TWI403621B - 抑制背景鍍覆 - Google Patents
抑制背景鍍覆 Download PDFInfo
- Publication number
- TWI403621B TWI403621B TW098125162A TW98125162A TWI403621B TW I403621 B TWI403621 B TW I403621B TW 098125162 A TW098125162 A TW 098125162A TW 98125162 A TW98125162 A TW 98125162A TW I403621 B TWI403621 B TW I403621B
- Authority
- TW
- Taiwan
- Prior art keywords
- plating
- metal
- layer
- doped
- phase
- Prior art date
Links
- 238000007747 plating Methods 0.000 title claims abstract description 145
- 230000002401 inhibitory effect Effects 0.000 title description 3
- 229910052751 metal Inorganic materials 0.000 claims abstract description 114
- 239000002184 metal Substances 0.000 claims abstract description 114
- 238000000034 method Methods 0.000 claims abstract description 46
- 238000000151 deposition Methods 0.000 claims abstract description 15
- 238000002834 transmittance Methods 0.000 claims abstract description 15
- 238000005530 etching Methods 0.000 claims abstract description 13
- 239000004065 semiconductor Substances 0.000 claims description 52
- 238000006243 chemical reaction Methods 0.000 claims description 46
- 229910052709 silver Inorganic materials 0.000 claims description 43
- 239000004332 silver Substances 0.000 claims description 43
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims description 40
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical group [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims description 32
- 239000002253 acid Substances 0.000 claims description 26
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical group [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 21
- 229910052802 copper Inorganic materials 0.000 claims description 21
- 239000010949 copper Substances 0.000 claims description 21
- 239000001993 wax Substances 0.000 claims description 21
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 claims description 18
- 229910052759 nickel Inorganic materials 0.000 claims description 16
- 229920000768 polyamine Polymers 0.000 claims description 14
- 239000007787 solid Substances 0.000 claims description 13
- 229910052763 palladium Inorganic materials 0.000 claims description 9
- 239000011347 resin Substances 0.000 claims description 8
- 229920005989 resin Polymers 0.000 claims description 8
- 239000000872 buffer Substances 0.000 claims description 7
- 239000007788 liquid Substances 0.000 claims description 6
- 238000007650 screen-printing Methods 0.000 claims description 5
- 239000007921 spray Substances 0.000 claims description 4
- 238000001459 lithography Methods 0.000 claims 1
- 230000008859 change Effects 0.000 abstract description 3
- 239000010410 layer Substances 0.000 description 151
- 239000000203 mixture Substances 0.000 description 66
- 235000012431 wafers Nutrition 0.000 description 64
- -1 polyethylene Polymers 0.000 description 22
- 150000001875 compounds Chemical class 0.000 description 20
- 230000008569 process Effects 0.000 description 19
- 230000007547 defect Effects 0.000 description 15
- 229910052782 aluminium Inorganic materials 0.000 description 14
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 14
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 13
- 229940088594 vitamin Drugs 0.000 description 12
- 229930003231 vitamin Natural products 0.000 description 12
- 235000013343 vitamin Nutrition 0.000 description 12
- 239000011782 vitamin Substances 0.000 description 12
- 239000013078 crystal Substances 0.000 description 11
- 238000001465 metallisation Methods 0.000 description 11
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 10
- 239000003792 electrolyte Substances 0.000 description 10
- 239000000126 substance Substances 0.000 description 10
- 239000011135 tin Substances 0.000 description 10
- 229910052718 tin Inorganic materials 0.000 description 10
- 150000002736 metal compounds Chemical class 0.000 description 9
- 125000000449 nitro group Chemical group [O-][N+](*)=O 0.000 description 9
- 150000003839 salts Chemical class 0.000 description 9
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 8
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 8
- VZXTWGWHSMCWGA-UHFFFAOYSA-N 1,3,5-triazine-2,4-diamine Chemical group NC1=NC=NC(N)=N1 VZXTWGWHSMCWGA-UHFFFAOYSA-N 0.000 description 7
- 235000001014 amino acid Nutrition 0.000 description 7
- 239000011248 coating agent Substances 0.000 description 7
- 238000000576 coating method Methods 0.000 description 7
- 239000003112 inhibitor Substances 0.000 description 7
- JEIPFZHSYJVQDO-UHFFFAOYSA-N iron(III) oxide Inorganic materials O=[Fe]O[Fe]=O JEIPFZHSYJVQDO-UHFFFAOYSA-N 0.000 description 7
- 238000004519 manufacturing process Methods 0.000 description 7
- 239000000463 material Substances 0.000 description 7
- LSNNMFCWUKXFEE-UHFFFAOYSA-M Bisulfite Chemical compound OS([O-])=O LSNNMFCWUKXFEE-UHFFFAOYSA-M 0.000 description 6
- 239000004215 Carbon black (E152) Substances 0.000 description 6
- KWYUFKZDYYNOTN-UHFFFAOYSA-M Potassium hydroxide Chemical compound [OH-].[K+] KWYUFKZDYYNOTN-UHFFFAOYSA-M 0.000 description 6
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 description 6
- 125000000217 alkyl group Chemical group 0.000 description 6
- 150000001413 amino acids Chemical class 0.000 description 6
- 230000008021 deposition Effects 0.000 description 6
- 229930195733 hydrocarbon Natural products 0.000 description 6
- 238000005245 sintering Methods 0.000 description 6
- 239000000956 alloy Substances 0.000 description 5
- 229910045601 alloy Inorganic materials 0.000 description 5
- 239000003638 chemical reducing agent Substances 0.000 description 5
- 239000003431 cross linking reagent Substances 0.000 description 5
- 238000009713 electroplating Methods 0.000 description 5
- 230000005855 radiation Effects 0.000 description 5
- 239000004094 surface-active agent Substances 0.000 description 5
- YBJHBAHKTGYVGT-ZKWXMUAHSA-N (+)-Biotin Chemical compound N1C(=O)N[C@@H]2[C@H](CCCCC(=O)O)SC[C@@H]21 YBJHBAHKTGYVGT-ZKWXMUAHSA-N 0.000 description 4
- CIWBSHSKHKDKBQ-JLAZNSOCSA-N Ascorbic acid Chemical compound OC[C@H](O)[C@H]1OC(=O)C(O)=C1O CIWBSHSKHKDKBQ-JLAZNSOCSA-N 0.000 description 4
- WSFSSNUMVMOOMR-UHFFFAOYSA-N Formaldehyde Chemical compound O=C WSFSSNUMVMOOMR-UHFFFAOYSA-N 0.000 description 4
- AUNGANRZJHBGPY-SCRDCRAPSA-N Riboflavin Chemical compound OC[C@@H](O)[C@@H](O)[C@@H](O)CN1C=2C=C(C)C(C)=CC=2N=C2C1=NC(=O)NC2=O AUNGANRZJHBGPY-SCRDCRAPSA-N 0.000 description 4
- 239000000654 additive Substances 0.000 description 4
- 125000004432 carbon atom Chemical group C* 0.000 description 4
- 239000004020 conductor Substances 0.000 description 4
- 239000012776 electronic material Substances 0.000 description 4
- 239000000499 gel Substances 0.000 description 4
- 125000000623 heterocyclic group Chemical group 0.000 description 4
- 150000002430 hydrocarbons Chemical class 0.000 description 4
- 125000004435 hydrogen atom Chemical group [H]* 0.000 description 4
- 125000004433 nitrogen atom Chemical group N* 0.000 description 4
- 239000012188 paraffin wax Substances 0.000 description 4
- 238000005240 physical vapour deposition Methods 0.000 description 4
- SQGYOTSLMSWVJD-UHFFFAOYSA-N silver(1+) nitrate Chemical compound [Ag+].[O-]N(=O)=O SQGYOTSLMSWVJD-UHFFFAOYSA-N 0.000 description 4
- 239000000758 substrate Substances 0.000 description 4
- 230000007704 transition Effects 0.000 description 4
- 150000003722 vitamin derivatives Chemical class 0.000 description 4
- KTALPKYXQZGAEG-UHFFFAOYSA-N 2-propan-2-ylthioxanthen-9-one Chemical compound C1=CC=C2C(=O)C3=CC(C(C)C)=CC=C3SC2=C1 KTALPKYXQZGAEG-UHFFFAOYSA-N 0.000 description 3
- XUJNEKJLAYXESH-REOHCLBHSA-N L-Cysteine Chemical compound SC[C@H](N)C(O)=O XUJNEKJLAYXESH-REOHCLBHSA-N 0.000 description 3
- AFVFQIVMOAPDHO-UHFFFAOYSA-N Methanesulfonic acid Chemical compound CS(O)(=O)=O AFVFQIVMOAPDHO-UHFFFAOYSA-N 0.000 description 3
- XSQUKJJJFZCRTK-UHFFFAOYSA-N Urea Natural products NC(N)=O XSQUKJJJFZCRTK-UHFFFAOYSA-N 0.000 description 3
- 150000007513 acids Chemical class 0.000 description 3
- 125000003277 amino group Chemical group 0.000 description 3
- 125000003118 aryl group Chemical group 0.000 description 3
- 239000003093 cationic surfactant Substances 0.000 description 3
- 238000007796 conventional method Methods 0.000 description 3
- 235000018417 cysteine Nutrition 0.000 description 3
- XUJNEKJLAYXESH-UHFFFAOYSA-N cysteine Natural products SCC(N)C(O)=O XUJNEKJLAYXESH-UHFFFAOYSA-N 0.000 description 3
- STVZJERGLQHEKB-UHFFFAOYSA-N ethylene glycol dimethacrylate Substances CC(=C)C(=O)OCCOC(=O)C(C)=C STVZJERGLQHEKB-UHFFFAOYSA-N 0.000 description 3
- 229910052732 germanium Inorganic materials 0.000 description 3
- 229910000449 hafnium oxide Inorganic materials 0.000 description 3
- WIHZLLGSGQNAGK-UHFFFAOYSA-N hafnium(4+);oxygen(2-) Chemical compound [O-2].[O-2].[Hf+4] WIHZLLGSGQNAGK-UHFFFAOYSA-N 0.000 description 3
- 229910052736 halogen Inorganic materials 0.000 description 3
- 150000002367 halogens Chemical class 0.000 description 3
- OAKJQQAXSVQMHS-UHFFFAOYSA-N hydrazine Substances NN OAKJQQAXSVQMHS-UHFFFAOYSA-N 0.000 description 3
- 239000001257 hydrogen Substances 0.000 description 3
- 229910052739 hydrogen Inorganic materials 0.000 description 3
- 238000005286 illumination Methods 0.000 description 3
- RAXXELZNTBOGNW-UHFFFAOYSA-N imidazole Natural products C1=CNC=N1 RAXXELZNTBOGNW-UHFFFAOYSA-N 0.000 description 3
- 229910021645 metal ion Inorganic materials 0.000 description 3
- 150000002739 metals Chemical class 0.000 description 3
- 239000000178 monomer Substances 0.000 description 3
- 230000003647 oxidation Effects 0.000 description 3
- 238000007254 oxidation reaction Methods 0.000 description 3
- 125000004430 oxygen atom Chemical group O* 0.000 description 3
- 235000019809 paraffin wax Nutrition 0.000 description 3
- 235000019271 petrolatum Nutrition 0.000 description 3
- 229920006122 polyamide resin Polymers 0.000 description 3
- 229920000728 polyester Polymers 0.000 description 3
- MZLGASXMSKOWSE-UHFFFAOYSA-N tantalum nitride Chemical compound [Ta]#N MZLGASXMSKOWSE-UHFFFAOYSA-N 0.000 description 3
- RBCOYOYDYNXAFA-UHFFFAOYSA-L (5-hydroxy-4,6-dimethylpyridin-3-yl)methyl phosphate Chemical compound CC1=NC=C(COP([O-])([O-])=O)C(C)=C1O RBCOYOYDYNXAFA-UHFFFAOYSA-L 0.000 description 2
- GHOKWGTUZJEAQD-ZETCQYMHSA-N (D)-(+)-Pantothenic acid Chemical compound OCC(C)(C)[C@@H](O)C(=O)NCCC(O)=O GHOKWGTUZJEAQD-ZETCQYMHSA-N 0.000 description 2
- GVJHHUAWPYXKBD-UHFFFAOYSA-N (±)-α-Tocopherol Chemical compound OC1=C(C)C(C)=C2OC(CCCC(C)CCCC(C)CCCC(C)C)(C)CCC2=C1C GVJHHUAWPYXKBD-UHFFFAOYSA-N 0.000 description 2
- AZQWKYJCGOJGHM-UHFFFAOYSA-N 1,4-benzoquinone Chemical compound O=C1C=CC(=O)C=C1 AZQWKYJCGOJGHM-UHFFFAOYSA-N 0.000 description 2
- XFCMNSHQOZQILR-UHFFFAOYSA-N 2-[2-(2-methylprop-2-enoyloxy)ethoxy]ethyl 2-methylprop-2-enoate Chemical compound CC(=C)C(=O)OCCOCCOC(=O)C(C)=C XFCMNSHQOZQILR-UHFFFAOYSA-N 0.000 description 2
- INQDDHNZXOAFFD-UHFFFAOYSA-N 2-[2-(2-prop-2-enoyloxyethoxy)ethoxy]ethyl prop-2-enoate Chemical compound C=CC(=O)OCCOCCOCCOC(=O)C=C INQDDHNZXOAFFD-UHFFFAOYSA-N 0.000 description 2
- KUDUQBURMYMBIJ-UHFFFAOYSA-N 2-prop-2-enoyloxyethyl prop-2-enoate Chemical compound C=CC(=O)OCCOC(=O)C=C KUDUQBURMYMBIJ-UHFFFAOYSA-N 0.000 description 2
- VVBLNCFGVYUYGU-UHFFFAOYSA-N 4,4'-Bis(dimethylamino)benzophenone Chemical compound C1=CC(N(C)C)=CC=C1C(=O)C1=CC=C(N(C)C)C=C1 VVBLNCFGVYUYGU-UHFFFAOYSA-N 0.000 description 2
- KWSLGOVYXMQPPX-UHFFFAOYSA-N 5-[3-(trifluoromethyl)phenyl]-2h-tetrazole Chemical compound FC(F)(F)C1=CC=CC(C2=NNN=N2)=C1 KWSLGOVYXMQPPX-UHFFFAOYSA-N 0.000 description 2
- FIHBHSQYSYVZQE-UHFFFAOYSA-N 6-prop-2-enoyloxyhexyl prop-2-enoate Chemical compound C=CC(=O)OCCCCCCOC(=O)C=C FIHBHSQYSYVZQE-UHFFFAOYSA-N 0.000 description 2
- COCLLEMEIJQBAG-UHFFFAOYSA-N 8-methylnonyl 2-methylprop-2-enoate Chemical compound CC(C)CCCCCCCOC(=O)C(C)=C COCLLEMEIJQBAG-UHFFFAOYSA-N 0.000 description 2
- KWOLFJPFCHCOCG-UHFFFAOYSA-N Acetophenone Chemical compound CC(=O)C1=CC=CC=C1 KWOLFJPFCHCOCG-UHFFFAOYSA-N 0.000 description 2
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 2
- OCUCCJIRFHNWBP-IYEMJOQQSA-L Copper gluconate Chemical compound [Cu+2].OC[C@@H](O)[C@@H](O)[C@H](O)[C@@H](O)C([O-])=O.OC[C@@H](O)[C@@H](O)[C@H](O)[C@@H](O)C([O-])=O OCUCCJIRFHNWBP-IYEMJOQQSA-L 0.000 description 2
- AUNGANRZJHBGPY-UHFFFAOYSA-N D-Lyxoflavin Natural products OCC(O)C(O)C(O)CN1C=2C=C(C)C(C)=CC=2N=C2C1=NC(=O)NC2=O AUNGANRZJHBGPY-UHFFFAOYSA-N 0.000 description 2
- ZZZCUOFIHGPKAK-UHFFFAOYSA-N D-erythro-ascorbic acid Natural products OCC1OC(=O)C(O)=C1O ZZZCUOFIHGPKAK-UHFFFAOYSA-N 0.000 description 2
- DHMQDGOQFOQNFH-UHFFFAOYSA-N Glycine Chemical compound NCC(O)=O DHMQDGOQFOQNFH-UHFFFAOYSA-N 0.000 description 2
- QIGBRXMKCJKVMJ-UHFFFAOYSA-N Hydroquinone Chemical compound OC1=CC=C(O)C=C1 QIGBRXMKCJKVMJ-UHFFFAOYSA-N 0.000 description 2
- OVBPIULPVIDEAO-UHFFFAOYSA-N N-Pteroyl-L-glutaminsaeure Natural products C=1N=C2NC(N)=NC(=O)C2=NC=1CNC1=CC=C(C(=O)NC(CCC(O)=O)C(O)=O)C=C1 OVBPIULPVIDEAO-UHFFFAOYSA-N 0.000 description 2
- PVNIIMVLHYAWGP-UHFFFAOYSA-N Niacin Chemical compound OC(=O)C1=CC=CN=C1 PVNIIMVLHYAWGP-UHFFFAOYSA-N 0.000 description 2
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 description 2
- 239000004698 Polyethylene Substances 0.000 description 2
- 239000002202 Polyethylene glycol Substances 0.000 description 2
- 239000004721 Polyphenylene oxide Substances 0.000 description 2
- KJTLSVCANCCWHF-UHFFFAOYSA-N Ruthenium Chemical compound [Ru] KJTLSVCANCCWHF-UHFFFAOYSA-N 0.000 description 2
- 229930003268 Vitamin C Natural products 0.000 description 2
- 239000002280 amphoteric surfactant Substances 0.000 description 2
- 230000003667 anti-reflective effect Effects 0.000 description 2
- 230000004888 barrier function Effects 0.000 description 2
- RWCCWEUUXYIKHB-UHFFFAOYSA-N benzophenone Chemical compound C=1C=CC=CC=1C(=O)C1=CC=CC=C1 RWCCWEUUXYIKHB-UHFFFAOYSA-N 0.000 description 2
- 239000012965 benzophenone Substances 0.000 description 2
- 239000011230 binding agent Substances 0.000 description 2
- 229960002685 biotin Drugs 0.000 description 2
- 235000020958 biotin Nutrition 0.000 description 2
- 239000011616 biotin Substances 0.000 description 2
- 239000006172 buffering agent Substances 0.000 description 2
- 150000001732 carboxylic acid derivatives Chemical class 0.000 description 2
- 125000002091 cationic group Chemical group 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 229940108925 copper gluconate Drugs 0.000 description 2
- 229910000365 copper sulfate Inorganic materials 0.000 description 2
- ORTQZVOHEJQUHG-UHFFFAOYSA-L copper(II) chloride Chemical compound Cl[Cu]Cl ORTQZVOHEJQUHG-UHFFFAOYSA-L 0.000 description 2
- ARUVKPQLZAKDPS-UHFFFAOYSA-L copper(II) sulfate Chemical compound [Cu+2].[O-][S+2]([O-])([O-])[O-] ARUVKPQLZAKDPS-UHFFFAOYSA-L 0.000 description 2
- 239000008367 deionised water Substances 0.000 description 2
- 229910021641 deionized water Inorganic materials 0.000 description 2
- 125000004386 diacrylate group Chemical group 0.000 description 2
- 239000003989 dielectric material Substances 0.000 description 2
- 235000014113 dietary fatty acids Nutrition 0.000 description 2
- 239000000539 dimer Substances 0.000 description 2
- 238000007772 electroless plating Methods 0.000 description 2
- 125000004185 ester group Chemical group 0.000 description 2
- CCIVGXIOQKPBKL-UHFFFAOYSA-M ethanesulfonate Chemical compound CCS([O-])(=O)=O CCIVGXIOQKPBKL-UHFFFAOYSA-M 0.000 description 2
- 229930195729 fatty acid Natural products 0.000 description 2
- 239000000194 fatty acid Substances 0.000 description 2
- 150000004665 fatty acids Chemical class 0.000 description 2
- 239000012467 final product Substances 0.000 description 2
- OVBPIULPVIDEAO-LBPRGKRZSA-N folic acid Chemical compound C=1N=C2NC(N)=NC(=O)C2=NC=1CNC1=CC=C(C(=O)N[C@@H](CCC(O)=O)C(O)=O)C=C1 OVBPIULPVIDEAO-LBPRGKRZSA-N 0.000 description 2
- 125000001183 hydrocarbyl group Chemical group 0.000 description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-M hydroxide Chemical compound [OH-] XLYOFNOQVPJJNP-UHFFFAOYSA-M 0.000 description 2
- 238000007654 immersion Methods 0.000 description 2
- 230000000977 initiatory effect Effects 0.000 description 2
- 229910052500 inorganic mineral Inorganic materials 0.000 description 2
- 229910001507 metal halide Inorganic materials 0.000 description 2
- 150000005309 metal halides Chemical class 0.000 description 2
- BDAGIHXWWSANSR-UHFFFAOYSA-N methanoic acid Natural products OC=O BDAGIHXWWSANSR-UHFFFAOYSA-N 0.000 description 2
- YDKNBNOOCSNPNS-UHFFFAOYSA-N methyl 1,3-benzoxazole-2-carboxylate Chemical compound C1=CC=C2OC(C(=O)OC)=NC2=C1 YDKNBNOOCSNPNS-UHFFFAOYSA-N 0.000 description 2
- 239000011707 mineral Substances 0.000 description 2
- 229960003512 nicotinic acid Drugs 0.000 description 2
- 235000001968 nicotinic acid Nutrition 0.000 description 2
- 239000011664 nicotinic acid Substances 0.000 description 2
- 239000002736 nonionic surfactant Substances 0.000 description 2
- FSAJWMJJORKPKS-UHFFFAOYSA-N octadecyl prop-2-enoate Chemical compound CCCCCCCCCCCCCCCCCCOC(=O)C=C FSAJWMJJORKPKS-UHFFFAOYSA-N 0.000 description 2
- 125000000962 organic group Chemical group 0.000 description 2
- 229940044652 phenolsulfonate Drugs 0.000 description 2
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 2
- 229920000570 polyether Polymers 0.000 description 2
- 229920000573 polyethylene Polymers 0.000 description 2
- 229920001223 polyethylene glycol Polymers 0.000 description 2
- 239000000047 product Substances 0.000 description 2
- 150000004060 quinone imines Chemical class 0.000 description 2
- 230000002829 reductive effect Effects 0.000 description 2
- GHMLBKRAJCXXBS-UHFFFAOYSA-N resorcinol Chemical compound OC1=CC=CC(O)=C1 GHMLBKRAJCXXBS-UHFFFAOYSA-N 0.000 description 2
- 230000002441 reversible effect Effects 0.000 description 2
- 239000002151 riboflavin Substances 0.000 description 2
- 229960002477 riboflavin Drugs 0.000 description 2
- 235000019192 riboflavin Nutrition 0.000 description 2
- 229910052707 ruthenium Inorganic materials 0.000 description 2
- 229910001961 silver nitrate Inorganic materials 0.000 description 2
- YPDPYLJJBBKICP-JIZZDEOASA-M silver;(2r)-2-amino-3-hydroxy-3-oxopropane-1-thiolate;nitric acid Chemical compound [Ag+].O[N+]([O-])=O.[S-]C[C@H](N)C(O)=O YPDPYLJJBBKICP-JIZZDEOASA-M 0.000 description 2
- 229910001379 sodium hypophosphite Inorganic materials 0.000 description 2
- KDYFGRWQOYBRFD-UHFFFAOYSA-N succinic acid Chemical compound OC(=O)CCC(O)=O KDYFGRWQOYBRFD-UHFFFAOYSA-N 0.000 description 2
- 150000003460 sulfonic acids Chemical class 0.000 description 2
- WGTYBPLFGIVFAS-UHFFFAOYSA-M tetramethylammonium hydroxide Chemical compound [OH-].C[N+](C)(C)C WGTYBPLFGIVFAS-UHFFFAOYSA-M 0.000 description 2
- JZRWCGZRTZMZEH-UHFFFAOYSA-N thiamine Chemical compound CC1=C(CCO)SC=[N+]1CC1=CN=C(C)N=C1N JZRWCGZRTZMZEH-UHFFFAOYSA-N 0.000 description 2
- UMGDCJDMYOKAJW-UHFFFAOYSA-N thiourea Chemical compound NC(N)=S UMGDCJDMYOKAJW-UHFFFAOYSA-N 0.000 description 2
- 150000003606 tin compounds Chemical class 0.000 description 2
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 description 2
- 235000019159 vitamin B9 Nutrition 0.000 description 2
- 239000011727 vitamin B9 Substances 0.000 description 2
- 235000019154 vitamin C Nutrition 0.000 description 2
- 239000011718 vitamin C Substances 0.000 description 2
- QYSXJUFSXHHAJI-YRZJJWOYSA-N vitamin D3 Chemical compound C1(/[C@@H]2CC[C@@H]([C@]2(CCC1)C)[C@H](C)CCCC(C)C)=C\C=C1\C[C@@H](O)CCC1=C QYSXJUFSXHHAJI-YRZJJWOYSA-N 0.000 description 2
- TXUICONDJPYNPY-UHFFFAOYSA-N (1,10,13-trimethyl-3-oxo-4,5,6,7,8,9,11,12,14,15,16,17-dodecahydrocyclopenta[a]phenanthren-17-yl) heptanoate Chemical compound C1CC2CC(=O)C=C(C)C2(C)C2C1C1CCC(OC(=O)CCCCCC)C1(C)CC2 TXUICONDJPYNPY-UHFFFAOYSA-N 0.000 description 1
- PUPZLCDOIYMWBV-UHFFFAOYSA-N (1R)-1,3-butanediol Natural products CC(O)CCO PUPZLCDOIYMWBV-UHFFFAOYSA-N 0.000 description 1
- WHOZNOZYMBRCBL-OUKQBFOZSA-N (2E)-2-Tetradecenal Chemical compound CCCCCCCCCCC\C=C\C=O WHOZNOZYMBRCBL-OUKQBFOZSA-N 0.000 description 1
- MSAHTMIQULFMRG-UHFFFAOYSA-N 1,2-diphenyl-2-propan-2-yloxyethanone Chemical compound C=1C=CC=CC=1C(OC(C)C)C(=O)C1=CC=CC=C1 MSAHTMIQULFMRG-UHFFFAOYSA-N 0.000 description 1
- VDYWHVQKENANGY-UHFFFAOYSA-N 1,3-Butyleneglycol dimethacrylate Chemical compound CC(=C)C(=O)OC(C)CCOC(=O)C(C)=C VDYWHVQKENANGY-UHFFFAOYSA-N 0.000 description 1
- 229940058015 1,3-butylene glycol Drugs 0.000 description 1
- CCEYVAPCYYFRMO-UHFFFAOYSA-N 1,3-didecyl-2-methylimidazol-1-ium Chemical compound CCCCCCCCCCN1C=C[N+](CCCCCCCCCC)=C1C CCEYVAPCYYFRMO-UHFFFAOYSA-N 0.000 description 1
- GJYWPRKIEORZLX-UHFFFAOYSA-M 1,3-didecyl-2-methylimidazol-1-ium;chloride Chemical compound [Cl-].CCCCCCCCCCN1C=C[N+](CCCCCCCCCC)=C1C GJYWPRKIEORZLX-UHFFFAOYSA-M 0.000 description 1
- SILNNFMWIMZVEQ-UHFFFAOYSA-N 1,3-dihydrobenzimidazol-2-one Chemical compound C1=CC=C2NC(O)=NC2=C1 SILNNFMWIMZVEQ-UHFFFAOYSA-N 0.000 description 1
- YHMYGUUIMTVXNW-UHFFFAOYSA-N 1,3-dihydrobenzimidazole-2-thione Chemical compound C1=CC=C2NC(S)=NC2=C1 YHMYGUUIMTVXNW-UHFFFAOYSA-N 0.000 description 1
- OXFSTTJBVAAALW-UHFFFAOYSA-N 1,3-dihydroimidazole-2-thione Chemical compound SC1=NC=CN1 OXFSTTJBVAAALW-UHFFFAOYSA-N 0.000 description 1
- 150000005208 1,4-dihydroxybenzenes Chemical class 0.000 description 1
- DKEGCUDAFWNSSO-UHFFFAOYSA-N 1,8-dibromooctane Chemical compound BrCCCCCCCCBr DKEGCUDAFWNSSO-UHFFFAOYSA-N 0.000 description 1
- RDLGTRBJUAWSAF-UHFFFAOYSA-N 1-(6-hydroxy-6-methylcyclohexa-2,4-dien-1-yl)propan-2-one Chemical compound CC(=O)CC1C=CC=CC1(C)O RDLGTRBJUAWSAF-UHFFFAOYSA-N 0.000 description 1
- ZDQNWDNMNKSMHI-UHFFFAOYSA-N 1-[2-(2-prop-2-enoyloxypropoxy)propoxy]propan-2-yl prop-2-enoate Chemical compound C=CC(=O)OC(C)COC(C)COCC(C)OC(=O)C=C ZDQNWDNMNKSMHI-UHFFFAOYSA-N 0.000 description 1
- YNSNJGRCQCDRDM-UHFFFAOYSA-N 1-chlorothioxanthen-9-one Chemical compound S1C2=CC=CC=C2C(=O)C2=C1C=CC=C2Cl YNSNJGRCQCDRDM-UHFFFAOYSA-N 0.000 description 1
- CTOHEPRICOKHIV-UHFFFAOYSA-N 1-dodecylthioxanthen-9-one Chemical compound S1C2=CC=CC=C2C(=O)C2=C1C=CC=C2CCCCCCCCCCCC CTOHEPRICOKHIV-UHFFFAOYSA-N 0.000 description 1
- KKTRZAZFCRHFFW-UHFFFAOYSA-N 1-nitrocyclohexa-3,5-diene-1,2-dicarboxylic acid Chemical compound OC(=O)C1C=CC=CC1(C(O)=O)[N+]([O-])=O KKTRZAZFCRHFFW-UHFFFAOYSA-N 0.000 description 1
- SEULWJSKCVACTH-UHFFFAOYSA-N 1-phenylimidazole Chemical compound C1=NC=CN1C1=CC=CC=C1 SEULWJSKCVACTH-UHFFFAOYSA-N 0.000 description 1
- ODRLUQGNINLIRR-UHFFFAOYSA-N 1-propylthioxanthen-9-one Chemical compound S1C2=CC=CC=C2C(=O)C2=C1C=CC=C2CCC ODRLUQGNINLIRR-UHFFFAOYSA-N 0.000 description 1
- FPIPGXGPPPQFEQ-UHFFFAOYSA-N 13-cis retinol Natural products OCC=C(C)C=CC=C(C)C=CC1=C(C)CCCC1(C)C FPIPGXGPPPQFEQ-UHFFFAOYSA-N 0.000 description 1
- HYZJCKYKOHLVJF-UHFFFAOYSA-N 1H-benzimidazole Chemical compound C1=CC=C2NC=NC2=C1 HYZJCKYKOHLVJF-UHFFFAOYSA-N 0.000 description 1
- XYHKNCXZYYTLRG-UHFFFAOYSA-N 1h-imidazole-2-carbaldehyde Chemical compound O=CC1=NC=CN1 XYHKNCXZYYTLRG-UHFFFAOYSA-N 0.000 description 1
- HYUJCWNGUFTNGI-UHFFFAOYSA-N 2,2-dimethylpropane prop-2-enoic acid Chemical compound CC(C)(C)C.OC(=O)C=C.OC(=O)C=C.OC(=O)C=C.OC(=O)C=C HYUJCWNGUFTNGI-UHFFFAOYSA-N 0.000 description 1
- JEUPWQVILXWUFD-UHFFFAOYSA-N 2-(1h-imidazol-2-yl)ethanol Chemical compound OCCC1=NC=CN1 JEUPWQVILXWUFD-UHFFFAOYSA-N 0.000 description 1
- GJYZJBJNBLCCQO-UHFFFAOYSA-N 2-(2h-benzotriazol-4-yl)ethanol Chemical compound OCCC1=CC=CC2=NNN=C12 GJYZJBJNBLCCQO-UHFFFAOYSA-N 0.000 description 1
- HZAXFHJVJLSVMW-UHFFFAOYSA-N 2-Aminoethan-1-ol Chemical compound NCCO HZAXFHJVJLSVMW-UHFFFAOYSA-N 0.000 description 1
- LBLYYCQCTBFVLH-UHFFFAOYSA-N 2-Methylbenzenesulfonic acid Chemical compound CC1=CC=CC=C1S(O)(=O)=O LBLYYCQCTBFVLH-UHFFFAOYSA-N 0.000 description 1
- PFRQBZFETXBLTP-RCIYGOBDSA-N 2-[(2e,6e,10e,14e,18e)-3,7,11,15,19,23-hexamethyltetracosa-2,6,10,14,18,22-hexaen-1-yl]-3-methyl-1,4-dihydronaphthalene-1,4-dione Chemical compound C1=CC=C2C(=O)C(C/C=C(C)/CC/C=C(C)/CC/C=C(C)/CC/C=C(C)/CC/C=C(C)/CCC=C(C)C)=C(C)C(=O)C2=C1 PFRQBZFETXBLTP-RCIYGOBDSA-N 0.000 description 1
- HWSSEYVMGDIFMH-UHFFFAOYSA-N 2-[2-[2-(2-methylprop-2-enoyloxy)ethoxy]ethoxy]ethyl 2-methylprop-2-enoate Chemical compound CC(=C)C(=O)OCCOCCOCCOC(=O)C(C)=C HWSSEYVMGDIFMH-UHFFFAOYSA-N 0.000 description 1
- OWDBMKZHFCSOOL-UHFFFAOYSA-N 2-[2-[2-(2-methylprop-2-enoyloxy)propoxy]propoxy]propyl 2-methylprop-2-enoate Chemical compound CC(=C)C(=O)OC(C)COC(C)COC(C)COC(=O)C(C)=C OWDBMKZHFCSOOL-UHFFFAOYSA-N 0.000 description 1
- PQAMFDRRWURCFQ-UHFFFAOYSA-N 2-ethyl-1h-imidazole Chemical compound CCC1=NC=CN1 PQAMFDRRWURCFQ-UHFFFAOYSA-N 0.000 description 1
- DAPXOJOQSNBLKY-UHFFFAOYSA-N 2-hexyl-1h-imidazole Chemical compound CCCCCCC1=NC=CN1 DAPXOJOQSNBLKY-UHFFFAOYSA-N 0.000 description 1
- NLGDWWCZQDIASO-UHFFFAOYSA-N 2-hydroxy-1-(7-oxabicyclo[4.1.0]hepta-1,3,5-trien-2-yl)-2-phenylethanone Chemical compound OC(C(=O)c1cccc2Oc12)c1ccccc1 NLGDWWCZQDIASO-UHFFFAOYSA-N 0.000 description 1
- LXBGSDVWAMZHDD-UHFFFAOYSA-N 2-methyl-1h-imidazole Chemical compound CC1=NC=CN1 LXBGSDVWAMZHDD-UHFFFAOYSA-N 0.000 description 1
- LBLYYCQCTBFVLH-UHFFFAOYSA-M 2-methylbenzenesulfonate Chemical compound CC1=CC=CC=C1S([O-])(=O)=O LBLYYCQCTBFVLH-UHFFFAOYSA-M 0.000 description 1
- ZDTMXUPOELDZKR-UHFFFAOYSA-N 2-propoxypentan-3-ol Chemical compound CCCOC(C)C(O)CC ZDTMXUPOELDZKR-UHFFFAOYSA-N 0.000 description 1
- MKBBSFGKFMQPPC-UHFFFAOYSA-N 2-propyl-1h-imidazole Chemical compound CCCC1=NC=CN1 MKBBSFGKFMQPPC-UHFFFAOYSA-N 0.000 description 1
- LLEASVZEQBICSN-UHFFFAOYSA-N 2-undecyl-1h-imidazole Chemical compound CCCCCCCCCCCC1=NC=CN1 LLEASVZEQBICSN-UHFFFAOYSA-N 0.000 description 1
- JMTMSDXUXJISAY-UHFFFAOYSA-N 2H-benzotriazol-4-ol Chemical compound OC1=CC=CC2=C1N=NN2 JMTMSDXUXJISAY-UHFFFAOYSA-N 0.000 description 1
- ZDWPBMJZDNXTPG-UHFFFAOYSA-N 2h-benzotriazol-4-amine Chemical compound NC1=CC=CC2=C1NN=N2 ZDWPBMJZDNXTPG-UHFFFAOYSA-N 0.000 description 1
- KFJDQPJLANOOOB-UHFFFAOYSA-N 2h-benzotriazole-4-carboxylic acid Chemical compound OC(=O)C1=CC=CC2=NNN=C12 KFJDQPJLANOOOB-UHFFFAOYSA-N 0.000 description 1
- RYKLZUPYJFFNRR-UHFFFAOYSA-N 3-hydroxypiperidin-2-one Chemical compound OC1CCCNC1=O RYKLZUPYJFFNRR-UHFFFAOYSA-N 0.000 description 1
- KFIRODWJCYBBHY-UHFFFAOYSA-N 3-nitrophthalic acid Chemical compound OC(=O)C1=CC=CC([N+]([O-])=O)=C1C(O)=O KFIRODWJCYBBHY-UHFFFAOYSA-N 0.000 description 1
- OSWFIVFLDKOXQC-UHFFFAOYSA-N 4-(3-methoxyphenyl)aniline Chemical compound COC1=CC=CC(C=2C=CC(N)=CC=2)=C1 OSWFIVFLDKOXQC-UHFFFAOYSA-N 0.000 description 1
- IASBMUIXBJNMDW-UHFFFAOYSA-N 4-aminonicotinic acid Chemical compound NC1=CC=NC=C1C(O)=O IASBMUIXBJNMDW-UHFFFAOYSA-N 0.000 description 1
- DBCAQXHNJOFNGC-UHFFFAOYSA-N 4-bromo-1,1,1-trifluorobutane Chemical compound FC(F)(F)CCCBr DBCAQXHNJOFNGC-UHFFFAOYSA-N 0.000 description 1
- NGKNMHFWZMHABQ-UHFFFAOYSA-N 4-chloro-2h-benzotriazole Chemical compound ClC1=CC=CC2=NNN=C12 NGKNMHFWZMHABQ-UHFFFAOYSA-N 0.000 description 1
- SLBQXWXKPNIVSQ-UHFFFAOYSA-N 4-nitrophthalic acid Chemical compound OC(=O)C1=CC=C([N+]([O-])=O)C=C1C(O)=O SLBQXWXKPNIVSQ-UHFFFAOYSA-N 0.000 description 1
- NSPMIYGKQJPBQR-UHFFFAOYSA-N 4H-1,2,4-triazole Chemical compound C=1N=CNN=1 NSPMIYGKQJPBQR-UHFFFAOYSA-N 0.000 description 1
- DDFHBQSCUXNBSA-UHFFFAOYSA-N 5-(5-carboxythiophen-2-yl)thiophene-2-carboxylic acid Chemical compound S1C(C(=O)O)=CC=C1C1=CC=C(C(O)=O)S1 DDFHBQSCUXNBSA-UHFFFAOYSA-N 0.000 description 1
- XHLKOHSAWQPOFO-UHFFFAOYSA-N 5-phenyl-1h-imidazole Chemical compound N1C=NC=C1C1=CC=CC=C1 XHLKOHSAWQPOFO-UHFFFAOYSA-N 0.000 description 1
- SAPGBCWOQLHKKZ-UHFFFAOYSA-N 6-(2-methylprop-2-enoyloxy)hexyl 2-methylprop-2-enoate Chemical compound CC(=C)C(=O)OCCCCCCOC(=O)C(C)=C SAPGBCWOQLHKKZ-UHFFFAOYSA-N 0.000 description 1
- LVGFPWDANALGOY-UHFFFAOYSA-N 8-methylnonyl prop-2-enoate Chemical compound CC(C)CCCCCCCOC(=O)C=C LVGFPWDANALGOY-UHFFFAOYSA-N 0.000 description 1
- ONMOULMPIIOVTQ-UHFFFAOYSA-N 98-47-5 Chemical compound OS(=O)(=O)C1=CC=CC([N+]([O-])=O)=C1 ONMOULMPIIOVTQ-UHFFFAOYSA-N 0.000 description 1
- IGLKULAEHPBIJL-UHFFFAOYSA-N 9h-carbazol-2-amine Chemical compound C1=CC=C2C3=CC=C(N)C=C3NC2=C1 IGLKULAEHPBIJL-UHFFFAOYSA-N 0.000 description 1
- QTBSBXVTEAMEQO-UHFFFAOYSA-M Acetate Chemical compound CC([O-])=O QTBSBXVTEAMEQO-UHFFFAOYSA-M 0.000 description 1
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 description 1
- VHUUQVKOLVNVRT-UHFFFAOYSA-N Ammonium hydroxide Chemical compound [NH4+].[OH-] VHUUQVKOLVNVRT-UHFFFAOYSA-N 0.000 description 1
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 1
- BTBUEUYNUDRHOZ-UHFFFAOYSA-N Borate Chemical compound [O-]B([O-])[O-] BTBUEUYNUDRHOZ-UHFFFAOYSA-N 0.000 description 1
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- NRRGBODDOGGPLS-UHFFFAOYSA-N C(C)(=O)C1=CC=CC=C1.C(C)O.C(C)O Chemical compound C(C)(=O)C1=CC=CC=C1.C(C)O.C(C)O NRRGBODDOGGPLS-UHFFFAOYSA-N 0.000 description 1
- RVIDTBZTSGFIFZ-UHFFFAOYSA-N C(CCC(=O)O)(=O)O.C(CCC(=O)O)(=O)OCCCCCCCCCC Chemical compound C(CCC(=O)O)(=O)O.C(CCC(=O)O)(=O)OCCCCCCCCCC RVIDTBZTSGFIFZ-UHFFFAOYSA-N 0.000 description 1
- BVKZGUZCCUSVTD-UHFFFAOYSA-L Carbonate Chemical compound [O-]C([O-])=O BVKZGUZCCUSVTD-UHFFFAOYSA-L 0.000 description 1
- 229910052684 Cerium Inorganic materials 0.000 description 1
- VEXZGXHMUGYJMC-UHFFFAOYSA-M Chloride anion Chemical compound [Cl-] VEXZGXHMUGYJMC-UHFFFAOYSA-M 0.000 description 1
- 239000005749 Copper compound Substances 0.000 description 1
- 239000004971 Cross linker Substances 0.000 description 1
- XFXPMWWXUTWYJX-UHFFFAOYSA-N Cyanide Chemical compound N#[C-] XFXPMWWXUTWYJX-UHFFFAOYSA-N 0.000 description 1
- RGHNJXZEOKUKBD-SQOUGZDYSA-M D-gluconate Chemical compound OC[C@@H](O)[C@@H](O)[C@H](O)[C@@H](O)C([O-])=O RGHNJXZEOKUKBD-SQOUGZDYSA-M 0.000 description 1
- MHZGKXUYDGKKIU-UHFFFAOYSA-N Decylamine Chemical compound CCCCCCCCCCN MHZGKXUYDGKKIU-UHFFFAOYSA-N 0.000 description 1
- 108091006149 Electron carriers Proteins 0.000 description 1
- BDAGIHXWWSANSR-UHFFFAOYSA-M Formate Chemical compound [O-]C=O BDAGIHXWWSANSR-UHFFFAOYSA-M 0.000 description 1
- UXMQORVHJMUQFD-UHFFFAOYSA-N Heptanophenone Chemical compound CCCCCCC(=O)C1=CC=CC=C1 UXMQORVHJMUQFD-UHFFFAOYSA-N 0.000 description 1
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- QNAYBMKLOCPYGJ-REOHCLBHSA-N L-alanine Chemical compound C[C@H](N)C(O)=O QNAYBMKLOCPYGJ-REOHCLBHSA-N 0.000 description 1
- FFEARJCKVFRZRR-BYPYZUCNSA-N L-methionine Chemical compound CSCC[C@H](N)C(O)=O FFEARJCKVFRZRR-BYPYZUCNSA-N 0.000 description 1
- 229910021586 Nickel(II) chloride Inorganic materials 0.000 description 1
- 239000004743 Polypropylene Substances 0.000 description 1
- FOIXSVOLVBLSDH-UHFFFAOYSA-N Silver ion Chemical compound [Ag+] FOIXSVOLVBLSDH-UHFFFAOYSA-N 0.000 description 1
- 229930182558 Sterol Natural products 0.000 description 1
- 229910021626 Tin(II) chloride Inorganic materials 0.000 description 1
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 1
- DAKWPKUUDNSNPN-UHFFFAOYSA-N Trimethylolpropane triacrylate Chemical compound C=CC(=O)OCC(CC)(COC(=O)C=C)COC(=O)C=C DAKWPKUUDNSNPN-UHFFFAOYSA-N 0.000 description 1
- OKKRPWIIYQTPQF-UHFFFAOYSA-N Trimethylolpropane trimethacrylate Chemical compound CC(=C)C(=O)OCC(CC)(COC(=O)C(C)=C)COC(=O)C(C)=C OKKRPWIIYQTPQF-UHFFFAOYSA-N 0.000 description 1
- FPIPGXGPPPQFEQ-BOOMUCAASA-N Vitamin A Natural products OC/C=C(/C)\C=C\C=C(\C)/C=C/C1=C(C)CCCC1(C)C FPIPGXGPPPQFEQ-BOOMUCAASA-N 0.000 description 1
- QYSXJUFSXHHAJI-XFEUOLMDSA-N Vitamin D3 Natural products C1(/[C@@H]2CC[C@@H]([C@]2(CCC1)C)[C@H](C)CCCC(C)C)=C/C=C1\C[C@@H](O)CCC1=C QYSXJUFSXHHAJI-XFEUOLMDSA-N 0.000 description 1
- 229930003427 Vitamin E Natural products 0.000 description 1
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 description 1
- ULQMPOIOSDXIGC-UHFFFAOYSA-N [2,2-dimethyl-3-(2-methylprop-2-enoyloxy)propyl] 2-methylprop-2-enoate Chemical compound CC(=C)C(=O)OCC(C)(C)COC(=O)C(C)=C ULQMPOIOSDXIGC-UHFFFAOYSA-N 0.000 description 1
- HVVWZTWDBSEWIH-UHFFFAOYSA-N [2-(hydroxymethyl)-3-prop-2-enoyloxy-2-(prop-2-enoyloxymethyl)propyl] prop-2-enoate Chemical compound C=CC(=O)OCC(CO)(COC(=O)C=C)COC(=O)C=C HVVWZTWDBSEWIH-UHFFFAOYSA-N 0.000 description 1
- 230000007488 abnormal function Effects 0.000 description 1
- 150000001242 acetic acid derivatives Chemical class 0.000 description 1
- NIXOWILDQLNWCW-UHFFFAOYSA-N acrylic acid group Chemical group C(C=C)(=O)O NIXOWILDQLNWCW-UHFFFAOYSA-N 0.000 description 1
- 230000000996 additive effect Effects 0.000 description 1
- 235000004279 alanine Nutrition 0.000 description 1
- 150000001447 alkali salts Chemical class 0.000 description 1
- 125000003342 alkenyl group Chemical group 0.000 description 1
- 229940045714 alkyl sulfonate alkylating agent Drugs 0.000 description 1
- 150000008052 alkyl sulfonates Chemical class 0.000 description 1
- FPIPGXGPPPQFEQ-OVSJKPMPSA-N all-trans-retinol Chemical compound OC\C=C(/C)\C=C\C=C(/C)\C=C\C1=C(C)CCCC1(C)C FPIPGXGPPPQFEQ-OVSJKPMPSA-N 0.000 description 1
- 229910000147 aluminium phosphate Inorganic materials 0.000 description 1
- 125000003368 amide group Chemical group 0.000 description 1
- 150000001408 amides Chemical class 0.000 description 1
- 150000001412 amines Chemical class 0.000 description 1
- 150000003862 amino acid derivatives Chemical class 0.000 description 1
- 239000000908 ammonium hydroxide Substances 0.000 description 1
- 125000000129 anionic group Chemical group 0.000 description 1
- 239000003945 anionic surfactant Substances 0.000 description 1
- 239000007798 antifreeze agent Substances 0.000 description 1
- 229910052787 antimony Inorganic materials 0.000 description 1
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 description 1
- 239000003963 antioxidant agent Substances 0.000 description 1
- 235000006708 antioxidants Nutrition 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 125000006615 aromatic heterocyclic group Chemical group 0.000 description 1
- 125000003710 aryl alkyl group Chemical group 0.000 description 1
- BCZWPKDRLPGFFZ-UHFFFAOYSA-N azanylidynecerium Chemical compound [Ce]#N BCZWPKDRLPGFFZ-UHFFFAOYSA-N 0.000 description 1
- SRSXLGNVWSONIS-UHFFFAOYSA-N benzenesulfonic acid Chemical compound OS(=O)(=O)C1=CC=CC=C1 SRSXLGNVWSONIS-UHFFFAOYSA-N 0.000 description 1
- 229940092714 benzenesulfonic acid Drugs 0.000 description 1
- QRUDEWIWKLJBPS-UHFFFAOYSA-N benzotriazole Chemical compound C1=CC=C2N[N][N]C2=C1 QRUDEWIWKLJBPS-UHFFFAOYSA-N 0.000 description 1
- 239000012964 benzotriazole Substances 0.000 description 1
- 125000001797 benzyl group Chemical group [H]C1=C([H])C([H])=C(C([H])=C1[H])C([H])([H])* 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 229920001400 block copolymer Polymers 0.000 description 1
- 229910021538 borax Inorganic materials 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 230000003139 buffering effect Effects 0.000 description 1
- 235000019437 butane-1,3-diol Nutrition 0.000 description 1
- 239000004202 carbamide Substances 0.000 description 1
- TWFZGCMQGLPBSX-UHFFFAOYSA-N carbendazim Chemical class C1=CC=C2NC(NC(=O)OC)=NC2=C1 TWFZGCMQGLPBSX-UHFFFAOYSA-N 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 150000007942 carboxylates Chemical class 0.000 description 1
- 125000002843 carboxylic acid group Chemical group 0.000 description 1
- 239000004203 carnauba wax Substances 0.000 description 1
- GWXLDORMOJMVQZ-UHFFFAOYSA-N cerium Chemical compound [Ce] GWXLDORMOJMVQZ-UHFFFAOYSA-N 0.000 description 1
- 229910000420 cerium oxide Inorganic materials 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- OEYIOHPDSNJKLS-UHFFFAOYSA-N choline Chemical compound C[N+](C)(C)CCO OEYIOHPDSNJKLS-UHFFFAOYSA-N 0.000 description 1
- 229960001231 choline Drugs 0.000 description 1
- 239000007979 citrate buffer Substances 0.000 description 1
- 239000011247 coating layer Substances 0.000 description 1
- FDJOLVPMNUYSCM-UVKKECPRSA-L cobalt(3+);[(2r,3s,4r,5s)-5-(5,6-dimethylbenzimidazol-1-yl)-4-hydroxy-2-(hydroxymethyl)oxolan-3-yl] [(2r)-1-[3-[(2r,3r,4z,7s,9z,12s,13s,14z,17s,18s,19r)-2,13,18-tris(2-amino-2-oxoethyl)-7,12,17-tris(3-amino-3-oxopropyl)-3,5,8,8,13,15,18,19-octamethyl-2,7, Chemical compound [Co+3].N#[C-].C1([C@H](CC(N)=O)[C@@]2(C)CCC(=O)NC[C@@H](C)OP([O-])(=O)O[C@H]3[C@H]([C@H](O[C@@H]3CO)N3C4=CC(C)=C(C)C=C4N=C3)O)[N-]\C2=C(C)/C([C@H](C\2(C)C)CCC(N)=O)=N/C/2=C\C([C@H]([C@@]/2(CC(N)=O)C)CCC(N)=O)=N\C\2=C(C)/C2=N[C@]1(C)[C@@](C)(CC(N)=O)[C@@H]2CCC(N)=O FDJOLVPMNUYSCM-UVKKECPRSA-L 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 229920001577 copolymer Polymers 0.000 description 1
- 150000001880 copper compounds Chemical class 0.000 description 1
- 230000001627 detrimental effect Effects 0.000 description 1
- PEVJCYPAFCUXEZ-UHFFFAOYSA-J dicopper;phosphonato phosphate Chemical compound [Cu+2].[Cu+2].[O-]P([O-])(=O)OP([O-])([O-])=O PEVJCYPAFCUXEZ-UHFFFAOYSA-J 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- XPPKVPWEQAFLFU-UHFFFAOYSA-J diphosphate(4-) Chemical compound [O-]P([O-])(=O)OP([O-])([O-])=O XPPKVPWEQAFLFU-UHFFFAOYSA-J 0.000 description 1
- 235000011180 diphosphates Nutrition 0.000 description 1
- 239000000975 dye Substances 0.000 description 1
- 230000005670 electromagnetic radiation Effects 0.000 description 1
- 239000003623 enhancer Substances 0.000 description 1
- 150000002148 esters Chemical class 0.000 description 1
- 125000003983 fluorenyl group Chemical group C1(=CC=CC=2C3=CC=CC=C3CC12)* 0.000 description 1
- 235000019253 formic acid Nutrition 0.000 description 1
- 238000009472 formulation Methods 0.000 description 1
- 230000004927 fusion Effects 0.000 description 1
- WIGCFUFOHFEKBI-UHFFFAOYSA-N gamma-tocopherol Natural products CC(C)CCCC(C)CCCC(C)CCCC1CCC2C(C)C(O)C(C)C(C)C2O1 WIGCFUFOHFEKBI-UHFFFAOYSA-N 0.000 description 1
- VGRFVJMYCCLWPQ-UHFFFAOYSA-N germanium Chemical compound [Ge].[Ge] VGRFVJMYCCLWPQ-UHFFFAOYSA-N 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 229940050410 gluconate Drugs 0.000 description 1
- 229960002449 glycine Drugs 0.000 description 1
- 235000013905 glycine and its sodium salt Nutrition 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- BHEPBYXIRTUNPN-UHFFFAOYSA-N hydridophosphorus(.) (triplet) Chemical compound [PH] BHEPBYXIRTUNPN-UHFFFAOYSA-N 0.000 description 1
- 239000012433 hydrogen halide Substances 0.000 description 1
- 229910000039 hydrogen halide Inorganic materials 0.000 description 1
- NPZTUJOABDZTLV-UHFFFAOYSA-N hydroxybenzotriazole Substances O=C1C=CC=C2NNN=C12 NPZTUJOABDZTLV-UHFFFAOYSA-N 0.000 description 1
- 238000003384 imaging method Methods 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 238000011065 in-situ storage Methods 0.000 description 1
- 239000011256 inorganic filler Substances 0.000 description 1
- 229910003475 inorganic filler Inorganic materials 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 238000005468 ion implantation Methods 0.000 description 1
- 230000001678 irradiating effect Effects 0.000 description 1
- 150000002576 ketones Chemical class 0.000 description 1
- 230000000670 limiting effect Effects 0.000 description 1
- 230000000873 masking effect Effects 0.000 description 1
- QSHDDOUJBYECFT-UHFFFAOYSA-N mercury Chemical compound [Hg] QSHDDOUJBYECFT-UHFFFAOYSA-N 0.000 description 1
- 229910052753 mercury Inorganic materials 0.000 description 1
- 229910001960 metal nitrate Inorganic materials 0.000 description 1
- 229940098779 methanesulfonic acid Drugs 0.000 description 1
- 229930182817 methionine Natural products 0.000 description 1
- 235000006109 methionine Nutrition 0.000 description 1
- XLSZMDLNRCVEIJ-UHFFFAOYSA-N methylimidazole Natural products CC1=CNC=N1 XLSZMDLNRCVEIJ-UHFFFAOYSA-N 0.000 description 1
- 230000005012 migration Effects 0.000 description 1
- 238000013508 migration Methods 0.000 description 1
- 150000007522 mineralic acids Chemical class 0.000 description 1
- 239000012170 montan wax Substances 0.000 description 1
- LNOPIUAQISRISI-UHFFFAOYSA-N n'-hydroxy-2-propan-2-ylsulfonylethanimidamide Chemical compound CC(C)S(=O)(=O)CC(N)=NO LNOPIUAQISRISI-UHFFFAOYSA-N 0.000 description 1
- QMMRZOWCJAIUJA-UHFFFAOYSA-L nickel dichloride Chemical compound Cl[Ni]Cl QMMRZOWCJAIUJA-UHFFFAOYSA-L 0.000 description 1
- CLDVQCMGOSGNIW-UHFFFAOYSA-N nickel tin Chemical compound [Ni].[Sn] CLDVQCMGOSGNIW-UHFFFAOYSA-N 0.000 description 1
- SFDJOSRHYKHMOK-UHFFFAOYSA-N nitramide Chemical group N[N+]([O-])=O SFDJOSRHYKHMOK-UHFFFAOYSA-N 0.000 description 1
- 150000002828 nitro derivatives Chemical class 0.000 description 1
- LJDZFAPLPVPTBD-UHFFFAOYSA-N nitroformic acid Chemical class OC(=O)[N+]([O-])=O LJDZFAPLPVPTBD-UHFFFAOYSA-N 0.000 description 1
- IQZPDFORWZTSKT-UHFFFAOYSA-N nitrosulphonic acid Chemical class OS(=O)(=O)[N+]([O-])=O IQZPDFORWZTSKT-UHFFFAOYSA-N 0.000 description 1
- 229910052755 nonmetal Inorganic materials 0.000 description 1
- 230000000269 nucleophilic effect Effects 0.000 description 1
- 239000002777 nucleoside Substances 0.000 description 1
- 150000003833 nucleoside derivatives Chemical class 0.000 description 1
- HMZGPNHSPWNGEP-UHFFFAOYSA-N octadecyl 2-methylprop-2-enoate Chemical compound CCCCCCCCCCCCCCCCCCOC(=O)C(C)=C HMZGPNHSPWNGEP-UHFFFAOYSA-N 0.000 description 1
- BMMGVYCKOGBVEV-UHFFFAOYSA-N oxo(oxoceriooxy)cerium Chemical compound [Ce]=O.O=[Ce]=O BMMGVYCKOGBVEV-UHFFFAOYSA-N 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 238000002161 passivation Methods 0.000 description 1
- 229960005222 phenazone Drugs 0.000 description 1
- 229940044654 phenolsulfonic acid Drugs 0.000 description 1
- 239000008363 phosphate buffer Substances 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 239000000049 pigment Substances 0.000 description 1
- 239000004014 plasticizer Substances 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 229920001281 polyalkylene Polymers 0.000 description 1
- 229920001748 polybutylene Polymers 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 229920001721 polyimide Polymers 0.000 description 1
- 239000009719 polyimide resin Substances 0.000 description 1
- 229920001155 polypropylene Polymers 0.000 description 1
- 229920005650 polypropylene glycol diacrylate Polymers 0.000 description 1
- 229920005651 polypropylene glycol dimethacrylate Polymers 0.000 description 1
- 229920005591 polysilicon Polymers 0.000 description 1
- 229910001380 potassium hypophosphite Inorganic materials 0.000 description 1
- CRGPNLUFHHUKCM-UHFFFAOYSA-M potassium phosphinate Chemical compound [K+].[O-]P=O CRGPNLUFHHUKCM-UHFFFAOYSA-M 0.000 description 1
- 239000010970 precious metal Substances 0.000 description 1
- 238000007639 printing Methods 0.000 description 1
- FBCQUCJYYPMKRO-UHFFFAOYSA-N prop-2-enyl 2-methylprop-2-enoate Chemical compound CC(=C)C(=O)OCC=C FBCQUCJYYPMKRO-UHFFFAOYSA-N 0.000 description 1
- KCXFHTAICRTXLI-UHFFFAOYSA-N propane-1-sulfonic acid Chemical compound CCCS(O)(=O)=O KCXFHTAICRTXLI-UHFFFAOYSA-N 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 238000004064 recycling Methods 0.000 description 1
- 230000002787 reinforcement Effects 0.000 description 1
- 230000003014 reinforcing effect Effects 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- CQLFBEKRDQMJLZ-UHFFFAOYSA-M silver acetate Chemical compound [Ag+].CC([O-])=O CQLFBEKRDQMJLZ-UHFFFAOYSA-M 0.000 description 1
- 229940071536 silver acetate Drugs 0.000 description 1
- 229940100890 silver compound Drugs 0.000 description 1
- 150000003379 silver compounds Chemical class 0.000 description 1
- GURNTNKIRDSILY-UHFFFAOYSA-M silver;ethanesulfonate Chemical compound [Ag+].CCS([O-])(=O)=O GURNTNKIRDSILY-UHFFFAOYSA-M 0.000 description 1
- FNCXHMHRNUNEMO-UHFFFAOYSA-M silver;propane-1-sulfonate Chemical compound [Ag+].CCCS([O-])(=O)=O FNCXHMHRNUNEMO-UHFFFAOYSA-M 0.000 description 1
- 239000004328 sodium tetraborate Substances 0.000 description 1
- 235000010339 sodium tetraborate Nutrition 0.000 description 1
- 238000002174 soft lithography Methods 0.000 description 1
- 238000001228 spectrum Methods 0.000 description 1
- 238000009718 spray deposition Methods 0.000 description 1
- 230000000087 stabilizing effect Effects 0.000 description 1
- 239000001119 stannous chloride Substances 0.000 description 1
- 235000011150 stannous chloride Nutrition 0.000 description 1
- 235000003702 sterols Nutrition 0.000 description 1
- 150000003432 sterols Chemical class 0.000 description 1
- 125000001424 substituent group Chemical group 0.000 description 1
- 239000001384 succinic acid Substances 0.000 description 1
- IIACRCGMVDHOTQ-UHFFFAOYSA-N sulfamic acid Chemical compound NS(O)(=O)=O IIACRCGMVDHOTQ-UHFFFAOYSA-N 0.000 description 1
- 229940124530 sulfonamide Drugs 0.000 description 1
- 150000003456 sulfonamides Chemical class 0.000 description 1
- BDHFUVZGWQCTTF-UHFFFAOYSA-M sulfonate Chemical compound [O-]S(=O)=O BDHFUVZGWQCTTF-UHFFFAOYSA-M 0.000 description 1
- 239000000725 suspension Substances 0.000 description 1
- 150000003536 tetrazoles Chemical class 0.000 description 1
- 239000002562 thickening agent Substances 0.000 description 1
- 125000003396 thiol group Chemical group [H]S* 0.000 description 1
- 150000003585 thioureas Chemical class 0.000 description 1
- YRHRIQCWCFGUEQ-UHFFFAOYSA-N thioxanthen-9-one Chemical compound C1=CC=C2C(=O)C3=CC=CC=C3SC2=C1 YRHRIQCWCFGUEQ-UHFFFAOYSA-N 0.000 description 1
- 230000009466 transformation Effects 0.000 description 1
- 150000003852 triazoles Chemical class 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
- 239000012178 vegetable wax Substances 0.000 description 1
- 235000019155 vitamin A Nutrition 0.000 description 1
- 239000011719 vitamin A Substances 0.000 description 1
- 235000005282 vitamin D3 Nutrition 0.000 description 1
- 239000011647 vitamin D3 Substances 0.000 description 1
- 235000019165 vitamin E Nutrition 0.000 description 1
- 229940046009 vitamin E Drugs 0.000 description 1
- 239000011709 vitamin E Substances 0.000 description 1
- 229940045997 vitamin a Drugs 0.000 description 1
- 229940021056 vitamin d3 Drugs 0.000 description 1
- 239000002699 waste material Substances 0.000 description 1
- 239000000080 wetting agent Substances 0.000 description 1
- 230000002087 whitening effect Effects 0.000 description 1
- 229910052725 zinc Inorganic materials 0.000 description 1
- 239000011701 zinc Substances 0.000 description 1
- GVJHHUAWPYXKBD-IEOSBIPESA-N α-tocopherol Chemical compound OC1=C(C)C(C)=C2O[C@@](CCC[C@H](C)CCC[C@H](C)CCCC(C)C)(C)CCC2=C1C GVJHHUAWPYXKBD-IEOSBIPESA-N 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D7/00—Electroplating characterised by the article coated
- C25D7/12—Semiconductors
- C25D7/123—Semiconductors first coated with a seed layer or a conductive layer
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C28/00—Coating for obtaining at least two superposed coatings either by methods not provided for in a single one of groups C23C2/00 - C23C26/00 or by combinations of methods provided for in subclasses C23C and C25C or C25D
- C23C28/30—Coatings combining at least one metallic layer and at least one inorganic non-metallic layer
- C23C28/32—Coatings combining at least one metallic layer and at least one inorganic non-metallic layer including at least one pure metallic layer
- C23C28/322—Coatings combining at least one metallic layer and at least one inorganic non-metallic layer including at least one pure metallic layer only coatings of metal elements only
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C28/00—Coating for obtaining at least two superposed coatings either by methods not provided for in a single one of groups C23C2/00 - C23C26/00 or by combinations of methods provided for in subclasses C23C and C25C or C25D
- C23C28/30—Coatings combining at least one metallic layer and at least one inorganic non-metallic layer
- C23C28/34—Coatings combining at least one metallic layer and at least one inorganic non-metallic layer including at least one inorganic non-metallic material layer, e.g. metal carbide, nitride, boride, silicide layer and their mixtures, enamels, phosphates and sulphates
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C28/00—Coating for obtaining at least two superposed coatings either by methods not provided for in a single one of groups C23C2/00 - C23C26/00 or by combinations of methods provided for in subclasses C23C and C25C or C25D
- C23C28/30—Coatings combining at least one metallic layer and at least one inorganic non-metallic layer
- C23C28/34—Coatings combining at least one metallic layer and at least one inorganic non-metallic layer including at least one inorganic non-metallic material layer, e.g. metal carbide, nitride, boride, silicide layer and their mixtures, enamels, phosphates and sulphates
- C23C28/345—Coatings combining at least one metallic layer and at least one inorganic non-metallic layer including at least one inorganic non-metallic material layer, e.g. metal carbide, nitride, boride, silicide layer and their mixtures, enamels, phosphates and sulphates with at least one oxide layer
-
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D5/00—Electroplating characterised by the process; Pretreatment or after-treatment of workpieces
- C25D5/02—Electroplating of selected surface areas
- C25D5/022—Electroplating of selected surface areas using masking means
-
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D5/00—Electroplating characterised by the process; Pretreatment or after-treatment of workpieces
- C25D5/02—Electroplating of selected surface areas
- C25D5/024—Electroplating of selected surface areas using locally applied electromagnetic radiation, e.g. lasers
-
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D5/00—Electroplating characterised by the process; Pretreatment or after-treatment of workpieces
- C25D5/02—Electroplating of selected surface areas
- C25D5/028—Electroplating of selected surface areas one side electroplating, e.g. substrate conveyed in a bath with inhibited background plating
-
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D5/00—Electroplating characterised by the process; Pretreatment or after-treatment of workpieces
- C25D5/34—Pretreatment of metallic surfaces to be electroplated
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0216—Coatings
- H01L31/02161—Coatings for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/02167—Coatings for devices characterised by at least one potential jump barrier or surface barrier for solar cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0216—Coatings
- H01L31/02161—Coatings for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/02167—Coatings for devices characterised by at least one potential jump barrier or surface barrier for solar cells
- H01L31/02168—Coatings for devices characterised by at least one potential jump barrier or surface barrier for solar cells the coatings being antireflective or having enhancing optical properties for the solar cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Organic Chemistry (AREA)
- Metallurgy (AREA)
- Materials Engineering (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Electromagnetism (AREA)
- Electrochemistry (AREA)
- Sustainable Development (AREA)
- Physics & Mathematics (AREA)
- Life Sciences & Earth Sciences (AREA)
- Inorganic Chemistry (AREA)
- Sustainable Energy (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Power Engineering (AREA)
- General Physics & Mathematics (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Mechanical Engineering (AREA)
- Optics & Photonics (AREA)
- Electrodes Of Semiconductors (AREA)
- Electroplating Methods And Accessories (AREA)
- Electroplating And Plating Baths Therefor (AREA)
- Chemically Coating (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
Description
本發明係有關抑制背景鍍覆之方法。更具體地，本發明係有關以具有高透光度之相轉換阻抗抑制背景鍍覆之方法。
於工作件上不欲鍍覆之區域之鍍覆有時稱為背景鍍覆。對於選擇性鍍覆為所欲者(例如經鍍覆高精確性電子元件的製造中)而言，背景鍍覆對工作件之功能或外觀通常為不利。背景鍍覆可導致工作件的電性短路及於其中使用該工作件之電子設備的功能不正常。再者，背景鍍覆亦導致鍍覆材料之浪費。此浪費增加了該製程及最終產物之成本。若經鍍覆的特定金屬恰巧是貴金屬，諸如金、銀、鉑或鈀，則此成本增加可能就非常多。即使自背景鍍覆之區域回收金屬之情況為所欲及實用，回收金屬增加了用於製造最終產物之總體製程之復雜性及成本。
多種習知的選擇性鍍覆之方法需要多個步驟。當把固體遮罩用於例如覆蓋工作件上不欲進行鍍覆之區域時，將遮罩塗覆至該工作件，之後對該工作件進行選擇性鍍覆並剝離該遮罩。然而，仍然存在與遮罩之製造、施用及自該工作件剝離相關之成本及復雜性之問題。再者，該固體遮罩並不總是能輕易或是能夠被塗覆並自該工作件去除。這在當有難以觸及或是無法構及的欲經遮罩之工作件區域時尤其為真。這類工作件之一種實例為光伏打裝置，用於塗覆導體或半導體材料之介電層之瑕疵、裂縫或針孔為背景鍍覆之目標位置。該等缺陷尺寸小，因此將遮罩應用至該等位置不實際。再者，該等缺陷由於尺寸微小，通常非肉眼可見，且直到金屬鍍覆完成且所得物件不適用商業應用為止，工人們通常無法意識到該等缺陷的存在。
光伏打裝置(諸如太陽能電池)通常包括形成單個巨型PN接面之半導體晶圓。電磁輻射(如太陽光)照射於該接面上而於該裝置中產生電子載體並產生電流，該電流被收集起來並傳導至外部電路。所產生的電流與入射輻射大致成比例。與PN接面之兩側以歐姆接觸之金屬圖案收集該電流。該金屬圖案需具有一條低電阻通路以最小化所產生電流之電阻損失。必須限制該金屬圖案之物理面積，特別是於該裝置之正面之物理面積，以最小化阻礙入射能之表面積，即最小化用於產生電流之能量損失。典型地，該正面金屬圖案包括相當高導電性材料之窄條帶。在該傳導材料之窄條帶之間為摻雜有半導體材料(例如摻雜有矽)之薄介電材料塗覆層。該介電層之厚度可為200奈米(nm)至500nm。於太陽能電池中，該介電層可作用為抗反射層。該介電材料之實例為二氧化矽及氮化矽。
在光伏打裝置之製造過程中，在形成用於該裝置之金屬圖案之前，該介電層形成於摻雜半導體材料上。該介電層之形成可藉由化學氣相沉積或物理氣相沉積而實現。一旦該介電層沉積，就藉由習知成像方法形成圖案，並且使用習知方法於該圖案中沉積金屬以使其導電。在該圖案之金屬化過程中，於介電層之缺陷可引起不需要的背景鍍覆的產生，從而導致該製品不適於商業應用。如上所述，該缺陷通常直到金屬化完成前無法感知者。
缺陷(諸如裂縫、瑕疵或針孔)會曝露出該半導體之經摻雜發射件層並作為背景鍍覆的目標位置，因而危及所欲的選擇性鍍覆。咸信該等缺陷係由於該介電層脆弱及細薄而於製造製程之一個或更多個步驟中產生或於該半導體之操作過程中產生。由於該等缺陷尺寸小(大多為微觀尺寸)，應用習知固體遮罩來解決背景鍍覆問題不太實際。許多固體遮罩不能與該介電層連接以致於可能於該遮罩與該介電層之間所形成之空間處發生背景鍍覆。另外，該遮罩不允許足夠的光穿過而到達該經摻雜半導體，並於光引發及光輔助製程中提供足夠的電流用於金屬鍍覆。固體遮罩通常由不透光材料製成。
美國專利第4,217,183號揭示了在用於積體電路及電路板之晶圓之金屬化過程中，於導電表面(如陰極)上最小化背景鍍覆之無遮罩方法。該陰極可為金屬、光導體或絕緣體與導體之複合結構。該專利揭示將陰極及陽極置於鎳或銅電解液中，以諸如氬雷射器將能量光束聚焦通過電解液至該陰極的選擇性區域(鍍覆為所欲者處)並在該陰極與陽極之間建立電勢。雖然該專利揭示了用於最小化背景鍍覆之無遮罩方法，但是該方法仍然不適合用於解決由半導體之介電層中之缺陷所引起之背景鍍覆。通常而言，該等缺陷用肉眼看不到。因此，在設法避免該等缺陷過程中選擇性應用能量光束不實際。再者，即使將用於指引該能量束之圖案形成於工作件上(排除介電材料)，來自該光束之足夠的能量可能與位於圖案週邊之介電層中之微觀缺陷重疊而導致不利的背景鍍覆。因此，產業上仍然需要一種於半導體上抑制背景鍍覆之方法。
提供一種方法，包括：a)提供包括n摻雜正面及p摻雜背面之經摻雜半導體及覆蓋該經摻雜半導體之n摻雜正面之介電層；b)於該介電層上選擇性沉積透光度為30%或更大之相轉換阻抗以於該介電層上形成圖案；c)蝕刻掉該介電層未被相轉換阻抗覆蓋之部分以曝露該摻雜半導體之n摻雜正面之部分；d)於該摻雜半導體之n摻雜正面之曝露部分沉積金屬晶種層；以及e)藉由光引發鍍覆於該金屬晶種層上沉積金屬層。
於介電層上之背景鍍覆會產生商業上不可接受的產物。遺憾的是，引起背景鍍覆之介電層上之缺陷通常因為尺寸微小而難以用肉眼觀察到。因此，工人們通常在金屬化之後於該介電層上之背景鍍覆比較容易看到時才能發現缺陷。很多習知的遮蓋方法不太適合，尤其是對光引發鍍覆來說，因為遮罩不夠透明以至於不能使足量的光穿過並接觸經摻雜半導體以產生電流。另外，很多習知的無遮罩方法亦不適合。遺憾的是，沒有一種商業上實用的方法能從該介電層上去除該非所欲鍍覆並且所得的產物不適合用作商業用途。
於經摻雜半導體之介電層上沉積透光度為30%或更大之相轉換阻抗之方法藉由使足量的光通過相轉換阻抗到達經摻雜半導體而解決了背景鍍覆之問題。該光於該經摻雜半導體中產生電流從而能於經摻雜半導體未被相轉換阻抗覆蓋之部分實現金屬鍍覆。於介電層上之相轉換阻抗係作為鍍覆阻抗，以抑制於該介電層上之任何背景鍍覆，因此金屬鍍覆被限制於經摻雜半導體之選擇部分。可使用傳統設備於介電層上沉積呈液體、半固體或凝膠之相轉換阻抗。該相轉換阻抗可填充瑕疵、裂縫及針孔，因此於介電層之該等區域中防止非所欲的背景鍍覆。此外，該相轉換阻抗作為蝕刻阻抗，並相容於多種用於光微影製程之習知酸及緩衝氧化物蝕刻劑。再者，由於該金屬鍍覆製程為等向性，並且金屬鍍覆的厚度通常大於介電層的厚度，因此該相轉換阻抗用於限制金屬的側邊生長，其減少因經鍍覆金屬所致之任何非所欲光的陰影。這就防止了因金屬生長所致之經摻雜半導體層的入射光的損失。
本發明通篇所使用的術語“沉積”及“鍍覆”可交替使用。術語“電軌”及“電線”可交替使用。不定冠詞“a”及“an”既包括單數也包括復數。術語“光引發鍍覆”亦稱為“光輔助鍍覆”。術語“選擇性鍍覆”係指沉積發生於基板上特定所欲區域。術語“半固體”係指任何具有固體與液體兩種屬性之物質。術語“凝膠”係指分散於液體之固體膠狀懸浮物。術語“透光度”係指輻射能(諸如紅外光、可見光、紫外光、X射線及伽瑪射線)透過物質之分率。術語“等向性”係指於各個方向上相等；不論是哪個方向都沒有差異。術語“lux=lx”係指等於1流明/平方米之照明單位；並且1lux=1.46毫瓦輻射電磁(EM)功率(頻率為540兆赫茲)。除非本發明另外清楚指明，以下縮寫具有下列意義：℃=攝氏度；g=公克；mL=毫升；L=公升；A=安培；m=米；mm=毫米；dm=分米；cm=釐米；μm=微米；nm=奈米；min.=分鐘；sec.=秒；UV=紫外線；mJ=毫焦耳=1/1000焦耳；1erg=1達因 釐米=10-7
焦耳。除非另行說明，所有百分比及比率皆為重量比。除了所述數值範圍很明顯地受限於總和為100%外，所有範圍都包括上下限值並且可以任意順序組合。
光伏打電池半導體及太陽能電池半導體可包括單晶或多晶或非定型矽晶圓。雖然下述說明係關於矽晶圓，但亦可使用其他適當的半導體晶圓，如鎵-砷晶圓、矽-鍺晶圓及鍺晶圓。當使用矽晶圓時，其通常具有p型基底摻雜，但可具有n型基底摻雜。
該半導體晶圓可為圓形、正方形或長方形或可為任何其他適當的形狀。該晶圓可具有非常寬泛的尺寸。例如，圓形晶圓之直徑可為150nm、200nm、300nm、400nm或更大。
晶圓的整個背面可塗覆金屬或晶圓的背面的一部分可塗覆金屬，例如形成格柵。所述背面金屬化可藉由多種技術實現並可在對該晶圓之正面金屬化之前完成或可在對該晶圓之正面金屬化同時完成。通常該晶圓之背面之金屬化在正面金屬化之前。於本發明之一具體實施方式中，金屬塗覆以導電膏的形式施加至背面，諸如含銀膏、含鋁膏或含銀及鋁膏；但是，亦可使用包括諸如鎳、鈀、銅、鋅或錫之金屬的其他膏。所述導電膏通常包括包埋於玻璃基質之導電顆粒及有機黏合劑。導電膏可藉由多種技術(諸如網印)塗覆至晶圓。該膏施加後，點火以去除該有機黏合劑。點火通常於溫度600℃至800℃進行。當使用含鋁導電膏時，鋁會部分擴散至該晶圓的背面，或者若使用的膏亦含銀時，可能與銀形成合金。使用所述的含鋁膏可提高電阻接觸並提供“p+”摻雜區。藉由應用前述鋁或硼及之後互相擴散亦可生產高度摻雜“p+”型區(“p++”型區)。典型為製備高度摻雜“p+”型區。於本發明之一具體實施方式中，含鋁膏可在施加背面金屬塗覆之前施加於背面並點火。含鋁膏點火後之殘質可在施加背面金屬塗覆之前視需要地去除。於本發明之一替換具體實施方式中，可藉由無電鍍覆或電解鍍覆於晶圓之背面沉積晶種層並於該晶種層上沉積金屬塗覆。可使用光引發或光輔助鍍覆方法，於晶圓背面之晶種層上進行此金屬沉積時同時進行於晶圓正面之金屬沉積。
該晶圓之正面可視需要進行晶向紋理(crystal-oriented texture)蝕刻以為該表面提供改善之光入射幾何(其減少反射)。為了生產半導體接面，於該晶圓的正面進行磷擴散或離子植入以生產n摻雜區並為該晶圓提供PN接面。該n摻雜區可稱為發射極層。該n摻雜區可為“n+”摻雜或高度“n+”摻雜(“n++”摻雜)。典型地該發射極層為高度“n+”摻雜。
將介電層施加至該晶圓之正面或發射極層。該介電層既可作為鈍化層又可作為抗反射層。適當的介電層包括，但不限於氧化矽層(如SiOx
)、氮化矽層(如Si3
N4
)、氧化矽層與氮化矽層之組合以及氧化矽層、氮化矽層與氧化鈦(如TiOx
)層之組合。視需要地，SiOx
可作為Si3
N4
上之帽蓋層。於前述式中，x係表示氧原子個數之整數。典型地，x為2。介電層可藉由多種技術沉積，諸如多種氣相沉積方法，如化學氣相沉積及物理氣相沉積。
透光度為30%或更大之相轉換阻抗可選擇性地沉積於介電層上，以形成圖案，以畫出將於晶圓正面上形成之電軌及匯流排之輪廓。典型地，該透光度為自35%至100%，或自40%至95%，或自50%至80%。該相轉換阻抗可藉由噴墨、噴霧、網印或平版印刷而選擇性地施加至介電層。可使用習知噴墨、噴霧、網印或平版印刷方法。亦可使用沖壓或軟平版印刷。
透過該相轉換阻抗之光的波長範圍至少為300nm或更大。典型地，該波長範圍為自350nm至1500nm，更典型地為400nm至1200nm。
若該相轉換阻抗可固化，則在蝕刻掉介電層之用於形成電軌及匯流排之部分之前固化該阻抗。固化可使用習知固化設備藉由光化輻射(諸如光或熱)而完成。典型地，固化使用UV光完成。
之後，將介電層之未被該相轉換阻抗塗覆之部分蝕刻掉以曝露該晶圓之n摻雜發射極層。該n摻雜可為n+或n++。典型地，該發射極層為n++摻雜。可使用無機酸(如氫氟酸、磷酸及其混合物)蝕刻掉該介電層。所述酸用於去除介電塗覆。所用濃度範圍很寬泛。緩衝氧化物蝕刻劑亦可用於蝕刻掉該介電層。該相轉換阻抗作為酸蝕刻或緩衝氧化物蝕刻劑阻抗並可承受與該酸蝕刻劑或緩衝氧化物蝕刻劑接觸。
之後於該正面界定出溝槽圖案。該溝槽圖案深達抗反射(或介電)層並進入該晶圓之半導體基體中。該溝槽深入該晶圓之半導體基體的深度為0.2μm至20μm。溝槽深度可更深或更淺。所述溝槽之寬度可自20μm至150μm。通常每個溝槽之間的距離為自1mm至10mm。
晶圓之正面含有金屬化圖案。例如，晶圓之正面可包括電流收集線及電流匯流排。電流收集線垂直於該匯流排並與電流匯流排相比通常具有相對細小(即尺寸)的結構。
該相轉換阻抗包括下述組份，其提供30%或更大之透光度並提供能抵抗無機酸蝕刻以及緩衝氧化物蝕刻劑之阻抗。所述材料包括，但不限於蠟(如天然蠟、化學質蠟及合成蠟)及聚醯胺樹脂。天然蠟包括，但不限於棕櫚蠟、褐煤蠟、植物蠟、脂肪酸蠟。合成蠟包括，但不限於石蠟、微晶聚乙烯蠟、聚丙烯蠟、聚丁烯蠟、聚乙烯丙烯酸蠟、聚酯蠟及費-托(Fischer-Tropsch)蠟。化學改質蠟包括蠟的衍生物。典型所使用的蠟為脂肪酸蠟及石蠟及其衍生物。更典型使用的為石蠟。美國專利案第5,645,632號；第5,783,657號；第5,998,570號；第6,268,466號；第6,399,713號；第6,492,458號；第6,552,160號；第5,981,680號；第4,816,549號；第6,870,011號；第6,864,349號；及第6,956,099號；以及美國專利申請案公開第20040186263號揭示了可用於相轉換阻抗之聚醯胺樹脂之實例，其整體倂入本文中作為參考。商業上可獲得的聚醯胺樹脂之實例為2612、5600、6100、100、100LM、C75v、100及100v。所有的聚醯胺樹脂都可自美國公司(Arizona Chemical Company,Florida,Jacksonville)購得。
聚醯胺樹脂之其中一類為酯封端聚醯胺(ETPA)。該ETPA包括至少一種式(1)所示之化合物：
其中，n表示使該酯基為酯基及胺基總數的10%至50%之重復單元數；每處出現的R1
獨立選自含有至少4個碳原子之烷基或烯基；每處出現的R2
獨立選自C4-42
烴基，且限制條件為至少50%之R2
基含有30至42個碳原子；每處出現的R3
獨立選自除了氫原子之外還含有至少兩個碳原子之有機基團，並且視需要地含有一個或多個氧原子及氮原子；每處出現的R3a
獨立選自氫、C1-10
烷基或直接鍵聯至R3
或另一個R3a
，從而使同時鍵聯至R3
及R3a
之N原子係雜環結構的一部分，該雜環結構之該部分的定義為R3a
-N-R3
，從而至少50%之R3a
基係氫。美國專利案第5,783,657號揭示了製造此ETPA聚醯胺之方法，其整體倂入本文中作為參考。
另一類聚醯胺樹脂為三級醯胺封端聚醯胺(ATPA)。該ATPA包括至少一種式(2)所示之化合物：
其中，m表示使末端醯胺基(即直接與R4
鍵聯之醯胺基)為ATPA之總醯胺基的10%至50%之重復單元數；每處出現的R4
獨立選自C1-22
烴基；每處出現的R5
獨立選自C2-24
烴基；每處出現的R6
獨立選自除了氫原子之外還含有至少兩個碳原子之有機基團，並且視需要地含有一個或多個氧原子及氮原子；以及每處出現的R6a
獨立選自氫、C1-10
烷基及直接鍵聯至R6
或另一個R6a
，從而同時鍵聯至R6
及R6a
之N原子係雜環結構的一部分，該雜環結構之該部分定義為R6a
-N-R6
。美國專利案第6,268,466號揭示了製造此ATPA聚醯胺之方法，其整體倂入本文中作為參考。
又一類聚醯胺樹脂為聚伸烷基氧封端聚醯胺(PAOPA)。該PAOPA含有至少一種下式所示之嵌段共聚物：烴基-聚醚-聚醯胺-聚醚-烴基。該聚醯胺嵌段包括式(3)所示之嵌段：
其中，R7
係烴雙自由基，諸如衍生自二聚酸之烴雙自由基，例如其中R7
包括自二聚酸去除兩個羧酸基所產生之雙自由基；R8
係選自烴及聚醚雙自由基；該聚醚嵌段包括式(4)所示之嵌段：-(R9
-O)-，其中R9
為烴；C1-22
烴自由基位於該共聚物的任意一端，其中該烴自由基可視需要地選自烷基、芳烷基、芳基及烷芳基之自由基。美國專利案第6,399,713號揭示了製造PAOPA之方法，其整體倂入本文中作為參考。
蠟及聚醯胺樹脂係包含於相轉換阻抗中，其用量使得該相轉換阻抗足夠透明以使足夠的光透過而到達經摻雜半導體晶圓，從而產生足夠的電流用於金屬沉積。蠟及聚醯胺樹脂之用量可為10重量%至100重量%，或20重量%至80重量%，或30重量%至70重量%，或40重量%至60重量%。
一種或多種添加劑可視需要地包含於該阻抗組合物中。所述添加劑包括，但不限於交聯劑、抗氧劑、潤濕劑、可塑劑、無機填料、染料、顏料、光亮劑、增稠劑及光引發劑。可使用習知的交聯劑、光引發劑及其他添加劑。添加劑的用量為不影響該相轉換阻抗之透光度及於經摻雜半導體晶圓之電流產生。
若該相轉換阻抗可固化，則其可包括一種或多種交聯劑。該交聯劑包括單官能基單體及寡聚物、雙官能基單體及寡聚物以及三官能基單體及寡聚物。所述交聯劑包含於該相轉換阻抗中之用量為20重量%至80重量%，或30重量%至70重量%。
交聯劑之實施例包括甲基丙烯酸烯丙酯、二甲基丙烯酸乙二醇酯、二甲基丙烯酸二乙二醇酯、二甲基丙烯酸三乙二醇酯、二甲基丙烯酸聚乙二醇酯、二甲基丙烯酸1,3-丁二醇酯、二甲基丙烯酸1,6-己二醇酯、二甲基丙烯酸新戊二醇酯、二甲基丙烯酸聚丙二醇酯、2-羥基-1,3-二甲基丙醯氧基丙烷、二丙烯酸乙二醇酯、二丙烯二乙二醇酸酯、二丙烯酸三乙二醇酯、二丙烯酸聚乙二醇酯、二丙烯酸1,3-丁二醇酯、二丙烯酸1,6-己二醇酯、二丙烯酸新戊二醇酯、二丙烯酸聚丙二醇酯、丙烯酸異癸醇酯、二丙烯酸異癸醇酯、丙烯酸十八酯、甲基丙烯酸十八酯、二丙烯酸三丙二醇酯、丙氧基化二丙烯酸新戊二醇酯、三羥甲基丙烷三丙烯酸酯、三羥甲基丙烷三甲基丙烯酸酯、四羥甲基甲烷三丙烯酸酯、四甲基甲烷四丙烯酸酯、聚酯二丙烯酸酯及聚酯二甲基丙烯酸酯。
可包含於相轉換阻抗之光引發劑包括，但不限於安息香醚、二苯甲酮、噻噸酮(thioxanthone)、縮酮及苯乙酮。光引發劑之用量為1重量%至15重量%，或5重量%至10重量%。
光引發劑之實施例包括安息香異丙醚、安息香異丁醚、苯甲酮、米氏酮(Michler’s ketone)、氯噻噸酮、2-異丙基噻噸酮、十二烷基噻噸酮、苄基二甲基縮酮(benzyl dimethyl ketal)、二乙醇縮苯乙酮、1-羥基-環己基-苯基-酮及2-羥基-2-甲基苯基丙酮。
該相轉換阻抗除了作為蝕刻劑阻抗外，還作為鍍覆阻抗，以阻止背景鍍覆。該相轉換阻抗於介電層上呈液體或半固體，如凝膠沉積。典型地，該相轉換阻抗於70℃至120℃沉積。若該相轉換阻抗呈液體沉積，其於介電層上充分冷卻以形成半固體、凝膠或固體之蝕刻及鍍覆阻抗。該相轉換阻抗密封住於介電層之針孔、裂縫及瑕疵，因此抑制介電層上任何非所欲背景鍍覆。再者，金屬不會沉積於該阻抗上，因此該阻抗作為阻障。此外，由於金屬鍍覆為等向性並且該金屬鍍覆的厚度通常大於介電層的厚度，因此該相轉換阻抗作用來抑制金屬的側邊生長，而減少因鍍覆金屬所致之任何非所欲光陰影。這防止了因金屬生長所引起之經摻雜半導體層的入射光的損失。沉積於介電層上的相轉換阻抗厚度至少為10μm，或10μm至50μm，或15μm至30μm。
於相轉換阻抗選擇性地施加至介電層而於該介電層上形成圖案後，將介電層之未被相轉換阻抗覆蓋的部分蝕刻掉以形成溝槽，從而曝露經摻雜半導體晶圓之n摻雜發射極層。介電層之該等溝槽係對應電軌及匯流排的位置。之後於該經摻雜半導體之該經曝露n摻雜發射極層上沉積第一金屬層或金屬晶種層。所述金屬晶種層提供第二金屬層的定位點、銀或銅遷移的障礙以及用於開始第二金屬層之鍍覆均勻性之導電層。該金屬晶種層可為鎳、鈀或銀。鎳與鈀可藉由使用習知無電製程以及習知物理氣相沉積製程沉積於溝槽中。銀可藉由習知物理氣相沉積或導電膏沉積。可使用習知無電組合物以及習知銀導電膏。所述金屬晶種層的沉積厚度可為0.01μm至10μm，或0.5μm至5μm。
該金屬晶種層可視需要地燒結以形成金屬矽化物，諸如鎳、鈀或銀之矽化物。燒結可於300℃至800℃下進行。在燒結之前該相轉換阻抗可從經摻雜半導體晶圓中剝除。或者，該具有阻抗之晶圓可置於燒結爐中，而於燒結製程過程中將該阻抗從晶圓上燒掉。燒結之後，將該晶圓冷卻至室溫並將該相轉換阻抗選擇性地再施加至晶圓。
第二金屬層藉由同時使用光及外電流之光引發鍍覆沉積於金屬晶種層上。該光可為連續的或為脈沖。將該具有相轉換阻抗之經摻雜半導體浸入金屬鍍覆組合物並將光施加於經摻雜半導體。所施加的電勢可具有寬範圍之電流密度。典型的電流密度為0.1A/dm2
至10A/dm2
，更典型的為0.1A/dm2
至5A/dm2
。特定的電流密度取決於經摻雜半導體晶圓的特定尺寸。若晶圓的正面受照射並且外部電勢減少至50毫安培或更小，則鍍覆於正表面正常連續進行但是晶圓的背面不發生鍍覆。正面照射改進了背面鍍覆的均勻性並克服了所有與從晶種層至遠離電接觸的點之電阻電壓降相關的問題。該鍍覆製程可視需要地包括一個或多個反向鍍覆步驟，如脈沖周期反向鍍覆製程。第二金屬層的厚度為5μm至50μm，或10μm至30μm，或15μm至25μm。
可用於第二金屬層之金屬鍍覆製程之光包括，但不限於可見光、紅外光、紫外光及X射線。光源包括，但不限於白熾燈、紅外燈、螢光燈、鹵素燈及鐳射。施加於半導體的光的量為500lx至20,000lx，或1000lx至15,000lx或5000lx至10,000lx。
金屬層可為任何適當的導電金屬。通常該金屬為銀或銅。可使用的金屬組合物包括無電組合物、浸入組合物或電解組合物。該無電金屬鍍覆組合物可包括或不包括還原劑。商業上可獲得的無電銀組合物之實例包括SilveronTM
Ag100及Silver GloTM
3k。商業上可獲得的無電銅組合物之實例包括CupositTM
328L、CircupositTM
880、3361-1、253、3350、4500、3350-1及4750。商業上有用的銀電鍍浴之實例為ENLIGHTTM
600銀盤。所有上述組合物及電鍍浴皆提供自Rohm and Haas Electronic Materials,LLC,Marlborough,MA,U.S.A。
將該具有相轉換阻抗之圖案化之經摻雜半導體晶圓浸沒於包含於鍍覆池之鍍覆組合物中。將光源定位以用光能照射半導體晶圓。由於該相轉換阻抗的透光度為30%或更大，因此有足夠的光穿過相轉換阻抗從而發生金屬鍍覆。若該圖案化之經摻雜半導體晶圓為矽太陽能電池，則光源可為例如提供與太陽光譜相似之能量的石英鹵素燈，該矽太陽能電池係光敏性。可使用多種其他光源，例如，但不限於白熾燈(如250瓦特燈)、汞燈、螢光燈管及發射光二極體(LEDs)。該光能量可為連續的或為脈沖。脈沖照射可藉由例如以機械斬波器間斷光而實現。
該鍍覆槽之材料對鍍覆組合物具有化學惰性並對光能量透明。或者，該經摻雜半導體晶圓可水平地放置於鍍覆池中並從鍍覆組合物的上面或下面照射，該情況下鍍覆槽不必為透明的。
藉由以光能照射該經摻雜半導體晶圓之正面，於正面上除了塗覆有相轉換阻抗組合物之外之部分發生鍍覆。入射光能於該太陽能電池中產生電流。因為產生的電流與入射強度成正比，於該經摻雜半導體晶圓之正面鍍覆之速度係為入射至該晶圓上之輻射強度之函數。於正面之鍍覆速度可藉由調節光的強度或藉由將背面電勢施加於該金屬化背面而加以控制。
當第二金屬層為銅時，可視需要地沉積銀或錫之底鍍層(strike layer)。可使用習知方法及鍍覆浴沉積該底鍍層。該底鍍層保護銅不被氧化。該底鍍層之厚度為習知的。該厚度可為0.01μm至0.5μm。
於鍍覆浴之金屬離子可藉由使用任何適當的可溶於溶液的金屬化合物(典型的為金屬鹽)而提供。該金屬化合物可包括，但不限於：金屬鹵化物；金屬硝酸鹽；金屬羧酸鹽，如乙酸鹽、金屬甲酸鹽及金屬葡萄糖酸鹽；金屬-胺基酸錯合物，如金屬-半胱胺酸錯合物；金屬烷基磺酸鹽，如金屬甲烷磺酸鹽及金屬乙烷磺酸鹽；金屬烷醇磺酸鹽(metal alkylol sulfonate)；金屬甲苯磺酸鹽，及金屬酚磺酸鹽；及金屬氰化物。金屬化合物之實例包括，但不限於銀、銅及錫化合物。銀化合物包括，但不限於硝酸銀、銀-半胱胺酸錯合物、甲烷磺酸銀、乙烷磺酸銀、丙烷磺酸銀、酚磺酸銀及乙酸銀。當該金屬為銀時，則金屬鹽典型不為銀鹵化物，這是因為這類鹽的溶解度有限。銅化合物包括，但不限於焦磷酸銅、葡萄糖酸銅、硫酸銅及氯化銅。錫化合物包括，但不限於錫鹵化物及烷基磺酸錫。金屬化合物之混合物可用於本發明之鍍覆浴中。該混合物可為含有相同金屬但為不同化合物之金屬化合物，諸如硫酸銅與氯化銅之混合物，或硝酸銀與銀-半胱胺酸錯合物；或含有不同金屬之金屬化合物之混合物，如銀-半胱胺酸錯合物與葡萄糖酸銅之混合物。當含有不同金屬之不同金屬化合物為混合物使用時，本發明金屬鍍覆浴沉積含有不同金屬之合金。
金屬化合物的量足以使於鍍覆組合物之金屬離子濃度達到0.1至150g/L，更典型為0.5至100g/L，又更典型的為1至70g/L。當金屬離子為銀離子時，鍍覆浴中銀離子的濃度典型為2至40g/L。所述金屬化合物商業上可獲得的來源有多種，如Aldrich chemical company、Milwaukee、Wisconsin。
當該金屬鍍覆組合物為電鍍組合物時，其包括電解質。可將廣泛種類電解質中之任一種使用於金屬鍍覆組合物中，包括酸及鹼。電解質之實例包括，但不限於烷基磺酸，如甲烷磺酸、乙烷磺酸及丙烷磺酸；烷醇磺酸；芳基磺酸，如甲苯磺酸、苯磺酸及酚磺酸；含胺基磺酸，如醯胺基磺酸(amido sulfonic acid)；磺胺酸；礦酸；羧酸，如甲酸及鹵化乙酸；鹵化氫酸(hydrogen halide acid)；及焦磷酸鹽。酸式鹽及鹼式鹽亦可用作電解質。再者，該電解質也可含有酸之混合物、鹼之混合物或一種或多種酸與一種或多種鹼之混合物。所述電解質商業上可獲得的來源有多種，如Aldrich chemical company。
不欲受限於任何理論的情況下，當該金屬組合物包括銀時，咸信於鍍覆組合物之含硝基化合物具有安定及錯合該鍍覆浴之功能。可使用廣泛種類水溶性含硝基化合物中之任何一種。該含硝基化合物包括，但不限於含硝基羧酸及其鹽以及含硝基磺酸及其鹽。該含硝基化合物可含有一個或多個硝基。該水溶性含硝基化合物典型含有至少一個雜環基。於本發明之又一具體方式中，該含硝基化合物為芳香系雜環化合物。含硝基化合物之實例包括，但不限於2-硝基苯二甲酸、3-硝基苯二甲酸、4-硝基苯二甲酸及/或間-硝基苯磺酸。典型地，該含硝基化合物於鍍覆浴的用量為0.1至200g/L，更典型為0.5至175g/L，又更典型為1至150g/L。所述含硝基化合物商業上可獲得的來源有多種，如Aldrich chemical company。
可將多種表面活性劑用於該鍍覆組合物中。可使用任何一種陰離子、陽離子、兩性及非離子表面活性劑。非離子表面活性劑之實例包括琥珀酸的酯。界面活性劑可選自陽離子性或兩性界面活性劑。陽離子表面活性劑之實例包括，但不限於可獲得自Degussa商標為TEGOTAINTM
的氯化1,3-二癸基-2-甲基咪唑鎓(1,3-didecyl-2-methylimidazolium chloride)。表面活性劑可為兩性的，如可獲得自Degussa商標為TEGOTAINTM
的烷基甜菜鹼。可使用表面活性劑的混合物。該表面活性劑於鍍覆組合物之濃度通常為0.1至5g/L。
視需要地，當該鍍覆組合物包括銀時，其可包括維生素。該維生素可為脂溶性的或水溶性的。典型使用水溶性維生素。適當的脂溶性維生素包括A、D1
、D2
、D3
、K1
、K2
及E。適當的水溶性維生素包括C、B1
、B2
、B3
、B6
及B12
。維生素之實例包括，但不限於維生素A、固醇、膽鈣化醇、維生素D3
、維生素K2
(multiprenylmenaquinone)、α-維生素E、β-維生素E、維生素C、維生素B1
、菸鹼酸、核黃素、維生素B5
、生物素、維生素B6
、維生素M及維生素B12
。通常使用的維生素為維生素C、維生素B1
、菸鹼酸、核黃素、維生素B5
、生物素、維生素B6
及維生素M。本發明所使用的術語“維生素”意欲包括維生素的鹽。
通常而言，當將維生素添加至組合物時，於鍍覆組合物之維生素之用量為0.01至150g/L，通常為0.5至100g/L，更常見的為1至100g/L。所述維生素商業上可獲得的來源有多種，如Aldrich chemical company。
可使用多種醯胺基化合物。適當的醯胺基化合物包括，但不限於磺酸醯胺(如琥珀磺醯胺)及羧酸醯胺(如琥珀酸醯胺(琥珀醯胺酸))。
通常而言，當使用醯胺基化合物時，其於鍍覆組合物中的用量為0.01至150g/L，典型為0.5至100g/L，更典型為1至100g/L。所述醯胺基化合物商業上可獲得的來源有多種，如Aldrich chemical company。另外，醯胺基化合物可自醯亞胺(如琥珀醯亞胺)原位獲得。本發明不預受限於理論，於浴溫添加至鹼性浴之醯亞胺轉化成其相應的醯胺基化合物。咸信該轉化係藉由氫氧離子(OH-
)親核進攻醯亞胺之碳-氮鍵(C-N)而發生。
胺基酸亦可用於鍍覆組合物中，其包括胺基酸衍生物及胺基酸的鹽。該胺基酸除了含有一個或多個胺基外還可含有一個或多個巰基。適當的胺基酸之實例包括，但不限於胺基乙酸、丙胺酸、半胱胺酸、蛋胺酸及4-胺基菸鹼酸。當胺基酸用於鍍覆浴時，其用量為0.1至150g/L，更典型為0.5至150g/L，又更典型為0.5至125g/L。可使用胺基酸的混合物。該胺基化合物商業上可獲得的來源通常有多種，如Aldrich chemical company。當該金屬為銀時，水溶性胺基酸化合物通常多於化學計算量的銀。
可將多種水溶性磺酸用於鍍覆組合物中。磺酸之實例包括前述電解質中所描述磺酸之任一種。當磺酸用作電解質使用時，不需加入額外的磺酸。典型地，該磺酸的用量為0.1至200g/L。
視需要地，該鍍覆組合物可含有一種或多種額外的組份。該額外的組份包括，但不限於增白劑、晶粒細化劑、延展性增強劑、防銹劑及防凍劑。含碸化合物可用作增白劑。更具體來說，適當的含碸化合物於碸基上含有一個或兩個芳香環。該芳香環可視需要地經一個或多個選自硝基、胺基、鹵素、烷基及金屬之取代基取代。當使用含碸化合物時，其用量典型為鍍覆組合物之0.001至5g/L。
視需要地，可將多種防銹劑用於鍍覆組合物中。適當的防銹劑包括，但不限於三唑、苯并三唑、四唑、咪唑、苯并咪唑及吲哚。該防銹劑通常為(C1
-C16
)烷基咪唑及芳基咪唑。典型地，防銹劑之實例包括，但不限於甲基咪唑、乙基咪唑、丙基咪唑、己基咪唑、癸基咪唑、十一基咪唑、1-苯基咪唑、4-苯基咪唑、羥基苯并三唑、胺基苯并三唑、2-咪唑甲醛、苯并三唑甲酸、2-胍基苯并咪唑、2-胺基吲唑、氯代苯并三唑、羥乙基苯并三唑、羥乙基咪唑、羥基苯并咪唑及1,2,4-三唑。防銹劑之混合物亦可用於鍍覆浴中。通常而言，當使用防銹劑時，其用量為0.005至50g/L。
當該金屬鍍覆組合物為無電金屬組合物或浸入金屬組合物時，可包含還原劑。本領域熟知多種用於此種金屬鍍覆組合物之還原劑。該還原劑包括，但不限於次磷酸鈉、次磷酸鈉、次磷酸鉀、硫脲及硫脲衍生物、乙內醯脲及乙內醯脲衍生物、對苯二酚及對苯二酚衍生物、間苯二酚以及甲醛及甲醛衍生物。該還原劑之用量可為0.1g/L至40g/L，或1g/L至25g/L，或10g/L至20g/L。
該金屬鍍覆組合物可視需要地含有緩衝劑。緩衝劑之實例包括，但不限於硼酸鹽緩衝劑(如硼砂)、磷酸鹽緩衝劑、檸檬酸鹽緩衝劑、碳酸鹽緩衝劑及氫氧化物緩衝劑。該緩衝劑之用量足以將該鍍覆組合物之pH保持在所期望的水平，該用量為本領域所廣泛熟知。
可將合金視需要地添加至該鍍覆組合物中。可使用任何適當的合金。該合金為本領域所廣泛熟知。
金屬鍍覆組合物之pH範圍可為1至14，典型為1至12，更典型為1至10。金屬鍍覆過程中該鍍覆組合物之工作溫度為10至100℃，或20至60℃。當該鍍覆組合物包括銀時，工作溫度典型為10至20℃，更典型為15至20℃。典型使用冷卻裝置保持該鍍覆組合物的溫度低於室溫。
在沉積第二金屬層及任何底鍍層之後並在燒結金屬之前，將相轉換阻抗自介電層剝離。該相轉換阻抗可由任何適當的剝離組合物剝離。該剝離劑包括，但不限於鹼基剝離劑，如氫氧化鈉、氫氧化鉀、單乙醇胺、膽鹼、四甲基氫氧化銨或其混合物。另外，該相轉換阻抗可藉由熱剝離而去除。熱剝離可於40℃至50℃之溫度進行。
可將一層或多層額外的金屬層沉積於該第二金屬層上以起加強作用。該額外的金屬層可為鎳、銅、銀或錫。錫或鎳之混合物可自包括氯化亞錫、氯化鎳、氫氧化銨及氟化銨之水浴鍍覆而來。已發現該錫鎳混合物可作為覆蓋金屬層之環境惰性帽蓋。此外，當最後金屬層為銅時，銀或錫之底鍍塗覆可沉積於該銅上以抑制銅的氧化。該額外的金屬層可藉由無電電鍍、浸入電鍍、電解電鍍、光輔助電鍍或藉由使用習知鍍覆浴之光引發金屬鍍覆而沉積。典型地，該加強金屬層厚度為1μm至10μm。銀或錫之底鍍鍍覆厚度可為0.01μm至0.5μm。
當藉由電解電鍍沉積該一層或多層額外的金屬層時，所施加的電勢可具有寬廣範圍的電流密度。電流密度通常為0.1A/dm2
至20A/dm2
，更典型為1A/dm2
至10A/dm2
。特定的電流要求取決於所用晶圓的特定尺寸。所使用的電鍍製程為習知的。
該相轉換阻抗對放射能的透光度為30%或更大，以於經摻雜半導體晶圓上進行金屬鍍覆。同時，該相轉換阻抗作為鍍覆阻抗以抑制於介電層上之任何背景鍍覆，從而將金屬鍍覆限制於經摻雜半導體之選擇性所欲鍍覆部分。由於該金屬鍍覆製程具有等向性並且該金屬鍍覆的厚度通常大於介電層的厚度，因此該阻抗抑制金屬的側邊生長並減少經鍍覆金屬所致之任何不需要的光陰影。這防止了經摻雜半導體層上由金屬生長所引起的入射光的損失。此外，該相轉換阻抗作為蝕刻阻抗並可與多種用於平版印刷製程之習知酸及緩衝氧化物蝕刻劑相容。
以下實施例用以說明本發明之多個方面，但並非意欲限制本發明之範圍。
提供具有pn接面之經摻雜單晶矽晶圓。對該經摻雜單晶矽晶圓之正面或發射極層進行紋理化及n++摻雜。背面為摻雜鋁之p++。介於n++摻雜發射極層與p++摻雜背面之間之區域為n+摻雜。該經摻雜單晶矽晶圓之正面塗覆厚度為500nm的Si3
N4
層。該Si3
N4
係介電質，其作為抗反射層。
包括20重量%6100聚醯胺樹脂、40重量%甲基丙烯酸異癸酯、35重量%丙氧基化二甲基丙烯酸新戊二醇酯及5重量%光引發劑包裝件(包括1-羥基環己基苯基-酮及2-異丙基噻噸酮)之相轉換阻抗係藉由習知噴墨設備(獲得自Schmid)於100℃選擇性沉積，以塗覆介電層，從而形成圖案，該圖案勾勒出導電電軌之輪廓。沉積相轉換阻抗使得每條電軌之間的距離為2mm。塗覆於介電層上之相轉換阻抗厚度為10μm。之後，該相轉換阻抗藉由輻生紫外光(fusion UV)帶系統(自400至1600mJ/cm2
)固化。預期該阻抗組合物於300nm及更長之波長範圍的透光度大於91%。
之後，於25℃以40%氫氟酸蝕刻該經摻雜半導體晶圓2至10分鐘，以蝕刻掉未被相轉換阻抗覆蓋之Si3
N4
介電質部分，從而曝露n++摻雜發射極層。在蝕刻過程中，該晶圓之鋁背面藉由與施加於正面相同的相轉換阻抗保護而使其免受酸蝕刻。藉由蝕刻於發射極層所形成的電軌寬度為20μm，深度為0.9μm。預期該酸蝕刻不會蝕刻掉該相轉換阻抗。自酸蝕刻移除晶圓並以去離子水沖洗。
厚度為0.5μm之鎳晶種層藉由將經摻雜半導體晶圓浸入具有下列表格所示之配方之無電鎳鍍覆浴而於電軌中沉積。
之後藉由光引發鍍覆，使用具有下表所揭示之組份之水性電鍍組合物於電軌上鍍覆銀層。
提供含有表2之銀鍍覆浴之鍍覆池並裝備有250瓦特燈及銀陽極。將圖案化晶圓浸入該鍍覆浴中。與輻射一起施加1至5A/dm2
電流密度。直至厚度為10μm之銀之電沉積層於鎳晶種層上獲得後停止鍍覆。預期於Si3
N4
層上沒有銀之背景鍍覆。
該相轉換阻抗以3.5%氫氧化鈉自Si3
N4
介電層剝離。之後將該晶圓於600℃之習知爐中點火。
提供具有pn接面之經摻雜單晶矽晶圓。對該經摻雜單晶矽晶圓之正面或發射極層進行紋理化及n++摻雜。背面為摻雜鋁之p++。介於n++摻雜發射極層與p++摻雜背面之間之區域為n+摻雜。該經摻雜單晶矽晶圓之正面塗覆厚度為500nm的Si3
N4
層。該Si3
N4
係介電質，其作為抗反射層。
之後於介電層上形成電軌之圖案。包括20重量%C75V聚醯胺蠟、40重量%甲基丙烯酸異癸酯、35重量%二甲基丙烯酸三丙二醇酯及5重量%光引發劑包裝件(包括1-羥基環己基苯基-酮及2-異丙基噻噸酮)之相轉換阻抗藉由習知網印製程及設備選擇性沉積以塗覆介電層，從而形成導電電軌之圖案。沉積相轉換阻抗使得每條電軌之間的距離為5mm。塗覆於介電層上之相轉換阻抗厚度為10μm。之後，該相轉換阻抗藉由生紫外光帶系統(自400至1600mJ/cm2
)固化。預期該阻抗組合物於300nm及更長之波長範圍的透光度大於91%。
之後，將該經摻雜多晶矽晶圓浸入40%氫氟酸於25℃蝕刻2至10分鐘，以蝕刻掉未被相轉換阻抗覆蓋之Si3
N4
介電質部分，從而曝露n++摻雜發射極層。該晶圓之鋁背面藉由與施加於正面相同的相轉換阻抗保護而使其免受酸蝕刻。藉由蝕刻於發射極層所形成的電軌寬度為20μm，深度為0.9μm。預期該氫氟酸蝕刻不會蝕刻掉該相轉換阻抗。藉由酸蝕刻移除晶圓並以去離子水沖洗。使用PalladepTM
BP自催化製程(獲得自Rohm and Haas Electronic Materials,LLC,Marlborough,MA)於電軌中沉積厚度為0.1μm之鈀金屬晶種層。
之後使用Copper GleamTM
Cu-脈衝銅鍍鍍覆浴(獲得自Rohm and Haas Electronic Materials,LLC)藉由以銅進行光引發鍍覆而於該電軌之鈀晶種層上鍍覆銅。光源為250瓦特燈並且電流密度為1至5安培/dm2
。直至厚度為10μm之銅之電沉積層於鈀晶種層上獲得後停止鍍覆。預期於Si3
N4
層上沒有銅之背景鍍覆。
於銅上沉積錫之底鍍層以保護銅不被氧化。用250瓦特燈作為光源。錫鍍覆的電流密度為1至5安培/dm2
。該底鍍層之厚度為0.1μm。
之後，該相轉換阻抗以0.5%氫氧化鉀自Si3
N4
介電層剝離。該阻抗自介電層剝離之後，將該晶圓於700℃之習知爐中點火。
提供具有pn接面之經摻雜單晶矽晶圓。對該經摻雜單晶矽晶圓之正面或發射極層進行紋理化及n++摻雜。背面為摻雜鋁之p++。介於n++摻雜發射極層與p++摻雜背面之間之區域為n+摻雜。該經摻雜單晶矽晶圓之正面塗覆厚度為500nm的Si3
N4
層。該Si3
N4
係介電質，其作為抗反射層。之後於介電層上形成電軌之圖案。包括10重量%聚醯胺樹脂、10重量%石蠟、40重量%丙烯酸十八酯、35重量%二丙烯酸1,6-己二醇酯及5重量%光引發劑包裝件(包括1-羥基環己基苯基-酮及2-異丙基噻噸酮)之相轉換阻抗藉由習知Optomec噴霧噴射沉積系統(獲得自)於80℃選擇性沉積以塗覆介電層，從而形成電軌之圖案。沉積相轉換阻抗使得每條電軌之間的距離為3mm。塗覆於介電層上之相轉換阻抗厚度為10μm。之後，該相轉換阻抗藉由合輻升外線帶系統(自400至1600mJ/cm2
)固化。預期該相轉換阻抗組合物於300nm及更長之波長範圍的透光度大於91%。
之後，將未被該阻抗塗覆之Si3
N4
介電層蝕刻掉，以曝露n++摻雜發射極層部分。以40%氫氟酸於25℃蝕刻2至10分鐘，以於發射極層形成寬度為20μm，深度為0.5μm之電軌。該酸蝕刻不預期會蝕刻掉該相轉換阻抗。該晶圓之鋁背面亦藉由與施加於晶圓正面的相同的相轉換阻抗保護而使其免受酸蝕刻。以無電鎳鍍覆該電軌以形成厚度為0.1μm之鎳金屬晶種層。使用NiplateTM
600中-磷(mid-phosphorus)無電鎳浴沉積鎳(獲得自Rohm and Haas Electronic Materials,LLC)。
之後於鎳晶種層上塗覆厚度為10μm之銀層。使用EnlightTM
600銀鍍覆浴藉由光引發鍍覆沉積銀。該鍍覆浴之pH保持在9至12。鍍覆浴之溫度保持在25至35℃。提供含有銀鍍覆浴並裝備有250瓦特燈及銀陽極之鍍覆池。將晶圓浸入該鍍覆浴中。與輻射一起施加1至5A/dm2
電流密度。直至達到銀之所需厚度才停止鍍覆。預期介電層上沒有銀之背景鍍覆。
該相轉換阻抗藉由熱剝離自Si3
N4
介電層剝離。熱剝離於50℃之習知爐中進行。之後將金屬化晶圓於800℃之習知爐中點火。
Claims (10)
- 一種方法，包括：a)提供包括n摻雜正面及p摻雜背面之經摻雜半導體，及覆蓋該經摻雜半導體之該n摻雜正面之介電層；b)於該介電層上選擇性沉積透光度為30%或更大之相轉換阻抗以於該介電層上形成圖案；c)蝕刻掉該介電層未被該相轉換阻抗覆蓋之部分以曝露該經摻雜半導體之該n摻雜正面之部分；d)於該經摻雜半導體之該n摻雜正面之該曝露部分沉積上金屬晶種層；以及e)藉由光引發鍍覆於該金屬晶種層上沉積金屬層。
- 如申請專利範圍第1項之方法，其中該相轉換阻抗包括一種或多種蠟。
- 如申請專利範圍第1項之方法，其中該相轉換阻抗包括一種或多種聚醯胺樹脂。
- 如申請專利範圍第1項之方法，其中蝕刻以酸或緩衝氧化物完成。
- 如申請專利範圍第1項之方法，其中該相轉換阻抗藉由噴墨、噴霧、網印或平版印刷而選擇性地沉積。
- 如申請專利範圍第1項之方法，其中該金屬晶種層為鎳、鈀或銀。
- 如申請專利範圍第1項之方法，其中該金屬層為銅或銀。
- 如申請專利範圍第1項之方法，其進一步包括固化該相轉換阻抗之步驟。
- 如申請專利範圍第1項之方法，其進一步包括剝離該相轉換阻抗之步驟。
- 如申請專利範圍第1項之方法，其中該相轉換阻抗呈液體、半固體或凝膠而沉積。
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US13747708P | 2008-07-31 | 2008-07-31 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| TW201016899A TW201016899A (en) | 2010-05-01 |
| TWI403621B true TWI403621B (zh) | 2013-08-01 |
Family
ID=41328612
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW098125162A TWI403621B (zh) | 2008-07-31 | 2009-07-27 | 抑制背景鍍覆 |
Country Status (6)
| Country | Link |
|---|---|
| US (1) | US9206520B2 (zh) |
| EP (1) | EP2157209B1 (zh) |
| JP (1) | JP5173956B2 (zh) |
| KR (1) | KR101567783B1 (zh) |
| CN (1) | CN101667606B (zh) |
| TW (1) | TWI403621B (zh) |
Families Citing this family (39)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20110253545A1 (en) * | 2010-04-19 | 2011-10-20 | International Business Machines Corporation | Method of direct electrodeposition on semiconductors |
| SG179379A1 (en) | 2010-09-21 | 2012-04-27 | Rohm & Haas Elect Mat | Improved method of stripping hot melt etch resists from semiconductors |
| EP2431502B1 (en) * | 2010-09-21 | 2017-05-24 | Rohm and Haas Electronic Materials LLC | Cyanide-free silver electroplating solutions |
| EP2463410B1 (en) * | 2010-12-13 | 2018-07-04 | Rohm and Haas Electronic Materials LLC | Electrochemical etching of semiconductors |
| KR101113068B1 (ko) | 2010-12-30 | 2012-02-15 | (주)지오데코 | 광 유도 플레이팅을 이용한 태양전지 전극 형성방법 |
| DE102011010306A1 (de) * | 2011-02-03 | 2012-08-09 | Rena Gmbh | Verfahren zur Herstellung einer kristallinen Siliziumsolarzelle unter Vermeidung unerwünschter Metallabscheidungen |
| CN102168290B (zh) * | 2011-04-08 | 2012-10-17 | 哈尔滨工业大学 | 无氰镀银电镀液及其制备方法和电镀方法 |
| JP5996244B2 (ja) * | 2011-04-19 | 2016-09-21 | ローム アンド ハース エレクトロニック マテリアルズ エルエルシーＲｏｈｍ ａｎｄ Ｈａａｓ Ｅｌｅｃｔｒｏｎｉｃ Ｍａｔｅｒｉａｌｓ ＬＬＣ | 半導体上の銅のめっき |
| US8969122B2 (en) | 2011-06-14 | 2015-03-03 | International Business Machines Corporation | Processes for uniform metal semiconductor alloy formation for front side contact metallization and photovoltaic device formed therefrom |
| DE102011051707A1 (de) * | 2011-07-08 | 2013-01-10 | Schott Solar Ag | Verfahren zum Herstellen einer Solarzelle |
| KR101449942B1 (ko) * | 2012-01-17 | 2014-10-17 | 주식회사 호진플라텍 | 전기도금 및 광 유도 도금을 병행하는 태양전지 기판용 도금장치 및 도금 방법 |
| US20130264214A1 (en) * | 2012-04-04 | 2013-10-10 | Rohm And Haas Electronic Materials Llc | Metal plating for ph sensitive applications |
| JP5472950B2 (ja) * | 2012-06-19 | 2014-04-16 | Ｊｅインターナショナル株式会社 | マスキング剤および表面処理基材の製造方法 |
| US20140008234A1 (en) * | 2012-07-09 | 2014-01-09 | Rohm And Haas Electronic Materials Llc | Method of metal plating semiconductors |
| ES2573137T3 (es) * | 2012-09-14 | 2016-06-06 | Atotech Deutschland Gmbh | Método de metalización de sustratos de célula solar |
| US9379258B2 (en) | 2012-11-05 | 2016-06-28 | Solexel, Inc. | Fabrication methods for monolithically isled back contact back junction solar cells |
| WO2014137283A1 (en) * | 2013-03-05 | 2014-09-12 | Trina Solar Energy Development Pte Ltd | Method of fabricating a solar cell |
| CN103397355A (zh) * | 2013-07-19 | 2013-11-20 | 哈尔滨工业大学 | 可用于高速电镀的无氰电镀银镀液及电镀工艺 |
| US9312042B2 (en) * | 2013-09-27 | 2016-04-12 | Sunpower Corporation | Metal seed layer for solar cell conductive contact |
| US9622353B2 (en) | 2014-05-31 | 2017-04-11 | Rohm And Haas Electronic Materials Llc | Imaging on substrates with alkaline strippable UV blocking compositions and aqueous soluble UV transparent films |
| EP2950144B1 (en) | 2014-05-31 | 2016-12-14 | Rohm and Haas Electronic Materials LLC | Imaging process on substrates with aqueous alkaline soluble uv blocking compositions and aqueous soluble uv transparent films |
| US9960302B1 (en) | 2016-10-18 | 2018-05-01 | Tesla, Inc. | Cascaded photovoltaic structures with interdigitated back contacts |
| US10937915B2 (en) | 2016-10-28 | 2021-03-02 | Tesla, Inc. | Obscuring, color matching, and camouflaging solar panels |
| US10381973B2 (en) | 2017-05-17 | 2019-08-13 | Tesla, Inc. | Uniformly and directionally colored photovoltaic modules |
| US10985688B2 (en) | 2017-06-05 | 2021-04-20 | Tesla, Inc. | Sidelap interconnect for photovoltaic roofing modules |
| US10734938B2 (en) | 2017-07-21 | 2020-08-04 | Tesla, Inc. | Packaging for solar roof tiles |
| US10857764B2 (en) | 2017-07-25 | 2020-12-08 | Tesla, Inc. | Method for improving adhesion between glass cover and encapsulant for solar roof tiles |
| US10978990B2 (en) | 2017-09-28 | 2021-04-13 | Tesla, Inc. | Glass cover with optical-filtering coating for managing color of a solar roof tile |
| US10454409B2 (en) | 2018-02-02 | 2019-10-22 | Tesla, Inc. | Non-flat solar roof tiles |
| DE102018202513B4 (de) * | 2018-02-20 | 2023-08-17 | Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e. V. | Verfahren zur Metallisierung eines Bauelements |
| US10862420B2 (en) | 2018-02-20 | 2020-12-08 | Tesla, Inc. | Inter-tile support for solar roof tiles |
| US11190128B2 (en) | 2018-02-27 | 2021-11-30 | Tesla, Inc. | Parallel-connected solar roof tile modules |
| CN117040435A (zh) | 2018-03-01 | 2023-11-10 | 特斯拉公司 | 用于封装光伏屋顶瓦片的系统和方法 |
| US11431279B2 (en) | 2018-07-02 | 2022-08-30 | Tesla, Inc. | Solar roof tile with a uniform appearance |
| US11082005B2 (en) | 2018-07-31 | 2021-08-03 | Tesla, Inc. | External electrical contact for solar roof tiles |
| US11245354B2 (en) | 2018-07-31 | 2022-02-08 | Tesla, Inc. | Solar roof tile spacer with embedded circuitry |
| US11245355B2 (en) | 2018-09-04 | 2022-02-08 | Tesla, Inc. | Solar roof tile module |
| US11581843B2 (en) | 2018-09-14 | 2023-02-14 | Tesla, Inc. | Solar roof tile free of back encapsulant layer |
| US11431280B2 (en) | 2019-08-06 | 2022-08-30 | Tesla, Inc. | System and method for improving color appearance of solar roofs |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4251327A (en) * | 1980-01-14 | 1981-02-17 | Motorola, Inc. | Electroplating method |
| JPH09187697A (ja) * | 1996-12-02 | 1997-07-22 | Nagoya Yuka Kk | マスキング材 |
| US6310135B1 (en) * | 1995-04-18 | 2001-10-30 | Nippon Zeon Co., Ltd. | Polyimide resin composition |
| US20040038148A1 (en) * | 2000-03-29 | 2004-02-26 | Jsr Corporation | Positive type radiation-sensitive resin composition for producing product formed by plating and process for producing product formed by plating |
Family Cites Families (39)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CA1052392A (en) | 1973-12-20 | 1979-04-10 | John Blachford | Amide waxes |
| JPS55118680A (en) * | 1979-03-02 | 1980-09-11 | Motorola Inc | Electrically plating method |
| US4217183A (en) * | 1979-05-08 | 1980-08-12 | International Business Machines Corporation | Method for locally enhancing electroplating rates |
| US4349583A (en) | 1981-07-28 | 1982-09-14 | International Business Machines Corporation | Laser enhanced maskless method for plating and simultaneous plating and etching of patterns |
| US4420365A (en) | 1983-03-14 | 1983-12-13 | Fairchild Camera And Instrument Corporation | Formation of patterned film over semiconductor structure |
| JPS61179884A (ja) * | 1985-02-05 | 1986-08-12 | Mitsubishi Electric Corp | 選択的化学加工装置 |
| US4767489A (en) | 1987-03-25 | 1988-08-30 | Pc Proto, Inc. | Computer aided printer-etcher |
| US4816549A (en) | 1988-01-11 | 1989-03-28 | Union Camp Corporation | Toluene soluble polyamide resin from polymerized fatty acid and 1,2-diamino cyclohexane |
| JPH01259532A (ja) * | 1988-04-08 | 1989-10-17 | Fujitsu Ltd | 光照射めっき方法及び装置 |
| NL8802047A (nl) | 1988-08-18 | 1990-03-16 | Philips Nv | Werkwijze voor het selectief op een substraat aanbrengen van een metaal uit de vloeistoffase met behulp van een laser. |
| EP0408499A3 (en) | 1989-07-13 | 1992-08-19 | Ciba-Geigy Ag | Method of conditioning organic pigments |
| US5011565A (en) * | 1989-12-06 | 1991-04-30 | Mobil Solar Energy Corporation | Dotted contact solar cell and method of making same |
| JPH05285510A (ja) * | 1992-04-10 | 1993-11-02 | Nippon Steel Corp | 圧延用ダルロールの製造方法 |
| US5645632A (en) | 1996-02-14 | 1997-07-08 | Union Camp Corporation | Diesters of polymerized fatty acids useful in formulating hot-melt inks |
| US5783657A (en) | 1996-10-18 | 1998-07-21 | Union Camp Corporation | Ester-terminated polyamides of polymerized fatty acids useful in formulating transparent gels in low polarity liquids |
| US5981680A (en) | 1998-07-13 | 1999-11-09 | Dow Corning Corporation | Method of making siloxane-based polyamides |
| US6268466B1 (en) | 1999-01-04 | 2001-07-31 | Arizona Chemical Company | Tertiary amide terminated polyamides and uses thereof |
| US6492458B1 (en) | 2000-05-16 | 2002-12-10 | Arizona Chemical Company | Polyalkyleneoxydiamine polyamides useful for formulating inks for phase-change jet printing |
| JP2002175837A (ja) | 2000-12-06 | 2002-06-21 | Nisshinbo Ind Inc | 高分子ゲル電解質及び二次電池並びに電気二重層キャパシタ |
| US6399713B1 (en) | 2001-01-24 | 2002-06-04 | Arizona Chemical Company | Hydrocarbon-terminated polyether-polyamide block copolymers and uses thereof |
| US6870011B2 (en) | 2001-01-24 | 2005-03-22 | Arizona Chemical Company | Hydrocarbon-terminated polyether-polyamide block copolymers and uses thereof |
| US6552160B2 (en) | 2001-05-14 | 2003-04-22 | Arizona Chemical Company | Ester-terminated poly(ester-amides) useful for formulating transparent gels in low polarity fluids |
| US20030070579A1 (en) | 2001-10-01 | 2003-04-17 | Hong Le Hoa | Preformed thermoplastic pavement marking construction |
| DE60233257D1 (de) | 2001-12-13 | 2009-09-17 | Arizona Chem | Wässrige suspensionen enthaltend polyamide auf fettsäurebasis |
| US6835768B2 (en) | 2002-08-28 | 2004-12-28 | Xerox Corporation | Wax dispersions and process thereof |
| DE60231084D1 (de) | 2002-12-06 | 2009-03-19 | Alstom Technology Ltd | Verfahren zur selektiven Abscheidung einer MCrAlY-Beschichtung |
| US6956099B2 (en) | 2003-03-20 | 2005-10-18 | Arizona Chemical Company | Polyamide-polyether block copolymer |
| US7868957B2 (en) * | 2003-12-02 | 2011-01-11 | Semiconductor Energy Laboratory Co., Ltd. | Thin film transistor, display device and liquid crystal display device and method for manufacturing the same |
| US7208253B2 (en) | 2004-02-12 | 2007-04-24 | Xerox Corporation | Toner composition |
| US7229745B2 (en) | 2004-06-14 | 2007-06-12 | Bae Systems Information And Electronic Systems Integration Inc. | Lithographic semiconductor manufacturing using a multi-layered process |
| US7288469B2 (en) | 2004-12-03 | 2007-10-30 | Eastman Kodak Company | Methods and apparatuses for forming an article |
| JP2006207681A (ja) | 2005-01-27 | 2006-08-10 | Ntn Corp | 動圧発生部の形成方法 |
| US7368045B2 (en) * | 2005-01-27 | 2008-05-06 | International Business Machines Corporation | Gate stack engineering by electrochemical processing utilizing through-gate-dielectric current flow |
| CA2602220C (en) | 2005-03-29 | 2013-12-17 | Arizona Chemical Company | Compostions containing fatty acids and/or derivatives thereof and a low temperature stabilizer |
| US7341941B2 (en) | 2005-08-19 | 2008-03-11 | Texas Instruments Incorporated | Methods to facilitate etch uniformity and selectivity |
| US20080035489A1 (en) * | 2006-06-05 | 2008-02-14 | Rohm And Haas Electronic Materials Llc | Plating process |
| JP2008153301A (ja) * | 2006-12-14 | 2008-07-03 | Matsushita Electric Ind Co Ltd | 半導体装置の製造方法および半導体装置の製造装置 |
| US20090139868A1 (en) * | 2007-12-03 | 2009-06-04 | Palo Alto Research Center Incorporated | Method of Forming Conductive Lines and Similar Features |
| WO2009094570A2 (en) * | 2008-01-24 | 2009-07-30 | Applied Materials, Inc. | Plating through tunnel dielectrics for solar cell contact formation |
-
2009
- 2009-03-16 EP EP09155196.0A patent/EP2157209B1/en active Active
- 2009-07-23 JP JP2009171826A patent/JP5173956B2/ja not_active Expired - Fee Related
- 2009-07-27 TW TW098125162A patent/TWI403621B/zh not_active IP Right Cessation
- 2009-07-27 CN CN2009101733916A patent/CN101667606B/zh active Active
- 2009-07-30 KR KR1020090070057A patent/KR101567783B1/ko not_active IP Right Cessation
- 2009-07-31 US US12/462,325 patent/US9206520B2/en active Active
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4251327A (en) * | 1980-01-14 | 1981-02-17 | Motorola, Inc. | Electroplating method |
| US6310135B1 (en) * | 1995-04-18 | 2001-10-30 | Nippon Zeon Co., Ltd. | Polyimide resin composition |
| JPH09187697A (ja) * | 1996-12-02 | 1997-07-22 | Nagoya Yuka Kk | マスキング材 |
| US20040038148A1 (en) * | 2000-03-29 | 2004-02-26 | Jsr Corporation | Positive type radiation-sensitive resin composition for producing product formed by plating and process for producing product formed by plating |
Also Published As
| Publication number | Publication date |
|---|---|
| US9206520B2 (en) | 2015-12-08 |
| KR20100014158A (ko) | 2010-02-10 |
| EP2157209A2 (en) | 2010-02-24 |
| CN101667606A (zh) | 2010-03-10 |
| EP2157209A3 (en) | 2014-05-07 |
| CN101667606B (zh) | 2013-02-13 |
| JP5173956B2 (ja) | 2013-04-03 |
| KR101567783B1 (ko) | 2015-11-11 |
| US20100029077A1 (en) | 2010-02-04 |
| TW201016899A (en) | 2010-05-01 |
| JP2010070849A (ja) | 2010-04-02 |
| EP2157209B1 (en) | 2014-10-22 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| TWI403621B (zh) | 抑制背景鍍覆 | |
| JP5301115B2 (ja) | めっき方法 | |
| CN101630703B (zh) | 在半导体上进行光引发的镀覆的方法 | |
| US7955978B2 (en) | Enhanced method of forming nickel silicides | |
| TWI391535B (zh) | 抑制背景鍍覆之方法 | |
| TWI538042B (zh) | 用以改善金屬黏附之活化製程 | |
| EP2648222A1 (en) | Metal plating for pH sensitive applications |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| MM4A | Annulment or lapse of patent due to non-payment of fees |