TWI377783B - High power doherty amplifier using multi-stage modules - Google Patents
High power doherty amplifier using multi-stage modules Download PDFInfo
- Publication number
- TWI377783B TWI377783B TW095109664A TW95109664A TWI377783B TW I377783 B TWI377783 B TW I377783B TW 095109664 A TW095109664 A TW 095109664A TW 95109664 A TW95109664 A TW 95109664A TW I377783 B TWI377783 B TW I377783B
- Authority
- TW
- Taiwan
- Prior art keywords
- amplifier
- stage
- power
- peak
- amplification
- Prior art date
Links
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- 229910052751 metal Inorganic materials 0.000 claims description 7
- 239000002184 metal Substances 0.000 claims description 7
- 239000000758 substrate Substances 0.000 claims description 7
- 238000012053 enzymatic serum creatinine assay Methods 0.000 claims description 4
- 238000004377 microelectronic Methods 0.000 claims description 4
- 238000000926 separation method Methods 0.000 claims description 3
- 230000003321 amplification Effects 0.000 claims 13
- 238000003199 nucleic acid amplification method Methods 0.000 claims 13
- 230000008878 coupling Effects 0.000 claims 4
- 238000010168 coupling process Methods 0.000 claims 4
- 238000005859 coupling reaction Methods 0.000 claims 4
- 229910052732 germanium Inorganic materials 0.000 claims 2
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 claims 2
- 229910052734 helium Inorganic materials 0.000 claims 1
- 239000001307 helium Substances 0.000 claims 1
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 claims 1
- 238000013461 design Methods 0.000 description 6
- 238000010586 diagram Methods 0.000 description 6
- 230000005540 biological transmission Effects 0.000 description 5
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 3
- 102100040615 Homeobox protein MSX-2 Human genes 0.000 description 3
- 101000967222 Homo sapiens Homeobox protein MSX-2 Proteins 0.000 description 3
- 239000003990 capacitor Substances 0.000 description 3
- 229910052802 copper Inorganic materials 0.000 description 3
- 239000010949 copper Substances 0.000 description 3
- 230000005669 field effect Effects 0.000 description 3
- 238000005259 measurement Methods 0.000 description 3
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 238000001228 spectrum Methods 0.000 description 2
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- 230000009977 dual effect Effects 0.000 description 1
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Classifications
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
- H03F1/02—Modifications of amplifiers to raise the efficiency, e.g. gliding Class A stages, use of an auxiliary oscillation
- H03F1/0205—Modifications of amplifiers to raise the efficiency, e.g. gliding Class A stages, use of an auxiliary oscillation in transistor amplifiers
- H03F1/0288—Modifications of amplifiers to raise the efficiency, e.g. gliding Class A stages, use of an auxiliary oscillation in transistor amplifiers using a main and one or several auxiliary peaking amplifiers whereby the load is connected to the main amplifier using an impedance inverter, e.g. Doherty amplifiers
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Amplifiers (AREA)
- Transmitters (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US11/090,577 US7193473B2 (en) | 2005-03-24 | 2005-03-24 | High power Doherty amplifier using multi-stage modules |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| TW200703886A TW200703886A (en) | 2007-01-16 |
| TWI377783B true TWI377783B (en) | 2012-11-21 |
Family
ID=37024603
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW095109664A TWI377783B (en) | 2005-03-24 | 2006-03-21 | High power doherty amplifier using multi-stage modules |
Country Status (5)
| Country | Link |
|---|---|
| US (1) | US7193473B2 (enExample) |
| EP (2) | EP1861920A4 (enExample) |
| JP (2) | JP2008535321A (enExample) |
| TW (1) | TWI377783B (enExample) |
| WO (1) | WO2006102466A2 (enExample) |
Cited By (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TWI766983B (zh) * | 2017-04-24 | 2022-06-11 | 美商馬康科技解決方案控股有限公司 | 具有大的射頻及瞬時頻寬的反相杜赫功率放大器 |
| US11705869B2 (en) | 2018-10-05 | 2023-07-18 | Macom Technology Solutions Holdings, Inc. | Low-load-modulation power amplifier |
| US11716058B2 (en) | 2017-10-02 | 2023-08-01 | Macom Technology Solutions Holdings, Inc. | No-load-modulation, high-efficiency power amplifier |
| US11722101B2 (en) | 2017-02-02 | 2023-08-08 | Macom Technology Solutions Holdings, Inc. | 90-degree lumped and distributed Doherty impedance inverter |
| US11811366B2 (en) | 2017-04-24 | 2023-11-07 | Macom Technology Solutions Holdings, Inc. | Symmetrical Doherty power amplifier having improved efficiency |
| US11888448B2 (en) | 2019-12-30 | 2024-01-30 | Macom Technology Solutions Holdings, Inc. | Low-load-modulation broadband amplifier |
| US11990871B2 (en) | 2017-04-24 | 2024-05-21 | Macom Technology Solutions Holdings, Inc. | Inverted Doherty power amplifier with large RF fractional and instantaneous bandwidths |
| US12028022B2 (en) | 2020-12-10 | 2024-07-02 | Macom Technology Solutions Holdings, Inc. | Hybrid power amplifier with GaN-on-Si and GaN-on-SiC circuits |
| US12136901B2 (en) | 2017-08-14 | 2024-11-05 | Macom Technology Solutions Holdings, Inc. | Broadband, high-efficiency, non-modulating power amplifier architecture |
Families Citing this family (25)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPWO2005093948A1 (ja) * | 2004-03-26 | 2008-02-14 | 株式会社日立国際電気 | 増幅器 |
| US7847630B2 (en) * | 2004-11-05 | 2010-12-07 | Hitachi Kokusai Electric Inc. | Amplifier |
| US7362170B2 (en) * | 2005-12-01 | 2008-04-22 | Andrew Corporation | High gain, high efficiency power amplifier |
| US7541866B2 (en) * | 2006-09-29 | 2009-06-02 | Nortel Networks Limited | Enhanced doherty amplifier with asymmetrical semiconductors |
| DE102006057324A1 (de) * | 2006-12-05 | 2008-06-19 | Rohde & Schwarz Gmbh & Co. Kg | Doherty-Verstärker-System |
| EP2191567A1 (en) | 2007-09-03 | 2010-06-02 | Nxp B.V. | Multi-way doherty amplifier |
| US9479202B2 (en) * | 2008-02-19 | 2016-10-25 | Infineon Technologies Ag | System and method for burst mode amplifier |
| US7764120B2 (en) * | 2008-08-19 | 2010-07-27 | Cree, Inc. | Integrated circuit with parallel sets of transistor amplifiers having different turn on power levels |
| CN101582682B (zh) | 2009-06-12 | 2011-12-28 | 华为技术有限公司 | 一种功率放大器和发射机 |
| US8736364B2 (en) | 2009-10-13 | 2014-05-27 | Nec Corporation | Power amplifier and method of operation thereof |
| EP2393201A1 (en) | 2010-06-02 | 2011-12-07 | Nxp B.V. | Two stage doherty amplifier |
| DE102010034067A1 (de) * | 2010-08-12 | 2012-02-16 | Rohde & Schwarz Gmbh & Co. Kg | Hochfrequenzleistungsverstärker mit Doherty-Erweiterung |
| US8611834B2 (en) | 2010-11-01 | 2013-12-17 | Cree, Inc. | Matching network for transmission circuitry |
| US9071211B1 (en) * | 2011-12-15 | 2015-06-30 | Anadigics, Inc. | Compact doherty combiner |
| US8698560B2 (en) * | 2012-05-09 | 2014-04-15 | Mstar Semiconductor, Inc. | Variable-gain low noise amplifier |
| US8754710B2 (en) * | 2012-06-22 | 2014-06-17 | Mstar Semiconductor, Inc. | Low-noise amplifiers for RF receiver |
| CN202818232U (zh) * | 2012-09-18 | 2013-03-20 | 中兴通讯股份有限公司 | 一种Doherty功放电路 |
| US9007126B2 (en) | 2013-02-25 | 2015-04-14 | Intel Mobile Communications GmbH | Multi-mode amplifier system |
| US9407214B2 (en) | 2013-06-28 | 2016-08-02 | Cree, Inc. | MMIC power amplifier |
| US9030260B2 (en) * | 2013-07-19 | 2015-05-12 | Alcatel Lucent | Dual-band high efficiency Doherty amplifiers with hybrid packaged power devices |
| US10250197B1 (en) | 2017-11-06 | 2019-04-02 | Nxp Usa, Inc. | Multiple-stage power amplifiers implemented with multiple semiconductor technologies |
| EP3480945A1 (en) | 2017-11-06 | 2019-05-08 | NXP USA, Inc. | Multiple-stage power amplifiers implemented with multiple semiconductor technologies |
| US10530306B2 (en) | 2018-04-13 | 2020-01-07 | Nxp Usa, Inc. | Hybrid power amplifier circuit or system with combination low-pass and high-pass interstage circuitry and method of operating same |
| US12009788B2 (en) | 2019-03-28 | 2024-06-11 | Macom Technology Solutions Holdings, Inc. | In-transistor load modulation |
| EP4297274A1 (en) | 2022-06-24 | 2023-12-27 | Wolfspeed, Inc. | Flip chip doherty amplifier devices |
Family Cites Families (17)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TW293899B (enExample) * | 1994-10-18 | 1996-12-21 | Seiko Epson Corp | |
| JP3135195B2 (ja) * | 1994-10-26 | 2001-02-13 | 三菱電機株式会社 | マイクロ波集積回路 |
| CA2204409A1 (en) * | 1995-11-30 | 1997-05-31 | James Frank Long | Amplifier circuit and method of tuning the amplifier circuit |
| US5786727A (en) * | 1996-10-15 | 1998-07-28 | Motorola, Inc. | Multi-stage high efficiency linear power amplifier and method therefor |
| US6262629B1 (en) * | 1999-07-06 | 2001-07-17 | Motorola, Inc. | High efficiency power amplifier having reduced output matching networks for use in portable devices |
| EP1104093A1 (en) * | 1999-11-24 | 2001-05-30 | Telefonaktiebolaget Lm Ericsson | Method and apparatus for generation of a RF signal |
| US6320462B1 (en) * | 2000-04-12 | 2001-11-20 | Raytheon Company | Amplifier circuit |
| US6864742B2 (en) * | 2001-06-08 | 2005-03-08 | Northrop Grumman Corporation | Application of the doherty amplifier as a predistortion circuit for linearizing microwave amplifiers |
| US6791417B2 (en) * | 2002-01-28 | 2004-09-14 | Cree Microwave, Inc. | N-way RF power amplifier circuit with increased back-off capability and power added efficiency using selected phase lengths and output impedances |
| US6700444B2 (en) * | 2002-01-28 | 2004-03-02 | Cree Microwave, Inc. | N-way RF power amplifier with increased backoff power and power added efficiency |
| US6737922B2 (en) * | 2002-01-28 | 2004-05-18 | Cree Microwave, Inc. | N-way RF power amplifier circuit with increased back-off capability and power added efficiency using unequal input power division |
| KR100553252B1 (ko) * | 2002-02-01 | 2006-02-20 | 아바고테크놀로지스코리아 주식회사 | 휴대용 단말기의 전력 증폭 장치 |
| GB2393866A (en) * | 2002-09-06 | 2004-04-07 | Filtronic Plc | A class F Doherty amplifier using PHEMTs |
| US6822321B2 (en) * | 2002-09-30 | 2004-11-23 | Cree Microwave, Inc. | Packaged RF power transistor having RF bypassing/output matching network |
| KR100480496B1 (ko) * | 2002-11-18 | 2005-04-07 | 학교법인 포항공과대학교 | 도허티 증폭기를 이용한 신호 증폭 장치 |
| US6798295B2 (en) * | 2002-12-13 | 2004-09-28 | Cree Microwave, Inc. | Single package multi-chip RF power amplifier |
| JP2004222151A (ja) * | 2003-01-17 | 2004-08-05 | Nec Corp | ドハーティ増幅器 |
-
2005
- 2005-03-24 US US11/090,577 patent/US7193473B2/en not_active Expired - Lifetime
-
2006
- 2006-03-16 EP EP06739337A patent/EP1861920A4/en not_active Ceased
- 2006-03-16 JP JP2008503161A patent/JP2008535321A/ja active Pending
- 2006-03-16 EP EP12150378.3A patent/EP2442444B1/en active Active
- 2006-03-16 WO PCT/US2006/010498 patent/WO2006102466A2/en not_active Ceased
- 2006-03-21 TW TW095109664A patent/TWI377783B/zh active
-
2009
- 2009-06-29 JP JP2009153975A patent/JP2009219161A/ja active Pending
Cited By (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US11722101B2 (en) | 2017-02-02 | 2023-08-08 | Macom Technology Solutions Holdings, Inc. | 90-degree lumped and distributed Doherty impedance inverter |
| TWI766983B (zh) * | 2017-04-24 | 2022-06-11 | 美商馬康科技解決方案控股有限公司 | 具有大的射頻及瞬時頻寬的反相杜赫功率放大器 |
| US11811366B2 (en) | 2017-04-24 | 2023-11-07 | Macom Technology Solutions Holdings, Inc. | Symmetrical Doherty power amplifier having improved efficiency |
| US11843352B2 (en) | 2017-04-24 | 2023-12-12 | Macom Technology Solutions Holdings, Inc. | Inverted Doherty power amplifier with large RF and instantaneous bandwidths |
| US11990871B2 (en) | 2017-04-24 | 2024-05-21 | Macom Technology Solutions Holdings, Inc. | Inverted Doherty power amplifier with large RF fractional and instantaneous bandwidths |
| US12381515B2 (en) | 2017-04-24 | 2025-08-05 | Macom Technology Solutions Holdings, Inc. | Symmetrical Doherty power amplifier having improved efficiency |
| US12136901B2 (en) | 2017-08-14 | 2024-11-05 | Macom Technology Solutions Holdings, Inc. | Broadband, high-efficiency, non-modulating power amplifier architecture |
| US11716058B2 (en) | 2017-10-02 | 2023-08-01 | Macom Technology Solutions Holdings, Inc. | No-load-modulation, high-efficiency power amplifier |
| US11705869B2 (en) | 2018-10-05 | 2023-07-18 | Macom Technology Solutions Holdings, Inc. | Low-load-modulation power amplifier |
| US11888448B2 (en) | 2019-12-30 | 2024-01-30 | Macom Technology Solutions Holdings, Inc. | Low-load-modulation broadband amplifier |
| US12028022B2 (en) | 2020-12-10 | 2024-07-02 | Macom Technology Solutions Holdings, Inc. | Hybrid power amplifier with GaN-on-Si and GaN-on-SiC circuits |
Also Published As
| Publication number | Publication date |
|---|---|
| TW200703886A (en) | 2007-01-16 |
| US7193473B2 (en) | 2007-03-20 |
| JP2008535321A (ja) | 2008-08-28 |
| EP2442444A1 (en) | 2012-04-18 |
| WO2006102466A2 (en) | 2006-09-28 |
| JP2009219161A (ja) | 2009-09-24 |
| EP1861920A4 (en) | 2009-12-02 |
| WO2006102466A3 (en) | 2007-04-05 |
| US20060214732A1 (en) | 2006-09-28 |
| EP1861920A2 (en) | 2007-12-05 |
| EP2442444B1 (en) | 2014-08-20 |
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