TWI371097B - - Google Patents
Info
- Publication number
- TWI371097B TWI371097B TW096142092A TW96142092A TWI371097B TW I371097 B TWI371097 B TW I371097B TW 096142092 A TW096142092 A TW 096142092A TW 96142092 A TW96142092 A TW 96142092A TW I371097 B TWI371097 B TW I371097B
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- Taiwan
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Classifications
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- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
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- H01L25/065—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L27/00
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- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76898—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics formed through a semiconductor substrate
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- H01L2924/1531—Connection portion the connection portion being formed only on the surface of the substrate opposite to the die mounting surface
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- H01L2924/1901—Structure
- H01L2924/1904—Component type
- H01L2924/19043—Component type being a resistor
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- Engineering & Computer Science (AREA)
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- Condensed Matter Physics & Semiconductors (AREA)
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- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
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JP2006329179A JP4415984B2 (ja) | 2006-12-06 | 2006-12-06 | 半導体装置の製造方法 |
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KR101494591B1 (ko) | 2007-10-30 | 2015-02-23 | 삼성전자주식회사 | 칩 적층 패키지 |
US8138036B2 (en) * | 2008-08-08 | 2012-03-20 | International Business Machines Corporation | Through silicon via and method of fabricating same |
JPWO2010026956A1 (ja) * | 2008-09-02 | 2012-02-02 | 日本電気株式会社 | 半導体装置及びその製造方法 |
US8513119B2 (en) * | 2008-12-10 | 2013-08-20 | Taiwan Semiconductor Manufacturing Company, Ltd. | Method of forming bump structure having tapered sidewalls for stacked dies |
US20100171197A1 (en) * | 2009-01-05 | 2010-07-08 | Hung-Pin Chang | Isolation Structure for Stacked Dies |
US7986048B2 (en) * | 2009-02-18 | 2011-07-26 | Stats Chippac Ltd. | Package-on-package system with through vias and method of manufacture thereof |
KR101583719B1 (ko) * | 2009-07-21 | 2016-01-11 | 삼성전자주식회사 | 반도체 패키지 및 그 제조 방법 |
US8441123B1 (en) * | 2009-08-13 | 2013-05-14 | Amkor Technology, Inc. | Semiconductor device with metal dam and fabricating method |
US8791549B2 (en) | 2009-09-22 | 2014-07-29 | Taiwan Semiconductor Manufacturing Company, Ltd. | Wafer backside interconnect structure connected to TSVs |
US8466059B2 (en) | 2010-03-30 | 2013-06-18 | Taiwan Semiconductor Manufacturing Company, Ltd. | Multi-layer interconnect structure for stacked dies |
US8492878B2 (en) * | 2010-07-21 | 2013-07-23 | International Business Machines Corporation | Metal-contamination-free through-substrate via structure |
US9640437B2 (en) | 2010-07-23 | 2017-05-02 | Tessera, Inc. | Methods of forming semiconductor elements using micro-abrasive particle stream |
US8796135B2 (en) * | 2010-07-23 | 2014-08-05 | Tessera, Inc. | Microelectronic elements with rear contacts connected with via first or via middle structures |
US9437561B2 (en) | 2010-09-09 | 2016-09-06 | Advanced Micro Devices, Inc. | Semiconductor chip with redundant thru-silicon-vias |
US8847380B2 (en) | 2010-09-17 | 2014-09-30 | Tessera, Inc. | Staged via formation from both sides of chip |
KR101697573B1 (ko) * | 2010-11-29 | 2017-01-19 | 삼성전자 주식회사 | 반도체 장치, 그 제조 방법, 및 상기 반도체 장치를 포함하는 반도체 패키지 |
US8736066B2 (en) | 2010-12-02 | 2014-05-27 | Tessera, Inc. | Stacked microelectronic assemby with TSVS formed in stages and carrier above chip |
US8587126B2 (en) | 2010-12-02 | 2013-11-19 | Tessera, Inc. | Stacked microelectronic assembly with TSVs formed in stages with plural active chips |
US8853072B2 (en) | 2011-06-06 | 2014-10-07 | Micron Technology, Inc. | Methods of forming through-substrate interconnects |
US8900994B2 (en) | 2011-06-09 | 2014-12-02 | Taiwan Semiconductor Manufacturing Company, Ltd. | Method for producing a protective structure |
JP6082577B2 (ja) * | 2012-11-29 | 2017-02-15 | 株式会社アルバック | タングステン配線層の形成方法 |
US9666787B2 (en) * | 2013-05-01 | 2017-05-30 | Sony Corporation | Sensor device and electronic apparatus |
KR20150073473A (ko) * | 2013-12-23 | 2015-07-01 | 에스케이하이닉스 주식회사 | 반도체 소자 및 제조 방법 |
US9768147B2 (en) | 2014-02-03 | 2017-09-19 | Micron Technology, Inc. | Thermal pads between stacked semiconductor dies and associated systems and methods |
KR20160034698A (ko) * | 2014-09-22 | 2016-03-30 | 에스케이하이닉스 주식회사 | 반도체장치 및 이를 포함하는 반도체시스템 |
JP6419762B2 (ja) * | 2016-09-06 | 2018-11-07 | 株式会社Kokusai Electric | 半導体装置の製造方法、基板処理装置およびプログラム |
JP2018129412A (ja) * | 2017-02-09 | 2018-08-16 | ソニーセミコンダクタソリューションズ株式会社 | 半導体装置、および半導体装置の製造方法 |
US11843020B2 (en) | 2017-10-30 | 2023-12-12 | Samsung Electronics Co., Ltd. | Image sensor |
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US10950546B1 (en) * | 2019-09-17 | 2021-03-16 | Taiwan Semiconductor Manufacturing Co., Ltd. | Semiconductor device including back side power supply circuit |
KR102674033B1 (ko) | 2020-05-29 | 2024-06-13 | 삼성전자주식회사 | 반도체 장치 |
CN114512469A (zh) * | 2020-11-16 | 2022-05-17 | 长鑫存储技术有限公司 | 半导体结构及其制作方法 |
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US6239491B1 (en) * | 1998-05-18 | 2001-05-29 | Lsi Logic Corporation | Integrated circuit structure with thin dielectric between at least local interconnect level and first metal interconnect level, and process for making same |
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JP2002050736A (ja) | 2000-08-02 | 2002-02-15 | Canon Inc | Ic、icの製造方法、3次元実装ic、3次元実装icの製造方法、及びこれらic又は3次元実装icを組み込んだ電子機器 |
US7354798B2 (en) * | 2002-12-20 | 2008-04-08 | International Business Machines Corporation | Three-dimensional device fabrication method |
US6730950B1 (en) * | 2003-01-07 | 2004-05-04 | Texas Instruments Incorporated | Local interconnect using the electrode of a ferroelectric |
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US6908856B2 (en) * | 2003-04-03 | 2005-06-21 | Interuniversitair Microelektronica Centrum (Imec) | Method for producing electrical through hole interconnects and devices made thereof |
KR100594229B1 (ko) * | 2003-09-19 | 2006-07-03 | 삼성전자주식회사 | 반도체 패키지 및 그 제조방법 |
JP2005243689A (ja) | 2004-02-24 | 2005-09-08 | Canon Inc | 半導体チップの製造方法および半導体装置 |
TW200535918A (en) | 2004-03-09 | 2005-11-01 | Japan Science & Tech Agency | Semiconductor device and methods for fabricating the same, semiconductor system having laminated structure, semiconductor interposer, and semiconductor system |
JP4327644B2 (ja) * | 2004-03-31 | 2009-09-09 | Necエレクトロニクス株式会社 | 半導体装置の製造方法 |
JP3897036B2 (ja) | 2004-07-27 | 2007-03-22 | 株式会社ザイキューブ | 半導体集積回路装置およびその製造方法 |
CN100463584C (zh) * | 2004-11-05 | 2009-02-18 | 财团法人工业技术研究院 | 孔柱分割式连通孔结构与其制造方法 |
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