TWI383205B - Pixel structure and repair method thereof - Google Patents

Pixel structure and repair method thereof Download PDF

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TWI383205B
TWI383205B TW97132690A TW97132690A TWI383205B TW I383205 B TWI383205 B TW I383205B TW 97132690 A TW97132690 A TW 97132690A TW 97132690 A TW97132690 A TW 97132690A TW I383205 B TWI383205 B TW I383205B
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pixel
line
gate
common electrode
structures
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TW97132690A
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TW201009433A (en
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Juihsin Tsai
Hung Jen Wang
Hsiu Lin Chan
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Hannstar Display Corp
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Description

畫素結構與其修補方法Pixel structure and its repair method

本發明係關於薄膜電晶體液晶顯示器,特別是關於薄膜電晶體液晶顯示器的畫素結構與畫素修補方法。The present invention relates to a thin film transistor liquid crystal display, and more particularly to a pixel structure and a pixel repairing method for a thin film transistor liquid crystal display.

薄膜電晶體液晶顯示器(Thin Film Transistor-Liquid Crystal Display,TFT-LCD)包含一薄膜電晶體基板與一彩色濾光片基板,兩基板各含有電極且兩基板間填充有液晶,而液晶對光的穿透性是由供給到電極的電壓所決定。A Thin Film Transistor-Liquid Crystal Display (TFT-LCD) includes a thin film transistor substrate and a color filter substrate. The two substrates each have an electrode and the liquid crystal is filled between the two substrates. Penetration is determined by the voltage supplied to the electrodes.

薄膜電晶體基板具有複數條閘極線(gate line)與資料線(data line),每兩條閘極線與兩條資料線交叉包圍構成一個畫素(pixel),而畫素的陣列排列構成薄膜電晶體的顯示區域。The thin film transistor substrate has a plurality of gate lines and data lines, and each of the two gate lines and the two data lines are surrounded by a pixel to form a pixel, and the array of pixels is arranged. The display area of the thin film transistor.

第一圖至第三圖顯示三種習知技術的畫素結構示意圖,為求簡潔,圖中僅顯示重要的元件,省略次要的元件。參考第一圖,每兩條閘極線1與兩條資料線3定義一個畫素,因此第一圖顯示了兩個畫素結構。每個畫素各包含有一閘極5、一源極7、一汲極9、一畫素電極11、一共電極線13。其中,源極7、汲極9、資料線3位於同一層且源極7與資料線3電性連接。另外,畫素電極11位在源極7、汲極9、資料線3上方且透過接觸窗(未顯示)與汲極電性連 接。另外,共電極線13、閘極5、閘極線1位於同一層且位於源極7、汲極9、資料線3下方。在每個畫素中,畫素電極11與共電極線13形成平行板電容,作為畫素的儲存電容,儲存電容主要是為了讓充好電的畫素的電壓能保持到下一次更新畫面的時候。第一圖顯示由共電極線13構成的儲存電容結構,大致呈一英文字母「H」型。The first to third figures show schematic diagrams of the pixel structure of the three conventional techniques. For the sake of brevity, only important elements are shown in the figure, and the minor elements are omitted. Referring to the first figure, each of the two gate lines 1 and the two data lines 3 define a pixel, so the first figure shows two pixel structures. Each of the pixels includes a gate 5, a source 7, a drain 9, a pixel electrode 11, and a common electrode line 13. The source 7, the drain 9, and the data line 3 are located in the same layer, and the source 7 is electrically connected to the data line 3. In addition, the pixel electrode 11 is located above the source 7, the drain 9, and the data line 3 and is electrically connected to the drain through a contact window (not shown). Pick up. Further, the common electrode line 13, the gate 5, and the gate line 1 are located in the same layer and are located below the source 7, the drain 9, and the data line 3. In each pixel, the pixel electrode 11 and the common electrode line 13 form a parallel plate capacitance as a storage capacitor of the pixel, and the storage capacitor is mainly for keeping the voltage of the charged pixel until the next update of the picture. time. The first figure shows a storage capacitor structure composed of a common electrode line 13, which is roughly in the form of an English letter "H".

關於第一圖中各元件的功能、關聯性與形成方法,可參考已經公開的文件,例如美國專利US7,253,851所述。With regard to the function, association and formation of the various elements in the first figure, reference is made to the documents already disclosed, for example as described in U.S. Patent No. 7,253,851.

第二圖顯示另一種習知的畫素結構,與第一圖不同處在於,由共電極線13構成的儲存電容結構,大致呈一鐘型;第三圖顯示另一種習知的畫素結構,與第一圖不同處在於,由共電極線13構成的儲存電容結構,大致呈「一」字型。The second figure shows another conventional pixel structure, which differs from the first figure in that the storage capacitor structure composed of the common electrode lines 13 is substantially in a bell shape; the third figure shows another conventional pixel structure. The difference from the first figure is that the storage capacitor structure composed of the common electrode lines 13 has a substantially "one" shape.

在生產過程中,製程污染、塵埃、靜電等因素可能會造成畫素的信號斷路或短路,使畫素的顯示異常,造成亮點、暗點、微輝點等缺陷。其中,亮點缺陷因為在全黑畫面時也是亮的,人眼容易察覺,因此必須將具有亮點缺陷的畫素修補成暗點。但是,習知的畫素結構,在進行畫素修補時,會產生一些問題。In the production process, factors such as process pollution, dust, static electricity, etc. may cause the signal of the pixel to be broken or short-circuited, causing the display of the pixel to be abnormal, causing defects such as bright spots, dark spots, and micro-bright spots. Among them, the bright spot defect is also bright when the black screen is full, and the human eye is easy to detect, so the pixel with the bright spot defect must be repaired into a dark spot. However, the conventional pixel structure causes some problems when the pixel is repaired.

第四圖至第六圖以第一圖的「H」型儲存電容結構為例,顯示習知一畫素結構產生亮點缺陷的雷射修補方法。 如第四圖所示,畫素電極11與共電極線13因為製程的塵埃污染而短路15,因此產生亮點缺陷。如第五圖所示,為將亮點修補成暗點,進行雷射修補,以雷射光使得畫素電極11與閘極線1短路17,但是因為共電極線13與畫素電極11的短路15也會影響到閘極訊號,並會造成亮線的缺陷,因此還必須將傳送至此畫素的共電極線13切斷。如第六圖所示,以雷射光切斷19傳至修補畫素的共電極線13,當切斷共電極線13後,共電極訊號無法傳至此修補畫素,形成暗點。The fourth to sixth figures take the "H" type storage capacitor structure of the first figure as an example, and show a laser repairing method in which a conventional pixel structure produces a bright spot defect. As shown in the fourth figure, the pixel electrode 11 and the common electrode line 13 are short-circuited 15 due to dust contamination of the process, and thus a bright spot defect is generated. As shown in the fifth figure, in order to repair the bright spot to a dark spot, laser repair is performed, so that the pixel electrode 11 is short-circuited with the gate line 1 by the laser light, but the short circuit of the common electrode line 13 and the pixel electrode 11 is 15 It also affects the gate signal and causes defects in the bright line. Therefore, the common electrode line 13 transmitted to this pixel must also be cut off. As shown in the sixth figure, the laser beam cut 19 is transmitted to the common electrode line 13 of the repaired pixel. When the common electrode line 13 is cut, the common electrode signal cannot be transmitted to the repaired pixel to form a dark spot.

上述的習知畫素結構與修補方法,當共電極線13被切斷後,共電極訊號傳至此修補畫素時會中斷不連貫,影響到其他沒有缺陷的畫素;此外,習知的畫素結構與修補方法,很可能會造成其他缺陷。In the above conventional pixel structure and repair method, when the common electrode line 13 is cut off, the common electrode signal is interrupted to be discontinuous when transmitted to the repaired pixel, affecting other pixels without defects; in addition, the known pixel Structure and repair methods are likely to cause other defects.

第七A圖與第七B圖以第二圖的鐘型儲存電容結構為例,顯示習知畫素結構與修補方法的其他缺失,其中第七B圖是第七A圖在A-A’方向的剖面圖。第七B圖並顯示了第七A圖沒有繪出的一些次要元件,包含一閘極絕緣層23、一被動層25、一介電層27。7A and 7B take the bell-type storage capacitor structure of the second figure as an example, showing other defects of the conventional pixel structure and repair method, wherein the seventh B is the seventh A picture in A-A' A cross-sectional view of the direction. FIG. 7B shows some minor components not shown in FIG. A, including a gate insulating layer 23, a passive layer 25, and a dielectric layer 27.

如第七A圖所示,當上方的畫素發生畫素電極11與共電極線13短路15而產生亮點缺陷時,會以雷射光使得畫 素電極11與閘極線1短路,並以雷射29(見第七B圖)切斷19傳送至此畫素的共電極線13。As shown in FIG. 7A, when the upper pixel occurrence pixel 11 and the common electrode line 13 are short-circuited 15 to produce a bright spot defect, the laser light is used to make the picture The element electrode 11 is short-circuited with the gate line 1, and is cut by the laser 29 (see FIG. 7B) 19 to the common electrode line 13 of this pixel.

但是,如第七B圖所示,由於畫素設計上為了獲得最大的開口率,往往會將共電極線13與資料線3的距離設計至最小值,由於共電極線13與資料線3的距離相當小,使得雷射29切斷19畫素電極11下方的共電極線13時,很容易導致共電極線13與資料線3短路21,造成更嚴重的亮線缺陷。However, as shown in FIG. 7B, since the pixel ratio is designed to obtain the maximum aperture ratio, the distance between the common electrode line 13 and the data line 3 is often designed to a minimum value due to the common electrode line 13 and the data line 3 The distance is relatively small, so that when the laser 29 cuts off the common electrode line 13 under the 19-pixel electrode 11, it is easy to cause the common electrode line 13 and the data line 3 to be short-circuited 21, causing more serious bright line defects.

除了上述缺失,習知的畫素結構,共電極線13與資料線3之間的寄生電容過大,造成共電極訊號與資料訊號的失真。In addition to the above-mentioned missing, the conventional pixel structure, the parasitic capacitance between the common electrode line 13 and the data line 3 is too large, causing distortion of the common electrode signal and the data signal.

因此,亟需一種新的畫素結構與畫素修補方法,在不影響開口率的情形下,改善雷射修補時產生的資料線3容易與共電極線13短路21、共電極訊號中斷不連貫等缺失,並減少共電極線13與資料線3之間的寄生電容,避免共電極訊號與資料訊號的失真。Therefore, there is a need for a new pixel structure and pixel repair method. Without affecting the aperture ratio, the data line 3 generated during the laser repair is easily short-circuited with the common electrode line 21, and the common electrode signal is discontinuously discontinuous. Wait for the missing, and reduce the parasitic capacitance between the common electrode line 13 and the data line 3, to avoid distortion of the common electrode signal and the data signal.

本發明之一目的在於提供一種畫素結構,該畫素結構在不影響開口率的情形下,改善雷射修補時資料線容易與共電極線短路、共電極訊號中斷後不連貫的問題,並減少 共電極線與資料線之間的寄生電容,避免共電極訊號與資料訊號的失真。An object of the present invention is to provide a pixel structure, which improves the problem that the data line is easily short-circuited with the common electrode line and the co-electrode signal is discontinuous after the laser repair is performed without affecting the aperture ratio, and cut back The parasitic capacitance between the common electrode line and the data line avoids distortion of the common electrode signal and the data signal.

本發明另一目的在於提供一種畫素的修補方法,該方法可以改善雷射修補時產生的資料線容易與共電極線短路、共電極訊號中斷不連貫等問題。Another object of the present invention is to provide a method for repairing a pixel, which can improve the problem that the data line generated during laser repair is easily short-circuited with the common electrode line and the common electrode signal is discontinuous.

根據上述目的,本發明實施例揭露一畫素結構,包含兩縱向排列的資料線;兩橫向排列的閘極線;兩畫素,由兩資料線與閘極線交叉包圍所定義;兩畫素電極,分別設置於兩畫素內;及一共電極線,包含兩分枝結構與兩延伸結構,共電極線分別電性連接兩分枝結構,兩分枝結構分別電性連接兩延伸結構,兩延伸結構分別設置於兩畫素內。According to the above object, an embodiment of the invention discloses a pixel structure comprising two longitudinally arranged data lines; two laterally arranged gate lines; two pixels defined by two data lines and a gate line crossing; two pixels The electrodes are respectively disposed in two pixels; and a common electrode line includes a two-branch structure and two extension structures, the common electrode lines are electrically connected to the two branch structures, and the two branch structures are electrically connected to the two extension structures, respectively. The extension structures are respectively disposed in two pixels.

本發明其他實施例中,對於共電極線的分枝結構其形狀、數量、所在位置沒有限制。In other embodiments of the present invention, there is no limitation on the shape, number, and location of the branching structure of the common electrode line.

根據本發明畫素結構,本發明實施例揭露一種畫素修補方法,首先提供具有上述結構特徵的兩畫素,而當兩畫素至少其中之一具有缺陷,切斷該具有缺陷畫素的分枝結構,藉此中斷傳送至該缺陷畫素的共電極訊號,上述修補方法可能再包含將畫素電極與閘極線短路的步驟。According to the pixel structure of the present invention, an embodiment of the present invention discloses a pixel repairing method, which first provides two pixels having the above structural features, and when at least one of the two pixels has a defect, the segment having the defective pixel is cut. The branch structure, thereby interrupting the common electrode signal transmitted to the defective pixel, and the repairing method may further comprise the step of shorting the pixel electrode to the gate line.

第八圖顯示本發明畫素結構的實施例。本發明畫素結構的實施例,每兩條縱向排列的資料線41與兩條橫向排列的閘極線43交叉包圍定義了兩個畫素,此兩個畫素各具有一畫素電極39並且共用一條共電極線45。其中,於兩畫素區域內,共電極線45包含兩分枝結構47與兩延伸結構49,共電極線45分別電性連接兩分枝結構47,兩分枝結構47分別電性連接兩延伸結構49,兩延伸結構49分別設置於該兩畫素內,與畫素電極49形成一夾層電容,或稱儲存電容,使該畫素充好電的電壓能保持到下一次更新畫面的時候。The eighth figure shows an embodiment of the pixel structure of the present invention. In an embodiment of the pixel structure of the present invention, each two longitudinally arranged data lines 41 and two laterally arranged gate lines 43 are surrounded to define two pixels, each of which has a pixel electrode 39 and A common electrode line 45 is shared. The common electrode line 45 includes two branching structures 47 and two extending structures 49. The common electrode lines 45 are electrically connected to the two branching structures 47, respectively. The two branching structures 47 are electrically connected to each other. The structure 49 and the two extension structures 49 are respectively disposed in the two pixels, and form a sandwich capacitor, or a storage capacitor, with the pixel electrode 49, so that the voltage charged by the pixel can be maintained until the next update of the picture.

此外,每個畫素具有一閘極51、一源極53、一汲極55,其中閘極51與閘極線43電性連接,源極53與資料線41電性連接,畫素電極經由接觸窗(未顯示)與汲極電性連接。其中源極53與汲極55的角色可以互換,嚴格來說,當畫素充電時,與資料線相連接的稱為源極,但畫素放電時,與資料線電性連接的可稱為汲極。In addition, each pixel has a gate 51, a source 53 and a drain 55. The gate 51 is electrically connected to the gate line 43. The source 53 is electrically connected to the data line 41. A contact window (not shown) is electrically connected to the drain. The roles of the source 53 and the drain 55 can be interchanged. Strictly speaking, when the pixel is charged, the source connected to the data line is called a source, but when the pixel is discharged, it is electrically connected to the data line. Bungee jumping.

在垂直位置關係上,本發明實施例符合底閘式(bottom)的結構,但在其他實施例中,也可以是頂閘式的結構。在第八圖的結構,閘極51、閘極線43、共電極線45設置於同一層並位於一基板(未圖示)上;一閘極絕緣層57(見第十一B圖)覆蓋閘極51、閘極線43、共電極線45;資料線41、 源極53、汲極55位於同一層並設置於閘極絕緣層57上;一被動層59(見第十一B圖)覆蓋資料線51、源極53、汲極55;一介電層61(見第十一B圖)覆蓋被動層59;畫素電極39設置於介電層61上。In the vertical positional relationship, the embodiment of the present invention conforms to the bottom structure, but in other embodiments, it may also be a top gate type structure. In the structure of the eighth embodiment, the gate 51, the gate line 43, and the common electrode line 45 are disposed on the same layer and on a substrate (not shown); a gate insulating layer 57 (see FIG. 11B) is covered. Gate 51, gate line 43, common electrode line 45; data line 41, The source 53 and the drain 55 are located on the same layer and disposed on the gate insulating layer 57; a passive layer 59 (see FIG. 11B) covers the data line 51, the source 53 and the drain 55; and a dielectric layer 61. (See FIG. 11B) Covering the passive layer 59; the pixel electrode 39 is disposed on the dielectric layer 61.

上述實施例中,延伸結構49的形狀為鐘型,但在其他實施例中,也可以是其他外型,例如英文字母「H」型、「一」字型或其他幾何形狀。此外,共電極線45的分枝結構47其形狀、數量、所在位置也沒有限制。此外,上述實施例中,兩分枝結構47與兩延伸結構49以共電極線45為鏡射線,對稱設置於該兩畫素內,但於其他實施例,也可以不對稱的設置。In the above embodiment, the shape of the extension structure 49 is a bell shape, but in other embodiments, other shapes may be used, such as an English letter "H" type, a "one" shape or other geometric shapes. Further, the branching structure 47 of the common electrode line 45 is also not limited in shape, number, and position. In addition, in the above embodiment, the two branching structures 47 and the two extending structures 49 are mirror-shaped with the common electrode line 45 symmetrically disposed in the two pixels, but in other embodiments, they may be asymmetrically disposed.

第九圖顯示本發明畫素結構的另一實施例。如第9圖所示,每兩條縱向排列的資料線41與兩條橫向排列的閘極線43交叉包圍定義了兩個畫素,此兩個畫素各具有一畫素電極39並且共用一條共電極線45。其中,於一畫素區域內,共電極線45分別連接複數個,例如兩個分枝結構47,兩個分枝結構47又連接一個延伸結構49,延伸結構49設置於該畫素內,與畫素電極39形成一夾層電容。The ninth diagram shows another embodiment of the pixel structure of the present invention. As shown in FIG. 9, each of the two longitudinally arranged data lines 41 and the two laterally arranged gate lines 43 are surrounded by two pixels, each of which has a pixel electrode 39 and shares a single pixel. Common electrode line 45. Wherein, in the pixel region, the common electrode lines 45 are respectively connected to a plurality of, for example, two branch structures 47, and the two branch structures 47 are connected to an extension structure 49, and the extension structure 49 is disposed in the pixel, and The pixel electrode 39 forms a sandwich capacitor.

第十圖顯示本發明畫素結構的另一實施例。每兩條縱向排列的資料線41與兩條橫向排列的閘極線43交叉包圍定 義了兩個畫素,此兩個畫素各具有一畫素電極39並且共用一條共電極線45。其中,與第八圖實施例不同處在於,於兩畫素區域內,兩分枝結構47與兩延伸結構49並未以共電極線45為鏡射線對稱設置於該兩畫素內,但呈現略為不對稱的結構。The tenth figure shows another embodiment of the pixel structure of the present invention. Each of the two longitudinally arranged data lines 41 intersects with two laterally arranged gate lines 43 Two pixels are defined, each of which has a pixel electrode 39 and shares a common electrode line 45. The difference from the embodiment in the eighth embodiment is that, in the two pixel regions, the two branch structures 47 and the two extension structures 49 are not symmetrically disposed in the two pixels with the common electrode line 45 as a mirror ray, but Slightly asymmetrical structure.

上述第九圖與第十圖實施例的其他元件與其作用關係與第八圖的實施例相同,不再贅述。The other components of the above-described ninth and tenth embodiments are the same as those of the eighth embodiment, and will not be described again.

根據本發明揭露的畫素結構,由於資料線41與共電極線45的重疊面積減少,使得共電極線45與資料線41之間的寄生電容減低,可以避免共電極訊號與資料訊號的失真。此外,本發明實施例所形成的夾層電容並非傳統串聯方式的架構,而是並聯方式的架構,由於這樣的原因,本發明提出的畫素結構進行雷射修補時,將可以改善習知技術於雷射修補後,共電極訊號中斷後不連貫的問題。According to the pixel structure disclosed in the present invention, since the overlapping area of the data line 41 and the common electrode line 45 is reduced, the parasitic capacitance between the common electrode line 45 and the data line 41 is reduced, and the distortion of the common electrode signal and the data signal can be avoided. In addition, the interlayer capacitance formed by the embodiment of the present invention is not a conventional serial connection architecture, but a parallel architecture. For this reason, when the pixel structure proposed by the present invention is laser repaired, the prior art can be improved. After the laser is repaired, the problem of inconsistency after the interruption of the common electrode signal.

第十一A圖至第十一B圖以本發明第八圖畫素結構為例,顯示本發明畫素修補方法的實施例,其中第十一B圖是第十一A圖在B-B’方向的剖面圖。11A to 11B show an embodiment of the pixel repairing method of the present invention by taking the eighth picture element structure of the present invention as an example, wherein the eleventh B picture is the eleventh A picture in the B-B' A cross-sectional view of the direction.

如第十一A圖所示,畫素修補方法首先提供兩條資料線41與兩條閘極線43所包圍定義的兩個畫素,此兩個畫素各具有一畫素電極39並且共用一條共電極線45,其中, 於兩畫素區域內,共電極線45包含兩分枝結構47與兩延伸結構49,共電極線45分別連接兩分枝結構47,兩分枝結構47分別連接兩延伸結構49,兩延伸結構49分別設置於該兩畫素內。之後,當上方的畫素發生畫素電極39與延伸結構49短路67而產生亮點缺陷時,進行雷射修補,以雷射光使得畫素電極39與閘極線43短路69,並以雷射光65(見第十一B圖)切斷63分枝結構47,藉此中斷傳送至此畫素的共電極訊號。As shown in FIG. 11A, the pixel repair method first provides two pixels defined by two data lines 41 and two gate lines 43, each of which has a pixel electrode 39 and is shared. a common electrode line 45, wherein In the two-pixel area, the common electrode line 45 includes two branch structures 47 and two extension structures 49, and the common electrode lines 45 are respectively connected to the two branch structures 47, and the two branch structures 47 are respectively connected to the two extension structures 49, and the two extension structures 49 are respectively disposed in the two pixels. Thereafter, when the upper pixel-generating pixel 39 and the extension structure 49 are short-circuited 67 to cause a bright spot defect, laser repair is performed, and the laser light 39 is short-circuited with the gate electrode 43 by the laser light 69, and the laser light 65 is used. (See Figure 11B) The 63 branching structure 47 is severed, thereby interrupting the common electrode signal transmitted to the pixel.

如第十一B圖所示,由於本發明提供的畫素結構使左右兩畫素共用一條共電極線45,當以雷射光65切斷63共電極線45的左邊畫素的分枝結構47後,並不會影響共電極訊號傳送至右邊的畫素,改善了共電極線45中斷後訊號不連貫的問題。此外,由於資料線41與分枝結構47,或者說被切斷63處的距離已經被隔開至足夠遠的距離,足以避免雷射65切斷63時,共電極線45與資料線41短路造成更嚴重的的亮線缺陷。As shown in FIG. 11B, since the pixel structure provided by the present invention causes the left and right pixels to share one common electrode line 45, when the laser light 65 cuts off the branching structure of the left pixel of the 63 common electrode line 45, 47 After that, the common electrode signal is not transmitted to the pixel on the right side, which improves the problem of inconsistent signal after the interruption of the common electrode line 45. In addition, since the distance between the data line 41 and the branching structure 47, or the cut 63, has been separated by a sufficiently long distance, sufficient to prevent the laser 65 from being cut 63, the common electrode line 45 is shorted to the data line 41. Causes more serious bright line defects.

以上所述僅為本發明之較佳實施例而已,並非用以限定本發明之申請專利範圍;凡其他未脫離發明所揭示之精神下所完成之等效改變或修飾,均應包含在下述之申請專利範圍內。The above is only the preferred embodiment of the present invention, and is not intended to limit the scope of the present invention; all other equivalent changes or modifications which are not departing from the spirit of the invention should be included in the following Within the scope of the patent application.

1‧‧‧閘極線1‧‧‧ gate line

3‧‧‧資料線3‧‧‧Information line

5‧‧‧閘極5‧‧‧ gate

7‧‧‧源極7‧‧‧ source

9‧‧‧汲極9‧‧‧汲polar

11‧‧‧畫素電極11‧‧‧ pixel electrodes

13‧‧‧共電極線13‧‧‧Common electrode line

15‧‧‧短路15‧‧‧ Short circuit

17‧‧‧短路17‧‧‧ Short circuit

19‧‧‧切斷19‧‧‧ cut off

21‧‧‧短路21‧‧‧ Short circuit

23‧‧‧閘極絕緣層23‧‧‧ gate insulation

25‧‧‧被動層25‧‧‧ Passive layer

27‧‧‧介電層27‧‧‧Dielectric layer

29‧‧‧雷射29‧‧‧Laser

39‧‧‧畫素電極39‧‧‧ pixel electrodes

41‧‧‧資料線41‧‧‧Information line

43‧‧‧閘極線43‧‧ ‧ gate line

45‧‧‧共電極線45‧‧‧Common electrode line

47‧‧‧分枝結構47‧‧‧ Branch structure

49‧‧‧延伸結構49‧‧‧Extended structure

51‧‧‧閘極51‧‧‧ gate

53‧‧‧源極53‧‧‧ source

55‧‧‧汲極55‧‧‧汲polar

57‧‧‧閘極絕緣層57‧‧‧ gate insulation

59‧‧‧被動層59‧‧‧ Passive layer

61‧‧‧介電層61‧‧‧ dielectric layer

63‧‧‧切斷63‧‧‧ cut off

65‧‧‧雷射65‧‧‧Laser

67‧‧‧短路67‧‧‧ Short circuit

69‧‧‧短路69‧‧‧ Short circuit

第一圖至第三圖顯示習知的畫素結構;第四圖至第六圖顯示習知的畫素修補方法;第七A圖至第七B圖顯示習知的畫素修補方法與缺失;第八圖至第十圖顯示本發明畫素結構實施例;及第十一A圖與第十一B圖顯示本發明畫素修補方法實施例。The first to third figures show a conventional pixel structure; the fourth to sixth figures show a conventional pixel repair method; and the seventh to seventh B charts show a conventional pixel repair method and missing 8 to 11 show an embodiment of the pixel structure of the present invention; and 11A and 11B show an embodiment of the pixel repairing method of the present invention.

39‧‧‧畫素電極39‧‧‧ pixel electrodes

41‧‧‧資料線41‧‧‧Information line

43‧‧‧閘極線43‧‧ ‧ gate line

45‧‧‧共電極線45‧‧‧Common electrode line

47‧‧‧分枝結構47‧‧‧ Branch structure

49‧‧‧延伸結構49‧‧‧Extended structure

51‧‧‧閘極51‧‧‧ gate

53‧‧‧源極53‧‧‧ source

55‧‧‧汲極55‧‧‧汲polar

Claims (21)

一種畫素結構,包含:兩資料線;兩閘極線;兩畫素,由該兩資料線與該兩閘極線交叉包圍所定義;兩畫素電極,分別設置於該兩畫素內;及一共電極線,包含兩分枝結構與兩延伸結構,該共電極線平行該閘極線,並將該兩資料線與該兩閘極線包圍的區域分為兩個畫素區域,其中每一該畫素區域具有一個該畫素電極,該共電極線並聯該兩分枝結構,該兩分枝結構分別電性連接該兩延伸結構,該兩延伸結構分別設置於該兩個畫素區域的該兩畫素內。 A pixel structure comprising: two data lines; two gate lines; two pixels defined by the intersection of the two data lines and the two gate lines; two pixel electrodes respectively disposed in the two pixels; And a total electrode line comprising a two-branch structure and two extension structures, the common electrode line is parallel to the gate line, and the area surrounded by the two data lines and the two gate lines is divided into two pixel areas, wherein each The pixel region has a pixel electrode, and the common electrode line is connected in parallel with the two branch structures. The two branch structures are electrically connected to the two extension structures respectively, and the two extension structures are respectively disposed on the two pixel regions. The two pixels inside. 如申請專利範圍第1項的結構,其中該兩延伸結構分別為一鐘型結構。 The structure of claim 1, wherein the two extension structures are respectively a bell-shaped structure. 如申請專利範圍第1項的結構,其中該兩延伸結構分別為一英文字母「H」型結構。 For example, in the structure of claim 1, wherein the two extension structures are respectively an English letter "H" type structure. 如申請專利範圍第1項的結構,其中該兩延伸結構分別為一「一」字型結構。 For example, in the structure of claim 1, wherein the two extension structures are respectively a "one" type structure. 如申請專利範圍第1項的結構,其中該兩分枝結構與該兩延伸結構以該共電極線為鏡射線,對稱設置於該兩畫素內。 The structure of claim 1, wherein the two branch structures and the two extension structures are mirror-shaped with the common electrode line, and are symmetrically disposed in the two pixels. 如申請專利範圍第1項的結構,其中每一該兩畫素尚包含:一閘極;一源極;及一汲極,其中該閘極與該閘極線電性連接,該源極與該資料線電性連接,該畫素電極經由一接觸窗與該汲極電性連接,該閘極、該閘極線、該共電極線設置於同一層,該資料線、該源極、該汲極位於同一層。 For example, in the structure of claim 1, each of the two pixels further includes: a gate; a source; and a drain, wherein the gate is electrically connected to the gate line, and the source is The data line is electrically connected, the pixel electrode is electrically connected to the drain via a contact window, the gate, the gate line, and the common electrode line are disposed on the same layer, the data line, the source, the The bungee is on the same floor. 如申請專利範圍第6項的結構,其中上述各元件的垂直位置關係符合一底閘式結構。 The structure of claim 6 wherein the vertical positional relationship of each of the above elements conforms to a bottom gate structure. 如申請專利範圍第6項的結構,尚包含一基板,該閘極、該閘極線、該共電極線設置於該基板上; 一閘極絕緣層,覆蓋該閘極、該閘極線、該共電極線,且該資料線、該源極、該汲極設置於閘極絕緣層上;一被動層覆蓋該資料線、該源極、該汲極;及一介電層覆蓋該被動層,且該畫素電極設置於該介電層上。 The structure of claim 6 further includes a substrate, the gate, the gate line, and the common electrode line are disposed on the substrate; a gate insulating layer covering the gate, the gate line, the common electrode line, and the data line, the source, and the drain are disposed on the gate insulating layer; a passive layer covers the data line, a source, the drain; and a dielectric layer covering the passive layer, and the pixel electrode is disposed on the dielectric layer. 如申請專利範圍第6項的結構,其中上述各元件的垂直位置關係符合一頂閘式結構。 The structure of claim 6 wherein the vertical positional relationship of each of the above elements conforms to a top gate structure. 如申請專利範圍第1項的結構,其中每一該兩分枝結構的所在位置與該資料線的距離足夠避免該分枝結構被切斷時,導致該共電極線與該資料線短路。 For example, in the structure of claim 1, wherein the distance between the position of each of the two branch structures and the data line is sufficient to prevent the branch structure from being cut, the common electrode line is short-circuited with the data line. 一種畫素結構,包含:兩資料線;兩閘極線;兩畫素,由該兩資料線與該兩閘極線交叉包圍所定義;兩畫素電極,分別設置於該兩畫素內;及一共電極線,該共電極線平行該閘極線,並將該兩資料線與該兩閘極線包圍的區域分為兩個畫素區域,其中每一該畫素區域具有一個該畫素電極; 其中,於每一該畫素區域內,該共電極線並聯複數個分枝結構,該複數個分枝結構分別連接一個延伸結構,該延伸結構與該畫素電極形成一夾層電容。 A pixel structure comprising: two data lines; two gate lines; two pixels defined by the intersection of the two data lines and the two gate lines; two pixel electrodes respectively disposed in the two pixels; And a common electrode line, the common electrode line is parallel to the gate line, and the area surrounded by the two data lines and the two gate lines is divided into two pixel areas, wherein each pixel area has one pixel electrode; The common electrode line is connected in parallel with a plurality of branch structures in each of the pixel regions, and the plurality of branch structures are respectively connected to an extension structure, and the extension structure forms a sandwich capacitor with the pixel electrode. 如申請專利範圍第11項的結構,其中該延伸結構為一鐘型結構。 The structure of claim 11, wherein the extension structure is a bell-shaped structure. 如申請專利範圍第11項的結構,其中該延伸結構為一英文字母「H」型結構。 The structure of claim 11, wherein the extension structure is an English letter "H" type structure. 如申請專利範圍第11項的結構,其中該延伸結構為一「一」字型結構。 For example, the structure of claim 11 wherein the extension structure is a "one" type structure. 如申請專利範圍第11項的結構,其中該複數個分枝結構與該延伸結構以該共電極線為鏡射線,對稱設置於該兩畫素內。 The structure of claim 11, wherein the plurality of branching structures and the extending structure are mirror-shaped with the common electrode line, and are symmetrically disposed in the two pixels. 如申請專利範圍第11項的結構,其中該分枝結構的數量為兩個。 For example, the structure of claim 11 wherein the number of the branched structures is two. 如申請專利範圍第11項的結構,其中每一該複數個分枝結構的所在位置與該資料線的距離足夠避免該分枝結構被切斷時,導致該共電極線與該資料線短路。 For example, in the structure of claim 11, wherein the distance between the position of each of the plurality of branch structures and the data line is sufficient to prevent the branch structure from being cut, the common electrode line is short-circuited with the data line. 一種畫素修補方法,包含:提供兩資料線;提供兩閘極線;提供兩畫素,由該兩資料線與該兩閘極線交叉包圍所定義;分別提供兩畫素電極於該兩畫素內;及提供一條共電極線,包含兩分枝結構與兩延伸結構,該共電極線平行該閘極線,並將該兩資料線與該兩閘極線包圍的區域分為兩個畫素區域,其中每一該畫素區域具有一個該畫素電極,該共電極線並聯該兩分枝結構,該兩分枝結構分別連接該兩延伸結構,該兩延伸結構分別設置於該兩個畫素區域的該兩畫素內;及當兩畫素至少其中之一具有缺陷,切斷該具有缺陷畫素的分枝結構,藉此中斷傳送至該缺陷畫素的共電極訊號。 A pixel repairing method comprises: providing two data lines; providing two gate lines; providing two pixels, defined by the intersection of the two data lines and the two gate lines; respectively providing two pixel electrodes for the two paintings And providing a common electrode line comprising a two-branch structure and two extension structures, the common electrode line paralleling the gate line, and dividing the two data lines and the area surrounded by the two gate lines into two paintings a region, wherein each of the pixel regions has a pixel electrode, the common electrode line is connected in parallel with the two branch structures, and the two branch structures are respectively connected to the two extension structures, and the two extension structures are respectively disposed on the two Within the two pixels of the pixel region; and when at least one of the two pixels has a defect, the branching structure having the defective pixel is cut, thereby interrupting the common electrode signal transmitted to the defective pixel. 如申請專利範圍第18項的方法,尚包含將該畫素電極與該閘極線短路的步驟。 The method of claim 18, further comprising the step of shorting the pixel electrode to the gate line. 如申請專利範圍第18項的方法,其中該缺陷畫素包含亮點缺陷。 The method of claim 18, wherein the defective pixel comprises a bright spot defect. 如申請專利範圍第18項的方法,其中每一該兩分枝結構的形成位置與該資料線的距離足夠避免該分枝結構被切斷時,導致該共電極線與該資料線短路。 The method of claim 18, wherein each of the two branch structures is formed at a distance from the data line sufficient to prevent the branch structure from being severed, causing the common electrode line to be shorted to the data line.
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