200840426 九、發明說明： 【發明所屬之技術領域】 本發明是關於一種電漿喷流電極裝置，尤指一種可在低溫常 壓下製造出非平衡式電滎噴流，而能改善電漿處理面積與均勻 性，使旎達到更理想之工件表面處理效果的電漿喷流電極裝置。 【先前技術】 按，近年來利用氣體游離（電漿）原理，以氣態氧化法去除 污染物已陸續研究發射，例如f子束法（EleetIOnBeam)、電晕200840426 IX. Description of the Invention: [Technical Field] The present invention relates to a plasma jet electrode device, and more particularly to an unbalanced electric squirt jet which can be manufactured under low temperature and normal pressure, thereby improving the plasma processing area. A plasma jet electrode device with uniformity that allows the crucible to achieve a more desirable surface finish. [Prior Art] According to the principle of gas free (plasma) in recent years, the removal of pollutants by gaseous oxidation has been studied, such as the F beamlet method (EleetIOnBeam), corona
放龟法（Corona Discharge)、微波法（Microwave)、高週波電赞 (Radio Frequency，RF)、介電質放電法(Dielectric Barrier Discha勝 DBD)等’皆已被證實具有—定的處理效果，其中，介電質放 士因，常壓下即可進行有效放電，且成本較低，為目前非熱電裝 除1物的研究主流之―，且該介電質電漿放電法已被廣泛應 用於塑膠薄膜印製處理、礦石靜電篩選分離器、臭氧產生“、表 =改質、表面清洗、放射廢棄物以及排放廢氣等之處理工程等， 二该非熱J漿仍屬於偏高溫狀態，且對於卫件表面處理，仍有 =-隅及處理效果不均之缺點，尚有待進 【發明内容】 σ ιίΐϊΐ供—種1電聚嘴流電極裝置」，其具有—定位座，於 二钭二二。陶3，陶*管中設置—圓盤’圓盤上佈設數個 中設置—高壓金屬電極，高壓金屬電極與 庙#絲/广山"电貝放電電漿區域，定位座周面設置一旋轉 置一底盤，底盤内壁設置-接地電極，接地電 置二成—低溫非平衡式電聚區域，底盤底端設 置y嘴頭，嘴嘴碩上設置數個斜孔。 斜孔流過介電質放電電 200840426 以霧化，而於後續之低溫非平衡式電漿區域產生低溫非平衡式 漿，並藉由喷嘴頭旋轉機制外加斜孔喷流設計，將低溫常壓^平 衡式電漿旋轉喷出，即可改變電漿處理面積與均勻性。 為讓本發明之上述和其他目的、特徵和優點能更明顯易懂， 下文特舉較佳實施例，並配合所附圖式，作詳細說明如下'。 【實施方式】 { 1 請配合參照第一圖及第二圖所示，本發明之Γ電漿嘴流電極 裝置」，其具有一定位座10，於定位座10中設置一陶瓷管&电 瓷管20中設置一圓盤30,圓盤3〇上佈設數個傾斜貫穿的斜孔31， f立體示意圖如第二圖所示，圓盤3〇中設置一高壓金屬電極仞， 高壓金屬電極40為一中空圓柱體，較易於散熱，高壓金屬電極4〇 與陶瓷管20間形成一介電質放電電漿區域a，另外，以及定位 ^上設置一頂蓋6〇，頂蓋6〇中設置一螺孔61，螺孔61中設置^ ^管62,高壓金屬電極4〇之頂端設置一接頭421，接頭犯^處 ，，置一電線42，電線42由氣管62穿出且接續至一高壓電二， 氣管62與電線42之間形成空隙，使外界空氣以及電漿盤 可由氣管62進入陶莞管20中進行反應。 产上述經由氣管62處進入陶瓷管20中的電漿製程氣體可為空 氣（Air)、氬氣（Ar)、二氧化碳（c〇2)、氮氣（N2) '工 氧氣（〇2)献其被齡之髓。 H (He)、 又，定位座10周面設置一旋轉座50，旋轉座5〇之底端嗖 盤70，底盤70内壁設置一接地電極71，接地電極71_盥^ ，屬電極40間形成一低溫非平衡式電漿區域B，底盤7〇 ^ 口又置一噴嘴頭72，用以將低溫非平衡式電漿喷出，苴中，以未奋 ;喷、:頭L2上可設置一個以上的斜孔73，例如複數個： 放射線方式分佈之斜孔73，請參照第一圖所示。 上述之圓盤30可為不銹鋼材，於圓盤3〇中設置一内螺紋， 以及在高壓金屬電極4〇頂端周面設置-外歡，外螺螺^ 内螺紋中，使高壓金屬電極40固結定位在圓盤3〇之中。’、"又 200840426 上述定位座10中設置一陶奢瞢20，b , 環#11= 疋在定位座10中形成内 %槽11，使陶是官20可置入定位座10而定位 上述陶究管2〇中設置-圓盤％，是在陶 ;上 槽2卜使圓盤30可置入陶究管2〇中且定位在是内環槽21^成衣 - 盤3G上佈設複數個傾斜貫穿的斜孔3卜如第二圖所 不，李父佳者，該等複數個斜孔3“系呈同方向#度的傾:g，斤 使流經其間喊流能於介㈣放電賴 ;ς 斜角度均可以具有不同程度產生旋渦急滿 V ΐΪίίΐ屬電極4〇頂端設置一金屬連接件41及接頭42i， G中設置—穿孔，且於穿孔中設置一階層槽 4二41 ^設置另一穿孔，穿孔中設置另一階層槽 目丨/ f接件41插设在咼壓金屬電極40的階層槽401中，接頭421 ΪΪΐίίί接件41的階層槽411中，連接件41及接頭421皆 i外i件’、而可將電線42連接至接頭421，氣管62為絕緣體 7 及電線42穿出氣管62且末端接至一電源供應器 ( 使電氣線路能傳送產生電浆使用之交流高頻高壓 ^厘=同£金屬電極40上，其中，陶瓷管20接地處理，且高壓 j電極4G與喊管2G之間所形成的介電質放電電漿區域Α呈 比例尺寸的間距，底盤70接地處理，高壓金屬電極40與i i包極71之間所形成的低溫非平衡式電漿區域B亦具有一比例尺 間距，其中，所述介電質放電電漿區域A與低溫非平衡式電 ^所具有的比例尺寸之間距，是依通人其中的電漿製程氣 及所她予大小不同的電壓，而形成不同的比例尺寸，豆通入雷 壓與間距的比值為1〜5，例如： 通入5kv (仟伏特）的電壓，其間距尺寸可為1〜5mm; 敕、通入4kv (仟伏特）的電壓，其間距尺寸可為0·8〜4mm (公 釐）； 200840426 董）;(仔伏特）的電壓，其間距尺寸可為0.6〜3mm (公 釐）通入2W (仟伏特）的電壓，距尺寸可為0.4〜2mm (公 釐電壓，其間距尺寸可為0.2〜lmm (公 類推。 俯倾以上的高縣制距尺相_可依此 面設置:螺紋，1:二端5-山頂蓋60 ’是在定位座10頂端周Corona Discharge, Microwave, Radio Frequency (RF), Dielectric Barrier Discha (DBD), etc. have all been proven to have a definite effect. Among them, the dielectric quality is discharged, the effective discharge can be carried out under normal pressure, and the cost is low, which is the mainstream of the research on non-thermoelectric charging, and the dielectric plasma discharge method has been widely used. In the processing of plastic film printing, ore electrostatic screening separator, ozone generation, table = modification, surface cleaning, radioactive waste, and exhaust gas treatment, etc., the non-thermal J slurry is still in a high temperature state, and For the surface treatment of the guards, there are still some disadvantages of =-隅 and uneven treatment effect, and there is still a need to enter [invention] σ ιίΐϊΐ for a kind of 1 electric condenser flow electrode device, which has a positioning seat, in the second two two. Pottery 3, pottery * tube set - disc 'disc set on several discs - high-voltage metal electrode, high-voltage metal electrode and temple #丝 / 广山" electric shell discharge plasma area, positioning seat circumferential surface set one Rotating a chassis, the inner wall of the chassis is provided with a grounding electrode, and the grounding is electrically placed at 20% - a low-temperature unbalanced electric gathering area, a bottom end of the chassis is provided with a y-mouth, and a plurality of inclined holes are arranged on the nozzle. The oblique hole flows through the dielectric discharge electric power 200840426 to atomize, and the low temperature unbalanced slurry is generated in the subsequent low temperature unbalanced plasma region, and the nozzle head rotation mechanism is applied to the oblique hole jet design to lower the atmospheric pressure ^The balanced plasma is sprayed out to change the plasma treatment area and uniformity. The above and other objects, features, and advantages of the present invention will become more apparent and understood. [Embodiment] { 1 Please refer to the first and second figures, the Γ Γ 流 流 流 流 」 , , 具有 具有 具有 具有 Γ Γ Γ Γ Γ Γ Γ Γ Γ Γ Γ Γ Γ Γ Γ Γ Γ Γ Γ Γ Γ A disc 30 is disposed in the tube 20, and a plurality of obliquely extending oblique holes 31 are disposed on the disc 3, and a perspective view of the f is as shown in the second figure. A high-voltage metal electrode 仞 is disposed in the disc 3, and the high-voltage metal electrode 40 is disposed. It is a hollow cylinder, which is easier to dissipate heat. A dielectric discharge plasma region a is formed between the high-voltage metal electrode 4 and the ceramic tube 20. In addition, a top cover 6 is disposed on the positioning surface, and the top cover 6 is disposed in the top cover. a screw hole 61, a screw hole 61 is provided with a tube 62, a top end of the high-voltage metal electrode 4 is provided with a joint 421, and the joint is broken. A wire 42 is placed, and the wire 42 is pierced by the gas pipe 62 and connected to a high Piezoelectric two, a gap is formed between the gas pipe 62 and the electric wire 42, so that the outside air and the electric disk can be reacted by the gas pipe 62 into the pottery tube 20. The plasma process gas produced into the ceramic tube 20 via the gas pipe 62 can be air (Air), argon (Ar), carbon dioxide (c〇2), nitrogen (N2), and oxygen (〇2). The marrow of age. H (He), and a rotating seat 50 is disposed on the circumferential surface of the positioning base 10, and the bottom end of the rotating base 5 is mounted on the tray 70. A ground electrode 71 is disposed on the inner wall of the chassis 70, and the ground electrode 71_盥^ is formed between the electrodes 40. a low-temperature unbalanced plasma region B, and a nozzle head 72 is disposed on the bottom plate of the chassis for discharging low-temperature unbalanced plasma, which is immersed in the furnace, and is sprayed, and a head L2 can be disposed. For the above-mentioned oblique holes 73, for example, a plurality of oblique holes 73 which are distributed by radiation, please refer to the first figure. The disc 30 may be made of stainless steel, and an internal thread is disposed in the disc 3〇, and a peripheral wall of the high-pressure metal electrode 4〇 is disposed, and the high-voltage metal electrode 40 is disposed in the external screw. The consolidation is positioned in the disc 3〇. ', " and 200840426 The above positioning seat 10 is provided with a ceramic 瞢 20, b, ring #11 = 疋 forming an inner % slot 11 in the positioning seat 10, so that the ceramic 20 can be placed into the positioning seat 10 and positioning the above The pottery tube 2 set - disc %, is in the pottery; the upper slot 2 makes the disc 30 can be placed into the pottery tube 2〇 and is positioned in the inner ring groove 21^ garment-disc 3G The oblique hole 3 that is obliquely penetrated is as shown in the second figure. In the case of Li Fujia, the plurality of inclined holes 3 are inclined in the same direction by #度: g, so that the flow can flow through the medium (four) discharge. Lai; ς Angle of inclination can have different degrees of vortex rushing V ΐΪ ΐ ΐ ΐ 4 4 4 4 4 4 4 4 4 4 4 4 4 4 4 4 4 4 4 4 4 4 4 4 4 4 4 4 4 4 4 4 4 4 4 4 4 4 4 4 4 4 4 4 4 4 4 4 4 4 4 4 4 4 4 4 4 4 4 4 4 4 4 4 4 4 4 4 4 4 4 4 4 4 4 4 4 4 4 4 4 4 4 4 4 4 4 4 Another perforation is provided in the perforation, and another layer of the trough/f connector 41 is inserted in the trough groove 401 of the rolling metal electrode 40, the joint 421 is 阶层ίίί in the trough groove 411 of the joint 41, the connecting member 41 and the joint 421 The wire 42 is connected to the joint 421, and the gas pipe 62 is the insulator 7 and the wire 42 is passed out of the gas pipe 62 and the end is connected to a wire. Source supply (allows the electric circuit to transmit the alternating high frequency high voltage used to generate the plasma) = the same as the metal electrode 40, wherein the ceramic tube 20 is grounded, and the high voltage j electrode 4G and the shout tube 2G are formed. The dielectric discharge plasma region Α is proportionally spaced, the chassis 70 is grounded, and the low temperature unbalanced plasma region B formed between the high voltage metal electrode 40 and the ii envelope 71 also has a scale spacing. The distance between the dielectric discharge plasma region A and the low-temperature unbalanced electricity has a proportional size between the plasma process gas and the voltage of different sizes. The ratio of the pressure of the bean to the lightning pressure is 1~5. For example: the voltage of 5kv (仟V) can be 1~5mm; the voltage of 4kv (仟V) can be used. It can be 0·8~4mm (mm); 200840426 Dong); (Wat Volt) voltage, the pitch size can be 0.6~3mm (millimeter) and the voltage can be 2W (仟V), the distance can be 0.4 ~2mm (millimeter voltage, the pitch size can be 0.2~lmm The analogy of the high-counting ruler phase above the tilting _ can be set according to this: thread, 1: two-end 5 - the top cover 60 ’ is at the top of the top of the positioning seat 10
之内螺紋可螺設蚁歡，頂蓋60 材質可為鐵氟龍。 頂鳊之外螺紋上’其中，頂蓋60之 句度=明電極裝置1之電漿處理面積與均 所示，、疋4座10周面可设置一旋轉座50,如第一圖 神51 5〇内1扠置内展槽51，旋轉座50之内環 “位Hi 上’藉由軸承13的轉動’可使旋轉座50可 3 絲&表面進仃旋轉動作，該旋轉座50底端設置一底盤70， 轉座50底緣周面設置外敎，以及在底盤7Q内壁面設置 =、、文’使旋轉座5G之外敎可螺人錢7G之内敎中加以螺 合疋位。 =無旋轉座50的設置，該定位座1〇亦可以直接設置一底盤 ，定位座10與底盤70可以以一體成形的方式製成，或相互間 以螺合方式連接亦可。 一上述之底盤7〇底端設置一喷嘴頭72，是在底盤7〇底端形成 「向下延伸的凸部701，於凸部701周面設置外螺紋，以及在喷嘴 頭72的内壁面上設置内螺紋，喷嘴頭72的内螺紋可螺合在凸部 701周面的外螺紋中，其中，喷嘴頭72上所設置的複數個斜孔73， 係呈向外傾斜之擴散狀或是放射線狀分佈。 凊參照第三圖所示’本發明之電漿噴流電極裝置1可將電源 200840426 接頭42:及上，，流祕壓電力_^^ 電漿製程氣體，祕金屬電極仙，而低溫常壓的大氣與 , Μ 62進清綠2。圓盤3〇 喂區诚Β姦>±柄、w & τ化務化的龟漿可經由低溫非平衡式電 加斜ί 73^ ^ft衡式電裝，並藉由喷嘴頭72之旋轉機制外 本發明之設常壓非平衡式電漿旋轉噴出，因此， 處^效作日加電核理面積與均勻性，使更具良好的電漿 _再者丄本發明之噴嘴頭？2亦可以設計成一 二，低溫常壓非平衡式電聚藉由—字形設計的喷嘴頭乃 電轉^f明之_流電轉置1應用範 電Si區料—均勾的面狀 此外，請參照帛五騎* ’本侧之賴賴電 匕3 —磁性體80，如磁鐵等，位於噴嘴頭72之月鬥、 體80之設置，可以提供一磁場給喷嘴頭、72，提°言圍’|於^磁性 之電聚巾電子與分子_互碰撞解，使其^ 温常壓非平财棘麟濃度，’使低 本發明之電漿喷流電極裝置丨可進一步包含。 ，圖中未顯公用以提供並控制前驅物至低 區域B中’其中刚驅物係為有機、無機或金屬有機二， 體（例如··四乙氧基矽烷、氧氣、聚乙烯、甲烷、7 製耘虱 刻製程氣體(例如：氳氣、四氯化碳等)，使本 ，J蝕 極裝置1藉以應用至鍍膜或蝕刻製程上。 電水贺机電 巧據上述之構想，本發明亦提供一種電漿喷流電 主 多照第六圖以及第七圖所示，本發明之電漿喷流電：、、、二2 至少-個電漿喷流雜裝置1，並以一支架9〇將^包含 極裝置1 ^位，根據實際的設計需求’可以設計將 -11- 200840426 裝置1以線性排列，如第七 電極裝置！以面狀排列，如匕:=利用複數個電漿喷流 上述電漿賀流電極系償 ^，往往會有使辑溫料高社件（料未顯示） 電極系統2亦提供—冷卻裝 /生，故本㈣之電浆喷流 卻裝置91設置於支架90之_側^^照第十圖與第十-圖，冷 移動並令電漿喷流電極裝置！ 弟十一圖所示，當支架9〇 為一氣冷式冷卻裝置，可，^工件時，該冷卻裝置91係 ，工件=之熱對流，進而降^^向工件，使提供該 5 %，其係為滾輪，連接於2更進-步包含_導引裝 顯示）之固定距ί，1與工件⑽中未 架90之穩定運作；此外&導引裝置^2H$ ’亦可以維持支 件920連接於支架90下方，藉由連接件2有；可調整之連接 功能，使導引裝置92可以舞人具有可以調整高度的 1之距離的要求，使«錢i極電極裝置 使用者所需的特定應用目的。 有更祕的應用，符合 n所述，本發明之電漿噴流電極褒置u ΐϊΐ價二_漿喷流電極裝置及其系統之產業應用 私明雖ff發日犯啸佳實關揭絲上，财並_以限定本 =此ΐ何翻此技藝者，在不脫離本發明之精神和範圍内i 更動與潤飾，因此本發明之保護範圍當視後附之申i 專利耗圍所界定者為準。 明 【圖式簡單說明】 -12- 200840426 第一圖為本發明之電漿喷流電極裝置的剖面示意圖。 第二圖為本發明之電漿喷流電極裝置中圓盤的立體示意圖。 第三圖為本發明之電漿喷流電極裝置中電漿運作的剖面示意圖。 第四圖為本發明之另一電漿喷流電極裝置的剖面示意圖。 第五圖為本發明之再一電漿喷流電極裝置的剖面示意圖。 第六圖為本發明之電漿喷流電極系統的立體示意圖。 第七圖為第六圖中電漿喷流電極系統的俯視示意圖。 第八圖為本發明之另一電漿喷流電極系統的立體示意圖。 第九圖為第八圖中電漿喷流電極系統的俯視示意圖。 第十圖為本發明之電漿喷流電極系統增設冷卻裝置的立體示意 圖。 第十一圖為第十圖中電漿喷流電極系統的側視剖面示意圖。 第十二圖為本發明之電漿喷流電極系統增設導引裝置的立體示意 圖。 【主要元件符號說明】 10 定位座 11 内環槽 12 外環槽 13 軸承 20 陶瓷管 21 内環槽 30 圓盤 31 斜孔 40 高壓金屬電極 401 :階層槽 41 :連接件 411 :階層槽 42 =電線 421 :接頭 -13- 200840426 50 旋轉座 51 内環槽 60 頂蓋 61 螺孔 62 氣管 70 底盤 701 :凸部 71 :接地電極 72 :喷嘴頭 73 :斜孔 80 :磁性體 90 :支架 91 :冷卻裝置 92 :導引裝置 A:介電質放電電漿區域 B:低溫非平衡式電漿區域 -14-The inner thread can be screwed to the ant, and the top cover 60 can be made of Teflon. On the outer thread of the top cymbal, the degree of the top cover 60 = the plasma treatment area of the electrode assembly 1 is shown, and the turret 4 can be provided with a rotating seat 50, such as the first figure 51 The inside of the inner ring 51 of the inner ring of the rotary seat 50, the inner ring of the rotary seat 50 "on the position Hi" can be rotated by the bearing 13, so that the rotary seat 50 can be rotated by the surface of the wire 50. The bottom end is provided with a bottom plate 70, and the outer surface of the bottom edge of the rotating base 50 is provided with an outer cymbal, and the inner wall of the bottom plate 7Q is provided with a yoke, and the yoke is screwed into the inner wall of the rotating base 5G. If there is no rotation seat 50, the positioning seat 1〇 can also be directly provided with a chassis, and the positioning seat 10 and the chassis 70 can be integrally formed or screwed together. A nozzle head 72 is disposed at the bottom end of the chassis 7 at the bottom end of the chassis 7 to form a downwardly extending convex portion 701, an external thread is provided on the circumferential surface of the convex portion 701, and an internal thread is provided on the inner wall surface of the nozzle head 72. The internal thread of the nozzle head 72 can be screwed into the external thread of the circumferential surface of the convex portion 701, wherein the plural number set on the nozzle head 72 The inclined holes 73 are diffused or radiated in an outwardly inclined manner. 凊 Referring to the third figure, the plasma jet electrode device 1 of the present invention can connect the power source 200840426 to the joint 42: Electricity _^^ Plasma process gas, secret metal electrode, and low temperature and atmospheric atmosphere, Μ 62 into clear green 2. Disc 3 〇 feeding area sincere traits > shank, w & τ chemicalization The tortoise can be ejected by the low-temperature unbalanced electric-plus-electricity and the external-pressure unbalanced plasma of the present invention by the rotation mechanism of the nozzle head 72, and therefore, Effective for daily powering of nuclear area and uniformity, so that more good plasma _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ The nozzle head is electrically turned into a ^f Ming _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ , located in the nozzle head 72 of the moon bucket, body 80, can provide a magnetic field to the nozzle head, 72, to improve the circumference of the | The electrons and molecules of the towel collide with each other to make the temperature and pressure of the non-flat thorns, and the plasma jet electrode device of the present invention can be further included. The figure is not common to provide and control the precursor. From the substance to the low area B, where the precursor is organic, inorganic or metal organic, such as tetraethoxy decane, oxygen, polyethylene, methane, 7 etching process gas (for example: 氲Gas, carbon tetrachloride, etc., so that the J etched device 1 is applied to the coating or etching process. According to the above concept, the present invention also provides a main multi-photograph of the plasma jet current. In the sixth and seventh figures, the plasma jet of the present invention:,,, 2, 2, at least one plasma jet flow device 1, and a bracket 9 is used to include the pole device 1 position. According to the actual design requirements, it is possible to design the -11-200840426 device 1 in a linear arrangement, such as the seventh electrode device! Arranged in a plane shape, such as 匕: = using a plurality of plasma jets to flow the above-mentioned plasma flow current system to compensate ^, often there will be a series of high temperature materials (not shown) electrode system 2 is also provided - cooling equipment / Health, so the plasma spray device 91 of this (4) is placed on the side of the bracket 90 ^ according to the tenth and tenth - map, cold moving and making the plasma jet electrode device! As shown in the eleventh figure, when the bracket 9 is an air-cooled cooling device, when the workpiece is used, the cooling device 91 is subjected to heat convection of the workpiece, and then the workpiece is lowered to the workpiece to provide the 5%. It is a roller, connected to the 2 further steps, including the _guide display, the fixed distance ί,1 and the workpiece (10) in the stable operation of the frame 90; in addition, the & guide device ^2H$ ' can also maintain the support The 920 is connected under the bracket 90, and has an adjustable connecting function, so that the guiding device 92 can have a requirement that the dancer can adjust the height of one distance, so that the user of the money electrode device needs Specific application purpose. There is a more secret application, in accordance with n, the plasma jet electrode of the present invention is placed on the ΐϊΐ 二 _ 浆 喷 喷 喷 喷 电极 及其 及其 及其 及其 及其 及其 ff ff ff ff ff ff ff ff ff ff ff ff , and the scope of protection of the present invention is defined by the scope of the invention. Prevail. BRIEF DESCRIPTION OF THE DRAWINGS [Description of the Scheme] -12- 200840426 The first figure is a schematic cross-sectional view of the plasma jet electrode device of the present invention. The second figure is a schematic perspective view of a disk in the plasma jet electrode assembly of the present invention. The third figure is a schematic cross-sectional view of the operation of the plasma in the plasma jet electrode assembly of the present invention. The fourth figure is a schematic cross-sectional view of another plasma jet electrode device of the present invention. Figure 5 is a cross-sectional view showing still another plasma jet electrode assembly of the present invention. Figure 6 is a perspective view of the plasma jet electrode system of the present invention. The seventh figure is a schematic top view of the plasma jet electrode system in the sixth figure. The eighth figure is a perspective view of another plasma jet electrode system of the present invention. The ninth drawing is a top plan view of the plasma jet electrode system in the eighth figure. Figure 11 is a perspective view showing the addition of a cooling device to the plasma jet electrode system of the present invention. Figure 11 is a side cross-sectional view of the plasma jet electrode system of the tenth figure. Fig. 12 is a perspective view showing the addition of a guiding device for the plasma jet electrode system of the present invention. [Main component symbol description] 10 Positioning seat 11 Inner ring groove 12 Outer ring groove 13 Bearing 20 Ceramic tube 21 Inner ring groove 30 Disc 31 Inclined hole 40 High-voltage metal electrode 401: Hierarchical groove 41: Connector 411: Hierarchical groove 42 = Wire 421: Connector-13- 200840426 50 Rotating seat 51 Inner ring groove 60 Top cover 61 Screw hole 62 Air pipe 70 Chassis 701: Projection 71: Ground electrode 72: Nozzle head 73: Inclined hole 80: Magnetic body 90: Bracket 91: Cooling device 92: guiding device A: dielectric discharge plasma region B: low temperature unbalanced plasma region-14-