TWI389268B - 半導體組件用之載體、半導體組件及載體之製造方法 - Google Patents

半導體組件用之載體、半導體組件及載體之製造方法 Download PDF

Info

Publication number
TWI389268B
TWI389268B TW098135923A TW98135923A TWI389268B TW I389268 B TWI389268 B TW I389268B TW 098135923 A TW098135923 A TW 098135923A TW 98135923 A TW98135923 A TW 98135923A TW I389268 B TWI389268 B TW I389268B
Authority
TW
Taiwan
Prior art keywords
layer
conductor layer
carrier
conductor
connection
Prior art date
Application number
TW098135923A
Other languages
English (en)
Chinese (zh)
Other versions
TW201027677A (en
Inventor
麥可 席斯朋格
史帝芬妮 穆茲爾
Original Assignee
歐斯朗奧托半導體股份有限公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 歐斯朗奧托半導體股份有限公司 filed Critical 歐斯朗奧托半導體股份有限公司
Publication of TW201027677A publication Critical patent/TW201027677A/zh
Application granted granted Critical
Publication of TWI389268B publication Critical patent/TWI389268B/zh

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
    • H01L23/495—Lead-frames or other flat leads
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
    • H01L23/495—Lead-frames or other flat leads
    • H01L23/49537—Plurality of lead frames mounted in one device
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H01L23/31—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
    • H01L23/3107—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
    • H01L23/495—Lead-frames or other flat leads
    • H01L23/49541—Geometry of the lead-frame
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
    • H01L23/495—Lead-frames or other flat leads
    • H01L23/49541—Geometry of the lead-frame
    • H01L23/49548—Cross section geometry
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
    • H01L23/495—Lead-frames or other flat leads
    • H01L23/49575—Assemblies of semiconductor devices on lead frames
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/50—Encapsulations or containers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/484—Connecting portions
    • H01L2224/4847—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a wedge bond
    • H01L2224/48472—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a wedge bond the other connecting portion not on the bonding area also being a wedge bond, i.e. wedge-to-wedge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/42—Wire connectors; Manufacturing methods related thereto
    • H01L24/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L24/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/00014—Technical content checked by a classifier the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01046—Palladium [Pd]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01068—Erbium [Er]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01079—Gold [Au]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/12—Passive devices, e.g. 2 terminal devices
    • H01L2924/1203—Rectifying Diode
    • H01L2924/12036—PN diode
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/12—Passive devices, e.g. 2 terminal devices
    • H01L2924/1204—Optical Diode
    • H01L2924/12041—LED
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/181—Encapsulation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/181—Encapsulation
    • H01L2924/1815—Shape
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/036—Manufacture or treatment of packages
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/036—Manufacture or treatment of packages
    • H10H20/0364—Manufacture or treatment of packages of interconnections
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/8506—Containers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/852—Encapsulations
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/857—Interconnections, e.g. lead-frames, bond wires or solder balls
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T29/00—Metal working
    • Y10T29/49—Method of mechanical manufacture
    • Y10T29/49002—Electrical device making

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Geometry (AREA)
  • Led Device Packages (AREA)
  • Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
TW098135923A 2008-10-28 2009-10-23 半導體組件用之載體、半導體組件及載體之製造方法 TWI389268B (zh)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE102008053489A DE102008053489A1 (de) 2008-10-28 2008-10-28 Trägerkörper für ein Halbleiterbauelement, Halbleiterbauelement und Verfahren zur Herstellung eines Trägerkörpers

Publications (2)

Publication Number Publication Date
TW201027677A TW201027677A (en) 2010-07-16
TWI389268B true TWI389268B (zh) 2013-03-11

Family

ID=41668292

Family Applications (1)

Application Number Title Priority Date Filing Date
TW098135923A TWI389268B (zh) 2008-10-28 2009-10-23 半導體組件用之載體、半導體組件及載體之製造方法

Country Status (8)

Country Link
US (1) US8629549B2 (enExample)
EP (1) EP2345074B1 (enExample)
JP (1) JP5340398B2 (enExample)
KR (1) KR101659103B1 (enExample)
CN (1) CN102203940B (enExample)
DE (1) DE102008053489A1 (enExample)
TW (1) TWI389268B (enExample)
WO (1) WO2010048926A1 (enExample)

Families Citing this family (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102010023815A1 (de) * 2010-06-15 2011-12-15 Osram Opto Semiconductors Gmbh Oberflächenmontierbares optoelektronisches Bauelement und Verfahren zur Herstellung eines oberflächenmontierbaren optoelektronischen Bauelements
DE102010027313A1 (de) 2010-07-16 2012-01-19 Osram Opto Semiconductors Gmbh Trägervorrichtung für einen Halbleiterchip, elektronisches Bauelement mit einer Trägervorrichtung und optoelektronisches Bauelement mit einer Trägervorrichtung
KR101114197B1 (ko) * 2010-08-09 2012-02-22 엘지이노텍 주식회사 발광 소자 및 이를 구비한 조명 시스템
KR20120022410A (ko) * 2010-09-02 2012-03-12 삼성엘이디 주식회사 발광소자 패키지 및 그 제조 방법
TWI452691B (zh) * 2011-04-25 2014-09-11 Univ Nat Cheng Kung 半導體結構及其製作方法和磊晶半成品的製作方法
KR101905535B1 (ko) * 2011-11-16 2018-10-10 엘지이노텍 주식회사 발광 소자 패키지 및 이를 구비한 조명 장치
CN103972357B (zh) * 2013-02-06 2016-12-28 光宝电子(广州)有限公司 发光二极管封装件及其导线架
DE102013206186A1 (de) 2013-04-09 2014-10-09 Osram Opto Semiconductors Gmbh Optoelektronisches Bauelement
EP3022779B1 (en) * 2013-07-19 2020-03-18 Lumileds Holding B.V. Pc led with optical element and without substrate carrier
DE102015112757A1 (de) * 2015-08-04 2017-02-09 Osram Opto Semiconductors Gmbh Verfahren zum Herstellen eines optoelektronischen Bauelements und optoelektronisches Bauelement
US10312184B2 (en) 2015-11-04 2019-06-04 Texas Instruments Incorporated Semiconductor systems having premolded dual leadframes
DE102016101526A1 (de) * 2016-01-28 2017-08-03 Osram Opto Semiconductors Gmbh Herstellung eines Multichip-Bauelements
DE102017117150A1 (de) * 2017-07-28 2019-01-31 Osram Opto Semiconductors Gmbh Verfahren zur Herstellung von optoelektronischen Halbleiterbauteilen und optoelektronisches Halbleiterbauteil
US10438877B1 (en) * 2018-03-13 2019-10-08 Semiconductor Components Industries, Llc Multi-chip packages with stabilized die pads
DE102019119371A1 (de) * 2019-07-17 2021-01-21 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Bauteil und verfahren zur herstellung eines bauteils
DE102020215148A1 (de) 2020-12-01 2022-06-02 Vitesco Technologies Germany Gmbh Leistungshalbleitermodul und Antriebsstrang für ein Fahrzeug aufweisend ein derartiges Leistungshalbleitermodul
DE102020133755A1 (de) * 2020-12-16 2022-06-23 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Bauelement mit strukturiertem leiterrahmen und verfahren zur herstellung eines bauelements
DE102021130128A1 (de) 2021-11-18 2023-05-25 Endress+Hauser SE+Co. KG Baugruppe für eine Verbindung mindestens eines Bauteils mit einer Leiterplatte
TWI871777B (zh) * 2023-09-19 2025-02-01 隆達電子股份有限公司 封裝結構

Family Cites Families (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2206444A (en) * 1987-06-10 1989-01-05 Yue Wen Cheng Light emitting diode
US6184575B1 (en) * 1994-08-26 2001-02-06 National Semiconductor Corporation Ultra-thin composite package for integrated circuits
US6061251A (en) 1997-09-08 2000-05-09 Hewlett-Packard Company Lead-frame based vertical interconnect package
DE19963264B4 (de) * 1999-12-17 2007-05-31 Optotransmitter-Umweltschutz-Technologie E.V. Trägermaterial für elektronische Hochleistungs-Bauelemente in SMD-Bauform und ein damit hergestelltes elektronisches Hochleistungs-Bauelement
AU2001272814A1 (en) * 2000-07-25 2002-02-05 Chan-Ik Park Plastic package base, air cavity type package and their manufacturing methods
DE10228634A1 (de) 2002-06-26 2004-01-22 Osram Opto Semiconductors Gmbh Oberflächenmontierbare Miniatur-Lumineszenz-und/oder Photo-Diode und Verfahren zu deren Herstellung
JP4653484B2 (ja) * 2002-08-05 2011-03-16 オスラム オプト セミコンダクターズ ゲゼルシャフト ミット ベシュレンクテル ハフツング 電気的な基板フレームの製造のための方法、表面実装可能な半導体素子の製造のための方法及び半導体素子の製造のための方法
CN100490140C (zh) 2003-07-15 2009-05-20 飞思卡尔半导体公司 双规引线框
US7473989B2 (en) * 2003-08-27 2009-01-06 Advanced Semiconductor Engineering, Inc. Flip-chip package
US7554179B2 (en) 2005-02-08 2009-06-30 Stats Chippac Ltd. Multi-leadframe semiconductor package and method of manufacture
JP2006310425A (ja) 2005-04-27 2006-11-09 Renesas Technology Corp 電子装置およびその製造方法
US7298026B2 (en) * 2005-05-09 2007-11-20 Stats Chippac Ltd. Large die package and method for the fabrication thereof
US7595453B2 (en) 2005-05-24 2009-09-29 M/A-Com Technology Solutions Holdings, Inc. Surface mount package
TWM279026U (en) * 2005-07-01 2005-10-21 Wan-Shuen Jou Base for surface-mount-type LED
US7410830B1 (en) * 2005-09-26 2008-08-12 Asat Ltd Leadless plastic chip carrier and method of fabricating same
US20070126020A1 (en) * 2005-12-03 2007-06-07 Cheng Lin High-power LED chip packaging structure and fabrication method thereof
JP4533875B2 (ja) 2006-09-12 2010-09-01 株式会社三井ハイテック 半導体装置およびこの半導体装置に使用するリードフレーム製品並びにこの半導体装置の製造方法

Also Published As

Publication number Publication date
WO2010048926A1 (de) 2010-05-06
EP2345074A1 (de) 2011-07-20
KR101659103B1 (ko) 2016-09-22
JP5340398B2 (ja) 2013-11-13
CN102203940A (zh) 2011-09-28
KR20110081306A (ko) 2011-07-13
JP2012507157A (ja) 2012-03-22
EP2345074B1 (de) 2016-08-24
DE102008053489A1 (de) 2010-04-29
US8629549B2 (en) 2014-01-14
CN102203940B (zh) 2013-12-25
US20120098110A1 (en) 2012-04-26
TW201027677A (en) 2010-07-16

Similar Documents

Publication Publication Date Title
TWI389268B (zh) 半導體組件用之載體、半導體組件及載體之製造方法
US9899573B2 (en) Slim LED package
TWI223461B (en) Optoelectronic component and component-module
CN100565944C (zh) 照明模块及其制造方法
KR101714039B1 (ko) 발광 소자, 발광 소자 제조방법, 발광 소자 패키지 및 조명 시스템
US8344406B2 (en) Light emitting diode package and manufacturing method thereof
CN105103314B (zh) 半导体器件和用于制造半导体器件的方法
CN105210202B (zh) 发光半导体器件和用于制造发光半导体器件的方法
TW200806008A (en) Light emitting device
TW200950155A (en) Light emitting diode package structure and manufacturing process thereof
TW201019507A (en) Light-emitting diode device and method for fabricating the same
KR20120024452A (ko) 발광 장치의 제조 방법
TW201143140A (en) Semiconductor light emitting device and method for manufacturing same
CN102414849A (zh) 发光二极管以及用于制造发光二极管的方法
US20110181182A1 (en) Top view light emitting device package and fabrication method thereof
KR102059402B1 (ko) 전자소자 패키지 및 이에 사용되는 패키지 기판
CN102856468B (zh) 发光二极管封装结构及其制造方法
KR100665361B1 (ko) 질화물 발광다이오드 패키지
TWI404186B (zh) 半導體組件用之電連接導體、半導體組件以及電連接導體之製造方法
KR101778141B1 (ko) 반도체 발광소자 및 이의 제조방법
TWI491076B (zh) 用於光電組件之殼體及其製造方法
KR101863549B1 (ko) 반도체 발광소자
KR101855189B1 (ko) 반도체 발광소자
KR101819909B1 (ko) 반도체 발광소자
KR20170109167A (ko) 반도체 발광소자

Legal Events

Date Code Title Description
MM4A Annulment or lapse of patent due to non-payment of fees