TWI406119B - 用以在一區域內遠端控制壓力的系統及一化學機械研磨機系統 - Google Patents

用以在一區域內遠端控制壓力的系統及一化學機械研磨機系統 Download PDF

Info

Publication number
TWI406119B
TWI406119B TW96101519A TW96101519A TWI406119B TW I406119 B TWI406119 B TW I406119B TW 96101519 A TW96101519 A TW 96101519A TW 96101519 A TW96101519 A TW 96101519A TW I406119 B TWI406119 B TW I406119B
Authority
TW
Taiwan
Prior art keywords
pressure
flow rate
measurement
chamber
zone
Prior art date
Application number
TW96101519A
Other languages
English (en)
Other versions
TW200745804A (en
Inventor
Ali Shajii
Siddharth P Nagarkatti
Gordon Hill
Original Assignee
Mks Instr Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mks Instr Inc filed Critical Mks Instr Inc
Publication of TW200745804A publication Critical patent/TW200745804A/zh
Application granted granted Critical
Publication of TWI406119B publication Critical patent/TWI406119B/zh

Links

Classifications

    • G—PHYSICS
    • G05—CONTROLLING; REGULATING
    • G05D—SYSTEMS FOR CONTROLLING OR REGULATING NON-ELECTRIC VARIABLES
    • G05D16/00—Control of fluid pressure
    • G05D16/20—Control of fluid pressure characterised by the use of electric means
    • G05D16/2006—Control of fluid pressure characterised by the use of electric means with direct action of electric energy on controlling means
    • G05D16/2013—Control of fluid pressure characterised by the use of electric means with direct action of electric energy on controlling means using throttling means as controlling means
    • G05D16/2026—Control of fluid pressure characterised by the use of electric means with direct action of electric energy on controlling means using throttling means as controlling means with a plurality of throttling means
    • G05D16/206—Control of fluid pressure characterised by the use of electric means with direct action of electric energy on controlling means using throttling means as controlling means with a plurality of throttling means the plurality of throttling means being arranged for the control of a plurality of diverging pressures from a single pressure
    • G—PHYSICS
    • G05—CONTROLLING; REGULATING
    • G05D—SYSTEMS FOR CONTROLLING OR REGULATING NON-ELECTRIC VARIABLES
    • G05D16/00—Control of fluid pressure
    • G05D16/20—Control of fluid pressure characterised by the use of electric means
    • G—PHYSICS
    • G05—CONTROLLING; REGULATING
    • G05D—SYSTEMS FOR CONTROLLING OR REGULATING NON-ELECTRIC VARIABLES
    • G05D16/00—Control of fluid pressure
    • G05D16/20—Control of fluid pressure characterised by the use of electric means
    • G05D16/2006—Control of fluid pressure characterised by the use of electric means with direct action of electric energy on controlling means
    • G05D16/2013—Control of fluid pressure characterised by the use of electric means with direct action of electric energy on controlling means using throttling means as controlling means
    • G05D16/2026—Control of fluid pressure characterised by the use of electric means with direct action of electric energy on controlling means using throttling means as controlling means with a plurality of throttling means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/30625—With simultaneous mechanical treatment, e.g. mechanico-chemical polishing
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T137/00—Fluid handling
    • Y10T137/7722—Line condition change responsive valves
    • Y10T137/7758—Pilot or servo controlled
    • Y10T137/7761—Electrically actuated valve
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T137/00—Fluid handling
    • Y10T137/7722—Line condition change responsive valves
    • Y10T137/7837—Direct response valves [i.e., check valve type]
    • Y10T137/7838—Plural
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T137/00—Fluid handling
    • Y10T137/8593—Systems
    • Y10T137/87169—Supply and exhaust
    • Y10T137/87193—Pilot-actuated
    • Y10T137/87209—Electric
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T137/00—Fluid handling
    • Y10T137/8593—Systems
    • Y10T137/87265—Dividing into parallel flow paths with recombining
    • Y10T137/8733—Fluid pressure regulator in at least one branch
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T137/00—Fluid handling
    • Y10T137/8593—Systems
    • Y10T137/87265—Dividing into parallel flow paths with recombining
    • Y10T137/8741—With common operator
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T137/00—Fluid handling
    • Y10T137/8593—Systems
    • Y10T137/87265—Dividing into parallel flow paths with recombining
    • Y10T137/87507—Electrical actuator
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T137/00—Fluid handling
    • Y10T137/8593—Systems
    • Y10T137/877—With flow control means for branched passages
    • Y10T137/87708—With common valve operator
    • Y10T137/87772—With electrical actuation

Landscapes

  • Physics & Mathematics (AREA)
  • Fluid Mechanics (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Automation & Control Theory (AREA)
  • Control Of Fluid Pressure (AREA)
  • Measuring Fluid Pressure (AREA)

Description

用以在一區域內遠端控制壓力的系統及一化學機械研磨機系統
本發明關於一種壓力控制系統與方法，特別是關於一種可遙控一或多個遠端區域內壓力的壓力控制系統與方法。
在一些應用當中，可能有必要調整位於遠處之區域內的壓力。舉例來說，一些機器和設備可能包含在設備作業期間經加壓或排空的腔室。此等機器的實例非侷限性來說可包含化學機械研磨(CMP)機。
一在一測量室內的壓力感測器可能僅測量該測量室內的壓力，不測量相對於該感測器位在遠處之一區域內的壓力。因此，一僅使用由位在該測量室內之一壓力感測器測得之壓力量測值的壓力控制系統可能必須假設該測量室內之壓力等於遠端區域內之壓力。但該測量室內之壓力常常不等於區域壓力。舉例來說，當該測量室內發生局域性壓力瞬變時，該測量室內之壓力不會等於區域壓力。這可導致該壓力控制系統的表現實質變差。
因此，需要能準確控制遠處區域內壓力的系統和方法。
一用於遙控一區域內之壓力的系統包含一壓力感測器、一閥系統、一區域壓力評估器、及一控制器。該壓力感測器經建構測量一可透過一導管連接到該區域且遠離該區域之圍蔽空間(譬如測量室)內的壓力。該閥系統經建構調整一流體流入和流出該圍蔽空間及透過該導管流入該區域內的流量。該閥系統包含至少一經建構調整該流體流入該圍蔽空間內之一輸入流率的進入比例閥，及一經建構調整該流體流出該圍蔽空間外之一輸出流率的排出比例閥。該區域壓力評估器經建構以該壓力感測器測得之壓力之一函數及該導管之已知特性之一函數估算一估計壓力。該控制器經建構藉由操作該進入比例閥和該排出比例閥以便將該輸入流率和該輸出流率控制成得自該區域壓力評估器之該估計壓力及該區域之一壓力設定值的一函數的方式調整該區域內之壓力。
本發明提出一種用以遙控i個區域每一者內之壓力的系統，該等區域分別可透過導管i連接到i個圍蔽空間，其中該系統藉由控制一流體流入和流出每一圍蔽空間i之流量及透過每一導管i流入每一區域i內之流量的方式進行遙控(i＝1,...,N)。該系統包含一壓力測量系統、一閥系統、一區域壓力評估器、及一控制器。該壓力測量系統經建構測量該等i個圍蔽空間每一者內之流體壓力。該閥系統針對每一圍蔽空間i包含至少一經建構調整該流體流入該圍蔽空間i內之一輸入流率的進入比例閥，及至少一經建構調整該流體流出該圍蔽空間i外之一輸出流率的排出比例閥。
該區域壓力評估器耦接於該壓力測量系統。該區域壓力評估器經建構針對每一區域i從該壓力感測器系統接收該圍蔽空間i內之一實測壓力，且以該圍蔽空間i內之實測壓力之一函數及該導管i和該區域i之已知特性之一函數估算該區域i內之一估計壓力。該控制器經建構藉由操作每一圍蔽空間i之進入比例閥和排出比例閥以便將該流體流入該圍蔽空間i內之輸入流率和該流體流出該圍蔽空間i外之輸出流率控制成該區域i之一壓力設定值及得自該區域壓力評估器之該區域i內估計壓力的一函數的方式控制每一區域i內之壓力。
本發明提出一種遙控i個區域每一者內之壓力的方法，該等區域分別可透過i個導管連接到i個圍蔽空間，其中藉由控制一流體流入和流出每一圍蔽空間i之流量及透過每一導管i流入每一區域i內之流量的方式進行遙控(i＝1,...,N)。該方法包含測量該等i個圍蔽空間內之流體壓力。該方法更包含以該圍蔽空間i內之實測壓力之一函數及該導管i和該區域i之已知特性之一函數估算每一區域i內之一估計壓力。該方法更包含針對每一區域i操作每一圍蔽空間i之一進入比例閥和一排出比例閥以便將該流體流入該圍蔽空間i內之輸入流率和該流體流出該圍蔽空間i外之輸出流率控制成該區域i之一壓力設定值及該區域i內該估計壓力的一函數，藉此依據該壓力設定值調整該區域i內之壓力。
在本說明書中，區域一辭應解釋為一封閉容積。本發明提出一種利用一以觀測者為本的方案控制遠端區域內之壓力的系統及方法，該方案準確地評估壓力欲受控制之每一遠端區域的壓力。藉由運用壓力控制系統中之遠端區域的估計壓力，閉迴圈控制表現可被大幅提昇。舉例來說，發生在測量室內但不發生在遠端區域本身內的局域性壓力瞬變可被克服。
圖1是一功能方塊圖，其例示一依據本發明一實施例調整一或多個遠端區域Zi (i＝1,...,N)內之壓力的壓力控制系統100。如圖1所示，所有區域Zi 被一單一加壓流體源40進給且排放到一單一真空排放口30內。概要地說，壓力控制系統100可包含一壓力測量和流體控制系統110(在圖2更詳細示出)、一區域壓力評估器120、及一控制器130。
壓力控制系統100可利用一區域壓力評估器120以透過一導管Fi (示於圖2)連接到區域Zi 之一圍蔽空間bi (示於圖2)內之實測壓力為基礎評估遠端區域Zi 內之壓力且藉由以得自該區域壓力評估器120之該估計壓力為基礎控制一流體流入和流出該圍蔽空間之流量而遙控每一遠端區域Zi 內之壓力。一般而言，該等圍蔽空間可為壓力測量室，然亦可使用任何其他類型能夠將該流體封閉於其內的封閉容積。
壓力測量和流體控制系統110可包含一壓力測量系統，及一流體控制系統。110中之壓力測量系統舉例來說可包含複數個壓力感測器，每一壓力感測器連接到一圍蔽空間，且經建構測量該圍蔽空間內之壓力。110中之流體控制系統可包含一控制流入和流出每一圍蔽空間之流體流率的閥系統。
區域壓力評估器120可從壓力測量系統接收壓力量測值，且亦可接收(譬如從一顧客、一操作者、或其他人接收)系統100之物理參數，此等參數舉例來說可包含導管和區域之已知特性。區域壓力評估器120更可經建構利用該等壓力量測值和物理參數運用下文詳述之計算方法計算並提供每一區域的壓力估計值。
控制器130亦可接收遠端區域Zi 每一者之壓力設定值，且可利用該等區域壓力估計值(得自區域壓力評估器120)及壓力設定值來控制該流體控制系統。特定言之，控制器130可控制該閥系統使得流入和流出每一圍蔽空間之流體流率導致每一區域內之壓力依據該等壓力設定值得到調整。
在例示實施例中，該閥系統可針對每一圍蔽空間包含至少一經建構調整流體流入圍蔽空間內之一輸入流率的進入比例閥，及一經建構調整流體流出圍蔽空間外之一輸出流率的排出比例閥。控制器130可經建構藉由操作該進入比例閥和該排出比例閥以便將該輸入流率和輸出流率控制成得自該區域壓力評估器之估計壓力的一函數和一壓力設定值的一函數而調整每一區域內之壓力。
如圖1簡要示出，控制器130可向方塊110內之閥系統(在下文參照圖2更詳細說明)發送一輸入流量命令訊號和一輸出流量命令訊號，以便分別依據該輸入流量命令訊號和輸出流量命令訊號控制輸入流率和輸出流率。在一範例實施例中，該控制器可經建構執行流入和流出每一圍蔽空間之輸入流率和輸出流率之PI(比例積分)控制(詳見下文)，但亦可採用其他控制方法。儘管控制系統和方法係以一比例加積分(PI)型控制系統和方法作說明，然亦有多種其他類型之控制系統和方法可用，其中非侷限性包含比例型、積分型、比例加微分(PD)型、及比例加積分加微分(PID)型回授控制系統和方法。
圖2更詳細地示出可分別透過i個導管Fi 連接到i個圍蔽空間bi 的i個區域(i＝1,...,N)，每一區域i內之壓力經由控制一流體流入和流出每一圍蔽空間i及透過每一導管i進入每一區域i內之流量的方式受調整。圖2亦示出用在本發明所述壓力控制系統一實施例中之一壓力測量和流體控制系統。
如圖2所示，示於圖1方塊10內之遠端區域Zi 可能可分別透過i個導管Fi 連接到i個圍蔽空間bi (i＝1,...,N)。壓力測量和流體控制系統110包含i個圍蔽空間或測量室〝bi 〞，其中i＝1至N且等於遠端區域Zi 之數量。每一測量室bi 包含一經建構調整流入bi 之流體輸入流率的進入閥112及一經建構調整流出bi 之流體輸出流率的排出閥116。每一測量室bi 沿一從加壓流體源40通過一進入歧管〝L〞到用於圍蔽空間bi 之進入閥112且離開用於圍蔽空間bi 之排出閥116經由一流量限制歧管(在圖2示為〝man〞)到真空排放口30的流體流動路線定位。一壓力感測器114(通常是一變換器)有作用地連接到每一測量室bi 以供測量bi 內之壓力。
如稍早所述，所有區域Zi 被一單一加壓流體源40進給且排放到一單一真空排放口30內。在一實施例中，該流量限制歧管可為一文氏歧管(venturi manifold)，然亦可使用其他類型的流量限制器。遠端區域Zi (示於圖2之方塊10內)可具有剛性或撓性壁，且可為耦合或不耦合的。具備撓性壁之遠端區域可具有能夠膨脹和收縮的容積。具備撓性壁之區域的容積可彼此交互作用，譬如相互推擠。
各區域Zi 間之耦合可以多種方式發生。一具有可撓曲之壁(且因此可膨脹和收縮)之區域處的容積耦合可能是因為容積膨脹/收縮及容積對容積交互作用而發生。交互作用舉例來說可因一區域膨脹並推擠另一區域從而加大該第二區域內之壓力而發生。
排放口處之排出耦合在真空壓力水準漂移時可能發生，導致排出流量改變，且在極端情況中造成在被阻塞與未被阻塞之間變遷的流動。這在一文氏泵有高流量排入文氏管線內的情況中可能特別具關鍵意義。在此情況中，區域壁可為剛性或撓性。
若一區域中之設定值被設定成夠高致使一顯著沖流流入其歧管內造成管線壓力之一下降(亦即瞬變行為)，則可能發生進入耦合。此管線壓力降可能影響到接受該源進給之所有其他區域。區域壁同樣可為剛性或撓性。
一僅具備一個區域以及剛性壁的系統可被視為一〝不耦合單區域系統〞。由獨立入口進給且排入獨立排放口之此一剛性區域的多重案例可為一〝不耦合單區域系統〞之一實例。一具備可膨脹或收縮之撓性壁的單一區域可被視為是一〝耦合單區域系統〞。圖1和2所示範例實施例可為一〝耦合多區域系統〞，其中耦合程度可以進入、排出和容積耦合為基礎予以量化。
區域壓力評估器120可藉由利用壓力感測器114之壓力量測值、每一圍蔽空間(譬如測量室)和每一區域之物理參數、及一以模型為本的演算法(詳見下文)準確地評估區域Zi 內之壓力來評估區域Zi 每一者內之壓力。其直接成果為一在一閉迴圈中運用區域壓力評估器120來控制區域Zi 內之壓力的壓力控制系統可克服不會發生在區域Zi 自身內的測量室內局域性壓力瞬變。依此方式，該壓力控制系統之閉迴圈控制表現可大幅提昇。
區域壓力評估器120輕易地整合到一先進控制系統中，且可補償呈現進入壓力/流量、排出壓力/流量之靜態及/或動態耦合以及區域容積交互作用的多個區域Zi 。區域壓力評估器120對於遠端區域Zi 之大小或容積並不設限。區域壓力感測器120對於不同範圍的壓力設定值有效，且在被併入一先進控制系統中時會確保一致瞬變和穩態行為。
控制演算法
控制器130經建構接收i個區域每一者之壓力設定值，從區域壓力評估器120接收i個區域每一者之區域壓力估計值，並且藉由控制流入和流出被連接到區域i之測量室之流體流量而操作進入和排出比例閥的方式依據壓力設定值調整每一區域中之壓力。
如稍早所述，控制器130可向圍蔽空間bi 之進入比例閥發送一輸入流量命令訊號及向圍蔽空間bi 之排出比例閥發送一輸出流量命令訊號以便分別依據該輸入流量命令訊號和輸出流量命令訊號控制流入圍蔽空間bi 之輸入流率及流出圍蔽空間bi 之輸出流率。
如稍早所述，就圍蔽空間bi 之一或多者來說，控制器可進行輸入流率和輸出流率之PI控制，但亦可採用其他類型的比例閥控制。在實施PI控制時，從控制器到一圍蔽空間i之進入比例閥的輸入流量命令訊號可由下式給出：Q in , i ＝k Pin (P t －P z , i )＋k Iin ∫(P t －P z , i )dt 且從控制器到圍蔽空間bi 之進入比例閥的輸入流量命令訊號可由下式給出：Q ont , i ＝k Pout (P t －P z , i )＋k Iout ∫(P t －P z , i )dt 在此二式中，Q in , i 代表流入圍蔽空間i之輸入流率，Q out , i 代表流出圍蔽空間bi 之輸出流率，k Pin 代表該輸入流率之一比例增益，k Iin 代表輸入流率之一積分增益，k Pont 代表輸出流率之一比例增益，k Iout 代表輸出流率之一積分增益，P z , i 代表區域Zi 內之估計壓力，P t 代表從一壓力設定值到另一壓力設定值之一期望壓力軌線，且P t －P z , i 代表一循跡誤差。壓力軌線P t 可利用多樣技術構成，其中非侷限性包含多項式，及一階或更高階微分方程式的解。
儘管在本發明之特定實施例中例示說明一種PI型控制系統和方法，應理解到熟習此技藝者會想出多樣變化和修改；舉例來說，可為以模型為本之前饋項的包含。據此，希望隨附申請專利範圍項涵蓋落入本發明之真實精神和範圍內的所有此等變化和修改。
以下提出一種用來操作區域壓力評估器120以評估每一區域中之壓力的以模型為本估算方法。此種以模型為本估算方法可為以測量室之動態狀況以及遠端區域Zi 之動態狀況和容積耦合為基礎，詳見下文。
測量室動態狀況
每一測量室bi 內之有效壓力被定義為：
其中P b , i 是測量室內之壓力變換器114對於第i個區域測得的壓力，P STP 是標準溫度壓力(STP)條件下的壓力，Q in , i 代表輸入流量且Q o , i 和Q z , i 代表輸出流量。特定言之，Q o , i 是從第i個測量室bi 到文氏歧管的流量，且Q z , i 是到第i個區域的流量。在式(1)中，V b , i 代表用於第i個區域之測量室bi 的容積。
往流量限制器或文氏歧管〝man〞的輸出流量可被表示為：
其中d orifice , l 代表測量室中向文氏歧管進給之固定噴口之直徑，且P man 代表連接到真空排放口30之文氏歧管中的壓力。通過噴口之流體流可視橫跨該固定噴口之壓力差而被阻塞或未被阻塞。
區域動態狀況和容積耦合
流往每一區域Zi 之流量可用以下動態方程式(導自Navier－Stokes方程式)敘述：
其中Q z , i 和P z , i 分別代表送往第i個區域之進入流量及該區域中之壓力，且C tube , i 和τ tube , i 是與將測量室bi 連接到區域Zi 之導管Fi 有關的常數。特定言之，C tube , i 代表導管Fi 之一傳導率、SI單位[(m3 /s)/(s－Pa)]，且τ tube , i 代表橫跨該導管之一流量平衡時間常數、亦採SI單位。
每一區域Zi 內之壓力動態狀況可如下所示：
其中每一區域Zi 之容積係由V z , i 表示，且因多個區域Zi 間之耦合而造成的動態容積交互作用可被以數學方式描述如下：
其中V zO , i 是每一區域在標準溫度壓力(STP)條件下的初始容積，τ v 是容積膨脹/收縮時間常數，γ ii 代表膨脹/收縮係數，且γ ij 代表區域i與區域j間之耦合係數。質量/慣性效應可被假設為可忽略的。
區域壓力評估器
如稍早所述，控制器130之控制目標是調整遠端區域Zi 內之壓力。但用於bi 之壓力變換器114係被裝在測量室bi 內而非區域Zi 內。如圖2所示，測量室bi 以導管Fi 相隔於遠端區域Zi 。
用於壓力控制演算法之以觀測者為本的模型可由多種方式產生。舉例來說，可利用一流量感測器(譬如一風速計、感熱型感測器、感壓型感測器、及類似物)判定上列方程式中之流量Q z , i 。另一方案可為將區域流量方程式依其離散型改寫而產生一中間流量觀測者：
其中代表第i個區域之流量評估的第n個樣本，且P b 是流線壓力變換器114測得的壓力。
然後可得到方程式(5)之一離散解：
其中代表第i個區域之容積評估的第n個樣本。基於上列方程式，壓力評估器120之演算法係建構如下：
其中代表第i個區域之壓力評估的第n個樣本，係從式(6)中定義之流量評估獲得或者在可得到直接流量量測值Q z 時由此直接量測值替換，且係從式(7)獲得。
總括而言，以上提出一種藉由準確評估壓力受控之遠端區域之壓力而控制該等遠端區域中之壓力的系統及方法。上述壓力控制系統及方法可被用在多樣應用，其中非侷限性包含一CMP機。
儘管已敘述用以控制遠端區域中之壓力的系統和方法的特定實施例，應理解到這些實施例所隱含的概念亦可被用在其他實施例。本申請案的保護範圍僅由申請專利範圍項設限。
在這些申請專利範圍項中，元件之單數形表述除非有明確指定否則不應視為〝一且唯一〞而應視為〝一或多個〞。全說明書中各實施例之元件之熟習此技藝者已知或稍後會知曉的所有結構和功能等效物以引用的方式併入本文中，且希望為申請專利範圍項所涵蓋。此外，本說明書所述內容不管是否明列於申請專利範圍項中均不希望將其獻諸公用。所有申請專利範圍項要件除非是以〝用於...的構件(means for)〞片語或是在方法申請專利範圍項中以〝用以...的步驟(step for)〞片語明確敘述否則不應依35 U.S.C.§112第六段的規定解釋。
10．．．遠端區域方塊
30．．．真空排放口
40．．．加壓流體源
100．．．壓力控制系統
110．．．壓力測量和流體控制系統
112．．．進入閥
114．．．壓力感測器
116．．．排出閥
120．．．區域壓力評估器
130．．．控制器
圖1是一依據本發明一實施例的總體功能方塊圖，其示出一調整一或多個遠端區域內之壓力的壓力控制系統。
圖2更詳細地示出可分別透過i個導管連接到i個圍蔽空間的i個區域(i＝1,...,N)以及用在本發明所述壓力控制系統一實施例中之一壓力測量和流體控制系統。
10．．．遠端區域方塊
30．．．真空排放口
40．．．加壓流體源
100．．．壓力控制系統
110．．．壓力測量和流體控制系統
120．．．區域壓力評估器
130．．．控制器

Claims (9)

  1. 一種用於遙控i個區域每一者內之壓力的系統，該等區域分別可透過導管i連接到i個測量室，該系統藉由控制一流體流入和流出每一測量室i之流量及透過每一導管i流入每一區域i內之流量的方式進行遙控，其中i=1,...,N，該系統包括：多個測量室，i，其中每個測量室藉由操作連接至該測量室的一進入比例閥及排出比例閥而可控制地關閉，其中每個排出比例閥係連接至一真空排放口，且其中該多個測量室，i，藉由一流量限制歧管在相應的排出比例閥連接至另一測量室；多個區域i，其中每個區域透過一相應的導管連接至一相應的測量室，其中每個區域係一相對於該相應測量室的遙控區域；一壓力測量系統，其經建構測量該等i個測量室內之流體壓力；一閥系統，其針對每一測量室i包含至少一經建構調整該流體流入該測量室i內之一輸入流率的進入比例閥，及至少一經建構調整該流體流出該測量室i外之一輸出流率的排出比例閥；一區域壓力評估器，其耦接於該壓力測量系統且經建構針對每一區域i從該壓力測量系統接收該測量室i內之一實測壓力，且以該測量室i內之實測壓力之一函數及該導管i和該區域i之已知特性之一函數估算 該區域i內之一估計壓力；及一控制器，其經建構藉由操作每一測量室i之進入比例閥和排出比例閥以便將該流體流入該測量室i內之輸入流率和該流體流出該測量室i外之輸出流率控制成該區域i之一壓力設定值及得自該區域壓力評估器之該區域i內估計壓力的一函數的方式控制每一區域i內之壓力；其中針對該多個測量室i，該控制器更經建構實行該每一測量室之輸入流率和輸出流率之PI控制；其中從該控制器到測量室i之進入比例閥的一輸入流量命令訊號由下式給出：Q in ,i =k Pin (P t -P z ,i )+k Iin ʃ(P t -P z ,i )dt ，其中從該控制器到測量室i之排出比例閥的一輸出流量命令訊號由下式給出：Q out ,i =k Pout (P t -P z ,i )+k Iout ʃ(P t -P z ,i )dt ；且其中：Q in ,i 代表流入測量室i之輸入流率，Q out ,i 代表流出測量室i之輸出流率，k Pin 代表該輸入流率之一比例增益，k Iin 代表該輸入流率之一積分增益，k pout 代表該輸出流率之一比例增益，k Iout 代表該輸出流率之一積分增益，P z ,i 代表區域i內之估計壓力，P t 代表從一壓力設定值到另一壓力設定值之一期望 壓力軌線，且P t -P z ,i 代表一循跡誤差。
  2. 如申請專利範圍第1項之系統，其中該壓力測量系統包括複數個壓力感測器，該等壓力感測器每一者分別經連接用以測量該等i個測量室內之壓力。
  3. 如申請專利範圍第1項之系統，其更包括一連接到該等i個測量室之進入比例閥的加壓流體源。
  4. 如申請專利範圍第3項之系統，其更在該加壓流體源與該等進入比例閥之間包括一壓力歧管。
  5. 如申請專利範圍第1項之系統，其中該流量限制歧管包括一文氏歧管。
  6. 如申請專利範圍第1項之系統，其中該等i個區域之至少一些區域具有剛性壁。
  7. 如申請專利範圍第1項之系統，其中該等i個區域之至少一些區域不耦合。
  8. 一種化學機械研磨機系統，包含：多個用以接收一加壓流體的測量室i，其中每個測量室藉由操作連接至該測量室的一進入比例閥及排出比例閥而可控制地關閉，其中每個排出比例閥連接至一真空排放口，且其中該多個測量室i藉由一流量限制歧管在相應排出比例閥連接至另一測量室；多個區域，遠離且連接到該多個測量室，該區域用以接收自該多個測量室來的加壓流體，其中每個區域 藉由一相應導管連接至該相應測量室；一閥系統，其經建構以調整該加壓流體流入和流出該每個測量室及透過該相應導管流入該相應區域內的流量；一區域壓力評估器，其經建構以該相應測量室內的一壓力的函數以及以該相應導管之已知特性之一函數而判定該每一區域內的一估計壓力；以及一控制器，其經建構藉由操作該該閥系統以便將該多個區域的輸入和輸出流率控制成得自該區域壓力評估器之該估計壓力及該多個區域之一壓力設定值的一函數的方式調整該多個區域內之壓力；其中針對該多個測量室i，該控制器更經建構實行該每一測量室之輸入流率和輸出流率之PI控制；其中從該控制器到測量室i之進入比例閥的一輸入流量命令訊號由下式給出：Q in ,i =k Pin (P t -P z ,i )+k Iin ʃ(P t -P z ,i )dt ，其中從該控制器到測量室i之排出比例閥的一輸出流量命令訊號由下式給出：Q out ,i =k Pout (P t -P z ,i )+k Iout ʃ(P t -P z ,i )dt ；且其中：Q in ,i 代表流入測量室i之輸入流率，Q out ,i 代表流出測量室i之輸出流率，k Pin 代表該輸入流率之一比例增益，k Iin 代表該輸入流率之一積分增益，k Pout 代表該輸出流率之一比例增益，k Iout 代表該輸出流率之一積分增益，P z ,i 代表區域i內之估計壓力，P t 代表從一壓力設定值到另一壓力設定值之一期望壓力軌線，且P t -P z ,i 代表一循跡誤差。
  9. 如申請專利範圍第8項之化學機械研磨機系統，更包含多個壓力感測器，其經建構以測量該多個測量室內的壓力，其中該區域壓力評估器係經建構以藉由該相應壓力感測器測量的一壓力之函數而判定每一個該多個區域內之一估計壓力。
TW96101519A 2006-01-17 2007-01-16 用以在一區域內遠端控制壓力的系統及一化學機械研磨機系統 TWI406119B (zh)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US11/333,142 US8037896B2 (en) 2004-03-09 2006-01-17 Pressure regulation in remote zones

Publications (2)

Publication Number Publication Date
TW200745804A TW200745804A (en) 2007-12-16
TWI406119B true TWI406119B (zh) 2013-08-21

Family

ID=37865673

Family Applications (1)

Application Number Title Priority Date Filing Date
TW96101519A TWI406119B (zh) 2006-01-17 2007-01-16 用以在一區域內遠端控制壓力的系統及一化學機械研磨機系統

Country Status (8)

Country Link
US (2) US8037896B2 (zh)
JP (2) JP2009524147A (zh)
KR (1) KR101259779B1 (zh)
CN (1) CN101356481A (zh)
DE (1) DE112006003678B4 (zh)
GB (1) GB2446358B (zh)
TW (1) TWI406119B (zh)
WO (1) WO2007123576A1 (zh)

Families Citing this family (120)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5082989B2 (ja) * 2008-03-31 2012-11-28 日立金属株式会社 流量制御装置、その検定方法及び流量制御方法
US8302420B2 (en) * 2009-04-27 2012-11-06 Hermes Microvision, Inc. Method for venting gas into closed space and gas supply assembly thereof
US8783027B2 (en) * 2009-09-18 2014-07-22 Siemens Energy, Inc. Pressure regulation circuit for turbine generators
GB2474892B (en) * 2009-10-30 2011-09-21 Siemens Vai Metals Tech Ltd Flow control valve
US9127361B2 (en) * 2009-12-07 2015-09-08 Mks Instruments, Inc. Methods of and apparatus for controlling pressure in multiple zones of a process tool
US8347920B2 (en) * 2010-01-29 2013-01-08 Flexibility Engineering, Llc Pressurized fluid positioner control system
JP5496771B2 (ja) * 2010-05-13 2014-05-21 株式会社Ｋｅｌｋ 温度制御装置を用いた温度制御方法
US9324576B2 (en) 2010-05-27 2016-04-26 Applied Materials, Inc. Selective etch for silicon films
US10283321B2 (en) 2011-01-18 2019-05-07 Applied Materials, Inc. Semiconductor processing system and methods using capacitively coupled plasma
US9064815B2 (en) 2011-03-14 2015-06-23 Applied Materials, Inc. Methods for etch of metal and metal-oxide films
US8999856B2 (en) 2011-03-14 2015-04-07 Applied Materials, Inc. Methods for etch of sin films
US9267739B2 (en) 2012-07-18 2016-02-23 Applied Materials, Inc. Pedestal with multi-zone temperature control and multiple purge capabilities
US9373517B2 (en) 2012-08-02 2016-06-21 Applied Materials, Inc. Semiconductor processing with DC assisted RF power for improved control
US9023734B2 (en) 2012-09-18 2015-05-05 Applied Materials, Inc. Radical-component oxide etch
US9132436B2 (en) 2012-09-21 2015-09-15 Applied Materials, Inc. Chemical control features in wafer process equipment
US8921234B2 (en) 2012-12-21 2014-12-30 Applied Materials, Inc. Selective titanium nitride etching
US10256079B2 (en) 2013-02-08 2019-04-09 Applied Materials, Inc. Semiconductor processing systems having multiple plasma configurations
US9362130B2 (en) 2013-03-01 2016-06-07 Applied Materials, Inc. Enhanced etching processes using remote plasma sources
US9040422B2 (en) 2013-03-05 2015-05-26 Applied Materials, Inc. Selective titanium nitride removal
US20140271097A1 (en) 2013-03-15 2014-09-18 Applied Materials, Inc. Processing systems and methods for halide scavenging
US20140311581A1 (en) * 2013-04-19 2014-10-23 Applied Materials, Inc. Pressure controller configuration for semiconductor processing applications
US9493879B2 (en) 2013-07-12 2016-11-15 Applied Materials, Inc. Selective sputtering for pattern transfer
US9773648B2 (en) 2013-08-30 2017-09-26 Applied Materials, Inc. Dual discharge modes operation for remote plasma
US9576809B2 (en) 2013-11-04 2017-02-21 Applied Materials, Inc. Etch suppression with germanium
US9520303B2 (en) 2013-11-12 2016-12-13 Applied Materials, Inc. Aluminum selective etch
US9245762B2 (en) 2013-12-02 2016-01-26 Applied Materials, Inc. Procedure for etch rate consistency
US9499898B2 (en) 2014-03-03 2016-11-22 Applied Materials, Inc. Layered thin film heater and method of fabrication
US9299537B2 (en) 2014-03-20 2016-03-29 Applied Materials, Inc. Radial waveguide systems and methods for post-match control of microwaves
US9903020B2 (en) 2014-03-31 2018-02-27 Applied Materials, Inc. Generation of compact alumina passivation layers on aluminum plasma equipment components
US9309598B2 (en) 2014-05-28 2016-04-12 Applied Materials, Inc. Oxide and metal removal
US9425058B2 (en) 2014-07-24 2016-08-23 Applied Materials, Inc. Simplified litho-etch-litho-etch process
US9496167B2 (en) 2014-07-31 2016-11-15 Applied Materials, Inc. Integrated bit-line airgap formation and gate stack post clean
US9659753B2 (en) 2014-08-07 2017-05-23 Applied Materials, Inc. Grooved insulator to reduce leakage current
US9553102B2 (en) 2014-08-19 2017-01-24 Applied Materials, Inc. Tungsten separation
US9355862B2 (en) 2014-09-24 2016-05-31 Applied Materials, Inc. Fluorine-based hardmask removal
US9613822B2 (en) 2014-09-25 2017-04-04 Applied Materials, Inc. Oxide etch selectivity enhancement
US9966240B2 (en) 2014-10-14 2018-05-08 Applied Materials, Inc. Systems and methods for internal surface conditioning assessment in plasma processing equipment
US9355922B2 (en) 2014-10-14 2016-05-31 Applied Materials, Inc. Systems and methods for internal surface conditioning in plasma processing equipment
US11637002B2 (en) 2014-11-26 2023-04-25 Applied Materials, Inc. Methods and systems to enhance process uniformity
US10573496B2 (en) 2014-12-09 2020-02-25 Applied Materials, Inc. Direct outlet toroidal plasma source
US10224210B2 (en) 2014-12-09 2019-03-05 Applied Materials, Inc. Plasma processing system with direct outlet toroidal plasma source
US9502258B2 (en) 2014-12-23 2016-11-22 Applied Materials, Inc. Anisotropic gap etch
US11257693B2 (en) 2015-01-09 2022-02-22 Applied Materials, Inc. Methods and systems to improve pedestal temperature control
US9449846B2 (en) 2015-01-28 2016-09-20 Applied Materials, Inc. Vertical gate separation
US9728437B2 (en) 2015-02-03 2017-08-08 Applied Materials, Inc. High temperature chuck for plasma processing systems
US20160225652A1 (en) 2015-02-03 2016-08-04 Applied Materials, Inc. Low temperature chuck for plasma processing systems
US9881805B2 (en) 2015-03-02 2018-01-30 Applied Materials, Inc. Silicon selective removal
US9741593B2 (en) 2015-08-06 2017-08-22 Applied Materials, Inc. Thermal management systems and methods for wafer processing systems
US9691645B2 (en) 2015-08-06 2017-06-27 Applied Materials, Inc. Bolted wafer chuck thermal management systems and methods for wafer processing systems
US9349605B1 (en) 2015-08-07 2016-05-24 Applied Materials, Inc. Oxide etch selectivity systems and methods
US10504700B2 (en) 2015-08-27 2019-12-10 Applied Materials, Inc. Plasma etching systems and methods with secondary plasma injection
US10522371B2 (en) 2016-05-19 2019-12-31 Applied Materials, Inc. Systems and methods for improved semiconductor etching and component protection
US10504754B2 (en) 2016-05-19 2019-12-10 Applied Materials, Inc. Systems and methods for improved semiconductor etching and component protection
US9865484B1 (en) 2016-06-29 2018-01-09 Applied Materials, Inc. Selective etch using material modification and RF pulsing
US10629473B2 (en) 2016-09-09 2020-04-21 Applied Materials, Inc. Footing removal for nitride spacer
US10062575B2 (en) 2016-09-09 2018-08-28 Applied Materials, Inc. Poly directional etch by oxidation
US9934942B1 (en) 2016-10-04 2018-04-03 Applied Materials, Inc. Chamber with flow-through source
US10546729B2 (en) 2016-10-04 2020-01-28 Applied Materials, Inc. Dual-channel showerhead with improved profile
US10062585B2 (en) 2016-10-04 2018-08-28 Applied Materials, Inc. Oxygen compatible plasma source
US9721789B1 (en) 2016-10-04 2017-08-01 Applied Materials, Inc. Saving ion-damaged spacers
US10062579B2 (en) 2016-10-07 2018-08-28 Applied Materials, Inc. Selective SiN lateral recess
US9947549B1 (en) 2016-10-10 2018-04-17 Applied Materials, Inc. Cobalt-containing material removal
US10163696B2 (en) 2016-11-11 2018-12-25 Applied Materials, Inc. Selective cobalt removal for bottom up gapfill
US9768034B1 (en) 2016-11-11 2017-09-19 Applied Materials, Inc. Removal methods for high aspect ratio structures
US10242908B2 (en) 2016-11-14 2019-03-26 Applied Materials, Inc. Airgap formation with damage-free copper
US10026621B2 (en) 2016-11-14 2018-07-17 Applied Materials, Inc. SiN spacer profile patterning
US10566206B2 (en) 2016-12-27 2020-02-18 Applied Materials, Inc. Systems and methods for anisotropic material breakthrough
US10431429B2 (en) 2017-02-03 2019-10-01 Applied Materials, Inc. Systems and methods for radial and azimuthal control of plasma uniformity
US10403507B2 (en) 2017-02-03 2019-09-03 Applied Materials, Inc. Shaped etch profile with oxidation
US10043684B1 (en) 2017-02-06 2018-08-07 Applied Materials, Inc. Self-limiting atomic thermal etching systems and methods
US10319739B2 (en) 2017-02-08 2019-06-11 Applied Materials, Inc. Accommodating imperfectly aligned memory holes
US10943834B2 (en) 2017-03-13 2021-03-09 Applied Materials, Inc. Replacement contact process
US10794613B2 (en) 2017-03-13 2020-10-06 Kevin Michael Murphy, Llc Overflow protection and monitoring apparatus and methods of installing same
US10319649B2 (en) 2017-04-11 2019-06-11 Applied Materials, Inc. Optical emission spectroscopy (OES) for remote plasma monitoring
US11276559B2 (en) 2017-05-17 2022-03-15 Applied Materials, Inc. Semiconductor processing chamber for multiple precursor flow
US11276590B2 (en) 2017-05-17 2022-03-15 Applied Materials, Inc. Multi-zone semiconductor substrate supports
US10049891B1 (en) 2017-05-31 2018-08-14 Applied Materials, Inc. Selective in situ cobalt residue removal
US10497579B2 (en) 2017-05-31 2019-12-03 Applied Materials, Inc. Water-free etching methods
US10920320B2 (en) 2017-06-16 2021-02-16 Applied Materials, Inc. Plasma health determination in semiconductor substrate processing reactors
US10541246B2 (en) 2017-06-26 2020-01-21 Applied Materials, Inc. 3D flash memory cells which discourage cross-cell electrical tunneling
US10727080B2 (en) 2017-07-07 2020-07-28 Applied Materials, Inc. Tantalum-containing material removal
US10541184B2 (en) 2017-07-11 2020-01-21 Applied Materials, Inc. Optical emission spectroscopic techniques for monitoring etching
US10354889B2 (en) 2017-07-17 2019-07-16 Applied Materials, Inc. Non-halogen etching of silicon-containing materials
US10043674B1 (en) 2017-08-04 2018-08-07 Applied Materials, Inc. Germanium etching systems and methods
US10170336B1 (en) 2017-08-04 2019-01-01 Applied Materials, Inc. Methods for anisotropic control of selective silicon removal
US10297458B2 (en) 2017-08-07 2019-05-21 Applied Materials, Inc. Process window widening using coated parts in plasma etch processes
US10128086B1 (en) 2017-10-24 2018-11-13 Applied Materials, Inc. Silicon pretreatment for nitride removal
US10283324B1 (en) 2017-10-24 2019-05-07 Applied Materials, Inc. Oxygen treatment for nitride etching
US10256112B1 (en) 2017-12-08 2019-04-09 Applied Materials, Inc. Selective tungsten removal
US10903054B2 (en) 2017-12-19 2021-01-26 Applied Materials, Inc. Multi-zone gas distribution systems and methods
US11328909B2 (en) 2017-12-22 2022-05-10 Applied Materials, Inc. Chamber conditioning and removal processes
US10854426B2 (en) 2018-01-08 2020-12-01 Applied Materials, Inc. Metal recess for semiconductor structures
US10679870B2 (en) 2018-02-15 2020-06-09 Applied Materials, Inc. Semiconductor processing chamber multistage mixing apparatus
US10964512B2 (en) 2018-02-15 2021-03-30 Applied Materials, Inc. Semiconductor processing chamber multistage mixing apparatus and methods
TWI716818B (zh) 2018-02-28 2021-01-21 美商應用材料股份有限公司 形成氣隙的系統及方法
US10593560B2 (en) 2018-03-01 2020-03-17 Applied Materials, Inc. Magnetic induction plasma source for semiconductor processes and equipment
US10319600B1 (en) 2018-03-12 2019-06-11 Applied Materials, Inc. Thermal silicon etch
US10497573B2 (en) 2018-03-13 2019-12-03 Applied Materials, Inc. Selective atomic layer etching of semiconductor materials
US10573527B2 (en) 2018-04-06 2020-02-25 Applied Materials, Inc. Gas-phase selective etching systems and methods
US10490406B2 (en) 2018-04-10 2019-11-26 Appled Materials, Inc. Systems and methods for material breakthrough
US10699879B2 (en) 2018-04-17 2020-06-30 Applied Materials, Inc. Two piece electrode assembly with gap for plasma control
US10886137B2 (en) 2018-04-30 2021-01-05 Applied Materials, Inc. Selective nitride removal
JP7068062B2 (ja) * 2018-06-18 2022-05-16 株式会社堀場製作所 流体制御装置、及び、流量比率制御装置
US10872778B2 (en) 2018-07-06 2020-12-22 Applied Materials, Inc. Systems and methods utilizing solid-phase etchants
US10755941B2 (en) 2018-07-06 2020-08-25 Applied Materials, Inc. Self-limiting selective etching systems and methods
US10672642B2 (en) 2018-07-24 2020-06-02 Applied Materials, Inc. Systems and methods for pedestal configuration
US11049755B2 (en) 2018-09-14 2021-06-29 Applied Materials, Inc. Semiconductor substrate supports with embedded RF shield
US10892198B2 (en) 2018-09-14 2021-01-12 Applied Materials, Inc. Systems and methods for improved performance in semiconductor processing
US11062887B2 (en) 2018-09-17 2021-07-13 Applied Materials, Inc. High temperature RF heater pedestals
US11417534B2 (en) 2018-09-21 2022-08-16 Applied Materials, Inc. Selective material removal
US11682560B2 (en) 2018-10-11 2023-06-20 Applied Materials, Inc. Systems and methods for hafnium-containing film removal
US11121002B2 (en) 2018-10-24 2021-09-14 Applied Materials, Inc. Systems and methods for etching metals and metal derivatives
US11437242B2 (en) 2018-11-27 2022-09-06 Applied Materials, Inc. Selective removal of silicon-containing materials
US11721527B2 (en) 2019-01-07 2023-08-08 Applied Materials, Inc. Processing chamber mixing systems
US10920319B2 (en) 2019-01-11 2021-02-16 Applied Materials, Inc. Ceramic showerheads with conductive electrodes
DE102019106682B4 (de) * 2019-03-15 2022-07-07 Bürkert Werke GmbH & Co. KG Druckregler
US11320843B2 (en) * 2019-10-17 2022-05-03 Dongguan Hesheng Machinery & Electric Co., Ltd. Air compression system with pressure detection
CN111623158B (zh) * 2020-06-07 2021-12-21 上海阀特流体控制阀门有限公司 一种阀门控制系统
JP7535469B2 (ja) 2020-11-24 2024-08-16 株式会社堀場エステック 流量制御装置、流量制御方法、及び、流量制御装置用プログラム
TWI785608B (zh) * 2021-05-12 2022-12-01 復盛股份有限公司 流體機械及其控制方法

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20050199287A1 (en) * 2004-03-09 2005-09-15 Ali Shajii System and method for controlling pressure in remote zones

Family Cites Families (28)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4456038A (en) * 1981-03-25 1984-06-26 Hennessy Industries, Inc. Apparatus for pressurizing tires to a desired level
JPS61170633A (ja) 1985-01-24 1986-08-01 Mitsui Eng & Shipbuild Co Ltd キヤビテ−シヨン水槽用圧力制御装置
US4961441A (en) * 1989-11-13 1990-10-09 Salter Stuart C Method and system for controlling a pressure regulator
US5325884A (en) * 1991-07-10 1994-07-05 Conservair Technologies Compressed air control system
EP0692265B1 (en) * 1991-08-21 2000-05-24 Smith & Nephew, Inc. Fluid management system
US5443087A (en) * 1993-12-13 1995-08-22 Melea Limited Method and system for controlling a pressurized fluid and valve assembly for use therein
US5551770A (en) 1994-10-27 1996-09-03 Ford Motor Company Method for estimating pressure in a pressure actuated controller
US5762539A (en) 1996-02-27 1998-06-09 Ebara Corporation Apparatus for and method for polishing workpiece
DE19651761A1 (de) 1996-12-12 1998-06-18 Wacker Siltronic Halbleitermat Verfahren und Vorrichtung zum Polieren von Halbleiterscheiben
US5957751A (en) 1997-05-23 1999-09-28 Applied Materials, Inc. Carrier head with a substrate detection mechanism for a chemical mechanical polishing system
US5964653A (en) 1997-07-11 1999-10-12 Applied Materials, Inc. Carrier head with a flexible membrane for a chemical mechanical polishing system
US5916016A (en) 1997-10-23 1999-06-29 Vlsi Technology, Inc. Methods and apparatus for polishing wafers
US6080050A (en) 1997-12-31 2000-06-27 Applied Materials, Inc. Carrier head including a flexible membrane and a compliant backing member for a chemical mechanical polishing apparatus
WO2000045993A1 (fr) 1999-02-02 2000-08-10 Ebara Corporation Dispositif de maintien et de polissage de plaquette
US6368189B1 (en) 1999-03-03 2002-04-09 Mitsubishi Materials Corporation Apparatus and method for chemical-mechanical polishing (CMP) head having direct pneumatic wafer polishing pressure
DE19956553B4 (de) 1999-11-24 2010-11-25 Robert Bosch Gmbh Verfahren zum Abschätzen des Druckes in einem Radbremszylinder und Steuereinheit zur Durchführung des Verfahrens
CA2298324A1 (en) * 2000-02-09 2001-08-09 Michael T. Sulatisky High volume electronic gas regulator
US6506105B1 (en) 2000-05-12 2003-01-14 Multi-Planar Technologies, Inc. System and method for pneumatic diaphragm CMP head having separate retaining ring and multi-region wafer pressure control
US6439956B1 (en) * 2000-11-13 2002-08-27 Interact Accessories, Inc. RC car device
EP1355689B1 (en) 2000-12-29 2010-05-26 Resmed Ltd. Characterisation of mask systems
US6568416B2 (en) * 2001-02-28 2003-05-27 Brian L. Andersen Fluid flow control system, fluid delivery and control system for a fluid delivery line, and method for controlling pressure oscillations within fluid of a fluid delivery line
US6837774B2 (en) * 2001-03-28 2005-01-04 Taiwan Semiconductor Manufacturing Co., Ltd Linear chemical mechanical polishing apparatus equipped with programmable pneumatic support platen and method of using
US6766260B2 (en) 2002-01-04 2004-07-20 Mks Instruments, Inc. Mass flow ratio system and method
US6722946B2 (en) * 2002-01-17 2004-04-20 Nutool, Inc. Advanced chemical mechanical polishing system with smart endpoint detection
AU2003254011A1 (en) 2002-07-19 2004-02-09 Mykrolis Corporation Fluid flow measuring and proportional fluid flow control device
AU2003268000A1 (en) * 2002-07-19 2004-02-09 Mykrolis Corporation Liquid flow controller and precision dispense apparatus and system
JP2004090744A (ja) 2002-08-30 2004-03-25 Hitachi Unisia Automotive Ltd ブレーキ圧力推定装置
US7740024B2 (en) * 2004-02-12 2010-06-22 Entegris, Inc. System and method for flow monitoring and control

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20050199287A1 (en) * 2004-03-09 2005-09-15 Ali Shajii System and method for controlling pressure in remote zones

Also Published As

Publication number Publication date
US8689822B2 (en) 2014-04-08
JP2009524147A (ja) 2009-06-25
US8037896B2 (en) 2011-10-18
TW200745804A (en) 2007-12-16
GB0811130D0 (en) 2008-07-23
WO2007123576A1 (en) 2007-11-01
DE112006003678B4 (de) 2017-05-11
JP2013065345A (ja) 2013-04-11
US20120202408A1 (en) 2012-08-09
DE112006003678T5 (de) 2008-12-11
KR20080083713A (ko) 2008-09-18
GB2446358B (en) 2011-05-04
GB2446358A (en) 2008-08-06
CN101356481A (zh) 2009-01-28
US20060169327A1 (en) 2006-08-03
KR101259779B1 (ko) 2013-05-03

Similar Documents

Publication Publication Date Title
TWI406119B (zh) 用以在一區域內遠端控制壓力的系統及一化學機械研磨機系統
KR101662046B1 (ko) 압력 기초 질량 유량 제어기의 자기 증명을 위한 방법 및 장치
JP5186530B2 (ja) フローモニタリングおよび制御のためのシステムおよび方法
US11353352B2 (en) Apparatus and methods for self-correcting pressure based mass flow controller
US9715237B2 (en) Flow-control valve system and method
EP3278032B1 (en) Method and system for determining characteristic parameters of a hydraulic network
JP4585035B2 (ja) 流量比率制御装置
TWI831777B (zh) 用於多通道質量流量和比例控制系統的方法和設備
TWI642910B (zh) 流量控制機器、流量控制機器的流量校正方法、流量測定機器及使用流量測定機器的流量測定方法
US8265795B2 (en) Mass flow controller
KR20160043060A (ko) 유량계 및 그것을 구비한 유량 제어 장치
KR20090075816A (ko) 차압식 매스 플로우 컨트롤러에 있어서 진단 기구
JP7216736B2 (ja) 絶対圧及び差圧トランスデューサーを有する質量流量コントローラー
US20240160230A1 (en) Flow rate control device
JP6929566B2 (ja) 流量測定方法および流量測定装置
KR101842160B1 (ko) 유량제어장치 및 방법
KR20160054292A (ko) 유량제어시스템

Legal Events

Date Code Title Description
MM4A Annulment or lapse of patent due to non-payment of fees