unit 190, and the like.

(算出晶圓搬出間隔之處理之具體例)(Specific example of processing the wafer carry-out interval)

以下參照圖4說明算出晶圓搬出間隔之處理之具體例,於此係依據圖3所示算出晶圓搬出數比之處理之而決定之基準搬出間隔Tx產生之晶圓搬出數比,算出實際由卡匣容器134搬出晶圓時之各晶圓Wp1、Wpk之晶圓搬出間隔。Hereinafter, a specific example of the process of calculating the wafer carry-out interval will be described with reference to FIG. 4, and the ratio of the number of wafer carry-outs generated by the reference carry-out interval Tx determined by the process of calculating the wafer carry-out ratio is calculated as shown in FIG. The wafer carry-out interval of each of the wafers Wp1 and Wpk when the wafer is carried out by the cassette container 134.

具體言之為,首先,如圖4所示,於步驟S310由控制部190之記憶體等取出圖3之處理所算出之晶圓搬出數比(Wp1:Wpk),判斷晶圓搬出數比(Wp1:Wpk)為1:n或1:n+1。Specifically, as shown in FIG. 4, in step S310, the wafer carry-out ratio (Wp1: Wpk) calculated by the process of FIG. 3 is taken out from the memory of the control unit 190, and the number of wafer carry-out ratios is determined ( Wp1:Wpk) is 1:n or 1:n+1.

於步驟S310判斷晶圓搬出數比(Wp1:Wpk)為1:n時,於步驟S320針對處理室P1處理之晶圓Wp1之晶圓搬出間隔,設為在基準搬出間隔Tx搬出各1片之間隔。依此則,晶圓Wp1例如在基準搬出間隔Tx被1片片,亦即於每一處理時間Tp1由卡匣容器134被1片片搬出。此情況下,基準搬出間隔Tx成為處理室P1之處理時間Tp1,因此例如圖5(a)上側之處理時程所示,處理室P1之等待時間為0,晶圓Wp1被連續處理。When it is determined in step S310 that the wafer carry-out ratio (Wp1:Wpk) is 1:n, the wafer carry-out interval of the wafer Wp1 processed in the processing chamber P1 in step S320 is assumed to be carried out at the reference carry-out interval Tx. interval. In response to this, the wafer Wp1 is carried out by one sheet at the reference carry-out interval Tx, that is, by one of the cassette containers 134 at each processing time Tp1. In this case, since the reference carry-out interval Tx is the processing time Tp1 of the processing chamber P1, for example, as shown in the processing time of the upper side of FIG. 5(a), the waiting time of the processing chamber P1 is 0, and the wafer Wp1 is continuously processed.

之後,於步驟S330,針對處理室Pk處理之晶圓Wpk之晶圓搬出間隔,設為在基準搬出間隔Tx各n片依每一處理時間Tpk各1片搬出之間隔。依此則,晶圓Wpk例如在基準搬出間隔Tx之每一區間各n片連續由卡匣容器134搬出之同時,僅有等待時間Twk之搬出等待。亦即,n片連續由卡匣容器134搬出之後僅等待等待時間Twk之後次一n片連續由卡匣容器134再度被搬出。此情況下,基準搬出間隔Tx成為處理室Pk之處理時間Tpk.n+Twk,因此例如圖5(a)下側之處理時程所示,處理室Pk在基準搬出間隔Tx之每一區間存在等待時間Twk之狀態下針對各n片晶圓Wpk施予連續處理.又,圖5(a)為k=2,n=3之具體例。Thereafter, in step S330, the wafer unloading interval of the wafer Wpk processed in the processing chamber Pk is set to an interval at which each n pieces of the reference carry-out interval Tx are carried out for each processing time Tpk. In this case, for example, the wafer Wpk is continuously carried out by the cassette container 134 in each of the sections of the reference carry-out interval Tx, and only the waiting time Twk is carried out. That is, after the n pieces are continuously carried out by the cassette container 134, only one waiting time Twk is waited for, and the next n pieces are continuously carried out again by the cassette container 134. In this case, the reference carry-out interval Tx becomes the processing time Tpk of the processing chamber Pk. n+Twk, for example, as shown in the processing time of the lower side of FIG. 5(a), the processing chamber Pk performs continuous processing for each n wafer Wpk in a state where the waiting time Twk exists in each section of the reference carrying interval Tx. Further, Fig. 5(a) shows a specific example of k = 2 and n = 3.

相對於此,步驟S310判斷晶圓搬出數比(Wp1:Wpk)為1:n+1時,於步驟S340針對處理室P1處理之晶圓Wp1之晶圓搬出間隔,設為在基準搬出間隔Tx搬出各1片之間隔。依此則,晶圓Wp1例如在基準搬出間隔Tx之每一區間各1片由卡匣容器134被搬出之同時,存在等待時間Tw1之搬出等待。亦即,由卡匣容器134搬出1片之後等待等待時間Tw1之後次一片再度由卡匣容器134搬出。此情況下,基準搬出間隔Tx成為處理室P1之處理時間Tp1+Ww1,因此例如圖5(b)上側之處理時程所示,在處理室P1在基準搬出間隔Tx之每一區間存在等待時間Tw1之狀態下使各1片晶圓Wp1被處理。On the other hand, when it is determined in step S310 that the wafer carry-out ratio (Wp1:Wpk) is 1:n+1, the wafer carry-out interval of the wafer Wp1 processed in the processing chamber P1 in step S340 is carried out at the reference carry-out interval Tx. 1 piece interval. In this case, for example, each of the wafers Wp1 is carried out by the cassette container 134 in each of the intervals of the reference carry-out interval Tx, and the waiting time Tw1 is waited for. That is, after one sheet is taken out from the cassette container 134, the waiting time Tw1 is waited for, and the next sheet is again carried out by the cassette container 134. In this case, since the reference carry-out interval Tx is the processing time Tp1+Ww1 of the processing chamber P1, for example, as shown in the processing time of the upper side of FIG. 5(b), there is a waiting time Tw1 in each section of the processing chamber P1 in the reference carrying-out interval Tx. Each wafer Wp1 is processed in the state.

之後,於步驟S350,針對處理室Pk處理之晶圓Wpk之晶圓搬出間隔,設為在基準搬出間隔Tx各n+1片依每一處理時間Tpk各1片搬出之間隔。依此則,晶圓Wpk例如在基準搬出間隔Tx之每一區間各n+1片連續由卡匣容器134搬出,此情況下,基準搬出間隔Tx成為處理室Pk之處理時間Tpk.(n+1),因此例如圖5(b)下側之處理時程所示,處理室Pk在基準搬出間隔Tx之每一區間於等待時間0之狀態下連續處理各n+1片晶圓Wpk。又,圖5(b)為k=2,n=2之具體例。Thereafter, in step S350, the wafer unloading interval of the wafer Wpk processed in the processing chamber Pk is set to be an interval at which n+1 sheets are moved one by one for each processing time Tpk at the reference carry-out interval Tx. In this case, the wafer Wpk is continuously carried out by the cassette container 134 in each of the intervals of the reference carry-out interval Tx. For example, the reference carry-out interval Tx becomes the processing time Tpk of the processing chamber Pk. (n+1), for example, as shown in the processing time of the lower side of FIG. 5(b), the processing chamber Pk continuously processes each n+1 wafer Wpk in the state of the waiting time 0 in each section of the reference carry-out interval Tx. Further, Fig. 5(b) shows a specific example of k = 2 and n = 2.

圖3、4所示處理算出之晶圓搬出數比與晶圓搬出間隔被記憶於控制部190之記憶體。實際近。實際進行晶圓處理時,藉由控制部190由記憶體取得圖3、4獲得之晶圓搬出數比與晶圓搬出間隔,依該晶圓搬出數比與晶圓搬出間隔控制搬送單元側搬送機構170,使晶圓Wp1、Wpk分別由卡匣容器134搬出。The wafer carry-out ratio calculated by the processing shown in FIGS. 3 and 4 and the wafer carry-out interval are stored in the memory of the control unit 190. Actually close. When the wafer processing is actually performed, the control unit 190 obtains the wafer carry-out ratio and the wafer carry-out interval obtained from the memory in FIGS. 3 and 4, and controls the transport unit side transfer according to the wafer carry-out ratio and the wafer carry-out interval. The mechanism 170 causes the wafers Wp1 and Wpk to be carried out by the cassette container 134, respectively.

依此則,例如處理時間較長處理室P1處理之晶圓Wp1依其之處理時間Tp1以較長間隔由卡匣容器134搬出,處理時間較短處理室Pk處理之晶圓Wpk依其之處理時間Tpk以較短間隔由卡匣容器134搬出。如此則,習知處理時間較長處理室P1處理之晶圓Wp1長時間待機於共通搬送室150、載入鎖定室160 M、160 N、定向器137等,處理時間較短處理室Pk處理之晶圓Wpk無法由卡匣容器134搬出之情況可以消除。因此,可提升各處理室P1、Pk之稼動效率,可提升基板處理裝置全體之作業效率。According to this, for example, the wafer Wp1 processed by the processing chamber P1 is processed by the cassette container 134 at a longer interval according to the processing time Tp1, and the wafer Wpk processed by the processing chamber Pk is processed accordingly. The time Tpk is carried out by the cassette container 134 at a short interval. In this case, the wafer Wp1 processed by the processing chamber P1 for a long time is reserved for the long time in the common transfer chamber 150, the load lock chambers 160 M, 160 N, the director 137, etc., and the processing time is shorter. The case where the wafer Wpk cannot be carried out by the cassette container 134 can be eliminated. Therefore, the efficiency of the processing of each of the processing chambers P1 and Pk can be improved, and the work efficiency of the entire substrate processing apparatus can be improved.

又,針對晶圓Wp1、Wpk分別以相同基準搬出間隔Tx之時序(週期)由卡匣容器134搬出,因此,晶圓Wp1、Wpk之基準搬出間隔Tx之各區間僅偏移最初處理之晶圓Wp1、Wpk被搬出時產生之起動時序之偏移時間Tsk。因此,晶圓Wp1、Wpk被搬出之時序不會同時,又,圖3、4之處理,不僅適用處理室P1之處理時間Tp1並非處理室Pk之處理時間Tpk之整數倍之情況,如圖5(c)之處理時程所示,亦適用處理室P1之處理時間Tp1正好為處理室Pk之處理時間Tpk之整數倍之情況。Further, since the wafers Wp1 and Wpk are carried out by the cassette 134 at the timing (period) of the same reference carry-out interval Tx, the respective intervals of the reference carry-out interval Tx of the wafers Wp1 and Wpk are shifted only from the wafer to be processed first. The offset time Tsk of the start timing generated when Wp1 and Wpk are carried out. Therefore, the timings at which the wafers Wp1 and Wpk are carried out are not simultaneous, and the processing of FIGS. 3 and 4 is not only applicable to the case where the processing time Tp1 of the processing chamber P1 is not an integral multiple of the processing time Tpk of the processing chamber Pk, as shown in FIG. 5. The processing time of (c) is also applied to the case where the processing time Tp1 of the processing chamber P1 is exactly an integral multiple of the processing time Tpk of the processing chamber Pk.

(具備2個處理室之基板處理裝置之適用之情況)(Application of a substrate processing apparatus having two processing chambers)

以下針對圖1所示具備2個處理室之基板處理裝置進行圖2-4所示算出晶圓搬送時序之處理,依圖5以具體數值說明。於圖5(a)表示各處理室140A、140B之相當於晶圓1片之處理時間為200秒、60秒之情況,圖5(b)表示200秒、70秒之情況,圖5(c)表示200秒、50秒之情況。彼等任一情況下處理時間最長之處理室為處理室140A,因此依圖2之步驟S110、S120,處理室140A為處理室P1,其處理時間為Tp1,其他處理室140B為處理室P2,其處理時間為Tp2。Hereinafter, the processing for calculating the wafer transfer timing shown in FIGS. 2-4 will be described with respect to the substrate processing apparatus having two processing chambers as shown in FIG. 1, and will be described with reference to FIG. Fig. 5(a) shows a case where the processing time corresponding to one wafer of each of the processing chambers 140A and 140B is 200 seconds and 60 seconds, and Fig. 5(b) shows the case of 200 seconds and 70 seconds, and Fig. 5(c) ) indicates 200 seconds, 50 seconds. In any case, the processing chamber having the longest processing time is the processing chamber 140A. Therefore, according to steps S110 and S120 of FIG. 2, the processing chamber 140A is the processing chamber P1, the processing time is Tp1, and the other processing chambers 140B are the processing chamber P2. Its processing time is Tp2.

依圖2之步驟S130(例如圖3所示處理)及步驟S140(例如圖4所示處理)算出搬送時序時,係依據各處理室之處理時間,因此分別以圖5(a)、(b)、(c)說明。When the transfer timing is calculated in accordance with step S130 (for example, the processing shown in FIG. 3) and step S140 (for example, the processing shown in FIG. 4) of FIG. 2, the processing time is determined by each processing chamber, and therefore, FIG. 5(a) and FIG. ), (c) Description.

首先說明圖5(a)之具體例。該具體例為,將基準搬出間隔Tx設為處理時間Tp1使處理室等待時間變短者。圖5(a),處理室P1之處理時間Tp1為200秒,處理室P2之處理時間Tp2為60秒,因此,依圖3之步驟S210,設為k=2代入式(1-1)與(1-2),滿足彼等之式者為n=3。First, a specific example of Fig. 5(a) will be described. In this specific example, the processing room waiting time is shortened by setting the reference carry-out interval Tx to the processing time Tp1. 5(a), the processing time Tp1 of the processing chamber P1 is 200 seconds, and the processing time Tp2 of the processing chamber P2 is 60 seconds. Therefore, according to step S210 of FIG. 3, k=2 is substituted into the equation (1-1) and (1-2), satisfying those of the formula is n=3.

之後,依步驟S220及步驟S230,設為k=2分別將數值代入式(1-3)與(1-4),則處理室P2之等待時間Tw2=200-60×3=20秒,處理室P1之等待時間Tw1=60×4-200=40秒。處理室P2之等待時間Tw2(=20秒)小於處理室P1之等待時間Tw1(=40秒),因此依步驟S240、步驟S240,步驟S260,晶圓Wp1、Wp2之基準搬出間隔Tx成為處理室P1之處理時間Tp1(=200秒),處理室P1處理之晶圓Wp1、處理室P2處理之晶圓Wp2之晶圓搬出數比(Wp1:Wp2)為1:3。Then, according to steps S220 and S230, k=2 is substituted into the equations (1-3) and (1-4), respectively, and the waiting time Tw2 of the processing chamber P2 is 200-60×3=20 seconds. The waiting time of the chamber P1 is Tw1 = 60 × 4 - 200 = 40 seconds. The waiting time Tw2 (=20 seconds) of the processing chamber P2 is smaller than the waiting time Tw1 (=40 seconds) of the processing chamber P1. Therefore, in step S240, step S240, step S260, the reference carrying interval Tx of the wafers Wp1 and Wp2 becomes the processing chamber. The processing time Tp1 (=200 seconds) of P1, the wafer Wp1 processed by the processing chamber P1, and the wafer carry-out ratio (Wp1:Wp2) of the wafer Wp2 processed by the processing chamber P2 are 1:3.

之後,依步驟S310、S320、S330,處理室P1處理之晶圓Wp1之晶圓搬出間隔設為,在基準搬出間隔Tx(=200秒)內各1片被搬出之間隔。處理室P2處理之晶圓Wp2之晶圓搬出間隔設為,在基準搬出間隔Tx(=200秒)內各3片、於每一處理時間Tp2各1片被搬出之間隔。Thereafter, in accordance with steps S310, S320, and S330, the wafer carry-out interval of the wafer Wp1 processed by the processing chamber P1 is set to be an interval at which one sheet is carried out in the reference carry-out interval Tx (=200 seconds). The wafer carry-out interval of the wafer Wp2 processed in the processing chamber P2 is set to be three sheets at the reference carry-out interval Tx (=200 seconds) and one sheet for each processing time Tp2 to be carried out.

藉由上述晶圓搬送時序由卡匣容器134搬出各晶圓Wp1、Wp2,則各各處理室P1、P2之處理時程如圖5(a)所示。此情況下,於處理室P1等待時間為0,晶圓Wp1被連續處理,另外,於處理室P2,在每一基準搬出間隔Tx(=200秒)存在等待時間Tw2(=20秒)而將晶圓Wp2各3片連續處理。When the respective wafers Wp1 and Wp2 are carried out from the cassette container 134 by the above-described wafer transfer timing, the processing time of each of the processing chambers P1 and P2 is as shown in FIG. 5(a). In this case, the waiting time in the processing chamber P1 is 0, the wafer Wp1 is continuously processed, and in the processing chamber P2, there is a waiting time Tw2 (= 20 seconds) for each reference carrying interval Tx (= 200 seconds). Three wafers of wafer Wp2 are processed continuously.

接著,說明圖5(b)之具體例。該具體例為,將基準搬出間隔Tx設為處理室P2之處理時間Tp2.(n+1)使處理室等待時間變短者。於圖5(b),處理室P1之處理時間Tp1為200秒,處理室P2之處理時間Tp2為70秒,因此,依圖3之步驟S210,設為k=2代入式(1-1)與(1-2),滿足彼等之式者為n=2。Next, a specific example of FIG. 5(b) will be described. In this specific example, the reference carry-out interval Tx is set as the processing time Tp2 of the processing chamber P2. (n+1) The processing room waiting time is shortened. In FIG. 5(b), the processing time Tp1 of the processing chamber P1 is 200 seconds, and the processing time Tp2 of the processing chamber P2 is 70 seconds. Therefore, according to step S210 of FIG. 3, k=2 is substituted into the equation (1-1). And (1-2), satisfying those of the formula is n=2.

之後,依步驟S220及步驟S230,設為k=2分別將數值代入式(1-3)與(1-4),則處理室P2之等待時間Tw2=200-70×2=60秒,處理室P1之等待時間Tw1=70×3-200=10秒。處理室P1之等待時間Tw1(=10秒)小於處理室P2之等待時間Tw2(=60秒),因此依步驟S240、步驟S270,步驟S280,晶圓Wp1、Wp2之基準搬出間隔Tx成為處理室P2之處理時間70秒×3(=210秒),晶圓Wp1、晶圓Wp2之晶圓搬出數比(Wp1:Wp2)為1:3。Then, according to step S220 and step S230, it is assumed that k=2 is substituted into equations (1-3) and (1-4), respectively, and the waiting time Tw2 of the processing chamber P2 is 200-70×2=60 seconds, and the processing is performed. The waiting time of the chamber P1 is Tw1 = 70 × 3 - 200 = 10 seconds. The waiting time Tw1 (=10 seconds) of the processing chamber P1 is smaller than the waiting time Tw2 (=60 seconds) of the processing chamber P2. Therefore, in step S240, step S270, and step S280, the reference carrying interval Tx of the wafers Wp1 and Wp2 becomes the processing chamber. The processing time of P2 is 70 seconds × 3 (= 210 seconds), and the wafer carry-out ratio (Wp1: Wp2) of wafer Wp1 and wafer Wp2 is 1:3.

之後,依圖4之步驟S310、S340、S350,處理室P1處理之晶圓Wp1之晶圓搬出間隔設為,在基準搬出間隔Tx(=200秒)內各1片被搬出之間隔。處理室P2處理之晶圓Wp2之晶圓搬出間隔設為,在基準搬出間隔Tx(=200秒)內各3片、於每一處理時間Tp2(=70秒)各1片被搬出之間隔。Thereafter, in accordance with steps S310, S340, and S350 of FIG. 4, the wafer carry-out interval of the wafer Wp1 processed by the processing chamber P1 is set to be an interval at which each sheet is carried out in the reference carry-out interval Tx (=200 seconds). The wafer carry-out interval of the wafer Wp2 processed in the processing chamber P2 is an interval at which each of the three sheets is carried out in the standard carry-out interval Tx (=200 seconds) at each processing time Tp2 (=70 seconds).

藉由上述晶圓搬送時序由卡匣容器134搬出各晶圓Wp1、Wp2,則各處理室P1、P2之處理時程如圖5(b)所示。此情況下,於處理室P1在每一基準搬出間隔Tx內以等待時間Tw1連續處理晶圓Wp1。另外,於處理室P2,在每一基準搬出間隔Tx(=200秒)內以等待時間0連續處理3片晶圓Wp2。When the respective wafers Wp1 and Wp2 are carried out from the cassette container 134 by the wafer transfer timing described above, the processing time of each of the processing chambers P1 and P2 is as shown in FIG. 5(b). In this case, the wafer Wp1 is continuously processed in the processing chamber P1 by the waiting time Tw1 in each of the reference carry-out intervals Tx. Further, in the processing chamber P2, the three wafers Wp2 are continuously processed by the waiting time 0 in each of the reference carry-out intervals Tx (= 200 seconds).

接著,說明圖5(c)之具體例。該具體例為,處理室P1之處理時間Tp1相等於處理室P2之處理時間Tp2.n者。此情況下,處理室P2之處理時間Tp2.N(或處理室P1之處理時間Tp1)設為基準搬出間隔Tx,依此則,各處理室之等待時間均成為0。於圖5(c),處理室P1之處理時間Tp1為200秒,處理室P2之處理時間Tp2為0秒,依圖3之步驟S210,設為k=2代入式(1-1)與(1-2),滿足彼等之式者為n=4。Next, a specific example of FIG. 5(c) will be described. In this specific example, the processing time Tp1 of the processing chamber P1 is equal to the processing time Tp2 of the processing chamber P2. n. In this case, the processing time of the processing chamber P2 is Tp2. N (or the processing time Tp1 of the processing chamber P1) is set as the reference carry-out interval Tx, and accordingly, the waiting time of each processing chamber becomes zero. In FIG. 5(c), the processing time Tp1 of the processing chamber P1 is 200 seconds, and the processing time Tp2 of the processing chamber P2 is 0 seconds. According to the step S210 of FIG. 3, it is assumed that k=2 is substituted into the equation (1-1) and 1-2), satisfying those of the formula is n=4.

之後,依步驟S220及步驟S230,設為k=2分別將數值代入式(1-3)與(1-4),則處理室P2之等待時間Tw2=200-50×4=0秒,處理室P1之等待時間Tw1=50×5-200=50秒。處理室P1之等待時間Tw1(=0秒)小於處理室P2之等待時間Tw2(=50秒),因此依步驟S240、步驟S270,步驟S280,晶圓Wp1、Wp2之基準搬出間隔Tx成為處理室P2之處理時間Tp2.n(=200秒),晶圓Wp1、晶圓Wp2之晶圓搬出數比(Wp1:Wp2)為1:4。Then, according to step S220 and step S230, it is assumed that k=2 is substituted into equations (1-3) and (1-4), respectively, and the waiting time Tw2 of the processing chamber P2 is 200-50×4=0 seconds. The waiting time of the chamber P1 is Tw1 = 50 × 5 - 200 = 50 seconds. The waiting time Tw1 (=0 seconds) of the processing chamber P1 is smaller than the waiting time Tw2 (= 50 seconds) of the processing chamber P2. Therefore, in step S240, step S270, step S280, the reference carrying interval Tx of the wafers Wp1 and Wp2 becomes the processing chamber. P2 processing time Tp2. n (=200 seconds), the wafer carry-out ratio (Wp1: Wp2) of the wafer Wp1 and the wafer Wp2 is 1:4.

之後,依圖4之步驟S310、S340、S350,處理室P1處理之晶圓Wp1之晶圓搬出間隔設為,在基準搬出間隔Tx(=200秒)內1片被搬出之間隔。處理室P2處理之晶圓Wp2之晶圓搬出間隔設為,在基準搬出間隔Tx(=200秒)內4片、於每一處理時間Tp2(=50秒)內1片被搬出之間隔。Thereafter, in accordance with steps S310, S340, and S350 of FIG. 4, the wafer carry-out interval of the wafer Wp1 processed by the processing chamber P1 is set to be an interval at which one sheet is carried out in the reference carry-out interval Tx (=200 seconds). The wafer carry-out interval of the wafer Wp2 processed in the processing chamber P2 is an interval in which one sheet is carried out in the reference carry-out interval Tx (=200 seconds) and one sheet is carried out in each processing time Tp2 (=50 seconds).

藉由上述晶圓搬送時序由卡匣容器134搬出各晶圓Wp1、Wp2,則各處理室P1、P2之處理時程如圖5(c)所示。此情況下,於處理室P1在每一基準搬出間隔Tx內以等待時間0連續處理晶圓Wp1。另外,於處理室P2,在每一基準搬出間隔Tx(=200秒)內以等待時間0連續處理4片晶圓Wp2。When the respective wafers Wp1 and Wp2 are carried out from the cassette container 134 by the above-described wafer transfer timing, the processing time of each of the processing chambers P1 and P2 is as shown in FIG. 5(c). In this case, the wafer Wp1 is continuously processed in the processing chamber P1 by the waiting time 0 in each of the reference carry-out intervals Tx. Further, in the processing chamber P2, four wafers Wp2 are continuously processed by the waiting time 0 in each of the reference carry-out intervals Tx (= 200 seconds).

(具備3個以上處理室之基板處理裝置之適用之情況)(Application of a substrate processing apparatus having three or more processing chambers)

以下針對具備3個以上處理室之基板處理裝置進行圖2-4所示算出晶圓搬送時序之處理加以說明。圖6為具備3或4個處理室之基板處理裝置之概略構成。圖6之基板處理裝置200,係和圖1之基板處理裝置100大略相同之構成,另外將室140C、140D介由柵閥144C、144D連接於共通搬送室150之兩側部者。於此,例如室140C設為進行晶圓處理之處理室之構成之同時,室140D設為進行處理完成晶圓之處理結果之測定等各種檢測的檢測室之構成,成為具備3個處理室之基板處理裝置200,室140C、140D同時設為進行晶圓處理之處理室時,成為具備4個處理室之基板處理裝置200。又,於圖6之基板處理裝置200,另外在構成搬送室130之斷面大略多角形狀之長邊的一側面設置卡匣台132C,可載置另一卡匣容器134C。例如於卡匣容器134C收納作為處理室構成之室140C或140D處理之晶圓亦可。Hereinafter, the processing for calculating the wafer transfer timing shown in FIGS. 2-4 will be described with respect to the substrate processing apparatus including three or more processing chambers. Fig. 6 is a schematic configuration of a substrate processing apparatus having three or four processing chambers. The substrate processing apparatus 200 of FIG. 6 has a configuration substantially the same as that of the substrate processing apparatus 100 of FIG. 1, and the chambers 140C and 140D are connected to both sides of the common transfer chamber 150 via the gate valves 144C and 144D. Here, for example, the chamber 140C is configured as a processing chamber for performing wafer processing, and the chamber 140D is configured as a detection chamber for performing various types of detection such as measurement of the processing result of the processed wafer, and is provided with three processing chambers. In the substrate processing apparatus 200, when the chambers 140C and 140D are simultaneously used as processing chambers for wafer processing, the substrate processing apparatus 200 is provided with four processing chambers. Further, in the substrate processing apparatus 200 of Fig. 6, a cassette table 132C is provided on one side surface of the long side of the polygonal shape of the cross section of the transfer chamber 130, and another cassette container 134C can be placed. For example, the wafer processed by the chamber 140C or 140D which is a processing chamber may be accommodated in the cassette container 134C.

首先,針對圖6所示基板處理裝置200具備3個處理室之基板處理裝置之構成,進行圖2-4所示算出晶圓搬送時序之處理,依圖7以具體數值說明。圖7表示依據圖2-4算出之搬送時序被處理的各處理室之晶圓處理時程。圖7之橫軸為時間,3個處理室P1、P2、P3處理之晶圓之處理時程分別以棒狀圖表示。圖7表示各處理室140A、140B、140C之相當於晶圓1片之處理時間為200秒、70秒、50秒之情況,此情況下,處理時間最長之處理室為處理室140A,因此依圖2之步驟S110、S120,處理室140A為處理室P1,其處理時間為Tp1,處理室140B為處理室P2,其處理時間為Tp2,處理室140C為處理室P3,其處理時間為Tp3。因此,此情況下,依處理室P1與處理室P2之關係算出晶圓Wp1與晶圓Wp2之搬送時序,晶圓Wp3之搬送時序則依處理室P1與處理室P3之關係算出。算出晶圓Wp3之搬送時序時,為求統一基準搬出間隔Tx而使用算出晶圓Wp1與晶圓Wp2之搬送時序時決定之基準搬出間隔Tx。以下說明此種晶圓搬送時序之算出方法。First, the substrate processing apparatus 200 shown in FIG. 6 has a configuration of a substrate processing apparatus having three processing chambers, and the processing for calculating the wafer transfer timing shown in FIGS. 2-4 is performed, and a specific numerical value will be described with reference to FIG. Fig. 7 shows the wafer processing time courses of the respective processing chambers in which the transfer timing calculated in accordance with Fig. 2-4 is processed. The horizontal axis of Fig. 7 is time, and the processing time periods of the wafers processed by the three processing chambers P1, P2, and P3 are respectively represented by bar graphs. 7 shows that the processing time of each of the processing chambers 140A, 140B, and 140C corresponding to one wafer is 200 seconds, 70 seconds, and 50 seconds. In this case, the processing chamber having the longest processing time is the processing chamber 140A. In steps S110 and S120 of FIG. 2, the processing chamber 140A is the processing chamber P1, the processing time is Tp1, the processing chamber 140B is the processing chamber P2, the processing time is Tp2, and the processing chamber 140C is the processing chamber P3, and the processing time is Tp3. Therefore, in this case, the transfer timing of the wafer Wp1 and the wafer Wp2 is calculated based on the relationship between the processing chamber P1 and the processing chamber P2, and the transfer timing of the wafer Wp3 is calculated based on the relationship between the processing chamber P1 and the processing chamber P3. When the transfer timing of the wafer Wp3 is calculated, the reference carry-out interval Tx determined when the transfer timing of the wafer Wp1 and the wafer Wp2 is calculated is used to unify the reference carry-out interval Tx. A method of calculating such a wafer transfer timing will be described below.

首先,依處理室P1與處理室P2之關係算出晶圓Wp1與晶圓Wp2之搬送時序,此情況下,和圖5(b)之具體例同樣,因此,晶圓Wp1、Wp2之基準搬出間隔Tx成為處理室P2之處理時間70秒×3(=210秒),晶圓Wp1、Wp2之晶圓搬出數比(Wp1:Wp2)為1:3。晶圓Wp1之晶圓搬出間隔成為在基準搬出間隔Tx(=210秒)搬出1片之間隔,晶圓Wp2之晶圓搬出間隔成為在基準搬出間隔Tx(=210秒)搬出3片、在每一處理時間Tp2(=0秒)搬出1片之間隔。First, the transfer timing of the wafer Wp1 and the wafer Wp2 is calculated based on the relationship between the processing chamber P1 and the processing chamber P2. In this case, similarly to the specific example of FIG. 5(b), the reference transport intervals of the wafers Wp1 and Wp2 are performed. Tx is the processing time of the processing chamber P2 of 70 seconds × 3 (= 210 seconds), and the wafer carry-out ratio (Wp1: Wp2) of the wafers Wp1 and Wp2 is 1:3. The wafer carry-out interval of the wafer Wp1 is shifted by one at the reference carry-out interval Tx (=210 seconds), and the wafer carry-out interval of the wafer Wp2 is three sheets at the reference carry-out interval Tx (=210 seconds). A processing time Tp2 (=0 seconds) is carried out at intervals of one piece.

接著,依處理室P1與處理室P3之關係算出處理室P3處理之晶圓Wp3之搬送時序,此情況下,已經決定基準搬出間隔Tx為210秒,因此使用其算出晶圓Wp3之搬送時序。具體言之為,例如基準搬出間隔Tx固定為210秒,進行圖3之步驟S210、S220、S260之處理,進行圖4之步驟S310、S330之處理。Next, the transfer timing of the wafer Wp3 processed in the processing chamber P3 is calculated based on the relationship between the processing chamber P1 and the processing chamber P3. In this case, since the reference carry-out interval Tx has been determined to be 210 seconds, the transfer timing of the wafer Wp3 is calculated using this. Specifically, for example, the reference carry-out interval Tx is fixed to 210 seconds, and the processes of steps S210, S220, and S260 of FIG. 3 are performed, and the processes of steps S310 and S330 of FIG. 4 are performed.

亦即,依步驟S210,設為k=3代入式(1-1)與(1-2),滿足彼等之式者為n=4。之後,依步驟S220,設為k=3分別將數值代入式(1-3),則處理室P3之等待時間Tw3=210-50×4=10秒,依步驟S260,處理室P1處理之晶圓Wp1、處理室P3處理之晶圓Wp3之晶圓搬出數比(Wp1=Wp3)為1:4。之後,依圖4之步驟S310、S330,處理室P3處理之晶圓Wp3之晶圓搬出間隔設為,在基準搬出間隔Tx(=210秒)內各4片、於每一處理時間Tp3(=50秒)各1片被搬出之間隔。That is, in step S210, k=3 is substituted into equations (1-1) and (1-2), and those satisfying the formula are n=4. Then, according to step S220, it is assumed that k=3 respectively substitutes the numerical value into the formula (1-3), and the waiting time Tw3 of the processing chamber P3 is 210-50×4=10 seconds, and the processing chamber P1 processes the crystal according to step S260. The wafer Wp3 processed by the circle Wp1 and the processing chamber P3 has a wafer carry-out ratio (Wp1 = Wp3) of 1:4. Thereafter, in accordance with steps S310 and S330 of FIG. 4, the wafer carry-out interval of the wafer Wp3 processed by the processing chamber P3 is set to 4 pieces in the reference carry-out interval Tx (=210 seconds) at each processing time Tp3 (= 50 seconds) The interval at which each piece is moved out.

藉由上述晶圓搬送時序由卡匣容器134搬出各晶圓Wp1、Wp2、Wp3,則各處理室P1、P2、P3之處理時程如圖7所示。此情況下,在每一基準搬出間隔Tx(=210秒),於處理室P1等待時間Tw1為10秒、晶圓Wp1被連續處理,於處理室P2等待時間為0、各3片晶圓Wp2被連續處理,於處理室P3等待時間Tw3為10秒、各4片晶圓Wp3被連續處理。When the respective wafers Wp1, Wp2, and Wp3 are carried out from the cassette container 134 by the above-described wafer transfer timing, the processing time of each of the processing chambers P1, P2, and P3 is as shown in FIG. In this case, in each of the reference carry-out intervals Tx (=210 seconds), the waiting time Tw1 in the processing chamber P1 is 10 seconds, the wafer Wp1 is continuously processed, and the waiting time in the processing chamber P2 is 0, and each of the three wafers Wp2 The processing is continued, and the waiting time Tw3 in the processing chamber P3 is 10 seconds, and each of the four wafers Wp3 is continuously processed.

其次,針對圖6所示基板處理裝置200具備4個處理室之基板處理裝置之構成,進行圖2-4所示算出晶圓搬送時序之處理,依圖8以具體數值說明。圖8表示依據圖2-4算出之搬送時序被處理的各處理室之晶圓處理時程。圖8之橫軸為時間,4個處理室P1、P2、P3、P4處理之晶圓之處理時程分別以棒狀圖表示。圖8表示各處理室140A、140B、140C、140D之相當於晶圓1片之處理時間為200秒、70秒、60秒、50秒之情況,此情況下,處理時間最長之處理室為處理室140A,因此依圖2之步驟S110、S120,處理室140A為處理室P1,其處理時間為Tp1,處理室140B為處理室P2,其處理時間為Tp2,處理室140C為處理室P3,其處理時間為Tp3,處理室140D為處理室P4,其處理時間為Tp4。因此,此情況下,依處理室P1與處理室P2之關係算出晶圓Wp1與晶圓Wp2之搬送時序,晶圓Wp3之搬送時序則依處理室P1與處理室P3之關係算出,晶圓Wp4之搬送時序依處理室P1與處理室P4之關係算出。算出晶圓Wp3、Wp4之搬送時序時,為求統一基準搬出間隔Tx而使用算出晶圓Wp1與晶圓Wp2之搬送時序時決定之基準搬出間隔Tx。以下說明此種晶圓搬送時序之算出方法。Next, the substrate processing apparatus 200 shown in Fig. 6 is provided with a configuration of a substrate processing apparatus having four processing chambers, and the processing for calculating the wafer transfer timing shown in Figs. 2-4 is performed, and a specific numerical value will be described with reference to Fig. 8 . Fig. 8 shows the wafer processing time courses of the respective processing chambers in which the transfer timing calculated in accordance with Fig. 2-4 is processed. The horizontal axis of Fig. 8 is time, and the processing time courses of the wafers processed by the four processing chambers P1, P2, P3, and P4 are respectively represented by bar graphs. 8 shows the processing time of each of the processing chambers 140A, 140B, 140C, and 140D corresponding to one wafer, which is 200 seconds, 70 seconds, 60 seconds, and 50 seconds. In this case, the processing chamber having the longest processing time is processed. The chamber 140A, therefore, according to steps S110 and S120 of FIG. 2, the processing chamber 140A is the processing chamber P1, the processing time is Tp1, the processing chamber 140B is the processing chamber P2, the processing time is Tp2, and the processing chamber 140C is the processing chamber P3. The processing time is Tp3, and the processing chamber 140D is the processing chamber P4, and the processing time is Tp4. Therefore, in this case, the transfer timing of the wafer Wp1 and the wafer Wp2 is calculated based on the relationship between the processing chamber P1 and the processing chamber P2, and the transfer timing of the wafer Wp3 is calculated based on the relationship between the processing chamber P1 and the processing chamber P3, and the wafer Wp4 The transfer timing is calculated based on the relationship between the processing chamber P1 and the processing chamber P4. When the transfer timing of the wafers Wp3 and Wp4 is calculated, the reference carry-out interval Tx determined when the transfer timing of the wafer Wp1 and the wafer Wp2 is calculated is used to unify the reference carry-out interval Tx. A method of calculating such a wafer transfer timing will be described below.

首先,依處理室P1與處理室P2之關係算出晶圓Wp1與晶圓Wp2之搬送時序,此情況下,和圖5(b)之具體例同樣,因此,晶圓Wp1、Wp2之基準搬出間隔Tx成為處理室P2之處理時間70秒×3(=210秒),晶圓Wp1、Wp2之晶圓搬出數比(Wp1:Wp2)為1:3。晶圓Wp1之晶圓搬出間隔成為在基準搬出間隔Tx(=210秒)搬出1片之間隔,晶圓Wp2之晶圓搬出間隔成為在基準搬出間隔Tx(=210秒)搬出3片、在每一處理時間Tp2(=0秒)搬出1片之間隔。First, the transfer timing of the wafer Wp1 and the wafer Wp2 is calculated based on the relationship between the processing chamber P1 and the processing chamber P2. In this case, similarly to the specific example of FIG. 5(b), the reference transport intervals of the wafers Wp1 and Wp2 are performed. Tx is the processing time of the processing chamber P2 of 70 seconds × 3 (= 210 seconds), and the wafer carry-out ratio (Wp1: Wp2) of the wafers Wp1 and Wp2 is 1:3. The wafer carry-out interval of the wafer Wp1 is shifted by one at the reference carry-out interval Tx (=210 seconds), and the wafer carry-out interval of the wafer Wp2 is three sheets at the reference carry-out interval Tx (=210 seconds). A processing time Tp2 (=0 seconds) is carried out at intervals of one piece.

接著,依處理室P1與處理室P3之關係算出處理室P3處理之晶圓Wp3之搬送時序,此情況下,已經決定基準搬出間隔Tx為210秒,因此使用其算出晶圓Wp3之搬送時序。具體言之為,例如基準搬出間隔Tx固定為210秒,進行圖3之步驟S210、S220、S260之處理,進行圖4之步驟S310、S330之處理。Next, the transfer timing of the wafer Wp3 processed in the processing chamber P3 is calculated based on the relationship between the processing chamber P1 and the processing chamber P3. In this case, since the reference carry-out interval Tx has been determined to be 210 seconds, the transfer timing of the wafer Wp3 is calculated using this. Specifically, for example, the reference carry-out interval Tx is fixed to 210 seconds, and the processes of steps S210, S220, and S260 of FIG. 3 are performed, and the processes of steps S310 and S330 of FIG. 4 are performed.

亦即,依步驟S210,設為k=3代入式(1-1)與(1-2),滿足彼等之式者為n=3。之後,依步驟S220,設為k=3分別將數值代入式(1-3),則處理室P3之等待時間Tw3=210-60×3=30秒,依步驟S260,處理室P1處理之晶圓Wp1、處理室P3處理之晶圓Wp3之晶圓搬出數比(Wp1:Wp3)為1:3。之後,依圖4之步驟S310、S330,處理室P3處理之晶圓Wp3之晶圓搬出間隔設為,在基準搬出間隔Tx(=210秒)內各3片、於每一處理時間Tp3(=50秒)各1片被搬出之間隔。That is, in step S210, k=3 is substituted into equations (1-1) and (1-2), and those satisfying the formula are n=3. Then, in step S220, it is assumed that k=3 respectively substitutes the numerical value into the formula (1-3), and the waiting time Tw3 of the processing chamber P3 is 210-60×3=30 seconds, and the processing chamber P1 processes the crystal according to step S260. The wafer carry-out ratio (Wp1: Wp3) of the wafer Wp3 processed by the circle Wp1 and the processing chamber P3 is 1:3. Thereafter, in accordance with steps S310 and S330 of FIG. 4, the wafer carry-out interval of the wafer Wp3 processed by the processing chamber P3 is set to 3 pieces in the reference carry-out interval Tx (=210 seconds) at each processing time Tp3 (= 50 seconds) The interval at which each piece is moved out.

接著,依處理室P1與處理室P4之關係算出處理室P4處理之晶圓Wp4之搬送時序,此情況下,已經決定基準搬出間隔Tx為210秒,因此使用其算出晶圓Wp4之搬送時序。具體言之為,例如基準搬出間隔Tx固定為210秒,進行圖3之步驟S210、S220、S260之處理,進行圖4之步驟S310、S330之處理。Next, the transfer timing of the wafer Wp4 processed in the processing chamber P4 is calculated based on the relationship between the processing chamber P1 and the processing chamber P4. In this case, since the reference unloading interval Tx is determined to be 210 seconds, the transfer timing of the wafer Wp4 is calculated using this. Specifically, for example, the reference carry-out interval Tx is fixed to 210 seconds, and the processes of steps S210, S220, and S260 of FIG. 3 are performed, and the processes of steps S310 and S330 of FIG. 4 are performed.

亦即,依步驟S210,設為k=4代入式(1-1)與(1-2),滿足彼等之式者為n=4。之後,依步驟S220,設為k=4分別將數值代入式(1-3),則處理室P4之等待時間Tw4=210-50×4=10秒,依步驟S260,處理室P1處理之晶圓Wp1、處理室P3處理之晶圓Wp4之晶圓搬出數比(Wp1:Wp4)為1:4。之後,依圖4之步驟S310、S330,處理室P4處理之晶圓Wp4之晶圓搬出間隔設為,在基準搬出間隔Tx(=210秒)內各4片、於每一處理時間Tp3(=50秒)各1片被搬出之間隔。That is, in step S210, k=4 is substituted into equations (1-1) and (1-2), and those satisfying the formula are n=4. Then, in step S220, if k=4 is substituted into the formula (1-3), the waiting time of the processing chamber P4 is Tw4=210-50×4=10 seconds, and the processing chamber P1 processes the crystal according to step S260. The wafer carry-out ratio (Wp1: Wp4) of the wafer Wp4 processed by the circle Wp1 and the processing chamber P3 is 1:4. Thereafter, in accordance with steps S310 and S330 of FIG. 4, the wafer carry-out interval of the wafer Wp4 processed in the processing chamber P4 is set to 4 pieces in the reference carry-out interval Tx (=210 seconds) at each processing time Tp3 (= 50 seconds) The interval at which each piece is moved out.

藉由上述晶圓搬送時序由卡匣容器134搬出各晶圓Wp1、Wp2、Wp3、Wp4,則各處理室P1、P2、P3、P4之處理時程如圖8所示。此情況下,在每一基準搬出間隔Tx(=210秒)內,於處理室P1等待時間Tw1為10秒、晶圓Wp1被連續處理,於處理室P2等待時間為0、各3片晶圓Wp2被連續處理,於處理室P3等待時間Tw3為30秒、各3片晶圓Wp3被連續處理,於處理室P4等待時間Tw4為10秒、各4片晶圓Wp4被連續處理。When the respective wafers Wp1, Wp2, Wp3, and Wp4 are carried out by the cassette container 134 by the above-described wafer transfer timing, the processing time of each of the processing chambers P1, P2, P3, and P4 is as shown in FIG. In this case, in each of the reference carry-out intervals Tx (=210 seconds), the waiting time Tw1 in the processing chamber P1 is 10 seconds, the wafer Wp1 is continuously processed, and the waiting time in the processing chamber P2 is 0, and each of the three wafers Wp2 is continuously processed, and the processing chamber P3 waits for a time Tw3 of 30 seconds, and each of the three wafers Wp3 is continuously processed. The processing chamber P4 waits for a time Tw4 of 10 seconds, and each of the four wafers Wp4 is continuously processed.

(算出晶圓搬送時序之處理之其他具體例)(Other specific examples of the processing of calculating the wafer transfer timing)

以下說明依上述本發明之原理進行之算出晶圓搬送時序之處理之其他具體例,該其他具體例之主流程和圖2所示者相同,故省略其詳細說明。圖9為圖2之步驟S130之晶圓搬出數比之算出處理之另一具體例,圖10為圖2之步驟S140之晶圓搬出間隔之算出處理之另一具體例。圖9、10之處理,係以相當於晶圓1片之處理時間最長之處理室P1之處理時間Tp1.m為基準,算出晶圓搬出數比與晶圓搬出間隔之情況,亦即,在基準搬出間隔Tx可處理之晶圓Wp1之片數設為m之情況。又,m亦可為1。m=1時之晶圓搬送時序和依據圖3、4之處理算出之結果同樣。Other specific examples of the process of calculating the wafer transfer timing by the principle of the present invention will be described below. The main flow of the other specific examples is the same as that shown in FIG. 2, and detailed description thereof will be omitted. FIG. 9 is another specific example of the calculation process of the wafer carry-out ratio in step S130 of FIG. 2. FIG. 10 is another specific example of the process of calculating the wafer carry-out interval in step S140 of FIG. The processing of Figures 9 and 10 is the processing time Tp1 of the processing chamber P1 which has the longest processing time corresponding to one wafer. On the basis of m, the wafer carry-out ratio and the wafer carry-out interval are calculated, that is, the number of wafers Wp1 that can be processed at the reference carry-out interval Tx is m. Also, m can be 1. The wafer transfer timing at the time of m=1 is the same as the result calculated by the processing of Figs. 3 and 4.

(算出晶圓搬出數比之處理之其他具體例)(Other specific examples of processing for calculating the number of wafer carry-outs)

首先,參照圖9說明算出上述晶圓搬出數比之處理之其他具體例。如圖9所示,於步驟S410,假設以相當於晶圓1片之處理時間最長之處理室P1之處理時間Tp1.m為基準搬出間隔Tx,算出在該基準搬出間隔Tx之區間內(於此為處理時間Tp1.M內)其他處理室Pk可處理之晶圓Wpk之最大片數n。於處理室P1之處理時間Tp1.m內,使其他處理室Pk可處理片數之晶圓Wpk由卡匣容器搬出,依此則處理室Pk之等待時間可以盡量減少。First, another specific example of the process of calculating the above-described wafer carry-out ratio will be described with reference to FIG. 9. As shown in FIG. 9, in step S410, it is assumed that the processing time Tp1 of the processing chamber P1 which is the longest processing time corresponding to one wafer is assumed. m is the reference carry-out interval Tx, and the maximum number n of wafers Wpk that can be processed by the other processing chambers Pk in the section of the reference carry-out interval Tx (here, the processing time Tp1.M) is calculated. Processing time Tp1 in the processing chamber P1. In m, the number of wafers Wpk in which the other processing chambers Pk can be processed is carried out from the cassette container, whereby the waiting time of the processing chamber Pk can be minimized.

具體言之為,例如使以下之式(2-1)與(2-2)同時成立而算出晶圓Wpk之片數n。又,於以下之式(2-1)與(2-2)Tp1為處理室P1中相當於1片晶圓Wp1之處理時間,Tpk為其他處理室Pk中相當於1片晶圓Wpk之處理時間,n為滿足n≧1之整數,m為滿足m≧1之整數,k為如上述說明之滿足k≧2之整數。Specifically, for example, the following equations (2-1) and (2-2) are simultaneously established to calculate the number n of wafers Wpk. Further, in the following formulas (2-1) and (2-2), Tp1 is a processing time corresponding to one wafer Wp1 in the processing chamber P1, and Tpk is processing corresponding to one wafer Wpk in the other processing chamber Pk. Time, n is an integer satisfying n≧1, m is an integer satisfying m≧1, and k is an integer satisfying k≧2 as described above.

Tp1.m≧Tpk.n (2-1) Tp1.M<Tpk.(n+1) (2-2)Tp1. m≧Tpk. n (2-1) Tp1. M<Tpk. (n+1) (2-2)

於以下之步驟S420~S490,決定m、n使各處理室之等待時間成為最短之同時,決定處理室P1之處理時間Tp1與處理室Pk之處理時間Tpk.(n+1)之中等待時間較短者(基準搬出間隔Tx較短者)作為基準搬出間隔Tx,算出各處理室P1、Pk處理之晶圓Wp1、Wpk之晶圓搬出數比.依此則,於處理室P1、Pk之全部可縮短處理之等待時間.因此可達成基板處理裝置全體之等待時間之最適化。In the following steps S420 to S490, it is determined that m and n make the waiting time of each processing chamber the shortest, and the processing time Tp1 of the processing chamber P1 and the processing time Tpk of the processing chamber Pk are determined. The shorter waiting time among (n+1) (the shorter the reference carry-out interval Tx) is used as the reference carry-out interval Tx, and the wafer carry-out ratio of the wafers Wp1 and Wpk processed in each of the processing chambers P1 and Pk is calculated. According to this, all the processing chambers P1 and Pk can shorten the waiting time of processing. Therefore, the optimization of the waiting time of the entire substrate processing apparatus can be achieved.

具體言之為,於步驟S420假設以處理室P1之處理時間Tp1.m設為基準搬出間隔Tx,依以下之式(2-3)算出其他處理室Pk之等待時間Twk。於步驟S430假設以處理室Pk之處理時間Tpk.(n+1)設為基準搬出間隔Tx,依以下之式(2-4)算出處理室P1之等待時間Tw1。Specifically, it is assumed in step S420 that the processing time Tp1 of the processing chamber P1. m is set as the reference carry-out interval Tx, and the waiting time Twk of the other processing chamber Pk is calculated by the following formula (2-3). The processing time Tpk of the processing chamber Pk is assumed in step S430. (n+1) is the reference carry-out interval Tx, and the waiting time Tw1 of the processing chamber P1 is calculated by the following formula (2-4).

Twk=Tp1.m-Tpk.n (2-3) Tw1=Tpk.(n+1)-Tp1.m (2-4)Twk=Tp1. m-Tpk. n (2-3) Tw1=Tpk. (n+1)-Tp1. m (2-4)

之後,於步驟S440變化m之值(例如m之值依序增加1),針對各個m於步驟S410、S420、S430算出最大片數n及等待時間Tw1、Twk,決定m、n以使等待時間Tw1、Twk之其中任一成為最小。Thereafter, the value of m is changed in step S440 (for example, the value of m is sequentially increased by 1), and the maximum number of slices n and the waiting times Tw1 and Twk are calculated for each m in steps S410, S420, and S430, and m and n are determined to make the waiting time. Either Tw1 or Twk is the smallest.

之後,於步驟S450比較上述步驟S440決定之m、n時之各等待時間Tw1、Twk,判斷哪一方之等待時間鑒短。於步驟S450判斷Twk≦Tw1時,亦即等待時間Twk較短(或等待時間Tw1、Twk相等)時,於步驟S460依以下之式(2-5)將各晶圓Wp1、Wpk之基準搬出間隔Tx決定為處理室P1之處理時間Tp1.m,於步驟S470將各晶圓Wp1、Wpk之晶圓搬出數比(Wp1:Wpk)設為m:n。Thereafter, in step S450, the waiting times Tw1 and Twk at the time m and n determined in the above-described step S440 are compared, and it is determined which of the waiting times is shorter. When it is determined in step S450 that Twk ≦ Tw1, that is, when the waiting time Twk is short (or the waiting times Tw1 and Twk are equal), the reference wafers Wp1 and Wpk are moved out at intervals in step S460 according to the following formula (2-5). Tx is determined as the processing time Tp1 of the processing chamber P1. m, in step S470, the wafer carry-out ratio (Wp1: Wpk) of each of the wafers Wp1, Wpk is m: n.

Tx=Tp1.M=Tpk.n+Twk (2-5)Tx=Tp1. M=Tpk. n+Twk (2-5)

依上述獲得之基準搬出間隔Tx(=Tp1.M=Tpk.n+Twk),於該區間內,處理室P1處理之晶圓Wp1被搬出m片,處理室P1之等待時間為0之同時,,處理室Pk處理之晶圓Wpk被搬出n片,處理室Pk之等待時間為Twk。According to the above-mentioned reference carry-out interval Tx (=Tp1.M=Tpk.n+Twk), in this section, the wafer Wp1 processed by the processing chamber P1 is carried out by m pieces, and the waiting time of the processing chamber P1 is 0, and processing is performed. The wafer Wk processed by the chamber Pk is carried out by n pieces, and the waiting time of the processing chamber Pk is Twk.

相對於此,於步驟S450判斷非Twk≦Tw1時,亦即等待時間Tw1較短時,於步驟S480依以下之式(2-6)將各晶圓Wp1、Wpk之基準搬出間隔Tx決定為處理室Pk之處理時間Tpk.(n+1),於步驟S490將各晶圓Wp1、Wpk之晶圓搬出數比(Wp1=Wpk)設為m=n+1。On the other hand, when it is determined in step S450 that the non-Twk ≦ Tw1, that is, the waiting time Tw1 is short, the reference carry-out interval Tx of each of the wafers Wp1 and Wpk is determined as the processing in the following step (2-6) in the step S480. Room Pk processing time Tpk. (n+1), in step S490, the wafer carry-out ratio (Wp1 = Wpk) of each of the wafers Wp1, Wpk is m = n + 1.

Tx=Tp1.m+Tw1=Tpk.(n+1) (2-6)Tx=Tp1. m+Tw1=Tpk. (n+1) (2-6)

依上述獲得之基準搬出間隔Tx(=Tp1.m+Tw1=Tpk.(n+1)),於該區間內,處理室P1處理之晶圓Wp1被搬出m片,處理室P1之等待時間為Tw1之同時,處理室Pk處理之晶圓Wpk被搬出n+1片,處理室Pk之等待時間為0。又圖3之處理所得基準搬出間隔Tx及晶圓搬出數比等被記憶於控制部190之記憶體等。According to the above-mentioned reference carry-out interval Tx (=Tp1.m+Tw1=Tpk.(n+1)), in the interval, the wafer Wp1 processed by the processing chamber P1 is carried out by m pieces, and the waiting time of the processing chamber P1 is Tw1. The wafer Wpk processed in the processing chamber Pk is carried out by n+1 sheets, and the waiting time of the processing chamber Pk is zero. Further, the reference carry-out interval Tx and the wafer carry-out ratio obtained in the process of FIG. 3 are stored in the memory of the control unit 190 or the like.

(算出晶圓搬出間隔之處理之其他具體例)(Other specific examples of the processing of calculating the wafer carry-out interval)

接著,參照圖10說明算出晶圓搬出間隔之處理之其他具體例,於此係依據圖9所示算出晶圓搬出數比之處理之而決定之基準搬出間隔Tx產生之晶圓搬出數比,算出實際由卡匣容器134搬出晶圓時之各晶圓Wp1、Wpk之晶圓搬出間隔。Next, another specific example of the process of calculating the wafer carry-out interval will be described with reference to FIG. 10, and the number of wafer carry-out ratios generated by the reference carry-out interval Tx determined by the process of calculating the wafer carry-out ratio is calculated as shown in FIG. The wafer unloading interval of each of the wafers Wp1 and Wpk when the wafer is actually carried out by the cassette container 134 is calculated.

具體言之為,首先,如圖10所示,於步驟S510由控制部190之記憶體等取出圖9之處理所算出之晶圓搬出數比(Wp1:Wpk),判斷晶圓搬出數比(Wp1:Wpk)為m:n或m:n+1。Specifically, as shown in FIG. 10, in step S510, the wafer carry-out ratio (Wp1: Wpk) calculated by the process of FIG. 9 is taken out from the memory of the control unit 190, and the number of wafer carry-out ratios is determined ( Wp1: Wpk) is m: n or m: n+1.

於步驟S510判斷晶圓搬出數比(Wp1:Wpk)為m:n時,於步驟S520針對處理室P1處理之晶圓Wp1之晶圓搬出間隔,設為在基準搬出間隔Tx搬出各m片、於每一處理時間Tp1搬出各1片之間隔。依此則,晶圓Wp1例如在基準搬出間隔Tx之每一區間各m片連續由卡匣容器134搬出。此情況下,基準搬出間隔Tx成為處理室P1之處理時間Tp1.m,因此於處理室P1在每一基準搬出間隔Tx之等待時間為0而使各m片晶圓Wp1被連續處理。When it is determined in step S510 that the wafer carry-out ratio (Wp1:Wpk) is m:n, the wafer carry-out interval of the wafer Wp1 processed in the processing chamber P1 in step S520 is assumed to be carried out at the reference carry-out interval Tx. The interval between each piece is carried out at each processing time Tp1. In this case, the wafer Wp1 is continuously carried out by the cassette container 134 in each of the m pieces of the reference carry-out interval Tx. In this case, the reference carry-out interval Tx becomes the processing time Tp1 of the processing chamber P1. Therefore, the waiting time of the processing chamber P1 at each of the reference carry-out intervals Tx is 0, and each of the m wafers Wp1 is continuously processed.

之後,於步驟S530,針對處理室Pk處理之晶圓Wpk之晶圓搬出間隔,設為在基準搬出間隔Tx各n片、於每一處理時間Tpk各1片搬出之間隔。依此則,晶圓Wpk例如在基準搬出間隔Tx之每一區間各n片連續由卡匣容器134搬出之同時,僅有等待時間Twk之搬出等待。亦即,n片連續由卡匣容器134搬出之後僅等待等待時間Twk之後次一n片連續由卡匣容器134再度被搬出。此情況下,基準搬出間隔Tx成為處理室Pk之處理時間Tpk.n+Twk,因此,處理室Pk在基準搬出間隔Tx之每一區間存在等待時間Twk之狀態下針對各n片晶圓Wpk施予連續處理。Thereafter, in step S530, the wafer unloading interval of the wafer Wk processed in the processing chamber Pk is set to be one interval at a time for each of the reference carry-out intervals Tx and one for each processing time Tpk. In this case, for example, the wafer Wpk is continuously carried out by the cassette container 134 in each of the sections of the reference carry-out interval Tx, and only the waiting time Twk is carried out. That is, after the n pieces are continuously carried out by the cassette container 134, only one waiting time Twk is waited for, and the next n pieces are continuously carried out again by the cassette container 134. In this case, the reference carry-out interval Tx becomes the processing time Tpk of the processing chamber Pk. Since n + Twk, the processing chamber Pk performs continuous processing for each n wafer Wpk in a state where the waiting time Twk exists in each section of the reference carry-out interval Tx.

相對於此,步驟S510判斷晶圓搬出數比(Wp1:Wpk)為m:n+1時,於步驟S540針對處理室P1處理之晶圓Wp1之晶圓搬出間隔,設為在基準搬出間隔Tx各m片、於每一處理時間Tp1各1片被搬出之間隔。依此則,晶圓Wp1例如在基準搬出間隔Tx之每一區間各m片由卡匣容器134被搬出之同時,僅存在等待時間Tw1之搬出等待。亦即,m片依每一處理時間Tp1連續由卡匣容器134搬出之後等待等待時間Tw1之後次一m片再度依每一處理時間Tp1連續由卡匣容器134搬出。此情況下,基準搬出間隔Tx成為處理室P1之處理時間Tp1.m+Ww1,因此,在處理室P1在基準搬出間隔Tx之每一區間存在等待時間Tw1之狀態下使各m片晶圓Wp1被處理。On the other hand, when it is determined in step S510 that the wafer carry-out ratio (Wp1:Wpk) is m:n+1, the wafer carry-out interval of the wafer Wp1 processed in the processing chamber P1 in step S540 is set to be m at the reference carry-out interval Tx. The interval at which each sheet is carried out at each processing time Tp1. In this case, for example, the wafer Wp1 is carried out by the cassette container 134 in each of the intervals of the reference carry-out interval Tx, and only the waiting time Tw1 is carried out. That is, the m pieces are successively carried out by the cassette container 134 after each processing time Tp1, and wait for the waiting time Tw1, and then the next m pieces are continuously carried out by the cassette container 134 for each processing time Tp1. In this case, the reference carry-out interval Tx becomes the processing time Tp1 of the processing chamber P1. Since m + Ww1, each m wafer Wp1 is processed in the state where the processing chamber P1 has the waiting time Tw1 in each section of the reference carry-out interval Tx.

之後,於步驟S550,針對處理室Pk處理之晶圓Wpk之晶圓搬出間隔,設為在基準搬出間隔Tx各n+1片依每一處理時間Tpk各1片搬出之間隔。依此則,晶圓Wpk例如在基準搬出間隔Tx之每一區間各n+1片連續由卡匣容器134搬出,此情況下,基準搬出間隔Tx成為處理室Pk之處理時間Tpk.(n+1),因此,處理室Pk在基準搬出間隔Tx之每一區間於等待時間0之狀態下連續處理各n+1片晶圓Wpk。Thereafter, in step S550, the wafer unloading interval for the wafer Wk processed in the processing chamber Pk is set to be an interval at which n+1 sheets are moved one by one for each processing time Tpk at the reference carry-out interval Tx. In this case, the wafer Wpk is continuously carried out by the cassette container 134 in each of the intervals of the reference carry-out interval Tx. For example, the reference carry-out interval Tx becomes the processing time Tpk of the processing chamber Pk. (n+1), therefore, the processing chamber Pk continuously processes each n+1 wafer Wpk in the state of the waiting time 0 in each of the reference carry-out intervals Tx.

圖9、10所示處理算出之晶圓搬出數比與晶圓搬出間隔被記憶於控制部190之記憶體。實際上進行晶圓處理時,藉由控制部190由記憶體取得圖9、10獲得之晶圓搬出數比與晶圓搬出間隔,依該晶圓搬出數比與晶圓搬出間隔控制搬送單元側搬送機構170,使晶圓Wp1、Wpk分別由卡匣容器134搬出。The wafer carry-out ratio calculated by the processing shown in FIGS. 9 and 10 and the wafer carry-out interval are stored in the memory of the control unit 190. When the wafer processing is actually performed, the control unit 190 obtains the wafer carry-out ratio and the wafer carry-out interval obtained from the memory in FIGS. 9 and 10, and controls the transport unit side based on the wafer carry-out ratio and the wafer carry-out interval. The transport mechanism 170 causes the wafers Wp1 and Wpk to be carried out by the cassette container 134, respectively.

依此則,例如處理時間較長處理室P1處理之晶圓Wp1依其之處理時間Tp1以較長間隔由卡匣容器134搬出,處理時間較短處理室Pk處理之晶圓Wpk依其之處理時間Tpk以較短間隔由卡匣容器134搬出。如此則,習知處理時間較長處理室P1處理之晶圓Wp1長時間待機於共通搬送室150、載入鎖定室160 M、160 N、定向器137等,處理時間較短處理室Pk處理之晶圓Wpk無法由卡匣容器134搬出之情況可以消除。因此,可提升各處理室P1、Pk之稼動效率,可提升基板處理裝置全體之作業效率。According to this, for example, the wafer Wp1 processed by the processing chamber P1 is processed by the cassette container 134 at a longer interval according to the processing time Tp1, and the wafer Wpk processed by the processing chamber Pk is processed accordingly. The time Tpk is carried out by the cassette container 134 at a short interval. In this case, the wafer Wp1 processed by the processing chamber P1 for a long time is reserved for the long time in the common transfer chamber 150, the load lock chambers 160 M, 160 N, the director 137, etc., and the processing time is shorter. The case where the wafer Wpk cannot be carried out by the cassette container 134 can be eliminated. Therefore, the efficiency of the processing of each of the processing chambers P1 and Pk can be improved, and the work efficiency of the entire substrate processing apparatus can be improved.

又,針對晶圓Wp1、Wpk分別以相同基準搬出間隔Tx之時序(週期)由卡匣容器134搬出,因此,各晶圓Wp1、Wpk之基準搬出間隔Tx之各區間,僅偏移最初處理之晶圓Wp1、Wpk被搬出時產生之起動時序之偏移時間Tsk。因此,晶圓Wp1、Wpk被搬出之時序不會同時,又,圖9、10之處理,不僅適用處理室P1之處理時間Tp1並非處理室Pk之處理時間Tpk之整數倍之情況,亦適用處理室P1之處理時間Tp1正好為處理室Pk之處理時間Tpk之整數倍之情況。Further, since the wafers Wp1 and Wpk are carried out by the cassette container 134 at the timing (cycle) of the same reference carry-out interval Tx, the respective intervals of the reference carry-out interval Tx of the wafers Wp1 and Wpk are shifted only from the initial processing. The offset time Tsk of the start timing generated when the wafers Wp1 and Wpk are carried out. Therefore, the timings at which the wafers Wp1 and Wpk are carried out are not simultaneous, and the processing of FIGS. 9 and 10 is applicable not only to the case where the processing time Tp1 of the processing chamber P1 is not an integral multiple of the processing time Tpk of the processing chamber Pk, but also for the processing. The processing time Tp1 of the chamber P1 is exactly the case of an integral multiple of the processing time Tpk of the processing chamber Pk.

其次,針對圖6所示基板處理裝置200具備4個處理室之基板處理裝置之構成,進行圖2、9,10所示算出晶圓搬送時序之處理,以更具體數值說明。圖11表示依據圖2、9、10算出之搬送時序被處理的各處理室之晶圓處理時程。圖11之橫軸為時間,4個處理室P1、P2、P3、P4處理之晶圓之處理時程分別以棒狀圖表示。圖11表示各處理室140A、140B、140C、140D之相當於晶圓1片之處理時間為100秒、70秒、60秒、50秒之情況,此情況下,處理時間最長之處理室為處理室140A,因此依圖2之步驟S110、S120,處理室140A為處理室P1,其處理時間為Tp1,處理室140B為處理室P2,其處理時間為Tp2,處理室140C為處理室P3,其處理時間為Tp3,處理室140D為處理室P4,其處理時間為Tp4。因此,此情況下,依處理室P1與處理室P2之關係算出晶圓Wp1與晶圓Wp2之搬送時序,晶圓Wp3之搬送時序則依處理室P1與處理室P3之關係算出,晶圓Wp4之搬送時序依處理室P1與處理室P4之關係算出。算出晶圓Wp3、Wp4之搬送時序時,為求統一基準搬出間隔Tx而使用算出晶圓Wp1與晶圓Wp2之搬送時序時決定之基準搬出間隔Tx。以下說明此種晶圓搬送時序之算出方法。Next, the substrate processing apparatus 200 shown in FIG. 6 has a configuration of a substrate processing apparatus having four processing chambers, and the processing for calculating the wafer transfer timing shown in FIGS. 2, 9, and 10 is described with more specific numerical values. Fig. 11 shows the wafer processing time courses of the respective processing chambers processed in accordance with the transfer timings calculated in accordance with Figs. 2, 9, and 10. The horizontal axis of Fig. 11 is time, and the processing time periods of the wafers processed by the four processing chambers P1, P2, P3, and P4 are respectively represented by bar graphs. 11 shows the processing time of each of the processing chambers 140A, 140B, 140C, and 140D corresponding to one wafer, which is 100 seconds, 70 seconds, 60 seconds, and 50 seconds. In this case, the processing chamber having the longest processing time is processed. The chamber 140A, therefore, according to steps S110 and S120 of FIG. 2, the processing chamber 140A is the processing chamber P1, the processing time is Tp1, the processing chamber 140B is the processing chamber P2, the processing time is Tp2, and the processing chamber 140C is the processing chamber P3. The processing time is Tp3, and the processing chamber 140D is the processing chamber P4, and the processing time is Tp4. Therefore, in this case, the transfer timing of the wafer Wp1 and the wafer Wp2 is calculated based on the relationship between the processing chamber P1 and the processing chamber P2, and the transfer timing of the wafer Wp3 is calculated based on the relationship between the processing chamber P1 and the processing chamber P3, and the wafer Wp4 The transfer timing is calculated based on the relationship between the processing chamber P1 and the processing chamber P4. When the transfer timing of the wafers Wp3 and Wp4 is calculated, the reference carry-out interval Tx determined when the transfer timing of the wafer Wp1 and the wafer Wp2 is calculated is used to unify the reference carry-out interval Tx. A method of calculating such a wafer transfer timing will be described below.

首先,依處理室P1與處理室P2之關係算出晶圓Wp1與晶圓Wp2之搬送時序,亦即,依圖9之步驟S410~S440算出使等待時間Twk、Tw1成為最小之m、n時,m=2,n=3。接著,依步驟S450~S470,晶圓Wp1、Wp2之基準搬出間隔Tx成為處理室P2之處理時間70秒×3(=210秒),晶圓Wp1、Wp2之晶圓搬出數比(Wp1:Wp2)成為2:3。晶圓Wp1之晶圓搬出間隔成為在基準搬出間隔Tx(=210秒)各2片、在每一處理時間Tp1(=100買)各1片被搬出之間隔,晶圓Wp2之晶圓搬出間隔成為在基準搬出間隔Tx(=200秒)各3片、在每一處理時間Tp2(=70秒)各1片搬出之間隔。First, the transfer timing of the wafer Wp1 and the wafer Wp2 is calculated based on the relationship between the processing chamber P1 and the processing chamber P2, that is, when the waiting times Twk and Tw1 are minimized by m and n in steps S410 to S440 of FIG. m=2, n=3. Next, in steps S450 to S470, the reference carry-out interval Tx of the wafers Wp1 and Wp2 becomes the processing time of the processing chamber P2 of 70 seconds × 3 (= 210 seconds), and the wafer carry-out ratio of the wafers Wp1 and Wp2 (Wp1: Wp2) ) becomes 2:3. The wafer unloading interval of the wafer Wp1 is two intervals at the reference carry-out interval Tx (=210 seconds), and one wafer is ejected at each processing time Tp1 (=100), and the wafer carry-out interval of the wafer Wp2 The interval between each of the three pieces at the reference carry-out interval Tx (=200 seconds) and one piece at each processing time Tp2 (=70 seconds).

接著,依處理室P1與處理室P3之關係算出處理室P3處理之晶圓Wp3之搬送時序,此情況下,已經決定基準搬出間隔Tx為210秒,因此使用其算出晶圓Wp3之搬送時序。具體言之為,和圖8之情況同樣。因此,處理室P1處理之晶圓Wp1、處理室P3處理之晶圓Wp3之晶圓搬出數比(Wp1:Wp3)為1:3。晶圓Wp3之晶圓搬出間隔設為,在基準搬出間隔Tx(=210秒)內各3片、於每一處理時間Tp3(=30秒)各1片被搬出之間隔。Next, the transfer timing of the wafer Wp3 processed in the processing chamber P3 is calculated based on the relationship between the processing chamber P1 and the processing chamber P3. In this case, since the reference carry-out interval Tx has been determined to be 210 seconds, the transfer timing of the wafer Wp3 is calculated using this. Specifically, it is the same as the case of FIG. Therefore, the wafer carry-out ratio (Wp1: Wp3) of the wafer Wp1 processed by the processing chamber P1 and the wafer Wp processed by the processing chamber P3 is 1:3. The wafer carry-out interval of the wafer Wp3 is set to be one of three sheets at a standard carry-out interval Tx (=210 seconds) and one sheet for each processing time Tp3 (=30 seconds).

接著,依處理室P1與處理室P4之關係算出處理室P4處理之晶圓Wp4之搬送時序,此情況下,已經決定基準搬出間隔Tx為210秒,因此使用其算出晶圓Wp4之搬送時序。具體言之為,和圖8之情況同樣。因此,處理室P1處理之晶圓Wp1、處理室P4處理之晶圓Wp4之晶圓搬出數比(Wp1:Wp4)為1:4。晶圓Wp4之晶圓搬出間隔設為,在基準搬出間隔Tx(=210秒)內各4片、於每一處理時間Tp3(=50秒)各1片被搬出之間隔。Next, the transfer timing of the wafer Wp4 processed in the processing chamber P4 is calculated based on the relationship between the processing chamber P1 and the processing chamber P4. In this case, since the reference unloading interval Tx is determined to be 210 seconds, the transfer timing of the wafer Wp4 is calculated using this. Specifically, it is the same as the case of FIG. Therefore, the wafer carry-out ratio Wp1 of the processing chamber P1 and the wafer Wp4 processed by the processing chamber P4 have a wafer transfer ratio (Wp1: Wp4) of 1:4. The wafer carry-out interval of the wafer Wp4 is an interval at which each of the four sheets is carried out at each of the processing time Tp3 (= 50 seconds) in the reference carry-out interval Tx (= 210 seconds).

藉由上述晶圓搬送時序由卡匣容器134搬出各晶圓Wp1、Wp2、Wp3、Wp4,則各處理室P1、P2、P3、P4之處理時程如圖11所示。此情況下,在每一基準搬出間隔Tx(=210秒)內,於處理室P1等待時間Tw1為10秒、晶圓Wp1各2片被連續處理,於處理室P2等待時間為0、各3片晶圓Wp2被連續處理,於處理室P3等待時間Tw3為30秒、各3片晶圓Wp3被連續處理,於處理室P4等待時間Tw4為10秒、各4片晶圓Wp4被連續處理。When the respective wafers Wp1, Wp2, Wp3, and Wp4 are carried out from the cassette container 134 by the above-described wafer transfer timing, the processing time of each of the processing chambers P1, P2, P3, and P4 is as shown in FIG. In this case, in each of the reference carry-out intervals Tx (=210 seconds), the waiting time Tw1 in the processing chamber P1 is 10 seconds, and two wafers Wp1 are continuously processed, and the waiting time in the processing chamber P2 is 0, each 3 The wafer Wp2 was continuously processed, and the waiting time Tw3 was 30 seconds in the processing chamber P3, and the three wafers Wp3 were continuously processed. The waiting time Tw4 in the processing chamber P4 was 10 seconds, and the four wafers Wp4 were continuously processed.

如上述說明,依本實施形態,依據各處理室P1、Pk之晶圓Wp1、Wpk之處理時間Tp1、Tpk,依每一處理室P1、Pk預先算出之晶圓搬送時序由卡匣容器134搬出晶圓Wp1、Wpk,因此於各處理室P1、Pk並類進行晶圓處理時,卡匣容器134之晶圓之搬送時序可配合各處理室P1、Pk之處理時間Tp1、Tpk予以最適化。例如處理時間較長處理室P1處理之晶圓Wp1依其之處理時間Tp1以較長間隔由卡匣容器134搬出,處理時間較短處理室Pk處理之晶圓Wpk依其之處理時間Tpk以較短間隔由卡匣容器134搬出。As described above, according to the present embodiment, the wafer transfer timing calculated in advance for each of the processing chambers P1 and Pk is carried out by the cassette container 134 in accordance with the processing times Tp1 and Tpk of the wafers Wp1 and Wpk of the processing chambers P1 and Pk. When the wafers Wp1 and Wpk are processed in the respective processing chambers P1 and Pk, the wafer transfer timing of the cassette container 134 can be optimized in accordance with the processing times Tp1 and Tpk of the processing chambers P1 and Pk. For example, the wafer Wp1 processed by the processing chamber P1 is processed by the cassette container 134 at a longer interval according to the processing time Tp1, and the processing time is shorter than the processing time Tpk of the wafer Wk processed by the processing chamber Pk. The short interval is carried out by the cassette container 134.

因此,習知處理時間較長處理室P1處理之晶圓Wp1長時間待機於共通搬送室150、載入鎖定室160 M、160 N、定向器137等,處理時間較短處理室Pk處理之晶圓Wpk無法由卡匣容器134搬出之情況可以消除。因此,可提升各處理室P1、Pk之稼動效率,可提升基板處理裝置全體之作業效率。Therefore, it is known that the wafer Wp1 processed by the processing chamber P1 is used for a long time to stand in the common transfer chamber 150, the load lock chambers 160 M, 160 N, the director 137, etc., and the processing time is shorter than that of the processing chamber Pk. The case where the round Wpk cannot be carried out by the cassette container 134 can be eliminated. Therefore, the efficiency of the processing of each of the processing chambers P1 and Pk can be improved, and the work efficiency of the entire substrate processing apparatus can be improved.

又,上述本實施形態茲算出晶圓搬送時序之處理,係於實際之晶圓處理之前被進行。例如,基板處理裝置之電源投入時之熱機處理中被進行。又,之後亦可於針對基板處理裝置進行構件交換或潔淨室維修保養時,或於維修保養後進行。Further, in the above-described embodiment, the processing for calculating the wafer transfer timing is performed before the actual wafer processing. For example, the heat treatment of the substrate processing apparatus when the power is turned on is performed. Further, it may be performed after component exchange or clean room maintenance for the substrate processing apparatus, or after maintenance.

又,本實施形態中,依各處理室之處理時間算出晶圓搬送時序時,係在進行實際晶圓處理前算出晶圓搬送時序時,依據各處理室之處理時間之預測值算出。但是,因為處理室內附著之微粒等處理環境,實際之晶圓之處理時間有可能偏離上述預測值。另外,因為處理而變化基本處理條件(例如處理室內壓力、溫度、處理氣體之流量比、對電極之施加電壓等參數)之一部分或追加新的處理條件之情況下,處理時間亦有可能偏離上述預測值。Further, in the present embodiment, when the wafer transfer timing is calculated based on the processing time of each processing chamber, the wafer transfer timing is calculated before the actual wafer processing, and is calculated based on the predicted value of the processing time of each processing chamber. However, due to the processing environment such as particles attached to the chamber, the actual wafer processing time may deviate from the above predicted value. In addition, in the case where a part of the basic processing conditions (for example, the pressure in the processing chamber, the temperature, the flow ratio of the processing gas, the applied voltage of the counter electrode, etc.) is changed or a new processing condition is added, the processing time may deviate from the above. Predictive value.

如上述說明,各處理室之處理時間偏離預測值時,需再度重新算出晶圓搬送時序。依此則,可依各處理室之實際處理時間算出晶圓搬送時序,可防止各處理室產生之和實際處理時間之偏離引起之不可預測之等待時間。As described above, when the processing time of each processing chamber deviates from the predicted value, the wafer transfer timing needs to be recalculated again. According to this, the wafer transfer timing can be calculated according to the actual processing time of each processing chamber, and the unpredictable waiting time caused by the deviation between the processing chambers and the actual processing time can be prevented.

以上係依圖面說明本發明之較佳實施形態,但本發明不限定於彼等實施形態,在申請專利範圍內可做各種變更、修正實施,該變更、修正實施亦包含於本發明之技術範圍內。The preferred embodiments of the present invention are described above with reference to the drawings. However, the present invention is not limited to the embodiments, and various modifications and changes can be made without departing from the scope of the invention. Within the scope.

例如上述實施形態中,以處理單元於共通搬送室周圍連接多數處理室之所謂群組加工型基板處理裝置為例說明,本發明亦適用例如處理單元於處理室連接載入鎖定室,於搬送單元並列連接多數處理單元的所謂縱列(tandem)型基板處理裝置等之其他具備多數處理室進行並行處理的各種形態之基板處理裝置。For example, in the above-described embodiment, a so-called group processing type substrate processing apparatus in which a processing unit is connected to a plurality of processing chambers around a common transfer chamber is taken as an example. The present invention is also applicable to, for example, a processing unit connecting a load lock chamber to a processing chamber, and a transport unit. Other types of substrate processing apparatuses including a so-called tandem type substrate processing apparatus in which a plurality of processing units are connected in parallel, and which have a plurality of processing chambers for parallel processing.

(產業上可利用性)(industrial availability)

本發明可適用對被處理基板施予特定處理之基板處理裝置及基板處理裝置之基板搬送方法。In the present invention, a substrate processing apparatus that performs a specific treatment on a substrate to be processed and a substrate transfer method of the substrate processing apparatus can be applied.

(發明效果)(effect of the invention)

依上述說明之本發明可提供基板處理裝置及基板處理裝置之基板搬送方法,其於各處理室並行處理被處理基板時,可使來自基板收納容器之被處理基板之搬送時序配合各處理室之處理時間,依此則,可提升各處理室之稼動效率,可提升基板處理裝置全體之作業效率。According to the present invention as described above, it is possible to provide a substrate processing method for a substrate processing apparatus and a substrate processing apparatus. When the processing substrates are processed in parallel in each processing chamber, the processing timing of the substrates to be processed from the substrate storage container can be matched with the processing chambers. According to this, the processing efficiency of each processing chamber can be improved, and the working efficiency of the entire substrate processing apparatus can be improved.

100、200...基板處理裝置100, 200. . . Substrate processing device

110...處理單元110. . . Processing unit

120...搬送單元120. . . Transport unit

130...搬送室130. . . Transfer room

132(132A~132C)...卡匣台132 (132A~132C). . . Card

134(134A~134C)...卡匣容器134 (134A~134C). . . Card container

136(136A~136C)...柵閥136 (136A~136C). . . Gate valve

137...定向器137. . . Orienter

138...旋轉載置台138. . . Rotating table

139...光學感測器139. . . Optical sensor

140(140A~140C)...處理室140 (140A~140C). . . Processing room

140D...處理室或檢測室140D. . . Processing room or testing room

142(142A~142D)...載置台142 (142A~142D). . . Mounting table

144(144A~144D)...柵閥144 (144A~144D). . . Gate valve

150...共通搬送室150. . . Common transfer room

160(160 M:160 N)...載入鎖定室160 (160 M: 160 N). . . Loading lock room

170...搬送單元側搬送機構170. . . Transport unit side transport mechanism

172...基台172. . . Abutment

174...導軌174. . . guide

176...線性馬達驅動機構176. . . Linear motor drive mechanism

180...處理單元側搬送機構180. . . Processing unit side conveying mechanism

190...控制部190. . . Control department

圖1為本發明實施形態之基板處理裝置之構成例之圖。Fig. 1 is a view showing an example of the configuration of a substrate processing apparatus according to an embodiment of the present invention.

圖2為該實施形態之算出晶圓搬送時序之處理流程圖。Fig. 2 is a flow chart showing the process of calculating the wafer transfer timing in the embodiment.

圖3為圖2之晶圓搬出數比之算出處理之具體例之流程圖。FIG. 3 is a flow chart showing a specific example of the calculation process of the wafer carry-out ratio of FIG. 2.

圖4為圖2之晶圓搬出間隔之算出處理之具體例之流程圖。Fig. 4 is a flow chart showing a specific example of the process of calculating the wafer carry-out interval of Fig. 2;

圖5為2個處理室之晶圓之處理時程之圖。Figure 5 is a diagram showing the processing time of wafers in two processing chambers.

圖6為本發明實施形態之基板處理裝置之另一構成例之圖。Fig. 6 is a view showing another configuration example of the substrate processing apparatus according to the embodiment of the present invention.

圖7為3個處理室之晶圓之處理時程之圖。Figure 7 is a diagram showing the processing time of wafers in three processing chambers.

圖8為4個處理室之晶圓之處理時程之圖。Figure 8 is a diagram showing the processing time of wafers in four processing chambers.

圖9為圖2之晶圓搬出數比之算出處理之另一具體例之流程圖。Fig. 9 is a flow chart showing another specific example of the calculation processing of the wafer carry-out ratio of Fig. 2;

圖10為圖2之晶圓搬出間隔之算出處理之另一具體例之流程圖。Fig. 10 is a flow chart showing another specific example of the process of calculating the wafer carry-out interval of Fig. 2;

圖11為4個處理室之晶圓之處理時程之圖。Figure 11 is a diagram showing the processing time of wafers in four processing chambers.

100...基板處理裝置100. . . Substrate processing device

110...處理單元110. . . Processing unit

120...搬送單元120. . . Transport unit

130...搬送室130. . . Transfer room

132A~132B...卡匣台132A~132B. . . Card

134A~134B...卡匣容器134A~134B. . . Card container

136A~136B...柵閥136A~136B. . . Gate valve

137...定向器137. . . Orienter

138...旋轉載置台138. . . Rotating table

139...光學感測器139. . . Optical sensor

140A~140B...處理室140A~140B. . . Processing room

142A~142B...載置台142A~142B. . . Mounting table

144A~144B...柵閥144A~144B. . . Gate valve

150...共通搬送室150. . . Common transfer room

154M、154N...柵閥154M, 154N. . . Gate valve

160M、160N...載入鎖定室160M, 160N. . . Loading lock room

162M、162N...柵閥162M, 162N. . . Gate valve

170...搬送單元側搬送機構170. . . Transport unit side transport mechanism

172...基台172. . . Abutment

174...導軌174. . . guide

176...線性馬達驅動機構176. . . Linear motor drive mechanism

180...處理單元側搬送機構180. . . Processing unit side conveying mechanism

190...控制部190. . . Control department

Claims (9)

一種基板處理裝置,其特徵為具備:處理單元,具有多數處理室用於對被處理基板進行特定處理;搬送單元,連接於該處理單元;搬送單元側搬送機構,設於上述搬送單元,用於將基板收納容器收容之上述被處理基板搬送至上述處理單元;及處理單元側搬送機構,設於上述處理單元,用於將上述搬送單元所搬送之上述被處理基板搬送至上述處理室;具備:控制手段,用於依據由上述基板收納容器搬出上述被處理基板時之上述各處理室的上述被處理基板之搬出數比及搬出間隔,算出由上述基板收納容器對上述各處理室搬送之上述被處理基板之搬送時序,依該搬送時序由上述基板收納容器搬出上述被處理基板;上述控制手段,係依據上述各處理室之上述被處理基板之處理時間來決定基準搬出間隔之條件下,依據在該基準搬出間隔之各區間內於上述各處理室可以處理的上述被處理基板之最大片數,而求出上述被處理基板之搬出數比;上述被處理基板之搬出間隔,係被設為在上述各處理室以上述基準搬出間隔將上述被處理基板之搬出數比之片數,於上述各處理室之上述被處理基板之每一個處理時間1片片予以搬出的間隔。 A substrate processing apparatus comprising: a processing unit having a plurality of processing chambers for performing specific processing on a substrate to be processed; a transport unit connected to the processing unit; and a transport unit side transporting mechanism provided in the transport unit for The processing substrate to be processed in the substrate storage container is transported to the processing unit; and the processing unit side transporting mechanism is provided in the processing unit for transporting the processed substrate transported by the transport unit to the processing chamber; The control means for calculating the number of the substrates to be transported by the substrate storage container in accordance with the number of the substrates to be processed and the carry-out interval when the substrate to be processed is carried out by the substrate storage container Processing the substrate transfer timing, and the substrate to be processed is carried out from the substrate storage container according to the transfer timing; and the control means determines the reference carry-out interval based on the processing time of the processed substrate in each of the processing chambers. Each of the intervals of the reference carry-out interval is in the above The number of the substrates to be processed that can be processed by the chamber is determined, and the ratio of the number of the substrates to be processed is determined. The interval at which the substrates are processed is set to be in the processing chambers at the reference carrying interval. The number of sheets of the substrate to be processed is the interval at which one sheet is carried out for each processing time of the substrate to be processed in each of the processing chambers. 如申請專利範圍第1項之基板處理裝置,其中上述被處理基板之搬出數比,係依據上述各處理室之 上述被處理基板之處理時間,假設上述各處理室之中處理時間最長之處理室之處理時間設為上述基準搬出間隔時,依在該基準搬出間隔之區間內於其他處理室可處理之上述被處理基板之最大片數而算出。 The substrate processing apparatus of claim 1, wherein the ratio of the number of the substrates to be processed is based on the processing chambers In the processing time of the substrate to be processed, it is assumed that the processing time of the processing chamber having the longest processing time among the processing chambers is the reference carrying-out interval, and the processing can be processed in another processing chamber in the interval of the reference carrying-out interval. Calculated by processing the maximum number of substrates. 如申請專利範圍第1或2項之基板處理裝置,其中上述基準搬出間隔,係依據上述各處理室之基準搬出間隔之各區間內之等待時間,使該等待時間變短而予以決定。 The substrate processing apparatus according to claim 1 or 2, wherein the reference carry-out interval is determined by shortening the waiting time in accordance with a waiting time in each section of the reference carry-out interval of each of the processing chambers. 一種基板處理裝置之基板搬送方法,其特徵為該基板處理裝置具備:處理單元,具有多數處理室用於對被處理基板進行特定處理;搬送單元,連接於該處理單元;搬送單元側搬送機構,設於上述搬送單元,用於將基板收納容器收容之上述被處理基板搬送至上述處理單元;及處理單元側搬送機構,設於上述處理單元,用於將上述搬送單元所搬送之上述被處理基板搬送至上述處理室者;依據由上述基板收納容器搬出上述被處理基板時之上述各處理室的上述被處理基板之搬出數比及搬出間隔,算出由上述基板收納容器對上述各處理室搬送之上述被處理基板之搬送時序;上述被處理基板之搬出數比,係依據上述各處理室之上述被處理基板之處理時間來決定基準搬出間隔之條件下,依據在該基準搬出間隔之各區間內於上述各處理室可以處理的上述被處理基板之最大片數而予以求出者; 上述被處理基板之搬出間隔,係被設為在上述各處理室以上述基準搬出間隔將上述被處理基板之搬出數比之片數,於上述各處理室之上述被處理基板之每一個處理時間1片片予以搬出的間隔;進行上述被處理基板之處理時,係依據上述搬送時序由上述基板收納容器搬出上述被處理基板。 A substrate transfer method of a substrate processing apparatus, comprising: a processing unit having a plurality of processing chambers for performing specific processing on a substrate to be processed; a transport unit connected to the processing unit; and a transport unit side transport mechanism; The transport unit is configured to transport the substrate to be processed in the substrate storage container to the processing unit, and the processing unit side transfer mechanism is provided in the processing unit, and the substrate to be processed is transported by the transport unit And the conveyance to the processing chamber; and the number of the substrates to be processed in the processing chambers when the substrate to be processed is carried out by the substrate storage container, and the carrying-out interval are calculated, and the substrate storage container is transported to the processing chambers. The transport timing of the substrate to be processed; the ratio of the number of transported substrates to be processed is determined according to the processing time of the substrate to be processed in each of the processing chambers, and the basis of the reference carry-out interval is determined according to the interval of the reference carry-out interval The above-mentioned processed substrate that can be processed in each of the above processing chambers The maximum number of pieces to be obtained by; The carrying-out interval of the substrate to be processed is set to be the number of times the number of the substrates to be processed is compared in the respective processing chambers at the reference carrying-out interval, and the processing time of each of the processed substrates in the respective processing chambers The interval at which one sheet is carried out; when the substrate to be processed is processed, the substrate to be processed is carried out from the substrate storage container in accordance with the transfer timing. 如申請專利範圍第4項之基板處理裝置之基板搬送方法,其中上述被處理基板之搬出數比,係依據上述各處理室之上述被處理基板之處理時間,假設上述各處理室之中處理時間最長之處理室之處理時間設為上述基準搬出間隔時,依在該基準搬出間隔之區間內於其他處理室可處理之上述被處理基板之最大片數而算出。 The substrate transfer method of the substrate processing apparatus according to the fourth aspect of the invention, wherein the number of the substrates to be processed is assumed to be the processing time in each of the processing chambers based on the processing time of the substrate to be processed in each of the processing chambers. When the processing time of the longest processing chamber is the reference carrying-out interval, the maximum number of the substrates to be processed that can be processed in the other processing chambers in the interval of the reference carrying-out interval is calculated. 如申請專利範圍第4或5項之基板處理裝置之基板搬送方法,其中上述基準搬出間隔,係依據上述各處理室之基準搬出間隔之各區間內之等待時間,使該等待時間變短而予以決定。 The substrate transfer method of the substrate processing apparatus according to the fourth or fifth aspect of the invention, wherein the reference carry-out interval is made based on a waiting time in each section of the reference carry-out interval of each of the processing chambers, and the waiting time is shortened. Decide. 一種基板處理裝置之基板搬送方法,其特徵為:依預先算出之搬送時序、依序使基板收納容器收容之多數上述被處理基板分別朝應處理之處理室搬送,依此而於多數處理室並行對上述被處理基板施予處理的基板處理裝置之基板搬送方法;具有以下步驟: 算出依上述各處理室中上述被處理基板之處理時間而被決定之基準搬出間隔之區間內之上述各個處理室之上述被處理基板之搬出數比的步驟;及依據上述被處理基板之搬出數比而算出上述各個處理室之上述被處理基板之搬出間隔的步驟;上述搬送時序,係依據在上述各個步驟算出的上述被處理基板之搬出數比及搬出間隔而被求出。 A substrate transporting method of a substrate processing apparatus, wherein a plurality of the substrates to be processed, which are sequentially stored in a substrate storage container, are sequentially transported to a processing chamber to be processed in accordance with a predetermined transfer timing, and thus are paralleled in a plurality of processing chambers. A substrate transfer method of a substrate processing apparatus that performs the processing on the substrate to be processed; and has the following steps: a step of calculating a ratio of the number of substrates to be processed in each of the processing chambers in a section of the reference carrying interval determined in accordance with a processing time of the substrate to be processed in each of the processing chambers; and a number of carrying out the substrates to be processed The step of calculating the carry-out interval of the substrate to be processed in each of the processing chambers is calculated, and the transfer timing is obtained based on the number of carry-outs of the substrate to be processed and the carry-out interval calculated in the respective steps. 如申請專利範圍第7項之基板處理裝置之基板搬送方法,其中算出上述被處理基板之搬出數比的步驟,係具有以下步驟:假設在上述各處理室之中處理時間最長之處理室處理1片上述被處理基板之處理時間設為上述基準搬出間隔時,算出在該基準搬出間隔之區間內於其他處理室可處理之上述被處理基板之最大片數n的步驟;假設在上述處理時間最長之處理室處理1片被處理基板之處理時間為基準搬出間隔時,算出上述基準搬出間隔之區間內之上述其他處理室之等待時間的步驟;假設在上述其他處理室處理n+1片上述被處理基板之處理時間為基準搬出間隔時,算出上述基準搬出間隔之區間內之上述處理時間最長之處理室之等待時間的步驟;及比較彼等之等待時間,當上述處理時間最長之處理室之等待時間為上述其他處理室之等待時間以下時,將上述 基準搬出間隔決定為上述處理時間最長之處理室處理1片被處理基板之處理時間之同時,將上述被處理基板之搬出數比設為1:n,當上述處理時間最長之處理室之等待時間大於上述其他處理室之等待時間時,將上述基準搬出間隔決定為上述其他處理室處理n+1片上述被處理基板之處理時間之同時,將上述被處理基板之搬出數比設為1:n+1;算出上述被處理基板之搬出間隔之步驟,係具有以下步驟:當上述被處理基板之搬出數比為1:n時,上述處理時間最長之處理室之上述被處理基板之搬出數間隔,係設為在上述基準搬出間隔各1片被搬出之間隔,上述其他處理室之上述被處理基板之搬出數間隔,係設為在上述基準搬出間隔內各n片、於該每一處理時間各1片搬出之間隔,當上述被處理基板之搬出數比為1:n+1時,上述處理時間最長之處理室之上述被處理基板之搬出數間隔,係設為在上述基準搬出間隔各1片被搬出之間隔,上述其他處理室之上述被處理基板之搬出數間隔,係設為在上述基準搬出間隔各n+1片、於該每一處理時間各1片搬出之間隔的步驟。 The substrate transfer method of the substrate processing apparatus according to the seventh aspect of the invention, wherein the step of calculating the number of times of transporting the substrate to be processed has the following step: assuming that the processing chamber having the longest processing time among the processing chambers is processed 1 When the processing time of the substrate to be processed is the reference carrying-out interval, the step of calculating the maximum number n of substrates to be processed that can be processed in another processing chamber in the interval of the reference carrying interval is assumed; When the processing time of the processing substrate for one processing chamber is the reference carrying-out interval, the step of calculating the waiting time of the other processing chambers in the interval of the reference carrying-out interval is calculated; and it is assumed that n+1 pieces of the above-mentioned objects are processed in the other processing chambers. When the processing time of the processing substrate is the reference carrying-out interval, the step of calculating the waiting time of the processing chamber having the longest processing time in the interval of the reference carrying-out interval is calculated; and the waiting time is compared, and the processing chamber having the longest processing time is When the waiting time is below the waiting time of the other processing chambers mentioned above, the above will be The reference carry-out interval is determined as the processing time for processing the one substrate to be processed in the processing chamber having the longest processing time, and the ratio of the number of carried out substrates to be processed is 1:n, and the waiting time of the processing chamber having the longest processing time When the waiting time is longer than the other processing chambers, the reference carrying-out interval is determined as the processing time for the other processing chambers to process the n+1 pieces of the processed substrate, and the number of the substrates to be processed is set to 1:n. +1; a step of calculating a carry-out interval of the substrate to be processed, wherein the number of carry-outs of the substrate to be processed in the processing chamber having the longest processing time is the same when the number of times of transporting the substrate to be processed is 1:n The interval between the substrates to be carried out at the reference carry-out interval is the interval at which the number of the substrates to be processed in the other processing chambers is n pieces in the reference carry-out interval. When the number of carry-outs of the substrate to be processed is 1:n+1, the processing substrate of the processing chamber having the longest processing time is The number of times of unloading is set to be at intervals in which one of the reference transport intervals is carried out, and the number of times of transporting the substrate to be processed in the other processing chamber is n+1 pieces in the reference carry-out interval. The step of moving out one piece of each processing time. 如申請專利範圍第7項之基板處理裝置之基板搬送方法,其中算出上述被處理基板之搬出數比的步驟,係具有以下 步驟:假設在上述各處理室之中處理時間最長之處理室處理m片上述被處理基板之處理時間設為上述基準搬出間隔時,算出在該基準搬出間隔之區間內於其他處理室可處理之上述被處理基板之最大片數n的步驟;假設在上述處理時間最長之處理室處理m片被處理基板之處理時間為基準搬出間隔時,算出上述基準搬出間隔之區間內之上述其他處理室之等待時間的步驟;假設在上述其他處理室處理n+1片上述被處理基板之處理時間為基準搬出間隔時,算出上述基準搬出間隔之區間內之上述處理時間最長之處理室之等待時間的步驟;變化上述m算出上述被處理基板之最大片數n、上述其他處理室之等待時間、上述處理時間最長之處理室之等待時間,決定上述其他處理室之等待時間與上述處理時間最長之處理室之等待時間成為最小的m、n的步驟:及比較所決定之m、n時之上述其他處理室之等待時間與上述處理時間最長之處理室之等待時間,當上述處理時間最長之處理室之等待時間為上述其他處理室之等待時間以下時,將上述基準搬出間隔決定為上述處理時間最長之處理室處理m片被處理基板之處理時間之同時,將上述被處理基板之搬出數比設為m:n,當上述處理時間最長之處理室之等待時間大於上述其他處理室之等待時間時,將上述基準搬出間隔決定為上述其他處理室處理n+1片上述被處理基板之處理時間之同時,將上述被處理基板之搬 出數比設為m:n+1;算出上述被處理基板之搬出間隔之步驟,係具有以下步驟:當上述被處理基板之搬出數比為m:n時,上述處理時間最長之處理室之上述被處理基板之搬出數間隔,係設為在上述基準搬出間隔內各m片、於該每一處理時間各1片被搬出之間隔,上述其他處理室之上述被處理基板之搬出數間隔,係設為在上述基準搬出間隔內各n片、於該每一處理時間各1片搬出之間隔,當上述被處理基板之搬出數比為m:n+1時,上述處理時間最長之處理室之上述被處理基板之搬出數間隔,係設為在上述基準搬出間隔各m片、於該每一處理時間各1片搬出之間隔,上述其他處理室之上述被處理基板之搬出數間隔,係設為在上述基準搬出間隔各n+1片、於該每一處理時間各1片被搬出之間隔的步驟。 The substrate transfer method of the substrate processing apparatus of the seventh aspect of the invention, wherein the step of calculating the number of carry-out ratios of the substrate to be processed has the following Step: When it is assumed that the processing time for processing the m-th substrate to be processed in the processing chamber having the longest processing time among the processing chambers is the reference carrying-out interval, it is calculated that it can be processed in another processing chamber in the interval of the reference carrying-out interval. a step of maximizing the number n of substrates to be processed; and assuming that the processing time for processing the m substrates to be processed in the processing chamber having the longest processing time is the reference carrying interval, calculating the other processing chambers in the interval of the reference carrying interval a step of waiting for a time; assuming that the processing time of the n+1 pieces of the substrate to be processed is the reference carry-out interval in the other processing chamber, the step of calculating the waiting time of the processing chamber having the longest processing time in the interval of the reference carrying interval Changing m to calculate the maximum number n of substrates to be processed, the waiting time of the other processing chambers, and the waiting time of the processing chamber having the longest processing time, and determine the processing chamber in which the waiting time of the other processing chambers and the processing time are the longest. The steps of waiting time to become the smallest m, n: and comparing the determined m, n The waiting time of the other processing chamber is the waiting time of the processing chamber having the longest processing time, and when the waiting time of the processing chamber having the longest processing time is equal to or less than the waiting time of the other processing chamber, the reference carrying out interval is determined as The processing time of the m-processed substrate is processed by the processing chamber having the longest processing time, and the ratio of the number of the substrates to be processed is set to m:n, and the waiting time of the processing chamber having the longest processing time is larger than that of the other processing chambers. In the waiting time, the reference carrying-out interval is determined as the processing time in which the other processing chamber processes n+1 pieces of the processed substrate, and the substrate to be processed is moved. The ratio of the number of outputs is set to m:n+1; the step of calculating the carry-out interval of the substrate to be processed has the step of: when the number of carry-outs of the substrate to be processed is m:n, the processing chamber having the longest processing time The number of times of carrying out the substrate to be processed is an interval between each of the m pieces in the reference carry-out interval and one piece at a time of each processing time, and the number of times of transporting the substrate to be processed in the other processing chamber is The interval between the n pieces in the reference carry-out interval and the one out of each of the processing times, and the processing time in which the processing time is the longest when the number of the substrates to be processed is m:n+1 The number of times of carrying out the substrate to be processed is an interval between each of the m-th order of the reference carry-out interval and one sheet at a time of each processing time, and the number of times of transporting the substrate to be processed in the other processing chamber is It is a step of setting the interval between n+1 pieces of the reference carry-out interval and one piece of each of the processing times.
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Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100978857B1 (en) * 2008-07-16 2010-08-31 세메스 주식회사 Method and equipment for treating substrate
JP5392190B2 (en) * 2010-06-01 2014-01-22 東京エレクトロン株式会社 Substrate processing system and substrate processing method
JP6568335B2 (en) * 2013-03-29 2019-08-28 芝浦メカトロニクス株式会社 Processing system and processing method
JP6298318B2 (en) * 2014-02-25 2018-03-20 株式会社Screenホールディングス Substrate processing method and substrate processing apparatus
CN105336652B (en) * 2014-06-26 2019-05-31 北京北方华创微电子装备有限公司 Chip transmission control method and system
JP6256388B2 (en) * 2015-03-10 2018-01-10 トヨタ自動車株式会社 Work processing system and processing method
JP7311553B2 (en) * 2021-03-29 2023-07-19 株式会社Kokusai Electric SUBSTRATE PROCESSING APPARATUS, SEMICONDUCTOR DEVICE MANUFACTURING METHOD AND PROGRAM

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20030028282A1 (en) * 1998-12-31 2003-02-06 Hilario Oh Method and apparatus for resolving conflicts in a substrate processing system
US20030195655A1 (en) * 2002-04-16 2003-10-16 Spano Philip H. Override having built in audit trail for medication dispensing and administering systems
US20040029300A1 (en) * 2000-12-08 2004-02-12 Kiyohito Iijima Semiconductor processing system and method of transferring workpiece
US20040043513A1 (en) * 2000-11-07 2004-03-04 Shigeru Ishizawa Method of transferring processed body and processing system for processed body

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO1997034742A1 (en) * 1996-03-18 1997-09-25 Komatsu Ltd. Control device for a work carrying system
US5928389A (en) * 1996-10-21 1999-07-27 Applied Materials, Inc. Method and apparatus for priority based scheduling of wafer processing within a multiple chamber semiconductor wafer processing tool
US6224312B1 (en) * 1996-11-18 2001-05-01 Applied Materials, Inc. Optimal trajectory robot motion
JP3193904B2 (en) * 1997-08-01 2001-07-30 株式会社日立国際電気 Substrate transfer control method and substrate product manufacturing method
JP2000021948A (en) * 1998-06-30 2000-01-21 Toshiba Corp Semiconductor manufacture device/system
JP3748193B2 (en) * 1999-03-17 2006-02-22 株式会社日立製作所 Vacuum processing apparatus and operation method thereof
US6291252B1 (en) * 1999-06-30 2001-09-18 Advanced Micro Devices, Inc. Automatic method to eliminate first-wafer effect
US6417014B1 (en) * 1999-10-19 2002-07-09 Advanced Micro Devices, Inc. Method and apparatus for reducing wafer to wafer deposition variation
JP2001351848A (en) * 2000-06-07 2001-12-21 Tokyo Electron Ltd Substrate treatment system and substrate treatment method
JP2002237507A (en) * 2000-12-08 2002-08-23 Tokyo Electron Ltd Processing system, and method for conveying element to be processed of the processing system
JP2001319959A (en) * 2001-03-30 2001-11-16 Tokyo Electron Ltd Reduced pressure and normal pressure treater
JP3936948B2 (en) * 2004-08-19 2007-06-27 カネソウ株式会社 Chain stop device of car stopper strut
JP4557986B2 (en) * 2004-11-24 2010-10-06 株式会社日立国際電気 Substrate processing apparatus and semiconductor device manufacturing method

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20030028282A1 (en) * 1998-12-31 2003-02-06 Hilario Oh Method and apparatus for resolving conflicts in a substrate processing system
US20040043513A1 (en) * 2000-11-07 2004-03-04 Shigeru Ishizawa Method of transferring processed body and processing system for processed body
US20040029300A1 (en) * 2000-12-08 2004-02-12 Kiyohito Iijima Semiconductor processing system and method of transferring workpiece
US20030195655A1 (en) * 2002-04-16 2003-10-16 Spano Philip H. Override having built in audit trail for medication dispensing and administering systems

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