TWI357671B - - Google Patents

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Publication number
TWI357671B
TWI357671B TW97125901A TW97125901A TWI357671B TW I357671 B TWI357671 B TW I357671B TW 97125901 A TW97125901 A TW 97125901A TW 97125901 A TW97125901 A TW 97125901A TW I357671 B TWI357671 B TW I357671B
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Taiwan
Prior art keywords
light
concave portion
emitting element
emitting device
emitting
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TW97125901A
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Chinese (zh)
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TW200921949A (en
Inventor
Takuya Noichi
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Nichia Corp
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Publication of TWI357671B publication Critical patent/TWI357671B/zh

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/484—Connecting portions
    • H01L2224/48463—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond
    • H01L2224/48465—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond the other connecting portion not on the bonding area being a wedge bond, i.e. ball-to-wedge, regular stitch
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/013—Alloys
    • H01L2924/0132—Binary Alloys
    • H01L2924/01322—Eutectic Alloys, i.e. obtained by a liquid transforming into two solid phases
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/30—Technical effects
    • H01L2924/301—Electrical effects
    • H01L2924/3025—Electromagnetic shielding

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  • Led Devices (AREA)

Abstract

A light emitting device and manufacturing method thereof, wherein the light emitting device 100 includes a light emitting element 101, a package for arranging the light emitting element 101, and an electrically conductive wire 106 for connecting an electrode disposed on the package and an electrode of the light emitting element. The package includes a support member 108 having a mounting portion to arrange the light emitting element 101 and defining a recess 103 to house a semiconductor element 102 which is different than the light emitting element, and a light transmissive member 107 covering at least the light emitting element 101. The package defines a hollow portion 111 between the light transmissive member 107 covering the opening of the recess 103 and an inner wall defining the recess 103.

Description

1357671 九、發明說明 【發明所屬之技術領域】 本發明關於用於照明器具、顯示器、攜帶型電話的背 . 光、動畫照明輔助光源、其他光源等的發光裝置及其製造 方法。 【先前技術】 9 利用像發光二極體那樣的發光元件的發光裝置小型且 電力效率優良地發出鮮豔顏色的光。另外，這樣的發光元 件不同於電燈泡等，不用擔心燈泡壞掉等。而且，具有初 期驅動特性出色、耐振動和開關燈的反復操作的特徵。由 於具有這樣出色的特性，因此利用了發光二極體（led ) 、雷射二極體（LD )等發光元件的發光裝置被利用作爲照 明器具、攜帶型電話的背光等光源。 在這樣的發光裝置中，爲了保護發光元件免受過電壓 • 的破壞，在發光裝置中搭載有稽納二極體等保護元件。這 樣的保護元件在搭載了發光元件的支撐基板上，與發光元 件鄰近地配置，且與該發光元件電連接。 例如，在（日本）特開平1 1 一 54804號公報中所公開 的發光裝置，具備：設置了極性不同的第1電極及第2電 極的絕緣性基板、在第1電極的上表面側配置的LED晶 片、在第2電極上配置的保護元件（例如，稽納二極體） 、以及被覆LED晶片及與該LED晶片連接的導電性導線 的封裝樹脂。而且，LED晶片的一個電極與第1電極、另 1357671 一個電極與第2電極分別用導線連 件的上表面側的電極與第1電極用 面側的電極通過導電性黏接劑與第 在這樣的發光裝置中，由於來 元件吸收，或被保護元件遮光，因 光取出效率下降。因此，如果在保 在該凹部內配置保護元件，使保護 件的高度，那麼能夠減少保護元件 或者，像（日本）特開 2007-開的發光裝置那樣，通過在發光元 與被覆發光元件的透光性構件不同 光元件的光向發光裝置之外反射， 發光元件向發光裝置之外被取出的 在支撐基板上安裝多個半導體元件 於容納保護元件的凹部乃設置在支 裝發光元件的面相同的面上具有開 但是，若在比發光元件的搭載 載放保護元件，則從在上方載放的 出的光的一部分被封入凹部內。由 的光的取出效率下降。而且，由於 來自發光元件的光的情況下，被封 吸收，因此發光裝置的輸出明顯下 射性的塡充物埋設容納保護元件的 內的光的侵入，那麼因花費工夫或 接。另一方面，保護元 導電性導線連接，下表 2電極連接。 自發光元件的光被保護 此作爲發光裝置整體， 護元件之下形成凹部， 元件的高度低於發光元 造成的光的遮斷。 -1 5022 9號公報中所公 件與保護元件之間配置 的反射構件，使來自發 由此保護元件不妨礙從 光的通路。而且，考慮 時的操作簡易性等，用 撐基板上，以使在與安 口部較佳。 面還低地形成的凹部內 發光元件的端面方向發 此，向發光裝置的外部 在保護元件的體色吸收 入的光因保護元件而被 降。另外，如果用光反 凹部，由此阻止向凹部 时料費用而不現實。 -5- 1357671 【發明內容】 • 因此，本發明的目的在於提供一種具有出色的 . 和光學特性的發光裝置，另外，目的在於提供一種 製造這樣的發光裝置的方法。 爲了達到以上目的，本發明關於的發光裝置， 發光元件、配置該發光元件的封裝、及連接設置在 φ 上的電極和前述發光元件的電極的導電性導線，前 具備：支撐體、及在該支撐體上配置的透光性構件 撐體具有配置前述發光元件的搭載部及容納與前述 件不同的半導體元件的凹部；前述透光性構件被覆 前述發光元件和前述凹部的開口部，前述封裝在前 具有空洞。前述空洞設置在被覆前述開口部的透光 的底面和容納在前述凹部的半導體元件的上表面之 〇 • 另外，一種發光裝置的製造方法，該發光裝置 發光元件、配置該發光元件的封裝、及連接設置在 上的電極和前述發光元件的電極的導電性導線；前 具備：被覆至少前述發光元件的透光性構件、及支 該支撐體具有配置前述發光元件的搭載部及容納與 光元件不同的半導體元件的凹部；該發光裝置的製 ，包括以下工程：第一工程，形成具有在搭載前述 件的上表面開口的凹部的支撐體；第二工程，在前 元件的搭載部的上表面之下配置前述半導體元件的 可靠性 低廉地 具備： 該封裝 述封裝 ，該支 發光元 著至少 述凹部 性構件 間爲佳 具備= 該封裝 述封裝 撐體， 前述發 造方法 發光元 述發光 上表面 -6- 1357671 ，在前述凹部容納前述半導體元件：第三工程，配置前述 發光元件及前述導電性導線；第四工程，在前述凹部內形 成空洞，並在前述支撐體上配置被覆至少前述發光元件及 前述凹部的開口部的透光性構件。 通過以下的詳細描述並結合附圖，會對本發明的前述 和進一步的實物及其特點更清楚。 【實施方式】 發光裝置在比發光元件的安裝面還低的凹部的底面配 置保護元件，進而，在容納了保護元件的凹部內具有空洞 。在此，在被覆發光元件的透光性構件和空洞之間產生折 射率差。於是，從發光元件放射的光、或來自螢光體的光 在折射率不同的這些邊界面被反射向發光裝置的外部取出 。即，本發明通過利用設置在凹部內的空洞，與現有技術 比較，能夠使發光裝置的光取出效率提高。另外，這些光 在凹部沒有損失地從發光裝置被取出，從而發光裝置的配 光色度的偏差也變小。 發光裝置在容納了保護元件的凹部內設置通過在支撐 體上配置透光性構件而形成的空洞，由此阻止向該凹部內 的光的侵入。因此，與在凹部內埋設光反射性的塡充物的 發光裝置、或在發光元件和保護元件之間設置與被覆發光 元件的透光性構件不同的反射構件的發光裝置等比較，本 發明能夠作爲由容納保護元件的凹部所造成的光損失少且 結搆比較簡單的低廉的發光裝置。 1357671 另外’發光裝置的製造方法，與在容納保護元件的凹 部內埋設光反射性的塡充物的發光裝置、或在發光元件和 保護元件之間設置反射構件的發光裝置比較，能夠比較簡 單且低廉地形成在凹部中光損失少的發光裝置。進而，本 發明中的發光裝置的製造方法，通過在支撐體上形成被覆 發光元件的透光性構件的工程，也可以同時在具有比發光 元件的安裝面還低的底面的凹部使氣泡殘存。因此，能夠 比較簡單且低廉地製造在凹部中光損失少的發光裝置。 在發光裝置的封裝凹部形成的空洞，設置在被覆前述 開口部的透光性構件的底面和在前述凹部容納的半導體元 件的上表面之間爲佳。 另外，透光性構件具有從前述凹部的開口部向前述凹 部的底面的凸狀的突出部爲佳。 進而，前述凹部設置在被前述發光元件的多個搭載部 夾著的區域，前述支撐體在前述搭載部的略正下方分別胃 備外部連接電極爲佳。 而且，俯視前述凹部的開口部的外形、與俯視容，納在 前述凹部的半導體元件的外形的相似比是從1. 〇到2.5胃 佳。 而且，前述第四工程包括以相對前述發光元件的搭κ 面略平行的方向，連續地供給前述透光性構件的材料的王 程爲佳。 而且，前述透光性構件的材料的黏度根據與前述半導 體元件的大小對應的前述凹部的大小，在前述第四工程中 -8 - 1357671 調整，使氣泡在前述凹部殘存爲佳。 而且’前述透光性構件的材料是包含從矽酮樹脂或環 氧樹脂中選擇的至少一種以上的樹脂、且在該樹脂中含有 粒子狀螢光體的材料爲佳。 而且，前述透光性構件的材料的黏度在200Pa · s以 上、500Pa· s以下爲佳。 而且，俯視前述凹部的開口部的外形、與俯視容納在 前述凹部的半導體元件的外形的相似比是從1 · 〇到2.5， 前述凹部的深度、與容納在前述凹部的半導體元件的高度 的比是從1 · 0到2.1 4爲佳。 對於具備發光元件、配置該發光元件的封裝、及連接 設置在該封裝上的電極和發光元件的電極的導電性導線的 發光裝置，其中封裝具備支撐體、及至少被覆發光元件的 透光性構件’該支撐體具有配置發光元件的搭載部及容納 與發光元件不同的半導體元件的凹部，爲了使由前述凹部 所造成的光的損失減小，本發明人進行了各種硏究。其結 果，通過將容納與發光元件不同的半導體元件的凹部的開 口部用被覆發光元件的透光性構件的一部分來被覆，製成 在該凹部設置有空洞的封裝，從而得以解決問題。本發明 通過在凹部具有空洞，從而在被覆凹部的開口部的透光性 構件和空洞之間產生折射率差。於是，以這些折射率不同 的邊界面作爲反射面，光被反射且從發光裝置出射。這樣 ，本發明在凹部中不使光損失，所以與現有技術比較，發 光裝置的光取出效率提高。 -9- 1357671 進而，發光裝置的封裝中的空洞，設置在對凹部的開 口部進行被覆的透光性構件的底面和容納在凹部的半導體 元件的上表面之間爲佳。這是因爲能夠抑制通過透光性構 件傳播的光被容納在凹部內的半導體元件吸收。 透光性構件在凹部的開口部具有突出部，該突出部具 有向凹部的底面的凸狀的底面爲佳。這是因爲利用這樣的 突出部，不使光入射到凹部內，提高向支撐體上表面的透 光性構件的方向反射的效果。另外，在透光性構件或其突 出部的底面、和容納在凹部的半導體元件的上表面之間設 置空洞爲佳。通過在透光性構件的底面和半導體元件的上 表面之間，設置因空洞產生的間隔，由此凹部外的光將不 會照射到半導體元件的方向，不因容納在凹部內的半導體 元件而受到損失。 俯視凹部的開口部的外形、與俯視容納在凹部的半導 體兀件的外形的相似比是從1 · 〇到2 · 5爲佳。這是因爲若 相對於半導體元件的大小，凹部的開口部的大小過大，則 侵入到凹部內的光變多。另外，若相對於半導體元件的大 小，開口部的大小過小，則在凹部內配置半導體元件的工 程的操作性降低，所以不能製成量產性好的發光裝置。 對於發光裝置的製造方法，該發光裝置具備：發光元 件、配置該發光元件的封裝、以及連接設置在該封裝上的 電極和前述發光元件的電極的導電性導線，封裝具備：被 覆至少發光元件的透光性構件、及支撐體，該支撐體具有 配置發光元件的搭載部及容納與發光元件不同的半導體元 -10- 1357671 件的凹部，爲了比較簡單且低廉地製造在凹部中光損失少 的發光裝置，本發明人進行了各種硏究。其結果，發光裝 置的製造方法通過具有特徵在於，包括以下工程：第一工 程’在支撐體上形成在發光元件的搭載面上具有開口部的 凹部；第二工程，比發光元件的搭載面還低地配置半導體 元件的上表面’在凹部容納半導體元件；第三工程，配置 發光元件及導電性導線；第四工程，在凹部內形成空洞， 並且在支撐體上配置被覆至少發光元件及凹部的開口部的 透光性構件’從而得以解決問題。即，因爲發光裝置的製 造方法無須在容納半導體元件的凹部內埋設光反射性的塡 充物’所以能夠比較簡單且低廉地製造在凹部中的光損失 少的發光裝置。 另外，發光裝置的製造方法通過在同一工程中進行對 支撐體的透光性構件的形成和空洞的形成，能夠簡略製造 發光裝置的工程。在利用這樣的方法時，形成透光性構件 的第四工程包括以相對發光元件的搭載面略平行的方向， 連續地供給透光性構件的材料的工程。即，以相對于配置 了發光元件的搭載面略平行的方向，流入具有流動性的透 光性構件的材料，且按型成型該材料並使其固化，由此形 成透光性構件。而且，“略平行”是對平行于發光元件的 搭載面的面，以±10°左右的範圍作爲容許範圍。 透光性構件的材料的黏度根據所容納的半導體元件和 凹部的大小，在第四工程中調整，使氣泡殘存而形成空洞 。例如，凹部的大小及深度，乃俯視凹部的開口部的外形 -11 - 1357671 、與俯視容納在凹部的半導體元件的外形的相似比是從 1.0到2.5，且凹部的深度D、與容納在凹部的半導體元件 • 的高度H的比（D/H)是從1.0到2.14爲佳。這是爲了將 - 氣泡的大小設爲與發光裝置的可靠性的下降無關所需要的 最小限度。 進而，透光性構件的材料的黏度在200Pa· s以上、 5 OOPa · s以下爲佳。這是因爲若黏度低，則在容納有半導 • 體元件的凹部不形成空洞，而凹部由透光性構件的材料塡 滿了。另一方面，若黏度過高，則配置透光性構件的材料 的工程的操作性下降。 另外’通過調整透光性構件的材料的黏度，從而使材 料從凹部的開口部向凹部的底面凸狀地延伸，在凹部的開 口部形成透光性構件的突出部。於是，能夠製成在透光性 構件的突出部中的凸狀的底面、和容納在凹部的半導體元 件的上表面之間設置了空洞的發光裝置。 φ 透光性構件的材料是包含從矽酮樹脂或環氧樹脂中選 擇的至少一種以上的樹脂、且在該樹脂中含有粒子狀螢光 體的材料爲佳。這是因爲通過調整樹脂中的粒子狀蛮光體 的含有率’能夠容易地調整含有粒子狀螢光體的樹脂的黏 度，對於在透光性構件中包含蛋光體的發光裝置，能夠容 易地使空洞形成。 通過以下的詳細描述並結合附圖，會對本發明的前述 和以下的實物及其特點更清楚。 圖1是模式性顯示本發明的一個實施例關於的發光裝 -12- 1357671 置的頂視圖。 圖2是模式性顯示圖1中所示的沿Π_Π方向的發光 裝置的剖面的剖面圖。 圖3是模式性顯示圖1中所示的沿ΠΙ - ΠΙ方向的發光 裝置的剖面的剖面圖。 圖4是模式性顯示本發明的一個實施例中的發光裝置 的底面圖。 圖5是模式性顯示本發明的一個實施例中的發光裝置 的立體圖。 圖6是模式性顯示本發明的另一個實施例關於的發光 裝置的剖面的剖面圖。 如圖1所示，本方式的發光裝置1〇〇，作爲主要的構 成構件，具備：兩個發光元件l〇la、101b，配置這些發光 元件的支撐體108，與發光元件搭載在同一個支撐體上的 其他半導體元件102，以及將半導體元件102的電極連接 到支撐體的電極的第一導電性導線105，將發光元件的電 極連接到支撐體的電極的第二導電性導線106。 .在本方式中，與發光元件分開搭載在支撐體上的半導 體元件102是用於保護發光元件免受過電壓的保護元件（ 例如，稽納二極體）。支撐體1 08具有從配置了發光元件 101a、101b的上表面側向底面側凹陷的凹部103，保護元 件被容納在該凹部1 〇 3內。 進而，在支撐體108的上表面，如圖2、3、5所示， 配置透光性構件1 07以堵住凹部1 03的開口部，該透光性 -13- 1357671 構件107至少被覆配置在上表面側的發光元 以及與其連接的第二導電性導線106。在此 配置於支撐體108的上表面的透光性構件和 具有空洞。在此，本說明書中的“空洞”是 107的內部或在透光性構件107和支撐體之 有空氣或其他氣體的氣泡，或者是在透光性 表面和凹部之間形成的間隙。這樣的空洞在 半導體元件的外側、特別是半導體元件的上 口部的外側行進的方位上配置。空洞的形狀 制。例如，也可以是許多球狀的空洞在凹部 。通過分散地配置空洞，可得到與使透光性 散劑時一樣的效果。即，在透光性構件中光 抑制光向凹部的底面方向的侵入。另外，空 定在開口部的透光性構件的底面和半導體元 間。在被覆凹部的開口部的透光性構件和凹 形成空洞即可，例如，也可以在容納在凹部 的側面和凹部的內壁面之間設置空洞》 本方式中的發光裝置100，如圖2及圖 在對凹部1 03的開口部進行被覆的透光性構 面、半導體元件102的上表面和凹部1〇3的 的空洞111。在凹部103的開口部形成的空: 性構件107的邊界面上，能夠使入射到該邊 光性構件1 07側反射。因此，本方式的發光 不使光侵入到凹部103的內部，而向發光裝 件 1 0 1 a、1 0 1 b ，凹部 103在 凹部內壁之間 在透光性構件 間形成、且含 構件1 0 7的下 配置於凹部的 側，即光從開 、數量不受限 內分散的狀態 構件中含有擴 被擴散，由此 洞的位置不限 件的上表面之 部的內壁之間 的半導體元件 3所示，具有 件107的下表 內壁之間設置 洞1 1 1和透光 界面的光向透 裝置100能夠 置的外部取出 -14 - 1357671 這樣的空洞1 1 1能夠在支撐體1 08上形成透光性 107的工程中一體地形成。例如，能夠在支撐體ι〇8 表面配置孔版、掩膜後，通過印刷透光性構件1 07的 而形成。該方法是以略平行於支撐體的上表面的方向 地供給材料並且配置，從而被覆在支撐體108的上表 置的各構件的方法。因此，凹部103不是完全由透光 件107的材料塡充’而是需要在凹部1〇3形成空洞1 且配置透光性構件1 07的材料。考慮凹部1 03的開口 大小、配置材料的工程的操作簡易性等，本方式的透 構件1 07的材料被預先調整爲規定的黏度。例如，爲 成在透光性構件中含有螢光體的發光裝置，以YAG 光體爲螢光體’以矽酮樹脂爲透光性構件的材料，將 混合。這樣製作的材料的黏度利用B型黏度計測量， 整在200Pa· s以上、500Pa· s以下。 而且’本方式的製造方法利用了這一點，即在將 性構件的材料配置在支撐體上表面時，在從搭載了發 件的支撐體上表面凹陷的凹部中容易因氣泡的殘存而 空洞。即’在該凹陷的凹部容納保護元件，使氣泡在 護元件的周圍殘存’由此形成空洞。因此，根據本方 的發光裝置的製造方法，可以合倂在支撐體上表面配 覆發光元件的透光性構件的工程、和在具有比發光元 安裝面低的底面的凹部利用氣泡的殘存使空洞形成的 。本方式的發光裝置與在容納保護元件的凹部埋設光 構件 的上 材料 連續 面配 性構 11並 部的 光性 了製 系營 兩者 被調 透光 光元 形成 該保 式中 置被 件的 工程 反射 -15- 1357671 性的塡充物的器件比較，是能夠比較簡單且低廉地製造的 光取出效率高的發光裝置。 另外，本方式的發光裝置，如圖6所示，能夠在凹部 103的開口部設置透光性構件107的突出部112。該突出 部112是在透光性構件107中，具有向凹部的底面的方向 凸狀突出的凸面的部位。進而，也能夠在突出部112的凸 狀的底面、和容納在凹部的半導體元件1 〇2的上表面之間 具有空洞1 1 1。這樣的透光性構件的突出部1 1 2能夠利用 具有某種黏度的透光性構件的流動性來調整形狀，之後使 其固化而形成。即，在調整透光性構件的材料的黏度後， 使流動性的材料從凹部的開口部向凹部的底面凸狀地延伸 ，當成爲所希望的形狀時使其固化。另外，通過適當調整 透光性構件的材料的黏度，也能夠調整向凹部的底面方向 的延伸的程度。由此，能夠在突出部中的凸狀的底面、和 容納在凹部的半導體元件的上表面之間形成空洞，或調整 其大小。 或者，本方式中的空洞111也能夠通過在支撐體108 的上表面配置預先在其他工程中形成的透光性構件107， 用該透光性構件107的一部分，將配置有半導體元件的凹 部的開口部堵住，由此來設置。即，在爲被覆發光元件而 配置在支撐體108的上表面的透光性構件107之中，在將 凹部103的開口部堵住的透光性構件107的下表面和凹部 1 03之間形成空洞，能夠利用透光性構件的下表面使光反 射而向外部取出。而且，若考慮提高生產性，則如先前說 -16- 1357671 明的那樣，在形成被覆發光元件和導電性導線的透光性構 件的同時，也形成空洞的製造方法爲佳。 在本說明書中，各構件的上表面是形成支撐體的外觀 形狀的各面之中，搭載發光元件一側的面爲上表面，與該 上表面相對的面爲底面。另外，連接上表面和底面的、它 們之間的面爲側面。 本方式的發光裝置100具備正負成對的外部連接電極 110a、110c’當發光裝置1〇〇由焊錫安裝在佈線基板（未 圖示）上時，通過該焊錫，外部連接電極ll〇a、110c與 佈線基板的電極連接。這時，外部連接電極1 1 0 a、1 1 〇 c 也能夠作爲從支撐體經由焊錫向佈線基板的散熱通路。 因此’若在設置在支撐體的底面側的外部連接電極的 略緊上方配置發光元件的搭載部，則能夠縮短散熱通路， 因此提高發光裝置的散熱性。而且，如本方式的發光裝置 1〇〇’在將多個發光元件101a、101b的搭載部設置在支撐 體108上時’從支撐體的上表面方向看，這樣的支撐體， 在被分別配置多個發光元件的多個搭載部l〇4b夾著的區 域上，具有用於容納與發光元件不同的半導體元件的凹部 的開口部爲佳。而且，發光裝置100的正負成對的外部連 接電極110a、110c延伸設置到發光元件i〇ia、i〇lb的各 搭載部l〇4b的正下方爲佳。即’在構成發光裝置1〇〇的 支撐體108的背面配置的外部連接電極ii〇a、hoc的外 开^ ’從支撐體108的上表面（圖1所示）向背面（圖4所 示）垂直投影搭載部104b的配置圖形外形時，是包括該 -17- 1357671 投影形狀的至少一部分的形狀爲佳，具有包括前述投影形 狀的全部的形狀則更佳。 例如，本方式的發光裝置，如圖4所示，配置在支撐 體的底面的正負成對的外部連接電極110a、110c，從支撐 體108的兩端部延伸到發光元件l〇la、l〇lb的搭載部 1 04b的正下方。利用這樣的外部連接電極和發光元件的搭 載部的配置關係，在將多個發光元件搭載在支撐體上時， 凹部或設置在凹部的空洞不妨礙從發光元件的搭載部經由 外部連接電極向佈線基板的散熱。因此，不使發光裝置的 散熱性降低，能夠使發光裝置的輸出提高。 在容納半導體元件的凹部內設置正負成對的電極，這 些電極和半導體元件的電連接也能夠在凹部內進行。凹部 內的電極和半導體元件的電極的連接方式，例如，能夠使 在凹部的底面露出的正負成對的電極和半導體元件的電極 相互面對並利用凸塊等使其接合，或利用導電性導線將半 導體元件的上表面的電極連接到凹部底面的電極。使半導 體元件的各電極和凹部內的電極連接的導電性導線全部容 納在凹部內爲佳。即’導電性導線的最頂部比配置了發光 元件的支撐體的上表面還低爲佳。由此，透光性構件107 受導電性導線影響變少，能夠消除因導電性導線的金屬疲 勞造成的發光裝置的可靠性的下降。 如本方式的發光裝置，在發光元件和與其不同的發光 元件之間具有凹部這樣的結構’在被發光元件夾著的區域 ’光量變多’若這些光侵入到凹部內，則光的損失也變多 -18- 1357671 。爲了使在那樣結構的發光裝置中光的損失減少，可特別 較佳且適用本發明。以下’對本方式的發光裝置中的各構 成構件進行詳細描述。 (發光元件） 在本方式中，對在支撐體上配置了發光元件及保護元 件的半導體器件進行說明’但並不限定於這樣的方式，也 可以是搭載有受光元件、其他保護元件（電阻、電晶體或 電容器等）、或使它們至少兩種以上組合而成的元件的半 導體器件。發光元件、容納在凹部內的保護元件或其他半 導體元件可以是一個，也可以是多個。發光元件的發光顏 色可以是紅色系、綠色系或藍色系的任意一種，或是使這 些顏色組合而成的顏色。 本方式中的發光元件，作爲具備螢光物質的發光裝置 時，具有活性層的半導體發光元件爲佳，該活性層能夠發 出可激勵該螢光物質的波長的光。作爲這樣的半導體發光 元件，可列舉ZnSe、GaN等各種半導體，也適宜列舉可 發出能夠效率良好地激勵螢光物質的短波長的光的氮化物 半導體（InxAlYGai-X.YN、OSX、OSY、χ+Ygi)。利 用半導體層的材料或其混晶度能夠選擇各種發光波長。 使用氮化物半導體作爲發光元件的材料時，在用於使 半導體層疊的半導體用基板上可適宜使用藍寶石、尖晶石 、SiC、Si、ZnO、GaN等材料。爲了量產性好地形成結晶 性良好的氮化物半導體，使用藍寶石基板爲佳。在該藍寶 -19- 1357671 石基板上可使用MOCVD法等形成氮化物半導體。另外， 半導體用基板也能夠在層疊半導體層後去除。 在作爲使白色系的混色光發光的發光裝置時，考慮與 來自螢光物質的發光波長的補色關係或密封樹脂的劣化等 ，發光元件的發光波長在4 0 0 nm以上、5 3 0 nm以下爲佳， 更佳爲在420nm以上、490nm以下。爲了分別使發光元件 和螢光物質的激勵、發光效率進一步提高，進而在4 5 Onm 以上、475nm以下爲佳。 作爲發紅色系的光的發光元件的材料，鎵鋁砷系半導 體或者鋁銦鎵磷系半導體爲佳。 而且，爲了製成彩色顯示器件，組合紅色系的發光波 長從610nm到700nm、綠色系從495nm到565nm、藍色系 的發光波長從43 Onm到490nm的發光元件爲佳。 在支撐體上固定發光元件後，用導電性導線分別連接 發光元件的各電極和支撐體的導體佈線。其中，用於固定 發光元件的接合構件沒有特別限定，能夠使用環氧樹脂等 絕緣性黏接劑，或含有Au和Sn的共晶材、低熔點金屬等 釺料、含有樹脂的導電性膠黏劑或玻璃等，該樹脂含有導 電性材料。在此，在導電性膠黏劑中含有的導電性材料， 入11、311或八§爲佳，更佳乃若使用人§的含有量是80%〜 90%的Ag膠黏劑，則可得到散熱性也出色的發光裝置。 而且，在底面側具有電極的半導體元件，可利用含有銀、 金、鈀等金屬材料的導電性膠黏劑，黏接在支撐體上。 對於在透光性的藍寶石基板上使氮化物半導體層疊而 -20- 1357671 形成的發光元件的情況，作爲接合構件，可列舉例如環氧 樹脂、矽酮等。這時，在發光元件的底面（即，前述藍寶 石基板中與層疊了氮化物半導體的面相反側的面。以下， 在該段落中相同。）也可以配置銀或鋁的金屬材料。例如 ’在發光元件的底面通過·蒸鍍或濺射銀或鋁的金屬材料， 能夠成膜金屬層。由此，發光元件的底面的光反射率提高 ’因此，在以樹脂材料作爲接合構件時，抑制因來自發光 元件的光或熱造成的樹脂的劣化，發光裝置的光取出效率 提高。進而’從發光元件的底面側，依次層疊以銀或鋁爲 材料的金屬層、還有以Au或Sn爲材料的共晶層。由此， 在發光元件的底面和共晶層之間光反射率提高。另外，當 共晶材包含將來自發光元件的光的至少一部分吸收的材料 時’因爲在發光元件的底面側光的損失減少，所以發光裝 置的光取出效率提高。 發光元件通過接合構件固定在設置於下述的支撐體的 上表面的發光元件搭載部上。在本方式中，發光元件固定 在設置於支撐體的上表面的金屬構件上。但是，並不限於 這樣的方式’發光元件也可以安裝在構成支撐體的絕緣構 件上。 (導電性導線） 導電性導線要求是與發光元件的電極的歐姆性、機械 連接性、導電性及熱傳導性好的導線。熱傳導率在 O.Olcal/ ( s ) ( cm2 ) ( t： /cm )以上爲佳，更佳爲在 -21 - 1357671 〇.5cal/ ( s ) ( cm2 ) ( °C /cm )以上。另外，考慮操作性 等’導電性導線的直徑在φ ΙΟμιη以上、φ45μιη以下爲佳 。在使透光性構件中含有螢光物質時，在含有螢光物質的 部位和未含有螢光物質的部位的介面，導電性導線容易斷 線。因此’更佳爲導電性導線的直徑在25μιη以上，從確 保發光元件的發光面積、操作簡易性的觀點看，更佳爲在 35 μπι以下。作爲這樣的導電性導線，具體地，可列舉使 用金、銅、白金、鋁等金屬及它們的合金的導電性導線。 (支撐體） 本方式的封裝由配置半導體元件及電極的支撐體、和 被覆半導體元件的透光性構件構成。首先，作爲本方式的 發光裝置中的支撐體，可適宜利用在絕緣性基板上實施導 體佈線的板狀的支撐體。發光元件配置於設置在板狀的支 撐體的主面上的搭載部。作爲沒有側壁來包圍發光元件的 側面方向的支撐體，可使從發光元件的側面方向出射的光 不受損失’而向外部取出。本方式的絕緣性基板是上表面 爲略矩形的長方體，在上表面的略中央部具有從上表面側 向底面側凹陷的凹部。另外，在絕緣性基板的上表面，設 置用於搭載發光元件的金屬構件和兩對正負成對的電極。 凹部設置在這些電極及金屬材料之間。另外，在凹部的底 面設置著電極，該電極與設置在絕緣性基板的上表面的電 極電連接。而且，考慮以金屬構件作爲搭載部配置的半導 體元件的大小及形狀、導電性導線的易拉伸性等，適當調 -22-1357671 IX. Description of the Invention [Technical Field] The present invention relates to a light-emitting device for a lighting fixture, a display, a portable telephone, a light source, an animated illumination auxiliary light source, and other light sources, and a method of manufacturing the same. [Prior Art] 9 A light-emitting device using a light-emitting element such as a light-emitting diode emits light of a bright color in a small size and excellent in power efficiency. In addition, such a light-emitting element is different from a light bulb or the like, and there is no need to worry that the light bulb is broken. Moreover, it has the characteristics of excellent initial drive characteristics, vibration resistance and repeated operation of the switch lamp. Because of such excellent characteristics, a light-emitting device using a light-emitting element such as a light-emitting diode (LED) or a laser diode (LD) is used as a light source such as a backlight for a lighting device or a portable telephone. In such a light-emitting device, in order to protect the light-emitting element from overvoltage, a protective element such as a Zener diode is mounted on the light-emitting device. Such a protective element is disposed adjacent to the light-emitting element on the support substrate on which the light-emitting element is mounted, and is electrically connected to the light-emitting element. For example, the light-emitting device disclosed in Japanese Laid-Open Patent Publication No. Hei No. Hei. No. Hei. No. Hei. An LED chip, a protective element (for example, a Zener diode) disposed on the second electrode, and an encapsulating resin covering the LED chip and the conductive wire connected to the LED chip. Further, one electrode of the LED chip and the first electrode, and the other electrode of the first electrode and the second electrode, respectively, the electrode on the upper surface side of the wire bonding member and the electrode on the surface side of the first electrode are electrically conductively bonded to each other. In the light-emitting device, since the element is absorbed or blocked by the protective element, the light extraction efficiency is lowered. Therefore, if the protective element is placed in the recess to maintain the height of the protector, the protective element can be reduced or, as in the case of the illuminating device of the Japanese Patent Laid-Open No. 2007-opening, The light of the different optical elements of the optical member is reflected outside the light-emitting device, and the plurality of semiconductor elements are mounted on the support substrate, and the concave portion of the protective element is disposed on the surface of the light-emitting device. When the protective element is mounted on the surface of the light-emitting element, a part of the light that is placed on the surface is sealed in the concave portion. The efficiency of extraction of light is reduced. Further, since the light from the light-emitting element is absorbed by the seal, the output of the light-emitting device is significantly embossed by the impregnation of the light contained in the protective element, which takes time or effort. On the other hand, the protection element is connected by conductive wires, and the electrodes of Table 2 below are connected. The light from the light-emitting element is protected. As a whole of the light-emitting device, a recess is formed under the guard element, and the height of the element is lower than the breakage of light by the light-emitting element. -1 5022 The reflecting member disposed between the male member and the protective member is such that the protective member does not interfere with the passage of the light. Further, in consideration of ease of operation and the like, it is preferably used on the support substrate to make it suitable for the mouth portion. The end face direction of the light-emitting element in the recess formed in the lower surface is such that light absorbed in the body color of the protective element outside the light-emitting device is lowered by the protective element. In addition, it is not realistic to use the light to invert the recess, thereby preventing the cost of the recess. -5 - 1357671 SUMMARY OF THE INVENTION Accordingly, it is an object of the present invention to provide a light-emitting device having excellent optical characteristics and, in addition, an object of the invention to provide a method of manufacturing such a light-emitting device. In order to achieve the above object, a light-emitting device according to the present invention, a light-emitting element, a package in which the light-emitting element is disposed, and a conductive lead wire connecting an electrode provided on φ and an electrode of the light-emitting element, a front support body, and a support body The light-transmitting member support disposed on the support has a mounting portion in which the light-emitting element is disposed and a recess in which a semiconductor element different from the member is disposed, and the light-transmitting member covers the light-emitting element and an opening of the recess, and the package is There is a hole in front. The cavity is provided on a light-transmissive bottom surface covering the opening and an upper surface of a semiconductor element housed in the recess. Further, a method of manufacturing a light-emitting device, a light-emitting device, a package in which the light-emitting device is disposed, and a conductive wire that connects the upper electrode and the electrode of the light-emitting element; the front surface includes: a light-transmissive member that covers at least the light-emitting element; and a support portion that has the light-emitting element disposed on the support and a light-emitting device a recess of the semiconductor element; the light-emitting device includes the following: a first project to form a support having a recess in which the upper surface of the member is mounted; and a second project on the upper surface of the mounting portion of the front member The low-reliability of the semiconductor element is provided in the package, and the light-emitting element is preferably provided between at least the recessed members. The package-forming package is formed by the light-emitting element. 6- 1357671, accommodating the aforementioned semiconductor component in the aforementioned recess: third engineering, In the fourth aspect, the light-emitting element and the conductive wire are formed, and a cavity is formed in the concave portion, and a light-transmissive member covering at least the light-emitting element and the opening of the concave portion is disposed on the support. The foregoing and further objects and features of the present invention will become more apparent from the detailed description of the invention. [Embodiment] The light-emitting device is provided with a protective element on the bottom surface of the concave portion which is lower than the mounting surface of the light-emitting element, and further has a cavity in the concave portion in which the protective element is accommodated. Here, a difference in refractive index is generated between the light transmissive member covering the light-emitting element and the cavity. Then, the light emitted from the light-emitting element or the light from the phosphor is reflected on the boundary surface having a different refractive index and taken out to the outside of the light-emitting device. That is, the present invention can improve the light extraction efficiency of the light-emitting device by using the cavity provided in the concave portion as compared with the prior art. Further, these lights are taken out from the light-emitting device without loss in the concave portion, and the variation in the chromaticity of the light-emitting device is also small. The light-emitting device is provided with a cavity formed by arranging a light-transmitting member on the support in a recess in which the protective element is housed, thereby preventing intrusion of light into the recess. Therefore, the present invention can be compared with a light-emitting device in which a light-reflective entangled object is embedded in a concave portion, or a light-emitting device in which a reflecting member different from a light-transmitting member that covers a light-emitting element is provided between a light-emitting element and a protective element. An inexpensive light-emitting device that has less light loss due to the recess in which the protective element is housed and has a relatively simple structure. 1357671 In addition, the method of manufacturing a light-emitting device can be relatively simple compared to a light-emitting device in which a light-reflective charge is embedded in a recess in which a protective element is housed, or a light-emitting device in which a reflective member is provided between a light-emitting element and a protective element. A light-emitting device having less light loss in the concave portion is formed inexpensively. Further, in the method of manufacturing a light-emitting device according to the present invention, by forming a light-transmitting member that covers the light-emitting element on the support, it is also possible to cause the air bubbles to remain in the concave portion having the bottom surface lower than the mounting surface of the light-emitting element. Therefore, it is possible to manufacture a light-emitting device having less light loss in the concave portion in a relatively simple and inexpensive manner. The cavity formed in the package recess of the light-emitting device is preferably provided between the bottom surface of the light-transmitting member covering the opening and the upper surface of the semiconductor element housed in the recess. Further, the light transmissive member preferably has a convex projection from the opening of the concave portion toward the bottom surface of the concave portion. Further, the concave portion is provided in a region sandwiched by the plurality of mounting portions of the light-emitting element, and the support is preferably provided with an external connection electrode directly below the mounting portion. Further, the outer shape of the opening of the concave portion in a plan view and the outer shape of the semiconductor element in the concave portion are preferably from 1. 〇 to 2.5. Further, the fourth aspect of the invention includes that the material of the light transmissive member is continuously supplied in a direction slightly parallel to the κ surface of the light-emitting element. Further, the viscosity of the material of the light-transmitting member is adjusted in the fourth step -8 - 1357671 in accordance with the size of the concave portion corresponding to the size of the semiconductor element, so that the air bubbles remain in the concave portion. Further, the material of the light transmissive member is preferably a material containing at least one or more resins selected from the group consisting of an fluorenone resin and an epoxy resin, and containing a particulate phosphor in the resin. Further, the material of the light-transmitting member has a viscosity of 200 Pa · s or more and 500 Pa·s or less. Further, the similarity ratio of the outer shape of the opening of the concave portion in plan view to the outer shape of the semiconductor element accommodated in the concave portion in plan view is from 1 · 〇 to 2.5, and the ratio of the depth of the concave portion to the height of the semiconductor element accommodated in the concave portion It is better from 1 · 0 to 2.1 4 . A light-emitting device including a light-emitting element, a package in which the light-emitting element is disposed, and a conductive lead wire that connects an electrode provided on the package and an electrode of the light-emitting element, wherein the package includes a support and a light-transmitting member that at least covers the light-emitting element The support has a mounting portion for arranging a light-emitting element and a recess for accommodating a semiconductor element different from the light-emitting element, and the present inventors conducted various studies in order to reduce the loss of light by the concave portion. As a result, the opening portion of the concave portion accommodating the semiconductor element different from the light-emitting element is covered with a part of the light-transmitting member covering the light-emitting element, thereby providing a package in which the cavity is provided in the concave portion, thereby solving the problem. According to the present invention, by having a cavity in the concave portion, a refractive index difference is generated between the light transmissive member and the cavity of the opening portion of the covering concave portion. Then, with these boundary faces having different refractive indices as the reflecting faces, the light is reflected and emitted from the light-emitting device. Thus, the present invention does not cause light loss in the concave portion, so that the light extraction efficiency of the light-emitting device is improved as compared with the prior art. Further, it is preferable that the cavity in the package of the light-emitting device is provided between the bottom surface of the light-transmissive member covering the opening portion of the concave portion and the upper surface of the semiconductor element housed in the concave portion. This is because it is possible to suppress the light propagating through the light transmissive member from being absorbed by the semiconductor element housed in the concave portion. The light transmissive member has a protruding portion at the opening of the concave portion, and the protruding portion preferably has a convex bottom surface facing the bottom surface of the concave portion. This is because such a protruding portion does not cause light to enter the concave portion, thereby improving the effect of reflecting in the direction of the light-transmitting member on the upper surface of the support. Further, it is preferable to provide a cavity between the bottom surface of the light transmissive member or the protruding portion thereof and the upper surface of the semiconductor element housed in the concave portion. By providing a space due to the cavity between the bottom surface of the light transmissive member and the upper surface of the semiconductor element, the light outside the concave portion will not be irradiated to the direction of the semiconductor element, and not by the semiconductor element housed in the concave portion. Suffered losses. The outer shape of the opening portion of the recessed portion in plan view and the outer shape of the semiconductor element housed in the recessed portion in plan view are preferably from 1 · 〇 to 2 · 5. This is because if the size of the opening of the concave portion is too large with respect to the size of the semiconductor element, the amount of light that enters the concave portion increases. In addition, when the size of the opening is too small with respect to the size of the semiconductor element, the operability of the process of disposing the semiconductor element in the recess is lowered, so that it is not possible to manufacture a light-emitting device with good mass productivity. In a method of manufacturing a light-emitting device, the light-emitting device includes a light-emitting element, a package in which the light-emitting element is disposed, and a conductive lead wire that connects an electrode provided on the package and an electrode of the light-emitting element, and the package includes: a cover-coated at least light-emitting element a light-transmissive member having a mounting portion for arranging the light-emitting element and a recess for accommodating a semiconductor element of a size different from that of the light-emitting element, and having a small amount of light loss in the concave portion for relatively simple and inexpensive manufacturing. The inventors conducted various studies on the light-emitting device. As a result, the method of manufacturing a light-emitting device includes the following feature: a first project 'a concave portion having an opening formed on a mounting surface of a light-emitting element on a support body; and a second project, which is larger than a mounting surface of the light-emitting element The upper surface of the low-profile semiconductor element accommodates the semiconductor element in the recess; the third process, the light-emitting element and the conductive wire are arranged; the fourth project forms a cavity in the recess, and an opening covering at least the light-emitting element and the recess is disposed on the support The translucent member of the part is thus solved. In other words, since the method of manufacturing the light-emitting device does not require embedding the light-reflecting entangled material in the concave portion in which the semiconductor element is housed, it is possible to manufacture the light-emitting device having less light loss in the concave portion in a relatively simple and inexpensive manner. Further, in the method of manufacturing a light-emitting device, the formation of a light-transmitting member for a support and the formation of voids can be performed in the same process, whereby the construction of the light-emitting device can be simplified. In the case of such a method, the fourth step of forming the light transmissive member includes a process of continuously supplying the material of the light transmissive member in a direction slightly parallel to the mounting surface of the light emitting element. In other words, a material having a fluid transmissive member is introduced in a direction slightly parallel to the mounting surface on which the light-emitting elements are arranged, and the material is molded and cured to form a light-transmitting member. Further, "slightly parallel" is a surface parallel to the mounting surface of the light-emitting element, and a range of about ±10° is an allowable range. The viscosity of the material of the light transmissive member is adjusted in the fourth process in accordance with the size of the semiconductor element and the recess to be accommodated, so that bubbles remain to form voids. For example, the size and depth of the concave portion are the outer shape of the opening portion of the concave portion in the plan view -11 - 1357671, and the similarity ratio to the outer shape of the semiconductor element housed in the concave portion is from 1.0 to 2.5, and the depth D of the concave portion is accommodated in the concave portion. The ratio of the height H of the semiconductor element • (D/H) is preferably from 1.0 to 2.14. This is to minimize the size of the bubble to be independent of the decrease in the reliability of the light-emitting device. Further, the viscosity of the material of the light transmissive member is preferably 200 Pa·s or more and 500 Pa·s or less. This is because if the viscosity is low, no void is formed in the concave portion in which the semiconductor element is accommodated, and the concave portion is filled with the material of the light transmissive member. On the other hand, if the viscosity is too high, the workability of the material in which the light-transmitting member is disposed is lowered. Further, by adjusting the viscosity of the material of the light transmissive member, the material is convexly extended from the opening of the concave portion toward the bottom surface of the concave portion, and the protruding portion of the light transmissive member is formed in the opening portion of the concave portion. Thus, it is possible to form a light-emitting device in which a convex bottom surface in the protruding portion of the light-transmitting member and a top surface of the semiconductor element housed in the concave portion are provided with a cavity. The material of the φ light transmissive member is preferably a material containing at least one or more resins selected from the group consisting of an fluorenone resin and an epoxy resin, and containing a particulate phosphor in the resin. This is because the viscosity of the resin containing the particulate phosphor can be easily adjusted by adjusting the content ratio of the particulate abundance in the resin, and the light-emitting device including the egg-optic body in the light-transmitting member can be easily Make holes formed. The foregoing and the following objects and features of the present invention will become more apparent from the detailed description of the claims. BRIEF DESCRIPTION OF THE DRAWINGS Fig. 1 is a top plan view schematically showing an illuminating device -12-1357671 according to an embodiment of the present invention. Fig. 2 is a cross-sectional view schematically showing a cross section of the light-emitting device shown in Fig. 1 in the Π_Π direction. Fig. 3 is a cross-sectional view schematically showing a cross section of the light-emitting device in the ΠΙ-ΠΙ direction shown in Fig. 1. Fig. 4 is a bottom plan view schematically showing a light-emitting device in an embodiment of the present invention. Fig. 5 is a perspective view schematically showing a light-emitting device in an embodiment of the present invention. Fig. 6 is a cross-sectional view schematically showing a cross section of a light-emitting device according to another embodiment of the present invention. As shown in FIG. 1, the light-emitting device 1A of the present embodiment includes two light-emitting elements 10a and 101b as main constituent members, and a support 108 in which these light-emitting elements are arranged is mounted on the same support as the light-emitting elements. The other semiconductor element 102 on the body, and the first conductive wire 105 connecting the electrode of the semiconductor element 102 to the electrode of the support, and the electrode of the light-emitting element are connected to the second conductive wire 106 of the electrode of the support. In the present embodiment, the semiconductor element 102 mounted on the support separately from the light-emitting element is a protective element (for example, a Zener diode) for protecting the light-emitting element from an overvoltage. The support body 108 has a concave portion 103 recessed from the upper surface side on which the light-emitting elements 101a and 101b are disposed, and the protective member is housed in the concave portion 1 〇 3 . Further, on the upper surface of the support body 108, as shown in Figs. 2, 3, and 5, the light transmissive member 107 is disposed to block the opening of the concave portion 103, and the light transmissive-13-1357671 member 107 is at least covered. A light-emitting element on the upper surface side and a second conductive wire 106 connected thereto. Here, the light transmissive member disposed on the upper surface of the support 108 has a cavity. Here, the "void" in the present specification is a bubble of air or other gas inside the light transmitting member 107 and the support member, or a gap formed between the light transmitting surface and the concave portion. Such voids are arranged in the orientation of the outside of the semiconductor element, particularly the outer side of the upper portion of the semiconductor element. The shape of the hole is made. For example, many spherical holes may be in the recesses. By disposing the voids in a dispersed manner, the same effect as when the light-transmitting powder is used can be obtained. In other words, in the light transmissive member, light intrusion into the bottom surface of the concave portion is suppressed. Further, it is left between the bottom surface of the light transmissive member in the opening portion and the semiconductor element. The light transmissive member may be formed in the opening of the recessed portion and may be recessed. For example, a cavity may be provided between the side surface of the recessed portion and the inner wall surface of the recessed portion. The light transmissive surface plane covering the opening of the concave portion 103, the upper surface of the semiconductor element 102, and the cavity 111 of the concave portion 1〇3 are shown. The boundary surface of the hollow member 107 formed in the opening portion of the concave portion 103 can be incident on the side of the edge optical member 107. Therefore, the light emission of the present embodiment does not cause light to intrude into the inside of the concave portion 103, but to the light-emitting devices 10 1 a, 1 0 1 b , the concave portion 103 is formed between the light-transmitting members between the inner walls of the concave portions, and includes members The lower portion of the 107 is disposed on the side of the concave portion, that is, the light is diffused and diffused from the state member in which the light is dispersed from the open state, and the position of the hole is not limited to the inner wall of the upper surface portion of the upper portion. As shown in the semiconductor element 3, the hole 1 1 1 and the light-transmitting interface are provided between the inner wall of the lower surface of the member 107, and the outer hole 14 - 1357671 which can be placed on the outer surface of the device 100 can be placed on the support. The process of forming the light transmissive 107 on 1 08 is integrally formed. For example, it is possible to form a stencil and a mask on the surface of the support ITO 8 and then print the translucent member 107. This method is a method of feeding a material and arranging it in a direction slightly parallel to the upper surface of the support body, thereby covering the respective members of the upper surface of the support body 108. Therefore, the concave portion 103 is not completely filled with the material of the light transmitting member 107, but a material in which the cavity 1 is formed in the concave portion 1〇3 and the light transmitting member 107 is disposed. The material of the transmissive member 107 of the present embodiment is previously adjusted to a predetermined viscosity in consideration of the size of the opening of the recessed portion 103, the ease of operation of the arrangement of the material, and the like. For example, in order to form a light-emitting device containing a phosphor in a light-transmitting member, YAG light is used as a fluorescent material, and an fluorenone resin is used as a material for a light-transmitting member, and mixed. The viscosity of the material thus produced was measured by a B-type viscometer and was set to be 200 Pa·s or more and 500 Pa·s or less. Further, the manufacturing method of the present embodiment utilizes the fact that when the material of the member is placed on the upper surface of the support, the concave portion recessed from the upper surface of the support on which the hair piece is mounted is likely to be void due to the remaining air bubbles. That is, the protective member is accommodated in the concave portion of the recess so that the bubble remains around the protective member, thereby forming a void. Therefore, according to the method for manufacturing a light-emitting device of the present invention, it is possible to combine the work of the light-transmitting member that covers the light-emitting element on the upper surface of the support, and the use of the remaining space in the concave portion having the bottom surface lower than the light-emitting element mounting surface. The cavity is formed. The light-emitting device of the present embodiment and the optical material system in which the upper surface of the upper surface of the optical member is embedded in the concave portion accommodating the protective member are tuned to form a light-transmitting light element to form the protective medium-receiving member. The device reflection of the engineering reflection -15-1357671 is a light-emitting device with high light extraction efficiency which can be manufactured relatively easily and inexpensively. Further, in the light-emitting device of the present embodiment, as shown in Fig. 6, the protruding portion 112 of the light transmissive member 107 can be provided in the opening portion of the concave portion 103. The protruding portion 112 is a portion having a convex surface that protrudes convexly in the direction of the bottom surface of the concave portion in the light transmissive member 107. Further, it is also possible to have a cavity 1 1 1 between the convex bottom surface of the protruding portion 112 and the upper surface of the semiconductor element 1 〇 2 accommodated in the concave portion. The protruding portion 1 1 2 of such a light transmissive member can be formed by adjusting the shape of the light transmissive member having a certain viscosity and then solidifying it. That is, after adjusting the viscosity of the material of the light-transmitting member, the fluid material is convexly extended from the opening of the concave portion toward the bottom surface of the concave portion, and is solidified when it is in a desired shape. Further, by appropriately adjusting the viscosity of the material of the light transmissive member, it is possible to adjust the extent of the extension to the bottom surface of the concave portion. Thereby, a cavity can be formed between the convex bottom surface of the protruding portion and the upper surface of the semiconductor element housed in the concave portion, or the size can be adjusted. Alternatively, in the cavity 111 in the present embodiment, the light transmissive member 107 which is formed in other processes in advance may be disposed on the upper surface of the support 108, and the concave portion in which the semiconductor element is disposed may be used as a part of the light transmissive member 107. The opening is blocked and thus set. In other words, among the light transmissive members 107 that are disposed on the upper surface of the support 108 for covering the light-emitting elements, a lower surface of the light-transmitting member 107 that blocks the opening of the concave portion 103 and the concave portion 103 are formed. The cavity can be reflected by the lower surface of the light transmissive member and taken out to the outside. Further, in consideration of the improvement of the productivity, it is preferable to form a method for forming a void while forming a light-transmitting member covering the light-emitting element and the conductive wire as described in the above-mentioned Japanese Patent Publication No. Hei. In the present specification, the upper surface of each member is the surface on which the shape of the support is formed, and the surface on which the light-emitting element is mounted is the upper surface, and the surface facing the upper surface is the bottom surface. Further, the faces connecting the upper surface and the bottom surface are side faces. The light-emitting device 100 of the present embodiment includes the pair of externally connected electrodes 110a and 110c'. When the light-emitting device 1 is mounted on a wiring board (not shown) by soldering, the electrodes are externally connected to the electrodes 11a and 110c. It is connected to the electrode of the wiring substrate. At this time, the external connection electrodes 1 1 0 a and 1 1 〇 c can also serve as a heat dissipation path from the support to the wiring substrate via the solder. Therefore, when the mounting portion of the light-emitting element is disposed slightly above the external connection electrode provided on the bottom surface side of the support, the heat dissipation path can be shortened, and the heat dissipation of the light-emitting device can be improved. Further, when the light-emitting device 1' of the present embodiment is provided on the support body 108 when the mounting portions of the plurality of light-emitting elements 101a and 101b are disposed, the support bodies are disposed separately as viewed from the upper surface direction of the support body. It is preferable that an opening portion for accommodating a concave portion of a semiconductor element different from the light-emitting element is provided in a region sandwiched between the plurality of mounting portions 104b of the plurality of light-emitting elements. Further, it is preferable that the positive and negative pair of external connection electrodes 110a and 110c of the light-emitting device 100 are disposed directly below the respective mounting portions 104a of the light-emitting elements i?i, i?lb. That is, 'the external connection electrodes ii〇a, hoc disposed on the back surface of the support body 108 constituting the light-emitting device 1A' are externally opened from the upper surface (shown in FIG. 1) of the support body 108 (shown in FIG. 4). The shape of the arrangement pattern of the vertical projection mounting portion 104b is preferably a shape including at least a part of the projection shape of the -17-1357671, and it is more preferable to have all of the shapes including the projection shape. For example, in the light-emitting device of the present embodiment, as shown in FIG. 4, the positive and negative external connection electrodes 110a and 110c disposed on the bottom surface of the support body extend from both end portions of the support body 108 to the light-emitting elements 10a and 10b. The mounting part of the lb is directly below the 04b. When the plurality of light-emitting elements are mounted on the support by the arrangement relationship between the external connection electrodes and the mounting portions of the light-emitting elements, the recesses or the holes provided in the recesses do not hinder the wiring from the mounting portion of the light-emitting elements via the external connection electrodes. Heat dissipation of the substrate. Therefore, the output of the light-emitting device can be improved without lowering the heat dissipation of the light-emitting device. Positive and negative pairs of electrodes are provided in the recess for accommodating the semiconductor element, and electrical connection of these electrodes and the semiconductor element can also be performed in the recess. The connection between the electrode in the concave portion and the electrode of the semiconductor element can, for example, be such that the positive and negative electrodes exposed on the bottom surface of the concave portion and the electrode of the semiconductor element face each other and are joined by bumps or the like, or conductive wires can be used. The electrode on the upper surface of the semiconductor element is connected to the electrode on the bottom surface of the recess. It is preferable that all of the conductive wires connecting the electrodes of the semiconductor element and the electrodes in the concave portion are accommodated in the concave portion. That is, the topmost portion of the conductive wire is preferably lower than the upper surface of the support on which the light-emitting element is disposed. Thereby, the translucent member 107 is less affected by the conductive wire, and the deterioration of the reliability of the light-emitting device due to the metal fatigue of the conductive wire can be eliminated. In the light-emitting device of the present embodiment, a structure having a concave portion between the light-emitting element and the light-emitting element different from the light-emitting element has a larger amount of light in a region sandwiched by the light-emitting element. If the light intrudes into the concave portion, the light loss is also Change more -18- 1357671. In order to reduce the loss of light in a light-emitting device of such a structure, the present invention is particularly preferably applied. Hereinafter, each constituent member in the light-emitting device of the present embodiment will be described in detail. (Light-emitting device) In the present embodiment, a semiconductor device in which a light-emitting element and a protection element are disposed on a support is described. However, the present invention is not limited to such a configuration, and a light-receiving element or another protective element (resistance, A semiconductor device such as a transistor or a capacitor, or an element in which at least two or more of them are combined. The light-emitting element, the protective element or other semiconductor element housed in the recess may be one or plural. The luminescent color of the illuminating element may be any of red, green or blue, or a combination of these colors. The light-emitting element of the present embodiment is preferably a semiconductor light-emitting device having an active layer as a light-emitting device having a fluorescent material, and the active layer can emit light having a wavelength at which the fluorescent material can be excited. Examples of such a semiconductor light-emitting device include various semiconductors such as ZnSe and GaN, and nitride semiconductors (InxAlYGai-X.YN, OSX, OSY, and χ) which emit light of a short wavelength which can efficiently excite a fluorescent material. +Ygi). Various light-emitting wavelengths can be selected by using the material of the semiconductor layer or its crystallinity. When a nitride semiconductor is used as the material of the light-emitting element, materials such as sapphire, spinel, SiC, Si, ZnO, or GaN can be suitably used for the semiconductor substrate for laminating the semiconductor. In order to form a nitride semiconductor having good crystallinity in a mass production manner, a sapphire substrate is preferably used. A nitride semiconductor can be formed on the sapphire-19-1357671 stone substrate by MOCVD or the like. Further, the semiconductor substrate can also be removed after laminating the semiconductor layers. In the case of a light-emitting device that emits white mixed light, the light-emitting wavelength of the light-emitting element is in the range of 400 nm or more and 530 nm or less in consideration of the complementary color relationship with the light-emitting wavelength from the fluorescent material or the deterioration of the sealing resin. More preferably, it is 420 nm or more and 490 nm or less. In order to further improve the excitation and luminous efficiency of the light-emitting element and the fluorescent material, it is preferably 4 5 Onm or more and 475 nm or less. As a material of the light-emitting element that emits red light, a gallium aluminum arsenide semiconductor or an aluminum indium gallium phosphorus semiconductor is preferable. Further, in order to form a color display device, it is preferable to combine a red light-emitting element having a light-emitting wavelength of from 610 nm to 700 nm, a green color of from 495 nm to 565 nm, and a blue light-emitting wavelength of from 43 Onm to 490 nm. After the light-emitting elements are fixed to the support, the electrodes of the light-emitting elements and the conductor wirings of the support are respectively connected by conductive wires. In particular, the bonding member for fixing the light-emitting element is not particularly limited, and an insulating adhesive such as an epoxy resin or a eutectic material containing Au and Sn, a low-melting-point metal material, or a conductive adhesive containing a resin can be used. Agent or glass, etc., the resin contains a conductive material. Here, the conductive material contained in the conductive adhesive is preferably 11, 11, or §, and more preferably, if the content of the § is 80% to 90% of the Ag adhesive, A light-emitting device that also has excellent heat dissipation. Further, the semiconductor element having the electrode on the bottom surface side can be bonded to the support by a conductive adhesive containing a metal material such as silver, gold or palladium. In the case of a light-emitting element in which a nitride semiconductor is laminated on a light-transmitting sapphire substrate, -20 to 1357671, examples of the bonding member include an epoxy resin, an anthrone, and the like. In this case, a metal material of silver or aluminum may be disposed on the bottom surface of the light-emitting element (that is, the surface on the side opposite to the surface on which the nitride semiconductor is laminated in the sapphire substrate. Hereinafter, the same in the paragraph). For example, a metal layer can be formed by vapor deposition or sputtering of a metal material of silver or aluminum on the bottom surface of the light-emitting element. As a result, the light reflectance of the bottom surface of the light-emitting element is improved. Therefore, when the resin material is used as the bonding member, deterioration of the resin due to light or heat from the light-emitting element is suppressed, and the light extraction efficiency of the light-emitting device is improved. Further, a metal layer made of silver or aluminum and a eutectic layer made of Au or Sn are laminated in this order from the bottom surface side of the light-emitting element. Thereby, the light reflectance between the bottom surface of the light-emitting element and the eutectic layer is improved. Further, when the eutectic material contains a material that absorbs at least a portion of the light from the light-emitting element, the light extraction efficiency of the light-emitting device is improved because the loss of light on the bottom surface side of the light-emitting element is reduced. The light-emitting element is fixed to the light-emitting element mounting portion provided on the upper surface of the support body described below by a bonding member. In the present embodiment, the light-emitting element is fixed to the metal member provided on the upper surface of the support. However, it is not limited to such a mode. The light-emitting element may be mounted on the insulating member constituting the support. (Electrically Conductive Wire) The conductive wire is required to be a wire having good ohmicity, mechanical connectivity, electrical conductivity, and thermal conductivity with respect to the electrode of the light-emitting element. The thermal conductivity is preferably O.Ocal / ( s ) ( cm 2 ) ( t : /cm ) or more, more preferably -21 - 1357671 〇.5cal / ( s ) ( cm 2 ) ( ° C /cm ). Further, in consideration of operability, etc., the diameter of the conductive wire is preferably φ ΙΟ μηη or more and φ 45 μmη or less. When the light-transmitting member contains a fluorescent material, the conductive wire is easily broken at the interface between the portion containing the fluorescent material and the portion not containing the fluorescent material. Therefore, it is more preferable that the diameter of the conductive wire is 25 μm or more, and more preferably 35 μm or less from the viewpoint of ensuring the light-emitting area of the light-emitting element and the ease of handling. Specific examples of such a conductive wire include conductive wires using metals such as gold, copper, platinum, aluminum, and alloys thereof. (Support) The package of the present embodiment is composed of a support in which a semiconductor element and an electrode are disposed, and a light transmissive member in which the semiconductor element is covered. First, as the support in the light-emitting device of the present embodiment, a plate-shaped support body in which a conductor wiring is formed on an insulating substrate can be suitably used. The light-emitting element is disposed on a mounting portion provided on a main surface of the plate-shaped support. As a support body having no side walls surrounding the side surface of the light-emitting element, light emitted from the side surface direction of the light-emitting element can be taken out to the outside without being lost. The insulating substrate of the present embodiment is a rectangular parallelepiped having a substantially rectangular upper surface, and has a concave portion recessed from the upper surface side toward the bottom surface side at a substantially central portion of the upper surface. Further, on the upper surface of the insulating substrate, a metal member for mounting the light-emitting element and two pairs of positive and negative electrodes are provided. A recess is provided between the electrodes and the metal material. Further, an electrode is provided on the bottom surface of the concave portion, and the electrode is electrically connected to an electrode provided on the upper surface of the insulating substrate. Further, in consideration of the size and shape of the semiconductor element in which the metal member is used as the mounting portion, and the ease of stretching of the conductive wire, etc., it is appropriately adjusted.

1357671 整在絕緣性基板上設置的電極以及金屬 構成本方式的支撐體的絕緣性基板 件的上表面，在搭載了發光元件的區域 有從上表面側向底面側凹陷的凹部。在該 光元件不同的半導體元件，例如保護元件 部，俯視其開口部的外形是略正方形，但 能夠製成爲與容納在凹部內的半導體元件 形狀匹配的形狀及大小。另外，同樣地， 照容納的半導體元件的高度及與凹部內的 來適當地調節。如圖1所示，在第一發分 載部104b和第二發光元件10 lb的搭載g 支撐體108的略中央設置凹部103爲佳。 體的角落上設置凹部的發光裝置（例如， 體，在支撐體的長度方向上，具有依次配 件的搭載部、第二發光元件的搭載部、凹 光裝置等）比較，本方式中的發光裝置， 設置凹部，能夠減少對配光性的影響。 另外，例如，在形成透光性構件的同 凹部的大小及深度乃俯視凹部的開口部的 納在凹部的半導體元件的外形的相似比是 而且，凹部的深度、與容納在凹部的半導 比是從1 . 0到2.1 4爲佳。這是因爲若相對 大小凹部的大小過大，則形成空洞的氣泡 件的形狀及位置 其搭載半導體元 側的區域上，具 凹部容納著與發 。在本方式的凹 並不限定於此， 的大小、數量、 凹部的深度可按 電極的連接方式 :元件1 0 1 a的搭 5 104b之間，在 由此，與在支撐 從上表面看支撐 置了第一發光元 部的支撐體的發 通過在支撐體上 時形成空洞時， 外形、與俯視容 從 1 · 0 到 2.5， 體元件的高度的 於半導體元件的 也變大，於是擔 -23- 1357671 心這樣的氣泡受到發光元件的發熱而熱膨脹，由此 置的可靠性、光學特性下降了。 . 作爲絕緣性基板的材料，可適宜地利用在環氧 . 含有玻璃成分的玻璃環氧基板、以陶瓷爲材料的基 在發光裝置中要求高對比度時，通過使絕緣性 母材中含有Cr203、Mn02、Fe203等顏料，從而絕 板成爲暗色系爲佳。或者，爲了賦予絕緣性基板高 • 射率，使其含有二氧化鈦等白色系的顏料爲佳。 特別地，在希望高耐熱性、高耐光性時，以陶 緣性基板的母材爲佳。陶瓷的主材料氧化鋁、氮化 來石等爲佳。在這些主材料中添加燒結助劑等，通 可得到陶瓷的基板。例如，可列舉原料粉末的9 〇 ” 量百分比是氧化鋁，作爲燒結助劑，添加4〜1 0重 比的黏土 '滑石 '氧化鎂、氧化鈣、及矽石等，且： 〜17〇〇 °C的溫度範圍內使其燒結的陶瓷、或者原料 ® 40〜60重量百分比是氧化鋁，作爲燒結助劑，添力 40重量百分比的硼矽酸玻璃、堇青石、鎂橄欖石、 等’且在800〜1 200°C的溫度範圍內使其燒結的陶 胃樣的陶瓷基板能夠在燒成前的印刷電路基板階段 種的形狀。因此，能夠容易地形成具有本方式的凹 @ 14基板。另外，在燒成前的印刷電路基板階段能 S種圖形形狀的導體佈線。例如，通過將含有鎢的 Μ的材料絲網印刷，能夠形成用於作爲導體佈線、 %件的搭載部的金屬材料的基底層。在這些基底層 發光裝 樹脂中 Κ ° 基板的 緣性基 的光反 瓷爲絕 鋁、莫 過燒結 “96雷 量百分 £ 1500 粉末的 ]6 0〜 莫來石 瓷等。 做成各 部的絕 夠實施 膠黏劑 半導體 上，將 -24 - 1357671 陶瓷的材料燒成後，通過以銀、金、或鋁爲材料的鍍金或 濺射，來配置最表面的金屬材料。最表面用金屬材料被覆 ，該金屬材料對來自發光元件的光具有高反射率爲佳。 (透光性構件） 透光性構件的材料沒有特別限定，例如，可以使用矽 酮樹脂、環氧樹脂、尿素樹脂、氟樹脂、以及含有至少一 種以上這些樹脂的混合樹脂等、耐候性出色的透光性樹脂 。另外’透光性構件不限於有機物，也可以使用玻璃、矽 膠等耐光性出色的無機物。另外，本方式的透光性構件可 以添加黏度增量劑、光擴散劑、顏料、螢光物質等、與用 途對應的所有構件。例如，可以添加與發光裝置的發光色 對應的著色劑。另外，作爲光擴散劑，例如可以列舉鈦酸 鋇、氧化鈦、氧化鋁、二氧化矽、碳酸鈣、以及包含至少 一種以上這些成分的混合物等。並且，能夠通過將透光性 構件的光出射面側製成所希望的形狀，使其具有透鏡效果 。具體地，除了平板狀、凸透鏡形狀、凹透鏡形狀以外， 還可以形成從發光觀測面看成爲橢圓形狀或組合多個前述 形狀的形狀。 (螢光物質） 本方式的發光裝置可以使透光性構件中含有螢光物質 。作爲這樣的螢光物質的一例，有以下所述的含有稀土族 元素的螢光物質。 -25- 1357671 具體地，可列舉具有從Υ、Lu、Sc、La、Gd、Tb、及 Sm群中選擇的至少一個元素和從Al、Ga、及In群中選擇 的至少一個元素的石榴石（garnet )型螢光物質。特別地 ，鋁石榴石系螢光體是含有A1、和從Y、Lu、Sc、La、 Gd、Tb、Eu、Ga、In及Sm中選擇的至少一個元素，且用 從稀土族元素中選擇的至少一個元素來啓動的螢光體，是 用從發光元件出射的可見光或紫外線來激勵發光的螢光體 。例如，可列舉除釔鋁氧化物系螢光體（YAG系螢光體） 以外，T b 2.9 5 C e。.。5 A 1 5 〇 1 2、Y 2.9。C e 〇 .。5 T b。. 0 5 A 1 5 〇 1 2、 Y 2 . 9 4 C e Q . 〇 5 Ρ Γ 0 . 01 A 1 5 0 1 2、Y 2 . 9。C e。.。5 P Γ。.。5 A 1 5 〇 1 2 等。在它 們中，特別在本實施方式中，利用含有Y、且用Ce或pr 啓動、不同組成的2種以上的釔鋁氧化物系螢光體。 另外，氮化物系螢光體是含有N，且含有從Be、Mg 、Ca、Sr、Ba、及Zn中選擇的至少一個元素和從C、S i 、Ge、Sn、Ti、Zr、及Hf中選擇的至少一個元素，用從 稀土族元素中選擇的至少一個元素來啓動的螢光體。作爲 氮化物系螢光體，可列舉例如（SrmEuo.H ) 2Si5N8、（ Ca〇.9 8 5 Eu〇.〇i5) 2Si5Ne、 （ Sr〇.679Ca〇.29lEu〇.〇3) 2SisNs 等 o 以下，對本發明關於的實施例進行詳細描述。而且， 不用說本發明不僅限定於以下所示的實施例。 圖1是模式性顯示本實施例中的發光裝置1 00的頂視 圖。圖2是模式性顯示將圖1的發光裝置100沿Π — Π方 向切斷時的剖面的剖面圖。圖3是模式性顯示將圖1中所 -26- 1357671 示發光裝置100沿ΠΙ — ΠΙ方向切斷時的剖面的剖面圖。另 外’圖4是模式性顯示本實施例的發光裝置1〇〇的底面圖 。圖5是模式性顯示本實施例的發光裝置1 00的立體圖。 如圖1所示，本實施例中的發光裝置100具備：具有 向發光元件供給電力的第一電極l〇4a及第二電極l〇4c的 平板狀的支撐體108，以設置在該支撐體108的上表面的 金屬構件104b作爲搭載部而配置的多個發光元件i〇ia、 101b’連接第一發光元件i〇ia及第二發光元件i〇1b的電 極和第一電極l〇4a及第二電極l〇4c的第二導電性導線 1 〇6 ’以及被覆發光元件1 0 1 a、1 〇 1 b及第二導電性導線 1 〇 6的透光性構件1 〇 7。 本實施例的發光元件，是2個以氮化鎵系化合物半導 體爲材料的發藍色系的光的LED晶片l〇la、lQlb。這些 LED晶片，俯視上表面時的外形是500μιηχ290μιη (長X寬 )的長方形，在底面側配置作爲材料含有Au及Sn的共晶 材。這些LED晶片通過共晶材分別接合在搭載部上，該 搭載部以設置在支撐體的上表面的銀爲最表面。 支撐體在以陶瓷爲材料的絕緣性基板上，以鎢爲基底 層，依次鍍有鎳、金及銀。通過這些金屬材料的配置，形 成各電極及金屬構件l(Mb。進而，支撐體108在絕緣性基 板的上表面’在被LED晶片101a和LED晶片101b的2 個搭載部夾著的區域上設置具有開口部的凹部1〇3。在該 凹部103容納著保護LED晶片101a、101b免受過電壓破 壞的保護元件1〇2。進而’本實施例的發光裝置在對凹部 -27- 1357671 1 03的開口部進行被覆的透光性構件1 〇7的下表面、和容 納在凹部1〇3的保護元件102的上表面之間具有空洞ill 〇 本實施例的保護元件102是在上表面和底面具有極性 不同的電極的稽納二極體。以銀膠黏劑作爲導電性黏接劑 ，保護元件102被黏接在凹部103的底面，該底面側的電 極通過導電性黏接劑，與在凹部1 03底面露出的導體佈線 連接。另外，保護元件102的上表面的電極通過第一導電 性導線105，與設置在支撐體的上表面的第一電極l〇4a連 接。 如圖1所示，本實施例的支撐體108具有：在配置發 光元件的上表面，通過第二導電性導線1 0 6與發光元件連 接的正負成對的電極（第一電極104a及第二電極l〇4c) ;以及與這些電極絕緣、設置在同一支撐體的上表面的金 屬構件104b。2個LED晶片101a、101b搭載在與電極分 開設置的金屬構件104b上。由此，可在支撐體上與連接 電極的導體佈線的配置圖形分開設置散熱通路，因此能夠 製成散熱性高的發光裝置。 如圖4所示，本實施例的發光裝置1〇〇，從其背面方 向看’在支撐體108的長度方向上，互相面對的一對側面 有切口，從該切口的部位的內面向支撐體108的中央部延 伸設置第一外部連接電極110a及第二外部連接電極ll〇c 。爲了與各半導體元件連接，這些第一外部連接電極ll〇a 及第二外部連接電極110c與配置在支撐體108的上表面 -28- 1357671 的第一電極l〇4a、第二電極104c以及配置在凹部i〇3底 面的電極導通。即，第一外部連接電極ll〇a及第二外部 * 連接電極ll〇c，通過在支撐體內埋設的導體佈線，分別與 . 第一電極l〇4a及第二電極104c電連接。第一外部連接電 極110a及第二外部連接電極110c，在將發光裝置1〇〇焊 錫安裝在外部的佈線基板上時，通過該焊錫與佈線基板連 接。 • 如圖2及圖3所示，本實施例的空洞111是在形成本 實施例的發光裝置1 00的透光性構件1 07的工程中，通過 在凹部1 03內氣泡殘存而形成的。即，在支撐體1 〇8上配 置各半導體元件並用導電性導線連接各電極後，通過印刷 含有YAG系螢光體的矽酮樹脂使其被覆發光元件、導電 性導線以及凹部的開口部而形成。本實施例的發光裝置的 製造方法略如下所述。 首先，在以陶瓷爲絕緣性基板的材料的支撐體1 0 8的 ^ 集合基板上，使多個LED晶片排列，接著在凹部容納保 護元件1 03，並利用導電性導線等進行電連接。而且，以 銀膠黏劑爲黏接劑，保護元件103被黏接在配置在凹部的 底面的導體佈線上，保護元件103的底面的電極通過銀膠 黏劑與導體佈線電連接。 接著，沿著LED晶片的排列直線狀地配置含有YAG 系螢光體的矽酮樹脂，以便將多個LED晶片、導電性導 線及凹部的開口部一起被覆。這時，含有YAG系螢光體 的矽酮樹脂的黏度爲30 OPa · s。另外，本實施例的保護元 -29- 1357671 件，俯視其上表面的外形尺寸爲240μιη><240μηι的正方形 ，配置在凹部的底面時的高度是0.14mm。將這樣大的保 護元件容納在凹部時，凹部的開口部的外形尺寸乃一邊爲 0.24mm以上、0.60mm以下的正方形，從開口部上表面到 凹部底面的深度爲0.15mm以上、0.30 mm以下爲佳。本實 施例中，凹部的開口部的外形尺寸是 0,50mmx0.50mm的 正方形，深度是〇.15mm。而且，使矽酮樹脂固化後，利 用切割來切斷透光性構件及絕緣性基板，以規定的大小使 其個片化，由此得到本實施例的發光裝置1 00。 而且，在形成支撐體108的上表面外形的矩形的四角 或邊上分別形成的標記（包括直線或L字型形狀的記號） 109除了可作爲標識來識別設置在發光裝置1〇〇上的正負 成對的外部連接電極1 1 0 a、1 1 0 c的極性外，還可在切割 集合基板進行個片化時，作爲示出切割線的記號來利用。 本發明，能夠使用在照明用光源、各種指示器用光源 、車載用光源、顯示器用光源、液晶的背光用光源等上。 在示出和描述各種首選的實施例後，本發明對於那些 具有一般技能的技術人員應是顯而易見的。可預見本發明 並不限於所揭示的特定的實施例，它被認爲只是說明本發 明的槪念’而不應被解釋爲本發明的限定範圍。本發明適 合在權利要求所定義的發明範圍內進行各種修改和變化。 本申請是基於在2〇〇7年7月19曰入檔的日本特開 2007-188709號公報和在2007年12月27日入檔的日本特 開20〇7_335793號公報，與此有關的內容作爲參考。 -30- 1357671 【圖式簡單說明】 圖1是模式性顯示本發明的一個實施例關於的發光裝 置的頂視圖。 圖2是模式性顯示圖1中所示的沿Π _ Π方向的發光 裝置的剖面的剖面圖。 圖3是模式性顯示圖1中所示的沿m_m方向的發光 裝置的剖面的剖面圖。 圖4是模式性顯示本發明的一個實施例中的發光裝置 的底面圖。 圖5是模式性顯示本發明的一個實施例中的發光裝置 的立體圖。 圖6是模式性顯示本發明的另一個實施例關於的發光 裝置的剖面的剖面圖。 【主要元件符號說明】 100、200 :發光裝置（light : emitting ： device ) 101a、l〇lb:發光元件（light: emitting: element) 102:半導體元件（semiconductor: element) 103:凹部（cavity) 104a:第一電極 104b:金屬構件（metallic: component) 104c :第二電極 105 :第一導電性導線 -31 - 1357671 1 Ο 6 :第二導線性導線 107 :透光性構件（translucent : member) 108:支撐體（base) 1 09 :標記（mark ) 1 10a :第一外部連接電極 110c:第二外部連接電極 1 1 1 :空洞（cavity )1357671 Electrode provided on the insulating substrate and metal The upper surface of the insulating substrate constituting the support of the present embodiment has a concave portion recessed from the upper surface side toward the bottom surface side in a region where the light-emitting element is mounted. The semiconductor element having different optical elements, for example, the protective element portion, has a substantially square outer shape in plan view of the opening, but can be formed into a shape and a size matching the shape of the semiconductor element accommodated in the concave portion. Further, similarly, the height of the semiconductor element to be accommodated and the inside of the concave portion are appropriately adjusted. As shown in Fig. 1, it is preferable to provide the concave portion 103 at the center of the first support portion 104b and the second light-emitting element 10 lb on which the g support 108 is mounted. A light-emitting device in which a concave portion is provided at a corner of a body (for example, a body having a mounting portion of a sequential fitting, a mounting portion of a second light-emitting element, a concave device, and the like in a longitudinal direction of the support) is compared with the light-emitting device of the present embodiment. , The recess is provided to reduce the influence on the light distribution. Further, for example, the size and depth of the same concave portion forming the light transmissive member are a similarity ratio of the outer shape of the semiconductor element in the concave portion in the opening portion of the concave portion in plan view, and the depth of the concave portion and the semiconductor ratio accommodated in the concave portion It is better from 1.0 to 2.1. This is because if the size of the concave portion of the relative size is too large, the shape and position of the bubble member forming the cavity are placed on the semiconductor element side, and the concave portion is accommodated and emitted. The recess in this embodiment is not limited thereto, and the size, the number, and the depth of the recess may be in the form of the connection of the electrodes: between the laps 5 104b of the element 1 0 1 a , thereby supporting the support from the upper surface When the hair of the support body in which the first light-emitting element portion is formed passes through the support body, the outer shape and the plan view are from 1 to 0 to 2.5, and the height of the body element is also increased in the semiconductor element, so that 23- 1357671 A bubble such as a heart is thermally expanded by the heat of the light-emitting element, and the reliability and optical characteristics of the light-emitting element are lowered. The material of the insulating substrate can be suitably used in an epoxy resin. When a glass epoxy substrate containing a glass component or a ceramic-based material is required to have high contrast in a light-emitting device, Cr203 is contained in the insulating base material. Pigments such as MnO2 and Fe203 are preferred because they are dark. Alternatively, in order to impart a high transmittance to the insulating substrate, it is preferable to contain a white pigment such as titanium dioxide. In particular, when high heat resistance and high light resistance are desired, the base material of the ceramic substrate is preferred. The main material of the ceramic is alumina, nitrided stone, etc. A sintering aid or the like is added to these main materials to obtain a ceramic substrate. For example, the amount of 9 〇 of the raw material powder is alumina, and as a sintering aid, 4 to 10 weight ratio of clay 'talc' magnesium oxide, calcium oxide, and vermiculite are added, and: ~17〇〇 In the temperature range of °C, the sintered ceramic, or the raw material® 40~60% by weight is alumina, as a sintering aid, adding 40% by weight of borosilicate glass, cordierite, forsterite, etc. The ceramic substrate which is sintered in the temperature range of 800 to 1 200 ° C can be formed in the shape of the printed circuit board before firing. Therefore, the concave @ 14 substrate having the present embodiment can be easily formed. In addition, it is possible to form a conductor wire having a pattern shape in the printed circuit board stage before the firing. For example, by screen printing a material containing tungsten, it is possible to form a metal material for the conductor wiring and the mounting portion of the % member. The basal layer. In these base layer luminescent resin, 光 ° the base of the substrate is light aluminum, not sintered, "96 liters of volume 1500 powder" 6 0 ~ mullite porcelain. In the case of the adhesive semiconductor, the material of the -24 - 1357671 ceramic is fired, and the metal material on the outermost surface is placed by gold plating or sputtering using silver, gold or aluminum. The outermost surface is coated with a metal material which has a high reflectance for light from the light-emitting element. (Translucent member) The material of the light transmissive member is not particularly limited, and for example, an anthracene resin, an epoxy resin, a urea resin, a fluororesin, a mixed resin containing at least one of these resins, or the like can be used, and the weather resistance is excellent. Translucent resin. Further, the light-transmitting member is not limited to an organic material, and an inorganic material excellent in light resistance such as glass or silicone can be used. Further, the light-transmitting member of the present embodiment may be added with a viscosity extender, a light diffusing agent, a pigment, a fluorescent material, or the like, and all members corresponding to the use. For example, a coloring agent corresponding to the luminescent color of the light-emitting device can be added. Further, examples of the light diffusing agent include barium titanate, titanium oxide, aluminum oxide, cerium oxide, calcium carbonate, and a mixture containing at least one of these components. Further, the light-emitting surface side of the light-transmitting member can be formed into a desired shape to have a lens effect. Specifically, in addition to the flat shape, the convex lens shape, and the concave lens shape, it is also possible to form an elliptical shape as seen from the light-emission observation surface or a combination of a plurality of the aforementioned shapes. (Fluorescent substance) The light-emitting device of the present embodiment can contain a fluorescent substance in the light-transmitting member. As an example of such a fluorescent substance, there is a fluorescent substance containing a rare earth element as described below. In particular, a garnet having at least one element selected from the group consisting of lanthanum, Lu, Sc, La, Gd, Tb, and Sm and at least one element selected from the group consisting of Al, Ga, and In is exemplified (garnet) type fluorescent substance. In particular, the aluminum garnet-based phosphor is at least one element containing A1 and selected from Y, Lu, Sc, La, Gd, Tb, Eu, Ga, In, and Sm, and is selected from rare earth elements. The phosphor that is activated by at least one element is a phosphor that excites light by visible light or ultraviolet light emitted from the light emitting element. For example, T b 2.9 5 C e other than the yttrium aluminum oxide-based phosphor (YAG-based phosphor). . . . 5 A 1 5 〇 1 2, Y 2.9. C e 〇 .. 5 T b. 0 5 A 1 5 〇 1 2, Y 2 . 9 4 C e Q . 〇 5 Ρ Γ 0 . 01 A 1 5 0 1 2, Y 2 . C e. . . . 5 P Γ. . . . 5 A 1 5 〇 1 2 and so on. Among them, in particular, in the present embodiment, two or more kinds of lanthanum aluminum oxide-based phosphors containing Y and starting with Ce or pr and having different compositions are used. Further, the nitride-based phosphor contains N and contains at least one element selected from Be, Mg, Ca, Sr, Ba, and Zn and from C, S i , Ge, Sn, Ti, Zr, and Hf. At least one element selected in the group, the phosphor activated by at least one element selected from the group consisting of rare earth elements. Examples of the nitride-based phosphor include (SrmEuo.H) 2Si5N8, (Ca〇.9 8 5 Eu〇.〇i5) 2Si5Ne, (Sr〇.679Ca〇.29lEu〇.〇3) 2SisNs, etc. The embodiments of the present invention are described in detail. Moreover, it is needless to say that the present invention is not limited to the embodiments shown below. Fig. 1 is a top plan view schematically showing a light-emitting device 100 in the present embodiment. Fig. 2 is a cross-sectional view schematically showing a cross section of the light-emitting device 100 of Fig. 1 taken along the Π-Π direction. Fig. 3 is a cross-sectional view schematically showing a cross section of the light-emitting device 100 shown in Fig. 1 taken along the ΠΙ-ΠΙ direction. Further, Fig. 4 is a bottom view schematically showing the light-emitting device 1 of the present embodiment. Fig. 5 is a perspective view schematically showing the light-emitting device 100 of the present embodiment. As shown in FIG. 1, the light-emitting device 100 of the present embodiment includes a flat-shaped support body 108 having a first electrode 104a and a second electrode 104a that supply electric power to the light-emitting elements, and is provided on the support. The plurality of light-emitting elements i〇ia, 101b' disposed as the mounting portion of the upper surface metal member 104b of 108 are connected to the electrodes of the first light-emitting element i〇ia and the second light-emitting element i〇1b, and the first electrode 10a and The second conductive wire 1 〇 6 ' of the second electrode 10c and the light-transmitting member 1 〇 7 covering the light-emitting elements 10 1 a, 1 〇 1 b and the second conductive wire 1 〇 6 . The light-emitting element of the present embodiment is two blue-light-emitting LED wafers L1, lQlb made of a gallium nitride-based compound semiconductor. These LED wafers have a rectangular shape of 500 μm χ 290 μm (length X width) when viewed from the upper surface, and a eutectic containing Au and Sn as a material is disposed on the bottom surface side. These LED chips are respectively bonded to the mounting portion by a eutectic material, and the mounting portion is made of silver provided on the upper surface of the support as the outermost surface. On the insulating substrate made of ceramic, the support is made of tungsten as a base layer, and nickel, gold and silver are sequentially plated. Each of the electrodes and the metal member 1 (Mb is formed by the arrangement of the metal materials. Further, the support body 108 is provided on the upper surface of the insulating substrate in a region sandwiched between the two mounting portions of the LED chip 101a and the LED chip 101b. a recessed portion 1〇3 having an opening portion. The protective member 1〇2 for protecting the LED chips 101a and 101b from overvoltage is accommodated in the recessed portion 103. Further, the light-emitting device of the present embodiment is in the concave portion -27- 1357671 1 03 The lower surface of the coated translucent member 1 〇 7 and the upper surface of the protective member 102 housed in the recess 1 〇 3 have a cavity ill. The protective element 102 of the present embodiment is on the upper surface and the bottom surface. An arrester diode having electrodes having different polarities. With a silver adhesive as a conductive adhesive, the protective member 102 is adhered to the bottom surface of the recess 103, and the electrode on the bottom side passes through the conductive adhesive, The conductor wirings on the bottom surface of the recessed portion 103 are connected. Further, the electrode on the upper surface of the protective member 102 is connected to the first electrode 104a provided on the upper surface of the support body via the first conductive wire 105. , The support body 108 of the embodiment has: positive and negative pairs of electrodes (the first electrode 104a and the second electrode 104a) connected to the light-emitting element through the second conductive wire 106 on the upper surface of the light-emitting element; The metal member 104b is provided to be insulated from the electrodes and provided on the upper surface of the same support. The two LED chips 101a and 101b are mounted on the metal member 104b provided separately from the electrode. Thereby, the conductor on the support and the connection electrode can be Since the arrangement pattern of the wiring is provided with the heat dissipation path separately, it is possible to manufacture a light-emitting device having high heat dissipation. As shown in Fig. 4, the light-emitting device 1 of the present embodiment is viewed from the back side thereof in the longitudinal direction of the support body 108. a pair of side faces facing each other have a slit, and a first outer connecting electrode 110a and a second outer connecting electrode 110c are extended from a central portion of the portion of the slit facing the support body 108. To be connected to the respective semiconductor elements, The first external connection electrode 11a and the second external connection electrode 110c and the first electrode 104a and the second electrode 104c disposed on the upper surface 280-1357671 of the support 108 and The electrodes disposed on the bottom surface of the recessed portion i3 are electrically connected. That is, the first external connection electrode 11a and the second external* connection electrode 11a are respectively connected to the first electrode 10a through the conductor wiring buried in the support body. The first external connection electrode 110a and the second external connection electrode 110c are connected to the wiring substrate by the solder when the light-emitting device 1 is soldered to the external wiring substrate. 2 and FIG. 3, the cavity 111 of the present embodiment is formed by the existence of air bubbles remaining in the recessed portion 103 in the process of forming the light transmissive member 107 of the light-emitting device 100 of the present embodiment. In other words, each of the semiconductor elements is placed on the support 1 to 8 and the electrodes are connected by a conductive wire. Then, the yoke-containing resin containing the YAG-based phosphor is printed to cover the openings of the light-emitting elements, the conductive wires, and the recesses. . The manufacturing method of the light-emitting device of this embodiment is slightly as follows. First, a plurality of LED chips are arranged on a collective substrate of a support body of ceramics as an insulating substrate, and then the protective element 103 is accommodated in the concave portion, and electrically connected by a conductive wire or the like. Further, with the silver adhesive as the adhesive, the protective member 103 is bonded to the conductor wiring disposed on the bottom surface of the concave portion, and the electrode on the bottom surface of the protective member 103 is electrically connected to the conductor wiring through the silver adhesive. Next, an anthrone resin containing a YAG-based phosphor is linearly arranged along the arrangement of the LED wafers so as to cover the plurality of LED chips, the conductive wires, and the openings of the concave portions. At this time, the viscosity of the fluorenone resin containing the YAG-based phosphor was 30 OPa · s. Further, the protection element -29-1357671 of the present embodiment has a square shape with an outer dimension of 240 μm><240 μm on the upper surface thereof, and a height of 0.14 mm when disposed on the bottom surface of the concave portion. When such a large protective element is housed in the concave portion, the outer shape of the opening portion of the concave portion is a square having a side of 0.24 mm or more and 0.60 mm or less, and the depth from the upper surface of the opening portion to the bottom surface of the concave portion is 0.15 mm or more and 0.30 mm or less. good. In the present embodiment, the outer diameter of the opening portion of the concave portion is a square of 0, 50 mm x 0.50 mm, and the depth is 〇.15 mm. Further, after the fluorenone resin is cured, the light-transmitting member and the insulating substrate are cut by dicing, and the sheet is formed into a predetermined size, whereby the light-emitting device 100 of the present embodiment is obtained. Moreover, marks (including marks of a straight line or an L-shape) formed respectively on the four corners or sides of the rectangle forming the outer shape of the upper surface of the support 108 can be used as a mark to identify the positive and negative signs provided on the light-emitting device 1 The polarity of the pair of external connection electrodes 1 1 0 a and 1 1 0 c can be utilized as a symbol showing the dicing line when the dicing collective substrate is diced. The present invention can be used for a light source for illumination, a light source for various indicators, a light source for a vehicle, a light source for a display, a light source for backlight of a liquid crystal, or the like. The invention will be apparent to those of ordinary skill in the art in the description and description of various preferred embodiments. The invention is not limited to the specific embodiments disclosed, and is considered to be illustrative only, and is not to be construed as limiting. The invention is susceptible to various modifications and changes within the scope of the invention as defined by the appended claims. The present application is based on Japanese Laid-Open Patent Publication No. 2007-188709, filed on Jul. 19, 2007, and Japanese Patent Application Laid-Open No. Hei. Reference. -30- 1357671 BRIEF DESCRIPTION OF THE DRAWINGS Fig. 1 is a top plan view schematically showing a light-emitting device according to an embodiment of the present invention. Fig. 2 is a cross-sectional view schematically showing a cross section of the light-emitting device shown in Fig. 1 in the Π _ Π direction. Fig. 3 is a cross-sectional view schematically showing a cross section of the light-emitting device taken along the m_m direction shown in Fig. 1. Fig. 4 is a bottom plan view schematically showing a light-emitting device in an embodiment of the present invention. Fig. 5 is a perspective view schematically showing a light-emitting device in an embodiment of the present invention. Fig. 6 is a cross-sectional view schematically showing a cross section of a light-emitting device according to another embodiment of the present invention. [Description of main component symbols] 100, 200: Light: emitting device: 101a, l〇lb: Light: emitting element: 102: Semiconductor: Element 103: Cavity 104a : first electrode 104b: metallic component 104c: second electrode 105: first conductive wire - 31 - 1357671 1 Ο 6 : second conductive wire 107 : translucent member : support 1 09 : mark 1 10a : first external connection electrode 110c: second external connection electrode 1 1 1 : cavity

112 :突出部（protuberance)112: Protuberance

-32--32-

Claims (1)

1357671 十、申請專利範圍 1- 一種發光裝置’其特徵在於，具備： * 具有電極的發光元件； - 和配置發光元件之同時，設置電極之封裝； 前述封裝更具備： 具有配置前述發光元件的搭載部及容納與前述發光元 件不同的半導體元件的凹部之支撐體； φ 和配置於支撐體上的透光性構件； 和連接設置在封裝的電極和前述發光元件的電極之導 電性導線； 其中，前述透光性構件乃被覆至少前述發光元件和前 述凹部的開口部， 前述封裝乃在前述凹部具有空洞。 2. 如申請專利範圍第1項記載的發光裝置，其中， 前述空洞乃設置在被覆前述凹部的開口部的透光性構 φ 件的底面、和容納在前述凹部的半導體元件的上面之間。 3. 如申請專利範圍第1項記載的發光裝置，其中， 前述透光性構件乃從前述凹部的開口部向前述凹部的 底面，具有凸狀的突出部。 4. 如申請專利範圍第1項記載的發光裝置，其中， 前述凹部乃設置在挾於前述發光元件的複數搭載部的 區域，前述支撐體乃在前述搭載部的略正下方，分別具備 外部連接電極。 5. 如申請專利範圍第1項記載的發光裝置，其中， -33- 1357671 令前述凹部的開口部平面所視外形、與令容納在前述 凹部的半導體元件平面所視的外形的相似比爲1.0到2.5 * 〇 • 6. 一種發光裝置的製造方法，具備發光元件 '和配 置該發光元件的封裝、和連接設置在該封裝上的電極和前 述發光元件的電極的導電性導線；前述封裝具備至少被覆 前述發光元件的透光性構件、及具有配置前述發光元件的 • 搭載部及容納與前述發光元件不同的半導體元件的凹部之 支撐體的發光裝置的製造方法，其特徵在於，包含： 形成具有在搭載前述發光元件的上面加以開口的凹部 的支撐體之第一工程； 和令前述發光元件的上面，配置於較前述發光元件之 搭載部的上面爲下處，在前述凹部容納前述半導體元件之 第二工程； 和配置前述發光元件及前述導電性導線之第三工程； Φ 和在前述凹部內形成空洞，並且將被覆至少前述發光 元件及前述凹部的開口部的透光性構件，配置於前述支撐 體之第四工程。 7·如申請專利範圍第6項記載的發光裝置之製造方 法，其中， 前述第四工程包含對於前述發光元件所搭載的上面， 呈略平行地’連續地供給前述透光性構件的材料的工程。 8.如申請專利範圍第7項記載的發光裝置之製造方 法，其中， -34- 1357671 前述透光性構件的材料的黏度乃根據對於前 元件的前述凹部的大小，在前述第四工程中，使 • 在前述凹部地加以調整。 - 9.如申請專利範圍第7項記載的發光裝置 法，其中， 前述透光性構件的材料乃包含選自矽酮樹脂 脂至少一種以上的樹脂’在該樹脂中含有粒子狀 φ 材料者。 1 〇 _如申請專利範圍第8項記載的發光裝置 法，其中， 前述透光性構件的材料的黏度乃200Pa . 5 0 0 P a · s 以下 ° 1 1 ·如申請專利範圍第6項記載的發光裝置 法，其中， 前述凹部的開口部平面所視的外形、與容納 9 部中的半導體兀件平面所視的外形的相似比爲1 ’前述凹部的深度、與容納在前述凹部中的半導 局度的比爲從1.0到2.1 4。 述半導體 氣泡殘存 之製造方 或環氧樹 螢光體的 之製造方 s以上' 之製造方 在前述凹 • 〇 到 2.5 體元件的 -35-1357671 X. Patent Application No. 1: A light-emitting device characterized by comprising: * a light-emitting element having an electrode; - a package for arranging an electrode while arranging the light-emitting element; and the package further comprising: mounting the light-emitting element And a support for accommodating the recess of the semiconductor element different from the light-emitting element; φ and a light-transmitting member disposed on the support; and a conductive wire connecting the electrode provided in the package and the electrode of the light-emitting element; The light transmissive member covers at least the light emitting element and the opening of the concave portion, and the package has a cavity in the concave portion. 2. The light-emitting device according to claim 1, wherein the cavity is provided between a bottom surface of the light-transmitting member that covers the opening of the concave portion and an upper surface of the semiconductor element housed in the concave portion. 3. The light-emitting device according to the first aspect of the invention, wherein the light-transmitting member has a convex protruding portion from an opening of the concave portion toward a bottom surface of the concave portion. 4. The light-emitting device according to claim 1, wherein the concave portion is provided in a region of the plurality of mounting portions of the light-emitting element, and the support body is externally connected to the mounting portion. electrode. 5. The light-emitting device according to claim 1, wherein -33 to 1357671 is such that the outer shape of the opening portion of the concave portion is similar to the outer shape of the outer surface of the semiconductor element accommodated in the concave portion. To 2.5 * 〇• 6. A method of manufacturing a light-emitting device comprising: a light-emitting element 'and a package in which the light-emitting element is disposed, and a conductive wire connecting an electrode provided on the package and an electrode of the light-emitting element; the package having at least A method of manufacturing a light-emitting device that covers a light-transmitting member that covers the light-emitting element, and a support device that includes a mounting portion that mounts the light-emitting device and a recess that accommodates a semiconductor element different from the light-emitting device, and includes: a first work of supporting a recess in which the upper surface of the light-emitting element is mounted; and an upper surface of the light-emitting element disposed below the upper surface of the mounting portion of the light-emitting element, and accommodating the semiconductor element in the recess a second project; and configuring the light-emitting element and the conductive wire Three works; [Phi] and the formation of voids in the concave portion, and the light transmissive member at least covering the light emitting element and the opening portion of the concave portion disposed in the fourth construction of the support member. The method of manufacturing a light-emitting device according to the sixth aspect of the invention, wherein the fourth aspect includes a process of continuously supplying the material of the light-transmitting member in a direction parallel to the upper surface of the light-emitting element. . 8. The method of manufacturing a light-emitting device according to claim 7, wherein the viscosity of the material of the light transmissive member is based on the size of the concave portion of the front member, and in the fourth project, Make adjustments in the aforementioned recesses. The light-emitting device method according to claim 7, wherein the material of the light-transmitting member contains at least one resin selected from the group consisting of an oxime resin resin, and the particulate φ material is contained in the resin. The illuminating device method according to claim 8, wherein the material of the light transmissive member has a viscosity of 200 Pa. 5 0 0 P a · s or less ° 1 1 · as described in claim 6 The light-emitting device method, wherein a similarity ratio of an outer shape of the opening portion of the concave portion to an outer shape viewed from a plane of the semiconductor element in the nine portions is 1 'the depth of the concave portion and the space accommodated in the concave portion The ratio of semi-guided degrees is from 1.0 to 2.1 4. The manufacturing method of the semiconductor bubble remaining or the manufacturing method of the epoxy tree phosphor s or above is manufactured in the above-mentioned concave 〇 to 2.5 body element -35-
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Families Citing this family (24)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2010028049A (en) * 2008-07-24 2010-02-04 Kyocera Corp Light-emitting device and lighting system
JP4621799B1 (en) 2009-05-22 2011-01-26 シャープ株式会社 Light reflecting sheet, light source device and display device
CN102439354B (en) * 2009-05-22 2015-04-08 夏普株式会社 Light source device, illuminating device, backlight device, liquid crystal display device, and display device
JP4519943B1 (en) 2009-05-22 2010-08-04 シャープ株式会社 Display device
JP5351723B2 (en) 2009-05-22 2013-11-27 シャープ株式会社 Light source device and display device
US9433046B2 (en) 2011-01-21 2016-08-30 Once Innovations, Inc. Driving circuitry for LED lighting with reduced total harmonic distortion
CN102263187A (en) 2010-05-31 2011-11-30 展晶科技(深圳)有限公司 Light emitting diode packaging structure and manufacture method thereof
TWI449223B (en) * 2010-11-02 2014-08-11 Hon Hai Prec Ind Co Ltd Light emitting diode lead frame
JP5583051B2 (en) * 2011-02-23 2014-09-03 京セラ株式会社 Light emitting element mounting substrate and light emitting device
US8507328B2 (en) * 2011-05-27 2013-08-13 Tsmc Solid State Lighting Ltd. Systems and methods providing semiconductor light emitters
KR101823506B1 (en) 2011-06-29 2018-01-30 엘지이노텍 주식회사 Light emitting device and light unit having thereof
US9374985B2 (en) 2011-12-14 2016-06-28 Once Innovations, Inc. Method of manufacturing of a light emitting system with adjustable watt equivalence
WO2013090505A1 (en) 2011-12-14 2013-06-20 Once Innovations Inc. Aquaculture lighting devices and methods
WO2013094755A1 (en) * 2011-12-22 2013-06-27 京セラ株式会社 Wiring board and electronic device
US20140001948A1 (en) * 2012-06-29 2014-01-02 Nitto Denko Corporation Reflecting layer-phosphor layer-covered led, producing method thereof, led device, and producing method thereof
US9554562B2 (en) 2014-08-07 2017-01-31 Once Innovations, Inc. Lighting system and control for experimenting in aquaculture
KR101724048B1 (en) * 2015-05-14 2017-04-06 (주)포인트엔지니어링 Light engine for luminous element
KR102423236B1 (en) * 2015-09-03 2022-07-20 쑤저우 레킨 세미컨덕터 컴퍼니 리미티드 light emitting device package
KR102522798B1 (en) * 2016-02-26 2023-04-18 쑤저우 레킨 세미컨덕터 컴퍼니 리미티드 Light emitting device package, light emitting module and display device having the same
US11044895B2 (en) * 2016-05-11 2021-06-29 Signify North America Corporation System and method for promoting survival rate in larvae
JP6680302B2 (en) * 2018-01-10 2020-04-15 日亜化学工業株式会社 Light emitting device
CN110081323B (en) * 2018-05-23 2021-08-31 浙江山蒲照明电器有限公司 LED filament and LED bulb
US11152553B2 (en) 2019-01-15 2021-10-19 Seoul Viosys Co., Ltd. Light emitting device package and display device having the same
EP3706262B1 (en) * 2019-02-15 2022-01-26 Nichia Corporation Method of manufacturing light emitting device, light emitting device, and base member

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH11112036A (en) 1997-09-30 1999-04-23 Sharp Corp Surface mounting semiconductor device
JP2004207363A (en) * 2002-12-24 2004-07-22 Kyocera Corp Package for housing light emitting element and light emitting device
JP4307090B2 (en) * 2003-01-27 2009-08-05 京セラ株式会社 Light emitting element storage package and light emitting device
JP2004363185A (en) 2003-06-02 2004-12-24 Stanley Electric Co Ltd Optical communication module

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HK1127161A1 (en) 2009-09-18

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