TWI378841B - - Google Patents

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TWI378841B
TWI378841B TW099105474A TW99105474A TWI378841B TW I378841 B TWI378841 B TW I378841B TW 099105474 A TW099105474 A TW 099105474A TW 99105474 A TW99105474 A TW 99105474A TW I378841 B TWI378841 B TW I378841B
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Taiwan
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metal
mass
metal particles
particles
particle
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TW099105474A
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Chinese (zh)
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TW201038349A (en
Inventor
Tomonori Kiyama
Norihito Tanaka
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Asahi Kasei E Materials Corp
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    • BPERFORMING OPERATIONS; TRANSPORTING
    • B23MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23KSOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K35/00Rods, electrodes, materials, or media, for use in soldering, welding, or cutting
    • B23K35/22Rods, electrodes, materials, or media, for use in soldering, welding, or cutting characterised by the composition or nature of the material
    • CCHEMISTRY; METALLURGY
    • C22METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22CALLOYS
    • C22C9/00Alloys based on copper
    • C22C9/02Alloys based on copper with tin as the next major constituent
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B23MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23KSOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K35/00Rods, electrodes, materials, or media, for use in soldering, welding, or cutting
    • B23K35/02Rods, electrodes, materials, or media, for use in soldering, welding, or cutting characterised by mechanical features, e.g. shape
    • B23K35/0222Rods, electrodes, materials, or media, for use in soldering, welding, or cutting characterised by mechanical features, e.g. shape for use in soldering, brazing
    • B23K35/0244Powders, particles or spheres; Preforms made therefrom
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B23MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23KSOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K35/00Rods, electrodes, materials, or media, for use in soldering, welding, or cutting
    • B23K35/22Rods, electrodes, materials, or media, for use in soldering, welding, or cutting characterised by the composition or nature of the material
    • B23K35/24Selection of soldering or welding materials proper
    • B23K35/26Selection of soldering or welding materials proper with the principal constituent melting at less than 400 degrees C
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B23MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23KSOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K35/00Rods, electrodes, materials, or media, for use in soldering, welding, or cutting
    • B23K35/22Rods, electrodes, materials, or media, for use in soldering, welding, or cutting characterised by the composition or nature of the material
    • B23K35/24Selection of soldering or welding materials proper
    • B23K35/26Selection of soldering or welding materials proper with the principal constituent melting at less than 400 degrees C
    • B23K35/262Sn as the principal constituent
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B23MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23KSOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K35/00Rods, electrodes, materials, or media, for use in soldering, welding, or cutting
    • B23K35/22Rods, electrodes, materials, or media, for use in soldering, welding, or cutting characterised by the composition or nature of the material
    • B23K35/24Selection of soldering or welding materials proper
    • B23K35/26Selection of soldering or welding materials proper with the principal constituent melting at less than 400 degrees C
    • B23K35/264Bi as the principal constituent
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B23MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23KSOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K35/00Rods, electrodes, materials, or media, for use in soldering, welding, or cutting
    • B23K35/22Rods, electrodes, materials, or media, for use in soldering, welding, or cutting characterised by the composition or nature of the material
    • B23K35/24Selection of soldering or welding materials proper
    • B23K35/30Selection of soldering or welding materials proper with the principal constituent melting at less than 1550 degrees C
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B23MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23KSOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K35/00Rods, electrodes, materials, or media, for use in soldering, welding, or cutting
    • B23K35/22Rods, electrodes, materials, or media, for use in soldering, welding, or cutting characterised by the composition or nature of the material
    • B23K35/24Selection of soldering or welding materials proper
    • B23K35/30Selection of soldering or welding materials proper with the principal constituent melting at less than 1550 degrees C
    • B23K35/302Cu as the principal constituent
    • CCHEMISTRY; METALLURGY
    • C22METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22CALLOYS
    • C22C12/00Alloys based on antimony or bismuth
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00Apparatus or processes for manufacturing printed circuits
    • H05K3/30Assembling printed circuits with electric components, e.g. with resistor
    • H05K3/32Assembling printed circuits with electric components, e.g. with resistor electrically connecting electric components or wires to printed circuits
    • H05K3/34Assembling printed circuits with electric components, e.g. with resistor electrically connecting electric components or wires to printed circuits by soldering
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00Apparatus or processes for manufacturing printed circuits
    • H05K3/30Assembling printed circuits with electric components, e.g. with resistor
    • H05K3/32Assembling printed circuits with electric components, e.g. with resistor electrically connecting electric components or wires to printed circuits
    • H05K3/34Assembling printed circuits with electric components, e.g. with resistor electrically connecting electric components or wires to printed circuits by soldering
    • H05K3/3457Solder materials or compositions; Methods of application thereof
    • H05K3/3485Applying solder paste, slurry or powder
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B23MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23KSOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K2101/00Articles made by soldering, welding or cutting
    • B23K2101/36Electric or electronic devices
    • B23K2101/40Semiconductor devices
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K2201/00Indexing scheme relating to printed circuits covered by H05K1/00
    • H05K2201/02Fillers; Particles; Fibers; Reinforcement materials
    • H05K2201/0203Fillers and particles
    • H05K2201/0263Details about a collection of particles
    • H05K2201/0272Mixed conductive particles, i.e. using different conductive particles, e.g. differing in shape

Landscapes

  • Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Manufacturing & Machinery (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Electric Connection Of Electric Components To Printed Circuits (AREA)
  • Powder Metallurgy (AREA)

Description

1378841 六、發明說明: 【發明所屬之技術領域】 本發明係關於一種可使用於各種電子零件之連接及通孔 填充等之金屬填料,以及含有該金屬填料之無鉛焊劑,特 別為低溫連接用無鉛焊劑》本發明還關於一種使用該無鉛 焊劑所得之連接構造體、及具有該連接構造體與基板之零 件搭載基板。1378841 VI. Description of the Invention: [Technical Field] The present invention relates to a metal filler which can be used for connection and filling of various electronic parts, and a lead-free solder containing the same, particularly for lead-free solder for low temperature connection Flux" The present invention also relates to a connection structure obtained by using the lead-free solder, and a component mounting substrate having the connection structure and the substrate.

【先前技術】 先前,作為回流熱處理中使用之焊劑,迄今一般係使用 熔點為183^之Sn-37Pb共晶焊劑。另,作為在要求高耐熱 性之電子零件内部等使用之高溫焊劑,廣泛使用的是固相 線27〇t及液相線305t: iSn_9〇pb高溫焊劑。 但,近年來如Εϋ之環境規定(WEEE、R〇HS指令)所示, Pb之有害性成為問題。由此,從防止環境污染之觀點,焊 劑之無紐化急速進展。如此狀況中,目前作為^_37抑共 晶焊劑之代㈣,溶點22()〇c左右含之Sn3物_〇 5Cu之無 氣焊劑較有代表性。作為該無錯焊劑之回流熱處理條件, 峰值溫度一般在240t至260t左右之溫度範圍。 述熔』220 C左右之含sn-3.〇Ag-〇.5Cu之無鉛焊劑與 37Pb共曰曰焊劑相比,由於合金之熔點高,因此回流熱 處條件亦隻待更為高溫。近來,在擔心化石燃料括竭、 :球暖化等問題之際,為人所盼望的是藉由使回流熱處理 又低皿化’而確立節能製程、及二氧化碳低排放製程。 另,亦為人所期待的是該回流熱處理溫度之低溫化可抑制 146300.doc / 叶丄 ^、電子設備及基板材料之熱損傷,以及可使用之基板 P之選擇幅度較為寬廣。目前,作為可以低溫炫融接合 無雜焊劑材料之代表性例子,可舉Asn_58Bi共晶焊 二=二rnt)、In(炫點15rc)、Sn 52in合金焊劑(炼點 )等(參照專利文獻丨及…❻,該等焊劑材料之炼點 焊劑接合後,當再次成為熔點以上溫度時,會有 再炼融之問題。 ▲又’以手機為代表之電子設備之小型化、輕量化、及高 力此化之趨勢驚人,追隨於此,高密度安裝技術亦持續急 逮地進步。已開發出將零件内藏於基板中、或將複數: LS:形成一個封裝體等之供有效利用有限容積之多種安裝 技術。但另一方面,高密度化愈進展,納入基板内部或封 裝體内部之零件之焊劑連接部在後步驟中接受熱處理之次 數愈多。因此’焊劑於後步驟中再炼融,&零件與密封樹 脂之間隙流出,而在零件電極間等產生短路,&一問題正 曰ϋ顯著化。 因此,納入基板内部或封裝體内部之零件之連接中,期 盼的是即使在後步驟接受複數次熱處理亦不再熔融之# 焊劑材料。 發明人等曾提案-種高耐熱性焊㈣料,在無料劑之 回流熱處理條件,例如峰值溫度246t下可熔融接合,且 接。後在相同熱處理條件τ不炫融(專利文獻3卜含於該焊 劑材料之金屬粒子係第1金屬粒子與比該第1金屬粒子低熔 點之第2金屬粒子之混合體。專利文獻3之技術中,使用〜 146300. doc ^78841 作為第2金屬粒子’將該焊劑材料以Sn之嫁點(232。〇以 上,例如246t進行回流熱處理時,於熔融之第2金屬粒子 與第1金屬粒子間金屬之擴散進行,而形成耐熱性優良之 接合部M旦’考慮到節能及二氧化碳低排放之需求,及對 封熱性低之基板㈣及電子設備之應用之情形,期望可以 更低溫度接合’且接合後不會在無鉛焊劑之回流熱處理條 件下再炼融之材料。[Prior Art] Conventionally, as a flux used in reflow heat treatment, a Sn-37Pb eutectic solder having a melting point of 183 Å has been conventionally used. Further, as a high-temperature flux used in an electronic component requiring high heat resistance, a solid phase wire 27〇t and a liquidus line 305t are widely used: iSn_9〇pb high-temperature flux. However, in recent years, as shown by the environmental regulations (WEEE, R〇HS Directive), the harmfulness of Pb has become a problem. As a result, from the viewpoint of preventing environmental pollution, the flux has not progressed rapidly. In such a situation, as a generation of ^_37 eutectic solder (4), the gas-free flux of Sn3__5Cu contained in the vicinity of the melting point 22 () 〇c is more representative. As the reflow heat treatment condition of the error-free flux, the peak temperature is generally in the temperature range of about 240t to 260t. Compared with the 37Pb ytterbium flux, the lead-free solder containing Sn-3.〇Ag-〇.5Cu is about 220 Cb. Because of the high melting point of the alloy, the reflow heat conditions are only required to be higher. Recently, when there is concern about problems such as fossil fuel exhaustion and ball warming, it is expected that the energy-saving process and the low-carbon dioxide emission process will be established by making the reflow heat treatment low. In addition, it is expected that the low temperature of the reflow heat treatment temperature can suppress the thermal damage of the 146300.doc / leaf 丄 ^, electronic equipment and substrate materials, and the selection range of the substrate P that can be used is relatively wide. At present, as a representative example of a non-hybrid solder material which can be joined at a low temperature, there are Asn_58Bi eutectic solder 2 = two rnt), In (hyun 15rc), Sn 52in alloy solder (refining point), etc. (refer to the patent document 丨And ❻, after the welding of the flux materials, the refining of the flux material will cause re-melting when it is again at a temperature higher than the melting point. ▲In addition, the electronic device represented by the mobile phone is miniaturized, lightweight, and high. The trend of this trend is staggering. Following this, high-density mounting technology has continued to progress. It has been developed to store parts in the substrate, or to make a plural: LS: form a package, etc. for efficient use of limited volume. A variety of mounting techniques. On the other hand, the higher the density, the more the solder joints that are incorporated into the interior of the substrate or the inside of the package are subjected to heat treatment in the subsequent step. Therefore, the flux is re-smelted in the subsequent step. , & the gap between the part and the sealing resin flows out, and a short circuit occurs between the electrode of the part, etc., and a problem is becoming significant. Therefore, the part incorporated into the inside of the substrate or inside the package is connected. Among them, it is expected that the flux material will not be melted even if it is subjected to a plurality of heat treatments in the subsequent step. The inventors have proposed a kind of high heat-resistant solder (four) material, under the reflow heat treatment condition of the no-material agent, for example, the peak temperature of 246t. It can be melt-bonded and joined, and then turbulent under the same heat treatment condition τ (Patent Document 3 contains a mixture of the first metal particles of the metal particles contained in the flux material and the second metal particles having a lower melting point than the first metal particles. In the technique of Patent Document 3, ~ 146300. doc ^78841 is used as the second metal particle. The flux material is a second metal which is melted when it is subjected to reflow heat treatment at 232. The diffusion of the metal between the particles and the first metal particles is carried out, and the joint portion M having excellent heat resistance is formed to take into consideration the demand for energy saving and low carbon dioxide emission, and the application of the substrate (4) having low heat sealing property and electronic equipment. A material that can be joined at a lower temperature and does not re-melt under the reflow heat treatment conditions of lead-free solder after bonding.

因此,本發明者等提案一種焊劑材料,可在峰值溫度 149 C以上低溫熔融接合,且接合後在26(Γ(:之熱條件下具 有耐熱性(專利文獻4)。含於該焯劑材料之導電性填料,係 第1金屬粒子,及比該第丨金屬粒子熔點高之第2金屬粒子 之混合體。 另,此外作為含複數種金屬粒子,且可以低溫接合之焊 劑膏,提案有使用Cu粉末與Sn_Bi類粉末之混合體之焊劑 膏(參照專利文獻5 )。 [先前技術文獻] [專利文獻] [專利文獻1]曰本特開2001-334386號公報 [專利文獻2]曰本特開平ιι_239866號公報 [專利文獻3]國際公開第2006/109573號手冊 [專利文獻4]曰本特開2008-183582號公報 [專利文獻5]曰本特開2008-200718號公報 【發明内容】 [發明所欲解決之問題]Therefore, the inventors of the present invention have proposed a flux material which can be melt-bonded at a low temperature of 149 C or higher at a peak temperature, and has heat resistance at 26 (after heat bonding (Patent Document 4). The conductive filler is a mixture of the first metal particles and the second metal particles having a higher melting point than the second metal particles. Further, as a flux paste containing a plurality of metal particles and capable of low-temperature bonding, it is proposed to use A flux paste of a mixture of a Cu powder and a Sn-Bi powder (see Patent Document 5). [Prior Art Document] [Patent Document] [Patent Document 1] JP-A-2001-334386 [Patent Document 2] [Patent Document 3] International Publication No. 2006/109573 [Patent Document 4] JP-A-2008-183582 (Patent Document 5) JP-A-2008-200718 (Invention) [ The problem that the invention wants to solve]

14630〇.d〇Q 1378841 但,專利文獻4所記載之技術中,接人 丧口後特别是室溫下 之接合強度有改善之餘地。另,專利文赴 』又獻4所記載之技術 中’由於對第1金屬粒子使用In、Ag等离 一 彳貝金屬,原料成 本高且合金組成複雜,因此有製造成本高之問題。一 面’專利文獻5所記載之技術中,Cu粉末易於氧化方 若吸濕則更強固凝集,因此保存安定性有問題。另:利 文獻4及5所記載之技術中,接合後特別是室溫下之接合強 度有改善餘地。 本發明係鑑於上述問題而完成者,其目的係提供—種金 屬填料,可在比Sn-37Pb共晶焊劑之回流熱處理條件更低 溫之條件下(例如峰值溫度為16〇。〇熔融接合可在接合後 提供於室溫下之良好接合強度。€,本發明之目的係:提 供含該金屬填料之無鉛焊劑、使用該無鉛焊劑所得之連接 構造體、及具有該連接構造體與基板之零件搭載基板。 [解決.問題之技術手段] [1]種包含第1金屬粒子與第2金屬粒子之混合體之金 屬填料, 該第1金屬粒子係含有作為主成份之以最高質量比例存 在之7L素Cu,且進而含有化及以之以合金粒子, 該第2金屬粒子係包含則4〇〜7〇質量%,及選自八吕、14630〇.d〇Q 1378841 However, in the technique described in Patent Document 4, there is room for improvement in the joint strength at room temperature after the mouth is removed. In addition, the patent document goes to "Technology of 4". In the use of In, Ag, etc., a mussel metal for the first metal particles, the material cost is high and the alloy composition is complicated, so there is a problem that the manufacturing cost is high. In the technique described in Patent Document 5, the Cu powder is easily oxidized, and if it is hygroscopic, it is more strongly coagulated, and thus the storage stability is problematic. Further, in the techniques described in the documents 4 and 5, there is room for improvement in joint strength at room temperature after joining. The present invention has been made in view of the above problems, and an object thereof is to provide a metal filler which can be cooled at a lower temperature than a reflow heat treatment condition of a Sn-37Pb eutectic solder (for example, a peak temperature of 16 Å. The bonding strength is good at room temperature after bonding. The object of the present invention is to provide a lead-free solder containing the metal filler, a connection structure obtained by using the lead-free solder, and a component having the connection structure and the substrate. [Means for Solving the Problem] [1] A metal filler comprising a mixture of a first metal particle and a second metal particle, the first metal particle containing 7L of the highest mass ratio as a main component Cu, and further comprising an alloy particle, wherein the second metal particle contains 4% to 7〇% by mass, and is selected from the group consisting of

Cu化及Sn群中1種以上之金屬3〇〜60質量%之Bi合金粒 子, 且該第2金屬粒子之量相對該第】金屬粒子1〇〇質量份為 40〜300質量份9 146300.doc 1378841 [2] 如上述[1]記載之金屬填料,其中上述第2金屬粒子含 有Sn。 [3] 如上述⑴或[2]記載之金屬填料,其中上述^金屬粒 .子及上述第2金屬粒子之平均粒徑均在5〜25 之範圍。 [4] 如上述[1]〜[3]中任一項記載之金屬填料,其中上述 第1金屬粒子進而含有選自Ag及則中丨種以上之金屬。 [5] 如上述[1]〜[4]中任一項記載之金屬填料其中上述 • 第1金屬粒子包含Ag 5〜15質量%、Bi 2〜8質量%、cu 49〜81質量%、In 2〜8質量%、及Sn 1〇〜2〇f量0/〇, 該第1金屬粒子在差示掃描熱量測定(DSC)下,具有於 230〜30(TC範圍内觀察到之至少一個發熱峰,及於 480〜530°C範圍内觀測到之至少一個吸熱峰。 [6] —種無鉛焊劑,其含有上述⑴〜[5]中任一項記載之 金屬填料。 [7] —種連接構造體,其具有第丨電子零件、第2電子零 籲件’以及接合該第1電子零件與第2電子零件之焊劑接合 部,該焊劑接合部係藉由將上述[6]記載之無敍坪劑進行回 流熱處理而形成。 ' m-種零件搭載基板,其具有基板,及搭載於該基板 上之上述[7]記載之連接構造體。 [發明之效果] 本發明之金屬填料及含該金屬填料之無鉛焊劑,可在比 例如Sn-37Pb共晶焊劑之回流熱處理條件低溫之條件下(例 如峰值度160 C以上)熔融接合,接合後即使在後步驟接 146300.doc 1378841 受複數次熱處理,焯兩丨鱼拉 斗4連接邛亦不會再熔融。藉此,根據 本發明,可獲得防止 牡令1干屬極間產生之焊劑再熔融所 造成之短路之效果。2 ^ 另,本發明之金屬填料及含有該金屬 填料之無錯谭劑可在接人德接I & — 』仕接^後捻供於室溫下之良好接合強 度。 【實施方式】 <金屬填料> 本發明之金屬填料係包含第】金屬粒子與第2金屬粒子之 ^體之金屬填料’該第1金屬粒子含有作為主成份之以 最尚質量比例存在$ &妄、 之疋素Cu(銅),且進而含有In(銦)及 =(錫)之Cu合金粒子’第2金屬粒子係包含丑㈣4㈣質 里%及選自由Ag(銀)、Cu(銅)' In(鋼)及Sn⑷所組成的 群之1種以上之金屬3〇〜6〇質量%之出合金粒子,並且第2 金屬粒子之量相對第1今屬4 Θ I屬粒子100質罝份為40〜3 00質量 份0 本發明中,藉由上粒成之第丨金屬粒子及第2金屬粒子 之組合’第1金屬粒子之熔點設定成比第2金屬粒子之熔點 高。藉此,以回流熱處理,熔點比第丨金屬粒子低之第2金 屬粒子炼融’以金屬粒子與溶融之第2金屬粒子間因熱擴 :而產生合金化反應’形成比第2金屬粒子之熔點高之穩 定合金相。典型實施態樣中,使用本發明之無料劑時之 回流熱處理溫度下,第1金屬粒子不熔融。藉此,含本發 明之金屬填料之無錯焊劑可在低溫條件下(典型為比^ 37Pb共晶焊劑之回流熱處理條件低溫之條件)熔融接合, 146300.doc 丄j/8841 且溶融接合後’具有在熱處理下不再熔融之效果。可低溫 炫融接合,可使在節能製程及二氧化碳低排放製程下之使 用成為可能’且在可抑制應用之電氣、電子設備及基板材 • 料等熱損傷之點上有利。 •本發明藉由上述組成之第1金屬粒子及第2金屬粒子之組 D ’可避免使用·例如Cu粉末時產生之因吸濕而凝集之問 題。另,本發明中,具有第i金屬粒子以Cu為主成份且 镰 M至屬粒子含有多量B i之組成。藉此,可提供在低溫下 可溶融接合’且接合後具有室溫下之良好接合強度,並且 可降低In、Ag等高價金屬之使用量的金屬填料。 [第1金屬粒子] 第1金屬係以Cu為主成份。即,構成第1金屬粒子之元素 中Cu之質量比例最高。第1金屬粒子除Cu之外,進而含有 In及Sn。藉此,第!金屬粒子可形成準穩定合金相。該準 穩定合金相之形成可促進第丨金屬粒子與第2金屬粒子之合 _ 金化,因此低溫下之溶融接合時可賦貞良好之接合強度。 由較好地實現因與第2金屬粒子之熱擴散而合金化之觀 點’第1金屬粒子中除TCu、InASn以外,以進而含有選 自Ag及Bi中之1種以上金屬較佳。 較佳態樣中,第1金屬粒子包含Ag 5〜15質量。/。、出2〜8 質量。/〇、Cu 49〜81質量%、In 2〜8f量% '及Sn 1〇〜2〇質量 %。再者,此時亦可含有不可避免之雜質。 較佳態樣中,第!金屬粒子在差示掃描熱量測定(DM) 中,具有於230〜300t範圍内觀察到之至少—個發熱峰, J46300.doc 1378841 及於480~530°C範圍内觀測到至少一個吸熱峰。在 230〜300°C範圍内觀察到之發熱峰,表示第!金屬粒子形成 準穩定合金相,在480〜530°C範圍内觀測到之吸熱峰,表 示第1金屬粒子之熔點。再者,本說明書所記載之熔點, 表示以差示掃描熱量測定(DSC)解析之固相線溫度。再 者,上述差不掃描熱量測定,典型為在氮氛圍下,以升溫 速度l〇°C/分之條件,在40~58(rc之測定範圍下實施。 更佳態樣中,第1金屬粒子包含Ag 5〜15質量%、則2〜8 質量。/。、Cu 49〜81質量%、In 2〜8質量%、及Sn 1〇〜2〇質量 %,且該第1金屬粒子在差示掃描熱量測定(Dsc)中,具有 於230〜300t範圍内觀察到之至少—個發熱峰,及於 480〜530°C範圍内觀測到之至少一個吸熱峰。 第1金屬粒子之平均徑在2〜3〇 μιη範圍較佳。第】金屬粒 子之平均粒徑為2 μηι以上時,粒子之比表面積變小。因 此’自本發明之金屬填料,例如使用後述之助谭劑形成焊 劑膏時,第1金屬粒子與助焊劑之接觸面 焊劑膏之壽命變長之優點。再者,第i金屬粒子之平 徑為2以上時,回流熱處理中,可減少在源自助焊劑之 金屬填料之還原反應(即金屬填料粒子之氧化膜除去)所產 生之出氣,可降低產生於焊劑連接内部之空隙。另,由详 劑膏之枯著力之觀點,第】金屬粒子之平均徑在%㈣以下 較佳。粒子尺寸過大時,粒子間之間隙變大,因此容易損 =劑膏之枯著力,從搭载谭劑接合之零件至回流熱處理 束之期間,該零件容易脫離。第1金屬粒子之平均粒徑 146300.doc 1378841 在5〜25 μιη範圍更佳。 再者,本說明書中之平均粒徑,係以雷射繞射式粒子徑 分佈測定裝置所測定之值。 • [第2金屬粒子] • 第2金屬粒子包含Bi 40〜70質量%,及選自Ag、cu、In、 及Sn中之1種以上之金屬30〜60質量。/〇。再者,此時亦可含 有不可避免之雜質》第2金屬粒子藉由上述組成,可在回 φ 流熱處理中熔融,良好地實現於第1金屬粒子與熔融之第2 金屬粒子間之導因於熱擴散之合金化。 • 第2金屬粒子中Bi之含有量,從可在室溫下熔融接合, 且接合後獲得室溫下良好之接合強度之觀點觀之,係^4〇 質量。/。以上70質量%以下。上述含有量較佳為5〇〜6〇質量 %。Cu alloy and one or more kinds of metals in the Sn group are from 3 to 60% by mass of the Bi alloy particles, and the amount of the second metal particles is from 40 to 300 parts by mass relative to the first metal particles of from 1 to 146,300. The metal filler according to the above [1], wherein the second metal particles contain Sn. [3] The metal filler according to the above (1) or [2] wherein the average particle diameter of the metal particles and the second metal particles are in the range of 5 to 25. [4] The metal filler according to any one of the above [1], wherein the first metal particles further comprise a metal selected from the group consisting of Ag and the above. [5] The metal filler according to any one of the above [1] to [4] wherein the first metal particle contains Ag 5 to 15% by mass, Bi 2 to 8 mass%, cu 49 to 81 mass%, and In 2 to 8 mass%, and Sn 1〇~2〇f amount 0/〇, the first metal particle has a temperature of 230 to 30 (differential heat observed in the range of TC) under differential scanning calorimetry (DSC) The peak, and at least one endothermic peak observed in the range of 480 to 530 ° C. [6] A lead-free solder comprising the metal filler according to any one of the above (1) to [5]. [7] a structure including a second electronic component, a second electronic zero-receiving member, and a flux bonding portion for bonding the first electronic component and the second electronic component, wherein the solder bonding portion is described in the above [6] The substrate is formed by a reflow heat treatment. The m-type component mounting substrate has a substrate and the connection structure described in the above [7] mounted on the substrate. [Effect of the Invention] The metal filler of the present invention and the like A lead-free solder of a metal filler which can be used at a low temperature than a reflow heat treatment condition of, for example, a Sn-37Pb eutectic solder (For example, the peak degree is 160 C or more), the fusion bonding is performed, and even if it is subjected to a plurality of heat treatments after the joining in the subsequent step, the two squid buckets 4 are not melted again. The effect of preventing the short circuit caused by the remelting of the flux generated by the poles of the genus 1 is obtained. 2 ^ In addition, the metal filler of the present invention and the error-free tamping agent containing the metal filler can be connected to I & [Embodiment] <Metal filler> The metal filler of the present invention includes a metal filler of a metal particle and a second metal particle. The first metal particle contains, as a main component, a Cu alloy particle of the sum of the mass of the bismuth, Cu (copper), and further contains In (indium) and = (tin), and the second metal particle system Including ugly (four) 4 (four) mass % and one or more metals selected from the group consisting of Ag (silver), Cu (copper) 'In (steel), and Sn (4), 3 〇 to 6 〇 mass% of the alloy particles, and the second The amount of metal particles is relative to the first genus 4 Θ I genus 100 罝 罝 4 0 to 30,000 parts by mass. In the present invention, the melting point of the first metal particles by the combination of the second metal particles and the second metal particles is set to be higher than the melting point of the second metal particles. Reflow heat treatment, melting of the second metal particles having a lower melting point than the second metal particles 'the alloying reaction between the metal particles and the molten second metal particles due to thermal expansion: forming a higher stability than the melting point of the second metal particles Alloy phase. In a typical embodiment, the first metal particles are not melted at a reflow heat treatment temperature when the materialless agent of the present invention is used. Thereby, the flux-free solder containing the metal filler of the present invention can be fusion-bonded under low temperature conditions (typically low temperature conditions under the reflow heat treatment conditions of the ^37Pb eutectic solder), 146300.doc 丄j/8841 and after fusion bonding' It has the effect of no longer melting under heat treatment. It can be used at low temperatures and can be used in energy-saving processes and low-carbon dioxide emissions processes, and is advantageous in terms of thermal damage such as electrical and electronic equipment and substrate materials that can be suppressed. In the present invention, the group D ′ of the first metal particles and the second metal particles having the above composition can avoid the problem of agglomeration due to moisture absorption when using, for example, Cu powder. Further, in the present invention, the ith metal particles have Cu as a main component and 镰M to a genus particle contain a large amount of B i . Thereby, it is possible to provide a metal filler which can be melt-bonded at a low temperature and has a good bonding strength at room temperature after bonding, and can reduce the amount of use of a high-valent metal such as In or Ag. [First Metal Particle] The first metal is mainly composed of Cu. That is, the mass ratio of Cu among the elements constituting the first metal particles is the highest. The first metal particles further contain In and Sn in addition to Cu. Take this, the first! Metal particles can form a quasi-stable alloy phase. The formation of the quasi-stable alloy phase promotes the combination of the second metal particles and the second metal particles, so that a good bonding strength can be obtained during the melt bonding at a low temperature. In addition to TCu and InASn, the first metal particles are preferably one or more selected from the group consisting of Ag and Bi, in addition to the viewpoint of the alloying of the second metal particles. In a preferred embodiment, the first metal particles comprise Ag 5 to 15 mass. /. , out of 2 to 8 quality. /〇, Cu 49~81% by mass, In 2~8f amount % ' and Sn 1〇~2〇% by mass. Furthermore, it is also possible to contain unavoidable impurities at this time. In the preferred aspect, the first! The metal particles have at least one exothermic peak observed in the range of 230 to 300 t in differential scanning calorimetry (DM), and at least one endothermic peak is observed in the range of J46300.doc 1378841 and in the range of 480 to 530 °C. The peak of the heat observed in the range of 230 to 300 ° C, indicating the first! The metal particles form a quasi-stable alloy phase, and an endothermic peak observed in the range of 480 to 530 ° C indicates the melting point of the first metal particles. Further, the melting point described in the present specification means the solidus temperature determined by differential scanning calorimetry (DSC). Further, the above-described difference scanning heat measurement is typically carried out in a nitrogen atmosphere at a temperature increase rate of 10 ° C / min, in the range of 40 to 58 (rc measurement range. In a better aspect, the first metal The particles include Ag 5 to 15% by mass, 2 to 8% by mass, Cu 49 to 81% by mass, In 2 to 8 % by mass, and Sn 1 to 2% by mass, and the first metal particles are inferior. In the scanning calorimetry (Dsc), there are at least one exothermic peak observed in the range of 230 to 300 t, and at least one endothermic peak observed in the range of 480 to 530 ° C. The average diameter of the first metal particle is When the average particle diameter of the metal particles is 2 μηι or more, the specific surface area of the particles is small. Therefore, when the flux is formed from the metal filler of the present invention, for example, using a helping agent described later. The life of the contact surface solder paste of the first metal particle and the flux is longer. Further, when the flat diameter of the i-th metal particle is 2 or more, the reduction of the metal filler in the source self-flux can be reduced in the reflow heat treatment. The reaction (ie, the removal of the oxide film of the metal filler particles) The gas can reduce the voids generated inside the flux connection. In addition, from the viewpoint of the strength of the detailed paste, the average diameter of the metal particles is preferably below (4). When the particle size is too large, the gap between the particles becomes large. Therefore, it is easy to damage the dryness of the agent paste, and the part is easily detached from the time when the tantalum-bonded part is placed to the reflow heat treatment bundle. The average particle diameter of the first metal particles is 146300.doc 1378841, which is more preferably in the range of 5 to 25 μm. In addition, the average particle diameter in this specification is a value measured by the laser diffraction type particle diameter distribution measuring apparatus. • [Second metal particle] • The second metal particle contains Bi 40 to 70% by mass, and The metal of one or more of Ag, cu, In, and Sn is 30 to 60 mass%. / 〇. In addition, the unavoidable impurities may be contained at this time. The second metal particle may be returned to φ by the above composition. Melting during the heat treatment is favorably achieved by alloying between the first metal particles and the molten second metal particles due to thermal diffusion. • The content of Bi in the second metal particles is melt-bonded at room temperature. , and obtain room temperature after bonding Viewpoint of good bonding strength of view, based ./ ^ 4〇 mass above 70% by mass or less. The content of the above-described mass is preferably 5〇~6〇%.

第2金屬粒子中之選自Ag、Cu、In、及如中旧以上之 金屬含有量,從良好實現^金屬粒子與第2金屬粒子之人 金化之觀點觀之’係在30質量%以上,從m以充分量含: 第2金屬粒子中,可在低溫下溶融接合之觀點觀之,在 6〇%質量以下。上述含有量較佳為4〇〜5〇質量 付別 弟鱼屬粒子以含有Sn較佳。此時,可提供— 金屬填料,該金屬填料之低溫熔融特性及接合性良好,且 即使低溫下之熔融接合亦可賦與良好之接合強 屬粒子中之Sn含有量為40〜5〇質量%較佳。 “ 時第有選自、及1"中之1…金屬 7改善m改良低溶點化、機械強度等。 146300.doc 11- 1378841 另,由低溫熔融性及接合性之觀點觀之,第2金屬粒子 為Sn-Bi系合金粒子更佳’再佳為具有不易產生凝固缺陷 及偏析之共晶組成(典型為Sn_58Bi)2Sn Bi系合金粒子。The content of the metal selected from the group consisting of Ag, Cu, In, and the like in the second metal particles is 30% by mass or more from the viewpoint of achieving good metalization of the metal particles and the second metal particles. It is contained in a sufficient amount from m: in the second metal particle, it can be melted and joined at a low temperature, and is not more than 6% by mass. The above content is preferably 4 Å to 5 Å by mass. It is preferred that the genus genus particles contain Sn. In this case, a metal filler can be provided, and the low-temperature melting property and the bonding property of the metal filler are good, and even if the fusion bonding at a low temperature is performed, the Sn content in the good bonding strong particles is 40 to 5 〇 mass%. Preferably. "The first choice is from the 1" 1 ... metal 7 to improve m to improve low melting point, mechanical strength, etc. 146300.doc 11- 1378841 In addition, from the viewpoint of low temperature meltability and jointability, the second The metal particles are more preferably Sn-Bi-based alloy particles. Further, it is preferably a eutectic composition (typically Sn_58Bi) 2Sn Bi-based alloy particles which is less likely to cause solidification defects and segregation.

Sn-Bi系合金粒子典型為只以以及趴作為構成元素(但亦可 含有不可避免之雜質),但出自改善延展性,改良低熔點 化、機械強度之目的,可微量添加選自Ag、Cu、及匕中之 1種以上之金屬。 由與第1金屬粒子之平均粒徑相同之理由,即從與助焊 劑之反應性及焊劑膏之粘著力之觀點觀之,第2金屬粒子 之平均徑在5〜40 μπι之範圍較佳。第!金屬粒子之平均粒徑 在5〜2 5 μιη之範圍更佳。 [第1金屬粒子與第2金屬粒子之混合體] 本發明之金屬填料包含第丨金屬粒子與第2金屬粒子之混 合體。該混合體之金屬填料中,第2金屬粒子之量(以下亦 稱「第2金屬粒子之混合比」)相對第丨金屬粒子1〇〇質量份 在40〜300質量份之範圍。第2金屬粒子之混合比為4〇質量 伤以上時,由於金屬填料中之回流熱處理時熔融成份之存 在比例變多,因此可良好實施低溫下之熔融接合,且例如 作為焊劑在接合後可賦與良好之物理強度。另一方面,第 2金屬粒子之混合比超過1〇〇質量份時,可得到更良好之物 理強度。另一方面,第2金屬粒子之混合比超過3〇〇質量份 時,熔融之第2金屬粒子與第丨金屬粒子反應而形成之高熔 點之穩定合金相之存在比例少,因此無法得到耐熱性。由 焊劑接合部之物理強度及耐熱性之觀點觀之,第2金屬粒 146300.doc 12 1378841 子之混合比在100〜300質量份之範圍較佳。 第1金屬粒子及第2金屬粒子之粒度分佈可根據焊劑膏之 用途而狀。例如絲網印刷用途中,纟重視焊劑膏於基板 上轉印量少之問題下,以加宫 加寬粒度分佈較佳;在分配用途 及通孔填充用途t,在重視喷出流動性及孔掩埋性下,以 銳化粒度分佈較佳。 如上述,從與助焊劑之反應性及焊劑膏特性之觀點觀 之,第!金屬粒子及第2金屬粒子之平均粒徑分別在Η ㈣’及5〜40 _之範圍較佳,更佳為,第i金屬粒子及第2 金屬粒子之平均粒徑均在5〜25 _之範圍。 例如與助焊劑之組合,本發明之金屬填料可形成膏狀^ =劑。使用該無錯焊劑進行零件安裝時,會有在由回; 形成之焊劑接合部之特別是焊跡部份表面,形成有 溥助焊劑層之情形。若金屬填料之平均粒 劍層中金屬填料之微粒子在浮 X助知 、祕 丁隹子游狀態下(即金屬粒子互相 易於相隨’而在將焊劑接合之零件供給於後 續之助知劑洗淨步驟時,產生洗淨液中金屬填料之粒子产 =:零件之之不良情形。第1金屬粒子及第2金屬粒 粒控為5_上時,零件安裝時在助焊劑層中, 子之產1之微拉子將難以相隨’可抑制助谭劑層中浮游粒 子:生,因此可降低洗淨液令流出之粒子數量。另一方 Ϊ時::膏粒子及第2金屬粒子之平均粒徑都在25㈣以 下“劑賞之枯著力不易受損,故為較佳。 第2金屬粒子之炫點以在80〜160°c之範圍較佳,更佳為 146300.doc 13 1378841 100〜150°c之範圍。典型之實施態樣中,在使用本發明之 無鉛焊劑時之回流熱處理溫度下,第2金屬粒子熔融。 再者,本說明書所規定之第1金屬粒子及第2金屬粒子之 兀素組成。例如可以感應結合電漿(ICP)發光分析等進行 確⑽。另’關於粒子剖面之元素③成,可藉由sem— EDX(特性X線分析裝置)解析。 作為分別製造第丨金屬粒子及第2金屬粒子之方法,作為 微粉末製造方法,可採用眾所周知之方法,但以驟冷凝固 法較佳。作為利用驟冷凝固法之微粉末之製造方法,可舉 出水喷霧法、氣體噴霧法、離心噴霧法等。其中由可抑制 之氧含有量之方面觀之,以氣體錢法及離心噴霧法 體==中二”使用氮氣、氮氣、氦氣等惰性氣 产 '於可提1^氣體喷霧時之線速度,加快冷卻速 5,5_t/秒之二連度在 盤上面形成均—- 硪〜噴霧法中,由在旋轉圓 _〇Ν)較佳,圓盤旋轉速二以塞隆 佳。 辱速度在64〜12萬rpm之範圍較 <無鉛垾劑> 本發明亦提供—種 劑。本說明書巾,所/「本發明之金屬_之無錯焊 錯之含有量在(U^;:無錯」,係按照即環境規則,指 金屬填料成份與助二::者。本發明之無鉛焊劑以包含 成伤之焊劑膏較佳。本發明之無鉛 146300.doc j37B841 烊劑更典型為包含金屬填料成份與助焊 成份亦可包含上述太n金屬填料 果之_料,但在無損本發明效 么居/ 金屬填料。作為上述焊劑膏中 金屬填料成份之含有率,從焊 劑音】η詩旦。以 龍之硯點觀之,為详 d膏100質Ε/ο中之84〜94質 s 现固較佳。上述含右遙 更佳之範圍可因應焊劑膏用 中,/舌. h用途而疋。例如絲網印刷用途 中,在重視焊劑膏於基板上轉 ^ 〇7 Q1 ^ θ 得「里^時,上述含有率以在 87〜91質置%之範圍較佳,The Sn-Bi-based alloy particles are typically composed of only yttrium and yttrium as constituent elements (but may contain unavoidable impurities), but are preferably selected from Ag, Cu for the purpose of improving ductility, improving low melting point and mechanical strength. And one or more metals in the sputum. The average diameter of the second metal particles is preferably in the range of 5 to 40 μm from the viewpoint of the same as the average particle diameter of the first metal particles, that is, from the viewpoint of the reactivity with the flux and the adhesion of the solder paste. The first! The average particle diameter of the metal particles is more preferably in the range of 5 to 2 5 μm. [Mixing of First Metal Particles and Second Metal Particles] The metal filler of the present invention contains a mixture of the second metal particles and the second metal particles. In the metal filler of the mixture, the amount of the second metal particles (hereinafter also referred to as "the mixing ratio of the second metal particles") is in the range of 40 to 300 parts by mass based on 1 part by mass of the second metal particles. When the mixing ratio of the second metal particles is 4 Å or more, the ratio of the presence of the molten component during the reflow heat treatment in the metal filler is increased, so that the fusion bonding at a low temperature can be favorably performed, and for example, it can be used as a flux after bonding. With good physical strength. On the other hand, when the mixing ratio of the second metal particles exceeds 1 part by mass, a more excellent physical strength can be obtained. On the other hand, when the mixing ratio of the second metal particles exceeds 3 Å by mass, the proportion of the stable alloy phase having a high melting point formed by the reaction between the molten second metal particles and the second metal particles is small, and thus heat resistance cannot be obtained. . From the viewpoint of physical strength and heat resistance of the flux joint portion, the mixing ratio of the second metal particles 146300.doc 12 1378841 is preferably in the range of 100 to 300 parts by mass. The particle size distribution of the first metal particles and the second metal particles may be in accordance with the use of the solder paste. For example, in the screen printing application, 纟 attaches great importance to the problem that the amount of transfer of the solder paste on the substrate is small, and the particle size distribution is better with the addition of the palace; in the distribution use and the use of the through hole filling, the liquidity and the hole are emphasized. Under burying, it is better to sharpen the particle size distribution. As mentioned above, from the viewpoint of reactivity with flux and characteristics of solder paste, the first! The average particle diameter of the metal particles and the second metal particles is preferably in the range of Η(4)′ and 5 to 40 Å, and more preferably, the average particle diameter of the ith metal particles and the second metal particles are both 5 to 25 Å. range. For example, in combination with a flux, the metal filler of the present invention can form a paste. When the component is mounted using the error-free solder, there is a case where a flux layer is formed on the surface of the solder joint portion formed particularly by the solder trace portion. If the fine particles of the metal filler in the average particle layer of the metal filler are in the state of floating X, the metal particles are easy to follow each other, and the parts joined by the flux are supplied to the subsequent aid agent for washing. In the net step, the particle of the metal filler in the cleaning liquid is produced =: the defect of the part. When the first metal particle and the second metal particle are controlled to be 5_, the part is installed in the flux layer, and the sub-component The micro-pillars of the production 1 will be difficult to follow. It can inhibit the floating particles in the layer of the aiding agent: it can reduce the amount of particles that the cleaning liquid will flow out. The other side: the average of the paste particles and the second metal particles The particle size is below 25 (four) or less. "The dryness of the agent is not easily damaged, so it is preferable. The bright spot of the second metal particle is preferably in the range of 80 to 160 ° C, more preferably 146300.doc 13 1378841 100~ In the typical embodiment, the second metal particles are melted at the reflow heat treatment temperature when the lead-free solder of the present invention is used. Further, the first metal particles and the second metal particles specified in the present specification. The composition of the elements. For example, it can be combined The ICP (ICP) luminescence analysis and the like are confirmed (10). In addition, the element 3 of the particle profile can be analyzed by sem-EDX (characteristic X-ray analysis device). As a method for producing the second metal particle and the second metal particle, respectively. As a method of producing the fine powder, a well-known method can be employed, but a rapid solidification method is preferred. Examples of the method for producing the fine powder by the rapid solidification method include a water spray method, a gas spray method, and a centrifugal spray method. Etc. In terms of the oxygen content that can be suppressed, the gas method and the centrifugal spray method == the second two" use inert gas such as nitrogen, nitrogen, helium, etc. The line speed, the speed of cooling is 5,5_t / sec. The second degree of continuous formation on the disc - 硪 ~ spray method, by rotating in the circle _ 〇Ν) is better, the disc rotation speed is two to the celen. The rate of abuse is in the range of 64 to 120,000 rpm. <Lead-free tincture> The present invention also provides a seed. The content of the metal of the present invention is (U^;: error-free), and refers to the metal filler component and the second aid: according to the environmental regulations. The lead-free solder is preferably included in the solder paste containing the wound. The lead-free 146300.doc j37B841 bismuth agent of the present invention is more typically composed of a metal filler component and a fluxing component, and may also contain the above-mentioned material of the n-n metal filler, but in the non-destructive Inventive effect / metal filler. As the content of the metal filler component in the above solder paste, from the solder sound] η poetry. Take the dragon's point of view, for the detailed d paste 100 quality ο / ο in the 84~94 The quality s is better now. The above range with better right distance can be used in the flux paste, / tongue. h. For example, in screen printing applications, the solder paste is applied to the substrate. Q7 Q1 ^ θ In the case of "in the case of ^, the above content ratio is preferably in the range of 87 to 91%.

^ m 尺住马88〜90質量%之範圍。分 配用途中,重視吐出流動性 0/ _ 上这3有率以85〜89質量 %之範圍較佳,更佳為86〜88質量%之範1 助焊劑成份含有松香、溶劑 劑活性劑、及觸變劑較佳。 如上述之助焊劑成份適於金屬填料之表面處理。即,回产 ^處理時藉由除去焊劑膏中金屬填料成份之氧化膜,_ 再乳化’可促進金屬之溶融及導因於熱擴散之合金化。作 為助焊劑之成份,可使用眾所周知之材料。 <連接構造體> 本發明亦提供—種連接構造體,其具有第1子零件、 第2電子零件,及接合該第1電子零件與該第2電子零件之 焊劑接合部’藉由將前述之本發明之無料劑進行回流献 處理’形成該焊劑接合部。作為第i電子零件及第2電子零 件之組合,可舉出基板電極與搭載零件電極之組合等。作 為用以形成本發明之連接構造體之幻電子零件與第2電子 令件之接合方法’可舉出對基板電極塗布焊劑膏後載置以 搭載零件電極,再以回流熱處理進行接合之方法;對搭載 146300.doc 1378841 2件電極或基板電極塗布以焊劑膏,藉由回流熱處理形成 ^後:再重疊搭載零件電極與基板電極,並再次以回流 理進灯接。之方法等。上述情形’,可藉 焊劑接合連接該電極間。 门之 回流熱處理之溫度在100〜·。c之範圍較佳更 之範圍。回流熱處理溫度典型4 :設定成未達 第1金屬粒子之熔點且在第2金屬粒子之炫點以上。使用本 發明之無鉛焊劑,連接電子裝置等之搭載零件電極Μ板 電極時,若被賦與於D金屬粒子熔點以上之熱經歷時, 則第2金屬粒子熔融,第!金屬粒子及搭载零件電極與基板 電極接合。此時,第i金屬粒子與第2金屬粒子之金屬間, 熱擴散反應加速進行,合成比該第2金屬粒子之熔點為高 m新的穩定合金相’形成第i金屬粒子及連接搭載零 件電極與基板電極之連接構造體。該新的穩定合金相之炼 點比包含Sn-3.〇Ag-0.5Cl^無錯焊劑之回流熱處理溫度(例 如260t左右)高,後續步驟中即使接受複數次熱處理焊劑 亦不熔融。根據本發明,可防止由於焊劑之再熔融所造成 之零件電極間產生之短路。 <零件搭載基板> 本發明亦提供一種具有基板與搭載於基板上之上述本發 明之連接構造體之零件搭載基板。 [實施例] 以下,根據實施例具體說明本發明,但本發明不受此限 制。 146300.doc -16- 1378841 [實施例1 ] (1)第1金屬粒子之製造 將Cu 6.5 kg(純度99%質量以上)、Sn i 5 kg(純度99%質 量以上)、Ag 1.0 kg(純度99%質量以上)、出〇 5 kg(純度 99%質量以上)及In 〇·5 kg(純度99%質量以上)(即目標組成 元素,Cu : 65質量% ' Sn : 15質量% ' Ag : 1〇質量〇/〇、 Bi: 5質量。/〇、及111: 5質量%),置入石墨坩堝,在99體積 φ %以上之氦氛圍中,藉由高頻感應加熱裝置加熱至140(TC 而熔解。接著,從坩堝前端將該熔融金屬導入氦氛圍之喷 霧槽内後,從設於坩堝前端附近之氣體喷嘴噴出氦氣(純 度99體積%以上,氧濃度未達〇1體積%,壓力2 5 Μρ&)進 行霧化,製造第1金屬粒子。此時之冷卻速度為26〇〇它/ 秒。 使用氣流式分級機(日清工程:TC_15N),將該第i金屬 粒子以20 μηι設定進行分級,回收大粒子部份後,再次以 • 3〇 μηι設定進行分級回收小粒子部分。以雷射繞射式粒子 徑分佈測定裝置(HEL〇S&R〇D〇s)測定回收之合金粒子, 付知平均粒裎為丨5」μηι。以示差掃描熱量計(島津製作 所.DSC-50)在氮氛圍下,以升溫速度1〇。〔: /分之條件在 40〜580 C之範圍測定該第!金屬粒子,於5〇2<>c及521艽下 核測到吸熱峰,可由藉此顯示之複數個熔點,確認複數之 合金相之存在。另,於258t及282t檢測到發熱峰,可確 認準穩定合金相之存在。將此處所得之第丨金屬粒子在以 下記為第1金屬粒子A。 I46300.doc •17- 1378841 同樣,將藉由霧化所得之第】金屬粒子以1〇 0爪設定進行 分級,回收大粒子部份後,再次以2〇 μιη設定進行分級, 回收小粒子部分。將所回收之合金粒子以雷射繞射式粒子 徑分佈測定裝置(HELOS&RODOS)測定,得知其平均粒徑 為8.1 μηι。將所得之第i金屬粒子在以下稱為第丄金屬粒子 B。 同樣,將藉由霧化所得之第丨金屬粒子以16 μπι設定進 订分級,回收大粒子部份後,再次以1〇 設定進行分 級,回收小粒子部分。將所回收之合金粒子以雷射繞射式 粒子徑分佈測定裝置(HELOS&ROD〇s)測定,得知平均粒 徑為2·7 μπι^將所得之第i金屬粒子在以下記為第丨金屬粒 子C。 同樣,將藉由霧化所得之第1金屬粒子以3〇 μηι設定進行 分級,回收大粒子部分。將所回收之合金粒子以雷射繞射 式粒子徑分佈測定裝置(HELOS&RODOS)測定,得知其平 均粒徑為30.2 μηι。將所得之第}金屬粒子在以下稱為第工 金屬粒子D。 (2)第2金屬粒子之製造 第2金屬粒子係使用山石金屬(股份有限)公司製之粒度 25 μιη〜45 μηι之焊劑粉末Bi_42Sn(元素組成,⑴:58質量 %,Sn: 42質量%)(以下記為第2金屬粒子A),或山石金屬 (股份有限)公司製之粒度1〇 μιη〜25 μηι之焊劑粉末Bi· 42Sn(元素組成,Bi : 58質量%,Sn : 42質量%)(以下記為 第2金屬粒子B)。藉由差示掃描熱量計(島津製作所:dsc_ 146300.doc •18- 1378841^ m feet live in the range of 88 to 90% by mass. In the distribution use, it is important to pay attention to the discharge fluidity 0/ _. The above 3 yield is preferably in the range of 85 to 89% by mass, more preferably 86 to 88% by mass. The flux component contains rosin, a solvent active agent, and Thixotropic agents are preferred. The flux composition as described above is suitable for the surface treatment of the metal filler. That is, by removing the oxide film of the metal filler component in the solder paste during the reprocessing, _ re-emulsification can promote the melting of the metal and the alloying due to thermal diffusion. As a component of the flux, well-known materials can be used. <Connection Structure> The present invention also provides a connection structure including a first sub-part, a second electronic component, and a solder joint portion s joining the first electronic component and the second electronic component The above-described materialless agent of the present invention is subjected to a reflow treatment to form the flux joint portion. The combination of the i-th electronic component and the second electronic component includes a combination of a substrate electrode and a mounted component electrode. A method of joining the phantom electronic component and the second electronic component for forming the connection structure of the present invention is a method in which a solder paste is applied to a substrate electrode, and a component electrode is mounted thereon, and then joined by a reflow heat treatment; The 146300.doc 1378841 two-piece electrode or substrate electrode is coated with a solder paste, and is formed by reflow heat treatment. Then, the component electrode and the substrate electrode are overlapped and mounted again by reflow. Method and so on. In the above case, the electrode can be joined by a solder joint. The temperature of the reflow heat treatment of the door is 100~·. The range of c is preferably better. The reflow heat treatment temperature is typically 4: it is set so as not to reach the melting point of the first metal particles and above the bright point of the second metal particles. When the electrode electrode plate electrode of the electronic device or the like is mounted by using the lead-free solder of the present invention, when the heat is applied to the melting point of the D metal particles or more, the second metal particle is melted, and the second metal particle is melted. The metal particles and the mounted component electrodes are bonded to the substrate electrodes. At this time, the thermal diffusion reaction is accelerated between the metal of the i-th metal particle and the second metal particle, and the synthesis is higher than the melting point of the second metal particle. The new stable alloy phase is formed to form the i-th metal particle and the electrode of the connected component. A connection structure to the substrate electrode. The new stable alloy phase has a higher refining point than the Sn-3.〇Ag-0.5Cl^ non-correcting flux (e.g., about 260 t), and does not melt even if it is subjected to a plurality of heat treatment fluxes in the subsequent step. According to the present invention, it is possible to prevent a short circuit generated between the electrodes of the parts due to remelting of the flux. <Parts-mounted substrate> The present invention also provides a component mounting substrate having a substrate and the above-described connection structure of the present invention mounted on the substrate. [Examples] Hereinafter, the present invention will be specifically described based on examples, but the present invention is not limited thereto. 146300.doc -16- 1378841 [Example 1] (1) Production of first metal particles Cu 6.5 kg (purity of 99% by mass or more), Sn i 5 kg (purity of 99% by mass or more), Ag of 1.0 kg (purity) 99% by mass or more), 5 kg (purity of 99% by mass or more) and In 〇·5 kg (purity of 99% by mass or more) (ie, target constituent element, Cu: 65 mass% 'Sn: 15% by mass' Ag : 1 〇 mass 〇 / 〇, Bi: 5 mass. / 〇, and 111: 5 mass%), placed in graphite crucible, heated to 140 by high frequency induction heating device in a 体积 atmosphere of 99 vol% or more Then, the molten metal is introduced into the spray chamber of the helium atmosphere from the tip end of the crucible, and then helium gas is ejected from a gas nozzle provided near the tip end of the crucible (purity of 99% by volume or more, and oxygen concentration is less than 1% by volume). , the pressure of 2 5 Μρ &) was atomized to produce the first metal particles. The cooling rate at this time was 26 〇〇 it / sec. Using the air flow classifier (Nissin Engineering: TC_15N), the i-th metal particles were 20 μηι setting for classification, after recovering large particle fractions, set again with • 3〇μηι setting for small fractionation Sub-portion. The recovered alloy particles were measured by a laser diffraction particle diameter distribution measuring device (HEL〇S & R〇D〇s), and the average particle size was 丨5”μηι. The differential scanning calorimeter (Shimadzu Corporation). DSC-50) The temperature of the heating solution was measured at a temperature of 1 〇 in a nitrogen atmosphere. The range of 40: 580 C was measured in the range of 40 to 580 C, and was measured at 5 〇 2 <> c and 521 核. The endothermic peak can be confirmed by the plurality of melting points thus displayed, and the presence of a plurality of alloy phases is detected. Further, an exothermic peak is detected at 258t and 282t, and the presence of the quasi-stable alloy phase can be confirmed. Hereinafter, it is referred to as a first metal particle A. I46300.doc • 17- 1378841 Similarly, the first metal particles obtained by atomization are classified by a setting of 1 〇 0 claws, and after recovering a large particle portion, again, 2 〇 μηη The fractionation was carried out to recover small particle fractions, and the recovered alloy particles were measured by a laser diffraction particle diameter distribution measuring apparatus (HELOS & RODOS) to find that the average particle diameter was 8.1 μη. The second metal particle B. Similarly, the ruthenium metal particles obtained by atomization are set at 16 μm, and the large particle fraction is recovered, and then fractionated by 1 , to recover the small particle fraction. The recovered alloy particles are The laser diffraction type particle diameter distribution measuring apparatus (HELOS & ROD〇s) measured the average particle diameter of 2·7 μπι^ and the obtained i-th metal particles were hereinafter referred to as the second metal particles C. Similarly, the first metal particles obtained by atomization were classified by setting 3 μ μm to recover large particle fractions. The collected alloy particles were measured by a laser diffraction particle diameter distribution measuring apparatus (HELOS & RODOS), and the average particle diameter was found to be 30.2 μη. The obtained metal particles are hereinafter referred to as work metal particles D. (2) Production of the second metal particles The second metal particles were obtained by using a flux powder of 25 μm to 45 μηη, manufactured by Seishi Metal Co., Ltd., and a flux powder Bi_42Sn (element composition, (1): 58% by mass, Sn: 42% by mass) (hereinafter referred to as the second metal particle A), or the flux powder of the particle size of 1 〇μιη to 25 μηι, manufactured by Yamaishi Metal Co., Ltd. (element composition, Bi: 58% by mass, Sn: 42% by mass) (Hereinafter, it is described as the second metal particle B). By differential scanning calorimeter (Shimadzu: dsc_ 146300.doc • 18- 1378841

50)以與前述相同之測定條件測定之熔點,第2金屬粒子A 及第2金屬粒子B均為138°C。再者,將第2金屬粒子a及第 2金屬粒子B以雷射繞射式粒子徑分佈測定裝置 (HELOS&RODOS)測定,得知其平均粒徑分別為35哗及 20.4 μιη。 (3) 無鉛焊劑膏之製作 以質量比100 : 300混合上述第丨金屬粒子Α與第2金屬粒 _ +A,作為金屬填料成份。接著,混合金屬填料成份89.5 . 質量%與助烊劑(A)l〇.5質量。/。,依次投入焊料軟化機 (MARUKOMU : SPS-1)、及脫泡捏和機(松尾產業:snb_ 350)製作焊劑膏。 (4) 接合強度(剪切強度)之測定 將上述焊劑膏印刷塗布於尺寸25 mmx25 mm,厚度〇25 mm之Cu基板上,搭載尺寸2 mmx2 mm ’厚度〇 5爪爪之^ 晶片後,在氮氛圍下以峰值溫度16〇t進行回流熱處理製 • 作樣本。熱處理裝置係使用回流模擬器(MARUKOMU : SRS-1C)。溫度分佈係採用以丨5«c /秒從熱處理開始(常溫) 升皿至120 C,從120。(:經過1〇秒漸漸升溫至135〇c後,以 2.〇°C/秒升溫,並在峰值溫度^❹^保持15秒之條件。印刷 圖案形成係使用絲網印刷機(Micr〇tek : MT-320TV)。印刷 罩為金屬製,並且塗刷器為胺基甲酸酯製。罩開口尺寸為 2 mmx3.5 mm,厚度為^ mm。印刷條件為速度5〇 mm/ 穿>、印壓〇. 1 MPA,塗刷器壓〇 2 MPa,背壓〇· 1 MPa,侵 襲角度20。’間距0 mm,印刷次數為1次。 146300.doc -19- 1378841 接著,在常溫(25。〇下,將上述製作之樣本之剪切方向 :晶片接合強度藉由負荷測定器,以按壓速度ι〇 —分測 定,換算成每單位面積之值,為15 4必。再者,將上述 製作之樣本在加熱板上加熱至26〇艽,保持3分鐘後,以與 亡述相同之方法測定剪切方向之晶片接合強度,換算成每 单位面積之值’為0.35 MPa。藉此,可確認該樣本具有即 使26(TC加熱時亦可保持接合強度之耐熱性。再者,可保 持接合強度,係指顯示〇. 2 〇 MPa以上之接合強度。 ‘、 [貫施例2〜1 0,比較例丨及2] 使用第1金屬粒子A與第2金屬粒子人之混合比改變之金 屬填料成份,以與實施例丨相同之方法製作焊劑膏,與實 施例1相同地測定晶片捿合強度,將結果顯示於表丨之實施 例2〜5、以及比較例卜另,分別使用與實施例丨〜5相同混 合比之金屬填料成份,將Cu晶片接合時之溫度分佈係採用 以1.5 C /秒從熱處理開始(常溫)升溫至12(Γ(:,從12〇充經 過110秒漸漸升溫至l35°c後,以2 (rc/秒升溫,並在峰值 溫度180°C保持15秒之條件,結果亦顯示於表丨之實施例 6〜10及比較例2中。由表!之比較例之結果明顯可知, 不含第1金屬粒子時,若加熱於26〇°c則焊劑接合部(連接 部)熔融,因此剪切強度為〇 MPa。另一方面可知,含有第 1金屬粒子之實施例1〜1 〇中,即使以26〇。^加熱時,接合強 度亦在0.2 MPa以上,焊劑不會再熔融。再者,本說明書 中,所謂焊劑不會再熔融,係搾接合強度在〇 2〇 MPaw 146300.doc -20- 1378841 [比較例3] 使用先前之代表性無鉛焊劑(Sn-3.0Ag-〇_5Cu)膏,以與 實施例1(4)相同之方法進行(^晶片之接合強度之測定。結 - 果顯示於表1。惟,使用該焊劑材料接合Cu薄片時之回流 • 溫度分佈,係採用以秒從熱處理開始(常溫)升溫至 l4〇°C,再從140°C經過11〇秒漸漸升溫至17〇»c後以 2.0C/秒從170C升溫至250。(:,並在峰值溫度25〇°c保持15 φ 秒之條件。由比較例3之結果可知,使用代表性之無鉛烊 劑Sn-3.OAg-0.5Cu時,260°C加熱時焊劑接合部熔融,接合 強度為0 MPa。 [實施例11〜20] 使用第1金屬粒子B與第2金屬粒子B之混合比改變之金 屬填料成份,以與實施例丨相同之方法製作焊劑膏,進而 以160 C或1 80 C之峰值溫度進行回流熱處理(與實施例 1〜10相同),同樣地測定接合強度。將結果顯示於表2之實 •施例11〜20。根據表2可知,含有第i金屬粒子8之實施例 U〜20中,顯不260<>C加熱時亦為〇.2〇 MPa以上之接合強 度,顯示保持接合狀態之耐熱性。 [實施例21] 於包含冑耐熱環氧樹脂玻璃布之印刷基板之Cu基板上, ㈣㈣以實施例2製作之無錯焊劑’搭載0603尺寸積層 陶f晶月f容器(以下略為_3C,或單稱搭載零件)後, 乂貝=例1.„己載之條件進行回流熱處理,製作樣本。 接著將上述製作之樣本於加熱板上以1 G5。(:加熱,以底 146300.doc •21 · 1378841 部填充物不覆蓋搭載零件上部之方式塗布底部填充物,以 電爐以165°C硬化2小時。接著,將透明模製樹脂塗布於搭 载零件之上部及周圍’以電爐!^^硬化4小時。 接著以60 C、60%RH吸濕40小時後,在氮氛圍下進行峰 值溫度260eC之回流熱處理。熱處理裝置係使用回流模擬 益(MARUKOMU : SRS-1C)。溫度分佈係採用以i 5〇c/秒從 熱處理開始(常溫)升溫至1 5〇°C,從150°C經過1 〇〇秒漸漸升 溫至21(TC後,再以2.0eC/秒從21〇t升溫至26(TC,並在峰 值溫度260 C保持15秒之條件。接著,因回流熱處理焊劑 熔融,以目視觀察零件電極間是否短路。結果顯示於表 3。可確認的是,實施例21中,觀察不到零件電極間之短 路’顯示260°C下焊劑材亦不流動之耐熱性。 [比較例4] 以與實施例21相同之方法,進行先前之代表性無鉛焊劑 Sn-3.0Ag-0.5Cu之評估。惟,只有搭載〇6〇3C時之溫度分 佈不同,而採用以1.51: /秒從熱處理開始(常溫)升溫至 140 C,從140 C經過1〇〇秒漸漸升溫至17〇它後,再以 2.0C/秒從210C升溫至250°C,並在峰值溫度25(TC保持15 秒之條件。結果顯示於表3。 由表3之結果清晰可知,比較例4中,焊劑以非常高之機 率熔融,而於零件電極間產生短路。另一方面,實施例21 中’雖然第2金屬粒子之熔點在i38°c,但亦不產生零件電 極間之短路。由以上結果可知,使用本發明之金屬填料之 無錯焊劑,可進行低溫下之零件接合,即使之後回流,焊 146300.doc -22- 1378841 劑亦不會熔融而流出,係耐熱性優良之材料。 [實施例22]50) The melting point measured under the same measurement conditions as described above, both the second metal particles A and the second metal particles B were 138 °C. Further, the second metal particles a and the second metal particles B were measured by a laser diffraction type particle diameter distribution measuring apparatus (HELOS & RODOS), and the average particle diameters thereof were 35 Å and 20.4 μηη, respectively. (3) Preparation of lead-free solder paste The above-mentioned second metal particles Α and the second metal particles _ + A were mixed at a mass ratio of 100 : 300 as a metal filler component. Next, the metal filler component is mixed with 89.5 mass% and the auxiliary agent (A) l〇.5 mass. /. A solder paste was prepared by sequentially applying a solder softening machine (MARUKOMU: SPS-1) and a defoaming kneader (Songo industry: snb_350). (4) Measurement of joint strength (shear strength) The above-mentioned solder paste was printed and applied on a Cu substrate having a size of 25 mm × 25 mm and a thickness of 〇 25 mm, and mounted on a wafer having a size of 2 mm × 2 mm 'thickness 〇 5 claws. Reflow heat treatment at a peak temperature of 16 〇t in a nitrogen atmosphere. The heat treatment apparatus used a reflux simulator (MARUKOMU: SRS-1C). The temperature distribution is from 丨5«c / sec from heat treatment (normal temperature) to 120 C, from 120 °. (: After 1 sec. gradually warmed up to 135 〇 c, the temperature was raised by 2. 〇 ° C / sec and kept at the peak temperature for 15 seconds. The printing pattern was formed using a screen printing machine (Micr〇tek) : MT-320TV. The printing cover is made of metal and the applicator is made of urethane. The opening size of the cover is 2 mm x 3.5 mm and the thickness is ^ mm. The printing condition is speed 5 〇 mm / wear > , printing pressure 〇 1 MPA, squeegee pressure 〇 2 MPa, back pressure 〇 · 1 MPa, invasive angle 20. 'Pitch 0 mm, printing times is 1. 146300.doc -19- 1378841 Then, at room temperature ( 25. The cutting direction of the sample prepared as described above: the wafer bonding strength is measured by the load measuring device at a pressing speed, and is converted into a value per unit area, which is 15 4 . The sample prepared above was heated to 26 Torr on a hot plate, and after holding for 3 minutes, the wafer bonding strength in the shear direction was measured in the same manner as described above, and the value per unit area was 0.35 MPa. It can be confirmed that the sample has a heat resistance of 26 even when the TC is heated. Further, it can be protected. The bonding strength is a bonding strength of 〇. 2 〇 MPa or more. ', [Examples 2 to 10, Comparative Examples 2 and 2] The mixing ratio of the first metal particle A to the second metal particle is changed. A solder paste was prepared in the same manner as in Example 金属, and the wafer bonding strength was measured in the same manner as in Example 1. The results are shown in Examples 2 to 5 of the Table and Comparative Examples, respectively. The temperature distribution of the Cu wafer when the Cu wafer was joined was the same as that of the example 丨5 to 5, and the temperature was adjusted from 1.5 C / sec from the heat treatment (normal temperature) to 12 (Γ (:, from 12 〇 after 110 seconds) After gradually raising the temperature to l35 ° C, the temperature was raised by 2 (rc / sec, and maintained at a peak temperature of 180 ° C for 15 seconds, and the results are also shown in Examples 6 to 10 and Comparative Example 2 of the Table. As a result of the comparative example, it is apparent that when the first metal particles are not contained, the flux joint portion (joining portion) is melted when heated at 26 ° C, so the shear strength is 〇 MPa. On the other hand, it is understood that the first metal is contained. In the examples 1 to 1 of the particles, even when heated by 26 〇. The bonding strength is also 0.2 MPa or more, and the flux is not melted. Further, in the present specification, the flux is not remelted, and the bonding strength is 〇2〇MPaw 146300.doc -20-1378841 [Comparative Example 3] Using the previous representative lead-free solder (Sn-3.0Ag-〇_5Cu) paste, the same method as in Example 1 (4) was carried out (the measurement of the bonding strength of the wafer was carried out. The results are shown in Table 1. However, The reflow and temperature distribution when bonding the Cu flakes using the flux material is carried out by heating from the beginning of the heat treatment (normal temperature) to l4 〇 ° C in seconds, and then gradually heating from 140 ° C to 11 〇 to 17 〇 » c after 2.0 C/sec is raised from 170C to 250. (:, and maintained at a peak temperature of 25 〇 ° C for 15 φ seconds. From the results of Comparative Example 3, it is known that when a representative lead-free bismuth Sn-3.OAg-0.5Cu is used, flux bonding at 260 ° C heating The part was melted, and the bonding strength was 0 MPa. [Examples 11 to 20] Using the metal filler component in which the mixing ratio of the first metal particles B and the second metal particles B was changed, a solder paste was produced in the same manner as in Example ,, and further The reflow heat treatment was carried out at a peak temperature of 160 C or 180 C (the same as in Examples 1 to 10), and the joint strength was measured in the same manner. The results are shown in Table 2, Examples 11 to 20. According to Table 2, it is found that In Examples U to 20 of the i-th metal particles 8, the bonding strength of 〇2 MPa or more was also exhibited in the case of heating, and the heat resistance in the bonded state was exhibited. [Example 21] On the Cu substrate of the printed circuit board of the heat-resistant epoxy resin glass cloth, (4) (4) The error-free flux prepared in the second embodiment is equipped with a 0603-size laminated ceramic f crystal moon f container (hereinafter abbreviated as _3C, or a single-loaded component), 乂Shell = Example 1. „Contained conditions for reflow heat treatment, making samples Next, the sample prepared above was applied to the hot plate at 1 G5. (: heating, the underfill was applied to the upper portion of the mounting part without covering the upper portion of the mounting part, and the hardener was hardened at 165 ° C in an electric furnace. Then, the transparent molding resin was applied to the upper part and the periphery of the mounting part and hardened by electric furnace for 4 hours. Then, after absorbing 40 C and 60% RH for 40 hours, the peak temperature was 260 eC in a nitrogen atmosphere. Reflow heat treatment. The heat treatment device uses reflux simulation (MARUKOMU: SRS-1C). The temperature distribution is increased from 1 to 5 °C from the start of heat treatment (normal temperature) at i 5 °c / sec, and 1 〇 from 150 ° C. The leap second gradually warms up to 21 (after TC, then raises the temperature from 21 〇t to 26 (TC at 2.0 eC/sec, and maintains the peak temperature at 260 C for 15 seconds. Then, the flux is melted by reflow treatment, and the parts are visually observed. Whether the electrodes were short-circuited between the electrodes. The results are shown in Table 3. It was confirmed that in Example 21, the short circuit between the component electrodes was not observed, and the heat resistance of the flux material at 260 ° C was not observed. [Comparative Example 4] The same method as in Embodiment 21, Evaluation of the previous representative lead-free solder Sn-3.0Ag-0.5Cu. However, the temperature distribution is different only when 〇6〇3C is mounted, and the temperature is raised to 140 C from the heat treatment (normal temperature) at 1.51:/sec. C gradually warmed up to 17 经过 after 1 〇〇 second, then increased from 210 C to 250 ° C at 2.0 C / sec, and at a peak temperature of 25 (TC maintained for 15 seconds. The results are shown in Table 3. From Table 3 As is clear from the results, in Comparative Example 4, the flux was melted at a very high probability, and a short circuit occurred between the electrode electrodes. On the other hand, in Example 21, although the melting point of the second metal particles was i38 ° C, no short circuit between the component electrodes occurred. From the above results, it is understood that the use of the flux-free flux of the metal filler of the present invention allows joining of parts at a low temperature, and even after reflow, the solder 146300.doc-22-1378841 does not melt and flow out, and is a material excellent in heat resistance. . [Example 22]

以質里比100: 186混合第1金屬粒子A與第2金屬離子 A,作為金屬填料之成份。接著混合金屬填料成份9〇質量 %、與助焊劑(B)10質量%,以與實施例丨相同之步驟製作 焊劑膏。對包含高耐熱環氧樹脂玻璃布之印刷基板之^電 極上印刷塗布焊劑膏,並搭載刚5尺寸電阻晶片(以下稱 為1005R。’或亦單稱之為搭載零件)後,於氮氛圍下以峰值 ^度160。(:之條件進行回流熱處理,製作樣本1所得之 k本乂裒氧树月曰包埋,進而藉由剖面研磨而觀察搭載零件 接合剖© ’計算搭載零件接合部之焊劑上層所存在之助焊 劑層中以浮游狀態(即金屬粒子相互分離之狀態)存在之金 屬粒^(浮游粒子)之數量。結果顯示於表[再者,表愤 不之浮游粒子之數量,係將計算_R之6處接合部之浮游 粒子之值作為平均值者。The first metal particle A and the second metal ion A are mixed at a mass ratio of 100: 186 as a component of the metal filler. Then, a flux paste was prepared by mixing the metal filler component of 9% by mass and 10% by mass of the flux (B) in the same manner as in Example 。. Applying a solder paste to the electrode of a printed circuit board containing a high heat-resistant epoxy resin glass cloth, and mounting a film of a 5 size resistor (hereinafter referred to as 1005R. or simply as a mounting part), under a nitrogen atmosphere Take the peak ^ degrees 160. (: The conditions of the reflow heat treatment were carried out, and the sample of the sample was obtained by embedding the k-type oxygen tree, and the cross-section polishing was performed to observe the joint part of the mounted part. 'The flux existing in the upper layer of the solder of the joint part of the mounting part was calculated. The number of metal particles (floating particles) present in the layer in a floating state (ie, the state in which the metal particles are separated from each other). The results are shown in the table [again, the number of floating particles that are not angry, the system will calculate _R 6 The value of the floating particles at the joint is taken as the average.

[實施例23〜24J 取代貫施例22之第1金屬粒子A,使用第i金屬粒子8或 第1金屬粒子C,進行相同評估。結果顯示於表4。由圖4之 結果清晰可知,使用平均粒徑27㈣之第α屬粒子c時, 觀察到在接合部之焊劑上層之助焊劑層中之較多浮游粒 子另方面,使用平均粒徑金屬粒 平均粒徑15.1 μιη之第1仝屬 ^ 第1金屬粒子Α時,可知產生於助焊劑 層中之浮游粒子較少。l 如此,與使用之金屬粒子之 徑小(例如2_7 μιη)之悴拟知LU 习粒 μηυ之清形相&,可知該平均粒役例如為μ 146300.doc -23- 1378841 及15.1 μπι時,能得到於助焊劑層中不易產生浮游粒子 之優點。 [實施例25〜27] 以質量比1〇〇: 186混合第i金屬粒子八與第2金屬粒子 〇B,作為金屬填料成份。接著混合金屬填料成份89 5質量 =、及助焊劑(Β)1〇·5質量%,以與實施例〗相同之步驟製作 ^劑膏。將所得之焊劑膏印刷塗布於氡化鋁基板上,使用 站著力試驗機(MARUKOMU公司製)ΤΚ-1測定粘著力。結 果顯示於表5之實施例25 ^粘著力測定5點,其平均值係顯 不於表5中。另,取代第丨金屬粒子Α使用第丨金屬粒子β或 第1金屬粒子D,以與實施例丨相同之步驟製作焊劑膏,同 樣測定粘著力。結果分別顯示於表5之實施例26及π。藉 此可知,所使用之金屬粒子之平均粒徑與如金屬粒子d(平 均粒徑:30.2 μηι)般之較大之情形相&,該平均粒徑例如 為8.1 μιη及15.1 μιη時,可獲得作為顯示高粘著力值之焊劑 膏的粘著力強之優點。 [實施例28及29] 以質量比100 : 186混合第1金屬粒子a與第2金屬粒子 作為金屬填料成份。接著混合金屬填料成份9〇質量 %、及助焊劑(B)10質量%,以與實施例1相同之步驟製作 焊劑膏。使用所得之焊劑膏’與實施例1(4)相同,於氮氛 圍下,以峰值溫度16(rc進行回流熱處理,製作Cu晶片接 合基板,測定常溫及26〇t加熱時之接合強度。結果顯示 於表6之實施例28。 146300.doc •24· 1378841 另,以質量比1〇〇: 186混合第丨金屬粒子A與第2金屬粒 子B,作為金屬填料成份。接著混合金屬填料成份89 5質 量。/。、及助焊劑剛.5質量% ’以與實施例i相同之步驟製 作焊劑,與實施例1(4)相同,於氮氛圍下,以峰值溫产 進行回流熱處理,製作μ片接合基板測定;^ 及26(TC加熱時之接合強度。結果係顯示於表仏實施二 中。, [比較例5及6] 以質量比100 : 186混合(^粉(福田金屬箔粉工業社製,[Examples 23 to 24J In place of the first metal particles A of Example 22, the same evaluation was carried out using the i-th metal particles 8 or the first metal particles C. The results are shown in Table 4. As is clear from the results of Fig. 4, when the α-based particles c having an average particle diameter of 27 (4) were used, it was observed that a large amount of floating particles in the flux layer of the upper portion of the solder at the joint portion was used, and an average particle size of the metal particles was used. When the first metal particle of the first diameter of 15.1 μm is the first metal particle, it is known that the number of floating particles generated in the flux layer is small. l Thus, when the diameter of the metal particles used is small (for example, 2_7 μηη), it is known that the average particle size is, for example, μ 146300.doc -23- 1378841 and 15.1 μπι. The advantage that floating particles are less likely to be generated in the flux layer can be obtained. [Examples 25 to 27] The i-th metal particles VIII and the second metal particles 〇B were mixed at a mass ratio of 1 〇〇: 186 as a metal filler component. Next, a metal filler component of 89 5 mass = and a flux (Β) of 1 〇·5 mass% were mixed, and a paste was prepared in the same manner as in the example. The obtained solder paste was printed and applied on an aluminum telluride substrate, and the adhesion was measured using a standing tester (manufactured by MARUKOMU Co., Ltd.) ΤΚ-1. The results are shown in Example 25 of Table 5. The adhesion was measured at 5 points, and the average value thereof was not shown in Table 5. Further, in place of the second metal particles, the second metal particles β or the first metal particles D were used, and a solder paste was prepared in the same manner as in Example ,, and the adhesion was measured in the same manner. The results are shown in Example 26 and π of Table 5, respectively. From this, it can be seen that the average particle diameter of the metal particles used is the same as that of the metal particles d (average particle diameter: 30.2 μηι), and the average particle diameter is, for example, 8.1 μm and 15.1 μm. The advantage of being strong as a solder paste showing a high adhesion value is obtained. [Examples 28 and 29] The first metal particles a and the second metal particles were mixed at a mass ratio of 100:186 as a metal filler component. Then, a flux paste was prepared by the same procedure as in Example 1 by mixing a metal filler component of 9% by mass and a flux (B) of 10% by mass. Using the obtained solder paste as in Example 1 (4), a Cu wafer bonded substrate was prepared by a reflow heat treatment at a peak temperature of 16 (rc) under a nitrogen atmosphere, and the joint strength at room temperature and heating at 26 〇t was measured. Example 28 in Table 6. 146300.doc • 24· 1378841 In addition, the second metal particles A and the second metal particles B are mixed as a metal filler component at a mass ratio of 1 〇〇: 186. Then the metal filler component is mixed 89 5 Quality: /., and flux just 5% by mass 'The flux was prepared in the same manner as in Example i, and in the same manner as in Example 1 (4), a reflow heat treatment was performed under a nitrogen atmosphere at a peak temperature to prepare a μ piece. Bonded substrate measurement; ^ and 26 (bonding strength at TC heating. The results are shown in Table 2, [Comparative Examples 5 and 6] Mixed at a mass ratio of 100: 186 (^Flour (Futian Metal Foil Powder Industry Co., Ltd.) system,

Cu-HWQ平均粒徑15 μιη)與第2金屬粒子A’作為金屬填 料成份。接著混合金屬填料成份9〇質量%、及助焊劑(Β)ι〇 質量%,以與實施例⑷同之步驟製作焊劑膏,與實施例 1(4)相同’使用所得之膏,於氮氛圍下’以峰值溫度16代 進行回流熱處理,製作Cu晶片接合基板,測定常溫及 260°C加熱時之接合強度。結果顯示於表6之比較例5中。 另,以質量比100: 186混合。粉(福田金屬落粉工業社 製,Cu-HWQ IS μηΐ)與第2金屬粒子3 ’作為金屬填料成 份。接著混合金屬填料成份89.5質量%、及助焊劑(Β)1〇 5 質量%,以與實施例1相同之步驟製作焊劑膏。與實施例 1(4)相同,使用所得之膏,於氮氛圍下,以峰值溫度16〇乞 進行回流熱處理’製作Cu晶片接合基板,測定常溫及 2 6 0 C加熱時之接合強度。結果係顯示於表6之比較例6 中〇 比較表6之實施例28與比較例5或實施例29與比較例6, 146300.doc -25- 1378841 與苐2金屬之Bi-42Sn及Cu粉之組合,可知使用第2金屬之 Bi-42Sn與第1金屬粒子A之組合’在常溫下之接合強度明 顯優良。 [比較例7及8] 為與本發明人等之先前技術(日本特開2008-183582號公 報)比較而進行以下評估。 第3金屬粒子之製造 將Ag粒子1.0kg(純度99%質量以上)、Bi粒子2 〇 kg(純度 99%質量以上)、Cu粒子1.5 kg(純度99%質量以上)、化粒子 2.0 kg(純度99%質夏以上)、Sn粒子3 5 kg(純度99%質量以 上)(即目標組成元素,Ag :丨〇質量。/〇、Bi : 2〇質量%、 Cu . 15質量%、In : 20質量%、及Sn · 35質量%)置入石墨 坩堝,在99體積。/〇以上之氦氛圍τ,藉由高頻感應加熱裝 置加熱至1400 C而熔解。接著,從坩堝前端將該熔融金屬 導入氦氛圍之噴霧槽内後,從設於坩堝前端附近之氣體噴 嘴喷出氦氣(純度99體積%以上,氧濃度未達〇.丨體積%,壓 力2.5 MPa)進行霧化,製作第3金屬粒子。此時之冷卻速 度為2600 C /秒。將所得之第3金屬粒子以掃描型電子顯微 鏡(日立製作所(股份有限公司)製:s_27〇〇)觀察,發現其 為球狀。將該金屬粒子使用氣流式分級機(日清工程(股)製 TC-15N)以5 μηι設定進行分級,回收大粒子部份後,再次 以1 5 μπι β又疋進行分級,回收小粒子部分。以雷射繞射式 粒子彳二刀佈測定裝置(Hel〇s&r〇d〇s)測定所回收之第3 至屬粒子得知平均杻為5.5 μιη。將如此得到之第3金屬 146300.doc -26· 1378841 粒子作為。式料’進行差不掃描熱量測定。其結 在阶 '坑及3阶之吸熱峰,在阶及听之低^ 區域具有複數個熔點。 . 接著,以質量比186混合第i金屬粒子八與第3金屬 • 冑子6 ’作為金屬填料成份。接著混合金屬填料成份884 質量。/。、及助焊齊KB川.6質量%,以與實施例!相同之步驟 製作焊劑膏。與實施例i⑷相同,使用所得之膏,於氮氛 • 圍下,以峰值溫度16〇t:進行回流熱處理,製作Cu晶片接 • 合基板,測定常溫及260亡加熱時之接合強度。結果顯示 • 於表7之比較例7中。 另,以質菫比100 . 186混合Cu粉(福田金屬箔粉工業社 製,Cu-HWQ 15 μηι)與第3金屬粒子,作為金屬填料成 份。接著混合金屬填料成份88 7質量%及助焊劑(β)ιι 3質 量% ’以與實施例1相同之步驟製作焊劑膏。與實施例】⑷ 相同,於氮氛圍下,以峰值溫度16〇。〇進行回流熱處理, • 製作Cu晶片接合基板,測定常溫及26(TC加熱時之接合強 度。結果顯示於表7之比較例8中。 根據實施例28、29及比較例7,相對第1金屬粒子,取代 第2金屬粒子使用混合有第3金屬粒子之金屬填料時,可知 系溫下之接合強度較低之結果。另,將比較例7及比較例8 比較可知,接合強度均顯示較低之值,兩者大致在同等之 接合強度。即,使用第3金屬粒子時,確認與第丨金屬粒子 A之組合以及與Cu粉之組合均顯示低接合強度。 146300.doc -27- 1378841 [表i] 回流熱處理 峰值溫度 金屬填料組成(質量比) 接合強度(MPa) 第1金屬粒子A 第2金屬粒子A 常溫 260〇C 實施例1 160°C 100 300 15.4 0.35 實施例2 160°C 100 186 12.4 0.72 實施例3 160°C 100 122 10.2 0.97 實施例4 160°C 100 82 3.4 0.78 實施例5 160°C 100 54 2.4 0.48 實施例'6 180°C 100 300 15.9 0.34 實施例7 180°C 100 186 13.2 1.1 實施例8 180°C 100 122 9.8 1.7 實施例9 180°C 100 82 7.7 1.1 實施例10 180°C 100 54 3.4 0.8 比較例1 160°C 0 100 38.2 0 比較例2 180°C 0 100 44.3 0 比較例3 250〇C Sn-3.0Ag-0.5Cu 26.4 0 [表2] 回流熱處理 峰值溫度 金屬填料組成(質量比) 接合強度(MPa) 第1金屬粒子B 第2金屬粒子B 常溫 260〇C 實施例11 160°C 100 300 14 0.5 實施例12 160。。 100 186 12.4 0.9 實施例13 160°C 100 122 6.7 1.2 實施例14 160°C 100 82 3.0 0.9 實施例15 160°C 100 54 2.8 1.1 實施例16 180°C 100 300 17.1 0.7 146300.doc -28- 1378841 實施例17 180°C 100 186 14.9 1.0 實施例18 180°C 100 122 7.4 0.9 實施例19 180°C 100 82 4.8 1.0 實施例20 180°C 100 54 4.5 1.3 [表3] 零件電極間短路之發生 發生數/全數 發生率 實施例21 0/45 0% 比較例4 17/83 20.5%The Cu-HWQ average particle diameter of 15 μm) and the second metal particle A' are used as metal filler components. Then, the metal filler component was mixed at 9 mass%, and the flux (m) was mass%, and a solder paste was prepared in the same manner as in the example (4), and the obtained paste was used in a nitrogen atmosphere in the same manner as in the example 1 (4). Next, a reflow heat treatment was performed at a peak temperature of 16 generations to prepare a Cu wafer bonded substrate, and the joint strength at normal temperature and heating at 260 ° C was measured. The results are shown in Comparative Example 5 of Table 6. In addition, it is mixed with a mass ratio of 100: 186. Powder (Cu-HWQ IS μηΐ, manufactured by Futian Metal Powder Industry Co., Ltd.) and the second metal particles 3' were used as metal filler components. Then, a flux paste was prepared by mixing the metal filler component of 89.5 mass% and the flux (〇) of 1 〇 5 mass% in the same manner as in the first embodiment. In the same manner as in Example 1 (4), a paste obtained by subjecting the obtained paste to a reflow heat treatment at a peak temperature of 16 Torr in a nitrogen atmosphere was used to prepare a Cu wafer bonded substrate, and the joint strength at room temperature and heating at 260 ° C was measured. The results are shown in Comparative Example 6 of Table 6, 〇Comparative Example 28 and Comparative Example 5 or Example 29 and Comparative Example 6, 146300.doc -25-1378841 and Bi-42Sn and Cu powder of 苐2 metal. In the combination, it was found that the combination of Bi-42Sn and the first metal particles A using the second metal was excellent in bonding strength at normal temperature. [Comparative Examples 7 and 8] The following evaluations were carried out in comparison with the prior art of the present inventors (JP-A-2008-183582). Production of the third metal particles: 1.0 kg of Ag particles (purity of 99% by mass or more), 2 particles of Bi particles (purity of 99% by mass or more), 1.5 kg of Cu particles (purity of 99% by mass or more), and 2.0 kg of chemical particles (purity) 99% of the quality of summer and above), Sn particles of 3 5 kg (purity of 99% by mass or more) (ie, the target constituent element, Ag: 丨〇 mass. / 〇, Bi: 2 〇 mass%, Cu. 15 mass%, In : 20) Mass %, and Sn · 35 mass %) were placed in graphite crucible at 99 volumes. The atmosphere τ above / 〇 is melted by heating to 1400 C by a high frequency induction heating device. Next, the molten metal is introduced into the spray chamber of the helium atmosphere from the tip end of the crucible, and then helium gas is discharged from a gas nozzle provided near the tip end of the crucible (purity of 99% by volume or more, oxygen concentration is less than 〇.丨% by volume, pressure 2.5) MPa) was atomized to produce a third metal particle. The cooling rate at this time is 2600 C / sec. The obtained third metal particles were observed by a scanning electron microscope (manufactured by Hitachi, Ltd.: s_27〇〇) and found to be spherical. The metal particles were classified by a gas flow classifier (TC-15N manufactured by Nissin Engineering Co., Ltd.) at a setting of 5 μm, and a large particle fraction was recovered, and then fractionated again by 15 μπι β to recover small particle fractions. . The 3rd to genus particles recovered by the laser diffraction type particle 彳 two-knife measuring device (Hel〇s & r〇d〇s) were determined to have an average enthalpy of 5.5 μm. The third metal 146300.doc -26·1378841 particles thus obtained were used. The material was subjected to poor scanning without thermal measurement. The junction is in the end of the pit and the third-order endothermic peak, and has a plurality of melting points in the lower and lower regions. Next, the i-th metal particles VIII and the third metal scorpion 6 ′ are mixed at a mass ratio 186 as a metal filler component. The metal filler component is then mixed with 884 mass. /. And the welding of the Qichuan. 6 mass%, with the example! The same steps to make solder paste. In the same manner as in the case of the example i (4), the obtained paste was subjected to a reflow heat treatment at a peak temperature of 16 〇t under a nitrogen atmosphere to prepare a Cu wafer bonded substrate, and the joint strength at normal temperature and 260 dead heating was measured. The results are shown in Table 7 in Comparative Example 7. Further, a Cu powder (Cu-HWQ 15 μηι, manufactured by Fukuda Metal Foil Co., Ltd.) and a third metal particle were mixed at a mass ratio of 100 to 186 to form a metal filler component. Then, a flux paste was prepared by mixing the metal filler component 88 7 mass% and the flux (β) ι mass % ' in the same manner as in Example 1. In the same manner as in the example (4), the peak temperature was 16 Torr under a nitrogen atmosphere. 〇Reflow heat treatment was performed. • Cu wafer bonded substrate was prepared, and normal temperature and 26 (joint strength at TC heating were measured. The results are shown in Comparative Example 8 of Table 7. According to Examples 28 and 29 and Comparative Example 7, the first metal was used. When the metal filler in which the third metal particles were mixed was used as the particles in place of the second metal particles, it was found that the bonding strength at the system temperature was low. Further, comparing Comparative Example 7 and Comparative Example 8, it was found that the joint strength was low. The value is approximately the same as the joint strength. That is, when the third metal particles are used, it is confirmed that the combination with the second metal particles A and the combination with the Cu powder exhibits low joint strength. 146300.doc -27- 1378841 [ Table i] Reflow heat treatment peak temperature Metal filler composition (mass ratio) Bonding strength (MPa) First metal particle A Second metal particle A Normal temperature 260 〇C Example 1 160 ° C 100 300 15.4 0.35 Example 2 160 ° C 100 186 12.4 0.72 Example 3 160 ° C 100 122 10.2 0.97 Example 4 160 ° C 100 82 3.4 0.78 Example 5 160 ° C 100 54 2.4 0.48 Example '6 180 ° C 100 300 15.9 0.34 Example 7 180 ° C 100 186 13.2 1.1 Example 8 180 ° C 100 122 9.8 1.7 Example 9 180 ° C 100 82 7.7 1.1 Example 10 180 ° C 100 54 3.4 0.8 Comparative Example 1 160 ° C 0 100 38.2 0 Comparative Example 2 180 ° C 0 100 44.3 0 Comparative Example 3 250 〇C Sn-3.0Ag-0.5Cu 26.4 0 [Table 2] Reflow heat treatment peak temperature Metal filler composition (mass ratio) Bonding strength (MPa) First metal particle B Second metal particle B Normal temperature 260 〇 C Example 11 160 ° C 100 300 14 0.5 Example 12 160. 100 186 12.4 0.9 Example 13 160 ° C 100 122 6.7 1.2 Example 14 160 ° C 100 82 3.0 0.9 Example 15 160 ° C 100 54 2.8 1.1 Implementation Example 16 180 ° C 100 300 17.1 0.7 146300.doc -28- 1378841 Example 17 180 ° C 100 186 14.9 1.0 Example 18 180 ° C 100 122 7.4 0.9 Example 19 180 ° C 100 82 4.8 1.0 Example 20 180 °C 100 54 4.5 1.3 [Table 3] Number of occurrences of short circuit between parts and the total number of occurrences Example 21 0/45 0% Comparative Example 4 17/83 20.5%

[表4] 第1金屬粒子(質量比) 第2金屬粒 子(質量比) 浮游粒 子數(個) 第1金屬 粒子A 第1金屬 粒子B 第1金屬 粒子C 第2金屬 粒子A 實施例22 100 0 0 186 7 實施例23 0 100 0 34 實施例24 0 0 100 878[Table 4] First metal particles (mass ratio) Second metal particles (mass ratio) Number of floating particles (s) First metal particles A First metal particles B First metal particles C Second metal particles A Example 22 100 0 0 186 7 Example 23 0 100 0 34 Example 24 0 0 100 878

[表5] 第1金屬粒子(質量比) 第2金屬粒 子(質量比) 粘著力 (g · 0 第1金屬 粒子A 第1金屬 粒子B 第1金屬 粒子D 第2金屬 粒子B 實施例25 100 0 0 186 148 實施例26 0 100 0 160 實施例27 0 0 100 91 146300.doc •29· 1378841 [表6] 回流熱 處理峰 值溫度 金屬填料組成(質量比) 接合強度(MPa) 第1金屬 粒子A Cu 粉 第2金屬 粒子A 第2金屬 粒子B 常溫 260〇C 實施例 28 160°C 100 0 186 0 13.5 0.86 實施例 29 160°C 100 0 0 186 26.8 0.65 比較例5 160°C 0 100 186 0 4.3 0.63 比較例6 160°C 0 100 0 186 12.4 1.3 [表7] 回流熱 處理峰 值溫度 金屬填料組成(質量比) 接合強度(MPa) 第1金屬 粒子A Cu粉 第3金屬 粒子 常溫 260〇C 比較例7 160°C 100 0 186 3.82 1.74 比較例8 160°C 0 100 186 3.48 1.51 [產業上之可利用性] 本發明之金屬填料及含有此之無鉛焊劑,可應用於後步 驟中接受複數次熱處理之用途(例如零件内藏基板及封裝 體等電子裝置中所使用之焊劑材,還有例如導電性接著 劑),且可實現低溫安裝。 146300.doc -30-[Table 5] First metal particle (mass ratio) Second metal particle (mass ratio) Adhesion (g · 0 First metal particle A First metal particle B First metal particle D Second metal particle B Example 25 100 0 0 186 148 Example 26 0 100 0 160 Example 27 0 0 100 91 146300.doc •29· 1378841 [Table 6] Reflow heat treatment peak temperature Metal filler composition (mass ratio) Bonding strength (MPa) First metal particle A Cu powder second metal particle A second metal particle B normal temperature 260 〇C Example 28 160 ° C 100 0 186 0 13.5 0.86 Example 29 160 ° C 100 0 0 186 26.8 0.65 Comparative Example 5 160 ° C 0 100 186 0 4.3 0.63 Comparative Example 6 160°C 0 100 0 186 12.4 1.3 [Table 7] Reflow heat treatment peak temperature Metal filler composition (mass ratio) Bonding strength (MPa) First metal particle A Cu powder 3rd metal particle normal temperature 260 〇 C comparison Example 7 160 ° C 100 0 186 3.82 1.74 Comparative Example 8 160 ° C 0 100 186 3.48 1.51 [Industrial Applicability] The metal filler of the present invention and the lead-free solder containing the same can be applied to the subsequent steps for a plurality of times. The purpose of heat treatment (such as the built-in substrate of the part and The electronic device used in the solder material loaded the like, as well as for example a conductive adhesive), and may be mounted to achieve a low temperature. 146300.doc -30-

Claims (1)

七、申請專利範圍: 種金屬填料’其包含第1金屬粒子與第2金屬粒子之混 合體, 刚述第1金屬粒子係含有作為主成份之以最高質量比 子在之元素Cu’ 進而含有卜及〜之^合金粒子; 刖述第2金屬粒子係含有Bi 40〜70質量%、及自包含 Ag Cu、In及sn之群組所選出的丨種以上金屬3〇〜6〇質量 %之B i合金粒子; 旦且别述第2金屬粒子之量相對前述第丨金屬粒子1〇〇質 量份為40〜300質量份。 2·如上請求項1之金屬填料,其中前述第2金屬粒子含有 Sn 〇 3. 如請求項1或2之金屬填料,其中前述第i金屬粒子及前 述第2金屬粒子之平均粒徑均在μ-之範圍。 4. 如凊求項1或2之金屬填料,其中前述第1金屬粒子進而 含有選自Ag及Bi之1種以上之金屬。 5. 如請求項!或2之金屬填料,其中前述第i金屬粒子包含 Ag 5〜i 5質量%、Bi 2〜8質量%、cu 49〜8 i質量%、工… 質量0/〇、及Sn 10〜20質量〇/〇, 别述第1金屬粒子在差示掃描熱量測定(Dsc)下具有 於230〜WC範圍内觀察到之至少一個發熱峰值,及於 〜53(TC範圍内觀測到之至少—個吸熱峰值。 6. 一種無料劑,其含有如請求項!或2之金屬填料。 7. 種連接構造體’其具有第1<f子零件、第2電子零件、 146300.doc 1378841 以及接合前述第〗電子 部,前述焊劑接合部係 行回流熱處理而形成。 零件與第2雷j # 弟電子零件之焊劑接合 藉由將如請求項6之無鉛烊劑進 8. 種零件搭載基板,其具有基板、及搭載於前述基板上 之如請求項7之連接構造體。 I46300.doc7. Patent application scope: A metal filler comprising a mixture of a first metal particle and a second metal particle, the first metal particle containing the element having the highest mass ratio as the main component, Cu' And the alloy particles of the second metal particles are contained in the group of the second metal particles containing Bi 40 to 70% by mass, and the metal selected from the group consisting of Ag Cu, In and Sn, 3〇~6〇% by mass of B i alloy particles; the amount of the second metal particles is 40 to 300 parts by mass based on 1 part by mass of the second metal particles. The metal filler according to claim 1, wherein the second metal particle contains Sn 〇 3. The metal filler according to claim 1 or 2, wherein an average particle diameter of the ith metal particle and the second metal particle are both - The scope. 4. The metal filler according to claim 1 or 2, wherein the first metal particles further contain one or more metals selected from the group consisting of Ag and Bi. 5. The metal filler according to claim 2 or 2, wherein the i-th metal particle comprises Ag 5 to i 5 mass%, Bi 2 to 8 mass%, cu 49 to 8 i mass%, mass... 0/〇, and Sn 10 to 20 mass 〇 / 〇, the first metal particles have at least one heat peak observed in the range of 230 to WC under differential scanning calorimetry (Dsc), and observed in the range of ~53 (TC range) At least one endothermic peak. 6. A materialless agent containing a metal filler as claimed in claim 2 or 2. 7. A connecting structure having a first <f sub-part, a second electronic part, 146300.doc 1378841 And bonding the soldering portion to the electronic component, and the flux bonding portion is formed by reflow heat treatment. The flux bonding between the component and the second electronic component is performed by placing the lead-free soldering agent according to claim 6 into the component mounting substrate. And having a substrate and a connection structure as claimed in claim 7 mounted on the substrate. I46300.doc
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