TWI370956B - Dense opc - Google Patents

Dense opc

Info

Publication number
TWI370956B
TWI370956B TW095135534A TW95135534A TWI370956B TW I370956 B TWI370956 B TW I370956B TW 095135534 A TW095135534 A TW 095135534A TW 95135534 A TW95135534 A TW 95135534A TW I370956 B TWI370956 B TW I370956B
Authority
TW
Taiwan
Prior art keywords
opc
dense
dense opc
Prior art date
Application number
TW095135534A
Other languages
English (en)
Other versions
TW200720851A (en
Inventor
Nicolas B Cobb
Dragos Dudau
Original Assignee
Mentor Graphics Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mentor Graphics Corp filed Critical Mentor Graphics Corp
Publication of TW200720851A publication Critical patent/TW200720851A/zh
Application granted granted Critical
Publication of TWI370956B publication Critical patent/TWI370956B/zh

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70491—Information management, e.g. software; Active and passive control, e.g. details of controlling exposure processes or exposure tool monitoring processes
    • G03F7/705—Modelling or simulating from physical phenomena up to complete wafer processes or whole workflow in wafer productions
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/36—Masks having proximity correction features; Preparation thereof, e.g. optical proximity correction [OPC] design processes
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70425—Imaging strategies, e.g. for increasing throughput or resolution, printing product fields larger than the image field or compensating lithography- or non-lithography errors, e.g. proximity correction, mix-and-match, stitching or double patterning
    • G03F7/70433—Layout for increasing efficiency or for compensating imaging errors, e.g. layout of exposure fields for reducing focus errors; Use of mask features for increasing efficiency or for compensating imaging errors
    • G03F7/70441—Optical proximity correction [OPC]

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)
  • Ultra Sonic Daignosis Equipment (AREA)
  • Image Processing (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
TW095135534A 2005-09-27 2006-09-26 Dense opc TWI370956B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US11/236,208 US7434199B2 (en) 2005-09-27 2005-09-27 Dense OPC

Publications (2)

Publication Number Publication Date
TW200720851A TW200720851A (en) 2007-06-01
TWI370956B true TWI370956B (en) 2012-08-21

Family

ID=35695842

Family Applications (1)

Application Number Title Priority Date Filing Date
TW095135534A TWI370956B (en) 2005-09-27 2006-09-26 Dense opc

Country Status (5)

Country Link
US (1) US7434199B2 (zh)
EP (1) EP1929373A1 (zh)
JP (3) JP2009510517A (zh)
TW (1) TWI370956B (zh)
WO (1) WO2007040544A1 (zh)

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US7293249B2 (en) * 2002-01-31 2007-11-06 Juan Andres Torres Robles Contrast based resolution enhancement for photolithographic processing
WO2005111874A2 (en) 2004-05-07 2005-11-24 Mentor Graphics Corporation Integrated circuit layout design methodology with process variation bands
US7240305B2 (en) 2004-06-02 2007-07-03 Lippincott George P OPC conflict identification and edge priority system
US8037429B2 (en) * 2005-03-02 2011-10-11 Mentor Graphics Corporation Model-based SRAF insertion
US7712068B2 (en) * 2006-02-17 2010-05-04 Zhuoxiang Ren Computation of electrical properties of an IC layout
JP4832201B2 (ja) * 2006-07-24 2011-12-07 大日本スクリーン製造株式会社 基板処理装置
JP4866683B2 (ja) * 2006-08-25 2012-02-01 富士通セミコンダクター株式会社 半導体デバイスの製造方法、データ作成装置、データ作成方法、およびプログラム
US8056022B2 (en) * 2006-11-09 2011-11-08 Mentor Graphics Corporation Analysis optimizer
US7966585B2 (en) 2006-12-13 2011-06-21 Mentor Graphics Corporation Selective shielding for multiple exposure masks
US7802226B2 (en) * 2007-01-08 2010-09-21 Mentor Graphics Corporation Data preparation for multiple mask printing
US7799487B2 (en) * 2007-02-09 2010-09-21 Ayman Yehia Hamouda Dual metric OPC
US7739650B2 (en) * 2007-02-09 2010-06-15 Juan Andres Torres Robles Pre-bias optical proximity correction
US8713483B2 (en) 2007-06-05 2014-04-29 Mentor Graphics Corporation IC layout parsing for multiple masks
US7805699B2 (en) * 2007-10-11 2010-09-28 Mentor Graphics Corporation Shape-based photolithographic model calibration
NL2003716A (en) * 2008-11-24 2010-05-26 Brion Tech Inc Harmonic resist model for use in a lithographic apparatus and a device manufacturing method.
US8321818B2 (en) * 2009-06-26 2012-11-27 International Business Machines Corporation Model-based retargeting of layout patterns for sub-wavelength photolithography
US8146026B2 (en) * 2009-11-17 2012-03-27 International Business Machines Corporation Simultaneous photolithographic mask and target optimization
US8230372B2 (en) * 2009-12-03 2012-07-24 International Business Machines Corporation Retargeting for electrical yield enhancement
US8331646B2 (en) * 2009-12-23 2012-12-11 International Business Machines Corporation Optical proximity correction for transistors using harmonic mean of gate length
JP5460479B2 (ja) * 2010-06-21 2014-04-02 株式会社日立ハイテクノロジーズ パターン寸法測定装置及び輪郭線形成装置
US8415077B2 (en) 2010-08-13 2013-04-09 International Business Machines Corporation Simultaneous optical proximity correction and decomposition for double exposure lithography
JP5501161B2 (ja) * 2010-08-31 2014-05-21 株式会社日立ハイテクノロジーズ 画像処理装置、及びコンピュータプログラム
CN102486606B (zh) * 2010-12-03 2013-03-27 中芯国际集成电路制造(上海)有限公司 光刻方法
CN103105726B (zh) * 2011-11-11 2015-04-01 中芯国际集成电路制造(上海)有限公司 布局图形校正方法
US8510687B1 (en) * 2012-03-01 2013-08-13 Taiwan Semiconductor Manufacturing Company, Ltd. Error diffusion and grid shift in lithography
US9646220B2 (en) * 2013-11-25 2017-05-09 GlobalFoundries, Inc. Methods and media for averaging contours of wafer feature edges
CN103605265B (zh) * 2013-11-26 2015-11-18 上海宏盾防伪材料有限公司 一种基于矢量曲线路径的象元可变角度的曲线光刻加工系统及光刻方法
US8881070B1 (en) * 2014-02-18 2014-11-04 Mentor Graphics Corporation Optical proximity correction based on edge fragment correlation
CN106483758B (zh) * 2015-09-02 2019-08-20 无锡华润上华科技有限公司 光学邻近效应修正方法和系统
KR102481295B1 (ko) 2015-11-12 2022-12-27 삼성전자주식회사 광 근접 보정을 수행하여 마스크를 제작하는 방법
CN108319113B (zh) * 2018-01-31 2021-01-08 宁波大学 一种玻璃毛细管中加工微结构的变形矫正方法
CN112433441A (zh) * 2019-08-26 2021-03-02 长鑫存储技术有限公司 Opc修正方法及opc修正装置
KR20210028326A (ko) 2019-09-03 2021-03-12 삼성전자주식회사 마스크 레이아웃의 보정 방법 및 이를 이용한 반도체 장치의 제조방법
CN111367149B (zh) * 2020-04-10 2021-04-20 联合微电子中心有限责任公司 曲线图形光学邻近修正方法
CN112015045B (zh) * 2020-08-31 2023-11-17 东方晶源微电子科技（北京）有限公司 一种掩模优化方法及电子设备

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Also Published As

Publication number Publication date
US7434199B2 (en) 2008-10-07
EP1929373A1 (en) 2008-06-11
WO2007040544A1 (en) 2007-04-12
JP2015028668A (ja) 2015-02-12
JP2009510517A (ja) 2009-03-12
TW200720851A (en) 2007-06-01
JP2012088745A (ja) 2012-05-10
US20070074143A1 (en) 2007-03-29

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