TWI390065B - Sputtering device - Google Patents
Sputtering device Download PDFInfo
- Publication number
- TWI390065B TWI390065B TW096101144A TW96101144A TWI390065B TW I390065 B TWI390065 B TW I390065B TW 096101144 A TW096101144 A TW 096101144A TW 96101144 A TW96101144 A TW 96101144A TW I390065 B TWI390065 B TW I390065B
- Authority
- TW
- Taiwan
- Prior art keywords
- targets
- power
- sputtering apparatus
- pair
- bus bar
- Prior art date
Links
- 238000004544 sputter deposition Methods 0.000 title claims description 34
- 230000010355 oscillation Effects 0.000 claims description 20
- 230000004907 flux Effects 0.000 claims description 5
- 229910052737 gold Inorganic materials 0.000 claims description 5
- 229910052709 silver Inorganic materials 0.000 claims description 5
- 239000000203 mixture Substances 0.000 claims description 3
- 230000000712 assembly Effects 0.000 claims description 2
- 238000000429 assembly Methods 0.000 claims description 2
- 239000000758 substrate Substances 0.000 description 14
- 239000010408 film Substances 0.000 description 9
- 239000007789 gas Substances 0.000 description 8
- 239000000463 material Substances 0.000 description 8
- 238000001514 detection method Methods 0.000 description 5
- 238000009434 installation Methods 0.000 description 5
- 238000000034 method Methods 0.000 description 5
- 230000002093 peripheral effect Effects 0.000 description 5
- 230000000694 effects Effects 0.000 description 4
- 230000008569 process Effects 0.000 description 4
- 238000012545 processing Methods 0.000 description 4
- 230000015572 biosynthetic process Effects 0.000 description 3
- 238000006243 chemical reaction Methods 0.000 description 3
- 238000012546 transfer Methods 0.000 description 3
- 239000004020 conductor Substances 0.000 description 2
- 239000011810 insulating material Substances 0.000 description 2
- 150000002500 ions Chemical class 0.000 description 2
- 230000005415 magnetization Effects 0.000 description 2
- 229910000838 Al alloy Inorganic materials 0.000 description 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 230000008602 contraction Effects 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000003628 erosive effect Effects 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
- 239000000696 magnetic material Substances 0.000 description 1
- 238000001755 magnetron sputter deposition Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 239000012495 reaction gas Substances 0.000 description 1
- 238000005546 reactive sputtering Methods 0.000 description 1
- 238000001179 sorption measurement Methods 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 210000003437 trachea Anatomy 0.000 description 1
- 230000032258 transport Effects 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/35—Sputtering by application of a magnetic field, e.g. magnetron sputtering
- C23C14/352—Sputtering by application of a magnetic field, e.g. magnetron sputtering using more than one target
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/3464—Sputtering using more than one target
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
- H01J37/3402—Gas-filled discharge tubes operating with cathodic sputtering using supplementary magnetic fields
- H01J37/3405—Magnetron sputtering
- H01J37/3408—Planar magnetron sputtering
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
- H01J37/3411—Constructional aspects of the reactor
- H01J37/3444—Associated circuits
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Plasma & Fusion (AREA)
- Analytical Chemistry (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Physical Vapour Deposition (AREA)
- Plasma Technology (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2006003445A JP4320019B2 (ja) | 2006-01-11 | 2006-01-11 | スパッタリング装置 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| TW200736406A TW200736406A (en) | 2007-10-01 |
| TWI390065B true TWI390065B (zh) | 2013-03-21 |
Family
ID=38256311
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW096101144A TWI390065B (zh) | 2006-01-11 | 2007-01-11 | Sputtering device |
Country Status (5)
| Country | Link |
|---|---|
| JP (1) | JP4320019B2 (enrdf_load_stackoverflow) |
| KR (1) | KR101018652B1 (enrdf_load_stackoverflow) |
| CN (1) | CN101370958B (enrdf_load_stackoverflow) |
| TW (1) | TWI390065B (enrdf_load_stackoverflow) |
| WO (1) | WO2007080906A1 (enrdf_load_stackoverflow) |
Families Citing this family (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP5429771B2 (ja) | 2008-05-26 | 2014-02-26 | 株式会社アルバック | スパッタリング方法 |
| JP5186281B2 (ja) * | 2008-05-26 | 2013-04-17 | 株式会社アルバック | バイポーラパルス電源及びこのバイポーラパルス電源を複数台並列接続してなる電源装置 |
| JP5124345B2 (ja) * | 2008-05-26 | 2013-01-23 | 株式会社アルバック | バイポーラパルス電源及びこのバイポーラパルス電源を複数台並列接続してなる電源装置 |
| JP5429772B2 (ja) * | 2008-06-30 | 2014-02-26 | 株式会社アルバック | 電源装置 |
| JP5500794B2 (ja) * | 2008-06-30 | 2014-05-21 | 株式会社アルバック | 電源装置 |
| KR101583667B1 (ko) * | 2009-03-06 | 2016-01-08 | 위순임 | 다중 소스 타겟 어셈블리를 갖는 물리적 기상 증착 플라즈마 반응기 |
| CN104878361B (zh) * | 2015-06-24 | 2017-05-31 | 安徽纯源镀膜科技有限公司 | 磁控溅射镀膜设备 |
| CN115896721B (zh) * | 2022-11-11 | 2025-07-25 | 华中科技大学 | 一种用于调控高熵合金元素比例的磁控溅射方法及系统 |
Family Cites Families (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6210285A (ja) * | 1985-07-05 | 1987-01-19 | Hitachi Ltd | プラズマ処理装置 |
| JPH0668839A (ja) * | 1992-08-13 | 1994-03-11 | Tokyo Electron Ltd | プラズマ装置における高周波給電装置 |
| JP3100279B2 (ja) * | 1994-01-24 | 2000-10-16 | 三菱重工業株式会社 | 真空装置への高周波電力供給方法 |
| JP4780972B2 (ja) * | 2004-03-11 | 2011-09-28 | 株式会社アルバック | スパッタリング装置 |
-
2006
- 2006-01-11 JP JP2006003445A patent/JP4320019B2/ja active Active
-
2007
- 2007-01-11 KR KR1020087016806A patent/KR101018652B1/ko active Active
- 2007-01-11 CN CN2007800022085A patent/CN101370958B/zh active Active
- 2007-01-11 WO PCT/JP2007/050201 patent/WO2007080906A1/ja active Application Filing
- 2007-01-11 TW TW096101144A patent/TWI390065B/zh active
Also Published As
| Publication number | Publication date |
|---|---|
| TW200736406A (en) | 2007-10-01 |
| CN101370958B (zh) | 2010-09-15 |
| KR20080078054A (ko) | 2008-08-26 |
| JP4320019B2 (ja) | 2009-08-26 |
| CN101370958A (zh) | 2009-02-18 |
| JP2007186726A (ja) | 2007-07-26 |
| KR101018652B1 (ko) | 2011-03-04 |
| WO2007080906A1 (ja) | 2007-07-19 |
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