TWI366232B - Method of forming insulating film and method of manufacturing semiconductor device - Google Patents

Method of forming insulating film and method of manufacturing semiconductor device

Info

Publication number
TWI366232B
TWI366232B TW096129934A TW96129934A TWI366232B TW I366232 B TWI366232 B TW I366232B TW 096129934 A TW096129934 A TW 096129934A TW 96129934 A TW96129934 A TW 96129934A TW I366232 B TWI366232 B TW I366232B
Authority
TW
Taiwan
Prior art keywords
semiconductor device
insulating film
manufacturing semiconductor
forming insulating
forming
Prior art date
Application number
TW096129934A
Other languages
English (en)
Other versions
TW200830408A (en
Inventor
Takayuki Iwaki
Original Assignee
Renesas Electronics Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Renesas Electronics Corp filed Critical Renesas Electronics Corp
Publication of TW200830408A publication Critical patent/TW200830408A/zh
Application granted granted Critical
Publication of TWI366232B publication Critical patent/TWI366232B/zh

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
    • H01L21/02227—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process
    • H01L21/0223—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by oxidation, e.g. oxidation of the substrate
    • H01L21/02244—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by oxidation, e.g. oxidation of the substrate of a metallic layer
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
    • H01L21/02172—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides
    • H01L21/02175—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides characterised by the metal
    • H01L21/02183—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides characterised by the metal the material containing tantalum, e.g. Ta2O5
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
    • H01L21/02227—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process
    • H01L21/02255—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by thermal treatment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/314—Inorganic layers
    • H01L21/316—Inorganic layers composed of oxides or glassy oxides or oxide based glass
    • H01L21/3165—Inorganic layers composed of oxides or glassy oxides or oxide based glass formed by oxidation
    • H01L21/31683—Inorganic layers composed of oxides or glassy oxides or oxide based glass formed by oxidation of metallic layers, e.g. Al deposited on the body, e.g. formation of multi-layer insulating structures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L28/00—Passive two-terminal components without a potential-jump or surface barrier for integrated circuits; Details thereof; Multistep manufacturing processes therefor
    • H01L28/40—Capacitors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02296—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer
    • H01L21/02318—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment
    • H01L21/02321—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment introduction of substances into an already existing insulating layer
    • H01L21/02323—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment introduction of substances into an already existing insulating layer introduction of oxygen

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Formation Of Insulating Films (AREA)
TW096129934A 2006-08-22 2007-08-14 Method of forming insulating film and method of manufacturing semiconductor device TWI366232B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2006225887A JP5107541B2 (ja) 2006-08-22 2006-08-22 絶縁膜形成方法および半導体装置の製造方法

Publications (2)

Publication Number Publication Date
TW200830408A TW200830408A (en) 2008-07-16
TWI366232B true TWI366232B (en) 2012-06-11

Family

ID=39129130

Family Applications (1)

Application Number Title Priority Date Filing Date
TW096129934A TWI366232B (en) 2006-08-22 2007-08-14 Method of forming insulating film and method of manufacturing semiconductor device

Country Status (4)

Country Link
US (1) US7691758B2 (zh)
JP (1) JP5107541B2 (zh)
CN (1) CN101131931A (zh)
TW (1) TWI366232B (zh)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5683388B2 (ja) 2010-08-19 2015-03-11 株式会社日立国際電気 半導体装置の製造方法、基板処理方法及び基板処理装置
CN109943822B (zh) * 2017-12-21 2020-04-28 中国科学院宁波材料技术与工程研究所 一种提高CrN涂层抗磨减摩性能的后处理方法
US11081343B2 (en) 2019-07-19 2021-08-03 International Business Machines Corporation Sub-stoichiometric metal-oxide thin films
US11362274B2 (en) 2020-01-10 2022-06-14 International Business Machines Corporation Laterally switching cell having sub-stoichiometric metal oxide active layer

Family Cites Families (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6051250B2 (ja) * 1976-12-27 1985-11-13 株式会社日立製作所 薄膜容量素子の製造方法
JPS62136035A (ja) * 1985-12-10 1987-06-19 Fujitsu Ltd 半導体装置の製造方法
JPS63126264A (ja) * 1986-11-17 1988-05-30 Toshiba Corp 半導体装置
JPH04124869A (ja) * 1990-09-17 1992-04-24 Nikko Kyodo Co Ltd 窒化タンタル膜の形成方法
TW403972B (en) * 1993-01-18 2000-09-01 Semiconductor Energy Lab Method of fabricating mis semiconductor device
JPH08293494A (ja) * 1995-04-24 1996-11-05 Canon Inc 半導体装置
US5872696A (en) * 1997-04-09 1999-02-16 Fujitsu Limited Sputtered and anodized capacitors capable of withstanding exposure to high temperatures
JPH11168096A (ja) * 1997-12-04 1999-06-22 Sony Corp 高誘電酸化膜の形成方法
JP4376331B2 (ja) * 1998-08-07 2009-12-02 株式会社半導体エネルギー研究所 半導体装置の作製方法
US6737716B1 (en) * 1999-01-29 2004-05-18 Kabushiki Kaisha Toshiba Semiconductor device and method of manufacturing the same
JP4529262B2 (ja) * 2000-09-14 2010-08-25 ソニー株式会社 高周波モジュール装置及びその製造方法
JP4801248B2 (ja) * 2000-10-31 2011-10-26 アプライド マテリアルズ インコーポレイテッド 酸化膜形成方法及び装置
US20020119622A1 (en) * 2001-02-27 2002-08-29 Steigerwald Michael L. Capacitor having a blended interface and a method of manufacture thereof
US6555161B1 (en) * 2001-05-18 2003-04-29 Ensci Inc. Process for producing thin film metal oxide coated substrates
KR100400252B1 (ko) * 2001-06-29 2003-10-01 주식회사 하이닉스반도체 탄탈륨 옥사이드 캐퍼시터의 형성 방법
JP4411825B2 (ja) * 2001-09-13 2010-02-10 セイコーエプソン株式会社 電気光学装置の製造方法
JP2004095918A (ja) * 2002-08-30 2004-03-25 Fasl Japan Ltd 半導体記憶装置及び半導体装置の製造方法
US20050153571A1 (en) * 2003-11-17 2005-07-14 Yoshihide Senzaki Nitridation of high-k dielectric films
CN1257861C (zh) 2004-08-20 2006-05-31 复旦大学 湿热氧化制备二氧化钛光催化薄膜的方法

Also Published As

Publication number Publication date
JP5107541B2 (ja) 2012-12-26
US7691758B2 (en) 2010-04-06
JP2008053318A (ja) 2008-03-06
TW200830408A (en) 2008-07-16
CN101131931A (zh) 2008-02-27
US20080050930A1 (en) 2008-02-28

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Legal Events

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MM4A Annulment or lapse of patent due to non-payment of fees