TWI405258B - Plasma processing device - Google Patents

Plasma processing device Download PDF

Info

Publication number
TWI405258B
TWI405258B TW096108049A TW96108049A TWI405258B TW I405258 B TWI405258 B TW I405258B TW 096108049 A TW096108049 A TW 096108049A TW 96108049 A TW96108049 A TW 96108049A TW I405258 B TWI405258 B TW I405258B
Authority
TW
Taiwan
Prior art keywords
plasma
processing container
wall
impedance
temperature
Prior art date
Application number
TW096108049A
Other languages
English (en)
Chinese (zh)
Other versions
TW200809956A (en
Inventor
Kazuo Sasaki
Masato Minami
Toshihiro Tojo
Original Assignee
Tokyo Electron Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Electron Ltd filed Critical Tokyo Electron Ltd
Publication of TW200809956A publication Critical patent/TW200809956A/zh
Application granted granted Critical
Publication of TWI405258B publication Critical patent/TWI405258B/zh

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/32091—Radio frequency generated discharge the radio frequency energy being capacitively coupled to the plasma
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/321—Radio frequency generated discharge the radio frequency energy being inductively coupled to the plasma
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/32174—Circuits specially adapted for controlling the RF discharge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/32174—Circuits specially adapted for controlling the RF discharge
    • H01J37/32183—Matching circuits
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32458—Vessel
    • H01J37/32513—Sealing means, e.g. sealing between different parts of the vessel
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32458—Vessel
    • H01J37/32522—Temperature
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
    • H05H1/00—Generating plasma; Handling plasma
    • H05H1/24—Generating plasma
    • H05H1/46—Generating plasma using applied electromagnetic fields, e.g. high frequency or microwave energy
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
    • H05H1/00—Generating plasma; Handling plasma
    • H05H1/24—Generating plasma
    • H05H1/46—Generating plasma using applied electromagnetic fields, e.g. high frequency or microwave energy
    • H05H1/4645—Radiofrequency discharges
    • H05H1/4652—Radiofrequency discharges using inductive coupling means, e.g. coils

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Electromagnetism (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Plasma Technology (AREA)
  • Drying Of Semiconductors (AREA)
TW096108049A 2006-03-09 2007-03-08 Plasma processing device TWI405258B (zh)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2006064682A JP4876641B2 (ja) 2006-03-09 2006-03-09 プラズマ処理装置

Publications (2)

Publication Number Publication Date
TW200809956A TW200809956A (en) 2008-02-16
TWI405258B true TWI405258B (zh) 2013-08-11

Family

ID=38587797

Family Applications (1)

Application Number Title Priority Date Filing Date
TW096108049A TWI405258B (zh) 2006-03-09 2007-03-08 Plasma processing device

Country Status (4)

Country Link
JP (1) JP4876641B2 (ko)
KR (2) KR100884413B1 (ko)
CN (1) CN101035405B (ko)
TW (1) TWI405258B (ko)

Families Citing this family (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7758718B1 (en) * 2006-12-29 2010-07-20 Lam Research Corporation Reduced electric field arrangement for managing plasma confinement
KR101318704B1 (ko) * 2008-01-16 2013-10-18 참엔지니어링(주) 기판 지지장치, 이를 구비하는 플라즈마 처리장치 및플라즈마 처리방법
JP5141519B2 (ja) * 2008-12-02 2013-02-13 東京エレクトロン株式会社 プラズマ処理装置及びプラズマ処理装置の運転方法
JP5396256B2 (ja) * 2009-12-10 2014-01-22 東京エレクトロン株式会社 プラズマ処理装置
CN102157326A (zh) * 2009-12-31 2011-08-17 丽佳达普株式会社 基板处理装置的壁面能量损失减少装置
KR101173293B1 (ko) * 2009-12-31 2012-08-13 엘아이지에이디피 주식회사 기판 처리 장치의 벽면 에너지 손실 저감 장치
JP5484981B2 (ja) * 2010-03-25 2014-05-07 東京エレクトロン株式会社 基板載置台及び基板処理装置
JP2012060104A (ja) 2010-08-11 2012-03-22 Toshiba Corp 電源制御装置、プラズマ処理装置、及びプラズマ処理方法
US10056231B2 (en) 2011-04-28 2018-08-21 Lam Research Corporation TCCT match circuit for plasma etch chambers
US9230779B2 (en) * 2012-03-19 2016-01-05 Lam Research Corporation Methods and apparatus for correcting for non-uniformity in a plasma processing system
CN104685608A (zh) * 2012-09-26 2015-06-03 应用材料公司 具有闭环控制的底部和侧边等离子体调节
JP6289860B2 (ja) * 2012-10-23 2018-03-07 ラム リサーチ コーポレーションＬａｍ Ｒｅｓｅａｒｃｈ Ｃｏｒｐｏｒａｔｉｏｎ プラズマエッチングチャンバ用のｔｃｃｔマッチング回路
US20170239730A1 (en) * 2014-08-13 2017-08-24 National Institute Of Advanced Industrial Science And Technology Processing device for metal materials
CN107305830B (zh) * 2016-04-20 2020-02-11 中微半导体设备(上海)股份有限公司 电容耦合等离子体处理装置与等离子体处理方法
JP6769127B2 (ja) * 2016-06-21 2020-10-14 東京エレクトロン株式会社 プラズマ処理装置
US10811233B2 (en) * 2016-08-13 2020-10-20 Applied Materials, Inc. Process chamber having tunable showerhead and tunable liner
CN108269728A (zh) * 2016-12-30 2018-07-10 中微半导体设备(上海)有限公司 电容耦合等离子体处理装置与等离子体处理方法
CN108269727A (zh) * 2016-12-30 2018-07-10 中微半导体设备(上海)有限公司 电容耦合等离子体处理装置与等离子体处理方法
CN112151343B (zh) * 2019-06-28 2023-03-24 中微半导体设备(上海)股份有限公司 一种电容耦合等离子体处理装置及其方法
CN112530776B (zh) * 2019-09-18 2024-02-09 中微半导体设备(上海)股份有限公司 一种等离子体处理装置
KR102235672B1 (ko) * 2019-12-19 2021-04-01 광운대학교 산학협력단 대면적 대기압 플라즈마 발생 장치 및 이를 작동하는 방법

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2005340760A (ja) * 2004-04-30 2005-12-08 Tokyo Electron Ltd プラズマ処理装置

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5825475A (ja) * 1981-08-05 1983-02-15 Nec Corp スパツタ装置
JP2794936B2 (ja) * 1990-11-20 1998-09-10 富士電機株式会社 プラズマ処理装置
JPH04299529A (ja) * 1991-03-28 1992-10-22 Matsushita Electric Ind Co Ltd ドライエッチング装置
KR970010266B1 (ko) * 1992-03-31 1997-06-23 미쯔시다덴기산교 가부시기가이샤 플라즈마 발생방법 및 그 장치
JPH1064883A (ja) * 1996-07-04 1998-03-06 Applied Materials Inc プラズマ装置
JP4527833B2 (ja) * 2000-02-28 2010-08-18 株式会社日立製作所 プラズマ処理装置および方法
US6706138B2 (en) * 2001-08-16 2004-03-16 Applied Materials Inc. Adjustable dual frequency voltage dividing plasma reactor

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2005340760A (ja) * 2004-04-30 2005-12-08 Tokyo Electron Ltd プラズマ処理装置

Also Published As

Publication number Publication date
JP2007242474A (ja) 2007-09-20
KR100884413B1 (ko) 2009-02-19
KR20070092682A (ko) 2007-09-13
CN101035405A (zh) 2007-09-12
JP4876641B2 (ja) 2012-02-15
KR20080092903A (ko) 2008-10-16
TW200809956A (en) 2008-02-16
CN101035405B (zh) 2010-11-10
KR100929945B1 (ko) 2009-12-04

Similar Documents

Publication Publication Date Title
TWI405258B (zh) Plasma processing device
KR100623829B1 (ko) 플라즈마 처리 장치 및 플라즈마 처리 방법
TWI445460B (zh) Induction coupling plasma processing device and plasma processing method
CN109994355B (zh) 一种具有低频射频功率分布调节功能的等离子反应器
KR101446378B1 (ko) 유도 결합 플라즈마 처리 장치
JP5666991B2 (ja) 誘導結合プラズマ用アンテナユニットおよび誘導結合プラズマ処理装置
TW201628122A (zh) 有著對稱供給結構之基板支架
JP5597071B2 (ja) アンテナユニットおよび誘導結合プラズマ処理装置
TWI634585B (zh) 電漿處理裝置及電漿分布調整方法
CN107527784B (zh) 等离子体处理装置
TW201447963A (zh) 感應耦合電漿處理裝置
KR101768761B1 (ko) 고주파 플라즈마 처리 장치 및 고주파 플라즈마 처리 방법
JP2012133899A (ja) プラズマ処理装置
WO2020022141A1 (ja) プラズマ処理装置
KR101666933B1 (ko) 유도 결합 플라즈마 처리 장치의 안테나
CN104517797B (zh) 等离子体处理装置
KR20140141268A (ko) 유도 결합 플라즈마 처리 장치
KR101557223B1 (ko) 유도결합용 플라즈마 처리 시스템
JP4554712B2 (ja) プラズマ処理装置
KR20160107147A (ko) 유도 결합 플라즈마 처리 장치의 안테나

Legal Events

Date Code Title Description
MM4A Annulment or lapse of patent due to non-payment of fees