TWI397199B - 用於製造經偏光發光二極體之封裝技術 - Google Patents

用於製造經偏光發光二極體之封裝技術 Download PDF

Info

Publication number
TWI397199B
TWI397199B TW095122314A TW95122314A TWI397199B TW I397199 B TWI397199 B TW I397199B TW 095122314 A TW095122314 A TW 095122314A TW 95122314 A TW95122314 A TW 95122314A TW I397199 B TWI397199 B TW I397199B
Authority
TW
Taiwan
Prior art keywords
led
mark
package
electrode
polarization
Prior art date
Application number
TW095122314A
Other languages
English (en)
Chinese (zh)
Other versions
TW200705723A (en
Inventor
增井久志
秀治 中村
丹巴爾斯 史蒂芬Ｐ
Original Assignee
獨立行政法人科學技術振興機構
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 獨立行政法人科學技術振興機構 filed Critical 獨立行政法人科學技術振興機構
Publication of TW200705723A publication Critical patent/TW200705723A/zh
Application granted granted Critical
Publication of TWI397199B publication Critical patent/TWI397199B/zh

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/817—Bodies characterised by the crystal structures or orientations, e.g. polycrystalline, amorphous or porous
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/8506—Containers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W46/00—Marks applied to devices, e.g. for alignment or identification
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/1335—Structural association of cells with optical devices, e.g. polarisers or reflectors
    • G02F1/1336—Illuminating devices
    • G02F1/133602—Direct backlight
    • G02F1/133603—Direct backlight with LEDs
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/1335—Structural association of cells with optical devices, e.g. polarisers or reflectors
    • G02F1/1336—Illuminating devices
    • G02F1/13362—Illuminating devices providing polarized light, e.g. by converting a polarisation component into another one
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/819—Bodies characterised by their shape, e.g. curved or truncated substrates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W46/00—Marks applied to devices, e.g. for alignment or identification
    • H10W46/301—Marks applied to devices, e.g. for alignment or identification for alignment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W46/00—Marks applied to devices, e.g. for alignment or identification
    • H10W46/601—Marks applied to devices, e.g. for alignment or identification for use after dicing
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W46/00—Marks applied to devices, e.g. for alignment or identification
    • H10W46/601—Marks applied to devices, e.g. for alignment or identification for use after dicing
    • H10W46/607—Located on parts of packages, e.g. on encapsulations or on package substrates

Landscapes

  • Led Devices (AREA)
  • Led Device Packages (AREA)
TW095122314A 2005-06-21 2006-06-21 用於製造經偏光發光二極體之封裝技術 TWI397199B (zh)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US69251405P 2005-06-21 2005-06-21

Publications (2)

Publication Number Publication Date
TW200705723A TW200705723A (en) 2007-02-01
TWI397199B true TWI397199B (zh) 2013-05-21

Family

ID=37595773

Family Applications (1)

Application Number Title Priority Date Filing Date
TW095122314A TWI397199B (zh) 2005-06-21 2006-06-21 用於製造經偏光發光二極體之封裝技術

Country Status (6)

Country Link
US (2) US7518159B2 (https=)
EP (1) EP1905088A4 (https=)
JP (1) JP5301988B2 (https=)
KR (1) KR101310332B1 (https=)
TW (1) TWI397199B (https=)
WO (1) WO2007002151A2 (https=)

Families Citing this family (41)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7842527B2 (en) * 2006-12-11 2010-11-30 The Regents Of The University Of California Metalorganic chemical vapor deposition (MOCVD) growth of high performance non-polar III-nitride optical devices
US8044417B2 (en) * 2008-02-01 2011-10-25 The Regents Of The University Of California Enhancement of optical polarization of nitride light-emitting diodes by increased indium incorporation
US20100032695A1 (en) 2008-08-05 2010-02-11 The Regents Of The University Of California Tunable white light based on polarization sensitive light-emitting diodes
WO2007002151A2 (en) * 2005-06-21 2007-01-04 The Regents Of The University Of California Packaging technique for the fabrication of polarized light emitting diodes
JP2009070893A (ja) * 2007-09-11 2009-04-02 Rohm Co Ltd 発光装置及びその製造方法
JP5263771B2 (ja) * 2007-11-12 2013-08-14 学校法人慶應義塾 面発光装置及び偏光光源
JP2009123803A (ja) * 2007-11-13 2009-06-04 Sanyo Electric Co Ltd 発光ダイオード装置
US8125579B2 (en) * 2007-12-19 2012-02-28 Texas Instruments Incorporated Polarized light emitting diode and use thereof
WO2009097611A1 (en) * 2008-02-01 2009-08-06 The Regents Of The University Of California Enhancement of optical polarization of nitride light-emitting diodes by wafer off-axis cut
US20110180781A1 (en) * 2008-06-05 2011-07-28 Soraa, Inc Highly Polarized White Light Source By Combining Blue LED on Semipolar or Nonpolar GaN with Yellow LED on Semipolar or Nonpolar GaN
JP2010027924A (ja) * 2008-07-22 2010-02-04 Sumitomo Electric Ind Ltd Ｉｉｉ族窒化物発光ダイオード
US8284810B1 (en) 2008-08-04 2012-10-09 Soraa, Inc. Solid state laser device using a selected crystal orientation in non-polar or semi-polar GaN containing materials and methods
US8247886B1 (en) * 2009-03-09 2012-08-21 Soraa, Inc. Polarization direction of optical devices using selected spatial configurations
US8299473B1 (en) 2009-04-07 2012-10-30 Soraa, Inc. Polarized white light devices using non-polar or semipolar gallium containing materials and transparent phosphors
JP4815013B2 (ja) * 2009-04-09 2011-11-16 パナソニック株式会社 窒化物系半導体発光素子、照明装置、液晶表示装置および照明装置の製造方法
US8791499B1 (en) 2009-05-27 2014-07-29 Soraa, Inc. GaN containing optical devices and method with ESD stability
CN102460739A (zh) * 2009-06-05 2012-05-16 加利福尼亚大学董事会 长波长非极性及半极性(Al,Ga,In)N基激光二极管
US9000466B1 (en) 2010-08-23 2015-04-07 Soraa, Inc. Methods and devices for light extraction from a group III-nitride volumetric LED using surface and sidewall roughening
US9293644B2 (en) 2009-09-18 2016-03-22 Soraa, Inc. Power light emitting diode and method with uniform current density operation
US8933644B2 (en) 2009-09-18 2015-01-13 Soraa, Inc. LED lamps with improved quality of light
US9583678B2 (en) 2009-09-18 2017-02-28 Soraa, Inc. High-performance LED fabrication
WO2011035265A1 (en) 2009-09-18 2011-03-24 Soraa, Inc. Power light emitting diode and method with current density operation
WO2011070770A1 (ja) 2009-12-09 2011-06-16 パナソニック株式会社 窒化物系半導体発光素子、照明装置、液晶表示装置および照明装置の製造方法
US8905588B2 (en) 2010-02-03 2014-12-09 Sorra, Inc. System and method for providing color light sources in proximity to predetermined wavelength conversion structures
US20110186874A1 (en) * 2010-02-03 2011-08-04 Soraa, Inc. White Light Apparatus and Method
US20110182056A1 (en) * 2010-06-23 2011-07-28 Soraa, Inc. Quantum Dot Wavelength Conversion for Optical Devices Using Nonpolar or Semipolar Gallium Containing Materials
US10147850B1 (en) 2010-02-03 2018-12-04 Soraa, Inc. System and method for providing color light sources in proximity to predetermined wavelength conversion structures
US8740413B1 (en) 2010-02-03 2014-06-03 Soraa, Inc. System and method for providing color light sources in proximity to predetermined wavelength conversion structures
US8293551B2 (en) 2010-06-18 2012-10-23 Soraa, Inc. Gallium and nitrogen containing triangular or diamond-shaped configuration for optical devices
US8313964B2 (en) 2010-06-18 2012-11-20 Soraa, Inc. Singulation method and resulting device of thick gallium and nitrogen containing substrates
US9450143B2 (en) 2010-06-18 2016-09-20 Soraa, Inc. Gallium and nitrogen containing triangular or diamond-shaped configuration for optical devices
US8786053B2 (en) 2011-01-24 2014-07-22 Soraa, Inc. Gallium-nitride-on-handle substrate materials and devices and method of manufacture
US8686431B2 (en) 2011-08-22 2014-04-01 Soraa, Inc. Gallium and nitrogen containing trilateral configuration for optical devices
US8912025B2 (en) 2011-11-23 2014-12-16 Soraa, Inc. Method for manufacture of bright GaN LEDs using a selective removal process
US9269876B2 (en) 2012-03-06 2016-02-23 Soraa, Inc. Light emitting diodes with low refractive index material layers to reduce light guiding effects
US8971368B1 (en) 2012-08-16 2015-03-03 Soraa Laser Diode, Inc. Laser devices having a gallium and nitrogen containing semipolar surface orientation
DE102012217967A1 (de) 2012-10-01 2014-04-03 Carl Zeiss Microscopy Gmbh Konfokales Mikroskop mit frei einstellbarer Probenabtastung
US9978904B2 (en) 2012-10-16 2018-05-22 Soraa, Inc. Indium gallium nitride light emitting devices
US8802471B1 (en) 2012-12-21 2014-08-12 Soraa, Inc. Contacts for an n-type gallium and nitrogen substrate for optical devices
US8994033B2 (en) 2013-07-09 2015-03-31 Soraa, Inc. Contacts for an n-type gallium and nitrogen substrate for optical devices
US9419189B1 (en) 2013-11-04 2016-08-16 Soraa, Inc. Small LED source with high brightness and high efficiency

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0629155A (ja) * 1992-05-12 1994-02-04 Kuraray Co Ltd 電解コンデンサー用セパレーター
US6072197A (en) * 1996-02-23 2000-06-06 Fujitsu Limited Semiconductor light emitting device with an active layer made of semiconductor having uniaxial anisotropy
US20030089899A1 (en) * 2000-08-22 2003-05-15 Lieber Charles M. Nanoscale wires and related devices

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH04291474A (ja) * 1991-03-20 1992-10-15 Tokyo Electric Co Ltd バーコードスキャナ
JPH06291155A (ja) * 1993-03-31 1994-10-18 Victor Co Of Japan Ltd ダイボンディング装置
JP3258221B2 (ja) * 1995-12-26 2002-02-18 沖電気工業株式会社 位置合わせ用の認識マークおよびその形成方法、認識マークおよび発光部の形成の兼用マスク、位置合わせ用の認識マークを用いた位置合わせ方法
JP3816176B2 (ja) * 1996-02-23 2006-08-30 富士通株式会社 半導体発光素子及び光半導体装置
JP3599917B2 (ja) * 1996-09-30 2004-12-08 三洋電機株式会社 半導体レーザ装置
JP3235571B2 (ja) * 1998-09-03 2001-12-04 日本電気株式会社 活性層と位置決めマークとの相対位置を測定する測定方法
JP4296644B2 (ja) * 1999-01-29 2009-07-15 豊田合成株式会社 発光ダイオード
US20020123163A1 (en) * 2000-04-24 2002-09-05 Takehiro Fujii Edge-emitting light-emitting semiconductor device and method of manufacture thereof
JP3722693B2 (ja) * 2000-11-28 2005-11-30 シャープ株式会社 半導体レーザ素子及びその製造方法
US7808011B2 (en) * 2004-03-19 2010-10-05 Koninklijke Philips Electronics N.V. Semiconductor light emitting devices including in-plane light emitting layers
TWI233220B (en) * 2004-06-18 2005-05-21 Chi Mei Optoelectronics Corp Light emitting diode package
WO2007002151A2 (en) * 2005-06-21 2007-01-04 The Regents Of The University Of California Packaging technique for the fabrication of polarized light emitting diodes

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0629155A (ja) * 1992-05-12 1994-02-04 Kuraray Co Ltd 電解コンデンサー用セパレーター
US6072197A (en) * 1996-02-23 2000-06-06 Fujitsu Limited Semiconductor light emitting device with an active layer made of semiconductor having uniaxial anisotropy
US20030089899A1 (en) * 2000-08-22 2003-05-15 Lieber Charles M. Nanoscale wires and related devices

Also Published As

Publication number Publication date
WO2007002151A2 (en) 2007-01-04
JP5301988B2 (ja) 2013-09-25
US7723746B2 (en) 2010-05-25
KR20080030033A (ko) 2008-04-03
US20060284206A1 (en) 2006-12-21
EP1905088A4 (en) 2012-11-21
EP1905088A2 (en) 2008-04-02
JP2008544552A (ja) 2008-12-04
US7518159B2 (en) 2009-04-14
KR101310332B1 (ko) 2013-09-23
WO2007002151A3 (en) 2007-06-28
US20090065798A1 (en) 2009-03-12
TW200705723A (en) 2007-02-01

Similar Documents

Publication Publication Date Title
TWI397199B (zh) 用於製造經偏光發光二極體之封裝技術
US8044417B2 (en) Enhancement of optical polarization of nitride light-emitting diodes by increased indium incorporation
KR101804408B1 (ko) 발광소자
US9951912B2 (en) Tunable white light based on polarization sensitive light-emitting diodes
US9105806B2 (en) Polarization direction of optical devices using selected spatial configurations
TW201833889A (zh) 來自微像素顯示器之偏振光發射及其製造方法
CN102157644B (zh) 具有垂直结构的发光二极管及其制造方法
US20130105761A1 (en) Light emitting device and method for manufacturing the same
US8278128B2 (en) Enhancement of optical polarization of nitride light-emitting diodes by wafer off-axis cut
TWI539623B (zh) 發光元件
EP2472608B1 (en) Lighting device with nitride-based semiconductor light-emitting elements, liquid crystal display device
CN1983656A (zh) 具有垂直结构的发光二极管及其制造方法
KR20050014345A (ko) SiC Buffer layer를 이용한 질화물 계열 반도체 결정 성장
JP2025008930A (ja) マイクロｌｅｄの製造方法と発光素子および表示装置
EP3152779A1 (en) Fabrication of semi-polar crystal structures
Tadatomo et al. Development of patterned sapphire substrate and the application to the growth of non-polar and semi-polar GaN for light-emitting diodes
KR20120097583A (ko) 고휘도 엘이디 용 기판 구조 및 그 기판에서의 에피택시 기반층 성장방법

Legal Events

Date Code Title Description
MM4A Annulment or lapse of patent due to non-payment of fees