TWI366833B - Memory system and configurable sense amplifier - Google Patents
Memory system and configurable sense amplifierInfo
- Publication number
- TWI366833B TWI366833B TW093124961A TW93124961A TWI366833B TW I366833 B TWI366833 B TW I366833B TW 093124961 A TW093124961 A TW 093124961A TW 93124961 A TW93124961 A TW 93124961A TW I366833 B TWI366833 B TW I366833B
- Authority
- TW
- Taiwan
- Prior art keywords
- sense amplifier
- memory system
- configurable sense
- configurable
- amplifier
- Prior art date
Links
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/06—Auxiliary circuits, e.g. for writing into memory
- G11C16/22—Safety or protection circuits preventing unauthorised or accidental access to memory cells
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/56—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency
- G11C11/5621—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency using charge storage in a floating gate
- G11C11/5642—Sensing or reading circuits; Data output circuits
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C15/00—Digital stores in which information comprising one or more characteristic parts is written into the store and in which information is read-out by searching for one or more of these characteristic parts, i.e. associative or content-addressed stores
- G11C15/04—Digital stores in which information comprising one or more characteristic parts is written into the store and in which information is read-out by searching for one or more of these characteristic parts, i.e. associative or content-addressed stores using semiconductor elements
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C15/00—Digital stores in which information comprising one or more characteristic parts is written into the store and in which information is read-out by searching for one or more of these characteristic parts, i.e. associative or content-addressed stores
- G11C15/04—Digital stores in which information comprising one or more characteristic parts is written into the store and in which information is read-out by searching for one or more of these characteristic parts, i.e. associative or content-addressed stores using semiconductor elements
- G11C15/046—Digital stores in which information comprising one or more characteristic parts is written into the store and in which information is read-out by searching for one or more of these characteristic parts, i.e. associative or content-addressed stores using semiconductor elements using non-volatile storage elements
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/06—Auxiliary circuits, e.g. for writing into memory
- G11C16/26—Sensing or reading circuits; Data output circuits
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C15/00—Digital stores in which information comprising one or more characteristic parts is written into the store and in which information is read-out by searching for one or more of these characteristic parts, i.e. associative or content-addressed stores
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C2211/00—Indexing scheme relating to digital stores characterized by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C2211/56—Indexing scheme relating to G11C11/56 and sub-groups for features not covered by these groups
- G11C2211/564—Miscellaneous aspects
- G11C2211/5641—Multilevel memory having cells with different number of storage levels
Landscapes
- Engineering & Computer Science (AREA)
- Computer Security & Cryptography (AREA)
- Computer Hardware Design (AREA)
- Read Only Memory (AREA)
- Storage Device Security (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US10/659,226 US7019998B2 (en) | 2003-09-09 | 2003-09-09 | Unified multilevel cell memory |
Publications (2)
Publication Number | Publication Date |
---|---|
TW200519965A TW200519965A (en) | 2005-06-16 |
TWI366833B true TWI366833B (en) | 2012-06-21 |
Family
ID=34226940
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
TW093124961A TWI366833B (en) | 2003-09-09 | 2004-08-19 | Memory system and configurable sense amplifier |
Country Status (3)
Country | Link |
---|---|
US (3) | US7019998B2 (zh) |
CN (3) | CN1595527B (zh) |
TW (1) | TWI366833B (zh) |
Families Citing this family (64)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20040044508A1 (en) * | 2002-08-29 | 2004-03-04 | Hoffman Robert R. | Method for generating commands for testing hardware device models |
US7779212B2 (en) * | 2003-10-17 | 2010-08-17 | Micron Technology, Inc. | Method and apparatus for sending data from multiple sources over a communications bus |
US7102904B1 (en) * | 2004-09-02 | 2006-09-05 | Sun Microsystems, Inc. | System and method for minimizing noise on a dynamic node |
US7502256B2 (en) * | 2004-11-30 | 2009-03-10 | Siliconsystems, Inc. | Systems and methods for reducing unauthorized data recovery from solid-state storage devices |
US7778812B2 (en) * | 2005-01-07 | 2010-08-17 | Micron Technology, Inc. | Selecting data to verify in hardware device model simulation test generation |
JP2007179669A (ja) | 2005-12-28 | 2007-07-12 | Toshiba Corp | メモリシステム |
US7613043B2 (en) * | 2006-05-15 | 2009-11-03 | Apple Inc. | Shifting reference values to account for voltage sag |
US7639542B2 (en) * | 2006-05-15 | 2009-12-29 | Apple Inc. | Maintenance operations for multi-level data storage cells |
US7639531B2 (en) * | 2006-05-15 | 2009-12-29 | Apple Inc. | Dynamic cell bit resolution |
US8000134B2 (en) | 2006-05-15 | 2011-08-16 | Apple Inc. | Off-die charge pump that supplies multiple flash devices |
US7701797B2 (en) * | 2006-05-15 | 2010-04-20 | Apple Inc. | Two levels of voltage regulation supplied for logic and data programming voltage of a memory device |
US7568135B2 (en) * | 2006-05-15 | 2009-07-28 | Apple Inc. | Use of alternative value in cell detection |
US7511646B2 (en) | 2006-05-15 | 2009-03-31 | Apple Inc. | Use of 8-bit or higher A/D for NAND cell value |
US7911834B2 (en) * | 2006-05-15 | 2011-03-22 | Apple Inc. | Analog interface for a flash memory die |
US7852690B2 (en) * | 2006-05-15 | 2010-12-14 | Apple Inc. | Multi-chip package for a flash memory |
US7551486B2 (en) * | 2006-05-15 | 2009-06-23 | Apple Inc. | Iterative memory cell charging based on reference cell value |
ITMI20061037A1 (it) * | 2006-05-26 | 2007-11-27 | St Microelectronics Srl | Metodo di lettura di un dispositivo elettronico non volatile e relativo dispositivo |
US7836364B1 (en) * | 2006-05-30 | 2010-11-16 | Marvell International Ltd. | Circuits, architectures, apparatuses, systems, methods, algorithms, software and firmware for using reserved cells to indicate defect positions |
US7590899B2 (en) * | 2006-09-15 | 2009-09-15 | International Business Machines Corporation | Processor memory array having memory macros for relocatable store protect keys |
KR100782329B1 (ko) * | 2006-10-02 | 2007-12-06 | 삼성전자주식회사 | 메모리 셀 어레이에 분산 배열된 플래그 셀 어레이를구비하는 비휘발성 메모리 장치 및 상기 메모리 장치의구동 방법 |
US7522451B2 (en) * | 2006-10-26 | 2009-04-21 | Macronix International Co., Ltd. | High program speed MLC memory |
US9141557B2 (en) | 2006-12-08 | 2015-09-22 | Ashish A. Pandya | Dynamic random access memory (DRAM) that comprises a programmable intelligent search memory (PRISM) and a cryptography processing engine |
US7899977B2 (en) * | 2006-12-08 | 2011-03-01 | Pandya Ashish A | Programmable intelligent search memory |
US7890692B2 (en) * | 2007-08-17 | 2011-02-15 | Pandya Ashish A | FSA context switch architecture for programmable intelligent search memory |
US7996348B2 (en) | 2006-12-08 | 2011-08-09 | Pandya Ashish A | 100GBPS security and search architecture using programmable intelligent search memory (PRISM) that comprises one or more bit interval counters |
WO2008073824A1 (en) * | 2006-12-08 | 2008-06-19 | Pandya Ashish A | Dynamic programmable intelligent search memory |
US20110029549A1 (en) * | 2006-12-08 | 2011-02-03 | Pandya Ashish A | Signature search architecture for programmable intelligent search memory |
KR100918299B1 (ko) * | 2007-04-25 | 2009-09-18 | 삼성전자주식회사 | 배드 블록 정보를 저장하지 않는 행 디코더를 갖는 플래시메모리 장치 및 그것의 제어 방법 |
US7747903B2 (en) * | 2007-07-09 | 2010-06-29 | Micron Technology, Inc. | Error correction for memory |
US8583857B2 (en) * | 2007-08-20 | 2013-11-12 | Marvell World Trade Ltd. | Method and system for object-oriented data storage |
US20090055605A1 (en) | 2007-08-20 | 2009-02-26 | Zining Wu | Method and system for object-oriented data storage |
US8484432B2 (en) * | 2008-03-11 | 2013-07-09 | Kabushiki Kaisha Toshiba | Memory system |
US9477587B2 (en) | 2008-04-11 | 2016-10-25 | Micron Technology, Inc. | Method and apparatus for a volume management system in a non-volatile memory device |
US7684267B2 (en) * | 2008-06-18 | 2010-03-23 | Sun Microsystems, Inc. | Method and apparatus for memory redundancy in a microprocessor |
TWI403906B (zh) * | 2008-09-17 | 2013-08-01 | Silicon Motion Inc | 快閃記憶裝置及其運作方法 |
US8650355B2 (en) * | 2008-10-15 | 2014-02-11 | Seagate Technology Llc | Non-volatile resistive sense memory on-chip cache |
US8194481B2 (en) | 2008-12-18 | 2012-06-05 | Mosaid Technologies Incorporated | Semiconductor device with main memory unit and auxiliary memory unit requiring preset operation |
US8037235B2 (en) * | 2008-12-18 | 2011-10-11 | Mosaid Technologies Incorporated | Device and method for transferring data to a non-volatile memory device |
US8489801B2 (en) * | 2009-03-04 | 2013-07-16 | Henry F. Huang | Non-volatile memory with hybrid index tag array |
US8090899B1 (en) * | 2009-03-04 | 2012-01-03 | Western Digital Technologies, Inc. | Solid state drive power safe wear-leveling |
US8838995B2 (en) * | 2009-05-29 | 2014-09-16 | Western Digital Technologies, Inc. | Physically modifying a data storage device to disable access to secure data and repurpose the data storage device |
KR101115637B1 (ko) * | 2009-06-30 | 2012-03-05 | 주식회사 하이닉스반도체 | 불휘발성 메모리 장치 및 이의 동작 방법 |
US8385147B2 (en) * | 2010-03-30 | 2013-02-26 | Silicon Storage Technology, Inc. | Systems and methods of non-volatile memory sensing including selective/differential threshold voltage features |
KR20110126408A (ko) | 2010-05-17 | 2011-11-23 | 삼성전자주식회사 | 비휘발성 메모리 장치, 그것을 포함한 메모리 시스템 및 그것의 프로그램 방법 |
US20120167100A1 (en) * | 2010-12-23 | 2012-06-28 | Yan Li | Manual suspend and resume for non-volatile memory |
US9646185B2 (en) * | 2012-01-30 | 2017-05-09 | Nxp B.V. | System and method for managing RFID tags |
KR101984796B1 (ko) | 2012-05-03 | 2019-06-03 | 에스케이하이닉스 주식회사 | 반도체 메모리 장치, 그것을 포함하는 메모리 시스템 및 그것의 동작 방법 |
CN104956313B (zh) | 2013-01-29 | 2018-02-09 | 马维尔国际贸易有限公司 | 用于基于数据分类将数据存储至固态存储设备的方法和装置 |
US9111596B2 (en) * | 2013-08-15 | 2015-08-18 | Arm Limited | Memory access control in a memory device |
CN104425004B (zh) * | 2013-09-06 | 2017-08-29 | 联想(北京)有限公司 | 内存控制器、内存控制系统以及内存控制方法 |
WO2016144726A1 (en) | 2015-03-12 | 2016-09-15 | Micron Technology, Inc. | Apparatuses and methods for data movement |
US9804974B2 (en) * | 2015-05-11 | 2017-10-31 | Bertrand F. Cambou | Memory circuit using dynamic random access memory arrays |
EP3107102A1 (en) * | 2015-06-18 | 2016-12-21 | EM Microelectronic-Marin SA | Memory circuit |
US9830108B2 (en) * | 2015-10-12 | 2017-11-28 | Sandisk Technologies Llc | Write redirect |
FR3044460B1 (fr) | 2015-12-01 | 2018-03-30 | Stmicroelectronics (Rousset) Sas | Amplificateur de lecture pour memoire, en particulier une memoire eeprom |
US9953719B2 (en) * | 2016-05-18 | 2018-04-24 | Silicon Storage Technology, Inc. | Flash memory cell and associated decoders |
US20170352424A1 (en) * | 2016-06-07 | 2017-12-07 | Peter Wung Lee | Plural Distributed PBS with Both Voltage and Current Sensing SA for J-Page Hierarchical NAND Array's Concurrent Operations |
KR101807756B1 (ko) * | 2017-03-23 | 2017-12-12 | 삼성전자주식회사 | 비휘발성 메모리 장치, 그것을 포함한 메모리 시스템 및 그것의 프로그램 방법 |
US10056151B1 (en) * | 2017-06-02 | 2018-08-21 | Texas Instruments Incorporated | Multi-read only memory finite state machine |
US10534554B2 (en) * | 2017-10-13 | 2020-01-14 | Silicon Storage Technology, Inc. | Anti-hacking mechanisms for flash memory device |
CN108921561B (zh) * | 2018-08-27 | 2023-11-21 | 河南芯盾网安科技发展有限公司 | 一种基于硬件加密的数字热钱包 |
US10672469B1 (en) * | 2018-11-30 | 2020-06-02 | Macronix International Co., Ltd. | In-memory convolution for machine learning |
US10768831B2 (en) * | 2018-12-28 | 2020-09-08 | Micron Technology, Inc. | Non-persistent unlock for secure memory |
US11568077B2 (en) | 2019-12-26 | 2023-01-31 | Micron Technology, Inc. | Memory device data security based on content-addressable memory architecture |
Family Cites Families (29)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4051354A (en) * | 1975-07-03 | 1977-09-27 | Texas Instruments Incorporated | Fault-tolerant cell addressable array |
US4897813A (en) * | 1988-02-19 | 1990-01-30 | Unisys Corporation | Partially programmable read-only memory system |
EP0618535B1 (en) * | 1989-04-13 | 1999-08-25 | SanDisk Corporation | EEPROM card with defective cell substitution and cache memory |
FR2682505B1 (fr) * | 1991-10-11 | 1996-09-27 | Sgs Thomson Microelectronics | Dispositif pour detecter le contenu de cellules au sein d'une memoire, notamment une memoire eprom, procede mis en óoeuvre dans ce dispositif, et memoire munie de ce dispositif. |
KR940005696B1 (ko) * | 1991-11-25 | 1994-06-22 | 현대전자산업 주식회사 | 보안성 있는 롬(rom)소자 |
US5347484A (en) * | 1992-06-19 | 1994-09-13 | Intel Corporation | Nonvolatile memory with blocked redundant columns and corresponding content addressable memory sets |
US5438546A (en) * | 1994-06-02 | 1995-08-01 | Intel Corporation | Programmable redundancy scheme suitable for single-bit state and multibit state nonvolatile memories |
JPH0845269A (ja) * | 1994-07-27 | 1996-02-16 | Hitachi Ltd | 半導体記憶装置 |
US5819305A (en) * | 1996-08-23 | 1998-10-06 | Motorola, Inc. | Method and apparatus for configuring operating modes in a memory |
JPH10154394A (ja) * | 1996-11-21 | 1998-06-09 | Toshiba Corp | メモリ装置 |
JP3095064B2 (ja) * | 1997-09-08 | 2000-10-03 | 日本電気株式会社 | 連想記憶装置 |
DE69829539T2 (de) * | 1997-11-26 | 2005-09-01 | Texas Instruments Inc., Dallas | Verbesserungen an oder bei Rechnerspeichern |
US6308185B1 (en) * | 1998-03-06 | 2001-10-23 | Sun Microsystems, Inc. | Methods and apparatus for generational dynamic management of computer memory |
US6175893B1 (en) * | 1998-04-24 | 2001-01-16 | Western Digital Corporation | High bandwidth code/data access using slow memory |
US5999336A (en) * | 1998-06-04 | 1999-12-07 | Yang, Jr.; Peter S. | Fresnel magnifying lens cardholder |
US6381190B1 (en) * | 1999-05-13 | 2002-04-30 | Nec Corporation | Semiconductor memory device in which use of cache can be selected |
US6442076B1 (en) * | 2000-06-30 | 2002-08-27 | Micron Technology, Inc. | Flash memory with multiple status reading capability |
US20020004897A1 (en) * | 2000-07-05 | 2002-01-10 | Min-Cheng Kao | Data processing apparatus for executing multiple instruction sets |
US6396728B1 (en) * | 2000-07-28 | 2002-05-28 | Micron Technology, Inc. | Array organization for high-performance memory devices |
US6792502B1 (en) * | 2000-10-12 | 2004-09-14 | Freescale Semiconductor, Inc. | Microprocessor having a content addressable memory (CAM) device as a functional unit therein and method of operation |
JP3827534B2 (ja) * | 2001-03-01 | 2006-09-27 | シャープ株式会社 | 半導体記憶装置の基準電圧発生回路及びメモリ読出回路 |
US6614687B2 (en) * | 2001-05-03 | 2003-09-02 | Macronix International Co., Ltd. | Current source component with process tracking characteristics for compact programmed Vt distribution of flash EPROM |
US6518817B2 (en) * | 2001-06-28 | 2003-02-11 | Intel Corporation | Voltage buffer |
US6961808B1 (en) * | 2002-01-08 | 2005-11-01 | Cisco Technology, Inc. | Method and apparatus for implementing and using multiple virtual portions of physical associative memories |
US6697276B1 (en) * | 2002-02-01 | 2004-02-24 | Netlogic Microsystems, Inc. | Content addressable memory device |
US6826102B2 (en) * | 2002-05-16 | 2004-11-30 | Micron Technology, Inc. | Noise resistant small signal sensing circuit for a memory device |
US6950342B2 (en) * | 2002-07-05 | 2005-09-27 | Impinj, Inc. | Differential floating gate nonvolatile memories |
US6952358B2 (en) * | 2003-05-05 | 2005-10-04 | Hewlett-Packard Development Company, L.P. | Molecular wire content addressable memory |
US7098685B1 (en) * | 2003-07-14 | 2006-08-29 | Lattice Semiconductor Corporation | Scalable serializer-deserializer architecture and programmable interface |
-
2003
- 2003-09-09 US US10/659,226 patent/US7019998B2/en not_active Expired - Lifetime
-
2004
- 2004-08-19 TW TW093124961A patent/TWI366833B/zh active
- 2004-09-09 CN CN200410078554.XA patent/CN1595527B/zh active Active
- 2004-09-09 CN CN201210028325.1A patent/CN102543169B/zh active Active
- 2004-09-09 CN CN201410275936.5A patent/CN104064214B/zh active Active
-
2005
- 2005-05-10 US US11/126,495 patent/US7212459B2/en not_active Expired - Lifetime
- 2005-09-15 US US11/229,191 patent/US7336516B2/en not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
CN104064214B (zh) | 2017-04-12 |
US7336516B2 (en) | 2008-02-26 |
CN1595527A (zh) | 2005-03-16 |
CN104064214A (zh) | 2014-09-24 |
CN102543169A (zh) | 2012-07-04 |
CN102543169B (zh) | 2016-03-30 |
US20050201151A1 (en) | 2005-09-15 |
US20050052934A1 (en) | 2005-03-10 |
US20060044881A1 (en) | 2006-03-02 |
US7019998B2 (en) | 2006-03-28 |
CN1595527B (zh) | 2012-04-18 |
US7212459B2 (en) | 2007-05-01 |
TW200519965A (en) | 2005-06-16 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
TWI366833B (en) | Memory system and configurable sense amplifier | |
AU2003294352A1 (en) | Magnetic memory element and memory device including same | |
AU2003287663A1 (en) | Mram and methods for reading the mram | |
GB0408554D0 (en) | Systems and methods for providing dynamic price improvement | |
GB2408644B (en) | Amplifier | |
ZA200603882B (en) | Substituted benzimidazole-, benztriazole-, and benzimidazolone-O-glucosides | |
IL175491A0 (en) | Substituted benzimidazole-, benztriazole-, and benzimidazolone-o-glucosides | |
TWI351033B (en) | Magnetic memory device | |
AU2003282478A8 (en) | Discount-instrument methods and systems | |
GB2406008B (en) | Class D amplifier | |
PL374598A1 (en) | Caspase inhibitors and uses thereof | |
ZA200509700B (en) | Caspase inhibitors and uses thereof | |
EP1575088A4 (en) | MAGNETIC MEMORY SYSTEM | |
HK1088837A1 (en) | Clk-peptide and slk-peptide | |
EP1710674A4 (en) | STORAGE DEVICE AND INFORMATION PROCESSING SYSTEM | |
EP1526588A4 (en) | MAGNETIC RESOURCE EFFECT ELEMENT AND MAGNETIC STORAGE UNIT | |
EP1690173A4 (en) | COMMAND PROCESSING SYSTEMS AND METHODS | |
EP1817695A4 (en) | READING ALERTS AND TEXT ROUTING SYSTEM | |
EP1694444A4 (en) | CARD READING SYSTEMS AND METHOD | |
GB0205699D0 (en) | Amplifier and turner | |
EP1695291A4 (en) | TELECOMMUNICATION SYSTEMS AND METHODS | |
GB0324418D0 (en) | Rectroreflective devices and systems | |
AU2003217978A8 (en) | Split-band depressed-profile amplifier and system | |
GB0316910D0 (en) | Fluorocombretastatin and derivatives thereof | |
GB2394878B (en) | Hooklink and lead discharge system |