JP3418684B2 - Active matrix type liquid crystal display - Google Patents

Description

DETAILED DESCRIPTION OF THE INVENTION [0001] The present invention relates to a display pixel electrode.
By applying a drive signal via a switching element
In particular, the present invention relates to a display device that performs
Matrix that realizes high-density display by arranging
Liquid crystal display device and pixel defect repair method thereof
Is what you do. [0002] 2. Description of the Related Art Conventionally, liquid crystal display devices and plasma display devices
Display devices such as a plurality of arranged in a matrix
Pixel electrodes and opposing electrodes arranged opposite to these pixel electrodes
With a display medium (liquid crystal, plasma, etc.) between the two electrodes.
It is interposed. The above display device is selectively used for the pixel electrode.
By applying voltage to the display pattern on the screen.
Formed between the selected pixel electrode and the counter electrode.
The display media optically converts the display data according to the voltage applied to
The above-mentioned display pattern is visualized by being modulated. As a driving method of the pixel electrode, a matrix is used.
Switching elements for each of the pixel electrodes
Connected, and each pixel electrode is driven by a switching element.
So-called active matrix drive system is known
I have. As the above switching element, a TFT (thin film)
Transistor), MIM (metal-insulating-metal) element, etc.
Is generally known. On the other hand, the pixel electrode is
Formed on the same layer as signal lines or scanning lines (bus lines)
Often avoid contact with signal or scan lines.
Is placed. In addition, the provision of a pixel electrode on an insulating film
Therefore, the pixel electrode and the bus line may be formed in different layers.
Has been proposed (Japanese Patent Application Laid-Open No. 61-15625).
etc). In such a configuration, the pixel electrode and the bus line
Since it is formed in a separate layer, the area (aperture ratio) of the pixel electrode is increased.
Can be great. By the way, a liquid using a matrix type substrate
In the case of crystal display devices, wiring caused by manufacturing defects
Disconnection is always a problem. To reduce this disconnection.
Active matrix type liquid crystal display device,
ID'95 DIGESTof TECHNICALP
APERS 4: AMLCDs 4.3; "High-
Aperture and Fault-Tolera
nt PixelStructure for TFT
-LCDs "discloses a structure to duplicate bus lines.
ing. [0006] This structure, as shown in FIG.
Two gate lines 52, 52 'are provided for each pole 51.
And the gate lines 52 and 52 ′ are on both sides of the pixel electrode 51.
Short-circuit lines 54 arranged along the data lines 53
Is short-circuited. The short-circuit wires 54
Formed over the pixel electrode 51 via an insulating layer (not shown).
The overlapping part functions as an auxiliary capacitor
Swelling. In such a configuration, two gate lines
Since the TFT 55 is driven by 52 ・ 52 ′, the game
Even if one of the cable lines 52 and 52 'is broken,
Applying a gate voltage to the TFT 55 via the
Can be maintained. Further, as described above, the pixel electrode 51 is short-circuited.
The wires 54 and 54 overlap with each other in a direction perpendicular to the substrate via the insulating film.
I'm nervous. As a result, light leaks from between the pixels.
In general, a shield formed on the counter electrode side to prevent
Short-circuit lines 54 and 54 also serve as part of the optical pattern.
ing. Here, the pixel electrode and the data line form an insulating film.
The configuration that is overlapped via the intermediary will be described below. [0009] In the configuration shown in FIG.
The peripheral portion on the side is formed by gate lines 52 and 52 and data lines 53
-It is provided so as to overlap with 53. Also shown in FIG.
As shown in FIG.
A quantity electrode (hereinafter referred to as a Cs electrode) 56 is provided.
You. This Cs electrode 56 is used in common with the TFT 55.
The pixel electrode 5 is formed on the gate insulating film 57 to be
The first contact portion 51a is in contact with the first contact portion 51a. The gate insulating film 57 is made of a glass substrate 58.
It is formed so as to cover the auxiliary capacitance line 59 formed thereon.
I have. On both sides of the Cs electrode 56 on the gate insulating film 57,
Lower signal lines 60 are formed, and data is further formed thereon.
Tab lines 53 are formed. Lower layer signal line 60.6
0 and the data lines 53 are covered with an insulating film 61.
Have been. In the above configuration, the pixel electrode 51 and the data line
Since the insulating film 61 is interposed between the
Regardless of the arrangement position of the data lines 53
It can be formed widely. In the configuration shown in FIG.
The configuration is the same as the above configuration, and the Cs electrode 56
It is connected to the drain electrode 62 via the connection line 63.
You. The configuration shown in FIG. 15 and FIG.
56 is arranged on an auxiliary capacitance line 59 common to all the pixels.
Cs on Comm
An on structure is adopted. In the configuration shown in FIG. 18, the Cs electrode 56 is adjacent
Is arranged on the gate line 52 of the target pixel.
Adopt Cs on Gate structure to form quantity
You. In this configuration, the Cs electrode 56 is
It is connected to the contact section 51b. Configuration shown in FIG.
In addition, the Cs electrode 56 is connected to the drain electrode 62 by a connection line.
63 are connected. [0014] SUMMARY OF THE INVENTION High definition liquid crystal display devices
Bus line width shrinks due to the trend toward higher aperture ratios
On the other hand, the increase in bus line intersections
Breaks and leaks at bus line intersections
Tend to be. Such disconnections and leaks occur
And a normal voltage is applied to the pixel electrode connected to the bus line.
Is not applied. Therefore, the part where no voltage is applied
Appears on the display screen as a linear defect. Display element
Is a fatal defect in the device
The display device using is treated as a defective product. like this
When the number of defective products increases, the yield of the display device decreases,
Product costs rise. In addition, a general pixel electrode and a bus line
The above bus line is duplicated in the structure formed in the same layer
When the structure is applied, the pixel electrode is on the same layer as the bus line.
Because it is provided, the pixel electrode cannot be enlarged,
It is difficult to further increase the aperture ratio. In addition,
In order to increase the aperture ratio, the spacing between wires must be reduced.
And it is likely to increase leakage between wires
Become. Further, as shown in FIGS.
In the configuration, the pixel electrode 51 and the data lines 53 are overlapped.
Can be formed. However, the pixel electrode 51
The capacitance between the data line 53 and the
The size cannot be reduced due to the film 61. therefore,
Crosstalk etc. occurs due to the capacity, and the display quality deteriorates
Let me do it. The present invention has been made in view of the above circumstances.
Therefore, while preventing the occurrence of line-like defects,
The purpose is to provide a structure that can easily increase the aperture ratio.
You. [0018] An active mat according to the present invention is provided.
A liquid crystal display device has a plurality of scans provided on a substrate.
A scanning line and a plurality of signals formed so as to be orthogonal to the scanning line.
Signal line and the adjacent scanning line and the adjacent signal line.
A pixel electrode disposed in a region where the
The signal to the pixel electrode by turning on / off by the scanning voltage
Switch that switches the application of the signal voltage through the
Active matrix type liquid crystal display having a switching element
In the device, the signal line is formed in the same layer as the signal line.
And a spare line electrically connected to the signal line.
And the pixel electrode is insulated from the signal line and the spare line.
It is formed on another layer via the edge film, and the pixel electrode
Partially overlap with the neighboring signal line or backup line
And two overlapping areas to be folded.
Are formed to be equal to each other
BeenThe signal line and the spare line have poles for each line.
The signal voltage whose polarity is reversed is applied and
Indicates that each side connected to both sides of one signal line
Connected to alternateIt is characterized by being. Further, the pixel defect repairing method of the present invention
Of the active matrix liquid crystal display device
When a leak failure occurs at the intersection of the inspection line and the signal line,
It is characterized by cutting the signal line on both sides of the scanning line.
You. [0020] [Embodiment 1] The first embodiment of the present invention
An embodiment will be described with reference to FIGS.
It is as follows. Active matrix according to the present embodiment
Liquid crystal display device (hereinafter referred to as a liquid crystal display in each embodiment)
The device includes a plurality of gate lines as shown in FIG.
1, a plurality of data lines 2, a plurality of auxiliary capacitance lines (hereinafter, referred to as
A wiring board having 3...
You. The liquid crystal display device includes a liquid crystal panel including the wiring substrate.
have. This liquid crystal panel is
There is a gap between the counter substrate provided with a common electrode (not shown).
With liquid crystal sealed between them.
You. Gate lines 1,..., Data lines 2,.
Are fixed on a substrate 8 (see FIG. 3) described later.
Are provided in parallel with each other at intervals of. Signal lines and
Are connected to gate lines 1 as scanning lines.
Are arranged orthogonally, and Cs lines 3 are provided in common to all the pixels.
Are arranged in parallel with the gate lines 1. Next door
Surrounded by matching gate line 1.1 and adjacent data line 2.2
The pixel electrode 4 is provided in the region to be covered. On the lower side of the pixel electrode 4 are provided spare lines 5.
Have been. The spare line 5 is located at the center of the pixel electrode 4.
The pixel electrodes 4 are arranged in parallel with the line 2 and each pixel electrode 4 has a pair.
Connected to the data line 2. The spare line 5 is
The same type as the data line 2 with a certain width narrower than the width of the data line 2
It is formed of a metal material. In addition, the spare lines 5 ...
For transparent conductive film such as indium tin oxide (ITO)
May be formed. Near the intersection of gate line 1 and data line 2
Is provided with a TFT 6 as a switching element.
I have. The TFT 6 has a semiconductor layer 6a. This half
The conductor layer 6a has a gate insulating film 9 described later on the gate line 1.
(See FIG. 3).
Connected to the data line 2 and the drain electrode 7. Ma
In the semiconductor layer 6a, an intermediate portion is formed as a channel region.
Have been. The drain electrode 7 is drawn below the pixel electrode 4.
And is connected to the pixel electrode 4. The connection is
The contact portion 4a formed on the pixel electrode 4
I have. The TFT 6 applies an ON voltage (scanning) to the gate line 1.
Voltage) is applied and the data line 2 is marked.
Applying the applied voltage to the pixel electrode 4 to charge the pixel capacitance
It has become. The Cs line 3 is provided between adjacent gate lines 1.1.
Are arranged one by one. Also, shown in FIG. 2 and FIG.
As described above, the Cs line 3 is transparent and insulating like glass.
Is formed on a substrate 8 made of a material having What
The gate line 1 is in the same layer as the Cs line 3 as shown in FIG.
It is provided in. On the Cs line 3, a gate insulating film 9 is interposed.
Two auxiliary capacitance electrodes 10 per pixel (hereinafter referred to as C
s electrode). Also, gate insulation
A spare line 5 is formed between the Cs electrodes 10 on the film 9
And the lower layer data is placed on both sides of the Cs electrodes 10.
Data lines 11 are formed. This lower data line 1
Data lines 2 are formed on the lines 1 and 11. Further, these are covered with an insulating film 12.
The pixel electrode 4 is formed on the insulating film 12.
The pixel electrode 4 has contact portions 4b, 4
b, and the contact portions 4b, 4b
It is in contact with poles 10. The insulating film 12 has
It is formed of a machine material, particularly a resin. Also, insulating film
As the material of No. 12, a material having a low relative dielectric constant is used.
I have. In the above configuration, the Cs electrodes 10
Are arranged on common Cs lines 3... Auxiliary capacity
Represents the Cs wire 3, the Cs electrode 10, and the
Cs on Co formed by the gate insulating film 9
It is a mmon structure. In the present embodiment, as described below,
A configuration other than the configuration may be adopted. For example, in the configuration shown in FIG.
0 and 10 are connected by the drain electrode 7 and the connection line 13.
It is connected. This configuration is also similar to the configuration of FIG.
  Although it has an on Common structure, the drain electrode 7
In that it is connected to the pixel electrode 4 via the Cs electrode 10.
It differs from the configuration of FIG. Further, in the configuration shown in FIG.
A gate for the pixel electrode 4 in which a part of the electrode 10 is adjacent.
It is provided on line 1. The auxiliary capacitance is the gate line 1, C
s electrode 10 and the aforementioned gate sandwiched therebetween
Cs on G formed by the insulating film 9 (see FIG. 3)
ate structure. Here, the wiring board configured as described above
Will be described with reference to FIGS. 3 and 4.
You. First, on the surface of the transparent and insulating substrate 8,
Forming a conductive thin film and patterning the conductive thin film
Thus, a gate line 1 and a Cs line 3 are formed. Substrate 8
Glass substrate is used as the
Other materials may be used as long as they have them. Also, conductive thin film
Is made of a Ta-based metal material,
If necessary, other materials may be used. Next, the gate line 1 and the Cs line 3 are covered.
Insulating thin film and semiconductor thin film (semi-
Conductor layer 6a) and semiconductor-electrode contact material thin film
Next, the semiconductor contact layers 14 are formed. Here, silicon nitride is used as the insulating thin film.
Using amorphous silicon as a semiconductor thin film
N + amorphous silicon as contact material thin film
Is used. However, when forming an insulating thin film,
Materials other than silicon nitride
May be. Subsequently, the transparent conductive thin film and the conductive thin film are overlapped.
By forming it and patterning the conductive thin film,
Data line 2, drain electrode 7, and source electrode 15
To form Then, pattern the transparent conductive thin film
As a result, the lower data line 11 and the lower drain electrode 16
And the lower source electrode 17, the spare line 5, and the Cs electrode 10
Form. The TFT 6 is formed by such patterning.
Made. The TFT 6 is used as a switching element.
Material, structure and manufacturing
The method is not particularly limited. Here, ITO was used as the transparent conductive thin film.
In addition, a Ta-based metal material is used as the conductive thin film. However,
Other conductive materials may be used as these materials. Ma
Data line 2, spare line 5, drain electrode 7 and Cs
The entire electrode 10 can be formed of one type of metal material
And made of a transparent conductive material such as ITO.
Both are possible. In such a case, the lower data line 11
It becomes unnecessary. The transparent conductive thin film and the conductive thin film may be made of any material.
In the case where the auxiliary wire 5 is formed by
Data line 2 and Cs electrode 10 which are indispensable for fabrication
Is performed simultaneously with the formation of Therefore, the conventional display element
As compared with fabrication, the number of processes increases due to the formation of the spare line 5.
There is no addition. It should be noted that the width of the data line 2 depends on the electric driving condition.
It is set to about 8 μm in consideration of the situation. In addition,
The width is set to about 4μm in consideration of the processing accuracy of ITO.
You. Further, an insulating layer serving as the insulating film 12 is formed.
Then, the pixel electrode 4 and the drain electrode 7 are connected to this insulating layer.
Contact hole and pixel electrode 4 for connection to Cs
Form another contact hole for connecting to the electrode 10.
To achieve. Here, the insulating layer is made of photosensitive acrylic resin.
To a thickness of about 3.0 μm. Of this acrylic resin
The relative permittivity is set to 3.5. However, the insulation layer
As long as the material has an insulating property,
Other organic materials may be used. Then, ITO is formed and patterned.
Thereby, the pixel electrode 4 is formed. At this time,
Contact portions 4a and 4b are formed in the contact holes.
It is. Here, the material of the pixel electrode 4 is other than ITO.
A conductive material may be used. In this way, the structure shown in FIGS.
Is manufactured. The matrix display element according to the present embodiment
Is configured as described above, so
It can have excellent features. (1) If the data line 2 is disconnected,
Voltage to the pixel electrode 4 after the occurrence of disconnection due to the reserve line 5
Can be applied. Therefore, line-shaped due to disconnection
Defects can be prevented from occurring. (2) Intersection between gate line 1 and data line 2
Or a leak occurs at the intersection of the gate line 1 and the spare line 5.
The data line 2 or the spare line 5 on both sides of the intersection
And cut with laser light or the like. This allows for intersections
No voltage is applied to data line 2 or spare line 5
And no leakage occurs. (3) Make the spare line 5 narrower than the data line 2
By suppressing the reduction of the aperture ratio of the pixel by forming
Can be. Moreover, the spare wire 5 is made of a transparent conductive material such as ITO.
The light transmitted through the pixel is formed by the auxiliary line 5
The aperture ratio of the pixel without lowering.
No. (4) Forming insulating film 12 with resin
Thus, the data line 2 and the backup line 5 and the pixel electrode 4
The capacity becomes smaller. Is the capacitance low for the dielectric constant of the resin?
The thickness becomes smaller as the resin layer becomes thicker. Therefore, the capacity
Crosstalk can be reduced. [Second Embodiment] A second embodiment of the present invention
The state will be described with reference to FIG. 7 and FIG.
It is as follows. It should be noted that the present embodiment and other implementations thereafter.
In the embodiment, the configuration in the first embodiment is described.
For components that have the same function as components,
And the description thereof is omitted. The liquid crystal display device according to the present embodiment has the structure shown in FIG.
And a wiring board having a wiring structure as shown in FIG.
ing. In both wiring boards, the gate line 1 and the data line
2, the Cs line 3 and the pixel electrode 4 are the same as those of the first embodiment.
It is arranged similarly to the wiring board in the embodiment. In the wiring board shown in FIG.
Cs electrode 21 is arranged via a gate insulating film not shown
And an auxiliary capacitance of Cs on Common structure is formed.
Have been. This Cs electrode 21 is
It is in contact with the pixel electrode 4. Also, in this wiring board,
A spare line 22 is provided instead of the spare line 5 (see FIG. 1).
I have. The auxiliary line 22 is located below the pixel electrode 4.
Arranged between gate line 1 and Cs line 3 in parallel with gate line 1
ing. Although not shown, the spare line 22 is connected to one of the pixel electrodes 4.
Each unit is connected to a pair of gate lines 1. Also,
The storage line 22 has a fixed width smaller than the width of the gate line 1.
It is formed of the same kind of metal material as the wire 1. In addition,
Reserve lines 22 ... such as indium tin oxide (ITO)
It may be formed of a transparent conductive film. In the wiring board shown in FIG.
The Cs electrode 21 is arranged via the gate insulating film.
As a result, an auxiliary capacitance having a Cs on Gate structure is formed.
I have. The Cs electrode 21 is connected to the pixel electrode by the contact portion 4d.
It is in contact with pole 4. The manufacture of the above two wiring boards is performed in the first embodiment.
The steps are performed in the same manner as in the manufacture of the wiring board in the embodiment.
However, instead of omitting the step of forming the spare line 5,
A spare line 22 is formed together with the gate line 1 and the Cs line 3.
Is provided. In that step, for example, a Ta-based
Forming a conductive thin film made of a metallic material,
By patterning, gate line 1, Cs line 3 and
And the auxiliary line 22 is formed. Or a transparent conductive thin film on the substrate
Film (ITO, etc.) and conductive thin film
By patterning the film, the gate lines 1 and C
After forming the s-line 3, the transparent conductive thin film is patterned
Thereby, the spare line 22 is formed. The matrix display element according to the present embodiment
Is configured as described above, so
It can have excellent features. (1) If a break occurs in the gate line 1,
The power supply to the pixel electrode 4 after the disconnection occurs due to the reserve line 22
Pressure can be applied. Therefore, line for disconnection
It is possible to prevent a state defect from occurring. (2) Intersection between gate line 1 and data line 2
Or a leak may occur at the intersection of data line 2 and spare line 22.
The gate line 1 or the spare line 22 at the intersection.
Cut on both sides with laser light or the like. This allows the intersection
Voltage is applied to the gate line 1 or the spare line 22 in the
And leaks no longer occur. (3) Make the spare line 22 narrower than the gate line 1
To prevent a decrease in pixel aperture ratio.
Can be. Moreover, the spare line 22 is made transparent like ITO.
The light that passes through the pixel is reserved by forming it with a conductor.
Since it is not blocked by the line 22, the aperture ratio of the pixel does not decrease.
I'm sorry. (4) Forming insulating film 12 with resin
Between the gate line 1 and the spare line 22 and the pixel electrode 4
Capacity is reduced. The capacitance is low due to the low dielectric constant of the resin.
And it becomes small, so that a resin layer is thick. Therefore, the capacity
The pull-in of the pixel voltage due to this can be reduced. The pull-in of the pixel voltage means that the gate and the drain
When the capacitance (Cgd) between the gate and the pixel (pixel) increases, the game
When the pixel turns off after charging the pixel
Potential is pulled into the gate via Cgd,
This means that the pixel potential decreases. The above-described potential pull-in is common to the pixel electrode.
It becomes a DC component given to the liquid crystal interposed between the electrodes.
You. Since this DC component has an adverse effect on the liquid crystal,
Canceling by optimizing the voltage applied to the electrodes
Will be However, when Cgd is large, the addition of each pixel
Variations in Cgd due to variations in engineering tend to be large
Therefore, the DC component is sufficiently canceled in the liquid crystal panel.
The reliability of the liquid crystal
descend. In the present wiring board, it is necessary to reduce Cgd.
Can improve the reliability of the liquid crystal.
You. [Third Embodiment] A third embodiment of the present invention.
The state will be described with reference to FIGS.
It is as follows. The wiring board of the liquid crystal display device according to the present embodiment
As shown in FIG. 9, the plate has adjacent data lines 2
Two spare lines 31 and 32 are provided between them. Spare line
31 and 32 are metal materials or transparent conductive materials such as ITO
Are formed to have the same width depending on the body.
It is arranged in parallel with the data line 2. There is a spare line 31
To the data line 2 for applying a voltage to the pixel electrodes 4 in the column.
Each of the pixel electrodes 4 is connected. The spare line 32 is
Data lines for applying a voltage to the pixel electrodes 4 in the next column
2 is connected to each of the pixel electrodes 4. The structure of the spare lines 31 and 32 as described above
On the Cs line 3, three Cs electrodes 33
Are provided to avoid the spare lines 31 and 32. In manufacturing the above wiring board, the first
Spare line in the manufacturing process of the wiring board of the embodiment and
Patterning and contact hole for Cs electrode formation
The patterning of the insulating layer for forming the tool is different. In the above wiring board, the pixel electrode 4 and the spare line
31 and between the pixel electrode 4 and the spare line 32
Are equal in capacity. Equipped with such a wiring board
When data is displayed on the liquid crystal display device, the data line 2 is marked.
The polarity of the applied voltage is inverted for each line. For example,
When performing source line inversion, as shown in FIG.
Data lines 2 with adjacent waveforms (sources 1 and 2)
Applied to 2. Also, line inversion and 1H inversion are combined.
FIG. 10 (b) shows the case of performing the combined dot inversion.
Two data with adjacent waveforms (sources 1 and 2)
Applied to lines 2.2. Here, for a certain pixel electrode 4,
The capacitance is Clc (liquid crystal capacitance) + Ccs (auxiliary capacitance Cc
s), the capacity of the data line 2 (the spare line 5) is Csd1.
And the capacitance between the adjacent data line 2 (the spare line 5) is Csd2.
The data line 2 and the adjacent data line at a certain timing
The potential changes from Vs2 to Vs2 are Vs1 and Vs2, respectively. That
Depends on the pixel potential Vd and the capacitance Csd at the timing
The effect is simply expressed by the following equation. ΔVd = Vs1 × Csd1 / (Csd1 +
Clc + Ccs) + Vs2 × Csd2 / (Csd2 + C
lc + Ccs) In the case of line inversion or dot inversion, Vs1 and Vs2
Are opposite in polarity (source 1 in FIGS. 10 (a) and 10 (b)).
(2) Therefore, ΔVd can be reduced.
That is, since Csd1 and Csd2 are equal,
The equation is expressed as follows, and reduces ΔVd most efficiently.
You can do it. ΔVd = (Vs1 + Vs2) × Csd /
(Csd + Clc + Ccs) Thereby, the influence of the above capacity can be reduced,
Providing high-quality liquid crystal display devices with low crosstalk
Can be offered. The crosstalk here
Is the crosstalk appearing in the direction of the data line 2.
You. [Embodiment 4] A fourth embodiment of the present invention.
The state will be described with reference to FIGS. 11 to 13.
It is as follows. The wiring board of the liquid crystal display device according to the present embodiment
As shown in FIG. 11, the plate has multiple
A number of spare lines 41 are provided. The spare line 41 is
Over the adjacent pixel electrodes 4 along the data line 2.
Both ends are the same on the pixel electrode 4 side.
Data line 2. The spare lines 41 are 1
Sides connected on both sides of two data lines 2 are switched every other
Connected to Also, along the gate line 1
One data line between adjacent pixel electrodes 4
In 2, the ends of the two spare lines 41 are closest.
Connected in position. With the structure of the spare line 41 as described above, C
On the s-line 3, two Cs electrodes 10
It is provided to avoid. When manufacturing the above-mentioned wiring board, the third
As in the embodiment, the manufacture of the wiring board of the first embodiment
For forming spare line and Cs electrode in process
Insulating layer for forming and contact hole formation
Turning is different. In the above-described wiring board, the pixel electrode 4 and this pixel
Of the two spare lines 41, 41 arranged below the elementary electrode 4.
Each capacity between them is equal. Such a distribution
When displaying on a liquid crystal display device with a line substrate,
The polarity of the voltage applied to the data line 2 as described above.
Invert every time. This reduces the effect of the above capacity.
High display quality with little crosstalk
Liquid crystal display device can be provided. In the present wiring board, the spare line 41 is
Since the structure is distributed along the data line 2, the wiring
Wet etching performed during the manufacturing process of the substrate
Cleaning defects that occur during liquid processing such as cleaning
It becomes hard. Therefore, the spare lines 31 and 32 run along the data lines.
Compared to the wiring board (see FIG. 9) that is continuously arranged.
The quality of the wiring board can be improved. Further, unlike the third embodiment, a spare
The point where line 41 intersects with gate line 1 and Cs line 3
Can be eliminated. Therefore, at those intersections
Leakage defects can be suppressed. Here, a disconnection failure in the above-mentioned wiring board
Occurs, a voltage is applied to the data line 2 as shown in FIG.
Is applied. For example, when the data line 2 (2A) is
When a disconnection occurs, the voltage applied to the data line 2A is:
Data bypassing the break P by the spare line 41 (41A)
Applied to line 2A. Further, in a certain pixel electrode 4, a data line
2 (2B) and a spare connected to the adjacent data line 2A.
When the line 41 (41B) is disconnected at the disconnection portion Q, the data
The voltage applied to line 2B is supplied by spare line 41 (41C).
It is applied to the data line 2B bypassing the disconnection portion Q. When Leaks Occur in the Wiring Board
As shown in FIG. 13, laser light artificially
Disconnect and correct. At this time, the laser light irradiation is Y
AG (Yttrium-Aluminum-Garne)
t) Laser of 10-9 to 10-6 J / μm2
-Power is used and the wiring board is lit and displayed.
It is. Here, the state in which lighting and display are possible means that the main wiring
The substrate and the counter substrate are bonded together, and the liquid crystal is sealed between them.
This refers to the state of the liquid crystal panel that is configured to be inserted. This
Gate lines 1 and data lines 2 of a liquid crystal panel such as
Signal with a simple waveform to the gate line 1 and the data
Look for a leak between the cable 2 For example, the intersection between the gate line 1 and the data line 2
If a leak occurs in the portion R, the data line 2 is gated.
Irradiate laser beam on both sides of line 1 (cutting part R1, R2)
By cutting. The intersection S of the data line 2 and the Cs line 3
In the case where a leak failure occurs, the data line 2 is connected to the Cs line
Irradiate laser light on both sides (cutting parts S1 and S2) of 3
By cutting. Further, the intersection between the gate line 1 and the spare line 41
When a leak occurs in the portion T, the spare line 41 is gated.
Irradiate laser light on both sides of line 1 (cuts T1 and T2)
By cutting. In the present embodiment, the liquid crystal panel
In this example, the disconnection was performed using laser light.
Before bonding to the board,
If a laser beam is found, a physical or
Can also be broken using chemical means. Also, the wiring base
The same applies to the case where the correction is performed in the process of manufacturing the plate. As described above, the provision of the spare lines 41...
Thus, even if a disconnection failure occurs, the voltage application to the data line 2 is maintained.
And leaks have occurred.
In order to eliminate leak defects by artificial disconnection
Can be. Even if an artificial disconnection is made in this way, the wiring
Because it is duplicated, similar to the case where disconnection failure occurs,
The application of the voltage to the data line 2 can be maintained. In the other embodiments described above,
Each of the wiring boards also has no disconnection similarly to the present embodiment.
Good and leak defects can be overcome. Further, this embodiment and other embodiments
In the wiring board according to the embodiment, the TFT 6 is of an inverted stagger type.
Is a staggered TFT or
The present invention can be applied even when an MIM element is used.
It is. When a staggered TFT is used, the gate
And arrangement of semiconductor layers are different from inverted stagger type TFT
Structure. When the MIM element is used, the above-described arrangement is used.
The gate line 1 is omitted from the line substrate, and the gate line
Instead of 1, the pixel voltage is applied to the opposite substrate (color filter substrate).
A scan line of the same width as the pole is provided. Therefore, this place
In this case, the data formed with the MIM element on the wiring board
The present invention can be applied to a power line. However, in this case as well, in each of the above embodiments,
As described in the above, the pixel electrode and the data line
And must be formed in a separate layer. [0093] As described above, the active mat of the present invention
According to the liquid crystal display device, disconnection failure occurs in the signal line.
In case of failure, make a detour around the disconnection point via the backup line.
Then, a signal voltage is applied to the signal line. Hence, there is
The signal line is broken between the pixel electrode and the next pixel electrode.
Also maintain the application of signal voltage to the next pixel electrode
be able to. As a result, the occurrence of line defects is prevented.
As a result, the rate of non-defective products can be greatly increased.
Also, the broken signal line is
Disconnection on the user side after shipment of
Although there is an example, even in such a case,
You can keep your place. Therefore, this active mat
Rix-type liquid crystal display device aims to reduce product cost
In particular, it has the effect of improving reliability.
I do. Further, the active matrix type liquid of the present invention
In the crystal display device, the pixel electrode is connected to the signal electrode or the spare line.
Formed on an organic insulating film formed to cover
Therefore, the capacitance between the pixel electrode and the signal line or spare line is reduced.
As well as signal lines or backup lines.
The capacitance between the scanning line formed below and the pixel electrode is also small.
It becomes. Therefore, the pixel electrode and the signal line or the spare line
That crosstalk due to capacitance between them can be reduced
In both cases, the pixel voltage due to the capacitance between the scanning line and the pixel electrode
Can be suppressed. Therefore, this book
Active matrix liquid crystal display devices
Display quality can be improved by suppressing the effects of
This has the effect. The pixel defect repair method of the present invention employs the above-described method.
In active matrix liquid crystal displays, scanning lines and
When a leak failure occurs at the intersection with the signal line, the scan line
Is to cut the signal line on both sides. As a result, the signal line at the intersection is
No pressure is applied and no leakage occurs. Also,
Even if the signal line is broken, the voltage applied to the signal line
Pixel defects will not occur.
No. Therefore, the present pixel defect repair method eliminates leak defects.
The effect that display quality can be improved
To play.

BRIEF DESCRIPTION OF THE DRAWINGS FIG. 1 is a plan view showing a configuration of a wiring substrate for an active matrix liquid crystal display device according to a first embodiment of the present invention. FIG. 2 is an enlarged plan view showing a configuration of one pixel region in the wiring board of FIG. 1; FIG. 3 is a cross-sectional view taken along line AA ′ of the wiring board of FIG. 2; FIG. 4 is a cross-sectional view illustrating a configuration of a TFT portion in the wiring board of FIG. 2; FIG. 5 is a plan view showing another configuration in which the spare line is connected to the data line, which is the wiring board according to the first embodiment of the present invention. FIG. 6 is a plan view showing still another configuration of the wiring board according to the first embodiment of the present invention, in which spare lines are connected to data lines. FIG. 7 is a plan view showing a configuration for one pixel region of a wiring substrate for an active matrix liquid crystal display device according to a second embodiment of the present invention. FIG. 8 is a plan view showing another configuration for one pixel region of a wiring substrate for an active matrix liquid crystal display device according to a second embodiment of the present invention. FIG. 9 is a plan view showing a configuration of a wiring substrate for an active matrix liquid crystal display device according to a third embodiment of the present invention. FIG. 10 is a waveform diagram showing voltage waveforms applied to data lines and gate lines when source line inversion and dot inversion are performed in the wiring board of FIG. 9; FIG. 11 is a plan view showing a configuration of a wiring substrate for an active matrix liquid crystal display device according to a fourth embodiment of the present invention. 12 is a plan view showing a state where a disconnection failure occurs in the wiring board of FIG. 11; FIG. 13 is a plan view illustrating correction when a leak failure occurs in the wiring board of FIG. 11; FIG. 14 is a plan view showing a configuration for one pixel region of a conventional wiring substrate for an active matrix type liquid crystal display device in which gate lines are duplicated. FIG. 15 is a plan view showing a configuration of one pixel region of a conventional wiring substrate for an active matrix type liquid crystal display device having a storage capacitance of a Cs on Common structure. 16 is a cross-sectional view of the wiring board of FIG. 15 taken along line BB '; FIG. 17 is a plan view showing another configuration for one pixel region of a conventional wiring substrate for an active matrix type liquid crystal display device having an auxiliary capacitance having a Cs on Common structure. FIG. 18 is a plan view showing a configuration for one pixel region of a conventional wiring substrate for an active matrix liquid crystal display device having a storage capacitor of a Cs on Gate structure. FIG. 19 is a plan view showing another configuration for one pixel region of a conventional wiring substrate for an active matrix type liquid crystal display device having a storage capacitor of a Cs on Gate structure. [Description of Signs] 1 gate line (scan line) 2 data line (signal line) 4 pixel electrode 5 spare line 6 TFT (switching element) 8 substrate 9 gate insulating film (insulating film) 12 insulating film (insulating film, organic insulating) 22) Spare line 31/32 Spare line 41 Spare line S / T / R Intersection R1 / R2 Cut part S1 / S2 Cut part T1 / T2 Cut part

Continuation of the front page (56) References JP-A-6-230422 (JP, A) JP-A-6-274130 (JP, A) JP-A-2-179616 (JP, A) JP-A-62-245222 (JP) , A) (58) Field surveyed (Int. Cl. ⁷ , DB name) G02F 1/1368 G09G 3/36 G02F 1/13 101 G02F 1/1343

Claims (1)

(57) [Claim 1] A plurality of scanning lines provided on a substrate, a plurality of signal lines formed so as to be orthogonal to the scanning lines, and a plurality of scanning lines adjacent to the adjacent scanning lines. A pixel electrode disposed in a region surrounded by the matching signal line; and a scanning voltage applied to the scanning line, which is turned on / off to apply a signal voltage to the pixel electrode via the signal line. An active matrix type liquid crystal display device having a switching element for switching, wherein the signal line includes a spare line formed in the same layer as the signal line and electrically connected to the signal line; The pixel electrode is formed in a separate layer via the signal line and the spare line and an insulating film, and has two overlapping regions that partially overlap the signal line or the spare line adjacent to the periphery of the pixel electrode. The two overlapping areas The signal line and the spare line are applied with a signal voltage whose polarity is inverted for each line, and the spare line is connected to one signal line. An active matrix type liquid crystal display device, characterized in that the two connected sides are connected so as to be switched one by one.