TWI398914B - 傾斜電漿處理以強化潮濕緣部之清理 - Google Patents
傾斜電漿處理以強化潮濕緣部之清理 Download PDFInfo
- Publication number
- TWI398914B TWI398914B TW97145168A TW97145168A TWI398914B TW I398914 B TWI398914 B TW I398914B TW 97145168 A TW97145168 A TW 97145168A TW 97145168 A TW97145168 A TW 97145168A TW I398914 B TWI398914 B TW I398914B
- Authority
- TW
- Taiwan
- Prior art keywords
- substrate
- copper
- plasma
- edge portion
- inclined edge
- Prior art date
Links
- 238000009832 plasma treatment Methods 0.000 title description 11
- 239000000758 substrate Substances 0.000 claims description 221
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 201
- 239000010949 copper Substances 0.000 claims description 201
- 229910052802 copper Inorganic materials 0.000 claims description 200
- 238000000034 method Methods 0.000 claims description 90
- 239000007789 gas Substances 0.000 claims description 67
- 239000005749 Copper compound Substances 0.000 claims description 51
- 150000001880 copper compounds Chemical class 0.000 claims description 51
- 230000008569 process Effects 0.000 claims description 49
- 238000001039 wet etching Methods 0.000 claims description 32
- 239000000460 chlorine Substances 0.000 claims description 22
- 238000005530 etching Methods 0.000 claims description 22
- 230000004888 barrier function Effects 0.000 claims description 12
- KRKNYBCHXYNGOX-UHFFFAOYSA-N citric acid Chemical compound OC(=O)CC(O)(C(O)=O)CC(O)=O KRKNYBCHXYNGOX-UHFFFAOYSA-N 0.000 claims description 12
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 claims description 5
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 claims description 5
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 5
- 229910052801 chlorine Inorganic materials 0.000 claims description 5
- 239000011737 fluorine Substances 0.000 claims description 5
- 229910052731 fluorine Inorganic materials 0.000 claims description 5
- 239000001301 oxygen Substances 0.000 claims description 5
- 229910052760 oxygen Inorganic materials 0.000 claims description 5
- 238000006243 chemical reaction Methods 0.000 claims description 4
- YWYZEGXAUVWDED-UHFFFAOYSA-N triammonium citrate Chemical compound [NH4+].[NH4+].[NH4+].[O-]C(=O)CC(O)(CC([O-])=O)C([O-])=O YWYZEGXAUVWDED-UHFFFAOYSA-N 0.000 claims description 4
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 claims description 3
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 claims description 3
- 229910017604 nitric acid Inorganic materials 0.000 claims description 3
- 229910000040 hydrogen fluoride Inorganic materials 0.000 claims description 2
- 239000000243 solution Substances 0.000 description 17
- 238000007747 plating Methods 0.000 description 12
- 239000007788 liquid Substances 0.000 description 11
- -1 CuO E Chemical class 0.000 description 8
- 239000011261 inert gas Substances 0.000 description 8
- 238000009713 electroplating Methods 0.000 description 7
- MZLGASXMSKOWSE-UHFFFAOYSA-N tantalum nitride Chemical compound [Ta]#N MZLGASXMSKOWSE-UHFFFAOYSA-N 0.000 description 7
- 235000012431 wafers Nutrition 0.000 description 7
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 6
- 239000011324 bead Substances 0.000 description 6
- 238000004140 cleaning Methods 0.000 description 6
- 238000005240 physical vapour deposition Methods 0.000 description 6
- 238000005229 chemical vapour deposition Methods 0.000 description 5
- 239000012530 fluid Substances 0.000 description 5
- 239000000463 material Substances 0.000 description 5
- 230000007547 defect Effects 0.000 description 4
- 238000000151 deposition Methods 0.000 description 4
- 230000008021 deposition Effects 0.000 description 4
- 230000001939 inductive effect Effects 0.000 description 4
- 230000007246 mechanism Effects 0.000 description 4
- 239000000126 substance Substances 0.000 description 4
- QAOWNCQODCNURD-UHFFFAOYSA-N sulfuric acid group Chemical group S(O)(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 description 4
- 229910052782 aluminium Inorganic materials 0.000 description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 3
- 229910052786 argon Inorganic materials 0.000 description 3
- 239000004020 conductor Substances 0.000 description 3
- 238000011109 contamination Methods 0.000 description 3
- 238000001312 dry etching Methods 0.000 description 3
- 239000001307 helium Substances 0.000 description 3
- 229910052734 helium Inorganic materials 0.000 description 3
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 239000012159 carrier gas Substances 0.000 description 2
- 239000002131 composite material Substances 0.000 description 2
- 150000001875 compounds Chemical class 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 239000008151 electrolyte solution Substances 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 230000007717 exclusion Effects 0.000 description 2
- 238000007667 floating Methods 0.000 description 2
- 238000009413 insulation Methods 0.000 description 2
- 229910052743 krypton Inorganic materials 0.000 description 2
- DNNSSWSSYDEUBZ-UHFFFAOYSA-N krypton atom Chemical compound [Kr] DNNSSWSSYDEUBZ-UHFFFAOYSA-N 0.000 description 2
- 239000002245 particle Substances 0.000 description 2
- 229910052715 tantalum Inorganic materials 0.000 description 2
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 1
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 239000008367 deionised water Substances 0.000 description 1
- 229910021641 deionized water Inorganic materials 0.000 description 1
- 239000003989 dielectric material Substances 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 238000001035 drying Methods 0.000 description 1
- 239000003792 electrolyte Substances 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000006911 nucleation Effects 0.000 description 1
- 238000010899 nucleation Methods 0.000 description 1
- 238000001020 plasma etching Methods 0.000 description 1
- 238000009877 rendering Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 239000002195 soluble material Substances 0.000 description 1
- 239000011800 void material Substances 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
- 229910052724 xenon Inorganic materials 0.000 description 1
- FHNFHKCVQCLJFQ-UHFFFAOYSA-N xenon atom Chemical compound [Xe] FHNFHKCVQCLJFQ-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02041—Cleaning
- H01L21/02082—Cleaning product to be cleaned
- H01L21/02087—Cleaning of wafer edges
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32532—Electrodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
- H01L21/321—After treatment
- H01L21/3213—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer
- H01L21/32133—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only
- H01L21/32134—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only by liquid etching only
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67063—Apparatus for fluid treatment for etching
- H01L21/67075—Apparatus for fluid treatment for etching for wet etching
- H01L21/6708—Apparatus for fluid treatment for etching for wet etching using mainly spraying means, e.g. nozzles
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/32—Processing objects by plasma generation
- H01J2237/33—Processing objects by plasma generation characterised by the type of processing
- H01J2237/334—Etching
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Plasma & Fusion (AREA)
- Analytical Chemistry (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
- Cleaning Or Drying Semiconductors (AREA)
- Electrodes Of Semiconductors (AREA)
- ing And Chemical Polishing (AREA)
- Weting (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US98950507P | 2007-11-21 | 2007-11-21 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| TW200943404A TW200943404A (en) | 2009-10-16 |
| TWI398914B true TWI398914B (zh) | 2013-06-11 |
Family
ID=40678889
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW97145168A TWI398914B (zh) | 2007-11-21 | 2008-11-21 | 傾斜電漿處理以強化潮濕緣部之清理 |
Country Status (6)
| Country | Link |
|---|---|
| JP (1) | JP5184644B2 (ko) |
| KR (1) | KR101532456B1 (ko) |
| CN (1) | CN101868849B (ko) |
| SG (1) | SG186015A1 (ko) |
| TW (1) | TWI398914B (ko) |
| WO (1) | WO2009070216A1 (ko) |
Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101764087B (zh) * | 2010-01-21 | 2013-04-10 | 复旦大学 | 一种铜与低介电常数材料集成的方法 |
| KR101458799B1 (ko) * | 2013-10-11 | 2014-11-07 | 조인셋 주식회사 | 연성 금속 적층필름 및 그 제조방법 |
| US9748140B1 (en) * | 2016-05-13 | 2017-08-29 | Infineon Technologies Ag | Method of manufacturing semiconductor devices |
| US20200365404A1 (en) * | 2019-05-15 | 2020-11-19 | Applied Materials, Inc. | Bevel peeling and defectivity solution for substrate processing |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6589882B2 (en) * | 2001-10-24 | 2003-07-08 | Micron Technology, Inc. | Copper post-etch cleaning process |
| US6967174B1 (en) * | 1999-10-01 | 2005-11-22 | Novellus Systems, Inc. | Wafer chuck for use in edge bevel removal of copper from silicon wafers |
| US20060128152A1 (en) * | 2003-03-14 | 2006-06-15 | Lam Research Corporation | Plasma oxidation and removal of oxidized material |
| US20070068900A1 (en) * | 2005-09-27 | 2007-03-29 | Lam Research Corporation | Apparatus and methods to remove films on bevel edge and backside of wafer |
| US7256148B2 (en) * | 2005-05-12 | 2007-08-14 | International Business Machines Corporation | Method for treating a wafer edge |
Family Cites Families (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6333275B1 (en) * | 1999-10-01 | 2001-12-25 | Novellus Systems, Inc. | Etchant mixing system for edge bevel removal of copper from silicon wafers |
| JP3953265B2 (ja) * | 1999-10-06 | 2007-08-08 | 株式会社荏原製作所 | 基板洗浄方法及びその装置 |
| WO2004100247A1 (ja) * | 2003-05-12 | 2004-11-18 | Sosul Co., Ltd. | プラズマエッチングチャンバーと、これを用いたプラズマエッチングシステム |
| US7323080B2 (en) * | 2004-05-04 | 2008-01-29 | Semes Co., Ltd. | Apparatus for treating substrate |
| WO2006060752A2 (en) * | 2004-12-03 | 2006-06-08 | Solid State Equipment Corporation | Wet etching of the edge and bevel of a silicon wafer |
-
2008
- 2008-11-13 SG SG2012085171A patent/SG186015A1/en unknown
- 2008-11-13 JP JP2010534950A patent/JP5184644B2/ja active Active
- 2008-11-13 KR KR1020107013634A patent/KR101532456B1/ko active IP Right Grant
- 2008-11-13 CN CN2008801176494A patent/CN101868849B/zh active Active
- 2008-11-13 WO PCT/US2008/012842 patent/WO2009070216A1/en active Application Filing
- 2008-11-21 TW TW97145168A patent/TWI398914B/zh active
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6967174B1 (en) * | 1999-10-01 | 2005-11-22 | Novellus Systems, Inc. | Wafer chuck for use in edge bevel removal of copper from silicon wafers |
| US6589882B2 (en) * | 2001-10-24 | 2003-07-08 | Micron Technology, Inc. | Copper post-etch cleaning process |
| US20060128152A1 (en) * | 2003-03-14 | 2006-06-15 | Lam Research Corporation | Plasma oxidation and removal of oxidized material |
| US7256148B2 (en) * | 2005-05-12 | 2007-08-14 | International Business Machines Corporation | Method for treating a wafer edge |
| US20070068900A1 (en) * | 2005-09-27 | 2007-03-29 | Lam Research Corporation | Apparatus and methods to remove films on bevel edge and backside of wafer |
Also Published As
| Publication number | Publication date |
|---|---|
| JP5184644B2 (ja) | 2013-04-17 |
| SG186015A1 (en) | 2012-12-28 |
| TW200943404A (en) | 2009-10-16 |
| KR20100108345A (ko) | 2010-10-06 |
| JP2011504299A (ja) | 2011-02-03 |
| WO2009070216A1 (en) | 2009-06-04 |
| CN101868849B (zh) | 2012-03-07 |
| CN101868849A (zh) | 2010-10-20 |
| KR101532456B1 (ko) | 2015-06-29 |
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