KR101018652B1 - 스퍼터링 장치 - Google Patents

스퍼터링 장치 Download PDF

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Publication number
KR101018652B1
KR101018652B1 KR1020087016806A KR20087016806A KR101018652B1 KR 101018652 B1 KR101018652 B1 KR 101018652B1 KR 1020087016806 A KR1020087016806 A KR 1020087016806A KR 20087016806 A KR20087016806 A KR 20087016806A KR 101018652 B1 KR101018652 B1 KR 101018652B1
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South Korea
Prior art keywords
targets
target
pair
power supply
electric power
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KR1020087016806A
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English (en)
Korean (ko)
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KR20080078054A (ko
Inventor
모토시 코바야시
준야 키요타
요시쿠니 호리시따
히데노리 요다
시게미쯔 사토우
토시오 나카지마
Original Assignee
가부시키가이샤 알박
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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/35—Sputtering by application of a magnetic field, e.g. magnetron sputtering
    • C23C14/352—Sputtering by application of a magnetic field, e.g. magnetron sputtering using more than one target
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/3464—Sputtering using more than one target
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3402—Gas-filled discharge tubes operating with cathodic sputtering using supplementary magnetic fields
    • H01J37/3405—Magnetron sputtering
    • H01J37/3408—Planar magnetron sputtering
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3411—Constructional aspects of the reactor
    • H01J37/3444—Associated circuits

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Analytical Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physical Vapour Deposition (AREA)
  • Plasma Technology (AREA)
KR1020087016806A 2006-01-11 2007-01-11 스퍼터링 장치 Active KR101018652B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2006003445A JP4320019B2 (ja) 2006-01-11 2006-01-11 スパッタリング装置
JPJP-P-2006-00003445 2006-01-11

Publications (2)

Publication Number Publication Date
KR20080078054A KR20080078054A (ko) 2008-08-26
KR101018652B1 true KR101018652B1 (ko) 2011-03-04

Family

ID=38256311

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020087016806A Active KR101018652B1 (ko) 2006-01-11 2007-01-11 스퍼터링 장치

Country Status (5)

Country Link
JP (1) JP4320019B2 (enrdf_load_stackoverflow)
KR (1) KR101018652B1 (enrdf_load_stackoverflow)
CN (1) CN101370958B (enrdf_load_stackoverflow)
TW (1) TWI390065B (enrdf_load_stackoverflow)
WO (1) WO2007080906A1 (enrdf_load_stackoverflow)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5429771B2 (ja) 2008-05-26 2014-02-26 株式会社アルバック スパッタリング方法
JP5186281B2 (ja) * 2008-05-26 2013-04-17 株式会社アルバック バイポーラパルス電源及びこのバイポーラパルス電源を複数台並列接続してなる電源装置
JP5124345B2 (ja) * 2008-05-26 2013-01-23 株式会社アルバック バイポーラパルス電源及びこのバイポーラパルス電源を複数台並列接続してなる電源装置
JP5500794B2 (ja) * 2008-06-30 2014-05-21 株式会社アルバック 電源装置
JP5429772B2 (ja) * 2008-06-30 2014-02-26 株式会社アルバック 電源装置
KR101583667B1 (ko) * 2009-03-06 2016-01-08 위순임 다중 소스 타겟 어셈블리를 갖는 물리적 기상 증착 플라즈마 반응기
CN104878361B (zh) * 2015-06-24 2017-05-31 安徽纯源镀膜科技有限公司 磁控溅射镀膜设备
CN115896721B (zh) * 2022-11-11 2025-07-25 华中科技大学 一种用于调控高熵合金元素比例的磁控溅射方法及系统

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0668839A (ja) * 1992-08-13 1994-03-11 Tokyo Electron Ltd プラズマ装置における高周波給電装置
JP2005290550A (ja) * 2004-03-11 2005-10-20 Ulvac Japan Ltd スパッタリング装置

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6210285A (ja) * 1985-07-05 1987-01-19 Hitachi Ltd プラズマ処理装置
JP3100279B2 (ja) * 1994-01-24 2000-10-16 三菱重工業株式会社 真空装置への高周波電力供給方法

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0668839A (ja) * 1992-08-13 1994-03-11 Tokyo Electron Ltd プラズマ装置における高周波給電装置
JP2005290550A (ja) * 2004-03-11 2005-10-20 Ulvac Japan Ltd スパッタリング装置

Also Published As

Publication number Publication date
JP4320019B2 (ja) 2009-08-26
KR20080078054A (ko) 2008-08-26
TW200736406A (en) 2007-10-01
JP2007186726A (ja) 2007-07-26
CN101370958B (zh) 2010-09-15
TWI390065B (zh) 2013-03-21
WO2007080906A1 (ja) 2007-07-19
CN101370958A (zh) 2009-02-18

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