TWI392403B - Plasma jet electrode device and system thereof - Google Patents

Description

Plasma jet electrode device and system thereof

The invention relates to a plasma jet electrode device, in particular to an unbalanced plasma jet which can be produced under low temperature and normal pressure, thereby improving plasma processing area and uniformity, so as to achieve a more ideal surface treatment effect of the workpiece. Plasma jet electrode device.

According to the principle of gas free (plasma) in recent years, the removal of pollutants by gaseous oxidation has been studied and developed, such as Electron Beam, Corona Discharge, Microwave, High frequency (Radio Frequency, RF), Dielectric Barrier Discharge (DBD), etc., have been confirmed to have a certain processing effect, wherein the dielectric discharge method can be carried out under normal pressure Effective discharge, and low cost, is one of the current research mainstream of non-thermal plasma removal of pollutants, and the dielectric plasma discharge method has been widely used in plastic film printing processing, ore electrostatic screening separator, ozone generation Treatment, surface modification, surface cleaning, radiation waste, and exhaust gas treatment, etc., however, the non-thermal plasma is still in a high temperature state, and there are still some disadvantages of uneven treatment and uneven treatment effect on the surface treatment of the workpiece. It still needs further improvement.

The invention provides a "plasma jet electrode device", which has a positioning seat, a ceramic tube is arranged in the positioning seat, a disc is arranged in the ceramic tube, and a plurality of oblique holes penetrating through the disc are arranged on the disc. A high-voltage metal electrode is arranged, a dielectric discharge plasma region is formed between the high-voltage metal electrode and the ceramic tube, a rotating seat is arranged on the circumferential surface of the positioning seat, a bottom plate is arranged at the bottom end of the rotating base, and a ground electrode is disposed on the inner wall of the chassis, and the ground electrode is disposed A low temperature unbalanced plasma region is formed between the high voltage metal electrode, a nozzle head is disposed at the bottom end of the chassis, and a plurality of inclined holes are disposed on the nozzle head.

By this design, the wires can be connected to the power supply, so that the electric circuit can transmit the alternating high-frequency and high-voltage power generated by the plasma, and the chassis is grounded, and the atmospheric and plasma process gases at low temperature and normal pressure are entered by the air pipe. And the plasma generated by flowing the dielectric discharge plasma region through the oblique hole disposed on the disk atomizes the plasma in a turbulent manner, and generates low temperature non-equilibrium in the subsequent low temperature unbalanced plasma region. The plasma is modified by the nozzle head rotation mechanism and the oblique hole jet design to rotate the low-temperature and normal-pressure unbalanced plasma to change the plasma treatment area and uniformity.

The above and other objects, features and advantages of the present invention will become more <RTIgt;

Referring to the first and second figures, the "plasma electrode assembly" of the present invention has a positioning base 10, a ceramic tube 20 is disposed in the positioning base 10, and a disc is disposed in the ceramic tube 20. 30, a plurality of obliquely extending oblique holes 31 are arranged on the disk 30, and the three-dimensional schematic view is as shown in the second figure. A high-voltage metal electrode 40 is disposed in the disk 30, and the high-voltage metal electrode 40 is a hollow cylinder, which is easy to dissipate heat. A dielectric discharge plasma region A is formed between the high voltage metal electrode 40 and the ceramic tube 20, and a top cover 60 is disposed on the positioning base 10. A screw hole 61 is disposed in the top cover 60, and a screw hole 61 is disposed in the screw hole 61. A connecting end 421 is disposed at the top end of the high-pressure metal electrode 40, and a wire 42 is disposed at the joint 421. The electric wire 42 is passed through the air pipe 62 and connected to a high-voltage electric end, and a gap is formed between the air pipe 62 and the electric wire 42 to make a gap. The outside air and the plasma process gas may enter the ceramic tube 20 from the gas pipe 62 for reaction.

The plasma process gas entering the ceramic tube 20 via the gas pipe 62 may be air, argon (Ar), carbon dioxide (CO2), nitrogen (N2), helium (He), oxygen (O2) or a gas that is mixed with each other.

Moreover, a rotating seat 50 is disposed on the circumferential surface of the positioning base 10, and a bottom plate 70 is disposed at a bottom end of the rotating base 50. A ground electrode 71 is disposed on the inner wall of the chassis 70, and a low temperature unbalanced electric power is formed between the ground electrode 71 and the high voltage metal electrode 40. In the slurry region B, a nozzle head 72 is disposed at the bottom end of the chassis 70 for ejecting the low temperature unbalanced plasma. In the embodiment, more than one oblique hole 73 may be disposed on the nozzle head 72, for example, a plurality of For the oblique holes 73 distributed in a radial manner, please refer to the first figure.

The disc 30 may be a stainless steel material, an internal thread is disposed in the disc 30, and an external thread is disposed on the peripheral surface of the top end of the high-voltage metal electrode 40, and the external thread may be screwed into the internal thread to make the high-voltage metal electrode 40 The consolidation is positioned within the disk 30.

A ceramic tube 20 is disposed in the positioning base 10, and an inner ring groove 11 is formed in the positioning base 10 so that the ceramic tube 20 can be placed in the positioning seat 10 and positioned on the inner ring groove 11.

A disc 30 is disposed in the ceramic tube 20, and an inner ring groove 21 is formed in the ceramic tube 20 so that the disc 30 can be placed in the ceramic tube 20 and positioned on the inner ring groove 21.

The disc 30 is provided with a plurality of obliquely extending oblique holes 31. As shown in the second figure, preferably, the plurality of inclined holes 31 are inclined at an angle of 45 degrees in the same direction, so that the airflow flowing therethrough can The turbulent flow of the vortex turbulent flow is generated in the dielectric discharge plasma region A, so that the generated plasma can be fully mixed and atomized, but it should not be limited thereto, as long as the inclination angles in the same direction can have The effect of turbulent flow of turbulent turbulence flows to varying degrees.

A metal connecting member 41 and a joint 421 are disposed at the top end of the high-voltage metal electrode 40. A through hole is disposed in the high-voltage metal electrode 40, and a layer of the groove 401 is disposed in the through hole, and another through hole is disposed in the connecting member 41. The other layer slot 411 is disposed, the connector 41 is inserted into the layer slot 401 of the high voltage metal electrode 40, and the connector 421 is inserted into the layer slot 411 of the connector 41. The connector 41 and the connector 421 are conductive metal members. The electric wire 42 can be connected to the joint 421, the air pipe 62 is connected to the outside by the insulator, and the electric wire 42 passes through the air pipe 62 and the end is connected to a power supply (not shown), so that the electric circuit can be transmitted to generate plasma. The alternating high frequency and high voltage power is applied to the high voltage metal electrode 40, wherein the ceramic tube 20 is grounded, and the dielectric discharge plasma region A formed between the high voltage metal electrode 40 and the ceramic tube 20 has a proportional size spacing. The chassis 70 is grounded, and the low temperature unbalanced plasma region B formed between the high voltage metal electrode 40 and the ground electrode 71 also has a proportional size pitch, wherein the dielectric discharge plasma region A and The interval between the proportional dimensions of the low-temperature non-equilibrium plasma region B is based on the plasma process gas and the voltages of different sizes applied thereto, and different ratios are formed, and the ratio of the input voltage to the pitch is formed. For 1~5, for example, the voltage of 5kv (仟V) can be 1~5mm; the voltage of 4kv (仟V) can be 0.8~4mm (mm); The voltage of 3kv (仟V) can be 0.6~3mm (mm); the voltage of 2kv (仟V) can be 0.4~2mm (mm); 1kv (仟) The voltage of the volts can be 0.2 to 1 mm (mm), and the relationship between the high voltage and the pitch size of the remaining volts can be deduced by analogy.

A top cover 60 is disposed on the top end of the positioning base 10, and an external thread is disposed on the peripheral surface of the top end of the positioning base 10, and an internal thread is disposed on the inner wall surface of the lower end of the top cover 60. The internal thread of the top cover 60 can be screwed on the positioning seat. The top cover 60 may be made of Teflon.

Preferably, in order to improve the plasma processing area and uniformity of the plasma jet electrode device 1, the above-mentioned positioning seat 10 of the present invention can be provided with a rotating base 50 on the circumferential surface thereof, as shown in the first figure, at the positioning seat 10 weeks. An outer ring groove 12 is disposed on the surface, a bearing 13 is disposed on the outer ring groove 12, and an inner ring groove 51 is disposed on the inner wall of the rotary base 50. The inner ring groove 51 of the rotary seat 50 is sleeved on the bearing 13 by the bearing. The rotation of the rotating seat 50 can be rotated on the surface of the positioning base 10. The bottom of the rotating base 50 is provided with a bottom plate 70, which is provided with external threads on the peripheral surface of the bottom edge of the rotating base 50, and is disposed on the inner wall surface of the chassis 70. The internal thread enables the external thread of the rotary base 50 to be screwed into the internal thread of the chassis 70 for screwing and positioning.

If the rotating base 50 is not provided, the positioning base 10 can also be directly provided with a chassis 70. The positioning base 10 and the chassis 70 can be integrally formed or screwed together.

A nozzle head 72 is disposed at a bottom end of the chassis 70, and a downwardly extending convex portion 701 is formed at a bottom end of the chassis 70, an external thread is disposed on a circumferential surface of the convex portion 701, and an internal thread is disposed on an inner wall surface of the nozzle head 72. The internal thread of the nozzle head 72 can be screwed into the external thread of the circumferential surface of the convex portion 701. The plurality of oblique holes 73 provided on the nozzle head 72 are outwardly inclined and diffused or radiated.

Referring to the third figure, the plasma jet electrode device 1 of the present invention can transmit the AC high-frequency high-voltage power provided by the power supply (not shown) to the high-voltage metal via the wire 42, the joint 421 and the connecting member 41. The electrode 40, and the atmospheric and plasma process gas at a low temperature and normal pressure, can enter the ceramic tube 20 from the gas pipe 62, and flow through the dielectric discharge plasma region A through the inclined hole 31 disposed on the disk 30. The plasma forms a turbulent flow to atomize the plasma, and the atomized plasma can generate a low temperature unbalanced plasma through the low temperature unbalanced plasma region B, and the inclined hole is added by the rotation mechanism of the nozzle head 72. The 73 jet flow design rotates the low temperature normal pressure unbalanced plasma. Therefore, the design of the invention can increase the plasma treatment area and uniformity, and make the plasma processing effect more good.

Furthermore, the nozzle head of the present invention can also be designed in a shape of a line. As shown in the fourth figure, the low-temperature atmospheric-pressure unbalanced plasma can form a linear plasma processing area by the nozzle head 74 of the in-line design. The plasma jet electrode device 1 of the invention has a wider application range. If the rotating seat 50 is provided, a uniform planar plasma processing region can be formed to improve the treatment effect.

In addition, as shown in FIG. 5, the plasma jet electrode device 1 of the present invention further includes a magnetic body 80, such as a magnet, etc., located around the nozzle head 72. Due to the arrangement of the magnetic body 80, a magnetic field can be provided. The nozzle head 72 increases the probability of collision between electrons and molecules in the plasma passing through the nozzle head 72, thereby increasing the free state, increasing the concentration of the low-temperature normal-pressure non-equilibrium plasma, and further improving the plasma treatment effect.

The plasma jet electrode assembly 1 of the present invention may further comprise a precursor flow controller (not shown) for providing and controlling the precursor to the low temperature unbalanced plasma region B, wherein the precursor is organic, a coating process gas such as inorganic or metal organic (for example, tetraethoxy decane, oxygen, polyethylene, methane, acetylene, etc.) or an etching process gas (for example, hydrogen, carbon tetrachloride, etc.) to cause the plasma jet of the present invention The electrode device 1 is applied to a coating or etching process.

According to the above concept, the present invention also provides a plasma jet electrode system 2, as shown in the sixth and seventh figures, the plasma jet electrode system 2 of the present invention comprises at least one plasma jet electrode device 1 and A bracket 90 positions the plasma jet electrode devices 1 , and the bracket 90 has at least one accommodating space, and the accommodating spaces can be combined with The plasma jet electrode device 1 is compatible, so that the plasma jet electrode device 1 can be fixed in the accommodating space, and the accommodating space is fixed to the plasma jet electrode device 1 by, for example, using a fitting structure of each other, or using a buckle. Parts such as ring screws are fixed, and the fixing method is not limited. According to the actual design requirements, the plasma jet electrode device 1 can be designed to be linearly arranged. As shown in the seventh figure, a plurality of plasma jet electrode devices 1 can also be arranged in a planar manner, as shown in the eighth and ninth views. As shown, the processing area of the low-temperature atmospheric non-equilibrium plasma can be greatly increased.

When the plasma jet electrode system 2 processes the workpiece by plasma (not shown), the temperature of the workpiece is often increased. Therefore, the plasma jet electrode system 2 of the present invention also provides a cooling device 91. Referring to FIG. 11 and FIG. 11 , the cooling device 91 is disposed at one side end of the bracket 90. As shown in FIG. 11 , when the bracket 90 moves and moves the plasma jet electrode device 1 to process the workpiece, the cooling is performed. The device 91 is an air-cooled cooling device that provides a flow of gas downwardly directed toward the workpiece to provide thermal convection around the workpiece, thereby reducing the temperature of the workpiece itself.

In addition, the plasma jet electrode system 2 of the present invention further includes a guiding device 92, which is a roller, is connected below the bracket 90 for guiding the bracket 90 to move along a predetermined direction to maintain the plasma jet. The fixed distance between the electrode device 1 and the workpiece (not shown) not only provides uniformity of plasma processing, but also maintains stable operation of the bracket 90; in addition, the guiding device 92 can be connected by an adjustable connecting member 920. Below the bracket 90, the connecting member 920 has a function of height adjustment, so that the guiding device 92 can meet the requirements of different processing workpieces from the plasma jet electrode device 1, so that the plasma jet electrode system 2 has more flexibility. The application meets the specific application goals required by the user.

In summary, the plasma jet electrode device 1 and the plasma jet electrode system 2 of the present invention improve the processing area and uniformity of the low-temperature atmospheric-pressure non-equilibrium plasma, and make the plasma jet electrode device have a wider application range. It can be used not only for cleaning but also for etching, which improves the industrial application of the plasma jet electrode device and its system, and has great industrial value.

Although the present invention has been disclosed above in the preferred embodiments, it is not intended to limit the present invention. The invention is to be understood as being limited by the scope of the appended claims.

10‧‧‧ Positioning Block

11‧‧‧ Inner ring groove

12‧‧‧ outer ring groove

13‧‧‧ Bearing

20‧‧‧Ceramic tube

21‧‧‧ Inner ring groove

30‧‧‧ disc

31‧‧‧ oblique hole

40‧‧‧High-voltage metal electrode

401‧‧‧ class slot

41‧‧‧Connecting parts

411‧‧‧ class slot

42‧‧‧Wire

421‧‧‧ joint

50‧‧‧ rotating seat

51‧‧‧ Inner ring groove

60‧‧‧ top cover

61‧‧‧ screw holes

62‧‧‧ trachea

70‧‧‧Chassis

701‧‧‧ convex

71‧‧‧Ground electrode

72, 74‧‧‧ nozzle head

73‧‧‧ oblique hole

80‧‧‧ magnetic body

90‧‧‧ bracket

91‧‧‧Cooling device

92‧‧‧ Guidance device

920‧‧‧Connecting parts

A‧‧‧ dielectric discharge plasma area

B‧‧‧Low temperature unbalanced plasma area

The first figure is a schematic cross-sectional view of a plasma jet electrode device of the present invention.

The second figure is a schematic perspective view of a disk in the plasma jet electrode assembly of the present invention.

The third figure is a schematic cross-sectional view of the operation of the plasma in the plasma jet electrode assembly of the present invention.

The fourth figure is a schematic cross-sectional view of another plasma jet electrode device of the present invention.

Figure 5 is a cross-sectional view showing still another plasma jet electrode assembly of the present invention.

Figure 6 is a perspective view of the plasma jet electrode system of the present invention.

The seventh figure is a schematic top view of the plasma jet electrode system in the sixth figure.

The eighth figure is a perspective view of another plasma jet electrode system of the present invention.

The ninth drawing is a top plan view of the plasma jet electrode system in the eighth figure.

Figure 11 is a perspective view showing the addition of a cooling device to the plasma jet electrode system of the present invention.

Figure 11 is a side cross-sectional view of the plasma jet electrode system of the tenth figure.

Figure 12 is a perspective view showing the addition of a guiding device for the plasma jet electrode system of the present invention.

10. . . Positioning seat

11. . . Inner ring groove

12. . . Outer ring groove

13. . . Bearing

20. . . ceramic pipe

twenty one. . . Inner ring groove

30. . . disc

31. . . Oblique hole

40. . . High voltage metal electrode

401. . . Hierarchy slot

41. . . Connector

411. . . Hierarchy slot

42. . . wire

421. . . Connector

50. . . Rotating seat

51. . . Inner ring groove

60. . . Top cover

61. . . Screw hole

62. . . trachea

70. . . Chassis

701. . . Convex

71. . . Ground electrode

72. . . Nozzle head

73. . . Oblique hole

A. . . Dielectric discharge plasma region

B. . . Low temperature unbalanced plasma region

Claims (22)

A plasma jet electrode device having a positioning seat, wherein a ceramic tube is disposed in the positioning seat, and a disc is disposed in the ceramic tube, and the disc is provided with a plurality of inclined holes obliquely penetrating in the same direction, the circle A high-voltage metal electrode is disposed in the disk, and a dielectric discharge plasma region is formed between the high-voltage metal electrode and the ceramic tube. A bottom plate is disposed at a bottom end of the positioning seat, and a ground electrode is disposed on an inner wall of the chassis. A low temperature unbalanced plasma region is formed between the electrode and the high voltage metal electrode, and a nozzle head is disposed at the bottom end of the chassis for ejecting the low temperature unbalanced plasma. A plasma jet electrode device having a positioning seat, wherein a ceramic tube is disposed in the positioning seat, and a disc is disposed in the ceramic tube, and the disc is provided with a plurality of inclined holes obliquely penetrating in the same direction, the circle A high-voltage metal electrode is disposed in the disk, and a dielectric discharge plasma region is formed between the high-voltage metal electrode and the ceramic tube, and a rotating seat is disposed on the circumferential surface of the positioning seat, so that the positioning seat can rotate relative to the rotating base Movement, a bottom plate is disposed at a bottom end of the rotating base, a ground electrode is disposed on an inner wall of the chassis, a low temperature unbalanced plasma region is formed between the ground electrode and the high voltage metal electrode, and a nozzle is disposed at a bottom end of the chassis The head is used to eject the low temperature unbalanced plasma. The plasma jet electrode device according to claim 1 or 2, wherein a dielectric discharge plasma region formed between the high voltage metal electrode and the ceramic tube has a pitch, wherein the high voltage metal is introduced The ratio of the voltage of the electrodes to the spacing ranges between 1 and 5. The plasma jet electrode device according to claim 1 or 2, wherein a low temperature unbalanced plasma region formed between the high voltage metal electrode and the ground electrode has a pitch, and a voltage of the high voltage metal electrode is passed. The ratio to this spacing ranges from 1 to 5. The plasma jet electrode device of claim 1 or 2, wherein the positioning seat is provided with a top cover, a screw hole is disposed in the top cover, and a gas pipe is disposed in the screw hole, and the high pressure metal electrode is disposed A connector is arranged at the top end, and a wire is connected to the connector, the wire is passed out of the air pipe and connected to a high voltage end, and a gap is formed between the air pipe and the wire, so that outside air and plasma process gas can enter through the air pipe. The reaction is carried out in the ceramic tube. The plasma jet electrode device according to claim 1 or 2, wherein an internal thread is disposed in the disk, and an external thread is disposed on a peripheral surface of the top end of the high-voltage metal electrode to make the high-voltage metal electrode externally threaded. The screw is disposed in the internal thread of the disc. The plasma jet electrode device of claim 6, wherein the disk is provided with a plurality of obliquely penetrating oblique holes that are inclined at an angle of 45 degrees in the same direction. The plasma jet electrode device of claim 2, wherein an outer ring groove is disposed on a circumferential surface of the positioning seat, a bearing is disposed at the outer ring groove, and an inner ring groove is disposed on an inner wall of the rotating seat. The inner ring groove of the rotating seat is sleeved on the bearing, so that the positioning seat can perform a rotational movement relative to the rotating base. A plasma jet electrode device according to claim 1 or 2, wherein the At least one inclined hole is provided on the nozzle head. The plasma jet electrode device according to claim 1 or 2, wherein the nozzle head is provided with a plurality of inclined holes and distributed in a diffuse or radial manner. The plasma jet electrode device according to claim 1 or 2, wherein the outlet of the nozzle head is in a shape of a line. The plasma jet electrode device of claim 1 or 2, further comprising a magnetic body located around the nozzle tip to provide a magnetic field to the nozzle tip. The plasma jet electrode device of claim 1 or 2, wherein the high voltage metal electrode is a hollow cylinder. The plasma jet electrode device of claim 1 or 2, further comprising a precursor flow controller for providing and controlling a precursor to the low temperature unbalanced plasma region, The device can be applied to a coating or etching process. The plasma jet electrode device according to claim 14, wherein the precursor is a coating process gas or an etching process gas such as organic, inorganic or metal organic. A plasma jet electrode system comprising at least one plasma jet electrode device according to claim 1 or 2, and a bracket having at least one accommodating compatibility with the plasma jet electrode device Space for fixing the plasma jet electrode device. The plasma jet electrode system of claim 16, further comprising a plurality of plasma jet electrode devices, wherein the plurality of plasma jet electrode devices are arranged in a linear or planar manner and disposed on the bracket . The plasma jet electrode system of claim 16, further comprising a cooling device disposed at one side of the bracket for cooling the workpiece processed by the plasma jet electrode system. The plasma jet electrode system of claim 16, wherein the cooling device is an air cooled cooling device. The plasma jet electrode system of claim 16, further comprising a guiding device coupled to the underside of the bracket for guiding the bracket to move in a predetermined direction. The plasma jet electrode system of claim 20, wherein the guiding device is a roller. The plasma jet electrode system of claim 20, wherein the guiding device is coupled to the underside of the bracket by an adjustable connecting member.