TWI395275B - Chip package and method for fabricating the same - Google Patents

Abstract

A method for fabricating chip package includes providing a semiconductor chip with a bonding pad, comprising an adhesion/barrier layer, connected to a pad through an opening in a passivation layer, next adhering the semiconductor chip to a substrate using a glue material, next bonding a wire to the bonding pad and to the substrate, forming a polymer material on the substrate, covering the semiconductor chip and the wire, next forming a lead-free solder ball on the substrate, and then cutting the substrate and polymer material to form a chip package.

Description

Chip package structure and its process

The present invention relates to a structure and process thereof, and more particularly to a wafer package structure and process thereof.

Wire bonding is one of the techniques used to connect a semiconductor chip to an external circuit. The technique is to first fix the semiconductor wafer on a substrate (such as a printed circuit board) or a lead frame. Then, the thin metal wire (or wire bonding wire) is used to electrically connect the semiconductor chip to the lead of the lead frame or electrically connect the semiconductor chip to the circuit of the substrate.

Referring to FIG. 1 , a conventional Ball Grid Array (BGA) packaging technology uses a gold wire 110 to bond an aluminum cap 114 and a semiconductor chip 112 . A contact of the spherical grid array substrate 116, wherein the aluminum metal protective cover 114 is fastened to a copper pad 120 exposed by one of the openings 118a in the passivation layer 118, thus the copper pad The 120 is electrically connected to the ball grid array substrate 116 through the gold wire 110, and is electrically connected to the solder ball 122 of the ball grid array substrate 116.

However, the wire bonding technology of the conventional gold wire joint aluminum metal protective cover is easy to make the gold atom of the gold wire due to the high temperature in the subsequent assembly process and the lead-free solder ball process. The aluminum metal of the aluminum pad or the aluminum metal protective cover forms an intermetallic compound (IMC), which causes embrittlement of the structure and affects the reliability of the structure. In addition, after the productization, the gold wire and the semiconductor wafer are also prone to generate high heat under high power use, and the gold atom of the gold wire forms a metal intermetallic compound (IMC) with the aluminum metal of the aluminum pad or the aluminum metal protective cover. To cause embrittlement of the structure and affect the reliability of the structure.

It is an object of the present invention to provide a wafer package structure and process thereof that prevents gold atoms of a gold wire from forming a metal intermetallic compound (IMC) with an aluminum pad of an aluminum pad or an aluminum metal protective cover.

For the above purposes, the present invention provides a chip package structure comprising a substrate; a lead-free solder ball bonded to the substrate; an adhesive material positioned on the substrate; a semiconductor wafer, On the adhesive material, the semiconductor wafer includes a bonding pad having an adhesion/barrier layer positioned over one of the pads exposed by one of the openings of the protective layer; a wire bonding wire bonding the bonding pad and the substrate And a polymer material positioned on the substrate and covering the semiconductor wafer and the wire bonding wire.

For the above purpose, the present invention provides a chip package structure comprising a substrate; a lead-free solder ball bonded to the substrate; an adhesive material positioned on the substrate; and a semiconductor wafer positioned on the adhesive material, and The semiconductor wafer includes a wire bonding contact including an adhesion/barrier layer; a wire bonding wire bonding the wire bonding node and the substrate; and a polymer material disposed on the substrate and covering the semiconductor wafer and the wire bonding wire .

For the above purpose, the present invention provides a chip package structure including a lead frame including a wafer carrier and a pin, an adhesive material on the wafer carrier, and a semiconductor wafer. Positioned on the adhesive material, and the semiconductor wafer includes a bonding pad having one of the adhesion/barrier layers positioned over one of the pads exposed by one of the openings of the protective layer; a wire bonding wire bonding the wire bonding pad and the wire bonding pad a pin; and a polymer material covering the wafer carrier, the semiconductor wafer, the wire bonding wire and a portion of the pin.

For the above purposes, the present invention provides a chip package structure including a lead frame including a wafer carrier and a lead; an adhesive material on the wafer carrier; and a semiconductor wafer positioned on the bond In the material, the semiconductor wafer includes a wire bonding contact including an adhesion/barrier layer; a wire bonding wire bonding the wire bonding contact and the pin; and a polymer material covering the wafer carrier and the semiconductor wafer , the wire conductor and part of the pin.

For the above purposes, the present invention provides a wafer packaging process including the steps of providing a semiconductor wafer comprising a bonding pad having an adhesion/barrier layer positioned over a pad exposed by an opening in one of the protective layers Adhering the semiconductor wafer to a first surface of a substrate by using an adhesive material; forming a wire bonding wire to bond the wire bonding pad to the substrate; forming a polymer material on the first surface and covering the a semiconductor wafer and the wire bonding wire; forming a lead-free solder on a second surface of the substrate, and performing a reflow process at a temperature between 230 ° C and 260 ° C to form a lead-free solder Lead-free solder Ball); and cutting the substrate and the polymer material to form a wafer package structure.

The purpose, technical contents, features and effects achieved by the present invention will be more readily understood by the detailed description of the embodiments and the accompanying drawings.

Referring to FIG. 2A, a semiconductor substrate 2 (or an IC substrate), such as a germanium substrate, a gallium arsenide (GaAs) substrate, or a germanium telluride (SiGe) substrate, may also be used. It is a blank wafer, such as a silicon wafer, a gallium arsenide wafer, or a germanium telluride wafer. The plurality of semiconductor elements 4 are located in or above the semiconductor substrate 2, and the semiconductor elements 4 include a memory, a logic element, a passive element (such as a resistor, a capacitor or an inductor) or an active element, etc., wherein the active element is, for example, a metal oxide semiconductor (MOS). The MOS device is, for example, a p-channel MOS device, an n-channel MOS device, or a bi-carrier complementary MOS device (BiCMOS devices). ), Bipolar Junction Transistor (BJT) or Complementary Metal Oxide Semiconductor (CMOS). In addition, the term "above" in the present invention means that it is located on and in contact with something, or that it is located on something but not in contact with it.

A wiring structure 6 is placed over the semiconductor substrate 2, and these semiconductor elements 4 are connected. The line structure 6 may be a plurality of patterned metal layers 8 (having a thickness t1 such as less than 3 microns, for example between 0.2 microns and 2 microns Between) and a plurality of metal plugs 10 are formed. For example, the patterned metal layer 8 and the metal plug 10 are mainly made of copper, that is, the patterned metal layer 8 may be a copper layer having a thickness of less than 3 micrometers (for example, between 0.2 micrometers and 2 micrometers). Or, the material of the patterned metal layer 8 is mainly aluminum-containing metal (such as aluminum or aluminum alloy), and the material of the metal plug 10 is mainly tungsten, that is, the patterned metal layer 8 can be less than 3 An aluminum-containing metal layer of micron (such as between 0.2 microns and 2 microns). Further, the manner of forming the wiring structure 6 includes a sputtering process, a damascene process, or an electroplating process.

For example, in the case of a damascene process, the manner of forming the wiring structure 6 includes depositing a first dielectric layer on the upper surface of a second dielectric layer by means of chemical vapor deposition (CVD). The material of the first dielectric layer and the material of the second dielectric layer comprise a material having a oxynitride compound and a dielectric constant value (k) of between 1.5 and 3; then, forming a first photoresist layer Depositing a first dielectric layer on the first dielectric layer with a first photoresist layer opening in the first photoresist layer to expose the second dielectric layer to form a trench; after forming the trench, removing The first photoresist layer continues; forming a second photoresist layer on the first dielectric layer and the second dielectric layer exposed by the trench, and the second photoresist layer in the second photoresist layer The layer opening exposes the second dielectric layer; then, the second dielectric layer exposed by the opening of the second photoresist layer is removed to form a via hole, and after the via hole is formed, the second photoresist layer is removed. Therefore, an opening composed of the trench and the via hole is formed in the first dielectric layer and the second dielectric layer. Then, use splash Plating or chemical vapor deposition depositing a barrier layer on the lower surface and sidewalls of the opening and on the upper surface of the first dielectric layer, wherein the barrier layer is made of a material selected from the group consisting of tantalum (Ta) and nitrogen. One of tantalum (TaN), tungsten nitride (WN), titanium nitride (TiN), and titanium (Ti) or a combination of the above materials, for example, the barrier layer may be sputtered; Depositing a layer of a seed layer of, for example, copper on the barrier layer by sputtering or chemical vapor deposition, and then plating a copper metal on the seed layer, and finally using chemical mechanical polishing (CMP). The copper metal, the seed layer and the barrier layer outside the opening are removed until the upper surface of the first dielectric layer is exposed. The metal formed in the trench in this manner (including the barrier layer, the seed layer, and the electroplated copper) is the patterned metal layer 8, and the metal formed in the via hole is the metal plug 10, and these patterns The metal layer 8 can pass through the metal plug 10 in the via hole to communicate with the patterned metal layer 8 between the adjacent two layers or to the semiconductor element 4.

Moreover, the method of forming the patterned metal layer 8 is to first sputter an aluminum alloy layer (which includes 90 wt% or more of aluminum and 10 wt% or less of copper) on a dielectric layer by a sputtering process, and then pass through. The lithography process patterns the aluminum alloy layer. That is, the wiring structure 6 includes sputtered aluminum.

The plurality of dielectric layers 12 are positioned above the semiconductor substrate 2, and the patterned metal layer 8 is positioned between the dielectric layers 12, and is connected to the adjacent two layers through the metal plugs 10 located in the dielectric layers 12. The patterned metal layer 8 is formed. The dielectric layer 12 is generally formed by chemical vapor deposition (CVD), and the dielectric layer 12 is, for example, an oxonium compound (for example, SiO ₂ ), an oxide of tetraethoxy decane (TEOS), or Carbon, oxygen and hydrogen compounds (eg Si _w C _x O _y H _z ), nitrogen ruthenium compounds (eg Si ₃ N ₄ ), oxynitride compounds, Fluorinated Silicate Glass (FSG), silk screen (SiLK) ), Black Diamond, Borophosphosilicate Glass (BPSG), polyarylene ether, porous silicon oxide, polybenzoxazole (PBO), A material having a dielectric constant value (k) between 1.5 and 3 or a glass formed by spin coating (Spin-On Glass, SOG; Chinese can also be translated as spin-on glass). Further, the thickness t2 of the dielectric layer 12 is, for example, less than 3 μm, and preferably the thickness is between 0.3 μm and 2.5 μm.

A protective layer 14 is positioned over the wiring structure 6 and the dielectric layer 12. The protective layer 14 protects the semiconductor component 4 and the wiring structure 6 from moisture and foreign ion contamination, that is, It is said that the protective layer 14 can prevent mobile ions (such as sodium ions), moisture, transition metals (such as gold, silver, copper) and other impurities from penetrating, and damage the semiconductor components under the protective layer 14. 4 (for example a transistor, a polysilicon resistor or a polysilicon-polysilicon capacitor) or a line structure 6. In addition, the term "below" is used in the present invention to mean that it is underneath and in contact with something, or that it is below something but not in contact with it; the word "below" is used in the present invention to indicate a bit. Under and in contact with something.

The protective layer 14 is usually composed of an oxonium compound (for example, SiO ₂ ), Phosphosilicate Glass (PSG), a nitrogen cerium compound (for example, Si ₃ N ₄ ) or an oxynitride compound, and the thickness of the protective layer 14 T3 is typically greater than 0.3 microns (μm), for example, the thickness t3 of the protective layer 14 is between 0.3 microns and 1.5 microns. Further, in the case where the protective layer 14 includes a layer of a ruthenium nitride compound, the thickness of the ruthenium nitride compound layer is usually more than 0.3 μm. Next, the manner of manufacturing the protective layer 14 will be described, which is about ten different methods, which are respectively described below.

The first method of forming the protective layer 14 is to first form a layer of germanium oxide having a thickness of between 0.2 μm and 1.2 μm by chemical vapor deposition (CVD), followed by chemical vapor deposition (CVD) to form a thickness between A layer of tantalum nitride between 0.2 micrometers and 1.2 micrometers is on the tantalum oxide layer. Among them, the word "upper" in the present invention means that it is placed on and in contact with something.

The second method of forming the protective layer 14 is to first form a niobium oxide layer having a thickness of between 0.2 μm and 1.2 μm by chemical vapor deposition (CVD), and continue to utilize plasma enhanced chemical vapor deposition (Plasma Enhanced Chemical). Vapor Deposition (PECVD) forms a layer of bismuth oxynitride between 0.05 μm and 0.15 μm on the yttrium oxide layer, followed by chemical vapor deposition (CVD) to form a thickness between 0.2 μm and 1.2 μm. A tantalum nitride layer is on the niobium oxynitride layer.

A third method of forming the protective layer 14 is to first form a layer of bismuth oxynitride having a thickness of between 0.05 μm and 0.15 μm by chemical vapor deposition (CVD), and continue to form a thickness by chemical vapor deposition (CVD). A layer of germanium oxide between 0.2 μm and 1.2 μm is deposited on the hafnium oxynitride layer, followed by chemical vapor deposition (CVD) to form a tantalum nitride layer having a thickness between 0.2 μm and 1.2 μm in the hafnium oxide layer. on.

The fourth method of fabricating the protective layer 14 is to first form a first oxidation thickness between 0.2 micrometers and 0.5 micrometers by chemical vapor deposition (CVD). The ruthenium layer continues to form a second ruthenium oxide layer having a thickness of between 0.5 μm and 1 μm on the first ruthenium oxide layer by spin-coating, followed by thickness formation by chemical vapor deposition (CVD). A third layer of ruthenium oxide between 0.2 micrometers and 0.5 micrometers is on the second ruthenium oxide layer, and finally a chemical vapor deposition (CVD) is used to form tantalum nitride having a thickness of between 0.2 micrometers and 1.2 micrometers. The layer is on the third layer of ruthenium oxide.

The fifth method for forming the protective layer 14 is to form a layer of germanium oxide having a thickness of between 0.5 μm and 2 μm by using High Density Plasma Chemical Vapor Deposition (HDP-CVD). A layer of tantalum nitride having a thickness of between 0.2 micrometers and 1.2 micrometers is formed on the tantalum oxide layer by chemical vapor deposition (CVD).

The sixth method for forming the protective layer 14 is to first form an undoped silicate glass (USG) having a thickness between 0.2 μm and 3 μm, and continue to form, for example, tetraethoxy decane, borophosphorus. An insulating layer having a thickness of between 0.5 micrometers and 3 micrometers, such as bismuth glass (BPSG) or phosphor bismuth glass (PSG), is deposited on the undoped bismuth glass layer, followed by chemical vapor deposition (CVD) to form a thickness layer. A layer of tantalum nitride between 0.2 microns and 1.2 microns is on the insulating layer.

A seventh method of fabricating the protective layer 14 is to selectively form a first layer of bismuth oxynitride having a thickness between 0.05 micrometers and 0.15 micrometers by chemical vapor deposition (CVD), and continue to utilize chemical vapor deposition (CVD). Forming a layer of germanium oxide having a thickness between 0.2 microns and 1.2 microns on the first layer of hafnium oxynitride, followed by selective use of chemical vapor deposition (CVD) A second layer of bismuth oxynitride having a thickness of between 0.05 micrometers and 0.15 micrometers is formed on the yttrium oxide layer, and then chemical vapor deposition (CVD) is used to form a nitriding layer having a thickness of between 0.2 micrometers and 1.2 micrometers. The ruthenium layer is on the second ruthenium oxynitride layer or on the ruthenium oxide layer, and then a third ruthenium oxynitride layer having a thickness of between 0.05 μm and 0.15 μm can be selectively formed by chemical vapor deposition (CVD). On the tantalum nitride layer, chemical vapor deposition (CVD) is finally used to form a tantalum oxide layer having a thickness between 0.2 μm and 1.2 μm on the third hafnium oxide layer or on the tantalum nitride layer.

The eighth method for forming the protective layer 14 is to first form a first ruthenium oxide layer having a thickness of between 0.2 μm and 1.2 μm by chemical vapor deposition (CVD), and continue to form a thickness of 0.5 μm by spin coating. A second ruthenium oxide layer between 1 micron is on the first ruthenium oxide layer, followed by chemical vapor deposition (CVD) to form a third ruthenium oxide layer having a thickness between 0.2 micrometers and 1.2 micrometers in the second oxidation On the ruthenium layer, a layer of tantalum nitride having a thickness of between 0.2 μm and 1.2 μm is formed on the third yttria layer by chemical vapor deposition (CVD), and finally formed by chemical vapor deposition (CVD). A fourth layer of ruthenium oxide having a thickness between 0.2 microns and 1.2 microns is on the tantalum nitride layer.

The ninth method for fabricating the protective layer 14 is to first form a first ruthenium oxide layer having a thickness of between 0.5 μm and 2 μm by high-density plasma chemical vapor deposition (HDP-CVD), and continue to utilize chemical vapor deposition. (CVD) forming a tantalum nitride layer having a thickness between 0.2 μm and 1.2 μm on the first tantalum oxide layer, followed by high-density plasma chemical vapor deposition (HDP-CVD) to a thickness of 0.5 μm a second between 2 microns The ruthenium oxide layer is on the tantalum nitride layer.

The tenth method for fabricating the protective layer 14 is to first form a first tantalum nitride layer having a thickness of between 0.2 μm and 1.2 μm by chemical vapor deposition (CVD), and continue to form a thickness by chemical vapor deposition (CVD). A layer of germanium oxide between 0.2 micrometers and 1.2 micrometers is on the first tantalum nitride layer, followed by chemical vapor deposition (CVD) to form a second nitride having a thickness between 0.2 micrometers and 1.2 micrometers. The ruthenium layer is on the ruthenium oxide layer.

In the present invention, a pad 16 of the line structure 6 is exposed through an opening 14a in the protective layer 14. The thickness t4 of the pad 16 is, for example, between 0.4 micrometers and 3 micrometers or between 0.2 micrometers. Between 2 microns. The method of forming the pad 16 is, for example, forming a silicon or aluminum alloy as a pad 16 (having a thickness of, for example, between 0.2 μm and 2 μm) by a sputtering process, or forming copper as a pad 16 by an electroplating process (its The thickness is, for example, between 0.2 microns and 2 microns). Therefore, the pad 16 may be a metal layer (also referred to as an aluminum pad) having a thickness of between 0.2 micrometers and 2 micrometers and a material mainly comprising aluminum, or a material having a thickness of between 0.2 micrometers and 2 micrometers. It mainly consists of a copper metal layer (also known as a copper pad). In addition, when the pad 16 includes copper metal formed by an electroplating process, a barrier layer is disposed under the bottom of the electroplated copper and outside the sidewall, and the material of the barrier layer is, for example, tantalum (Ta) or nitrogen.钽 (TaN).

In addition, the lateral dimension d of the opening 14a is between 0.5 micrometers and 20 micrometers or between 20 micrometers and 200 micrometers, and the shape of the opening 14a may be a circle, a square, a rectangle or a polygon of five or more sides ( For example, a hexagon or an octagon). That is, the shape of the opening 14a may be circular and straight The diameter is between 0.5 micrometers and 20 micrometers or between 20 micrometers and 200 micrometers; or the shape of the opening 14a may be square and the length of one side is between 0.5 micrometers and 20 micrometers or Between 20 micrometers and 200 micrometers; or, the shape of the opening 14a may be a rectangle, and a width is between 0.5 micrometers and 20 micrometers or between 20 micrometers and 200 micrometers; or, the opening 14a The shape may be a polygon of five or more sides (for example, a hexagon or an octagon), and a width is between 0.5 micrometers and 20 micrometers or between 20 micrometers and 200 micrometers, for example, the shape of the opening 14a. In the case of a hexagon (or hexagon), the width of the opposite side is between 0.5 micrometers and 20 micrometers or between 20 micrometers and 200 micrometers.

Referring to FIG. 2B, the present invention can optionally form a metal cap 18 having a thickness between 0.4 micrometers and 3 micrometers on a pad 16 exposed by one of the openings 14a of the protective layer 14. The pad 16 is protected from oxidation and damage. For example, the metal protective cover 18 includes a barrier layer having a thickness between 0.01 micrometers and 0.7 micrometers on the pads 16 exposed by the openings 14a, and a thickness ranging from 0.4 micrometers to 2 micrometers. An aluminum-containing metal layer is disposed on the barrier layer, wherein the barrier layer is a titanium layer, a titanium-tungsten alloy layer, a titanium nitride layer, a tantalum layer, a tantalum nitride layer, and a chromium layer. (Cr) layer or a refractory metal alloy layer, etc., and the aluminum-containing metal layer is, for example, an aluminum layer, an aluminum-copper alloy (Al-Cu alloy) layer or an aluminum-bismuth-copper alloy (Al-Si- a layer of Cu alloy); or, the metal protective cover 18 is an aluminum-containing metal layer having a thickness of between 0.4 μm and 2 μm on the pad 16 (such as a copper pad) exposed by the opening 14a, and the aluminum alloy is contained therein. The layer is, for example, an aluminum layer, an aluminum-copper alloy layer or an aluminum-bismuth-copper layer. Alloy (Al-Si-Cu alloy) layer.

For example, when the material of the pad 16 mainly includes copper metal, the pad 16 usually has a metal protective cover 18, so that the pad 16 (or copper pad) mainly containing copper metal is protected from oxidation and erosion. The metal protective cover 18 includes a tantalum-containing metal layer (for example, a tantalum layer or a tantalum nitride layer) on the pad 16, and includes an aluminum-containing metal layer (for example, an aluminum layer or an aluminum alloy layer). On this layer containing a base metal.

In the present invention, the structure 20 represents the structure between the protective layer 14 and the semiconductor substrate 2 in FIGS. 2A and 2B, that is, the structure 20 includes the semiconductor element 4 and the line structure 6 in FIGS. 2A and 2B. (including patterned metal layer 8 and metal plug 10) and dielectric layer 12 and the like.

Referring to FIG. 3, the present invention can form a bonding pad 22 having a thickness between 1 micrometer and 20 micrometers, and a pad 16 (for example, an aluminum pad or copper) exposed in an opening 14a. The pad has a preferred thickness of between 3 micrometers and 5 micrometers, and the wire bonding pad 22 serves as a wire bonding junction for bonding a wire conductor such as a gold wire. For a method of forming the wire bonding pads 22 on the pads 16 exposed by the openings 14a, refer to the description of the series of Fig. 4. Further, after the wire bonding pads 22 are formed, a semiconductor wafer 23 is cut by dicing to form a plurality of semiconductor wafers 23 (or IC chips).

Referring to FIG. 4A, an adhesion/barrier layer 24 having a thickness between 0.01 micrometers and 0.7 micrometers (preferably between 0.03 micrometers and 0.7 micrometers) is formed on the protective layer. 14 on the pad 16 exposed by the opening 14a, wherein the pad 16 may be an aluminum pad or It is a copper pad. In addition, the material of the adhesion/barrier layer 24 includes titanium, titanium tungsten alloy, titanium nitride, chromium, tantalum, tantalum nitride or alloy of refractory metal.

For example, the adhesion/barrier layer 24 can be a titanium layer having a thickness between 0.01 microns and 0.7 microns (preferably between 0.03 microns and 0.7 microns) sputtered onto the protective layer 14 and exposed to the opening 14a. The primary material comprises aluminum pads 16 (ie, aluminum pads); alternatively, the adhesion/barrier layer 24 can be between 0.01 microns and 0.7 microns thick (preferably between 0.03 microns and 0.7 microns). a titanium-tungsten alloy layer is sputtered on the protective layer 14 and the main material exposed by the opening 14a includes the pad 16 of aluminum; or the adhesion/barrier layer 24 may have a thickness of 0.01 micron to 0.7 micron. A layer of titanium nitride (preferably between 0.03 micrometers and 0.7 micrometers) is sputtered on the protective layer 14 and the main material exposed by the opening 14a comprises a pad 16 of aluminum; or, adhesion/resistance The barrier layer 24 may be a chrome layer having a thickness between 0.01 micrometers and 0.7 micrometers (preferably between 0.03 micrometers and 0.7 micrometers). The main material exposed on the protective layer 14 and the opening 14a includes: The pad 16 of aluminum; or the adhesion/barrier layer 24 may have a thickness between 0.01 microns and 0.7 microns ( Preferably, the tantalum nitride layer is sputtered on the protective layer 14 and the pad 16 of the main material including the aluminum exposed by the opening 14a; or the adhesion/barrier layer 24 It may be a layer of a thickness of between 0.01 micrometers and 0.7 micrometers (preferably between 0.03 micrometers and 0.7 micrometers) which is sputtered on the protective layer 14 and the main material exposed by the opening 14a comprises aluminum. Pad 16; alternatively, the adhesion/barrier layer 24 can be between 0.01 microns and 0.7 microns thick A refractory metal alloy layer between (preferably between 0.03 micrometers and 0.7 micrometers) is sputtered onto the protective layer 14 and the main material exposed to the opening 14a comprises a pad 16 of aluminum.

For example, the adhesion/barrier layer 24 can be a titanium layer having a thickness between 0.01 microns and 0.7 microns (preferably between 0.03 microns and 0.7 microns) sputtered onto the protective layer 14 and exposed to the opening 14a. The main material is copper pad 16 (ie, copper pad); or the adhesion/barrier layer 24 may be between 0.01 micrometers and 0.7 micrometers thick (preferably between 0.03 micrometers and 0.7 micrometers). a titanium-tungsten alloy layer is sputtered on the protective layer 14 and the main material exposed by the opening 14a comprises copper pads 16; or the adhesion/barrier layer 24 may be between 0.01 micrometers and 0.7 micrometers thick. A titanium nitride layer (preferably between 0.03 micrometers and 0.7 micrometers) is sputtered on the protective layer 14 and the main material exposed by the opening 14a comprises copper pads 16; or, adhesion/resistance The barrier layer 24 may be a chrome layer having a thickness between 0.01 micrometers and 0.7 micrometers (preferably between 0.03 micrometers and 0.7 micrometers). The main material exposed on the protective layer 14 and the opening 14a includes: The pad 16 of copper; or the adhesion/barrier layer 24 may be between 0.01 microns and 0.7 microns thick ( a layer of tantalum nitride which is preferably between 0.03 micrometers and 0.7 micrometers is sputtered on the protective layer 14 and the pad 16 of the main material including the copper exposed by the opening 14a; or the adhesion/barrier layer 24 A layer of sputtering which may be between 0.01 micrometers and 0.7 micrometers thick (preferably between 0.03 micrometers and 0.7 micrometers) is sputtered on the protective layer 14 and the main material exposed by the opening 14a comprises copper. Pad 16; alternatively, the adhesion/barrier layer 24 can be between 0.01 microns and 0.7 microns thick A refractory metal alloy layer between (preferably between 0.03 micrometers and 0.7 micrometers) is sputtered onto the protective layer 14 and the pads 16 of the main material exposed by the openings 14a, including copper.

Referring to FIG. 4B, a sub-layer 26 having a sputter thickness between 0.03 microns and 1 micron (preferably between 0.03 microns and 0.7 microns) is on the adhesion/barrier layer 24. Alternatively, the seed layer 26 may be formed by evaporation, physical vapor deposition, or electroless plating. Since the seed layer 26 can facilitate the formation of the subsequent metal layer, the material of the seed layer 26 may vary depending on the material of the subsequent metal layer, such as when a metal layer of gold (Au) is electroplated on the seed layer 26. The material of the seed layer 26 is preferably gold; or, when the metal layer of copper (Cu) is plated on the seed layer 26, the material of the seed layer 26 is preferably copper; or, when the material is palladium When the metal layer of (palladium, Pd) is electroplated on the seed layer 26, the material of the seed layer 26 is preferably palladium.

For example, when the adhesion/barrier layer 24 is formed by sputtering in a titanium layer having a thickness between 0.01 micrometers and 0.7 micrometers (preferably between 0.03 micrometers and 0.7 micrometers), the seed layer 26 A gold layer having a thickness of between 0.03 micrometers and 1 micrometer (preferably between 0.03 micrometers and 0.7 micrometers) may be sputtered onto the titanium layer; or, when the adhesion/barrier layer 24 is When the sputtering method forms a titanium-tungsten alloy layer having a thickness of between 0.01 micrometers and 0.7 micrometers (preferably between 0.03 micrometers and 0.7 micrometers), the seed layer 24 may have a thickness of 0.03 micrometers to 1 A gold layer between the micrometers (preferably between 0.03 micrometers and 0.7 micrometers) is sputtered onto the titanium-tungsten alloy layer; or, when the adhesion/barrier layer 26 is formed by sputtering When the titanium nitride layer is between 0.01 micrometers and 0.7 micrometers (preferably between 0.03 micrometers and 0.7 micrometers), the seed layer 24 may have a thickness of between 0.03 micrometers and 1 micrometer (preferably a gold layer between 0.03 micrometers and 0.7 micrometers is sputtered onto the titanium nitride layer; or, when the adhesion/barrier layer 24 is sputtered, the thickness is between 0.01 micrometers and 0.7. The seed layer 26 may have a thickness between 0.03 microns and 1 micron (preferably between 0.03 microns and 0.7 microns) between one micron (preferably between 0.03 microns and 0.7 microns). a gold layer is sputtered onto the chrome layer; or, when the adhesion/barrier layer 24 is sputtered, the thickness is between 0.01 micrometers and 0.7 micrometers (preferably between 0.03 micrometers) When a layer of tantalum nitride is between 0.7 microns, the seed layer 26 may be a gold layer sputtered between 0.03 microns and 1 micron (preferably between 0.03 microns and 0.7 microns). On the tantalum nitride layer; or, when the adhesion/barrier layer 24 is formed by sputtering, the thickness is between 0.01 micrometers and 0.7 micrometers (preferably When a layer of between 0.03 microns and 0.7 microns is used, the seed layer 26 can be a gold layer sputtering having a thickness between 0.03 microns and 1 micron (preferably between 0.03 microns and 0.7 microns). On the ruthenium layer; or, when the adhesion/barrier layer 24 is formed by sputtering, the thickness is between 0.01 micrometers and 0.7 micrometers (preferably between 0.03 micrometers and 0.7 micrometers). In the case of the refractory metal alloy layer, the seed layer 26 may be a gold layer having a thickness of between 0.03 micrometers and 1 micrometer (preferably between 0.03 micrometers and 0.7 micrometers) sputtered onto the refractory metal alloy layer.

For example, when the adhesion/barrier layer 24 is formed by sputtering, the thickness is between 0.01 micrometers and 0.7 micrometers (preferably between 0.03 micrometers and so far). When a titanium layer is between 0.7 micrometers, the seed layer 26 may be a copper layer having a thickness of between 0.03 micrometers and 1 micrometer (preferably between 0.03 micrometers and 0.7 micrometers). Or; when the adhesion/barrier layer 24 is formed by sputtering, the thickness of the titanium-tungsten alloy layer is between 0.01 micrometers and 0.7 micrometers (preferably between 0.03 micrometers and 0.7 micrometers). The seed layer 24 may be a copper layer having a thickness of between 0.03 micrometers and 1 micrometer (preferably between 0.03 micrometers and 0.7 micrometers) sputtered onto the titanium-tungsten alloy layer; or, when adhered The barrier layer 26 is a titanium nitride layer formed by sputtering in a thickness of between 0.01 micrometers and 0.7 micrometers (preferably between 0.03 micrometers and 0.7 micrometers), and the seed layer 24 may be a copper layer having a thickness of between 0.03 micrometers and 1 micrometer (preferably between 0.03 micrometers and 0.7 micrometers) is sputtered onto the titanium nitride layer; or, when the adhesion/barrier layer 24 is When the sputtering method forms a chromium layer having a thickness of between 0.01 micrometers and 0.7 micrometers (preferably between 0.03 micrometers and 0.7 micrometers), the seed layer 26 a copper layer having a thickness of between 0.03 micrometers and 1 micrometer (preferably between 0.03 micrometers and 0.7 micrometers) is sputtered onto the chromium layer; or, when the adhesion/barrier layer 24 is When the sputtering method forms a tantalum nitride layer having a thickness of between 0.01 micrometers and 0.7 micrometers (preferably between 0.03 micrometers and 0.7 micrometers), the seed layer 26 may have a thickness of 0.03 micrometers to 1 A copper layer between the micrometers (preferably between 0.03 micrometers and 0.7 micrometers) is sputtered onto the tantalum nitride layer; or, when the adhesion/barrier layer 24 is formed by sputtering When a layer of between 0.01 microns and 0.7 microns (preferably between 0.03 microns and 0.7 microns) is used, the seed layer 26 may have a thickness between 0.03 microns and 1 micron (more) a copper layer of between 0.03 micrometers and 0.7 micrometers is sputtered onto the germanium layer; or, when the adhesion/barrier layer 24 is sputtered, the thickness is between 0.01 micrometers and 0.7 micrometers. The seed layer 26 may have a thickness between 0.03 microns and 1 micron (preferably between 0.03 microns and 0.7 microns) between a refractory metal alloy layer (preferably between 0.03 microns and 0.7 microns). A copper layer is sputtered between the refractory metal alloy layers.

For example, when the adhesion/barrier layer 24 is formed by sputtering in a titanium layer having a thickness between 0.01 micrometers and 0.7 micrometers (preferably between 0.03 micrometers and 0.7 micrometers), the seed layer 26 A palladium layer having a thickness of between 0.03 micrometers and 1 micrometer (preferably between 0.03 micrometers and 0.7 micrometers) may be sputtered onto the titanium layer; or, when the adhesion/barrier layer 24 is When the sputtering method forms a titanium-tungsten alloy layer having a thickness of between 0.01 micrometers and 0.7 micrometers (preferably between 0.03 micrometers and 0.7 micrometers), the seed layer 24 may have a thickness of 0.03 micrometers to 1 A palladium layer between the micrometers (preferably between 0.03 micrometers and 0.7 micrometers) is sputtered onto the titanium-tungsten alloy layer; or, when the adhesion/barrier layer 26 is formed by sputtering When a titanium nitride layer is between 0.01 micrometers and 0.7 micrometers (preferably between 0.03 micrometers and 0.7 micrometers), the seed layer 24 may have a thickness between 0.03 micrometers and 1 micrometer (preferably a palladium layer between 0.03 microns and 0.7 microns is sputtered onto the titanium nitride layer; or, when the adhesion/barrier layer 24 is sputtered When a chromium layer having a thickness of between 0.01 micrometers and 0.7 micrometers (preferably between 0.03 micrometers and 0.7 micrometers) is formed, the seed layer 26 may have a thickness of between 0.03 micrometers and 1 micrometer (compared to a palladium layer sputtered between 0.03 microns and 0.7 microns) On the layer; or, when the adhesion/barrier layer 24 is formed by sputtering, the thickness is between 0.01 micrometers and 0.7 micrometers (preferably between 0.03 micrometers and 0.7 micrometers) of tantalum nitride. In the case of a layer, the seed layer 26 may be a palladium layer having a thickness of between 0.03 micrometers and 1 micrometer (preferably between 0.03 micrometers and 0.7 micrometers) sputtered on the tantalum nitride layer; or, when When the adhesion/barrier layer 24 is formed by sputtering, a thickness of between 0.01 micrometers and 0.7 micrometers (preferably between 0.03 micrometers and 0.7 micrometers), the seed layer 26 may be thick. A palladium layer between 0.03 micrometers and 1 micrometer (preferably between 0.03 micrometers and 0.7 micrometers) is sputtered onto the germanium layer; or, when the adhesion/barrier layer 24 is sputtered When a refractory metal alloy layer having a thickness of between 0.01 micrometers and 0.7 micrometers (preferably between 0.03 micrometers and 0.7 micrometers) is formed, the seed layer 26 may have a thickness of between 0.03 micrometers and 1 micrometer. A palladium layer (preferably between 0.03 microns and 0.7 microns) is sputtered onto the refractory metal alloy layer.

Referring to FIG. 4C, a photoresist layer 28 having a spin-on coating thickness between 1 micrometer and 25 micrometers is disposed on the seed layer 26, wherein the preferred thickness of the photoresist layer 28 is between The photoresist layer 28 is, for example, between a micron and a 10 micron, and the photoresist layer 28 is, for example, a positive-type photoresist layer. Next, referring to FIG. 4D, the photoresist layer 28 is patterned by exposure and development processes to form a photoresist layer opening 28a in the photoresist layer 28 and exposed to the pads. The seed layer 26 above the 16th, wherein during the process of patterning the photoresist layer 28, for example, a double (1X) stepper or a double (1X) contact aligner is used for exposure. . In addition, after development, the plasma can be used first (for example, electricity containing oxygen ions) The slurry or a plasma containing a fluoride ion having a concentration of less than 200 PPM and oxygen ions cleans the seed layer 26 exposed by the photoresist layer opening 28a, thereby removing photoresist residue or other foreign matter on the upper surface of the seed layer 26.

Referring to FIG. 4E, a metal layer 30 having a thickness between 1 micrometer and 20 micrometers is formed on the seed layer 26 exposed by the photoresist layer opening 28a, wherein the preferred thickness of the metal layer 30 is The material is between 3 microns and 5 microns, and the material of the metal layer 30 comprises gold, copper, nickel or palladium.

For example, the metal layer 30 may be a gold layer plating having a thickness between 1 micrometer and 20 micrometers (preferably a thickness of between 3 micrometers to 5 micrometers or between 1 micrometer and 4 micrometers). The photoresist layer opening 28a is exposed on the gold seed layer 26; alternatively, the metal layer 30 may have a thickness between 1 micrometer and 20 micrometers (preferably, the thickness is between 3 micrometers and 5 micrometers). Or a palladium layer between 1 micrometer and 4 micrometers is plated on the seed layer 26 of palladium exposed by the photoresist layer opening 28a; or the metal layer 30 may have a thickness of 1 micrometer to 10 A copper layer between the micrometers is plated on the copper seed layer 26 exposed by the photoresist layer opening 28a, and a nickel layer having a thickness between 1 micrometer and 5 micrometers is plated on the copper layer and the thickness is A gold layer between 1 micrometer and 5 micrometers is electroplated on the nickel layer, wherein the total thickness of the copper layer, the nickel layer and the gold layer is between 1 micrometer and 20 micrometers, and the preferred thickness is Between 3 micrometers and 5 micrometers; or, the metal layer 30 may be a copper layer having a thickness between 1 micrometer and 13 micrometers plated on the photoresist layer A nickel layer having a thickness of between 1 micrometer and 5 micrometers on the copper seed layer 26 exposed by the port 28a is electroplated on the copper layer and a gold layer having a thickness of between 0.05 micrometers and 2 micrometers. No electricity Electroplating on the nickel layer, wherein the total thickness of the copper layer, the nickel layer and the gold layer is between 1 micrometer and 20 micrometers, and the preferred thickness is between 3 micrometers and 5 micrometers; or The metal layer 30 may be a copper layer having a thickness between 1 micrometer and 10 micrometers plated on the copper seed layer 26 exposed by the photoresist layer opening 28a and having a thickness between 1 micrometer and 5 micrometers. A nickel layer is electroplated on the copper layer and a palladium layer having a thickness of between 1 micrometer and 5 micrometers is electroplated on the nickel layer, wherein the total thickness of the copper layer, the nickel layer and the palladium layer is 1 micron. Between 20 microns and a preferred thickness is between 3 microns and 5 microns; alternatively, the metal layer 30 can be a copper layer having a thickness between 1 micron and 13 microns plated in the photoresist layer opening 28a A nickel layer having a thickness of between 1 micrometer and 5 micrometers on the exposed copper seed layer 26 is electrolessly plated on the copper layer and a palladium layer having a thickness of between 0.05 micrometers and 2 micrometers. On the nickel layer, the total thickness of the copper layer, the nickel layer and the palladium layer is between 1 micrometer and 20 micrometers, and the thickness is preferably It is between 3 and 5 micrometers interposed.

Referring to FIG. 4F, after the metal layer 30 is formed, the photoresist layer 28 is subsequently removed, for example, by removing the photoresist layer 28 using an organic solvent containing an amide. In addition, after removing the photoresist layer 28, the metal layer 30 and the seed layer 26 may be cleaned by using a plasma (for example, a plasma containing oxygen ions or a plasma containing a fluoride ion concentration of less than 200 PPM and oxygen ions) to remove the metal. The upper surface of layer 30 and the photoresist residue on the upper surface of seed layer 26.

Continuing to refer to FIG. 4G, the seed layer 26 and the adhesion/barrier layer 24 that are not under the metal layer 30 are sequentially removed. The manner of removing the seed layer 26 and the adhesion/barrier layer 24 not under the metal layer 30 is, for example, etching, and the etching method can be further divided into dry etching and wet etching, and dry etching includes chemistry. Plasma etching, splash etching and chemical gas etching. For example, in the wet etching, when the adhesion/barrier layer 24 is a titanium-tungsten alloy, it can be removed by etching using a solution containing hydrogen peroxide, and when the adhesion/barrier layer 24 is titanium, it can be removed by using a solution containing a cyanofluoric acid. When the seed layer 26 is gold, it can be removed by etching using an iodine-containing etching solution (for example, an etching solution containing potassium iodide), and when the seed layer 26 is copper, etching using ammonium hydroxide (NH ₄ OH) can be utilized. Liquid etching removal; in dry etching, when the adhesion/barrier layer 24 is titanium or titanium tungsten alloy, it can be removed by plasma etching using chlorine or by reactive ion etching (RIE) process etching, and seed When layer 26 is gold, it can be removed by ion milling or by argon etching.

Therefore, the present invention can form a wire bonding pad 22 on one of the pads 16 exposed by the opening 14a, and the wire bonding pad 22 is formed by an adhesion/barrier layer 24 on the adhesion/barrier layer 24. A sub-layer 26 is formed with a metal layer 30 positioned on the seed layer 26. Moreover, the material of the wire bonding pad 22 includes titanium, titanium tungsten alloy, titanium nitride, chromium, tantalum, tantalum nitride, gold, copper, nickel or palladium. Therefore, the wire bonding pad 22 of the present invention may be in the form described below by the above-described manner of forming the wire bonding pads 22.

For example, the wire bonding pad 22 includes a titanium-containing metal layer (such as a titanium layer, a titanium nitride layer, or a titanium) having a thickness of between 0.01 micrometers and 0.7 micrometers (preferably between 0.03 micrometers and 0.7 micrometers). The material of the tungsten alloy layer exposed in the opening 14a mainly comprises a copper pad 16 (or a copper pad). a sub-layer having a thickness of between 0.03 micrometers and 1 micrometer (preferably between 0.03 micrometers and 0.7 micrometers) and having a gold material layer containing a titanium metal layer (eg, a titanium layer, a titanium nitride layer) a layer or a titanium-tungsten alloy layer) and a gold having a thickness between 1 micrometer and 20 micrometers (preferably a thickness of between 3 micrometers to 5 micrometers or between 1 micrometer and 4 micrometers) The layer is on the seed layer; or, the wire bonding pad 22 comprises a titanium-containing metal layer (such as a titanium layer, having a thickness of between 0.01 micrometers and 0.7 micrometers (preferably between 0.03 micrometers and 0.7 micrometers). a titanium nitride layer or a titanium-tungsten alloy layer) is formed on the surface of the opening 14a mainly comprising a copper pad 16 (or a copper pad) having a thickness of between 0.03 micrometers and 1 micrometer (preferably a sub-layer of palladium between 0.03 micrometers and 0.7 micrometers) and a titanium-containing metal layer (such as a titanium layer, a titanium nitride layer or a titanium-tungsten alloy layer) and a thickness of 1 micron. a palladium layer on the seed layer between 20 microns (preferably between 3 microns and 5 microns or between 1 and 4 microns); The wire bonding pad 22 includes a titanium-containing metal layer (such as a titanium layer, a titanium nitride layer or a titanium) having a thickness of between 0.01 micrometers and 0.7 micrometers (preferably between 0.03 micrometers and 0.7 micrometers). The tungsten alloy layer is located on the pad 16 (or copper pad) of the material mainly exposed by the opening 14a, and has a thickness of between 0.03 micrometers and 1 micrometer (preferably between 0.03 micrometers and 0.7 micrometers). And a material layer of copper is a copper layer having a thickness of between 1 micrometer and 10 micrometers on the titanium metal layer (such as a titanium layer, a titanium nitride layer or a titanium tungsten alloy layer). a layer of nickel on the seed layer having a thickness between 1 micrometer and 5 micrometers on the copper layer and a gold layer having a thickness between 1 micrometer and 5 micrometers on the nickel layer. And the nickel layer, The total thickness of the copper layer and the gold layer is between 1 micrometer and 20 micrometers, and the preferred thickness is between 3 micrometers and 5 micrometers; or the wire bonding pad 22 comprises a thickness of 0.01 micrometers to A titanium-containing metal layer (such as a titanium layer, a titanium nitride layer or a titanium-tungsten alloy layer) between 0.7 micrometers (preferably between 0.03 micrometers and 0.7 micrometers) is exposed to the opening 14a. A sub-layer of material consisting of copper pads 16 (or copper pads) having a thickness between 0.03 microns and 1 micron (preferably between 0.03 microns and 0.7 microns) and having a material of copper a copper layer having a thickness of between 1 micrometer and 10 micrometers on the titanium-containing metal layer (such as a titanium layer, a titanium nitride layer or a titanium-tungsten alloy layer) on the seed layer and having a thickness of 1 micrometer A nickel layer between 5 micrometers on the copper layer and a palladium layer having a thickness between 1 micrometer and 5 micrometers on the nickel layer, and the total of the nickel layer, the copper layer and the palladium layer The thickness is between 1 micrometer and 20 micrometers, and the preferred thickness is between 3 micrometers and 5 micrometers.

For example, the wire bonding pad 22 includes a chrome layer having a thickness between 0.01 micrometers and 0.7 micrometers (preferably between 0.03 micrometers and 0.7 micrometers). The material exposed in the opening 14a mainly includes copper pads. a sub-layer of 16 (or referred to as a copper pad) having a thickness between 0.03 micrometers and 1 micrometer (preferably between 0.03 micrometers and 0.7 micrometers) and having a gold content on the chromium layer and thickness a gold layer between 1 micrometer and 20 micrometers (preferably having a thickness between 3 micrometers and 5 micrometers or between 1 micrometer and 4 micrometers) on the seed layer; or The pad 22 includes a chrome layer having a thickness between 0.01 micrometers and 0.7 micrometers (preferably between 0.03 micrometers and 0.7 micrometers), and the material layer exposed in the opening 14a is mainly packaged. a sub-layer of copper on the pad 16 (or referred to as a copper pad) having a thickness between 0.03 microns and 1 micron (preferably between 0.03 microns and 0.7 microns) and having a palladium material a palladium layer on the chrome layer and between 1 micrometer and 20 micrometers in thickness (preferably between 3 micrometers and 5 micrometers or between 1 micrometer and 4 micrometers) Or; the wire bonding pad 22 comprises a chrome layer having a thickness of between 0.01 micrometers and 0.7 micrometers (preferably between 0.03 micrometers and 0.7 micrometers). The material exposed in the opening 14a mainly comprises copper. a sub-layer of copper on the pad 16 (or referred to as a copper pad) having a thickness between 0.03 micrometers and 1 micrometer (preferably between 0.03 micrometers and 0.7 micrometers) and having a material of copper a layer of copper having a thickness between 1 micrometer and 10 micrometers on the seed layer, a nickel layer having a thickness between 1 micrometer and 5 micrometers on the copper layer and a thickness ranging from 1 micrometer to 5 A gold layer between the micrometers is on the nickel layer, and the total thickness of the nickel layer, the copper layer and the gold layer is between 1 micrometer and 20 micrometers, and the preferred thickness is Between 3 microns and 5 microns; or, the wire bond pad 22 includes a chrome layer having a thickness between 0.01 microns and 0.7 microns (preferably between 0.03 microns and 0.7 microns) at the opening 14a The exposed material mainly comprises a copper pad 16 (or a copper pad) having a thickness between 0.03 micrometers and 1 micrometer (preferably between 0.03 micrometers and 0.7 micrometers) and a material of copper. a layer of nickel on the chrome layer having a thickness between 1 micrometer and 10 micrometers on the seed layer and a nickel layer having a thickness between 1 micrometer and 5 micrometers on the copper layer And a palladium layer having a thickness between 1 micrometer and 5 micrometers is on the nickel layer, and the total thickness of the nickel layer, the copper layer and the palladium layer is between 1 micrometer and 20 micrometers, and preferably. Thickness is Between 3 microns and 5 microns.

For example, the wire bonding pad 22 includes a germanium-containing metal layer (such as a germanium layer or a tantalum nitride layer) having a thickness between 0.01 micrometers and 0.7 micrometers (preferably between 0.03 micrometers and 0.7 micrometers). The material exposed by the opening 14a mainly comprises a copper pad 16 (or a copper pad) having a thickness of between 0.03 micrometers and 1 micrometer (preferably between 0.03 micrometers and 0.7 micrometers) and the material is A sub-layer of gold is on the tantalum-containing metal layer (such as a tantalum layer or a tantalum nitride layer) and has a thickness of between 1 micrometer and 20 micrometers (preferably, the thickness is between 3 micrometers and 5 micrometers). Or a gold layer between 1 micrometer and 4 micrometers on the seed layer; or, the wire bonding pad 22 includes a thickness between 0.01 micrometers and 0.7 micrometers (preferably between 0.03 micrometers and 0.7 micrometers) A layer of germanium containing metal (such as a layer of germanium or a layer of tantalum nitride) is located on the opening 16a of the material which is mainly composed of copper pads 16 (or copper pads) and has a thickness of 0.03. a sub-layer of between 1 micron and 1 micron (preferably between 0.03 micron and 0.7 micron) and having a palladium-like metal layer (eg, a layer of germanium) Or a palladium nitride layer and a palladium layer having a thickness between 1 micrometer and 20 micrometers (preferably a thickness of between 3 micrometers to 5 micrometers or between 1 micrometer and 4 micrometers) Positioned on the seed layer; or, the wire bonding pad 22 includes a germanium-containing metal layer (such as a germanium layer or a layer) having a thickness of between 0.01 micrometers and 0.7 micrometers (preferably between 0.03 micrometers and 0.7 micrometers). The tantalum nitride layer is on the pad 16 (or copper pad) which is exposed on the opening 14a and has a thickness of between 0.03 micrometers and 1 micrometer (preferably between 0.03 micrometers and 0.7). a sub-layer of copper between the micro-layers and a copper-containing layer (such as a layer of germanium or nitrogen) a layer of copper having a thickness between 1 micrometer and 10 micrometers on the seed layer, a nickel layer having a thickness between 1 micrometer and 5 micrometers on the copper layer and a thickness layer A gold layer between 1 micrometer and 5 micrometers is on the nickel layer, and the total thickness of the nickel layer, the copper layer and the gold layer is between 1 micrometer and 20 micrometers, and the preferred thickness is Between 3 microns and 5 microns; or, the wire bond pad 22 comprises a layer of germanium containing metal (eg, a stack of between 0.01 microns and 0.7 microns thick) The layer or the tantalum nitride layer is located on the pad 16 (or copper pad) of the material mainly exposed by the opening 14a, and has a thickness of between 0.03 micrometers and 1 micrometer (preferably between 0.03). a sub-layer of copper between 0.7 micrometers and 0.7 micrometers and having a thickness of between 1 micrometer and 10 micrometers on a tantalum-containing metal layer (such as a tantalum layer or a tantalum nitride layer) a nickel layer on the seed layer having a thickness between 1 micrometer and 5 micrometers on the copper layer and a palladium layer having a thickness between 1 micrometer and 5 micrometers in the nickel layer , And the nickel layer, the total thickness of the copper-based layer and a palladium layer three between between 1 to 20 microns, and the thickness is preferably between 3 to 5 microns.

For example, the wire bonding pad 22 includes a titanium-containing metal layer (such as a titanium layer, a titanium nitride layer, or a titanium) having a thickness of between 0.01 micrometers and 0.7 micrometers (preferably between 0.03 micrometers and 0.7 micrometers). The material of the tungsten alloy layer exposed on the opening 14a mainly comprises a pad 16 (or aluminum pad) of aluminum, and has a thickness of between 0.03 micrometers and 1 micrometer (preferably between 0.03 micrometers and 0.7 micrometers). And a sub-layer of gold-based material on the titanium-containing metal layer (such as a titanium layer, a titanium nitride layer or a titanium-tungsten alloy layer) and the thickness a gold layer between 1 micrometer and 20 micrometers (preferably having a thickness between 3 micrometers and 5 micrometers or between 1 micrometer and 4 micrometers) on the seed layer; or The pad 22 comprises a titanium-containing metal layer (such as a titanium layer, a titanium nitride layer or a titanium-tungsten alloy layer) having a thickness of between 0.01 micrometers and 0.7 micrometers (preferably between 0.03 micrometers and 0.7 micrometers). The material exposed in the opening 14a mainly comprises a pad 16 (or aluminum pad) of aluminum, and has a thickness of between 0.03 micrometers and 1 micrometer (preferably between 0.03 micrometers and 0.7 micrometers). And a sub-layer of palladium is on the titanium-containing metal layer (such as a titanium layer, a titanium nitride layer or a titanium-tungsten alloy layer) and the thickness is between 1 micrometer and 20 micrometers (the preferred thickness is a palladium layer between 3 microns and 5 microns or between 1 micrometer and 4 microns is on the seed layer; alternatively, the wire bond pads 22 comprise between 0.01 microns and 0.7 microns thick ( a titanium-containing metal layer (such as a titanium layer, a titanium nitride layer or a titanium-tungsten alloy layer) preferably between 0.03 micrometers and 0.7 micrometers is exposed in the opening 14a. The material mainly comprises a sub-layer of copper on the pad 16 (or aluminum pad) of thickness, between 0.03 micrometers and 1 micrometer (preferably between 0.03 micrometers and 0.7 micrometers) and made of copper. a copper layer on the titanium-containing metal layer (such as a titanium layer, a titanium nitride layer or a titanium-tungsten alloy layer) having a thickness between 1 micrometer and 10 micrometers on the seed layer and having a thickness between A nickel layer between 1 micrometer and 5 micrometers is on the copper layer and a gold layer having a thickness between 1 micrometer and 5 micrometers is on the nickel layer, and the nickel layer, the copper layer and the gold layer are three The total thickness is between 1 micrometer and 20 micrometers, and the preferred thickness is between 3 micrometers and 5 micrometers; or the wire bonding pad 22 comprises a thickness between 0.01 micrometers and 0.7 micrometers (preferably Is between A titanium-containing metal layer (such as a titanium layer, a titanium nitride layer or a titanium-tungsten alloy layer) between 0.03 micrometers and 0.7 micrometers is exposed to the opening 14a and mainly comprises a pad 16 of aluminum (or a sub-layer of copper on the aluminum pad, having a thickness between 0.03 micrometers and 1 micrometer (preferably between 0.03 micrometers and 0.7 micrometers) and having a material of copper, such as a titanium layer, a layer of copper on a titanium nitride layer or a titanium-tungsten alloy layer having a thickness between 1 micrometer and 10 micrometers on the seed layer and a nickel layer between 1 micrometer and 5 micrometers thick A palladium layer on the copper layer and between 1 micrometer and 5 micrometers in thickness is on the nickel layer, and the total thickness of the nickel layer, the copper layer and the palladium layer is between 1 micrometer and 20 micrometers. The preferred thickness is between 3 microns and 5 microns.

For example, the wire bonding pad 22 includes a chrome layer having a thickness between 0.01 micrometers and 0.7 micrometers (preferably between 0.03 micrometers and 0.7 micrometers). The material exposed in the opening 14a mainly includes aluminum pads. a sub-layer of 16 (or referred to as an aluminum pad) having a thickness between 0.03 micrometers and 1 micrometer (preferably between 0.03 micrometers and 0.7 micrometers) and having a gold content on the chromium layer and thickness a gold layer between 1 micrometer and 20 micrometers (preferably having a thickness between 3 micrometers and 5 micrometers or between 1 micrometer and 4 micrometers) on the seed layer; or The pad 22 includes a chrome layer having a thickness between 0.01 micrometers and 0.7 micrometers (preferably between 0.03 micrometers and 0.7 micrometers). The material exposed in the opening 14a mainly comprises a pad 16 of aluminum (or a sub-layer of a material having a thickness of between 0.03 μm and 1 μm (preferably between 0.03 μm and 0.7 μm) and having a material palladium on the chromium layer and having a thickness of 1 Micron to 20 microns A palladium layer between (preferably a thickness of between 3 microns and 5 microns or between 1 micron and 4 microns) is on the seed layer; or the wire bond pad 22 comprises a thickness between A chrome layer of between 0.01 micrometers and 0.7 micrometers (preferably between 0.03 micrometers and 0.7 micrometers) is exposed on the opening 14a. The material mainly comprises aluminum pads 16 (or aluminum pads). a sub-layer of copper having a thickness between 0.03 micrometers and 1 micrometer (preferably between 0.03 micrometers and 0.7 micrometers) and having a thickness of between 1 micrometer and 10 micrometers. a layer of copper on the seed layer having a thickness between 1 micrometer and 5 micrometers on the copper layer and a gold layer having a thickness between 1 micrometer and 5 micrometers in the nickel layer The total thickness of the nickel layer, the copper layer and the gold layer is between 1 micrometer and 20 micrometers, and the preferred thickness is between 3 micrometers and 5 micrometers; or the wire bonding pad 22 comprises A chrome layer having a thickness between 0.01 micrometers and 0.7 micrometers (preferably between 0.03 micrometers and 0.7 micrometers) is exposed to the opening 14a. a pad layer 16 (or referred to as an aluminum pad) having a thickness between 0.03 micrometers and 1 micrometer (preferably between 0.03 micrometers and 0.7 micrometers) and a sub-layer of copper material is present in the chromium layer a layer of copper having a thickness between 1 micrometer and 10 micrometers on the seed layer, a nickel layer having a thickness between 1 micrometer and 5 micrometers on the copper layer and a thickness of 1 micron to A palladium layer between 5 microns is on the nickel layer, and the total thickness of the nickel layer, the copper layer and the palladium layer is between 1 micrometer and 20 micrometers, and the preferred thickness is between 3 micrometers. Between 5 microns.

For example, the wire bond pad 22 includes a germanium having a thickness between 0.01 microns and 0.7 microns (preferably between 0.03 microns and 0.7 microns). The metal layer (such as a tantalum layer or a tantalum nitride layer) is located on the opening 14a of the material mainly including the aluminum pad 16 (or aluminum pad), and the thickness is between 0.03 micrometers and 1 micrometer (more) Preferably, a sub-layer of gold is between 0.03 micrometers and 0.7 micrometers and is made of a base metal layer (such as a tantalum layer or a tantalum nitride layer) and a thickness of between 1 micrometer and 20 micrometers. (a preferred thickness is between 3 microns and 5 microns or between 1 micron and 4 microns) a gold layer on the seed layer; or, the wire bond pad 22 comprises a thickness of 0.01 microns A metal-containing layer (such as a tantalum layer or a tantalum nitride layer) between 0.7 micrometers (preferably between 0.03 micrometers and 0.7 micrometers) is exposed to the opening 14a and mainly comprises aluminum. a sub-layer of a pad 16 (or referred to as an aluminum pad) having a thickness between 0.03 micrometers and 1 micrometer (preferably between 0.03 micrometers and 0.7 micrometers) and having a palladium material (such as a tantalum layer or a tantalum nitride layer) and a thickness between 1 micron and 20 micron (preferably, the thickness is between 3 micrometers and 5 micrometers or between 1 micron) a palladium layer between 4 microns) is on the seed layer; alternatively, the wire bond pad 22 comprises a thickness between 0.01 microns and 0.7 microns (preferably between 0.03 microns and 0.7 microns) The bismuth-containing metal layer (such as a germanium layer or a tantalum nitride layer) is exposed on the opening 14a, and the material mainly includes the aluminum pad 16 (or aluminum pad) and has a thickness of between 0.03 micrometers and 1 micrometer. (preferably between 0.03 micrometers and 0.7 micrometers) and a sub-layer of copper material on the tantalum-containing metal layer (such as a tantalum layer or a tantalum nitride layer) having a thickness of between 1 micrometer and 10 micrometers A layer of copper between the layer of copper on the seed layer and having a thickness between 1 micrometer and 5 micrometers on the copper layer and a gold layer between 1 micrometer and 5 micrometers in thickness The nickel layer, and the total thickness of the nickel layer, the copper layer and the gold layer are between 1 micrometer and 20 micrometers, and the preferred thickness is between 3 micrometers and 5 micrometers; or The mat 22 includes a tantalum-containing metal layer (such as a tantalum layer or a tantalum nitride layer) having a thickness between 0.01 micrometers and 0.7 micrometers (preferably between 0.03 micrometers and 0.7 micrometers) exposed at the opening 14a. The material is mainly composed of a pad 16 (or aluminum pad) of aluminum, a thickness of between 0.03 micrometers and 1 micrometer (preferably between 0.03 micrometers and 0.7 micrometers) and a material of copper. A copper layer having a thickness between 1 micrometer and 10 micrometers on the germanium-containing metal layer (such as a germanium layer or a tantalum nitride layer) on the seed layer and having a thickness of 1 micrometer to 5 micrometers A nickel layer between the copper layer and a palladium layer having a thickness between 1 micrometer and 5 micrometers is on the nickel layer, and the total thickness of the nickel layer, the copper layer and the palladium layer is It is between 1 micrometer and 20 micrometers, and a preferred thickness is between 3 micrometers and 5 micrometers.

Then, after the wire bonding pad 22 is completed, one of the semiconductor wafers formed by the above steps is completed. Then, the semiconductor wafer is cut by dicing to form a plurality of semiconductor wafers 23 as shown in FIG.

Referring to FIGS. 5A and 5B, the present invention can form a wire bonding pad 22 having a thickness of between 1 micrometer and 20 micrometers (preferably, a thickness of between 3 micrometers and 5 micrometers). a metal protection cover 18, and the wire bonding pad 22 is used as a wire bonding joint for bonding a wire bonding wire, wherein the metal protective cover 18 is fastened to a pad 16 (for example, a copper pad) exposed by an opening 14a, and The metal protective cover 18 includes, for example, a ruthenium-containing metal layer (for example, a tantalum layer or a tantalum nitride layer) on the pad 16 (for example, a copper pad), and an aluminum-containing gold layer. a genus layer (for example, an aluminum layer or an aluminum alloy layer) is disposed on the ruthenium-containing metal layer; or the metal protection cover 18 includes an aluminum-containing metal layer (for example, an aluminum layer or an aluminum alloy layer) on the pad 16 (for example, copper pad). For the method of forming the wire bonding pad 22 on the metal protective cover 18, please refer to the description of the series of Fig. 6. In addition, in FIG. 5A, the wire bonding pads 22 are fastened on the entire upper surface of the metal protective cover 18 and on the protective layer 8 around the metal protective cover 18; in FIG. 5B, the wire bonding pads 22 are in the position On the upper surface of a portion of the metal protective cover 18. The description of the series of Fig. 6 of the present invention is described in the context of "the wire bonding pad 22 is located on the entire upper surface of the metal protective cover 18 and the protective layer 8 located around the metal protective cover 18", and is familiar with the technology. It can be implemented by means of the description of the series of Fig. 6, "the wire pad 22 is placed on the upper surface of the metal protection cover 18". Further, after the wire bonding pads 22 are formed, the semiconductor wafers are cut by dicing to form a plurality of semiconductor wafers 31 as shown in FIGS. 5A and 5B.

Referring to FIG. 6A, an adhesion/barrier layer 24 having a thickness between 0.01 micrometers and 0.7 micrometers (preferably between 0.03 micrometers and 0.7 micrometers) is formed on the protective layer 14 and the metal protective cover. 18, wherein the metal protective cover 18 is fastened on a pad 16 (ie, a copper pad) whose material mainly includes copper, and the metal protective cover 18 includes, for example, a ruthenium-containing metal layer (for example, a tantalum layer or a tantalum nitride layer). The material is mainly composed of a copper pad 16 and includes an aluminum-containing metal layer (for example, an aluminum layer or an aluminum alloy layer) on the germanium-containing metal layer, or the metal protective cover 18 is an aluminum-containing metal. The layer (for example, an aluminum layer or an aluminum alloy layer) is located on the pad 16 of the material mainly comprising copper, and the adhesion/barrier layer 24 is tied to the aluminum-containing metal layer (for example, an aluminum layer or an aluminum alloy). Layer). In addition, the material of the adhesion/barrier layer 24 includes titanium, titanium tungsten alloy, titanium nitride, chromium, tantalum, tantalum nitride or alloy of refractory metal.

For example, the adhesion/barrier layer 24 can be a titanium layer having a thickness between 0.01 microns and 0.7 microns (preferably between 0.03 microns and 0.7 microns) sputtered over the protective layer 14 and the metal protective cover 18. The metal protective cover 18 includes a ruthenium-containing metal layer (for example, a tantalum layer or a tantalum nitride layer) on the pad 16 mainly composed of copper and an aluminum-containing metal layer (for example, an aluminum layer or an aluminum layer). The alloy layer is located on the base metal-containing layer, or the metal protective cover 18 is an aluminum-containing metal layer (for example, an aluminum layer or an aluminum alloy layer) on the pad 16 of the material mainly comprising copper, and the titanium The layer is sputtered on the aluminum-containing metal layer (for example, an aluminum layer or an aluminum alloy layer); or the adhesion/barrier layer 24 may have a thickness of between 0.01 μm and 0.7 μm (preferably between 0.03 μm) A titanium-tungsten alloy layer of between 0.7 micrometers is sputtered onto the protective layer 14 and the metal protective cover 18, wherein the metal protective cover 18 comprises a germanium-containing metal layer (for example, a germanium layer or a tantalum nitride layer). On the pad 16 whose material mainly comprises copper and an aluminum-containing metal layer (for example, an aluminum layer or an aluminum alloy layer) The layer or the metal protective cover 18 is an aluminum-containing metal layer (for example, an aluminum layer or an aluminum alloy layer) on the pad 16 of the material mainly comprising copper, and the titanium-tungsten alloy layer is sputtered on the aluminum-containing layer. a metal layer (for example, an aluminum layer or an aluminum alloy layer); or, the adhesion/barrier layer 24 may have a thickness of between 0.01 micrometers and 0.7 micrometers (preferably between 0.03 micrometers and 0.7 micrometers). A titanium nitride layer is sputtered onto the protective layer 14 and the metal protective cover 18, wherein the metal protective cover 18 comprises a layer of germanium containing metal (eg, a layer of germanium or a layer of nitrogen) The ruthenium layer is located on the pad 16 mainly composed of copper and an aluminum-containing metal layer (for example, an aluminum layer or an aluminum alloy layer) on the ruthenium-containing metal layer, or the metal protection cover 18 is an aluminum-containing layer. A metal layer (such as an aluminum layer or an aluminum alloy layer) is located on the pad 16 of the material mainly comprising copper, and the titanium nitride layer is sputtered on the aluminum-containing metal layer (for example, an aluminum layer or an aluminum alloy layer). Or the adhesion/barrier layer 24 may be a tantalum nitride layer having a thickness between 0.01 micrometers and 0.7 micrometers (preferably between 0.03 micrometers and 0.7 micrometers) sputtered on the protective layer 14. And a metal protective cover 18, wherein the metal protective cover 18 comprises a ruthenium-containing metal layer (for example, a tantalum layer or a tantalum nitride layer) on the pad 16 mainly composed of copper and an aluminum-containing metal layer (for example, The aluminum layer or the aluminum alloy layer is located on the base metal layer, or the metal protective cover 18 is an aluminum-containing metal layer (for example, an aluminum layer or an aluminum alloy layer). The material is mainly composed of copper pads 16 . And the tantalum nitride layer is sputtered on the aluminum-containing metal layer (for example, an aluminum layer or an aluminum alloy layer); or the adhesion/barrier layer 24 can be A layer of germanium having a thickness between 0.01 micrometers and 0.7 micrometers (preferably between 0.03 micrometers and 0.7 micrometers) is sputtered onto the protective layer 14 and the metal protective cover 18, wherein the metal protective cover 18 comprises A ruthenium-containing metal layer (for example, a tantalum layer or a tantalum nitride layer) is disposed on the pad 16 mainly composed of copper and an aluminum-containing metal layer (for example, an aluminum layer or an aluminum alloy layer). The metal layer, or the metal protective cover 18 is an aluminum-containing metal layer (for example, an aluminum layer or an aluminum alloy layer) on the substrate 16 mainly comprising copper, and the germanium layer is sputtered on the aluminum-containing metal. a layer (for example, an aluminum layer or an aluminum alloy layer); or, the adhesion/barrier layer 24 may be a thickness of between 0.01 micrometers and 0.7 micrometers (preferably between 0.03 micrometers and 0.7 micrometers). Fire resistant gold The alloy layer is sputtered on the protective layer 14 and the metal protective cover 18, wherein the metal protective cover 18 comprises a ruthenium-containing metal layer (for example, a tantalum layer or a tantalum nitride layer) in the material of the material mainly comprising copper. And an aluminum-containing metal layer (for example, an aluminum layer or an aluminum alloy layer) is disposed on the base metal-containing layer, or the metal protective cover 18 is an aluminum-containing metal layer (for example, an aluminum layer or an aluminum alloy layer). Here, the material mainly comprises copper pads 16, and the refractory metal alloy layer is sputtered on an aluminum-containing metal layer (for example, an aluminum layer or an aluminum alloy layer).

Referring to Figure 6B, a sub-layer 26 having a sputter thickness between 0.03 microns and 1 micron (preferably between 0.03 microns and 0.7 microns) is on the adhesion/barrier layer 24. Alternatively, the seed layer 26 may be formed by evaporation, physical vapor deposition, or electroless plating. Since the seed layer 26 can facilitate the formation of the subsequent metal layer, the material of the seed layer 26 may vary depending on the material of the subsequent metal layer, such as when a metal layer of gold (Au) is electroplated on the seed layer 26. The material of the seed layer 26 is preferably gold; or, when the metal layer of copper (Cu) is plated on the seed layer 26, the material of the seed layer 26 is preferably copper; or, when the material is palladium When the metal layer of (palladium, Pd) is electroplated on the seed layer 26, the material of the seed layer 26 is preferably palladium.

For example, when the adhesion/barrier layer 24 is formed by sputtering in a titanium layer having a thickness between 0.01 micrometers and 0.7 micrometers (preferably between 0.03 micrometers and 0.7 micrometers), the seed layer 26 A gold layer having a thickness of between 0.03 micrometers and 1 micrometer (preferably between 0.03 micrometers and 0.7 micrometers) may be sputtered onto the titanium layer; or, when the adhesion/barrier layer 24 is The thickness of the sputtering method is between 0.01 micrometers and 0.7 micrometers (preferably When a titanium-tungsten alloy layer is between 0.03 micrometers and 0.7 micrometers, the seed layer 24 may have a thickness between 0.03 micrometers and 1 micrometer (preferably between 0.03 micrometers and 0.7 micrometers). A gold layer is sputtered onto the titanium tungsten alloy layer; or, when the adhesion/barrier layer 26 is formed by sputtering, the thickness is between 0.01 micrometers and 0.7 micrometers (preferably between 0.03 micrometers and When a layer of titanium nitride is between 0.7 micrometers, the seed layer 24 may be a gold layer having a thickness of between 0.03 micrometers and 1 micrometer (preferably between 0.03 micrometers and 0.7 micrometers). On the titanium nitride layer; or, when the adhesion/barrier layer 24 is formed by sputtering, the thickness is between 0.01 micrometers and 0.7 micrometers (preferably between 0.03 micrometers and 0.7 micrometers). In the case of a chrome layer, the seed layer 26 may be a gold layer having a thickness of between 0.03 micrometers and 1 micrometer (preferably between 0.03 micrometers and 0.7 micrometers) sputtered onto the chromium layer; or, when adhered The barrier layer 24 is formed by sputtering to a thickness of between 0.01 micrometers and 0.7 micrometers (preferably between 0.03 micrometers and 0.7 micrometers). In the tantalum nitride layer, the seed layer 26 may be a gold layer having a thickness of between 0.03 micrometers and 1 micrometer (preferably between 0.03 micrometers and 0.7 micrometers) sputtered onto the tantalum nitride layer; or That is, when the adhesion/barrier layer 24 is formed by sputtering in a thickness of between 0.01 micrometers and 0.7 micrometers (preferably between 0.03 micrometers and 0.7 micrometers), the seed layer 26 A gold layer having a thickness of between 0.03 micrometers and 1 micrometer (preferably between 0.03 micrometers and 0.7 micrometers) may be sputtered onto the germanium layer; or, when the adhesion/barrier layer 24 is When the sputtering method forms a refractory metal alloy layer having a thickness of between 0.01 micrometers and 0.7 micrometers (preferably between 0.03 micrometers and 0.7 micrometers), the seed layer 26 can A gold layer having a thickness of between 0.03 micrometers and 1 micrometer (preferably between 0.03 micrometers and 0.7 micrometers) is sputtered onto the refractory metal alloy layer.

For example, when the adhesion/barrier layer 24 is formed by sputtering in a titanium layer having a thickness between 0.01 micrometers and 0.7 micrometers (preferably between 0.03 micrometers and 0.7 micrometers), the seed layer 26 A copper layer having a thickness of between 0.03 micrometers and 1 micrometer (preferably between 0.03 micrometers and 0.7 micrometers) may be sputtered onto the titanium layer; or, when the adhesion/barrier layer 24 is When the sputtering method forms a titanium-tungsten alloy layer having a thickness of between 0.01 micrometers and 0.7 micrometers (preferably between 0.03 micrometers and 0.7 micrometers), the seed layer 24 may have a thickness of 0.03 micrometers to 1 A copper layer between the micrometers (preferably between 0.03 micrometers and 0.7 micrometers) is sputtered onto the titanium-tungsten alloy layer; or, when the adhesion/barrier layer 26 is formed by sputtering When a titanium nitride layer is between 0.01 micrometers and 0.7 micrometers (preferably between 0.03 micrometers and 0.7 micrometers), the seed layer 24 may have a thickness between 0.03 micrometers and 1 micrometer (preferably a copper layer between 0.03 microns and 0.7 microns is sputtered onto the titanium nitride layer; or, when the adhesion/barrier layer 24 is sputtered When a chromium layer having a thickness of between 0.01 micrometers and 0.7 micrometers (preferably between 0.03 micrometers and 0.7 micrometers) is formed, the seed layer 26 may have a thickness of between 0.03 micrometers and 1 micrometer (compared to a copper layer of between 0.03 micrometers and 0.7 micrometers is sputtered onto the chromium layer; or, when the adhesion/barrier layer 24 is sputtered, the thickness is between 0.01 micrometers and 0.7 micrometers. The seed layer 26 may have a thickness between 0.03 microns and 1 micron (preferably between 0.03 microns and 0.7) between the layers (preferably between 0.03 microns and 0.7 microns). A copper layer between the micrometers is sputtered on the tantalum nitride layer; or, when the adhesion/barrier layer 24 is formed by sputtering, the thickness is between 0.01 micrometers and 0.7 micrometers (preferably When a layer of between 0.03 microns and 0.7 microns is used, the seed layer 26 may be a copper layer having a thickness of between 0.03 microns and 1 micron (preferably between 0.03 microns and 0.7 microns). Plating on the ruthenium layer; or, when the adhesion/barrier layer 24 is formed by sputtering, the thickness is between 0.01 micrometers and 0.7 micrometers (preferably between 0.03 micrometers and 0.7 micrometers). In the case of a refractory metal alloy layer, the seed layer 26 may be a copper layer having a thickness of between 0.03 microns and 1 micron (preferably between 0.03 microns and 0.7 microns) sputtered onto the refractory metal alloy layer.

For example, when the adhesion/barrier layer 24 is formed by sputtering in a titanium layer having a thickness between 0.01 micrometers and 0.7 micrometers (preferably between 0.03 micrometers and 0.7 micrometers), the seed layer 26 A palladium layer having a thickness of between 0.03 micrometers and 1 micrometer (preferably between 0.03 micrometers and 0.7 micrometers) may be sputtered onto the titanium layer; or, when the adhesion/barrier layer 24 is When the sputtering method forms a titanium-tungsten alloy layer having a thickness of between 0.01 micrometers and 0.7 micrometers (preferably between 0.03 micrometers and 0.7 micrometers), the seed layer 24 may have a thickness of 0.03 micrometers to 1 A palladium layer between the micrometers (preferably between 0.03 micrometers and 0.7 micrometers) is sputtered onto the titanium-tungsten alloy layer; or, when the adhesion/barrier layer 26 is formed by sputtering When a titanium nitride layer is between 0.01 micrometers and 0.7 micrometers (preferably between 0.03 micrometers and 0.7 micrometers), the seed layer 24 may have a thickness between 0.03 micrometers and 1 micrometer (preferably a palladium layer between 0.03 microns and 0.7 microns is sputtered onto the titanium nitride layer; or, when adhered/ When the barrier layer 24 is formed by sputtering, a chromium layer having a thickness of between 0.01 micrometers and 0.7 micrometers (preferably between 0.03 micrometers and 0.7 micrometers), the seed layer 26 may have a thickness between A palladium layer between 0.03 micrometers and 1 micrometer (preferably between 0.03 micrometers and 0.7 micrometers) is sputtered onto the chromium layer; or, when the adhesion/barrier layer 24 is formed by sputtering When the thickness is between 0.01 micrometers and 0.7 micrometers (preferably between 0.03 micrometers and 0.7 micrometers) of the tantalum nitride layer, the seed layer 26 may have a thickness of between 0.03 micrometers and 1 micrometer (compared to a palladium layer which is preferably between 0.03 micrometers and 0.7 micrometers is sputtered on the tantalum nitride layer; or, when the adhesion/barrier layer 24 is formed by sputtering, the thickness is between 0.01 micrometers and When a layer of between 0.7 microns (preferably between 0.03 microns and 0.7 microns) is used, the seed layer 26 may have a thickness between 0.03 microns and 1 micron (preferably between 0.03 microns and 0.7 microns). a palladium layer is sputtered onto the ruthenium layer; or, when the adhesion/barrier layer 24 is sputtered, the thickness is between 0.01 microns When a refractory metal alloy layer is between 0.7 microns (preferably between 0.03 microns and 0.7 microns), the seed layer 26 may have a thickness between 0.03 microns and 1 micron (preferably between 0.03 microns and A palladium layer between 0.7 microns is sputtered onto this refractory metal alloy layer.

Referring to FIG. 6C, a photoresist layer 28 having a spin-on coating thickness between 1 micrometer and 25 micrometers is disposed on the seed layer 26, wherein the preferred thickness of the photoresist layer 28 is between The photoresist layer 28 is, for example, between a micron and a 10 micron, and the photoresist layer 28 is, for example, a positive-type photoresist layer. Next, referring to FIG. 6D, the photoresist layer 28 is patterned by an exposure and development process to form a photoresist layer opening 28a at the photoresist. The seed layer 26 is positioned within the layer 28 and over the metal protective cover 18, wherein in the process of patterning the photoresist layer 28, for example, a one-time (1X) stepper or a double (1X) is utilized. The exposure is performed by a contact aligner. In addition, after development, the seed layer 26 exposed by the photoresist layer opening 28a may be cleaned by using a plasma (for example, a plasma containing oxygen ions or a plasma containing a fluoride ion concentration of less than 200 PPM and oxygen ions) to remove the seed. A photoresist residue or other foreign matter on the upper surface of layer 26.

Referring to FIG. 6E, a metal layer 30 having a thickness between 1 micrometer and 20 micrometers is formed on the seed layer 26 exposed by the photoresist layer opening 28a, wherein the preferred thickness of the metal layer 30 is The material is between 3 microns and 5 microns, and the material of the metal layer 30 comprises gold, copper, nickel or palladium.

For example, the metal layer 30 may be a gold layer plating having a thickness between 1 micrometer and 20 micrometers (preferably a thickness of between 3 micrometers to 5 micrometers or between 1 micrometer and 4 micrometers). The photoresist layer opening 28a is exposed on the gold seed layer 26; alternatively, the metal layer 30 may have a thickness between 1 micrometer and 20 micrometers (preferably, the thickness is between 3 micrometers and 5 micrometers). Or a palladium layer between 1 micrometer and 4 micrometers is plated on the seed layer 26 of palladium exposed by the photoresist layer opening 28a; or the metal layer 30 may have a thickness of 1 micrometer to 10 A copper layer between the micrometers is plated on the copper seed layer 26 exposed by the photoresist layer opening 28a, and a nickel layer having a thickness between 1 micrometer and 5 micrometers is plated on the copper layer and the thickness is A gold layer between 1 micrometer and 5 micrometers is electroplated on the nickel layer, wherein the total thickness of the copper layer, the nickel layer and the gold layer is between 1 micrometer and 20 micrometers, and the preferred thickness is Between 3 microns and 5 microns; Alternatively, the metal layer 30 may be a copper layer having a thickness between 1 micrometer and 13 micrometers plated on the copper seed layer 26 exposed by the photoresist layer opening 28a and having a thickness between 1 micrometer and 5 micrometers. A nickel layer is electroplated on the copper layer and a gold layer having a thickness of between 0.05 micrometers and 2 micrometers is electrolessly plated on the nickel layer, wherein the total thickness of the copper layer, the nickel layer and the gold layer is Between 1 micrometer and 20 micrometers, and a preferred thickness is between 3 micrometers and 5 micrometers; or, the metal layer 30 may be a copper layer having a thickness between 1 micrometer and 10 micrometers. A nickel layer having a thickness of between 1 micrometer and 5 micrometers on the copper seed layer 26 exposed by the layer opening 28a is electroplated on the copper layer and a palladium having a thickness of between 1 micrometer and 5 micrometers. Layer plating on the nickel layer, wherein the total thickness of the copper layer, the nickel layer and the palladium layer is between 1 micrometer and 20 micrometers, and the preferred thickness is between 3 micrometers and 5 micrometers; or The metal layer 30 may be a copper layer having a thickness between 1 micrometer and 13 micrometers. The material exposed by the photoresist layer opening 28a is exposed. A nickel layer on the copper seed layer 26 having a thickness between 1 micrometer and 5 micrometers is electrolessly plated on the copper layer and a palladium layer having a thickness between 0.05 micrometers and 2 micrometers is electrolessly plated on the nickel layer. The total thickness of the copper layer, the nickel layer and the palladium layer is between 1 micrometer and 20 micrometers, and the preferred thickness is between 3 micrometers and 5 micrometers.

Referring to FIG. 6F, after the metal layer 30 is formed, the photoresist layer 28 is subsequently removed, for example, by removing the photoresist layer 28 using an organic solvent containing an amide. In addition, after removing the photoresist layer 28, the metal layer may be cleaned first by using a plasma (for example, a plasma containing oxygen ions or a plasma containing a fluoride ion concentration of less than 200 PPM and oxygen ions). 30 and seed layer 26, whereby the photoresist residue on the upper surface of the metal layer 30 and the upper surface of the seed layer 26 is removed.

Continuing to refer to FIG. 6G, the seed layer 26 and the adhesion/barrier layer 24 that are not under the metal layer 30 are sequentially removed. The manner of removing the seed layer 26 and the adhesion/barrier layer 24 not under the metal layer 30 is, for example, etching, and the etching method can be further divided into dry etching and wet etching, and dry etching includes chemistry. Plasma etching, splash etching and chemical gas etching. For example, in the wet etching, when the adhesion/barrier layer 24 is a titanium-tungsten alloy, it can be removed by etching using a solution containing hydrogen peroxide, and when the adhesion/barrier layer 24 is titanium, it can be removed by using a solution containing a cyanofluoric acid. When the seed layer 26 is gold, it can be removed by etching using an iodine-containing etching solution (for example, an etching solution containing potassium iodide), and when the seed layer 26 is copper, etching using ammonium hydroxide (NH ₄ OH) can be utilized. Liquid etching removal; in dry etching, when the adhesion/barrier layer 24 is titanium or titanium tungsten alloy, it can be removed by plasma etching using chlorine or by reactive ion etching (RIE) process etching, and seed When layer 26 is gold, it can be removed by ion milling or by argon etching.

Therefore, the present invention can form a wire bonding pad 22 on a metal protective cover 18, and the wire bonding pad 22 is formed by an adhesive/barrier layer 24, a sub-layer 26 on the adhesion/barrier layer 24. A metal layer 30 is formed on the seed layer 26. Moreover, the material of the wire bonding pad 22 includes titanium, titanium tungsten alloy, titanium nitride, chromium, tantalum nitride, gold, copper, nickel or palladium. Therefore, the wire bonding pad 22 of the present invention may be in the form described below by the above-described manner of forming the wire bonding pads 22.

For example, the wire bonding pad 22 includes a titanium-containing metal layer (such as a titanium layer, a titanium nitride layer, or a titanium) having a thickness of between 0.01 micrometers and 0.7 micrometers (preferably between 0.03 micrometers and 0.7 micrometers). a tungsten alloy layer) on the metal protective cover 18, having a thickness between 0.03 micrometers and 1 micrometer (preferably between 0.03 micrometers and 0.7 micrometers) and a sub-layer of gold material containing titanium metal a layer (such as a titanium layer, a titanium nitride layer or a titanium tungsten alloy layer) and a thickness between 1 micrometer and 20 micrometers (preferably a thickness of between 3 micrometers to 5 micrometers or between 1) a gold layer between micrometers and 4 micrometers is on the seed layer, wherein the metal protective cover 18 is fastened on the pad 16 (or copper pad) whose material is mainly exposed by the opening 14a; or The wire bonding pad 22 includes a titanium-containing metal layer (such as a titanium layer, a titanium nitride layer or a titanium tungsten) having a thickness of between 0.01 micrometers and 0.7 micrometers (preferably between 0.03 micrometers and 0.7 micrometers). The alloy layer) is on the metal protective cover 18 and has a thickness between 0.03 micrometers and 1 micrometer (preferably between 0.03 micrometers and 0.7 micrometers) and a sub-layer of palladium on the titanium-containing metal layer (such as a titanium layer, a titanium nitride layer or a titanium-tungsten alloy layer) and a thickness of between 1 micrometer and 20 micrometers (the preferred thickness is a palladium layer between 3 micrometers to 5 micrometers or between 1 micrometer and 4 micrometers is on the seed layer, wherein the metal protective cover 18 is located at the opening 14a and the material is mainly composed of copper. a pad 16 (or referred to as a copper pad); or, the wire pad 22 includes a titanium-containing metal layer having a thickness between 0.01 micrometers and 0.7 micrometers (preferably between 0.03 micrometers and 0.7 micrometers) ( For example, a titanium layer, a titanium nitride layer or a titanium tungsten alloy layer is located on the metal protective cover 18 and has a thickness of between 0.03 micrometers and 1 micrometer (preferably between 0.03 micrometers and 0.7 micrometers). a sub-layer between the micrometers and made of copper on the titanium-containing metal layer (such as a titanium layer, a titanium nitride layer or a titanium-tungsten alloy layer) having a thickness between 1 micrometer and 10 micrometers a layer of nickel on the seed layer having a thickness between 1 micrometer and 5 micrometers on the copper layer and a gold layer having a thickness between 1 micrometer and 5 micrometers on the nickel layer And the total thickness of the nickel layer, the copper layer and the gold layer is between 1 micrometer and 20 micrometers, and the preferred thickness is between 3 micrometers and 5 micrometers, wherein the metal protective cover 18 is in the The material exposed by the opening 14a mainly comprises a copper pad 16 (or referred to as a copper pad); or the wire bonding pad 22 comprises a thickness between 0.01 micrometers and 0.7 micrometers (preferably between 0.03 micrometers and 0.7 micrometers). A titanium-containing metal layer (such as a titanium layer, a titanium nitride layer or a titanium-tungsten alloy layer) between the micrometers is located on the metal protective cover 18 and has a thickness of between 0.03 micrometers and 1 micrometer (preferably a sub-layer of copper between 0.03 micrometers and 0.7 micrometers and having a material of copper on the titanium-containing metal layer (such as a titanium layer, a titanium nitride layer or a titanium-tungsten alloy layer) a layer of copper having a thickness between 1 micrometer and 10 micrometers on the seed layer, a nickel layer having a thickness between 1 micrometer and 5 micrometers on the copper layer and a thickness ranging from 1 micrometer to 5 micrometers A palladium layer is on the nickel layer, and the total thickness of the nickel layer, the copper layer and the palladium layer is between 1 micrometer and 20 micrometers, and the preferred thickness is between 3 micrometers and 5 micrometers. Between the micrometers, the metal protective cover 18 is fastened to the pad 16 (or copper pad) whose material is mainly exposed by the opening 14a.

For example, the wire bonding pad 22 includes a chrome layer having a thickness between 0.01 micrometers and 0.7 micrometers (preferably between 0.03 micrometers and 0.7 micrometers) on the metal protective cover 18 and having a thickness of 0.03 micrometers to 1 Between microns (compared Preferably, a sub-layer of gold is between 0.03 micrometers and 0.7 micrometers and is made of gold and has a thickness between 1 micrometer and 20 micrometers (preferably, the thickness is between 3 micrometers and 5 micrometers). A gold layer between or between 1 micrometer and 4 micrometers is on the seed layer, wherein the metal protective cover 18 is fastened to the opening 14a and the material mainly includes the copper pad 16 (or Or a wire pad 22 comprising a chrome layer having a thickness between 0.01 micrometers and 0.7 micrometers (preferably between 0.03 micrometers and 0.7 micrometers) on the metal protective cover 18, thickness a sub-layer of between 0.03 micrometers and 1 micrometer (preferably between 0.03 micrometers and 0.7 micrometers) and having a palladium material on the chromium layer and having a thickness between 1 micrometer and 20 micrometers (compared to a palladium layer having a thickness of between 3 micrometers and 5 micrometers or between 1 micrometer and 4 micrometers is on the seed layer, wherein the metal protective cover 18 is exposed to the opening 14a. The material mainly includes a copper pad 16 (or referred to as a copper pad); or, the wire bonding pad 22 includes a thickness between 0.01 micrometers and 0.7 micrometers ( a chrome layer preferably between 0.03 microns and 0.7 microns is on the metal protective cover 18 and has a thickness between 0.03 microns and 1 micron (preferably between 0.03 microns and 0.7 microns) and a nickel layer having a thickness of between 1 micrometer and 5 micrometers on the seed layer and a copper layer having a thickness of between 1 micrometer and 10 micrometers on the chromium layer. A gold layer on the copper layer and between 1 micrometer and 5 micrometers in thickness is on the nickel layer, and the total thickness of the nickel layer, the copper layer and the gold layer is between 1 micrometer and 20 micrometers. The preferred thickness is between 3 micrometers and 5 micrometers, wherein the metal protective cover 18 is exposed to the opening 14a. The material mainly includes the copper pad 16 (or copper pad). Or; the wire bonding pad 22 includes a chrome layer having a thickness between 0.01 micrometers and 0.7 micrometers (preferably between 0.03 micrometers and 0.7 micrometers) on the metal protective cover 18 and having a thickness of 0.03 micrometers. a sub-layer of between 1 micron (preferably between 0.03 micron and 0.7 micron) and having a copper layer on the chromium layer with a thickness between 1 micrometer and 10 micrometers a layer of nickel on the seed layer having a thickness between 1 micrometer and 5 micrometers on the copper layer and a palladium layer having a thickness between 1 micrometer and 5 micrometers on the nickel layer, and a nickel layer The total thickness of the copper layer and the palladium layer is between 1 micrometer and 20 micrometers, and the preferred thickness is between 3 micrometers and 5 micrometers, wherein the metal protective cover 18 is exposed at the opening 14a. The material is mainly composed of copper pads 16 (or copper pads).

For example, the wire bonding pad 22 includes a germanium-containing metal layer (eg, a germanium layer or a tantalum nitride layer) having a thickness of between 0.01 micrometers and 0.7 micrometers (preferably between 0.03 micrometers and 0.7 micrometers). A sub-layer on the metal protective cover 18 having a thickness between 0.03 micrometers and 1 micrometer (preferably between 0.03 micrometers and 0.7 micrometers) and having a gold-based layer (eg, a tantalum layer) a layer or a tantalum nitride layer and a gold having a thickness between 1 micrometer and 20 micrometers (preferably a thickness of between 3 micrometers to 5 micrometers or between 1 micrometer and 4 micrometers) The layer is on the seed layer, wherein the metal protective cover 18 is fastened on the pad 16 (or copper pad) whose material is mainly exposed by the opening 14a; or the wire bonding pad 22 comprises a thickness of 0.01. A germanium-containing metal layer (for example, a germanium layer or a tantalum nitride layer) between micrometers to 0.7 micrometers (preferably between 0.03 micrometers and 0.7 micrometers) is on the metal protective cover 18 and has a thickness of 0.03. Between microns and 1 micron (preferably a sub-layer of between 0.03 micrometers and 0.7 micrometers and having a palladium material on the tantalum-containing metal layer (eg, a tantalum layer or a tantalum nitride layer) and having a thickness between 1 micrometer and 20 micrometers ( A palladium layer having a preferred thickness of between 3 micrometers and 5 micrometers or between 1 micrometer and 4 micrometers is on the seed layer, wherein the metal protective cover 18 is exposed at the opening 14a. The material mainly includes a copper pad 16 (or referred to as a copper pad); or, the wire bonding pad 22 includes a thickness between 0.01 micrometers and 0.7 micrometers (preferably between 0.03 micrometers and 0.7 micrometers). A germanium-containing metal layer (eg, a germanium layer or a tantalum nitride layer) is on the metal protective cover 18 and has a thickness between 0.03 micrometers and 1 micrometer (preferably between 0.03 micrometers and 0.7 micrometers) and a sub-layer of copper material on the ruthenium-containing metal layer (for example, a tantalum layer or a tantalum nitride layer), a copper layer having a thickness between 1 micrometer and 10 micrometers on the seed layer, and a thickness a layer of nickel between 1 micrometer and 5 micrometers on the copper layer and a gold layer having a thickness between 1 micrometer and 5 micrometers on the nickel layer, and nickel The total thickness of the layer, the copper layer and the gold layer is between 1 micrometer and 20 micrometers, and the preferred thickness is between 3 micrometers and 5 micrometers, wherein the metal protective cover 18 is located at the opening 14a. The exposed material mainly comprises a copper pad 16 (or referred to as a copper pad); or, the wire bonding pad 22 comprises a thickness between 0.01 micrometers and 0.7 micrometers (preferably between 0.03 micrometers and 0.7 micrometers). a germanium-containing metal layer (eg, a germanium layer or a tantalum nitride layer) on the metal protective cover 18 having a thickness between 0.03 micrometers and 1 micrometer (preferably between 0.03 micrometers and 0.7 micrometers) And a sub-layer of copper material on the base metal layer (for example, a tantalum layer or a tantalum nitride layer) having a thickness of between 1 micrometer and 10 micrometers in the seed layer a layer of nickel having a thickness between 1 micrometer and 5 micrometers on the copper layer and a palladium layer having a thickness between 1 micrometer and 5 micrometers on the nickel layer, and a nickel layer and a copper layer The total thickness of the palladium layer is between 1 micrometer and 20 micrometers, and the preferred thickness is between 3 micrometers and 5 micrometers, wherein the metal protective cover 18 is located at the opening 14a. It mainly consists of copper pads 16 (or copper pads).

Then, after the wire bonding pad 22 is completed, one of the semiconductor wafers formed by the above steps is completed. Further, the semiconductor wafer is diced to form a plurality of semiconductor wafers 31 as shown in FIG. 5A.

Referring to Figures 7A and 7B, the present invention can form a metal line 32 on a polymer layer 34 and connect the pads 16 (e.g., aluminum pads or copper pads) through the polymer layer openings 34a. The layer 34 is located on the protective layer 14, and an opening 34a in the polymer layer 34 exposes a pad 16 (for example, an aluminum pad or a copper pad) exposed by an opening 14a, and the opening 34a may be A pad 16 is exposed and the polymer layer 34 also covers a portion of the pad 34 (as shown in FIG. 7A), or the opening 34a exposes all of the upper surface of a pad 16 and is exposed to the pad. The upper surface of the protective layer 14 around 16 (as shown in Fig. 7B).

The polymer layer 34 is, for example, selected from the group consisting of polyimine (PI), epoxy, phenylcyclobutene (BCB), polyurethane, polyparaxylene polymer, solder mask material, and elastomer. One of the (elastomer) or porous dielectric materials, and the thickness of the polymer layer 34 is, for example, between 3 microns and 25 microns. For example, the polymer layer 34 may be a polyiminoimine layer having a thickness between 3 microns and 25 microns on the protective layer 14 and in the polyimide layer. One of the openings exposes a pad 16 (eg, an aluminum pad or a copper pad); alternatively, the polymer layer 34 may be an epoxy layer having a thickness between 3 microns and 25 microns on the protective layer 14, and Opening a pad 16 (eg, an aluminum pad or a copper pad) in one of the openings in the epoxy layer; or, the polymer layer 34 may be a layer of phenylcyclobutene having a thickness between 3 microns and 25 microns. An opening in the protective layer 14 and located in the phenylcyclobutene layer exposes a pad 16 (e.g., an aluminum pad or a copper pad). Further, the manner in which the polymer layer 34 is formed includes spin coating, press bonding, or screen printing.

The material of the metal line 32 includes gold, copper, nickel or palladium, and the manner of forming the metal line 32 includes a sputtering process, an electroplating process or an electroless plating process. For example, metal line 32 includes an adhesion/barrier layer sputter deposited between 0.01 microns and 0.7 microns (preferably between 0.03 microns and 0.7 microns) formed on polymer layer 34 and opening 34a. Sub-layer sputtering of exposed pads 16 (eg, aluminum pads or copper pads) having a thickness between 0.03 microns and 1 micron (preferably between 0.03 microns and 0.7 microns) and a gold material A gold layer formed on the adhesion/barrier layer and having a thickness of between 1 micrometer and 30 micrometers is formed on the seed layer, wherein the material of the adhesion/barrier layer comprises titanium, titanium tungsten alloy, titanium nitride, chromium Or tantalum nitride, and the preferred thickness of the gold layer is between 2 microns and 20 microns; or the metal line 32 comprises a thickness between 0.01 microns and 0.7 microns (preferably between 0.03 microns and 0.7) An adhesion/barrier layer sputtering between the micrometers is formed on the polymer layer 34 and the pads 16 (e.g., aluminum pads or copper pads) exposed by the openings 34a, having a thickness of between 0.03 micrometers and 1 micrometer. A sub-layer sputtering of between (preferably between 0.03 micrometers and 0.7 micrometers) and having a material of copper is formed by electroplating a copper layer formed on the adhesion/barrier layer and having a thickness of between 1 micrometer and 20 micrometers. A nickel layer plating on the seed layer and having a thickness between 1 micrometer and 10 micrometers is formed on the copper layer and a gold layer having a thickness of between 0.01 micrometers and 5 micrometers is formed on the nickel layer, wherein the adhesion/ The material of the barrier layer comprises titanium, titanium tungsten alloy, titanium nitride, chromium or tantalum nitride; or the metal line 32 comprises a thickness between 0.01 micrometers and 0.7 micrometers (preferably between 0.03 micrometers and 0.7 micrometers). An adhesion/barrier layer sputtering is formed on the polymer layer 34 and the pad 16 (for example, an aluminum pad or a copper pad) exposed by the opening 34a, and has a thickness of between 0.03 micrometers and 1 micrometer (more) Preferably, a sub-layer sputtering of between 0.03 micrometers and 0.7 micrometers and having a material of copper is formed on the adhesion/barrier layer, and a copper layer having a thickness of between 1 micrometer and 20 micrometers is electroplated to form a seed layer. A nickel layer having a thickness between 1 micrometer and 10 micrometers is formed on the copper layer and has a thickness of 0.02 A gold layer of electroless plating between meters and 2 microns is formed on the nickel layer, wherein the material of the adhesion/barrier layer comprises titanium, titanium tungsten alloy, titanium nitride, chromium or tantalum nitride; or the metal line 32 includes thickness An adhesion/barrier layer sputtering between 0.01 microns and 0.7 microns (preferably between 0.03 microns and 0.7 microns) is formed on the polymer layer 34 and the pads 16 exposed by the openings 34a ( For example, an aluminum pad or a copper pad, a sub-layer sputtering of a thickness of between 0.03 micrometers and 1 micrometer (preferably between 0.03 micrometers and 0.7 micrometers) and a material of copper is formed on the adhesion/barrier layer. a copper layer formed on the seed layer and having a thickness between 1 micrometer and 20 micrometers is formed on the seed layer, and a nickel layer having a thickness of between 1 micrometer and 10 micrometers is plated on the copper layer and A palladium layer having a thickness of between 0.01 micrometers and 5 micrometers is electroplated on the nickel layer, wherein the material of the adhesion/barrier layer comprises titanium, titanium tungsten alloy, titanium nitride, chromium or tantalum nitride; or, metal lines 32 includes an adhesion/barrier layer sputter having a thickness between 0.01 microns and 0.7 microns (preferably between 0.03 microns and 0.7 microns) formed on the polymer layer 34 and exposed by the opening 34a. A sub-layer sputtering of a pad 16 (eg, an aluminum pad or a copper pad) having a thickness between 0.03 micrometers and 1 micrometer (preferably between 0.03 micrometers and 0.7 micrometers) and a material of copper is formed on the adhesion/ A copper layer on the barrier layer having a thickness between 1 micrometer and 20 micrometers is plated on the seed layer, and a nickel layer having a thickness of between 1 micrometer and 10 micrometers is plated on the copper layer and the thickness is between A palladium layer between 0.05 micrometers and 2 micrometers is electrolessly plated on the nickel layer, wherein the material of the adhesion/barrier layer comprises titanium, titanium tungsten alloy, titanium nitride, chromium or tantalum nitride. In addition, the metal line 32 includes at least one wire contact as a bonding wire. For example, the metal wire 32 includes a first wire bonding contact 32a and a second wire bonding contact 32b. The first wire bonding contact is viewed from a top perspective view. The position of 32a is above the pad 16 to which the metal line 32 is connected, and the position of the second wire contact 32b is different from the position of the pad 16 to which the metal line 32 is connected. Therefore, the present invention can be used in subsequent processes according to requirements. Selecting to engage a wire conductor (such as a gold wire) to the first wire contact 32a, joining a wire conductor (such as a gold wire) to the second wire contact 32b, or respectively bonding a wire conductor (such as a gold wire) to the first One line contact 32a and second line contact 32b.

Next, after the metal lines 32 are formed, the semiconductor wafers are diced to form a plurality of semiconductor wafers 36.

Referring to FIGS. 7C and 7D, the present invention may also form a polymer layer 38 on the metal line 32 and the polymer layer after forming the metal line 32 (as shown in FIGS. 7A and 7B). At least one opening 38a in the polymer layer 38 exposes the metal line 32, and the position of the metal line 32 exposed by the opening 38a may be different from that of the metal line 32, as viewed from a top perspective view. The position of the pad 16 is such that the metal line 32 exposed by the opening 38a serves as a wire bonding contact for bonding the wire bonding wire. For example, the two openings 38a respectively expose a first wire bonding point 32a and a second wire of a metal wire 32. The wire bonding contact 32b is viewed from a top perspective view, the position of the first wire bonding contact 32a is above the pad 16 to which the metal wire 32 is connected, and the position of the second wire bonding contact 32b is different from the metal wire 32. The position of the connection pad 16 is connected. Therefore, the present invention can selectively engage a wire bonding wire (for example, a gold wire) to the first wire bonding contact 32a and a wire bonding wire (such as a gold wire) to the second bonding wire in a subsequent process. The contacts 32b are respectively connected to a wire conductor ( The gold wire) to the first contact point 32a and the wire contacts the second wire 32b.

The polymer layer 38 is, for example, selected from the group consisting of polyimine (PI), epoxy, phenylcyclobutene (BCB), polyurethane, polyparaxylene polymer, solder mask material, and elastomer. One of the (elastomer) or porous dielectric materials, and the thickness of the polymer layer 38 is, for example, between 3 microns and 25 microns. For example, the polymer layer 38 can be a layer of polyamidene having a thickness between 3 microns and 25 microns on the metal line 32, and the opening in the polyimine layer exposes the gold of the metal line 32. a layer or a palladium layer; alternatively, the polymer layer 38 may be an epoxy having a thickness between 3 microns and 25 microns The resin layer is on the metal line 32, and one of the openings in the epoxy layer exposes the gold or palladium layer of the metal line 32; alternatively, the polymer layer 38 may be between 3 microns and 25 microns thick. A monophenylcyclobutene layer is on the metal line 32 and one of the openings in the phenylcyclobutene layer exposes a gold or palladium layer of the metal line 32. Further, the manner in which the polymer layer 38 is formed includes spin coating, press bonding, or screen printing.

Next, after the polymer layer 38 is formed, the semiconductor wafer is diced to form a plurality of semiconductor wafers 40.

In addition, as shown in FIG. 7E, the present invention may also not form the polymer layer 34 on the protective layer 14, that is, the metal line 32 is formed on the protective layer 14, and is connected to the pad 16 through the opening 14a (for example, an aluminum pad or a copper pad), wherein the metal line 32 includes at least one wire contact as a bonding wire, for example, the metal wire 32 includes a first wire bonding contact 32a and a second wire bonding contact 32b, viewed from a top perspective view, first The position of the wire bonding contact 32a is above the pad 16 to which the metal wire 32 is connected, and the position of the second wire bonding contact 32b is different from the position of the pad 16 to which the metal wire 32 is connected. Therefore, the present invention can be adapted to the requirements. In the subsequent process, it is selected to join a wire conductor (such as a gold wire) to the first wire contact 32a, a wire wire (such as a gold wire) to the second wire contact 32b, or a wire wire (such as a gold wire). ) to the first wire bonding contact 32a and the second wire bonding contact 32b. For a detailed description of the metal line 32, please refer to the descriptions of Figures 7A and 7B above, which will not be described in detail herein. Next, after the metal line 32 is formed, the semiconductor wafer is diced to form a plurality of semiconductor wafers 42.

Referring to FIG. 7F, the present invention is formed after forming the metal line 32. (As shown in FIG. 7E), a polymer layer 38 may also be formed on the metal line 32, and at least one opening 38a in the polymer layer 38 exposes the metal line 32, and from a top perspective view, The position of the metal line 32 exposed by the opening 38a may be different from the position of the pad 16 to which the metal line 32 is connected, wherein the metal line 32 exposed by the opening 38a serves as a wire bonding joint for bonding the wire bonding wire, for example, two openings. 38a exposes a first wire contact 32a and a second wire contact 32b of a metal line 32 respectively. From a top perspective view, the position of the first wire contact 32a is tied to the connection of the metal line 32. The position of the second wire bonding contact 32b is different from the position of the bonding wire 16 to which the metal wire 32 is connected. Therefore, the present invention can selectively connect a wire bonding wire (for example, a gold wire) to a subsequent process according to requirements. The first wire bonding point 32a, the bonding of a wire bonding wire (for example, a gold wire) to the second wire bonding contact 32b or respectively bonding a wire bonding wire (for example, a gold wire) to the first wire bonding contact 32a and the second wire bonding contact 32b. For a detailed description of the polymer layer 38, please refer to the description of the 7C and 7D above, which will not be described in detail herein. Next, after the polymer layer 38 is formed, the semiconductor wafer is diced to form a plurality of semiconductor wafers 44.

Referring to FIG. 8A, the present invention can form a metal line 32 on a polymer layer 34 and connect the metal protective cover 18 through the polymer layer opening 34a, wherein the polymer layer 34 is tied to the protective layer 14. And an opening 34a in the polymer layer 34 exposes the aluminum-containing metal layer of the metal protective cover 18 (for example, an aluminum layer or an aluminum alloy layer), and the metal line 32 connects the aluminum-containing metal layer through the opening 34a (for example) An aluminum layer or an aluminum alloy layer), the metal protective cover 18 is a pad which is exposed to the main material exposed by the opening 14a, including copper. 16 (ie copper pad). For a detailed description of the polymer layer 34, please refer to the description of Figures 7A and 7B above, which will not be described in detail herein.

The material of the metal line 32 includes gold, copper, nickel or palladium, and the manner of forming the metal line 32 includes a sputtering process, an electroplating process or an electroless plating process. For example, metal line 32 includes an adhesion/barrier layer sputter deposited between 0.01 microns and 0.7 microns (preferably between 0.03 microns and 0.7 microns) formed on polymer layer 34 and opening 34a. The exposed metal protective layer 18 has an aluminum-containing metal layer (eg, an aluminum layer or an aluminum alloy layer) having a thickness between 0.03 micrometers and 1 micrometer (preferably between 0.03 micrometers and 0.7 micrometers) and A gold layer of gold is deposited on the adhesion/barrier layer and a gold layer having a thickness between 1 micrometer and 30 micrometers is formed on the seed layer, wherein the adhesion/barrier layer material comprises titanium, a titanium tungsten alloy, titanium nitride, chromium or tantalum nitride, and the preferred thickness of the gold layer is between 2 microns and 20 microns; or the metal line 32 comprises a thickness between 0.01 microns and 0.7 microns ( An adhesive/barrier layer, preferably between 0.03 micrometers and 0.7 micrometers, is sputtered to form an aluminum-containing metal layer (eg, an aluminum layer) on the polymer layer 34 and the metal protective cover 18 exposed by the opening 34a. Or an aluminum alloy layer) having a thickness between 0.03 microns and 1 micron (preferably between 0.03 microns) a sub-layer sputtering of between 0.7 micron and copper is formed on the adhesion/barrier layer, and a copper layer having a thickness between 1 micrometer and 20 micrometers is electroplated on the seed layer and has a thickness of 1 A nickel layer plating between micrometers to 10 micrometers is formed on the copper layer and a gold layer having a thickness of between 0.01 micrometers and 5 micrometers is electroplated on the nickel layer, wherein the material of the adhesion/barrier layer comprises titanium and titanium. Tungsten alloy, titanium nitride, chromium or tantalum nitride; or, gold The line 32 includes an adhesion/barrier layer sputter deposited between 0.01 microns and 0.7 microns (preferably between 0.03 microns and 0.7 microns) formed on the polymer layer 34 and exposed by the opening 34a. The metal protective cover 18 has an aluminum-containing metal layer (for example, an aluminum layer or an aluminum alloy layer) having a thickness of between 0.03 μm and 1 μm (preferably between 0.03 μm and 0.7 μm) and a material of A sub-layer of copper is formed by depositing a copper layer formed on the adhesion/barrier layer and having a thickness between 1 micrometer and 20 micrometers to form a nickel layer on the seed layer and having a thickness between 1 micrometer and 10 micrometers. Layer plating is formed on the copper layer and a gold layer having a thickness of between 0.05 micrometers and 2 micrometers is electrolessly plated on the nickel layer, wherein the material of the adhesion/barrier layer comprises titanium, titanium tungsten alloy, titanium nitride, chromium Or tantalum nitride; or the metal line 32 includes an adhesion/barrier layer sputtering formed on the polymer layer 34 having a thickness between 0.01 micrometers and 0.7 micrometers (preferably between 0.03 micrometers and 0.7 micrometers). An aluminum-containing metal layer (eg, an aluminum layer or an aluminum layer) of the metal protective cover 18 exposed to the opening 34a On the alloy layer), a sub-layer sputtering of a thickness of between 0.03 micrometers and 1 micrometer (preferably between 0.03 micrometers and 0.7 micrometers) and a material of copper is formed on the adhesion/barrier layer, and the thickness is A nickel layer plating between 1 micrometer and 20 micrometers is formed on the seed layer, and a nickel layer having a thickness of between 1 micrometer and 10 micrometers is plated on the copper layer and has a thickness of between 0.01 micrometers and 5 micrometers. A palladium layer is electroplated on the nickel layer, wherein the material of the adhesion/barrier layer comprises titanium, titanium tungsten alloy, titanium nitride, chromium or tantalum nitride; or the metal line 32 comprises a thickness of 0.01 micron to 0.7 micron. An adhesion/barrier layer between (preferably between 0.03 and 0.7) is formed on the polymer layer 34 and exposed by the opening 34a. The aluminum-containing metal layer (for example, an aluminum layer or an aluminum alloy layer) of the cover 18 has a thickness of between 0.03 micrometers and 1 micrometer (preferably between 0.03 micrometers and 0.7 micrometers) and is made of copper. A nickel layer plating is formed by depositing a copper layer formed on the adhesion/barrier layer and having a thickness between 1 micrometer and 20 micrometers on the seed layer and having a thickness between 1 micrometer and 10 micrometers. A palladium layer formed on the copper layer and having a thickness of between 0.05 μm and 2 μm is electrolessly plated on the nickel layer, wherein the material of the adhesion/barrier layer comprises titanium, titanium tungsten alloy, titanium nitride, chromium or nitrogen. Phlegm. In addition, the metal line 32 includes at least one wire contact as a bonding wire. For example, the metal wire 32 includes a first wire bonding contact 32a and a second wire bonding contact 32b. The first wire bonding contact is viewed from a top perspective view. The position of 32a is above the metal protection cover 18 to which the metal line 32 is connected, and the position of the second connection line 32b is different from the position of the metal protection cover 18 to which the metal line 32 is connected. Therefore, the present invention can be used according to requirements. In the subsequent process, it is selected to join a wire conductor (such as a gold wire) to the first wire contact 32a, a wire wire (such as a gold wire) to a second wire contact 32b, or a wire wire (such as a gold wire). The first wire bonding contact 32a and the second wire bonding contact 32b.

Next, after the metal lines 32 are formed, the semiconductor wafers are diced to form a plurality of semiconductor wafers 46.

Referring to FIG. 8B, after forming the metal line 32 (as shown in FIG. 8A), a polymer layer 38 may be formed on the metal line 32 and the polymer layer 34, and in the polymer. At least one opening 38a in layer 38 exposes metal line 32, and from a top perspective view, the location of metal line 32 exposed by opening 38a may be different than metal line 32. The position of the connected metal protection cover 18, wherein the metal line 32 exposed by the opening 38a serves as a wire bonding contact for bonding the wire bonding wire, for example, the two openings 38a respectively expose a first wire bonding point 32a and a metal wire 32. The second wire contact 32b is viewed from a top perspective view. The position of the first wire contact 32a is located above the metal protection cover 18 to which the metal line 32 is connected, and the position of the second wire contact 32b is different from the metal. The position of the metal protection cover 18 connected to the line 32, so the present invention can selectively engage a wire conductor (such as a gold wire) to the first wire bonding point 32a and the bonding wire (such as a gold wire) in a subsequent process. To the second wire contact 32b or a wire bonding wire (for example, a gold wire) to the first wire bonding contact 32a and the second wire bonding contact 32b, respectively. For a detailed description of the polymer layer 38, please refer to the description of the 7C and 7D above, which will not be described in detail herein. Next, after the polymer layer 38 is formed, the semiconductor wafer is diced to form a plurality of semiconductor wafers 48.

Referring to FIG. 8C, the present invention may also not form the polymer layer 34 on the protective layer 14, that is, the metal line 32 is formed on the protective layer 14 and the aluminum-containing metal layer of the metal protective cover 18 (for example, an aluminum layer or An aluminum alloy layer, wherein the metal line 32 includes at least one wire contact as a bonding wire, for example, the metal wire 32 includes a first wire bonding contact 32a and a second wire bonding contact 32b, which are viewed from a top perspective view. The position of the first wire contact 32a is located above the metal protection cover 18 to which the metal line 32 is connected, and the position of the second wire contact 32b is different from the position of the metal protection cover 18 to which the metal line 32 is connected. According to the invention, in the subsequent process, a wire bonding wire (for example, a gold wire) is selectively joined to the first wire bonding contact 32a, and the bonding is performed. A wire bonding wire (for example, a gold wire) is connected to the second wire bonding node 32b or a wire bonding wire (for example, a gold wire) to the first wire bonding contact 32a and the second wire bonding contact 32b, respectively. For a detailed description of the metal line 32, please refer to the descriptions of FIGS. 7A and 7B above, and the detailed description thereof will not be repeated here. Next, after the metal lines 32 are formed, the semiconductor wafers are diced to form a plurality of semiconductor wafers 50.

Referring to FIG. 8D, after forming the metal line 32 (as shown in FIG. 8C), a polymer layer 38 may be formed on the metal line 32 and at least one of the polymer layers 38. The opening 38a exposes the metal line 32, and the position of the metal line 32 exposed by the opening 38a may be different from the position of the metal protective cover 18 to which the metal line 32 is attached, as viewed from a top perspective view, wherein the opening 38a is exposed The metal line 32 is used as a wire bonding joint for bonding the wire bonding wires. For example, the two openings 38a respectively expose a first wire bonding node 32a and a second wire bonding node 32b of the metal wire 32, which are viewed from a top perspective view. The position of the wire bonding contact 32a is located above the metal protection cover 18 to which the metal wire 32 is connected, and the position of the second wire bonding contact 32b is different from the position of the metal protection cover 18 to which the metal wire 32 is connected, so the present invention can According to the requirements in the subsequent process, it is selected to join a wire conductor (such as gold wire) to the first wire contact 32a, join a wire wire (such as gold wire) to the second wire contact 32b or respectively engage a wire wire (for example Gold line) to the first One line contact 32a and second line contact 32b. For a detailed description of the polymer layer 38, please refer to the description of the 7C and 7D above, which will not be described in detail herein. Next, after the polymer layer 38 is formed, the semiconductor wafer is diced to form a plurality of semiconductor wafers 52.

First embodiment

Referring to FIG. 9A, the plurality of adhesive materials 54 are formed on a substrate 56 through a dispensing process. Then, the plurality of semiconductor wafers 23 are respectively pressed onto the adhesive materials 54 and passed through. After the baking process, the semiconductor wafer 23 is adhered to the substrate 56, that is, the semiconductor wafer 23 is adhered to the substrate 56 by the semiconductor substrate 2 through the adhesive material 54. Wherein, the material of the adhesive material 54 is, for example, a polymer material (for example, polyimide, epoxy or silver glue), and the thickness is between 1 micrometer and 50 micrometers, for example, the adhesive material 54 may have a thickness of 1 Polyimine between microns and 50 microns, or epoxy between 1 and 50 microns thick, or silver-filed epoxy between 1 and 50 microns .

In addition, the substrate 56 may be a ball grid array (BGA) substrate having a thickness between 200 micrometers and 2,000 micrometers; or the substrate 56 may be a glass fiber containing between 200 micrometers and 2,000 micrometers thick. a substrate of epoxy resin; or, the substrate 56 may be a glass substrate having a thickness between 200 micrometers and 2,000 micrometers; or, the substrate 56 may be a germanium substrate having a thickness between 200 micrometers and 2,000 micrometers; or The substrate 56 may be a ceramic substrate having a thickness between 200 micrometers and 2,000 micrometers; or the substrate 56 may be an organic substrate having a thickness between 200 micrometers and 2,000 micrometers; or the substrate 56 may have a thickness of 200 a metal substrate between micrometers and 2,000 micrometers and comprising aluminum; or the substrate 56 may have a thickness between 200 micrometers and 2,000 micrometers The material includes a metal substrate of copper.

Referring to FIG. 9B, one end of the one-wire wire 58 is ball-bonded to one of the wire pads 22 of a semiconductor wafer 23 through a one-wire process (eg, a gold or palladium layer bonded to the wire bond pad 22). The other end of the wire bonding wire 58 is wedge-bonded to a contact 57 of one of the metal wires of the substrate 56, wherein the wire bonding wire 58 is, for example, between 20 micrometers and 50 micrometers in diameter and contains a material. A metal wire of gold (or gold wire). Therefore, the bonding pads 22 of the semiconductor wafer 23 are electrically connected to the metal lines of the substrate 56.

Referring to FIG. 9C, a polymer material 60 having a thickness t5 between 250 micrometers and 1,000 micrometers is formed on the substrate 56 and covers the semiconductor wafer 23 and the wire bonding wires 58. The manner in which the polymer material 60 is formed includes The molding process or the dispensing process, and the like, and the material of the polymer material 60 includes polyimine (PI), phenylcyclobutene (BCB) or epoxy resin.

For example, a polyimine having a thickness t5 between 250 micrometers and 1,000 micrometers is formed on the substrate 56 by the filling process and covering the semiconductor wafer 23 and the wire bonding wires 58; or, by using a film filling process, the thickness t5 is formed to be 250 micrometers. Phenylcyclobutene to between 1,000 micrometers on the substrate 56 and covering the semiconductor wafer 23 and the wire bonding wire 58; or, by using a film filling process, a polymerization having an epoxy resin concentration of between 250 micrometers and 1,000 micrometers is formed. The material is on the substrate 56 and covers the semiconductor wafer 23 and the wire bonding wires 58.

For example, using a dispensing process to form a thickness t5 between 250 microns and 1,000 Polyimine between the micrometers on the substrate 56 and covering the semiconductor wafer 23 and the wire bonding wire 58; or, using a dispensing process to form a phenylcyclobutene having a thickness t5 between 250 micrometers and 1,000 micrometers on the substrate 56 And covering the semiconductor wafer 23 and the wire bonding wire 58; or forming a polymer material having a thickness t5 between 250 micrometers and 1,000 micrometers and containing epoxy resin on the substrate 56 and covering the semiconductor wafer 23 and the wire bonding wire 58 by using a dispensing process .

Referring to FIG. 9D, a lead-free solder is formed on a contact 64 of the substrate 56 by a ball planting process or a screen printing process, and then A reflow process for lead-free solder in an environment with a temperature between 200 ° C and 300 ° C (preferably between 230 ° C and 260 ° C) to form a diameter d of between 0.25 cm and A lead-free solder ball 62 between 1.2 cm is on the contact 64 of the substrate 56, wherein the reflow process is between 5 seconds and 90 seconds, preferably 20 seconds. Between 40 seconds. In addition, the material of the lead-free solder ball 62 may be a tin-lead alloy, a tin-silver alloy, a tin-silver-copper alloy or a lead-free alloy. ). Further, since the lead-free solder ball 62 is bonded to the contact 64 of the metal line of one of the substrates 56, the contact-free solder ball 62 is electrically connected to the wire bonding wire 58.

Referring to FIG. 9E, after forming the lead-free solder balls 62, the substrate 56 and the polymer material 60 are cut (eg, mechanically cut) to form a plurality of wafer package structures 66. In FIG. 9E, the substrate 56 includes a first surface and a second surface, and the first surface and the second surface are opposite surfaces. The adhesive material 54 and the polymer material 60 are tied on the first surface (the semiconductor wafer 23 is adhered to the first surface through the adhesive material 54), and the lead-free solder balls 62 are located on the second surface.

Referring to FIGS. 10A to 10L, respectively, the present invention can also use semiconductor wafers 31, 36, 40, 42, 44, 46, 48, 50 through the steps described in FIGS. 9A to 9D. Substituting the semiconductor wafer 23 in the series of FIG. 9 and, after forming the lead-free solder balls 62, cutting (eg, mechanically cutting) the substrate 56 and the polymer material 60 to form the chip package structures 68, 70, 72, 74, respectively. 76, 78, 80, 82, and 84. For details, please refer to the descriptions of FIGS. 9A to 9E, which will not be described in detail herein.

In addition, in the 10Cth to 10thth drawings, the position where the wire bonding wire 58 engages the metal wire 32 is viewed from a top perspective view, and the position may be different from the position of the pad 16 to which the metal wire 32 is connected, or different from The location of the metal protective cover 18 to which the metal line 32 is attached. Therefore, in the 10th to 10th drawings, the metal line 32 may include a first wire bonding contact 32a and a second wire bonding contact 32b. The position of the first wire bonding pad 32a is viewed from a top perspective view. Positioned above the pads 16 to which the metal lines 32 are connected, and the position of the second wire contacts 32b is different from the position of the pads 16 to which the metal lines 32 are connected, so the present invention can optionally engage a wire conductor 58 (eg, gold). Line) to the first wire bonding point 32a, joining a wire bonding wire 58 (for example, gold wire) to the second wire bonding contact 32b or respectively bonding a wire bonding wire 58 (for example, a gold wire) to the first wire bonding contact 32a and the second Wire the contact 32b.

Second embodiment

Referring to FIG. 11A, the plurality of adhesive materials 54 are formed on a plurality of wafer carriers 86a of a lead frame 86 through a dispensing process; then, the plurality of semiconductor wafers 23 are respectively pressed. The adhesive material 54 is incorporated and the semiconductor wafer 23 is adhered to the wafer carrier 86a after the baking process. Therefore, the semiconductor wafer 23 is adhered to the wafer carrier 86a via the adhesive material 54 with the semiconductor substrate 2. Wherein, the material of the adhesive material 54 is, for example, a polymer material (for example, polyimide, epoxy or silver glue), and the thickness is between 1 micrometer and 50 micrometers, for example, the adhesive material 54 may have a thickness of 1 Polyimine between micrometers and 50 micrometers, or epoxy resin having a thickness between 1 micrometer and 50 micrometers, or silver-filed epoxy having a thickness between 1 micrometer and 50 micrometers. . In addition, the material of the lead frame 86 includes copper or a copper alloy, and the thickness t6 of the lead frame 86 is between 100 micrometers and 2,000 micrometers.

Referring to FIG. 11B, one end of the wire bonding wire 58 is ball bonded to one of the wire bonding pads 22 of the semiconductor wafer 23 through a one-wire process (for example, a gold layer or a palladium layer bonded to the bonding pad 22). The other end of the wire bonding wire 58 is wedge-bonded to one of the lead 86b of the lead frame 86, wherein the wire bonding wire 58 is, for example, between 20 micrometers and 50 micrometers in diameter and contains a material. A metal wire of gold (or gold wire). Therefore, the wire bonding pads 22 of the semiconductor wafer 23 are electrically connected to the leads 86b of the lead frame 86.

Referring to FIG. 11C, a polymer material having a thickness t7 between 250 micrometers and 1,000 micrometers is formed by a molding process. The material 88 covers the lead frame 86 (which covers the wafer carrier 86a and the partial leads 86b), the semiconductor wafer 23, and the wire bonding wires 58, and exposes a portion of the leads 86b of the lead frame 86. The material of the polymer material 88 includes polyimine (PI), phenylcyclobutene (BCB) or epoxy resin.

For example, a polyimide coated lead frame 86 (which covers the wafer carrier 86a and a portion of the leads 86b) having a thickness t7 between 250 micrometers and 1,000 micrometers, a semiconductor wafer 23, and a wire bonding is formed by a film filling process. a wire 58 and exposing a portion of the lead 86b of the lead frame 86; or, by using a film filling process, a phenylcyclobutene coated lead frame 86 having a thickness t7 between 250 micrometers and 1,000 micrometers (which is a coated wafer) a carrier 86a and a portion of the lead 86b), the semiconductor wafer 23 and the wire bonding wire 58 and exposing a portion of the lead 86b of the lead frame 86; or, by using a film filling process, forming a thickness t7 between 250 micrometers and 1,000 micrometers and The epoxy-containing polymer material covers the lead frame 86 (which covers the wafer carrier 86a and the partial leads 86b), the semiconductor wafer 23, and the wire bonding wires 58, and exposes a portion of the leads 86b of the lead frame 86.

Referring to FIG. 11D, after forming the polymer material 88, the chip package structure 90 (or the lead frame package) is formed by shear trimming and pressing the pins 86b into various pre-designed shapes. , lead-frame package). The lead frame package structure 90 can be a Small Outline Package (SOP), a Thin Small Outline Package (TSOP), a Dual In-Line Package (DIP), or a ceramic. Ceramic Dual In-Line Package (CDIP), glass ceramic dual in-line package (Glass Ceramic Dual In-Line Packag, CERDIP), surface mount package (CERQUAD), ceramic leaded chip carrier (CLCC), quad flat package (QFP), plastic pin Plastic Leaded Chip Carrier (PLCC), Small Outline J-lead (SOJ), Small Outline Integrated Circuit (SOIC) or Cross-Lead Package (Zig) -zag In-line Package, ZIP) and other package types.

Referring to FIGS. 12A to 12L, respectively, the present invention may also use semiconductor wafers 31, 36, 40, 42, 44, 46, 48, 50 through the steps described in FIGS. 11A to 11D. Substituting the semiconductor wafer 23 in the series of FIG. 11 and forming the chip package structures 92, 94, 96, 98 after the steps of shearing and pressing the pins 86b into various pre-designed shapes. 100, 102, 104, 106, and 108. For details, please refer to the descriptions of FIGS. 11A to 11D, which will not be described in detail herein.

In addition, in the 12th to 12th drawings, the position where the wire bonding wire 58 engages the metal wire 32 is viewed from a top perspective view, and the position may be different from the position of the pad 16 to which the metal wire 32 is connected, or different from The location of the metal protective cover 18 to which the metal line 32 is attached. Therefore, in the 12th to 12thth drawings, the metal line 32 may include a first wire bonding contact 32a and a second wire bonding contact 32b. The position of the first wire bonding pad 32a is viewed from a top perspective view. The position is above the pad 16 to which the metal line 32 is connected, and the position of the second wire contact 32b is different from the metal line 32. The position of the connected pads 16, so the present invention can optionally engage a wire conductor 58 (e.g., gold wire) to the first wire bond 32a, engage a wire conductor 58 (e.g., gold wire) to the second wire bond 32b or A wire bonding wire 58 (for example, a gold wire) is bonded to the first wire bonding contact 32a and the second wire bonding contact 32b, respectively.

The above description of the embodiments of the present invention is intended to be understood by those skilled in the art, and the invention may be practiced without departing from the scope of the invention. Equivalent modifications or modifications made by the spirit of the invention should still be included in the scope of the claims described below.

2‧‧‧Semiconductor substrate

4‧‧‧Semiconductor components

6‧‧‧Line structure

8‧‧‧ patterned metal layer

10‧‧‧Metal plug

12‧‧‧Dielectric layer

14‧‧‧Protective layer

14a‧‧‧ Opening

16‧‧‧ pads

18‧‧‧Metal protective cover

20‧‧‧ structure

22‧‧‧Wire pad

23‧‧‧Semiconductor wafer

24‧‧‧Adhesive/barrier layer

26‧‧‧ seed layer

28‧‧‧Photoresist layer

28a‧‧‧Photoresistive opening

30‧‧‧metal layer

31‧‧‧Semiconductor wafer

32‧‧‧Metal lines

32a‧‧‧Wire contact

32b‧‧‧Wire contact

34‧‧‧ polymer layer

34a‧‧‧ openings

36‧‧‧Semiconductor wafer

38‧‧‧ polymer layer

38a‧‧‧ Opening

40‧‧‧Semiconductor wafer

42‧‧‧Semiconductor wafer

44‧‧‧Semiconductor wafer

46‧‧‧Semiconductor wafer

48‧‧‧Semiconductor wafer

50‧‧‧Semiconductor wafer

52‧‧‧Semiconductor wafer

54‧‧‧Adhesive materials

56‧‧‧Substrate

57‧‧‧Contacts

58‧‧‧Wire wire

60‧‧‧Polymer materials

62‧‧‧Unleaded solder balls

64‧‧‧Contacts

66‧‧‧ Chip package structure

68‧‧‧ Chip package structure

70‧‧‧ Chip package structure

72‧‧‧ Chip package structure

74‧‧‧ Chip package structure

76‧‧‧ Chip package structure

78‧‧‧ Chip package structure

80‧‧‧ Chip package structure

82‧‧‧ Chip package structure

84‧‧‧ Chip package structure

86‧‧‧ lead frame

86a‧‧‧ wafer carrier

86b‧‧‧ pin

88‧‧‧Polymer materials

90‧‧‧ Chip package structure

92‧‧‧ Chip package structure

94‧‧‧ Chip package structure

96‧‧‧ Chip package structure

98‧‧‧ Chip package structure

100‧‧‧ Chip package structure

102‧‧‧ Chip package structure

104‧‧‧ Chip package structure

106‧‧‧ Chip package structure

108‧‧‧ Chip package structure

110‧‧‧ Gold wire

112‧‧‧Semiconductor wafer

114‧‧‧Aluminum metal protective cover

116‧‧‧Spherical grid array substrate

118‧‧‧Protective layer

118a‧‧‧ Opening

120‧‧‧ copper pad

122‧‧‧ solder balls

Schematic description:

FIG. 1 is a schematic cross-sectional view of a conventional ball grid array package structure.

2A to 2B are respectively schematic cross-sectional views showing a structure of the present invention.

Fig. 3 is a schematic cross-sectional view showing a semiconductor wafer having a wire bonding pad of the present invention.

4A to 4G are schematic cross-sectional views showing a process for forming a wire bonding pad according to the present invention.

5A and 5B are schematic cross-sectional views showing a semiconductor wafer having a wire bonding pad according to the present invention.

6A to 6G are schematic cross-sectional views showing a process of forming a wire bonding pad according to the present invention.

7A and 7F are respectively a semiconductor wafer having a metal according to the present invention A schematic cross-section of the line above the protective layer.

8A and 8D are respectively schematic cross-sectional views showing a semiconductor wafer having a metal line over a protective layer.

9A to 9E are schematic cross-sectional views showing a process of an embodiment of the present invention.

10A and 10L are respectively schematic cross-sectional views of a wafer package structure of the present invention.

11A to 11D are schematic cross-sectional views showing a process of an embodiment of the present invention.

12A and 12L are respectively schematic cross-sectional views of a lead frame package structure of the present invention.

2‧‧‧Semiconductor substrate

14‧‧‧Protective layer

14a‧‧‧ Opening

16‧‧‧ pads

20‧‧‧ structure

22‧‧‧Wire pad

23‧‧‧Semiconductor wafer

54‧‧‧Adhesive materials

56‧‧‧Substrate

57‧‧‧Contacts

58‧‧‧Wire wire

60‧‧‧Polymer materials

62‧‧‧Unleaded solder balls

64‧‧‧Contacts

66‧‧‧ Chip package structure

Claims (20)

A chip package structure comprising: a ball grid array (BGA) substrate; a semiconductor wafer disposed above the ball grid array substrate, wherein the semiconductor wafer comprises a semiconductor substrate, a metal oxide semiconductor (MOS) device, a dielectric layer, a wiring structure, a second dielectric layer, a protective layer, and a wire bond pad, the metal oxide semiconductor (MOS) device being located in or over the semiconductor substrate, the first dielectric layer being over the semiconductor substrate, The circuit structure is located above the first dielectric layer, wherein the circuit structure comprises a first metal layer and a second metal layer, the second metal layer is located above the first metal layer, and the second dielectric layer is located at the first metal layer Between the layer and the second metal layer, the protective layer is located above the MOS device, the protective layer is located above the first dielectric layer and the second dielectric layer, and the protective layer is located above the circuit structure, wherein the The protective layer includes a nitride layer, wherein an opening in the protective layer is located above a junction of the wiring structure, and the contact is located at a bottom of the opening, and the bonding pad is located at the semiconductor a bottom layer, wherein the wire bond pad is connected to the contact via the opening, wherein the wire bond pad comprises a copper layer; a glue material is located between the ball grid array substrate and the semiconductor wafer, wherein the wire bond pad The adhesive material contacts the spherical grid array substrate and the semiconductor substrate; the wire bonding wire joins the wire bonding pad and the spherical grid array substrate; the polymer material is located above the spherical grid array substrate and the protective layer, Wherein the polymer material covers the wire bonding wire; and a lead-free solder ball is located on the ball grid array substrate Above, wherein the lead-free solder ball comprises tin. The wafer package structure of claim 1, wherein the wiring structure comprises electroplated copper. The wafer package structure of claim 1, wherein the wiring structure comprises aluminum. The wafer package structure of claim 1, wherein the wire bonding pad further comprises a titanium-containing metal layer, the titanium-containing metal layer being located under the copper layer. The wafer package structure of claim 1, wherein the wire bond pad further comprises a nickel layer, the nickel layer being over the copper layer. The chip package structure of claim 1, wherein the wire bond pad further comprises a nickel layer and a gold layer, the nickel layer being on the copper layer, the gold layer being on the nickel layer. The wafer package structure of claim 1, wherein the wire bond pad further comprises a nickel layer and a palladium layer, the nickel layer being above the copper layer, the palladium layer being above the nickel layer. The wafer package structure of claim 1, wherein the copper layer has a thickness of between 1 micrometer and 13 micrometers. The wafer package structure of claim 1, wherein the polymer material has a first left side wall and a first right side wall, the first right side wall being opposite and parallel to the first left side wall, and the spherical type The grid array substrate has a second left side wall and a second right side wall, the second right side wall being opposite and parallel to the second left side wall, wherein the first left side wall and the second left side wall are substantially coplanar, and The first right side wall is substantially coplanar with the second right side wall. The chip package structure of claim 1, wherein the The lead solder ball further includes silver, and the lead-free solder ball has a diameter of between 0.25 cm and 1.2 cm. The chip package structure of claim 1, wherein the ball grid array substrate has a top side and a bottom side, wherein the semiconductor wafer, the adhesive material and the polymer material are on the top side, and the lead-free The solder ball is located on the bottom side. A chip package structure comprising: a ball grid array (BGA) substrate; a semiconductor wafer disposed above the ball grid array substrate, wherein the semiconductor wafer comprises a germanium substrate, a metal oxide semiconductor (MOS) device, a dielectric layer, a wiring structure, a second dielectric layer, a protective layer, and a wire bonding pad, the metal oxide semiconductor (MOS) device being located in or above the germanium substrate, the first dielectric layer being located above the germanium substrate, The circuit structure is located above the first dielectric layer, wherein the circuit structure comprises a first metal layer and a second metal layer, the second metal layer is located above the first metal layer, and the second dielectric layer is located at the first metal layer Between the layer and the second metal layer, the protective layer is located above the MOS device, the protective layer is located above the first dielectric layer and the second dielectric layer, and the protective layer is located above the circuit structure, wherein the The protective layer includes a nitride layer, wherein an opening in the protective layer is above a junction of the wiring structure, and the contact is located at a bottom of the opening, and the bonding pad is located above the germanium substrate, wherein the The wire bonding pad is connected to the contact via the opening, wherein the wire bonding pad comprises a titanium-containing metal layer and a gold layer, and the titanium-containing metal layer has a thickness of between 0.03 micrometers and 0.7 micrometers, and the thickness of the gold layer Between 1 micrometer and 20 micrometers, the gold layer is above the titanium-containing metal layer; a glue material is located on the spherical grid array substrate and the half Between the conductor wafers, wherein the adhesive material contacts the spherical grid array substrate and the germanium substrate; a gold wire bonding the gold layer and the spherical grid array substrate; and a polymer material located on the spherical grid array substrate And the protective layer, wherein the polymer material covers the gold wire; and the lead-free solder ball is located on the ball grid array substrate, wherein the lead-free solder ball comprises tin. The wafer package structure of claim 12, wherein the wiring structure comprises electroplated copper. The wafer package structure of claim 12, wherein the wiring structure comprises aluminum. The wafer package structure of claim 12, wherein the thickness of the gold layer is between 3 microns and 5 microns. The wafer package structure of claim 12, wherein the lead-free solder ball further comprises silver, and the lead-free solder ball has a diameter of between 0.25 cm and 1.2 cm. The chip package structure of claim 12, wherein the spherical grid array substrate has a top side and a bottom side, wherein the semiconductor wafer, the adhesive material and the polymer material are on the top side, and the lead-free The solder ball is located on the bottom side. The wafer package structure of claim 12, wherein the adhesive material comprises an epoxy resin-based material. The wafer package structure of claim 12, wherein the polymer material comprises an epoxy resin based material. The chip package structure of claim 12, wherein The contact area between the gold wire and the wire bond pad is located upright above the joint.