TWI370904B - Integrated circuit, system and method for measuring negative bias thermal instability - Google Patents

Integrated circuit, system and method for measuring negative bias thermal instability

Info

Publication number
TWI370904B
TWI370904B TW094119808A TW94119808A TWI370904B TW I370904 B TWI370904 B TW I370904B TW 094119808 A TW094119808 A TW 094119808A TW 94119808 A TW94119808 A TW 94119808A TW I370904 B TWI370904 B TW I370904B
Authority
TW
Taiwan
Prior art keywords
integrated circuit
negative bias
thermal instability
measuring negative
bias thermal
Prior art date
Application number
TW094119808A
Other languages
English (en)
Other versions
TW200604540A (en
Inventor
Shingo Suzuki
Original Assignee
Intellectual Venture Funding Llc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Intellectual Venture Funding Llc filed Critical Intellectual Venture Funding Llc
Publication of TW200604540A publication Critical patent/TW200604540A/zh
Application granted granted Critical
Publication of TWI370904B publication Critical patent/TWI370904B/zh

Links

Classifications

    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
    • G01R31/28—Testing of electronic circuits, e.g. by signal tracer
    • G01R31/2851—Testing of integrated circuits [IC]
    • G01R31/2855—Environmental, reliability or burn-in testing
    • G01R31/2856—Internal circuit aspects, e.g. built-in test features; Test chips; Measuring material aspects, e.g. electro migration [EM]
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
    • G01R31/28—Testing of electronic circuits, e.g. by signal tracer
    • G01R31/2851—Testing of integrated circuits [IC]
    • G01R31/2884—Testing of integrated circuits [IC] using dedicated test connectors, test elements or test circuits on the IC under test
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
    • G01R31/28—Testing of electronic circuits, e.g. by signal tracer
    • G01R31/30—Marginal testing, e.g. by varying supply voltage
    • G01R31/3004—Current or voltage test
    • G01R31/3008—Quiescent current [IDDQ] test or leakage current test
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
    • H01L22/30—Structural arrangements specially adapted for testing or measuring during manufacture or treatment, or specially adapted for reliability measurements
    • H01L22/34—Circuits for electrically characterising or monitoring manufacturing processes, e. g. whole test die, wafers filled with test structures, on-board-devices incorporated on each die, process control monitors or pad structures thereof, devices in scribe line
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
    • G01R31/26—Testing of individual semiconductor devices
    • G01R31/2607—Circuits therefor
    • G01R31/2621—Circuits therefor for testing field effect transistors, i.e. FET's
    • G01R31/2628—Circuits therefor for testing field effect transistors, i.e. FET's for measuring thermal properties thereof
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
    • G01R31/28—Testing of electronic circuits, e.g. by signal tracer
    • G01R31/2851—Testing of integrated circuits [IC]
    • G01R31/2855—Environmental, reliability or burn-in testing
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/30—Technical effects
    • H01L2924/301—Electrical effects
    • H01L2924/3011—Impedance
TW094119808A 2004-06-16 2005-06-15 Integrated circuit, system and method for measuring negative bias thermal instability TWI370904B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US10/870,752 US7126365B2 (en) 2002-04-16 2004-06-16 System and method for measuring negative bias thermal instability with a ring oscillator

Publications (2)

Publication Number Publication Date
TW200604540A TW200604540A (en) 2006-02-01
TWI370904B true TWI370904B (en) 2012-08-21

Family

ID=35044698

Family Applications (1)

Application Number Title Priority Date Filing Date
TW094119808A TWI370904B (en) 2004-06-16 2005-06-15 Integrated circuit, system and method for measuring negative bias thermal instability

Country Status (5)

Country Link
US (1) US7126365B2 (zh)
JP (1) JP4974886B2 (zh)
CN (1) CN1997905B (zh)
TW (1) TWI370904B (zh)
WO (1) WO2006002400A1 (zh)

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US7315178B1 (en) * 2002-04-16 2008-01-01 Transmeta Corporation System and method for measuring negative bias thermal instability with a ring oscillator
US7212022B2 (en) * 2002-04-16 2007-05-01 Transmeta Corporation System and method for measuring time dependent dielectric breakdown with a ring oscillator
US7330080B1 (en) 2004-11-04 2008-02-12 Transmeta Corporation Ring based impedance control of an output driver
US7414485B1 (en) 2005-12-30 2008-08-19 Transmeta Corporation Circuits, systems and methods relating to dynamic ring oscillators
US7642866B1 (en) 2005-12-30 2010-01-05 Robert Masleid Circuits, systems and methods relating to a dynamic dual domino ring oscillator
US7495519B2 (en) * 2007-04-30 2009-02-24 International Business Machines Corporation System and method for monitoring reliability of a digital system
US7759962B2 (en) * 2008-10-16 2010-07-20 Taiwan Semiconductor Manufacturing Company, Ltd. Methodology for bias temperature instability test
CN102073004B (zh) * 2009-11-25 2013-07-10 北京大学 测试半导体器件可靠性的方法
CN101915625B (zh) * 2010-07-14 2012-07-25 北京北大众志微系统科技有限责任公司 温度传感器
US8587383B2 (en) 2011-12-07 2013-11-19 International Business Machines Corporation Measuring bias temperature instability induced ring oscillator frequency degradation
CN102495352B (zh) * 2011-12-27 2014-06-11 复旦大学 一种集成电路应力退化的多功能测试电路和测试方法
CN102590735B (zh) * 2012-02-16 2014-10-29 复旦大学 一种集成电路可靠性测试电路与测试方法
CN103513173B (zh) * 2012-06-29 2016-04-20 复旦大学 基于压控振荡器的bti测试装置及其测试方法
US9823990B2 (en) 2012-09-05 2017-11-21 Nvidia Corporation System and process for accounting for aging effects in a computing device
CN103792475B (zh) * 2012-11-02 2016-08-03 中芯国际集成电路制造(上海)有限公司 负偏压温度不稳定性检测电路及其检测方法
US9939883B2 (en) 2012-12-27 2018-04-10 Nvidia Corporation Supply-voltage control for device power management
US9083323B2 (en) * 2013-02-11 2015-07-14 Qualcomm Incorporated Integrated circuit identification and dependability verification using ring oscillator based physical unclonable function and age detection circuitry
US9602083B2 (en) 2013-07-03 2017-03-21 Nvidia Corporation Clock generation circuit that tracks critical path across process, voltage and temperature variation
US9766649B2 (en) 2013-07-22 2017-09-19 Nvidia Corporation Closed loop dynamic voltage and frequency scaling
US10103719B2 (en) 2013-07-22 2018-10-16 Nvidia Corporation Integrated voltage regulator with in-built process, temperature and aging compensation
CN103439644B (zh) * 2013-08-13 2015-09-23 哈尔滨工业大学 一种SRAM-based FPGA退化测试系统
US9857409B2 (en) 2013-08-27 2018-01-02 Synopsys, Inc. Negative bias thermal instability stress testing of transistors
US20150277393A1 (en) * 2014-04-01 2015-10-01 Qualcomm Incorporated Integrated circuit dynamic de-aging
US9817059B2 (en) * 2014-06-24 2017-11-14 Synopsys, Inc. Evaluation of thermal instability stress testing
CN105353288B (zh) * 2014-08-19 2018-07-27 龙芯中科技术有限公司 晶体管工艺波动检测系统和检测方法
US10247769B2 (en) * 2015-09-02 2019-04-02 International Business Machines Corporation Measuring individual device degradation in CMOS circuits
EP3737953A4 (en) * 2018-01-08 2021-10-13 Proteantecs Ltd. INTEGRATED CIRCUIT WORKLOAD, TEMPERATURE AND / OR SUB-THRESHOLD LEAK SENSOR
WO2020125506A1 (en) * 2018-12-21 2020-06-25 Huawei Technologies Co., Ltd. Complementary ring oscillators to monitor in-situ stress within integrated circuits
US11099224B2 (en) * 2019-05-24 2021-08-24 Marvell Israel (M.I.S.L) Ltd. Method and circuitry for semiconductor device performance characterization
CN110672943B (zh) * 2019-09-26 2022-11-08 宁波大学 基于电压比较器的老化检测传感器
CN111812485A (zh) * 2020-06-10 2020-10-23 西安电子科技大学 一种集成电路老化失效预警方法及电路
CN112444732B (zh) * 2020-11-10 2023-05-05 海光信息技术股份有限公司 一种芯片老化状态监测电路、方法、芯片及服务器
CN112212992B (zh) * 2020-12-03 2021-03-02 南京邮电大学 一种低功耗低电压数字温度传感器
CN113253088B (zh) * 2021-06-25 2021-09-28 上海瞻芯电子科技有限公司 晶体管栅氧测试装置及系统

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US5266890A (en) * 1992-06-26 1993-11-30 Unisys Corporation Test wafer for diagnosing flaws in an integrated circuit fabrication process that cause A-C defects
JPH0778856A (ja) * 1993-06-30 1995-03-20 Hitachi Ltd 半導体装置
US5811983A (en) * 1996-09-03 1998-09-22 Integrated Device Technology, Inc. Test ring oscillator
US5963043A (en) * 1997-09-17 1999-10-05 International Business Machines Corporation Method and apparatus for characterized parasitic capacitance between integrated-circuit interconnects
US6476632B1 (en) * 2000-06-22 2002-11-05 International Business Machines Corporation Ring oscillator design for MOSFET device reliability investigations and its use for in-line monitoring
US6862548B1 (en) * 2001-10-30 2005-03-01 Xilinx, Inc. Methods and circuits for measuring clock skew on programmable logic devices
US6731179B2 (en) 2002-04-09 2004-05-04 International Business Machines Corporation System and method for measuring circuit performance degradation due to PFET negative bias temperature instability (NBTI)
US6724214B2 (en) * 2002-09-13 2004-04-20 Chartered Semiconductor Manufacturing Ltd. Test structures for on-chip real-time reliability testing

Also Published As

Publication number Publication date
TW200604540A (en) 2006-02-01
US20050212543A1 (en) 2005-09-29
JP2008503882A (ja) 2008-02-07
CN1997905B (zh) 2010-12-01
JP4974886B2 (ja) 2012-07-11
US7126365B2 (en) 2006-10-24
CN1997905A (zh) 2007-07-11
WO2006002400A1 (en) 2006-01-05

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