TWI384564B - And a method for producing a self-forming structure of a viscose formed in a wafer - Google Patents

And a method for producing a self-forming structure of a viscose formed in a wafer Download PDF

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TWI384564B
TWI384564B TW97122540A TW97122540A TWI384564B TW I384564 B TWI384564 B TW I384564B TW 97122540 A TW97122540 A TW 97122540A TW 97122540 A TW97122540 A TW 97122540A TW I384564 B TWI384564 B TW I384564B
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material layer
self
regions
wafer
forming
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TW201001568A (en
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Univ Nat Chunghsing
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Description

形成於晶圓的黏膠自體成型結構的製造方法Method for manufacturing adhesive self-forming structure formed on wafer

本發明是有關於一種用於黏膠佈覆的製造方法,特別是指一種應用半導體製程的形成於晶圓的黏膠自體成型結構的製造方法。The present invention relates to a method for manufacturing a viscous cloth, and more particularly to a method for manufacturing a self-forming structure of a viscous film formed on a wafer using a semiconductor process.

簡述由一晶圓(wafer)到複數電子元件的製作方法,包含:首先製備一基板,並在該基板頂面對應形成複數電路單元。A method for fabricating a wafer to a plurality of electronic components includes first preparing a substrate and forming a plurality of circuit units on a top surface of the substrate.

再進行一切割步驟,對應形成在該基板上的電路單元將該晶圓切割成複數晶片(chip)。A further cutting step is performed to cut the wafer into a plurality of chips corresponding to the circuit unit formed on the substrate.

接著進行一固晶步驟,將黏膠點於一導線架(Lead-Frame)的晶片墊(die pad)上,再將單一晶片定置於黏膠上,藉著黏膠將該晶片固著於該晶片墊上。Then, a solid crystal step is performed, the adhesive is spotted on a lead pad of a lead frame, and then a single wafer is placed on the adhesive, and the wafer is fixed by the adhesive. On the wafer pad.

由以上說明可知,自未切割晶圓到固晶的流程會因為逐一點佈黏膠於單一晶片墊與單一晶片間,而耗費大量工時。As can be seen from the above description, the process from the uncut wafer to the die bonding requires a lot of man-hours because the glue is applied between the single wafer pad and the single wafer.

此種缺失除了顯現於較早的導線架封裝方式之外,亦在球格陣列構裝(BGA)、晶片尺寸封裝的植球製程中出現類似問題。In addition to appearing in earlier leadframe packaging, such a deficiency also presents similar problems in ball grid array (BGA), wafer size package ball placement processes.

上述球格陣列構裝、晶片尺寸封裝是因應晶片的功能日益增強,進而使得晶片對外的接點數量需要隨之增加,以滿足逐漸增大的傳輸訊號流量。The above-described grid array assembly and wafer size packaging are in response to the increasing function of the wafer, so that the number of external contacts of the wafer needs to be increased to meet the increasing transmission signal flow rate.

而對應大量的接點數量,所需的是逐一在晶片的接點上佈植供後續電連接用的植球(Ball Array),使得對於在晶片的接點上逐一佈植錫球的製程而言,更突顯了耗費工時的缺點。Corresponding to the large number of contacts, it is required to plant a ball Array for subsequent electrical connection on the contacts of the wafer one by one, so that the process of implanting the solder balls one by one on the contacts of the wafer is In other words, it highlights the shortcomings of working hours.

無論在何種構裝製程中,如何提供一種能縮減固晶製程的點膠、置晶等步驟的製造方法,並能縮減在晶片的接點上點佈錫球的工時,都是業界與學界不斷研究的重點。Regardless of the manufacturing process, how to provide a manufacturing method that can reduce the steps of dispensing, crystallizing, etc. of the die bonding process, and reduce the man-hours of placing solder balls on the contacts of the wafers, The focus of academic research.

因此,本發明之目的,即在提供一種可以提高佈覆黏膠效率的形成於晶圓的黏膠自體成型結構的製造方法。Accordingly, it is an object of the present invention to provide a method of manufacturing a self-forming structure of a viscose formed on a wafer that can improve the efficiency of coating.

於是,本發明形成於晶圓的黏膠自體成型結構的一種製造方法,首先,於一基板的頂面形成複數規則排列的電路單元,且於該基板的底面定義出複數與該等電路單元相對應的第一區,及複數分別環繞該等第一區的第二區。Therefore, in the manufacturing method of the self-molded structure of the adhesive formed on the wafer of the present invention, first, a plurality of regularly arranged circuit units are formed on a top surface of a substrate, and a plurality of circuit units are defined on a bottom surface of the substrate. The corresponding first zone, and the plurality of second zones respectively surrounding the first zone.

再於該基板底面形成一親水材料層,該親水材料層的構成材料使一液態黏膠佈覆時會傾向覆蓋散佈於整個表面。Further, a hydrophilic material layer is formed on the bottom surface of the substrate, and the constituent material of the hydrophilic material layer tends to cover the entire surface when a liquid adhesive cloth is coated.

然後,移除該等第二區上的親水材料層使基板底面裸露,保留該等第一區上的親水材料層。Then, the hydrophilic material layer on the second regions is removed to expose the bottom surface of the substrate, and the hydrophilic material layer on the first regions is retained.

接著,在該等裸露的第二區基板底面及該等第一區形成一疏水材料層,該疏水材料層實質上厚度與該 親水材料層相同,且構成材料使液態黏膠佈覆時會傾向聚縮成珠狀。And forming a hydrophobic material layer on the bottom surface of the bare second region substrate and the first regions, the hydrophobic material layer has a substantial thickness and the The hydrophilic material layer is the same, and the constituent material tends to be polycondensed into beads when the liquid adhesive cloth is covered.

最後,移除該等第一區上的疏水材料層,保留該等第二區上的疏水材料層,完成該黏膠自體成型結構。Finally, the layer of hydrophobic material on the first regions is removed, and the layer of hydrophobic material on the second regions is retained to complete the self-forming structure of the adhesive.

其中,該黏膠自體成型結構供液態黏膠自我校正位置至該等第一區,並自體成型一實質上呈半球狀的黏膠珠。Wherein, the viscose auto-molded structure is provided for self-correction of the liquid glue to the first regions, and self-forming a substantially hemispherical viscose bead.

此外,形成於晶圓的黏膠自體成型結構的另一種製造方法包含以下步驟。Further, another method of manufacturing the viscose auto-formed structure formed on the wafer includes the following steps.

先在該基板頂面形成該等電路單元。The circuit units are first formed on the top surface of the substrate.

再於該基板底面形成一材料層。A material layer is further formed on the bottom surface of the substrate.

接著,於該材料層定義出與該等電路單元相對應的該等第一區,及該等分別圍繞該等第一區的第二區。Then, the first regions corresponding to the circuit cells are defined in the material layer, and the second regions surrounding the first regions respectively.

最後,於每一第二區之材料層定義出複數平均高度為32um的疏水柱,且該等疏水柱彼此間距範圍為30um~80um;液態黏膠因該等疏水柱而傾向在該等第二區上聚縮為珠狀,在該等第一區則傾向覆蓋散佈於表面。Finally, a hydrophobic column having a complex average height of 32 um is defined in each of the material layers of the second region, and the hydrophobic columns are spaced apart from each other by 30 um to 80 um; the liquid viscose tends to be in the second due to the hydrophobic columns The regions are condensed into beads, and in the first regions tend to cover the surface.

本發明之功效在於:製作該黏膠自體成型結構後,利用黏膠自身內聚力與該等第一、二區的表面性質交互作用,使黏膠接觸該自體成型結構後,得以定位於對應該等電路單元的第一區,並呈半球狀黏膠珠, 使黏膠能一次完成佈覆而有效提高佈覆黏膠效率。The effect of the invention is that after the self-forming structure of the adhesive is made, the cohesive force of the adhesive itself interacts with the surface properties of the first and second regions, so that the adhesive contacts the self-forming structure and is positioned in the pair. Should wait for the first zone of the circuit unit and be a hemispherical adhesive bead. The adhesive can be coated at one time to effectively improve the adhesive efficiency of the coating.

有關本發明之前述及其他技術內容、特點與功效,在以下配合參考圖式之三個較佳實施例的詳細說明中,將可清楚的呈現。The above and other technical contents, features and advantages of the present invention will be apparent from the following detailed description of FIG.

參閱圖1,本發明形成於晶圓的黏膠自體成型結構3的製造方法的第一較佳實施例,包含以下步驟。Referring to Figure 1, a first preferred embodiment of a method of fabricating a self-forming structure 3 of a paste formed on a wafer of the present invention comprises the following steps.

首先,實施一步驟81,先於一基板1的頂面利用半導體製程,形成複數規則排列的電路單元2。First, a step 81 is performed to form a plurality of regularly arranged circuit units 2 by using a semiconductor process on the top surface of a substrate 1.

再於該基板1的底面定義出複數與該等電路單元2相對應的第一區31,及複數分別環繞該等第一區31的第二區32。Further, a plurality of first regions 31 corresponding to the circuit units 2 and a plurality of second regions 32 respectively surrounding the first regions 31 are defined on the bottom surface of the substrate 1.

再實施一步驟82,於該基板1底面形成一親水材料層4。A further step 82 is performed to form a hydrophilic material layer 4 on the bottom surface of the substrate 1.

其中,該親水材料層4是選自矽、砷化鎵(GaAs)、藍寶石、金、鈦、銅等親水性材料,及此等之一組合製成導電薄膜,使一液態黏膠6佈覆於該親水材料層4時,與該親水材料層4接觸角較小,並傾向覆蓋沾附於整個表面,即此時該親水材料層4與黏膠6的界面張力大於黏膠6本身的內聚力。Wherein, the hydrophilic material layer 4 is a hydrophilic material selected from the group consisting of ruthenium, gallium arsenide (GaAs), sapphire, gold, titanium, copper, etc., and one of these is combined to form a conductive film, and a liquid adhesive 6 is covered. In the hydrophilic material layer 4, the contact angle with the hydrophilic material layer 4 is small, and tends to cover the entire surface, that is, the interfacial tension between the hydrophilic material layer 4 and the adhesive 6 is greater than the cohesive force of the adhesive 6 itself. .

接著實施一步驟83,移除該等第二區32上的親水材料層4,使基板1底面裸露。Next, a step 83 is performed to remove the hydrophilic material layer 4 on the second regions 32 to expose the bottom surface of the substrate 1.

並且在該步驟83中,該等第一區31上的親水材料層4被保留。And in this step 83, the hydrophilic material layer 4 on the first regions 31 is retained.

然後實施一步驟84,於該等裸露的第二區32基板1底面,以及該等第一區31皆形成一疏水材料層5。Then, a step 84 is performed to form a hydrophobic material layer 5 on the bottom surface of the bare second region 32 substrate 1 and the first regions 31.

該疏水材料層5的厚度實質上與該親水材料層4相同。The thickness of the hydrophobic material layer 5 is substantially the same as that of the hydrophilic material layer 4.

該疏水材料層5是選自感光性高分子材料,及此等製成之微柱狀結構,使液態黏膠6佈覆於該疏水材料層5時會傾向聚縮成珠狀,即黏膠6自身內聚力大於與該疏水材料層5間的界面張力,使得黏膠6容易滾動並且不易附著於該疏水材料層5上。The hydrophobic material layer 5 is selected from the group consisting of photosensitive polymer materials, and the micro-columnar structure formed therein, so that when the liquid adhesive 6 is coated on the hydrophobic material layer 5, it tends to be polycondensed into beads, that is, the adhesive. The self-cohesion of 6 is greater than the interfacial tension with the layer 5 of hydrophobic material, so that the adhesive 6 is easily rolled and is not easily attached to the layer 5 of hydrophobic material.

最後,實施一步驟85,移除該等第一區31上的疏水材料層5,並且保留該等第二區32上的疏水材料層5。Finally, a step 85 is performed to remove the layer of hydrophobic material 5 on the first regions 31 and to retain the layer of hydrophobic material 5 on the second regions 32.

由於該疏水材料層5與該親水材料層4的厚度相當,使得該黏膠自體成型結構3的成品是概呈一平坦面,且該疏水材料層5與該親水材料層4對應該等電路單元2規則分佈於該基板1底面。Since the hydrophobic material layer 5 is equivalent to the thickness of the hydrophilic material layer 4, the finished product of the adhesive auto-molded structure 3 is a flat surface, and the hydrophobic material layer 5 and the hydrophilic material layer 4 correspond to a circuit. The unit 2 is regularly distributed on the bottom surface of the substrate 1.

藉由上述步驟所完成的形成於晶圓的黏膠自體成型結構3,供液態黏膠6接觸該黏膠自體成型結構3時自動定位。The self-forming structure 3 of the adhesive formed on the wafer, which is completed by the above steps, is automatically positioned when the liquid adhesive 6 contacts the adhesive self-forming structure 3.

若黏膠6接觸該等第二區32時,由於該等第二區32上形成有該疏水材料層5,使得黏膠6能夠自動地自我校正位置,而定位於形成有該親水材料層4的該等第一區31上,並自體成型一實質上呈半球狀的黏膠珠6。If the adhesive 6 contacts the second regions 32, since the hydrophobic material layer 5 is formed on the second regions 32, the adhesive 6 can automatically correct the position and is positioned to form the hydrophilic material layer 4. On the first zone 31, a substantially hemispherical viscose bead 6 is formed by itself.

參閱圖2,值得一提的是,還可實施一步驟86,粗化該疏水材料層5至平均粗糙度為32um,以提高該疏水材料層5的疏水特性,使黏膠6的定位更精確。Referring to FIG. 2, it is worth mentioning that a step 86 can be performed to roughen the hydrophobic material layer 5 to an average roughness of 32 um to improve the hydrophobic property of the hydrophobic material layer 5, so that the positioning of the adhesive 6 is more precise. .

參閱圖3,本發明的第二較佳實施例與該第一較佳實施例的製造方式大致相同,不同之處在於與該第一較佳實施例中的該親水材料層4與該疏水材料層5形成順序相反。Referring to FIG. 3, the second preferred embodiment of the present invention is substantially the same as the manufacturing method of the first preferred embodiment, except that the hydrophilic material layer 4 and the hydrophobic material in the first preferred embodiment are different. Layer 5 is formed in the reverse order.

在第二較佳實施例中,是先在一步驟82'中形成該疏水材料層5。In a second preferred embodiment, the layer of hydrophobic material 5 is first formed in a step 82'.

而在一步驟83'中再移除該等第一區31上的疏水材料層5。The hydrophobic material layer 5 on the first regions 31 is removed again in a step 83'.

然後實施一步驟84',於該等裸露的第一區31及該等第二區32上形成該親水材料層4。A step 84' is then performed to form the hydrophilic material layer 4 on the bare first regions 31 and the second regions 32.

最後,實施一步驟85',移除該等第二區32上的親水材料層4,即完成該黏膠自體成型結構3,且本第二較佳實施例的成品與該第一較佳實施例並無不同。Finally, a step 85' is performed to remove the hydrophilic material layer 4 on the second regions 32, that is, to complete the adhesive self-forming structure 3, and the finished product of the second preferred embodiment and the first preferred The examples are no different.

參閱圖4,本發明的第三較佳實施例包含以下步驟。Referring to Figure 4, a third preferred embodiment of the present invention comprises the following steps.

同樣地先實施一步驟91,於該基板1的頂面形成該等規則排列的電路單元2。Similarly, a step 91 is first performed to form the regularly arranged circuit units 2 on the top surface of the substrate 1.

接著實施一步驟92,於該基板1的底面利用旋塗塗佈方式形成一材料層7。Next, a step 92 is performed to form a material layer 7 on the bottom surface of the substrate 1 by spin coating.

且該材料層7是選自感光性高分子材料,及此等之一組合製成微柱狀結構。And the material layer 7 is selected from a photosensitive polymer material, and one of these is combined to form a micro-columnar structure.

於該材料層7定義出與該等電路單元2相對應的該等第一區31,及該等分別圍繞該等第一區31的第二區32。The first layer 31 corresponding to the circuit units 2 and the second regions 32 respectively surrounding the first regions 31 are defined in the material layer 7.

然後,實施一步驟93,於每一第二區32之材料層7利用薄膜沉積製程形成複數疏水柱71,即完成該黏膠自體成形結構。Then, a step 93 is performed to form a plurality of hydrophobic columns 71 in the material layer 7 of each of the second regions 32 by a thin film deposition process, that is, the adhesive automorphic structure is completed.

其中,該等疏水柱71的平均高度為32um,而彼此間距為60um,單一疏水柱71的形狀可以是角錐柱、圓錐柱、蜂槽,及截頭錐柱。The average height of the hydrophobic columns 71 is 32 um, and the spacing between the two hydrophobic columns 71 is 60 um. The shape of the single hydrophobic column 71 may be a pyramidal column, a conical column, a bee groove, and a truncated cone.

因該等疏水柱71的結構特性,使得液態黏膠6不易停留在該等第二區32上。Due to the structural characteristics of the hydrophobic columns 71, the liquid glue 6 does not easily stay on the second regions 32.

相較之下,黏膠6較易覆蓋於該等第一區31上,所以藉該黏膠自體成型結構3供黏膠6定位於該等第一區31,並自體成型成黏膠珠6。In contrast, the adhesive 6 is more easily covered on the first regions 31, so the adhesive 6 is positioned in the first region 31 by the self-forming structure 3 of the adhesive, and is self-formed into a glue. Bead 6.

參閱圖5,值得一提的是,也可實施一步驟94,移除該等第一區31上的材料層7,裸露該等第一區31的基板1底面,同樣具有親水效果。Referring to FIG. 5, it is worth mentioning that a step 94 can also be performed to remove the material layer 7 on the first regions 31, and expose the bottom surface of the substrate 1 of the first regions 31, which also has a hydrophilic effect.

利用本發明形成於晶圓的黏膠自體成型結構3的製造方法,完成該黏膠自體成型結構3後,將本發明應用於固晶製程時,是先將該晶圓對應該等電路單元2切割為複數晶片,但仍保持該等晶片聚集成該晶圓態樣,再將液態黏膠6一次塗佈於該晶圓底面,節省逐一點佈黏膠6的工時,並利用該等晶片上的自體成型結構3,讓液態黏膠6定位在該等第一區31形成黏膠 珠6。By using the manufacturing method of the self-forming structure 3 of the adhesive formed on the wafer of the present invention, after the self-forming structure 3 of the adhesive is completed, when the invention is applied to the solid-crystal manufacturing process, the wafer is first matched with the circuit. The unit 2 is cut into a plurality of wafers, but the wafers are still gathered into the wafer, and the liquid glue 6 is applied to the bottom surface of the wafer at a time, thereby saving the working time of the adhesive 6 and using the same. The self-forming structure 3 on the wafer, the liquid glue 6 is positioned in the first region 31 to form a glue Bead 6.

藉此,之後的製程再利用自體成型於該等晶片上的黏膠珠6,將該等晶片初步黏著於晶片墊上,接著進行熱處理製程,使黏膠珠6溶融後,再行固結於晶片墊上,即快速地完成固晶製程。Thereby, the subsequent process reuses the adhesive beads 6 formed on the wafers, and the wafers are initially adhered to the wafer pads, and then the heat treatment process is performed to dissolve the viscose beads 6 and then consolidated. On the wafer pad, the solid crystal process is completed quickly.

由於黏膠6是一次佈覆於該晶圓上的全部晶片上,且利用該自體成型結構,讓黏膠6能在佈覆的同時自動校正位置位於該等第一區31上,取代一次行程中僅能針對單一晶片點膠的製程,大幅減少了點佈黏膠6的工時,且亦簡化了製程。Since the adhesive 6 is coated on all the wafers on the wafer at one time, and the self-forming structure is used, the adhesive 6 can be automatically positioned at the first region 31 while being covered, instead of once. The process of dispensing only a single wafer can greatly reduce the man-hours of the glue 6 and simplify the process.

另外,由於球格陣列構裝、晶方尺度構裝皆須佈植大量錫球於具有多數接腳的晶片。In addition, since the grid array structure and the crystal scale structure are required to implant a large number of solder balls on a wafer having a plurality of pins.

因此將本發明所製得的該黏膠自體成型結構3,應用於陣列構裝時,是將該自體成型結構3成長於該晶片的接腳位置,讓液態銲錫在塗佈時,能自動校正位置並定位於接腳上,能讓液態銲錫一次佈植定位完成。Therefore, when the adhesive self-molding structure 3 obtained by the invention is applied to the array assembly, the self-molding structure 3 is grown at the pin position of the wafer, so that the liquid solder can be coated. Automatically correcting the position and positioning it on the pins allows the liquid solder to be positioned once.

所以無須花費工時在每一接腳點佈錫球,同樣簡化植球製程與縮減工時。Therefore, it is not necessary to spend working hours at each pin point, which also simplifies the ball processing process and reduces the working hours.

除上述優點之外,藉由本發明所製得該黏膠自體成型結構3還具有黏膠6定量的優點。利用本發明的上述製程,能精準地定義出每一第一區31的面積大小,進而能固定每一第一區31所佈覆的黏膠6量,提高該晶圓的整體平整度。In addition to the above advantages, the viscose auto-formed structure 3 produced by the present invention has the advantage of being quantitative of the viscose 6. With the above process of the present invention, the area of each of the first regions 31 can be precisely defined, and the amount of the glue 6 covered by each of the first regions 31 can be fixed to improve the overall flatness of the wafer.

綜上所述,利用液態黏膠6對於該等第一區31與該等第二區32的浸潤能力不同,讓液態黏膠6在佈覆於該晶圓的自體成型結構時,傾向遠離該等第二區32並匯聚於該等第一區31,並於該等第一區31上自體成型成黏膠珠6,提高了佈覆黏膠6的效率,故確實能達成本發明之目的。In summary, the liquid viscose 6 has different wetting ability for the first region 31 and the second regions 32, so that the liquid adhesive 6 tends to be far away when it is coated on the self-forming structure of the wafer. The second regions 32 are converge on the first regions 31 and are self-formed into the beads 6 on the first regions 31, thereby improving the efficiency of the coating of the adhesive 6, so that the present invention can be achieved. The purpose.

惟以上所述者,僅為本發明之較佳實施例而已,當不能以此限定本發明實施之範圍,即大凡依本發明申請專利範圍及發明說明內容所作之簡單的等效變化與修飾,皆仍屬本發明專利涵蓋之範圍內。The above is only the preferred embodiment of the present invention, and the scope of the invention is not limited thereto, that is, the simple equivalent changes and modifications made by the scope of the invention and the description of the invention are All remain within the scope of the invention patent.

1‧‧‧基板1‧‧‧Substrate

2‧‧‧電路單元2‧‧‧ circuit unit

3‧‧‧黏膠自體成型結構3‧‧‧Viscose auto-formed structure

31‧‧‧第一區31‧‧‧First District

32‧‧‧第二區32‧‧‧Second District

4‧‧‧親水材料層4‧‧‧Hydrophilic material layer

5‧‧‧疏水材料層5‧‧‧Water-repellent material layer

6‧‧‧黏膠6‧‧‧Viscos

7‧‧‧材料層7‧‧‧Material layer

71‧‧‧疏水柱71‧‧‧Drained column

81‧‧‧步驟81‧‧‧Steps

82‧‧‧步驟82‧‧‧Steps

83‧‧‧步驟83‧‧‧Steps

84‧‧‧步驟84‧‧‧Steps

85‧‧‧步驟85‧‧‧Steps

86‧‧‧步驟86‧‧‧Steps

81'‧‧‧步驟81'‧‧‧Steps

82'‧‧‧步驟82'‧‧‧Steps

83'‧‧‧步驟83'‧‧‧ steps

84'‧‧‧步驟84'‧‧‧ steps

85'‧‧‧步驟85'‧‧‧Steps

91‧‧‧步驟91‧‧‧Steps

92‧‧‧步驟92‧‧‧Steps

93‧‧‧步驟93‧‧‧Steps

94‧‧‧步驟94‧‧‧Steps

圖1是一流程示意圖,說明本發明形成於晶圓的黏膠自體成型結構的製造方法的一第一較佳實施例;圖2是一示意圖,說明本第一較佳實施例的一粗化步驟;圖3是一類似於圖1的視圖,說明本發明形成於晶圓的黏膠自體成型結構的製造方法的一第二較佳實施例;圖4是一流程示意圖,說明本發明形成於晶圓的黏膠自體成型結構的製造方法的一第三較佳實施例;及圖5是一示意圖,說明本第三較佳實施例移除複數第一區的一材料層。1 is a schematic flow chart showing a first preferred embodiment of a method for manufacturing a self-forming structure of a viscose formed on a wafer according to the present invention; and FIG. 2 is a schematic view showing a thick portion of the first preferred embodiment. FIG. 3 is a view similar to FIG. 1 illustrating a second preferred embodiment of the method for fabricating a self-forming structure of a viscose formed on a wafer according to the present invention; FIG. 4 is a flow diagram illustrating the present invention. A third preferred embodiment of a method of fabricating a self-forming structure of a glue formed on a wafer; and FIG. 5 is a schematic view showing a material layer of the first preferred embodiment removed from the third preferred embodiment.

1‧‧‧基板1‧‧‧Substrate

2‧‧‧電路單元2‧‧‧ circuit unit

3‧‧‧黏膠自體成型結構3‧‧‧Viscose auto-formed structure

31‧‧‧第一區31‧‧‧First District

32‧‧‧第二區32‧‧‧Second District

6‧‧‧黏膠6‧‧‧Viscos

7‧‧‧材料層7‧‧‧Material layer

71‧‧‧疏水柱71‧‧‧Drained column

91‧‧‧步驟91‧‧‧Steps

92‧‧‧步驟92‧‧‧Steps

93‧‧‧步驟93‧‧‧Steps

Claims (14)

一種形成於晶圓的黏膠自體成型結構的製造方法,包含:(a)於一基板的頂面形成複數規則排列的電路單元,且於該基板的底面定義出複數與該等電路單元相對應的第一區,及複數分別環繞該等第一區的第二區;(b)於該基板底面形成一親水材料層,該親水材料層的構成材料使一液態黏膠佈覆時會傾向覆蓋散佈於整個表面;(c)移除該等第二區上的親水材料層使基板底面裸露,保留該等第一區上的親水材料層;(d)於該等裸露的第二區基板底面及該等第一區形成一疏水材料層,該疏水材料層實質上厚度與該親水材料層相同,且構成材料使液態黏膠佈覆時會傾向聚縮成珠狀;及(e)移除該等第一區上的疏水材料層,保留該等第二區上的疏水材料層,完成該黏膠自體成型結構,其中,該黏膠自體成型結構供液態黏膠自我校正位置至該等第一區,並自體成型一實質上呈半球狀的黏膠珠。A method for manufacturing a self-forming structure of a viscose formed on a wafer, comprising: (a) forming a plurality of regularly arranged circuit units on a top surface of a substrate, and defining a plurality of circuit elements on the bottom surface of the substrate Corresponding first region, and a plurality of second regions respectively surrounding the first regions; (b) forming a hydrophilic material layer on the bottom surface of the substrate, the constituent material of the hydrophilic material layer tends to cover a liquid adhesive tape Covering the entire surface; (c) removing the hydrophilic material layer on the second regions to expose the bottom surface of the substrate, retaining the hydrophilic material layer on the first regions; (d) the bare second region substrates The bottom surface and the first regions form a hydrophobic material layer having a thickness substantially the same as the hydrophilic material layer, and the constituent material tends to be polycondensed into beads when the liquid adhesive cloth is coated; and (e) In addition to the hydrophobic material layers on the first regions, the hydrophobic material layers on the second regions are retained to complete the self-forming structure of the adhesive, wherein the adhesive self-forming structure is provided for self-correction of the liquid adhesive to The first zone, and self-forming a substance Hemispherical bead of glue. 依據申請專利範圍第1項所述的形成於晶圓的黏膠自體成型結構的製造方法,其中,該親水材料層是選自矽、砷化鎵、藍寶石、金、鈦、銅等親水性水材,及此等之一組合製成薄膜。The method for producing a wafer-formed viscose auto-molded structure according to claim 1, wherein the hydrophilic material layer is selected from the group consisting of ruthenium, gallium arsenide, sapphire, gold, titanium, copper, and the like. Water, and a combination of these, is made into a film. 依據申請專利範圍第1項所述的形成於晶圓的黏膠自體 成型結構的製造方法,其中,該疏水材料層是選自具感光性之高分子製成之微柱狀結構。Wafer-formed self-body formed on wafer according to item 1 of the patent application scope A method for producing a molded structure, wherein the hydrophobic material layer is a micro-columnar structure selected from a photosensitive polymer. 依據申請專利範圍第1項所述的形成於晶圓的黏膠自體成型結構的製造方法,還包含一步驟(f),是粗化該疏水材料層至平均粗糙度為32um。The method for manufacturing a wafer-formed viscose auto-formed structure according to claim 1, further comprising a step (f) of roughening the hydrophobic material layer to an average roughness of 32 μm. 一種形成於晶圓的黏膠自體成型結構的製造方法,包含:(a)於一基板的頂面形成複數規則排列的電路單元,且於該基板的底面定義出複數與該等電路單元相對應的第一區,及複數分別環繞該等第一區的第二區;(b)於該基板的底面形成一疏水材料層,該疏水材料層的構成材料使液態黏膠佈覆時會傾向聚縮成珠狀;(c)移除該等第一區上的疏水材料層使基板底面裸露,保留該等第二區上的疏水材料層;(d)於該等裸露的第一區基板底面及該等第二區上形成一親水材料層,該親水材料層實質上厚度與該疏水材料層相同,且構成材料使液態黏膠佈覆時會傾向覆蓋散佈於整個表面;及(e)移除該等第二區上的親水材料層,保留該等第一區上的親水材料層,完成該黏膠自體成型結構,其中,該黏膠自體成型結構供液態黏膠自我校正位置至該等第一區,並自體成型一實質上呈半球狀的黏膠珠。A method for manufacturing a self-forming structure of a viscose formed on a wafer, comprising: (a) forming a plurality of regularly arranged circuit units on a top surface of a substrate, and defining a plurality of circuit elements on the bottom surface of the substrate Corresponding first region, and a plurality of second regions surrounding the first regions respectively; (b) forming a hydrophobic material layer on the bottom surface of the substrate, the constituent material of the hydrophobic material layer tending to cover the liquid adhesive tape Polycondensing into beads; (c) removing the hydrophobic material layer on the first regions to expose the bottom surface of the substrate, retaining the hydrophobic material layer on the second regions; (d) the bare first region substrates Forming a hydrophilic material layer on the bottom surface and the second regions, the hydrophilic material layer having substantially the same thickness as the hydrophobic material layer, and the constituent material tends to cover the entire surface when the liquid adhesive cloth is covered; and (e) Removing the hydrophilic material layer on the second regions, and retaining the hydrophilic material layer on the first regions to complete the self-forming structure of the adhesive, wherein the adhesive self-forming structure is provided for self-correction of the liquid adhesive To the first district and self-forming On the hemispherical glue beads. 依據申請專利範圍第5項所述的形成於晶圓的黏膠自體成型結構的製造方法,其中,該親水材料層是選自矽、 砷化鎵、藍寶石、金、鈦、銅等親水性水材,及此等之一組合製成薄膜。 The method for manufacturing a wafer-formed viscose auto-formed structure according to claim 5, wherein the hydrophilic material layer is selected from the group consisting of A hydrophilic water material such as gallium arsenide, sapphire, gold, titanium or copper, and a combination thereof is used to form a film. 依據申請專利範圍第5項所述的形成於晶圓的黏膠自體成型結構的製造方法,其中,該疏水材料層是選自具感光性之高分子製成之微柱狀結構。 The method for producing a self-forming structure of a wafer-formed viscose according to claim 5, wherein the hydrophobic material layer is a micro-columnar structure selected from a photosensitive polymer. 依據申請專利範圍第5項所述的形成於晶圓的黏膠自體成型結構的製造方法,還包含一步驟(f),是粗化該疏水材料層至平均粗糙度為32um。 The method for manufacturing a wafer-formed viscose auto-formed structure according to claim 5, further comprising a step (f) of roughening the hydrophobic material layer to an average roughness of 32 μm. 一種形成於晶圓之黏膠自體成形結構的製造方法,包含:(a)於一基板的頂面形成複數規則排列的電路單元;(b)於該基板的底面形成一材料層,並於該材料層定義出複數與該等電路單元相對應的第一區,及複數分別圍繞該等第一區的第二區;及(c)於每一第二區之材料層定義出複數平均高度為32um的疏水柱,且該等疏水柱彼此間距範圍為30μm~80μm,完成該黏膠自體成形結構,其中,該等疏水柱使一液態黏膠傾向在該等第二區上聚縮為珠狀,而在該等第一區傾向覆蓋散佈於表面,藉該黏膠自體成型結構以供液態黏膠自我校正位置至該等第一區,並自體成型一實質上呈半球狀的黏膠珠。 A method for manufacturing a self-forming structure of a viscose formed on a wafer, comprising: (a) forming a plurality of regularly arranged circuit units on a top surface of a substrate; (b) forming a material layer on a bottom surface of the substrate; The material layer defines a plurality of first regions corresponding to the circuit elements, and a plurality of second regions respectively surrounding the first regions; and (c) defining a complex average height for the material layers of each of the second regions a 32 um hydrophobic column, and the hydrophobic columns are spaced apart from each other by a range of 30 μm to 80 μm to complete the self-forming structure of the adhesive, wherein the hydrophobic columns tend to condense a liquid adhesive on the second regions. Beaded, and in the first region, tend to cover the surface, and the adhesive self-forming structure is used for the liquid glue to self-correct the position to the first regions, and is self-formed into a substantially hemispherical shape. Viscose beads. 依據申請專利範圍第9項所述的形成於晶圓的黏膠自體成型結構的製造方法,更包含一步驟(d),移除該等第 一區上的材料層。The method for manufacturing a self-forming structure of a wafer-formed adhesive according to claim 9 further comprises a step (d) of removing the first A layer of material on a zone. 依據申請專利範圍第9項所述的形成於晶圓的黏膠自體成型結構的製造方法,其中,該材料層是選自具感光性之高分子材料製成之微柱狀結構。The method for producing a self-forming structure of a wafer-formed viscose according to claim 9, wherein the material layer is a micro-columnar structure selected from the group consisting of photosensitive polymer materials. 依據申請專利範圍第9項所述的形成於晶圓的黏膠自體成型結構的製造方法,該步驟(b)中,該材料層是利用旋塗塗佈方式形成於該基板底面上。According to the manufacturing method of the wafer-formed viscose self-molding structure according to claim 9, in the step (b), the material layer is formed on the bottom surface of the substrate by spin coating. 依據申請專利範圍第9項所述的形成於晶圓的黏膠自體成型結構的製造方法,其中,該等疏水柱的形狀可以是角錐柱、圓錐柱、蜂槽,及截頭錐柱。The method for manufacturing a self-forming structure of a wafer-formed viscose according to claim 9, wherein the hydrophobic columns may be in the shape of a pyramidal column, a conical column, a bee, and a truncated cone. 依據申請專利範圍第9項所述的形成於晶圓的黏膠自體成型結構的製造方法,其中,該步驟(c)是利用黃光製程形成該等疏水柱。The method for manufacturing a wafer-formed viscose auto-molded structure according to claim 9, wherein the step (c) is to form the hydrophobic columns by a yellow light process.
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TWI248653B (en) * 2005-05-03 2006-02-01 Advanced Semiconductor Eng Method of fabricating wafer level package
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TWI288959B (en) * 2006-03-17 2007-10-21 Chipmos Technologies Inc Chip package and wafer treating method for making adhesive chips

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TWI273662B (en) * 2004-12-06 2007-02-11 Advanced Semiconductor Eng Method for chip bonding
TWI248653B (en) * 2005-05-03 2006-02-01 Advanced Semiconductor Eng Method of fabricating wafer level package
TWI270152B (en) * 2005-05-24 2007-01-01 Advanced Semiconductor Eng A wafer-level packaging method and a chip packaging structure
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