201001568 九、發明說明： 【發明所屬之技術領域】 本發明是有關於一種用於黏膠佈覆的製造方法， 特別是指一種應用半導體製程的形成於晶圓的黏膠自 體成型結構的製造方法。 【先前技術】 簡述由一晶圓（wafer )到複數電子元件的製作方 法’包含： 首先製備一基板，並在該基板頂面對應形成複數 電路單元。 再進行一切割步驟，對應形成在該基板上的電路 單元將該晶圓切割成複數晶片（chip )。 接著進行一固晶步驟，將黏膠點於一導線架（201001568 IX. Description of the Invention: Technical Field of the Invention The present invention relates to a manufacturing method for a viscous cloth, and more particularly to a method for manufacturing a self-forming structure of a veneer formed on a wafer using a semiconductor process. method. [Prior Art] A method of fabricating a wafer to a plurality of electronic components is described as follows: First, a substrate is prepared, and a plurality of circuit units are formed correspondingly on the top surface of the substrate. Further, a cutting step is performed to cut the wafer into a plurality of chips corresponding to the circuit unit formed on the substrate. Then performing a solid crystal step to place the glue on a lead frame (
Lead_Frame)的晶片墊（diepad)上，再將單一晶片定 置於黏膠上，藉著黏膠將該晶片固著於該晶片墊上。 由以上說明可知，自未切割晶圓到固晶的流程會 因為逐一點佈黏膠於單一晶片墊與單一晶片間，而^ 費大量工時。 此種缺失除了顯現於較早的導線架封裝方式之外 亦在球格陣列構裝（BGA)、晶片尺寸封裝的植球製 中出現類似問題。 ^ & V求格陣列構裝、晶片尺寸封裝是因應晶片的 力月匕日益增強，進而使得晶片對外的接點數量需要隨 之增加’以滿足逐漸增大的傳輸訊號流量。 201001568 片的 使得 更突 而對應大量的接點數量，所需的是逐一在晶 接點上佈植供後續電連接用的植球（BaU Array )， 對於在晶片的接點上逐—佈植錫球的製程而言， 顯了耗費工時的缺點。 無_在何種構裝製程中，如何提供一種能縮減固 晶製程的點膠、置晶等步驟的製造方法，i能縮減在On the die pad of Lead_Frame, a single wafer is placed on the adhesive, and the wafer is fixed to the wafer pad by adhesive. As can be seen from the above description, the process from the uncut wafer to the die-bonding process requires a large amount of man-hours due to the adhesive bonding between the single wafer pad and the single wafer. This lack of appearance, in addition to the earlier leadframe packaging, also presents similar problems in ball grid array (BGA), wafer size package ball placement. ^ & V grid array package, wafer size package is in response to the increasing strength of the wafer, so that the number of external contacts of the chip needs to increase accordingly to meet the increasing transmission signal flow. 201001568 The film makes it more prominent and corresponds to a large number of contacts. It is required to plant the ball bumps (BaU Array) for the subsequent electrical connection one by one on the crystal joints, for the wafers on the joints. In terms of the process of solder balls, the disadvantages of working hours are obvious. No. In what kind of manufacturing process, how to provide a manufacturing method that can reduce the steps of dispensing, crystallization, etc. of the solid crystal process, i can be reduced in
晶片的接點上點佈錫球的工時’都是業界與學界不斷 研究的重點。 【發明内容】 因此，本發明之目的，即在提供一種可以提高佈 覆黏膠效率的形成於晶圓的黏膠自體成型結構的製造 方法。 於是，本發明形成於晶圓的黏膠自體成型結構的 —種製造方法，首先，於一基板的頂面形成複數規則 排列的電路單元，且於該基板的底面定義出複數與該 等電路單元相對應的第一區，及複數分別環繞該等第 —區的第二區。 再於該基板底面形成一親水材料層，該親水材料 層的構成材料使一液態黏膠佈覆時會傾向覆蓋散佈於 整個表面。 然後，移除該等第二區上的親水材料層使基板底 面裸露，保留該等第一區上的親水材料層。 接者’在a玄專裸露的第二區基板底面及該等第— 區形成一疏水材料層，該疏水材料層實質上厚度與該 201001568 親水材料層相同’且構成材料使液態黏膠佈覆時t {、 向聚縮成珠狀。 最後，移除該等第一 等第二區上的疏水材料層 ’保留該 成型結構 區上的疏水材料層 ’完成該黏膠自體 其中，該黏膠自體成型結構供液態黏膠自我校正 位置至該等第一區，並自體成型一實質上呈 王午琢狀的 黏膠珠。The working hours of the solder balls on the contacts of the wafers are the focus of continuous research in the industry and the academic community. SUMMARY OF THE INVENTION Accordingly, it is an object of the present invention to provide a method of manufacturing a self-forming structure of a veneer formed on a wafer which can improve the efficiency of coating. Therefore, in the manufacturing method of the self-molding structure of the adhesive formed on the wafer, firstly, a plurality of regularly arranged circuit units are formed on the top surface of a substrate, and a plurality of circuits and the circuits are defined on the bottom surface of the substrate. The first zone corresponding to the unit, and the plural respectively surround the second zone of the first zone. Further, a hydrophilic material layer is formed on the bottom surface of the substrate, and the constituent material of the hydrophilic material layer tends to cover the entire surface when a liquid adhesive cloth is coated. The hydrophilic material layer on the second regions is then removed to expose the substrate bottom surface, retaining the hydrophilic material layer on the first regions. The connector 'forms a hydrophobic material layer on the bottom surface of the substrate of the second region exposed by the abalone and the first region, the hydrophobic material layer has the same thickness as the 201001568 hydrophilic material layer' and constitutes a material for covering the liquid adhesive tape When t {, the polycondensation into beads. Finally, removing the hydrophobic material layer on the first second region, 'retaining the hydrophobic material layer on the shaped structural region', completes the self-adhesive of the adhesive, and the self-forming structure of the adhesive is self-correcting for the liquid adhesive. Positioned to the first zone and self-formed a viscose bead substantially in the shape of a king.
此外，形成於晶圓的黏膠自體成型結構的另—種 製造方法包含以下步驟。 先在該基板頂面形成該等電路單元。 再於該基板底面形成一材料層。 接著’於該材料層定義出與該等電路單元相對應 的該等第一區’及該等分別圍繞該等第一區的第二區 U 最後，於每一第二區之材料層定義出複數平均高 度為32um的疏水柱’且該等疏水柱彼此間距範圍為 3〇um〜80um ;液態黏膠因該等疏水柱而傾向在該等第二 區上聚縮為珠狀’在該等第一區則傾向覆蓋散佈於表 面。 本發明之功效在於：製作該黏膠自體成型結構後 ’利用黏膠自身内聚力與該等第一、二區的表面性質 父互作用’使黏膠接觸該自體成型結構後，得以定位 於對應該等電路單元的第—區，並呈半球狀黏膠珠， 201001568 使黏夥此一次完成佈覆而有效提高佈覆黏膠效率。 【實施方式】 / ° 有關本發明之前述及其他技術内容、特點與功 ’在以下配合參考圖式之三個較佳實施例的詳細說明 中’將可清楚的呈現。 參閱圖！，本發明形成於晶圓的黏膠自體成型 3的製造方法的第一較佳實施例，包含以下步驟。Further, another manufacturing method of the viscose auto-molded structure formed on the wafer includes the following steps. The circuit units are first formed on the top surface of the substrate. A material layer is further formed on the bottom surface of the substrate. Then, 'the first layer corresponding to the circuit elements is defined in the material layer' and the second regions U respectively surrounding the first regions are finally defined in the material layer of each second region a plurality of hydrophobic columns having an average height of 32 um and wherein the hydrophobic columns are spaced apart from each other by a range of from 3 〇 um to 80 um; the liquid viscous tends to condense into beads on the second regions due to the hydrophobic columns. The first zone tends to cover the surface. The effect of the invention is that after the self-forming structure of the viscose is made, 'the cohesive force of the adhesive itself and the surface property of the first and second regions are interacted with each other', so that the adhesive contacts the auto-formed structure, and is positioned. Corresponding to the first area of the circuit unit, and is a hemispherical adhesive bead, 201001568 enables the adhesive to complete the cloth coating once and effectively improve the efficiency of the coating. The above and other technical contents, features and advantages of the present invention will be apparent from the following detailed description of the preferred embodiments of the present invention. See the picture! A first preferred embodiment of the method for producing an adhesive automolecule 3 formed on a wafer of the present invention comprises the following steps.
、…首先，實施一步驟81，先於—基板i的頂面利用 半導體製程，形成複數規則排列的電路單元2 ^ 再於該基板1的底面定義出複數與該等電路單元2 相對應的第一區31，及複數分別環繞該等第一區31 第二區32。 ' ,再實施一步驟82,於該基板丨底面形成一親水材 料層4。 文其中，該親水材料層4是選自矽、砷化鎵⑴认勾' 藍寶石、金、鈦、銅等親水性材料，及此等之一組合 製成導電薄膜，使—液態黏膠6佈覆於該親水材料層4 時，與該親水材料層4接觸角較小，並傾向覆蓋沾附 於整個表面，gP此時該親水材料層4與黏膠6的界面 張力大於黏膠6本身的内聚力。 接著實施一步驟83，移除該等第二區32上的親水 材料層4，使基板1底面裸露。 並且在該步驟83中，該等第一區31上的親水材 料層4被保留。 201001568 然後實施一步驟84，於該等裸露的第二區32基板 1底面，以及該等第一區31皆形成—疏水材料層5 ^ 該疏水材料層5的厚度實質上與該親水材料層4 相同。 該疏水材料層5是選自感光性高分子材料，及此 等製成之微柱狀結構，使液態黏膠6佈覆於該疏水材 料層5時會傾向聚縮成珠狀，即黏膠6自身内聚力大 於與該疏水材料層5間的界面張力，使得㈣6容易 滚動並且不易附著於該疏水材料層5上。 最後，實施一步驟85，移除該等第一區31上的疏 水材料層5，並且保留該等第二區32上的疏水材料層 5 〇 由於該疏水材料層5與該親水材料層4的厚度相 當，使得該黏膠自體成型結構3的成品是概呈一平坦 面，且該疏水材料層5與該親水材料層4對應該等電 路單元2規則分佈於該基板1底面。 藉由上述步驟所完成的形成於晶圓的黏膠自體成 型結構3，供液態黏膠6接觸該黏膠自體成型結構3時 自動定位。 若黏膠6接觸該等第二區32時，由於該等第二區 32上形成有該疏水材料層5，使得黏膠6能夠自動地 自我扠正位置，而定位於形成有該親水材料層4的該 等第一區31上，並自體成型—實質上呈半球狀的黏膠 珠6 〇 9 201001568 參閱圖2’值得一提的是’還可實施-步驟86, 粗化該疏水材料層5至平均粗糙度為32um，以提高該 疏水材料層5的疏水特性，使黏膠6的定位更精確〜 參閱圖3’本發明的第二較佳實施例與該第—較佳 實施例的製造方式大致相同，不同之處在於與該第： 較佳實施例中的該親水材料層4與該疏水材料層5形 成順序相反。 / 在第二較佳實施例中，是先在一步冑82，中形 疏水材料層5。 μ 而在一步驟83,中再移除該等第一區31上的疏水 材料層5。 然後實施一步驟84,，於該等裸露的第一區3丨及 该等第二區3 2上形成該親水材料層4。 最後，實施一步驟85,，移除該等第二區32上的 親水材料層4，即完成該黏膠自體成型結構3，且本第 一較佳貫施例的成品與該第一較佳實施例並無不同。 參閱圖4,本發明的第三較佳實施例包含以下步驟 〇 同樣地先實施一步驟9 1，於該基板丨的頂面形成 該等規則排列的電路單元2。 接著實施一步驟92,於該基板i的底面利用旋塗 塗佈方式形成一材料層7。 且該材料層7是選自感光性高分子材料，及此等 之—組合製成微柱狀結構。 10 201001568 區32 該:=::::== 二區3 2之材料層 71 ’即完成該黏 然後’實施一步驟93，於每—第 7利用薄膜沉積製程形成複數疏水柱 膠自體成形結構。 其中，該等疏水柱71的平均高度為32·，而彼此First, a step 81 is performed to form a plurality of regularly arranged circuit units 2 by using a semiconductor process on the top surface of the substrate i. Further, a plurality of circuits corresponding to the circuit elements 2 are defined on the bottom surface of the substrate 1. A zone 31, and a plurality of zones surround the first zone 31 second zone 32, respectively. Then, a step 82 is performed to form a hydrophilic material layer 4 on the bottom surface of the substrate. Wherein, the hydrophilic material layer 4 is selected from the group consisting of yttrium, gallium arsenide (1) sapphire, sapphire, gold, titanium, copper and other hydrophilic materials, and one of these combinations is made into a conductive film, so that - liquid glue 6 cloth When the hydrophilic material layer 4 is applied, the contact angle with the hydrophilic material layer 4 is small, and the coating tends to cover the entire surface, and the interfacial tension between the hydrophilic material layer 4 and the adhesive 6 is greater than that of the adhesive 6 itself. Cohesion. Next, a step 83 is performed to remove the hydrophilic material layer 4 on the second regions 32 to expose the bottom surface of the substrate 1. And in this step 83, the hydrophilic material layer 4 on the first regions 31 is retained. 201001568 then performing a step 84 on the bottom surface of the bare second region 32 substrate 1, and the first regions 31 are all formed - a hydrophobic material layer 5 ^ the thickness of the hydrophobic material layer 5 is substantially the same as the hydrophilic material layer 4 the same. The hydrophobic material layer 5 is selected from the group consisting of photosensitive polymer materials, and the micro-columnar structure formed therein, so that when the liquid adhesive 6 is coated on the hydrophobic material layer 5, it tends to be polycondensed into beads, that is, the adhesive. 6 The cohesive force of itself is greater than the interfacial tension with the layer of hydrophobic material 5, so that (4) 6 is easy to roll and is not easily attached to the layer 5 of hydrophobic material. Finally, a step 85 is performed to remove the hydrophobic material layer 5 on the first regions 31 and to retain the hydrophobic material layer 5 on the second regions 32 due to the hydrophobic material layer 5 and the hydrophilic material layer 4 The thickness of the adhesive body is substantially flat, and the hydrophobic material layer 5 and the hydrophilic material layer 4 correspond to the circuit unit 2 regularly distributed on the bottom surface of the substrate 1. The self-forming structure 3 of the adhesive formed on the wafer, which is completed by the above steps, is automatically positioned when the liquid adhesive 6 contacts the adhesive self-forming structure 3. If the adhesive 6 contacts the second regions 32, since the hydrophobic material layer 5 is formed on the second regions 32, the adhesive 6 can automatically self-align the position and be positioned to form the hydrophilic material layer. 4 of the first zone 31, and self-forming - substantially hemispherical viscose beads 6 〇 9 201001568 See Figure 2 'It is worth mentioning that 'may be implemented - step 86, roughening the hydrophobic material Layer 5 to an average roughness of 32 um to improve the hydrophobic character of the hydrophobic material layer 5 to make the positioning of the adhesive 6 more precise ~ Referring to Figure 3, a second preferred embodiment of the present invention and the first preferred embodiment The manufacturing method is substantially the same except that the hydrophilic material layer 4 and the hydrophobic material layer 5 are formed in the opposite order to the first embodiment. / In the second preferred embodiment, the layer of hydrophobic material 5 is formed in a step 82. In a step 83, the hydrophobic material layer 5 on the first regions 31 is removed. A step 84 is then performed to form the hydrophilic material layer 4 on the bare first regions 3 and the second regions 3 2 . Finally, a step 85 is performed to remove the hydrophilic material layer 4 on the second regions 32, that is, the adhesive self-forming structure 3 is completed, and the finished product of the first preferred embodiment is compared with the first The preferred embodiment is no different. Referring to Fig. 4, a third preferred embodiment of the present invention comprises the following steps: 〇 Similarly, a step 9.1 is first performed to form the regularly arranged circuit units 2 on the top surface of the substrate stack. Next, a step 92 is performed to form a material layer 7 on the bottom surface of the substrate i by spin coating. Further, the material layer 7 is selected from photosensitive polymer materials, and the like, and is combined to form a micro-columnar structure. 10 201001568 Area 32 The:=::::== The material layer 71 of the second zone 3 2 'completes the viscosity and then performs a step 93 to form a complex hydrophobic colloid auto-formation in each of the 7th thin film deposition processes. structure. Wherein the hydrophobic columns 71 have an average height of 32·, while each other
間距為60Um ’單—疏水柱71的形狀可以是角錐柱、圓 錐柱、蜂槽，及截頭錐柱。 因該等疏水柱71的結構特性，使得液態黏膠6不 易停留在該等第二區32上。 相較之下，黏膠6較易覆蓋於該等第一區31上， ::藉該黏膠自體成型結構3供黏膠6定位於該等第 一區31 ’並自體成型成黏膠珠6。 參閱圖5，值得一提的是，也可實施一步驟 移除該等第-區31上的材料層7，裸露該等第一區31 的基板1底面，同樣具有親水效果。 ,利用本發明开》成於晶圓的黏膠自體成型結構3的 衣k方法，完成該黏膠自體成型結構3後，將本發明 應用於固晶製程時’是先將該晶圓對應該等電路單元2 切割為複數晶片，但仍保持該等晶片聚集成該晶圓態 樣，再將液態黏膠6 —次塗佈於該晶圓底面，節省逐 一點佈黏膠6的工時，並利用該等晶片上的自體成型 、’σ構 讓液態黏膠6定位在該等第一區3 1形成黏膠 11 201001568 珠6 藉此，之後的製程再利用自體成型於該等晶片上 的黏膠珠6，將該等晶片初步黏著於晶片墊上，接著進 订熱處理製程，使黏膝珠6溶融後，再行固結於晶片 墊上，即快速地完成固晶製程。 由於黏膠6是一次佈覆於該晶圓上的全部晶片上 ，且利用該自體成型結構，讓黏膠6能在佈覆的同時 自動校正位置位於該等第一區31上，取代一次行程中 僅此針對早一晶片點膠的製程，大幅減少了點佈黏膠6 的工時’且亦簡化了製程。 ^ 另外，由於球格陣列構裝、晶方尺度構裝皆須佈 植大量錫球於具有多數接聊的晶片。 頁佈 € 因此將本發明所製得的該黏膠自體成型結構3，應 用：：列構裝時，是將該自體成型…成長於該晶 廿〜腳位置’讓液態銲錫在塗佈時’能自動校正位 。、’定位於接腳上，能讓液態銲錫-次佈植定位完成 所以無須花費工時在每一接 化棺诂制如a 伐蜊點佈錫球，同樣簡 求裝程與縮減工時。 除上述優點之外，藉由本發明 成型社播q母 ，衣什及黏膠自體 I、、。構3還具有黏膠6定量 上述製傻點利用本發明的 ，進而能固定每隹r ^ 匕31的面積大小 口疋母一第一區31所佈覆 該晶圓的整體平整度。 I的黏膝…提高 12 201001568 - ’不上所述，利用液恶黏勝6對於該等第一區3 1與 該等第二區32的浸潤能力不同，讓液態黏膠6在佈覆The spacing of the 60 Um 'single-hydrophobic column 71 may be a pyramidal cone, a conical cylinder, a bee, and a truncated cone. Due to the structural characteristics of the hydrophobic columns 71, the liquid glue 6 does not easily stay on the second regions 32. In contrast, the adhesive 6 is more easily covered on the first regions 31, and the adhesive 6 is positioned in the first region 31' by the self-forming structure 3 of the adhesive and is self-formed into a paste. Glue beads 6. Referring to Fig. 5, it is worth mentioning that a step of removing the material layer 7 on the first-regions 31 and exposing the bottom surface of the substrate 1 of the first regions 31 also have a hydrophilic effect. By using the method of the present invention to form the self-forming structure 3 of the self-forming structure of the wafer, after the self-forming structure 3 of the adhesive is completed, the invention is applied to the solid-crystal manufacturing process. The circuit unit 2 is cut into a plurality of wafers, but the wafers are still integrated into the wafer, and the liquid glue 6 is applied to the bottom surface of the wafer to save the glue 6 At the same time, using the self-forming, 'σ configuration on the wafers, the liquid glue 6 is positioned in the first regions 3 1 to form the glue 11 201001568 beads 6 , and the subsequent process is then self-molded. The adhesive beads 6 on the wafer are preliminarily adhered to the wafer mat, and then the heat treatment process is performed, so that the adhesive knee beads 6 are melted and then fixed on the wafer mat, that is, the solid crystal forming process is completed quickly. Since the adhesive 6 is coated on all the wafers on the wafer at one time, and the self-forming structure is used, the adhesive 6 can be automatically positioned at the first region 31 while being covered, instead of once. In the course of the trip, only the process of dispensing the wafer in the early stage has greatly reduced the man-hour of the glue 6 and simplified the process. ^ In addition, due to the grid array structure and the crystal scale structure, a large number of solder balls must be implanted on the wafer with most of the contacts. Therefore, the adhesive self-molding structure 3 produced by the present invention is applied to: when the column is assembled, the self-molding is formed... growing in the position of the wafer ~ foot position to allow the liquid solder to be coated When 'can automatically correct the bit. , “Located on the pin, the liquid solder-sub-planting position can be completed. Therefore, it is not necessary to spend a lot of time in each connection, such as a cutting point of the solder ball, which also requires simple loading and reduced working hours. In addition to the above advantages, the molding machine of the present invention broadcasts the mother, the clothing and the self-adhesive I. The structure 3 also has the viscosity of the viscose 6 as described above. The above-mentioned system can be used to fix the area of each 隹r ^ 匕31, and the overall flatness of the wafer is covered by the first region 31. I'm stuck knees...Improved 12 201001568 - 'Without the above, the use of liquid viscous viscous 6 is different for the wetting ability of the first zone 3 1 and the second zone 32, allowing the liquid glue 6 to be laid
於《亥曰曰圓的自體成型結構時，傾向遠離該等第二區U 並匯聚於該等第一區31，並於該等第_區Η上自體成 型成黏膠珠6’提高了佈覆黏膠6的效率，故確實能達 成本發明之目的。 ’准以上所述者，僅為本發明之較佳實施例而已， #不能以此限定本發明實施之範圍，即大凡依本發明 申請專利範圍及發明說明内容所作之簡單的等效變化 與修飾，皆仍屬本發明專利涵蓋之範圍内。 【圖式簡單說明】 圖1是一流程示意、圖，說明本發明形成於晶圓的 黏膠自體成型結構的製造方法的一第一較佳實施例； 圖2是一示意圖，說明本第一較佳實施例的一粗 化步驟； u ®3是一類似於圖1的視圖，說明本發明形成於 晶圓的黏膠自體成型結構的製造方法的一第二較佳實 施例； 圖4是一流程示意圖，說明本發明形成於晶圓的 黏膠自體成型結構的製造方法的一第三較佳實施例； 及 圖5是一示意圖，說明本第三較佳實施例移除複 數第一區的一材料層。 13 201001568 【主要元件符號說明】 1 ..........基板 2 ..........電路單元 3 ..........黏膠自體成型結構 31 ........第一區 32 ........第二區 4 ..........親水材料層 5 ..........疏水材料層 % 6..........黏膠 7 ..........材料層 71 ........疏水柱 81 ........步驟 82 ........步驟 83 ........步驟 84 ........步驟 .85 ........步驟 8 6 ........步驟 8Γ .......步驟 82’ .......步驟 83’ .......步驟 84’ .......步驟 8 5’ .......步驟 91 ........步驟 92 ........步驟 14 201001568 93 ........步驟 94 ........步驟In the self-forming structure of the 曰曰 曰曰 circle, it tends to be away from the second regions U and converge on the first regions 31, and self-formed into the viscous beads 6' The efficiency of the coating of the adhesive 6 is indeed achieved by the object of the present invention. The above is only the preferred embodiment of the present invention, and the scope of the present invention is not limited thereto, that is, the simple equivalent change and modification of the patent application scope and the description of the invention according to the present invention. All remain within the scope of the invention patent. BRIEF DESCRIPTION OF THE DRAWINGS FIG. 1 is a flow chart showing a first preferred embodiment of a method for manufacturing a self-forming structure of a viscose formed on a wafer according to the present invention; FIG. 2 is a schematic view showing the first embodiment A roughening step of a preferred embodiment; u ® 3 is a view similar to that of FIG. 1 illustrating a second preferred embodiment of the method of fabricating the self-forming structure of the adhesive formed on the wafer of the present invention; 4 is a flow chart illustrating a third preferred embodiment of the method for manufacturing a self-forming structure of the adhesive formed on the wafer of the present invention; and FIG. 5 is a schematic view showing the third preferred embodiment of the present invention A layer of material in the first zone. 13 201001568 [Explanation of main component symbols] 1 .......... Substrate 2 .......... Circuit unit 3 ..... Viscose self-forming structure 31 ........The first zone 32 ........the second zone 4 ..........the hydrophilic material layer 5 ..........hydrophobic Material layer % 6..........viscose 7 ..........material layer 71 ........hydrophobic column 81 ........step 82 ........Step 83 ........Step 84 ........Steps .85 ........Step 8 6 ....... Step 8Γ .......Step 82'....Step 83'....Step 84'.......Step 8 5'... Step 91 ........Step 92 ........Step 14 201001568 93 ........Step 94 ........Steps
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