TWI370456B - Memory diagnosing device - Google Patents

Memory diagnosing device

Info

Publication number
TWI370456B
TWI370456B TW095136911A TW95136911A TWI370456B TW I370456 B TWI370456 B TW I370456B TW 095136911 A TW095136911 A TW 095136911A TW 95136911 A TW95136911 A TW 95136911A TW I370456 B TWI370456 B TW I370456B
Authority
TW
Taiwan
Prior art keywords
diagnosing device
memory diagnosing
memory
diagnosing
Prior art date
Application number
TW095136911A
Other languages
English (en)
Other versions
TW200725632A (en
Inventor
Hiroo Kanamaru
Takuya Ishioka
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Publication of TW200725632A publication Critical patent/TW200725632A/zh
Application granted granted Critical
Publication of TWI370456B publication Critical patent/TWI370456B/zh

Links

Classifications

    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11CSTATIC STORES
    • G11C29/00Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11CSTATIC STORES
    • G11C29/00Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
    • G11C29/56External testing equipment for static stores, e.g. automatic test equipment [ATE]; Interfaces therefor
    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11CSTATIC STORES
    • G11C29/00Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
    • G11C29/02Detection or location of defective auxiliary circuits, e.g. defective refresh counters
    • G11C29/025Detection or location of defective auxiliary circuits, e.g. defective refresh counters in signal lines
    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11CSTATIC STORES
    • G11C29/00Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
    • G11C29/04Detection or location of defective memory elements, e.g. cell constructio details, timing of test signals
    • G11C29/08Functional testing, e.g. testing during refresh, power-on self testing [POST] or distributed testing
    • G11C29/10Test algorithms, e.g. memory scan [MScan] algorithms; Test patterns, e.g. checkerboard patterns 
    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11CSTATIC STORES
    • G11C29/00Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
    • G11C29/56External testing equipment for static stores, e.g. automatic test equipment [ATE]; Interfaces therefor
    • G11C29/56008Error analysis, representation of errors
    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11CSTATIC STORES
    • G11C29/00Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
    • G11C29/04Detection or location of defective memory elements, e.g. cell constructio details, timing of test signals
    • G11C29/08Functional testing, e.g. testing during refresh, power-on self testing [POST] or distributed testing
    • G11C29/12Built-in arrangements for testing, e.g. built-in self testing [BIST] or interconnection details
    • G11C2029/1202Word line control
TW095136911A 2005-11-14 2006-10-04 Memory diagnosing device TWI370456B (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2005329309 2005-11-14
PCT/JP2006/318568 WO2007055068A1 (ja) 2005-11-14 2006-09-20 メモリ診断装置

Publications (2)

Publication Number Publication Date
TW200725632A TW200725632A (en) 2007-07-01
TWI370456B true TWI370456B (en) 2012-08-11

Family

ID=38023075

Family Applications (1)

Application Number Title Priority Date Filing Date
TW095136911A TWI370456B (en) 2005-11-14 2006-10-04 Memory diagnosing device

Country Status (7)

Country Link
US (1) US7966531B2 (zh)
JP (1) JP4312818B2 (zh)
KR (1) KR100946853B1 (zh)
CN (1) CN101310343B (zh)
DE (1) DE112006002842B4 (zh)
TW (1) TWI370456B (zh)
WO (1) WO2007055068A1 (zh)

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102010002309B4 (de) * 2010-02-24 2013-04-18 Endress + Hauser Gmbh + Co. Kg Verfahren zur Überprüfung der Funktionsfähigkeit eines Speicherelements
JP2012027544A (ja) 2010-07-20 2012-02-09 Toshiba Corp ライトバックキャッシュを備える情報処理装置、及びその主メモリ診断方法
US8516315B2 (en) * 2010-09-03 2013-08-20 Stmicroelectronics International N.V. Testing of non stuck-at faults in memory
TWI467593B (zh) * 2010-09-06 2015-01-01 Fugu Tech Entpr Co Ltd 用於一非揮發性記憶體陣列之標記方法及初始化方法
JP5409936B2 (ja) * 2011-02-18 2014-02-05 三菱電機株式会社 メモリ診断装置及びメモリ診断方法及びプログラム
CN103295645B (zh) * 2012-02-23 2016-03-09 安凯(广州)微电子技术有限公司 一种动态存储器的扫描检测方法及系统
JP5986474B2 (ja) * 2012-09-28 2016-09-06 株式会社東芝 メモリ故障診断装置、メモリ故障診断方法
CN103455436B (zh) * 2013-09-23 2016-09-14 北京经纬恒润科技有限公司 一种ram检测方法及系统
CN103824600B (zh) * 2014-03-05 2017-01-04 上海华虹宏力半导体制造有限公司 存储器测试方法及装置
CN105575437A (zh) * 2014-10-10 2016-05-11 上海华虹集成电路有限责任公司 智能卡eeprom的测试方法
WO2016143077A1 (ja) * 2015-03-10 2016-09-15 三菱電機株式会社 メモリ診断装置及びメモリ診断プログラム
JP6407127B2 (ja) * 2015-11-05 2018-10-17 日立オートモティブシステムズ株式会社 電子制御装置及び電子制御方法
CN105630644B (zh) * 2015-12-18 2019-05-21 无锡飞翎电子有限公司 洗衣机中微控制单元的内存检测方法及系统
CN105788646B (zh) * 2016-03-29 2019-05-03 杭州和利时自动化有限公司 一种ram检测方法及系统
US10510431B2 (en) 2017-09-22 2019-12-17 Qualcomm Incorporated Detecting random telegraph noise defects in memory
CN110970085B (zh) * 2018-09-30 2021-08-13 长鑫存储技术有限公司 Dram良率分析系统

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JPS61222100A (ja) * 1985-03-26 1986-10-02 Sharp Corp 半導体メモリの試験方法
JPS62122000A (ja) * 1985-11-21 1987-06-03 Nec Corp 記憶素子
JP2602204B2 (ja) * 1985-11-29 1997-04-23 株式会社日立製作所 半導体メモリ装置
JP2520234B2 (ja) * 1986-05-10 1996-07-31 工業技術院長 メモリ試験装置
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JPH0773665A (ja) 1993-06-16 1995-03-17 Nec Corp 半導体メモリ装置の試験方法
US5396619A (en) 1993-07-26 1995-03-07 International Business Machines Corporation System and method for testing and remapping base memory for memory diagnostics
US6496950B1 (en) * 1999-08-11 2002-12-17 Lsi Logic Corporation Testing content addressable static memories
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WO2002021234A2 (en) * 2000-09-06 2002-03-14 Infineon Technologies Ag Bist for parallel testing of on-chip memory
JP3570388B2 (ja) 2001-04-17 2004-09-29 日本電気株式会社 メモリ診断装置及び診断方法
DE10135966B4 (de) * 2001-07-24 2015-06-03 Qimonda Ag Verfahren und Vorrichtung zum On-Chip-Testen von Speicherzellen einer integrierten Speicherschaltung
JP2003141897A (ja) 2001-10-31 2003-05-16 Matsushita Electric Ind Co Ltd メモリの検査装置および方法およびプログラム記憶媒体およびプログラム
JP2003281899A (ja) * 2002-03-22 2003-10-03 Sony Corp 半導体記憶装置とその試験方法
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CN1523367A (zh) 2003-02-17 2004-08-25 上海华园微电子技术有限公司 一种测试电可擦除电可编程存储器的性能及其故障的方法
JP2005050393A (ja) * 2003-07-29 2005-02-24 Toshiba Lsi System Support Kk 半導体装置およびその故障検出方法
CN100428364C (zh) 2004-04-07 2008-10-22 华为技术有限公司 存储器地址线测试方法

Also Published As

Publication number Publication date
KR100946853B1 (ko) 2010-03-09
US20090089631A1 (en) 2009-04-02
CN101310343A (zh) 2008-11-19
TW200725632A (en) 2007-07-01
DE112006002842T5 (de) 2008-12-11
KR20080063407A (ko) 2008-07-03
DE112006002842B4 (de) 2017-06-01
JPWO2007055068A1 (ja) 2009-04-30
CN101310343B (zh) 2014-04-30
WO2007055068A1 (ja) 2007-05-18
JP4312818B2 (ja) 2009-08-12
US7966531B2 (en) 2011-06-21

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