TWI380129B - High etch resistant hardmask composition having antireflective properties, method for forming patterned material layer using the hardmask composition and semiconductor integrated circuit device produced using the method - Google Patents

High etch resistant hardmask composition having antireflective properties, method for forming patterned material layer using the hardmask composition and semiconductor integrated circuit device produced using the method Download PDF

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Publication number
TWI380129B
TWI380129B TW96148919A TW96148919A TWI380129B TW I380129 B TWI380129 B TW I380129B TW 96148919 A TW96148919 A TW 96148919A TW 96148919 A TW96148919 A TW 96148919A TW I380129 B TWI380129 B TW I380129B
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TW
Taiwan
Prior art keywords
hard mask
layer
weight
composition
group
Prior art date
Application number
TW96148919A
Other languages
English (en)
Chinese (zh)
Other versions
TW200834236A (en
Inventor
Oh Chang-Il
Dong Seon Uh
Kyung Hee Hyung
Min Soo Kim
Jin Kuk Lee
Jong Seob Kim
Original Assignee
Cheil Ind Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Cheil Ind Inc filed Critical Cheil Ind Inc
Publication of TW200834236A publication Critical patent/TW200834236A/zh
Application granted granted Critical
Publication of TWI380129B publication Critical patent/TWI380129B/zh

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Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
    • G03F7/091—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers characterised by antireflection means or light filtering or absorbing means, e.g. anti-halation, contrast enhancement
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
    • H01L21/0273—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
    • H01L21/0274—Photolithographic processes
    • H01L21/0276—Photolithographic processes using an anti-reflective coating

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Structural Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Architecture (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Materials For Photolithography (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Drying Of Semiconductors (AREA)
TW96148919A 2006-12-21 2007-12-20 High etch resistant hardmask composition having antireflective properties, method for forming patterned material layer using the hardmask composition and semiconductor integrated circuit device produced using the method TWI380129B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR20060131851A KR100865684B1 (ko) 2006-12-21 2006-12-21 고 내에칭성 반사방지 하드마스크 조성물, 패턴화된 재료형상의　제조방법 및 그 제조방법으로 제조되는 반도체집적회로 디바이스

Publications (2)

Publication Number Publication Date
TW200834236A TW200834236A (en) 2008-08-16
TWI380129B true TWI380129B (en) 2012-12-21

Family

ID=39536445

Family Applications (1)

Application Number Title Priority Date Filing Date
TW96148919A TWI380129B (en) 2006-12-21 2007-12-20 High etch resistant hardmask composition having antireflective properties, method for forming patterned material layer using the hardmask composition and semiconductor integrated circuit device produced using the method

Country Status (3)

Country Link
KR (1) KR100865684B1 (ko)
TW (1) TWI380129B (ko)
WO (1) WO2008075860A1 (ko)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101288573B1 (ko) * 2009-08-03 2013-07-22 제일모직주식회사 칼릭스 알렌이 함유된 고 내에칭성 반사방지 하드마스크 조성물, 이를 이용한 패턴화된 재료 형상의　제조방법
KR101344794B1 (ko) 2009-12-31 2014-01-16 제일모직주식회사 레지스트 하층막용 방향족 고리 함유 중합체　및　이를 포함하는 레지스트 하층막 조성물
KR101777687B1 (ko) * 2016-10-13 2017-09-12 영창케미칼 주식회사 고내에치성 스핀 온 카본 하드마스크 조성물 및 이를 이용한 패턴화 방법

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100552914B1 (ko) * 1998-07-10 2006-06-28 제일모직주식회사 칼러레지스트수지조성물
KR100557606B1 (ko) * 1999-08-31 2006-03-10 주식회사 하이닉스반도체 유기 난반사 방지용 중합체
KR100520186B1 (ko) * 2000-06-21 2005-10-10 주식회사 하이닉스반도체 부분적으로 가교화된 2층 포토레지스트용 중합체
TWI278496B (en) * 2000-11-14 2007-04-11 Jsr Corp Anti-reflection coating forming composition
KR100519516B1 (ko) * 2002-11-25 2005-10-07 주식회사 하이닉스반도체 유기 반사방지막 중합체, 이의 제조 방법과 상기 중합체를포함하는 유기 반사 방지막 조성물
JP3767552B2 (ja) * 2002-12-26 2006-04-19 Ｊｓｒ株式会社 感放射線性組成物、ブラックマトリクス、カラーフィルタおよびカラー液晶表示装置
KR100570209B1 (ko) * 2003-10-15 2006-04-12 주식회사 하이닉스반도체 유기 반사방지막용 광 흡수제 중합체 및 이의 제조 방법과상기 중합체를 포함하는 유기 반사 방지막 조성물
KR100655064B1 (ko) * 2005-05-27 2006-12-06 제일모직주식회사 반사방지성을 갖는 하드마스크 조성물

Also Published As

Publication number Publication date
TW200834236A (en) 2008-08-16
KR20080057927A (ko) 2008-06-25
KR100865684B1 (ko) 2008-10-29
WO2008075860A1 (en) 2008-06-26

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