TWI393771B - 加強氧化物移除速率之鎵與鉻離子 - Google Patents

加強氧化物移除速率之鎵與鉻離子 Download PDF

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Publication number
TWI393771B
TWI393771B TW096121659A TW96121659A TWI393771B TW I393771 B TWI393771 B TW I393771B TW 096121659 A TW096121659 A TW 096121659A TW 96121659 A TW96121659 A TW 96121659A TW I393771 B TWI393771 B TW I393771B
Authority
TW
Taiwan
Prior art keywords
cerium oxide
abrasive composition
substrate
iii
chromium
Prior art date
Application number
TW096121659A
Other languages
English (en)
Chinese (zh)
Other versions
TW200808947A (en
Inventor
葛倫拜 史帝芬
Original Assignee
卡博特微電子公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 卡博特微電子公司 filed Critical 卡博特微電子公司
Publication of TW200808947A publication Critical patent/TW200808947A/zh
Application granted granted Critical
Publication of TWI393771B publication Critical patent/TWI393771B/zh

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Classifications

    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09G—POLISHING COMPOSITIONS; SKI WAXES
    • C09G1/00—Polishing compositions
    • C09G1/02—Polishing compositions containing abrasives or grinding agents
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
    • H10P95/06—Planarisation of inorganic insulating materials
    • H10P95/062—Planarisation of inorganic insulating materials involving a dielectric removal step
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • C09K3/1454—Abrasive powders, suspensions and pastes for polishing
    • C09K3/1463—Aqueous liquid suspensions

Landscapes

  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
TW096121659A 2006-07-21 2007-06-15 加強氧化物移除速率之鎵與鉻離子 TWI393771B (zh)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US11/491,055 US7501346B2 (en) 2006-07-21 2006-07-21 Gallium and chromium ions for oxide rate enhancement

Publications (2)

Publication Number Publication Date
TW200808947A TW200808947A (en) 2008-02-16
TWI393771B true TWI393771B (zh) 2013-04-21

Family

ID=38971976

Family Applications (1)

Application Number Title Priority Date Filing Date
TW096121659A TWI393771B (zh) 2006-07-21 2007-06-15 加強氧化物移除速率之鎵與鉻離子

Country Status (9)

Country Link
US (1) US7501346B2 (https=)
EP (1) EP2069451B1 (https=)
JP (1) JP5357021B2 (https=)
KR (1) KR101265384B1 (https=)
CN (1) CN101490204B (https=)
IL (1) IL196221A (https=)
MY (1) MY145618A (https=)
TW (1) TWI393771B (https=)
WO (1) WO2008013668A1 (https=)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5364959B2 (ja) * 2009-03-27 2013-12-11 国立大学法人大阪大学 研磨方法及び研磨装置
CN104371551B (zh) * 2013-08-14 2018-01-12 安集微电子（上海）有限公司 一种碱性阻挡层化学机械抛光液
CN115851134B (zh) * 2022-10-27 2024-09-10 万华化学集团电子材料有限公司 一种高精度硅片抛光组合物及其应用

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5114437A (en) * 1990-08-28 1992-05-19 Sumitomo Chemical Co., Ltd. Polishing composition for metallic material
US6362108B1 (en) * 1999-04-22 2002-03-26 Clariant (France) S.A. Composition for mechanical chemical polishing of layers in an insulating material based on a polymer with a low dielectric constant
US20040023492A1 (en) * 2000-09-20 2004-02-05 Jinru Bian Method for planarizing metal interconnects

Family Cites Families (23)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5230833A (en) 1989-06-09 1993-07-27 Nalco Chemical Company Low sodium, low metals silica polishing slurries
US4959113C1 (en) * 1989-07-31 2001-03-13 Rodel Inc Method and composition for polishing metal surfaces
JPH0781132B2 (ja) * 1990-08-29 1995-08-30 株式会社フジミインコーポレーテッド 研磨剤組成物
US5196353A (en) 1992-01-03 1993-03-23 Micron Technology, Inc. Method for controlling a semiconductor (CMP) process by measuring a surface temperature and developing a thermal image of the wafer
US6614529B1 (en) 1992-12-28 2003-09-02 Applied Materials, Inc. In-situ real-time monitoring technique and apparatus for endpoint detection of thin films during chemical/mechanical polishing planarization
US5658183A (en) 1993-08-25 1997-08-19 Micron Technology, Inc. System for real-time control of semiconductor wafer polishing including optical monitoring
US5433651A (en) 1993-12-22 1995-07-18 International Business Machines Corporation In-situ endpoint detection and process monitoring method and apparatus for chemical-mechanical polishing
JP3270282B2 (ja) 1994-02-21 2002-04-02 株式会社東芝 半導体製造装置及び半導体装置の製造方法
JP3313505B2 (ja) 1994-04-14 2002-08-12 株式会社日立製作所 研磨加工法
US5964643A (en) 1995-03-28 1999-10-12 Applied Materials, Inc. Apparatus and method for in-situ monitoring of chemical mechanical polishing operations
US5893796A (en) 1995-03-28 1999-04-13 Applied Materials, Inc. Forming a transparent window in a polishing pad for a chemical mechanical polishing apparatus
US5838447A (en) 1995-07-20 1998-11-17 Ebara Corporation Polishing apparatus including thickness or flatness detector
US5872633A (en) 1996-07-26 1999-02-16 Speedfam Corporation Methods and apparatus for detecting removal of thin film layers during planarization
TW455626B (en) * 1998-07-23 2001-09-21 Eternal Chemical Co Ltd Chemical mechanical abrasive composition for use in semiconductor processing
US6293848B1 (en) * 1999-11-15 2001-09-25 Cabot Microelectronics Corporation Composition and method for planarizing surfaces
US20020039839A1 (en) * 1999-12-14 2002-04-04 Thomas Terence M. Polishing compositions for noble metals
JP2001187876A (ja) 1999-12-28 2001-07-10 Nec Corp 化学的機械的研磨用スラリー
WO2001060940A1 (en) * 2000-02-16 2001-08-23 Rodel Inc Biocides for polishing slurries
JP2001269859A (ja) * 2000-03-27 2001-10-02 Jsr Corp 化学機械研磨用水系分散体
JP4954398B2 (ja) * 2001-08-09 2012-06-13 株式会社フジミインコーポレーテッド 研磨用組成物およびそれを用いた研磨方法
JP2003142435A (ja) 2001-10-31 2003-05-16 Fujimi Inc 研磨用組成物およびそれを用いた研磨方法
JP4083528B2 (ja) 2002-10-01 2008-04-30 株式会社フジミインコーポレーテッド 研磨用組成物
JP2004327952A (ja) * 2003-03-03 2004-11-18 Fujimi Inc 研磨用組成物

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5114437A (en) * 1990-08-28 1992-05-19 Sumitomo Chemical Co., Ltd. Polishing composition for metallic material
US6362108B1 (en) * 1999-04-22 2002-03-26 Clariant (France) S.A. Composition for mechanical chemical polishing of layers in an insulating material based on a polymer with a low dielectric constant
US20040023492A1 (en) * 2000-09-20 2004-02-05 Jinru Bian Method for planarizing metal interconnects

Also Published As

Publication number Publication date
JP2009545134A (ja) 2009-12-17
JP5357021B2 (ja) 2013-12-04
EP2069451B1 (en) 2015-06-24
EP2069451A4 (en) 2011-04-27
CN101490204A (zh) 2009-07-22
IL196221A (en) 2011-12-29
KR101265384B1 (ko) 2013-05-20
EP2069451A1 (en) 2009-06-17
US20080020577A1 (en) 2008-01-24
TW200808947A (en) 2008-02-16
MY145618A (en) 2012-03-15
WO2008013668A1 (en) 2008-01-31
KR20090030316A (ko) 2009-03-24
US7501346B2 (en) 2009-03-10
IL196221A0 (en) 2009-09-22
CN101490204B (zh) 2012-12-26

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